Substrate processing apparatus and substrate processing method

Abstract

The invention provides a substrate processing apparatus and a substrate processing method. Cleaning liquid remaining on a substrate after cleaning processing is replaced with replacement liquid having lower surface tension than the cleaning liquid. During the replacement, the nozzle device is arranged at a nozzle upper position which is higher than the processing cup. The displacement liquid is discharged downward from the nozzle device while the nozzle device moves horizontally from the center of the substrate to the outer peripheral end of the substrate. Then, the substrate is dried. During the drying, the gas is jetted downwards from the nozzle device, and the nozzle device is lowered from a nozzle upper position to a nozzle lower position close to the substrate W at a position above the center of the substrate. In addition, the nozzle device moves from the center of the substrate to the peripheral end of the substrate in the horizontal direction while continuing the injection of the gas.

Description

Technical Field

[0001] The present invention relates to a substrate processing device and a substrate processing method for performing predetermined processing on a substrate. Background Art

[0002] A substrate processing apparatus is used to perform various processes on substrates such as semiconductor substrates, FPD (Flat Panel Display) substrates of liquid crystal display devices or organic EL (Electro Luminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, or solar cell substrates.

[0003] In the manufacturing process of semiconductor devices, a pattern of a photosensitive resist film is formed on a substrate by, for example, photolithography. By supplying a chemical solution to the substrate on which the photosensitive resist film is formed (chemical solution treatment), various patterns such as wiring circuits are formed on the substrate.

[0004] In order to stop the process of the chemical liquid treatment and remove the chemical liquid remaining on the substrate after the pattern is formed, a cleaning process is performed. In the cleaning process, a cleaning liquid is supplied to the substrate after the chemical liquid treatment. Thus, the chemical liquid on the substrate is replaced by the cleaning liquid. Then, a drying process is performed to remove the cleaning liquid remaining on the substrate.

[0005] Various methods have been proposed to improve the cleanliness of a substrate after a drying process, such as a method of supplying IPA (isopropyl alcohol) vapor to a rotating substrate after a cleaning process in order to suppress the generation of watermarks and residual particles on the substrate (see, for example, Japanese Patent Publication No. 2016-167582).

[0006] IPA has a lower surface tension than pure water. Therefore, when IPA is used for the drying process of the substrate as described above, the damage to the pattern (collapse of the pattern, etc.) caused by IPA entering between the patterns is reduced. Summary of the invention

[0007] In order to further improve the cleanliness of the substrate after the drying process and further improve the reliability of various patterns formed on the substrate after the drying process, it is desired that the residual liquid remaining on the substrate after the pattern formation is appropriately removed.

[0008] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of appropriately removing residual liquid remaining on a substrate after pattern formation from the substrate.

[0009] A substrate processing device according to one embodiment of the present invention is a substrate processing device for removing residual liquid remaining on a substrate after pattern formation from the substrate, and comprises: a substrate holding portion, which holds the substrate and rotates the substrate around an axis in the vertical direction; a nozzle device, which has a liquid ejection portion, a first gas ejection portion, and a second gas ejection portion; a fluid supply system, which supplies a processing liquid having a lower surface tension than the residual liquid, a first gas, and a second gas to the nozzle device; and a relative movement device, which moves the nozzle device in a posture relative to the upper position between an upper position at a predetermined distance above the substrate held by the substrate holding portion and a lower position below the upper position and above the substrate. The substrate is moved relatively, and the nozzle device in the above-mentioned one posture is moved relatively in the horizontal direction relative to the above-mentioned substrate; and a control part, the liquid ejection part is formed to eject the above-mentioned processing liquid supplied from the above-mentioned fluid supply system downward when the above-mentioned nozzle device is in the above-mentioned one posture, the first gas ejection part is formed to eject the above-mentioned first gas supplied from the above-mentioned fluid supply system downward when the above-mentioned nozzle device is in the above-mentioned one posture, and the second gas ejection part is formed to eject the above-mentioned second gas supplied from the above-mentioned fluid supply system downward when the above-mentioned nozzle device is in the above-mentioned one posture. The gas is radially injected toward the outer peripheral end of the above-mentioned substrate in a top view, the above-mentioned control unit controls the above-mentioned substrate holding unit in a manner so as to rotate the above-mentioned substrate held by the above-mentioned substrate holding unit, and performs liquid replacement control on the above-mentioned fluid supply system and the above-mentioned relative movement device, so that in a state where the above-mentioned residual liquid exists on the above-mentioned substrate held by the above-mentioned substrate holding unit, the above-mentioned processing liquid is injected from the above-mentioned liquid injection unit of the above-mentioned nozzle device onto the above-mentioned substrate, and after the above-mentioned liquid replacement control, the first gas replacement control on the above-mentioned relative movement device is performed, so that in a state where the above-mentioned processing liquid exists on the above-mentioned substrate, the above-mentioned nozzle device is located at the above-mentioned upper position and the above-mentioned first gas injection unit is in contact with the above-mentioned substrate. Relative to the center, after the first gas replacement control, the second gas replacement control for controlling the fluid supply system and the relative moving device is performed, so that the first gas and the second gas are respectively ejected from the first gas injection part and the second gas injection part, and the nozzle device is lowered from the upper position to the lower position. After the second gas replacement control, the third gas replacement control for controlling the fluid supply system and the relative moving device is performed, so that the first gas and the second gas are respectively ejected from the first gas injection part and the second gas injection part, and the nozzle device at the lower position moves from the center of the substrate toward the outer peripheral end.

[0010] A substrate processing device according to another embodiment of the present invention is a substrate processing device for removing residual liquid remaining on a substrate after pattern formation from the substrate, and comprises: a substrate holding portion, which holds the substrate and rotates the substrate around an axis in the vertical direction; a nozzle device, which has a liquid ejection portion, a first gas ejection portion, and a second gas ejection portion; a fluid supply system, which supplies a processing liquid having a lower surface tension than the residual liquid, a first gas, and a second gas to the nozzle device; a relative moving device, which moves the nozzle device in a certain posture between an upper position above the substrate held by the substrate holding portion at a predetermined distance and a position above the upper position The control unit comprises a control unit, wherein the liquid ejecting unit is configured to eject the processing liquid supplied from the fluid supply system downward when the nozzle device is in the above-mentioned one posture, the first gas ejecting unit is configured to eject the first gas supplied from the fluid supply system downward when the nozzle device is in the above-mentioned one posture, and the second gas ejecting unit is configured to eject the first gas supplied from the fluid supply system downward when the nozzle device is in the above-mentioned one posture. In a state where the second gas supplied from the fluid supply system is radially injected toward the outer peripheral end of the substrate when viewed from above, the control unit controls the substrate holding unit in a manner that causes the substrate held by the substrate holding unit to rotate, and performs a first liquid replacement control on the relative moving device, so that when the residual liquid exists on the substrate held by the substrate holding unit, the nozzle device is located at the upper position and the liquid ejection unit is opposite to the center of the substrate. After the first liquid replacement control, the fluid supply system is controlled A second liquid replacement control is performed for controlling the fluid supply system and the relative moving device, so that the processing liquid is ejected from the liquid ejection portion, and the nozzle device in the upper position moves from the center of the substrate toward the outer peripheral end. After the second liquid replacement control, a gas replacement control is performed for controlling the fluid supply system and the relative moving device, so that in a state where the processing liquid exists on the substrate held by the substrate holding portion, the second gas is ejected from the second gas ejection portion of the nozzle device, and the first gas is ejected onto the substrate from the first gas ejection portion of the nozzle device.

[0011] A substrate processing method according to another embodiment of the present invention is a substrate processing method for removing residual liquid remaining on a substrate after pattern formation from the substrate using a nozzle device, the nozzle device comprising a liquid ejection portion, a first gas ejection portion and a second gas ejection portion, the liquid ejection portion being formed so as to eject the processing liquid supplied to the nozzle device downward when the nozzle device is in one posture, the first gas ejection portion being formed so as to eject the first gas supplied to the nozzle device downward when the nozzle device is in the one posture, the second gas ejection portion being formed so as to eject the second gas supplied to the nozzle device radially toward the outer peripheral end of the substrate in a plan view when the nozzle device is in the one posture and arranged in the space above the substrate held by the substrate holding portion, the processing liquid having a surface tension lower than that of the residual liquid, the substrate processing method comprising the following steps: a step of holding the substrate by the substrate holding portion and rotating the held substrate around an axis in the vertical direction; and a liquid replacement step of, in a state where the residual liquid exists on the substrate held by the substrate holding portion, The processing liquid is ejected from the liquid ejection portion onto the substrate by disposing the nozzle device above the substrate and supplying the processing liquid to the nozzle device; a first gas replacement step, after the liquid replacement step, disposing the nozzle device to an upper position above the substrate at a predetermined distance in a state where the processing liquid exists on the substrate, so that the first gas ejection portion is opposite to the center of the substrate; a second gas replacement step, after the first gas replacement step, supplying the first gas and the second gas to the nozzle device to eject the processing liquid onto the substrate; The first gas and the second gas are respectively injected from the first gas injection part and the second gas injection part, and the nozzle device is lowered to a lower position below the upper position and above the substrate; and a third gas replacement step, after the second gas replacement step, the first gas and the second gas are supplied to the nozzle device, and the first gas and the second gas are respectively injected from the first gas injection part and the second gas injection part, and the nozzle device in the lower position is moved from the center of the substrate toward the peripheral end.

[0012] A substrate processing method according to another embodiment of the present invention is a substrate processing method for removing residual liquid remaining on a substrate after pattern formation from the substrate using a nozzle device, the nozzle device comprising a liquid ejection portion, a first gas ejection portion and a second gas ejection portion, the liquid ejection portion being formed so as to eject the processing liquid supplied to the nozzle device downward when the nozzle device is in one posture, the first gas ejection portion being formed so as to eject the first gas supplied to the nozzle device downward when the nozzle device is in one posture, the second gas ejection portion being formed so as to eject the second gas supplied to the nozzle device radially toward the outer peripheral end of the substrate in a plan view when the nozzle device is in one posture and arranged in a space above the substrate held by a substrate holding portion, the processing liquid having a lower surface tension than the residual liquid, and the substrate processing method comprising the steps of: holding the substrate by the substrate holding portion and causing the held substrate to A step of rotating around an axis in the up-down direction; a first liquid replacement step, in a state in which the residual liquid exists on the substrate held by the substrate holding portion, the nozzle device in the one of the above-mentioned postures is arranged to an upper position above the substrate at a predetermined distance in such a manner that the liquid ejection portion is opposite to the center of the substrate; a second liquid replacement step, after the first liquid replacement step, the processing liquid is ejected from the liquid ejection portion by supplying the processing liquid to the nozzle device, and the nozzle device in the upper position is moved from the center of the substrate toward the outer peripheral end; and a gas replacement step, after the second liquid replacement step, in a state in which the processing liquid exists on the substrate, the second gas is ejected from the second gas ejection portion by arranging the nozzle device above the substrate and supplying the second gas to the nozzle device, and the first gas is ejected onto the substrate from the first gas ejection portion by supplying the first gas to the nozzle device.

[0013] According to the present invention, the processing liquid remaining on the substrate after pattern formation can be appropriately removed from the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic side view of a substrate processing apparatus according to one embodiment of the present invention.

[0015] Figure 2 Yes means Figure 1 A schematic top view of the internal structure of a substrate processing device.

[0016] Figure 3 yes Figure 1 A schematic perspective view of the nozzle device.

[0017] Figure 4 yes Figure 1 Schematic top view of the nozzle device.

[0018] Figure 5 yes Figure 4 QQ line longitudinal sectional view of the nozzle device.

[0019] Figure 6 Yes means Figure 1 A block diagram of a structure of a control system of a substrate processing apparatus.

[0020] Figure 7 It is used for illustration purposes Figure 1 A timing diagram showing an example of the operation of each component when a substrate processing apparatus performs a series of processes on a substrate.

[0021] Figure 8 It means to comply with Figure 7 A schematic side view of the operation of each component of the substrate processing device of the timing diagram.

[0022] Fig. 9 It means to comply with Figure 7 A schematic side view of the operation of each component of the substrate processing device of the timing diagram.

