Electric field distribution adjusting device and plasma etching machine

Abstract

The invention discloses an electric field distribution adjusting device which comprises a first shielding plate and a second shielding plate. The first shielding plate is provided with a hollow hole; the second shielding plate is connected with the first shielding plate, and the two shielding plates can move relatively; and when the second shielding plate moves relative to the first shielding plate, the opening degree of the hollow hole can be adjusted. And the first shielding plate and the second shielding plate can shield an electric field respectively. The electric field distribution adjusting device is provided with two shielding plates capable of shielding an electric field, the two shielding plates can move relatively, the second shielding plate adjusts the opening degree of a hollow hole in the first shielding plate in the relative movement process, and then the shielding degree of the electric field generated by a plasma coupling coil of the plasma etching machine is adjusted. When the etching uniformity of the plasma etching machine is not good, the etching uniformity is improved by changing the electric field. The invention further discloses a plasma etching machine applying the electric field distribution adjusting device, the etching uniformity can be improved by changing the electric field, and the etching effect is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing equipment, and more specifically, to an electric field distribution regulating device, and also to a plasma etcher using the electric field distribution regulating device. Background Art

[0002] Plasma etcher is widely used in the semiconductor industry. Its working principle is that under vacuum and low pressure, the radio frequency generated by the ICP (Inductive Coupled Plasma) radio frequency power supply is output to the annular plasma coupling coil, and the etching gas mixed in a certain proportion is coupled to glow discharge to generate high-density plasma. Under the action of the RF (Radio Frequency) radio frequency of the bias electrode, these plasmas bombard the surface of the substrate, and the semiconductor chemical bonds in the graphic area of ​​the substrate are broken, and volatile substances are generated with the etching gas, which are separated from the substrate in the form of gas and are extracted from the vacuum pipeline.

[0003] However, the plasma coupling coil in the plasma etcher is fixedly installed, and the electric field distribution generated is unchanged under the same power, voltage and other conditions. When the etching uniformity is poor, the etching uniformity cannot be improved by changing the electric field.

[0004] Therefore, how to effectively improve the uniformity of etching by changing the electric field is an urgent problem to be solved by those skilled in the art. Summary of the invention

[0005] In view of this, the present invention provides an electric field distribution adjustment device, which is provided with two shielding plates capable of shielding the electric field, the two shielding plates can move relative to each other, and during the relative movement, the second shielding plate adjusts the opening of the hollow hole in the first shielding plate, thereby adjusting the degree of shielding of the electric field generated by the plasma coupling coil of the plasma etcher, so as to improve the etching uniformity by changing the electric field when the etching uniformity of the plasma etcher is not good. The present invention also provides a plasma etcher using the above electric field distribution adjustment device, which can improve the etching uniformity by changing the electric field and enhance the etching effect.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] An electric field distribution regulating device, comprising:

[0008] A first shielding plate, wherein the first shielding plate is provided with a hollow hole;

[0009] The second shielding plate is connected to the first shielding plate, and the two shielding plates can move relative to each other; when the second shielding plate moves relative to the first shielding plate, the opening of the hollow hole can be adjusted.

[0010] Optionally, in the above-mentioned electric field distribution adjusting device, the second shielding plate can rotate relative to the first shielding plate.

[0011] Optionally, the above-mentioned electric field distribution adjustment device further includes an operating rod, which is movably connected to the first shielding plate or the second shielding plate and is used to drive the shielding plate connected thereto to rotate relative to the other shielding plate.

[0012] Optionally, in the above-mentioned electric field distribution adjustment device, the operating rod is hinged to one of the two shielding plates; the operating rod is provided with an arc-shaped long strip hole for insertion and cooperation with a limit screw.

[0013] Optionally, the electric field distribution regulating device further comprises a spacer ring; the first shielding plate and the second shielding plate are respectively sleeved on the spacer ring.

[0014] Optionally, in the above-mentioned electric field distribution regulating device, a convex edge is provided at a side of an edge of the first shielding plate facing the second shielding plate, and the convex edge is circled around the outer periphery of the second screen plate.

[0015] Optionally, in the above-mentioned electric field distribution adjustment device, there are multiple hollow holes; and the second shielding plate includes multiple shielding parts for adjusting the opening of the hollow holes.

