Magnetic element, preparation method thereof and electronic equipment

Abstract

The invention belongs to the technical field of magnetic elements, and discloses a magnetic element, a preparation method thereof and electronic equipment. The magnetic element comprises a first electrode layer, a dielectric layer, a second electrode layer and a flexible substrate, the first electrode layer is made of ferroferric oxide, the dielectric layer is made of monocrystalline gadolinium-doped cerium dioxide, the second electrode layer is made of conductive silica gel, and the flexible substrate is used for providing flexible support. The magnetic element has first magnetic anisotropy; when a first electric field is applied between the first electrode layer and the second electrode layer, the magnetic element has a second magnetic anisotropy different from the first magnetic anisotropy. Through the synergistic effect of the first electrode layer and the dielectric layer, magnetic regulation and control based on an electric field are achieved while the flexible self-supporting film is obtained. In addition, the device has the advantages of being simple in structure and easy to achieve.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetic elements, and in particular to a magnetic element and a preparation method thereof, and electronic equipment. Background Art

[0002] At present, flexible electronics is a hot topic in research, and more and more new intelligent flexible electronic devices are emerging, gradually changing people's lifestyles. Flexible electronic devices have attracted extensive attention and research due to their advantages such as bendability, fatigue resistance and portability. In order to pursue higher performance flexible electronic devices and meet the needs of miniaturization, flexibility, integration, low power consumption, etc., people have put forward higher and higher requirements for flexible functional materials, especially oxide thin film materials with rich functional properties.

[0003] In recent years, with the advancement of film growth and peeling technology, self-supporting oxide films have been developed. Because they are free from the constraints of the substrate and show excellent flexibility while maintaining rich magnetic and electrical functions, they are the focus of current research. Developing new methods for electrically controlled magnetism is the key to promoting the application of self-supporting oxide films in information storage, smart sensing, biomedicine and other fields.

[0004] Therefore, how to solve the current difficulties in magnetic control and small amount of magnetic control of self-supporting oxide films has become a current research difficulty. Summary of the invention

[0005] The purpose of the present invention is to propose a magnetic element, aiming to provide a magnetic element that can achieve magnetic regulation based on an electric field and a preparation method and a magnetic element.

[0006] To achieve the above object, a first aspect of the present invention provides a magnetic element, the magnetic element comprising:

[0007] A first electrode layer, made of ferroferric oxide;

[0008] The second electrode layer is made of conductive silicone;

[0009] a dielectric layer, located between the first electrode layer and the second electrode layer, and made of single-crystalline gadolinium-doped cerium dioxide;

[0010] A flexible substrate, located at a side of the second electrode layer away from the first electrode layer, and used to provide flexible support for the second electrode layer, the dielectric layer and the first electrode layer;

[0011] Wherein, the magnetic element has a first magnetic anisotropy;

[0012] When a first electric field exists between the first electrode layer and the second electrode layer, the magnetic element has a second magnetic anisotropy different from the first magnetic anisotropy; and the first electric field is higher than a preset electric field.

[0013] According to some embodiments of the present invention, when the first electric field is applied to the first electrode layer and the second electrode layer, the ferromagnetic resonance field of the magnetic element shifts toward a low magnetic field, and the displacement of the ferromagnetic resonance field varies with the intensity of the first electric field.

[0014] According to some embodiments of the present invention, the greater the absolute value of the intensity of the first electric field, the greater the displacement of the ferromagnetic resonance field.

[0015] According to some embodiments of the present invention, the displacement of the ferromagnetic resonance field is less than 255 Oe.

[0016] According to some embodiments of the present invention, the thickness of the first electrode layer is 100-200 nm.

[0017] According to some embodiments of the present invention, the thickness of the dielectric layer is 100-300 nm.

[0018] According to some embodiments of the present invention, the flexible substrate is made of polydimethylsiloxane.

[0019] According to some embodiments of the present invention, the doping ratio of gadolinium in the gadolinium-doped ceria is 20%.

[0020] To achieve the above object, the second aspect of the present invention provides a method for preparing the above magnetic element, the method comprising the following steps:

[0021] Step S100: depositing a strontium aluminate film, a ferrosoferric oxide film, and a gadolinium-doped cerium dioxide film on a first substrate in sequence to obtain a first stack having a sacrificial layer, a first electrode layer, and a dielectric layer;

[0022] Step S200: pasting conductive silicone on the flexible substrate to obtain a second stack having a second electrode layer;

[0023] Step S300: stacking the first stack and the second stack so that the second electrode layer and the dielectric layer are bonded to obtain a magnetic stack;

[0024] Step S400: placing the magnetic stack in a first solution, and dissolving the sacrificial layer with the first solution to obtain a magnetic element.

