Radio frequency generation device and operation method thereof

Abstract

The invention provides a radio frequency generation device and an operation method thereof, and the device comprises a first radio frequency source which is connected to a first load of a cavity and generates a first radio frequency signal for the first load; the second radio frequency source is connected to a second load of the cavity and generates a second radio frequency signal to the second load; the frequency sweeping device is configured to adjust the frequency of the first radio frequency signal based on the plasma impedance around the first load; and the locking device is configured to control the electrical characteristics of the second radio frequency signal to be consistent with the electrical characteristics of the first radio frequency signal in the frequency sweeping process based on the adjusted electrical characteristics of the first radio frequency signal.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a radio frequency generating device and an operating method thereof. Background Art

[0002] Plasma processing equipment is used in a variety of industries to manufacture chips, including semiconductors, magnetic reading and writing, magnetic storage and micro-electromechanical systems. The use of radio frequency generators or radio frequency systems to excite plasma has been widely used in the field of plasma processing.

[0003] With the maturity of technology and the needs of the industry, plasma processing equipment has become more and more complex. For example, plasma etching equipment and plasma enhanced thin film deposition (PECVD) equipment both use a design scheme that uses multiple electrodes in the same vacuum chamber to achieve complex process effects and improve production efficiency. Specifically, in the process chamber of the inductively coupled plasma etching equipment, two upper and lower RF electrodes of the same frequency are used. The electrodes are powered by two sets of RF power supplies and impedance matchers to control the plasma density and the energy of ion bombardment of the wafer. In plasma enhanced chemical vapor deposition equipment, multiple electrodes are used in the same vacuum chamber, and multiple sets of RF power supplies and impedance matchers are used to power each electrode at the same time to complete the deposition of multiple wafers at the same time, thereby greatly improving production efficiency.

[0004] However, it is not easy to design multiple electrodes in a cavity. The problem caused by the use of multiple electrodes is the crosstalk caused by the different frequencies and phases of the RF signals of each electrode, which makes it impossible to correctly calculate the impedance value of the plasma, thereby affecting the frequency scanning function of the RF power supply.

[0005] Therefore, there is a need for a radio frequency generating device and an operating method thereof, which can accurately synchronize radio frequency signals on multiple electrodes in real time in a plasma processing chamber having multiple electrodes (or loads), so as to achieve synchronous frequency sweeping of the radio frequency device and give full play to the advantages of fast and high repeatability of frequency sweeping. The present application is suitable for solving this need. Summary of the invention

[0006] The present invention aims at the above-mentioned problem of phase synchronization of radio frequency signals on each electrode in a plasma processing chamber having multiple electrodes.

[0007] In a first aspect of the present application, according to an embodiment, a radio frequency generating device is provided, the device comprising: a first radio frequency source, connected to a first load of a cavity and generating a first radio frequency signal to the first load; a second radio frequency source, connected to a second load of the cavity and generating a second radio frequency signal to the second load; a frequency sweeping device, configured to adjust the frequency of the first radio frequency signal based on the plasma impedance around the first load; and a locking device, configured to control the electrical characteristics of the second radio frequency signal to be consistent with the electrical characteristics of the first radio frequency signal during the frequency sweeping process based on the electrical characteristics of the adjusted first radio frequency signal.

[0008] In a second aspect of the present application, according to an embodiment, a method for operating a radio frequency transmitting device is provided, comprising: providing a first radio frequency signal applied to a first load of a cavity; providing a second radio frequency signal applied to a second load of the cavity; adjusting the frequency of the first radio frequency signal based on the plasma impedance around the first load; generating a control signal based on the adjusted frequency and phase signal of the first radio frequency signal; and controlling the frequency and phase of the second radio frequency signal to be the same as the frequency and phase of the first radio frequency signal according to the control signal.

[0009] In a third aspect of the present application, according to an embodiment, an electronic device is provided, comprising: a memory; and a processor coupled to the memory, wherein instructions are stored in the memory, and when the instructions are executed by the processor, the electronic device performs the above-mentioned operating method.

