Multi-frequency amplification device

Abstract

The invention discloses a multi-frequency amplification device. The device comprises a plurality of matching networks with different frequency bands, a preceding-stage driving amplification module and an output-stage amplification module, the matching networks, the preceding-stage driving amplification module and the output-stage amplification module form a multi-band radio frequency signal channel; each frequency band radio frequency input signal correspondingly passes through each multi-frequency band radio frequency signal channel to output each frequency band radio frequency amplification signal; wherein the matching network of each frequency band realizes the required matching impedance in the respective working frequency band, and has the out-of-band rejection characteristic in other working frequency bands. According to the scheme, the multi-band ultra-large bandwidth output is realized by arranging a plurality of matching networks with different frequency bands, and the physical limitation of the bandwidth bottleneck in the prior art is broken through.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of communication technology, and in particular to a multi-frequency amplification device. Background Art

[0002] A multi-frequency amplifier is a device that can amplify within multiple frequency ranges. Compared with traditional single-frequency amplifiers, multi-frequency amplifiers have higher flexibility and adaptability, and can operate at different frequencies to meet a variety of communication and application requirements. Multi-frequency amplifiers are widely used in various modern communication systems, such as CDMA, GSM, LTE, UWB and other technologies, and are also an important part of wireless LAN applications such as WiFi, Bluetooth, Zigbee, etc. In addition, multi-frequency amplifiers are also used in miniaturized power amplifier designs, which have special practical value.

[0003] Currently in the RF front-end system of communication terminals, the bandwidth upper limit of the matching network is 25~30%, which makes it impossible for an ultra-wideband amplifier to cover all required frequency bands. The bandwidth upper limit of the matching network is physically limited and can only group adjacent frequency bands; for example, 660MHz~915MHz is called Low-band, 1710MHz~2025MHz is called Mid-band, 2300MHz~2690MHz is called High-band, and 3300MHz~5000MHz is called Ultra-high-band. Then, within each frequency band group, a relatively wideband amplifier is used to realize the signal amplification function. Summary of the invention

[0004] The present invention provides a multi-frequency amplification device, which realizes multi-frequency band ultra-large bandwidth output by setting a plurality of matching networks in different frequency bands, thus breaking through the physical limitation of the bandwidth bottleneck in the prior art.

[0005] To achieve the above objectives, an embodiment of the present invention provides a multi-frequency amplification device, which includes: a matching network of multiple different frequency bands, a pre-stage driving amplification module and an output stage amplification module;

[0006] Each of the matching networks, the pre-stage driving amplifier module and the output stage amplifier module constitutes a multi-band RF signal channel; each band RF input signal passes through each of the multi-band RF signal channels to output each band RF output signal;

[0007] The matching network of each frequency band realizes the required matching impedance in the respective working frequency band, and has out-of-band suppression characteristics in other working frequency bands.

[0008] Optionally, the pre-stage driver amplifier module includes a pre-stage driver amplifier; the output stage amplifier module includes an output stage amplifier; and the matching network includes an output matching network;

[0009] Each input end of each output matching network is connected to a multiple connection point, and the input end of the pre-stage driver amplifier receives each RF input signal; the output end of the pre-stage driver amplifier is electrically connected to the input end of the output stage amplifier; the output end of the output stage amplifier is connected to the multiple connection point; and each output end of each output matching network outputs a RF output signal of each frequency band.

[0010] Optionally, the pre-stage driver amplifier module includes a pre-stage driver amplifier; the output stage amplifier module includes an output stage amplifier; the matching network includes an input matching network;

[0011] Each input end of each input matching network receives a radio frequency input signal of each frequency band; each output end of each input matching network is connected to a multiple junction; the multiple junction is connected to the input end of the pre-stage driver amplifier; the output end of the pre-stage driver amplifier is electrically connected to the input end of the output stage amplifier; and the output end of the output stage amplifier outputs a radio frequency output signal of each frequency band.

[0012] Optionally, the pre-stage driver amplifier module includes a multi-stage pre-stage driver amplifier; the output stage amplifier module includes an output stage amplifier; and the matching network includes an inter-stage matching network;

[0013] The input end of each of the pre-stage driver amplifiers receives a radio frequency input signal of each frequency band; the output end of each of the pre-stage driver amplifiers is electrically connected to the input end of each of the inter-stage matching networks; the output end of each of the inter-stage matching networks is connected to a multiple junction; the multiple junction is connected to the input end of the output stage amplifier; and the output end of the output stage amplifier outputs a radio frequency output signal of each frequency band.