[0025] According to some embodiments of the present invention, the flexible substrate is made of polydimethylsiloxane.

[0026] According to some embodiments of the present invention, the thickness of the sacrificial layer is 20-50 nm.

[0027] According to some embodiments of the present invention, the first solution is capable of dissolving strontium titanate.

[0028] According to some embodiments of the present invention, the first solution is water.

[0029] According to some embodiments of the present invention, the first substrate is a perovskite single crystal material.

[0030] According to some embodiments of the present invention, the material of the first substrate is one of strontium titanate, strontium tantalum lanthanum aluminate, SmScO3 or LaAlO3.

[0031] According to some embodiments of the present invention, the step of sequentially depositing a strontium aluminate film, a ferrosoferric oxide film, and a gadolinium-doped cerium dioxide film on a first substrate to form a sacrificial layer, a first electrode layer, and a dielectric layer includes:

[0032] The substrate is attached to a hot stage and placed in a pulsed laser deposition system, and vacuuming, heating, oxygen introduction, laser pre-sputtering, and epitaxial growth are performed in sequence to grow a strontium titanate film, a ferrosoferric oxide film, and a gadolinium-doped cerium dioxide film on the first substrate in sequence.

[0033] To achieve the above objective, a second aspect of the present invention provides an electronic device, which includes a magnetic element; the magnetic element is the magnetic element described above, or a magnetic element manufactured by the method described above.

[0034] Therefore, compared with the prior art, the present invention has the following beneficial effects:

[0035] The magnetic element disclosed in the present invention comprises a first electrode layer, a dielectric layer, a second electrode layer and a flexible substrate. The material of the first electrode layer is ferrosoferric oxide, the material of the dielectric layer is single crystal gadolinium-doped cerium dioxide, the material of the second electrode layer is conductive silicone, and the flexible substrate is used to provide flexible support. The magnetic element has a first magnetic anisotropy, and when a first electric field exists between the first electrode layer and the second electrode layer, the magnetic element has a second magnetic anisotropy different from the first magnetic anisotropy. The present invention realizes the magnetic regulation of the flexible self-supporting element based on the electric field through the synergistic effect of the first electrode layer and the dielectric layer. In addition, the present invention has the beneficial effects of simple structure and easy implementation. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0037] Figure 1 is a schematic structural diagram of a magnetic element according to an embodiment of the present invention;

[0038] Figure 2 These are out-of-plane ferromagnetic resonance spectrum test diagrams of the magnetic element of an embodiment of the present invention when subjected to 0V electric field, -19V electric field and 0V electric field respectively;

[0039] Figure 3 These are test diagrams of out-of-plane ferromagnetic resonance spectra of the magnetic element of an embodiment of the present invention when subjected to 0V electric field, +22V electric field and 0V electric field respectively;

[0040] Figure 4 The ferromagnetic resonance field of the magnetic element of the embodiment of the present invention is a curve diagram showing the change of the voltage when the electric field is 0 to -19V and the electric field is 0 to +22V respectively;

[0041] Figure 5 is a schematic flow chart of a method for preparing a magnetic element according to an embodiment of the present invention;

[0042] Figure 6 It is a schematic diagram of the structure of the magnetic element in each preparation process of the embodiment of the present invention;

[0043] Figure 7 FIG. 5 is an XRD diffraction pattern of the first stack according to an embodiment of the present invention.

[0044] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0046] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0047] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of the features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or solutions that satisfy both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0048] At present, flexible electronics is a hot topic in research, and more and more new intelligent flexible electronic devices are emerging, gradually changing people's lifestyles. Flexible electronic devices have attracted extensive attention and research due to their advantages such as bendability, fatigue resistance and portability. In order to pursue higher performance flexible electronic devices and meet the needs of miniaturization, flexibility, integration, low power consumption, etc., people have put forward higher and higher requirements for flexible functional materials, especially oxide thin film materials with rich functional properties.

