Semiconductor device
By introducing a flow control structure into the plasma etching equipment, the plasma is concentrated around the etching target using inclined sidewalls and vents, solving the problem of poor etching uniformity and achieving higher etching uniformity and lower cost.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- JIANGSU LEUVEN INSTR CO LTD
- Filing Date
- 2025-06-09
- Publication Date
- 2026-05-05
AI Technical Summary
In plasma etching equipment, the plasma is dispersed throughout the process chamber, resulting in poor etching uniformity of the etched target.
A flow control structure, including inclined sidewalls and vents, is adopted to guide the plasma formed by the reactive gas to the area around the etching target. The inclined sidewall design enables high-density plasma accumulation, thereby improving etching uniformity.
This improves the etching uniformity and gas utilization of the etched target, and reduces manufacturing costs.
Smart Images
Figure CN224204098U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductors, and in particular to a semiconductor device. Background Technology
[0002] Semiconductor chips can currently be manufactured using semiconductor equipment. This equipment includes plasma etching equipment. The working principle of plasma etching equipment is as follows: under vacuum and low pressure, the radio frequency output generated by the radio frequency power supply is sent to a ring-coupled coil. The ring-coupled coil uses the reactive gas to form a high-density plasma. Under the action of the lower electrode, the plasma bombards the surface of the target to be etched, breaking the chemical bonds of the target. This plasma reacts with the reactive gas to generate volatile substances, which then detach from the target in gaseous form and are extracted from the vacuum line, completing the etching process.
[0003] In the process of etching a target using plasma etching equipment, reactive gas needs to be introduced around the target so that the reactive gas forms plasma to bombard the target. However, the plasma is dispersed throughout the process chamber of the plasma etching equipment, resulting in poor uniformity of etching the target. Utility Model Content
[0004] In view of this, the purpose of this application is to provide a semiconductor device that enables high-density plasma to accumulate around the etching target, thereby improving the etching uniformity of the etching target.
[0005] To achieve the above objectives, this application provides the following technical solution:
[0006] This application provides a semiconductor device, which includes a plasma reaction chamber, a flow control structure, a jet nozzle, and a plasma coupling coil; the flow control structure is disposed in the plasma reaction chamber and between the etching target and the jet nozzle;
[0007] The flow control structure includes an inclined sidewall, the intersection of the extensions of the inclined sidewall is located on one side of the etching target, and a vent is formed around the side of the inclined sidewall closest to the etching target.
[0008] The jet nozzle is used to introduce reaction gas into the plasma reaction chamber, and the plasma coupling coil is used to process the reaction gas into plasma;
[0009] The flow control structure is used to confine the plasma around the etching target.
[0010] Optionally, the shape of the vent hole matches the shape of the etching target.
[0011] Optionally, the shape and size of the vent hole are the same as the shape and size of the etching target.
[0012] Optionally, the shape of the side of the inclined sidewall away from the etching target matches the shape of the plasma reaction chamber.
[0013] Optionally, the inclined sidewall is an arc surface or a plane.
[0014] Optionally, the size of the vent hole on the side closer to the etching target is larger than the size of the vent hole on the side farther from the etching target.
[0015] Optionally, the vent hole has a chamfered structure on the side closest to the etching target.
[0016] Optionally, the semiconductor device further includes a support structure connected to the inclined sidewall of the current control structure, the support structure being used to support the current control structure.
[0017] Optionally, the sidewall direction of the vent hole is at a preset angle to the plane where the etching target is located.
[0018] Optionally, the preset angle is 45 degrees to 135 degrees.
[0019] Optionally, a guide ring is provided on the side of the inclined sidewall near the etching target, and the guide ring extends toward the etching target.
[0020] Optionally, the shape of the guide ring is matched with the shape of the etching target.