[0014] Optionally, the device further comprises: a common matching network;

[0015] The common matching network is connected between the output terminal of the output stage amplifier and the complex junction.

[0016] Optionally, the device further comprises: a plurality of first subsequent matching networks of different frequency bands;

[0017] Each of the first subsequent matching networks is correspondingly connected to each of the output matching networks.

[0018] Optionally, the output matching network includes a first frequency band output matching network and a second frequency band output matching network;

[0019] The first frequency band output matching network includes a first inductor and a first capacitor; the second frequency band output matching network includes a second inductor and a second capacitor;

[0020] The first end of the first inductor is connected to the complex junction; the second end of the first inductor is electrically connected to the first end of the first capacitor; the second end of the first capacitor is grounded; the first end of the first capacitor serves as the output end of the first frequency band output matching network;

[0021] The first end of the second capacitor is connected to the complex junction; the second end of the second capacitor is electrically connected to the first end of the second inductor; the second end of the second inductor is grounded; and the second end of the second inductor serves as the output end of the second frequency band output matching network.

[0022] Optionally, the input matching network includes a first frequency band input matching network and a second frequency band input matching network;

[0023] The first frequency band input matching network includes a third inductor and a third capacitor; the second frequency band input matching network includes a fourth inductor and a fourth capacitor;

[0024] The first end of the third inductor serves as the input end of the first frequency band input matching network, and the second end of the third inductor is connected to the complex junction; the first end of the third inductor is electrically connected to the first end of the third capacitor; and the second end of the third capacitor is grounded;

[0025] The first end of the fourth capacitor serves as the input end of the second frequency band input matching network, and the second end of the fourth capacitor is connected to the complex junction; the first end of the fourth capacitor is electrically connected to the first end of the fourth inductor; and the second end of the fourth inductor is grounded.

[0026] Optionally, the device further comprises: a multi-stage second subsequent matching network of different frequency bands;

[0027] Each of the second subsequent matching networks is correspondingly connected to each of the input matching networks.

[0028] Optionally, the inter-stage matching network includes a first frequency band inter-stage matching network and a second frequency band inter-stage matching network;

[0029] The first frequency band inter-stage matching network includes a fifth inductor and a fifth capacitor; the second frequency band inter-stage matching network includes a sixth inductor and a sixth capacitor;

[0030] The first end of the fifth inductor is connected to the output end of the first stage pre-stage driving amplifier; the second end of the fifth inductor is connected to the complex junction; the first end of the fifth inductor is electrically connected to the first end of the fifth capacitor; the second end of the fifth capacitor is grounded;

[0031] The first end of the sixth capacitor is connected to the output end of the second-stage pre-stage driving amplifier; the second end of the sixth capacitor is connected to the complex junction; the first end of the sixth capacitor is electrically connected to the first end of the sixth inductor; and the second end of the sixth inductor is grounded.

[0032] In the embodiment of the present invention, a multi-band RF signal channel is formed by each of the matching networks, the pre-stage driving amplifier module and the output stage amplifier module; since the matching network of each frequency band realizes the required matching impedance within its own working frequency band, and has an out-of-band suppression characteristic in other working frequency bands, the RF input signal of each frequency band corresponds to the output of the RF amplified signal of each frequency band through each of the multi-band RF signal channels, and thus, by setting up multiple matching networks of different frequency bands, multi-band ultra-large bandwidth output is achieved, breaking through the physical limitation of the bandwidth bottleneck in the prior art.

