Method and apparatus for processing through holes in laser modified glass substrates

Abstract

The application provides a laser-based glass substrate via processing method and device, and applies to the technical field of laser processing, and comprises the following steps: a target horizontal axis center surface of a determined Bessel beam non-diffraction propagation length target horizontal axis center is overlapped with a thickness center surface of a glass substrate to be processed, and then modification processing is performed on the glass substrate to be processed, so that when the non-diffraction propagation length non-target horizontal axis center surface is overlapped with the thickness center surface of the glass substrate to be processed, the problem of non-uniform modification on the upper and lower sides of the thickness center surface of the glass substrate to be processed caused by different beam diameters and energy intensities on the two sides of the non-diffraction propagation length non-target horizontal axis center surface is avoided, so that the obtained glass substrate is uniformly modified around the upper and lower parts of the thickness center surface, and the quality of subsequent etching of the via is improved.

Description

Technical Field

[0001] This disclosure relates to the field of laser processing technology, and more particularly to the field of glass substrate through-hole fabrication technology. Background Technology

[0002] Glass substrates are a common material with good optical transparency and mechanical strength. Through-glass vias (TGVs) are vertical channels precisely machined into glass substrates, widely used in integrated circuits and microelectronic packaging for electrical connections and heat dissipation. Bessel beams, due to their long depth of focus and lack of diffraction, are used in the fabrication of through-glass vias.

[0003] However, as Figure 1 The schematic diagram of the Bessel beam shown illustrates that the Bessel beam has the characteristic of propagating in a conical shape around both sides of a central plane. Existing methods for laser refining using the Bessel beam do not take into account the aforementioned characteristic of the Bessel beam propagating in a conical shape around both sides of a central plane, resulting in uneven refining of the glass substrate through-holes. Summary of the Invention

[0004] In view of this, the present disclosure provides a method and apparatus for processing through holes in a laser-modified glass substrate, which at least partially solves the problems existing in the prior art.

[0005] In a first aspect, embodiments of this disclosure provide a method for processing through-holes in a laser-modified glass substrate, including:

[0006] Determine the target transverse axis center plane, which is the center of the target transverse axis and the non-diffraction propagation length of the target Bessel beam;

[0007] The center plane of the target transverse axis, which is the center of the target Bessel beam's non-diffraction propagation length, is aligned with the center plane of the thickness of the glass substrate to be processed.

[0008] The target horizontal axis center plane is controlled to coincide with the thickness center plane of the glass substrate to be processed, and the glass substrate to be processed is subjected to a modification treatment.

[0009] Optionally, aligning the target transverse axis center plane, which is the center of the target Bessel beam's non-diffraction propagation length, with the thickness center plane of the glass substrate to be processed includes:

[0010] The target transverse axis center plane of the target Bessel beam non-diffraction propagation length target transverse axis center is aligned with the surface of the glass substrate to be processed.

[0011] After aligning the target transverse axis center plane with the surface to be processed on the glass substrate, the glass substrate to be processed is then moved by 1 / 2 the thickness of the glass substrate to be processed in the direction of emission of the target Bessel beam, so that the target transverse axis center plane of the target Bessel beam without diffraction propagation length coincides with the thickness center plane of the glass substrate to be processed.

[0012] Optionally, aligning the target transverse axis center plane, which is the center of the target Bessel beam's non-diffraction propagation length, with the surface of the glass substrate to be processed includes:

[0013] Determine the relative transverse axis center position of the target Bessel beam's diffraction-free propagation length:

[0014] Adjust the position of the surface to be processed on the glass substrate to be processed so that the surface to be processed on the glass substrate to be processed initially coincides with the relative transverse axis center plane of the relative transverse axis center of the non-diffraction propagation length of the target Bessel beam.

[0015] The glass substrate to be processed is controlled to move at a position where the center plane of the relative horizontal axis initially coincides with the surface to be processed of the glass substrate, and a diffraction morphology image of the target Bessel beam reflected by the surface to be processed of the glass substrate is acquired by a configured CCD camera; the CCD camera is configured to acquire the diffraction morphology image of the target Bessel beam reflected by the surface to be processed of the glass substrate.

[0016] When the clarity and completeness of the acquired target Bessel beam diffraction morphology image meet the predetermined conditions, it is determined that the surface to be processed of the glass substrate to be processed coincides with the target transverse axis center surface of the target transverse axis center of the target Bessel beam non-diffraction propagation length.

[0017] Optionally, when the clarity and completeness of the acquired target Bessel beam diffraction topography image meet predetermined conditions, it includes:

[0018] The acquired target Bessel beam diffraction morphology image is compared with a predetermined comparison template. If the consistency result of the comparison meets the predetermined threshold range, then the morphology clarity and integrity of the target Bessel beam diffraction morphology image are determined to meet the predetermined conditions.

[0019] Optionally, determining the relative transverse axis center position of the target Bessel beam's diffraction-free propagation length includes:

[0020] The movement of the focusing objective is controlled, and the focused spot images of the target Bessel beam at different positions of the focusing objective are acquired by a spot analyzer; the spot analyzer is configured such that the target Bessel beam obtained after the generated Bessel beam is focused by the focusing objective can illuminate the target surface of the spot analyzer; the focusing objective is used to focus the generated Bessel beam to obtain the target Bessel beam for modifying the glass substrate to be processed.

[0021] Based on the collected focused spot image of the target Bessel beam, the spot morphology is analyzed, and the first position of the focusing objective is recorded when the focused spot morphology of the target Bessel beam is complete for the first time, and the second position of the focusing objective is recorded when the focused spot morphology of the target Bessel beam is missing.

[0022] The center position between the first position and the second position is determined as the relative transverse axis center position of the non-diffraction propagation length of the target Bessel beam.

[0023] Secondly, this disclosure discloses an apparatus for processing through-holes in a laser-modified glass substrate, the apparatus comprising:

[0024] A displacement stage is used to support the glass substrate to be processed.

[0025] A target Bessel beam generation module is used to generate a target Bessel beam for modifying a glass substrate to be processed. The target Bessel beam generation module includes a laser emitter, a beam shaping module, and a focusing objective. The laser emitter is used to emit a Gaussian beam, the beam shaping module is used to shape the Gaussian beam to obtain a Bessel beam, and the focusing objective is used to focus the generated Bessel beam to obtain the target Bessel beam.