[0021] This application provides a semiconductor device, which includes a plasma reaction chamber, a flow control structure, a nozzle, and a plasma coupling coil. The nozzle is used to introduce reactive gas into the plasma reaction chamber, and the plasma coupling coil is used to process the reactive gas into plasma. The flow control structure is disposed in the plasma reaction chamber and between the etching target and the nozzle, so as to guide the plasma formed by the reactive gas introduced through the nozzle to the vicinity of the etching target. The flow control structure includes an inclined sidewall, the intersection of the extension lines of the inclined sidewall is located on one side of the etching target, and a vent is formed around the side of the inclined sidewall closer to the etching target, that is, the lower end of the inclined sidewall is smaller, and a vent is formed around the lower end of the inclined sidewall. The flow control structure is used to confine the plasma around the etching target, that is, to guide the plasma formed by the reactive gas to the lower end of the inclined sidewall using the inclined sidewall, and to guide the plasma to the vicinity of the etching target through the vent formed around the lower end of the inclined sidewall, thereby achieving high-density plasma accumulation around the etching target, and ultimately improving the etching uniformity of the etching target. Attached Figure Description
[0022] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0023] Figure 1 A schematic diagram of plasma distribution in a semiconductor device is shown.
[0024] Figure 2 This illustration shows a schematic diagram of the structure of a semiconductor device provided in an embodiment of this application;
[0025] Figure 3 This paper shows a schematic diagram of a flow control structure provided in an embodiment of the present application;
[0026] Figure 4 This paper shows a top view of a flow control structure provided in an embodiment of the present application.
[0027] Figure 5 This illustration shows a top view of a plasma reaction chamber in which an etching target is placed on the lower electrode, according to an embodiment of this application.
[0028] Figure 6 This illustration shows a top view of the flow control structure and the etching target within a plasma reaction chamber, as provided in an embodiment of this application.
[0029] Figure 7 A schematic diagram of another flow control structure provided in an embodiment of this application is shown;
[0030] Figure 8 This paper shows a top view of another flow control structure provided in an embodiment of the present application.
[0031] Figure 9 This paper shows a top view of another plasma reaction chamber in which an etching target is placed on the lower electrode, according to an embodiment of this application.
[0032] Figure 10 This illustration shows a top view of another flow control structure and etching target within a plasma reaction chamber, as provided in an embodiment of this application.
[0033] Figure 11 This illustration shows a cross-sectional structural diagram of a flow control structure provided in an embodiment of this application;
[0034] Figure 12 A cross-sectional schematic diagram of another flow control structure provided in an embodiment of this application is shown;
[0035] Figure 13 A cross-sectional schematic diagram of another flow control structure provided in an embodiment of this application is shown. Detailed Implementation
[0036] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings.
[0037] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.
[0038] This application is described in detail with reference to the schematic diagrams. When detailing the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not according to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.
[0039] In the process of etching a target using plasma etching equipment, it is necessary to introduce reactive gas around the target. (Refer to...) Figure 1 As shown, gas can be introduced directly above and diagonally above the target to the left and right. However, due to limitations in the overall structure of plasma etching equipment, the plasma density and distribution are uneven, and the gas flow is dispersed throughout the process chamber, resulting in poor etching uniformity. Furthermore, the plasma gas flow is not concentrated, and some of it is directly drawn away by the vacuum pump, leading to unnecessary waste.
[0040] Based on this, this application provides a semiconductor device, which includes a plasma reaction chamber, a flow control structure, a nozzle, and a plasma coupling coil. The nozzle is used to introduce reactive gas into the plasma reaction chamber, and the plasma coupling coil is used to process the reactive gas into plasma. The flow control structure is disposed in the plasma reaction chamber and between the etching target and the nozzle, so as to guide the plasma formed by the reactive gas introduced through the nozzle to the vicinity of the etching target. The flow control structure includes an inclined sidewall, the intersection of the extension lines of the inclined sidewall is located on one side of the etching target, and a vent is formed around the side of the inclined sidewall closer to the etching target. That is, the lower end of the inclined sidewall is smaller, and a vent is formed around the lower end of the inclined sidewall. The flow control structure is used to confine the plasma around the etching target, that is, to guide the plasma formed by the reactive gas to the lower end of the inclined sidewall using the inclined sidewall, and to guide the plasma to the vicinity of the etching target through the vent formed around the lower end of the inclined sidewall, thereby achieving high-density plasma accumulation around the etching target and ultimately improving the etching uniformity of the etching target.
[0041] refer to Figure 2 The diagram shown is a schematic diagram of the structure of a semiconductor device provided in an embodiment of this application. The semiconductor device provided in this application includes: a plasma reaction chamber 101, a flow control structure 131, a jet nozzle, and a plasma coupling coil 107.
