Super-resolution photoetching device based on topological photonic crystal and method thereof

Abstract

The invention discloses a super-resolution photoetching device based on a topological photonic crystal and a method thereof. The device is sequentially provided with a transparent substrate, a mask layer, a planarization film layer and a photonic crystal structure layer from top to bottom, the photonic crystal structure layer is formed by combining sub-unit cells in different dielectric film layer stacking modes, and the photonic crystal multilayer film formed by combining the sub-unit cells has a topological non-trivial state. According to the device, a photon energy band is regulated and controlled by using subunit cells, and a spatial spectrum transmission pass band is formed. According to the spatial frequency spectrum filtering function of the photonic crystal multilayer film, high-frequency diffracted waves of the same level are efficiently transmitted, and can be transmitted to the photosensitive layer through a large working distance to form a super-resolution array pattern of a deep sub-wavelength scale. In actual production, the topological non-trivial state can reduce the requirements of the device preparation process. Moreover, the photoetching device with the large working distance is wider in application range, the operability of super-resolution photoetching is improved, and the service life of the photoetching device is prolonged.

Description

Technical Field

[0001] The present invention relates to the technical field of super-resolution lithography, and in particular to a super-resolution lithography device based on topological photonic crystal and a method thereof. Background Art

[0002] As a mainstream chip manufacturing method, optical lithography is a key technology that promotes the rapid development of the entire integrated circuit industry and is an important cornerstone of scientific and technological progress and information security. However, due to the diffraction limit of light, traditional lithography technology generally improves resolution by reducing the exposure wavelength and increasing the numerical aperture, but this method is extremely complex and the equipment cost is extremely high. Therefore, there is an urgent need for a new lithography method that can break the diffraction limit.

[0003] Near-field lithography is the simplest and most direct method to achieve super-resolution lithography because it can utilize high-frequency evanescent waves. In particular, the combination with surface plasmons can further increase the degree of freedom in controlling the evanescent waves. However, surface plasmon lithography relies on metal materials, which leads to large transmission losses and too short working distances of lithographic devices. Therefore, surface plasmon lithography mostly uses contact lithography methods, which reduces operability and shortens the service life of lithographic devices. The method of using all-dielectric photonic crystals to excite Bloch surfaces to control evanescent waves greatly improves transmission efficiency and thus significantly expands the working distance of super-resolution lithographic devices. However, the evanescent wave control performance of photonic crystals is sensitive to the thickness of the dielectric film layer, resulting in extremely high requirements for device preparation technology and difficulty in ensuring performance stability. Summary of the invention

[0004] In view of this, the purpose of the present invention is to provide a super-resolution lithography device based on topological photonic crystals and a method thereof. The device utilizes dielectric multilayer thin films stacked into a subcell structure, and then utilizes subcells to arrange to form a topological photonic crystal, thereby realizing the frequency-selective transmission of high-frequency evanescent waves, and efficiently passing through a working gap layer to form a deep subwavelength periodic pattern in a photosensitive layer.

[0005] In order to achieve the above object, the present invention provides the following technical solutions:

[0006] The super-resolution lithography device based on topological photonic crystals provided by the present invention comprises a transparent base layer, a grating mask layer, a planarization film layer, a working gap layer, a photosensitive layer, and a substrate layer arranged in sequence; at least comprises a photonic crystal structure layer; the photonic crystal structure layer is arranged between the planarization film layer and the working gap layer; the photonic crystal structure layer comprises a plurality of sub-cells arranged, the sub-cells are composed of a stack of dielectric film layers, and the photonic crystal structure layer has a topological non-trivial state.

[0007] Furthermore, the film thickness of the same dielectric in the photonic crystal structure layer is equal, and the film thickness of each layer is 10nm-100nm; or the sub-cells are composed of dielectrics with different refractive indices.

[0008] Furthermore, the dielectric film layer material in the photonic crystal structure layer is any one of MgF2, Si3N4, GaN, AlN, ZrO2, Al2O3, TiO2, and SiO2 dielectrics.

