Dual channel millimeter wave transmitter, receiver and transceiver system
The innovative design of the dual-channel millimeter-wave transceiver solves the performance bottleneck of traditional single-channel transceivers in wideband applications, achieves efficient signal processing and ultra-wideband coverage, supports high-order modulation, and is suitable for modern communication systems.
Patent Information
- Application Number
- CN202411645394.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-15
- Publication Date
- 2025-10-10
- Estimated Expiration
- 2044-11-15
AI Technical Summary
Traditional single-channel transceivers have performance bottlenecks in wideband applications, making it difficult to simultaneously ensure high output power and good linearity or high sensitivity and excellent linearity, limiting the development of high-speed communication systems.
It adopts a dual-channel millimeter-wave transmitter and receiver design, optimizes signal processing in each frequency band through frequency division processing and selective switching of high and low frequency channels, combined with multi-stage fully differential common-source amplifiers, common-source common-gate amplifiers, signal synthesis switch circuits and variable gain amplifiers.
It significantly improves the system's linearity and power efficiency, supports high-order modulation methods, and achieves ultra-wideband coverage, making it suitable for current 5G and future 6G communication systems.
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Figure CN119543972B_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of radio frequency / millimeter wave / terahertz integrated circuits, and in particular to a dual-channel millimeter wave transmitter, receiver, and transceiver system. Background Art
[0002] In today's era of high-speed communications, the rapid development of wireless communication technology is driving an increasing demand for high data rates and spectral efficiency. Advances in radio frequency (RF), millimeter wave (mmWave), and terahertz (THz) integrated circuit technologies are enabling the development of higher-frequency, wider-bandwidth communication systems. These high-frequency communication systems play a crucial role in 5G and future 6G networks, driving high-speed data transmission and massive connectivity.
[0003] Traditional transceivers mostly use a superheterodyne architecture, but due to its complex structure and high power consumption, it is gradually being replaced by a direct conversion architecture. Direct conversion architectures simplify system structure, reduce power consumption, and improve spectrum utilization by directly modulating baseband signals onto RF signals (transmission) or converting RF signals directly to baseband (reception). However, direct conversion transceivers operating in high-frequency bands still face many challenges:
[0004] Traditional single-channel transmitters have the following challenges: Broadband coverage often requires increasing the power amplifier's bandwidth, which reduces efficiency and linearity. Furthermore, when processing high-frequency signals, it's difficult to strike a balance between high output power and good linearity, limiting the ability to handle high-order modulated signals.
[0005] Traditional single-channel receivers face similar limitations: To cover a wide frequency band, the bandwidth of the low-noise amplifier must be increased, which results in an increase in noise figure and a decrease in linearity. Furthermore, when processing high-frequency signals, it is difficult to strike a balance between high sensitivity and good linearity, which affects signal reception quality.
[0006] In summary, existing transceivers commonly face performance bottlenecks in broadband applications. Especially when supporting high-order modulation schemes, transmitters struggle to simultaneously maintain high output power and good linearity, while receivers struggle to achieve both high sensitivity and excellent linearity. These issues severely hinder the development of high-speed communication systems, necessitating a new technical solution. Summary of the Invention
[0007] The disclosed embodiments propose a dual-channel millimeter-wave transmitter, receiver, and transceiver system that can effectively resolve the performance bottleneck problem of traditional single-channel structures in wideband applications through frequency division processing and selective switching of high and low frequency channels, and significantly improve the linearity and power efficiency of the system.
[0008] According to one embodiment of the present disclosure, a dual-channel millimeter wave transmitter is proposed, including a baseband signal processing circuit, a local oscillator signal processing circuit, and a radio frequency front-end circuit, wherein:
[0009] The baseband signal processing circuit is used to receive a baseband signal;
[0010] The local oscillator signal processing circuit is used to provide a local oscillator signal to the radio frequency front-end circuit;
[0011] The radio frequency front-end circuit comprises:
[0012] A mixer, configured to up-convert the baseband signal output by the baseband signal processing circuit into a high-frequency signal and a low-frequency signal under the action of a local oscillator signal;
[0013] A high-frequency channel power amplifier receives the high-frequency signal output by the mixer, wherein the high-frequency channel power amplifier includes a multi-stage fully differential common-source amplifier, and each stage is connected through a transformer matching network;
[0014] a low-frequency channel power amplifier, receiving the low-frequency signal output by the mixer, wherein the low-frequency channel power amplifier includes at least one stage of common-source amplifier; and
[0015] The signal synthesis switch circuit is connected to the output ends of the high-frequency channel power amplifier and the low-frequency channel power amplifier, and is used to selectively output the output signal of the high-frequency channel power amplifier or the low-frequency channel power amplifier when working in different frequency bands.
[0016] In some embodiments, the mixer includes a switch tube, and the RF front-end circuit further includes a current regulation circuit connected to the mixer, wherein the current regulation circuit is used to adjust the mismatch of the switch tube in the mixer.