[0016] Optionally, in the above-mentioned electric field distribution adjustment device, the number of the shielding parts and the number of the hollow holes are the same, and the two correspond one to one.

[0017] Optionally, in the above-mentioned electric field distribution adjustment device, all of the shielding parts can move relative to the first shielding plate simultaneously.

[0018] Optionally, in the above-mentioned electric field distribution adjustment device, each of the shielding parts is separate from each other, each of the shielding parts is movably connected to the first shielding plate, and each of the shielding parts is linked by a connecting piece.

[0019] Optionally, in the above-mentioned electric field distribution adjustment device, the second shielding plate also includes a mounting portion; each of the shielding portions is fixedly connected to the mounting portion and arranged along the circumference of the mounting portion.

[0020] Optionally, the above-mentioned electric field distribution regulating device also includes an insulating plate connected to the first shielding plate and / or the second shielding plate, and the insulating plate is stacked with the first shielding plate and the second shielding plate; the insulating plate is located on the side of the first shielding plate away from the second shielding plate, or is located on the side of the second shielding plate away from the first shielding plate.

[0021] Optionally, in the above-mentioned electric field distribution adjustment device, the insulating plate is fixedly connected to the first shielding plate, or fixedly connected to the second shielding plate.

[0022] Optionally, in the above-mentioned electric field distribution adjustment device, the opening adjustment range of the hollow hole is from fully open to fully blocked.

[0023] A plasma etcher comprises a shielding cover and a plasma reaction chamber which are fixedly connected, wherein the space enclosed by the shielding cover and the plasma reaction chamber is divided into a first space and a second space by a dielectric window; a plasma coupling coil is arranged in the first space; the plasma etcher also comprises a gas jet and an electric field distribution regulating device as described in any one of the above technical solutions; the gas jet passes through the plasma coupling coil and the dielectric window and extends into the second space; the electric field distribution regulating device is arranged between the plasma coupling coil and the dielectric window.

[0024] Optionally, in the above-mentioned plasma etcher, the operating rod of the electric field distribution adjusting device extends out of the first space, and the limiting screw of the electric field distribution adjusting device is fixed to the shielding cover and / or the plasma reaction chamber.

[0025] Optionally, in the above plasma etcher, the first shielding plate and the second shielding plate are connected via the dielectric window, and at least one of the first shielding plate and the second shielding plate is movably mounted on the dielectric window.

[0026] Optionally, in the above plasma etcher, the second shielding plate is fixed to the dielectric window, and the first shielding plate can be movably mounted on the dielectric window.

[0027] Optionally, in the above plasma etcher, the insulating plate of the electric field distribution adjusting device is located between the plasma coupling coil and a shielding plate adjacent to the insulating plate.

[0028] Optionally, in the above-mentioned plasma etcher, a bias electrode is provided in the second space, and a wafer placement plate is arranged on the side of the bias electrode facing the nozzle head; the wafer placement plate and the bias electrode are connected by a connecting sleeve arranged on the outer periphery of the two; a groove is provided on the end face of the connecting sleeve, and a wafer positioning ring is installed in the groove.

[0029] The present invention provides an electric field distribution adjustment device, comprising a first shielding plate and a second shielding plate; the first shielding plate is provided with a hollow hole; the second shielding plate is connected to the first shielding plate, and the two shielding plates can move relative to each other; when the second shielding plate moves relative to the first shielding plate, the opening of the hollow hole can be adjusted. The first shielding plate and the second shielding plate can respectively shield the electric field.

[0030] When the above-mentioned auxiliary electric field diameter-changing device is applied, two shielding plates are arranged between the plasma coupling coil and the dielectric window of the plasma etcher. By making the first shielding plate and the second shielding plate move relative to each other, the opening of the hollow hole of the first shielding plate can be adjusted to adjust the distribution of the plasma in the plasma reaction chamber of the plasma etcher acting on the wafer, thereby playing a role in adjusting the etching uniformity.

[0031] Obviously, in the electric field distribution adjustment device provided by the present invention, the opening of the hollow hole in the first shielding plate can be adjusted during the relative movement of the two shielding plates, thereby adjusting the shielding degree of the electric field generated by the plasma coupling coil of the plasma etcher, thereby achieving the improvement of etching uniformity by changing the electric field when the etching uniformity of the plasma etcher is not good.