[0023] Fig.10 It means to comply with Figure 7 A schematic side view of the operation of each component of the substrate processing device of the timing diagram.

[0024] Fig.11 It means to comply with Figure 7 A schematic side view of the operation of each component of the substrate processing device of the timing diagram.

[0025] Fig.12 It means to comply with Figure 7 A schematic side view of the operation of each component of the substrate processing device of the timing diagram.

[0026] Fig.13 It means to comply with Figure 7 A schematic side view of the operation of each component of the substrate processing device of the timing diagram.

[0027] Fig.14 It means to comply with Figure 7 A schematic side view of the operation of each component of the substrate processing device of the timing diagram.

[0028] Fig.15 It means to comply with Figure 7 A schematic side view of the operation of each component of the substrate processing device of the timing diagram.

[0029] Fig.16 It means to comply with Figure 7 A schematic side view of the operation of each component of the substrate processing device of the timing diagram.

[0030] Fig.17 It means to comply with Figure 7 A schematic side view of the operation of each component of the substrate processing device of the timing diagram.

[0031] Fig.18 It means to comply with Figure 7 A schematic side view of the operation of each component of the substrate processing device of the timing diagram.

[0032] Fig.19 It is a schematic side view of a substrate processing apparatus according to another embodiment. DETAILED DESCRIPTION

[0033] Below, while referring to the attached Figure 1 The substrate processing device and substrate processing method according to one embodiment of the present invention are described below. In the following description, the substrate refers to a substrate for FPD (Flat Panel Display), a semiconductor substrate, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an optical magnetic disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell, etc., which is used in a liquid crystal display device or an organic EL (Electro Luminescence) display device. In addition, the upper surface of the substrate refers to the surface of the substrate facing upward, and the lower surface of the substrate refers to the surface of the substrate facing downward. The upper surface of the substrate can be a circuit forming surface (front surface) or a surface on the side opposite to the circuit forming surface (back surface). In addition, the substrate has a circular shape when viewed from above, excluding the notch.

[0034] Furthermore, the substrate processing apparatus described below performs liquid treatment, cleaning treatment and drying treatment on the substrate to be treated. In the present embodiment, liquid treatment is a treatment for forming a structure of a predetermined pattern on the upper surface of the substrate by supplying liquid to the upper surface of the substrate. In addition, cleaning treatment is a treatment for washing away the liquid from the upper surface of the substrate by supplying a cleaning liquid to the upper surface of the substrate after liquid treatment. Furthermore, drying treatment is a treatment for drying the substrate after supplying a treatment liquid having a lower surface tension than the cleaning liquid to the upper surface of the substrate after cleaning treatment and replacing the cleaning liquid remaining on the substrate with the treatment liquid. In the following description, the treatment liquid used in the drying treatment, i.e., the treatment liquid having a lower surface tension than the cleaning liquid, is referred to as a replacement liquid.

[0035] 1. Overview of the structure of the substrate processing apparatus

[0036] Figure 1 It is a schematic side view of a substrate processing apparatus according to one embodiment of the present invention. Figure 2 Yes means Figure 1A schematic top view of the internal structure of the substrate processing device 1. Figure 2 In the figure, only Figure 1 Some of the multiple structural elements of the substrate processing device 1. Figure 1 As shown, the substrate processing apparatus 1 includes a substrate holding device 20, a cup device 30, a liquid discharge device 39, a liquid supply device 40, a cleaning liquid supply system 50, and a replacement liquid supply system 60. In addition, the substrate processing apparatus 1 includes a first gas supply system 70, a second gas supply system 80, a third gas supply system 90, a nozzle device 100, a nozzle moving device 150, and a control unit 200.

[0037] The substrate processing apparatus 1 includes a chamber CH for accommodating the above-mentioned components. The chamber CH includes four side portions, a top portion, and a bottom portion. A transfer opening (not shown) for transferring a substrate between the inside of the chamber CH and the outside of the chamber CH is formed on one side portion of the chamber CH. In addition, a FFU (fan filter unit) 10 is provided on the top of the chamber CH. The FFU 10 generates a downward flow of clean air inside the chamber CH.

[0038] A substrate holding device 20 is provided at approximately the center of the bottom of the chamber CH. The substrate holding device 20 includes a substrate holding portion 21 and a rotation drive portion 22. The rotation drive portion 22 is, for example, a motor, and is fixed to the bottom of the chamber CH. The rotation drive portion 22 has a rotation shaft extending upward. The substrate holding portion 21 is connected to the upper end of the rotation shaft.

[0039] The substrate holding portion 21 is a rotating chuck of a so-called mechanical chuck type that holds the outer peripheral end of the substrate W. Specifically, the substrate holding portion 21 includes a circular plate-shaped rotating base 21a and a plurality of rotating holding pins 21b provided on the upper surface peripheral portion of the rotating base 21a. In the substrate holding portion 21, the lower surface peripheral portion and the outer peripheral end of the substrate W arranged on the rotating base 21a are held by the plurality of holding pins 21b. In this state, the substrate W is rotated in a horizontal posture by the operation of the rotation drive portion 22. Figure 1 and Figure 2 In FIG. 1 , the substrate W held by the substrate holding device 20 is indicated by a single-dot chain line.

[0040] The above-mentioned chemical treatment, cleaning treatment and drying treatment are performed by supplying various treatment liquids to the upper surface of the substrate W held and rotated by the substrate holding device 20. The cup device 30 and the liquid discharge device 39 are used to discard the treatment liquid scattered from the rotating substrate W during each treatment.

[0041] The cup device 30 includes an outer cup 30A, an inner cup 30B, and a cup driving portion 31. The outer cup 30A and the inner cup 30B each have a substantially cylindrical shape so as to surround the substrate holding portion 21 ( Figure 2 ) and is arranged in a manner extending in the vertical direction. The inner diameter of the outer support cup 30A is larger than the outer diameter of the inner support cup 30B. Therefore, the inner support cup 30B is arranged on the inner side of the outer support cup 30A. Moreover, the outer support cup 30A and the inner support cup 30B are each arranged in a manner that can move in the vertical direction.

[0042] The cup driving unit 31 includes an actuator such as a motor or an air cylinder. The cup driving unit 31 moves the outer cup 30A and the inner cup 30B between a cup upper position and a cup lower position that are predetermined in accordance with the processing performed on the substrate W.

[0043] The cup upper position of each cup 30A, 30B is a height position (position in the vertical direction) where the upper end of the cup is above the substrate W held by the substrate holding portion 21. Thus, each cup receives the processing liquid scattered from the substrate W when it is in the cup upper position. On the other hand, the cup lower position of each cup 30A, 30B is a height position where the upper end of the cup is below the substrate W held by the substrate holding portion 21. In the present embodiment, the cup upper position of the outer cup 30A is the same as the cup upper position of the inner cup 30B. In addition, the cup lower position of the outer cup 30A is the same as the cup lower position of the inner cup 30B.

[0044] The drain device 39 includes an outer container 39A and an inner container 39B corresponding to the outer cup 30A and the inner cup 30B, respectively. The outer container 39A and the inner container 39B each have an annular groove opening upward, and guide the treated liquid received by the corresponding cup to the waste equipment in the factory.

[0045] A chemical liquid nozzle 41 is provided in the chamber CH. The chemical liquid supply device 40 includes a chemical liquid supply system and a chemical liquid nozzle moving device (not shown). The chemical liquid nozzle 41 is supported by the chemical liquid nozzle moving device. The chemical liquid nozzle moving device moves the chemical liquid nozzle 41 at the center WC ( ) of the substrate W held by the substrate holding portion 21 during chemical liquid processing of the substrate W. Figure 2 ) and a standby position on the side of the substrate W. The liquid supply system of the liquid supply device 40 supplies liquid to the liquid nozzle 41 at the processing position during liquid processing of the substrate W. Thus, the liquid is supplied to the upper surface of the substrate W held and rotated by the substrate holding portion 21.

[0046] As the chemical solution, hydrofluoric acid (HF), a mixture of sulfuric acid and hydrogen peroxide (SPM), a mixture of ammonia water and hydrogen peroxide (SC1), a mixture of hydrochloric acid and hydrogen peroxide (SC2), dilute hydrofluoric acid (DHF), an organic base (such as tetramethylammonium hydroxide (TMAH)), or buffered hydrofluoric acid (BHF) is used.

[0047] In the chamber CH, a cleaning liquid nozzle 51 is further provided at a predetermined position above the substrate holding device 20 and the cup device 30. The cleaning liquid nozzle 51 is fixed in such a manner that its spray port faces the center WC of the substrate W held by the substrate holding portion 21. The cleaning liquid supply system 50 supplies cleaning liquid to the cleaning liquid nozzle 51 during the cleaning process of the substrate W. Thus, the cleaning liquid is supplied to the upper surface of the substrate W held and rotated by the substrate holding portion 21.

[0048] As the cleaning liquid, pure water (deionized water), carbonated water, ozone water, magnetic water, super-diluted ammonia water (above 1 ppm and below 100 ppm), super-diluted hydrochloric acid water (above 1 ppm and below 100 ppm), reduced water (hydrogen-rich water) or ionized water can be used.

[0049] The nozzle device 100 is supported by the nozzle moving device 150 in the chamber CH. Figure 2 As shown in FIG. 1 , the nozzle moving device 150 includes a base portion 153, a support shaft 154, and an arm 155. The base portion 153 is fixed to the bottom of the chamber CH so as to be located outside the outer cup 30A in a plan view. The support shaft 154 is provided so as to extend upward from the base portion 153 by a certain distance. An arm 155 extending in a horizontal direction is mounted on the upper end portion of the support shaft 154. The nozzle device 100 is mounted on the front end portion of the arm 155.

[0050] like Figure 1 As shown, the nozzle moving device 150 further includes a horizontal direction driving device 151 and a vertical direction driving device 152. The horizontal direction driving device 151 and the vertical direction driving device 152 are each built-in, for example. Figure 2 The base portion 153 includes an actuator such as a motor or a cylinder.

[0051] The horizontal direction driving device 151 rotates the support shaft 154 around the axis of the support shaft 154. In this case, the horizontal direction driving device 151 moves the nozzle device 100 in an arc shape between the space above the substrate W held by the substrate holding portion 21 and the standby position on the side of the substrate W when viewed from above during the drying process of the substrate W (see FIG. Figure 2 thick solid arrow).

[0052] The vertical driving device 152 moves the support shaft 154 vertically. Thus, the horizontal driving device 151 moves the nozzle device 100 between the nozzle upper position and the nozzle lower position in the space above the substrate W held by the substrate holding portion 21 during the drying process of the substrate W.

[0053] In the following description, the height position of the nozzle device 100 is assumed to represent the height position of the lower end of the nozzle device 100. The nozzle upper position is a height position above the cup upper position of the cups 30A and 30B and is a height position located above the substrate W held by the substrate holding portion 21 by a predetermined distance (for example, about 30 mm). The nozzle lower position is a height position below the nozzle upper position and is a height position above the substrate W held by the substrate holding portion 21.

[0054] The replacement liquid supply system 60 , the first gas supply system 70 , the second gas supply system 80 , and the third gas supply system 90 supply the replacement liquid, the first gas, the second gas, and the third gas, respectively, to the nozzle device 100 during the drying process of the substrate W.

[0055] As described above, the replacement liquid is a treatment liquid having a lower surface tension than the cleaning liquid used in the cleaning process immediately before the drying process. As such a treatment liquid, an organic solvent is used. In the present embodiment, IPA (isopropyl alcohol) is used as the replacement liquid. In addition, other organic solvents such as HFE (hydrofluoroether), methanol, ethanol or acetone can also be used instead of IPA as the replacement liquid. Moreover, the replacement liquid can also be a mixed liquid of an organic solvent and pure water.

[0056] In this embodiment, the first gas, the second gas, and the third gas are nitrogen. In addition, the first gas, the second gas, and the third gas only need to be inert gases, and argon gas or helium gas can be used instead of nitrogen. Moreover, the first gas, the second gas, and the third gas can be the same type of inert gas, or at least one gas can be an inert gas of a different type from the other gases.