[0049] In recent years, with the advancement of film growth and peeling technology, self-supporting oxide films have been developed. Because they are free from the constraints of the substrate and show excellent flexibility while maintaining rich magnetic and electrical functions, they are the focus of current research. Developing new methods for electrically controlled magnetism is the key to promoting the application of self-supporting oxide films in information storage, smart sensing, biomedicine and other fields.

[0050] Therefore, how to solve the current difficulties in magnetic control and small amount of magnetic control of self-supporting oxide films has become a current research difficulty.

[0051] The purpose of the embodiments of the present invention is to provide a magnetic element, aiming to provide a magnetic element that can achieve magnetic regulation based on an electric field, a preparation method thereof, and a magnetic element.

[0052] like Figure 1As shown, a magnetic element of an embodiment of the present invention includes a first electrode layer 10, a second electrode layer 30, a dielectric layer 20, and a flexible substrate 40, wherein the dielectric layer 20 is located between the first electrode layer 10 and the second electrode layer 30, and the flexible substrate 40 is located on a side of the second electrode layer 30 away from the first electrode layer 10, the first electrode layer 10 is made of ferrosoferric oxide, the second electrode layer 30 is made of conductive silicone, the dielectric layer 20 is made of single crystal gadolinium-doped cerium dioxide, and the flexible substrate 40 is used to provide flexible support for the first electrode layer 10, the dielectric layer 20, and the second electrode layer 30.

[0053] The first electrode layer of the embodiment of the present invention is a ferroferric oxide film, which is a magnetic material and also an electrode material. The thickness of the first electrode layer is 100 nm.

[0054] It should be understood that the ferroferric oxide has a high Curie temperature, a relatively high saturation magnetization, a small coercive force and theoretically predicted half-metallic properties, and has great potential in the application of spin electronics.

[0055] It should be noted that the thickness of the first electrode layer may be 100-200 nm, or other thicknesses, which are not specifically limited here.

[0056] The dielectric layer of the embodiment of the present invention is a single crystal gadolinium-doped ceria GCO film, wherein the magnetic performance of the magnetic element in the first electric field is related to the gadolinium doping amount. The thickness of the dielectric layer is 300nm. The gadolinium doping amount in the dielectric layer is 20%.

[0057] It should be noted that the thickness of the dielectric layer may be 100-300 nm, or other thicknesses, which are not specifically limited here. The doping amount of gadolinium may not be limited to 20%.

[0058] When a first electric field higher than a preset electric field acts on the dielectric layer, the magnetic anisotropy of the magnetic element of the embodiment of the present invention changes. The ferromagnetic resonance field of the magnetic element shifts toward the low magnetic field, and the offset distance, i.e., the displacement, of the ferromagnetic resonance field changes with the intensity of the first electric field; within a certain range, the greater the absolute value of the intensity of the first electric field, the greater the displacement of the ferromagnetic resonance field.

[0059] The displacement of the ferromagnetic resonance field in the embodiment of the present invention is less than 255 Oe.

[0060] It should be noted that the displacement of the ferromagnetic resonance field is not limited to being less than 255 Oe, and is specifically related to factors such as the intensity of the applied first electric field, the parameters of the first electrode layer and the dielectric layer themselves, and the like.

[0061] The second electrode layer of the embodiment of the present invention is a conductive silicone film, which is an electrode material with a sticky surface that can adhere to the dielectric layer.

[0062] The flexible substrate of the embodiment of the present invention is a flexible material, which can be used to provide support for the second electrode layer, the dielectric layer, and the first electrode layer. The material of the flexible substrate is polydimethylsiloxane (PDMS).

[0063] It should be noted that the flexible substrate is not limited to polydimethylsiloxane (PDMS), but may also be other flexible materials.

[0064] In order to verify the magnetic properties of the magnetic element of the embodiment of the present invention, different electric fields are applied between the first electrode layer and the second electrode layer of the magnetic element of the embodiment of the present invention. When different electric fields exist between the first electrode layer and the second electrode layer, the response of the magnetic element in the electron paramagnetic resonance test is obtained.

[0065] An electric field of 0 to -19 V, -19 V to 0 V, 0 V to +22 V, and +22 V to 0 V is applied between the first electrode layer and the second electrode layer of the magnetic element of the embodiment of the present invention in sequence; the test graphs of the out-of-plane ferromagnetic resonance spectrum of the magnetic element at the first 0 V, -19 V, and the second 0 V are as shown in FIG. Figure 2 The test graphs of the out-of-plane ferromagnetic resonance spectrum of the magnetic component at the third 0V, +22V, and the fourth 0V are shown in the figure below. Figure 3 The variation curve of the out-of-plane ferromagnetic resonance field of the magnetic element at 0~-19V, -19V~0V, 0V~+22V, +22V~0V is shown in Figure 4 shown.

