Silicon wafer lifting ring, thin film deposition apparatus, and thin film deposition method

Abstract

The application discloses a silicon wafer lifting ring, a thin film deposition device and a thin film deposition method. The silicon wafer lifting ring can be installed in a thin film deposition chamber, the thin film deposition chamber is provided with a heating table for carrying a silicon wafer to perform thin film deposition, and the silicon wafer lifting ring has an expandable inner diameter. During thin film deposition, the silicon wafer lifting ring is configured to expand the expandable inner diameter to a first inner diameter greater than the diameter of the silicon wafer and the diameter of the heating table, and not contact the silicon wafer and the heating table. During lifting of the silicon wafer, the silicon wafer lifting ring is configured to contract the first inner diameter to a second inner diameter smaller than the diameter of the silicon wafer, and is moved to the bottom of the silicon wafer to lift the silicon wafer. The application realizes the effects of uniform thin film deposition thickness of the silicon wafer and high production efficiency by rotating and depositing the silicon wafer in the cavity multiple times through the silicon wafer lifting ring.

Description

Technical Field

[0001] This invention relates to the field of semiconductor thin film deposition technology, and further to a silicon wafer support ring, thin film deposition equipment, and thin film deposition method. Background Technology

[0002] Thin film fabrication processes have a wide range of applications in very large-scale integrated circuit (VLSI) technology. Based on their deposition methods, they can be divided into two main categories: Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD). Plasma-Enhanced Chemical Vapor Deposition (PECVD) is a type of CVD, and its most prominent advantage is its low deposition temperature. PECVD-deposited films exhibit excellent electrical properties, good substrate adhesion, and excellent step coverage. These advantages make it widely used in VLSI, optoelectronic devices, and other fields.

[0003] Thin film deposition equipment is used in semiconductor chip manufacturing to deposit various dielectric layers, metal layers, etc. A silicon wafer is moved into a chamber by a vacuum robot and placed on a heating stage inside the chamber. Then, reactive gases enter the chamber through a shower head located directly above the heating stage. Under radio frequency influence, the reactive gases form plasma, which migrates to the surface of the silicon wafer to react and form a silicide thin film.

[0004] In the process of thin film deposition on silicon wafers, the uniformity of film thickness is a key factor in evaluating the performance of the equipment. The distance between the spray head and the heating stage, the distribution of the spray head's air outlets, the temperature uniformity of the heating stage, and the location of the pump's air outlet all affect the film uniformity. These influencing factors are hardware effects caused by the equipment's structure, which can result in fixed thickness differences at a fixed location on the silicon wafer, such as uneven film thickness distribution.

[0005] The main solutions to the problem of uneven film thickness in the industry are to improve the hardware structure and reduce the deposition rate by changing the process conditions, which can also improve the film uniformity, but will reduce the working efficiency of the equipment.

[0006] Chinese patent application number 201710086741.X, entitled "Thin Film Deposition Method," discloses a substrate thin film deposition method. This method first deposits a first-thickness thin film on the substrate within a thin film deposition chamber. Then, a robotic arm removes the substrate from the chamber, rotates it 180°, and reinserts it for a second-thickness thin film deposition. By repeating these steps multiple times, the different process environments in various circumferential regions of the substrate can be altered to compensate for thickness differences in the deposited films across these regions, thereby improving film thickness uniformity. However, this patented solution involves repeatedly moving the substrate inside and outside the deposition chamber, undoubtedly increasing the silicon wafer thin film deposition process cycle and impacting production efficiency.

[0007] Chinese patent application number 201580013445.6, entitled "Wafer Rotation in a Semiconductor Chamber," discloses an apparatus for processing substrates. This apparatus includes a rotating mechanism and an edge ring within a thin-film deposition chamber. The edge ring is located between the silicon wafer and the heating stage and contacts the bottom edge of the silicon wafer. The edge ring is optionally connected to the rotating mechanism for transmission, allowing the edge ring to rotate the silicon wafer for a second thin-film deposition after one deposition cycle. In other words, this patented solution utilizes an edge ring to rotate the silicon wafer within the deposition chamber, thereby avoiding prolonged thin-film deposition cycles and ensuring production efficiency.

[0008] In the latter patented solution, although the silicon wafer can be rotated through the edge ring in the thin film deposition chamber, the inner diameter of the edge ring needs to be smaller than the diameter of the silicon wafer, and the edge ring is always between the silicon wafer and the heating stage. As a result, the diameter of the heating stage that the silicon wafer contacts is smaller than the diameter of the silicon wafer, and the effect of heat completely covering the entire silicon wafer cannot be achieved. Since the edge of the silicon wafer does not contact the heating stage, the temperature will be lower than that of the center of the silicon wafer, which will affect the uniformity of the thin film deposition thickness on the surface of the silicon wafer again.

[0009] Therefore, in the silicon wafer thin film deposition process, how to improve production efficiency while ensuring the uniformity of silicon wafer thin film deposition thickness is a technical problem that those skilled in the art are eager to solve. Summary of the Invention

[0010] To address the aforementioned technical problems, the purpose of this invention is to improve the efficiency of silicon wafer thin film deposition processes and ensure the uniformity of silicon wafer thin film deposition thickness.

[0011] To achieve the above objectives, the present invention provides a silicon wafer support ring, which can be installed in a thin film deposition chamber. The thin film deposition chamber is provided with a heating stage for supporting silicon wafers for thin film deposition. The silicon wafer support ring has a retractable inner diameter. During thin film deposition, the silicon wafer support ring is configured such that: the retractable inner diameter expands to a first inner diameter larger than the diameter of the silicon wafer and the diameter of the heating stage, without contacting the silicon wafer and the heating stage; during silicon wafer support, the silicon wafer support ring is configured such that: the first inner diameter contracts to a second inner diameter smaller than the diameter of the silicon wafer, and is moved to the bottom of the silicon wafer to support the silicon wafer.