[0017] In some embodiments, the signal synthesis switch circuit includes a plurality of switch tubes for selectively conducting the output signal of the high-frequency channel power amplifier or the low-frequency channel power amplifier according to an operating frequency control signal.
[0018] In some embodiments, the high-frequency channel power amplifier includes an automatic frequency locking circuit for achieving frequency locking of the high-frequency channel power amplifier.
[0019] In some embodiments, the RF front-end circuit further includes a power synthesis circuit disposed between the mixer and the high-frequency channel power amplifier.
[0020] In some embodiments, the local oscillator signal processing circuit includes a high-frequency local oscillator signal generating circuit and a low-frequency local oscillator signal generating circuit, which are respectively used to up-convert the signals of the high-frequency channel and the low-frequency channel.
[0021] In some embodiments, the high-frequency channel power amplifier includes a three-stage fully differential common-source amplifier, and / or the low-frequency channel power amplifier includes a two-stage common-source amplifier.
[0022] According to one embodiment of the present disclosure, a dual-channel millimeter wave receiver is proposed, including a radio frequency front-end circuit, a local oscillator signal processing circuit, and a baseband signal processing circuit, wherein:
[0023] The RF front-end circuit includes a signal distribution switch circuit, a high-frequency channel low-noise amplifier, a low-frequency channel low-noise amplifier and a mixer, wherein:
[0024] The signal distribution switch circuit is used to selectively transmit the input radio frequency signal to the high-frequency channel low-noise amplifier or the low-frequency channel low-noise amplifier when operating in different frequency bands;
[0025] The high-frequency channel low-noise amplifier includes a multi-stage cascode amplifier;
[0026] The low-frequency channel low-noise amplifier includes at least one stage of common-source amplifier; and
[0027] The mixer is connected to the output ends of the high-frequency channel low-noise amplifier and the low-frequency channel low-noise amplifier respectively, and receives the local oscillator signal provided by the local oscillator signal processing circuit to down-convert the radio frequency signal into a baseband signal;
[0028] The local oscillator signal processing circuit is used to provide a local oscillator signal to the mixer; and
[0029] The baseband signal processing circuit is connected to the output end of the mixer and is used to output the baseband signal. The baseband signal processing circuit includes a variable gain amplifier.
[0030] In some embodiments, the local oscillator signal processing circuit includes a high-frequency local oscillator signal generating circuit and a low-frequency local oscillator signal generating circuit, which are respectively used to down-convert the signals of the high-frequency channel and the low-frequency channel.
[0031] In some embodiments, the variable gain amplifier is configured to dynamically adjust the gain according to the strength of the input signal.
[0032] In some embodiments, the low-frequency channel low-noise amplifier includes an adjustable active balun circuit for converting a single-ended signal into a differential signal.
[0033] In some embodiments, the RF front-end circuit includes a matching network disposed before the high-frequency channel low-noise amplifier and the low-frequency channel low-noise amplifier.
[0034] In some embodiments, L-type matching and transformer matching are used between stages of the multi-stage cascode amplifier in the high-frequency channel low-noise amplifier.
[0035] In some embodiments, the high-frequency channel low-noise amplifier includes a two-stage cascode amplifier, and / or the low-frequency channel low-noise amplifier includes a three-stage common-source amplifier.
[0036] According to an embodiment of the present disclosure, a dual-channel millimeter wave transceiver system is also proposed, and the dual-channel millimeter wave transceiver system includes the transmitter as described above and the receiver as described above.
[0037] The dual-channel architecture proposed in this publication enables the transmitter / receiver to achieve ultra-wideband coverage. Through the division of labor between high- and low-frequency channels, each channel is optimized for a specific frequency band, covering multiple frequency bands from L-band to Ka-band, meeting the needs of various communication standards and application scenarios.
[0038] The dual-channel millimeter-wave transmitter proposed in this disclosure utilizes a multi-stage fully differential common-source amplifier in the high-frequency channel and at least one common-source amplifier in the low-frequency channel, combined with the selective output of a signal synthesis switch circuit. This ensures high output power while maintaining excellent linearity. The current regulation circuit in the baseband processing circuit effectively addresses the mismatch issue of the mixer switches, further optimizing system performance.
[0039] The dual-channel millimeter-wave receiver proposed in this disclosure utilizes a combination of a multi-stage cascode amplifier in the high-frequency channel and at least one stage of a common-source amplifier in the low-frequency channel, coupled with a signal distribution switch circuit. This achieves excellent noise and linearity performance, with a noise figure below 6dB across the entire frequency band and a third-order intercept point (IIP3) greater than 0dBm. Dynamic adjustment of the variable-gain amplifier effectively expands the system's dynamic range.
[0040] The transmitter and receiver proposed in the embodiments of the present disclosure adopt a unified concept, which facilitates integration into a complete transceiver system. The integrated transceiver system not only has the above advantages, but also can further optimize the system's resource utilization and improve overall integration through the shared local oscillator signal design.
