Substrate processing method and substrate processing apparatus

Abstract

The invention relates to a substrate processing method and a substrate processing apparatus. The substrate processing method includes: a first chemical solution step (step S2) of supplying a first chemical solution to a substrate (W); a rinsing step (step S3) in which a rinsing liquid is supplied to the substrate (W); a removal step (step S4) of discharging the rinsing liquid from the recess (320) by rotating the substrate (W) while the supply of the rinsing liquid is stopped; and a second chemical solution step (step S5) in which a second chemical solution is supplied to the substrate (W) from which the rinsing solution has been removed. In a first chemical solution step (step S2), a first chemical solution discharged from a rotating substrate (W) is blocked by a first guard (61a). In the rinsing step (step S3), the first guard (61a) is switched to the second guard (61b). In the removal step (step S4) and the second chemical solution step (step S5), the first rinsing solution and the second chemical solution discharged from the rotating substrate (W) are blocked by a second guard (61b).

Description

Technical Field

[0001] The invention relates to a substrate processing method and a substrate processing device. Background Art

[0002] Patent document 1 discloses a substrate processing method and a substrate processing device for processing a substrate having a pattern including a concave portion. Specifically, Patent document 1 discloses a substrate processing method and a single-chip device performed using a single-chip device. Patent document 1 discloses that after a cleaning process, a removal process is performed to remove a processing liquid that has entered the concave portion from the substrate. In addition, Patent document 1 discloses that an etching process is performed after the removal process.

[0003] Specifically, Patent Document 1 discloses that in a single-chip device, the processing liquid is removed from the substrate by exposing the substrate to IPA (isopropyl alcohol) vapor and drying the substrate. In addition, Patent Document 1 discloses that during the removal process, the atmosphere around the substrate is made a nitrogen atmosphere. According to the technology disclosed in Patent Document 1, by making the atmosphere around the substrate a nitrogen atmosphere, it is possible to avoid the formation of a natural oxide film on the surface of the substrate.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2020-35777 Summary of the invention

[0007] Problems to be solved by the invention

[0008] However, according to the substrate processing method and substrate processing apparatus of Patent Document 1, in order to remove the processing liquid that has entered the concave portion from the substrate, it is necessary to supply the IPA vapor and the nitrogen gas. Therefore, the configuration becomes complicated. Therefore, there is room for further improvement in the technology of removing the processing liquid that has entered the concave portion from the substrate.

[0009] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of removing the rinse liquid that has entered the recessed portion from the substrate with a simpler structure.

[0010] Means for solving problems

[0011] According to one aspect of the present invention, a substrate processing method is a method for processing a substrate having a pattern including a concave portion. The method includes: a first liquid step of supplying a first liquid to the substrate; a rinsing step of supplying a first rinse liquid to the substrate; a removal step of rotating the substrate while stopping the supply of the first rinse liquid, discharging the first rinse liquid from the concave portion, and removing the first rinse liquid from the substrate; and a second liquid step of supplying a second liquid to the substrate from which the first rinse liquid has been removed. In the first liquid step, the first liquid is supplied to the rotating substrate, and the first liquid discharged from the substrate is blocked by a first guard surrounding the substrate. In the rinsing step, the guard surrounding the substrate is switched from the first guard to the second guard. In the removal step, the first rinse liquid discharged from the rotating substrate is blocked by the second guard. In the second chemical solution step, the second chemical solution is supplied to the rotating substrate, and the second chemical solution discharged from the rotating substrate is blocked by the second guard.

[0012] In one embodiment, the rinsing step includes: a step of supplying the first rinsing liquid to the rotating substrate; and a spinning immersion step of maintaining a liquid film of the first rinsing liquid on the substrate. In the spinning immersion step, the guard surrounding the substrate is switched from the first guard to the second guard.

[0013] In one embodiment, in the removing step and the second chemical solution step, the first rinse solution and the second chemical solution blocked by the second guard are recovered.

[0014] In one embodiment, in the removing step, the substrate is rotated at a rotation speed equal to a rotation speed of the substrate at the start of the second chemical solution step.

[0015] In one embodiment, the rinsing step is a first rinsing step. The substrate processing method further includes: a second rinsing step of supplying a second rinsing liquid to the rotating substrate to wash away the second chemical solution from the substrate; and a drying step of increasing the rotation speed of the substrate to dry the substrate. In the removing step, the substrate is rotated at a rotation speed lower than the rotation speed at which the substrate is rotated in the drying step.

[0016] In one embodiment, the rinsing step is a first rinsing step. The substrate processing method further includes: a second rinsing step of supplying a second rinsing liquid to the rotating substrate to wash away the second chemical solution from the substrate; and a drying step of increasing the rotation speed of the substrate to dry the substrate. The duration of the removal step is shorter than the duration of the drying step.

[0017] In one embodiment, the pattern includes a multi-layer stacked structure in which polysilicon layers and silicon oxide layers are alternately stacked.

[0018] In one embodiment, the multi-layered stacked structure includes stacked structures having 80 layers or more.

[0019] In one embodiment, the recessed portion is recessed in a stacking direction in which the polysilicon layer and the silicon oxide layer are alternately stacked. The second chemical solution step includes a step of etching the polysilicon layer to form a concave portion on an inner side surface of the recessed portion.

[0020] In one embodiment, the first chemical solution includes an acidic chemical solution, and the second chemical solution includes an alkaline chemical solution.

[0021] According to another aspect of the present invention, a substrate processing device processes a substrate having a pattern including a concave portion. The substrate processing device comprises: a substrate holding portion, a substrate rotating portion, a processing liquid supply portion, a plurality of protective members, a lifting portion, and a control portion. The substrate holding portion holds the substrate horizontally. The substrate rotating portion rotates the substrate holding portion around a central axis extending in the up-down direction, and rotates the substrate and the substrate holding portion integrally. The processing liquid supply portion supplies processing liquid to the substrate. The plurality of protective members surround the substrate and block the processing liquid discharged from the substrate. The lifting portion lifts and lowers the plurality of protective members individually and switches the protective members surrounding the substrate among the plurality of protective members. The control portion controls the substrate rotating portion, the processing liquid supply portion, and the lifting portion. The processing liquid includes a first chemical liquid, a first rinse liquid, and a second chemical liquid. The plurality of protective members include a first protective member and a second protective member. The control unit performs the following processes: controlling the processing liquid supply unit to supply the first liquid treatment of the first liquid to the substrate; controlling the processing liquid supply unit to supply the first rinse liquid to the substrate for rinsing; controlling the substrate rotating unit to rotate the substrate while controlling the processing liquid supply unit to stop supplying the first rinse liquid, discharging the first rinse liquid from the recess, and removing the first rinse liquid from the substrate; controlling the processing liquid supply unit to supply the second liquid treatment of the second liquid to the substrate from which the first rinse liquid has been removed; and controlling the substrate rotating unit to rotate the substrate while controlling the processing liquid supply unit to stop supplying the first rinse liquid. The substrate rotating portion is used to rotate the substrate during the first liquid treatment, the rinsing treatment and the second liquid treatment; the lifting portion is controlled to use the first protective member to block the first liquid discharged from the rotating substrate during the first liquid treatment; and during the rinsing treatment, the lifting portion is controlled to switch the protective member surrounding the substrate from the first protective member to the second protective member, and during the removal treatment and the second liquid treatment, the first rinsing liquid and the second liquid discharged from the rotating substrate are blocked by the second protective member.

[0022] In one embodiment, the rinsing process includes: a process of controlling the processing liquid supply unit to supply the first rinsing liquid to the rotating substrate while controlling the substrate rotating unit to rotate the substrate; and a spinning immersion process of maintaining a liquid film of the first rinsing liquid on the substrate. During the spinning immersion process, the control unit controls the lifting unit to switch the guard surrounding the substrate from the first guard to the second guard.

[0023] In one embodiment, the substrate processing apparatus further includes a recovery unit configured to recover the first rinse liquid and the second chemical solution blocked by the second guard.

[0024] In one embodiment, the control unit controls the substrate rotating unit to rotate the substrate at a rotation speed equal to a rotation speed of the substrate at the start of the second chemical liquid treatment during the removal process.

[0025] In one embodiment, the rinsing process is a first rinsing process. The control unit further performs the following processes: a second rinsing process in which the substrate rotating unit is controlled to rotate the substrate while the processing liquid supply unit is controlled to supply a second rinsing liquid to the substrate and wash the second liquid from the substrate; and a drying process in which the substrate is dried by increasing the rotation speed of the substrate by controlling the substrate rotating unit. The control unit controls the substrate rotating unit to rotate the substrate at a rotation speed lower than the rotation speed of the substrate during the drying process during the removal process.

[0026] In one embodiment, the rinsing process is a first rinsing process. The control unit further performs the following processes: a second rinsing process in which the substrate rotating unit is controlled to rotate the substrate while the processing liquid supply unit is controlled to supply a second rinsing liquid to the substrate and wash the second chemical liquid from the substrate; and a drying process in which the substrate is dried by increasing the rotation speed of the substrate by controlling the substrate rotating unit. The control unit performs the removal process in a shorter time than the drying process.

[0027] In one embodiment, the pattern includes a multi-layer stacked structure in which polysilicon layers and silicon oxide layers are alternately stacked.

[0028] In one embodiment, the multi-layered stacked structure includes stacked structures having 80 layers or more.

[0029] In one embodiment, the recess is recessed in a stacking direction in which the polysilicon layer and the silicon oxide layer are alternately stacked. The control unit etches the polysilicon layer through the second chemical solution treatment to form a concave portion on an inner side surface of the recess.

[0030] In one embodiment, the first chemical solution includes an acidic chemical solution, and the second chemical solution includes an alkaline chemical solution.

[0031] According to the substrate processing method and substrate processing apparatus of the present invention, the rinse liquid that has entered the recessed portion can be removed from the substrate with a simpler configuration. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention.

[0033] Figure 2It is a cross-sectional view schematically showing the structure of a substrate processing unit included in the substrate processing apparatus according to the embodiment of the present invention.

[0034] Figure 3 It is a diagram showing a movement trajectory of a second discharge nozzle included in the substrate processing apparatus according to the embodiment of the present invention.

[0035] Figure 4 (a) is an enlarged top view schematically showing an example of a substrate processed by a substrate processing apparatus according to an embodiment of the present invention; (b) is an enlarged cross-sectional view schematically showing an example of a substrate processed by a substrate processing apparatus according to an embodiment of the present invention.

[0036] Figure 5 (a) is an enlarged cross-sectional view schematically showing a portion of the substrate before the first chemical solution is supplied; (b) is an enlarged cross-sectional view schematically showing a portion of the substrate before the second chemical solution is supplied; and (c) is an enlarged cross-sectional view schematically showing a portion of the substrate after the substrate is processed.

[0037] Figure 6 This is a flowchart showing the flow of a substrate processing method according to an embodiment of the present invention.

[0038] Figure 7 (a) is a diagram schematically showing a substrate processing portion during a first chemical solution treatment; (b) is an enlarged cross-sectional diagram schematically showing a portion of a substrate during a first chemical solution treatment.

[0039] Figure 8 (a) is a diagram schematically showing a first state of a substrate processing unit during a first rinsing treatment; (b) is an enlarged cross-sectional diagram schematically showing a portion of a substrate during a first rinsing treatment.

[0040] Fig. 9 (a) is a diagram schematically showing a second state of the substrate processing unit during the first rinsing process; (b) is a diagram schematically showing a third state of the substrate processing unit during the first rinsing process.

[0041] Fig.10 It is a diagram schematically showing a substrate processing section during a removal process.

[0042] Fig.11 (a) is a diagram schematically showing a substrate processing portion at the end of the removal process; (b) is an enlarged cross-sectional diagram schematically showing a portion of the substrate at the end of the removal process.

[0043] Fig.12 (a) is a diagram schematically showing a substrate processing section at the start of the second chemical solution processing; (b) is an enlarged cross-sectional diagram schematically showing a portion of the substrate during the second chemical solution processing.

[0044] Fig.13 It is a diagram schematically showing a substrate processing unit during scanning processing.

[0045] Fig.14 It is a diagram schematically showing the substrate processing section during the second rinsing process.

[0046] Fig.15 It is a diagram schematically showing a substrate processing section during a drying process.