[0042] In the embodiments of this application, the plasma reaction chamber 101 is a process chamber in which etching processes can be performed using plasma. A current control structure 131 and an etching target 110 are provided in the plasma reaction chamber 101. The etching target 110 is the target to be etched, such as a wafer.
[0043] The jet nozzle is used to introduce reaction gas into the plasma reaction chamber 101, and the plasma coupling coil 107 is used to process the reaction gas into plasma.
[0044] As one possible implementation, the nozzle includes a central nozzle 106 and an edge nozzle 102a, see reference. Figure 2 As shown, the central jet nozzle 106 faces the etching target 110, and the edge jet nozzle 102a is positioned diagonally above the etching target. The central jet nozzle 106 and the edge jet nozzle 102a can be used to introduce reaction gas into the plasma reaction chamber 101.
[0045] The flow control structure 131 is disposed in the plasma reaction chamber 101 and between the etching target 110 and the jet nozzle. In other words, by being disposed between the etching target 110 and the jet nozzle, the flow control structure 131 can guide the reaction gas introduced by the jet nozzle to the vicinity of the etching target.
[0046] Specifically, the flow control structure 131 is disposed between the central jet nozzle 106 and the etching target 110, and also between the edge jet nozzle 102a and the etching target 110, for reference. Figure 2 As shown.
[0047] The flow control structure 131 includes an inclined sidewall 1311, as referenced. Figure 3 As shown, a vent 1312 is formed around the side of the inclined sidewall 1311 closest to the etching target 110. The vent 1312 allows more plasma to gather towards the center, improving gas utilization and plasma density, thereby improving uniformity and etching rate. The intersection of the extension lines of the inclined sidewall 1311 is located on one side of the etching target 110, that is, the extension lines of the inclined sidewall 1311 intersect on one side of the etching target 110. In other words, if we assume that the side of the flow control structure 131 closest to the etching target 110 is the lower end of the flow control structure 131, then the side of the flow control structure 131 furthest from the etching target 110 is the upper end of the flow control structure 131. The lower end of the flow control structure 131 is provided with the vent 1312, and the inclined sidewall 1311 is inclined downwards. The size of the lower end of the inclined sidewall 1311 is smaller than the size of the upper end of the inclined sidewall 1311, and finally the flow control structure 131 forms a funnel-shaped structure.
[0048] The plasma formed by the reaction gas is guided to the vent 1312 at the lower end of the flow control structure 131 by the inclined sidewall 1311. The plasma is then guided to the vicinity of the etching target 110 through the vent 1312 and confined to the vicinity of the etching target 110, thereby achieving high-density plasma accumulation around the etching target 110 and ultimately improving the etching uniformity of the etching target 110.
[0049] A vent 1312 is formed around the inclined sidewall 1311 on the side close to the etching target 110. This not only enables the plasma to be diverted to the area around the etching target 110 using the vent 1312, but also makes it easier to manufacture, reducing the cost of manufacturing the flow control structure 110.
[0050] In embodiments of this application, the semiconductor device further includes a cavity liner 108, a cavity cover 102, a ceramic dielectric window 103, an excitation source RF power supply 116, an excitation source matching network 115, a shield 109, a central gas source 118, an edge gas source 117, a lower electrode 111, a bias RF power supply 122, a bias matching network 121, a pressure control valve 120, a vacuum pump 123, an electrode cover 104, an etching target focusing ring 105, and a vacuum pipeline 119.
[0051] Excitation source matching network 115 is electrically connected to excitation source RF power supply 116, and excitation source matching network 115 is electrically connected to plasma coupling coil 107. Bias matching network 121 is electrically connected to bias RF power supply 122, and bias matching network 121 is electrically connected to lower electrode 111. Pressure control valve 120 is electrically connected to vacuum pump 123, and pressure control valve 120 is connected to vacuum pipeline 119. Electrode cover 104 surrounds lower electrode 111 in a direction parallel to the surface of lower electrode 111. Etching target 110 is disposed on the surface of lower electrode 111. Etching target focusing ring 105 is disposed on the surface of lower electrode 111. Etching target 110 is disposed in etching target focusing ring 105. Ceramic dielectric window 103 is disposed opposite to lower electrode 111. Plasma coupling coil 107 is disposed on the side of ceramic dielectric window 103 away from lower electrode 111. An edge nozzle 102a is disposed in the cavity cover 102 near the ceramic dielectric window 103, and a center nozzle 106 is disposed in the ceramic dielectric window 103. The cavity cover 102 protects the lower electrode 111, and the shield 109 protects the ceramic dielectric window 103 and the plasma coupling coil 107. An inner liner 108 is disposed on a portion of the sidewall of the cavity cover 102, and one end of the inner liner 108 contacts the electrode cover 104.
