Electron transport composition, light-emitting element, and method for manufacturing light-emitting element

Abstract

The present disclosure relates to an electron transport composition, a method for manufacturing a light-emitting element, and a light-emitting element. The electron transport composition includes: inorganic particles (each) represented by Formula 1; and a solvent represented by Formula 2, and when the electron transport composition is applied to a light-emitting element, luminous efficiency characteristics and element lifetime characteristics can be improved. Formula 1: Zn1-xMxO Formula 2: R1-O-(R2-O) n-R3 Ra [mu] m.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0103741 filed in the Korean Intellectual Property Office on August 8, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Various embodiments of the present disclosure described herein relate to an electron transport composition, a light emitting element manufactured using the electron transport composition, and a method for manufacturing a light emitting element. Background Art

[0004] Various types of display devices are being developed for multimedia devices such as televisions, mobile phones, tablet computers, navigation systems, and game consoles. In such display devices, so-called self-luminous display elements are used that realize display by emitting light from a luminescent material containing an organic compound.

[0005] In some embodiments, in order to improve the color reproducibility of display devices, development of light-emitting elements using quantum dots as light-emitting materials has been underway or is being promoted, and it is necessary or desirable to improve the luminous efficiency and / or lifetime of light-emitting elements using such quantum dots. Summary of the invention

[0006] Aspects according to one or more embodiments of the present disclosure are directed to an electron transport composition that may include zinc tin oxide and a light emitting element including an electron transport region formed of the electron transport composition to thereby have improved luminous efficiency and / or lifetime.

[0007] Aspects according to one or more embodiments of the present disclosure are directed to a method for manufacturing a light emitting element, the method including forming an electron transport region by which solution processability is improved.

[0008] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0009] According to one or more embodiments, the electron transport composition may include inorganic particles represented by Formula 1 and a solvent represented by Formula 2 (each).

[0010] Formula 1

[0011] Zn 1-x M x O

[0012] In the above formula 1, M is Sn, Cu or Ni, and x satisfies 0<x<1.

[0013] Formula 2

[0014] R 1 -O-(R 2 -O) n -R 3

[0015] Wherein, in the above formula 2, R 1 is a hydrogen atom or a deuterium atom, R 2 is a substituted or unsubstituted alkylene group having 1 to 60 carbon atoms, a substituted or unsubstituted cycloalkylene group having 3 to 10 ring carbon atoms, a substituted or unsubstituted heterocycloalkylene group having 2 to 10 ring carbon atoms, a substituted or unsubstituted arylene group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroarylene group having 2 to 30 ring carbon atoms, R 3 is a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 ring carbon atoms, a substituted or unsubstituted heterocycloalkyl group having 2 to 10 ring carbon atoms, a substituted or unsubstituted silyl group, a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 ring carbon atoms, and n is an integer from 1 to 5.

[0016] In an embodiment, M may be Sn.

[0017] In an embodiment, x may satisfy 0<x<0.2.

[0018] In an embodiment, the solvent represented by Formula 2 may be represented by any one selected from Formula 3-1 to Formula 3-3.

[0019] Formula 3-1

[0020]

[0021] Formula 3-2

[0022]

[0023] Formula 3-3

[0024]

[0025] Wherein, in Formula 3-1 to Formula 3-3, the same description as in Formula 2 above can be applied to R 1 , R 3 and n.

[0026] In an embodiment, the boiling point of the solvent may be about 200° C. or higher.

[0027] In an embodiment, the solvent may have a viscosity of about 30 centipoise (cP or cp) or less and a surface tension of about 40 dynes per centimeter (40 dyn / cm) or less.

[0028] In an embodiment, the solvent may have a viscosity of about 20 cp or less, and the solvent may have a surface tension of about 34 dyn / cm or less.

[0029] In an embodiment, the solvent represented by Formula 2 may be represented by any one selected from Formula 4-1 to Formula 4-8.

[0030] Formula 4-1

[0031]

[0032] Formula 4-2

[0033]

[0034] Formula 4-3

[0035]

[0036] Formula 4-4

[0037]

[0038] Formula 4-5

[0039]

[0040] Formula 4-6

[0041]

[0042] Formula 4-7

[0043]

[0044] Formula 4-8

[0045]

[0046] In an embodiment, an additive represented by Formula 5 may further be included.

[0047] Formula 5

[0048]

[0049] In the above formula 5, R 11 To R 13may be each independently a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 ring carbon atoms, a substituted or unsubstituted silyl group, a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 ring carbon atoms, R 14 may be a substituted or unsubstituted alkylene group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkylene group having 3 to 20 ring carbon atoms, a substituted or unsubstituted arylene group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroarylene group having 2 to 30 ring carbon atoms, a1 to a3 may each independently be 0 or 1, at least one selected from a1 to a3 may be 1, and F 1 It may be a substituted or unsubstituted acrylate group or methacrylate group, a substituted or unsubstituted epoxy group, or a substituted or unsubstituted amine group.

[0050] In an embodiment, the additive represented by Formula 5 above may be represented by any one selected from Formula 6-1 to Formula 6-5.

[0051] Formula 6-1

[0052]

[0053] Formula 6-2

[0054]

[0055] Formula 6-3

[0056]

[0057] Formula 6-4

[0058]

[0059] Formula 6-5

[0060]

[0061] In an embodiment of the present disclosure, a method for manufacturing a light-emitting element according to an embodiment of the present disclosure includes: forming (or applying) a hole transport region on a first electrode; forming an emission layer on the hole transport region; forming an electron transport region on the emission layer; and forming a second electrode on the electron transport region, wherein the formation of the electron transport region includes: preparing an electron transport composition comprising inorganic particles and a solvent; forming a preliminary electron transport region by applying the electron transport composition to the emission layer; and performing a heat treatment on the preliminary electron transport region at a first temperature, the inorganic particles are represented by Formula 1, and the solvent is represented by Formula 2.

[0062] In an embodiment, the first temperature may be about 50°C to about 150°C.

[0063] In an embodiment, the electron transport composition may include about 0.1 wt % to about 5.0 wt % of inorganic particles relative to 100 wt % of the solvent.

[0064] In an embodiment of the present disclosure, a light-emitting element includes: a first electrode; a hole transport region disposed on the first electrode; an emission layer disposed on the hole transport region; an electron transport region disposed on the emission layer; and a second electrode disposed on the electron transport region, wherein the electron transport region includes (each) inorganic particles represented by Formula 1.

[0065] Formula 1

[0066] Zn 1-x M x O

[0067] Wherein, in the above formula 1, M is Sn, Cu or Ni, and x satisfies 0<x<0.2. In an embodiment, the emission layer may include quantum dots.

[0068] In an embodiment, the quantum dot may include a core and a shell around (eg, surrounding) the core. BRIEF DESCRIPTION OF THE DRAWINGS

[0069] The accompanying drawings are included to provide a further understanding of the present disclosure and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. In the drawings:

[0070] Figure 1 is a perspective view of an electronic device according to an embodiment of the present disclosure;

[0071] Figure 2 is an exploded perspective view of an electronic device according to an embodiment of the present disclosure;

[0072] Figure 3 It is along Figure 1 A cross-sectional view of a display device according to an embodiment of the present disclosure taken along line II';

[0073] Figure 4 is a plan view showing a display device according to an embodiment of the present disclosure;

[0074] Figure 5 is a cross-sectional view of a display device according to an embodiment of the present disclosure;

[0075] Figures 6 to 9is a cross-sectional view of a light emitting element according to an embodiment of the present disclosure;

[0076] Fig.10 is a flowchart showing a method for manufacturing a light emitting element according to an embodiment;

[0077] Fig.11 is a flow chart breaking down operations for forming an electron transport region according to an embodiment;

[0078] Fig.12 is a view schematically showing an electron transport composition according to an embodiment; and

[0079] Fig.13 and Fig.14 2 is a view schematically illustrating some operations for manufacturing a light emitting element according to an embodiment. DETAILED DESCRIPTION

[0080] In the present disclosure, one or more suitable modifications may be made, and one or more suitable forms may be applied, and specific embodiments will be shown in the drawings and described in more detail in the text. However, this is not intended to limit the present disclosure to a specific disclosed form, and the present disclosure should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present disclosure.

[0081] In this specification, when a component (or region, layer, part, etc.) is referred to as being "on" another component, "connected to" another component, or "coupled to" another component, it means that the one component (or region, layer, part, etc.) is directly placed on / directly connected / directly coupled to the other component, or a third component may be set between the one component and the other component.

[0082] In contrast, as used herein, when an element is referred to as being "directly disposed," there are no intervening layers, films, regions, or panels between a component such as a layer, film, region, or panel and another component. For example, "directly disposed on" may refer to directly disposing two layers or two components without using an additional intervening component, such as an adhesive component.

[0083] The same reference numerals or symbols refer to the same elements. In some embodiments, in the drawings, the thickness, proportion and size of the components are exaggerated to effectively describe the technical content (e.g., quantity). "And / or" includes all combinations of one or more that the associated elements (elements) can define.

[0084] Terms such as first and second may be used to describe one or more suitable components, but these components should not be limited by these terms. These terms are only used for the purpose of distinguishing one component from other components. For example, without departing from the scope of the present disclosure, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component. Unless the context clearly indicates otherwise, singular expressions include plural expressions.

[0085] In some embodiments, terms such as "below", "lower", "above", and "upper" are used to describe the relationship between components shown in the drawings. These terms are relative concepts and are described based on the directions indicated in the drawings.

[0086] Unless otherwise defined, all terms (including technical terms and scientific terms) used in this specification have the same meaning as those commonly understood by ordinary technicians in the field to which the present disclosure belongs. In some embodiments, unless explicitly defined herein, terms (such as terms defined in general dictionaries) should be interpreted as having a meaning consistent with the meaning in the context of the associated technology, and should not be interpreted as being too idealized or too formal.

[0087] Terms such as “including” or “having” are intended to specify the presence of the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and it should be understood that this does not exclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0088] Hereinafter, an electron transport composition according to an embodiment of the present disclosure, a light emitting element using the electron transport composition, and a method for manufacturing the light emitting element will be described in more detail with reference to the accompanying drawings.

[0089] Figure 1 is a perspective view of an electronic device EA according to an embodiment of the present disclosure. Figure 2 is an exploded perspective view of an electronic device EA according to an embodiment of the present disclosure. Figure 3 It is along Figure 1 0 is a cross-sectional view of a display device DD according to an embodiment of the present disclosure, taken along line II′ in FIG.

[0090] In an embodiment, the electronic device EA may be a large electronic device such as a television, a monitor, or an outdoor billboard. In some embodiments, the electronic device EA may be a medium or small electronic device such as a personal computer (e.g., a laptop computer, a tablet computer), a personal digital device, a car navigation unit, a game console, a smart phone, and a camera. In some embodiments, these devices are only presented as examples, but other devices may also be used as long as they are within the scope of the present disclosure. In the present embodiment, as an example, a smart phone is shown as the electronic device EA.

[0091] The electronic device EA may include a display device DD and a housing HAU. The display device DD may display an image IM via a display surface IS. Figure 1 , the display surface IS is shown to be parallel to a surface defined by a first direction DR1 and a second direction DR2 crossing the first direction DR1. However, this is presented as an example, and in another embodiment, the display surface IS of the display device DD may have a curved shape.

[0092] The normal (e.g., vertical) direction of the display surface IS (i.e., the direction of the display image IM in the thickness direction of the display device DD) is indicated by a third direction DR3. The front surface (or top surface) and the rear surface (or bottom surface) of each member can be distinguished by the third direction DR3.

[0093] The fourth direction DR4 (see Figure 4 ) may be a direction between the first direction DR1 and the second direction DR2. The fourth direction DR4 may be disposed on a surface parallel to a surface defined by the first direction DR1 and the second direction DR2. In some embodiments, the directions indicated by the first direction DR1, the second direction DR2, the third direction DR3, and the fourth direction DR4 are relative concepts and thus may be changed to other directions.

[0094] The display surface IS displaying the image IM in the electronic device EA may correspond to the front surface of the display device DD and to the front surface of the window WP. Hereinafter, the same reference numerals will be given to the front surface of the electronic device EA and the front surface of the window WP. The image IM may include not only a moving image but also a still image. In some embodiments, the electronic device EA may include a foldable display device including a folding area and a non-folding area or a bent display device including at least one bent portion.

[0095] The housing HAU may house the display device DD. The housing HAU may be configured to cover the display device DD to expose the top surface as the display surface IS of the display device DD. The housing HAU may expose the entire top surface while covering the side and bottom surfaces of the display device DD. However, embodiments of the present disclosure are not limited thereto, and the housing HAU may cover a portion of the top surface as well as the side and bottom surfaces of the display device DD.

[0096] In the electronic device EA according to the embodiment, the window WP may include an optically transparent insulating material. The window WP may include a transmission area TA and a frame area BZA. The front surface FS of the window WP including the transmission area TA and the frame area BZA corresponds to the front surface FS of the electronic device EA. The user may observe an image provided through the transmission area TA corresponding to the front surface FS of the electronic device EA.

