Cutting fluid for semiconductor material and preparation method thereof

Abstract

The invention discloses a cutting fluid for a semiconductor material and a preparation method thereof, and relates to the technical field of cutting fluids. The semiconductor material provided by the invention is composed of the following raw materials: 0.001-30.00 parts of a water-soluble lubricant; 0.001 to 30.00 parts of an anti-wear lubricant; 0.001 to 20.00 parts of an extreme pressure lubricant; 0.001 to 50.00 parts of a special wetting agent; 0.001 to 30.00 parts of an emulsifying dispersant; 0.001 to 90.00 parts of an antirust agent; 0.001 to 90.00 parts of a corrosion inhibitor; 0.001 to 10.00 parts of a bactericide; 0.001 to 50.00 parts of a settling agent; and 0.001 to 99.00 parts of deionized water. The prepared cutting fluid for the semiconductor material has high permeability and high lubricity, the surface quality of slices is high, the warping degree is low, and the cutting efficiency and the yield are improved.

Description

Technical Field

[0001] The invention relates to the technical field of cutting fluids, and in particular to a cutting fluid for semiconductor materials and a preparation method thereof. Background Art

[0002] With the rapid development of information technology and the solar energy industry, the global demand for polysilicon and monocrystalline silicon has grown rapidly. China is the world's third largest producer of solar cells. With the rapid development of the photovoltaic industry, the production of silicon wafers at the upstream of the photovoltaic industry has become increasingly important. In order to reduce costs and improve production efficiency, high-performance silicon wafers have become the "new favorite" in the silicon wafer market. In the entire silicon wafer production process, the three links of crystal pulling, truncation, and square cutting all have certain losses on silicon materials, and the consumption of silicon wafers is the greatest during cutting. Therefore, the use of efficient silicon wafer cutting fluid can improve cutting efficiency and reduce cutting consumption as much as possible. A high-performance cutting fluid can transform strong and uneven mechanical action into uniform and stable chemical mechanical action, thereby effectively reducing mechanical stress, and can also effectively dissipate heat and reduce thermal stress.

[0003] Hard and brittle materials refer to materials with high hardness and high brittleness. Most electronic and optical materials are hard and brittle materials, such as Si, GaAs, Ge, gemstones, etc. Such materials are widely used in high-precision electronic and optical industries such as solar photovoltaic industry and semiconductors. With the development of crystalline silicon cutting technology for solar energy, the requirements for cutting fluids used for cutting hard and brittle materials are getting higher and higher. On the basis of the original performance requirements such as cooling, suspension, lubrication, and dispersion, the cutting fluid must also continuously meet the changing needs of the cutting process; such as making the crystal surface smoother and easier to clean after cutting, and at the same time requiring low cost, easy regeneration and recycling of waste slurry after cutting, etc. The existing ones generally have the problem of poor hanging wire performance, poor permeability and more metal ion pollution, serious surface adsorption, and difficult to clean, resulting in excessive mechanical action during the cutting process, resulting in more damage and stress on the surface layer of the wafer, and the surface quality of the cut wafer is not ideal enough. Therefore, the existing cutting fluids for semiconductor materials have defects such as poor permeability, insufficient lubricity, and difficulty in cleaning, which makes the use of this technology very limited. Summary of the invention

[0004] The purpose of the present invention is to provide a cutting fluid for semiconductor materials and a preparation method thereof, so as to solve the following technical problems:

[0005] Existing semiconductor cutting fluids have problems such as poor permeability, insufficient lubricity and difficulty in cleaning.

[0006] The purpose of the present invention can be achieved through the following technical solutions:

[0007] A cutting fluid for semiconductor materials, comprising at least the following raw materials in parts by weight:

[0008]

[0009] As a further embodiment of the present invention: the water-soluble lubricant is one or more of polyethylene glycol laurate, polyethylene glycol monooleate, polyethylene glycol diester, dimer acid amide, dimer acid potassium, laurate amine salt, ricinoleic acid ammonium salt, and tetrameric ricinoleic acid ammonium salt.

[0010] As a further embodiment of the present invention: the anti-wear lubricant is one or more of benzotriazole, methylbenzotriazole or sulfolane.

[0011] As a further embodiment of the present invention: the extreme pressure lubricant is at least one of polyether extreme pressure lubricants.