[0052] The central gas source 118 provides reaction gas, which is injected into the plasma reaction chamber 101 through the central jet nozzle 106. The edge gas source 117 provides reaction gas, which is injected into the plasma reaction chamber 101 through the edge jet nozzle 102a. Under the action of the plasma coupling coil 107, plasma is generated. The lower electrode 111 provides a bias voltage to accelerate the plasma and bombard the target 110 for etching.
[0053] The flow control structure 131 is disposed between the ceramic dielectric window 103 and the lower electrode 111. The central jet nozzle 106 disposed in the ceramic dielectric window 103 can introduce reactive gas into the plasma reaction chamber 101. Then, the reactive gas generates plasma under the action of the plasma coupling coil 107. The plasma is guided to the area around the etching target 110 by the inclined sidewall 1311 of the flow control structure 131. The lower electrode 111 further provides bias voltage during the process of guiding the plasma to the etching target 110 by the inclined sidewall 1311, accelerating the flow of plasma to the etching target 110.
[0054] A gap exists between the flow control structure 131 and the sidewall of the plasma reaction chamber 101, specifically between the inclined sidewall 1311 and the sidewall of the plasma reaction chamber 101. This gap prevents particle deposition on the flow control structure 131, thus affecting its function. Since the sidewall of the plasma reaction chamber 101 is provided with a chamber liner 108, a gap also exists between the flow control structure 131 and the chamber liner 108, specifically between the inclined sidewall 1311 and the chamber liner 108.
[0055] In embodiments of this application, the semiconductor device further includes a support structure 132, referenced to... Figure 2 As shown. The inclined sidewalls 1311 of the support structure 132 and the flow control structure 131 are connected. Through the connection between the support structure 132 and the flow control structure 131, the support structure 132 supports the flow control structure 131.
[0056] One end of the support structure 132 can be connected to the inclined sidewall 1311 of the flow control structure 131, and the other end can be connected to other structures in the plasma reaction chamber 101 to provide support, such as the electrode cover 104 or the chamber liner 108, see reference. Figure 2 As shown.
[0057] In the embodiments of this application, the material of the flow control structure 131 is metal, ceramic, or quartz. To enhance the lifespan of the flow control structure 131, a protective coating can also be sprayed onto its surface.
[0058] In the embodiments of this application, the shape of the vent 1312 matches the shape of the etching target 110. That is, the shape of the etching target 110 affects the shape of the vent 1312, and the shape of the vent 1312 changes as the etching target 110 changes.
[0059] As an example, when the etched target 110 is circular in shape, the vent hole 1312 is also circular in shape, see reference. Figure 3 or Figure 4 As shown. Reference Figure 5 As shown, the etching target focusing ring 105 surrounds the etching target 110, the shield 109 includes the etching target focusing ring 105, and the portion surrounded by the chamber liner 108 constitutes the internal space of the plasma reaction chamber 101. (Reference) Figure 6 As shown, when the etching target 110 is circular, a flow control structure 131 is provided in the plasma reaction chamber 101. The vent 1312 at the lower end of the flow control structure 131 is circular, and the area of the vent 1312 of the flow control structure 131 covers the area of the etching target 110.
[0060] As another example, when the etched target 110 is rectangular in shape, the vent hole 1312 is also rectangular in shape, see reference. Figure 7 or Figure 8 As shown. Reference Figure 9 As shown, the etching target focusing ring 105 surrounds the etching target 110, the shield 109 includes the etching target focusing ring 105, and the portion surrounded by the chamber liner 108 constitutes the internal space of the plasma reaction chamber 101. (Reference) Figure 10As shown, when the etching target 110 is rectangular, a flow control structure 131 is provided in the plasma reaction chamber 101. The vent 1312 at the lower end of the flow control structure 131 is rectangular, and the area of the vent 1312 of the flow control structure 131 covers the area of the etching target 110.