[0009] Furthermore, the photonic crystal structure layer is prepared by alternately depositing dielectric materials with different refractive indices on the planarized film layer by a physical vapor deposition method.

[0010] Furthermore, the topological photonic crystal structure layer comprises at least two sub-cells: sub-cell a and sub-cell b; the sub-cell a and sub-cell b constitute a photonic crystal film structure. The photonic crystal structure layer has a topological non-trivial state.

[0011] Furthermore, the two types of sub-unit cells include at least one group of sub-unit cells a and two groups of sub-unit cells b.

[0012] Further, the grating mask layer is a periodic pattern mask layer composed of nano-slits or hole arrays; or the grating mask layer material is selected from any one of Au, Al, Cr, TiO2 or Si3N4; or the arrangement period of the nano-slit or hole array structure is 40nm to 400nm, and the duty cycle is 0.1 to 0.9.

[0013] Furthermore, the film layer stacking method of the subcell a is TiO2 / SiO2 / Al2O3; the film layer stacking method of the subcell b is Al2O3 / SiO2 / TiO2.

[0014] The super-resolution lithography method based on topological photonic crystal provided by the present invention comprises the following steps:

[0015] (1) preparing a mask;

[0016] (2) planarization of the mask layer;

[0017] (4) depositing a dielectric multilayer film; the deposited dielectric multilayer film is a topological photonic crystal composed of multiple dielectric film layers with different refractive indices forming different sub-unit cells, which are then stacked and arranged;

[0018] (5) preparing a photosensitive layer on a substrate;

[0019] (6) Placing the photolithography device parallel to the photosensitive layer and controlling the working distance through instruments and equipment;

[0020] (7) TE polarized illumination light is incident vertically from one side of the mask layer for exposure.

[0021] Furthermore, the topological photonic crystal is prepared by depositing dielectric materials with different refractive indices on a flattened film layer by a physical vapor deposition method, and a group of subcells a and two groups of subcells b constitute the photonic crystal film structure in sequence; the subcells a and subcells b are dielectric multilayer films with different stacking methods.

[0022] Furthermore, the two types of sub-unit cells include at least one group of sub-unit cells a and two groups of sub-unit cells b.

[0023] Furthermore, the film layer stacking method of the subcell a is TiO2 / SiO2 / Al2O3; the film layer stacking method of the subcell b is Al2O3 / SiO2 / TiO2.

[0024] The beneficial effects of the present invention are:

[0025] The present invention provides a super-resolution lithography device based on topological photonic crystals and a method thereof. The device first stacks a sub-cell structure according to a dielectric multilayer film, and then arranges the sub-cells to form a topological photonic crystal, thereby realizing the frequency-selective transmission of high-frequency evanescent waves, and efficiently passing through a working gap layer to form a deep sub-wavelength periodic pattern in a photosensitive layer.

[0026] This device is arranged from top to bottom in sequence, including a transparent substrate, a grating mask layer consisting of a nano-slit or hole array, a flattened film layer, and a photonic crystal dielectric multilayer film. The photonic crystal dielectric multilayer film in this device has a frequency-selective transmission function, and the evanescent waves of high diffraction orders can be selectively transmitted and efficiently pass through the working gap layer. Its topological properties greatly improve the thickness tolerance of the dielectric film layer, and it can be prepared by a general physical vapor deposition method. Therefore, the device can transmit high-frequency evanescent waves to the photosensitive layer at a large working distance, forming a deep sub-wavelength lithography pattern with high light field intensity and high resolution characteristics, breaking through the diffraction limit constraint. While greatly expanding the working distance of the lithography device, it greatly reduces the difficulty of the device preparation process, which is conducive to improving the operability of super-resolution lithography, extending the service life of the lithography device, and reducing production costs.