[0012] The present invention also provides a thin film deposition apparatus, including the aforementioned silicon wafer support ring, and further comprising: a thin film deposition chamber for accommodating a silicon wafer; a heating stage located within the thin film deposition chamber; a spray head located above the heating stage for introducing reactive gases into the thin film deposition chamber; and a plurality of support columns for supporting the silicon wafer.

[0013] The present invention also provides a thin film deposition method, comprising:

[0014] Step S10: The heating stage is vertically positioned below the silicon wafer support ring, the support column passes through the heating stage and rises above the silicon wafer support ring, the robot moves the silicon wafer into the thin film deposition chamber, and the silicon wafer is supported by the support column;

[0015] Step S11: The height of the support column remains unchanged, and the heating platform is raised so that the silicon wafer is placed on the heating platform;

[0016] Step S12: Introduce reactive gas through the spray head to perform a single thin film deposition;

[0017] Step S13: Control the support column to maintain a constant height with the silicon wafer, and lower the heating platform to below the silicon wafer support ring;

[0018] Step S14: Control the retractable inner diameter of the silicon wafer support ring to decrease to a second inner diameter smaller than the diameter of the silicon wafer;

[0019] Step S15: Control the support column to drive the silicon wafer down until the silicon wafer is supported by the silicon wafer lifting ring, and the support column separates from the silicon wafer;

[0020] Step S16: The heating platform remains stationary, and the silicon wafer lifting ring rotates the silicon wafer to a preset angle; or, the silicon wafer lifting ring carrying the silicon wafer remains stationary, and the heating platform rotates to a preset angle;

[0021] Step S17: Control the support column to rise until it lifts the silicon wafer off the silicon wafer lifting ring;

[0022] Step S18: Control the retractable inner diameter of the silicon wafer support ring to expand to a first inner diameter larger than the diameter of the silicon wafer and the diameter of the heating platform;

[0023] Step S19: Control the support column to maintain a constant height with the silicon wafer, and raise the heating stage until the silicon wafer is placed on the heating stage to perform the next thin film deposition.

[0024] In one embodiment, the thin film deposition method includes:

[0025] Step S20: The silicon wafer lifting ring is located vertically below the heating stage, the support column passes through the heating stage and rises above the heating stage, the robot moves the silicon wafer into the thin film deposition chamber, and the silicon wafer is supported by the support column;

[0026] Step S21: The height of the heating platform remains unchanged, and the support column is lowered to place the silicon wafer on the heating platform; or, the height of the support column remains unchanged, and the heating platform is raised to place the silicon wafer on the heating platform.

[0027] Step S22: Introduce reactive gas through the spray head to perform a single thin film deposition;

[0028] Step S23: Control the support column to drive the silicon wafer to rise, and the silicon wafer lifting ring rises to the space between the silicon wafer and the heating platform; or, the support column supports the silicon wafer, the heating platform descends, and the silicon wafer lifting ring rises to the space between the silicon wafer and the heating platform.

[0029] Step S24: Control the retractable inner diameter of the silicon wafer support ring to decrease to a second inner diameter smaller than the diameter of the silicon wafer;

[0030] Step S25: Control the support column to drive the silicon wafer to descend until the silicon wafer is supported by the silicon wafer lifting ring, and the support column separates from the silicon wafer; or, the silicon wafer lifting ring rises until it lifts the silicon wafer and drives the silicon wafer to continue to rise, and the support column separates from the silicon wafer.

[0031] Step S26: The heating platform remains stationary, and the silicon wafer lifting ring rotates the silicon wafer to a preset angle; or, the silicon wafer lifting ring and the silicon wafer remain stationary, and the heating platform rotates to a preset angle;

[0032] Step S27: Control the support column to rise until it lifts the silicon wafer off the silicon wafer lifting ring, or control the silicon wafer lifting ring to fall until the support column lifts the silicon wafer off the silicon wafer lifting ring;

[0033] Step S28: Control the retractable inner diameter of the silicon wafer support ring to expand to a first inner diameter larger than the diameter of the silicon wafer and the diameter of the heating platform;

[0034] Step S29: Control the silicon wafer lifting ring to move below the heating stage, and the support column drives the silicon wafer to descend or the heating stage to rise until the silicon wafer is placed on the heating stage to perform the next thin film deposition.

[0035] In one embodiment, the thin film deposition method includes:

[0036] Step S30: The heating stage is vertically positioned below the silicon wafer support ring, the support column passes through the heating stage and rises above the silicon wafer support ring, the robot moves the silicon wafer into the thin film deposition chamber, and the silicon wafer is supported by the support column;

[0037] Step S31: The height of the support column remains unchanged, and the heating platform is raised so that the silicon wafer is placed on the heating platform;

[0038] Step S32: Introduce reactive gas through the spray head to perform a single thin film deposition;

[0039] Step S33: Control the support column to maintain a constant height with the silicon wafer, and lower the heating platform to below the silicon wafer support ring;

[0040] Step S34: Control the retractable inner diameter of the silicon wafer support ring to shrink to a second inner diameter smaller than the diameter of the silicon wafer;

[0041] Step S35: Control the silicon wafer lifting ring to rise until the silicon wafer is supported by the silicon wafer lifting ring and the support column separates from the silicon wafer;

[0042] Step S36: The heating platform remains stationary, and the silicon wafer lifting ring rotates the silicon wafer to a preset angle; or, the silicon wafer lifting ring and the silicon wafer remain stationary, and the heating platform rotates to a preset angle;

[0043] Step S37: Control the silicon wafer lifting ring to drive the silicon wafer down until the silicon wafer is supported by the support column, so that the silicon wafer is separated from the silicon wafer lifting ring;

[0044] Step S38: Control the retractable inner diameter of the silicon wafer support ring to expand to a first inner diameter larger than the diameter of the silicon wafer and the diameter of the heating platform;

[0045] Step S39: Control the silicon wafer and the support pillar to maintain a constant height, and raise the heating stage until the silicon wafer is placed on the heating stage to perform the next thin film deposition.