[0010] The above is a fairly broad overview of the features and technical advantages of the present application, so that the following detailed description of the present application can be better understood. The additional features and advantages of the present application will be described below, and they form the subject matter of the claims of the present application. It will be appreciated by those skilled in the art that the disclosed concepts and specific embodiments can be easily utilized as the basis for modifying or designing other structures or processes for realizing the same purpose of the present application. It will also be appreciated by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the present application as set forth in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more fully understand the present application and its advantages, reference is now made to the following description in conjunction with the accompanying drawings, in which:

[0012] Figure 1 A schematic structural diagram of a radio frequency generating device connected to a plasma processing chamber provided in one embodiment of the present application is shown;

[0013] Figure 2 A schematic structural diagram of a radio frequency generating device connected to a plasma processing chamber provided in another embodiment of the present application is shown;

[0014] Figure 3 A schematic structural diagram of a radio frequency generating device connected to a plasma processing chamber provided in another embodiment of the present application is shown;

[0015] Figure 4 A schematic structural diagram of a locking device in a radio frequency generating device provided in an embodiment of the present application is shown;

[0016] Figure 5 A schematic diagram showing the position of sensors in the radio frequency generating device provided in each embodiment of the present application;

[0017] Figure 6 A flow chart of an operating method of a radio frequency generating device provided in an embodiment of the present application is shown.

[0018] Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated.The figures are drawn to clearly illustrate the relevant aspects of the various embodiments and are not necessarily drawn to scale. DETAILED DESCRIPTION

[0019] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in this application. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0020] The RF power supply frequency sweeping technology uses a fixed matching network to pre-adjust the real part of the load impedance, and then turns on the frequency sweeping function of the power supply. Through a specific frequency algorithm, the output frequency of the power supply is minimized. Compared with the traditional technology using an automatic matching network, the RF power supply frequency sweeping technology no longer uses a mechanical motor, but uses electronic adjustment, which has technical advantages such as fast speed and high repeatability. However, with the use of multiple electrodes in a vacuum chamber, and multiple sets of RF power supplies and impedance matchers to power the multiple electrodes at the same time, although the RF circuits are independent of each other, the plasma areas corresponding to the multiple electrodes are close to each other and cannot be absolutely isolated, which easily causes crosstalk, making it impossible to correctly calculate the impedance value of the plasma, so that multiple sets of RF power supplies cannot be normally swept synchronously.

[0021] According to one embodiment of the present application, Figure 1 FIG. 1 shows a block diagram of a radio frequency generating device provided by the present application. Figure 1As shown, the RF generating device and the plasma processing part together constitute a plasma processing device. Among them, the RF generating device includes a first RF source 101 and a first matcher 201. The first RF source 101 generates a RF signal to transmit the signal to the inlet end of the first matcher 201. The outlet end of the first matcher 201 is used to transmit the RF signal to the plasma processing part. The plasma processing part includes at least one cavity 50, which has a plurality of loads therein, and these loads are used to receive the RF signal generated by the RF source. In another embodiment, the plasma processing part may also include a RF transmission component, which is used to transmit RF power to the plasma in the cavity 50. The RF generating device can transmit the RF signal to the cavity 50 directly or indirectly via an intermediate component.

[0022] The first RF source 101 provides a first RF signal to the load in the chamber 50 to ignite plasma (or provoke plasma) in the chamber 50 and maintain the plasma for wafer processing or chamber cleaning, etc. In some embodiments, the first RF source 101 can provide RF power of different frequencies.

[0023] The first matcher 201 is arranged between the first RF source 10 and the cavity 50. The first matcher 201 is used to match the output impedance of the first RF source 101 with the input impedance of the cavity 50. The input impedance can change with the frequency of the voltage applied by the first RF source 101, the chamber pressure, the gas composition, and the target material or the substrate material. The first matcher 201 includes electrical components such as variable capacitors and variable inductors, which are used to dynamically match the output impedance of the first RF source 201 with the input impedance of the cavity 50. Most RF sources have an output impedance of 50 ohms. The first matcher 201 can adjust the mismatch between the input impedance and the output impedance (50 ohms) of the RF source. In addition, the first matcher 201 may have one or more fixed impedances. The multiple fixed impedances correspond to the operation menus of multiple plasma processing equipment respectively.

