Super junction IGBT device
By not setting a doping region of the first doping type in the second body region of the super junction IGBT device, the thyristor structure with an NPNP structure is avoided, and the problem of weak latch resistance of traditional super junction IGBT devices is solved, and the problem of weak latch resistance of traditional super junction IGBT devices is realized Stronger latch resistance and normal shutdown function.
Patent Information
- Application Number
- CN202411597957.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-11
- Publication Date
- 2025-02-21
AI Technical Summary
Traditional super junction IGBT devices are affected by bipolar conductivity when shut down, resulting in uneven internal current distribution and weak latch resistance, which limits their promotion and application.
By not providing any first doping region of the doping type in the second body region above the second doping type column region, the formation of a thyristor structure of the NPNP structure is avoided, thereby enhancing the latch resistance.
It effectively improves the latch resistance of the super junction IGBT device when it is turned off, avoids the occurrence of latch effect, and ensures that the device can be turned off normally.
Smart Images
Figure CN119497405A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular, to a super junction IGBT device. Background Art
[0002] Latch-Up: The latch-up effect refers to the phenomenon that during the operation of the IGBT device, the parasitic bipolar transistor (BJT) in the internal structure is accidentally triggered, causing the device to lose control of the gate, enter an uncontrollable conduction state, and even be unable to shut down. This effect can cause excessive current to the device, which may cause serious damage. Specifically, there is a NPNP four-layer structure in the IGBT structure, which can be regarded as a parasitic thyristor (SCR). When the device is in a high current and high voltage state, or when it is locally overheated, the parasitic thyristor (SCR) may be triggered, causing the device to jump from the normal working state to the latched state. Once the latch-up effect occurs, the gate voltage fails, and the IGBT device will not be able to be turned off by normal control means, which may cause device damage.
[0003] Superjunction IGBT bipolar conduction effect: In the superjunction IGBT, the high doping of the N column and the P column changes the bipolar conduction ratio in the drift region. When the device is switched, the hole current density of the P column in the superjunction region is higher than that of the N column, while the electron current density of the N column is higher than that of the P column. It is this unique current distribution characteristic that enables the superjunction IGBT to have a faster switching speed.
[0004] Insulated Gate Bipolar Transistor (IGBT) is a widely used semiconductor power device. It has the advantages of high input impedance and simple driving of MOSFET, as well as the advantages of high current density and low on-state voltage drop of BJT device. Super junction is a voltage-resistant structure with alternating N-column and P-column regions, which can make N-column and P-column regions still have a high breakdown voltage under high doping concentration.
[0005] With the further development of technology in recent years, IGBT structure and technology are getting closer and closer to their theoretical limits; superjunction IGBT with superjunction drift region combines the advantages of FS-IGBT and superjunction, can achieve high withstand voltage and low loss, and provide a new direction for further improvement of IGBT performance. With the evolution of superjunction IGBT technology, the current density continues to increase. When the superjunction IGBT device is turned off, it is affected by the bipolar conduction effect (hole current density P column>N column, electron current density N column>P column), resulting in uneven internal current distribution, which weakens the device's anti-latch capability and hinders the promotion and application of superjunction IGBT. Therefore, in order to meet the requirements of modern power electronic devices, it is urgent to design a superjunction IGBT structure with strong anti-latch capability.
[0006] Traditional SJ-IGBT devices, such as Figure 1 As shown, metal emitter region 1-1, isolation oxide 1-2, N+ region 1-3, P-body region 1-4, trench polysilicon gate region 1-51, trench gate oxide layer 1-52, super junction P column region 1-6, super junction N column region 1-7, transition region 1-8, N+ substrate cut-off region 1-9, P+ collector region 1-10. When the conventional super junction IGBT device is turned off, it is affected by the bipolar conduction effect, and most of the holes generated by the P+ collector region 1-10 flow out through the super junction P column region 1-6 and through the lead hole above the super junction P column region 1-6. This leads to a significant increase in the hole current density in the P-body region 1-4 above the super junction P column region 1-6, and the resulting voltage drop makes it easy for the parasitic thyristor inside the device to turn on, resulting in a weakened anti-latch capability of the device. That is, when it is turned off, it is affected by the bipolar conduction effect (when it is turned off, the hole current density in the superjunction P column region is greater than the superjunction N column region, and the electron current density in the superjunction N column region is greater than the superjunction P column region), resulting in uneven internal current distribution, thereby weakening the device's anti-latch capability.