[0041] The various performance improvements of the various embodiments of this disclosure enable them to effectively support the high-performance requirements of modern communication systems. They are not only applicable to current 5G communications, but also provide a solid technical foundation for upcoming 6G and higher frequency communication systems. BRIEF DESCRIPTION OF THE DRAWINGS
[0042] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the specification and, together with the description, serve to explain the principles of the specification.
[0043] Figure 1 A structural block diagram of a dual-channel millimeter wave transmitter according to an embodiment of the present disclosure is shown;
[0044] Figure 2 shows a schematic diagram of a TX architecture according to an exemplary embodiment of the present disclosure;
[0045] Figure 3 A schematic diagram of a radio frequency front-end circuit of a dual-channel millimeter wave transmitter according to an exemplary embodiment of the present disclosure is shown;
[0046] Figure 4 A structural block diagram of a dual-channel millimeter wave receiver according to an embodiment of the present disclosure is shown;
[0047] Figure 5 shows a schematic diagram of an RX architecture according to an exemplary embodiment of the present disclosure;
[0048] Figure 6 A schematic diagram of a radio frequency front-end circuit of a dual-channel millimeter wave receiver according to an exemplary embodiment of the present disclosure is shown. DETAILED DESCRIPTION
[0049] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all possible embodiments consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.
[0050] See also Figure 1 As shown, according to one embodiment of the present disclosure, a dual-channel millimeter wave transmitter is provided, which adopts a direct frequency conversion architecture design. As shown in the figure, the dual-channel millimeter wave transmitter includes a baseband signal processing circuit 11, a local oscillator signal processing circuit 12 and a radio frequency front-end circuit 13.
[0051] The baseband signal processing circuit 11 is used to receive a baseband signal. The local oscillator signal processing circuit 12 is used to provide a local oscillator signal to the radio frequency front-end circuit 13.
[0052] The RF front-end circuit 13 includes a mixer 134 , a high-frequency channel power amplifier 131 , a low-frequency channel power amplifier 132 , and a signal synthesis switch circuit 133 .
[0053] The mixer 134 is used to up-convert the baseband signal output by the baseband signal processing circuit 11 into a high-frequency signal and a low-frequency signal under the action of the local oscillator signal.
[0054] High-frequency channel power amplifier 131 receives the high-frequency signal from the RF signal output by mixer 134. High-frequency channel power amplifier 131 comprises multiple fully differential common-source amplifier stages, each connected via a transformer matching network. Low-frequency channel power amplifier 132 receives the low-frequency signal from the RF signal output by mixer 134. Low-frequency channel power amplifier 132 comprises at least one common-source amplifier stage.
[0055] The signal synthesis switch circuit 133 is connected to the output ends of the high frequency channel power amplifier 131 and the low frequency channel power amplifier 132, and is used to selectively output the output signal of the high frequency channel power amplifier 131 or the low frequency channel power amplifier 132 when working in different frequency bands.
[0056] Existing millimeter-wave transmitters mostly use a single-channel architecture, which limits their wideband coverage. To achieve wider bandwidth coverage, the power amplifier's bandwidth often needs to be increased, which reduces its efficiency and linearity. Furthermore, when processing high-frequency signals, traditional single-channel transmitters struggle to strike a balance between high output power and good linearity.
[0057] like Figure 1 The transmitter's RF front-end circuit 13 uses an innovative dual-channel architecture. This dual-channel design enables the transmitter to flexibly select the optimal signal processing channel based on the operating frequency band, overcoming the performance bottleneck of a single-channel structure in wideband applications.
[0058] In the RF front-end circuit 13, the high-frequency channel power amplifier 131 adopts a multi-stage fully differential common-source amplifier structure, and adjacent stages are connected through a transformer matching network. The multi-stage fully differential common-source amplifier can meet the requirements of high gain or high linearity at the same time. The fully differential common-source amplifier is conducive to suppressing common-mode noise and improving anti-interference ability, which is particularly important in the high-frequency band, and is also conducive to improving the linearity of the power amplifier and providing a larger output swing. Through the cooperation of the transformer matching network between each stage, the impedance matching can be optimized step by step, the power transmission efficiency can be improved, and the high-frequency performance can be further improved. In some embodiments, the high-frequency channel power amplifier 131 can adopt a three-stage fully differential common-source amplifier structure. After extensive research, the inventor believes that the total gain can be reasonably distributed through three-stage amplification, and the gain of each stage is moderate, avoiding the stability problem caused by excessive gain of a single stage, and is more conducive to obtaining sufficient gain in the high-frequency band while maintaining good linearity.
[0059] The low-frequency channel power amplifier 132 may include at least one common-source amplifier stage. In some embodiments, the low-frequency channel power amplifier may include two common-source amplifier stages. After extensive research, the inventors believe that low-frequency signal processing is less challenging than high-frequency channels, and that a two-stage structure can achieve a good balance between optimizing noise performance, providing power gain, and reducing circuit complexity, cost, and power consumption.