[0097] exist Figure 1 and Figure 2 , the transmission area TA is shown to have a rounded rectangular shape with rounded corners. However, this is presented as an example, and the transmission area TA may have one or more suitable shapes and is not limited to any one embodiment.

[0098] The transmission area TA may be optically transparent. The frame area BZA may be an area with relatively low optical transmittance. The frame area BZA may have a set or predetermined color. The frame area BZA may be adjacent to the transmission area TA and around the transmission area TA (e.g., surrounding the transmission area TA). The frame area BZA may define the shape of the transmission area TA. However, the embodiment is not limited thereto, and the frame area BZA may be disposed adjacent to at least one side or only one side of the transmission area TA, and a portion of the frame area BZA may not be provided.

[0099] The display device DD may be disposed below the window WP. As used herein, "below" may indicate a direction opposite to a direction in which the display device DD provides the image IM.

[0100] In an embodiment, the display device DD may be basically configured to generate an image IM. The image IM generated in the display device DD is displayed on the display surface IS and is observed from the outside by the user through the transmission area TA. The display device DD includes a display area DA and a non-display area NDA. The display area DA may be activated in response to an electrical signal. The non-display area NDA may be covered by a frame area BZA. The non-display area NDA is adjacent to the display area DA. The non-display area NDA may surround the display area DA.

[0101] The display device DD may include a display panel DP and an optical member PP disposed on the display panel DP. The display panel DP may include a display element layer DP-EL. The display element layer DP-EL includes a light emitting element ED (see Figure 6 ).

[0102] The display device DD may include a plurality of light emitting elements ED-1, ED-2 and ED-3 (see Figure 5 ). The optical member PP may be disposed on the display panel DP to control reflected light on the display panel DP due to external light. For example, the optical member PP may include a polarizing layer or a color filter layer.

[0103] In the display device DD according to the embodiment, the display panel DP may be a light-emitting display panel. For example, the display panel DP may be a quantum dot light-emitting display panel including quantum dot light-emitting elements. However, the embodiments of the present disclosure are not limited thereto, and the display panel DP may be an organic light-emitting display panel including organic electroluminescent elements.

[0104] The display panel DP may include a base substrate BS, a circuit layer DP-CL disposed on the base substrate BS, and a display element layer DP-EL disposed on the circuit layer DP-CL.

[0105] The base substrate BS may be a member that provides a base surface on which the display element layer DP-EL is disposed. The base substrate BS may be a glass substrate, a metal substrate, a plastic substrate, etc. However, the embodiments of the present disclosure are not limited thereto, and the base substrate BS may be an inorganic layer, an organic layer, or a composite material layer. The base substrate BS may be a flexible substrate that can be easily bent or folded.

[0106] In an embodiment, the circuit layer DP-CL may be disposed on the base substrate BS and include a plurality of transistors (not shown). For example, the circuit layer DP-CL may include a switching transistor and a driving transistor for driving the light emitting element of the display element layer DP-EL.

[0107] Figure 4 is a plan view showing a display device DD according to an embodiment of the present disclosure. Figure 5 is a cross-sectional view of a display device DD according to an embodiment of the present disclosure. Figure 5 It is along Figure 4 A cross-sectional view taken along line II-II'.

[0108] refer to Figure 4 and Figure 5, the display device DD according to the embodiment includes a plurality of light emitting elements ED-1, ED-2, and ED-3. In some embodiments, the display device DD according to the embodiment may include a display panel DP and an optical member PP disposed on the display panel DP, the display panel DP including the plurality of light emitting elements ED-1, ED-2, and ED-3. In some embodiments, in the display device DD according to the embodiment, the optical member PP may not be provided.

[0109] The display panel DP may include a base substrate BS and a circuit layer DP-CL and a display element layer DP-EL disposed on the base substrate BS, and the display element layer DP-EL may include a pixel defining film PDL, light emitting elements ED-1, ED-2 and ED-3 disposed between the pixel defining films PDL, and an encapsulation layer TFE disposed on the light emitting elements ED-1, ED-2 and ED-3.

[0110] The display device DD may include a peripheral area NPXA and light emitting areas PXA-B, PXA-G, and PXA-R. The light emitting areas PXA-B, PXA-G, and PXA-R may be areas that emit light generated in the light emitting elements ED-1, ED-2, and ED-3, respectively. The light emitting areas PXA-B, PXA-G, and PXA-R may be spaced apart from each other on a plane.

[0111] The light emitting regions PXA-B, PXA-G, and PXA-R may be divided into a plurality of groups according to the colors of light generated in the light emitting elements ED-1, ED-2, and ED-3. Figure 4 and Figure 5 In the display device DD according to the embodiment shown in , it is shown that three light emitting regions PXA-B, PXA-G and PXA-R can be configured to emit blue light, green light and red light respectively as an example. For example, the display device DD according to the embodiment may include a blue light emitting region PXA-B, a green light emitting region PXA-G and a red light emitting region PXA-R that are distinguished from each other.

[0112] A plurality of light emitting elements ED-1, ED-2, and ED-3 may be configured to emit light in wavelength ranges different from each other. For example, the display device DD according to the embodiment may include a first light emitting element ED-1 configured to emit blue light as the first light, a second light emitting element ED-2 configured to emit green light as the second light, and a third light emitting element ED-3 configured to emit red light as the third light. However, the embodiments of the present disclosure are not limited thereto, and the first light emitting element ED-1, the second light emitting element ED-2, and the third light emitting element ED-3 may be configured to emit light in substantially the same wavelength range, or at least one light emitting element may be configured to emit light in different wavelength ranges.

[0113] For example, the blue light emitting region PXA-B, the green light emitting region PXA-G, and the third light emitting region PXA-R of the display device DD may correspond to the first light emitting element ED-1, the second light emitting element ED-2, and the third light emitting element ED-3, respectively.

[0114] The display device DD according to the embodiment may include a plurality of light emitting elements ED-1, ED-2, and ED-3, and the light emitting elements ED-1, ED-2, and ED-3 may include emission layers EML-B, EML-G, and EML-R including quantum dots QD1, QD2, and QD3.

[0115] The first emission layer EML-B of the first light-emitting element ED-1 may include a first quantum dot QD1. The first quantum dot QD1 may be configured to emit blue light as the first light. The second emission layer EML-G of the second light-emitting element ED-2 and the third emission layer EML-R of the third light-emitting element ED-3 may include a second quantum dot QD2 and a third quantum dot QD3, respectively. The second quantum dot QD2 and the third quantum dot QD3 may be configured to emit green light as the second light and red light as the third light, respectively.

[0116] In an embodiment, the first light may have a central wavelength within a wavelength range of about 410 nm to about 480 nm, the second light may have a central wavelength within a wavelength range of about 500 nm to about 570 nm, and the third light may have a central wavelength within a wavelength range of about 625 nm to about 675 nm.

[0117] As used herein, a quantum dot refers to a crystal of a semiconductor compound. The quantum dot can be configured to emit light having one or more suitable emission wavelengths depending on the size of the crystal. The quantum dot can be configured to emit light having one or more suitable emission wavelengths by adjusting the ratio of elements in the quantum dot compound.

[0118] The quantum dot may have a diameter of, for example, about 1 nm to about 10 nm.

[0119] Quantum dots can be synthesized by wet chemical processes, metal organic chemical vapor deposition processes, molecular beam epitaxy processes, or similar processes.

[0120] The wet chemical process is a method of growing crystals of quantum dot particles after mixing an organic solvent with a precursor material. As the crystal grows, the organic solvent can naturally act as a dispersant that coordinates to the surface of the quantum dot crystal and can adjust the growth of the crystal. Therefore, compared with vapor deposition methods such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), the wet chemical process can control the growth of quantum dot particles through a simpler and more cost-effective process.

[0121] The quantum dots QD1, QD2 and QD3 included in the emission layer EML according to the embodiment may be semiconductor nanocrystals selected from II-VI group compounds, III-V group compounds, III-VI group compounds, I-III-VI group compounds, IV-VI group compounds, IV group elements, IV group compounds and combinations thereof.

[0122] The II-VI compound may be selected from the group consisting of binary compounds, ternary compounds and quaternary compounds, wherein the binary compound is selected from the group consisting of CdSe, CdTe, CdS, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof, and the ternary compound is selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, The quaternary compound is selected from the group consisting of CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof, and the quaternary compound is selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and mixtures thereof. In some embodiments, the II-VI semiconductor compound may also include a Group I metal and / or a Group IV element. The I-II-VI compound may be CuZnS or the like, and ZnSnS or the like may be selected as the II-IV-VI compound. The I-II-IV-VI compound may be selected from the quaternary compound, and the quaternary compound is selected from the group consisting of Cu 2 ZnSnS 2 , Cu 2 ZnSnS 4 , Cu 2 ZnSnSe 4 、Ag 2 ZnSnS 2 and mixtures thereof.

[0123] The III-VI compounds may include compounds such as In 2 S 3 、In 2 Se 3 Binary compounds such as InGaS 3 、InGaSe 3 ternary compounds, or any combination thereof.

[0124] The I-III-VI group compound can be selected from ternary compounds or compounds such as AgInGaS 2 、CuInGaS 2 The ternary compound is selected from the group consisting of AgInS, AgInS 2 、CuInS、CuInS 2 、AgGaS 2 、CuGaS 2 、CuGaO 2 、AgGaO 2 、AgAlO 2 and mixtures thereof.

[0125] The III-V compound may be selected from the group consisting of binary compounds, ternary compounds and quaternary compounds, the binary compound being selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof, the ternary compound being selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb and mixtures thereof, the quaternary compound being composed of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof. In some embodiments, the III-V compound may also include a Group II metal. For example, InZnP or the like may be selected as the III-II-V group compound.

[0126] The IV-VI Group compound can be selected from the group consisting of binary compounds, ternary compounds and quaternary compounds, the binary compound is selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and their mixtures, the ternary compound is selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and their mixtures, and the quaternary compound is selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe.

[0127] Examples of II-IV-V semiconductor compounds may be selected from ZnSnP, ZnSnP2 、ZnSnAs 2 、ZnGeP 2 、ZnGeAs 2 、CdSnP 2 、CdGeP 2 and mixtures thereof.

[0128] The Group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof. The Group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0129] Each element included in a multi-component compound such as a binary compound, a ternary compound, and a quaternary compound may be present in the particle at a substantially uniform concentration or a non-uniform concentration. For example, the above formula may refer to the type (species) of the element included in the compound, and the ratio of the elements in the compound may be different. For example, AgInGaS 2 Can refer to AgIn x Ga 1-x S 2 (where x is a real number between 0 and 1).

[0130] In this case, the binary compound, ternary compound, or quaternary compound may be present in the particle at a substantially uniform concentration, or may be present in substantially the same particle in which the concentration distribution may be divided into partially different states. In some embodiments, the binary compound, ternary compound, or quaternary compound may also have a core / shell structure in which one quantum dot surrounds another quantum dot. The core / shell structure may have a concentration gradient in which the concentration of the element present in the shell may gradually decrease toward the core.

[0131] In some embodiments, quantum dots QD1, QD2, and QD3 may have a core / shell structure comprising a core comprising the above-mentioned nanocrystals and a shell around the core (e.g., surrounding the core). The shells of quantum dots QD1, QD2, and QD3 may be used as a protective layer for preventing or reducing chemical modification of the core to maintain semiconductor properties and / or a charging layer for imparting electrophoretic properties to the quantum dots. The shell may be a single layer or a multilayer. Examples of shells of quantum dots QD1, QD2, and QD3 may include metal oxides or non-metal oxides, semiconductor compounds, or combinations thereof.

[0132] For example, examples of metal oxides or non-metal oxides may include: 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , NiO; or binary compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 、CoMn 2 O 4 ternary compound, but the present disclosure is not limited thereto.

[0133] In some embodiments, examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc. However, the present disclosure is not limited thereto.

[0134] Quantum dots QD1, QD2, and QD3 may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, and about 30 nm or less. When the FWHM is within this range, color purity or color reproducibility may be improved. In some embodiments, light emitted by quantum dots QD1, QD2, and QD3 may be emitted in all directions, and thus the optical viewing angle may be improved.

[0135] In some embodiments, the form of quantum dots QD1, QD2 and QD3 is not particularly limited as long as it is a form commonly used in the art, but more specifically, quantum dots including spherical, pyramidal, multi-armed or cubic nanoparticles, nanotubes, nanowires, nanofibers and / or nanosheets, etc. (for example, in the form of spherical, pyramidal, multi-armed or cubic nanoparticles, nanotubes, nanowires, nanofibers and / or nanosheets, etc.) can be used.

[0136] Quantum dots QD1, QD2, and QD3 can adjust the band gap by adjusting the size of the quantum dots or adjusting the ratio of elements in the quantum dot compound, and thus can emit light having one or more suitable wavelengths in the quantum dot emission layer. Therefore, when using quantum dots as previously described (quantum dots having different sizes or having different ratios of elements in the quantum dot compound), a light-emitting element configured to emit light having one or more suitable wavelengths can be realized. For example, the size of quantum dots QD1, QD2, and QD3 and the ratio of elements in the quantum dot compound can be selected to emit red light, green light, and / or blue light. In some embodiments, quantum dots QD1, QD2, and QD3 can be configured to emit white light by combining one or more suitable colors of light.