[0026] An industrial control computer is used to control the position of a displacement stage carrying the glass substrate to be processed, based on the input thickness of the glass substrate to be processed and the target transverse axis center plane of the target transverse axis center of the target Bessel beam non-diffraction propagation length, so that the target transverse axis center plane of the target transverse axis center of the target Bessel beam non-diffraction propagation length coincides with the thickness center plane of the glass substrate to be processed.

[0027] Optionally, the industrial control computer is further configured to control the position of the displacement stage carrying the glass substrate to be processed, to align the target transverse axis center plane of the target Bessel beam non-diffraction propagation length target transverse axis center with the surface to be processed of the glass substrate, and after aligning the target transverse axis center plane with the surface to be processed of the glass substrate, to move the glass substrate to be processed by 1 / 2 the thickness of the glass substrate in the direction of emission of the target Bessel beam, so that the target transverse axis center plane of the target Bessel beam non-diffraction propagation length target transverse axis center coincides with the thickness center plane of the glass substrate to be processed.

[0028] Optionally, the device further includes:

[0029] A CCD camera, configured to acquire diffraction morphology images of the target Bessel beam reflected from the surface of the glass to be processed;

[0030] The industrial control computer is further configured to: determine the relative transverse axis center position of the non-diffraction propagation length of the target Bessel beam; and adjust the position of the surface to be processed on the glass substrate by adjusting the position of the displacement stage carrying the glass substrate to be processed, so that the surface to be processed on the glass substrate initially coincides with the relative transverse axis center plane of the non-diffraction propagation length of the target Bessel beam; and control the glass substrate to be processed to move at the position where the relative transverse axis center plane initially coincides with the surface to be processed on the glass substrate, and acquire the diffraction morphology image of the target Bessel beam reflected by the surface to be processed on the glass substrate through a configured CCD camera; and analyze the acquired diffraction morphology image of the target Bessel beam, and when the morphology clarity and integrity of the acquired diffraction morphology image of the target Bessel beam meet predetermined conditions, determine that the surface to be processed on the glass substrate coincides with the target transverse axis center plane of the non-diffraction propagation length of the target Bessel beam.

[0031] Optionally, the industrial control computer is further configured to compare the acquired target Bessel beam diffraction morphology image with a predetermined comparison template. If the consistency result of the comparison meets a predetermined threshold range, then the morphology clarity and completeness of the target Bessel beam diffraction morphology image are determined to meet predetermined conditions.

[0032] Optionally, the device further includes:

[0033] A spot analyzer is configured such that the generated Bessel beam, after being focused by a focusing objective, can illuminate the target surface of the spot analyzer, and the focused spot images of the target Bessel beam at different positions of the focusing objective are acquired.

[0034] The industrial control computer is also used to control the movement of the focusing objective, perform spot morphology analysis based on the collected images of the focused spot of the target Bessel beam at different positions of the focusing objective, record the first position of the focusing objective when the focused spot morphology of the target Bessel beam is complete for the first time, and the second position of the focusing objective when the focused spot morphology of the target Bessel beam is missing; and is used to determine the center position of the first position and the second position as the relative transverse axis center position of the non-diffraction propagation length of the target Bessel beam.

[0035] This disclosure provides a method for processing through-holes in a glass substrate based on laser modification, comprising: determining a target transverse axis center plane, the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length; aligning the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length with the thickness center plane of the glass substrate to be processed; controlling the alignment of the target transverse axis center plane with the thickness center plane of the glass substrate to be processed, and performing modification processing on the glass substrate to be processed. In other words, by aligning the target transverse axis center plane of the determined Bessel beam's non-diffraction propagation length with the thickness center plane of the glass substrate to be processed, and then performing a modification treatment on the glass substrate, the problem of uneven modification on the upper and lower sides of the thickness center plane of the glass substrate to be processed can be avoided when aligning the non-target transverse axis center plane of the non-diffraction propagation length with the thickness center plane of the glass substrate. This is because the beam diameter and energy intensity on both sides of the non-target transverse axis center plane of the non-diffraction propagation length are different. As a result, the vias of the obtained glass substrate can be uniformly modified around the upper and lower parts of the thickness center plane, thereby improving the quality of subsequent via etching.

[0036] To make the above-mentioned objects, features and advantages of this disclosure more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0037] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings used in the embodiments will be briefly described below. These drawings are incorporated in and constitute a part of this specification. They illustrate embodiments conforming to this disclosure and, together with the specification, serve to explain the technical solutions of this disclosure. It should be understood that the following drawings only show some embodiments of this disclosure and should not be considered as limiting the scope. Those skilled in the art can obtain other related drawings based on these drawings without creative effort.

[0038] Figure 1 This is a schematic diagram of a Bessel beam provided in an embodiment of this disclosure;

[0039] Figure 2 This is a schematic diagram of the structure of the laser-modified glass substrate through-hole processing device provided in this embodiment of the present disclosure;

[0040] Figure 3 This is a schematic diagram showing that the center plane of the Bessel beam's non-diffraction propagation length center coincides with the thickness center plane of the glass substrate to be processed, according to an embodiment of this disclosure.

[0041] Figure 4 This is a schematic flowchart of a method for processing through-holes in a laser-modified glass substrate according to an embodiment of this disclosure;

[0042] Figure 5 An example image of the diffraction morphology of the target Bessel beam is captured when the surface to be processed on the glass substrate coincides with the target transverse axis center plane of the target Bessel beam without diffraction propagation length.

[0043] Figure 6 Example image of the target Bessel beam diffraction morphology when the non-target transverse axis center plane coincides with the surface to be processed of the glass substrate.

[0044] Figure 7 Another example of the target Bessel beam diffraction morphology image acquired when the non-target transverse axis center plane coincides with the surface to be processed on the glass substrate.

[0045] The explanations of the symbols in the attached figures are as follows:

[0046] 1-Laser emitter; 2-Optical shutter; 3-Power adjustment module; 4-Beam expander; 5-Waveplate; 6-Aperture; 7-Beam shaping module; 8-Focusing objective lens; 9-Imaging tube; 91-Dichroic mirror; 92-Cemented doublet lens; 10-CCD camera; 11-Spot analyzer; 12-Displacement stage; 13-Industrial control computer. Detailed Implementation

[0047] The following specific examples illustrate the implementation of embodiments of this disclosure. Those skilled in the art can easily understand other advantages and effects of the embodiments of this disclosure from the content disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. Embodiments of this disclosure can also be implemented or applied through other different specific implementation methods, and the details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the embodiments of this disclosure. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of the embodiments of this disclosure.