[0032] The present invention also provides a plasma etcher using the electric field distribution regulating device, which can improve etching uniformity and enhance etching effect by changing the electric field. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0034] Figure 1 A schematic diagram of the structure of a plasma etcher provided in an embodiment of the present invention;

[0035] Figure 2 A schematic diagram of the internal structure of a shielding cover provided by an embodiment of the present invention;

[0036] Figure 3 A schematic diagram of the three-dimensional structure of a first shielding plate provided in an embodiment of the present invention;

[0037] Figure 4 A schematic diagram of the three-dimensional structure of a second shielding plate provided in an embodiment of the present invention;

[0038] Figure 5 A schematic diagram of a top view of the structure when the hollow hole in the electric field distribution adjustment device provided by an embodiment of the present invention is completely blocked;

[0039] Figure 6 A schematic diagram of the structure of the electric field distribution adjustment device provided in an embodiment of the present invention when the operating rod starts to increase the opening after the hollow hole is completely blocked;

[0040] Figure 7A schematic diagram of the structure of the electric field distribution adjustment device provided in an embodiment of the present invention when the operating rod continues to increase the opening of the hollow hole from a relatively small opening;

[0041] Figure 8 A schematic diagram of the structure of the electric field distribution adjustment device provided in an embodiment of the present invention when the hollow holes are fully opened;

[0042] in, Figure 1-Figure 8 middle:

[0043] The chamber cover 101; the chamber cover liner 102; the dielectric window 103; the insulating plate 104; the first shielding plate 105; the hollow hole 1051; the second shielding plate 106; the shielding portion 1061; the mounting portion 1062; the plasma coupling coil 107; the nozzle 108; the shielding cover 109; the fastener 110; the spacer ring 111; the gas source 112; the operating rod 113; the long hole 1131; the limit screw 114; the connecting rod 115; the hinge shaft 116; the excitation source matching network 117; the excitation source RF power supply 118; the wafer positioning ring 119; the wafer 120; the wafer placement plate 121; the connecting sleeve 122; the plasma reaction chamber 123; the liner 124; the bias electrode 125; the gas guide cover 126; the pressure control valve 127; the vacuum pump 128; the bias matching network 129; and the bias RF power supply 130. DETAILED DESCRIPTION

[0044] The embodiment of the present invention discloses an electric field distribution adjustment device, which is provided with two shielding plates capable of shielding electric fields. The two shielding plates can move relative to each other, and during the relative movement, the second shielding plate adjusts the opening of the hollow hole in the first shielding plate, thereby adjusting the shielding degree of the electric field generated by the plasma coupling coil of the plasma etcher, so as to improve the etching uniformity by changing the electric field when the etching uniformity of the plasma etcher is not good. The embodiment of the present invention also discloses a plasma etcher using the above electric field distribution adjustment device, which can improve the etching uniformity by changing the electric field and enhance the etching effect.

[0045] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0046] See also Figure 1-Figure 8The embodiment of the present invention provides an electric field distribution adjustment device, comprising a first shielding plate 105 and a second shielding plate 106; the first shielding plate 105 is provided with a hollow hole 1051; the second shielding plate 106 is connected to the first shielding plate 105, and the two shielding plates can move relative to each other; when the second shielding plate 106 moves relative to the first shielding plate 105, the opening of the hollow hole 1051 can be adjusted. The first shielding plate 105 and the second shielding plate 106 can respectively shield the electric field.

[0047] When the above-mentioned auxiliary electric field diameter-changing device is applied, two shielding plates are arranged between the plasma coupling coil 107 and the dielectric window 103 of the plasma etcher. By making the first shielding plate 105 and the second shielding plate 106 move relative to each other, the opening of the hollow hole 1051 of the first shielding plate 105 can be adjusted to adjust the distribution of the plasma in the plasma reaction chamber 123 of the plasma etcher acting on the wafer 120, thereby playing a role in adjusting the etching uniformity.

[0048] Obviously, the relative movement of the two shielding plates in the electric field distribution adjustment device provided in this embodiment can adjust the opening of the hollow hole in the first shielding plate 105, and then adjust the shielding degree of the electric field generated by the plasma coupling coil 107 of the plasma etcher, so as to improve the etching uniformity by changing the electric field when the etching uniformity of the plasma etcher is not good.

