A full-color gate-controlled light-emitting device with shared gate voltage

Abstract

This invention discloses a full-color gate-controlled light-emitting device with a shared gate voltage, comprising: multiple light-emitting units arranged in rows and columns, each light-emitting unit including an anode, a light-emitting functional layer, and a cathode, and the light-emitting units are divided into red light-emitting units, green light-emitting units, and blue light-emitting units; a gate insulating layer is disposed on the anode and / or cathode side of the light-emitting unit, and a gate control electrode is disposed on the gate insulating layer, the thickness of the gate insulating layer corresponding to the red light-emitting unit, green light-emitting unit, and blue light-emitting unit decreasing sequentially; the anode of the light-emitting unit is connected to the drain of a thin-film transistor switch, the drain of the thin-film transistor switch is also connected to the gate of an amplifying field-effect transistor, the drain of the amplifying field-effect transistor is connected to the gate control electrode, and the source of the amplifying field-effect transistor is connected to a first control voltage source. This invention simplifies the gate control structure and ensures that the gate voltage control of each light-emitting unit is independent.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of optoelectronic display, in particular to a full-color gate-regulated light-emitting device sharing gate voltage. BACKGROUND

[0002] Light-emitting devices in optoelectronic display are important components of display devices, which present images or information through light emission. The light-emitting principle of many light-emitting devices is based on the combination of electrons and holes to form excitons in the light-emitting layer after being electrified, and the excitons release energy and emit light when they recombine. For example, QLED (quantum dot light-emitting diode), OLED (organic light-emitting diode), etc. These light-emitting devices have the advantages of rich color expression, high contrast, fast response speed, wide viewing angle, energy saving and environmental protection, etc. The light-emitting efficiency or brightness of these light-emitting devices is greatly affected by the carrier recombination process, and different functional layers and quantum dots are usually used to obtain optimal device efficiency. This experimental process requires a large amount of time, materials and labor cost. Therefore, gate regulation appears, which can build an internal electric field in these light-emitting devices through gate regulation, realize the regulation of carrier mobility, realize the regulation of light-emitting efficiency, and help to improve the light-emitting efficiency.

[0003] The existing light-emitting device integration device generally regulates the gate one by one, that is, one regulating voltage only regulates one light-emitting diode. However, when a large number of light-emitting diodes are integrated in the same device, the gate regulation circuit integration becomes bulky and complex, which not only wastes resources but also makes the gate regulation more complicated. SUMMARY

[0004] The applicant found that light-emitting diodes of the same color require similar regulating gate voltage, so that light-emitting diodes of the same color can share the same regulating gate voltage, which can effectively reduce the regulating gate voltage source. However, it cannot be reduced to one, and once the same regulating gate voltage is shared, it cannot be adjusted adaptively according to the change of individual gray scale value. Therefore, there is a conflict between reducing the number of gate voltage sources and precise regulation.

[0005] In view of the above part of the defects of the prior art, the technical problem to be solved by the present application is to provide a full-color gate-regulated light-emitting device sharing gate voltage, which aims to simplify the gate regulation structure and ensure the independence of the gate voltage regulation of each light-emitting unit.

[0006] To achieve the above object, the application discloses a full-color gate-regulated light-emitting device with a common gate voltage, which comprises a plurality of light-emitting units arranged in rows and columns, wherein the light-emitting unit comprises an anode, a light-emitting functional layer and a cathode, and the light-emitting unit is divided into a red light-emitting unit, a green light-emitting unit and a blue light-emitting unit according to the light-emitting color of the light-emitting functional layer; a gate insulating layer is arranged on the side of the anode and / or the cathode of the light-emitting unit, a gate-regulated electrode is arranged on the gate insulating layer, and the thickness of the gate insulating layer corresponding to the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit decreases in turn; each light-emitting unit corresponds to a thin film transistor switch and an amplification field effect transistor, the anode of the light-emitting unit is connected to the drain of the thin film transistor switch, the source of the thin film transistor switch is connected to a data lead wire for controlling the brightness of the light-emitting unit, the gate of the thin film transistor switch is connected to a scanning lead wire for controlling the gating of the thin film transistor switch, the drain of the thin film transistor switch is also connected to the gate of the amplification field effect transistor, the drain of the amplification field effect transistor is connected to the gate-regulated electrode, and the source of the amplification field effect transistor is connected to a first regulating voltage source; wherein the initial light-emitting efficiency of the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit decreases in turn.