[0066] like Figure 2 As shown, the out-of-plane ferromagnetic resonance field of the magnetic element at the first 0V, -19V, and second 0V are 6873.78Oe, 6622.77Oe, and 6817.32Oe, respectively; indicating that the -19V electric field at both ends of the dielectric layer can cause the out-of-plane ferromagnetic resonance field of the magnetic element to shift by 251.01Oe, and the out-of-plane ferromagnetic resonance field of the magnetic element shifts a small amount during the two 0V electric fields, the value of the out-of-plane ferromagnetic resonance field of the magnetic element is smaller when the electric field is applied, and the value of the out-of-plane ferromagnetic resonance field of the magnetic element after applying the electric field in the opposite direction is smaller.

[0067] like Figure 3 As shown, the out-of-plane ferromagnetic resonance field of the magnetic element at the third 0V, +22V, and fourth 0V are 6817.32Oe, 6629.03Oe, and 6820.10e, respectively; indicating that the +22V electric field at both ends of the dielectric layer can cause the out-of-plane ferromagnetic resonance field of the magnetic element to shift by 188.29Oe, and the out-of-plane ferromagnetic resonance field of the magnetic element also shifted a small amount at the two 0V electric fields. The out-of-plane ferromagnetic resonance field of the magnetic element is smaller when the electric field is applied, and the out-of-plane ferromagnetic resonance field of the magnetic element is larger after the positive direction electric field is applied.

[0068] like Figure 4 As shown, the value of the out-of-plane ferromagnetic resonance field of the magnetic element under the action of the electric field does not decrease at a uniform rate. The value of the out-of-plane ferromagnetic resonance field shows a rapid decrease period between 17V and 22V and between -15 and -19V, indicating that when the electric field is applied to the first electrode layer and the second electrode layer, the ferromagnetic resonance field of the magnetic element shifts to the low magnetic field, and the displacement of the ferromagnetic resonance field changes with the intensity of the electric field. The greater the absolute value of the intensity of the electric field, the greater the displacement of the ferromagnetic resonance field. And the displacement of the out-of-plane ferromagnetic resonance field of the magnetism increases with the intensity in the positive direction and the negative direction, and the change pattern is different.

[0069] In summary, the magnetic element of the embodiment of the present invention has an offset of the ferromagnetic resonance field under a certain electric field, and the change of the ferromagnetic resonance field is small when the electric field is withdrawn. Therefore, the magnetic element of the embodiment of the present invention realizes magnetic regulation based on the electric field and is reversible.

[0070] In another embodiment of the present invention, the magnetic element has different dielectric layer thicknesses. The thickness of the dielectric layer is reduced from 300 nm to 100 nm. The ferromagnetic resonance field of the magnetic element under the action of the electric field produces the same regular offset. The magnetic element of the embodiment of the present invention produces the same ferromagnetic resonance field offset when a smaller electric field is applied.

[0071] The embodiment of the present invention also discloses a method for preparing the aforementioned magnetic element.

[0072] like Figure 5-6 As shown, the method for preparing a magnetic element according to an embodiment of the present invention comprises the following steps:

[0073] Step S100: depositing a strontium aluminate film, a ferrosoferric oxide film, and a gadolinium-doped cerium dioxide film on a first substrate in sequence to obtain a first stack having a sacrificial layer, a first electrode layer, and a dielectric layer;

[0074] Specifically, it includes at least steps S101 to S102:

[0075] Step S101: cleaning the first substrate;

[0076] A 5mm×5mm×5mm STO substrate was cleaned with alcohol, acetone, and alcohol ultrasonic cleaning for 5 minutes in sequence, and the residual liquid on the surface of the substrate was blown dry with nitrogen;

[0077] Step S102: Deposition is performed on the surface of the first substrate by pulsed laser deposition to obtain a first stack;

[0078] (1) The first substrate obtained in step S101 is adhered to the hot stage of the pulsed laser deposition system, and after heating and drying at 120 degrees for 5 minutes, the hot stage is placed in the pulsed laser deposition system; a mechanical pump and a molecular pump are used to evacuate the vacuum to less than 8×10-4Pa in sequence;