[0046] Compared with the prior art, the present invention has at least one of the following beneficial effects:

[0047] 1. The silicon wafer support ring design of this invention differs from existing technologies. In existing technologies, the inner diameter of the ceramic ring is smaller than the diameter of the silicon wafer to support and transfer heat. Since the ceramic ring is positioned between the heating stage and the silicon wafer, the diameter of the heating stage in contact with the silicon wafer is smaller than the silicon wafer diameter, failing to achieve complete heat coverage of the entire silicon wafer. The edges of the silicon wafer, not in contact with the heating stage, will have a lower temperature than the center. In this invention, during thin film deposition, the inner diameter of the silicon wafer support ring is larger than the diameters of both the silicon wafer and the heating stage. The heat from the heating stage to the edges of the silicon wafer is not blocked by the silicon wafer support ring, allowing the heat from the heating stage to cover the entire silicon wafer surface, ensuring the uniformity of the silicon wafer deposition thickness.

[0048] 2. This invention proposes a thin film deposition method. This method solves the problem of uniformity of the deposited thin film inherent in mechanical systems by adding a novel silicon wafer support ring that rotates multiple times in the cavity and deposits multiple times. It does not change the original hardware of the machine, such as the structure of the spray head, heating table heating device, air extraction port, etc., and does not reduce the thin film deposition rate.

[0049] 3. By installing a silicon wafer support ring with a variable inner diameter in the thin film deposition chamber, the silicon wafer can change its position relative to the heating stage in the thin film deposition chamber, which not only ensures production efficiency but also improves the uniformity of thin film deposition thickness.

[0050] 4. By rotating the silicon wafer relative to the heating stage during the interval between two adjacent thin film depositions, and performing thin film deposition multiple times, the problem of uneven thin film deposition caused by the different reaction effects of the spray head on different areas of the silicon wafer can be eliminated, and the problem of uneven thin film deposition caused by uneven temperature inside the heating stage can also be improved. Attached Figure Description

[0051] The preferred embodiments will now be described in a clear and easy-to-understand manner, in conjunction with the accompanying drawings, to further explain the above-mentioned characteristics, technical features, advantages, and implementation methods of the present invention.

[0052] Figure 1 This is a schematic diagram of the structure of a thin film deposition apparatus provided in one embodiment of this application;

[0053] Figure 2 This is a top view schematic diagram of a silicon wafer support ring structure provided in one embodiment of this application;

[0054] Figure 3 yes Figure 2 A schematic diagram of the cross-sectional structure along the aa direction;

[0055] Figure 4 yes Figure 2 A schematic diagram of the silicon wafer support ring with its inner diameter reduced.

[0056] Figure 5 yes Figure 4 A schematic diagram of the cross-sectional structure along the bb direction;

[0057] Figure 6 This is a schematic diagram of the main steps of a thin film deposition method provided in one embodiment of this application;

[0058] Figure 7A This is a schematic diagram of the main steps of a thin film deposition method provided in one embodiment of this application;

[0059] Figure 7B yes Figure 7A Another implementation of the provided thin film deposition method;

[0060] Figure 8 This is a schematic diagram of the main steps of a thin film deposition method provided in one embodiment of this application;

[0061] Figure 9 This is a flowchart of a thin film deposition method provided in one embodiment of this application;

[0062] Figure 10 This is a flowchart of a thin film deposition method provided in one embodiment of this application;

[0063] Figure 11 This is a flowchart of a thin film deposition method provided in one embodiment of this application;

[0064] Figure 12 This is a schematic diagram of the structure of a thin film deposition apparatus provided in one embodiment of this application;

[0065] Figure 13 This is a schematic diagram of the structure of a thin film deposition apparatus provided in one embodiment of this application;

[0066] Figure 14 This is a schematic diagram of the structure of a silicon wafer support ring provided in one embodiment of this application;

[0067] Figure 15 yes Figure 14 A schematic diagram of the silicon wafer support ring with its inner diameter reduced.

[0068] Figure 16 yes Figure 15 A schematic diagram of the cross-sectional structure along the cc direction;

[0069] Figure 17 yes Figure 16 A schematic diagram of the local structure at point d. Detailed Implementation

[0070] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the specific implementation methods of the present invention will be described below with reference to the accompanying drawings. Obviously, the drawings described below are merely some embodiments of the present invention. For those skilled in the art, other drawings and other implementation methods can be obtained based on these drawings without any creative effort.

[0071] To keep the drawings concise, each figure only schematically shows the parts relevant to the invention, and these do not represent the actual structure of the product. Furthermore, to facilitate understanding, in some figures, only one of components with the same structure or function is schematically depicted, or only one is labeled. In this document, "one" not only means "only one," but can also mean "more than one."

[0072] In this document, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0073] Furthermore, in the description of this application, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0074] Example 1

[0075] like Figures 1 to 5 , Figures 14 to 17 As shown, Embodiment 1 provides a silicon wafer support ring 120, which can be installed in the thin film deposition chamber 110 of a semiconductor thin film deposition apparatus 100. It can also be used in the cleaning chamber of a semiconductor cleaning apparatus, and in other equipment requiring the support of silicon wafers. The silicon wafer support ring 120, the silicon wafer 200, and the heating stage 130 located within the thin film deposition chamber 110 are preferably arranged with their central axes overlapping.

[0076] The main feature of the silicon wafer support ring 120 is its expandable inner diameter, which will play an important role in the silicon wafer thin film deposition process.