[0007] When the full-color gate-regulated light-emitting device is subjected to gate regulation, the first regulating voltage source applies a first potential to make the source input voltage of each amplification field effect transistor the same, and the driving voltage generated by the data lead wire changes the carrier concentration and conductivity in the channel of the amplification field effect transistor, thereby controlling the drain current size of the amplification field effect transistor, and further making the regulating gate voltage of the gate-regulated electrode adapt to the gray scale value corresponding to the driving voltage; different thicknesses of the gate insulating layer make the regulating gate voltage construct different intensity electric fields to regulate the mobility of carriers in the light-emitting unit and adjust the light-emitting efficiency of the light-emitting unit; wherein the smaller the thickness of the gate insulating layer, the greater the intensity of the electric field constructed, and the greater the light-emitting efficiency improved.

[0008] Optionally, when the initial light-emitting efficiency of the red light-emitting unit, the blue light-emitting unit and the green light-emitting unit decreases in turn, the thickness of the gate insulating layer corresponding to the red light-emitting unit, the blue light-emitting unit and the green light-emitting unit decreases in turn.

[0009] Optionally, the drain of the thin film transistor switch is also connected to an energy storage capacitor, which is used to charge when the data lead wire is driven and discharge when the driving is finished, so that the light-emitting unit originally emits light continues to emit light, thereby prolonging the light-emitting time.

[0010] Optionally, the adjacent red light emitting unit, the green light emitting unit and the blue light emitting unit constitute a light emitting pixel, and the light emitting pixel presents a required color according to brightness of the red light emitting unit, the green light emitting unit and the blue light emitting unit.

[0011] Optionally, one end of the gate control electrode is connected to the drain of the amplification field effect transistor, and the other end of the gate control electrode is grounded.

[0012] Optionally, the light emitting unit is a quantum dot light emitting diode, and the light emitting functional layer comprises a hole transport layer, a quantum dot light emitting layer and an electron transport layer.

[0013] Optionally, the light emitting unit is an organic light emitting diode, and the light emitting functional layer comprises a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer and an electron injection layer.

[0014] Optionally, the gate insulating layer is arranged on the anode and / or the cathode according to the type of carrier in the light emitting functional layer, and the gate control electrode is arranged on the gate insulating layer.

[0015] Optionally, the thin film transistor switch and the amplification field effect transistor each comprise a source, a gate, a drain, an active layer and an insulating layer.

[0016] The present application has the following advantages: 1. According to the light emitting efficiency required to be improved by different color light emitting units, different thicknesses of the gate insulating layer are set. The different thicknesses of the gate insulating layer can make the same control gate voltage construct different intensity electric fields to control the mobility of the carriers in the corresponding light emitting unit and adjust the light emitting efficiency of the light emitting unit. When the initial light emitting efficiency of the light emitting unit is lower and the light emitting efficiency required to be improved is greater, a thinner thickness of the gate insulating layer can be set to construct an electric field with greater intensity to control the mobility of the carriers in the corresponding light emitting unit, thereby achieving greater improvement of the light emitting efficiency. In the present application, the light emitting efficiency required to be improved by the red, green and blue light emitting units increases in turn, and the thickness of the corresponding gate insulating layer decreases in turn, so that the actual light emitting efficiency improved by the red, green and blue light emitting units increases in turn to meet the requirements. 2. The drain of the thin film transistor switch is also connected to the gate of the amplification field effect transistor, and the drain of the amplification field effect transistor is connected to the gate control electrode. The driving voltage generated by the data lead changes the carrier concentration and conductivity in the channel of the amplification field effect transistor, thereby controlling the drain current of the amplification field effect transistor and making the control gate voltage of the gate control electrode adapt to the gray scale value corresponding to the driving voltage. The present application further adjusts each gate voltage through the driving voltage, thereby achieving adaptive gate voltage adjustment according to the change of the individual gray scale value, making the gate voltage control more accurate and saving energy.