[0060] Signal synthesis switch circuit 133 connects the outputs of power amplifiers 131 and 132 and dynamically selects the appropriate output channel based on the operating frequency band, achieving optimal power output. This dynamic selection mechanism ensures that the transmitter always operates optimally, ensuring optimal output performance across different frequency bands. This is particularly important for supporting high-order modulation schemes such as 16QAM and 1024QAM.
[0061] In some embodiments, the baseband signal processing circuit 11 may receive four IQ differential input signals.
[0062] In some implementations, the local oscillator signal processing circuit generates a high-frequency local oscillator signal and a low-frequency local oscillator signal, and up-converts the signals of the high-frequency channel and the low-frequency channel, respectively.
[0063] In some embodiments, the mixer includes a switch tube, and the RF front-end circuit further includes a current regulation circuit connected to the mixer, wherein the current regulation circuit is used to adjust the mismatch of the switch tube in the mixer.
[0064] In millimeter wave transmitters, the performance of the mixer directly affects the linearity and spectral purity of the system. In traditional mixer designs, due to imperfections in the process and differences in the characteristics of the devices themselves, there is often a mismatch problem in the switch tubes. This mismatch can lead to problems such as increased carrier leakage and destruction of sideband balance. According to this embodiment, a current regulation circuit is innovatively introduced into the mixer. For example, the mixer can adopt a passive mixing structure, including multiple switch tubes for modulating the baseband signal onto the radio frequency carrier. The switch tubes can be arranged in the form of differential pairs. The current regulation circuit can be connected to the differential pair of the switch tubes of the mixer, and compensate for the characteristic differences between the switch tubes by adjusting the current flowing through each switch tube.
[0065] By introducing a current regulation circuit into the mixer design, carrier leakage can be significantly improved, sideband balance can be improved, and the nonlinear distortion of the mixer can be reduced, which is beneficial to the processing of high-order modulated signals. It can also adapt to changes in temperature and working conditions through dynamic adjustment. At the same time, the design is simple and maintains a high degree of integration.
[0066] In some embodiments, the signal synthesis switch circuit includes a plurality of switch tubes for selectively conducting the output signal of the high-frequency channel power amplifier or the low-frequency channel power amplifier according to an operating frequency control signal.
[0067] Signal synthesis switching circuit 133 is located at the output of high-frequency channel power amplifier 131 and low-frequency channel power amplifier 132. This circuit uses a combination of multiple switching transistors to selectively conduct the output signals of the two channels. Depending on the operating frequency, the system generates corresponding control signals to ensure the optimal signal path is selected in each frequency band.
[0068] According to this embodiment, the selective conduction mechanism is used to achieve efficient transmission of signals in different frequency bands, thereby avoiding mutual interference between signals in the two channels and enabling the system to always operate in an optimal state.
[0069] In some embodiments, the high-frequency channel power amplifier includes an automatic frequency locking circuit for achieving frequency locking of the high-frequency channel power amplifier.
[0070] An automatic frequency locking circuit (AFL) may be provided in the high-frequency channel power amplifier 131 and connected in cascade to the high-frequency channel power amplifier 131. During the high-frequency signal amplification process, the automatic frequency locking circuit is used to monitor and adjust the operating frequency of the high-frequency channel power amplifier 131 to ensure that the system can operate stably in the high-frequency band, thereby improving the frequency stability of the high-frequency channel and ensuring that the power amplifier operates at the optimal frequency point.
[0071] In some embodiments, the RF front-end circuit further includes a power synthesis circuit disposed between the mixer and the high-frequency channel power amplifier.
[0072] According to this embodiment, the signals output by the mixer are synthesized by the power synthesis circuit and then transmitted to the high-frequency channel power amplifier, thereby further optimizing the signal transmission of the high-frequency channel and improving the power transmission efficiency.
[0073] Figure 2 FIG. 1 shows a schematic diagram of a TX architecture according to an exemplary embodiment of the present disclosure. Figure 2As shown, the TX chip includes four baseband input interfaces, TX_IN. Each input signal passes through attenuator ATT and is connected to a 3 / 20 / 40 frequency divider circuit to accommodate different frequency bands. The local oscillator (LO) input is processed and divided into two local oscillator (LO) signals, HF_LO and LF_LO. These signals are then fed through a distribution network to different mixers. The baseband and LO signals are fed into four symmetrically arranged I / Q mixers. The upper two I / Q mixers receive the HF_LO LO signal, while the lower two receive the LF_LO signal. The outputs of the upper two I / Q mixers undergo power combining (Power Comb) and are connected to the high-frequency channel power amplifier, PA_H. The output of the lower I / Q mixer is connected to the low-frequency channel power amplifier, PA_L. PA_L includes SPI+RDAC configuration circuitry for amplifier parameter adjustment. The outputs of the two power amplifiers are connected to the TX_OUT output terminal via switches. The signals selected by the switches are then transmitted through the output matching network.