[0024] The RF generating device also includes a second RF source 102 and a second matcher 202. The second RF source 102 is connected to the second matcher 202, and the second matcher 202 is connected to the load in the cavity 50. The second RF source 102 is used to generate a second RF signal to the load. The functions of the second RF source 102 and the second matcher 202 are the same as those of the first RF source 101 and the first matcher 201, and are not described in detail here.

[0025] In this embodiment, the RF generating device also includes a frequency sweeping device 60. The frequency sweeping device 60 is connected to the first RF source 101. The frequency sweeping device 60 adjusts the frequency of the first RF signal based on the plasma impedance around the first load in the cavity 50. Specifically, the first matcher 201 usually pre-adjusts the real part of the plasma impedance in the cavity, and the frequency of the RF signal generated by the first RF source 101 can adjust the imaginary part of the plasma impedance, thereby determining the plasma impedance that minimizes the reflection coefficient. Therefore, by obtaining the plasma impedance value, the frequency sweeping device 60 can adjust the frequency of the RF signal of the first RF source 101 to obtain the optimal frequency. For example, the frequency sweeping device 60 can adjust the frequency to move in the direction that the algorithm considers to be correct based on the data collected including the impedance value, etc. according to the built-in frequency algorithm. Usually, within the window time of a sampling, the frequency movement amplitude is limited, so it is necessary to move the frequency to the vicinity of the optimal value within one cycle.

[0026] The locking device 40 is connected to the first RF source 101 and the second video source 102. Based on the electrical characteristics of the first RF signal output by the first RF source 101 after adjustment during the frequency sweeping process, the locking device 40 controls the electrical characteristics of the second RF signal output by the second RF source 102 to be the same as the electrical characteristics of the first RF signal. The electrical characteristics may be one or more of the following: frequency, phase or power of the RF signal. In one embodiment, the locking device is used to keep the frequency and phase of the second RF signal consistent with the frequency and phase of the first RF signal during the entire frequency sweeping process.

[0027] In some embodiments, the RF generating device further includes a first sensor 301. The first sensor 301 is disposed between the first matcher 201 and the cavity 50, and is used to detect an electrical signal before the first RF signal is input into the cavity, such as an RF current or RF voltage signal. A feedback signal is generated based on the phase and frequency information in the current or voltage signal, and the feedback signal is fed back to the locking device 40. The specific positions of these sensors will be described in detail below. Figure 5 Detailed description: The locking device 40 receives the feedback signal and generates a control signal based on the feedback signal to control the phase or frequency of the second RF signal generated by the second RF source 102. The feedback signal indicates the frequency or phase information in the RF signal.

[0028] The RF generating device directly and in real time detects the frequency or phase information of the RF signal at the cavity, and adjusts and controls the frequency and phase of the output signal of each RF source, so that each RF source can achieve real-time synchronization of frequency and phase during the entire frequency sweeping process. The RF sources in the RF generating device of the present application can perform synchronous frequency sweeping, giving full play to the advantages of fast and high repeatability of frequency sweeping, and avoiding the problem of crosstalk caused by the inconsistency of phase and frequency between the RF sources, which makes it impossible to perform normal impedance matching.

[0029] The plasma processing part includes a chamber 50, which is a plasma processing chamber and can be used for various semiconductor processing steps, such as etching, deposition, cleaning, etc. The chamber 50 has multiple loads. In this embodiment, a first load and a second load are in the chamber 50. The first load is connected to the first RF source 101 by a cable to receive a RF signal, and the second load is connected to the second RF source 102 by a cable to receive a RF signal. The load can be a capacitive load, such as an electrode plate. The load can also be an inductive load, such as a coil. Therefore, the chamber 50 can be any one of the following chambers: a capacitively coupled plasma (CCP) chamber, an inductively coupled plasma (ICP) chamber, a transformer coupled plasma (TCP) chamber, a through silicon via (TSV) chamber, and a remote plasma source (RPS) chamber.

[0030] Figure 2 FIG. 2 shows a schematic structural diagram of a radio frequency generating device provided by another embodiment of the present application. Figure 2 As shown, the RF generating device includes first and second RF sources 101 and 102, first and second matchers 201 and 202, a frequency sweeping device 60, and first and second locking devices 401 and 402. The RF generating device also includes a first sensor 301 disposed between the first matcher 201 and the cavity 50.