[0048] A glass substrate through-hole processing apparatus based on Bessel beams typically includes: a displacement stage for supporting the glass substrate, a laser emitter, a beam shaping module (such as a conical lens), and a focusing objective. The general processing procedure includes: the Gaussian beam emitted by the laser emitter is shaped by the beam shaping module to obtain a Bessel beam, and the Bessel beam is then focused by the focusing objective to obtain a suitable focused spot and depth of focus, thereby modifying the glass substrate.

[0049] This disclosure provides an apparatus for processing through-holes in a laser-modified glass substrate, such as... Figure 2As shown, it includes:

[0050] The displacement stage 12 is used to support the glass substrate to be processed.

[0051] A target Bessel beam generation module is used to generate a target Bessel beam for modifying a glass substrate. The target Bessel beam generation module includes a laser emitter 1, a beam shaping module 7, and a focusing objective 8. The laser emitter 1 emits a Gaussian beam, the beam shaping module 7 shapes the Gaussian beam to obtain a Bessel beam, and the focusing objective 8 focuses the generated Bessel beam to obtain the target Bessel beam. The laser emitter 1 can be an infrared picosecond laser or other laser emitters capable of achieving the functions of this disclosure; the focusing objective 8 can be an infrared focusing objective or other focusing objective capable of achieving the functions of this disclosure. Specifically, the laser emitter 1 and the beam shaping module 7 may also sequentially include a shutter 2, a power adjustment module 3, a beam expander 4, a waveplate 5, and an aperture 6. Specifically, the laser emitter 1 emits a Gaussian beam, which passes through the shutter 2 and enters the power adjustment module 3. After the power of the Gaussian laser beam is adjusted by the power adjustment module 3, it is expanded and collimated by the beam expander 4. Then, it passes through the waveplate 5 and the aperture 6 and enters the beam shaping module 7. The shaping process yields a Bessel beam, which then passes through the focusing objective lens 8 to obtain the target Bessel beam for processing the glass substrate to be processed.

[0052] Industrial computer 13 is configured to determine the target transverse axis center plane (wherein, exemplarily, based on the input thickness of the glass substrate to be processed and the determined target Bessel beam non-diffraction propagation length target transverse axis center plane) according to the input thickness of the glass substrate to be processed and the target transverse axis center plane (wherein, exemplarily, with the input thickness of the glass substrate to be processed and the target transverse axis center plane) according to the input thickness of the glass substrate to be processed and the determined target Bessel beam non-diffraction propagation length target transverse axis center plane) according to ... Bessel beam non-diffr Figure 1 For example, the target horizontal axis center is the center between the starting point L1 and the ending point L2 of the Bessel beam's non-diffraction propagation region. That is, with the Bessel beam propagation direction as the horizontal axis, the middle region between the starting point L1 and the ending point L2 of the Bessel beam's non-diffraction propagation region is the Bessel beam's non-diffraction propagation length. Its target horizontal axis center is the center point of L1 and L2 on the horizontal axis. The target horizontal axis center plane is the normal plane where the target center point of the Bessel beam's non-diffraction propagation length is located. The Bessel beam's non-diffraction propagation length refers to the Bessel beam's transverse intensity distribution changing little within a certain propagation distance (the magnitude of the non-diffraction propagation length can be determined by setting a threshold for different changes based on requirements). The position of the displacement stage 12 carrying the glass substrate to be processed is controlled so that the target horizontal axis center plane of the target Bessel beam's non-diffraction propagation length coincides with the thickness center plane of the glass substrate to be processed. The thickness center plane of the glass substrate to be processed is, for example... Figure 3 As shown, it can be the plane located at 1 / 2 the thickness of the glass substrate to be processed from the upper surface of the glass substrate to be processed.

[0053] Due to errors and other factors, the thickness center plane of the glass substrate to be processed disclosed in this invention is not an absolutely precise value. In actual implementation, the plane on which the glass substrate to be processed coincides with the target horizontal axis center plane is not the plane on which the thickness center plane is located with absolute precision, but may be on the plane approximately where the thickness center plane is located. This coincidence approximately on the plane where the thickness center plane is located is also within the protection scope of this patent disclosure.

[0054] Specifically, in the application process, the thickness H of the glass substrate to be processed can be input. The industrial control computer can control the position of the displacement stage carrying the glass substrate to be processed based on the input thickness H of the glass substrate to be processed and the target transverse axis center plane of the target Bessel beam non-diffraction propagation length target transverse axis center, so that the target transverse axis center plane of the target Bessel beam non-diffraction propagation length target transverse axis center coincides with the thickness center plane of the glass substrate to be processed. Figure 3 As shown, since the target Bessel beam has no diffraction propagation length, the beam diameter and energy distribution on both sides of the target horizontal axis center plane are uniform, which makes the modification of the glass substrate to be processed more uniform on both sides of the thickness center plane.

[0055] Specifically, the industrial control computer can control the position of the displacement stage carrying the glass substrate to be processed, aligning the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length target transverse axis center with the surface to be processed of the glass substrate. After aligning the target transverse axis center plane with the surface to be processed (the upper surface of the glass), the glass substrate to be processed is moved towards the emission direction of the target Bessel beam by 1 / 2 the thickness of the glass substrate, so that the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length target transverse axis center coincides with the thickness center plane of the glass substrate.

[0056] Specifically, the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length can be identified and determined using appropriate image analysis methods; alternatively, the position of the target transverse axis center plane can be calculated and determined based on the parameters of the instruments used to generate the target Bessel beam and the connection relationships between the instruments; other methods can also be used to identify and determine the position of the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length. It should be noted that the determined target transverse axis center and target transverse axis center plane are not absolute and may contain some errors.

[0057] In this embodiment, the target transverse axis center plane of the determined Bessel beam non-diffraction propagation length target transverse axis center plane is aligned with the thickness center plane of the glass substrate to be processed. Then, the glass substrate to be processed is modified. This avoids the problem of uneven modification on the upper and lower sides of the thickness center plane of the glass substrate when the non-target transverse axis center plane of non-diffraction propagation length is aligned with the thickness center plane of the glass substrate. This is because the beam diameter and energy intensity on both sides of the non-target transverse axis center plane of non-diffraction propagation length are different. As a result, the through holes of the obtained glass substrate can be uniformly modified around the upper and lower parts of the thickness center plane, thereby improving the quality of subsequent etching of the through holes.