[0047] Description of Reference Numerals

[0048] 2: Substrate holding part

[0049] 3: Substrate rotation unit

[0050] 4: Treatment liquid supply unit

[0051] 6: Protective parts

[0052] 6a: First guard part

[0053] 6b: Second guard part

[0054] 6c: The third guard part

[0055] 7: Lifting part

[0056] 9: Recycling Department

[0057] 10: Control device

[0058] 11: Control Department

[0059] 41: First liquid medicine supply unit

[0060] 42: Second liquid medicine supply unit

[0061] 43: Rinse liquid supply unit

[0062] 61a: 1st protection part

[0063] 61b: Second protective part

[0064] 61c: 3rd protection piece

[0065] 71: 1st elevator

[0066] 72: Second Elevator

[0067] 73: Elevator Section 3

[0068] 100: substrate processing device

[0069] 320: concave part

[0070] 330:Laminated structure

[0071] 331: Silicon oxide layer

[0072] 332: Polysilicon layer

[0073] 333: Kubo

[0074] D1: Up and down direction

[0075] D2: thickness direction

[0076] D3: Face direction

[0077] PT: Pattern

[0078] S2: Step (1st chemical solution process)

[0079] S3: Step (1st rinsing step)

[0080] S31: Steps

[0081] S32: Step (spinning and immersion process)

[0082] S4: Step (removal process)

[0083] S5: Step (Second Chemical Solution Process)

[0084] S6: Step (Second Rinsing Process)

[0085] S7: Step (Drying Process)

[0086] W: substrate DETAILED DESCRIPTION

[0087] Hereinafter, referring to the accompanying drawings ( Figure 1 to Figure 15 ) describes the embodiments of the substrate processing method and substrate processing device of the present invention. However, the present invention is not limited to the following embodiments, and can be implemented in various ways without departing from the scope of the present invention. In addition, for places where the description is repeated, the description is sometimes appropriately omitted. In addition, in the drawings, the same reference numerals are marked for the same or corresponding parts, and the description is not repeated.

[0088] In the substrate processing method and substrate processing device of the present invention, the "substrate" that is the object of substrate processing can be various substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, and substrates for optical and magnetic disks. Hereinafter, the embodiment of the present invention is mainly described by taking a disc-shaped semiconductor wafer as the object of substrate processing as an example, but the substrate processing method and substrate processing device of the present invention can also be applied to various substrates other than the above-mentioned semiconductor wafers. In addition, the shape of the substrate is not limited to a disc shape, and the substrate processing method and substrate processing device of the present invention can be applied to substrates of various shapes.

[0089] Figure 1 Schematic diagram of a substrate processing apparatus 100 according to this embodiment. Figure 1 1 is a schematic top view of the substrate processing apparatus 100. The substrate processing apparatus 100 processes the substrate W using a plurality of processing liquids. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus, and processes one substrate W at a time.

[0090] like Figure 1 As shown, the substrate processing apparatus 100 includes a plurality of substrate processing units 200 , a fluid chamber 101 , a plurality of fluid tanks 102 , a plurality of load ports LP, an indexer robot IR, a central robot CR, and a control device 10 .

[0091] Each of the load ports LP stacks and receives a plurality of substrates W. Each of the substrates W has a pattern PT including a plurality of recesses 320 (see Figure 4 (a) and Figure 4 (b) The substrate W (semiconductor wafer) includes, for example, a substrate used for manufacturing a semiconductor product having a three-dimensional structure such as a three-dimensional flash memory (for example, a three-dimensional NAND flash memory).

[0092] The indexer robot IR transfers the substrate W between the load port LP and the central robot CR. The central robot CR transfers the substrate W between the indexer robot IR and the substrate processing unit 200. It should be noted that a stage (path) for temporarily placing the substrate W may be provided between the indexer robot IR and the central robot CR, and a device may be configured to indirectly transfer the substrate W between the indexer robot IR and the central robot CR via the stage.

[0093] The plurality of substrate processing units 200 form a plurality of towers TW (in Figure 1 The towers TW are arranged so as to surround the central robot CR in a plan view. Each tower TW includes a plurality of substrate processing units 200 ( Figure 1 There are three substrate processing units 200).

[0094] The fluid chamber 101 contains a processing liquid. The fluid boxes 102 each correspond to one of the plurality of towers TW. The processing liquid in the fluid chamber 101 is supplied to all substrate processing units 200 included in the corresponding tower TW via any of the fluid boxes 102 .

[0095] Each of the substrate processing units 200 processes the substrate W using a plurality of processing liquids. That is, each of the substrate processing units 200 performs substrate processing on the substrate W. Specifically, each substrate processing unit 200 sequentially supplies a plurality of processing liquids to the substrate W to process the substrate W. The plurality of processing liquids include a first chemical liquid, a second chemical liquid, and a rinse liquid. In the present embodiment, the first chemical liquid is an acidic chemical liquid. The second chemical liquid is an alkaline chemical liquid. The first chemical liquid, for example, contains DHF (diluted hydrofluoric acid) or BHF (buffered hydrofluoric acid). The second chemical liquid, for example, contains tetramethylammonium hydroxide (TMAH). In the present embodiment, the first chemical liquid is DHF. The second chemical liquid is TMAH.

[0096] In this embodiment, each of the substrate processing units 200 performs etching processing on the substrate W. Specifically, each of the substrate processing units 200 uses the first chemical solution (DHF) to remove the natural oxide film 340 from the surface of the substrate W, and then uses the second chemical solution (TMAH) to etch the substrate W. More specifically, the substrate W includes a polysilicon layer 332 (see Figure 4 (b) in FIG. 2 ). Each of the substrate processing units 200 etches the polysilicon layer 332 using the second chemical solution (TMAH).

[0097] In the present embodiment, the rinsing liquid is deionized water (DIW). For example, the rinsing liquid may also be so-called "ultrapure water". However, the rinsing liquid is not limited to deionized water. For example, the rinsing liquid may be carbonated water, electrolytic ionized water, hydrogen-containing water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm).

[0098] The control device 10 controls the operation of each unit of the substrate processing apparatus 100. For example, the control device 10 controls the substrate processing unit 200, the load port LP, the indexer robot IR, and the central robot CR. The control device 10 includes a control unit 11 and a storage unit 12.

[0099] The control unit 11 controls the operation of each unit of the substrate processing device 100 according to various information stored in the storage unit 12. The control unit 11 has a processor, for example. The control unit 11 may also have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as a processor. Alternatively, the control unit 11 may also have a general-purpose computing device or a dedicated computing device.

[0100] The storage unit 12 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 12 stores various data and various computer programs. The various data include process data. The process data indicates a process that specifies the processing content, processing conditions, and processing sequence of the substrate W. In the process, various setting values ​​are set as processing conditions when the substrate processing is executed.

[0101] The storage unit 12 includes a main storage device. The main storage device includes, for example, a semiconductor memory. The storage unit 12 may also include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 12 may also include a removable medium.

[0102] Next, refer to Figure 1 and Figure 2 The substrate processing apparatus 100 according to the present embodiment will be further described. Figure 2 It is a cross-sectional view schematically showing the structure of a substrate processing unit 200 included in the substrate processing apparatus 100 according to the present embodiment.

[0103] like Figure 2 As shown, the substrate processing unit 200 includes a processing chamber 201, a substrate holding unit 2, a substrate rotating unit 3, a processing liquid supply unit 4, a first nozzle moving unit 51, a second nozzle moving unit 52, a plurality of guard units 6, and a lifting unit 7. In addition, the substrate processing apparatus 100 further includes a drain unit 8 and a recovery unit 9.

[0104] The substrate W is carried into the processing chamber 201 and processed in the processing chamber 201. The processing chamber 201 has a substantially box shape. The processing chamber 201 accommodates the substrate holding part 2, the substrate rotating part 3, a part of the processing liquid supply part 4, the first nozzle moving part 51, the second nozzle moving part 52, a plurality of guard parts 6, the lifting part 7, a part of the drain part 8, and a part of the recovery part 9. The processing chamber 201 is, for example, a chamber.

[0105] The substrate holding part 2 holds the substrate W horizontally. The substrate holding part 2 is controlled by the control device 10 (control part 11). The substrate holding part 2 is, for example, a rotary chuck. Figure 2 As shown, the substrate holding portion 2 may include a rotation base 21 and a plurality of chuck members 22 .

[0106] The rotating base 21 is roughly disk-shaped and supports a plurality of chuck components 22 in a horizontal posture. The plurality of chuck components 22 are arranged at the peripheral portion of the rotating base 21. The plurality of chuck components 22 clamp the peripheral portion of the substrate W. The substrate W is held in a horizontal posture by the plurality of chuck components 22. The movement of the plurality of chuck components 22 is controlled by the control device 10 (control unit 11). The plurality of chuck components 22 are arranged in such a manner that the center of the substrate W is opposite to the center of the rotating base 21 in the vertical direction D1.

[0107] The substrate rotating part 3 rotates the substrate holding part 2 around the first rotation axis AX1 extending in the up-down direction D1, thereby rotating the substrate W and the substrate holding part 2 integrally. More specifically, the first rotation axis AX1 passes through the center of the rotating base 21. Therefore, the rotating base 21 rotates around the center of the rotating base 21 as the rotation center. In addition, as already described, the center of the substrate W is opposite to the center of the rotating base 21 in the up-down direction D1. Therefore, the substrate W rotates around the center of the substrate W as the rotation center. The first rotation axis AX1 is an example of a "center axis". The substrate rotating part 3 is controlled by the control device 10 (control part 11).

[0108] like Figure 2 As shown, the substrate rotating unit 3 may include, for example, a motor body 31 and a shaft 32. The shaft 32 is coupled to the rotating base 21. The motor body 31 rotates the shaft 32. As a result, the rotating base 21 rotates. The operation of the motor body 31 is controlled by the control device 10 (control unit 11).

[0109] The processing liquid supply unit 4 supplies a plurality of processing liquids to the substrate W. The processing liquid supply unit 4 is controlled by the control device 10 (control unit 11 ). Specifically, the processing liquid supply unit 4 includes a first chemical liquid supply unit 41 , a second chemical liquid supply unit 42 , and a rinse liquid supply unit 43 .

[0110] The first chemical liquid supply unit 41 is controlled by the control device 10 (control unit 11) to supply the first chemical liquid to the substrate W held by the substrate holding unit 2. Specifically, the first chemical liquid supply unit 41 supplies the first chemical liquid to the rotating substrate W. In the present embodiment, the first chemical liquid supply unit 41 supplies DHF to the substrate W.

[0111] Specifically, if Figure 2 As shown in FIG. 1 , the first liquid supply unit 41 includes a first discharge nozzle 41a, a first liquid supply pipe 41b, and a first liquid on-off valve 41c. The processing chamber 201 accommodates the first discharge nozzle 41a and a portion of the first liquid supply pipe 41b. In this embodiment, the first liquid on-off valve 41c is disposed outside the processing chamber 201. Specifically, the first liquid on-off valve 41c is accommodated in the reference Figure 1The first chemical solution supply pipe 41b is introduced from the outside of the processing chamber 201 to the inside. Specifically, the first chemical solution supply pipe 41b is introduced from the fluid box 102 to the inside of the processing chamber 201.

[0112] The first discharge nozzle 41 a discharges the first chemical liquid (DHF) from above the rotating substrate W toward the upper surface of the substrate W. As a result, the first chemical liquid is supplied to the substrate W, and a liquid film LF1 of the first chemical liquid is formed on the upper surface of the substrate W.

[0113] The first chemical liquid supply pipe 41b is, for example, a tube. One end of the first chemical liquid supply pipe 41b is connected to the first discharge nozzle 41a. The first chemical liquid supply pipe 41b supplies the first chemical liquid (DHF) to the first discharge nozzle 41a.

[0114] First chemical liquid on-off valve 41c is installed to be interposed on first chemical liquid supply pipe 41b. First chemical liquid on-off valve 41c controls supply of the first chemical liquid (DHF) to first discharge nozzle 41a and stops supply of the first chemical liquid (DHF) to first discharge nozzle 41a.