[0057] 2. Structure of the nozzle device 100

[0058] The structure of the nozzle device 100 will be described. Figure 3 yes Figure 1 A schematic perspective view of the nozzle device 100 is shown in FIG. Figure 4 yes Figure 1 A schematic top view of a nozzle arrangement 100 , Figure 5 yes Figure 4 A longitudinal sectional view of the nozzle device 100 taken along line QQ.

[0059] like Figure 3As shown, the nozzle device 100 includes a nozzle body 101 having a substantially cylindrical shape. In the substrate processing apparatus 1, the nozzle device 100 is supported by the nozzle moving device 150 in a posture in which the axis (central axis) of the nozzle body 101 extends in the vertical direction.

[0060] The nozzle body 101 has an upper surface 110, a lower surface 120, and an outer peripheral surface 130. The upper surface 110 has a circular shape and faces upward when the nozzle device 100 is in a certain posture. The lower surface 120 has a circular shape and faces downward when the nozzle device 100 is in a certain posture. The central part of the lower surface 120 is concave in a mortar shape. The outer peripheral surface 130 is a cylindrical surface connecting the outer edge of the upper surface 110 and the outer edge of the lower surface 120.

[0061] The nozzle body 101 has two through holes 102 and 103 formed therein so as to extend in the vertical direction along the axis of the nozzle body 101 and to be close to each other. Figure 1 The replacement fluid pipe 61 is a part of the replacement fluid supply system 60. In the other through hole 103, a Figure 1 The first gas pipe 71 is a part of the first gas supply system 70 .

[0062] like Figure 5 As shown, when the replacement fluid pipe 61 is inserted into the through hole 102, the front end of the replacement fluid pipe 61 is located at the lower end of the nozzle device 100, and functions as a replacement fluid outlet 62 that sprays the replacement fluid downward. On the other hand, when the first gas pipe 71 is inserted into the through hole 103, the front end of the first gas pipe 71 is located at the lower end of the nozzle device 100, and functions as a first gas outlet 72 that sprays the first gas downward. Figure 3 and Figure 5 In FIG. 1 , the flow of the replacement fluid ejected from the nozzle device 100 through the replacement fluid pipe 61 is indicated by a thick solid arrow. In addition, the flow of the first gas ejected from the nozzle device 100 through the first gas pipe 71 is indicated by a thick dotted arrow.

[0063] like Figure 3 As shown, near the lower end of the outer peripheral surface 130 of the nozzle body 101, the second gas injection port 131 and the third gas injection port 132 extending in the circumferential direction are formed in an annular shape over the entire circumference of the outer peripheral surface 130. The third gas injection port 132 is located above the second gas injection port 131 and is close to the second gas injection port 131.

[0064] On the outer peripheral surface of the nozzle body 101, there is connected a Figure 1The second gas pipe 81 is a part of the second gas supply system 80, and is connected to the Figure 1 The third gas piping 91 is a part of the third gas supply system 90 .

[0065] like Figure 5 As shown, a gas flow path 141 is formed inside the nozzle body 101 to guide the second gas supplied from the second gas pipe 81 to the second gas injection port 131. In addition, a gas flow path 142 is formed inside the nozzle body 101 to guide the third gas supplied from the third gas pipe 91 to the third gas injection port 132.

[0066] Thus, when the second gas is supplied to the nozzle device 100, Figure 3 to Figure 5 As shown by the thick dashed arrow, the second gas is injected from the second gas injection port 131 through the second gas pipe 81 and the gas flow path 141. The flow of the second gas injected from the second gas injection port 131 spreads radially in a direction orthogonal to the axis of the nozzle body 101.

[0067] In addition, when the third gas is supplied to the nozzle device 100, Figure 3 to Figure 5 As shown by the thick double-dashed arrow in FIG. 1 , the third gas is ejected from the third gas ejection port 132 through the third gas pipe 91 and the gas flow path 142. The flow of the third gas ejected from the third gas ejection port 132 is radially diffused in a direction orthogonal to the axis of the nozzle body 101, similarly to the flow of the second gas.

[0068] 3. Control system of substrate processing device 1

[0069] The control system of the substrate processing device 1 is Figure 1 The structure of the control unit 200 will be described together. Figure 6 Yes means Figure 1 A block diagram of the structure of a control system of a substrate processing device 1. Figure 6 As shown, the control unit 200 includes a CPU (central processing unit) 201, a RAM (random access memory) 202, a ROM (read only memory) 203, and a storage device 204. The RAM 202 is used as a work area of ​​the CPU 201. The system program is stored in the ROM 203. The storage device 204 includes a storage medium such as a hard disk or a semiconductor memory, and stores a substrate cleaning program for performing the above-mentioned series of processes (chemical liquid processing, cleaning processing, and drying processing) on ​​the substrate W.

[0070] In addition, the substrate cleaning program may be provided in a state stored in a recording medium such as CD-ROM 209 and installed in ROM 203 or storage device 204. Alternatively, the substrate cleaning program may be sent from an external server of substrate processing apparatus 1 via a communication network and installed in ROM 203 or storage device 204.

[0071] The CPU 201 executes the substrate cleaning program to control the operation of each part of the substrate processing apparatus 1. Specifically, the control unit 200 controls the substrate holding device 20. Thus, the control unit 200 holds the substrate W carried into the substrate processing apparatus 1 on the substrate holding device 20. In addition, the control unit 200 releases the holding state of the substrate W by the substrate holding device 20 in order to carry out the substrate W from the substrate processing apparatus 1. In addition, the control unit 200 rotates the substrate W held by the substrate holding device 20 at a preset speed.

[0072] In addition, the control unit 200 controls the cup device 30. Figure 1 The outer cup 30A and the inner cup 30B each move between a cup upper position and a cup lower position.

[0073] In addition, the control unit 200 controls the chemical liquid supply device 40. Thus, the control unit 200 moves the chemical liquid nozzle 41 in the chamber CH during the chemical liquid treatment and supplies the chemical liquid to the chemical liquid nozzle 41. In addition, the control unit 200 controls the cleaning liquid supply system 50. Thus, the control unit 200 supplies the cleaning liquid to the cleaning liquid nozzle 51 during the cleaning treatment.

[0074] In addition, the control unit 200 controls the replacement liquid supply system 60. Thus, the control unit 200 supplies the replacement liquid to the nozzle device 100 when replacing the cleaning liquid on the substrate W with the replacement liquid during the drying process.

[0075] In addition, the control unit 200 controls the first gas supply system 70, the second gas supply system 80, and the third gas supply system 90. Thus, the control unit 200 supplies the first gas to the nozzle device 100 when removing the replacement liquid on the substrate W during the drying process. In addition, the control unit 200 supplies the second gas and the third gas to the nozzle device 100 during the drying process.

[0076] Furthermore, the control unit 200 controls the horizontal direction driving device 151 and the vertical direction driving device 152 of the nozzle moving device 150. Thus, the control unit 200 moves the nozzle device 100 in the chamber CH during the drying process.

[0077] 4. Operation of the Substrate Processing Apparatus 1

[0078] Description Figure 6The following is a specific operation example of the substrate processing apparatus 1 in which the CPU 201 executes the substrate cleaning program to perform a series of processes on the substrate W. Figure 7 It is used for illustration purposes Figure 1 1 is a timing chart showing an example of the operation of each component when the substrate processing apparatus 1 performs a series of processes on a substrate. Figures 8 to 18 It means to comply with Figure 7 1 is a schematic side view of the operation of each component of the substrate processing apparatus 1, which is a timing chart of FIG. 1. It is assumed that the diameter of the substrate W to be processed in this example is 300 mm.

[0079] exist Figure 7 The left end of shows ten items that are control targets of the operation of the substrate processing apparatus 1. The ten items are "chemical liquid", "cleaning liquid", "height position of nozzle", "horizontal position of nozzle", "replacement liquid", "first gas", "second and third gases", "height position of outer cup", "height position of inner cup" and "rotation speed of substrate", and are arranged in this order in the vertical direction from the top layer (first layer) to the bottom layer (tenth layer).

[0080] To the right of the ten items, the control contents corresponding to these items are shown in chronological order using a common time axis. To the right of the first-layer item "chemical liquid" is shown whether the chemical liquid is supplied from the chemical liquid supply device 40 to the chemical liquid nozzle 41 (supply or stop). To the right of the second-layer item "cleaning liquid" is shown whether the cleaning liquid is supplied from the cleaning liquid supply system 50 to the cleaning liquid nozzle 51 (supply or stop).

[0081] To the right of the item "height position of the nozzle device" on the third layer, the position of the nozzle device 100 in the substrate processing device 1 in the vertical direction (the upper position of the nozzle and the lower position of the nozzle) is shown. To the right of the item "horizontal position of the nozzle device" on the fourth layer, the position of the nozzle device 100 in the horizontal plane of the substrate processing device 1 is shown. The "standby position" shown as a horizontal position is the standby position of the nozzle device 100, which is pre-set to the position outside (to the side) of the outer support cup 30A. In addition, the "outer peripheral end of the substrate" is the position of the nozzle device 100 when the nozzle device 100 overlaps with the outer peripheral end of the substrate W in a plan view, that is, the nozzle device 100 is above the outer peripheral end of the substrate W. In addition, the "center of the substrate" is the position of the nozzle device 100 when the nozzle device 100 overlaps with the center WC of the substrate W in a plan view, that is, the nozzle device 100 is above the center WC of the substrate W.

[0082] On the right side of the fifth layer item "Replacement fluid" is shown whether the replacement fluid is supplied from the replacement fluid supply system 60 to the nozzle device 100 (supply or stop). On the right side of the sixth layer item "First gas" is shown whether the first gas is supplied from the first gas supply system 70 to the nozzle device 100 (supply or stop). On the right side of the seventh layer item "Second and third gases" is shown whether the second gas and the third gas are supplied from the second gas supply system 80 and the third gas supply system 90 to the nozzle device 100 (supply or stop).

[0083] The right side of the eighth-layer item "Outer cup height position" shows the vertical position of the outer cup 30A in the substrate processing apparatus 1. The right side of the ninth-layer item "Inner cup height position" shows the vertical position of the inner cup 30B in the substrate processing apparatus 1. The right side of the tenth-layer item "Substrate rotation speed" shows the change in the rotation speed of the substrate W held and rotated by the substrate holding device 20.

[0084] First, in the initial state (time point t0), the "chemical liquid" is in a state of stopping the supply to the chemical liquid nozzle 41. In addition, the "cleaning liquid" is in a state of stopping the supply to the cleaning liquid nozzle 51. In addition, the "replacement liquid", "first gas" and "second and third gases" are in a state of stopping the supply to the nozzle device 100. In addition, the "height position of the nozzle" is maintained at the upper position of the nozzle, the "horizontal position of the nozzle" is maintained at the standby position, and the "height position of the outer support cup" and the "height position of the inner support cup" are maintained at the lower position of the support cup. Moreover, in the initial state, since the substrate W is not held by the substrate holding device 20, the "rotation speed of the substrate" is 0rpm.

[0085] At time point t1, a substrate W is loaded into the chamber CH of the substrate processing device 1, and the substrate W is placed on the substrate holding portion 21. In addition, the substrate W is held by the substrate holding portion 21. Then, the liquid treatment of the substrate W is performed from time point t2 to time point t3. Specifically, the rotation of the substrate W held by the substrate holding portion 21 starts from time point t2. In addition, its rotation speed increases from 0 rpm to a relatively high first speed, and is maintained at the first speed. In this embodiment, the first speed is 1500 rpm.

[0086] When the rotation speed of the substrate W is maintained at the first speed, Figure 8 As shown, the chemical liquid nozzle 41 is disposed at a processing position above the substrate W. The chemical liquid L1 is ejected from the chemical liquid nozzle 41 toward the center WC of the substrate W for a predetermined period of time.

[0087] Thus, the liquid medicine treatment is carried out. During the liquid medicine treatment, the liquid medicine L1 will fly from the rotating substrate W. In order to receive the scattered liquid medicine L1, the outer support cup 30A is set to the upper position of the support cup just before the time point t2. Thus, the liquid medicine L1 received by the outer support cup 30A is discarded through the outer container 39A. Figure 8 In FIG. 1 , the height position of the upper end portion of the outer cup 30A in the upper position of the cup is indicated by symbol RP.