[0033] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0035] Figure 1 It is a structural schematic diagram of a multi-frequency amplification device provided by an embodiment of the present invention;

[0036] Figure 2 It is a specific structural schematic diagram of a multi-frequency amplification device provided by an embodiment of the present invention;

[0037] Figure 3 is a specific structural schematic diagram of another multi-frequency amplification device provided by an embodiment of the present invention;

[0038] Figure 4 is a specific structural schematic diagram of another multi-frequency amplification device provided by an embodiment of the present invention;

[0039] Figure 5 is a specific circuit diagram of a multi-frequency amplification device provided by an embodiment of the present invention;

[0040] Figure 6 is a specific structural schematic diagram of another multi-frequency amplification device provided by an embodiment of the present invention;

[0041] Figure 7is a specific circuit diagram of another multi-frequency amplifying device provided by an embodiment of the present invention;

[0042] Figure 8 is a specific structural schematic diagram of another multi-frequency amplification device provided by an embodiment of the present invention;

[0043] Fig. 9 is a specific structural schematic diagram of another multi-frequency amplification device provided by an embodiment of the present invention;

[0044] Fig.10 It is a specific circuit diagram of another multi-frequency amplifying device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0045] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0046] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0047] Figure 1 is a schematic diagram of the structure of a multi-frequency amplification device provided by an embodiment of the present invention, such as Figure 1 As shown, the multi-frequency amplification device includes: a plurality of matching networks 10 of different frequency bands, a pre-stage driving amplification module 20 and an output stage amplification module 30; each matching network 10, pre-stage driving amplification module 20 and output stage amplification module 30 constitute a multi-band RF signal channel N1, N2...; each frequency band RF input signal IN1, IN2... corresponds to each multi-band RF signal channel N1, N2... to output each frequency band RF amplification signal OUT1, OUT2,...

[0048] Among them, the pre-stage driving amplifier module 20 can play a driving role; the output stage amplifier module 30 can play an output amplification role; the pre-stage driving amplifier module 20 and the output stage amplifier module 30 can constitute an amplifier;

[0049] The matching networks 10 of different frequency bands are designed to achieve the required matching impedance in their respective working frequency bands, and have out-of-band suppression characteristics in the working frequency bands of other matching networks, and the impedance is high impedance or specific impedance. Taking the matching networks of different frequency bands including the first frequency band matching network and the second frequency band matching network as an example, that is, when the amplifier composed of the front-stage driving amplifier module 20 and the output-stage amplifier module 30 works in the first frequency band, the impedance of the second frequency band matching network in the first frequency band is high impedance or specific impedance, so that the second frequency band matching network will not affect the first frequency band matching network; when the amplifier works in the second frequency band, the impedance of the first frequency band matching network in the second frequency band is high impedance or specific impedance; so that the first frequency band matching network will not affect the second frequency band matching network; this feature is applied to each matching network, so that each matching network 10, the front-stage driving amplifier module 20 and the output-stage amplifier module 30 can constitute a multi-band RF signal channel N; in this way, each frequency band RF input signal IN1, IN2... corresponds to each multi-band RF signal channel N1, N2... outputting each frequency band RF amplified signal OUT1, OUT2,..., and the signals output by each frequency band RF amplified signal OUT1, OUT2,... do not affect each other.

[0050] In this embodiment, a multi-band RF signal channel is formed by each matching network 10, a pre-stage driving amplifier module 20 and an output stage amplifier module 30; since the matching network of each frequency band realizes the required matching impedance in its own working frequency band, and has an out-of-band suppression characteristic in other working frequency bands, the RF input signal of each frequency band is correspondingly output through each multi-band RF signal channel to output the RF amplified signal of each frequency band, so that by setting up multiple matching networks of different frequency bands, a multi-band ultra-large bandwidth output is realized, breaking through the physical limitation of the bandwidth bottleneck in the prior art. At the same time, since the signals output by the RF amplified signals OUT1, OUT2, ... of each frequency band do not affect each other, the output power and efficiency of the RF amplified signals of each frequency band are maintained.

[0051] Optionally, based on the above embodiment, the specific types of the matching networks 10 of multiple different frequency bands in the multi-frequency amplifying device, the pre-stage driving amplifying module 20 and the output stage amplifying module 30 and how to constitute the multi-band signal channel are further described; this embodiment is described by taking the matching networks of multiple different frequency bands in the multi-frequency amplifying device as the output matching network, and the output matching network, the pre-stage driving amplifying module 20 and the output stage amplifying module 30 constituting the multi-band signal channel; Figure 2 is a specific structural diagram of a multi-frequency amplification device provided by an embodiment of the present invention; Figure 2As shown, in some embodiments, the pre-stage driver amplifier module 20 includes a pre-stage driver amplifier 21; the output stage amplifier module 30 includes an output stage amplifier 31; the matching network 10 includes an output matching network 11;

[0052] The input ends of each output matching network 11 are connected to a complex junction A, the input end of the pre-stage driver amplifier 21 receives each RF input signal IN1, IN2...; the output end of the pre-stage driver amplifier 21 is electrically connected to the input end of the output stage amplifier 31; the output end of the output stage amplifier 31 is connected to the complex junction A; the output ends of each output matching network 11 output RF amplified signals OUT1, OUT2,... of each frequency band.