[0077] To eliminate the influence of factors such as the intensity variation of the emitted reaction gas from the spray head 160 in different areas and the temperature variation in different areas of the heating stage 130 on the uniformity of the thin film deposition thickness on the silicon wafer surface in the thin film deposition equipment 100, in this embodiment, after the silicon wafer 200 completes one thin film deposition, the silicon wafer 200 is lifted and rotated relative to the heating stage 130 by a preset angle before returning to the heating stage 130 to perform the next thin film deposition, thus changing the circumferential process environment. The above process is repeated at least once, and the preset angle can be set to any angle such as 180 degrees, 90 degrees, or 45 degrees.

[0078] In the above process, the process can be divided into two stages depending on whether the silicon wafer 200 is actually being processed: 1. During the actual thin film deposition of the silicon wafer 200; 2. During the period between two adjacent thin film depositions, the silicon wafer 200 is lifted or rotated to support it. Specifically, during the thin film deposition period, to prevent the silicon wafer support ring 120 from obstructing heat conduction between the edge of the heating stage 130 and the edge of the silicon wafer 200, this application expands the inner diameter of the silicon wafer support ring 120 to a first inner diameter D1201 larger than the diameters of the silicon wafer 200 and the heating stage 130, so that it moves outside the silicon wafer 200 and the heating stage 130 and does not contact them. This prevents the silicon wafer support ring 120 from remaining between the silicon wafer 200 and the heating stage 130, thus avoiding affecting heat conduction to the edge of the silicon wafer 200. Preferably, the silicon wafer lifting ring 120 can be moved below the heating stage 130, at which time the heating effect of the middle and edge of the heating stage 130 on the silicon wafer 200 can be kept consistent; during the lifting of the silicon wafer, in order to ensure that the silicon wafer 200 can be supported by the silicon wafer lifting ring 120, the inner diameter of the silicon wafer lifting ring 120 is reduced to a second inner diameter D1202 smaller than the diameter of the silicon wafer 200, and moved to the bottom of the silicon wafer 200 to lift the silicon wafer 200.

[0079] As can be seen from the above steps, the expandable inner diameter D120 of the silicon wafer support ring 120 can vary between the first inner diameter D1201 and the second inner diameter D1202.

[0080] Specifically, such as Figures 2 to 5 , Figures 14 to 17 As shown, the silicon wafer support ring 120 includes a support ring body 121, several telescopic components 122, a transmission component 123, and a drive device 150. For example... Figure 3 As shown, the supporting ring body 121, several telescopic components 122, and transmission components 123 are arranged sequentially from bottom to top. To ensure that the silicon wafer supporting ring 120 can move up and down unimpeded in the retracted state, the supporting ring body 121 has a ring-shaped structure and a third inner diameter D121 larger than the diameter of the silicon wafer 200 and the heating stage 130. The third inner diameter D121 is less than or equal to the first inner diameter D1201. Several telescopic components 122 are slidably connected to the supporting ring body 121 and are arranged in a ring, collectively defining the inner diameter of the silicon wafer supporting ring 120. Figure 2 As shown, the diameter of the inscribed circle of the plurality of telescopic members 122 serves as the expandable inner diameter D120 of the silicon wafer support ring 120. Furthermore, the transmission member 123, acting as a component to change the sliding state of the telescopic members 122, is connected to the telescopic members 122 and applies a radial force to the telescopic members 122 along the support ring body 121, causing the telescopic members 122 to slide towards the center of the support ring body 121, thereby changing the expandable inner diameter D120 of the silicon wafer support ring 120. The driving device 150 drives the transmission member 123 and the support ring body 121. According to this embodiment, each telescopic member 122 can simultaneously converge and slide towards the center of the support ring body 121 to reduce the expandable inner diameter D120, or it can disperse and slide away from the center of the support ring body 121 to expand the expandable inner diameter D120.

[0081] This application does not limit the number or location distribution of the telescopic components 122. In Embodiment 1, as... Figure 2 As shown, seven telescopic components 122 are evenly distributed on the annular upper surface of the lifting ring body 121.

[0082] like Figure 2 , Figure 3 The diagram shows the structure of the silicon wafer support ring 120 in the state where the retractable inner diameter D120 has not been reduced. At this time, each telescopic component 122 slides into the gap between the support ring body 121 and the transmission component 123 on the opposite side. The retractable inner diameter D120 of the silicon wafer support ring 120 is a first inner diameter D1201 larger than the diameter of the silicon wafer 200 or the heating table 130. Figure 4 , Figure 5 The diagram shows the structure of the silicon wafer support ring 120 in the state of reducing the retractable inner diameter D120. At this time, each telescopic component 122 slides outside the gap between the support ring body 121 and the transmission component 123 on the opposite side. The retractable inner diameter D120 of the silicon wafer support ring 120 is a second inner diameter D1202 that is smaller than the diameter of the silicon wafer 200.

[0083] refer to Figure 3 and Figure 5As shown, in one embodiment of the silicon wafer support ring 120, each telescopic member 122 can be designed as a sheet-like structure and is respectively hinged to the support ring body 121 via a hinge shaft 126. The hinge shaft 126 is aligned with the thickness direction of the support ring body 121, so that each telescopic member 122 can rotate towards the center of the support ring body 121 within the plane of the support ring body 121. Furthermore, the surface of the telescopic member 122 is provided with a protrusion 124 connected to the transmission member 123. The transmission member 123 is configured as a ring-shaped structure that can rotate coaxially relative to the support ring body 121. The surface of the transmission member 123 is provided with several sliding grooves 125, and each protrusion 124 is slidably located within a sliding groove 125. When the transmission member 123 is rotated, the sliding groove 125 can generate a force on the protrusion 124, causing the telescopic member 122 to slide radially along the support ring body 121.