[0007] Therefore, the traditional super junction IGBT device has a weak anti-latch capability, which is a technical problem that technical personnel in this field urgently need to solve.
[0008] The above information disclosed in the background section is only for enhancing understanding of the background of the present application and therefore it may contain information that does not form the prior art known to a person of ordinary skill in the art. Summary of the invention
[0009] The embodiment of the present application provides a super junction IGBT device to solve the technical problem that the traditional super junction IGBT device has a weak anti-latch capability.
[0010] The embodiment of the present application provides a super junction IGBT device, including:
[0011] a substrate of a first doping type and an epitaxial layer of the first doping type formed on the substrate;
[0012] A plurality of second doping type column regions of a second doping type are arranged in a lateral direction in the epitaxial layer at intervals;
[0013] A plurality of trench gates, each of which is formed downward from the upper surface of the epitaxial layer, and each of which is spaced apart in a lateral direction in the epitaxial layer;
[0014] A plurality of body regions of the second doping type are formed downward from the upper surface of the epitaxial layer between adjacent trench gates; the body region above the second doping type column region and opposite to the second doping type column region is the second body region, and the body region staggered from the second doping type column region is the first body region;
[0015] An emitter of a first doping type is formed downward from the upper surface of each of the first body regions, and the emitter is only arranged in the first body region;
[0016] A collector region of a second doping type is formed on the back side of the substrate.
[0017] The embodiment of the present application adopts the above technical solution, which has the following technical effects:
[0018] The super junction IGBT device of the embodiment of the present application is designed based on the bipolar conductive characteristics of the super junction IGBT device when it is turned off. The super junction IGBT device of the present application avoids forming a thyristor structure of an NPNP structure above and below the second doping type column region 8 by not setting any doping region of the first doping type in the second body region 6-2 located above the second doping type column region 8, so that latching will not be triggered, making the anti-latch capability above the second doping type column region stronger, thereby making the anti-latch capability of the super junction IGBT device of the present application stronger. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:
[0020] Figure 1 Schematic diagram of a conventional super junction IGBT device;
[0021] Figure 2 A schematic diagram of a first implementation of a super junction IGBT device of the present application;
[0022] Figure 3 A schematic diagram of a second implementation of a super junction IGBT device of the present application;
[0023] Figure 4 A schematic diagram of a third implementation of the super junction IGBT device of the present application;
[0024] Figure 5 A schematic diagram of a fourth implementation of the super junction IGBT device of the present application;
[0025] Figure 6-1 Lab test graph of collector current and collector voltage graph (full waveform) for testing latch-up failure for a conventional superjunction IGBT device;
[0026] Figure 6-2 for Figure 6-1 A partial enlarged view of the laboratory test image at the dotted box position;
[0027] Figure 7-1 A laboratory test diagram of the collector current and collector voltage diagram (complete waveform) for testing latch failure of the super junction IGBT device of the present application;
[0028] Figure 7-2 for Figure 7-1 A partial enlarged view of the laboratory test chart at the dotted box position.
[0029] Reference numerals:
[0030] In the background technology:
[0031] Metal emitter region 1-1, isolation oxygen 1-2, N+ region 1-3, P-body region 1-4,
[0032] Trench polysilicon gate region 1-51, trench gate oxide layer 1-52, super junction P column region 1-6,
[0033] Super junction N column area 1-7, transition area 1-8,
[0034] N+ substrate cut-off region 1-9, P+ collector region 1-10;
[0035] In this application:
[0036] Metal emitter layer 1, isolation layer 2, first lead hole 3-1, second lead hole 3-2, emitter 4,
[0037] A first short-circuit region 5-1, a second short-circuit region 5-2, a first body region 6-1, a second body region 6-2,
[0038] Gate 7-1, gate oxide layer 7-2, second doping type column region 8, first doping type column region 9,
[0039] Transition region 10 , substrate 11 , collector region 12 . DETAILED DESCRIPTION
[0040] In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than an exhaustive list of all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.