[0074] Figure 3 FIG. 1 shows a schematic diagram of a radio frequency front-end circuit according to an exemplary embodiment of the present disclosure. Figure 3 As shown in the figure, the RF front-end circuit includes four parts marked with dotted boxes. The AFL circuit (black dotted box) in the upper left corner includes three voltage input terminals: VF, VL, and VDD, and a bias resistor VB. The PA_HIGH part (black dotted box) includes two-stage amplifiers AMP1 and AMP2, and two symmetrically arranged AFL circuits are set after AMP2. The input end of the PA_LOW part (black dotted box) is provided with an LC matching network, including a combination of inductors and capacitors, and also includes an amplifier unit AMP3. The output matching network (Output Matching Network, orange dotted box) connects the outputs of the two power amplifiers, is provided with an LF / HF switch for selective output, and is finally connected to the RF_OUT output terminal.
[0075] The dual-channel millimeter-wave transmitter system proposed in this embodiment achieves ultra-wideband coverage from the S-band to the Ka-band through an innovative high- and low-frequency channel structure design. The system adopts a combination of a high-frequency channel power amplifier and a low-frequency channel power amplifier, combined with a signal synthesis switch circuit, so that each channel can perform at its best in the optimal operating frequency band. The high-frequency channel adopts a multi-stage fully differential common-source amplifier structure, combined with an automatic frequency locking circuit, which effectively improves the high-frequency signal processing capability; the low-frequency channel adopts at least one stage of common-source amplifier structure, which simplifies the circuit design while ensuring performance. The innovative introduction of a current regulation circuit in the baseband processing circuit effectively solves the mixer switch tube mismatch problem and improves the system linearity. In addition, the present disclosure also optimizes the signal transmission efficiency through the design of the power synthesis circuit.
[0076] This architectural design enables the transmitter system to support high-order modulation schemes from 16QAM to 1024QAM, significantly improving data transmission rates and spectral efficiency. Furthermore, through optimized design of each functional module, the system reduces power consumption while maintaining high performance, improving overall power efficiency. The design of this transmitter system fully considers the requirements of integration, maintaining a high level of integration while achieving ultra-wideband coverage and high-order modulation support. Transmitters that implement the aforementioned technical features are not only suitable for current 5G communications but also leave room for development in upcoming 6G and higher frequency band communication systems. By providing ultra-wideband and efficient communication capabilities, it lays a solid foundation for future wireless communication technologies and provides important technical support for their development.
[0077] See also Figure 4 As shown, the present disclosure also provides a dual-channel millimeter-wave receiver. Existing millimeter-wave receivers mostly use a single-channel structure, which has limitations in wideband coverage. To achieve wider frequency coverage, the bandwidth of the low-noise amplifier (LNA) must be increased, which results in an increase in noise figure and a decrease in linearity. Furthermore, when processing high-frequency signals, traditional single-channel receivers struggle to strike a balance between high sensitivity and good linearity.
[0078] This disclosure proposes Figure 4 The receiver shown includes a radio frequency front-end circuit 21, a local oscillator signal processing circuit 22, and a baseband signal processing circuit 23. The radio frequency front-end circuit 21 utilizes an innovative dual-channel architecture, including a signal distribution switch circuit 213, a high-frequency channel low-noise amplifier 211, a low-frequency channel low-noise amplifier 212, and a mixer 214. This dual-channel design enables the receiver to flexibly select the optimal signal processing channel based on the operating frequency band, overcoming the performance bottleneck of a single-channel architecture in wideband applications.
[0079] Signal distribution switch circuit 213 is connected to the input terminal and is used to selectively direct the input RF signal to the high-frequency or low-frequency channel according to the operating frequency band. High-frequency channel low-noise amplifier 211 adopts a multi-stage cascode amplifier structure, which has excellent noise performance and gain characteristics in the high-frequency band. Low-frequency channel low-noise amplifier 212 adopts at least one stage of common-source amplifier structure, which simplifies circuit complexity while ensuring sufficient gain. Mixer 214 is connected to the output terminals of high-frequency channel low-noise amplifier 211 and low-frequency channel low-noise amplifier 212, respectively.
[0080] The local oscillator signal processing circuit 22 is used to provide a local oscillator signal to the mixer 214 to convert the radio frequency signal into a baseband signal.
[0081] The variable gain amplifier in the baseband signal processing circuit 23 is arranged at the output end, and adapts to input signals of different strengths by dynamically adjusting the gain, thereby expanding the dynamic range of the system.
[0082] The dual-channel millimeter-wave receiver proposed in this embodiment solves the problem that a single-channel receiver is difficult to achieve both wide-band coverage and high performance at the same time through the cooperation of a dual-channel architecture and a signal distribution switch. Each channel can be optimized for a specific frequency band to achieve wide-band coverage while ensuring performance. The high-frequency channel adopts a multi-stage common-source and common-gate amplifier structure, which significantly improves the reception performance of high-frequency signals. This structure not only provides good gain, but also maintains a low noise figure in the high-frequency band. The low-frequency channel adopts a common-source amplifier structure, which simplifies the circuit structure and reduces power consumption while meeting the low-frequency signal processing requirements. This structure can still maintain good noise and linearity performance in the low-frequency band. By setting a variable gain amplifier at the output end, the system can dynamically adjust the gain according to the input signal strength, which not only improves the dynamic range of the receiver but also ensures the stability of the signal quality.