[0027] This method can use photonic crystals to transmit evanescent waves. Compared with metal film layers, dielectric film layers have low losses and can generate stronger light intensity in the photosensitive layer. Since the super-resolution lithography device uses a dielectric film layer, the light transmission efficiency is enhanced and the light intensity in the photoresist is improved. In actual production, such a lithography device is conducive to reducing exposure time and reducing the cost of lithography process.

[0028] The device uses subcells to regulate the photon energy band so that the target working wavelength can be within the photon energy band rather than in the photon bandgap. According to the spatial spectrum filtering function of the photonic crystal multilayer film, high-frequency diffraction waves of the same order can pass efficiently and break through the larger working distance to be transmitted to the photosensitive layer, forming a super-resolution array pattern with high light field intensity characteristics. In actual production, lithography devices with large working distances have a wider range of applications, which is conducive to improving the operability of super-resolution lithography and extending the service life of lithography devices.

[0029] The subcells in the device have different stacking methods, which breaks the single periodic arrangement characteristics of the photonic crystal and forms a topological non-trivial state. This makes the lithographic device have good performance stability and greatly improves the thickness tolerance of the dielectric multilayer film, so that ordinary physical vapor deposition methods can be used to complete the film layer preparation, which significantly reduces the difficulty of the device preparation process and facilitates large-scale manufacturing.

[0030] Other advantages, objectives and features of the present invention will be described in the following description to some extent, and to some extent, will be obvious to those skilled in the art based on the following examination and study, or can be taught from the practice of the present invention. The objectives and other advantages of the present invention can be realized and obtained through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to make the purpose, technical solution and beneficial effects of the present invention clearer, the present invention provides the following drawings for explanation.

[0032] Figure 1 It is a structural schematic diagram of an embodiment;

[0033] Figure 2 It is a flow chart of the experiment of the embodiment;

[0034] Figure 3 The energy band and optical transfer function curve of the topological photonic crystal in the embodiment;

[0035] Figure 4 This is a simulation effect diagram of the evanescent wave regulation based on the topological photonic crystal dielectric multilayer film in the embodiment.

[0036] In the figure: 1-transparent base layer; 2-grating mask layer; 3-planarization film layer; 4-photonic crystal structure layer; 4a-subcell a; 4b-subcell b; 5-working gap layer; 6-photosensitive layer; 7-substrate layer. DETAILED DESCRIPTION

[0037] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.

[0038] Example 1

[0039] like Figure 1 As shown, the super-resolution lithography device based on topological photonic crystals provided in this embodiment includes a transparent base layer, a grating mask layer, a planarization film layer, a photonic crystal structure layer, a working gap layer, a photosensitive layer, and a substrate layer arranged in sequence from top to bottom; the photonic crystal structure layer includes a sub-cell arrangement composed of a stack of dielectric film layers, and the sub-cells have different stacking methods; the photonic crystal structure layer has a topological non-trivial state, and the topological non-trivial state is formed by different stacking methods of sub-cells.

[0040] The dielectric film layers have different refractive indices;

[0041] The film thickness of the same dielectric in the photonic crystal structure layer is equal, and the film thickness of different dielectrics is equal or unequal, and the film thickness of each layer is 10nm to 100nm; or the sub-cells are composed of dielectrics with different refractive indices.

[0042] The dielectric film layer material in the photonic crystal structure layer is any one of MgF2, Si3N4, GaN, AlN, ZrO2, Al2O3, TiO2, and SiO2 dielectrics.

[0043] A planarization film layer, a grating mask layer, and a transparent base layer are arranged on the photonic crystal structure layer, and a working gap layer, a photosensitive layer, and a substrate layer are arranged below the photonic crystal structure layer.

[0044] The photonic crystal structure layer is prepared by alternately depositing two or more dielectric materials with different refractive indices on a planarized film layer by physical vapor deposition. Depending on the actual situation, the photonic crystal can be composed of three or more materials.

[0045] The topological photonic crystal structure layer includes at least two sub-cells: sub-cell a and sub-cell b; the sub-cell a and sub-cell b constitute the photonic crystal mid-layer structure. According to actual conditions, the topological photonic crystal structure layer can also be composed of three or more sub-cells. The photonic crystal structure layer has a topological non-trivial state.