[0041] Embodiment 1
[0042] like Figure 2 , Figure 3 , Figure 4 , Figure 5 As shown, the super junction IGBT device of the present application includes:
[0043] A substrate 11 of a first doping type and an epitaxial layer of the first doping type formed on the substrate;
[0044] A plurality of second doping type column regions 8 of a second doping type are arranged in a lateral direction in the epitaxial layer at intervals;
[0045] A plurality of trench gates, each of which is formed downward from the upper surface of the epitaxial layer, and each of which is spaced apart in a lateral direction in the epitaxial layer;
[0046] A plurality of second doping type body regions are formed downward from the upper surface of the epitaxial layer between adjacent trench gates; the body region above the second doping type column region 8 and opposite to the second doping type column region 8 is the second body region 6-2, and the body region staggered from the second doping type column region 8 is the first body region 6-1;
[0047] An emitter 4 of the first doping type is formed downward from the upper surface of each of the first body regions 6-1, and the emitter 4 is only arranged in the first body region 6-1 and not arranged in the second body region 6-2, so that no doping region of the first doping type is arranged in the second body region 6-2;
[0048] A collector region 12 of the second doping type is formed on the back side of the substrate 11 .
[0049] Specifically, as a first implementation, the first doping type is N-type doping, and the second doping type is P-type doping. As a second implementation, the first doping type is P-type doping, and the second doping type is N-type doping.
[0050] The super junction IGBT device of the embodiment of the present application is designed based on the bipolar conductive characteristics of the super junction IGBT device when it is turned off.
[0051] The present application is described below with the first doping type being N-type doping and the second doping type being P-type doping:
[0052] No doping region of the first doping type (N-type doping) is arranged in the second body region 6-2 of the second doping type (P-type doping). In this way, the second body region 6-2 of the second doping type (P-type doping), the epitaxial layer of the first doping type (N-type doping), and the collector region 12 of the second doping type (P-type doping) form a PNP structure. Thus, the formation of a thyristor structure of an NPNP structure is avoided.
[0053] The present application is described below with the first doping type being P-type doping and the second doping type being N-type doping:
[0054] No doping region of the first doping type (P-type doping) is arranged in the second body region 6-2 of the second doping type (N-type doping). In this way, the second body region 6-2 of the second doping type (N-type doping), the epitaxial layer of the first doping type (P-type doping), and the collector region 12 of the second doping type (N-type doping) form an NPN structure. Thus, the formation of a thyristor structure of a PNPN structure is avoided.
[0055] Therefore, the super junction IGBT device of the present application avoids the formation of a thyristor structure with an NPNP structure above and below the second doping type column region 8 by not setting any first doping type doping region in the second body region 6-2 located above the second doping type column region 8, thereby not triggering latching, making the anti-latch capability above the second doping type column region stronger, thereby making the super junction IGBT device of the present application have a stronger anti-latch capability.
[0056] In implementation, such as Figure 2 , Figure 3 , Figure 4 , Figure 5 As shown, the super junction IGBT device also includes:
[0057] A second lead hole 3-2, the lower end of which enters into the second body region 6-2;
[0058] A first lead hole 3-1, the lower end of which passes through the emitter 4 and enters the first body region 6-1;
[0059] When the super junction IGBT device is turned off, most of the holes form a hole current from the collector region 12, through the second doping type column region 8, the second body region 6-2, and the second lead hole 3-2 ( Figure 2 In the figure, the dotted line with an upward arrow indicates the flow direction of the hole current. That is, because the thyristor structure of the NPNP structure is not formed, the hole current formed by most holes will flow out from the second lead hole 3-2, and the hole current density above the second doping type column region 9 is small, so latch-up will not be triggered, so that the anti-latch capability above the second doping type column region 9 is reduced.
[0060] When the super junction IGBT device is turned off, electrons form an electron current ( Figure 2 The dotted line with the downward arrow indicates the flow direction of the hole current); the area in the epitaxial layer that is alternately arranged with the second doping type column area 8 is used as the first doping type column area 9.
[0061] When the super junction IGBT device is turned off, the hole current is large and the electron current is small. The super junction IGBT device of the present application is mainly aimed at improving the anti-latch capability when the hole current of the super junction IGBT device is large when it is turned off.
[0062] As an optional implementation, Figure 2 As shown, the width K of the second doping type column region 8 is greater than or equal to the width L of the body region;
[0063] One second doping type column region 8 is opposite to only one body region, and a width W of an opposing region between the second doping type column region 8 and the body region opposite thereto is equal to 100% of a width L of the body region (ie, they are directly opposite).