[0137] In quantum dots QD1, QD2, and QD3, the color of the emitted light can be adjusted according to the size of the particles, and thus quantum dots QD1, QD2, and QD3 can have a variety of emission colors, such as blue, red, or green. The smaller the particle size of quantum dots QD1, QD2, and QD3, the more likely it is to emit light in the short wavelength region. For example, among quantum dots QD1, QD2, and QD3 having the same core, quantum dots emitting green light may have a smaller particle size than quantum dots emitting red light. In some embodiments, among quantum dots QD1, QD2, and QD3 having the same core, quantum dots emitting blue light may have a smaller particle size than quantum dots emitting green light. However, the embodiments of the present disclosure are not limited thereto, and even in quantum dots QD1, QD2, and QD3 having the same core, the particle size may be adjusted according to the material forming the shell and / or the thickness of the shell, etc.

[0138] In some embodiments, when the quantum dots QD1, QD2, and QD3 have a plurality of emission colors such as blue, red, and green, the materials of the cores may be different from each other in the quantum dots QD1, QD2, and QD3 each having a different emission color.

[0139] In an embodiment, each of the first quantum dot QD1, the second quantum dot QD2, and the third quantum dot QD3 may have diameters different from each other. For example, the first quantum dot QD1 used in the first light-emitting element ED-1 configured to emit light in a relatively short wavelength range may have a relatively small average diameter compared to the second quantum dot QD2 of the second light-emitting element ED-2 configured to emit light in a relatively long wavelength range and the third quantum dot QD3 of the third light-emitting element ED-3.

[0140] In some embodiments, as used herein, the average diameter corresponds to the arithmetic mean of the diameters of a plurality of quantum dot particles. In some embodiments, the diameter of a quantum dot may be the average of the widths of the quantum dot particles in a cross section.

[0141] The relationship between the average diameters of the first quantum dot QD1, the second quantum dot QD2, and the third quantum dot QD3 is not limited to the above-mentioned limitations. Figure 5 It is shown that the first quantum dot QD1, the second quantum dot QD2, and the third quantum dot QD3 have sizes similar to each other, but unlike what is shown, the first quantum dot QD1, the second quantum dot QD2, and the third quantum dot QD3 included in the light emitting elements ED-1, ED-2, and ED-3 may have sizes different from each other. In some embodiments, the average diameters of two quantum dots selected from the first quantum dot QD1, the second quantum dot QD2, and the third quantum dot QD3 may be similar, and the average diameter of another quantum dot may be different.

[0142] In the light-emitting elements ED-1, ED-2 and ED-3 according to the embodiments, the emission layers EML-B, EML-G and EML-R may include a host and a dopant. In an embodiment, the emission layers EML-B, EML-G and EML-R may include quantum dots QD1, QD2 and QD3 as dopant materials. In some embodiments, in an embodiment, the emission layers EML-B, EML-G and EML-R may also include a host material. In some embodiments, in the light-emitting elements ED-1, ED-2 and ED-3, the emission layers EML-B, EML-G and EML-R may be configured to emit fluorescence. For example, quantum dots QD1, QD2 and QD3 may be used as fluorescent dopant materials.

[0143] In some embodiments, in each of the first quantum dot QD1, the second quantum dot QD2, and the third quantum dot QD3, a ligand or the like may also be chemically bonded to the surface thereof in order to improve dispersibility.

[0144] exist Figure 4 and Figure 5 In the display device DD shown in , the light emitting regions PXA-B, PXA-G, and PXA-R may have different areas. In this case, the area may indicate an area when viewed on a plane defined by the first direction DR1 and the second direction DR2 (eg, in a plan view).

[0145] The light emitting regions PXA-B, PXA-G, and PXA-R may have different areas depending on the color of light emitted in the emission layers EML-B, EML-G, and EML-R of the light emitting elements ED-1, ED-2, and ED-3. Figure 4 and Figure 5, in the display device DD according to the embodiment, the blue light emitting region PXA-B corresponding to the first light emitting element ED-1 configured to emit blue light may have the largest area, and the green light emitting region PXA-G corresponding to the second light emitting element ED-2 configured to emit green light may have the smallest area. However, the embodiments of the present disclosure are not limited thereto, and the light emitting regions PXA-B, PXA-G, and PXA-R may be configured to emit light of colors other than blue, green, and red. In some embodiments, the light emitting regions PXA-B, PXA-G, and PXA-R may have the same area, or the light emitting regions PXA-B, PXA-G, and PXA-R may be arranged in a manner similar to that of the first light emitting element ED-1. Figure 4 Different area ratios are provided in the area ratios shown.

[0146] The light-emitting regions PXA-B, PXA-G, and PXA-R may each be a region separated by a pixel defining film PDL. The peripheral region NPXA may be a region between adjacent light-emitting regions PXA-B, PXA-G, and PXA-R, and may correspond to the pixel defining film PDL. In some embodiments, as used herein, the light-emitting regions PXA-B, PXA-G, and PXA-R may correspond to pixels, respectively. The pixel defining film PDL may separate the light-emitting elements ED-1, ED-2, and ED-3. The emission layers EML-B, EML-G, and EML-R of the light-emitting elements ED-1, ED-2, and ED-3 may be disposed in openings OH1, OH2, and OH3 defined in the pixel defining film PDL to be separated. In an embodiment, the first emission layer EML-B of the first light emitting element ED-1 may be disposed in the first opening OH1, the second emission layer EML-G of the second light emitting element ED-2 may be disposed in the second opening OH2, and the third emission layer EML-R of the third light emitting element ED-3 may be disposed in the third opening OH3.

[0147] The pixel defining film PDL may be formed of a polymer resin. For example, the pixel defining film PDL may be formed to include a polyacrylate resin or a polyimide resin. In some embodiments, the pixel defining film PDL may be formed by including an inorganic material in addition to the polymer resin. In some embodiments, the pixel defining film PDL may be formed to include a light absorbing material, or may be formed to include a black pigment or a black dye. A pixel defining film PDL formed to include a black pigment or a black dye may realize a black pixel defining film. When forming the pixel defining film PDL, carbon black or the like may be used as a black pigment or a black dye, but the embodiments of the present disclosure are not limited thereto.

[0148] In some embodiments, the pixel definition layer PDL may be formed of an inorganic material. For example, the pixel definition layer PDL may be formed to include silicon nitride (SiN x), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ) and / or silicon oxynitride (SiN x O y ), etc., and x>y>0. The pixel definition film PDL may define the light emitting regions PXA-B, PXA-G, and PXA-R. The light emitting regions PXA-B, PXA-G, and PXA-R and the peripheral region NPXA may be separated by the pixel definition film PDL.

[0149] The light-emitting elements ED-1, ED-2 and ED-3 may each include a first electrode EL1, a corresponding one selected from hole transport regions HTR-1, HTR-2 and HTR-3 arranged on the first electrode EL1, a corresponding one selected from emission layers EML-B, EML-G and EML-R arranged on the corresponding one selected from hole transport regions HTR-1, HTR-2 and HTR-3, a corresponding one selected from electron transport regions ETR-1, ETR-2 and ETR-3 arranged on the corresponding one selected from emission layers EML-B, EML-G and EML-R, and a second electrode EL2 arranged on the corresponding one selected from electron transport regions ETR-1, ETR-2 and ETR-3.

[0150] The hole transport regions HTR-1, HTR-2, and HTR-3 and the electron transport regions ETR-1, ETR-2, and ETR-3 included in the light emitting elements ED-1, ED-2, and ED-3 may be disposed in the openings OH1, OH2, and OH3 defined in the pixel defining film PDL to be separated.

[0151] For example, the first hole transport region HTR-1 and the first electron transport region ETR-1, each included in the first light-emitting element ED-1, may be disposed adjacent to the first emission layer EML-B, and may be patterned to be disposed in the first opening OH1 in which the first emission layer EML-B is disposed. The second hole transport region HTR-2 and the second electron transport region ETR-2, each included in the second light-emitting element ED-2, may be disposed adjacent to the second emission layer EML-G, and may be patterned to be disposed in the second opening OH2 in which the second emission layer EML-G is disposed. The third hole transport region HTR-3 and the third electron transport region ETR-3, each included in the third light-emitting element ED-3, may be disposed adjacent to the third emission layer EML-R, and may be patterned to be disposed in the third opening OH3 in which the third emission layer EML-R is disposed. However, the embodiments of the present disclosure are not limited thereto, and the hole transport regions HTR-1, HTR-2, and HTR-3 and the electron transport regions ETR-1, ETR-2, and ETR-3 may be provided as a common layer commonly disposed in the light emitting regions PXA-B, PXA-G, and PXA-R and the peripheral region NPXA.

[0152] In an embodiment, each of the hole transport regions HTR-1, HTR-2, and HTR-3 and the electron transport regions ETR-1, ETR-2, and ETR-3 may be provided in the openings OH1, OH2, and OH3 defined in the pixel defining film PDL through a printing process.

[0153] The encapsulation layer TFE may cover the light emitting elements ED-1, ED-2 and ED-3. The encapsulation layer TFE may seal the display element layer DP-EL. The encapsulation layer TFE may be a thin film encapsulation layer. The encapsulation layer TFE may be a single layer or a multilayer in which multiple layers are stacked. The encapsulation layer TFE may include at least one insulating layer. The encapsulation layer TFE according to the embodiment may include at least one inorganic layer (hereinafter referred to as an encapsulation inorganic layer). In some embodiments, the encapsulation layer TFE according to the embodiment may include at least one organic layer (hereinafter referred to as an encapsulation organic layer) and at least one encapsulation inorganic layer.

[0154] The encapsulated inorganic layer can protect the display element layer DP-EL from moisture / oxygen, and the encapsulated organic layer can protect the display element layer DP-EL from foreign matter such as dust particles. The encapsulated inorganic layer may include silicon nitride, silicon oxynitride, silicon oxide, titanium oxide and / or aluminum oxide, etc., but is not particularly limited thereto. The encapsulated organic layer may include acrylic compounds and / or epoxy compounds, etc. The encapsulated organic layer may include a photopolymerizable organic material, but is not particularly limited thereto.

[0155] The encapsulation layer TFE may be disposed on the second electrode EL2 and may be disposed to fill a portion of the openings OH1 , OH2 , and OH3 .

[0156] In some embodiments, Figure 5 In the display device DD according to the embodiment shown in , the emission layers EML-B, EML-G and EML-R of the first light-emitting element ED-1, the second light-emitting element ED-2 and the third light-emitting element ED-3 have similar thicknesses, but the embodiments of the present disclosure are not limited thereto. For example, in an embodiment, the emission layers EML-B, EML-G and EML-R of the first light-emitting element ED-1, the second light-emitting element ED-2 and the third light-emitting element ED-3 may have different thicknesses. In some embodiments, the hole transport regions HTR-1, HTR-2 and HTR-3 and the electron transport regions ETR-1, ETR-2 and ETR-3 of the first light-emitting element ED-1, the second light-emitting element ED-2 and the third light-emitting element ED-3 may also have different thicknesses.

[0157] refer to Figure 4 The blue light emitting regions PXA-B and the light emitting regions PXA-R may be alternately arranged along the first direction DR1 to configure a first group PXG1, and the green light emitting regions PXA-G may be arranged along the first direction DR1 to configure a second group PXG2.

[0158] The first group PXG1 may be spaced (eg, spaced apart and / or separated) from the second group PXG2 in the second direction DR2. The first group PXG1 and the second group PXG2 may each be provided in plural. The first group PXG1 and the second group PXG2 may be alternately arranged along the second direction DR2.

[0159] One of the plurality of green light emitting regions PXA-G may be spaced (e.g., spaced apart and / or separated) from one selected from the plurality of blue light emitting regions PXA-B or one selected from the plurality of red light emitting regions PXA-R in a fourth direction DR4. The fourth direction DR4 may be a direction between the first direction DR1 and the second direction DR2.

[0160] Figure 4 The arrangement structure of the light emitting regions PXA-B, PXA-G, and PXA-R shown in FIG. 1 may be named However, in the display device DD according to the embodiment, the arrangement structure of the light emitting regions PXA-B, PXA-G, and PXA-R is not limited to Figure 4For example, in the embodiment, the light emitting regions PXA-B, PXA-G, and PXA-R may have a stripe structure in which the blue light emitting regions PXA-B, the green light emitting regions PXA-G, and the red light emitting regions PXA-R are sequentially and alternately arranged along the first direction DR1.

[0161] refer to Figure 3 and Figure 5 , the display device DD according to the embodiment may further include an optical member PP. The optical member PP may block or reduce external light provided to the display panel DP from the outside of the display device DD. The optical member PP may block or reduce some of the external light. The optical member PP may have an anti-reflection function, which minimizes reflected light generated due to external light.