[0053] Each output matching network 11 realizes the required matching impedance in its own working frequency band, and has an out-of-band suppression characteristic in the working frequency band of other matching networks, and the impedance is high impedance or specific impedance. Taking each output matching network 11 including a first frequency band output matching network and a second frequency band output matching network as an example, when the front-stage driving amplifier 21 and the output stage amplifier 31 work in the first frequency band, the second frequency band output matching network presents a high impedance or a specific impedance, and the second frequency band output matching network will not affect the first frequency band output matching network. After the RF input signal of the first frequency band is amplified by the front-stage driving amplifier 21 and the output stage amplifier 31, it is directly fed into the first frequency band output matching network to output the RF amplified signal of the first frequency band; when the front-stage driving amplifier 21 and the output stage amplifier 31 work in the second frequency band, the first frequency band output matching network presents a high impedance or a specific impedance, and the first frequency band output matching network will not affect the second frequency band output matching network. After the RF input signal of the second frequency band is amplified by the front-stage driving amplifier 21 and the output stage amplifier 31, it is directly fed into the second frequency band output matching network to output the RF amplified signal of the second frequency band; and so on, multiple output matching networks of different frequency bands are set to achieve multi-band ultra-large bandwidth output, and the flexibility of broadband widening is high, breaking through the physical limitations of the bandwidth bottleneck in the prior art. At the same time, since the signals output by the radio frequency amplified signals OUT1, OUT2, ... of each frequency band do not affect each other, the output power and efficiency of the radio frequency amplified signals of each frequency band are maintained.

[0054] It should be noted that in this embodiment, the output end of the output stage amplifier 31 is connected to each output matching network through the multiple connection point A, which avoids the use of a signal selection switch to connect the output end of the output stage amplifier 31 to each output matching network in the prior art. The use of the multiple connection point further improves the output power and efficiency of the RF amplified signal in each frequency band. Figure 2 Further optimization based on the embodiment, Figure 3 is a specific structural diagram of another multi-frequency amplifying device provided by an embodiment of the present invention; Figure 3As shown, the multi-frequency amplification device further includes: a common matching network 40; the common matching network 40 is connected between the output end of the output stage amplifier 31 and the multiple connection point A. The common matching network 40 is arranged before the multiple connection point A, and the bandwidth of the common matching network 40 can cover each frequency band, so that the multi-band ultra-large bandwidth output can be achieved through the common matching network 40 and each output matching network, and the output power and efficiency of the RF amplified signal of each frequency band can be improved at the same time.

[0055] Optional, in the above Figure 2 Further optimization based on the embodiment, Figure 4 is a specific structural diagram of another multi-frequency amplifying device provided by an embodiment of the present invention; Figure 4 As shown, the multi-frequency amplification device further includes: a plurality of first subsequent matching networks 50 of different frequency bands; each first subsequent matching network 50 is connected to each output matching network 11. Each first subsequent matching network 50 can be connected after each output matching network 11. Since the first subsequent matching network 50 has little influence on the corresponding output matching network 11 after the impedance constraint condition of the corresponding output matching network 11 is met, the matching impedance restriction of the first subsequent matching network 50 is relatively small.

[0056] The matching impedance of each output matching network is described below with a specific circuit structure diagram; Figure 5 is a specific circuit diagram of a multi-frequency amplifying device provided by an embodiment of the present invention; Figure 5 As shown, the input matching network 11 includes a first-band input matching network 111 and a second-band input matching network 112; the first-band input matching network 111 includes a first inductor L1 and a first capacitor C1; the second-band input matching network 112 includes a second inductor L2 and a second capacitor C2; the first end of the first inductor L1 is connected to the complex junction A; the second end of the first inductor L1 is electrically connected to the first end of the first capacitor C1; the second end of the first capacitor C1 is grounded; the first end of the first capacitor C1 serves as the output end of the first-band output matching network 111; the first end of the second capacitor C2 is connected to the complex junction A; the second end of the second capacitor C2 is electrically connected to the first end of the second inductor L2; the second end of the second inductor L2 is grounded; the second end of the second inductor L2 serves as the output end of the second-band output matching network 112.