[0031] Specifically, the first RF source 101, the first matcher 201, the first sensor 301 and the first load of the cavity 50 are connected in cascade. The first load of the cavity 50 is used to receive the first RF signal generated by the first RF source 101. The first sensor 301 is used to detect the electrical signal of the first RF signal at the first load, and generate a feedback signal according to the phase or frequency information in the signal to transmit to the first locking device 40.

[0032] The second RF source 102, the second matcher 202 and the second load of the cavity 50 are connected in cascade. The second load of the cavity 50 is used to receive the second RF signal generated by the second RF source 102. The frequency sweeping device 60 adjusts the frequency of the first RF signal based on the plasma impedance around the first load in the cavity 50.

[0033] The first locking device 401 is connected to the first RF source 101. During the entire frequency sweeping process, the first locking device 401 is used to receive a feedback signal (e.g., the frequency and phase signal of the adjusted first RF signal) from the first sensor 301 to generate a frequency and phase control signal, and output the control signal to the second locking device 402. The second locking device 402 is connected to the second RF source 102. The second locking device 402 receives a control signal from the first locking device 401. According to the control signal, the second locking device 402 controls the second RF signal generated by the second RF source 102, so that during the frequency sweeping process, the frequency and phase of the second RF signal are consistent with the frequency and phase of the first RF signal, that is, the second RF signal follows the first RF signal. In this way, the frequency change trajectory of the second RF source is similar to the frequency change trajectory of the first RF source, avoiding crosstalk caused by different frequencies and phase angles between the loads (e.g., electrodes) in the cavity, thereby solving the problem that the two RF sources cannot perform simultaneous frequency sweeping.

[0034] Figure 3 FIG. 2 shows a schematic structural diagram of a radio frequency generating device provided by another embodiment of the present application. Figure 3 As shown, the RF generating device includes a first RF source 101, a second RF source 102, and a third RF source 103, a first matcher 201, a second matcher 202, and a third matcher 203, a frequency sweeping device 60, and a first locking device 401, a second locking device 402, and a third locking device 403. The RF generating device also includes a first sensor 301 disposed between the first matcher 201 and the cavity 50. Figure 2 The difference between the illustrated embodiment is that the radio frequency generating device further comprises a third radio frequency source 103 , a third matcher 203 and a third locking device 403 .

[0035] Specifically, the third RF source 103, the third matcher 203 and the third load of the cavity 50 are connected in cascade. The third load of the cavity 50 is used to receive the third RF signal generated by the third RF source 103. During the entire frequency sweeping process, the first locking device 401 is used to receive the feedback signal (for example, the frequency and phase signal of the adjusted first RF signal) from the first sensor 301 to generate a control signal of the frequency and phase, and output the control signal to the second locking device 402 and the third locking device 403. The second locking device 402 and the third locking device 403 receive the control signal from the first locking device 401 respectively. According to the control signal, the second locking device 402 controls the second RF signal generated by the second RF source 102, so that during the frequency sweeping process, the frequency and phase of the second RF signal are consistent with the frequency and phase of the first RF signal, that is, the second RF signal follows the first RF signal. The third locking device 403 controls the third RF signal generated by the third RF source 103, so that during the frequency sweeping process, the frequency and phase of the third RF signal are consistent with the frequency and phase of the first RF signal. In this way, the frequency change trajectories of the second RF source and the third RF source can be similar to the frequency change trajectory of the first RF source, thereby realizing the operation of simultaneously sweeping the frequencies of multiple RF sources.

[0036] It should be noted that Figures 1 to 3 The components or modules shown in the figure are divided based on functions, and the RF source, matcher, sensor, locking device, frequency sweeping device, and the components or modules in the subsequent embodiments of the present application cannot be understood as separate physical hardware. In actual implementation, these components can be further combined or separated. For example, the functions of the locking device 40 can be distributed in hardware, software, and firmware components. One or more sensors can also be implemented by combining the components in the matcher, RF source, or cavity.