[0061] As one possible implementation, the shape and size of the vent 1312 are the same as those of the etching target 110, meaning the area of the vent 1312 is equal to the area of the etching target 110. This allows plasma to be guided to each region of the etching target 110 via the vent 1312, further improving etching uniformity. In the direction towards the etching target 110, the area containing the vent 1312 overlaps with the area of the etching target 110, which can further improve plasma utilization and uniformity.
[0062] In the embodiments of this application, the shape of the side of the inclined sidewall 1311 away from the etching target 110 matches the shape of the plasma reaction chamber 101. That is, the shape of the plasma reaction chamber 101 affects the shape of the upper end of the flow control structure 131, and the shape of the upper end of the flow control structure 131 changes as the plasma reaction chamber 101 changes. The matching shape of the upper end of the flow control structure 131 and the plasma reaction chamber 101 achieves uniform plasma flow.
[0063] As an example, when the plasma reaction chamber 101 is circular in shape, the upper end of the flow control structure 131 is also circular in shape, see reference. Figure 3 or Figure 4 As shown. Reference Figure 6 As shown, when the shape of the plasma reaction chamber 101 is circular, the upper end of the flow control structure 131 is circular.
[0064] In the embodiments of this application, the inclined sidewall 1311 of the flow control structure 131 can be an arc surface or a plane, thereby meeting various flow diversion requirements or process requirements. When the inclined sidewall 1311 of the flow control structure 131 is an arc surface, the flow control structure 131 forms a bowl-shaped structure.
[0065] As an example, see reference Figure 11As shown, when the vent 1312 at the lower end of the flow control structure 131 is circular and the upper end of the flow control structure 131 is also circular, the inclined sidewall 1311 of the flow control structure 131 can be planar. Along the direction toward the etching target 110, the distance between the inclined sidewalls 1311 of the flow control structure 131 gradually decreases, that is, along the direction toward the etching target 110, from the upper end to the lower end of the flow control structure 131, the size of the flow control structure 131 gradually decreases, so as to achieve better plasma flow along the inclined sidewall 1311 of the planar plane to the vent 1312.
[0066] As another example, see Figure 12 As shown, when the vent 1312 at the lower end of the flow control structure 131 is rectangular and the upper end of the flow control structure 131 is circular, the inclined sidewall 1311 of the flow control structure 131 can be planar. Along the direction toward the etching target 110, the distance between the inclined sidewalls 1311 of the flow control structure 131 gradually decreases, that is, along the direction toward the etching target 110, from the upper end to the lower end of the flow control structure 131, the size of the flow control structure 131 gradually decreases, so as to achieve better plasma flow along the inclined sidewall 1311 of the planar structure to the vent 1312.
[0067] In the embodiments of this application, the size of the vent hole 1312 can be the same along the direction toward the etching target 110, that is, the size of the vent hole 1312 does not change along the direction toward the etching target 110, and the sidewalls of the vent hole 1312 always maintain the same size. (Refer to...) Figures 11-12 As shown.
[0068] In the embodiments of this application, the size of the vent 1312 on the side closer to the etching target 110 is larger than the size of the vent 1312 on the side farther from the etching target 110. That is, if the side of the vent 1312 closer to the etching target 110 is the lower end of the vent 1312, and the side of the vent 1312 farther from the etching target 110 is the upper end of the vent 1312, then the size of the lower end of the vent 1312 is larger than the size of the upper end of the vent 1312, thereby achieving better guidance of plasma to the etching target 110 located at the lower end of the vent 1312, and further improving etching uniformity.
[0069] As one possible implementation, the vent 1312 is provided with a chamfered structure on the side near the etching target 110. That is, the size of the lower end of the vent 1312 is increased by using the chamfered structure provided at the lower end of the vent 1312, thereby achieving better drainage.
[0070] As another possible implementation, the size of the vent 1312 gradually increases along the direction toward the etching target 110, that is, the distance between the sidewalls of the vent 1312 gradually increases, thereby achieving better drainage by using the vent 1312 with gradually increasing size.