[0162] exist Figure 5 In the embodiment shown in , the optical member PP may include a base layer BL and a color filter layer CFL. The display device DD according to the embodiment may further include a color filter layer CFL disposed on the light emitting elements ED-1, ED-2, and ED-3 of the display panel DP.

[0163] The base layer BL may be a member providing a base substrate on which the color filter layer CFL, etc. is disposed. The base layer BL may be an organic substrate, a metal substrate, and / or a plastic substrate, etc. However, the embodiments of the present disclosure are not limited thereto, and the base layer BL may be an inorganic layer, an organic layer, or a composite material layer.

[0164] The color filter layer CFL may include a light blocking portion BM and a color filter portion CF. The color filter portion CF may include a plurality of filters CF-B, CF-G, and CF-R. For example, the color filter layer CFL may include a first filter CF-B configured to transmit a first light, a second filter CF-G configured to transmit a second light, and a third filter CF-R configured to transmit a third light. For example, the first filter CF-B may be a blue filter, the second filter CF-G may be a green filter, and the third filter CF-R may be a red filter.

[0165] The filters CF-B, CF-G and CF-R may each include a polymer photosensitive resin and / or a pigment or dye. The first filter CF-B may include a blue pigment or dye, the second filter CF-G may include a green pigment or dye, and the third filter CF-R may include a red pigment or dye.

[0166] In some embodiments, the embodiments of the present disclosure are not limited thereto, and the first filter CF-B may not include (e.g., exclude) a pigment or dye. The first filter CF-B may include a polymer photosensitive resin and may not include a pigment or dye. The first filter CF-B may be transparent. The first filter CF-B may be formed of a transparent photosensitive resin.

[0167] The light blocking portion BM may be a black matrix. The light blocking portion BM may be formed to include an organic light blocking material or an inorganic light blocking material containing a black pigment or a black dye. The light blocking portion BM may prevent or reduce light leakage and separate the boundaries between the adjacent filters CF-B, CF-G, and CF-R.

[0168] The color filter layer CFL may further include a buffer layer BFL. For example, the buffer layer BFL may be a protective layer for protecting the color filters CF-B, CF-G, and CF-R. The buffer layer BFL may be an inorganic layer including at least one inorganic material selected from silicon nitride, silicon oxide, and silicon oxynitride. The buffer layer BFL may be formed of a single layer or a plurality of layers.

[0169] In an embodiment, Figure 5 The first filter CF-B of the color filter layer CFL is shown to overlap with the second filter CF-G and the third filter CF-R, but the embodiments of the present disclosure are not limited thereto. For example, the first filter CF-B, the second filter CF-G, and the third filter CF-R may be separated by the light blocking portion BM and may not overlap with each other. In some embodiments, in an embodiment, the first filter CF-B, the second filter CF-G, and the third filter CF-R may be arranged to correspond to the blue light emitting area PXA-B, the green light emitting area PXA-G, and the red light emitting area PXA-R, respectively. In some embodiments, the color filter layer CFL may not be provided in the display device DD according to the embodiment.

[0170] and Figure 5 Unlike what is shown in , the display device DD according to the embodiment may include a polarization layer as an optical member PP instead of the color filter layer CFL. The polarization layer may block or reduce external light provided from the outside to the display panel DP. The polarization layer may block or reduce some of the external light.

[0171] In some embodiments, the polarization layer may reduce the reflected light generated on the display panel DP due to external light. For example, the polarization layer may function to block or reduce the reflected light when light provided from the outside of the display device DD is incident on the display panel DP and then emitted again. The polarization layer may be a circular polarizer with an anti-reflection function, or the polarization layer may include a linear polarizer and a λ / 4 phase retarder. In some embodiments, the polarization layer may be disposed on the base layer BL to be exposed, or the polarization layer may be disposed below the base layer BL.

[0172] Figures 6 to 9 is a cross-sectional view of a light emitting element ED according to an embodiment of the present disclosure.

[0173] refer to Figure 6 , the light emitting element ED according to the embodiment may include a first electrode EL1 , a hole transport region HTR, an emission layer EML, an electron transport region ETR, and a second electrode EL2 , which are sequentially stacked.

[0174] Figure 7 1 shows a cross-sectional view of a light emitting element ED according to an embodiment, and Figure 6 In comparison, Figure 7 In some embodiments, the hole transport region HTR includes a hole injection layer HIL and a hole transport layer HTL, and the electron transport region ETR includes an electron injection layer EIL and an electron transport layer ETL. Figure 8 1 shows a cross-sectional view of a light emitting element ED according to an embodiment, and Figure 6 In comparison, Figure 8 In the embodiment, the hole transport region HTR includes a hole injection layer HIL, a hole transport layer HTL and an electron blocking layer EBL, and the electron transport region ETR includes an electron injection layer EIL, an electron transport layer ETL and a hole blocking layer HBL. Figure 7 compared to, Fig. 9 A cross-sectional view of a light emitting element ED including a capping layer CPL disposed on the second electrode EL2 according to an embodiment is shown.

[0175] In the light emitting element ED according to the embodiment, the first electrode EL1 has conductivity (eg, the first electrode EL1 is a conductor). The first electrode EL1 may be formed of a metal alloy or a conductive compound. The first electrode EL1 may be an anode. The first electrode EL1 may be a pixel electrode.

[0176] In the light emitting element ED according to the embodiment, the first electrode EL1 may be a reflective electrode. However, the embodiments of the present disclosure are not limited thereto. For example, the first electrode EL1 may be a transmissive electrode or a semi-transmissive and semi-reflective electrode. When the first electrode EL1 is a semi-transmissive and semi-reflective electrode or a reflective electrode, the first electrode EL1 may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti or a compound thereof or a mixture thereof (e.g., a mixture of Ag and Mg), or a material having a multilayer structure such as LiF / Ca or LiF / Al. In some embodiments, the first electrode EL1 may be a multilayer structure including a reflective film or a semi-transmissive and semi-reflective film each formed by the above-mentioned materials and a transparent conductive film formed by indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) and / or indium tin zinc oxide (ITZO), etc. For example, the first electrode EL1 may be a multilayer metal film, and may have a structure of a metal film stack of ITO / Ag / ITO.

[0177] The hole transport region HTR is provided on the first electrode EL1. The hole transport region HTR may include a hole injection layer HIL, a hole transport layer HTL, etc. In some embodiments, in addition to the hole injection layer HIL and the hole transport layer HTL, the hole transport region HTR may also include at least one selected from a hole buffer layer and an electron blocking layer EBL. The hole buffer layer may compensate for the resonance distance according to the wavelength of light emitted from the emission layer EML, and thus the luminous efficiency may be improved. The material that may be included in the hole transport region HTR may be used as the material included in the hole buffer layer. The electron blocking layer EBL is used to prevent or reduce electrons from being injected from the electron transport region ETR into the hole transport region HTR.

[0178] The hole transport region HTR may have a single layer formed of a single material, a single layer formed of a plurality of different materials, or a multilayer structure having a plurality of layers formed of a plurality of different materials. For example, the hole transport region HTR may have a single layer structure formed of a plurality of different materials, or may have a structure of a hole injection layer HIL / hole transport layer HTL, a hole injection layer HIL / hole transport layer HTL / hole buffer layer, a hole injection layer HIL / hole buffer layer, a hole transport layer HTL / hole buffer layer, and / or a hole injection layer HIL / hole transport layer HTL / electron blocking layer EBL, etc., stacked sequentially from the first electrode EL1. However, the embodiments of the present disclosure are not limited thereto.

[0179] The hole transport region HTR may be formed using one or more suitable methods such as a vacuum deposition method, a spin coating method, a casting method, a Langmuir-Blodgett (LB) method, an inkjet printing method, a laser printing method, and a laser induced thermal imaging (LITI) method.

[0180] For example, the hole injection layer HIL may include a phthalocyanine compound (such as copper phthalocyanine), N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine (DNTPD), 4,4',4"-[tris(3-methylphenyl)phenylamino]triphenylamine (m-MTDATA), 4,4'4"-tris(N,N-diphenylamino)triphenylamine (TDATA), 4,4',4"-tris{N,-(2-naphthyl)-N-phenylamino}-triphenylamine (2-TNATA), poly(3,4-ethylenedioxythiophene) / poly(4-phenylethylenedioxythiophene) / triphenylamine (4-TNATA), and poly(3,4-ethylenedioxythiophene) / triphenylamine (4-TNATA). The products include polyaniline / poly(4-styrene sulfonate) (PANI / PSS), polyaniline / dodecylbenzenesulfonate (PANI / DBSA), polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPD), triphenylamine-containing polyetherketone (TPAPEK), 4-isopropyl-4'-methyldiphenyliodonium [tetrakis(pentafluorophenyl)borate], dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexanitrile (HAT-CN), etc.

[0181] The hole transport layer HTL may include suitable general materials in the art. For example, the hole transport layer HTL may also include carbazole derivatives (such as 1,3-bis(N-carbazolyl)benzene (mCP), N-phenylcarbazole and polyvinylcarbazole), fluorine derivatives, triphenylamine derivatives (such as N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (TPD), 4,4',4"-tri(N-carbazolyl)triphenylamine (TCTA), N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPD), 4,4'-cyclohexylenebis[N,N-bis(4-methylphenyl)aniline] (TAPC), 4,4'-bis[N,N'-(3-methylphenyl)amino]-3,3'-dimethylbiphenyl (HMTPD)), etc.

[0182] The hole transport region HTR may have a thickness of about 5 nm to about 1500 nm (and, for example, about 10 nm to about 500 nm). The hole injection layer HIL may have a thickness of, for example, about 3 nm to about 100 nm, and the hole transport layer HTL may have a thickness of about 3 nm to about 100 nm. For example, the electron blocking layer EBL may have a thickness of about 1 nm to about 100 nm. When the thickness of the hole transport region HTR, the hole injection layer HIL, the hole transport layer HTL, and the electron blocking layer EBL is within the above range, a satisfactory degree of hole transport characteristics may be obtained without significantly increasing the driving voltage.

[0183] The emission layer EML is provided on the hole transport region HTR. The emission layer EML may have a thickness of, for example, about 10 nm to about 100 nm or about 10 nm to about 30 nm. The emission layer EML may have a single layer formed of a single material, a single layer formed of a plurality of different materials, or a multilayer structure having a plurality of layers formed of a plurality of different materials. In the light emitting element ED according to the embodiment, the emission layer EML may include quantum dots QD1, QD2, and QD3 (see Figure 5 ).

[0184] The emission layer EML can be formed using one or more suitable methods (such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB), inkjet printing, laser printing, and / or laser induced thermal imaging (LITI)). In an embodiment, the emission layer EML can be formed by providing a plurality of quantum dots QD1, QD2, and QD3 (see Figure 5 )'s quantum dot composition is used to form the emission layer EML.

[0185] In the light emitting element ED according to the embodiment, an electron transport region ETR may be provided on the emission layer EML. The electron transport region ETR may include at least one selected from the hole blocking layer HBL, the electron transport layer ETL, and the electron injection layer EIL, but the embodiment of the present disclosure is not limited thereto.

[0186] The electron transport region ETR may include inorganic particles MO (see Fig.12 ). The inorganic particles MO included in the electron transport region ETR (see Fig.12 ) may be a metal oxide containing zinc (Zn) and a first metal. Inorganic particles MO (see Fig.12 ) may be a metal oxide in which the first metal is doped to zinc. In an embodiment, the first metal may have a larger bond dissociation energy with oxygen than zinc. In an embodiment, the first metal may be tin (Sn), copper (Cu) or nickel (Ni). The inorganic particles MO will be described in more detail later.

[0187] The electron transport region ETR may be composed of an electron transport composition ICP (see Fig.12 ). For example, the electron transport region ETR may be formed by including inorganic particles MO (see Fig.12 ) and solvent SV (see Fig.12 ) of the electron transport composition ICP (see Fig.12 )form.

[0188] Based on quantum dots QD1, QD2 and QD3 (see Figure 5 The characteristics of the element can be determined by the quantum dots QD1, QD2 and QD3 (see Figure 5 ) is determined by the quantum efficiency, charge carrier balance, light extraction efficiency, leakage current, etc. of the light-emitting element ED including quantum dots QD1, QD2, and QD3 in the emission layer EML. For example, in order to improve the luminous efficiency of the light-emitting element ED including quantum dots QD1, QD2, and QD3 in the emission layer EML, methods such as adjusting the excitons to be bound by the emission layer, adjusting the holes and electrons to be smoothly transferred to the quantum dots QD1, QD2, and QD3, and / or preventing or reducing the leakage current can be used. To this end, in the case of a light-emitting element ED based on quantum dots QD1, QD2, and QD3 (see Figure 5 ) in the electron transport region ETR of the light emitting element ED, a method using a metal oxide material such as ZnO or ZnMgO may be used. However, in the case of using a metal oxide such as ZnO or ZnMgO in the electron transport region, the injection rate of electrons may be faster than the injection rate of holes, and therefore, there is a disadvantage that the charge carrier balance in the emission layer EML may be destroyed and thus the luminous efficiency and the element life may be reduced.