[0012] As a further solution of the present invention: the special wetting agent is a composite wetting agent.

[0013] As a further solution of the present invention: the preparation method of the composite wetting agent comprises at least the following steps:

[0014] Add fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene (10) ether in a mass ratio of 1-1.5:1 into a reaction kettle, heat and stir to melt, then heat to 70-80° C., then slowly add concentrated sulfuric acid under stirring and keep at 80-90° C. for 2-4 hours to obtain a sulfated solution;

[0015] The sulfated solution is poured into an alkaline aqueous solution to adjust the pH to 6-7, and then sodium fatty alcohol polyoxyethylene ether sulfate is added, and the mass ratio of the sodium fatty alcohol polyoxyethylene ether sulfate to the fatty alcohol polyoxyethylene ether is 1-1.2:1, and the mixture is stirred and heated to 60-70°C to completely dissolve the sodium fatty alcohol polyoxyethylene ether sulfate to obtain a composite wetting agent.

[0016] As a further embodiment of the present invention: the emulsifying and dispersing agent is a polyoxyethylene modified emulsifying and dispersing agent.

[0017] As a further embodiment of the present invention: the preparation method of the polyoxyethylene modified emulsifying dispersant comprises at least the following steps:

[0018] Dissolving 3,5-di-tert-butyl-4-hydroxybenzyl methyl ether in acetonitrile and adding the mixture into a reaction container, wherein the mass ratio of the 3,5-di-tert-butyl-4-hydroxybenzyl methyl ether to the acetonitrile is 1:2-4;

[0019] Adding a catalyst into a reaction vessel and replacing the air in the reaction vessel with an inert gas;

[0020] The reaction container is heated to 60-90° C., and 2-butyl-2-ethyl oxirane is introduced to react, wherein the molar ratio of the 3,5-di-tert-butyl-4-hydroxybenzyl methyl ether to the 2-butyl-2-ethyl oxirane is 1:10;

[0021] After reacting for 40-60 hours, the temperature of the reaction container is lowered to 15-30° C., rotary evaporation is performed, and then extraction is performed with dichloromethane or ethyl acetate. Rotary evaporation is then performed again, and after drying, a polyoxyethylene modified emulsifying dispersant is obtained.

[0022] As a further scheme of the present invention: the rust inhibitor is one or a mixture of sebacic acid, neodecanoic acid, tribasic acid, and N-amidoaminocaproic acid; the corrosion inhibitor is one or a mixture of benzotriazole, silicate, and borate; the bactericide is triazine and / or potassium sorbate; and the precipitant is one or a mixture of diethylenetriaminepentaacetic acid, N-hydroxyethylethylaminetriacetic acid, ethylene glycol-bis-(B-aminoethyl ether)-N,N-tetraacetic acid, trisodium methylglycine diacetate, and disodium EDTA.

[0023] A method for preparing a cutting fluid for semiconductor materials as described in any of the above items, comprising at least the following preparation steps: adding deionized water to a reactor according to the mass percentage of the raw materials, controlling the temperature at 40-60°C, adding a water-soluble lubricant, an anti-wear lubricant, an extreme pressure lubricant, a special wetting agent, an emulsifying dispersant, a rust inhibitor, a corrosion inhibitor, a bactericide and a sedimentation agent in sequence, and keeping the temperature under stirring for 3-9 hours to obtain the cutting fluid for semiconductor materials.

[0024] Beneficial effects of the present invention:

[0025] In the present application, water-soluble cutting fluid for semiconductor materials is prepared by compounding water-soluble lubricants, anti-wear lubricants, extreme pressure lubricants, special wetting agents, emulsifying dispersants, rust inhibitors, corrosion inhibitors, bactericides, sedimentation agents and water. The obtained cutting fluid for semiconductor materials has excellent permeability and extremely high lubricity, can keep the surface of the diamond wire clean and the stability of the abrasive on the wire for a long time, has high surface quality of the slices, low warpage, small total thickness deviation, and can improve cutting efficiency, good cleanliness, fast powder sedimentation, little residue on the machine, and the slices are easy to clean and have a low defect rate. The COD amount of the product can be reduced and the cutting environment of the cutting fluid can be improved. After the waste liquid after cutting is centrifuged and impurities such as chips are removed, the waste liquid can be recycled or simply treated and can be directly discharged, or even directly discharged without treatment, and can meet the lubrication, cleaning, cooling and rust prevention requirements required for diamond wire cutting and grinding of hard and brittle materials such as silicon carbide, gallium arsenide, silicon nitride, aluminum nitride ceramics, and materials such as single crystal silicon and polycrystalline silicon.