[0057] Specifically, the first frequency band output matching network 111 composed of the first inductor L1 and the first capacitor C1 is the first frequency band (low frequency band) output matching network; the second frequency band (high frequency band) output matching network 111 composed of the second inductor L2 and the second capacitor C2 is the high frequency band matching network; when the first frequency band is working, from the multiple connection point A to the second frequency band output matching network, the first element is the second capacitor C2, whose frequency response is high pass, and presents a high impedance characteristic in the first frequency band. When the second frequency band is working, from the multiple connection point A to the first frequency band output matching network, the first element is the first inductor L1 connected in series, whose frequency response is low pass, and presents a high impedance characteristic in the second frequency, so that the RF amplified signals of each frequency band output by the two output matching networks do not affect each other. Of course, it can be understood that the output matching network of each frequency band can also change the impedance matching size through other topological structures (LLC topological structures) or by changing the size of internal parameters, and this embodiment does not specifically limit this.

[0058] It can also be understood that the frequency response characteristic combination of the first frequency band output matching network 111 and the second frequency band output matching network 112 can be low pass + band pass; high pass + band pass; band pass + band pass, etc., in addition to the low pass + high pass combination in the above embodiment, and this embodiment does not make any specific limitation on this.

[0059] Optionally, in some other embodiments, the matching networks 10 of multiple different frequency bands in the multi-frequency amplification device can also be used as input matching networks, and the input matching network, the pre-stage driving amplifier module 20 and the output stage amplifier module 30 can also constitute a multi-band signal channel; Figure 6 is a specific structural diagram of another multi-frequency amplifying device provided by an embodiment of the present invention; Figure 6 As shown, the pre-stage driver amplifier module 20 includes a pre-stage driver amplifier 21; the output stage amplifier module 30 includes an output stage amplifier 31; the matching network 11 includes an input matching network 12;

[0060] Each input end of each input matching network 12 receives a radio frequency input signal IN1, IN2, ... of each frequency band; each output end of each input matching network 12 is connected to a complex junction B; the complex junction B is connected to the input end of the pre-stage driver amplifier 21; the output end of the pre-stage driver amplifier 21 is electrically connected to the input end of the output stage amplifier 31; the output end of the output stage amplifier 31 outputs a radio frequency amplified signal OUT1, OUT2, ... of each frequency band.

[0061] Among them, each input matching network 12 is to achieve the required matching impedance within its own working frequency band, and has an out-of-band suppression characteristic within the working frequency band of other matching networks, and the impedance is high impedance or specific impedance. Taking each input matching network 12 including a first-band input matching network and a second-band input matching network as an example, when the first-band RF signal is input, the second-band input matching network presents a high impedance or a specific impedance, and the second-band input matching network will not affect the first-band input matching network. The RF input signal of the first band is directly fed into the first-band output matching network, and then amplified by the pre-stage driving amplifier 21 and the output stage amplifier 31, the RF amplified signal of the first band is output; this embodiment also realizes multi-band ultra-large bandwidth output by setting multiple input matching networks of different frequency bands, and the flexibility of broadband widening is high, breaking through the physical limitation of the bandwidth bottleneck in the prior art. At the same time, since the signals output by the RF amplified signals OUT1, OUT2, ... of each frequency band do not affect each other, the output power and efficiency of the RF amplified signals of each frequency band are maintained.

[0062] It should be further explained that in this embodiment, the input end of the pre-stage driver amplifier 21 is connected via the multiple junction B, thereby avoiding the use of a signal selection switch connected to the input end of the pre-stage driver amplifier 21 in the prior art. The use of the multiple junction also further improves the output power and efficiency of the RF amplified signals in each frequency band.