[0037] In other embodiments, the chamber 50 may have more electrode plates or coils, such as six, eight or more loads. Figure 3 The RF generating device can be expanded according to the needs in the embodiment shown, that is, more RF sources are connected to multiple loads in the cavity to achieve synchronization of RF signals of multiple RF sources.

[0038] Figure 4 FIG. 2 shows a schematic diagram of a first locking device in a radio frequency generating device provided in an embodiment of the present application. Figure 4 As shown, the first locking device 40 includes an analog-to-digital conversion unit 406, a controller 404, and a digital-to-analog conversion unit 402. The analog-to-digital conversion unit 406 receives a feedback signal. The feedback signal may be a frequency signal and / or a phase signal received from a sensor, such as Figure 1 or Figure 2The first sensor 301 in the illustrated embodiment generates a feedback signal. The feedback signal represents the frequency or phase information of the RF signal at the cavity load. These signals are input to the controller 404 after analog-to-digital conversion.

[0039] The controller 404 can be a central processing unit CPU, a microcontroller unit MCU, an off-the-shelf programmable gate array FPGA, a digital signal processor DSP, a direct digital synthesizer DDS, or one of other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The controller 404 can output a digitized arbitrary waveform signal, and realize high-speed signal input and output processing, and quickly and accurately calculate and control the input and output signals through the control algorithm. The controller 404 outputs the processed signal to the digital-to-analog conversion unit 408, so that the digital-to-analog conversion unit 408 outputs a control signal to the second locking device 402 and the third locking device 403. These control signals make the frequency and phase of the radio frequency signals generated by the first to third radio frequency sources the same.

[0040] The second locking device 402 (or the third locking device 403) receives the control signal from the first locking device 401, converts it into a digital signal through the built-in analog-to-digital converter, and then controls the second RF source 102 (or the third RF source 103) to generate a RF signal with the same frequency and phase as the first RF signal.

[0041] For fixed load impedance, the change trajectory of the RF source frequency has little effect on impedance matching. For dynamic load impedance, such as plasma load, the frequency sweep trajectory (frequency change trajectory) of the RF source will be relatively important. The ignition frequency and the frequency after stabilization of the plasma are very dependent on the change trajectory of the RF source frequency. Therefore, the frequency motion trajectory of the slave power source (second RF source, third RF source) should fit the frequency change trajectory of the main power source (first RF source) as much as possible. In view of this, the ratio of the time to adjust the frequency of the first RF signal during frequency sweep to the time required to control the electrical characteristics of the second RF signal is greater than or equal to 10:1. In other words, the frequency change time of the first RF source during frequency sweep and the time required for the slave power source (second RF source, third RF source) to follow and lock the frequency and phase of the first RF source can be set to 10:1 or higher.

[0042] Figure 5 The schematic diagram of the position of the sensor in the radio frequency generating device provided in each embodiment of the present application is shown. Figure 5 As shown, the matcher 20 represents Figures 1 to 3 The first matcher 201 in the sensor 30 represents Figures 1 to 3 In one embodiment, the first sensor 301 is Figure 5As shown in the figure above, the sensor 30 can be arranged at the output end of the matcher 20, or integrated into the matcher 20. In another embodiment, as Figure 4 As shown in the lower figure of FIG. 5 , the sensor 30 is arranged on the load side close to the cavity 50 and outside the cavity. In another embodiment, the sensor 30 may be arranged between the RF source and the matcher 20 .

[0043] In some embodiments, the sensor is a voltage-current (VI) coupled sensor. In other embodiments, the sensor is a current loop sensor.

[0044] It should be noted that Figure 5 The sensors shown can be arbitrarily combined or replaced with sensors in other embodiments of the present application.

[0045] Various embodiments of the plasma processing chamber connected to the radio frequency generating device provided by the present application are given below. It should be noted that these embodiments of the plasma processing chamber can be combined with or replaced with the above-mentioned embodiments of the radio frequency generating device.

[0046] In one embodiment, the plasma processing chamber 50 includes a first upper electrode and a first lower electrode, and a first plasma processing zone is between the first upper electrode and the first lower electrode. The chamber 50 also includes a second upper electrode and a second lower electrode, and a second plasma processing zone is between the second upper electrode and the second lower electrode. The first upper electrode serves as a first load of the chamber to receive Figure 1 The second upper electrode serves as a second load of the cavity to receive the first RF signal generated by the first RF source 101 in the cavity. Figure 1 or Figure 2 The second RF signal is generated by the second RF source 102 in.