[0064] In this case, a body region is either 100% opposite to a second doping type column region 8 in width, or is not opposite to the second doping type column region 8 in width at all.
[0065] Figure 2 In the embodiment, not only the above characteristics are met, but also the center line of a second doping type column region 8 coincides with the center line of the body region opposite thereto.
[0066] When the super junction IGBT device is turned off, most of the holes form a hole current from the collector region 12, through the second doping type column region 8, the second body region 6-2, and the second lead hole 3-2 ( Figure 2 In the process of (the direction of hole current is indicated by the dotted line with an upward arrow), the area directly opposite to the second doping type column region 8 and the second body region 6-2 can be more fully utilized, so that the anti-latch capability above the second doping type column region is stronger.
[0067] As an optional implementation, Figure 2 , Figure 3 , Figure 4 , Figure 5 As shown, the width of the second doping type column region 8 is greater than or equal to the width of the body region;
[0068] As an implementable manner, the width W of a region where a column region 8 of the second doping type faces at least one body region is equal to 100% of the width L of the body region (ie, directly facing).
[0069] like Figure 2 , Figure 3 , Figure 4 , Figure 5 As shown, when the width W of the region where a single body region and the second doping type column region 8 are opposite to each other is greater than or equal to 50% of the width L of the body region, the body region is a second body region;
[0070] The width W of a region where a single body region and the second doping type column region 8 are opposite to each other is smaller than 50% of the width L of the body region, and the body region is a first body region.
[0071] When turned off, the hole current density in the middle of each second doping type column region 8 is the largest. When the width W of the region where a single body region and the second doping type column region 8 are opposite is greater than or equal to 50% of the width L of the body region, there are still many holes that form a hole current from the collector region 12, through the second doping type column region 8, the locally opposite second body region 6-2, and the second lead hole 3-2.
[0072] The width W of the region relative to the single body region and the second doping type column region 8 is less than 50% of the width L of the body region, and more hole current will flow out along the first body region 6-1, making the anti-latch capability above the first body region 6-1 weaker. However, since the super junction IGBT device of the present application already has more second body regions 6-2, the anti-latch capability of the entire device is already very strong.
[0073] Figure 2 and Figure 4 In the embodiment, one of the second doping type column regions 8 is opposite to only one of the body regions, and the width W of the second doping type column region 8 and the body region opposite thereto is equal to 100% of the width L of the body region (i.e., directly opposite). Correspondingly, the body region directly opposite to the second doping type column region 8 is the second body region 6-2.
[0074] Figure 3 In the embodiment, one second doping type column region 8 is opposite to two body regions, and the width W of the second doping type column region 8 and the two body regions opposite thereto is equal to 100% of the width L of the body region (i.e., directly opposite). That is, one second doping type column region 8 is directly opposite to two body regions. Correspondingly, the body region directly opposite to the second doping type column region is the second body region 6-2.
[0075] Figure 5 In the embodiment, one of the second doping type column regions 8 is opposite to the two body regions, and the width W of the second doping type column region 8 and the region opposite to one body region is equal to 100% of the width L of the body region (i.e., directly opposite), and the width W of the region opposite to the other body region is less than 100% of the width L of the body region (i.e., not directly opposite). That is, one of the second doping type column regions 8 is directly opposite to a body region (the corresponding body region is the second body region 6-2), and is not directly opposite to the other body region (it is necessary to determine whether it is the second body region or the first body region based on the relationship between the width W of the relative region and the width L of the body region).
[0076] Figures 2 to 5In the structure of the super junction IGBT device, the larger the relative area between the second doping type column region 8 and the second body region 6-2, and the smaller the relative area between the second doping type column region 8 and the first body region 6-1, the stronger the anti-latch capability of the super junction IGBT device. Since the larger the relative area between the second doping type column region 8 and the second body region 6-2, the smaller the emitter 4, and thus the number of effective channels, the conduction performance of the super junction IGBT device deteriorates.
[0077] Therefore, the super junction IGBT device of the present application is selected Figures 2 to 5 When selecting the structure type, it is necessary to comprehensively consider the anti-latch capability, conduction characteristics and voltage resistance characteristics.