[0088] Next, after the discharge of the chemical liquid L1 from the chemical liquid nozzle 41 to the substrate W is stopped, the cleaning process of the substrate W is performed from time point t3 to time point t4. During the cleaning process, the rotation speed of the substrate W is maintained at the first speed. Fig. 9 As shown, the cleaning liquid L2 is ejected from the cleaning liquid nozzle 51 toward the center WC of the substrate W. As a result, the liquid film of the cleaning liquid L2 spreads over the entire upper surface of the substrate W, and the chemical liquid L1 remaining on the substrate W is replaced by the cleaning liquid L2.

[0089] exist Fig. 9 , a partially enlarged cross-sectional view of the substrate W during the cleaning process is shown in the frame of the double-dashed line. According to the cross-sectional view, a plurality of grooves having a depth in a direction orthogonal to the substrate W (in this example, the vertical direction) are formed in a predetermined pattern on the upper surface of the substrate W. The cleaning liquid L2 is filled in the entire interior of each groove.

[0090] Thus, the cleaning process is performed. During the cleaning process, the main cleaning liquid L2 is scattered from the rotating substrate W. In order to receive the scattered cleaning liquid L2, the inner cup 30B is set to the upper position of the cup just before the time point t3. Thus, the cleaning liquid L2 received by the inner cup 30B is discarded through the inner container 39B. Fig. 9 In the following predetermined drawings, the height position of the upper end portion of the inner cup 30B in the cup upper position is indicated by symbol RP.

[0091] Next, after the cleaning process is completed, the substrate is dried from time t4 to time t6. In the drying process, first, as a pre-process, a process of replacing the cleaning liquid L2 remaining on the substrate W with the replacement liquid L3 is performed from time t4 to time t5. The time points t41 and t42 described below represent specific time points between time t4 and time t5.

[0092] Specifically, as time t4 passes, the nozzle device 100 is moved horizontally from the standby position to the center of the substrate while the height position of the nozzle device 100 is maintained at the nozzle upper position HP. The nozzle upper position HP is a height position above the upper positions of the outer cup 30A and the inner cup 30B. Fig.10 As shown, the lower end portion ( Figure 5The replacement liquid ejection port 62 and the first gas ejection port 72 are opposite to the center WC of the substrate W.

[0093] After time t4, the second gas and the third gas are further supplied from the second gas supply system 80 and the third gas supply system 90 to the nozzle device 100. Fig.10 As shown by the thick solid arrow in FIG. 1 , from the vicinity of the lower end of the nozzle device 100 (specifically, Figure 5 The second gas injection port 131 and the third gas injection port 132 of the nozzle device 100 form a flow F23 of the second gas and the third gas in the horizontal direction. In this embodiment, the flow rate of the second gas supplied to the nozzle device 100 is 72.5 L / min, and the flow rate of the third gas supplied to the nozzle device 100 is also 72.5 L / min.

[0094] Furthermore, after time t4, the substrate holding device 20 is controlled so that the rotation speed of the substrate W is reduced from the first speed to a second speed lower than the first speed and maintained at the second speed. In the present embodiment, the second speed is 100 rpm.

[0095] At time point t41 after a short period of time has passed since time point t4, replacement fluid L3 is supplied from replacement fluid supply system 60 to nozzle device 100. In this embodiment, the flow rate of replacement fluid L3 supplied to nozzle device 100 is 0.1 L / min or more and 0.5 L / min or less. Fig.11 As shown, from the lower end of the nozzle device 100 ( Figure 5 The replacement liquid outlet 62) ejects the replacement liquid L3 toward the center WC of the substrate W. As a result, the liquid film of the replacement liquid L3 spreads over the entire upper surface of the substrate W. Fig.11 As shown in the upper layer within the double-dashed line frame, the replacement liquid L3 ejected in a direction perpendicular to the substrate W is smoothly guided to the inside of the plurality of grooves formed on the substrate W. In addition, since the replacement liquid L3 is ejected from the nozzle device 100 at the nozzle upper position HP, it collides with the surface of the substrate W with high energy compared to the case where it is ejected from the nozzle device 100 at the nozzle lower position. As a result, the cleaning liquid L2 remaining in the groove located at the center WC of the substrate W is efficiently replaced by the replacement liquid L3.

[0096] However, in the area other than the center WC of the substrate W, since the replacement liquid L3 flows in the horizontal direction toward the peripheral edge of the substrate W, it is difficult to enter the interior of each groove. Fig.11As shown in the lower layer of the double-dashed line frame, it is highly likely that the cleaning liquid L2 remains inside most of the grooves. Therefore, in this example, from time point t42 after a small period of time has passed since time point t41 to time point t5, the nozzle device 100 is moved horizontally from the center of the substrate to the outer peripheral end of the substrate while the height position of the nozzle device 100 is maintained at the nozzle upper position HP.

[0097] In this case, if Fig.12 As shown in FIG. 1 , while the nozzle device 100 is moving, the cleaning liquid L2 in the tank directly below the nozzle device 100 is forcibly replaced by the replacement liquid L3. Fig.13 As shown, at time t5, the nozzle device 100 reaches the outer peripheral end of the substrate, whereby all the grooves on the substrate W are filled with the replacement liquid L3 and the cleaning liquid is removed. The time from time t42 to time t5 is, for example, 5 seconds.

[0098] As described above, in the process of replacing the cleaning liquid L2 on the substrate W with the replacement liquid L3, the nozzle device 100 is maintained at the nozzle upper position HP. In addition, as described above, the nozzle upper position HP is located above the cup upper positions of the outer cup 30A and the inner cup 30B. Therefore, when the replacement liquid L3 is sprayed toward the outer peripheral end of the substrate W and the vicinity thereof, the nozzle device 100 does not interfere with the outer cup 30A and the inner cup 30B.

[0099] Next, as a post-drying process, a process of removing the replacement liquid L3 remaining on the substrate W is performed from time t5 to time t6. Time t51, time t52, time t53, and time t54 described below represent specific time points between time t5 and time t6.

[0100] Specifically, as time t5 passes, the supply of the replacement fluid L3 from the replacement fluid supply system 60 to the nozzle device 100 is stopped. Fig.14 As shown, the nozzle device 100 is moved in the horizontal direction from the outer peripheral end of the substrate to the center of the substrate while the height position of the nozzle device 100 is maintained at the nozzle upper position HP.

[0101] Next, at time point t51 after a short period of time has passed since time point t5, the first gas is supplied from the first gas supply system 70 to the nozzle device 100 while the nozzle device 100 is located above the center WC of the substrate W. In this embodiment, the flow rate of the first gas supplied to the nozzle device 100 is 5 L / min, 25 L / min, or 50 L / min. In this case, Fig.15 As shown, from the lower end of the nozzle device 100 ( Figure 5The first gas injection port 72 of the substrate W is used to inject the first gas toward the center WC of the substrate W. Figure 15 to Figure 18 In FIG. 1 , the flow F1 of the first gas is indicated by a thick solid arrow.

[0102] At this time, the nozzle device 100 is at the nozzle upper position HP. Therefore, a relatively large distance is ensured between the nozzle device 100 and the substrate W. Therefore, the impact generated when the first gas ejected from the nozzle device 100 collides with the substrate W is sufficiently low compared to the case where the first gas is ejected when the nozzle device 100 is at the nozzle lower position. Fig.15 As shown in the frame of the two-dot chain line, at time point t51, the replacement liquid L3 on the substrate W is hardly affected by the first gas.

[0103] Next, at time t52, the rotation speed of the substrate W is increased from the second speed to a third speed that is higher than the second speed and lower than the first speed, and is maintained at the third speed. In the present embodiment, the third speed is 300 rpm.

[0104] In addition, from time point t52 to time point t53, as Fig.16 As shown, the height position of the nozzle device 100 is lowered from the nozzle upper position HP to the nozzle lower position LP. The nozzle lower position LP is a height position below the nozzle upper position HP and above the substrate W. As a result, the impact degree of the first gas ejected from the nozzle device 100 when colliding with the substrate W gradually increases.

[0105] At this time, if Fig.16 As shown in the double-dashed line frame, the first gas ejected in a direction perpendicular to the substrate W is smoothly guided to the inside of the plurality of grooves of the pattern formed on the substrate W. As a result, the replacement liquid L3 remaining in the groove located at the center WC of the substrate W is completely removed by the first gas at time t53.

[0106] However, in the area other than the center WC of the substrate W, since the first gas cannot be sprayed toward the bottom of each groove, it is difficult to completely remove the replacement liquid L3 remaining inside the groove. Therefore, in this example, from time point t53 to time point t6, the nozzle device 100 is moved horizontally from the center of the substrate to the outer peripheral end of the substrate while the height position of the nozzle device 100 is maintained at the nozzle lower position LP. In this case, Fig.17 As shown in FIG. 1 , while the nozzle device 100 is moving, the replacement liquid L3 in the tank directly below the nozzle device 100 is forcibly blown away and removed by the first gas. Fig.18 As shown, when the nozzle device 100 reaches the outer peripheral end of the substrate at time t6, the replacement liquid L3 in all grooves on the substrate W is completely removed, and the substrate W is dried. The time from time t53 to time t6 is, for example, 10 seconds.

[0107] In addition, when the outer cup 30A and the inner cup 30B are in the cup upper position, if the nozzle device 100 in the nozzle lower position LP moves toward the outer peripheral end of the substrate W, there is a high possibility that the nozzle device 100 and the outer cup 30A and the inner cup 30B interfere with each other. Therefore, in this example, at time point t54 just before time point t6 when the nozzle device 100 reaches the outer peripheral end of the substrate, the height position of the outer cup 30A and the inner cup 30B is changed from the cup upper position to the cup lower position.

[0108] As described above, the drying process is completed at time t6. After the drying process is completed, the supply of the first gas, the second gas, and the third gas to the nozzle device 100 is stopped. In addition, the height position of the nozzle device 100 is adjusted to the nozzle upper position HP, and the nozzle device 100 returns to the standby position. In addition, the rotation of the substrate W is stopped. In this state, the substrate W is unloaded from the chamber CH of the substrate processing device 1.

[0109] 5. Effects of implementation methods

[0110] (a) In the above-mentioned substrate processing device 1, in the pre-process of the drying process, the cleaning liquid remaining on the substrate W is replaced by the replacement liquid through the cleaning process. Specifically, the nozzle device 100 is configured to the nozzle upper position HP, and the replacement liquid outlet 62 is opposite to the center WC of the substrate W. In this state, the replacement liquid is sprayed downward from the replacement liquid outlet 62 of the nozzle device 100. In addition, the nozzle device 100 moves from the center of the substrate to the outer peripheral end of the substrate in the horizontal direction. In this case, the nozzle device 100 is maintained at a height position away from the substrate W compared to the case where the nozzle device 100 is in the nozzle lower position LP. In particular, the nozzle upper position HP is above the upper ends of the outer support cup 30A and the inner support cup 30B in the support cup upper position. Therefore, when the nozzle device 100 moves toward the outer peripheral end of the substrate, the nozzle device 100 and the outer support cup 30A and the inner support cup 30B do not interfere with each other.

[0111] In addition, when the nozzle device 100 moves horizontally from the center of the substrate to the outer peripheral end of the substrate, the replacement liquid is sprayed in a direction orthogonal to the substrate W in a large range on the upper surface of the substrate W. At this time, the replacement liquid is sprayed from the nozzle upper position HP, and collides with the surface of the substrate W with high energy compared with the case of spraying from the nozzle lower position LP. Therefore, the cleaning liquid remaining in the groove on the substrate W is efficiently replaced by the replacement liquid, and the cleaning liquid remaining in the groove is smoothly removed.