[0058] This disclosure provides a possible implementation, specifically, the apparatus further includes:

[0059] A CCD camera 10 is configured to acquire diffraction morphology images of the target Bessel beam reflected from the surface of the glass to be processed. A spot analyzer 11 is configured such that the target Bessel beam, obtained by focusing the generated Bessel beam through a focusing objective lens, illuminates the target surface of the spot analyzer, and acquires focused spot images of the target Bessel beam at different positions of the focusing objective lens. The CCD camera is a digital camera with a charge-coupled device (CCD) image sensor.

[0060] Specifically, such as Figure 2 As shown, the imaging tube 9 and CCD camera 10 can be fixed on the Z-axis gantry, the focusing objective 8 can be fixed on the Z-axis movable guide rail, the CCD camera 10 can be placed above the imaging tube, the imaging tube 9 can be placed above the focusing objective 8, the spot analyzer 11 can be fixed on the movable guide rail on the left or right side of the displacement stage, the vacuum washing plate can be fixed on the upper part of the electrically controlled displacement platform, and the industrial control computer can be connected to the electrically controlled displacement platform, the spot analyzer guide rail, the focusing objective guide rail, the laser emitter, the laser shutter, the power adjustment module, and the beam shaping module via wiring harnesses; the laser emitter 1 is set in front of the laser shutter. Specifically, the imaging tube can include a cemented doublet lens 92 and a dichroic mirror 91. The cemented doublet lens 92 is placed above the dichroic mirror 91 and is placed parallel to each other. The dichroic mirror 91 is fixed at a 45° angle. Specifically, the dichroic mirror 91 includes a transmitting surface and a reflecting surface; the reflecting surface is coated with a Knm high-reflectivity film, and the transmitting surface is coated with a visible light anti-reflection film, where K can be from 808 to 1550. Specifically, a vacuum chuck is used to support and fix the glass substrate to be processed. The vacuum chuck is fixed to the electrically controlled displacement stage, which is used to adjust the height of the vacuum chuck and the glass substrate to be processed. The glass substrate to be processed can reflect a Bessel beam onto the dichroic mirror and then reflectively couple it into the focusing objective lens.

[0061] The industrial control computer 13 can control the movement of the focusing objective lens, perform spot morphology analysis based on the collected images of the focused spot of the target Bessel beam at different positions of the focusing objective lens 8, record the first position of the focusing objective lens when the focused spot morphology of the target Bessel beam is complete for the first time, and the second position of the focusing objective lens when the focused spot morphology of the target Bessel beam is missing; and determine the center position of the first position and the second position as the relative transverse axis center position of the non-diffraction propagation length of the target Bessel beam.

[0062] Specifically, the industrial control computer can adjust the position of the displacement stage carrying the glass substrate to be processed, and adjust the position of the surface to be processed on the glass substrate, so that the surface to be processed on the glass substrate initially coincides with the relative transverse axis center plane of the target Bessel beam's non-diffraction propagation length relative transverse axis center plane; and can also control the glass substrate to be processed to move at the position where the relative transverse axis center plane initially coincides with the surface to be processed on the glass substrate, and acquire the diffraction morphology image of the target Bessel beam reflected by the surface to be processed on the glass substrate through a configured CCD camera; and can also analyze the acquired diffraction morphology image of the target Bessel beam, and when the morphology clarity and completeness of the acquired target Bessel beam diffraction morphology image meet predetermined conditions, then it is determined that the surface to be processed on the glass substrate coincides with the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length target transverse axis center plane.

[0063] In this process, a corresponding machine learning classification model can be trained. By inputting the collected target Bessel beam diffraction morphology image into the pre-trained machine learning classification model, the position of the glass substrate to be processed corresponding to the current target Bessel beam diffraction morphology image can be determined, and whether the surface to be processed of the glass substrate coincides with the target transverse axis center plane of the target transverse axis center of the target Bessel beam without diffraction propagation length.

[0064] Alternatively, an image similarity calculation algorithm can be used to determine the position of the glass substrate to be processed corresponding to the current target Bessel beam diffraction morphology image, and whether the surface to be processed on the glass substrate coincides with the target horizontal axis center plane of the target Bessel beam's non-diffraction propagation length target horizontal axis center. Specifically, the industrial control computer can compare the acquired target Bessel beam diffraction morphology image with a predetermined comparison template, and perform image similarity calculation using one or more image similarity calculation methods such as histogram comparison and feature point matching. If the consistency result of the comparison meets a predetermined threshold range, then the morphology clarity and completeness of the target Bessel beam diffraction morphology image are determined to meet predetermined conditions.

[0065] By way of example, the apparatus of this disclosure can achieve the following: the target transverse axis center plane of the target Bessel beam coincides with the thickness center plane of the glass substrate to be processed.

[0066] 1. System configuration steps: The coordinate processing module on the industrial control computer records the absolute coordinate positions of the near-infrared focusing objective, displacement stage, and spot analyzer. The coordinate processing module is a coordinate recording / processing software within the industrial control computer. After system startup, it records the absolute coordinate positions (X, Y, Z) of some hardware components. Its workflow involves setting a corner of the gantry's top surface as the origin (0,0,0) to establish a three-dimensional coordinate system; the X-axis extends left or right from the origin; the Y-axis extends forward or backward from the origin; and the Z-axis extends vertically downward from the origin.

[0067] 2. Target Bessel beam generation steps: A Gaussian beam is emitted by an infrared picosecond laser, passes through an optical shutter and enters a power adjustment module. The laser beam power is adjusted by the power adjustment module and then collimated by a beam expander. After passing through a waveplate and an aperture, it enters a beam shaping module to modulate and generate a Bessel beam. The Bessel beam is then focused by a near-infrared focusing objective to obtain the target Bessel beam.

[0068] 3. Determining the non-diffraction propagation length of the target Bessel beam relative to the transverse axis center and the plane of the transverse axis: The industrial control computer sends a displacement command to the beam spot analyzer, aligning it with the near-infrared focusing objective to observe the beam spot morphology. The near-infrared focusing objective is moved up and down, and the beam spot morphology is observed using the beam spot analyzer. The initial position (X1, Y1, Z1) of the near-infrared focusing objective when the morphology is first complete, and the ending position (X1, Y1, Z2) when the morphology is incomplete, are recorded. This reveals the non-diffraction propagation length of the target Bessel beam, L1 = Z2 - Z1, and the position of the non-diffraction propagation length of the target Bessel beam relative to the transverse axis center is (X1, Y1, Z3), where Z3 = Z1 + L1 / 2 = (Z1 + Z2) / 2. Alternatively, the beam spot analyzer can be moved while the focusing objective remains stationary to determine the position relative to the transverse axis center.