[0115] Specifically, the first liquid medicine on-off valve 41c can be switched between an open state and a closed state. The control device 10 (control unit 11) controls the opening and closing action of the first liquid medicine on-off valve 41c. The actuator of the first liquid medicine on-off valve 41c is, for example, a pneumatic actuator or an electric actuator. When the first liquid medicine on-off valve 41c is in an open state, the first liquid medicine (DHF) flows to the first discharge nozzle 41a via the first liquid medicine supply pipe 41b. On the other hand, when the first liquid medicine on-off valve 41c is in a closed state, the flow of the first liquid medicine via the first liquid medicine supply pipe 41b stops.

[0116] The first nozzle moving unit 51 moves the first discharge nozzle 41a along the horizontal plane. The operation of the first nozzle moving unit 51 is controlled by the control device 10 (control unit 11). More specifically, the first nozzle moving unit 51 moves the first discharge nozzle 41a to the first retreat position EP1 (see Figure 3 ) and the processing position. The first retreat position EP1 is a position outside the substrate holding portion 2. For example, the first retreat position EP1 may also be a position outside the plurality of guards 6. In the present embodiment, the processing position of the first discharge nozzle 41a is a position CP (see FIG. 1 ) relative to the center of the substrate W in the up-down direction D1. Figure 3 Hereinafter, the position CP facing the center of the substrate W may be referred to as “center position CP”. The first discharge nozzle 41 a supplies the first chemical solution (DHF) to the substrate W from the center position CP (processing position).

[0117] like Figure 2As shown, the first nozzle moving part 51 may also include a first nozzle arm 51a, a first nozzle base 51b, and a first nozzle moving mechanism 51c. The first nozzle base 51b extends in the up-down direction D1. The base end of the first nozzle arm 51a is connected to the first nozzle base 51b. The first nozzle arm 51a extends in the horizontal direction from the first nozzle base 51b.

[0118] The first nozzle arm 51a supports the first discharge nozzle 41a. The first discharge nozzle 41a protrudes downward from the first nozzle arm 51a. The first discharge nozzle 41a may be disposed at the front end of the first nozzle arm 51a.

[0119] The first nozzle moving mechanism 51c rotates the first nozzle base 51b in both forward and reverse directions around the second rotation axis AX2 extending in the vertical direction D1. As a result, the first discharge nozzle 41a moves around the first nozzle base 51b in the circumferential direction around the second rotation axis AX2.

[0120] The first nozzle moving mechanism 51c is controlled by the control device 10 (control unit 11). The actuator of the first nozzle moving mechanism 51c includes, for example, a ball screw mechanism and an electric motor capable of forward and reverse rotation. The electric motor applies a driving force to the ball screw mechanism. Alternatively, the actuator of the first nozzle moving mechanism 51c may also include an electric motor capable of forward and reverse rotation and a speed reducer.

[0121] The second chemical liquid supply unit 42 supplies the second chemical liquid to the substrate W held by the substrate holding unit 2. Specifically, the second chemical liquid supply unit 42 is controlled by the control device 10 (control unit 11) to supply the second chemical liquid to the rotating substrate W. In the present embodiment, the second chemical liquid supply unit 42 supplies TMAH to the substrate W.

[0122] Specifically, if Figure 2 As shown, the second liquid supply unit 42 includes a second discharge nozzle 42a, a second liquid supply pipe 42b, a second liquid on-off valve 42c, and a heater 42d. The processing chamber 201 accommodates the second discharge nozzle 42a and a portion of the second liquid supply pipe 42b. In this embodiment, the second liquid on-off valve 42c and the heater 42d are arranged outside the processing chamber 201. Specifically, the second liquid on-off valve 42c and the heater 42d are accommodated in the reference chamber 201. Figure 1 The second chemical solution supply pipe 42b is introduced from the outside of the processing chamber 201 to the inside. Specifically, the second chemical solution supply pipe 42b is introduced from the fluid box 102 to the inside of the processing chamber 201.

[0123] The second discharge nozzle 42a discharges the second chemical liquid (TMAH) from above the rotating substrate W toward the upper surface of the substrate W. As a result, the second chemical liquid is supplied to the substrate W, and a liquid film LF3 of the second chemical liquid is formed on the upper surface of the substrate W. The second chemical liquid supply pipe 42b supplies the second chemical liquid to the second discharge nozzle 42a. The second chemical liquid on-off valve 42c controls the supply of the second chemical liquid to the second discharge nozzle 42a and stops the supply of the second chemical liquid to the second discharge nozzle 42a. The configuration of the second discharge nozzle 42a, the second chemical liquid supply pipe 42b, and the second chemical liquid on-off valve 42c is substantially the same as that of the first discharge nozzle 41a, the first chemical liquid supply pipe 41b, and the first chemical liquid on-off valve 41c, and therefore their detailed description is omitted.

[0124] The heater 42d is installed in the second liquid medicine supply piping 42b in an interposed manner. The heater 42d heats the second liquid medicine (TMAH) flowing through the second liquid medicine supply piping 42b. The start and stop of the drive of the heater 42d are controlled by the control device 10 (control unit 11). The control device 10 (control unit 11) may also control the temperature or set temperature of the heater 42d. For example, the heater 42d heats the second liquid medicine flowing through the second liquid medicine supply piping 42b so that the temperature of the second liquid medicine becomes 40°C.

[0125] The second nozzle moving unit 52 moves the second discharge nozzle 42a along the horizontal plane. The operation of the second nozzle moving unit 52 is controlled by the control device 10 (control unit 11). More specifically, the second nozzle moving unit 52 moves the second discharge nozzle 42a to the second retreat position EP2 (see Figure 3 ) and the center position CP. Furthermore, the second nozzle moving unit 52 moves the second discharge nozzle 42a between the center position CP and the first end relative position P1 (see Figure 3 ). The first end relative position P1 indicates the position relative to the end E of the substrate W in the vertical direction D1 (see Figure 3 ) relative position.

[0126] In the present embodiment, the second discharge nozzle 42a discharges the second chemical solution (TMAH) from the center position CP to the upper surface of the rotating substrate W. Furthermore, the second discharge nozzle 42a discharges the second chemical solution to the upper surface of the rotating substrate W while moving between the center position CP and the first end relative position P1. It should be noted that the second retreat position EP2 is a position outside the substrate holding portion 2, similar to the first retreat position EP1. For example, the second retreat position EP2 may also be a position outside the plurality of guard members 6.

[0127] like Figure 2As shown, the second nozzle moving part 52 may also include a second nozzle arm 52a, a second nozzle base 52b, and a second nozzle moving mechanism 52c. The second nozzle arm 52a supports the second discharge nozzle 42a. The base end of the second nozzle arm 52a is connected to the second nozzle base 52b. The second nozzle moving mechanism 52c rotates the second nozzle base 52b in both positive and negative directions around the third rotation axis AX3 extending in the up-down direction D1. The configurations of the second nozzle arm 52a, the second nozzle base 52b, and the second nozzle moving mechanism 52c are substantially the same as those of the first nozzle arm 51a, the first nozzle base 51b, and the first nozzle moving mechanism 51c, and therefore their detailed description is omitted.

[0128] The rinse liquid supply unit 43 supplies the rinse liquid to the substrate W held on the substrate holding unit 2. Specifically, the rinse liquid supply unit 43 is controlled by the control device 10 (control unit 11) to supply the rinse liquid to the substrate W being rotated.

[0129] In detail, Figure 2 As shown in FIG. 1 , the rinsing liquid supply unit 43 includes a third discharge nozzle 43a, a rinsing liquid supply pipe 43b, and a rinsing liquid on-off valve 43c. The processing chamber 201 accommodates the third discharge nozzle 43a and a portion of the rinsing liquid supply pipe 43b. In this embodiment, the rinsing liquid on-off valve 43c is arranged outside the processing chamber 201. Specifically, the rinsing liquid on-off valve 43c is accommodated in the reference Figure 1 The rinse liquid supply pipe 43b is introduced from the outside of the processing chamber 201 to the inside. Specifically, the rinse liquid supply pipe 43b is introduced from the fluid box 102 to the inside of the processing chamber 201.

[0130] The third discharge nozzle 43a is a fixed nozzle that discharges the rinse liquid from a certain position onto the upper surface of the substrate W that is rotating and held on the substrate holding portion 2. As a result, the rinse liquid is supplied to the substrate W, and a liquid film LF2 of the rinse liquid is formed on the upper surface of the substrate W. The rinse liquid supply pipe 43b supplies the rinse liquid to the third discharge nozzle 43a. The rinse liquid on-off valve 43c controls the supply of the rinse liquid to the third discharge nozzle 43a and stops the supply of the rinse liquid to the third discharge nozzle 43a. The configuration of the third discharge nozzle 43a, the rinse liquid supply pipe 43b, and the rinse liquid on-off valve 43c is substantially the same as that of the first discharge nozzle 41a, the first chemical liquid supply pipe 41b, and the first chemical liquid on-off valve 41c, and therefore, their detailed description is omitted.

[0131] The plurality of shielding members 6 surround the substrate W held on the substrate holding member 2 to block the processing liquid discharged from the substrate W. Figure 2As shown, in this embodiment, the plurality of guard members 6 include a first guard member 6a, a second guard member 6b, and a third guard member 6c. The first guard member 6a, the second guard member 6b, and the third guard member 6c are arranged outside the substrate holding member 2 and the substrate rotating member 3.

[0132] More specifically, the first guard part 6a is the guard part 6 disposed most innermost among the first guard part 6a, the second guard part 6b, and the third guard part 6c. That is, among the first guard part 6a, the second guard part 6b, and the third guard part 6c, the guard part 6 closest to the substrate holding part 2 and the substrate rotating part 3 is the first guard part 6a.

[0133] The second guard portion 6b is arranged outside the first guard portion 6a. The third guard portion 6c is arranged outside the second guard portion 6b. That is, the second guard portion 6b is arranged between the first guard portion 6a and the third guard portion 6c.

[0134] The third guard portion 6c is the guard portion 6 disposed on the outermost side among the first guard portion 6a, the second guard portion 6b, and the third guard portion 6c. That is, among the first guard portion 6a, the second guard portion 6b, and the third guard portion 6c, the guard portion 6 farthest from the substrate holding portion 2 and the substrate rotating portion 3 is the third guard portion 6c.

[0135] Specifically, the first guard portion 6a includes a first guard 61a, a first cup 62a, and a second cup 62b. The second guard portion 6b includes a second guard 61b and a third cup 62c. The third guard portion 6c includes a third guard 61c.

[0136] The first guard 61a is substantially cylindrical with the first rotation axis AX1 as the center, and surrounds the substrate holding portion 2 and the substrate rotating portion 3. Specifically, the first guard 61a has a substantially cylindrical side wall portion and a substantially cylindrical inclined wall portion. The side wall portion extends in the up-down direction D1. The inclined wall portion is connected to the upper end of the side wall portion, and extends obliquely upward from the upper end of the side wall portion toward the first rotation axis AX1. The inclined wall portion constitutes the upper portion of the first guard 61a.

[0137] The first guard 61a blocks the processing liquid discharged from the substrate W. Specifically, the processing liquid discharged from the substrate W is blocked by the inner wall surface of the first guard 61a.

[0138] The first cup 62a is connected to the lower end of the first protective member 61a (side wall portion). The first cup 62a is annular, and a circular ring-shaped liquid receiving groove with an open upper surface is formed on the inner side of the first protective member 61a. That is, the first cup 62a is arranged on the inner side of the first protective member 61a. The processing liquid blocked by the first protective member 61a (inner wall surface) flows into the first cup 62a due to its own weight. In addition, the processing liquid that collides with the first protective member 61a (inner wall surface) and rebounds falls into the first cup 62a due to its own weight. As a result, the processing liquid is collected in the first cup 62a (liquid receiving groove).

[0139] The second cup 62b is connected to the outer wall surface of the first guard 61a. In this embodiment, the second cup 62b is connected to the lower end of the first guard 61a (side wall portion). The second cup 62b is annular, and a circular liquid receiving groove with an open upper surface is formed on the outer side of the first guard 61a. That is, the second cup 62b is provided on the outer side of the first guard 61a.

[0140] The second guard 61b is disposed outside the first guard 61a. The second guard 61b is substantially cylindrical with the first rotation axis AX1 as the first guard 61a. The second guard 61b is substantially the same in structure as the first guard 61a, so detailed description thereof is omitted.