[0063] Optional, in the above Figure 6 Based on the embodiment, the input matching network 121 of each frequency band is further described with a specific circuit diagram; Figure 7 is a schematic diagram of a specific circuit structure of another multi-frequency amplifying device provided by an embodiment of the present invention; Figure 7 As shown, the input matching network 12 includes a first-band input matching network 121 and a second-band input matching network 122; the first-band input matching network 121 includes a third inductor L3 and a third capacitor C3; the second-band input matching network 122 includes a fourth inductor L4 and a fourth capacitor C4; the first end of the third inductor L3 serves as the input end of the first-band input matching network 121, and the second end of the third inductor L3 is connected to the complex junction B; the first end of the third inductor L3 is electrically connected to the first end of the third capacitor C3; the second end of the third capacitor C3 is grounded; the first end of the fourth capacitor C4 serves as the input end of the second-band input matching network 122, and the second end of the fourth capacitor C4 is connected to the complex junction B; the first end of the fourth capacitor C4 is electrically connected to the first end of the fourth inductor L4; the second end of the fourth inductor L4 is grounded.

[0064] Specifically, the first frequency band input matching network 111 composed of the third inductor L3 and the third capacitor C3 is a first frequency band (low frequency band) matching network; the second frequency band (high frequency band) input matching network 111 composed of the fourth inductor L4 and the fourth capacitor C4 is a high frequency band matching network; in this way, the RF amplified signals of each frequency band output by the two input matching networks do not affect each other. Of course, it can be understood that the input matching networks of each frequency band can also change the impedance matching size through other topological structures (LLC topological structures) or by changing the size of internal parameters, and this embodiment does not specifically limit this.

[0065] It can also be understood that the frequency response characteristic combination of the first frequency band input matching network 121 and the second frequency band input matching network 1222 can be low pass + band pass; high pass + band pass; band pass + band pass, etc., in addition to the low pass + high pass combination in the above embodiment, and this embodiment does not make any specific limitation on this.

[0066] Optional, in the above Figure 6 Based on the embodiment, further optimization is performed. Figure 8 is a specific structural diagram of another multi-frequency amplifying device provided by an embodiment of the present invention; Figure 8 As shown, the multi-frequency amplification device further includes: multi-stage input second subsequent matching networks 60 of different frequency bands; each second subsequent matching network 60 is correspondingly connected to each input matching network 12. Similarly, since the impedance matching of the input matching network meets the conditions, the matching impedance conditions of the second subsequent matching network are not limited.

[0067] Optionally, in some other embodiments, the matching networks 10 of multiple different frequency bands in the multi-frequency amplification device can also be used as inter-stage matching networks, and the pre-stage driving amplifier module 20, the inter-stage matching networks and the output stage amplifier module 30 constitute a multi-band signal channel for illustration; Fig. 9 is a specific structural diagram of another multi-frequency amplifying device provided by an embodiment of the present invention; Fig. 9 As shown, the pre-stage driver amplifier module 20 includes a multi-stage pre-stage driver amplifier 21; the output stage amplifier module 30 includes an output stage amplifier 31; the matching network 11 includes an inter-stage matching network 13; the input end of each pre-stage driver amplifier 21 receives the RF input signal IN1, IN2... of each frequency band; the output end of each pre-stage driver amplifier 21 is electrically connected to the input end of the inter-stage matching network 13 corresponding to each stage; the output end of each inter-stage matching network 13 is connected to a complex junction C; the complex junction C is connected to the input end of the output stage amplifier 31; the output end of the output stage amplifier 31 outputs the RF amplified signal OUT1, OUT2,... of each frequency band.

[0068] Among them, the inter-stage matching network 13 realizes the required matching impedance in each working frequency band, and has an out-of-band suppression characteristic in the working frequency band of other matching networks, and the impedance is high impedance or specific impedance. Taking the inter-stage matching network 13 including the first frequency band inter-stage matching network and the second frequency band inter-stage matching network as an example, when the first frequency band RF signal is input, the second frequency band inter-stage matching network presents high impedance or specific impedance, and the RF input signal of the first frequency band is directly fed into the corresponding pre-stage driving amplifier 21 and the first frequency band inter-stage matching network 13, and the first frequency band RF amplified signal is output after passing through the output stage amplifier 31; when the second frequency band RF signal is input, the first frequency band inter-stage matching network presents high impedance or specific impedance, and the RF input signal of the second frequency band is directly fed into the corresponding pre-stage driving amplifier 21 and the second frequency band inter-stage matching network 13, and the second frequency band RF amplified signal is output after passing through the output stage amplifier 31; and so on, setting multiple inter-stage matching networks of different frequency bands also realizes multi-band ultra-large bandwidth output.