[0189] As used herein, since inorganic particles MO including zinc and a first metal having a higher bond dissociation energy with oxygen than zinc (Zn) are used in the electron transport region ETR (see Fig.12 ), so the electron injection rate in the electron transport region ETR can be adjusted, and thus the charge injection balance of the light emitting element ED can be improved, and the surface stability of the metal oxide can be stabilized, thereby improving the processability. Therefore, including the inorganic particles MO (see Fig.12 ) can have excellent or appropriate luminous efficiency and improved element life.

[0190] The electron transport region ETR may have a single layer formed of a single material, a single layer formed of a plurality of different materials, or a multilayer structure having a plurality of layers formed of a plurality of different materials.

[0191] For example, the electron transport region ETR may have a single-layer structure of an electron injection layer EIL or an electron transport layer ETL, or a single-layer structure formed by an electron injection material and an electron transport material. In some embodiments, the electron transport region ETR may have a single-layer structure formed by a plurality of different materials, or may have a structure of an electron transport layer ETL / electron injection layer EIL, or a hole blocking layer HBL / electron transport layer ETL / electron injection layer EIL stacked sequentially from the emission layer EML. However, the embodiments of the present disclosure are not limited thereto. For example, the electron transport region ETR may have a thickness of about 20 nm to about 150 nm.

[0192] When the electron transport region ETR has a multilayer structure having a plurality of layers, at least any one of the plurality of layers may be formed of the electron transport composition ICP according to an embodiment of the present disclosure (see Fig.12 ). For example, the electron transport region ETR may include an electron transport layer ETL disposed on the emission layer EML, an electron injection layer EIL disposed on the electron transport layer ETL, and the electron transport layer ETL may be made of an electron transport composition ICP according to an embodiment (see Fig.12 )form.

[0193] The electron transport region ETR may be formed by one or more suitable methods (such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB), inkjet printing, laser printing, laser induced thermal imaging (LITI), etc.). In an embodiment, the electron transport region ETR may be formed by providing an inorganic particle MO (see FIG. 1 ) via an inkjet printing method. Fig.12 ) and solvent SV (see Fig.12 ) of the electron transport composition ICP (see Fig.12 ) to form the electron transport region ETR.

[0194] In an embodiment, the electron transport region ETR may further include a suitable inorganic material in the art or a suitable organic material in the art.

[0195] When the electron transport region ETR includes the electron transport layer ETL, the electron transport region ETR may include an anthracene compound. However, the embodiments of the present disclosure are not limited thereto, and the electron transport region may include, for example, tris(8-hydroxyquinoline)aluminum (Alq 3), 1,3,5-tris[(3-pyridyl)-phenyl-3-yl]benzene, 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, bis[2-(diphenylphosphino)phenyl]ether oxide (DPEPO), 2-(4-(N-phenylbenzimidazol-1-yl)phenyl)-9,10-dinaphthylanthracene, 1,3,5-tris(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene (TPBi), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl 1,10-phenanthroline (Bphen), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ), 4-(naphthalene-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD), bis(2-methyl-8-hydroxyquinolinolato-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (Balq), bis(benzoquinolinolato-10-hydroxy)beryllium (Bebq 2 ), 9,10-di(naphthalene-2-yl)anthracene (AND), or a mixture thereof. The electron transport layer ETL may have a thickness of about 10 nm to about 100 nm (and, for example, about 15 nm to about 50 nm). When the thickness of the electron transport layer ETL is within the above range, a satisfactory degree of electron transport characteristics may be obtained without significantly increasing the driving voltage.

[0196] When the electron transport region ETR includes the electron injection layer EIL, a halogenated metal such as LiF, NaCl, CsF, RbCl, and RbI, a lanthanide metal such as Yb, a lanthanide metal such as Li 2 The electron injection layer EIL may be a metal oxide of O, BaO or lithium quinoline (Liq), but is not limited thereto. The electron injection layer EIL may also be formed of a material in which an electron transport material and a conductive organic metal salt are mixed. For example, the organic metal salt may include a metal acetate, a metal benzoate, a metal acetoacetate, a metal acetylacetonate or a metal stearate. The electron injection layer EIL may have a thickness of about 0.1 nm to about 10 nm or about 0.3 nm to about 9 nm. When the thickness of the electron injection layer EIL is within the above range, a satisfactory degree of electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0197] As previously described, the electron transport region ETR may include a hole blocking layer HBL. For example, the hole blocking layer HBL may include at least one selected from 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and 4,7-diphenyl-1,10-phenanthroline (Bphen), but is not limited thereto.

[0198] The second electrode EL2 may be provided on the electron transport region ETR. The second electrode EL2 may be a common electrode or a negative electrode. The second electrode EL2 may be a transmissive electrode, a semi-transmissive semi-reflective electrode or a reflective electrode. When the second electrode EL2 is a transmissive electrode, the second electrode EL2 may be formed of a transparent metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) and indium tin zinc oxide (ITZO).

[0199] When the second electrode EL2 is a semi-transmissive and semi-reflective electrode or a reflective electrode, the second electrode EL2 may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, or a compound or mixture (e.g., a mixture of Ag and Mg) each including Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, or a material having a multilayer structure such as LiF / Ca or LiF / Al. In some embodiments, the second electrode EL2 may have a multilayer structure including a reflective film or a semi-transmissive and semi-reflective film each formed of the above materials or a transparent conductive film formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), etc.

[0200] In some embodiments, the second electrode EL2 may be connected to the auxiliary electrode. When the second electrode EL2 is connected to the auxiliary electrode, the resistance of the second electrode EL2 may be reduced.

[0201] Fig.10 is a diagram showing a method for manufacturing a light emitting element ED (for example, Figures 6 to 9 Flowchart of the method for light-emitting element ED). Fig.11 is a detailed flow chart of forming an electron transport region (S300) according to an embodiment. In other words, Fig.11 is a flowchart breaking down an operation for forming an electron transport region ( S300 ) according to an embodiment.

[0202] refer to Fig.10 According to an embodiment, the method for manufacturing a light emitting element may include: forming a hole transport region on a first electrode (S100); forming an emission layer on the hole transport region (S200); forming an electron transport region on the emission layer (S300); and forming a second electrode on the electron transport region (S400).

[0203] refer to Fig.11, forming the electron transport region ( S300 ) according to an embodiment may include: manufacturing an electron transport composition ( S301 ); providing a preliminary electron transport region ( S302 ); and performing heat treatment of the preliminary electron transport region ( S303 ).

[0204] Fig.12 Schematically shows an electron transport composition ICP according to an embodiment. The electron transport composition ICP according to an embodiment of the present disclosure may be a light emitting element ED (eg, Figures 6 to 9 The electron transport region ETR (see Figures 6 to 9 However, the embodiments of the present disclosure are not limited thereto, and the electron transport composition ICP according to the embodiment may be a material that forms a hole transport region HTR selected from a light emitting element (see Figures 6 to 9 ) or a material of any one of the functional layers included in the light-emitting element ED.

[0205] As used herein, the term "substituted or unsubstituted" may refer to being selected from at least one substituent of the group consisting of deuterium atoms, halogen atoms, cyano groups, nitro groups, amino groups, silyl groups, oxy groups, sulfenyl groups, sulfonyl groups, carbonyl groups, boron groups, phosphine oxide groups, phosphine sulfide groups, alkyl groups, alkenyl groups, alkynyl groups, hydrocarbon ring groups, aryl groups and heterocyclic groups or being substituted or unsubstituted. In certain embodiments, each of the substituents previously exemplified may be substituted or unsubstituted. For example, biphenyl groups may be interpreted as aryl groups or phenyl groups substituted with phenyl groups.

[0206] As used herein, alkyl and alkylene groups may be straight or branched. As used herein, alkylene groups may refer to divalent alkyl groups. Alkyl and alkylene groups may each have 1 to 60 carbon atoms, 1 to 50 carbon atoms, 1 to 30 carbon atoms, 1 to 20 carbon atoms, 1 to 10 carbon atoms, or 1 to 6 carbon atoms. Examples of the alkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-undecyl alkyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, n-heonicosyl, n-docosyl, n-tricosyl, n-tetracosyl, n-pentacosyl, n-hexacosyl, n-heptacosyl, n-octacosyl, n-nonacosyl and / or n-triacontyl, etc., but are not limited thereto.

[0207] As used herein, cycloalkyl can refer to cyclic alkyl.Cyclic alkyl has 3 to 50 carbon atoms, 3 to 30 carbon atoms, 3 to 20 carbon atoms or 3 to 10 carbon atoms.The example of cycloalkyl includes cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, 4-methylcyclohexyl, 4-tert-butylcyclohexyl, cycloheptyl, cyclooctyl, cyclononyl, cyclodecyl, norbornyl, 1-adamantyl, 2-adamantyl, isobornyl, bicycloheptyl etc.However, embodiments of the present disclosure are not limited thereto.As used herein, cycloalkylene can refer to divalent cycloalkyl.

[0208] As used herein, heterocycloalkyl may refer to a cyclic heteroalkyl group including at least one selected from B, O, N, P, Si and S as a ring-forming atom. Heterocycloalkyl has 2 to 50 carbon atoms, 2 to 30 carbon atoms, 2 to 20 carbon atoms or 2 to 10 carbon atoms. Examples of heterocycloalkyl include tetrahydrofuranyl, tetrahydropyranyl, tetrahydrothienyl and / or 1,2,3,4-oxatriazolidinyl, etc., but are not limited thereto. As used herein, heterocycloalkylene may refer to a divalent heterocycloalkyl.

[0209] As used herein, aryl can refer to any functional group or any substituent derived from an aromatic hydrocarbon ring. Aryl can be a monocyclic aryl or a polycyclic aryl. Aryl has 6 to 30 ring-forming carbon atoms, 6 to 20 ring-forming carbon atoms, or 6 to 15 ring-forming carbon atoms. Examples of aryl include phenyl, naphthyl, fluorenyl, anthracenyl, phenanthrenyl, biphenyl, terphenyl, quaterphenyl, pentaphenyl, hexaphenyl, triphenylene, pyrenyl, benzofluoranthenyl, However, the embodiments of the present disclosure are not limited thereto.

[0210] As used herein, heteroaryl can include at least one selected from B, O, N, P, Si and S as a heteroatom. When heteroaryl includes two or more heteroatoms, the two or more heteroatoms can be the same or different from each other. Heteroaryl can be a monocyclic heterocyclic group or a polycyclic heterocyclic group. Heteroaryl can have 2 to 30 ring-forming carbon atoms, 2 to 20 ring-forming carbon atoms or 2 to 10 ring-forming carbon atoms. Examples of heteroaryl groups include thienyl, furanyl, pyrrolyl, imidazolyl, pyridyl, bipyridyl, pyrimidyl, triazinyl, triazolyl, acridinyl, pyridazinyl, pyrazinyl, quinolyl, quinazolinyl, quinoxalinyl, phenoxazinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, pyrazinopyrazinyl, isoquinolyl, indolyl, carbazolyl, N-arylcarbazolyl, N-heteroarylcarbazolyl, N-alkylcarbazolyl, benzoxazolyl, benzimidazolyl, benzothiazolyl, benzocarbazolyl, benzothienyl, dibenzothienyl, thienothiphenyl, benzofuranyl, phenanthrolinyl, thiazolyl, isoxazolyl, oxazolyl, oxadiazolyl, thiadiazolyl, phenothiazinyl, dibenzothirolyl, dibenzofuranyl, etc. However, embodiments of the present disclosure are not limited thereto.

[0211] As used herein, the above description of aryl groups may also apply to arylene groups, except that arylene groups are divalent groups. The above description of heteroaryl groups may also apply to heteroarylene groups, except that heteroarylene groups are divalent groups.

[0212] As used herein, silyl groups may include alkylsilyl groups and arylsilyl groups. Examples of silyl groups include trimethylsilyl groups, triethylsilyl groups, tert-butyldimethylsilyl groups, vinyldimethylsilyl groups, propyldimethylsilyl groups, triphenylsilyl groups, diphenylsilyl groups and / or phenylsilyl groups, but are not limited thereto.

[0213] As used herein, the number of carbon atoms of the amine group is not particularly limited, but the amine group may have 1 to 30 carbon atoms. The amine group may include an alkylamine group and an arylamine group. Examples of amine groups include methylamine group, dimethylamine group, phenylamine group, diphenylamine group, naphthylamine group and 9-methyl-anthrylamine group, but are not limited thereto.

[0214] As used herein, (meth)acrylate may refer to acrylate and methacrylate.

[0215] Reference again Fig.12 , the electron transport composition ICP according to the embodiment includes inorganic particles MO and solvent SV. The inorganic particles MO may be a metal oxide comprising zinc (Zn) and a first metal. The inorganic particles MO may be a metal oxide in which the first metal is doped to a metal oxide comprising zinc (Zn). In an embodiment, the first metal may have a larger bond dissociation energy with oxygen than zinc (Zn). In an embodiment, the first metal may be tin (Sn), copper (Cu) or nickel (Ni). The inorganic particles MO may include a first metal that replaces the zinc (Zn) ions in ZnO. Therefore, stability can be improved, and excellent or suitable electrical and optical properties can be exhibited.