[0017] In conclusion, the present application simplifies the grid control structure, and ensures the independence of the grid voltage control of each light emitting unit, so that the light emitting device structure is simplified while effectively avoiding energy waste. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a specific structure schematic diagram of a full-color grid control light emitting device sharing a grid voltage provided by a specific embodiment of the present application;

[0019] Figure 2 is a circuit connection structure schematic diagram of a full-color grid control light emitting device sharing a grid voltage provided by a specific embodiment of the present application;

[0020] Figure 3 is a structure schematic diagram of a light emitting unit provided by a specific embodiment of the present application;

[0021] Figure 4 is a circuit connection structure schematic diagram of a full-color grid control light emitting device sharing a grid voltage provided by another specific embodiment of the present application;

[0022] Figure 5 is a part of a connection overhead structure schematic diagram of a full-color grid control light emitting device sharing a grid voltage provided by a specific embodiment of the present application. DETAILED DESCRIPTION

[0023] The present application discloses a full-color grid control light emitting device driving method sharing a grid voltage, and those skilled in the art can refer to the content herein to improve technical details as appropriate. In particular, it should be pointed out that all similar substitutions and changes are obvious to those skilled in the art, and they are considered to be included in the present application. The method and application of the present application have been described by the preferred embodiments, and relevant personnel can obviously modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of the present application, to realize and apply the present application technology.

[0024] After the applicant's research: existing light emitting device integration equipment generally controls the grid by one-to-one, that is, one control voltage only controls one light emitting diode. However, when the number of light emitting diodes is large and integrated in the same device, the grid control circuit integration becomes bloated and complex, causing resource waste and making grid control more cumbersome. Since light emitting diodes of the same color require similar control grid voltage, light emitting diodes of the same color can share the same control grid voltage, which can effectively reduce the control grid voltage source. However, it cannot be reduced to one, and once the same control grid voltage is shared, it cannot be adjusted adaptively according to the individual gray scale value change. Therefore, there is a conflict between reducing the number of grid voltage sources and precise control.

[0025] Therefore, the embodiment of the present application provides a full-color gate-regulated light-emitting device sharing a gate voltage, such as Figures 1 to 5 As shown in the figure, the full-color gate-regulated light-emitting device includes a plurality of light-emitting units 101 arranged in rows and columns, the light-emitting unit 101 includes an anode 102, a light-emitting functional layer 103, and a cathode 104, and the light-emitting unit 101 is divided into red light-emitting units, green light-emitting units, and blue light-emitting units according to the light-emitting color of the light-emitting functional layer 103; a gate insulating layer 105 is arranged on the side of the anode 102 and / or the cathode 104 of the light-emitting unit 101, a gate-regulated electrode 106 is arranged on the gate insulating layer 105, the thickness of the gate insulating layer 105 corresponding to the red light-emitting units, the green light-emitting units, and the blue light-emitting units decreases in turn; each light-emitting unit 101 corresponds to a thin-film transistor switch 107 and an amplification field effect transistor 108, the anode 102 of the light-emitting unit 101 is connected to the drain of the thin-film transistor switch 107, the source of the thin-film transistor switch 107 is connected to a data lead 109 for controlling the brightness of the light-emitting unit 101, the gate of the thin-film transistor switch 107 is connected to a scanning lead 110 for controlling the selection of the thin-film transistor switch 107, the drain of the thin-film transistor switch 107 is also connected to the gate of the amplification field effect transistor 108, the drain of the amplification field effect transistor 108 is connected to the gate-regulated electrode 106, and the source of the amplification field effect transistor 108 is connected to a first regulating voltage source 111.

[0026] Among them, the initial light-emitting efficiency of the red light-emitting units, the green light-emitting units, and the blue light-emitting units decreases in turn.

[0027] Figure 1 It is a structure schematic diagram of a red-green-blue three-color light-emitting device in the full-color gate-regulated light-emitting device sharing a gate voltage of the embodiment of the present application, the drain of the thin-film transistor switch 107 is connected to the anode 102 through a metal lead, and the anode 102 is connected to the gate of the amplification field effect transistor 108 through a metal lead, because they are all connected to the anode 102, the drain of the thin-film transistor switch 107 is connected to the gate of the amplification field effect transistor 108, and the drain of the amplification field effect transistor 108 is connected to the gate-regulated electrode 106 through a metal lead. Figure 2 It is a circuit connection structure schematic diagram of a light-emitting pixel. Figure 4 Then it is a circuit connection structure schematic diagram of two light-emitting pixels, Figure 4 It is illustrated that a plurality of light-emitting pixels can also be connected to the same regulating voltage source. A light-emitting pixel includes a group of red light-emitting units, green light-emitting units, and blue light-emitting units. Figures 1 to 5 In the figure, S, G, and D are the abbreviations of the source (Source), the gate (Gate), and the drain (Drain) of the thin-film transistor switch 107 and the amplification field effect transistor 108. The gate of the thin-film transistor switch 107 and the amplification field effect transistor 108 is not the gate-regulated electrode 106.