[0026] The water-soluble lubricant selected in the present application has a long carbon chain alkyl in its molecular structure, the anti-wear lubricant selected is at least one of benzotriazole, methylbenzotriazole or cyclopentane sulfone, and the extreme pressure lubricant selected is a polyether extreme pressure lubricant. The three act synergistically, thereby making the abrasive particles small and evenly dispersed, and the physical and chemical properties of the diamond wire cutting fluid are stable. The prepared cutting fluid has a good cooling and lubricating effect, reduces the surface damage and mechanical stress of the semiconductor wafer, reduces the problem of brittle cracking or scratches of the silicon wafer during the cutting process, is conducive to the subsequent cleaning of the semiconductor wafer, can effectively improve the thickness error of the semiconductor wafer, and improve the cutting yield. Among them, the selected water-soluble lubricant gives the cutting agent excellent lubrication properties, is non-toxic and harmless, is beneficial to environmental protection, and the improvement of lubrication properties can reduce the line marks of the silicon wafer and improve the yield of silicon wafer thinning cutting. The selected anti-wear lubricant is an excellent anti-wear agent, and its anti-wear performance is much higher than that of general lubricants. Adding benzotriazole, methylbenzotriazole, and sulfone containing sulfur and oxygen functional groups can significantly improve the lubricity and wear resistance of diamond wire cutting fluid, reduce the wear of diamond powder, and thus reduce the cost of diamond powder. The selected extreme pressure lubricant can work synergistically with special wetting agents and emulsifiers to ensure boundary extreme pressure lubrication, reduce surface tension, and improve wetting and penetration ability. It can significantly improve the problem of edge collapse when cutting brittle and hard materials, especially the problem of edge collapse when cutting large-sized sapphires, and at the same time reduce the problem of wire breakage during cutting and improve flatness.

[0027] The special wetting agent prepared in this application is a composite wetting agent with excellent penetration performance. The effective ingredients in the cutting fluid can quickly penetrate into the cutting seam, improve the lubrication effect, and improve the cutting efficiency and quality. The two kinds of sodium sulfates generated by the special wetting agent in the preparation process and the fatty alcohol polyoxyethylene ether sodium sulfate are all anionic surfactants, and the fatty alcohol polyoxyethylene ether, nonylphenol polyoxyethylene ether and fatty alcohol polyoxyethylene ether sodium sulfate that are not esterified in the reaction are nonionic surfactants, and the "synergistic" effect of two types of 6 surfactants (active substances) in the product. Fatty alcohol polyoxyethylene ether is the main component, which improves the penetration ability of the cutting fluid, makes it reasonably matched with the lubricant, can greatly reduce power consumption, improve grinding force and processing quality, reduce abrasive wear, save energy and increase efficiency, and combine nonylphenol polyoxyethylene ether and fatty alcohol polyoxyethylene ether, It has good water solubility and cleaning ability, increases contact area and has sterilization and disinfection effect.

[0028] The emulsifying dispersant prepared in the present application is a polyoxyethylene modified emulsifying dispersant, which can effectively reduce the contact angle after addition, enhance its emulsifying dispersibility, and reduce the foaming during use. The emulsifying dispersant prepared by the ring-opening reaction of 3,5-di-tert-butyl-4-hydroxybenzyl methyl ether and 2-butyl-2-ethyl oxirane in the present application has a polyoxyethylene ether chain, and the polyoxyethylene ether chain length is moderate, avoiding the problem of difficulty in dissolving in aqueous solutions due to the short length of the polyoxyethylene ether chain. At the same time, the molecular weight is small, avoiding the formation of particulate impurities after addition, which is beneficial to reducing the defective rate of semiconductor slices, and does not contain fluorine, etc., is non-toxic and biodegradable, and is environmentally friendly.