[0047] In one embodiment, the plasma processing chamber 50 includes a first upper electrode and a first lower electrode, and a first plasma processing zone is between the first upper electrode and the first lower electrode. The chamber 50 also includes a second upper electrode and a second lower electrode, and a second plasma processing zone is between the second upper electrode and the second lower electrode. The chamber 50 also includes a third upper electrode and a third lower electrode, and a third plasma processing zone is between the third upper electrode and the third lower electrode. The first upper electrode serves as a first load of the chamber to receive Figure 3 The second upper electrode serves as a second load of the cavity to receive the first RF signal generated by the first RF source 101 in the cavity. Figure 3 The third upper electrode serves as a third load of the cavity to receive the second RF signal generated by the second RF source 102 in the cavity. Figure 3 The third RF signal is generated by the third RF source 103 in.

[0048] In one embodiment, the plasma processing chamber 50 includes a first coil and a first lower electrode, and a first plasma processing zone is between the first coil and the first lower electrode. The chamber 50 also includes a second coil and a second lower electrode, and a second plasma processing zone is between the second coil and the second lower electrode. The first coil serves as a first load of the chamber to receive Figure 1 or Figure 2 The first RF signal generated by the first RF source 101 in the cavity. The second coil serves as a second load of the cavity to receive Figure 1 or Figure 2 The second RF signal is generated by the second RF source 102 in.

[0049] In one embodiment, the plasma processing chamber 50 includes a first coil and a first lower electrode, and a first plasma processing zone is between the first coil and the first lower electrode. The chamber 50 also includes a second coil and a second lower electrode, and a second plasma processing zone is between the second coil and the second lower electrode. The chamber 50 also includes a third coil and a third lower electrode, and a third plasma processing zone is between the third coil and the third lower electrode. The first coil serves as the first load of the chamber to receive Figure 3 The first RF signal generated by the first RF source 101 in the cavity. The second coil serves as a second load of the cavity to receive Figure 3 The third coil serves as a third load of the cavity to receive the second RF signal generated by the second RF source 102 in the cavity. Figure 3 The third RF signal is generated by the third RF source 103 in.

[0050] Figure 6 A flow chart of an operating method of a radio frequency generating device provided in an embodiment of the present application is shown. Figure 6 The flowchart shown is only an example, which should not unduly limit the scope of the claims. Those skilled in the art will recognize many variations, substitutions, and modifications. For example, Figure 6 The various steps shown in the drawings may be added, removed, substituted, rearranged, and repeated.

[0051] Return to reference Figure 2 The RF generating device shown in the figure comprises first and second RF sources, first and second matchers, a first sensor, a frequency sweeping device and first and second locking devices. The first RF source and the second RF source are coupled to a cavity having a plurality of loads. In one embodiment, the operating method of the RF generating device comprises the following steps:

[0052] In step 602, a first radio frequency source provides a first radio frequency signal applied to a first load of a cavity.

[0053] In step 604, a second radio frequency source is used to provide a second radio frequency signal applied to a second load of the cavity.

[0054] In step 606, the frequency of the first RF signal is adjusted based on the plasma impedance around the first load by a frequency sweeping device.

[0055] At step 608, a control signal is generated based on the adjusted frequency and phase signal of the first radio frequency signal.

[0056] In step 610, according to the control signal, the frequency and phase of the second radio frequency signal are controlled to be the same as the frequency and phase of the first radio frequency signal.

[0057] Return to reference Figure 3 The RF generating device shown comprises first to third RF sources, first to third matchers, a first sensor, a frequency sweeping device and first and second locking devices. The first RF source, the second RF source and the third RF source are coupled to a cavity having a plurality of loads.

[0058] In one embodiment, the method also includes providing a third RF signal applied to a third load of the cavity through a third RF source; generating a control signal based on the adjusted frequency and phase signals of the first RF signal; and controlling, according to the control signal, so that the frequency and phase of the second RF signal and the frequency and phase of the third RF signal are respectively the same as the frequency and phase of the first RF signal.