[0071] In the embodiments of this application, the sidewall direction of the vent 1312 is at a preset angle to the plane where the etching target 110 is located. That is, when the vent 1312 guides plasma to the etching target 110, the sidewall direction of the vent 1312 affects the plasma energy located in the edge region of the etching target 110, and can be introduced into the plane where the etching target 110 is located at a preset angle, thereby meeting different process requirements.
[0072] As one possible implementation, the preset angle is 45 degrees to 135 degrees, for example, the preset angle is 45 degrees, 60 degrees, 90 degrees, 120 degrees or 135 degrees.
[0073] As an example, the preset angle is 90 degrees, that is, the sidewall direction of the vent 1312 is perpendicular to the plane where the etching target 110 is located, for reference. Figure 11 and Figure 12 As shown.
[0074] In embodiments of this application, the flow control structure 131 further includes a guide ring 131c, which is disposed on the side of the inclined sidewall 1311 near the etching target 110, i.e., the guide ring 131c is disposed at the lower end of the flow control structure 131. (Refer to...) Figure 13 As shown, the guide ring 131c extends toward the etching target 110, so as to further guide the plasma flowing through the vent hole 1312 to the vicinity of the etching target 110. The guide ring 131c can be used to better adjust uniformity, etching rate and gas utilization rate according to different process requirements.
[0075] Specifically, the shape of the guide ring 131c is matched with the shape of the etching target 110, thereby using the guide ring 131c to better confine the plasma around the etching target 110.
[0076] Therefore, the flow control structure provided in this application embodiment can gather plasma and change the plasma flow direction and energy through inclined sidewalls and vents, thereby achieving uniform adjustment of the etching rate and improving etching uniformity.
[0077] The above description is merely a preferred embodiment of this application. Although this application has disclosed preferred embodiments above, it is not intended to limit this application. Any person skilled in the art can make many possible variations and modifications to the technical solutions of this application using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the scope of the technical solutions of this application. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall still fall within the protection scope of the technical solutions of this application.
Claims
1. A semiconductor device, characterized in that, The semiconductor device includes a plasma reaction chamber, a flow control structure, a jet nozzle, and a plasma coupling coil; the flow control structure is disposed in the plasma reaction chamber and between the etching target and the jet nozzle; The flow control structure includes an inclined sidewall, the intersection of the extensions of the inclined sidewall is located on one side of the etching target, and a vent is formed around the side of the inclined sidewall closest to the etching target. The jet nozzle is used to introduce reaction gas into the plasma reaction chamber, and the plasma coupling coil is used to process the reaction gas into plasma; The flow control structure is used to confine the plasma around the etching target.
2. The semiconductor device according to claim 1, characterized in that, The shape of the vent hole matches the shape of the etching target.
3. The semiconductor device according to claim 2, characterized in that, The shape and size of the vent hole are the same as the shape and size of the etching target.
4. The semiconductor device according to claim 1, characterized in that, The shape of the inclined sidewall away from the etching target matches the shape of the plasma reaction chamber.
5. The semiconductor device according to claim 1, characterized in that, The inclined sidewall is either an arc surface or a plane.
6. The semiconductor device according to claim 1, characterized in that, The size of the vent hole on the side closer to the etching target is larger than the size of the vent hole on the side farther away from the etching target.
7. The semiconductor device according to claim 6, characterized in that, The vent hole has a chamfered structure on the side closest to the etching target.
8. The semiconductor device according to claim 1, characterized in that, The semiconductor device further includes a support structure connected to the inclined sidewall of the current control structure, the support structure being used to support the current control structure.
9. The semiconductor device according to claim 1, characterized in that, The sidewall of the vent hole is at a preset angle to the plane where the etching target is located.
10. The semiconductor device according to claim 9, characterized in that, The preset angle is 45 degrees to 135 degrees.
11. The semiconductor device according to claim 1, characterized in that, A guide ring is provided on the side of the inclined sidewall closest to the etching target, and the guide ring extends toward the etching target.
12. The semiconductor device according to claim 11, characterized in that, The shape formed by the guide ring is matched with the shape of the etched target.