[0029] The precipitating agent selected in the present application is at least one of diethylenetriaminepentaacetic acid, N-hydroxyethylethylaminetriacetic acid, ethylene glycol-bis-(B-aminoethyl ether)-N,N-tetraacetic acid, trisodium methylglycine diacetate, and disodium EDTA, which can complex with the cutting powder and flocculate into a mud mass for sedimentation; the selected bactericide also includes triazine or potassium sorbate, which can further inhibit the production of bacteria, maintain the performance of the cutting fluid, and prevent deterioration; the corrosion inhibitor is selected to be at least one of benzotriazole, silicate, and borate, which has good adhesion to the substrate and can effectively inhibit the occurrence of pitting corrosion; the rust inhibitor is selected to be at least one of sebacic acid, neodecanoic acid, tribasic acid, and N-amidoaminocaproic acid, which has good corrosion and rust prevention properties, reduces the problem of rust and corrosion of silicon wafer cutting equipment, and greatly improves the service life of the cutting equipment and the yield of silicon wafers. DETAILED DESCRIPTION

[0030] The following will be described clearly and completely in conjunction with the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0031] Embodiment 1 The preparation method of the special wetting agent comprises the following steps:

[0032] Fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene (10) ether in a mass ratio of 1.2:1 were added into a reaction kettle, heated and stirred to melt, and then the temperature was raised to 70° C., and then concentrated sulfuric acid was slowly added under stirring and kept at 90° C. for 2 hours to obtain a sulfated solution;

[0033] The sulfated solution was poured into an aqueous solution of caustic soda to adjust the pH to 6-7, and then sodium fatty alcohol polyoxyethylene ether sulfate was added, with the mass ratio of sodium fatty alcohol polyoxyethylene ether sulfate to fatty alcohol polyoxyethylene ether being 1.1:1. The mixture was stirred and heated to 60°C to completely dissolve the sodium fatty alcohol polyoxyethylene ether sulfate to obtain a composite wetting agent.

[0034] Embodiment 2 The preparation method of the special wetting agent comprises the following steps:

[0035] Fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene (10) ether in a mass ratio of 1.1:1 were added into a reaction kettle, heated and stirred to melt, and then the temperature was raised to 70°C, and then concentrated sulfuric acid was slowly added under stirring and kept at 90°C for 2 hours to obtain a sulfated solution;

[0036] The above-mentioned sulfated solution is poured into an aqueous solution of caustic soda to adjust the pH to 6-7, and then fatty alcohol polyoxyethylene ether sodium sulfate is added, and the mass ratio of fatty alcohol polyoxyethylene ether sodium sulfate to fatty alcohol polyoxyethylene ether is 1.2:1. Stir and heat to 60°C to completely dissolve the fatty alcohol polyoxyethylene ether sodium sulfate to obtain a composite wetting agent.

[0037] The preparation method of the emulsifying dispersant of embodiment 3 comprises the following steps:

[0038] Dissolving 3,5-di-tert-butyl-4-hydroxybenzyl methyl ether in acetonitrile and adding the mixture into a reaction container, wherein the mass ratio of 3,5-di-tert-butyl-4-hydroxybenzyl methyl ether to acetonitrile is 1:3;

[0039] Triethylamine and potassium hydroxide are added into a reaction container as catalysts, and the air in the reaction container is replaced by nitrogen;

[0040] The reaction container was heated to 80° C., and 2-butyl-2-ethyl oxirane was introduced to react, and the molar ratio of 3,5-di-tert-butyl-4-hydroxybenzyl methyl ether to 2-butyl-2-ethyl oxirane was 1:10;

[0041] After reacting for 48 hours, the temperature of the reaction container was lowered to 15° C., rotary evaporation was performed, and extraction was performed with ethyl acetate. Rotary evaporation was then performed again, and an emulsified dispersant was obtained after drying.

[0042] Embodiment 4 The preparation method of the cutting fluid for semiconductor material comprises the following steps:

[0043] Add 99 mL of deionized water into the reactor, control the temperature at 40-60°C, and sequentially add 20 g of oleic acid polyethylene glycol diester, 10 g of cyclobutane sulfone, 10 g of polyether extrusion lubricant, 30 g of the characteristic wetting agent prepared in Example 1, 15 g of the emulsifying dispersant prepared in Example 3, 20 g of sebacic acid, 30 g of benzotriazole, 1 g of triazine and 15 g of diethylenetriaminepentaacetic acid, and keep warm for 3-9 hours under stirring conditions to obtain a cutting fluid for semiconductor materials.