[0059] In one embodiment, the present application provides an electronic device. The electronic device of this embodiment includes: a processor, a memory, and computer instructions stored in the memory and executable on the processor, such as operating instructions of a radio frequency generating device. When the processor executes the instructions, the steps in the above-mentioned operating method embodiments of each radio frequency generating device are implemented, such as Figure 6 Steps 602 to 610 are shown.

[0060] Although the embodiments of the present application and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application as defined by the appended claims.

[0061] In addition, the scope of the present application is not limited to the specific embodiments of the processes, machines, manufactures, material compositions, modes, methods, and steps described in this specification. Those skilled in the art will readily understand from the disclosure of the present application that, according to the present application, currently existing or later to be developed processes, machines, manufactures, material compositions, modes, methods, or steps that perform substantially the same functions or achieve substantially the same results as the corresponding embodiments described herein may be utilized. Therefore, it is intended that the appended claims include such processes, machines, manufactures, material compositions, modes, methods, or steps within their scope.

Claims

1. A radio frequency generating device, comprising: a first radio frequency source connected to a first load of the cavity and generating a first radio frequency signal to the first load; a second radio frequency source connected to a second load of the cavity and generating a second radio frequency signal to the second load; a frequency sweeping device configured to adjust the frequency of the first radio frequency signal based on the plasma impedance around the first load; as well as The locking device is configured to control the electrical characteristics of the second radio frequency signal to be consistent with the electrical characteristics of the first radio frequency signal during the frequency sweep process based on the adjusted electrical characteristics of the first radio frequency signal.

2. The device according to claim 1, characterized in that The electrical characteristics include one or more of the following: frequency, phase, and power.

3. The device according to claim 1, characterized in that The locking device comprises: A first locking device, configured to receive the frequency and phase signals of the adjusted first radio frequency signal to generate a frequency and phase control signal, and output the control signal; and The second locking device is used to receive the control signal and control the second radio frequency signal of the second radio frequency source according to the control signal.

4. The device according to claim 1, characterized in that The system further comprises a third radio frequency source connected to a third load of the cavity and generating a third radio frequency signal to the third load, and The locking device is also configured to control the electrical characteristics of the second RF signal and the third RF signal to be consistent with the electrical characteristics of the first RF signal during the frequency sweep process based on the adjusted electrical characteristics of the first RF signal.

5. The device according to claim 4, characterized in that The locking device comprises: A first locking device, used for receiving the frequency and phase signals of the adjusted first radio frequency signal to generate a frequency and phase control signal, and outputting the control signal; a second locking device, configured to receive the control signal and control a second radio frequency signal of the second radio frequency source according to the control signal, and The third locking device is used to receive the control signal and control the third radio frequency signal of the third radio frequency source according to the control signal.

6. The device according to claim 1, characterized in that Also includes: The sensor is used to detect the frequency and phase signal of the first radio frequency signal, and output the frequency and phase signal to the locking device.

7. The device according to claim 1, characterized in that The chamber includes two plasma processing areas, the first load is located in the first plasma processing area, and the second load is located in the second plasma processing area.

8. The device according to claim 1, characterized in that During frequency sweeping, a ratio of a time for adjusting the frequency of the first radio frequency signal to a time required for controlling an electrical characteristic of the second radio frequency signal is greater than or equal to 10:

1.

9. A method for operating a radio frequency transmitting device, comprising: providing a first radio frequency signal applied to a first load of the cavity; providing a second radio frequency signal applied to a second load of the cavity; adjusting a frequency of the first radio frequency signal based on a plasma impedance surrounding the first load; generating a control signal based on the adjusted frequency and phase signal of the first radio frequency signal; as well as According to the control signal, the frequency and phase of the second radio frequency signal are controlled to be the same as the frequency and phase of the first radio frequency signal.

10. The operating method according to claim 9, further comprising: providing a third radio frequency signal applied to a third load of the cavity; generating a control signal based on the adjusted frequency and phase signal of the first radio frequency signal; And according to the control signal, control is performed so that the frequency and phase of the second radio frequency signal and the frequency and phase of the third radio frequency signal are respectively the same as the frequency and phase of the first radio frequency signal.

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