[0069] 4. The initial overlap of the relative horizontal axis center plane with the surface to be processed of the glass substrate is achieved by the industrial control computer controlling the displacement stage to move to the coordinate position (X2,Y2,Z4), where Z4=Z3+h1, and h1 is the thickness value of the glass substrate to be processed input to the industrial control computer. This achieves the initial overlap of the upper surface of the glass substrate to be processed (the surface to be processed) with the relative horizontal axis center plane of the target Bessel beam's non-diffraction propagation length relative to the horizontal axis center.

[0070] 5. In the step of aligning the target horizontal axis center plane with the surface to be processed of the glass substrate, the light reflected from the surface to be processed of the target Bessel beam is imaged onto the target surface of the CCD by a near-infrared objective lens and a cemented doublet lens. The diffraction morphology of the target Bessel beam on the surface to be processed of the glass substrate can be acquired by the CCD camera. The vertically moving stage allows for the acquisition of the beam diffraction morphology at different heights near the center of the non-diffraction propagation length of the target Bessel beam. (The principle is as follows: the surface to be processed on the glass substrate (i.e., the upper surface of the glass) can be analogous to a mirror. When the Bessel beam shines on the upper surface of the glass through the objective lens, some of the light is reflected back into the objective lens and focused by the imaging tube, thus illuminating the CCD target surface and forming an image. Therefore, moving the stage vertically is equivalent to the light rings at different positions of the non-diffraction propagation length of the Bessel beam hitting the upper surface of the glass and being reflected and focused onto the CCD target surface.) By comparing the clarity and completeness of the diffraction morphology of the target Bessel beam, it can be determined whether the target horizontal axis center plane of the non-diffraction propagation length of the target Bessel beam coincides with the upper surface (the surface to be processed) of the glass substrate. If the clarity and completeness of the diffraction morphology meet the predetermined conditions, such as if the similarity between the acquired target Bessel beam diffraction morphology image and the image of the predetermined template meets the predetermined threshold, then it can be considered that the target Bessel beam has no diffraction propagation length. The target transverse axis center plane of the target transverse axis center coincides with the upper surface (the surface to be processed) of the glass substrate to be processed.

[0071] 6. The target horizontal axis center plane coincides with the thickness center plane of the glass substrate to be processed (the plane containing 1 / 2 of the thickness of the glass substrate to be processed). After the coincidence, the coordinate processing module of the industrial control computer sends a command to make the displacement stage move downward relative to the target horizontal axis center plane (h2 = h1 / 2) so that the target horizontal axis center plane of the target Bessel beam without diffraction propagation length coincides with the thickness center plane of the glass substrate to be processed.

[0072] In this embodiment, due to instrument parameter errors, it may be impossible to calculate and determine the target transverse axis center of the target Bessel beam's non-diffraction propagation length in an absolute sense. Therefore, the relative transverse axis center plane of the target Bessel beam's non-diffraction propagation length relative to the transverse axis center can be determined first. Then, this relative transverse axis center plane is initially overlapped with the surface to be processed on the glass substrate (a rough overlap or preliminary overlap step). Next, a diffraction morphology image of the target Bessel beam reflected from the surface to be processed on the glass substrate near the preliminary overlap position is acquired. Using image analysis methods, the position of the glass substrate corresponding to the diffraction morphology image that meets predetermined clarity and integrity conditions is taken as the position where the surface to be processed on the glass substrate coincides with the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length (a precise overlap step), thus achieving the overlap between the surface to be processed on the glass substrate and the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length. This method uses an industrial control computer to adjust the position of the glass substrate to be processed based on its position relative to the center of the horizontal axis, achieving initial overlap. Then, based on the initial overlap, precise overlap is achieved through image comparison. This automates the process of aligning the center surface of the thickness of the glass substrate (the plane containing half the thickness of the glass substrate) with the center surface of the target Bessel beam's non-diffraction propagation length along the horizontal axis. Compared to manual focusing (aligning the center surface of the target Bessel beam's non-diffraction propagation length with the center surface of the thickness of the glass substrate), this method improves focusing efficiency. Furthermore, by using initial overlap followed by precise overlap, the method avoids the problem of requiring extensive data analysis and computation when performing precise overlap directly through image analysis without an initial overlap step. Moreover, the method of this embodiment only requires adjusting the input thickness of the glass substrate for glass substrates of different thicknesses, making it universally applicable.

[0073] This disclosure provides a method for processing through-holes in a laser-modified glass substrate, such as... Figure 4 As shown, it includes:

[0074] Step S401: Determine the target transverse axis center plane, which is the center of the target transverse axis at the non-diffraction propagation length of the target Bessel beam.

[0075] For example, with Figure 1 For example, the target horizontal axis center is the center between the starting point L1 and the ending point L2 of the Bessel beam's non-diffraction propagation region. That is, with the Bessel beam propagation direction as the horizontal axis, the middle region between the starting point L1 and the ending point L2 of the Bessel beam's non-diffraction propagation region is the Bessel beam's non-diffraction propagation length. Its target horizontal axis center is the center point of L1 and L2 on the horizontal axis, and the target horizontal axis center plane is the normal plane where the target center point of the Bessel beam's non-diffraction propagation length is located.

[0076] The diffraction-free propagation length of the Bessel beam refers to the length of the Bessel beam within a certain propagation distance where the lateral intensity distribution changes minimally. The magnitude of the diffraction-free propagation length can be determined by setting a threshold value based on actual needs.

[0077] Specifically, the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length can be identified and determined using appropriate image analysis methods; alternatively, the position of the target transverse axis center plane can be calculated and determined based on the parameters of the instruments used to generate the target Bessel beam and the connection relationships between the instruments; other methods can also be used to identify and determine the position of the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length. It should be noted that the determined target transverse axis center and target transverse axis center plane are not absolute and may contain some errors.

[0078] Step S402: Align the target transverse axis center plane of the target Bessel beam non-diffraction propagation length target transverse axis center plane with the thickness center plane of the glass substrate to be processed.