[0084] like Figure 2 and Figure 4 As shown, the sliding groove 125 is arc-shaped and gradually extends outward from the center of the transmission member 123. Each sliding groove 125 is arranged symmetrically around the center of the transmission member 123. The protrusion 124 is cylindrical and its diameter is slightly smaller than the width of the sliding groove 125, so that the inner side of the sliding groove 125 (towards the central axis of the lifting ring body 121) can apply a force to the side of the protrusion 124 during the rotation of the transmission member 123.

[0085] Furthermore, as another embodiment of the aforementioned silicon wafer support ring 120, a sliding groove 125 can be formed on the surface of the telescopic member 122 (facing the transmission member 123), and a protrusion 124 that cooperates with it can be provided on the side of the transmission member 123 facing the telescopic member 122. That is, a sliding groove 125 is formed on the surface of the telescopic member 122, the transmission member 123 is configured as a ring structure that can rotate coaxially with respect to the support ring body 121, and the surface of the transmission member 123 is provided with a plurality of protrusions 124, each of which is slidably located in the sliding groove 125. Rotating the transmission member 123 can cause the protrusions 124 to exert a force on the sliding groove 125, causing the telescopic member 122 to slide radially along the support ring body 121.

[0086] It should be noted that the silicon wafer support ring 120 can be used with the specification attached to this embodiment. Figure 1 The structure is circular, but can also be designed in various shapes such as triangular or square rings. The telescopic component 122 and the lifting ring body 121 are made of ceramic materials with the same or similar coefficients of thermal expansion, so that the deformation of the telescopic component 122 and the lifting ring body 121 remains consistent during heating on the heating table 130, reducing the impact of temperature changes on the fitting accuracy between the components.

[0087] like Figure 3 and Figure 5As shown, the drive device 150 includes a first gear 151, a second gear 152, a first motor 153, and a second motor 154. The first gear 151 is mounted on the first motor 153 and meshes with the outer side of the transmission member 123, driving the transmission member 123 to rotate. This causes the telescopic member 122 to slide towards or away from the center of the lifting ring body 121, thereby changing the telescopic inner diameter D120 of the silicon wafer lifting ring 120. The second gear 152 is mounted on the second motor 154 and meshes with the outer side of the lifting ring body 121, driving the lifting ring body 121 to rotate, thus causing the silicon wafer lifting ring 120 to rotate as a whole, allowing the silicon wafer 200 to rotate relative to the heating table 130. Furthermore, as... Figure 16 The first motor 153 and the second motor 154 are mounted below the first gear 151 and the second gear 152; Figure 17 In the middle, the first motor 153 and the second motor 154 are mounted on the side of the first gear 151 and the second gear 152.

[0088]

Example 2

[0089] like Figure 1 , Figure 12 and Figure 13 As shown, Embodiment 2 provides a thin film deposition apparatus 100, which mainly includes a thin film deposition chamber 110, and a spray head 160, a silicon wafer lifting ring 120, a heating stage 130, and a support column 140 located within the thin film deposition chamber 110. The thin film deposition apparatus 100 is preferably a plasma-enhanced chemical vapor deposition (PECVD) apparatus.

[0090] Specifically, the heating stage 130 is used to support the silicon wafer 200 and regulate the temperature of the silicon wafer 200 during thin film deposition. The reaction gas enters the thin film deposition chamber 110 through the spray head 160 located directly above the heating stage 130, and forms plasma under the action of radio frequency. The reaction ions migrate to the surface of the silicon wafer 200 to react and form a silicide thin film. The silicon wafer support ring 120 can adopt any of the structural forms in the above embodiment 1.

[0091] Preferably, the support column 140 is vertically and vertically disposed along the thickness direction of the heating stage 130 to support the silicon wafer 200. Furthermore, the driving device 150 also includes a heating stage driving device 131 and a support column driving device (not shown in the figure). The heating stage driving device 131 drives the heating stage 130 to rotate or rise, and the support column driving device drives the support column 140 to rise and fall. The support column 140 can work in conjunction with the silicon wafer lifting ring 120 during the thin film deposition process of the silicon wafer 200; its specific working principle will be described in subsequent embodiments.

[0092]

Example 3

[0093] like Figure 6and Figure 9 The diagram shown is a flowchart and schematic diagram of the main steps of a thin film deposition method provided in Embodiment 3. In this embodiment, the height of the pre-set silicon wafer support ring 120 remains constant, and the heating stage 130 moves up and down; the heating stage 130 does not rotate, and the silicon wafer support ring 120 drives the silicon wafer 200 to rotate to a pre-set angle, or the silicon wafer support ring 120 does not rotate, and the heating stage 130 rotates to a pre-set angle.

[0094] Specifically, the thin film deposition method provided in this embodiment includes the following steps:

[0095] Step S10: The heating stage 130 is vertically positioned below the silicon wafer support ring 120. The support column 140 passes through the heating stage 130 and rises above the silicon wafer support ring 120. The robot moves the silicon wafer 200 into the thin film deposition chamber 110 and supports the silicon wafer 200 by the support column 140.

[0096] Step S11: The height of the support column 140 remains unchanged, and the heating stage 130 is raised so that the silicon wafer 200 is placed on the heating stage 130;

[0097] Step S12: Introduce reactive gas through spray head 160 to perform a thin film deposition;

[0098] Step S13: Keep the height of the support column 140 and the silicon wafer 200 constant, and lower the heating stage 130 to below the silicon wafer lifting ring 120;

[0099] Step S14: Control the retractable inner diameter of the silicon wafer support ring 120 to decrease to a second inner diameter D1202 that is smaller than the diameter of the silicon wafer 200;

[0100] Step S15: Control the support column 140 to drive the silicon wafer 200 down until the silicon wafer 200 is supported by the silicon wafer lifting ring 120, and the support column 140 separates from the silicon wafer 200.