[0216] The first metal may be doped into the metal oxide containing zinc (Zn), and may be used to control the electron mobility of zinc oxide and improve stability. Because the inorganic particles MO contain the first metal, which has a larger bond dissociation energy with oxygen than zinc (Zn), the inorganic particles MO may have improved stability and lower electron mobility compared to the metal oxide containing zinc (e.g., ZnO), and thus may suppress or reduce excessive electron injection into the emission layer EML (see Figures 6 to 9 ). Therefore, the ED of the light emitting element can be improved (see Figures 6 to 9 )’s luminous efficiency characteristics and component life characteristics.

[0217] The bond dissociation energy between the metal element and the oxygen atom is listed in Table 1. Referring to Table 1, as the first metal, tin (Sn), copper (Cu) or nickel (Ni) having a higher bond dissociation energy with oxygen than the bond dissociation energy of Zn-O can be selected. For example, the first metal can be tin (Sn).

[0218] Table 1

[0219] Bond dissociation energy (kJ / mol) Zn–O ＜250 Sn–O 528 Cu–O 343 Ni–O 392

[0220] In the embodiment, the inorganic particles MO are represented by Formula 1.

[0221] Formula 1

[0222] Zn 1-x M x O

[0223] Wherein, in Formula 1, M is a metal having a larger bond dissociation energy with oxygen than the above zinc (Zn). In an embodiment, M may be tin (Sn), copper (Cu) or nickel (Ni). For example, M may be tin (Sn).

[0224] x satisfies 0<x<1. In an embodiment, x may satisfy 0<x<0.2. For example, x may satisfy 0<x≤0.1. When x is 0.2 or greater, the electron mobility of the inorganic particles MO may decrease excessively, and thus the charge balance in the emission layer EML may be destroyed. When in Formula 1, x is within the above range, while stability may be improved, desired or suitable electron mobility characteristics may be exhibited. Therefore, the luminous efficiency characteristics and element life characteristics of the light-emitting element ED may be improved.

[0225] The properties of quantum dot-based components are determined by the quantum dots QD1, QD2 and QD3 (see Figure 5 ) is determined by the quantum efficiency, charge carrier balance, light extraction efficiency and / or leakage current of the emission layer. For example, in order to improve the luminous efficiency of the emission layer EML, methods such as adjusting the excitons to be bound by the emission layer, adjusting the holes and electrons to be smoothly transferred to the quantum dots QD1, QD2 and QD3 (see Figure 5 ) or a method for preventing or reducing leakage current. To achieve this purpose, in the case of a device comprising quantum dots QD1, QD2 and QD3 (see Figure 5 ) in the light-emitting element ED, the electron transport region ETR (see Figures 6 to 9) is a method of using an inorganic metal oxide such as ZnO and ZnMgO in the electron transport region ETR. However, when an inorganic metal oxide such as ZnO and ZnMgO is used in the electron transport region ETR, the electron mobility from the second electrode EL2 to the emission layer EML may become greater than the hole mobility from the first electrode EL1 to the emission layer EML, and therefore, the phenomenon of electrons being excessively injected into the emission layer EML compared to holes may occur. Therefore, the charge balance in the emission layer EML may be destroyed, and therefore the luminous efficiency of the light emitting element ED may decrease. In some embodiments, the over-injected electrons may accumulate in the emission layer EML and the interlayer interface adjacent to the emission layer EML, which causes degradation of the interface and leads to a reduction in the life of the light emitting element ED. In some embodiments, when a composition is manufactured using a zinc (Zn)-based metal oxide (such as ZnO and ZnMgO), gelation and / or particle aggregation may occur due to the low dispersion stability of ZnO and ZnMgO, etc. This particle gelation and aggregation phenomenon may cause difficulty in spraying and / or film formation during the manufacturing process of the element.

[0226] According to the present disclosure, when the electron transport composition ICP forming the electron transport region ETR includes inorganic particles MO including zinc (Zn) and a first metal, the stability of the inorganic particles MO can be improved. Because the inorganic particles MO include zinc (Zn) and a first metal having a larger bond dissociation energy than zinc (Zn), the stability of the inorganic particles MO can be improved, and therefore, in addition to forming a substantially uniform thin film, the electrical and optical properties of the light-emitting element can also be improved. As a result, when the electron transport region ETR is formed using the electron transport composition ICP according to an embodiment of the present disclosure, the emission characteristics and element life characteristics of the display device can be improved. In some embodiments, the charge injection balance of the light-emitting element can be improved by controlling or selecting the electron injection characteristics of the inorganic particles MO by adjusting the content of zinc and the first metal included in the inorganic particles MO. For example, the electron injection characteristics of the electron transport region ETR can be controlled or selected by adjusting the content of zinc (Zn) and the first metal in the inorganic particles MO. As a result, the light-emitting element including quantum dots QD1, QD2 and QD3 (see Figure 5 ) of the light emitting element ED, and thus the efficiency can be improved and the accumulation of electrons on the interface etc. can be prevented or reduced. Therefore, the life of the light emitting element can be improved.

[0227] The electron transport composition ICP according to an embodiment of the present disclosure includes a solvent SV. The solvent SV may include a polyethylene glycol portion. The solvent SV may include a polyethylene glycol portion and a first substituent linked to one end of the polyethylene glycol portion. In an embodiment, the first substituent may be an alkyl, cycloalkyl, heterocycloalkyl, silyl, aryl or heteroaryl group. The electron transport composition ICP includes a solvent SV comprising a polyethylene glycol portion and a first substituent, and thus the dispersion stability of the inorganic particles MO can be improved. Therefore, the solution processability can be improved. In some embodiments, as used herein, the first substituent may refer to R in Formula 2 to be described later. 3 The corresponding substituents.

[0228] In an embodiment, the solvent SV may be represented by Formula 2.

[0229] Formula 2

[0230] R 1 -O-(R 2 -O) n -R 3

[0231] Among them, in formula 2, R 1 is a hydrogen atom or a deuterium atom. For example, R 1 It may be a hydrogen atom.

[0232] In formula 2, R 2 is a substituted or unsubstituted alkylene group having 1 to 60 carbon atoms, a substituted or unsubstituted cycloalkylene group having 3 to 10 ring carbon atoms, a substituted or unsubstituted heterocycloalkylene group having 2 to 10 ring carbon atoms, a substituted or unsubstituted arylene group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroarylene group having 2 to 30 ring carbon atoms. For example, R 2 It may be a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms. 2 It may be a substituted or unsubstituted ethylene group or a substituted or unsubstituted isopropylene group.

[0233] In formula 2, R 3 is a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 ring carbon atoms, a substituted or unsubstituted heterocycloalkyl group having 2 to 10 ring carbon atoms, a substituted or unsubstituted silyl group, a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 ring carbon atoms. In an embodiment, R 3It may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted heterocycloalkyl group having 2 to 10 ring carbon atoms, or a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms. 3 It may be substituted or unsubstituted methyl, substituted or unsubstituted ethyl, substituted or unsubstituted n-propyl, substituted or unsubstituted isopropyl, substituted or unsubstituted tert-butyl, substituted or unsubstituted isopentyl, substituted or unsubstituted benzyl, or substituted or unsubstituted tetrahydrofuranyl.

[0234] In Formula 2, n is an integer of 1 to 5. For example, n may be an integer of 1 to 3.

[0235] In an embodiment, the solvent represented by Formula 2 may be represented by any one selected from Formula 3-1 to Formula 3-3.

[0236] Formula 3-1

[0237]

[0238] Formula 3-2

[0239]

[0240] Formula 3-3

[0241]

[0242] Wherein, in Formula 3-1 to Formula 3-3, the same description as in Formula 2 above can be applied to R 1 , R 3 and n.

[0243] In an embodiment, the solvent represented by Formula 2 may be represented by any one selected from Formula 4-1 to Formula 4-8.

[0244] Formula 4-1

[0245]

[0246] Formula 4-2

[0247]

[0248] Formula 4-3

[0249]

[0250] Formula 4-4

[0251]

[0252] Formula 4-5

[0253]

[0254] Formula 4-6

[0255]

[0256] Formula 4-7

[0257]

[0258] Formula 4-8

[0259]

[0260] In an embodiment, the electron transport composition ICP may include about 0.1 wt% to about 5.0 wt% of the inorganic particles MO relative to about 100 wt% of the solvent SV. When the content (e.g., weight percentage) of the inorganic particles MO is less than about 0.1 wt%, the effect of improving the electron injection balance of the light-emitting element may be reduced. When the content (e.g., weight percentage) of the inorganic particles MO exceeds about 5.0 wt%, the dispersion state of the inorganic particles MO becomes unstable, and thus, particle gelation and / or aggregation, etc. may occur in the electron transport composition ICP. As a result, it may be difficult to adjust the thickness uniformity of the film. When the content (e.g., weight percentage) of the inorganic particles MO is within the above range, the inorganic particles MO in the electron transport composition ICP may have excellent or suitable dispersion stability, and thus a substantially uniform film may be formed, and the film formed by the electron transport composition ICP may have excellent or suitable charge mobility.

[0261] In an embodiment, the boiling point of the solvent SV may be about 200° C. or higher. For example, the boiling point of the solvent SV may be about 200° C. to about 500° C. Since the solvent has a high boiling point of about 200° C. or higher, when the electron transport composition ICP is applied and then dried, the occurrence of stains may be reduced, and the occurrence of defects due to mixing of materials at the interface between adjacent layers may be suppressed or reduced.

[0262] In an embodiment, the viscosity of the solvent SV at room temperature (about 25° C.) may be about 30 centipoise (cP or cp) or less. For example, the viscosity of the solvent SV may be about 5 cp to about 20 cp. When the viscosity of the solvent SV is within the above range, the solution processability of the electron transport composition ICP may be improved, and thus the film stability of the light-emitting element may be improved.

[0263] In an embodiment, the surface tension of the solvent SV at room temperature (about 25° C.) may be about 40 dynes per centimeter (40 dyn / cm) or less. For example, the surface tension of the solvent SV may be about 10 dyn / cm to about 34 dyn / cm. When the surface tension of the solvent SV is within the above range, the solution processability of the electron transport composition ICP may be improved, and thus the thin film stability of the light-emitting element may be improved.

[0264] The electron transport composition ICP according to an embodiment of the present disclosure includes a solvent SV represented by Formula 2, which can improve the dispersion stability of the inorganic particles MO in the electron transport composition ICP. In some embodiments, because the solvent SV represented by Formula 2 is used in the electron transport composition ICP including the inorganic particles MO, the surface stability of the inorganic particles MO can be improved, and thus the efficiency characteristics and life characteristics of the light-emitting element can be further improved.

[0265] In an embodiment, the electron transport composition ICP may include an additional solvent in addition to the above-mentioned solvent SV. The additional solvent may be an organic solvent or an inorganic solvent such as water. The organic solvent may include an aprotic solvent or a protic solvent.

[0266] Aprotic solvents may include, for example, hexane, toluene, chloroform, dimethyl sulfoxide, octane, xylene, hexadecane, cyclohexylbenzene, triethylene glycol monobutyl ether, or dimethylformamide, decane, dodecane-1-hexadecene, tetralin, ethylnaphthalene, ethylbiphenyl, isopropylnaphthalene, diisopropylnaphthalene, diisopropylbiphenyl, xylene, isopropylbenzene, pentylbenzene, diisopropylbenzene, decahydronaphthalene, phenylnaphthalene, cyclohexyldecahydronaphthalene, decylbenzene, dodecylbenzene, octylbenzene, cyclohexane, cyclopentane, cycloheptane, etc., but are not limited thereto.

[0267] The protic solvent may be a compound that can provide at least one proton. More specifically, the protic solvent may be a compound that contains at least one dissociable proton. For example, the protic solvent may refer to a protic liquid material or a protic polymer. The protic solvent may include methanol, ethanol, propanol, isopropanol, ethylene glycol, propylene glycol, diethylene glycol, etc., but is not limited thereto.

[0268] In an embodiment, the electron transport composition ICP may further include an additive represented by Formula 5. The additive represented by Formula 5 may be included in the electron transport composition ICP, and thus may be used together with the solvent SV to improve the dispersion stability of the inorganic particles MO. When the electron transport composition ICP includes the solvent SV represented by Formula 1 and the additive represented by Formula 5, the dispersion stability of the inorganic particles MO may be improved, and thus the solution processability may be further improved.

[0269] Formula 5

[0270]

[0271] Among them, in formula 5, R 11 To R 13 and R are each independently a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 ring carbon atoms, a substituted or unsubstituted silyl group, a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 ring carbon atoms. 11 To R 13 It may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms. 11 To R 13 It may be a substituted or unsubstituted methyl group or a substituted or unsubstituted ethyl group.

[0272] In Formula 5, R 14 It may be a substituted or unsubstituted alkylene group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkylene group having 3 to 20 ring carbon atoms, a substituted or unsubstituted arylene group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroarylene group having 2 to 30 ring carbon atoms. 14 The alkylene group may be substituted or unsubstituted and has 1 to 10 carbon atoms.