[0044] Embodiment 5 The method for preparing a cutting fluid for semiconductor materials comprises the following steps:

[0045] Add 99 mL of deionized water into the reactor, control the temperature at 40-60°C, and sequentially add 20 g of oleic acid polyethylene glycol diester, 10 g of cyclobutane sulfone, 10 g of polyether extrusion lubricant, 30 g of the characteristic wetting agent prepared in Example 2, 15 g of the emulsifying dispersant prepared in Example 3, 20 g of sebacic acid, 30 g of benzotriazole, 1 g of triazine and 15 g of diethylenetriaminepentaacetic acid, and keep warm for 3-9 hours under stirring conditions to obtain a cutting fluid for semiconductor materials.

[0046] Embodiment 6 The method for preparing a cutting fluid for semiconductor materials comprises the following steps:

[0047] Add 99 mL of deionized water into the reactor, control the temperature at 40-60°C, and sequentially add 20 g of ricinoleic acid ammonium salt, 20 g of cyclopentane sulfone, 10 g of polyether extrusion lubricant, 30 g of the characteristic wetting agent prepared in Example 1, 15 g of the emulsifying dispersant prepared in Example 3, 20 g of sebacic acid, 30 g of benzotriazole, 1 g of triazine and 15 g of diethylenetriaminepentaacetic acid, and keep warm for 3-9 h under stirring to obtain a cutting fluid for semiconductor materials.

[0048] Comparative Example 1 A method for preparing a cutting fluid for semiconductor materials comprises the following steps:

[0049] Compared with Example 4, Comparative Example 3 only replaces the mass of the special wetting agent prepared in Example 1 added in Example 4 with a mixed solution of fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene (10) ether, and the remaining components and preparation method are exactly the same as those of Example 4.

[0050] Comparative Example 2 The preparation method of the cutting fluid for semiconductor materials comprises the following steps:

[0051] Compared with Example 4, Comparative Example 3 only replaces the mass of the emulsifying dispersant prepared in Example 1 added in Example 4 with the commonly used dispersant polyethylene glycol, and the other components and preparation method are completely consistent with Example 4.

[0052] Comparative Example 3 uses imported common brittle and hard material cutting fluid products for testing.

[0053] Performance Testing

[0054] Lubrication performance: According to the tapping torque (Micro-Tap) lubricity test method, the cutting fluids prepared in Examples 4-6 and Comparative Examples 1-3 were prepared into 5wt% aqueous solutions for testing. The higher the relative efficiency, the better the lubricity (test conditions: M4 extrusion tap, depth 10mm, rotation speed 1000rpm); the test results are shown in the table below;

[0055] Residual rate: The cutting fluids prepared in Examples 4-6 and Comparative Examples 1-3 were prepared into 5wt% aqueous solutions, and the test pieces were immersed in the dilution to be tested. Three parallel experiments were performed for each group, and the pieces were hung and allowed to stand in an oven at 40°C for 16 hours. The average residual rate was calculated by weighing method. The test results are shown in the table below.

[0056] Dynamic surface tension: At 25°C, the cutting fluids prepared in Examples 4-6 and Comparative Examples 1-3 were prepared into 1 wt% aqueous solutions, and the surface tension values ​​thereof were measured at room temperature using a fully automatic QBZY surface tension meter; the test results are shown in the table below;

[0057] Chemical oxygen demand (COD): 100 wt % of the cutting fluid prepared in Examples 4-6 and Comparative Examples 1-3 was tested by spectrophotometry, and 3 parallel experiments were performed for each group; the test results are shown in the table below;

[0058]

[0059] As can be seen from the above table, the semiconductor cutting fluids prepared in Examples 4-6 of the present application have lower COD, excellent permeability, extremely high lubricity and lower residual rate. In Comparative Example 1, fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene (10) ether were directly used as special wetting agents, and the measured COD, lubricity and permeability were all reduced. In Comparative Example 2, polyethylene glycol was selected as an emulsifying dispersant, and the average residual rate was higher. In Comparative Example 3, a cutting fluid product for brittle and hard materials commonly used on the market was used, and the measured performance in all aspects was lower than that of the cutting fluid prepared in the present application.