[0112] Next, in the post-process of the drying treatment, the operation of replacing the replacement liquid remaining on the substrate W with the first gas to dry is performed. Specifically, the nozzle device 100 is arranged at the nozzle upper position HP, and the first gas injection port 72 is opposite to the center WC of the substrate W. In this state, the first gas is injected downward from the first gas injection port 72 of the nozzle device 100. While maintaining the state of injecting the first gas, the nozzle device 100 is lowered from the nozzle upper position HP to the nozzle lower position LP. At this time, the impact degree generated when the first gas injected from the first gas injection port 72 collides with the substrate W increases smoothly along with the movement of the nozzle device 100 from the nozzle upper position HP to the nozzle lower position LP. Therefore, compared with the case where the injection of the first gas is started when the nozzle device 100 is in the state of the nozzle lower position LP, the change of the impact applied to the replacement liquid on the substrate W is moderate. Therefore, the scattering of the replacement liquid caused by the collision of the first gas with the substrate W is reduced. As a result, the reduction in the cleanliness of the substrate W caused by the replacement liquid scattered from the substrate W adhering to the substrate W again is suppressed.

[0113] Then, in a state where the nozzle device 100 is in the nozzle lower position LP and the spraying of the first gas continues, the nozzle device 100 moves horizontally from the center of the substrate to the outer peripheral end of the substrate. In this case, the first gas is sprayed in a large range on the upper surface of the substrate W in a direction orthogonal to the substrate W. As a result, the replacement liquid remaining inside the multiple grooves on the substrate W is efficiently replaced by the first gas. Therefore, the replacement liquid remaining inside each groove is smoothly removed, and the substrate W is dried. During this drying, since the replacement liquid has a lower surface tension than the cleaning liquid, the pattern formed on the substrate W is not easily damaged (collapse of the pattern, etc.) by the surface tension of the replacement liquid. As a result, the cleaning liquid remaining on the substrate W after the pattern is formed can be properly removed from the substrate W.

[0114] (b) When the nozzle device 100 is located in the space above the substrate W, the second gas is ejected from the second gas ejection port 131. In this case, at the position above the substrate W, the flow of the second gas is formed in a manner of spreading in a planar manner in a direction parallel to the upper surface of the substrate W. Thus, particles scattered at a position above the second gas ejection port 131 are suppressed from falling onto the substrate W. Therefore, the cleanliness of the substrate W after drying is suppressed from being reduced.

[0115] (c) When the nozzle device 100 is in the space above the substrate W, the second gas is ejected from the second gas ejection port 131, and the third gas is ejected from the third gas ejection port 132. The flow of the third gas ejected from the third gas ejection port 132 blocks the gas flow between the space above the third gas ejection port 132 and the space below the third gas ejection port 132. Thus, pollutants such as particles are further prevented from falling onto the substrate W from the space above the third gas ejection portion.

[0116] In addition, when the nozzle device 100 is in one posture, the third gas injection port 132 is located above the second gas injection port 131. Therefore, when the second gas and the third gas are injected simultaneously from the nozzle device 100, the space below the third gas injection port 132 and above the substrate W can be filled with the second gas. Therefore, the space surrounding the substrate W can be maintained as a clean and less reactive environment, that is, a chemically stable environment.

[0117] (d) As described above, the nozzle upper position HP is a height position above the cup upper positions of the outer cup 30A and the inner cup 30B. On the other hand, the nozzle lower position LP is a height position below the nozzle upper position HP and above the substrate W.

[0118] Here, it is preferred that the nozzle lower position LP is set so that when the second gas and the third gas are ejected from the nozzle device 100 in the space above the substrate W, at least a portion of the openings of the two gas injection ports (131, 132) are directed toward the space above the upper ends of the two supporting cups (30A, 30B).

[0119] In this case, while the nozzle device 100 is present in the space above the substrate W, the flow of the gas ejected from at least a portion of the openings of the two gas ejection ports (131, 132) blocks the gas flow between the space above the upper ends of the two cups (30A, 30B) and the space below the upper ends of the two cups (30A, 30B). As a result, the space inside the two cups (30A, 30B) is substantially sealed, thereby reducing the attachment of pollutants such as particles floating in the space surrounding the two cups (30A, 30B) to the substrate W.

[0120] 6. Other Implementation Methods

[0121] (a) In the substrate processing apparatus 1 of the above embodiment, in the pre-process of the drying process, the nozzle device 100 at the nozzle upper position HP ejects the replacement liquid while the nozzle device 100 moves from the center of the substrate to the outer peripheral end of the substrate. This operation is referred to as the first operation.

[0122] In addition, in the substrate processing apparatus 1 of the above-described embodiment, in the post-process of the drying process, the first gas is ejected toward the center WC of the substrate W, and the nozzle device 100 is lowered from the nozzle upper position HP to the nozzle lower position LP. Then, the first gas is ejected from the nozzle device 100 at the nozzle lower position LP, and the nozzle device 100 moves from the center of the substrate to the outer peripheral end of the substrate. This series of actions is referred to as the second action.

[0123] As described above, the first action and the second action are effective for properly removing the cleaning liquid remaining on the substrate W after the cleaning process from the substrate W. Therefore, the substrate processing device 1 can also be configured to remove the replacement liquid on the substrate W by an action different from the second action in the post-process of the drying process when the first action is performed in the pre-process of the drying process. As an action different from the second action, for example, in the post-process of the drying process, the substrate W is rotated at a high rotation speed instead of spraying gas onto the substrate W.

[0124] In addition, the substrate processing apparatus 1 may also be configured to replace the cleaning liquid on the substrate W with the replacement liquid in the previous step of the drying process by an action different from the first action when the second action is performed in the subsequent step of the drying process. As an action different from the first action, for example, the replacement liquid can be supplied only to the center WC of the rotating substrate W in the previous step of the drying process.

[0125] (b) In the substrate processing apparatus 1 of the above-described embodiment, the replacement liquid supply system 60 may be configured to supply the replacement liquid heated to a predetermined temperature to the nozzle device 100 . Fig.19 FIG. 1 is a schematic side view of a substrate processing apparatus 1 according to another embodiment. Fig.19 The structure and operation of the substrate processing device 1 are described in detail with respect to the above-mentioned embodiment. Figure 1 The structure and operation of the substrate processing device 1 are different.

[0126] like Fig.19 As shown, in the substrate processing apparatus 1 of this example, the replacement liquid supply system 60 includes a replacement liquid supply source 63 and a replacement liquid temperature adjustment unit 64. The replacement liquid supply source 63 is composed of, for example, a liquid tank storing the replacement liquid, and supplies the replacement liquid to the replacement liquid temperature adjustment unit 64. The replacement liquid temperature adjustment unit 64 heats the replacement liquid supplied from the replacement liquid temperature adjustment unit 64 to a temperature higher than normal temperature (for example, 25°C). Specifically, the replacement liquid temperature adjustment unit 64 adjusts the temperature of the replacement liquid to about 70°C by heating the replacement liquid.

[0127] In this case, in the pre-process of the drying process, a replacement liquid at about 70°C can be supplied from the replacement liquid supply system 60 to the nozzle device 100. As a result, the cleaning liquid remaining on the substrate W after the cleaning process is replaced by the replacement liquid having a temperature higher than normal temperature. In addition, by supplying the replacement liquid having a temperature higher than normal temperature to the substrate W, the temperature of the substrate W can be maintained higher than normal temperature. As a result, in the post-process of the drying process, the replacement liquid on the substrate W is easily evaporated, and the time required for drying the substrate W can be shortened.

[0128] (c) In the substrate processing apparatus 1 of the above embodiment, a mechanical chuck type rotary chuck for holding the outer peripheral end of the substrate W is used as the substrate holding portion 21, but the present invention is not limited thereto. As the substrate holding portion 21, a suction type rotary chuck for holding the lower surface center of the substrate W by suction may also be used.

[0129] (d) In the substrate processing device 1 of the above-mentioned embodiment, the upper cup position of the outer cup 30A is the same as the upper cup position of the inner cup 30B, and the lower cup position of the outer cup 30A is the same as the lower cup position of the inner cup 30B, but the present invention is not limited to this. The upper cup position of the outer cup 30A and the upper cup position of the inner cup 30B may also be different from each other. In addition, the lower cup position of the outer cup 30A and the lower cup position of the inner cup 30B may also be different from each other. Moreover, the outer cup 30A and the inner cup 30B may also be constructed so as not to interfere with each other and each can move up and down independently. In this case, it is preferred that the nozzle upper position HP of the nozzle device 100 is set at a position above the upper end of the outer cup 30A in the upper cup position and the upper end of the inner cup 30B in the upper cup position.

[0130] (e) In the post-process of the drying treatment of the above-mentioned embodiment, in order to prevent the nozzle device 100 from interfering with the outer cup 30A and the inner cup 30B, the outer cup 30A and the inner cup 30B are lowered from the upper cup position to the lower cup position during the horizontal movement of the nozzle device 100 in the nozzle lower position LP, but the present invention is not limited to this.

[0131] Because the size of the nozzle device 100 is sufficiently small, even if the first gas is sprayed from the nozzle device 100 toward the outer peripheral end of the substrate W, the nozzle device 100 will not interfere with the outer cup 30A and the inner cup 30B that are located on the cup. In this case, the outer cup 30A and the inner cup 30B can be maintained in the position on the cup during the drying process.

[0132] In addition, if the nozzle device 100 can be moved horizontally within a range that does not interfere with the outer cup 30A and the inner cup 30B located on the cup to spray the first gas to the entire pattern forming area on the substrate W, the range of horizontal movement of the nozzle device 100 can also be limited. Alternatively, if the substrate W can be fully dried as a whole by moving the nozzle device 100 horizontally within a range that does not interfere with the outer cup 30A and the inner cup 30B located on the cup, the range of horizontal movement of the nozzle device 100 can also be limited. Here, limiting the range of horizontal movement of the nozzle device 100 means that the nozzle device 100 is moved horizontally within a range from the center of the substrate to a position a certain distance inside from the outer peripheral end of the substrate. In this case, the outer cup 30A and the inner cup 30B can also be kept at the position on the cup during the drying process.

[0133] (f) The nozzle device 100 of the above embodiment has two gas injection ports 131 and 132 formed on the outer peripheral surface 130, but the present invention is not limited thereto. One of the gas injection ports 131 and 132 may not be formed.

[0134] 7. Correspondence between each component of the claims and each part of the embodiments

[0135] The following describes examples of correspondence between the components of the claims and the components of the embodiments, but the present invention is not limited to the following examples. As the components of the claims, various other components having the structures or functions described in the claims can also be used.

[0136] In the above-mentioned embodiment, the substrate processing device 1 is an example of a substrate processing device, the cleaning liquid remaining on the substrate W after the cleaning process is an example of residual liquid, the substrate holding device 20 is an example of a substrate holding part, the replacement liquid nozzle 62 is an example of a liquid nozzle part, the first gas nozzle 72 is an example of a first gas nozzle part, the second gas nozzle 131 is an example of a second gas nozzle part, and the nozzle device 100 is an example of a nozzle device.

[0137] In addition, the replacement liquid is an example of a processing liquid, the first gas is an example of a first gas, the second gas is an example of a second gas, the replacement liquid supply system 60, the first gas supply system 70, the second gas supply system 80 and the third gas supply system 90 are examples of fluid supply systems, the nozzle upper position HP is an example of an upper position, the nozzle lower position LP is an example of a lower position, the nozzle moving device 150 is an example of a relative moving device, and the control unit 200 is an example of a control unit.

[0138] In addition, the inner cup 30B is an example of a processing cup, the third gas injection port 132 is an example of a third gas injection unit, the third gas is an example of a third gas, the outer peripheral surface 130 of the nozzle body 101 is an example of an outer peripheral surface, and the replacement fluid temperature adjustment unit 64 is an example of a temperature adjustment unit.

[0139] In addition, the control of the substrate processing apparatus 1 corresponding to the overall operation of the post-drying process is an example of gas replacement control. Fig.14 As shown in FIG. 1 , the control of the substrate processing apparatus 1 when the nozzle device 100 at the nozzle upper position HP is moved horizontally from the outer peripheral end of the substrate to the center of the substrate in the post-process of the drying process is an example of the first gas replacement control. Fig.15 and Fig.16 As shown in FIG. 1 , the control of the substrate processing apparatus 1 when the nozzle device 100 descends from the nozzle upper position HP to the nozzle lower position LP while the first gas is ejected toward the center WC of the substrate W is an example of the second gas replacement control. Fig.17 and Fig.18 As shown, the control of the substrate processing apparatus 1 when the nozzle device 100 is horizontally moved from the center of the substrate toward the outer peripheral end of the substrate while injecting the first gas is an example of the third gas replacement control.