[0028] Figure 5 In the diagram, 501 is the insulating layer of the amplifying field-effect transistor 108, 502 is the active layer of the amplifying field-effect transistor 108, 503 is the first metal electrode lead, 504 is the second metal electrode lead, and 505 is a via. The drain of the amplifying field-effect transistor 108 is connected to the gate control electrode 106 through the first metal electrode lead 503, and the anode 102 is connected to the gate of the amplifying field-effect transistor 108 through the second metal electrode lead 504 into the via 505.

[0029] When the full-color gate-controlled light-emitting device performs gate control, the first control voltage source 111 applies a first potential to make the source input voltage of each amplifying field-effect transistor 108 the same. The driving voltage generated by the data lead 109 changes the carrier concentration and conductivity in the channel of the amplifying field-effect transistor 108, thereby controlling the drain current of the amplifying field-effect transistor 108, and thus making the control gate voltage of the gate control electrode 106 match the gray level value corresponding to the driving voltage. Different gate insulating layer 105 thicknesses make the control gate voltage construct electric fields of different intensities to regulate the carrier mobility in the corresponding light-emitting unit 101 and adjust the luminous efficiency of the light-emitting unit 101.

[0030] The smaller the thickness of the gate insulating layer 105, the greater the electric field strength and the greater the improvement in luminous efficiency.

[0031] In this specific embodiment, such as Figure 2 As shown, each of the light-emitting units 101 includes an anode 102, a light-emitting functional layer 103, and a cathode 104, and each cathode 104 is provided with a gate insulating layer 105 and a gate control electrode 106.

[0032] It should be noted that in a general QLED or OLED, the red light emitting unit usually has the highest photoelectric conversion efficiency (light emitting efficiency), which can be as high as 90-100%. The photoelectric conversion efficiency of the green light emitting unit is second. Its light emitting efficiency is generally in the range of 20-30%, which is significantly lower than that of the red light emitting unit. The photoelectric conversion efficiency of the blue light emitting unit is the lowest among the three. Its light emitting efficiency is about 10-20%, which is much lower than that of the red light emitting unit and slightly lower than that of the green light emitting unit but not much. Therefore, in the light emitting pixel point, the blue light emitting unit needs to increase the efficiency the most, the green light emitting unit second, and the red light emitting unit the least. And the thickness of the gate insulating layer 105 is inversely proportional to the strength of the electric field formed, therefore, by making the thickness of the gate insulating layer 105 corresponding to the red light emitting unit, the green light emitting unit and the blue light emitting unit decrease in turn, the same gate voltage can form electric fields of different strengths, and the electric fields of different strengths can regulate the mobility of the carriers in the corresponding light emitting unit 101 to adjust the light emitting efficiency of the light emitting unit 101. In the embodiment of the application, the light emitting efficiency of the red light emitting unit, the green light emitting unit and the blue light emitting unit increases in turn due to the decrease in the thickness of the gate insulating layer 105.

[0033] It is worth mentioning that in the prior art, if the light emitting units 101 of different colors are directly regulated by the same gate voltage, the initial light emitting efficiency of the light emitting units 101 will be different, resulting in a large difference in the light emitting efficiency to be improved, or the gate voltage is too large, causing energy waste.

[0034] In addition, by setting the amplification field effect transistor 108, the amplification field effect transistor 108 can determine the applied regulating gate voltage according to the size of the driving voltage, and the size of the driving voltage also determines the gray scale value of the light emitting unit 101, so that the embodiment of the application can adaptively adjust the gate voltage according to the change of the gray scale value. The multiple light emitting units 101 can share one regulating voltage source and can also adaptively adjust the gate voltage according to the change of the gray scale value, which can effectively save energy. The common regulating voltage source structure cannot do this.

[0035] The embodiment of the application effectively combines the advantages of simplifying the gate regulating structure and independent gate voltage regulation, making the integration of the light emitting device simpler and more energy-saving in use, and achieving better display effect.

[0036] In another specific embodiment, when the initial light emitting efficiency of the red light emitting unit, the blue light emitting unit and the green light emitting unit decreases in turn, the thickness of the gate insulating layer 105 corresponding to the red light emitting unit, the blue light emitting unit and the green light emitting unit decreases in turn.

[0037] It should be noted that in the light emitting unit 101 prepared from certain materials, the initial light emitting efficiency of the blue light emitting unit is greater than that of the green light emitting unit. Therefore, the thickness of the gate insulating layer 105 corresponding to the red light emitting unit, the blue light emitting unit and the green light emitting unit needs to be sequentially reduced to ensure that the improved light emitting efficiency remains balanced.