[0069] In addition, when the first-band RF signal is fed into the corresponding front-stage driving amplifier and the first-band inter-stage matching network, the first-band RF primary amplified signal is output, because the second-band inter-stage matching network presents high impedance or specific impedance, the second-band input matching network will not affect the first-band input matching network. In this way, when the first-band RF primary amplified signal is amplified again by the rear-stage driving amplifier and the first-band RF amplified signal is output, the output power and efficiency of the first-band RF amplified signal are achieved. By analogy, the output power and efficiency of the RF amplified signals of each frequency band are also achieved.

[0070] It should be further explained that in this embodiment, the input end of the output stage amplifier 31 is connected via the multiple junction C, thereby avoiding the use of a signal selection switch connected to the input end of the output stage amplifier 31 in the prior art. The use of the multiple junction further improves the output power and efficiency of the RF amplified signals in each frequency band.

[0071] Optional, in the above Fig. 9 Based on the embodiment, the inter-stage matching network 13 of each frequency band is further described with a specific circuit diagram; Fig.10 is a specific circuit diagram of another multi-frequency amplifying device provided by an embodiment of the present invention; Fig.10As shown, the inter-stage matching network 13 includes a first-band inter-stage matching network 131 and a second-band inter-stage matching network 132; the first-band inter-stage matching network 131 includes a fifth inductor L5 and a fifth capacitor C5; the second-band inter-stage matching network 132 includes a sixth inductor L6 and a sixth capacitor C6; the first end of the fifth inductor L5 is connected to the output end of the first-stage pre-stage driver amplifier 211; the second end of the fifth inductor L5 is connected to the complex junction C; the first end of the fifth inductor L5 is electrically connected to the first end of the fifth capacitor C5; the second end of the fifth capacitor C5 is grounded; the first end of the sixth capacitor C6 is connected to the output end of the second-stage pre-stage driver amplifier 212; the second end of the sixth capacitor C6 is connected to the complex junction C; the first end of the sixth capacitor C6 is electrically connected to the first end of the sixth inductor L6; the second end of the sixth inductor L6 is grounded.

[0072] Specifically, the first frequency band inter-stage matching network 131 composed of the fifth inductor L5 and the fifth capacitor C5 is a first frequency band (low frequency band) inter-stage matching network; the second frequency band (high frequency band) inter-stage matching network 132 composed of the sixth inductor L6 and the sixth capacitor C6 is a high frequency band matching network; in this way, the RF amplified signals of each frequency band output by the two inter-stage matching networks do not affect each other. Of course, it can be understood that the inter-stage matching networks of each frequency band can also change the impedance matching size through other topological structures (LLC topological structures) or by changing the size of internal parameters, and this embodiment does not make specific limitations on this.

[0073] It can also be understood that the frequency response characteristic combination of the first frequency band inter-stage matching network 131 and the second frequency band inter-stage matching network 132 can be low pass + band pass; high pass + band pass; band pass + band pass, etc., in addition to the low pass + high pass combination in the above embodiment, and this embodiment does not make any specific limitation on this.

[0074] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A multi-frequency amplification device, characterized in that: include: Matching networks, pre-stage driver amplifier modules and output stage amplifier modules for multiple frequency bands; Each of the matching networks, the pre-stage driving amplifier module and the output stage amplifier module constitutes a multi-band RF signal channel; each band RF input signal passes through each of the multi-band RF signal channels to output each band RF output signal; The matching network of each frequency band realizes the required matching impedance in the respective working frequency band, and has out-of-band suppression characteristics in other working frequency bands.

2. The multi-frequency amplification device according to claim 1, characterized in that: The pre-stage driving amplifier module includes a pre-stage driving amplifier; the output stage amplifier module includes an output stage amplifier; the matching network includes an output matching network; Each input end of each output matching network is connected to a multiple connection point, and the input end of the pre-stage driver amplifier receives each RF input signal; the output end of the pre-stage driver amplifier is electrically connected to the input end of the output stage amplifier; the output end of the output stage amplifier is connected to the multiple connection point; and each output end of each output matching network outputs a RF output signal of each frequency band.