[0083] In some embodiments, the local oscillator signal processing circuit includes a high-frequency local oscillator signal generating circuit and a low-frequency local oscillator signal generating circuit, which are respectively used to down-convert the signals of the high-frequency channel and the low-frequency channel.
[0084] According to this embodiment, the local oscillator signal processing circuit 22 can generate a high-frequency local oscillator signal HF_LO and a low-frequency local oscillator signal LF_LO. The high-frequency local oscillator signal HF_LO is connected to the mixer of the high-frequency channel, and the low-frequency local oscillator signal LF_LO is connected to the mixer of the low-frequency channel, respectively, for down-converting the signals in the corresponding frequency bands. By providing corresponding local oscillator signals for the high-frequency channel and the low-frequency channel, this embodiment optimizes the down-conversion efficiency of each channel, avoids the problem of a single local oscillator signal having difficulty covering a wide frequency band, improves the system's frequency selectivity, reduces crosstalk interference between channels, and helps the system maintain stable operating performance across different frequency bands.
[0085] In some embodiments, the variable gain amplifier is configured to dynamically adjust the gain according to the strength of the input signal.
[0086] The variable gain amplifier (VGA) in the baseband signal processing circuit 21 is located at the output. According to this embodiment, the VGA dynamically adjusts its gain based on the strength of the input signal, providing higher gain to ensure signal quality when receiving weak signals, and reducing gain to prevent distortion when receiving strong signals. This helps expand the dynamic range of the receiver, enabling the system to simultaneously process input signals of varying strengths, thereby optimizing signal output quality.
[0087] In some embodiments, the low-frequency channel low-noise amplifier comprises an adjustable active balun circuit for converting a single-ended signal into a differential signal.
[0088] The adjustable active balun circuit is used for converting a single-ended input signal into a differential signal output, and the adjustable characteristic thereof enables the system to adjust the balance of the converted differential signal. The conversion of the single-ended signal into the differential signal improves the anti-interference capability of the system, and the balance of the differential signal is optimized through the adjustable function, which is conducive to improving the noise performance of the low-frequency channel.
[0089] In some embodiments, the radio frequency front-end circuit comprises a matching network arranged before the high-frequency channel low-noise amplifier and the low-frequency channel low-noise amplifier. The matching network can be designed together with the signal distribution switch circuit. The matching network can be used for impedance matching between the input radio frequency signal and the amplifier, thereby improving the input matching performance of the system in a wide frequency band.
[0090] In some embodiments, the inter-stage of the multi-stage common-source common-gate amplifier in the high-frequency channel low-noise amplifier adopts L-type matching and transformer matching.
[0091] According to the present embodiment, the impedance matching between stages is optimized, which helps to maintain good gain characteristics in the high frequency band and is conducive to maintaining good noise performance.
[0092] Figure 5 A schematic diagram of an RX architecture according to an example embodiment of the present disclosure is shown. RF_IN is the radio frequency signal input end. An LF / HF switch is arranged at the input end, and the frequency division parameters of 0.03 / 15 / 40 are marked. The high-frequency channel is connected to a high-frequency low-noise amplifier (LNA_H), and the low-frequency channel is connected to a low-frequency low-noise amplifier (LNA_L). The local oscillator input LO_IN is processed into two local oscillator signals, HF_LO and LF_LO. The LNA_L comprises an SPI+RDAC configuration circuit. The chip comprises four I / Q mixers, of which the upper two I / Q mixers receive the HF_LO signal and the output signal of the high-frequency low-noise amplifier, and the lower two I / Q mixers receive the LF_LO signal. The RX chip comprises four baseband differential output interfaces RX_OUT, and each output signal is processed by a variable gain amplifier (VGA).
[0093] Figure 6 A schematic diagram of a radio frequency front-end circuit of a dual-channel millimeter wave receiver according to an example embodiment of the present disclosure is shown. As shown in FIG. 6, the radio frequency front-end circuit comprises a high-frequency channel and a low-frequency channel. The high-frequency channel comprises a high-frequency low-noise amplifier (LNA_H), and the low-frequency channel comprises a low-frequency low-noise amplifier (LNA_L). The high-frequency channel and the low-frequency channel are connected to a signal distribution switch circuit, and the signal distribution switch circuit is connected to a local oscillator input LO_IN. The local oscillator input LO_IN is processed into two local oscillator signals, HF_LO and LF_LO. The LNA_L comprises an SPI+RDAC configuration circuit. The chip comprises four I / Q mixers, of which the upper two I / Q mixers receive the HF_LO signal and the output signal of the high-frequency low-noise amplifier, and the lower two I / Q mixers receive the LF_LO signal. The RX chip comprises four baseband differential output interfaces RX_OUT, and each output signal is processed by a variable gain amplifier (VGA). Figure 6As shown in the figure, the RF front-end circuit consists of two sections, the LNA_HIGH and LNA_LOW. The LNA_HIGH section comprises a two-stage cascode amplifier. The LNA_LOW section comprises a three-stage common-source amplifier. The two sections are connected via an LF / HF switch. Furthermore, matching networks co-designed with the LF / HF switches (marked with blue dashed lines) are provided before the inputs of the LNA_HIGH and LNA_LOW sections.