[0038] In this embodiment, the drain of the thin film transistor switch 107 is also connected with an energy storage capacitor 112. The energy storage capacitor 112 is used to charge when the data lead 109 is driven, and discharge when the driving is finished, so that the originally light emitting light emitting unit 101 continues to emit light, thereby prolonging the light emitting time.

[0039] It should be noted that in actual application, if the light emitting time of the light emitting unit 101 is too short, the imaging quality will be reduced, so the light emitting state is prolonged by increasing the energy storage capacitor 112, which can effectively improve the imaging quality.

[0040] In this embodiment, the adjacent red light emitting unit, green light emitting unit and blue light emitting unit constitute a light emitting pixel, and the light emitting pixel presents the required color according to the brightness of the corresponding red light emitting unit, green light emitting unit and blue light emitting unit.

[0041] In this embodiment, one end of the gate control electrode 106 is connected to the drain of the amplification field effect transistor 108, and the other end of the gate control electrode 106 is grounded.

[0042] In this embodiment, the light emitting unit 101 is a quantum dot light emitting diode, and the light emitting functional layer 103 includes a hole transport layer, a quantum dot light emitting layer and an electron transport layer.

[0043] It should be noted that the quantum dot light emitting diode (Quantum Dot Light Emitting Diodes, QLED for short) is a new type of nano-optoelectronic material based on quantum dot technology. Its light emitting principle is realized by the electron transition of semiconductor quantum dots. Compared with traditional LED and OLED, QLED has higher color saturation, lower voltage drive, higher brightness and longer service life.

[0044] In another embodiment, the light emitting unit 101 is an organic light emitting diode, and the light emitting functional layer 103 includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer and an electron injection layer.

[0045] It should be noted that the organic light emitting diode (Organic Light-Emitting Diode, OLED for short) is a kind of semiconductor device based on organic materials. OLED has the advantages of power saving, fast response speed and simple preparation.

[0046] In this embodiment, the light emitting unit 101 is provided with a gate insulating layer 105 on the anode 102 and / or the cathode 104 according to the type of the carrier in the light emitting functional layer 103, and a gate control electrode 106 is provided on the gate insulating layer 105.

[0047] For example, if the majority of the carriers in the light functional layer are electrons, the gate control electrode 106 is provided on the cathode 104 side and a positive voltage is applied to the gate control electrode 106.

[0048] In this embodiment, as shown in the figure, the thin film transistor switch 107 and the amplification field effect transistor 108 each include a source, a gate, a drain, an active layer and an insulating layer. Figure 1

[0049] The embodiment of the present application sets different thicknesses of the gate insulating layer 105 according to the light emitting efficiency that needs to be improved for the light emitting unit 101 of different colors. The different thicknesses of the gate insulating layer 105 can make the same control gate voltage construct electric fields of different intensities to control the mobility of the carriers in the corresponding light emitting unit 101 and adjust the light emitting efficiency of the light emitting unit 101. When the initial light emitting efficiency of the light emitting unit 101 is lower and the light emitting efficiency that needs to be improved is greater, a thinner thickness of the gate insulating layer 105 can be set to construct an electric field of a greater intensity to control the mobility of the carriers in the corresponding light emitting unit 101, thereby achieving greater improvement of the light emitting efficiency. In the embodiment of the present application, the light emitting efficiency that needs to be improved for the red, green and blue light emitting units 101 increases in turn, and the thickness of the corresponding gate insulating layer 105 decreases in turn, so that the actual light emitting efficiency that is improved for the red, green and blue light emitting units 101 increases in turn to meet the demand.

[0050] The drain of the thin film transistor switch 107 in the embodiment of the present application is also connected to the gate of the amplification field effect transistor 108, the drain of the amplification field effect transistor 108 is connected to the gate control electrode 106, and the driving voltage generated by the data lead 109 changes the carrier concentration and conductivity in the channel of the amplification field effect transistor 108, thereby controlling the drain current of the amplification field effect transistor 108 and making the control gate voltage of the gate control electrode 106 adapt to the gray scale value corresponding to the driving voltage. The embodiment of the present application further adjusts each gate voltage through the driving voltage, thereby achieving adaptive adjustment of the gate voltage according to the change of the individual gray scale value, making the gate voltage control more accurate and saving energy.

[0051] In summary, the embodiment of the present application simplifies the gate control structure and ensures the independence of the gate voltage control for each light emitting unit 101, thereby simplifying the structure of the light emitting device and effectively avoiding energy waste.