[0049] In some embodiments, the opening adjustment range of the hollow hole is set from fully open to fully blocked, so as to make full use of the area of ​​the hollow hole and adjust the distribution of the electric field to the greatest extent, which is beneficial to improving the etching uniformity. Of course, the opening adjustment range of the hollow hole can also be set from partially open to fully open, or from fully open to partially open, which is not specifically limited in this embodiment.

[0050] The relative motion form of the first shielding plate 105 and the second shielding plate 106 can be set to relative rotation, such as one of the two shielding plates remains relatively still relative to the plasma etcher, and the other can rotate around its own axis, so that the two shielding plates produce relative rotation, or the two shielding plates can rotate around the same axis at different angular velocities, so that the two shielding plates produce relative rotation, etc. In the technical solution provided in this embodiment, the first shielding plate 105 and the second shielding plate 106 are set to be stacked. Of course, the positional relationship between the first and second shielding plates can also be set to other forms according to the relative motion form between the two, which is not specifically limited in this embodiment.

[0051] For easy operation, the electric field distribution adjustment device further includes an operating rod 113, which is movably connected to the first shielding plate 105 or the second shielding plate 106, and is used to drive the shielding plate connected to the operating rod 113 to rotate relative to the other shielding plate.

[0052] In some embodiments, the operating rod 113 is hinged to one of the two shielding plates, and the operating rod 113 is provided with an arc-shaped long strip hole 1131 for inserting and matching with the limit screw 114. The limit screw 114 is fixed to the plasma etcher. For easy installation, the shielding plate connected to the operating rod 113 is fixedly connected with a connecting rod 115; the end of the operating rod 113 and the connecting rod 115 are hinged to each other through a hinge shaft 116, and the long strip hole 1131 can be set in the middle of the operating rod 113.

[0053] The electric field distribution regulating device further comprises a spacer ring 111; the first shielding plate 105 and the second shielding plate 106 are respectively sleeved on the spacer ring 111, and the first and second shielding plates are connected to each other through the spacer ring 111 so as to be relatively movable. The spacer ring 113 can be fixed to the dielectric window 103 of the plasma etcher, and the first shielding plate 105 and / or the second shielding plate 106 can rotate around the spacer ring 111. Further, in order to avoid simultaneously controlling the two shielding plates to not rotate around the spacer ring 111 when adjusting the hollow hole 1051 to a suitable opening, the two shielding plates are preferably arranged so that only one can rotate around the spacer ring 111, and the other is fixed to the spacer ring 111, such as the first shielding plate 105 is fixed to the spacer ring 111, and the second shielding plate 106 can be sleeved on the spacer ring 111 rotatably around the spacer ring 111, or the first shielding plate 105 can be sleeved on the spacer ring 111 rotatably around the spacer ring 111, and the second shielding plate 106 is fixed to the spacer ring 111.

[0054] Furthermore, in the above-mentioned electric field distribution regulating device, a convex edge is provided at one side of the edge of the first shielding plate 105 facing the second shielding plate 106, and the convex edge is arranged around the outer periphery of the second shielding plate.

[0055] In addition to relative rotation, the relative movement form of the first shielding plate 105 and the second shielding plate 106 can also be set to relative sliding, and accordingly, one of the two shielding plates can be slidably clamped on the other shielding plate; the two shielding plates can also be set to be able to swing relative to each other, and accordingly, the second shielding plate 106 is set to be hinged to the hollow hole 1051 of the first shielding plate 105 so as to be openable and closable. This embodiment does not limit the relative movement form of the first shielding plate 105 and the second shielding plate 106.

[0056] The second shielding plate 106 includes a shielding portion 1061 for adjusting the opening of the hollow hole 1051. The hollow hole 1051 of the first shielding plate 105 can be set to one, and accordingly, the shielding portion 1061 can be set to one or more. The hollow hole 1051 of the first shielding plate 105 can also be set to multiple, and accordingly, the shielding portion 1061 can be set to one or more.

[0057] In some embodiments, the number of shielding portions 1061 and hollow holes 1051 is the same, and the two correspond one to one. In other embodiments, the number of shielding portions 1061 is set to be less than the hollow holes 1051, and some or all of the shielding portions 1061 are used to shield multiple hollow holes 1051. In other embodiments, the number of shielding portions 1061 is set to be more than the hollow holes 1051, and some or all of the hollow holes 1051 are adjusted in opening by multiple shielding portions 1061.