[0141] The second protective member 61b blocks the processing liquid discharged from the substrate W. Specifically, the processing liquid discharged from the substrate W is blocked by the inner wall surface of the second protective member 61b. The lower end of the second protective member 61b (side wall portion) is located on the inner side of the second cup 62b (liquid receiving tank). The processing liquid blocked by the second protective member 61b (inner wall surface) flows into the second cup 62b due to its own weight. In addition, the processing liquid that collides with the second protective member 61b (inner wall surface) and rebounds falls into the second cup 62b due to its own weight. As a result, the processing liquid is collected in the second cup 62b (liquid receiving tank).

[0142] The third cup 62c is connected to the outer wall surface of the second guard 61b. The third cup 62c is annular, and an annular liquid receiving groove with an open upper surface is formed outside the second guard 61b. That is, the third cup 62c is provided outside the second guard 61b.

[0143] The third guard 61c is arranged outside the second guard 61b. The third guard 61c is substantially cylindrical with the first rotation axis AX1 as the center, similarly to the first guard 61a and the second guard 61b. The third guard 61c is substantially the same in structure as the first guard 61a and the second guard 61b, and thus a detailed description thereof is omitted.

[0144] The third protective member 61c blocks the processing liquid discharged from the substrate W. Specifically, the processing liquid discharged from the substrate W is blocked by the inner wall surface of the third protective member 61c. The lower end of the third protective member 61c (side wall portion) is located on the inner side of the third cup 62c (liquid receiving tank). The processing liquid blocked by the third protective member 61c (inner wall surface) flows into the third cup 62c due to its own weight. In addition, the processing liquid that collides with the third protective member 61c (inner wall surface) and rebounds falls into the third cup 62c due to its own weight. As a result, the processing liquid is collected in the third cup 62c (liquid receiving tank).

[0145] The lifting unit 7 lifts the plurality of guard members 6 individually, and switches the guard member 6 that surrounds the substrate W held on the substrate holding unit 2 among the plurality of guard members 6. In the present embodiment, the lifting unit 7 lifts the first guard member 6a to the third guard member 6c individually along the up-down direction D1. The lifting unit 7 is controlled by the control device 10 (control unit 11). In detail, the lifting unit 7 lifts the first guard member 6a to the third guard member 6c between the upper position and the lower position respectively along the up-down direction D1. The upper position is a position above the lower position.

[0146] For example, in the case of a central robot CR ( Figure 1 ) when the substrate W is carried into the processing chamber 201, or when the central robot CR ( Figure 1 ) When the substrate W is carried out from the inside of the processing chamber 201 to the outside, the first guard part 6a to the third guard part 6c are located in the lower position. In addition, when the processing liquid discharged from the substrate W is blocked by the first guard part 6a (the first guard 61a), the first guard part 6a to the third guard part 6c are located in the upper position. When the processing liquid discharged from the substrate W is blocked by the second guard part 6b (the second guard 61b), the first guard part 6a is located in the lower position, and the second guard part 6b and the third guard part 6c are located in the upper position. When the processing liquid discharged from the substrate W is blocked by the third guard part 6c (the third guard 61c), the first guard part 6a and the second guard part 6b are located in the lower position, and the third guard part 6c is located in the upper position.

[0147] like Figure 2 As shown, in this embodiment, the lifting unit 7 includes a first lifting unit 71, a second lifting unit 72, and a third lifting unit 73. The first lifting unit 71 lifts the first guard member 6a between an upper position and a lower position along the vertical direction D1. The second lifting unit 72 lifts the second guard member 6b between an upper position and a lower position along the vertical direction D1. The third lifting unit 73 lifts the third guard member 6c between an upper position and a lower position along the vertical direction D1.

[0148] The first lifting part 71 to the third lifting part 73 are controlled by the control device 10 (control part 11). The actuators of the first lifting part 71 to the third lifting part 73 include, for example, a ball screw mechanism and an electric motor capable of forward and reverse rotation. The electric motor applies a driving force to the ball screw mechanism. Alternatively, the actuators of the first lifting part 71 to the third lifting part 73 may include an electric motor capable of forward and reverse rotation, and a speed reducer, and may also include a cylinder such as a cylinder.

[0149] The drain unit 8 discharges a portion of the processing liquid blocked by the plurality of guard units 6 to the outside of the processing chamber 201. That is, the drain unit 8 discharges a portion of the processing liquid used in substrate processing to the outside of the processing chamber 201. In this embodiment, the first chemical solution (DHF) and the rinse liquid are discharged.

[0150] Specifically, the drain portion 8 discharges the processing liquid blocked by the first guard portion 6a (first guard 61a) to the outside of the processing chamber 201. Specifically, the drain portion 8 discharges the processing liquid collected in the first cup 62a to the outside of the processing chamber 201. In addition, the drain portion 8 discharges the processing liquid blocked by the third guard portion 6c (third guard 61c) to the outside of the processing chamber 201. Specifically, the drain portion 8 discharges the processing liquid collected in the third cup 62c to the outside of the processing chamber 201.

[0151] like Figure 2 As shown, in this embodiment, the drain unit 8 includes a first drain unit 81 and a second drain unit 82. In addition, the substrate processing apparatus 100 further includes a drain tank 84. The drain tank 84 is disposed outside the processing chamber 201.

[0152] The first drain portion 81 discharges the processing liquid collected in the first cup 62a to the drain tank 84. Specifically, the first drain portion 81 includes a first drain pipe 81a and a first drain on-off valve 81b. The processing chamber 201 accommodates a portion of the first drain pipe 81a. In the present embodiment, the first drain on-off valve 81b is disposed outside the processing chamber 201. The first drain pipe 81a is led out from the inside of the processing chamber 201 to the outside.

[0153] The first drain pipe 81a is, for example, a tube. One end of the first drain pipe 81a is connected to the bottom of the first cup 62a. Specifically, the first drain pipe 81a is connected to the inner space of the first cup 62a (liquid receiving tank). The processing liquid collected in the first cup 62a flows into the first drain pipe 81a. The other end of the first drain pipe 81a is connected to the drain tank 84.

[0154] The first drain on-off valve 81b is installed to be interposed on the first drain pipe 81a. The first drain on-off valve 81b controls the flow of the processing liquid through the first drain pipe 81a and stops the flow of the processing liquid through the first drain pipe 81a.

[0155] Specifically, the first drain on-off valve 81b can be switched between an open state and a closed state. The control device 10 (control unit 11) controls the opening and closing action of the first drain on-off valve 81b. The actuator of the first drain on-off valve 81b is, for example, a pneumatic actuator or an electric actuator. When the first drain on-off valve 81b is in an open state, the processing liquid flows to the drain tank 84 via the first drain pipe 81a. On the other hand, when the first drain on-off valve 81b is in a closed state, the circulation of the processing liquid via the first drain pipe 81a is stopped.

[0156] The second drain portion 82 discharges the processing liquid collected in the third cup 62c to the drain tank 84. Specifically, the second drain portion 82 includes a second drain pipe 82a and a second drain on-off valve 82b. The processing chamber 201 accommodates a portion of the second drain pipe 82a. In the present embodiment, the second drain on-off valve 82b is disposed outside the processing chamber 201. The second drain pipe 82a is led out from the inside of the processing chamber 201 to the outside.

[0157] One end of the second drain pipe 82a is connected to the bottom of the third cup 62c. The processing liquid collected in the third cup 62c flows into the second drain pipe 82a. The other end of the second drain pipe 82a is connected to the drain tank 84. The structure of the second drain pipe 82a is substantially the same as that of the first drain pipe 81a, so its detailed description is omitted.

[0158] The second drain opening and closing valve 82b is installed in the second drain piping 82a in an interposed manner. When the second drain opening and closing valve 82b is in an open state, the processing liquid flows to the drain tank 84 via the second drain piping 82a. On the other hand, when the second drain opening and closing valve 82b is in a closed state, the circulation of the processing liquid via the second drain piping 82a is stopped. The structure of the second drain opening and closing valve 82b is substantially the same as that of the first drain opening and closing valve 81b, so its detailed description is omitted.

[0159] The recovery unit 9 recovers another part of the processing liquid blocked by the plurality of guard members 6. In addition, the recovery unit 9 allows the recovered processing liquid to flow to the reference Figure 1 As a result, another part of the processing liquid used in the substrate processing is again contained in the fluid chamber 101 and is reused in the next substrate processing. In this embodiment, the second chemical solution (TMAH) is recovered and reused for substrate processing.

[0160] Specifically, the recovery unit 9 recovers the processing liquid blocked by the second guard unit 6b (second guard 61b). Specifically, the recovery unit 9 recovers the processing liquid collected in the second cup 62b.

[0161] like Figure 2 As shown, in this embodiment, the recovery part 9 has a recovery pipe 91 and a recovery on-off valve 92. The processing chamber 201 accommodates a part of the recovery pipe 91. In this embodiment, the recovery on-off valve 92 is arranged outside the processing chamber 201. The recovery pipe 91 is led out from the inside of the processing chamber 201 to the outside.

[0162] One end of the recovery pipe 91 is connected to the bottom of the second cup 62b. The processing liquid collected in the second cup 62b flows into the recovery pipe 91. The other end of the recovery pipe 91 is connected to the fluid chamber 101. The structure of the recovery pipe 91 is substantially the same as that of the first drain pipe 81a and the second drain pipe 82a, so its detailed description is omitted.

[0163] The recovery on-off valve 92 is installed in the recovery pipe 91 in an interposed manner. When the recovery on-off valve 92 is in an open state, the processing liquid flows to the fluid chamber 101 through the recovery pipe 91. On the other hand, when the recovery on-off valve 92 is in a closed state, the circulation of the processing liquid through the recovery pipe 91 is stopped. The configuration of the recovery on-off valve 92 is substantially the same as that of the first drain on-off valve 81b and the second drain on-off valve 82b, and therefore a detailed description thereof is omitted.

[0164] Figure 3 1 is a diagram showing a movement trajectory J of the second discharge nozzle 42a included in the substrate processing apparatus 100 of the present embodiment. Figure 3 As shown, the second nozzle moving unit 52 moves the second discharge nozzle 42 a horizontally along an arc-shaped movement trajectory J passing through the center position CP (a position facing the center of the substrate W).

[0165] When the second discharge nozzle 42a starts to discharge the second chemical solution (TMAH), the control device 10 (control unit 11) controls the second nozzle moving unit 52 to move the second discharge nozzle 42a from the second retreat position EP2 to the center position CP. Then, the control device 10 (control unit 11) controls the second chemical solution supply unit 42 to discharge the second chemical solution from the second discharge nozzle 42a. As a result, the second discharge nozzle 42a discharges the second chemical solution from the center position CP to the center of the rotating substrate W.

[0166] The control device 10 (control unit 11) controls the second nozzle moving unit 52 in response to a predetermined time elapsed from the start of discharge of the second chemical liquid, so as to control the second chemical liquid supply unit 42 to discharge the second chemical liquid from the second discharge nozzle 42a while moving the second discharge nozzle 42a above the substrate W held by the substrate holding unit 2. As a result, the second discharge nozzle 42a discharges the second chemical liquid while moving in the horizontal direction above the rotating substrate W. It should be noted that the control device 10 (control unit 11) starts the movement of the second discharge nozzle 42a after the entire upper surface of the substrate W is covered with the second chemical liquid.

[0167] In detail, the moving trajectory J passes through two positions (the first end relative position P1 and the second end relative position P2) relative to the end E of the substrate W. The first end relative position P1 indicates a position on the side away from the second retreat position EP2 between the first end relative position P1 and the second end relative position P2. The second end relative position P2 indicates a position on the side close to the second retreat position EP2 between the first end relative position P1 and the second end relative position P2. In the present embodiment, the control device 10 (control unit 11) causes the second discharge nozzle 42a to discharge the second chemical solution from the second discharge nozzle 42a while repeatedly moving the second discharge nozzle 42a between the center position CP and the first end relative position P1. That is, the control device 10 (control unit 11) causes the second discharge nozzle 42a to perform a half scan.

[0168] The control device 10 (control unit 11) ends the half scan in response to a predetermined scan processing time having passed since the start of the half scan. The scan processing time is, for example, 40 seconds. During this period, the second discharge nozzle 42a repeatedly moves (reciprocates) between the center position CP and the first end relative position P1.