[0079] (2) Turn on the heating module and set the temperature to 800°C and the heating rate to 20°C / min; after the temperature is heated to 800°C, close the molecular pump valve, open the mechanical pump valve, open the oxygen valve, and adjust the oxygen pressure to 20Pa;

[0080] (3) Adjust the optical path, turn on the target rotation, turn on the laser, pre-sputter strontium aluminate SAO at a frequency of 5 Hz for 5 min, and adjust the laser power to 1 W / cm 2 ;

[0081] (4) Open the baffle and start growing strontium aluminate film, the laser frequency is 2 Hz, and the growth time is controlled at 20 min;

[0082] (5) Lower the temperature to 450 °C, close the baffle, close the oxygen valve, wait until the vacuum is less than 10 Pa, close the mechanical pump valve, open the molecular pump valve, replace the Fe3O4 target, and pre-sputter the Fe3O4 target at a frequency of 5 Hz for 5 min. The laser power is 1.4 W / cm 2 ;

[0083] (6) Open the baffle and start growing Fe3O4 film, laser frequency 5 Hz, growth time 20 min;

[0084] (7) The temperature was lowered to room temperature, the molecular pump valve was closed, the mechanical pump valve was opened, the oxygen valve was opened, the oxygen pressure was adjusted to 4 Pa, the baffle was closed, the gadolinium-doped ceria (GCO) target was replaced, and the GCO target was pre-sputtered at a frequency of 5 Hz for 5 min. The laser power was 1.4 W / cm 2 ;

[0085] (8) Open the baffle and start growing the GCO film with a laser frequency of 5 Hz and a growth time of 60 min;

[0086] (9) When growth is finished, close the oxygen valve and the mechanical pump valve.

[0087] In the obtained first stack, the thickness of the sacrificial layer is 30 nm, the thickness of the first electrode layer is 100 nm, and the thickness of the dielectric layer is 300 nm.

[0088] Here, the thickness of the sacrificial layer SAO may be 20-50 nm, not limited to 30 nm; the thickness of the first electrode layer may be 100-200 nm, not limited to 100 nm; the thickness of the dielectric layer may be 100-300 nm, not limited to 300 nm.

[0089] Figure 7 This is the XRD diffraction pattern of the first stack obtained in this step. Figure 7 , the components of the first stack include STO, SAO, and Fe3O4, and there are no diffraction peaks of other impurities.

[0090] Step S200: pasting conductive silicone on the flexible substrate to obtain a second stack having a second electrode layer;

[0091] Specifically, it includes: adhering a conductive adhesive film to a PDMS (polydimethylsiloxane) substrate. The size of the conductive adhesive film is the same as that of the first stack, 5 mm×5 mm.

[0092] Step S300: stacking the first stack and the second stack so that the second electrode layer and the dielectric layer are bonded to obtain a magnetic stack;

[0093] Specifically, one side of the conductive silica gel in the first stack is attached to the surface of the GCO in the first stack.

[0094] Step S400: placing the magnetic stack in a first solution, and dissolving the sacrificial layer with the first solution to obtain a magnetic element.

[0095] Specifically, water was used as the first solution, and the magnetic stack was placed in a beaker containing water to obtain a Fe3O4 / GCO / conductive silica gel / PDMS self-supporting film.

[0096] It should be noted that the first solution is a solution capable of dissolving strontium titanate, which may be water, an acidic solution or an alkaline solution, which is not specifically limited here.

[0097] The magnetic element produced by the embodiment of the present invention may further include a first wire and a second wire, wherein the first wire is led out from the first electrode layer, and the second wire is led out from the second electrode layer. When used for testing, a DC electric field is provided to the first wire and the second wire by a KE6517B power supply, thereby realizing magnetic control of the magnetic element.

[0098] In summary, the embodiment of the present invention uses SAO as a sacrificial layer to successfully prepare a Fe3O4 / GCO self-supporting film, freeing itself from the constraints of the first substrate, which helps to achieve magnetic regulation of the flexible film.

[0099] Furthermore, an embodiment of the present invention provides an electronic device, which includes a magnetic element.

[0100] The magnetic element is the magnetic element mentioned above or a magnetic element made by the above-mentioned preparation method.