[0101] Step S16: The heating stage 130 remains stationary, and the silicon wafer lifting ring 120 rotates the silicon wafer 200 to a preset angle; or, the silicon wafer lifting ring 120 carrying the silicon wafer 200 remains stationary, and the heating stage 130 rotates to a preset angle.

[0102] Step S17: Control the support column 140 to rise until the silicon wafer 200 is lifted off the silicon wafer lifting ring 120;

[0103] Step S18: Control the expansion of the retractable inner diameter of the silicon wafer support ring 120 to a first inner diameter D1201 that is larger than the diameter of the silicon wafer 200 and the diameter of the heating stage 130;

[0104] Step S19: Keep the support column 140 and silicon wafer 200 at the same height, and raise the heating stage 130 until the silicon wafer 200 is placed on the heating stage 130 to carry out the next thin film deposition.

[0105] In step S14, the drive device 150 can drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate, so that the multiple telescopic members 122 slide toward the center of the lifting ring body 121, thereby reducing the expandable inner diameter of the silicon wafer lifting ring 120; in step S18, the drive device 150 can drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate in the opposite direction, so that the multiple telescopic members 122 slide away from the center of the lifting ring body 121, thereby expanding the expandable inner diameter of the silicon wafer lifting ring 120.

[0106] It should be noted that in the accompanying drawings of this embodiment, the transmission component 123 in step S14 rotates clockwise, and the transmission component 123 in step S18 rotates counterclockwise. Alternatively, the opposite rotation scheme can be adopted depending on the specific structure of the silicon wafer support ring 120.

[0107]

Example 4

[0108] like Figure 7A , Figure 7B and Figure 10 The diagram shown is a flowchart and schematic diagram of the main steps of a thin film deposition method provided in Example 4.

[0109] Specifically, the thin film deposition method provided in this embodiment includes the following steps:

[0110] Step S20: The silicon wafer lifting ring 120 is located below the heating stage 130 in a height-adjustable manner. The support column 140 passes through the heating stage 130 and rises above the heating stage 130. The robot moves the silicon wafer 200 into the thin film deposition chamber 110 and supports the silicon wafer 200 by the support column 140.

[0111] Step S21: As Figure 7A The height of the heating stage 130 remains constant, while the support column 140 is lowered to allow the silicon wafer 200 to be placed on the heating stage 130, or, as shown... Figure 7B The height of the support column 140 remains unchanged, while the heating stage 130 is raised so that the silicon wafer 200 is placed on the heating stage 130.

[0112] Step S22: Introduce reactive gas through spray head 160 to perform a thin film deposition;

[0113] Step S23: As Figure 7A The control support column 140 shown drives the silicon wafer 200 to rise, and the silicon wafer lifting ring 120 rises to between the silicon wafer 200 and the heating platform 130, or, as shown Figure 7BThe support column 140 supports the silicon wafer 200, the heating stage 130 descends, and the silicon wafer lifting ring 120 rises between the silicon wafer 200 and the heating stage 130. During this step, the heating stage 130 passes through the inner ring of the silicon wafer lifting ring 120.

[0114] Step S24: Control the retractable inner diameter of the silicon wafer support ring 120 to decrease to a second inner diameter D1202 that is smaller than the diameter of the silicon wafer 200;

[0115] Step S25: As Figure 7A The control support column 140 shown drives the silicon wafer 200 to descend until the silicon wafer 200 is supported by the silicon wafer lifting ring 120, at which point the support column 140 separates from the silicon wafer 200, or, as shown... Figure 7B The silicon wafer lifting ring 120 rises until it lifts the silicon wafer 200 and drives the silicon wafer 200 to continue rising, and the support column 140 separates from the silicon wafer 200.

[0116] Step S26: The heating stage 130 remains stationary, and the silicon wafer lifting ring 120 rotates the silicon wafer 200 to a preset angle; or the silicon wafer lifting ring 120 and the silicon wafer 200 remain stationary, and the heating stage 130 rotates to a preset angle.

[0117] Step S27: As Figure 7A The control support column 140 is raised until it lifts the silicon wafer 200 off the silicon wafer lifting ring 120, or, as shown Figure 7B The control ring 120 is lowered until the support column 140 lifts the silicon wafer 200 off the silicon wafer 120.

[0118] Step S28: Control the expansion of the retractable inner diameter of the silicon wafer support ring 120 to a first inner diameter D1201 that is larger than the diameter of the silicon wafer 200 and the diameter of the heating stage 130;

[0119] Step S29: As Figure 7A The control ring 120 moves the silicon wafer lifting ring 120 below the heating platform 130, and the support column 140 drives the silicon wafer 200 to descend, or, as shown Figure 7B The heating stage 130 is raised until the silicon wafer 200 is placed on the heating stage 130 to perform the next thin film deposition.

[0120] In step S24, the drive device 150 can drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate, so that the multiple telescopic members 122 slide toward the center of the lifting ring body 121, thereby reducing the expandable inner diameter of the silicon wafer lifting ring 120; in step S28, the drive device 150 can drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate in the opposite direction, so that the multiple telescopic members 122 slide away from the center of the lifting ring body 121, thereby expanding the expandable inner diameter of the silicon wafer lifting ring 120.

[0121] It should be noted that in the accompanying drawings of this embodiment, the transmission component 123 in step S24 rotates clockwise, and the transmission component 123 in step S28 rotates counterclockwise. Alternatively, the opposite rotation scheme can be adopted depending on the specific structure of the silicon wafer support ring 120.

[0122] Example 5

[0123] like Figure 8 and Figure 11 The diagram shown is a flowchart and schematic diagram of the main steps of a thin film deposition method provided in Example 5.