[0079] Among them, the thickness center plane of the glass substrate to be processed, such as Figure 3 As shown, it can be the plane located at 1 / 2 the thickness of the glass substrate to be processed from the upper surface of the glass substrate to be processed.

[0080] Specifically, the position of the moving stage carrying the glass substrate to be processed can be controlled by an industrial control computer to adjust the distance between the target horizontal axis center plane of the target Bessel beam's non-diffraction propagation length target horizontal axis center and the thickness center plane of the glass substrate to be processed, so as to achieve the coincidence of the plane containing the target horizontal axis center plane and the thickness center plane. Specifically, step S402 may include: step S4021 (not shown in the figure), aligning the target horizontal axis center plane of the target Bessel beam's non-diffraction propagation length target horizontal axis center with the surface to be processed of the glass substrate (specifically, the upper surface of the glass substrate when it is placed on the stage for processing); step S4022 (not shown in the figure), after aligning the target horizontal axis center plane with the surface to be processed of the glass substrate, moving the glass substrate to be processed in the direction of the target Bessel beam emission by 1 / 2 the thickness of the glass substrate to be processed, so that the target horizontal axis center plane of the target Bessel beam's non-diffraction propagation length target horizontal axis center coincides with the thickness center plane of the glass substrate to be processed.

[0081] Step S403: Control the center plane of the target horizontal axis to coincide with the center plane of the thickness of the glass substrate to be processed, and perform a modification treatment on the glass substrate to be processed.

[0082] Specifically, an industrial control computer can be used to control the target horizontal axis center plane to coincide with the thickness center plane of the glass substrate to be processed, move the glass substrate to be processed horizontally, and use the generated target Bessel beam to modify the glass substrate to be processed according to the predetermined through hole position.

[0083] This disclosure provides a method for processing through-holes in a glass substrate based on laser modification, comprising: determining a target transverse axis center plane, the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length; aligning the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length with the thickness center plane of the glass substrate to be processed; controlling the alignment of the target transverse axis center plane with the thickness center plane of the glass substrate to be processed, and performing modification processing on the glass substrate to be processed. In other words, by aligning the target transverse axis center plane of the determined Bessel beam's non-diffraction propagation length with the thickness center plane of the glass substrate to be processed, and then performing a modification treatment on the glass substrate, the problem of uneven modification on the upper and lower sides of the thickness center plane of the glass substrate to be processed can be avoided when aligning the non-target transverse axis center plane of the non-diffraction propagation length with the thickness center plane of the glass substrate. This is because the beam diameter and energy intensity on both sides of the non-target transverse axis center plane of the non-diffraction propagation length are different. As a result, the vias of the obtained glass substrate can be uniformly modified around the upper and lower parts of the thickness center plane, thereby improving the quality of subsequent via etching.

[0084] This disclosure provides a possible implementation method, wherein step S4021 (not shown in the figure) involves aligning the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length target transverse axis center with the surface to be processed of the glass substrate, including:

[0085] Step S40211 (not shown in the figure): Determine the relative transverse axis center position of the target Bessel beam's non-diffraction propagation length.

[0086] Specifically, an industrial control computer can control the movement of the focusing objective lens, and a spot analyzer can be used to acquire focused spot images of the target Bessel beam at different positions of the focusing objective lens. The spot analyzer is configured such that the target Bessel beam obtained after the generated Bessel beam is focused by the focusing objective lens can illuminate the target surface of the spot analyzer. The focusing objective lens is used to focus the generated Bessel beam to obtain the target Bessel beam for modifying the glass substrate to be processed. Then, based on the acquired focused spot images of the target Bessel beam, spot morphology analysis is performed, recording the first position of the focusing objective lens when the focused spot morphology of the target Bessel beam is complete for the first time, and the second position of the focusing objective lens when the focused spot morphology of the target Bessel beam is incomplete. Finally, the center position between the first position and the second position is determined as the relative transverse axis center position of the non-diffraction propagation length of the target Bessel beam.

[0087] For example, by observing the morphology of the light spot with a light spot analyzer, and recording the starting position (X1,Y1,Z1) of the near-infrared focusing objective when the morphology is first complete, and the ending position (X1,Y1,Z2) when the morphology is missing, it can be known that the non-diffraction propagation length L1 = Z2 - Z1 of the target Bessel beam, and the relative horizontal axis center position of the non-diffraction propagation length of the target Bessel beam is (X1,Y1,Z3), where Z3 = Z1 + L1 / 2 = (Z1 + Z2) / 2.

[0088] Step S40212 (not shown in the figure): Adjust the position of the surface to be processed of the glass substrate to be processed so that the surface to be processed of the glass substrate to be processed initially coincides with the relative transverse axis center plane of the relative transverse axis center of the target Bessel beam without diffraction propagation length.

[0089] Following the previous example, the displacement stage is moved to the coordinate position (X2,Y2,Z4) by the industrial control computer, where Z4=Z3+h1, and h1 is the thickness value of the glass substrate to be processed input to the industrial control computer. This achieves the initial coincidence of the upper surface (the surface to be processed) of the glass substrate to be processed with the relative horizontal axis center plane of the target Bessel beam's non-diffraction propagation length relative to the horizontal axis center.

[0090] Step S40213 (not shown in the figure): The glass substrate to be processed is controlled to move at a position where the center plane of the relative horizontal axis initially coincides with the surface to be processed of the glass substrate, and the diffraction morphology image of the target Bessel beam reflected by the surface to be processed of the glass substrate is acquired by a configured CCD camera; the CCD camera is configured to acquire the diffraction morphology image of the target Bessel beam reflected by the surface to be processed of the glass substrate.

[0091] Step S40214 (not shown in the figure): When the clarity and completeness of the acquired target Bessel beam diffraction morphology image meet the predetermined conditions, it is determined that the surface to be processed of the glass substrate to be processed coincides with the target transverse axis center plane of the target transverse axis center of the target Bessel beam non-diffraction propagation length target.