[0273] In Formula 5, a1 to a3 may each independently be 0 or 1. In an embodiment, at least one selected from a1 to a3 may be 1. For example, at least one selected from a1 to a3 may be 1, and the rest may be 0. In some embodiments, all a1 to a3 may be (each) 1.

[0274] In Formula 5, F 1 It may be a substituted or unsubstituted (meth)acrylate group, a substituted or unsubstituted epoxy group, or a substituted or unsubstituted amine group. 1 The (meth)acrylate group may be substituted or unsubstituted.

[0275] In an embodiment, the additive represented by Formula 5 may be represented by any one selected from Formula 6-1 to Formula 6-5.

[0276] Formula 6-1

[0277]

[0278] Formula 6-2

[0279]

[0280] Formula 6-3

[0281]

[0282] Formula 6-4

[0283]

[0284] Formula 6-5

[0285]

[0286] Fig.13 and Fig.14 2 is a view schematically illustrating some operations for manufacturing a light emitting element according to an embodiment. Fig.13 The method for manufacturing a light emitting element ED (see Figure 6 ) is an operation for providing a preliminary electron transport region (S302). Providing the preliminary electron transport region (S302) may be applying an electron transport composition ICP onto the emission layer EML.

[0287] In an embodiment, a method for applying the electron transport composition ICP to the emission layer EML is not particularly limited, and a method such as spin coating, casting, Langmuir-Blodgett (LB), inkjet printing, laser printing, and / or laser induced thermal imaging (LITI) may be used. Fig.13 In the embodiment, the electron transport composition ICP is applied between the pixel defining layers PDL through the nozzle NZ, but is not limited thereto.

[0288] Fig.14 Schematically shows a method for manufacturing a light emitting element ED (see Figure 6 ) in the method of performing a heat treatment of the preliminary electron transport region P-ETR at a first temperature (S303). Performing a heat treatment of the preliminary electron transport region (S303) may be performing a heat treatment of the preliminary electron transport region P-ETR by providing heat LT at a first temperature for a set or predetermined time.

[0289] Solvent SV (see Fig.12 ) can be removed by performing heat treatment (S303) at a first temperature, and thus, a substantially uniform thin film can be formed. In an embodiment, the first temperature is not particularly limited, and may be about 50° C. to about 150° C. However, the embodiments of the present disclosure are not limited thereto, and the temperature and time for performing the heat treatment at the first temperature may be appropriately selected depending on the type (kind) and amount of the material.

[0290] In some embodiments, Fig.13 and Fig.14The hole transport region HTR and the electron transport region ETR are shown (see Figures 6 to 9 ) are each provided between the pixel defining films PDL, but the embodiments of the present disclosure are not limited thereto. The hole transport region HTR and the electron transport region ETR may each be provided as a common layer to overlap with the pixel defining film PDL.

[0291] Most inorganic metal oxides have many defects (such as metal vacancies, oxygen vacancies, and surface defects), and due to these defects, defective energy levels may be formed. There are the following disadvantages: defective energy levels may cause charge loss in the light-emitting element and may affect the emission quenching characteristics of the emission layer including quantum dots, and thus may reduce the efficiency characteristics and life characteristics of the light-emitting element. In some embodiments, there are the following disadvantages: the atomic bonding in the inorganic metal oxide is weak, and therefore the characteristics vary dramatically according to the driving of the light-emitting element. In some embodiments, when ink is manufactured by nanoparticles used to manufacture light-emitting elements, there are the following disadvantages: gelation or aggregation of particles may occur due to exposure to oxygen and moisture, and / or aggregation may be induced due to the short distance between particles. The phenomenon of gelation and aggregation may cause defects such as jetting and / or film formation during the preparation process of the panel.

[0292] According to the present disclosure, because the electron transport composition ICP forming the electron transport region ETR includes an inorganic particle MO including zinc (Zn) and a first metal, the stability of the inorganic particle MO can be improved. The inorganic particle MO includes zinc (Zn) and a first metal having a higher bond dissociation energy than zinc (Zn), so the stability of the inorganic particle MO can be improved, and therefore in addition to forming a substantially uniform film, the electrical and optical properties of the light-emitting element can also be improved. As a result, when the electron transport region ETR is formed using the electron transport composition ICP according to an embodiment of the present disclosure, the display device can have improved emission characteristics and element life characteristics. In some embodiments, the electron injection characteristics of the inorganic particle MO can be controlled or selected by adjusting the content of zinc (Zn) and the first metal included in the inorganic particle MO, and thus the charge injection balance of the light-emitting element can be improved. Therefore, when the electron transport region ETR is formed by applying the electron transport composition ICP according to the embodiment, the current density in the element can be increased, and thus the luminous efficiency and life of the display device can be improved in the end.

[0293] Hereinafter, an electron transport composition according to an embodiment of the present disclosure and a light emitting element according to an embodiment will be specifically described with reference to examples and comparative examples. In some embodiments, the examples shown are only for understanding the present disclosure, and the scope of the present disclosure is not limited thereto.

[0294] Example

[0295] 1. Synthesis of Inorganic Particles

[0296] Synthesis Example 1: Zn 0.9 Sn 2+ 0.1 Inorganic particles

[0297] About 72 mmol of zinc acetate dihydrate, about 8 mmol of tin (II) acetate and about 320 mL of dimethyl sulfoxide were injected into the reactor and the mixture was then stirred for about 120 minutes. Then, the temperature of the reactor was set to about 30° C., and then about 80 mL of a mixed solution of 1M tetramethylammonium hydroxide (TMAH) pentahydrate and ethanol was injected for about 20 minutes. After the injection of the TMAH solution was completed, the reaction was maintained for about 2 hours, and then the synthesized Zn was deposited using acetone and hexane. 0.9 Sn 2+ 0.1 O inorganic particles, and then dispersed them into the ink.

[0298] Synthesis Example 2: Zn 0.8 Sn 2+ 0.2 Inorganic particles

[0299] About 64 mmol of zinc acetate dihydrate, about 16 mmol of tin (II) acetate and about 320 mL of dimethyl sulfoxide were injected into the reactor and the mixture was then stirred for about 120 minutes. Then, the temperature of the reactor was set to about 30° C., and then about 80 mL of a mixed solution of 1M tetramethylammonium hydroxide (TMAH) pentahydrate and ethanol was injected for about 20 minutes. After the injection of the TMAH solution was completed, the reaction was maintained for about 2 hours, and then the synthesized Zn was deposited using acetone and hexane. 0.8 Sn 2+ 0.2 O inorganic particles, and then dispersed them into the ink.

[0300] Synthesis Example 3: ZnO Inorganic Particles

[0301] About 80 mmol of zinc acetate dihydrate and about 320 mL of dimethyl sulfoxide were injected into the reactor and the mixture was then stirred for about 120 minutes. Then, the temperature of the reactor was lowered to about 4°C, and then about 80 mL of a mixed solution of 1M tetramethylammonium hydroxide (TMAH) pentahydrate and ethanol was injected for about 20 minutes. After the injection of the TMAH solution was completed, the reaction was maintained for about 1 hour and 20 minutes, and then the synthesized ZnO nanoparticles were deposited using acetone and hexane, and then dispersed into the ink.

[0302] Synthesis Example 4: ZnMgO Inorganic Particles

[0303] About 65.2 mmol of zinc acetate dihydrate and about 14.8 mmol of magnesium acetate tetrahydrate are dissolved in about 320 mL of dimethyl sulfoxide (DMSO), and then the temperature of the reactor is lowered to about 4° C., and then about 80 mL of a mixed solution of 1M tetramethylammonium hydroxide (TMAH) pentahydrate and ethanol is injected for about 20 minutes. After the injection of the TMAH solution is completed, the reaction is maintained for about 1 hour and 20 minutes, and then the synthesized ZnO nanoparticles are deposited using acetone and hexane, and then dispersed into the ink.

[0304] Evaluation of solvent properties

[0305] The boiling point (bp), viscosity and surface tension of the solvents represented by Compound 4-1 to Compound 4-8 were measured, and the measurement results are listed in Table 2. Here, the viscosity was measured using a viscometer DV-2+ manufactured by Brookfield Viscometers Ltd, and the surface tension was measured using DST-60 manufactured by SEO Co., Ltd.

[0306] Table 2

[0307]

[0308]

[0309] Compound 4-1

[0310]

[0311] Compound 4-2

[0312]

[0313] Compound 4-3

[0314]

[0315] Compound 4-4

[0316]

[0317] Compound 4-5

[0318]

[0319] Compound 4-6

[0320]

[0321] Compound 4-7

[0322]

[0323] Compound 4-8

[0324]

[0325] Preparation of electron transport compositions

[0326] As shown in Table 3, electron transport compositions 1 to 5 (in Table 3, simply referred to as Compositions 1 to 5) and Comparative Compositions 1 to 5 including inorganic particles, a solvent, and an additive were manufactured.

[0327] Table 3

[0328]

[0329] Compound 6-1

[0330]

[0331] Evaluation of Electron Transport Compositions 1

[0332] After standing at room temperature for 1 week and 2 weeks, the particle size of each of the electron transport compositions (each in the form of particles) was measured, and the results are listed in Table 4. In Table 4, the particle size was measured using a DLS instrument (Nano-ZS90 manufactured by Malvern Panalytical Ltd). Since the difference between the initial average particle size and the average particle size after 1 week and the difference between the initial average particle size and the average particle size after 2 weeks are small, the dispersion stability of the inorganic particles to the solvent is excellent or appropriate.

[0333] Table 4

[0334]

[0335] With reference to Table 4 above, it can be confirmed that, compared to the compositions according to Comparative Examples 1-1 and 1-2, the compositions according to Examples 1-1 to 1-5 and Comparative Example 1-1 each have a smaller initial average particle size and a difference between the average particle size after 1 week. In some embodiments, it can be seen that, in the case of the compositions according to Examples 1-1 to 1-5 and Comparative Example 1-1, even after 2 weeks, the average particle size does not have a significant change in the average particle size. On the contrary, it can be confirmed that the compositions according to Comparative Examples 1-2 to Comparative Examples 1-5 have an excessively large average particle size after two weeks, making it impossible to measure. Therefore, it can be confirmed that Compositions 1 to 5 and Comparative Composition 1, each of which includes inorganic particles containing zinc (Zn) and a first metal, have excellent or suitable dispersibility of inorganic particles. In some embodiments, when the composition according to Example 1-1 is compared with the composition according to Example 1-2 to Example 1-5, it can be confirmed that the electronic composition according to Example 1-2 to Example 1-5 including the additive has a smaller difference between the average particle size after 1 week and the average particle size after 2 weeks than the composition according to Example 1-1 not including the additive. Therefore, in the case of the electron transport composition including the additive, the dispersion stability of the inorganic particles can be improved, and thus the solution processability can be expected to be further improved.

[0336] Evaluation of Electron Transport Compositions 2

[0337] Each of the electron transport compositions was jetted from an inkjet device, and then the jetting was measured after about 24 hours, and the results are listed in Table 5. The jetting standard was about ±20 μm of deposition accuracy, and a Dimatix material printer DMP-2850 was used as the inkjet device.

[0338] Table 5

[0339]

[0340] Referring to Table 5 above, it can be confirmed that the compositions according to Examples 1-1 to 1-5 and Comparative Example 1-1 maintain good or suitable spraying even after being left for about 24 hours, compared with the compositions according to Comparative Examples 1-2 to 1-5. Therefore, it can be confirmed that Compositions 1 to 5 and Comparative Composition 1 include inorganic particles containing zinc (Zn) and the first metal, and thus have improved storage stability and spraying.

[0341] Example 2-1 Manufacturing

[0342] An ITO glass substrate (50 nm×50 nm, 15 Ω / cm2) as glass for EL-QD (product of Samsung-Corning) was quenched with pure water and isopropyl alcohol. 2 ) were sequentially ultrasonically cleaned, and then ultraviolet (UV) ozone cleaning was performed for about 30 minutes. After cleaning, PEDOT:PSS (CleviosTM HIL8) was spin-coated on a glass substrate to which a transparent electrode wiring was attached to form a film having a thickness of about 60nm, and then baked at about 120°C for about 10 minutes to form a hole injection layer. Compound 101 was spin-coated on the hole injection layer to form a film having a thickness of about 20nm, and then baked at about 120°C for about 10 minutes to form a hole transport layer. Red InP quantum dots (QDs) were spin-coated on the hole transport layer to form a film having a thickness of about 20nm, and then baked at about 100°C for about 10 minutes to form a red emission layer. Inorganic nanoparticles of composition 1 were spin-coated on the red emission layer to form a film having a thickness of about 30nm, and then baked at about 120°C for about 10 minutes to form an electron transport layer. The glass substrate was mounted on a substrate holder of a vacuum deposition apparatus, and Al was then deposited on the electron transport layer to form an anode having a thickness of about 100 nm, thereby preparing a quantum dot light emitting element. The apparatus used for deposition was a Sunicel plus 200 evaporation apparatus manufactured by Sunic System.