[0124] Specifically, the thin film deposition method provided in this embodiment includes the following steps:

[0125] Step S30: The heating stage 130 is located below the silicon wafer support ring 120 in a height-adjustable manner. The support column 140 passes through the heating stage 130 and rises above the silicon wafer support ring 120. The robot moves the silicon wafer 200 into the thin film deposition chamber 110 and supports the silicon wafer 200 by the support column 140.

[0126] Step S31: The height of the support column 140 remains unchanged, and the heating stage 130 is raised so that the silicon wafer 200 is placed on the heating stage 130;

[0127] Step S32: Introduce reactive gas through spray head 160 to perform a single thin film deposition;

[0128] Step S33: Keep the height of the support column 140 and the silicon wafer 200 constant, and lower the heating stage 130 to below the silicon wafer lifting ring 120;

[0129] Step S34: Control the retractable inner diameter of the silicon wafer support ring 120 to shrink to a second inner diameter D1202 that is smaller than the diameter of the silicon wafer 200;

[0130] Step S35: Control the silicon wafer lifting ring 120 to rise until the silicon wafer 200 is supported by the silicon wafer lifting ring 120 and the support column 140 separates from the silicon wafer 200.

[0131] Step S36: The heating stage 130 remains stationary, and the silicon wafer lifting ring 120 rotates the silicon wafer 200 to a preset angle; or, the silicon wafer lifting ring 120 and the silicon wafer 200 can remain stationary, and the heating stage 130 can rotate to a preset angle.

[0132] Step S37: Control the silicon wafer lifting ring 120 to drive the silicon wafer 200 down until the silicon wafer 200 is supported by the support column 140, so that the silicon wafer 200 is separated from the silicon wafer lifting ring 120.

[0133] Step S38: Control the expansion of the retractable inner diameter of the silicon wafer support ring 120 to a first inner diameter D1201 that is larger than the diameter of the silicon wafer 200 and the diameter of the heating stage 130;

[0134] Step S39: Keep the height of the silicon wafer 200 and the support pillar 140 constant, and raise the heating stage 130 until the silicon wafer 200 is placed on the heating stage 130 to carry out the next thin film deposition.

[0135] In step S34, the drive device 150 can drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate, so that the multiple telescopic members 122 slide toward the center of the lifting ring body 121, thereby reducing the telescopic inner diameter of the silicon wafer lifting ring 120; in step S38, the drive device 150 can drive the transmission member 123 of the silicon wafer lifting ring 120 to rotate in the opposite direction, so that the multiple telescopic members 122 slide away from the center of the lifting ring body 121, thereby expanding the telescopic inner diameter of the silicon wafer lifting ring 120.

[0136] It should be noted that in the accompanying drawings of this embodiment, the transmission component 123 in step S34 rotates clockwise, and the transmission component 123 in step S38 rotates counterclockwise. Alternatively, the opposite rotation scheme can be adopted depending on the specific structure of the silicon wafer support ring 120.

[0137] The above embodiments can be freely combined as needed. The above are merely preferred embodiments of the present invention. For those skilled in the art, various improvements and modifications can be made without departing from the principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A silicon wafer lifting ring, which is installable in a thin film deposition chamber, and the thin film deposition chamber is provided with a heating table for carrying a silicon wafer to perform thin film deposition, characterized in that, the silicon wafer lifting ring has an expandable inner diameter; during thin film deposition, the silicon wafer lifting ring is configured to expand the expandable inner diameter to a first inner diameter which is larger than the diameter of the silicon wafer and the diameter of the heating table, and does not contact the silicon wafer and the heating table; during lifting the silicon wafer, the silicon wafer lifting ring is configured to contract the first inner diameter to a second inner diameter which is smaller than the diameter of the silicon wafer, and is moved to the bottom of the silicon wafer to lift the silicon wafer.

2. The silicon wafer lift ring of claim 1, wherein comprising: a lifting ring body which is a ring structure with a third inner diameter, the third inner diameter is larger than the diameter of the silicon wafer and the diameter of the heating table; a plurality of expansion members which are slidably connected with the lifting ring body and are distributed in a ring shape, the diameter of the inscribed circle of the plurality of expansion members is the expandable inner diameter; a transmission member which is in transmission connection with the expansion member, the transmission member can apply a force to the expansion member along the radial direction of the lifting ring body to make the expansion member slide towards or away from the center of the lifting ring body, so as to change the expandable inner diameter; a driving device for driving the transmission member and the lifting ring body to rotate. 3.The silicon wafer lifting ring according to claim 2, characterized in that, the expansion member is hingedly connected with the lifting ring body, and the surface of the expansion member is provided with a plurality of protrusions; the transmission member is configured as a ring structure which can rotate coaxially relative to the lifting ring body, the expansion member is located between the lifting ring body and the transmission member, and the surface of the transmission member is provided with a plurality of sliding grooves, each of the protrusions is slidably arranged in the corresponding sliding groove, when the transmission member is driven to rotate, the sliding groove generates a force on the protrusion to make the expansion member slide radially along the lifting ring body. 4.The silicon wafer lifting ring according to claim 2, characterized in that, the expansion member is hingedly connected with the lifting ring body, and the surface of the expansion member is provided with a sliding groove; the transmission member is configured as a ring structure which can rotate coaxially relative to the lifting ring body, the expansion member is located between the lifting ring body and the transmission member, and the surface of the transmission member is provided with a plurality of protrusions, each of the protrusions is slidably arranged in the corresponding sliding groove, when the transmission member is driven to rotate, the protrusion generates a force on the sliding groove to make the expansion member slide radially along the lifting ring body. 5.The silicon wafer lifting ring according to any one of claims 2-4, characterized in that, the expansion member and the lifting ring body are formed of ceramic materials with the same thermal expansion coefficient.