[0169] In more detail, the control device 10 (control unit 11) causes the second discharge nozzle 42a to stop at the center position CP for the first stop time, and then moves the second discharge nozzle 42a to the first end relative position P1. Then, the control device 10 (control unit 11) causes the second discharge nozzle 42a to stop at the first end relative position P1 for the second stop time, and then moves the second discharge nozzle 42a to the center position CP. The control device 10 (control unit 11) causes the second discharge nozzle 42a to discharge the second liquid medicine while the second discharge nozzle 42a stops at the center position CP. The control device 10 (control unit 11) causes the second discharge nozzle 42a to discharge the second liquid medicine while the second discharge nozzle 42a moves between the center position CP and the first end relative position P1. The control device 10 (control unit 11) causes the second discharge nozzle 42a to discharge the second liquid medicine while the second discharge nozzle 42a stops at the first end relative position P1.

[0170] The first stop time is longer than the second stop time. For example, the first stop time is 2 seconds. The second stop time is 1 second. According to the present embodiment, since the first stop time is longer than the second stop time, the liquid film is less likely to become thinner in the center of the substrate W during the half scan. In other words, the so-called "liquid interruption" is less likely to occur in the center of the substrate W. Therefore, the coverage can be maintained during the half scan.

[0171] As described above, in the present embodiment, TMAH having a temperature higher than room temperature (40° C.) is used as the second chemical liquid. Therefore, when the second chemical liquid is discharged only from the center position CP without scanning the second discharge nozzle 42a, the temperature of the second chemical liquid covering the end E of the substrate W may become lower than the temperature of the second chemical liquid covering the center portion of the substrate W. In contrast, according to the present embodiment, when the second chemical liquid is discharged from the second discharge nozzle 42a, the second discharge nozzle 42a is scanned. As a result, the temperature of the second chemical liquid (TMAH) in contact with the substrate W can be made substantially uniform between the center portion and the end portion E of the substrate W.

[0172] It should be noted that, in the present embodiment, the control device 10 (control unit 11) moves the second discharge nozzle 42a between the center position CP and the first end relative position P1, but the control device 10 (control unit 11) may also move the second discharge nozzle 42a between the center position CP and the second end relative position P2. Alternatively, the control device 10 (control unit 11) may also move the second discharge nozzle 42a between the first end relative position P1 and the second end relative position P2. That is, the control device 10 (control unit 11) may also cause the second discharge nozzle 42a to perform a full scan. In this case, the second discharge nozzle 42a may also be temporarily stopped at the center position CP during the full scan.

[0173] Next, refer to Figure 3 Next, the movement of the first discharge nozzle 41a will be described. The first nozzle moving unit 51, like the second nozzle moving unit 52, horizontally moves the first discharge nozzle 41a along an arc-shaped movement trajectory passing through the center position CP.

[0174] When the first discharge nozzle 41a starts to discharge the first chemical solution (DHF), the control device 10 (control unit 11) controls the first nozzle moving unit 51 to move the first discharge nozzle 41a from the first retreat position EP1 to the center position CP. In addition, the control device 10 (control unit 11) controls the first chemical solution supply unit 41 to discharge the first chemical solution from the first discharge nozzle 41a. As a result, the first discharge nozzle 41a discharges the first chemical solution from the center position CP to the center of the rotating substrate W.

[0175] Next, refer to Figure 4 (a) and Figure 4 (b) in FIG. 1 illustrates an example of a substrate W processed by the substrate processing apparatus 100 . Figure 4 (a) is an enlarged top view schematically showing an example of a substrate W processed by the substrate processing apparatus 100 of the present embodiment. Figure 4 (a) in FIG. 1 shows a part of the upper surface of the substrate W in an enlarged manner. Figure 4 (b) is an enlarged cross-sectional view schematically showing an example of a substrate W processed by the substrate processing apparatus 100 of the present embodiment. Figure 4 (b) shows the Figure 4 FIG. 1 is a cross section of the substrate W cut along the IVB-IVB cutting line in (a).

[0176] like Figure 4 As shown in (a) of FIG. 1 , the substrate W has a pattern PT. The pattern PT includes a plurality of recesses 320. Each recess 320 has an opening on the outermost surface Ws of the substrate W. More specifically, Figure 4 As shown in (b) of FIG. 1 , the substrate W includes a silicon substrate 310 and a pattern PT. The pattern PT is formed on the silicon substrate 310 .

[0177] Specifically, the pattern PT includes a multi-layer stacked structure 330 and a plurality of recesses 320. The stacked structure 330 includes a plurality of silicon oxide layers 331 and a plurality of polysilicon layers 332. The plurality of silicon oxide layers 331 and the plurality of polysilicon layers 332 are stacked in the thickness direction D2 of the substrate W in a manner that the silicon oxide layers 331 and the polysilicon layers 332 are alternately switched. The thickness direction D2 indicates a direction that is substantially orthogonal to the surface of the silicon substrate 310. The thickness direction D2 is substantially parallel to the up-down direction D1 when the substrate W is held on the substrate holding portion 2.

[0178] The recesses 320 are respectively recessed from the outermost surface Ws of the substrate W toward the silicon substrate 310 in the thickness direction D2 of the substrate W. In other words, the recesses 320 are respectively recessed in the direction in which the silicon oxide layer 331 and the polysilicon layer 332 are alternately stacked, that is, in the stacking direction. The recesses 320 penetrate the stacked structure 330 in the thickness direction D2 (stacking direction). In other words, the recesses 320 extend from the outermost surface Ws of the substrate W to the silicon substrate 310. Therefore, the deepest part of each recess 320 is adjacent to the upper surface of the silicon substrate 310. The recess 320 only needs to be recessed from the outermost surface Ws of the substrate W, and can be a groove or a hole, without any particular limitation.

[0179] Next, refer to Figure 5 (a)~ Figure 5 (c) of the accompanying drawings will now describe substrate processing performed by the substrate processing apparatus 100 . Figure 5(a) is an enlarged cross-sectional view schematically showing a portion of the substrate W before the first chemical solution (DHF) is supplied. Figure 5 (b) is an enlarged cross-sectional view schematically showing a portion of the substrate W before the second chemical solution (TMAH) is supplied. Figure 5 (c) is an enlarged cross-sectional view schematically showing a portion of the substrate W after the substrate processing.

[0180] like Figure 5 As shown in (a) of FIG. 1 , before the substrate processing is performed, a natural oxide film 340 is formed on the surface of the plurality of silicon oxide layers 331, the surface of the plurality of polysilicon layers 332, and the surface of the silicon substrate 310. The substrate processing apparatus 100 first supplies the first chemical solution (DHF) to the upper surface of the substrate W. As a result, as shown in FIG. Figure 5 As shown in FIG. 5( b ), the natural oxide film 340 is removed from the substrate W, and the side surfaces of the plurality of silicon oxide layers 331 and the side surfaces of the plurality of polysilicon layers 332 are exposed from the inner side surfaces of the respective recesses 320 .

[0181] The substrate processing apparatus 100 supplies the second chemical solution (TMAH) to the upper surface of the substrate W from which the natural oxide film 340 has been removed. Figure 5 As shown in (c) in FIG. 1 , among the plurality of silicon oxide layers 331 and the plurality of polysilicon layers 332, the plurality of polysilicon layers 332 are selectively etched, and a plurality of recesses 333 (recesses) are formed on the inner side surface of each recess 320. The recesses 333 are respectively recessed in the surface direction D3 of the substrate W. The surface direction D3 indicates a lateral direction substantially orthogonal to the thickness direction D2 (stacking direction) of the substrate W.

[0182] The substrate W may have a pattern PT with a high aspect ratio, for example. The aspect ratio of the pattern PT indicates the ratio of the depth in the thickness direction D2 to the width in the surface direction D3 of the recess 320. The pattern PT with a high aspect ratio includes, for example, 80 or more stacked structures 330.

[0183] Next, refer to Figure 1 to Figure 15 The substrate processing apparatus 100 and the substrate processing method of this embodiment are described. The substrate processing method of this embodiment is based on Figure 1 to Figure 5 The described substrate processing apparatus 100 performs. Figure 6 : is a flow chart showing the process of the substrate processing method of this embodiment. Figure 6 The following is a flow of processing executed by the control unit 11 (control device 10 ) included in the substrate processing apparatus 100 according to the present embodiment.

[0184] like Figure 6As shown, the substrate processing method of this embodiment includes step S1 (substrate moving-in process), step S2 (first liquid process), step S3 (first rinsing process), step S4 (removal process), step S5 (second liquid process), step S6 (second rinsing process), step S7 (drying process) and step S8 (substrate moving-out process).

[0185] In step S1, the control device 10 (control unit 11) performs a substrate carrying-in process. In step S2, the control device 10 (control unit 11) performs a first chemical liquid process. In step S3, the control device 10 (control unit 11) performs a first rinsing process. In step S4, the control device 10 (control unit 11) performs a removal process. In step S5, the control device 10 (control unit 11) performs a second chemical liquid process. In step S6, the control device 10 (control unit 11) performs a second rinsing process. In step S7, the control device 10 (control unit 11) performs a drying process. In step S8, the control device 10 (control unit 11) performs a substrate carrying-out process.

[0186] Figure 7 (a) is a diagram schematically showing the substrate processing unit 200 during the first chemical liquid processing. Figure 7 (b) is an enlarged cross-sectional view schematically showing a portion of the substrate W during the first chemical solution treatment. Figure 8 (a) is a diagram schematically showing a first state of the substrate processing unit 200 during the first rinsing process. Figure 8 (b) is an enlarged cross-sectional view schematically showing a portion of the substrate W during the first rinsing process. Fig. 9 (a) is a diagram schematically showing the second state of the substrate processing unit 200 during the first rinsing process. Fig. 9 (b) is a diagram schematically showing the third state of the substrate processing unit 200 during the first rinsing process. Fig.10 FIG. 2 is a diagram schematically showing the substrate processing unit 200 during the removal process. Fig.11 (a) is a diagram schematically showing the substrate processing unit 200 when the removal process is completed. Fig.11 (b) is an enlarged cross-sectional view schematically showing a portion of the substrate W at the end of the removal process. Fig.12 (a) is a diagram schematically showing the substrate processing unit 200 when the second chemical liquid processing starts. Fig.12 (b) is an enlarged cross-sectional view schematically showing a portion of the substrate W during the second chemical solution treatment. Fig.13 FIG. 2 is a diagram schematically showing the substrate processing unit 200 during scanning processing. Fig.14 FIG. 2 is a diagram schematically showing the substrate processing unit 200 during the second rinse process. Fig.15 FIG. 2 is a diagram schematically showing the substrate processing unit 200 during the drying process.

[0187] Figure 6 The process shown starts after the central robot CR receives the substrate W from the indexer robot IR. Figure 6 As shown, when the center robot CR receives the substrate W from the indexer robot IR, the control device 10 (control unit 11) executes a substrate carry-in process (step S1).

[0188] Specifically, the control device 10 (control unit 11) controls the central robot CR to carry the substrate W into the processing chamber 201. Then, the control device 10 (control unit 11) controls the substrate holding unit 2 to hold the substrate W carried in by the central robot CR. As a result, the substrate W is held horizontally in the processing chamber 201 by the substrate holding unit 2. Figure 1 to Figure 5 As described above, the substrate W has the pattern PT including the plurality of recesses 320 .

[0189] The control device 10 (control unit 11) performs the first liquid treatment (step S2) after the substrate W is held. The first liquid treatment refers to a process of controlling the treatment liquid supply unit 4 (first liquid supply unit 41) to supply the first liquid (DHF) to the substrate W. Figure 5 (a) and Figure 5 As described in (b) of FIG. 2 , the natural oxide film 340 is removed from the substrate W by supplying the first chemical solution (DHF) to the substrate W.

[0190] Specifically, if Figure 7 As shown in (a) of FIG. 1 , after the substrate W is held by the substrate holding portion 2, the control device 10 (control portion 11) controls the substrate rotating portion 3 to rotate the substrate W at a first rotation speed. The rotation speed indicates the number of rotations per unit time. The first rotation speed is, for example, 800 rpm.