[0092] Specifically, when the clarity and completeness of the acquired target Bessel beam diffraction morphology image meet predetermined conditions, it is determined that the surface to be processed on the glass substrate is aligned with the target horizontal axis center plane of the target Bessel beam's non-diffraction propagation length. The principle is as follows: the surface to be processed on the glass substrate (i.e., the upper surface of the glass) can be analogized to a mirror. When the Bessel beam shines on the upper surface of the glass through the objective lens, some of the light is reflected back into the objective lens, focused by the imaging tube, and then shines on the CCD target surface, thus forming an image. Therefore, moving the vertical position is equivalent to the light rings at different positions of the Bessel beam's non-diffraction propagation length hitting the upper surface of the glass, and thus being reflected and focused onto the CCD target surface. Therefore, the image acquired by the CCD can be used to determine when the target horizontal axis center plane of the target Bessel beam's non-diffraction propagation length hits the upper surface of the glass. As a special type of non-diffraction beam, the Bessel beam's intensity distribution on a cross-section perpendicular to the propagation direction appears as a central spot and many concentric rings. The intensity decreases from the inside out, resulting in a higher energy concentration near the central axis (i.e., near the central plane), enabling efficient material processing. Furthermore, the central plane is symmetrical, with almost equal intensity at its top and bottom. Similarly, when the target's transverse axis center plane strikes the upper surface of glass, the energy is most concentrated at this plane, resulting in the most reflected light. This manifests as the clearest and most complete diffraction rings with the most concentric rings in the CCD image. Conversely, if a non-target transverse axis center plane strikes the glass, the clarity and completeness of the diffraction rings in the CCD image are poorer, and fewer concentric rings are present. For example, as... Figure 5 , 6 As shown in Figure 7, Figure 5 The diffraction rings are the clearest and most complete, and contain the most concentric rings. Figure 6 , 7 The clarity and integrity of the diffraction rings are poor, and there are few concentric rings, which confirms... Figure 5 The surface corresponding to the image acquired in the image is the center plane of the target's horizontal axis.

[0093] Specifically, the acquired target Bessel beam diffraction morphology image can be compared with a predetermined comparison template. If the consistency result of the comparison meets the predetermined threshold range, then the morphology clarity and integrity of the target Bessel beam diffraction morphology image are determined to meet the predetermined conditions.

[0094] The predetermined comparison template can be a Bessel beam diffraction morphology image that meets the requirements for clarity and completeness. If the acquired target Bessel beam diffraction morphology image meets the predetermined conditions, the position of the moving stage or the glass substrate to be processed corresponding to the image can be recorded. This position is the position where the surface to be processed on the glass substrate is aligned with the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length. Subsequently, the moving stage or the glass substrate to be processed can be controlled at this position to perform modification treatment on the glass substrate.

[0095] In this embodiment, due to instrument parameter errors, it may be impossible to calculate and determine the target transverse axis center of the target Bessel beam's non-diffraction propagation length in an absolute sense. Therefore, the relative transverse axis center plane of the target Bessel beam's non-diffraction propagation length relative to the transverse axis center can be determined first. Then, this relative transverse axis center plane is initially overlapped with the surface to be processed on the glass substrate (a rough overlap or preliminary overlap step). Next, a diffraction morphology image of the target Bessel beam reflected from the surface to be processed on the glass substrate near the preliminary overlap position is acquired. Using image analysis methods, the position of the glass substrate corresponding to the diffraction morphology image that meets predetermined clarity and integrity conditions is taken as the position where the surface to be processed on the glass substrate coincides with the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length (a precise overlap step), thus achieving the overlap between the surface to be processed on the glass substrate and the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length. This method uses an industrial control computer to adjust the position of the glass substrate to be processed based on its position relative to the center of the horizontal axis, achieving initial overlap. Then, based on the initial overlap, precise overlap is achieved through image comparison. This automates the process of aligning the center surface of the thickness of the glass substrate (the plane containing half the thickness of the glass substrate) with the center surface of the target Bessel beam's non-diffraction propagation length along the horizontal axis. Compared to manual focusing (aligning the center surface of the target Bessel beam's non-diffraction propagation length with the center surface of the thickness of the glass substrate), this method improves focusing efficiency. Furthermore, by using initial overlap followed by precise overlap, the method avoids the problem of requiring extensive data analysis and computation when performing precise overlap directly through image analysis without an initial overlap step. Moreover, the method of this embodiment only requires adjusting the input thickness of the glass substrate for glass substrates of different thicknesses, making it universally applicable.

[0096] It should also be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the embodiments of this disclosure. The drawings only show the components related to the embodiments of this disclosure and are not drawn according to the actual number, shape and size of the components. In actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0097] The following embodiments of this disclosure illustrate the implementation of this disclosure through specific examples. Those skilled in the art can easily understand other advantages and effects of this disclosure from the content disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. This disclosure can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this disclosure. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. Based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0098] It should be noted that various aspects of embodiments within the scope of the appended claims are described below. It will be apparent that the aspects described herein can be embodied in a wide variety of forms, and any particular structure and / or function described herein is merely illustrative. Based on this disclosure, those skilled in the art will understand that one aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number of aspects set forth herein can be used to implement the device and / or practice the method. Additionally, this device and / or method can be implemented using structures and / or functionalities other than one or more of the aspects set forth herein.

[0099] The embodiments described above are some, but not all, of the embodiments disclosed herein. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without inventive effort are within the scope of protection of this disclosure.

[0100] In the description of the embodiments of this disclosure, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this disclosure. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0101] In the description of the embodiments of this disclosure, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure based on the specific circumstances.

[0102] The above are merely specific embodiments of this disclosure, but the protection scope of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this disclosure should be included within the protection scope of this disclosure. Therefore, the protection scope of this disclosure should be determined by the scope of the claims.