[0078] In implementation, such as Figure 3 , Figure 4 , Figure 5 As shown, the super junction IGBT device also includes:
[0079] A plurality of first short-circuit regions 5-1 of the second doping type, the bottom end of each of the first lead holes 3-1 is connected to a first short-circuit region 5-1, and is located in the first body region 6-1; wherein the doping concentration of the first short-circuit region 5-1 is greater than the doping concentration of the body region, and the doping concentration of the first short-circuit region 5-1 ranges from greater than or equal to 10 14 cm -3 Less than or equal to 10 16 cm -3 ;
[0080] The first short-circuit region 5-1 connects the first lead hole 3-1 and the first body region 6-1; the emitter 4, the first short-circuit region 5-1 and the first body region 6-1, the epitaxial layer, and the collector region 12 form a PNP structure.
[0081] Although the emitter 4, the first short-circuit region 5-1, the first body region 6-1, the epitaxial layer, and the collector region 12 form an NPNP structure, the first short-circuit region 5-1 shorts the emitter 4, so that the NPN structure formed by the emitter 4, the first short-circuit region 5-1, the first body region 6-1, and the epitaxial layer cannot be turned on. The first short-circuit region 5-1, the first body region 6-1, the epitaxial layer, and the collector region 12 form a PNP structure.
[0082] When the super junction IGBT device is turned off, a small amount of holes form a hole current from the collector region 12, through the second doping type column region 8, the first body region 6-1, the first short-circuit region 5-1, and the first lead hole 3-1. That is, the hole current generated by a small amount of holes flows out through the second doping type column region 8, the first body region 6-1, the first short-circuit region 5-1, and the first lead hole 3-1, and the hole current density above the first doping type column region is small, so latch-up will not be triggered, and the anti-latch capability above the first doping type column region is high.
[0083] Electrons form an electron current from the emitter 4, through the first short-circuit region 5-1, the first body region 6-1, the first doping type column region 9, and the collector region 12 ( Figure 2 The dotted line with the downward arrow indicates the flow direction of the hole current); the area in the epitaxial layer that is alternately arranged with the second doping type column area 8 is used as the first doping type column area 9.
[0084] In implementation, such as Figure 3 , Figure 4 As shown, the super junction IGBT device also includes:
[0085] A plurality of second short-circuit regions 5 - 2 of the second doping type, the bottom end of each of the second lead holes 3 - 2 is connected to one of the first short-circuit regions 5 - 2 and is located in the second body region 6 - 2.
[0086] The second short-circuit region 5-2 and the first short-circuit region 5-1 are formed by one process, so that a mask can be saved. The first short-circuit region 5-1 substantially helps improve the anti-latch capability of the super junction IGBT device, while the second short-circuit region 5-2 does not substantially help the anti-latch capability of the super junction IGBT device. The purpose of setting the second short-circuit region 5-2 is to save masks and simplify the process.
[0087] In implementation, such as Figure 2 , Figure 3 , Figure 4 , Figure 5 As shown, the super junction IGBT device also includes:
[0088] An isolation layer 2, formed on the epitaxial layer;
[0089] A metal emitter layer 1, formed on the isolation layer;
[0090] The second lead hole 3-2 penetrates the isolation layer 2 and is connected to the metal emitter layer 1, and the first lead hole 3-1 penetrates the isolation layer 2 and is connected to the metal emitter layer 1;
[0091] The trench gate includes a trench-type gate oxide layer 7-2 and a gate electrode 7-1, and the gate electrode 7-1 is filled in the space surrounded by the bottom and inner wall of the gate oxide layer 7-2.
[0092] In implementation, a portion of the epitaxial layer between the substrate 11 and the second doping type column region 8 serves as a transition region 10 .
[0093] Specifically, the present invention adopts lead hole silicon etching and high energy (energy ≥ 150KeV, doping concentration range 10 14 cm -3 Less than or equal to 10 16 cm -3 ) implantation process improves the anti-latch capability of the cell above the second doping type column region 8. In this way, the present application not only retains the fast switching performance of the super junction IGBT, but also enhances the anti-latch capability of the device.
[0094] The structure of the present invention forms a second doping type column region 8 and a first doping type column region 9 on an N+ substrate 11 by implantation epitaxy or trenching epitaxy. The second doping type column region 8 and the first doping type column region 9 are alternately arranged and perpendicular to the surface of the N+ substrate 11.
[0095] A gate oxide layer 7-2 is formed by trenching and oxidation above the super junction region, and a gate 7-1 of polysilicon is formed by deposition, which together constitute a trench gate. A body region (a first body region 6-1 and a second body region 6-2) is formed by injection diffusion. An emitter 4 is formed by injection above the first body region 6-1, and an isolation layer 2 is formed by deposition above the emitter 4.