[0140] In addition, the control of the substrate processing apparatus 1 corresponding to the overall operation of the pre-process of the drying process is an example of liquid replacement control. Fig.10 As shown in FIG. 1 , the control of the substrate processing apparatus 1 when the nozzle device 100 at the nozzle upper position HP in the pre-process of the drying process moves horizontally from the standby position to the center of the substrate is an example of the first liquid replacement control. Figure 11 to Figure 13 As shown, the control of the substrate processing apparatus 1 in which the nozzle device 100 is horizontally moved from the center of the substrate toward the outer peripheral end of the substrate while ejecting the replacement liquid is an example of the second liquid replacement control.

[0141] 8. Summary of implementation methods

[0142] (Item 1) The substrate processing apparatus of Item 1 is a substrate processing apparatus for removing residual liquid remaining on a substrate after pattern formation from the substrate, and comprises:

[0143] A substrate holding portion that holds the substrate and rotates the substrate around an axis in a vertical direction;

[0144] A nozzle device having a liquid ejection portion, a first gas ejection portion, and a second gas ejection portion;

[0145] a fluid supply system for supplying a treatment liquid having a lower surface tension than the residual liquid, a first gas, and a second gas to the nozzle device;

[0146] a relative moving device that moves the nozzle device in one posture relative to the substrate between an upper position that is a predetermined distance above the substrate held by the substrate holding portion and a lower position that is lower than the upper position and higher than the substrate, and moves the nozzle device in the one posture relative to the substrate in a horizontal direction; and

[0147] Control Department,

[0148] The liquid ejection portion is formed so as to eject the processing liquid supplied from the fluid supply system downward when the nozzle device is in the one posture.

[0149] The first gas injection portion is formed so as to inject the first gas supplied from the fluid supply system downward when the nozzle device is in the one posture.

[0150] The second gas injection portion is formed so as to radially inject the second gas supplied from the fluid supply system toward the outer peripheral end of the substrate in a plan view when the nozzle device is in the one posture and arranged in the space above the substrate held by the substrate holding portion.

[0151] Regarding the above control unit,

[0152] controlling the substrate holding portion so that the substrate held by the substrate holding portion rotates,

[0153] performing liquid replacement control for controlling the fluid supply system and the relative moving device so that the processing liquid is ejected onto the substrate from the liquid ejection portion of the nozzle device in a state where the residual liquid exists on the substrate held by the substrate holding portion,

[0154] After the liquid replacement control, a first gas replacement control is performed to control the relative moving device, so that the nozzle device is located at the upper position and the first gas injection portion is opposite to the center of the substrate in a state where the processing liquid is present on the substrate.

[0155] After the first gas replacement control, a second gas replacement control is performed to control the fluid supply system and the relative moving device, so that the first gas and the second gas are respectively injected from the first gas injection part and the second gas injection part, and the nozzle device is lowered from the upper position to the lower position.

[0156] After the second gas replacement control, the third gas replacement control is performed to control the fluid supply system and the relative moving device, so that the first gas and the second gas are respectively ejected from the first gas injection part and the second gas injection part, and at the same time, the nozzle device in the lower position moves from the center of the substrate toward the outer peripheral end.

[0157] In the substrate processing device, residual liquid on the substrate is replaced with processing liquid by liquid replacement control. Then, the nozzle device is configured to the upper position by the first gas replacement control, and the first gas injection part is opposite to the center of the substrate. In this state, the gas is injected downward from the first gas injection part of the nozzle device by the second gas replacement control. While maintaining the state of injecting gas downward from the first gas injection part, the nozzle device is lowered from the upper position to the lower position. At this time, the impact degree generated when the first gas injected from the first gas injection part collides with the substrate increases smoothly as the nozzle device moves from the upper position to the lower position. Therefore, compared with the case where the injection of the first gas is started when the nozzle device is in the lower position, the change in the impact applied to the processing liquid on the substrate is moderate. Therefore, the scattering of the processing liquid caused by the collision of the first gas with the substrate is reduced. As a result, the reduction in the cleanliness of the substrate caused by the processing liquid scattered from the substrate adhering to the substrate again is suppressed.

[0158] A plurality of grooves having a depth in a direction orthogonal to the substrate are formed on the substrate after pattern formation. According to the above structure, by performing the third gas replacement control, the first gas can be sprayed in a direction orthogonal to the substrate over a large range on the upper surface of the substrate. As a result, the processing liquid remaining inside the groove on the substrate is efficiently replaced by the first gas. Therefore, the processing liquid remaining inside the groove is smoothly removed, and the substrate is dried. During this drying, since the processing liquid removed from the substrate has a lower surface tension than the residual liquid, the pattern formed on the substrate is not easily damaged by the surface tension of the processing liquid. As a result, the residual liquid remaining on the substrate after pattern formation can be properly removed from the substrate.

[0159] Furthermore, during the second and third gas replacement controls, the second gas is injected from the second gas injection unit. In this case, at a position above the substrate, the flow of the second gas is formed in a manner of planar diffusion in a direction parallel to the upper surface of the substrate. Thus, particles scattered at a position above the second gas injection unit are suppressed from falling onto the substrate. Therefore, the cleanliness of the substrate after drying is suppressed from being reduced.

[0160] (Item 2) In the substrate processing apparatus described in Item 1, it may be that:

[0161] The substrate processing device further includes a processing cup, which is formed in a manner of surrounding the substrate held by the substrate holding portion in a plan view, and receives the processing liquid scattered from the substrate when the processing liquid is supplied to the substrate held by the substrate holding portion.

[0162] The upper position is a position above an upper end portion of the process cup when the process liquid is supplied to the substrate held by the substrate holding portion.

[0163] In this case, when the injection of the first gas is started based on the second gas replacement control, the distance between the nozzle device and the substrate can be ensured to be large. This further alleviates the impact caused by the collision of the first gas with the substrate and further reduces the scattering of the processing liquid.

[0164] (Item 3) In the substrate processing apparatus described in Item 2, it may be that:

[0165] The nozzle device further comprises a third gas injection portion,

[0166] The fluid supply system further supplies a third gas to the nozzle device.

[0167] The above-mentioned third gas injection part is located above the above-mentioned second gas injection part, and is formed so that when the above-mentioned nozzle device is in the above-mentioned one posture and is arranged in the space above the above-mentioned substrate held by the above-mentioned substrate holding part, the above-mentioned third gas supplied from the above-mentioned fluid supply system is radially injected toward the outer peripheral end of the above-mentioned substrate when viewed from above.

[0168] In this case, the flow of the third gas injected from the third gas injection unit blocks the gas flow between the space above the third gas injection unit and the space below the third gas injection unit. Thus, pollutants such as particles are prevented from falling onto the substrate from the space above the third gas injection unit. In addition, in the second gas replacement control and the third gas replacement control, the space below the third gas injection unit and above the substrate can be filled with the second gas. Therefore, by using an appropriate gas as the second gas, the space surrounding the substrate can be maintained as a clean and less reactive environment, that is, a chemically stable environment.

[0169] (Item 4) In the substrate processing apparatus described in Item 3, it may be that:

[0170] The nozzle device has a cylindrical outer peripheral surface extending in the vertical direction when in the above-mentioned one posture.

[0171] The second gas injection portion and the third gas injection portion each include an annular opening extending in a circumferential direction of the outer peripheral surface.

[0172] At least a portion of the opening of the second gas injection portion and the opening of the third gas injection portion is formed to face a space above an upper end portion of the process cup during the third gas replacement control.

[0173] In this case, the flow of the gas injected from at least a part of the opening of the second gas injection part and the opening of the third gas injection part blocks the gas flow between the space above the upper end of the process cup and the space below the upper end of the process cup. Thus, the space in the process cup is substantially sealed, thereby reducing the attachment of pollutants such as particles floating in the space surrounding the process cup to the substrate.

[0174] (Item 5) In the substrate processing apparatus described in any one of Items 1 to 4, it may be that:

[0175] The above-mentioned liquid replacement control includes:

[0176] a first liquid replacement control for controlling the relative movement device so that, in a state where the residual liquid exists on the substrate held by the substrate holding portion, the nozzle device is located at the upper position and the liquid ejection portion is opposite to the center of the substrate; and

[0177] The second liquid replacement control controls the fluid supply system and the relative moving device after the first liquid replacement control so that the processing liquid is ejected from the liquid ejection portion and the nozzle device in the upper position moves from the center of the substrate toward the peripheral end.

[0178] In this case, the processing liquid can be ejected from the center to the peripheral portion of the rotating substrate in a direction perpendicular to the substrate. In addition, the processing liquid is ejected from the upper position and collides with the surface of the substrate with high energy compared to the case of ejecting from the lower position. As a result, the residual liquid remaining on the substrate is efficiently replaced by the processing liquid. As a result, the residual liquid remaining on the substrate can be removed from the substrate more appropriately.

[0179] (Item 6) In the substrate processing apparatus described in any one of Items 1 to 5, it may be that:

[0180] The fluid supply system includes a temperature adjustment unit that adjusts the temperature of the processing liquid supplied to the nozzle device to a temperature higher than a normal temperature.

[0181] In this case, during the liquid replacement control, the residual liquid remaining on the substrate is replaced by the processing liquid having a temperature higher than normal temperature.

[0182] (Item 7) The substrate processing device of Item 7 is a substrate processing device for removing residual liquid remaining on a substrate after pattern formation from the substrate, and comprises:

[0183] A substrate holding portion that holds the substrate and rotates the substrate around an axis in a vertical direction;

[0184] A nozzle device having a liquid ejection portion, a first gas ejection portion, and a second gas ejection portion;

[0185] a fluid supply system for supplying a treatment liquid having a lower surface tension than the residual liquid, a first gas, and a second gas to the nozzle device;

[0186] a relative moving device that moves the nozzle device in one posture relative to the substrate between an upper position that is a predetermined distance above the substrate held by the substrate holding portion and a lower position that is lower than the upper position and higher than the substrate, and moves the nozzle device in the one posture relative to the substrate in a horizontal direction; and

[0187] Control Department,

[0188] The liquid ejection portion is formed so as to eject the processing liquid supplied from the fluid supply system downward when the nozzle device is in the one posture.

[0189] The first gas injection portion is formed so as to inject the first gas supplied from the fluid supply system downward when the nozzle device is in the one posture.

[0190] The second gas injection portion is formed so as to radially inject the second gas supplied from the fluid supply system toward the outer peripheral end of the substrate in a plan view when the nozzle device is in the one posture and arranged in the space above the substrate held by the substrate holding portion.

[0191] Regarding the above control unit,

[0192] controlling the substrate holding portion so as to rotate the substrate held by the substrate holding portion,

[0193] performing a first liquid replacement control for controlling the relative moving device so that, in a state where the residual liquid exists on the substrate held by the substrate holding portion, the nozzle device is located at the upper position and the liquid ejection portion is opposite to the center of the substrate,

[0194] After the first liquid replacement control, a second liquid replacement control is performed to control the fluid supply system and the relative moving device, so that the processing liquid is ejected from the liquid ejection portion and the nozzle device in the upper position moves from the center of the substrate toward the outer peripheral end.

[0195] After the second liquid replacement control, a gas replacement control is performed on the fluid supply system and the relative moving device, so that when the processing liquid is present on the substrate held by the substrate holding portion, the second gas is sprayed from the second gas injection portion of the nozzle device, and the first gas is sprayed onto the substrate from the first gas injection portion of the nozzle device.

[0196] In substrate processing in which a processing liquid is supplied to a rotating substrate, a processing cup is used to receive the processing liquid scattered from the substrate. When the processing cup is used, the processing cup is held at a height position that is approximately the same as the height position of the substrate in a state close to the outer peripheral end of the substrate. Therefore, if the nozzle device is in a position close to the substrate, the processing cup and the nozzle device may interfere with each other.