[0094] The dual-channel millimeter-wave receiver system proposed in this embodiment demonstrates significant superiority in multiple technical indicators through innovative architectural design. First, the system achieves ultra-wideband coverage, capable of covering multiple frequency bands from the L-band to the Ka-band, meeting the needs of various communication standards and application scenarios. Second, through the optimized design of high- and low-frequency channels, the system achieves excellent performance indicators across the entire frequency band: the noise figure is less than 6dB, ensuring high-sensitivity reception of high-frequency signals; the third-order intercept point (IIP3) is greater than 0dBm, effectively suppressing nonlinear distortion and improving signal transmission quality. These performance indicators enable the system to effectively support high-order modulation methods from 16QAM to 1024QAM, significantly improving data transmission rate and spectrum efficiency.
[0095] Furthermore, this embodiment fully considers the requirements for integration and miniaturization in its circuit design. Through rational circuit structure design and layout planning, the system size and weight are effectively reduced while achieving the aforementioned high performance indicators. This high level of integration enables this embodiment to be widely used in various modern communication devices, such as high-definition audio and video transmission, the Internet of Things, and massive MIMO systems, fully meeting the dual requirements of miniaturization and high performance in various applications.
[0096] In summary, this embodiment, through its innovative dual-channel architecture, achieves significant benefits in ultra-wideband coverage, low noise, and high linearity, enhancing the overall performance of millimeter-wave receivers. This receiver system is not only suitable for current 5G communications but also leaves room for development in upcoming 6G and higher-frequency communication systems. By providing ultra-wideband and efficient communication capabilities, it provides important technical support for the future development of wireless communication technologies.
[0097] In one embodiment, the present disclosure also proposes a dual-channel millimeter-wave transceiver system, comprising the aforementioned transmitter and receiver. This integrated transceiver system not only possesses the aforementioned advantages but also further optimizes system resource utilization and improves overall integration through a shared local oscillator signal design.
[0098] The various embodiments in this specification are described in a progressive manner. Similar portions between the various embodiments can be referenced to each other. Each embodiment focuses on the differences between the other embodiments. In particular, the data processing device embodiment is generally similar to the method embodiment, so its description is relatively simple. For relevant portions, refer to the description of the method embodiment.
[0099] While the foregoing description describes certain embodiments of the present disclosure, other embodiments are within the scope of the following claims.
[0100] Although this specification includes many specific implementation details, these should not be interpreted as limiting the scope of any invention or the scope of protection claimed, but are mainly used to describe the features of specific embodiments of specific inventions. Certain features described in multiple embodiments within this specification may also be implemented in combination in a single embodiment. On the other hand, the various features described in a single embodiment may also be implemented separately in multiple embodiments or in any suitable sub-combination. In addition, although features may work in certain combinations as described above and even initially claimed as such, one or more features from the claimed combination may be removed from the combination in some cases, and the claimed combination may point to a sub-combination or a variation of the sub-combination.
[0101] Similarly, although operations are depicted in a particular order in the accompanying drawings, this should not be understood as requiring that these operations be performed in the particular order shown or performed sequentially, or that all illustrated operations be performed to achieve the desired results. In some cases, multitasking and parallel processing may be advantageous. In addition, the separation of various system modules and components in the above-described embodiments should not be understood as requiring such separation in all embodiments, and it should be understood that the described program components and systems can generally be integrated together in a single software product, or packaged into multiple software products.
[0102] In some cases, the actions recited in the claims can be performed in a different order and still achieve the desired results. Furthermore, the processes depicted in the accompanying drawings do not necessarily require the particular order or sequential sequence shown to achieve the desired results. In some implementations, multitasking and parallel processing may be advantageous.
[0103] The above description is merely a preferred embodiment of one or more embodiments of this specification and is not intended to limit one or more embodiments of this specification. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of one or more embodiments of this specification should be included in the scope of protection of one or more embodiments of this specification.