[0046] The two sub-cells include at least one group of sub-cells a and two groups of sub-cells b. According to actual conditions, more groups of sub-cells a and sub-cells b can also constitute a topological photonic crystal structure layer. The grating mask layer is a periodic pattern mask layer composed of nano-slits or hole arrays; or the grating mask layer material is selected from any one of Au, Al, Cr, TiO2 or Si3N4; or the arrangement period of the nano-slit or hole array structure is 40nm~400nm, and the duty cycle is 0.1~0.9; or the transparent substrate layer is inorganic glass, fused quartz, organic glass or transparent plastic; or the material of the planarization film layer is PMMA or curing glue; or the working gap layer is any one of air, water or oil, with a thickness of 0nm~300nm.

[0047] The super-resolution lithography method based on topological photonic crystal provided in this embodiment includes the following steps:

[0048] (1) preparing a mask;

[0049] (2) planarization of the mask layer;

[0050] (4) depositing a dielectric multilayer film; the deposited dielectric multilayer film is composed of multiple dielectric film layers with different refractive indices to form different sub-cells, which are then stacked and arranged to form a topological photonic crystal;

[0051] (5) preparing a photosensitive layer on a substrate;

[0052] (6) Placing the photolithography device parallel to the photosensitive layer and controlling the working distance through instruments and equipment;

[0053] (7) TE polarized illumination light is incident vertically from one side of the mask layer for exposure.

[0054] Example 2

[0055] like Figure 1 As shown, the super-resolution lithography device based on topological photonic crystals provided in this embodiment is arranged from top to bottom in sequence: a transparent substrate 1, a grating mask layer 2 composed of a nano-slit or hole array, a flattening film layer 3, and a photonic crystal structure layer 4; the photonic crystal structure layer adopts a multi-layer film structure, and a working gap layer 5 is arranged below it; a photosensitive layer 6 and a substrate layer 7 are arranged below the working gap layer.

[0056] The transparent substrate layer 1 is inorganic glass, fused quartz, organic glass or transparent plastic. The mask layer 2 is a periodically arranged nano-slit or hole array structure, and the mask layer 2 material is Au, Al, Cr, TiO2 or SiO2 dielectric; the arrangement period of the nano-slit or hole array structure is 40nm to 400nm, and the duty cycle is 0.1 to 0.9.

[0057] The material of the planarization film layer 3 is PMMA or curing glue. The photonic crystal structure layer 4 is composed of two or more dielectric film layers with different refractive indices. Subcells a and b are arranged in the film layer, thereby forming a photonic crystal dielectric multilayer film structure. The refractive indices of the multilayer film materials in the subcells should be very different.

[0058] The photonic crystal multilayer film 4 is composed of two film layers with different refractive indices arranged alternately; the working gap layer 5 is air, water or oil, and has a thickness of 0nm to 300nm; the photosensitive layer 6 is a photoresist, a photosensitive material layer that is sensitive to incident light, and has a thickness of 5nm to 500nm; the substrate layer 7 is a supporting base for the photosensitive layer 6, and its material is glass, quartz, silicon wafer or PET.

[0059] The working process of the device in this embodiment is as follows: a TE polarized plane wave light source is used to uniformly irradiate the transparent base layer, and the plane light wave acts on the grating mask layer of the nano-slit or hole array structure to excite diffraction waves with different wave vector characteristics. The diffraction waves are transmitted to the topological photonic crystal multilayer film after passing through the flattening film layer, and further pass through the working gap layer, and finally form a super-resolution interference pattern in the photosensitive layer.