Claims

1. A method for processing through-holes in a laser-modified glass substrate, characterized in that, include: Determine the target transverse axis center plane, which is the normal plane where the target transverse axis center is located, based on the target Bessel beam's non-diffraction propagation length and the target transverse axis center plane. The center plane of the target transverse axis, which is the center of the target Bessel beam's non-diffraction propagation length, is aligned with the center plane of the thickness of the glass substrate to be processed. Aligning the target transverse axis center plane of the target Bessel beam's non-diffraction propagation length with the surface to be processed on the glass substrate includes: determining the relative transverse axis center position of the target Bessel beam's non-diffraction propagation length; adjusting the position of the surface to be processed on the glass substrate so that it initially coincides with the relative transverse axis center plane of the target Bessel beam's non-diffraction propagation length, wherein the relative transverse axis center plane is the normal plane where the relative transverse axis center point of the Bessel beam's non-diffraction propagation length is located; and controlling the glass substrate to be processed to coincide with the surface to be processed on the relative transverse axis. The center plane moves to a position where it initially coincides with the surface to be processed of the glass substrate, and a CCD camera is used to acquire a diffraction morphology image of the target Bessel beam reflected from the surface to be processed of the glass substrate. The CCD camera is configured to acquire a diffraction morphology image of the target Bessel beam reflected from the surface to be processed of the glass substrate. When the clarity and completeness of the acquired diffraction morphology image of the target Bessel beam meet predetermined conditions, it is determined that the surface to be processed of the glass substrate coincides with the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel beam. Determining the relative transverse axis center position of the non-diffraction propagation length of the target Bessel beam includes: controlling the movement of the focusing objective and acquiring focused spot images of the target Bessel beam at different positions of the focusing objective using a spot analyzer; performing spot morphology analysis based on the acquired focused spot images of the target Bessel beam, recording the first position of the focusing objective when the focused spot morphology of the target Bessel beam is complete for the first time, and the second position of the focusing objective when the focused spot morphology of the target Bessel beam is missing; and determining the center position between the first position and the second position as the relative transverse axis center position of the non-diffraction propagation length of the target Bessel beam. The target transverse axis center plane of the target Bessel beam is controlled to coincide with the thickness center plane of the glass substrate to be processed, thereby modifying the glass substrate to be processed.

2. The method according to claim 1, characterized in that, The step of aligning the target transverse axis center plane, which is the center of the target Bessel beam's non-diffraction propagation length, with the thickness center plane of the glass substrate to be processed includes: The target transverse axis center plane of the target Bessel beam non-diffraction propagation length target transverse axis center is aligned with the surface of the glass substrate to be processed. After aligning the target transverse axis center plane with the surface to be processed on the glass substrate, the glass substrate to be processed is then moved by 1 / 2 the thickness of the glass substrate to be processed in the direction of emission of the target Bessel beam, so that the target transverse axis center plane of the target Bessel beam without diffraction propagation length coincides with the thickness center plane of the glass substrate to be processed.

3. The method according to claim 1, characterized in that, The condition that the clarity and completeness of the acquired target Bessel beam diffraction topography image meet predetermined conditions includes: The acquired target Bessel beam diffraction morphology image is compared with a predetermined comparison template. If the consistency result of the comparison meets the predetermined threshold range, then the morphology clarity and integrity of the target Bessel beam diffraction morphology image are determined to meet the predetermined conditions.

4. The method according to claim 1, characterized in that, The spot analyzer is configured such that the generated Bessel beam, after being focused by a focusing objective, can illuminate the target surface of the spot analyzer; the focusing objective is used to focus the generated Bessel beam to obtain the target Bessel beam for modifying the glass substrate to be processed.

5. A processing apparatus for the laser-modified glass substrate through-hole processing method of claim 1, characterized in that, The device includes: A displacement stage is used to support the glass substrate to be processed. A target Bessel beam generation module is used to generate a target Bessel beam for modifying a glass substrate to be processed. The target Bessel beam generation module includes a laser emitter, a beam shaping module, and a focusing objective. The laser emitter is used to emit a Gaussian beam, the beam shaping module is used to shape the Gaussian beam to obtain a Bessel beam, and the focusing objective is used to focus the generated Bessel beam to obtain the target Bessel beam. An industrial control computer is used to control the position of a displacement stage carrying the glass substrate to be processed, based on the input thickness of the glass substrate to be processed and the target transverse axis center plane of the target transverse axis center of the target Bessel beam non-diffraction propagation length, so that the target transverse axis center plane of the target transverse axis center of the target Bessel beam non-diffraction propagation length coincides with the thickness center plane of the glass substrate to be processed.

6. The processing apparatus according to claim 5, characterized in that, The industrial control computer is also used to control the position of the displacement stage carrying the glass substrate to be processed, to make the target horizontal axis center plane of the target Bessel beam non-diffraction propagation length target horizontal axis center coincide with the surface to be processed of the glass substrate, and after the target horizontal axis center plane coincides with the surface to be processed of the glass substrate, to move the glass substrate to be processed by 1 / 2 the thickness of the glass substrate in the direction of emission of the target Bessel beam, so that the target horizontal axis center plane of the target Bessel beam non-diffraction propagation length target horizontal axis center coincides with the thickness center plane of the glass substrate.

7. The processing apparatus according to claim 5, characterized in that, The device also includes: A CCD camera, configured to acquire diffraction morphology images of a target Bessel beam reflected from the surface to be processed of the glass substrate to be processed. The industrial control computer is further configured to: determine the relative transverse axis center position of the non-diffraction propagation length of the target Bessel beam; and adjust the position of the surface to be processed on the glass substrate by adjusting the position of the displacement stage carrying the glass substrate to be processed, so that the surface to be processed on the glass substrate initially coincides with the relative transverse axis center plane of the relative transverse axis center of the non-diffraction propagation length of the target Bessel beam; control the glass substrate to be processed to move at the position where the relative transverse axis center plane initially coincides with the surface to be processed on the glass substrate, and acquire the diffraction morphology image of the target Bessel beam reflected by the surface to be processed on the glass substrate through a configured CCD camera; and analyze the acquired diffraction morphology image of the target Bessel beam, and when the morphology clarity and integrity of the acquired diffraction morphology image of the target Bessel beam meet predetermined conditions, determine that the surface to be processed on the glass substrate coincides with the target transverse axis center plane of the target transverse axis center of the non-diffraction propagation length of the target Bessel beam.

8. The processing apparatus according to claim 5, characterized in that, The industrial control computer is also used to compare the acquired target Bessel beam diffraction morphology image with a predetermined comparison template. If the consistency result of the comparison meets a predetermined threshold range, then the clarity and completeness of the target Bessel beam diffraction morphology image are determined to meet predetermined conditions.

9. The apparatus according to claim 7, characterized in that, The device also includes: A spot analyzer is configured such that the generated Bessel beam, after being focused by a focusing objective, can illuminate the target surface of the spot analyzer, and the focused spot images of the target Bessel beam at different positions of the focusing objective are acquired. The industrial control computer is also used to control the movement of the focusing objective, perform spot morphology analysis based on the collected images of the focused spot of the target Bessel beam at different positions of the focusing objective, record the first position of the focusing objective when the focused spot morphology of the target Bessel beam is complete for the first time, and the second position of the focusing objective when the focused spot morphology of the target Bessel beam is missing; and is used to determine the center position of the first position and the second position as the relative transverse axis center position of the non-diffraction propagation length of the target Bessel beam.

Images