Claims
1. A dual-channel millimeter wave transmitter, characterized in that: It includes baseband signal processing circuit, local oscillator signal processing circuit and radio frequency front-end circuit, wherein: The baseband signal processing circuit is used to receive a baseband signal; The local oscillator signal processing circuit is used to provide a local oscillator signal to the radio frequency front-end circuit; The radio frequency front-end circuit comprises: A mixer, configured to up-convert the baseband signal output by the baseband signal processing circuit into a high-frequency signal and a low-frequency signal under the action of a local oscillator signal; A high-frequency channel power amplifier receives the high-frequency signal output by the mixer, wherein the high-frequency channel power amplifier includes a multi-stage fully differential common-source amplifier, and each stage is connected through a transformer matching network; a low-frequency channel power amplifier, receiving the low-frequency signal output by the mixer, wherein the low-frequency channel power amplifier includes at least one stage of common-source amplifier; and The signal synthesis switch circuit is connected to the output ends of the high-frequency channel power amplifier and the low-frequency channel power amplifier, and is used to selectively output the output signal of the high-frequency channel power amplifier or the low-frequency channel power amplifier when working in different frequency bands.
2. The dual-channel millimeter wave transmitter according to claim 1, characterized in that The mixer includes a switch tube, and the radio frequency front-end circuit further includes a current regulating circuit connected to the mixer, wherein the current regulating circuit is used to adjust the mismatch of the switch tube in the mixer.
3. The dual-channel millimeter wave transmitter according to claim 1, characterized in that The signal synthesis switch circuit includes a plurality of switch tubes, which are used to selectively conduct the output signal of the high-frequency channel power amplifier or the low-frequency channel power amplifier according to the operating frequency control signal.
4. The dual-channel millimeter wave transmitter according to claim 1, characterized in that The high-frequency channel power amplifier includes an automatic frequency locking circuit for achieving frequency locking of the high-frequency channel power amplifier.
5. The dual-channel millimeter wave transmitter according to claim 1, characterized in that: The radio frequency front-end circuit further includes a power synthesis circuit, which is arranged between the mixer and the high-frequency channel power amplifier.
6. The dual-channel millimeter wave transmitter according to claim 1, characterized in that The local oscillator signal processing circuit includes a high-frequency local oscillator signal generating circuit and a low-frequency local oscillator signal generating circuit, which are respectively used for up-converting the signals of the high-frequency channel and the low-frequency channel.
7. The dual-channel millimeter wave transmitter according to claim 1, characterized in that: The high-frequency channel power amplifier includes a three-stage fully differential common-source amplifier, and / or the low-frequency channel power amplifier includes a two-stage common-source amplifier.
8. A dual-channel millimeter wave receiver, characterized in that: It includes RF front-end circuit, local oscillator signal processing circuit and baseband signal processing circuit, among which: The RF front-end circuit includes a signal distribution switch circuit, a high-frequency channel low-noise amplifier, a low-frequency channel low-noise amplifier and a mixer, wherein: The signal distribution switch circuit is used to selectively transmit the input radio frequency signal to the high-frequency channel low-noise amplifier or the low-frequency channel low-noise amplifier when operating in different frequency bands; The high-frequency channel low-noise amplifier includes a multi-stage cascode amplifier; The low-frequency channel low-noise amplifier includes at least one stage of common-source amplifier; and The mixer is connected to the output ends of the high-frequency channel low-noise amplifier and the low-frequency channel low-noise amplifier respectively, and receives the local oscillator signal provided by the local oscillator signal processing circuit to down-convert the radio frequency signal into a baseband signal; The local oscillator signal processing circuit is used to provide a local oscillator signal to the mixer; and The baseband signal processing circuit is connected to the output end of the mixer and is used to output the baseband signal. The baseband signal processing circuit includes a variable gain amplifier.
9. The dual-channel millimeter wave receiver according to claim 8, characterized in that: The local oscillator signal processing circuit includes a high-frequency local oscillator signal generating circuit and a low-frequency local oscillator signal generating circuit, which are respectively used to down-convert the signals of the high-frequency channel and the low-frequency channel.
10. The dual-channel millimeter wave receiver according to claim 8, characterized in that: The variable gain amplifier is used to dynamically adjust the gain according to the strength of the input signal.
11. The dual-channel millimeter wave receiver according to claim 8, characterized in that: The low-frequency channel low-noise amplifier includes an adjustable active balun circuit for converting a single-ended signal into a differential signal.
12. The dual-channel millimeter wave receiver according to claim 8, characterized in that: The radio frequency front-end circuit includes a matching network, which is arranged before the high-frequency channel low-noise amplifier and the low-frequency channel low-noise amplifier.
13. The dual-channel millimeter wave receiver according to claim 8, characterized in that: L-type matching and transformer matching are adopted between stages of the multi-stage cascode amplifier in the high-frequency channel low-noise amplifier.
14. The dual-channel millimeter wave receiver according to claim 8, characterized in that: The high-frequency channel low-noise amplifier includes a two-stage common-source common-gate amplifier, and / or the low-frequency channel low-noise amplifier includes a three-stage common-source amplifier.
15. A dual-channel millimeter wave transceiver system, characterized in that: The invention comprises the transmitter according to any one of claims 1 to 7 and the receiver according to any one of claims 8 to 14.
Citation Information
Patent Citations
High-performance broadband microwave receiving channel
CN114204950A
Two-channel high-frequency signal precision synchronous output and differential output control circuit
CN219577045U