[0052] ​It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

[0053] The various embodiments in this specification are described in a related manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0054] The above are merely preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention are included within the scope of protection of the present invention.

Claims

1. A full-color gate-controlled light-emitting device with common gate voltage, characterized in that, The full-color gate-regulated light-emitting device comprises a plurality of light-emitting units arranged in rows and columns, the light-emitting unit comprising an anode, a light-emitting functional layer, and a cathode, and the light-emitting unit is divided into red light-emitting units, green light-emitting units, and blue light-emitting units according to the light-emitting color of the light-emitting functional layer; a gate insulating layer is arranged on the side of the anode and / or the cathode of the light-emitting unit, a gate regulating electrode is arranged on the gate insulating layer, and the thickness of the gate insulating layer corresponding to the red light-emitting unit, the green light-emitting unit, and the blue light-emitting unit decreases in turn; each light-emitting unit corresponds to a thin film transistor switch and an amplification field effect transistor, the anode of the light-emitting unit is connected to the drain of the thin film transistor switch, the source of the thin film transistor switch is connected to a data lead wire for controlling the brightness of the light-emitting unit, the gate of the thin film transistor switch is connected to a scanning lead wire for controlling the gating of the thin film transistor switch, the drain of the thin film transistor switch is also connected to the gate of the amplification field effect transistor, the drain of the amplification field effect transistor is connected to the gate regulating electrode, and the source of the amplification field effect transistor is connected to a first regulating voltage source; wherein the initial light-emitting efficiency of the red light-emitting unit, the green light-emitting unit, and the blue light-emitting unit decreases in turn. When the full-color gate-regulated light-emitting device is regulated by the gate, the first regulating voltage source applies a first potential to make the source input voltage of each amplification field effect transistor the same, and the driving voltage generated by the data lead wire changes the carrier concentration and conductivity in the channel of the amplification field effect transistor, thereby controlling the drain current size of the amplification field effect transistor, and then making the regulating gate voltage of the gate regulating electrode adapt to the gray scale value corresponding to the driving voltage; different thicknesses of the gate insulating layer make the regulating gate voltage construct different intensity electric fields to regulate the mobility of the carriers in the light-emitting unit and adjust the light-emitting efficiency of the light-emitting unit; wherein the smaller the thickness of the gate insulating layer, the greater the intensity of the electric field constructed, and the greater the light-emitting efficiency improved.

2. The common-gate voltage full-color gate-controlled light-emitting device according to claim 1, wherein When the initial light-emitting efficiency of the red light-emitting unit, the blue light-emitting unit, and the green light-emitting unit decreases in turn, the thickness of the gate insulating layer corresponding to the red light-emitting unit, the blue light-emitting unit, and the green light-emitting unit decreases in turn.

3. The common-gate-voltage full-color gate-controlled light emitting device according to claim 1, wherein, The drain of the thin film transistor switch is also connected to an energy storage capacitor, which is used to charge when the data lead wire is driven and discharge when the driving is finished, so that the light-emitting unit originally emitting light continues to emit light, thereby prolonging the light-emitting time.

4. The common-gate-voltage full-color gate-controlled light emitting device according to claim 1, wherein Adjacent red light-emitting units, green light-emitting units, and blue light-emitting units constitute a light-emitting pixel, and the light-emitting pixel presents a required color according to the brightness of the red light-emitting unit, the green light-emitting unit, and the blue light-emitting unit corresponding thereto.

5. The common-gate-voltage full-color gate-controlled light emitting device according to claim 1, wherein One end of the gate regulating electrode is connected to the drain of the amplification field effect transistor, and the other end of the gate regulating electrode is grounded.

6. The common-gate-voltage full-color gate-controlled light emitting device according to claim 1, wherein The light emitting unit is a quantum dot light emitting diode, and the light emitting functional layer comprises a hole transport layer, a quantum dot light emitting layer and an electron transport layer.

7. The common-gate-voltage full-color gate-controlled light emitting device according to claim 1, wherein The light emitting unit is an organic light emitting diode, and the light emitting functional layer comprises a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer and an electron injection layer.

8. The common-gate-voltage full-color gate-controlled light emitting device according to claim 1, wherein, The light emitting unit is provided with the gate insulation layer on the anode and / or the cathode according to the carrier type in the light emitting functional layer, and the gate control electrode is provided on the gate insulation layer.

9. The common-gate-voltage full-color gate-controlled light emitting device according to claim 1, wherein, The thin film transistor switch and the amplification field effect transistor each comprise a source, a gate, a drain, an active layer and an insulation layer.

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