[0060] The super-resolution lithography method based on topological photonic crystal provided in this embodiment has a flow chart as shown in FIG. Figure 2 As shown, the main steps are as follows:

[0061] S1: cleaning a substrate as a transparent substrate and depositing a mask layer on the substrate;

[0062] S2: making mask patterns;

[0063] S3: planarization of the mask layer structure pattern;

[0064] S4: depositing a dielectric multilayer film structure on the planarization film layer;

[0065] S5: cleaning another substrate as a substrate, and preparing a photosensitive material on the substrate;

[0066] S6: Place the photolithography device and the photosensitive layer substrate in parallel, and control the working distance through instruments and equipment;

[0067] S7: Expose the mask layer with TE polarized illumination light incident vertically from one side.

[0068] The device transmits high-frequency evanescent waves to the photosensitive layer at a large working distance, forming deep sub-wavelength lithography patterns with high light field intensity and high resolution, breaking through the diffraction limit constraint. While greatly expanding the working distance of lithography devices, it greatly reduces the device preparation process requirements, which is conducive to improving the operability of super-resolution lithography, extending the service life of lithography devices, and reducing production costs.

[0069] Example 3

[0070] like Figure 1 As shown, the device of this embodiment is sequentially arranged from top to bottom with a photonic transparent substrate layer 1, a grating mask layer 2 with a nano-slit or hole array structure, a planarization film layer 3, and a photonic crystal structure layer 4.

[0071] A working gap layer 5, a photosensitive layer 6 and a substrate layer 7 are arranged under the photonic crystal structure layer 4; the working gap layer 5 is air, and the spacing is approximately 100 nm.

[0072] The transparent base layer 1 is made of inorganic glass, fused quartz, organic glass or transparent plastic. The transparent base layer needs to be a material with a certain hardness and not easy to deform, and has a high transmittance to ultraviolet light and visible light.

[0073] The grating mask layer 2 is a periodic mask grating, which belongs to a nano-slit or hole array structure, and its material is selected from metals such as Au, Al, Cr, or dielectric materials such as TiO2, Si3N4; the arrangement period of the nano-slit or hole array structure is 40nm~400nm, and the duty cycle is 0.1~0.9. The mask grating is formed by depositing a mask material on the base layer 1 by physical vapor deposition to form a film layer, and then using a traditional photolithography process or an electron beam direct writing process or a focused ion beam direct writing process to prepare a nano-slit or hole array structure.

[0074] The planarization film layer 3 is made of PMMA, curing glue, etc., and has a thickness of 1nm to 50nm. The planarization film layer is used to fill the mask gap. PMMA or curing glue is coated on the mask layer 2 and cured by heating or light.

[0075] The photonic crystal structure layer 4 of the topological layer is prepared by depositing three dielectric materials with different refractive indices on the flattening film layer 3 by physical vapor deposition, and the structure is as follows: Figure 1 As shown, a group of subcells a-4a and two groups of subcells b-4b constitute the photonic crystal film structure. The subcells a and b are dielectric multilayer films in different stacking modes. The total number of film layers of the photonic crystal structure is 9.

[0076] The function of the photonic crystal structure layer 4 is to excite diffraction waves of different orders when the incident light irradiates the mask layer 2. Due to the energy band characteristics of the photonic crystal, only some orders of light pass through the photonic crystal. Therefore, the photonic crystal can selectively transmit positive and negative n-order grating diffraction light, where n is the order of diffraction light excited by the mask grating.

[0077] The working principle of the device provided in this embodiment is:

[0078] When a plane wave beam illuminates the nano-slit or hole array grating of the mask layer 2, the light generates different transverse wave vectors due to the diffraction effect of the grating:

[0079] k x =nk0sinθ+m(λ / P)k0,

[0080] Wherein, k0 is the free space wave vector, n is the refractive index of the mask layer substrate, θ is the incident angle, P is the grating period, λ is the wavelength of the incident light, and m is the diffraction wave order.

[0081] The arrangement of the subcell multilayer film can regulate the photonic band gap, so that the topological photonic crystal structure has a filtering transmission function for the diffracted waves. Only the diffracted waves in a specific wave vector range are efficiently transmitted and pass through the air gap, eventually forming a super-resolution interference pattern in the photosensitive layer. The pattern period is:

[0082] p = P / (2m).