[0096] Etching the isolation layer and silicon in the body region through a mask to form a first lead hole 3-1 and a second lead hole 3-2;
[0097] High energy ion implantation (energy ≥ 150 KeV, doping concentration range of ≥ 10 14 cm -3 Less than or equal to 10 16 cm -3 ) a first short-circuit region 5-1 and a second short-circuit region 5-2 formed under the first lead hole 3-1 and the second lead hole 3-2;
[0098] Finally, a metal emitter layer 1 is formed by deposition, and the metal emitter layer 1 is connected to the emitter 4, the first body region 6-1, the second body region 6-2, the first short-circuit region 5-1, and the second short-circuit region 5-2 through the first lead hole 3-1 and the second lead hole 3-2. Finally, the back collector region 12 is formed by injection.
[0099] The super junction IGBT device of the present invention has a stronger anti-latch capability, which makes it have great application value in the field of high density and high current, and its excellent anti-latch performance has been verified by simulation and experiment. When the super junction IGBT device is turned off, a large number of unbalanced carriers stored in the first doping type column area 9 are rapidly extracted from the device under the influence of the electric field, causing the current to drop rapidly. Due to the bipolar effect of the super junction IGBT, when the device is turned off, the hole current formed by the unbalanced carriers stored in the first doping type column area 9 mainly flows through the super junction P column area, and then flows out from the second lead hole 3-2 above. The hole current generated when the device is turned off passes through the second body area 6-2 above the second doping type column area 8, which will produce a voltage drop. The second body area 6-2 of the second doping type (N-type doping), the epitaxial layer of the first doping type (P-type doping), and the collector area 12 of the second doping type (N-type doping) form an NPN structure. Thereby avoiding the formation of a thyristor structure of a PNPN structure.
[0100] In summary, the super junction IGBT device of the present application can ensure the high performance of the super junction IGBT and enhance the anti-latch capability of the device. The super junction IGBT device can be used for all super junction IGBT devices, and the substrate material can be Si or other semiconductor materials such as SiC.
[0101] Figure 6-1 Lab test graph of collector current and collector voltage graph (full waveform) for testing latch-up failure for a conventional superjunction IGBT device; Figure 6-2 for Figure 6-1 A partial enlarged view of the laboratory test image at the dotted box position. Figure 6-1 The dotted box position is the shutdown moment. Figure 6-1 and Figure 6-2 A latch-up test was performed on a conventional superjunction IGBT device with a specification of 650V / 75A and a collector current of 225A before turn-off. Figure 6-1 and Figure 6-2 The horizontal axis is time, in seconds; the vertical axis on the left is the collector voltage, in volts; the vertical axis on the right is the collector current, in amperes; the solid line curve is the curve of the collector current changing with time, and the dotted line curve is the curve of the collector voltage changing with time.
[0102] like Figure 6-2 As shown, at the turn-off moment, the collector current of the solid line curve still does not drop to 0A at the turn-off moment, the device cannot be turned off, and the collector current does not drop to 0A, while the collector voltage of the dotted line curve drops to 0V at the turn-off moment, the gate voltage shutdown fails, and the traditional super junction IGBT device cannot be turned off by normal control means.
[0103] Figure 7-1A laboratory test diagram of the collector current and collector voltage diagram (complete waveform) for testing latch failure of the super junction IGBT device of the present application; Figure 7-2 for Figure 7-1 A partial enlarged view of the laboratory test image at the dotted box position. Figure 7-1 The dotted box position is the shutdown moment. Figure 7-1 and Figure 7-2 A latch-up test was performed on the super junction IGBT device of the present application with a specification of 650V / 75A and a collector current of 450A before shutdown. Figure 7-1 and Figure 7-2 The horizontal axis is time, in seconds; the vertical axis on the left is the collector voltage, in volts; the vertical axis on the right is the collector current, in amperes; the solid line curve is the curve of the collector current changing with time, and the dotted line curve is the curve of the collector voltage changing with time.
[0104] like Figure 7-2 As shown, at the turn-off moment, the collector voltage of the dotted curve rises and then stabilizes at the bus voltage, the collector current of the solid curve drops to 0A, the gate voltage is turned off successfully, and the super junction IGBT device of the present application can be turned off by normal control means.