[0058] In order to facilitate the adjustment of the opening of each hollow hole 1051 , in an implementation scheme in which a plurality of shielding portions 1061 are provided, all of the shielding portions 1061 are configured to be able to move relative to the first shielding plate 105 at the same time.

[0059] In some embodiments, all shielding portions 1061 are configured to be separate from each other, each shielding portion 1061 is movably connected to the first shielding plate 105, and each shielding portion 1061 is linked through a connecting piece to enable all shielding portions 1061 to move relative to the first shielding plate 105 at the same time.

[0060] In other embodiments, the second shielding plate 106 further includes a mounting portion 1062 in addition to the shielding portion 1061; each shielding portion 1061 is fixedly connected to the mounting portion 1062 and arranged along the circumference of the mounting portion 1062. All shielding portions 1061 are connected as a whole through the mounting portion 1062, so that all shielding portions 1061 can move relative to the first shielding plate 105 at the same time. Further, in the solution where the first shielding plate 105 and the second shielding plate 106 rotate relatively, and the two shielding plates are connected through the spacer ring 111, the mounting portion 1062 of the second shielding plate 106 is sleeved on the spacer ring 111.

[0061] The electric field distribution adjustment device further includes an insulating plate 104, which is connected to the first shielding plate 105 and / or the second shielding plate 106; the insulating plate 104 is stacked with the first shielding plate 105 and the second shielding plate 106; the insulating plate 104 is located on the side of the first shielding plate 105 away from the second shielding plate 106, or on the side of the second shielding plate 106 away from the first shielding plate 105. When the electric field distribution adjustment device is used, the insulating plate 104 needs to be arranged between the shielding plate and the plasma coupling coil 107 of the plasma etcher.

[0062] The insulating plate 104 is configured to be fixedly connected to the first shielding plate 105, or to be fixedly connected to the second shielding plate 106. This embodiment does not limit the connection method between the insulating plate 104 and the shielding plate, and only needs to ensure that it is arranged between the plasma coupling coil 107 and the shielding plate adjacent to the plasma coupling coil 107.

[0063] See also Figure 1-4 In one embodiment, a through hole that is plugged into the spacer ring 111 is provided in the middle of the first shielding plate 105, and a plurality of hollow holes 1051 are arranged along the circumference of the through hole; the second shielding plate 105 includes a mounting portion 1062 and a plurality of shielding portions 1061 fixed to the outer periphery of the mounting portion 1062; the number of the shielding portions 1061 and the hollow holes 1051 is the same, and the two correspond one to one; a through hole that is plugged into the spacer ring 111 is provided in the middle of the mounting portion 1062; the first shielding plate 105 is arranged between the second shielding plate 106 and the insulating plate 104, the insulating plate 104 and the spacer ring 111 are fixed to the dielectric window 103 of the plasma etcher by fasteners 110, the first shielding plate 105 can rotate around the spacer ring 111, and the second shielding plate 106 is fixedly connected to the spacer ring 111.

[0064] Figure 6 1061, so that the electric field generated by the plasma coupling coil 107 cannot pass through the hollow holes 1051 and is completely shielded; Figure 6 The operating rod 113 is pushed in the direction c1 as shown, and the operating rod 113 drives the first shielding plate 105 to rotate around the spacer ring 111 to Figure 7 The representative position shown in FIG. 1 is a typical position. At this time, a gap a1 is generated between the first shielding plate 105 and the shielding portion 1061 of the second shielding plate 106. The electric field generated by the plasma coupling coil 107 can act on the plasma reaction chamber 123 through the gap a1. The operating rod 113 is pushed in the direction c2, and the first shielding plate 105 continues to rotate until Figure 8 In this process, the electric field applied by the plasma coupling coil 107 to the plasma reaction chamber 123 gradually increases as the gap between the first shielding plate 105 and the second shielding plate 106 increases. The electric field applied by the plasma coupling coil 107 to the plasma reaction chamber 123 can be gradually reduced by driving the operating rod 113 in the reverse direction. In this way, the distribution of the electric field can be adjusted by adjusting the operating rod 113, so as to adjust the distribution of the plasma in the plasma reaction chamber 123 applied to the wafer 120, thereby adjusting the etching uniformity.