[0083] By adjusting the geometric parameters (including the number of subcells, the stacking method of subcell film layers, the thickness of the film layers, etc.) and material parameters (including the size of the refractive index and the height of the relative refractive index difference) of the photonic crystal multilayer film, it is possible to achieve selective transmission of evanescent waves of different spatial spectra, with more degrees of adjustment freedom. Moreover, the photonic crystal multilayer film has a lower transmission loss, so that the interference pattern of the photosensitive layer has a higher light field intensity, which can shorten the exposure time. In addition, the topological non-trivial state of the photonic crystal can increase the tolerance of the film thickness, which is convenient for film deposition preparation. Therefore, the present invention has the advantages of simple structure, flexible use, high efficiency and low cost.

[0084] Example 4

[0085] In this embodiment, Figure 1 As shown: TE polarized light is used, the incident wavelength is 405nm, and the incident angle is 0°; the transparent substrate layer 1 is a glass substrate; the mask layer 2 is a one-dimensional slit array Al mask with a period of 260nm and a thickness of 30nm; the flattening film layer 3 material is PMMA with a thickness of 30nm; the total number of film layers of the photonic crystal structure layer is 9, and the materials used are TiO2 (refractive index is 2.62, thickness is 28nm), SiO2 (refractive index is 1.49, thickness is 64nm), and Al2O3 (refractive index is 1.47, thickness is 42nm).

[0086] The arrangement order of the photonic crystal multilayer film is: one group of subcells a, two groups of subcells b. The film layers of subcells a-4a are stacked in the form of TiO2 / SiO2 / Al2O3; the film layers of subcells b-4b are stacked in the form of Al2O3 / SiO2 / TiO2. The photonic crystal structure layer has a topologically non-trivial state.

[0087] The film stacking method of the subcell a-4a and the subcell b-4b can also be determined according to the situation. The material of the photosensitive layer 6 is photoresist, with a refractive index of 1.69+0.04i and a thickness of 100nm. Between the photonic crystal structure layer 4 and the photosensitive layer 6 is a layer of air working distance gap 5, whose dielectric constant is 1 and the thickness is 100nm.

[0088] Figure 3 is the performance characteristic diagram of topological photonic crystal. Figure 3 (a) is the optical transfer function curve of the dielectric multilayer film at a wavelength of 405 nm, indicating that the transverse wave vector has a transmission passband, and the passband interval is located in the high-frequency wave vector range of 1.5k0 to 1.8k0. Figure 3 (b) is the photon band diagram of the dielectric multilayer film, which shows that the photonic crystal structure exhibits πZak phase characteristics for 405nm incident light and has a topologically non-trivial state.

[0089] When the TE polarized 405nm plane light wave vertically illuminates the slit grating of the mask layer, it will excite diffraction waves of different orders. If the 1st order diffraction wave is limited, the lateral wave vector is kx=1.56k0, which is just within the wave vector passband. Then only the positive and negative 1st order diffraction waves (m=1) can pass through the photonic crystal multilayer film, and other diffraction orders will be suppressed. Two coherent plane waves are transmitted to the photosensitive layer and interfere with each other to form a deep sub-wavelength periodic pattern. According to p=P / (2m), it can be concluded that the period of the interference pattern is 130nm.

[0090] Figure 4 This embodiment uses the simulation software COMSOL Multiphysics based on the finite element electromagnetic calculation method to perform simulation verification results. Figure 4 In (a), the horizontal axis x is the length direction of this embodiment, and the vertical axis z is the thickness direction of this embodiment, and the z direction is also the light wave transmission direction. It can be seen that the slit array mask excites the diffraction wave, and the diffraction wave is filtered and transmitted in the photonic crystal multilayer film, can effectively pass through the air gap layer, and form an interference pattern in the photosensitive layer, and the light field penetrates the entire photosensitive layer. Figure 4 (b) is a cross-sectional view of the light field at a depth of 50 nm in the middle of the photoresist. It can be seen that the interference pattern has a higher peak light intensity, better uniformity and contrast, and the pattern period is half of the mask grating period.