[0197] In the substrate processing device, the nozzle device is configured to the upper position by the first liquid replacement control, and the liquid ejection part is opposite to the center of the substrate. Then, the processing liquid is ejected from the liquid ejection part to the substrate by the second liquid replacement control. In addition, the nozzle device moves from the center of the substrate toward the outer peripheral end of the substrate. In this case, compared with the case where the nozzle device is in the lower position, the nozzle device is maintained at a height position away from the substrate. Therefore, when the nozzle device moves from the center of the substrate toward the outer peripheral end, it is difficult for the nozzle device and the processing cup to interfere with each other.

[0198] In addition, a plurality of grooves having depth in a direction orthogonal to the upper surface of the substrate are formed on the substrate after pattern formation. According to the above structure, by performing the second liquid replacement control, the processing liquid can be ejected in a direction orthogonal to the substrate within a large range on the upper surface of the substrate. At this time, the processing liquid collides with the surface of the substrate with high energy compared with the case of ejecting from the lower position by being ejected from the upper position. Therefore, the residual liquid remaining inside the groove on the substrate is efficiently replaced by the processing liquid. Therefore, the residual liquid remaining inside the groove is smoothly removed.

[0199] After the second liquid replacement control, the processing liquid on the substrate is replaced with the first gas by the gas replacement control, and the substrate is dried. During the drying, since the processing liquid removed from the substrate has a lower surface tension than the residual liquid, the pattern formed on the substrate is less likely to be damaged by the surface tension of the processing liquid. As a result, the residual liquid remaining on the substrate after the pattern is formed can be properly removed from the substrate.

[0200] Furthermore, during the gas replacement control, the second gas is injected from the second gas injection unit. In this case, at a position above the substrate, the flow of the second gas is formed in a manner of planar diffusion in a direction parallel to the upper surface of the substrate. Thus, particles scattered at a position above the second gas injection unit are suppressed from falling onto the substrate. Therefore, the cleanliness of the substrate after drying is suppressed from being reduced.

[0201] (Item 8) In the substrate processing apparatus described in Item 7, it may be that:

[0202] The substrate processing device further includes a processing cup, which is formed in a manner of surrounding the substrate held by the substrate holding portion in a plan view, and receives the processing liquid scattered from the substrate when the processing liquid is supplied to the substrate held by the substrate holding portion.

[0203] The upper position is a position above an upper end portion of the process cup when the process liquid is supplied to the substrate held by the substrate holding portion.

[0204] In this case, when the treatment liquid is ejected based on the second liquid replacement control, the distance between the nozzle device and the substrate can be ensured to be large. Thus, the treatment liquid ejected from the liquid ejection portion can collide with the surface of the substrate with high energy. Therefore, the residual liquid remaining in the groove is smoothly removed.

[0205] (Item 9) In the substrate processing apparatus described in Item 8, it may be that:

[0206] The nozzle device further comprises a third gas injection portion,

[0207] The fluid supply system further supplies a third gas to the nozzle device.

[0208] The above-mentioned third gas injection part is located above the above-mentioned second gas injection part, and is formed so that when the above-mentioned nozzle device is in the above-mentioned one posture and is arranged in the space above the above-mentioned substrate held by the above-mentioned substrate holding part, the above-mentioned third gas supplied from the above-mentioned fluid supply system is radially injected toward the outer peripheral end of the above-mentioned substrate when viewed from above.

[0209] In this case, the flow of the third gas injected from the third gas injection unit blocks the gas flow between the space above the third gas injection unit and the space below the third gas injection unit. Thus, pollutants such as particles are prevented from falling onto the substrate from the space above the third gas injection unit. In addition, in the second gas replacement control and the third gas replacement control, the space below the third gas injection unit and above the substrate can be filled with the second gas. Therefore, by using an appropriate gas as the second gas, the space surrounding the substrate can be maintained as a clean and less reactive environment, that is, a chemically stable environment.

[0210] (Item 10) In the substrate processing apparatus described in Item 9, it may be that:

[0211] The nozzle device has a cylindrical outer peripheral surface extending in the vertical direction when in the above-mentioned one posture.

[0212] The second gas injection portion and the third gas injection portion each include an annular opening extending in a circumferential direction of the outer peripheral surface.

[0213] At least a portion of the opening of the second gas injection portion and the opening of the third gas injection portion is formed to face a space above an upper end portion of the process cup during the gas replacement control.

[0214] In this case, the flow of the gas injected from at least a part of the opening of the second gas injection part and the opening of the third gas injection part blocks the gas flow between the space above the upper end of the process cup and the space below the upper end of the process cup. Thus, the space in the process cup is substantially sealed, thereby reducing the attachment of pollutants such as particles floating in the space surrounding the process cup to the substrate.

[0215] (Item 11) The substrate processing method described in Item 11 is a substrate processing method for removing residual liquid remaining on the substrate after pattern formation from the substrate using a nozzle device,

[0216] The nozzle device comprises a liquid ejection portion, a first gas ejection portion and a second gas ejection portion.

[0217] The liquid ejection portion is formed to eject the processing liquid supplied to the nozzle device downward when the nozzle device is in a certain posture.

[0218] The first gas injection portion is formed so as to inject the first gas supplied to the nozzle device downward when the nozzle device is in the one posture.

[0219] The second gas injection unit is configured to inject the second gas supplied to the nozzle device radially toward the outer peripheral end of the substrate in a plan view when the nozzle device is in the one posture and arranged in the space above the substrate held by the substrate holding unit.

[0220] The treatment liquid has a lower surface tension than the residual liquid.

[0221] The substrate processing method comprises the following steps:

[0222] The step of holding the substrate by the substrate holding portion and rotating the held substrate around an axis in the vertical direction;

[0223] a liquid replacement step of disposing the nozzle device above the substrate and supplying the processing liquid to the nozzle device so that the processing liquid is ejected from the liquid ejection portion onto the substrate while the residual liquid is present on the substrate held by the substrate holding portion;

[0224] a first gas replacement step, after the liquid replacement step, in a state where the processing liquid is present on the substrate, disposing the nozzle device to an upper position above the substrate at a predetermined distance in such a manner that the first gas injection portion is opposite to the center of the substrate;

[0225] a second gas replacement step of supplying the first gas and the second gas to the nozzle device so that the first gas and the second gas are respectively ejected from the first gas ejection part and the second gas ejection part, and simultaneously lowering the nozzle device to a lower position below the upper position and above the substrate after the first gas replacement step; and

[0226] The third gas replacement step is to supply the first gas and the second gas to the nozzle device after the second gas replacement step so that the first gas and the second gas are respectively ejected from the first gas injection part and the second gas injection part, and at the same time, the nozzle device in the lower position is moved from the center of the substrate toward the outer peripheral end.

[0227] In the substrate processing method, the residual liquid on the substrate is replaced with the processing liquid through the liquid replacement step. Then, through the first gas replacement step, the nozzle device is arranged in the upper position, and the first gas injection part is opposite to the center of the substrate. In this state, through the second gas replacement step, the gas is injected downward from the first gas injection part of the nozzle device. While maintaining the state of injecting gas downward from the first gas injection part, the nozzle device is lowered from the upper position to the lower position. At this time, the impact degree generated when the first gas injected from the first gas injection part collides with the substrate increases smoothly as the nozzle device moves from the upper position to the lower position. Therefore, compared with the case where the injection of the first gas is started when the nozzle device is in the lower position, the change in the impact applied to the processing liquid on the substrate is moderate. Therefore, the scattering of the processing liquid caused by the collision of the first gas with the substrate is reduced. As a result, the reduction in the cleanliness of the substrate caused by the processing liquid scattered from the substrate adhering to the substrate again is suppressed.

[0228] A plurality of grooves having a depth in a direction orthogonal to the substrate are formed on the substrate after pattern formation. According to the above method, by performing the third gas replacement step, the first gas can be sprayed in a large range on the upper surface of the substrate in a direction orthogonal to the substrate. As a result, the processing liquid remaining inside the groove on the substrate is efficiently replaced by the first gas. Therefore, the processing liquid remaining inside the groove is smoothly removed and the substrate is dried. During the drying, since the processing liquid removed from the substrate has a lower surface tension than the residual liquid, the pattern formed on the substrate is not easily damaged by the surface tension of the processing liquid. As a result, the residual liquid remaining on the substrate after pattern formation can be properly removed from the substrate.

[0229] Furthermore, in the second and third gas replacement steps, the second gas is injected from the second gas injection unit. In this case, at a position above the substrate, the flow of the second gas is formed in a manner of planar diffusion in a direction parallel to the upper surface of the substrate. Thus, particles scattered at a position above the second gas injection unit are suppressed from falling onto the substrate. Therefore, the cleanliness of the substrate after drying is suppressed from being reduced.

[0230] (Item 12) The substrate processing method described in Item 12 is a substrate processing method for removing residual liquid remaining on the substrate after pattern formation from the substrate using a nozzle device,

[0231] The nozzle device comprises a liquid ejection portion, a first gas ejection portion and a second gas ejection portion.

[0232] The liquid ejection portion is formed so as to eject the processing liquid supplied to the nozzle device downward when the nozzle device is in a certain posture.

[0233] The first gas injection portion is formed so as to inject the first gas supplied to the nozzle device downward when the nozzle device is in the one posture.

[0234] The second gas injection unit is configured to inject the second gas supplied to the nozzle device radially toward the outer peripheral end of the substrate in a plan view when the nozzle device is in the one posture and arranged in the space above the substrate held by the substrate holding unit.

[0235] The treatment liquid has a lower surface tension than the residual liquid.

[0236] The substrate processing method comprises the following steps:

[0237] The step of holding the substrate by the substrate holding portion and rotating the held substrate around an axis in the vertical direction;

[0238] a first liquid replacement step, in which the nozzle device in the one posture is arranged at an upper position above the substrate at a predetermined distance in such a manner that the liquid ejection portion is opposite to the center of the substrate, while the residual liquid is present on the substrate held by the substrate holding portion;

[0239] a second liquid replacement step of supplying the processing liquid to the nozzle device so that the processing liquid is ejected from the liquid ejection portion after the first liquid replacement step, while moving the nozzle device in the upper position from the center of the substrate toward the outer peripheral end; and

[0240] A gas replacement step, after the second liquid replacement step, in a state where the processing liquid exists on the substrate, the second gas is sprayed from the second gas injection portion by arranging the nozzle device above the substrate and supplying the second gas to the nozzle device, and at the same time, the first gas is sprayed onto the substrate from the first gas injection portion by supplying the first gas to the nozzle device.

[0241] In substrate processing in which a processing liquid is supplied to a rotating substrate, a processing cup is used to receive the processing liquid scattered from the substrate. When the processing cup is used, the processing cup is held at a height position that is approximately the same as the height position of the substrate in a state close to the outer peripheral end of the substrate. Therefore, if the nozzle device is in a position close to the substrate, the processing cup and the nozzle device may interfere with each other.

[0242] In the substrate processing method, the nozzle device is arranged in an upper position through a first liquid replacement step, and the liquid ejection part is opposite to the center of the substrate. Then, through a second liquid replacement step, the processing liquid is ejected from the liquid ejection part to the substrate. In addition, the nozzle device moves from the center of the substrate toward the outer peripheral end of the substrate. In this case, compared with the case where the nozzle device is at a position lower than the upper position, the nozzle device is maintained at a height position away from the substrate. Therefore, when the nozzle device moves from the center of the substrate toward the outer peripheral end, it is difficult for the nozzle device and the processing cup to interfere with each other.

[0243] In addition, a plurality of grooves having a depth in a direction orthogonal to the upper surface of the substrate are formed on the substrate after pattern formation. According to the above structure, by performing the second liquid replacement step, the processing liquid can be ejected in a direction orthogonal to the substrate over a large range on the upper surface of the substrate. At this time, the processing liquid collides with the surface of the substrate with high energy compared to the case of ejecting from a position lower than the upper position by being ejected from the upper position. Therefore, the residual liquid remaining in the interior of the groove on the substrate is efficiently replaced by the processing liquid. Therefore, the residual liquid remaining in the interior of the groove is smoothly removed.