[0191] After the substrate W is held by the substrate holding portion 2, the control device 10 (control unit 11) controls the lifting portion 7 to move the first guard portion 6a to the third guard portion 6c from the lower position to the upper position. In addition, the control device 10 (control unit 11) controls the first nozzle moving portion 51 to move the first discharge nozzle 41a from the first retreat position EP1 to the center position CP. Then, the control device 10 (control unit 11) controls the first liquid supply portion 41 to discharge the first liquid from the first discharge nozzle 41a. As a result, the first liquid is supplied to the upper surface of the rotating substrate W, and a liquid film LF1 of the first liquid is formed on the upper surface of the substrate W.

[0192] The first chemical liquid discharged from the rotating substrate W during the first chemical liquid treatment is blocked by the first guard portion 6 a (first guard 61 a ). The first chemical liquid blocked by the first guard portion 6 a is discharged to the drain tank 84 by the first drain portion 81 .

[0193] like Figure 7 As shown in (b) in FIG. 1 , by performing the first liquid treatment and supplying the first liquid to the substrate W, a liquid film LF1 of the first liquid is formed, and the first liquid enters each recess 320. As a result, the natural oxide film 340 formed on the surface of the plurality of silicon oxide layers 331, the surface of the plurality of polysilicon layers 332, and the surface of the silicon substrate 310 is removed by the first liquid (DHF).

[0194] The control device 10 (control unit 11) executes the first rinsing process ( Figure 6 The first rinsing process is a process of controlling the processing liquid supply unit 4 (rinsing liquid supply unit 43) to supply the rinsing liquid (first rinsing liquid) to the substrate W. The first chemical liquid is washed away from the substrate W by the first rinsing process.

[0195] Specifically, if Figure 8 As shown in (a) in FIG. 1 , the control device 10 (control unit 11) controls the first liquid supply unit 41 to stop the supply of the first liquid, and then controls the first nozzle moving unit 51 to move the first discharge nozzle 41a from the center position CP to the first retreat position EP1. In addition, the control device 10 (control unit 11) controls the substrate rotating unit 3 to rotate the substrate W at the second rotation speed. Then, the control device 10 (control unit 11) controls the rinse liquid supply unit 43 to discharge the rinse liquid from the third discharge nozzle 43a. In the present embodiment, the second rotation speed is the same rotation speed as the first rotation speed. That is, the control device 10 (control unit 11) maintains the rotation speed of the substrate W.

[0196] When the rinsing liquid is supplied to the upper surface of the rotating substrate W through the first rinsing process, the first chemical liquid is washed away from the substrate W, thereby forming a liquid film LF2 of the rinsing liquid on the upper surface of the substrate W. Figure 8 As shown in (b) in FIG. 8 , the rinse liquid enters each recess 320 , thereby discharging the first chemical liquid from each recess 320 , and washing the first chemical liquid from the substrate W.

[0197] The first chemical liquid and the rinse liquid discharged from the rotating substrate W in the first rinse process are blocked by the first guard 6a (first guard 61a). The first chemical liquid and the rinse liquid blocked by the first guard 6a are discharged to the drain tank 84 through the first drain unit 81.

[0198] The control device 10 (control section 11) controls the lifting section 7 to switch the guard section 6 surrounding the substrate W from the first guard section 6a (first guard 61a) to the second guard section 6b (second guard 61b) in response to a predetermined time elapsed from the start of the first rinsing process. Hereinafter, the process of switching the guard section 6 surrounding the substrate W from the first guard section 6a (first guard 61a) to the second guard section 6b (second guard 61b) is sometimes described as "first guard switching process".

[0199] like Figure 6 As shown, in this embodiment, step S3 (first rinsing process) includes step S31 and step S32. Specifically, the control device 10 (control unit 11) first controls the substrate rotating unit 3 to rotate the substrate W at the second rotation speed, and controls the processing liquid supply unit 4 (rinsing liquid supply unit 43) to supply the rinsing liquid to the rotating substrate W (step S31). As a result, the first chemical liquid is washed away from the substrate W, and a liquid film LF2 of the rinsing liquid is formed on the upper surface of the substrate W.

[0200] The control device 10 (control unit 11) executes the spinning immersion process in response to the elapse of a predetermined second set time from the start of the supply of the rinse liquid (step S32). The spinning immersion process is a process of maintaining the liquid film LF2 of the rinse liquid on the substrate W.

[0201] like Fig. 9 As shown in (a) in FIG. 1 , in the present embodiment, the control device 10 (control unit 11) controls the rinsing liquid supply unit 43 to stop the supply of the rinsing liquid. In addition, the control device 10 (control unit 11) controls the substrate rotating unit 3 to stop the rotation of the substrate W. As a result, the liquid film LF2 of the rinsing liquid is maintained on the substrate W.

[0202] like Fig. 9 As shown in (b) of FIG. 1 , the control device 10 (control unit 11) performs the first guard switching process during the execution of the spinning immersion process. That is, the control device 10 (control unit 11) controls the lifting unit 7 to switch the guard part 6 surrounding the substrate W from the first guard part 6a (first guard 61a) to the second guard part 6b (second guard 61b). Specifically, the control device 10 (control unit 11) controls the first lifting unit 71 to move the first guard part 6a (first guard 61a) from the upper position to the lower position.

[0203] The control device 10 (control unit 11) executes a removal process (a process of removing the rinse liquid from the substrate W) in response to a lapse of a predetermined third set time from the start of the spinning immersion process. Figure 6 Step S4).

[0204] Specifically, if Fig.10As shown, the control device 10 (control unit 11) controls the processing liquid supply unit 4 (rinsing liquid supply unit 43) to maintain the state of stopping the supply of the rinsing liquid, and controls the substrate rotating unit 3 to rotate the substrate W at the third rotation speed. The third rotation speed is, for example, 800 rpm. As a result, as shown in FIG. Fig.11 As shown in (a) of FIG. 1 , the rinsing liquid is removed from the substrate W. Specifically, Fig.11 As shown in (b) in FIG. 1 , the rinse liquid is discharged from each recess 320, and a state is achieved in which no rinse liquid remains in each recess 320. It should be noted that, unlike the drying process, the substrate W is not dried by the removal process.

[0205] The rinse liquid discharged from the rotating substrate W during the removal process is blocked by the second guard portion 6 b (second guard 61 b ​​). The rinse liquid blocked by the second guard portion 6 b is recovered by the recovery portion 9 into the fluid chamber 101 .

[0206] In the present embodiment, the removal process is performed after the rotary immersion process. Therefore, the control device 10 (control unit 11) stops the supply of the rinsing liquid throughout the process from the rotary immersion process to the removal process.

[0207] The control device 10 (control unit 11) executes the second chemical liquid treatment ( Figure 6 Step S5). The fourth set time is set to be longer than the time required to remove the rinsing liquid from each recess 320 included in the high aspect ratio pattern PT. For example, the fourth set time can also be selected from a range of more than 3 seconds and less than 5 seconds. According to this embodiment, the rinsing liquid can be removed from each recess 320 included in the high aspect ratio pattern PT by the removal process.

[0208] The second chemical liquid process refers to a process of controlling the process liquid supply unit 4 (the second chemical liquid supply unit 42 ) to supply the second chemical liquid (TMAH) to the substrate W. As a result, the plurality of polysilicon layers 332 included in the stacked structure 330 are etched.

[0209] Specifically, the control device 10 (control unit 11) controls the second nozzle moving unit 52 to move the second discharge nozzle 42a from the second retreat position EP2 to the center position CP. Fig.11 As shown in (a) in FIG. 8 , the control device 10 (control unit 11 ) moves the second discharge nozzle 42 a from the second retreat position EP2 to the center position CP during the removal process.

[0210] like Fig.12As shown in (a) of FIG. 1 , the control device 10 (control unit 11) controls the second liquid supply unit 42 to discharge the second liquid from the second discharge nozzle 42a in response to the 4th set time having passed since the start of the removal process. As a result, a liquid film LF3 of the second liquid is formed on the upper surface of the substrate W from which the rinse liquid has been removed. In detail, as Fig.12 As shown in (b) in FIG. 1 , the second chemical solution enters each recess 320. It should be noted that the control device 10 (control unit 11) controls the substrate rotating unit 3 to rotate the substrate W at the fourth rotation speed at the start of the second chemical solution treatment. The fourth rotation speed is, for example, 800 rpm.

[0211] The second chemical liquid discharged from the rotating substrate W during the second chemical liquid treatment is blocked by the second guard portion 6 b (second guard 61 b ​​). The second chemical liquid blocked by the second guard portion 6 b is recovered into the fluid chamber 101 by the recovery portion 9 .

[0212] According to this embodiment, as shown in FIG. Fig.11 As described in (b) in the figure, before the start of the second liquid treatment, no rinsing liquid remains in the recess 320, so the amount of depression of the depression 333 can be made uniform over the range from the opening of the recess 320 to the deepest part.

[0213] Specifically, when the second chemical solution is supplied to the substrate W in a state where the rinse liquid remains in the recess 320, the concentration of the second chemical solution may become diluted by the rinse liquid at a deeper position in the recess 320. That is, the concentration of the second chemical solution in the recess 320 may become non-uniform. If the concentration of the second chemical solution in the recess 320 becomes non-uniform, the etching amount of the polysilicon layer 332 becomes non-uniform, and the depression amount of the concave portion 333 becomes non-uniform.

[0214] In contrast, according to the present embodiment, no rinsing liquid remains in the recess 320 before the second liquid treatment is started, so the concentration of the second liquid can be made substantially uniform from the opening to the deepest portion of the recess 320. As a result, the etching amount of the polysilicon layer 332 can be made uniform from the opening to the deepest portion of the recess 320. Therefore, the amount of depression of the concave portion 333 can be made uniform over the range from the opening to the deepest portion of the recess 320.

[0215] In addition, when the first protection member switching process is performed after the removal process, the time that the surface of the substrate W is exposed to the atmosphere becomes longer. In contrast, according to the present embodiment, since the first protection member switching process is performed before the removal process, the time that the surface of the substrate W is exposed to the atmosphere after the removal process can be shortened. Specifically, compared with the case where the first protection member switching process is performed after the removal process, the state where the upper surface of the substrate W is not covered by the liquid film (liquid film LF2 of the rinse liquid) can be changed to the state where the upper surface of the substrate W is covered by the liquid film (liquid film LF3 of the second chemical liquid) in a short time. Therefore, the formation of a natural oxide film on the surface of the substrate W can be suppressed.

[0216] In addition, according to the present embodiment, the removal process is performed after the capping and immersion process. The liquid film LF2 of the rinsing liquid in the capping and immersion process is thinner than the liquid film LF2 of the rinsing liquid formed when the continuous flow of the rinsing liquid is discharged from the third discharge nozzle 43a. Therefore, by performing the removal process after the capping and immersion process, the amount of the rinsing liquid recovered to the fluid chamber 101 in the removal process can be reduced. Therefore, the concentration reduction of the second chemical solution (TMAH) can be suppressed.

[0217] In addition, according to this embodiment, the supply of the rinsing liquid is stopped during the removal process. Fig.11 As shown in (a) in FIG. 1 , during the removal process, the second discharge nozzle 42a can be moved from the second retreat position EP2 to the center position CP. As a result, the state where the upper surface of the substrate W is not covered by the liquid film (liquid film LF2 of the rinse liquid) can be changed to the state where the upper surface of the substrate W is covered by the liquid film (liquid film LF3 of the second chemical liquid) in a short time. That is, the time for the surface of the substrate W to be exposed to the atmosphere can be shortened. Therefore, the formation of a natural oxide film on the surface of the substrate W can be suppressed.

[0218] Furthermore, according to the present embodiment, since the first guard switching process is performed during the spinning immersion process, the amount of the rinse liquid recovered in the fluid chamber 101 can be reduced compared to the case where the first guard switching process is performed when the rinse liquid is supplied to the substrate W. As a result, the concentration of the second chemical solution (TMAH) can be suppressed from decreasing.

[0219] In the present embodiment, the fourth rotation speed is the same as the third rotation speed. That is, the control device 10 (control unit 11) maintains the rotation speed of the substrate W at the same rotation speed throughout the process from the removal process to the start of the second chemical liquid process.