[0065] An embodiment of the present invention further provides a plasma etcher, comprising a fixedly connected shielding cover 109 and a plasma reaction chamber 123, the space enclosed by the two being divided into a first space and a second space by a dielectric window 103; a plasma coupling coil 107 is provided in the first space; a jet head 108 and an electric field distribution adjustment device are also provided; the electric field distribution adjustment device is the electric field distribution adjustment device provided in the above embodiment; the jet head 108 passes through the plasma coupling coil 107 and the dielectric window 103 and extends into the second space; the electric field distribution adjustment device is arranged between the plasma coupling coil 107 and the dielectric window 103.

[0066] The operating rod 113 of the electric field distribution regulating device extends out of the first space to avoid operating the operating rod 113 after disassembling the shielding cover 109, which is convenient for users. The limiting screw 114 of the electric field distribution regulating device is fixed to the shielding cover 109 and / or the plasma reaction chamber 123.

[0067] The first shielding plate 105 and the second shielding plate 106 may be arranged to be connected through the dielectric window 103 (i.e., the first shielding plate 105 and the second shielding plate 106 may be respectively installed on the dielectric window 103), and at least one of the first shielding plate 105 and the second shielding plate 106 may be movably installed on the dielectric window 103. In some embodiments, the second shielding plate 106 is fixedly connected to the dielectric window 103, and the first shielding plate 105 may be movably installed on the dielectric window 103.

[0068] like Figure 1 As shown, the first shielding plate 105 and the second shielding plate 106 are respectively installed on the dielectric window 103 through the spacer ring 111 inserted and matched with the two; the insulating plate 104 and the spacer ring 111 of the electric field distribution adjustment device are fixed to the dielectric window 103 through the fastener 110; the first shielding plate 105, the second shielding plate 106 and the insulating plate 104 are stacked, and the insulating plate 104 is located between the plasma coupling coil 107 and the shielding plate adjacent to the insulating plate 104.

[0069] A bias electrode 125 is provided in the second space, and a wafer placement plate 121 is arranged on the side of the bias electrode 125 facing the nozzle 108; the wafer placement plate 121 and the bias electrode 125 are connected by a connecting sleeve 122 which is sleeved on the outer periphery of the two; a groove is provided on the end face of the connecting sleeve 122, and a wafer positioning ring 119 is installed in the groove for positioning the wafer 120 to be etched.

[0070] An inner liner 124 is disposed in the plasma reaction chamber 123 , and a bias electrode 125 extends into the inner liner 124 .

[0071] The open end of the plasma reaction chamber 123 is provided with a chamber cover 101, which extends into the space enclosed by the shielding cover 109 and the plasma reaction chamber 123; the dielectric window 103 is installed on the chamber cover 101. The dielectric window 103 and the chamber cover 101 are sealed. The chamber cover 101 is fixed with a chamber cover liner 102, which plays a role in protecting the chamber cover 101.

[0072] The jet head 108 is connected to the gas source 112 through a pipeline; the excitation source RF power supply 118 is connected to the plasma coupling coil 107 through the excitation source matching network 117; the bias RF power supply 130 is connected to the bias electrode 125 through the bias matching network 129; the plasma reaction chamber 123 is connected to the gas guide cover 126; the vacuum pump 128 is connected to the gas guide cover 126 through the pressure control valve 127. When working, the jet head 108 sprays the gas provided by the gas source 112 into the plasma reaction chamber 126, and generates plasma under the action of the plasma coupling coil 107; the bias electrode 125 provides a bias under the action of the bias RF power supply 130 and the bias matching network 129, accelerates the plasma and bombards the wafer 120. The vacuum pump 128 extracts the gas in the plasma reaction chamber 123 under the regulation of the pressure control valve 127.

[0073] The plasma etcher provided in this embodiment uses the electric field distribution adjustment device provided in the above embodiment to improve the uniformity of etching by changing the electric field. Of course, the plasma etcher provided in this embodiment also has other effects of the electric field distribution adjustment device provided in the above embodiment, which will not be repeated here.

[0074] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0075] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An electric field distribution adjustment device, characterized in that: include: A first shielding plate, wherein the first shielding plate is provided with a hollow hole; A second shielding plate, wherein the second shielding plate is connected to the first shielding plate, and the two shielding plates can move relative to each other; When the second shielding plate moves relative to the first shielding plate, the opening of the hollow hole can be adjusted.