3. The multi-frequency amplification device according to claim 1, characterized in that: The pre-stage driver amplifier module includes a pre-stage driver amplifier; the output stage amplifier module includes an output stage amplifier; the matching network includes an input matching network; Each input end of each input matching network receives a radio frequency input signal of each frequency band; each output end of each input matching network is connected to a multiple connection point; The multiple junction is connected to the input end of the pre-stage driving amplifier; the output end of the pre-stage driving amplifier is electrically connected to the input end of the output stage amplifier; and the output end of the output stage amplifier outputs radio frequency output signals of various frequency bands.

4. The multi-frequency amplification device according to claim 1, characterized in that: The pre-stage driver amplifier module includes a multi-stage pre-stage driver amplifier; the output stage amplifier module includes an output stage amplifier; the matching network includes an inter-stage matching network; The input end of each of the pre-stage driving amplifiers receives a radio frequency input signal of each frequency band; the output end of each of the pre-stage driving amplifiers is electrically connected to the input end of each of the inter-stage matching networks; the output end of each of the inter-stage matching networks is connected to a multiple connection point; The multiple connection point is connected to the input end of the output stage amplifier; the output end of the output stage amplifier outputs radio frequency output signals of various frequency bands.

5. The multi-frequency amplification device according to claim 2, characterized in that: Also includes: Public matching network; The common matching network is connected between the output terminal of the output stage amplifier and the complex junction.

6. The multi-frequency amplification device according to claim 2, characterized in that: Also includes: A first subsequent matching network for a plurality of different frequency bands; Each of the first subsequent matching networks is correspondingly connected to each of the output matching networks.

7. The multi-frequency amplification device according to claim 2, characterized in that: The output matching network includes a first frequency band output matching network and a second frequency band output matching network; The first frequency band output matching network includes a first inductor and a first capacitor; the second frequency band output matching network includes a second inductor and a second capacitor; The first end of the first inductor is connected to the complex junction; the second end of the first inductor is electrically connected to the first end of the first capacitor; the second end of the first capacitor is grounded; the first end of the first capacitor serves as the output end of the first frequency band output matching network; The first end of the second capacitor is connected to the complex junction; the second end of the second capacitor is electrically connected to the first end of the second inductor; the second end of the second inductor is grounded; and the second end of the second inductor serves as the output end of the second frequency band output matching network.

8. The multi-frequency amplifying device according to claim 3, characterized in that: The input matching network includes a first frequency band input matching network and a second frequency band input matching network; The first frequency band input matching network includes a third inductor and a third capacitor; the second frequency band input matching network includes a fourth inductor and a fourth capacitor; The first end of the third inductor serves as the input end of the first frequency band input matching network, and the second end of the third inductor is connected to the complex junction; the first end of the third inductor is electrically connected to the first end of the third capacitor; and the second end of the third capacitor is grounded; The first end of the fourth capacitor serves as the input end of the second frequency band input matching network, and the second end of the fourth capacitor is connected to the complex junction; the first end of the fourth capacitor is electrically connected to the first end of the fourth inductor; and the second end of the fourth inductor is grounded.

9. The multi-frequency amplification device according to claim 3, characterized in that: Also includes: Multi-stage second subsequent matching networks for different frequency bands; Each of the second subsequent matching networks is correspondingly connected to each of the input matching networks.

10. The multi-frequency amplifying device according to claim 4, characterized in that: The inter-stage matching network includes a first frequency band inter-stage matching network and a second frequency band inter-stage matching network; The first frequency band inter-stage matching network includes a fifth inductor and a fifth capacitor; the second frequency band inter-stage matching network includes a sixth inductor and a sixth capacitor; The first end of the fifth inductor is connected to the output end of the first stage pre-stage driving amplifier; the second end of the fifth inductor is connected to the complex junction; the first end of the fifth inductor is electrically connected to the first end of the fifth capacitor; the second end of the fifth capacitor is grounded; The first end of the sixth capacitor is connected to the output end of the second-stage pre-stage driving amplifier; the second end of the sixth capacitor is connected to the complex junction; the first end of the sixth capacitor is electrically connected to the first end of the sixth inductor; and the second end of the sixth inductor is grounded.

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