[0220] In detail, the control device 10 (control unit 11) controls the substrate rotating unit 3 during the removal process so that the substrate W rotates at a rotation speed equal to the rotation speed of the substrate W at the start of the second liquid treatment. Therefore, when the removal process is changed to the second liquid treatment, it is not necessary to control the substrate rotating unit 3 to change the rotation speed. Therefore, compared with the case where the rotation speed is changed when the removal process is changed to the second liquid treatment, it is possible to change from a state where the upper surface of the substrate W is not covered with a liquid film (liquid film LF2 of the rinse liquid) to a state where the upper surface of the substrate W is covered with a liquid film (liquid film LF3 of the second liquid) in a short time. Therefore, the formation of a natural oxide film on the surface of the substrate W can be suppressed.

[0221] The control device 10 (control unit 11) performs the scanning process in response to the 5th set time that is predetermined to have passed since the start of the second liquid treatment. The 5th set time is set to be longer than the time required from the start of the discharge of the second liquid to the second liquid covering all the upper surface of the substrate W. In other words, the 5th set time is set to be longer than the time required to fill each recess 320 with the second liquid from the start of the discharge of the second liquid. The 5th set time is selected, for example, from a range of 3 seconds to 5 seconds.

[0222] In this embodiment, if Fig.13 As shown, the control device 10 (control unit 11) controls the second nozzle moving unit 52 to move the second discharge nozzle 42a between the center position CP and the first end relative position P1, and controls the second liquid medicine supply unit 42 to discharge the second liquid medicine (TMAH) from the second discharge nozzle 42a. That is, the control device 10 (control unit 11) performs the half scan process.

[0223] The control device 10 (control unit 11 ) controls the substrate rotating unit 3 during the scanning process so as to reduce the rotation speed of the substrate W when the second discharge nozzle 42 a is located at the first end relative position P1 .

[0224] Specifically, the control device 10 (control unit 11) rotates the substrate W at the fifth rotation speed when the second discharge nozzle 42a is located at the center position CP. In addition, the control device 10 (control unit 11) rotates the substrate W at the fifth rotation speed during the movement of the second discharge nozzle 42a. When the second discharge nozzle 42a reaches the first end relative position P1, the control device 10 (control unit 11) rotates the substrate W at the sixth rotation speed.

[0225] Here, the fifth rotation speed indicates a rotation speed lower than the fourth rotation speed (rotation speed of the substrate W at the start of the second chemical liquid treatment). The fifth rotation speed is, for example, 250 rpm. The sixth rotation speed indicates a rotation speed lower than the fifth rotation speed. The sixth rotation speed is, for example, 150 rpm.

[0226] According to this embodiment, during the scanning process, the substrate W is rotated at a rotation speed lower than the rotation speed at the start of supply of the second chemical solution. By slowing down the rotation speed of the substrate W, the temperature of the second chemical solution (TMAH) becomes less likely to drop.

[0227] According to the present embodiment, the rotation speed of the substrate W is reduced when the second discharge nozzle 42a is located at the first end relative position P1. Therefore, the amount of the second chemical solution discharged to the end E of the substrate W that scatters outside the substrate W can be reduced.

[0228] In addition, according to the present embodiment, the fourth rotation speed (rotation speed of the substrate W at the start of the second liquid treatment) indicates a rotation speed higher than the rotation speed during the scanning treatment. Therefore, at the start of the second liquid treatment, the upper surface of the substrate W can be quickly covered with the second liquid. As a result, after the removal treatment is completed, it is possible to change from a state where the upper surface of the substrate W is not covered with a liquid film (liquid film LF2 of the rinse liquid) to a state where the upper surface of the substrate W is covered with a liquid film (liquid film LF3 of the second liquid) in a short time. Therefore, the formation of a natural oxide film on the surface of the substrate W can be suppressed.

[0229] Furthermore, according to the present embodiment, the upper surface of the substrate W is quickly covered with the second chemical solution at the start of the second chemical solution treatment, so that the etching amount of the polysilicon layer 332 between the center portion and the end portion E of the substrate W is less likely to become uneven.

[0230] The control device 10 (control unit 11) executes the second rinsing process ( Figure 6 The second rinsing process is a process of controlling the substrate rotating unit 3 to rotate the substrate W while controlling the processing liquid supply unit 4 (rinsing liquid supply unit 43) to supply the rinsing liquid (second rinsing liquid) to the substrate W. The second rinsing process removes the second chemical solution from the substrate W.

[0231] Specifically, if Fig.14 As shown, the control device 10 (control unit 11) controls the second chemical liquid supply unit 42 to stop the supply of the second chemical liquid, and then controls the second nozzle moving unit 52 to move the second discharge nozzle 42a from the center position CP or the first end relative position P1 to the second retreat position EP2. In addition, the control device 10 (control unit 11) controls the substrate rotating unit 3 to rotate the substrate W at the seventh rotation speed. Then, the control device 10 (control unit 11) controls the rinse liquid supply unit 43 to discharge the rinse liquid from the third discharge nozzle 43a.

[0232] In this embodiment, the seventh rotation speed is a rotation speed greater than the fifth rotation speed and the sixth rotation speed. That is, after the second liquid treatment (scanning treatment) is completed, the control device 10 (control unit 11) controls the substrate rotating unit 3 to increase the rotation speed of the substrate W. The seventh rotation speed is, for example, 800 rpm.

[0233] When the rinsing liquid is supplied to the upper surface of the rotating substrate W through the second rinsing process, the second chemical liquid is washed away from the substrate W, thereby forming a liquid film LF2 of the rinsing liquid on the upper surface of the substrate W. Figure 8 Similarly to the first rinsing process described in (b) of FIG. 1 , the second chemical liquid is washed away from the substrate W by allowing the rinse liquid to enter each recess 320 and discharging the second chemical liquid from each recess 320 .

[0234] The second chemical solution and the rinse liquid discharged from the rotating substrate W in the second rinse process are blocked by the second guard 6 b (second guard 61 b ​​) and are recovered by the recovery unit 9 into the fluid chamber 101 .

[0235] The control device 10 (control unit 11) executes the second guard switching process in response to a predetermined time elapsed from the start of the second rinsing process. Fig.14 As shown, in this embodiment, the control device 10 (control unit 11) starts the second rinsing process, washes the second chemical solution from the substrate W, forms a liquid film LF2 of the rinsing solution on the upper surface of the substrate W, and then switches the guard part 6 surrounding the substrate W from the second guard part 6b to the third guard part 6c. Specifically, the control device 10 (control unit 11) controls the second lifting unit 72 to move the second guard part 6b to the downward position.

[0236] After the second guard switching process is performed, the rinse liquid discharged from the rotating substrate W is blocked by the third guard portion 6 c (third guard 61 c ). The rinse liquid blocked by the third guard portion 6 c is discharged to the drain tank 84 through the second drain portion 82 .

[0237] According to this embodiment, the amount of the rinse liquid recovered in the fluid chamber 101 can be reduced compared to the case where the second guard switching process is not performed. As a result, a decrease in the concentration of the second chemical solution (TMAH) can be suppressed.

[0238] After executing the second guard switching process, the control device 10 (control unit 11) controls the substrate rotating unit 3 to increase the rotation speed of the substrate W from the seventh rotation speed to the eighth rotation speed. For example, the control device 10 (control unit 11) gradually increases the rotation speed of the substrate W from 800 rpm to 1200 rpm.

[0239] It should be noted that, in the present embodiment, the rinsing liquid (second rinsing liquid) used in the second rinsing step (second rinsing treatment) is the same rinsing liquid (first rinsing liquid) as the rinsing liquid (first rinsing liquid) used in the first rinsing step (first rinsing treatment). However, the rinsing liquid (second rinsing liquid) used in the second rinsing step (second rinsing treatment) may be a rinsing liquid different from the rinsing liquid (first rinsing liquid) used in the first rinsing step (first rinsing treatment).

[0240] The control device 10 (control unit 11) executes the drying process ( Figure 6 The drying process includes controlling the substrate rotating unit 3 to increase the rotation speed of the substrate W to a ninth rotation speed to dry the substrate W. The ninth rotation speed is, for example, 2500 rpm.

[0241] Specifically, if Fig.15 As shown, the control device 10 (control unit 11) controls the rinsing liquid supply unit 43 to stop the supply of the rinsing liquid, and then controls the substrate rotating unit 3 to increase the rotation speed of the substrate W to the ninth rotation speed. As a result, a large centrifugal force is applied to the rinsing liquid on the substrate W, and the rinsing liquid attached to the substrate W is scattered around the substrate W. In this way, the rinsing liquid is removed from the substrate W and the substrate W is dried. The rinsing liquid scattered from the substrate W is blocked by the third guard part 6c (third guard 61c). The rinsing liquid blocked by the third guard part 6c is discharged to the drain tank 84 through the second drain part 82.

[0242] In response to the 8th predetermined set time having passed since the start of the drying process, the control device 10 (control unit 11) controls the substrate rotating unit 3 to stop the rotation of the substrate W. As a result, the drying process is completed. It should be noted that the 8th set time can be selected from a range of, for example, 20 seconds to 30 seconds.

[0243] The control device 10 (control unit 11) performs the substrate unloading process after the drying process is completed. Figure 6 Step S8), end Figure 6 Specifically, the control device 10 (control unit 11) controls the third lifting unit 73 to move the third protection member 6c to the lower position. In addition, the control device 10 (control unit 11) controls the substrate holding unit 2 to release the substrate W held by the substrate holding unit 2. Then, the control device 10 (control unit 11) controls the central robot CR to carry out the substrate W to the outside of the processing chamber 201.

[0244] According to the present embodiment, the control device 10 (control unit 11) controls the substrate rotating unit 3 to rotate the substrate W at a rotation speed (third rotation speed) lower than the rotation speed (ninth rotation speed) of the substrate W at the drying process during the removal process. Therefore, the substrate W is not dried by the removal process.

[0245] In addition, according to the present embodiment, during the removal process, the substrate W is rotated at a rotation speed that is closer to the rotation speed (the fourth rotation speed) of the substrate W at the start of the second liquid treatment than the rotation speed (the ninth rotation speed) of the substrate W during the drying process. Therefore, after the removal process, the rotation speed of the substrate W can be quickly adjusted to the rotation speed (the fourth rotation speed) at the start of the second liquid treatment. Therefore, the second liquid treatment can be started in a short time after the removal process.

[0246] According to the present embodiment, the execution time of the removal process (the fourth setting time) is shorter than the execution time of the drying process (the eighth setting time). Figure 6 The length of time of step S4) is longer than that of the drying step ( Figure 6 In other words, the control device 10 (control unit 11) performs the removal process in a shorter time than the drying process. Therefore, the substrate W will not be dried by the removal process. In addition, the second liquid treatment can be started in a short time after the first rinsing process (spinning immersion process) is completed.

[0247] Above, refer to Figure 1 to Figure 15 The embodiment of the present invention has been described. According to this embodiment, the rinse liquid that has entered the recess 320 can be removed from the substrate W without supplying IPA vapor or nitrogen gas. Therefore, the rinse liquid that has entered the recess 320 can be removed from the substrate W with a simpler configuration.

[0248] In addition, according to the present embodiment, even in the pattern PT having a high aspect ratio, the rinsing liquid can be removed from the recess 320 by the removal process. Therefore, even in the pattern PT having a high aspect ratio, the second liquid can be allowed to enter the recess 320 where no rinsing liquid remains. In other words, the rinsing liquid can be replaced with the second liquid from the opening to the deepest part of the recess 320 included in the pattern PT having a high aspect ratio. Therefore, even in the pattern PT having a high aspect ratio, the amount of depression of the depression 333 can be made substantially uniform from the opening to the deepest part of the recess 320.

[0249] In addition, depending on the pre-processing of the substrate W to be processed by the substrate processing apparatus 100, the amount of polysilicon at the end E of the substrate W may be greater than that at the center of the substrate W. In this case, if the etching amount of the polysilicon layer 332 is made substantially the same between the center and the end E of the substrate W, the dimension D3 of the polysilicon layer 332 in the plane direction after the etching process may become uneven between the center and the end E of the substrate W.