[0244] After the second liquid replacement step, the processing liquid on the substrate is replaced with the first gas in the gas replacement step, and the substrate is dried. During the drying, since the processing liquid removed from the substrate has a lower surface tension than the residual liquid, the pattern formed on the substrate is less likely to be damaged by the surface tension of the processing liquid. As a result, the residual liquid remaining on the substrate after the pattern is formed can be properly removed from the substrate.

[0245] Furthermore, during the gas replacement step, the second gas is injected from the second gas injection unit. In this case, at a position above the substrate, the flow of the second gas is formed in a manner of planar diffusion in a direction parallel to the upper surface of the substrate. Thus, particles scattered at a position above the second gas injection unit are suppressed from falling onto the substrate. Therefore, the cleanliness of the substrate after drying is suppressed from being reduced.

[0246] According to the substrate processing device and substrate processing method of the above-mentioned embodiment, residual liquid can be efficiently removed when the substrate is dried. Therefore, since unnecessary consumption of the processing liquid can be suppressed, it is not necessary to prepare a large amount of processing liquid. Therefore, it can help reduce the pollution of the earth's environment caused by the processing liquid.

Claims

1. A substrate processing device for removing residual liquid remaining on a substrate after pattern formation from the substrate, the substrate processing device being characterized by comprising: a substrate holding portion that holds the substrate and rotates the substrate around an axis in the vertical direction; A nozzle device having a liquid ejection portion, a first gas ejection portion, and a second gas ejection portion; a fluid supply system for supplying a treatment liquid having a lower surface tension than the residual liquid, a first gas, and a second gas to the nozzle device; a relative moving device that moves the nozzle device in one posture relative to the substrate between an upper position that is a predetermined distance above the substrate held by the substrate holding portion and a lower position that is lower than the upper position and higher than the substrate, and moves the nozzle device in the one posture relative to the substrate in a horizontal direction; and Control Department, The liquid ejection portion is formed so as to eject the processing liquid supplied from the fluid supply system downward when the nozzle device is in the one posture. The first gas injection portion is configured to inject the first gas supplied from the fluid supply system downward when the nozzle device is in the first posture. The second gas injection unit is configured to inject the second gas supplied from the fluid supply system radially toward the outer peripheral end of the substrate in a plan view when the nozzle device is in the first posture and arranged in the space above the substrate held by the substrate holding unit. Regarding the control unit, controlling the substrate holding portion so as to rotate the substrate held by the substrate holding portion, performing liquid replacement control for controlling the fluid supply system and the relative moving device so that the processing liquid is ejected onto the substrate from the liquid ejection portion of the nozzle device in a state where the residual liquid exists on the substrate held by the substrate holding portion, After the liquid replacement control, a first gas replacement control is performed to control the relative moving device so that, in a state where the processing liquid is present on the substrate, the nozzle device is located at the upper position and the first gas injection portion is opposite to the center of the substrate. After the first gas replacement control, a second gas replacement control is performed to control the fluid supply system and the relative moving device, so that the first gas and the second gas are respectively injected from the first gas injection part and the second gas injection part, and at the same time, the nozzle device is lowered from the upper position to the lower position, After the second gas replacement control, the third gas replacement control is performed to control the fluid supply system and the relative moving device, so that the first gas and the second gas are respectively ejected from the first gas injection part and the second gas injection part, and at the same time, the nozzle device in the lower position moves from the center of the substrate toward the outer peripheral end.

2. The substrate processing apparatus according to claim 1, wherein: A processing cup is further provided, the processing cup being formed so as to surround the substrate held by the substrate holding portion in a plan view, and receiving the processing liquid scattered from the substrate when the processing liquid is supplied to the substrate held by the substrate holding portion, The upper position is a position above an upper end portion of the process cup when the process liquid is supplied to the substrate held by the substrate holding portion.

3. The substrate processing apparatus according to claim 2, wherein: The nozzle device further comprises a third gas injection portion, The fluid supply system further supplies a third gas to the nozzle device. The third gas injection portion is located above the second gas injection portion, and is formed so that when the nozzle device is in the one posture and is arranged in the space above the substrate held by the substrate holding portion, the third gas supplied from the fluid supply system is radially injected toward the outer peripheral end of the substrate when viewed from above.

4. The substrate processing apparatus according to claim 3, wherein: The nozzle device has a cylindrical outer peripheral surface extending in the vertical direction when in the one posture. The second gas injection portion and the third gas injection portion each include an annular opening extending in a circumferential direction of the outer peripheral surface. At least a portion of the opening of the second gas injection portion and the opening of the third gas injection portion is formed to face a space above an upper end portion of the process cup during the third gas replacement control.

5. The substrate processing apparatus according to any one of claims 1 to 4, characterized in that: The liquid replacement control comprises: a first liquid replacement control for controlling the relative movement device so that, in a state where the residual liquid exists on the substrate held by the substrate holding portion, the nozzle device is located at the upper position and the liquid ejection portion is opposite to the center of the substrate; and The second liquid replacement control controls the fluid supply system and the relative movement device after the first liquid replacement control so that the processing liquid is ejected from the liquid ejection portion and the nozzle device in the upper position moves from the center of the substrate toward the peripheral end.

6. The substrate processing apparatus according to any one of claims 1 to 5, wherein: The fluid supply system includes a temperature adjustment unit that adjusts the temperature of the processing liquid supplied to the nozzle device to a temperature higher than a normal temperature.

7. A substrate processing device for removing residual liquid remaining on a substrate after pattern formation from the substrate, the substrate processing device being characterized by comprising: a substrate holding portion that holds the substrate and rotates the substrate around an axis in the vertical direction; A nozzle device having a liquid ejection portion, a first gas ejection portion, and a second gas ejection portion; a fluid supply system for supplying a treatment liquid having a lower surface tension than the residual liquid, a first gas, and a second gas to the nozzle device; a relative moving device that moves the nozzle device in one posture relative to the substrate between an upper position that is a predetermined distance above the substrate held by the substrate holding portion and a lower position that is lower than the upper position and higher than the substrate, and moves the nozzle device in the one posture relative to the substrate in a horizontal direction; and Control Department, The liquid ejection portion is formed so as to eject the processing liquid supplied from the fluid supply system downward when the nozzle device is in the one posture. The first gas injection portion is configured to inject the first gas supplied from the fluid supply system downward when the nozzle device is in the first posture. The second gas injection unit is configured to inject the second gas supplied from the fluid supply system radially toward the outer peripheral end of the substrate in a plan view when the nozzle device is in the first posture and arranged in the space above the substrate held by the substrate holding unit. Regarding the control unit, controlling the substrate holding portion so as to rotate the substrate held by the substrate holding portion, performing a first liquid replacement control for controlling the relative moving device so that, in a state where the residual liquid exists on the substrate held by the substrate holding portion, the nozzle device is located at the upper position and the liquid ejection portion is opposite to the center of the substrate, After the first liquid replacement control, a second liquid replacement control is performed to control the fluid supply system and the relative movement device, so that the processing liquid is ejected from the liquid ejection portion and the nozzle device in the upper position moves from the center of the substrate toward the outer peripheral end. After the second liquid replacement control, gas replacement control is performed to control the fluid supply system and the relative moving device, so that when the processing liquid is present on the substrate held by the substrate holding part, the second gas is ejected from the second gas injection part of the nozzle device, and the first gas is ejected onto the substrate from the first gas injection part of the nozzle device.

8. The substrate processing apparatus according to claim 7, wherein: A processing cup is further provided, the processing cup being formed so as to surround the substrate held by the substrate holding portion in a plan view, and receiving the processing liquid scattered from the substrate when the processing liquid is supplied to the substrate held by the substrate holding portion, The upper position is a position above an upper end portion of the process cup when the process liquid is supplied to the substrate held by the substrate holding portion.

9. The substrate processing apparatus according to claim 8, wherein: The nozzle device further comprises a third gas injection portion, The fluid supply system further supplies a third gas to the nozzle device. The third gas injection portion is located above the second gas injection portion, and is formed so that when the nozzle device is in the one posture and is arranged in the space above the substrate held by the substrate holding portion, the third gas supplied from the fluid supply system is radially injected toward the outer peripheral end of the substrate when viewed from above.

10. The substrate processing apparatus according to claim 9, wherein: The nozzle device has a cylindrical outer peripheral surface extending in the vertical direction when in the one posture. The second gas injection portion and the third gas injection portion each include an annular opening extending in a circumferential direction of the outer peripheral surface. At least a portion of the opening of the second gas injection portion and the opening of the third gas injection portion is formed to face a space above an upper end portion of the process cup during the gas replacement control.

11. A substrate processing method, using a nozzle device to remove residual liquid remaining on a substrate after pattern formation from the substrate, wherein the substrate processing method is characterized in that: The nozzle device comprises a liquid ejection portion, a first gas ejection portion and a second gas ejection portion, The liquid ejection portion is formed so as to eject the processing liquid supplied to the nozzle device downward when the nozzle device is in a certain posture. The first gas injection portion is configured to inject the first gas supplied to the nozzle device downward when the nozzle device is in the first posture. The second gas injection unit is configured to inject the second gas supplied to the nozzle device radially toward the outer peripheral end of the substrate in a plan view when the nozzle device is in the first posture and arranged in the space above the substrate held by the substrate holding unit. The treatment liquid has a lower surface tension than the residual liquid, The substrate processing method comprises the following steps: A step of holding the substrate by the substrate holding portion and rotating the held substrate around an axis in a vertical direction; a liquid replacement step of disposing the nozzle device above the substrate and supplying the processing liquid to the nozzle device while the residual liquid is present on the substrate held by the substrate holding portion so that the processing liquid is ejected from the liquid ejection portion onto the substrate; a first gas replacement step of, after the liquid replacement step, disposing the nozzle device to an upper position above the substrate at a predetermined distance in a state where the processing liquid is present on the substrate so that the first gas injection portion is opposed to the center of the substrate; a second gas replacement step of supplying the first gas and the second gas to the nozzle device so that the first gas and the second gas are respectively ejected from the first gas ejection part and the second gas ejection part, and simultaneously lowering the nozzle device to a lower position below the upper position and above the substrate after the first gas replacement step; and The third gas replacement step is to supply the first gas and the second gas to the nozzle device after the second gas replacement step, thereby spraying the first gas and the second gas from the first gas injection part and the second gas injection part respectively, and at the same time, move the nozzle device in the lower position from the center of the substrate toward the outer peripheral end.

12. A substrate processing method, using a nozzle device to remove residual liquid remaining on a substrate after pattern formation from the substrate, wherein the substrate processing method is characterized in that: The nozzle device comprises a liquid ejection portion, a first gas ejection portion and a second gas ejection portion, The liquid ejection portion is formed so as to eject the processing liquid supplied to the nozzle device downward when the nozzle device is in a certain posture. The first gas injection portion is configured to inject the first gas supplied to the nozzle device downward when the nozzle device is in the first posture. The second gas injection unit is configured to inject the second gas supplied to the nozzle device radially toward the outer peripheral end of the substrate in a plan view when the nozzle device is in the first posture and arranged in the space above the substrate held by the substrate holding unit. The treatment liquid has a lower surface tension than the residual liquid, The substrate processing method comprises the following steps: A step of holding the substrate by the substrate holding portion and rotating the held substrate around an axis in a vertical direction; a first liquid replacement step of disposing the nozzle device in the one posture to an upper position above the substrate at a predetermined distance in a state where the residual liquid exists on the substrate held by the substrate holding portion so that the liquid ejection portion is opposite to the center of the substrate; a second liquid replacement step of supplying the processing liquid to the nozzle device so that the processing liquid is ejected from the liquid ejection portion after the first liquid replacement step, while moving the nozzle device in the upper position from the center of the substrate toward the outer peripheral end; and A gas replacement step, after the second liquid replacement step, in a state where the processing liquid exists on the substrate, the second gas is sprayed from the second gas injection portion by arranging the nozzle device above the substrate and supplying the second gas to the nozzle device, and at the same time, the first gas is sprayed onto the substrate from the first gas injection portion by supplying the first gas to the nozzle device.

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