2. The electric field distribution regulating device according to claim 1, characterized in that: The second shielding plate is rotatable relative to the first shielding plate.

3. The electric field distribution regulating device according to claim 2, characterized in that: It also includes an operating rod, which is movably connected to the first shielding plate or the second shielding plate and is used to drive the shielding plate connected thereto to rotate relative to the other shielding plate.

4. The electric field distribution regulating device according to claim 3, characterized in that: The operating rod is hinged to one of the two shielding plates; the operating rod is provided with an arc-shaped long strip hole for inserting and cooperating with a limit screw.

5. The electric field distribution regulating device according to claim 2, characterized in that: It also includes a spacer ring; the first shielding plate and the second shielding plate are respectively sleeved on the spacer ring.

6. The electric field distribution regulating device according to claim 2, characterized in that: A convex edge is provided on one side of the edge of the first shielding plate facing the second shielding plate, and the convex edge is circled around the outer periphery of the second screen plate.

7. The electric field distribution regulating device according to claim 1 or 2, characterized in that: There are a plurality of hollow holes; and the second shielding plate includes a plurality of shielding parts for adjusting the opening of the hollow holes.

8. The electric field distribution regulating device according to claim 7, characterized in that: The number of the shielding portions and the number of the hollow holes are the same, and the two correspond one to one.

9. The electric field distribution regulating device according to claim 7, characterized in that: All of the shielding parts can move relative to the first shielding plate simultaneously.

10. The electric field distribution regulating device according to claim 9, characterized in that: The shielding parts are separate from each other, and are movably connected to the first shielding plate, and are linked to each other through a connecting piece.

11. The electric field distribution regulating device according to claim 7, characterized in that: The second shielding plate further includes a mounting portion; each of the shielding portions is fixedly connected to the mounting portion and arranged along the circumference of the mounting portion.

12. The electric field distribution regulating device according to claim 1, characterized in that: It also includes an insulating plate connected to the first shielding plate and / or the second shielding plate, and the insulating plate is stacked with the first shielding plate and the second shielding plate; the insulating plate is located on the side of the first shielding plate facing away from the second shielding plate, or on the side of the second shielding plate facing away from the first shielding plate.

13. The electric field distribution regulating device according to claim 12, characterized in that: The insulating plate is fixedly connected to the first shielding plate, or is fixedly connected to the second shielding plate.

14. The electric field distribution regulating device according to claim 1, characterized in that: The opening adjustment range of the hollow hole is from fully open to fully blocked.

15. A plasma etcher, characterized in that: It comprises a shielding cover and a plasma reaction chamber which are fixedly connected, and the space enclosed by the shielding cover and the plasma reaction chamber is divided into a first space and a second space by a dielectric window; a plasma coupling coil is arranged in the first space; it also comprises a jet head and an electric field distribution regulating device according to any one of claims 1 to 14; the jet head passes through the plasma coupling coil and the dielectric window and extends into the second space; The electric field distribution adjusting device is arranged between the plasma coupling coil and the dielectric window.

16. The plasma etcher according to claim 15, characterized in that: The operating rod of the electric field distribution adjusting device extends out of the first space, and the limiting screw of the electric field distribution adjusting device is fixed to the shielding cover and / or the plasma reaction chamber.

17. The plasma etcher according to claim 15, characterized in that: The first shielding plate and the second shielding plate are connected through the dielectric window, and at least one of the first shielding plate and the second shielding plate is movably mounted on the dielectric window.

18. The plasma etcher according to claim 17, characterized in that: The second shielding plate is fixed to the dielectric window, and the first shielding plate is movably installed on the dielectric window.

19. The electric field distribution regulating device according to claim 15, characterized in that: The insulating plate of the electric field distribution adjusting device is located between the plasma coupling coil and a shielding plate adjacent to the insulating plate.

20. The electric field distribution adjustment device according to claim 15, characterized in that: A bias electrode is provided in the second space, and a wafer placement plate is arranged on the side of the bias electrode facing the nozzle; the wafer placement plate and the bias electrode are connected by a connecting sleeve arranged on the outer periphery of the two; a groove is provided on the end face of the connecting sleeve, and a wafer positioning ring is installed in the groove.

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