[0343] PEDOT:PSS

[0344]

[0345] Compound 101

[0346]

[0347] Fabrication of Light-Emitting Elements According to Examples 2-2 to 2-5 and Comparative Examples 2-1 to 2-5

[0348] Except that the electron transport layer was configured as listed in Table 6, a light-emitting element was prepared in substantially the same manner as in Example 2-1.

[0349] Table 6

[0350]

[0351]

[0352] Evaluation of light-emitting components

[0353] The driving voltage, efficiency, and color coordinates of the quantum dot light emitting elements prepared according to Examples 2-1 to 2-5 and Comparative Examples 2-1 to 2-5 were measured using various methods, and the measurement results are listed in Table 7.

[0354] - Color coordinates: Power was supplied from a current-voltage meter (Keithley SMU 236) and the color coordinates were measured using a luminance meter PR650.

[0355] - Driving voltage: Power was supplied from a current-voltage meter (Keithley SMU 236), and brightness was measured using a brightness meter PR650.

[0356] - Luminous Efficiency: Power was supplied from a current-voltage meter (Keithley SMU 236) and the efficiency was measured using a luminance meter PR650.

[0357] In some embodiments, T90 lifetime refers to the time it takes for the brightness to drop from about 100% to the initial brightness (about 10 mA / cm 2 The time (hr) required to achieve approximately 90% of the total time required to achieve

[0358] Table 7

[0359]

[0360]

[0361] refer to Figure 7 , it can be seen that the light-emitting elements according to Examples 2-1 to 2-5 have improved luminous efficiency characteristics and life characteristics compared with Comparative Examples 2-1 to 2-5. Referring to Tables 4, 5, and 7 above, the light-emitting element according to Comparative Example 2-1 using Comparative Composition 1 has improved dispersion stability and ejection stability because of the use of inorganic particles containing zinc (Zn) and the first metal. However, because the element ratio of the first metal in the inorganic particles is about 0.2 or higher, the electron mobility of the inorganic particles is excessively reduced, and therefore the charge balance in the emission layer is destroyed. Therefore, compared with the light-emitting elements according to Examples 2-1 to 2-5, the luminous efficiency and element life are reduced. On the contrary, it can be confirmed that the light-emitting elements according to Examples 2-1 to 2-5 using Compositions 1 to 5 respectively have excellent or suitable luminous efficiency and improved element life characteristics, while showing excellent or suitable dispersion stability and ejection stability.

[0362] In the present disclosure, the electron transport composition ICP forming the electron transport region includes inorganic particles MO represented by Formula 1 (see Fig.12 ) and a solvent SV represented by Formula 2 (see Fig.12), and thus the metal oxide can have improved dispersion stability. Therefore, in addition to forming a substantially uniform thin film, the charge balance of the element can also be adjusted by electron injection control. As a result, when an electron transport region is formed using the electron transport composition ICP according to an embodiment of the present disclosure, the display device can have improved emission characteristics and element life characteristics.

[0363] Embodiments may provide an electron transport composition having improved dispersion stability and a light emitting element having improved luminous efficiency characteristics and lifespan characteristics.

[0364] Embodiments may provide a method for manufacturing a light emitting element having improved processability during a formation process of an electron transport region.

[0365] In the present disclosure, unless the context clearly indicates otherwise, singular expressions may include plural expressions. It will be further understood that when used in the present disclosure, the terms "include", "comprise" or "have" indicate the presence of stated features, integral bodies, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integral bodies, steps, operations, elements, components and / or their groups. The " / " used herein may be interpreted as "and" or "or" depending on the circumstances.

[0366] Throughout this disclosure, when it is mentioned that a component such as a layer, film, region, or plate is placed "on" another component, it will be understood that the component can be directly on the other component or another component can be interposed therebetween. In some embodiments, "directly on..." can mean that there are no additional layers, films, regions, plates, etc. between a layer, film, region, plate, etc. and another layer, film, region, plate, etc. For example, "directly on..." can mean that two layers or two members are disposed without using an additional layer or additional member such as an adhesive layer or adhesive member therebetween.

[0367] In the present disclosure, although the terms "first", "second", etc. may be used herein to describe one or more elements, components, regions and / or layers, these elements, components, regions and / or layers should not be limited by these terms. These terms are only used to distinguish one component from another component.

[0368] Unless the context clearly indicates otherwise, as used herein, the singular forms "a", "an", "an(er)", and "the" are intended to include the plural forms as well. In addition, when describing embodiments of the present disclosure, the use of "may" refers to "one or more embodiments of the present disclosure".

[0369] In the present disclosure, when a particle (e.g., a quantum dot particle or a quantum dot) is spherical, "size" indicates a particle diameter or an average particle diameter; and when a particle is non-spherical, "size" indicates a major axis length or an average major axis length. The diameter (or size) of a particle can be measured using a scanning electron microscope or a particle size analyzer. As a particle size analyzer, for example, a HORIBA, LA-950 laser particle size analyzer can be used. When the size of a particle is measured using a particle size analyzer, the average particle diameter (or size) is referred to as D50. D50 refers to the average diameter (or size) of particles whose cumulative volume corresponds to 50 vol% in a particle size distribution (e.g., cumulative distribution), and refers to a value of a particle size corresponding to 50% starting from the smallest particle when the total number of particles is 100% in a distribution curve accumulated in the order of the smallest particle size to the largest particle size.

[0370] As used herein, the terms "substantially," "approximately," or similar terms are used as terms of approximation rather than terms of degree, and are intended to account for inherent deviations in measured or calculated values ​​that would be recognized by one of ordinary skill in the art. Taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system), "approximately" as used herein includes the stated value and means within an acceptable range of deviations for a particular value as determined by one of ordinary skill in the art. For example, "approximately" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0371] In the present disclosure, "not including one or any "ingredient"", "excluding one or any "ingredient"" and / or "not containing..."an "ingredient"", etc. means that the "ingredient" is not added, selected or used as an ingredient in the compound / composition, but due to other impurities and / or external factors in the composition, less than the appropriate amount of the "ingredient" may still be included.

[0372] Any numerical range listed herein is intended to include all subranges of the same numerical precision included in the listed range. For example, the range of "1.0 to 10.0" is intended to include all subranges between the minimum value of 1.0 listed and the maximum value of 10.0 listed (and including the minimum value of 1.0 listed and the maximum value of 10.0 listed), that is, all subranges with a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as 2.4 to 7.6. Any maximum numerical limit listed herein is intended to include all lower numerical limits included therein, and any minimum numerical limit listed in this specification is intended to include all higher numerical limits included therein. Therefore, the applicant reserves the right to modify this specification (including claims) to explicitly list any subranges included in the range explicitly listed herein.

[0373] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression "at least one of a to c", "at least one of a, b and c", "at least one of a to c" indicates only a, only b, only c, both a and b (e.g., a and b simultaneously), both a and c (e.g., a and c simultaneously), both b and c (e.g., b and c simultaneously), all of a, b and c, or variations thereof.

[0374] In this specification, “including A or B”, “A and / or B”, etc. means A or B or A and B.

[0375] The light-emitting device, display device, electronic device, electronic equipment or any other related device or component according to the embodiment of the present disclosure described herein can be implemented using any suitable hardware, firmware (such as a dedicated integrated circuit), software or a combination of software, firmware and hardware. For example, the various components of the device can be formed in an integrated circuit (IC) chip, or can be formed in a separate IC chip. In addition, the various components of the device can be implemented on a flexible printed circuit film, a carrier package (TCP), a printed circuit board (PCB), or can be formed on a substrate. In addition, the various components of the device can be processes or threads running on one or more processors in one or more computing devices, executing computer program instructions and interacting with other system components to perform various functions described herein. The computer program instructions are stored in a memory, which can be implemented in a computing device using a standard memory device (such as, for example, a random access memory (RAM)). The computer program instructions can also be stored in other non-temporary computer-readable media (such as, for example, a compact disc read-only memory (CD-ROM) or a flash drive, etc.). In addition, those skilled in the art will recognize that the functionality of various computing devices may be combined or integrated into a single computing device, or the functionality of a particular computing device may be distributed across one or more other computing devices without departing from the scope of the embodiments of the present disclosure.

[0376] Although the present disclosure has been described with reference to the preferred embodiments of the present disclosure, it will be understood that the present disclosure should not be limited to these preferred embodiments, but those skilled in the art may make one or more suitable changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the technical scope of the present disclosure is not intended to be limited to the contents set forth in the detailed description of this specification, but is intended to be defined by the attached claims and their equivalents.

Claims

1. An electron transport composition, wherein: The electron transport composition comprises: Inorganic particles represented by Formula 1; and The solvent is represented by Formula 2: Formula 1 Zn 1-x M x O Among them, in formula 1, M is Sn, Cu or Ni, and x satisfies 0<x<1, Formula 2 R1-O-(R2-O) n -R3 Among them, in formula 2, R1 is a hydrogen atom or a deuterium atom, R2 is a substituted or unsubstituted alkylene group having 1 to 60 carbon atoms, a substituted or unsubstituted cycloalkylene group having 3 to 10 ring carbon atoms, a substituted or unsubstituted heterocycloalkylene group having 2 to 10 ring carbon atoms, a substituted or unsubstituted arylene group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroarylene group having 2 to 30 ring carbon atoms, R3 is a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 ring carbon atoms, a substituted or unsubstituted heterocycloalkyl group having 2 to 10 ring carbon atoms, a substituted or unsubstituted silyl group, a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 ring carbon atoms, and n is an integer of 1-5.

2. The electron transport composition according to claim 1, wherein M is Sn.

3. The electron transport composition according to claim 1, wherein x satisfies 0<x<0.

2.

4. The electron transport composition according to claim 1, wherein The solvent represented by Formula 2 is represented by any one selected from Formula 3-1 to Formula 3-3: Formula 3-1 Formula 3-2 Formula 3-3 Among them, in Formula 3-1 to Formula 3-3, R1, R3 and n are the same as defined in Formula 2.

5. The electron transport composition according to claim 1, wherein The boiling point of the solvent is 200° C. or higher.

6. The electron transport composition according to claim 1, wherein The viscosity of the solvent is 30 centipoise or less, and the surface tension of the solvent is 40 dynes per centimeter or less.

7. The electron transport composition according to claim 1, wherein The viscosity of the solvent is 20 centipoise or less, and the surface tension of the solvent is 34 dynes per centimeter or less.

8. The electron transport composition according to claim 1, wherein The solvent represented by Formula 2 is represented by any one selected from Formula 4-1 to Formula 4-8: Formula 4-1 Formula 4-2 Formula 4-3 Formula 4-4 Formula 4-5 Formula 4-6 Formula 4-7 Formula 4-8 9. The electron transport composition according to claim 1, wherein The electron transport composition further includes an additive represented by Formula 5: Formula 5 Among them, in formula 5, R 11 To R 13 each independently represents a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 ring carbon atoms, a substituted or unsubstituted silyl group, a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 ring carbon atoms, R 14 is a substituted or unsubstituted alkylene group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkylene group having 3 to 20 ring carbon atoms, a substituted or unsubstituted arylene group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroarylene group having 2 to 30 ring carbon atoms, a1 to a3 are each independently 0 or 1, At least one selected from a1 to a3 is 1, and F1 is a substituted or unsubstituted acrylate group or methacrylate group, a substituted or unsubstituted epoxy group, or a substituted or unsubstituted amine group.

10. The electron transport composition according to claim 9, wherein The additive represented by Formula 5 is represented by any one selected from Formula 6-1 to Formula 6-5: Formula 6-1 Formula 6-2 Formula 6-3 Formula 6-4 Formula 6-5 11. The electron transport composition according to claim 1, wherein The electron transport composition includes 0.1 wt % to 5.0 wt % of the inorganic particles relative to 100 wt % of the solvent.

12. A method for manufacturing a light emitting element, wherein: The method comprises: applying a hole transport region on the first electrode; applying an emissive layer over the hole transport region; applying an electron transport region on the emissive layer; and applying a second electrode on the electron transport region, Wherein, the applying of the electron transport region comprises: preparing the electron transport composition according to any one of claims 1 to 11; applying a preliminary electron transport region by applying the electron transport composition to the emissive layer; and The heat treatment of the preliminary electron transport region is performed at a first temperature.

13. The method according to claim 12, wherein: The first temperature is 50°C to 150°C.

14. A light emitting element, wherein: The light emitting element comprises: a first electrode; a hole transport region on the first electrode; an emission layer on the hole transport region; an electron transport region on the emissive layer; and a second electrode, on the electron transport region, Wherein, the electron transport region includes inorganic particles represented by Formula 1: Formula 1 Zn 1-x M x O Among them, in formula 1, M is Sn, Cu or Ni, and x satisfies 0<x<0.

2.

15. The light emitting element according to claim 14, wherein The emitting layer includes quantum dots.

16. The light emitting element according to claim 15, wherein Each of the quantum dots includes a core and a shell around the core.

17. The light emitting element according to claim 14, wherein M is Sn.

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