[0105] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented in one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that include computer-usable program code.
[0106] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.
[0107] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.
[0108] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.
[0109] Although the preferred embodiments of the present application have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present application.
[0110] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.
Claims
1. A super junction IGBT device, characterized in that: include: A substrate (11) of a first doping type and an epitaxial layer of the first doping type formed on the substrate; A plurality of second doping type column regions (8) of a second doping type are arranged in a lateral direction in the epitaxial layer at intervals; A plurality of trench gates, each of which is formed downward from the upper surface of the epitaxial layer, and each of which is spaced apart in a lateral direction in the epitaxial layer; A plurality of second doping type body regions are formed downward from the upper surface of the epitaxial layer between adjacent trench gates; the body region opposite to the second doping type column region (8) is the second body region (6-2), and the body region staggered from the second doping type column region (8) is the first body region (6-1); An emitter (4) of a first doping type is formed downward from the upper surface of each of the first body regions (6-1), and the emitter (4) is only arranged in the first body region (6-1); A collector region (12) of a second doping type is formed on the back side of the substrate (11).
2. The super junction IGBT device according to claim 1, characterized in that: Also includes: A second lead hole (3-2), the lower end of which enters into the second body region (6-2); A first lead hole (3-1), the lower end of which passes through the emitter (4) and enters the first body region (6-1).
3. The super junction IGBT device according to claim 2, characterized in that: The width K of the second doping type column region (8) is greater than or equal to the width L of the body region; One second doping type column region (8) is opposite to only one body region, and a width W of an opposing region between the second doping type column region (8) and the body region opposite thereto is equal to 100% of a width L of the body region.
4. The super junction IGBT device according to claim 3, characterized in that: The center line of the second doping type column region (8) coincides with the center line of the body region opposite thereto.
5. The super junction IGBT device according to claim 2, characterized in that: The width K of the second doping type column region (8) is greater than or equal to the width L of the body region; A width W of a region between a second doping type column region (8) and at least one body region relative to each other is equal to 100% of a width L of the body region.
6. The super junction IGBT device according to any one of claims 3 to 5, characterized in that: When the width W of the region where a single body region and the second doping type column region (8) are opposite to each other is greater than or equal to 50% of the width L of the body region, the body region is a second body region; The body region other than the second body region (6-2) is the first body region.
7. The super junction IGBT device according to claim 6, characterized in that: Also includes: A plurality of first short-circuit regions (5-1) of a second doping type, wherein the bottom end of each of the first lead holes (3-1) is connected to a first short-circuit region (5-1) and is located in the first body region (6-1); wherein the doping concentration of the first short-circuit region (5-1) is greater than the doping concentration of the body region, and the doping concentration of the first short-circuit region (5-1) is in a range of greater than or equal to 10 14 cm -3 Less than or equal to 10 16 cm -3 ; The first short-circuit region (5-1) connects the first lead hole (3-1) and the first body region (6-1); the first short-circuit region (5-1), the first body region (6-1), the epitaxial layer, and the collector region (12) form a PNP structure.
8. The super junction IGBT device according to claim 7, characterized in that: When the super junction IGBT device is turned off, a small amount of holes form a hole current from the collector region (12), through the second doping type column region (8), the first body region (6-1), the first short-circuit region (5-1), and the first lead hole (3-1).
9. The super junction IGBT device according to claim 7, characterized in that: Also includes: A plurality of second short-circuit regions (5-2) of a second doping type, the bottom end of each of the second lead holes (3-2) being connected to one of the first short-circuit regions (5-2) and being located in the second body region (6-2).
10. The super junction IGBT device according to claim 7, characterized in that: Also includes: An isolation layer (2) formed on the epitaxial layer; A metal emitter layer (1) formed on the isolation layer; The second lead hole (3-2) penetrates the isolation layer (2) and is connected to the metal emitter layer (1), and the first lead hole (3-1) penetrates the isolation layer (2) and is connected to the metal emitter layer (1); The trench gate comprises a trench-type gate oxide layer (7-2) and a gate electrode (7-1), wherein the gate electrode (7-1) is filled in a space enclosed by the bottom and inner wall of the gate oxide layer (7-2); The position in the epitaxial layer between the substrate (11) and the second doping type column region (8) serves as a transition region (10).