[0091] The above-described embodiments are only preferred embodiments for fully illustrating the present invention, and the protection scope of the present invention is not limited thereto. Equivalent substitutions or changes made by those skilled in the art based on the present invention are within the protection scope of the present invention. The protection scope of the present invention shall be subject to the claims.

Claims

1. A super-resolution lithography device based on topological photonic crystals, comprising a transparent base layer, a grating mask layer, a planarization film layer, a working gap layer, a photosensitive layer, and a substrate layer arranged in sequence; characterized in that: At least it includes a photonic crystal structure layer; the photonic crystal structure layer is arranged between the planarization film layer and the working gap layer; the photonic crystal structure layer is composed of a plurality of sub-cells arranged, the sub-cells are composed of a stack of dielectric film layers, and the photonic crystal structure layer has a topological non-trivial state.

2. The super-resolution lithography device based on topological photonic crystal according to claim 1, characterized in that: The film thickness of the same dielectric in the photonic crystal structure layer is equal, and the film thickness of each layer is 10nm-100nm; or the sub-cells are composed of dielectrics with different refractive indices.

3. The super-resolution lithography device based on topological photonic crystal according to claim 1, characterized in that: The dielectric film layer material in the photonic crystal structure layer is any one of MgF2, Si3N4, GaN, AlN, ZrO2, Al2O3, TiO2, and SiO2 dielectrics.

4. The super-resolution lithography device based on topological photonic crystal according to claim 1, characterized in that: The photonic crystal structure layer is prepared by alternately depositing dielectric materials with different refractive indices on a planarized film layer by a physical vapor deposition method.

5. The super-resolution lithography device based on topological photonic crystal according to claim 1, characterized in that: The topological photonic crystal structure layer includes at least two sub-cells: the two sub-cells include at least one group of sub-cells a and two groups of sub-cells b; the sub-cells a and sub-cells b constitute a photonic crystal film layer structure; the photonic crystal structure layer has a topological non-trivial state.

6. The super-resolution lithography device based on topological photonic crystal according to claim 1, characterized in that: The grating mask layer is a periodic pattern mask layer composed of nano-slits or hole arrays; or the grating mask layer material is selected from any one of Au, Al, Cr, TiO2 or Si3N4; or the arrangement period of the nano-slit or hole array structure is 40nm to 400nm, and the duty cycle is 0.1 to 0.

9.

7. The super-resolution lithography device based on topological photonic crystal according to claim 5, characterized in that: The film layer stacking method of the subcell a is TiO2 / SiO2 / Al2O3; the film layer stacking method of the subcell b is Al2O3 / SiO2 / TiO2.

8. A super-resolution lithography method based on topological photonic crystals, characterized in that: The following steps are involved: (1) preparing a mask; (2) planarization of the mask layer; (4) depositing a dielectric multilayer film; the deposited dielectric multilayer film is composed of multiple dielectric film layers with different refractive indices to form different sub-cells, which are then stacked and arranged to form a topological photonic crystal; (5) preparing a photosensitive layer on a substrate; (6) Placing the photolithography device parallel to the photosensitive layer and controlling the working distance through instruments and equipment; (7) TE polarized illumination light is incident vertically from one side of the mask layer for exposure.

9. The super-resolution lithography method based on topological photonic crystals according to claim 8, characterized in that: The topological photonic crystal is prepared by depositing dielectric materials with different refractive indices on a flattened film layer by a physical vapor deposition method, and a photonic crystal film layer structure is formed by a group of subcells a and two groups of subcells b in sequence; the subcells a and subcells b are dielectric multilayer films with different stacking methods.

10. The super-resolution lithography method based on topological photonic crystals according to claim 9, characterized in that: The film layer stacking method of the subcell a is TiO2 / SiO2 / Al2O3; the film layer stacking method of the subcell b is Al2O3 / SiO2 / TiO2.

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