6. A thin film deposition apparatus, characterized by, The silicon wafer lifting ring according to any one of claims 1-5, further comprising: a thin film deposition chamber for accommodating a silicon wafer; a heating table located in the thin film deposition chamber; a shower head located above the heating table for inputting reaction gas into the thin film deposition chamber; a plurality of support columns for supporting the silicon wafer. 7.The thin film deposition device according to claim 6, characterized in that, The thin film deposition apparatus is a plasma enhanced chemical vapor deposition apparatus.

8. A thin film deposition method, characterized by, The thin film deposition apparatus of claim 6 or 7, comprising: Step S10: The heating table is located below the silicon wafer lifting ring in a lifting manner, the support column penetrates through the heating table and rises above the silicon wafer lifting ring, and the robot moves the silicon wafer into the thin film deposition chamber and supports the silicon wafer by the support column; Step S11: The height of the support column remains unchanged, and the heating table rises so that the silicon wafer is placed on the heating table; Step S12: The reaction gas is input through the shower head to implement one-time thin film deposition; Step S13: The height of the support column and the silicon wafer remains unchanged, and the heating table is lowered below the silicon wafer lifting ring; Step S14: The retractable inner diameter of the silicon wafer lifting ring is reduced to a second inner diameter smaller than the diameter of the silicon wafer; Step S15: The support column is controlled to lower the silicon wafer until the silicon wafer is carried by the silicon wafer lifting ring, and the support column is separated from the silicon wafer; Step S16: The heating table is stationary, and the silicon wafer lifting ring rotates the silicon wafer to a preset angle; or, the silicon wafer lifting ring carrying the silicon wafer is stationary, and the heating table rotates to a preset angle; Step S17: The support column is controlled to rise until the silicon wafer is lifted from the silicon wafer lifting ring; Step S18: The retractable inner diameter of the silicon wafer lifting ring is expanded to a first inner diameter greater than the diameter of the silicon wafer and the diameter of the heating table; Step S19: The height of the support column and the silicon wafer remains unchanged, and the heating table rises until the silicon wafer is placed on the heating table to implement next-time thin film deposition.

9. A thin film deposition method, characterized by, The thin film deposition apparatus of claim 6 or 7, comprising: Step S20: The silicon wafer lifting ring is located below the heating table in a lifting manner, the support column penetrates through the heating table and rises above the heating table, and the robot moves the silicon wafer into the thin film deposition chamber and supports the silicon wafer by the support column; Step S21: The height of the heating table remains unchanged, and the support column is lowered so that the silicon wafer is placed on the heating table, or the height of the support column remains unchanged, and the heating table rises so that the silicon wafer is placed on the heating table; Step S22: The reaction gas is input through the shower head to implement one-time thin film deposition; Step S23: The support column is controlled to lift the silicon wafer, and the silicon wafer lifting ring rises between the silicon wafer and the heating table, or the support column supports the silicon wafer, and the heating table is lowered, and the silicon wafer lifting ring rises between the silicon wafer and the heating table; Step S24: The retractable inner diameter of the silicon wafer lifting ring is reduced to a second inner diameter smaller than the diameter of the silicon wafer; Step S25: The support column is controlled to lower the silicon wafer until the silicon wafer is carried by the silicon wafer lifting ring, and the support column is separated from the silicon wafer, or the silicon wafer lifting ring rises until the silicon wafer is lifted and the silicon wafer continues to rise, and the support column is separated from the silicon wafer; Step S26: the heating table is static, the silicon wafer lifting ring drives the silicon wafer to rotate to a preset angle; or, the silicon wafer lifting ring and the silicon wafer are static, and the heating table rotates to a preset angle; Step S27: the support column is controlled to rise until the silicon wafer is lifted from the silicon wafer lifting ring, or the silicon wafer lifting ring is controlled to descend until the support column lifts the silicon wafer from the silicon wafer lifting ring; Step S28: the retractable inner diameter of the silicon wafer lifting ring is controlled to expand to a first inner diameter greater than the diameter of the silicon wafer and the diameter of the heating table; Step S29: the silicon wafer lifting ring is controlled to move below the heating table, the support column drives the silicon wafer to descend or the heating table rises until the silicon wafer is placed on the heating table to implement the next thin film deposition.

10. A method of thin film deposition, characterized by, The thin film deposition device of claim 6 or 7, comprising: Step S30: the heating table is located below the silicon wafer lifting ring in a lifting manner, the support column penetrates through the heating table and rises to be higher than the silicon wafer lifting ring, a robot moves a silicon wafer into the thin film deposition chamber and supports the silicon wafer by the support column; Step S31: the support column keeps a constant height, and the heating table rises to place the silicon wafer on the heating table; Step S32: a reaction gas is input through the shower head to implement a thin film deposition; Step S33: the support column keeps a constant height with the silicon wafer, and the heating table descends to be lower than the silicon wafer lifting ring; Step S34: the retractable inner diameter of the silicon wafer lifting ring is controlled to contract to a second inner diameter smaller than the diameter of the silicon wafer; Step S35: the silicon wafer lifting ring is controlled to rise until the silicon wafer is carried by the silicon wafer lifting ring, and the support column is separated from the silicon wafer; Step S36: the heating table is static, the silicon wafer lifting ring drives the silicon wafer to rotate to a preset angle; or, the silicon wafer lifting ring and the silicon wafer are static, and the heating table rotates to a preset angle; Step S37: the silicon wafer lifting ring is controlled to drive the silicon wafer to descend until the silicon wafer is carried by the support column, so that the silicon wafer is separated from the silicon wafer lifting ring; Step S38: the retractable inner diameter of the silicon wafer lifting ring is controlled to expand to a first inner diameter greater than the diameter of the silicon wafer and the diameter of the heating table; Step S39: the silicon wafer keeps a constant height with the support column, and the heating table rises until the silicon wafer is placed on the heating table to implement the next thin film deposition.

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