[0101] Therefore, compared with the prior art, the embodiments of the present invention have the following beneficial effects:

[0102] The magnetic element disclosed in the present invention includes a substrate, a bottom electrode layer, a dielectric layer and a top electrode layer, wherein the dielectric layer is close to the bottom electrode layer, the top electrode layer is close to the dielectric layer, the material of the bottom electrode layer is single crystal lanthanum strontium manganate, the material of the dielectric layer is single crystal gadolinium-doped cerium dioxide, and the bottom electrode layer has a first magnetic parameter; after applying a first electric field to the bottom electrode layer and the top electrode layer, the bottom electrode layer has a second magnetic parameter different from the first magnetic parameter; after removing the first electric field, the bottom electrode layer has the first magnetic parameter. The present invention realizes the magnetic regulation of the flexible film based on the electric field through the interaction between the bottom electrode layer and the dielectric layer, and the magnetic regulation is reversible, which can lay the foundation for the realization of highly integrated modern memory. The magnetic element has the beneficial effects of simple structure and easy implementation.

[0103] The above description is only an exemplary embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the technical concept of the present invention, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. A magnetic element, characterized in that: include: A first electrode layer, made of ferroferric oxide; The second electrode layer is made of conductive silicone; a dielectric layer, located between the first electrode layer and the second electrode layer, and made of single-crystalline gadolinium-doped cerium dioxide; A flexible substrate, located at a side of the second electrode layer away from the first electrode layer, and used to provide flexible support for the second electrode layer, the dielectric layer and the first electrode layer; Wherein, the magnetic element has a first magnetic anisotropy; When a first electric field exists between the first electrode layer and the second electrode layer, the magnetic element has a second magnetic anisotropy different from the first magnetic anisotropy; and the first electric field is higher than a preset electric field.

2. The magnetic element according to claim 1, characterized in that: When the first electric field is applied to the first electrode layer and the second electrode layer, the ferromagnetic resonance field of the magnetic element shifts toward a low magnetic field, and the displacement of the ferromagnetic resonance field changes with the intensity of the first electric field.

3. The magnetic element according to claim 2, characterized in that: The greater the absolute value of the intensity of the first electric field, the greater the displacement of the ferromagnetic resonance field.

4. The magnetic element according to claim 3, characterized in that: The displacement of the ferromagnetic resonance field is less than 255 Oe.

5. The magnetic element according to claim 1, characterized in that: The thickness of the first electrode layer is 100-200 nm; And / or, the thickness of the dielectric layer is 100-300 nm; And / or, the flexible substrate is made of polydimethylsiloxane.

6. The magnetic element according to claim 1, characterized in that: The doping ratio of gadolinium in the gadolinium-doped cerium dioxide is 20%.

7. The method for preparing a magnetic element according to any one of claims 1 to 6, characterized in that: The following steps are involved: Depositing a strontium aluminate film, a ferrosoferric oxide film, and a gadolinium-doped cerium dioxide film on a first substrate in sequence to obtain a first stack having a sacrificial layer, a first electrode layer, and a dielectric layer; Pasting conductive silicone on the flexible substrate to obtain a second stack having a second electrode layer; stacking the first stack and the second stack so that the second electrode layer and the dielectric layer are bonded to obtain a magnetic stack; The magnetic stack is placed in a first solution, and the sacrificial layer is dissolved by the first solution to obtain a magnetic element.

8. The magnetic element according to claim 7, characterized in that: The material of the flexible substrate is polydimethylsiloxane; And / or, the thickness of the sacrificial layer is 20 to 50 nm; and / or, the first solution is capable of dissolving strontium titanate; preferably, the first solution is water; And / or, the first substrate is a perovskite single crystal material; preferably, the material of the first substrate is one of strontium titanate, strontium tantalum lanthanum aluminate, SmScO3 or LaAlO3.

9. The magnetic element according to claim 7, characterized in that: The method comprises depositing a strontium aluminate film, a ferrosoferric oxide film, and a gadolinium-doped cerium dioxide film on the first substrate in sequence to form a sacrificial layer, a first electrode layer, and a dielectric layer, including: The substrate is attached to a hot stage and placed in a pulsed laser deposition system, and vacuuming, heating, oxygen introduction, laser pre-sputtering, and epitaxial growth are performed in sequence to grow a strontium titanate film, a ferrosoferric oxide film, and a gadolinium-doped cerium dioxide film on the first substrate in sequence.

10. An electronic device, characterized in that: including magnetic components; The magnetic element is the magnetic element described in any one of claims 1-6, or a magnetic element manufactured by the method described in any one of claims 7-9.

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