[0250] In contrast, according to the present embodiment, when the second discharge nozzle 42a is located at the first end relative position P1 during the scanning process, the rotation speed of the substrate W is reduced. Therefore, compared with the case where the rotation speed of the substrate W is not reduced when the second discharge nozzle 42a is located at the first end relative position P1, the amount of the second chemical solution (TMAH) discharged from the substrate W when the second discharge nozzle 42a is located at the first end relative position P1 can be reduced. Therefore, compared with the central portion of the substrate W, the etching amount of the end E of the substrate W can be increased. As a result, even when the amount of polysilicon at the end E of the substrate W is greater than that at the central portion of the substrate W, the size of the surface direction D3 of the polysilicon layer 332 after the etching process can be made substantially uniform between the central portion and the end E of the substrate W.

[0251] Furthermore, according to the present embodiment, by adjusting the second stop time, the etching amount at the end E of the substrate W can be adjusted. For example, by increasing the second stop time, the etching amount at the end E of the substrate W can be further increased.

[0252] It should be noted that the present invention is not limited to the above-mentioned embodiments, and can be implemented in various ways without departing from the scope of the present invention. In addition, the multiple components disclosed in the above-mentioned embodiments can be appropriately changed. For example, a certain component of all the components shown in one embodiment can be added to the components of another embodiment, or some components of all the components shown in one embodiment can be deleted from the embodiment.

[0253] In order to facilitate the understanding of the invention, the accompanying drawings mainly schematically illustrate the various constituent elements. For the convenience of drawing, the thickness, length, number, interval, etc. of the various constituent elements shown in the drawings are sometimes different from the actual ones. In addition, the composition of the various constituent elements shown in the above-mentioned embodiment is an example, and there is no particular limitation. Needless to say, various changes can be made within the scope of the effect of the present invention.

[0254] For example, in reference Figure 1 to Figure 15 In the described embodiment, the first chemical liquid is DHF and the second chemical liquid is TMAH, but the first chemical liquid and the second chemical liquid are not particularly limited as long as they are chemical liquids that can be used in different guard parts 6 .

[0255] In addition, in reference Figure 1 to Figure 15In the described embodiment, the substrate processing is an etching process, but the substrate processing is not particularly limited as long as it is a process for the substrate (substrate W) having the pattern PT including the recessed portion 320 .

[0256] In addition, in reference Figure 1 to Figure 15 In the described embodiment, the rotation of the substrate W is stopped during the spin immersion process, but the substrate W may be rotated at a rotation speed that does not discharge the rinse liquid from the substrate W. For example, the substrate W may be rotated at a rotation speed of 10 rpm during the spin immersion process.

[0257] In addition, in reference Figure 1 to Figure 15 In the embodiment described, the spinning immersion process is performed before the removal process, but the spinning immersion process may be omitted. In this case, when the rinsing liquid is supplied to the substrate W from the third discharge nozzle 43a, the guard part 6 surrounding the substrate W is switched from the first guard part 6a to the second guard part 6b.

[0258] In addition, in reference Figure 1 to Figure 15 In the described embodiment, one drain tank 84 is provided in the substrate processing apparatus 100, but the substrate processing apparatus 100 may also include two drain tanks 84. In this case, the first drain portion 81 may discharge the processing liquid collected in the first cup 62a to one drain tank 84, and the second drain portion 82 may discharge the processing liquid collected in the third cup 62c to the other drain tank 84. The substrate processing apparatus 100 may also include three or more drain tanks 84.

[0259] In addition, in reference Figure 1 to Figure 15 In the described embodiment, part of the processing liquid discharged from the substrate W flows into the drain tank 84 , but the drain unit 8 may flow part of the processing liquid discharged from the substrate W into a waste liquid line of a factory where the substrate processing apparatus 100 is installed.

[0260] In addition, in reference Figure 1 to Figure 15 In the embodiment described, only deionized water is used as the rinsing liquid (the first rinsing liquid and the second rinsing liquid), but in the first rinsing step ( Figure 6 Step S3) and the second rinsing step ( Figure 6 Different rinsing liquids can also be used in step S7).

[0261] In addition, in reference Figure 1 to Figure 15 In the described embodiment, the substrate processing apparatus 100 is illustrated as having three guard parts 6 (first to third guard parts 6a to 6c), but the substrate processing apparatus 100 may also have two guard parts 6 or four or more guard parts 6. That is, the substrate processing apparatus 100 only needs to have at least two guard parts 6.

[0262] In addition, in reference Figure 1 to Figure 15 In the described embodiment, a clamping chuck for clamping the substrate W is described as a structure for holding the substrate W, but the structure for holding the substrate W is not particularly limited as long as it can horizontally hold the substrate W. For example, a vacuum chuck may be used as a structure for holding the substrate W.

[0263] Industrial Applicability

[0264] The present invention is useful in methods and apparatus for processing substrates.

Claims

1. A substrate processing method, which is a substrate processing method for processing a substrate having a pattern including a concave portion, the substrate processing method comprising: a first chemical liquid step of supplying a first chemical liquid to the substrate; a rinsing step of supplying a first rinsing liquid to the substrate; a removing step of rotating the substrate while stopping the supply of the first rinse liquid, discharging the first rinse liquid from the recess, and removing the first rinse liquid from the substrate; and a second liquid step of supplying a second liquid to the substrate from which the first rinse liquid has been removed, wherein, in the first chemical liquid step, the first chemical liquid is supplied to the rotating substrate, and the first chemical liquid discharged from the substrate is blocked by a first protection member surrounding the substrate; In the rinsing step, the guard surrounding the substrate is switched from the first guard to the second guard, In the removing step, the first rinsing liquid discharged from the rotating substrate is blocked by the second guard. In the second chemical liquid step, the second chemical liquid is supplied to the rotating substrate, and the second chemical liquid discharged from the rotating substrate is blocked by the second guard.

2. The substrate processing method according to claim 1, wherein: The rinsing process comprises: a step of supplying the first rinsing liquid to the rotating substrate; and a spinning immersion step of maintaining a liquid film of the first rinse liquid on the substrate, In the spinning immersion step, the protector surrounding the substrate is switched from the first protector to the second protector.

3. The substrate processing method according to claim 1 or 2, wherein: In the removal step and the second chemical solution step, the first rinse solution and the second chemical solution blocked by the second guard are recovered.

4. The substrate processing method according to claim 1 or 2, wherein: In the removing step, the substrate is rotated at a rotation speed equal to a rotation speed of the substrate at the start of the second chemical solution step.

5. The substrate processing method according to claim 1 or 2, wherein: The rinsing step is a first rinsing step, The substrate processing method further comprises: a second rinsing step of supplying a second rinsing liquid to the rotating substrate to wash away the second chemical solution from the substrate; and a drying step of increasing the rotation speed of the substrate to dry the substrate, Here, in the removing step, the substrate is rotated at a rotation speed lower than a rotation speed at which the substrate is rotated in the drying step.

6. The substrate processing method according to claim 1 or 2, wherein: The rinsing step is a first rinsing step, The substrate processing method further comprises: a second rinsing step of supplying a second rinsing liquid to the rotating substrate to wash away the second chemical solution from the substrate; and a drying step of increasing the rotation speed of the substrate to dry the substrate, The duration of the removal step is shorter than the duration of the drying step.

7. The substrate processing method according to claim 1 or 2, wherein: The pattern includes a multi-layer stacked structure formed by alternating polysilicon layers and silicon oxide layers.

8. The substrate processing method according to claim 7, wherein: The multi-layered stacked structure includes a stacked structure having 80 layers or more.

9. The substrate processing method according to claim 7, wherein: The concave portion is recessed in the direction in which the polysilicon layer and the silicon oxide layer are alternately stacked, that is, in the stacking direction. The second chemical solution step includes a step of etching the polysilicon layer to form a concave portion on the inner side surface of the concave portion.

10. The substrate processing method according to claim 1 or 2, wherein: The first chemical solution includes an acidic chemical solution, The second chemical solution includes an alkaline chemical solution.

11. A substrate processing apparatus for processing a substrate having a pattern including a concave portion, the substrate processing apparatus comprising: a substrate holding portion for holding the substrate horizontally; a substrate rotating portion that rotates the substrate holding portion around a central axis extending in the vertical direction and rotates the substrate and the substrate holding portion integrally; a processing liquid supplying unit for supplying a processing liquid to the substrate; a plurality of protection members surrounding the substrate and blocking the processing liquid discharged from the substrate; a lifting unit for lifting and lowering the plurality of guards individually and switching the guard surrounding the substrate among the plurality of guards; and a control unit for controlling the substrate rotating unit, the processing liquid supply unit, and the lifting unit, Wherein, the treatment liquid includes a first liquid, a first rinse liquid and a second liquid. The plurality of protection members include a first protection member and a second protection member, The control unit performs the following processing: controlling the processing liquid supply unit to supply the first chemical liquid to the substrate for a first chemical liquid treatment; controlling the processing liquid supply unit to supply the first rinsing liquid to the substrate for rinsing; The substrate rotating unit is controlled to rotate the substrate while the processing liquid supply unit is controlled to stop supply of the first rinse liquid, thereby discharging the first rinse liquid from the recessed portion and removing the first rinse liquid from the substrate; controlling the processing liquid supply unit to supply the second chemical liquid to the substrate from which the first rinsing liquid has been removed; Controlling the substrate rotating unit to rotate the substrate during the first chemical solution treatment, the rinsing treatment, and the second chemical solution treatment; controlling the lifting unit so as to block the first chemical liquid discharged from the rotating substrate by the first protection member when the first chemical liquid treatment is performed; and During the rinsing process, the lifting part is controlled to switch the protection member surrounding the substrate from the first protection member to the second protection member, and during the removal process and the second liquid treatment, the second protection member is used to block the first rinsing liquid and the second liquid discharged from the rotating substrate.

12. The substrate processing apparatus according to claim 11, wherein: The rinsing process comprises: A process of controlling the substrate rotating unit to rotate the substrate and controlling the processing liquid supply unit to supply the first rinsing liquid to the rotating substrate; and a spinning immersion process of maintaining a liquid film of the first rinsing liquid on the substrate, The control unit controls the lifting unit to switch the protection member surrounding the substrate from the first protection member to the second protection member during the spinning immersion process. 13 . The substrate processing apparatus according to claim 11 , further comprising a recovery unit configured to recover the first rinse liquid and the second chemical solution blocked by the second guard.

14. The substrate processing apparatus according to claim 11 or 12, wherein: The control unit controls the substrate rotating unit to rotate the substrate at a rotation speed equal to a rotation speed of the substrate at the start of the second chemical liquid process during the removal process.

15. The substrate processing apparatus according to claim 11 or 12, wherein: The rinsing process is a first rinsing process, The control unit further performs the following processing: A second rinsing process of controlling the processing liquid supplying part to supply a second rinsing liquid to the substrate and wash the second chemical liquid off the substrate while controlling the substrate rotating part to rotate the substrate; and Controlling the substrate rotating unit to increase the rotation speed of the substrate to dry the substrate, The control unit controls the substrate rotating unit to rotate the substrate at a rotation speed lower than a rotation speed of the substrate during the drying process during the removal process.

16. The substrate processing apparatus according to claim 11 or 12, wherein: The rinsing process is a first rinsing process, The control unit further performs the following processing: A second rinsing process of controlling the processing liquid supplying part to supply a second rinsing liquid to the substrate and wash the second chemical liquid off the substrate while controlling the substrate rotating part to rotate the substrate; and Controlling the substrate rotating unit to increase the rotation speed of the substrate to dry the substrate, The control unit executes the removal process in a shorter time than the drying process.

17. The substrate processing apparatus according to claim 11 or 12, wherein: The pattern includes a multi-layer stacked structure formed by alternating polysilicon layers and silicon oxide layers.

18. The substrate processing apparatus according to claim 17, wherein: The multi-layered stacked structure includes a stacked structure having 80 layers or more.

19. The substrate processing apparatus according to claim 17, wherein: The concave portion is recessed in the direction in which the polysilicon layer and the silicon oxide layer are alternately stacked, that is, in the stacking direction. The control unit etches the polysilicon layer through the second chemical solution treatment to form a concave portion on an inner side surface of the concave portion.

20. The substrate processing apparatus according to claim 11 or 12, wherein: The first chemical solution includes an acidic chemical solution, The second chemical solution includes an alkaline chemical solution.

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