[0060] The above is a detailed description of an embodiment of the present invention, but the content is only a preferred embodiment of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A cutting fluid for semiconductor materials, characterized in that: At least the following raw materials by weight:

2. A cutting fluid for semiconductor materials according to claim 1, characterized in that: The water-soluble lubricant is one or more of polyethylene glycol laurate, polyethylene glycol monooleate, polyethylene glycol diester, dimer acid amide, dimer acid potassium, laurate amine salt, ricinoleic acid ammonium salt, and tetrameric ricinoleic acid ammonium salt.

3. The cutting fluid for semiconductor materials according to claim 1, characterized in that: The anti-wear lubricant is one or more of benzotriazole, methylbenzotriazole or sulfolane.

4. The cutting fluid for semiconductor materials according to claim 1, characterized in that: The extreme pressure lubricant is at least one of polyether extreme pressure lubricants.

5. The cutting fluid for semiconductor materials according to claim 1, characterized in that: The special wetting agent is a composite wetting agent.

6. A cutting fluid for semiconductor materials according to claim 5, characterized in that: The preparation method of the composite wetting agent comprises at least the following steps: Add fatty alcohol polyoxyethylene ether and nonylphenol polyoxyethylene (10) ether in a mass ratio of 1-1.5:1 into a reaction kettle, heat and stir to melt, then heat to 70-80° C., then slowly add concentrated sulfuric acid under stirring and keep at 80-90° C. for 2-4 hours to obtain a sulfated solution; The sulfated solution is poured into an alkaline aqueous solution to adjust the pH to 6-7, and then sodium fatty alcohol polyoxyethylene ether sulfate is added, and the mass ratio of the sodium fatty alcohol polyoxyethylene ether sulfate to the fatty alcohol polyoxyethylene ether is 1-1.2:1, and the mixture is stirred and heated to 60-70°C to completely dissolve the sodium fatty alcohol polyoxyethylene ether sulfate to obtain a composite wetting agent.

7. The cutting fluid for semiconductor materials according to claim 1, characterized in that: The emulsifying and dispersing agent is a polyoxyethylene modified emulsifying and dispersing agent.

8. The cutting fluid for semiconductor materials according to claim 7, characterized in that: The preparation method of the polyoxyethylene modified emulsifying dispersant comprises at least the following steps: Dissolving 3,5-di-tert-butyl-4-hydroxybenzyl methyl ether in acetonitrile and adding the mixture into a reaction container, wherein the mass ratio of the 3,5-di-tert-butyl-4-hydroxybenzyl methyl ether to the acetonitrile is 1:2-4; Adding a catalyst into a reaction vessel and replacing the air in the reaction vessel with an inert gas; The reaction container is heated to 60-90° C., and 2-butyl-2-ethyl oxirane is introduced to react, wherein the molar ratio of the 3,5-di-tert-butyl-4-hydroxybenzyl methyl ether to the 2-butyl-2-ethyl oxirane is 1:10; After reacting for 40-60 hours, the temperature of the reaction container is lowered to 15-30° C., rotary evaporation is performed, and then extraction is performed with dichloromethane or ethyl acetate. Rotary evaporation is then performed again, and after drying, a polyoxyethylene modified emulsifying dispersant is obtained.

9. The cutting fluid for semiconductor materials according to claim 1, characterized in that: The rust inhibitor is one or a mixture of sebacic acid, neodecanoic acid, tribasic acid, and N-amidoaminocaproic acid; the corrosion inhibitor is one or a mixture of benzotriazole, silicate, and borate; the bactericide is triazine and / or potassium sorbate; and the precipitant is one or a mixture of diethylenetriaminepentaacetic acid, N-hydroxyethylethylaminetriacetic acid, ethylene glycol-bis-(B-aminoethyl ether)-N,N-tetraacetic acid, trisodium methylglycine diacetate, and disodium EDTA.

10. A method for preparing a cutting fluid for semiconductor materials according to any one of claims 1 to 9, characterized in that: The method comprises at least the following preparation steps: adding deionized water into a reaction kettle according to the mass percentage of the raw materials, controlling the temperature at 40-60°C, sequentially adding a water-soluble lubricant, an anti-wear lubricant, an extreme pressure lubricant, a special wetting agent, an emulsifying dispersant, a rust inhibitor, a corrosion inhibitor, a bactericide and a sedimentation agent, and keeping the temperature under stirring for 3-9 hours to obtain the cutting fluid for the semiconductor material.

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