Light-emitting diode structure and preparation method of light-emitting diode structure

Abstract

The invention provides a light-emitting diode structure and a preparation method of the light-emitting diode structure. The light emitting diode structure includes: a substrate; the light-emitting units are arranged on one side of the substrate at intervals, and a first gap is formed between every two adjacent light-emitting units; the first insulating dielectric layer is located on the side, provided with the light emitting units, of the substrate, the first insulating dielectric layer covers the side wall of each light emitting unit, the first insulating dielectric layer is provided with a second gap between every two adjacent light emitting units, and the interval of the second gaps in the first direction is smaller than that of the first gaps in the first direction; the first direction is perpendicular to the stacking direction of the substrate and the first insulating dielectric layer; the second insulating dielectric layer is located on the side, provided with the light-emitting units, of the substrate, the second insulating dielectric layer covers the surface, away from the light-emitting units, of the first insulating dielectric layer, the second insulating dielectric layer is provided with a third gap between the adjacent light-emitting units, and the interval of the third gap in the first direction is smaller than that of the second gap in the first direction.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a light emitting diode structure and a method for preparing the light emitting diode structure. Background Art

[0002] Micro light emitting diode (LED) arrays have the advantages of high color saturation, high contrast, fast response speed, low energy consumption and long service life. However, in the prior art, due to the small size of micro light emitting diodes (LEDs), the side walls of the light emitting units are usually damaged during the manufacturing process of micro light emitting diodes (LEDs), thereby affecting the device performance. Summary of the invention

[0003] The main purpose of the present invention is to provide a light emitting diode structure and a method for preparing the light emitting diode structure, so as to solve the problem in the prior art that the etching process of the light emitting diode structure may damage the side wall of the light emitting unit.

[0004] In order to achieve the above-mentioned purpose, according to one aspect of the present invention, a light-emitting diode structure is provided, which includes: a substrate; a plurality of light-emitting units, which are arranged at intervals on one side of the substrate, and a first gap is provided between two adjacent light-emitting units; a first insulating dielectric layer, which is located on the side of the substrate having the light-emitting units, the first insulating dielectric layer covers the side wall of each light-emitting unit, and the first insulating dielectric layer has a second gap between two adjacent light-emitting units, the interval of the second gap in the first direction is smaller than the interval of the first gap in the first direction, and the first direction is perpendicular to the stacking direction of the substrate and the first insulating dielectric layer; a second insulating dielectric layer, which is located on the side of the substrate having the light-emitting units, the second insulating dielectric layer covers the surface of the first insulating dielectric layer on the side away from the light-emitting units, and the second insulating dielectric layer has a third gap between adjacent light-emitting units, and the interval of the third gap in the first direction is smaller than the interval of the second gap in the first direction.

[0005] Optionally, the light emitting diode structure further includes: a plurality of metal connecting parts, which are located between the plurality of light emitting units and the substrate in a one-to-one correspondence.

[0006] Optionally, the light emitting unit and the metal connecting portion are in a stepped structure.

[0007] Optionally, the substrate includes a driving circuit layer and a plurality of pads spaced between the driving circuit layer and the plurality of metal connecting parts, the plurality of pads correspond to the plurality of metal connecting parts one by one, and the metal connecting parts and the pads are in a T-shaped structure.

[0008] Optionally, the light emitting diode structure further includes: a blocking member, located between adjacent light emitting units and filling the third gap.

[0009] According to another aspect of the present invention, there is provided a method for preparing the above-mentioned light-emitting diode structure, the preparation method comprising: forming a plurality of light-emitting units arranged at intervals on one side of a substrate, with a first gap between adjacent light-emitting units; forming a first insulating dielectric layer on the side of the substrate having the light-emitting units, the first insulating dielectric layer covering the side wall of each light-emitting unit, and the first insulating dielectric layer having a second gap between adjacent light-emitting units, the spacing of the second gap in a first direction being smaller than the spacing of the first gap in the first direction, and the first direction being perpendicular to the stacking direction of the substrate and the first insulating dielectric layer; forming a second insulating dielectric layer on the side of the substrate having the light-emitting units, the second insulating dielectric layer covering the surface of the first insulating dielectric layer away from the light-emitting units, and the second insulating dielectric layer having a third gap between adjacent light-emitting units, the spacing of the third gap in the first direction being smaller than the spacing of the second gap in the first direction.

[0010] Optionally, the step of forming a first insulating dielectric layer includes: covering a first insulating material layer on a side of the light-emitting unit away from the substrate so that the first insulating material layer fills the first gap; removing a portion of the first insulating material in the first insulating material layer located between adjacent light-emitting units so that the remaining portion of the first insulating material in the first insulating material layer covers the side wall of the light-emitting unit, and forming a first insulating dielectric layer.

[0011] Optionally, after the step of covering the first insulating material layer, the step of forming the first insulating dielectric layer includes: performing a first patterning on the first insulating material layer using a photolithography process to form a plurality of first mask bodies covering the plurality of light-emitting units, the plurality of first mask bodies corresponding one-to-one to the plurality of light-emitting units, and a second gap being provided between two adjacent first mask bodies; performing a planarization process on the first insulating material layer to form an exposed platform surface of the light-emitting unit, and the remaining first insulating material in the first insulating material forms a first insulating dielectric layer.

[0012] Optionally, the step of forming a second insulating medium layer includes: covering the second insulating material layer on the side of the light-emitting unit away from the substrate so that the second insulating material layer fills the second gap; removing part of the second insulating material in the second insulating material layer located between adjacent light-emitting units so that the remaining second insulating material in the second insulating material layer covers the surface of the first insulating medium layer away from the light-emitting unit, and forming a second insulating medium layer.

[0013] Optionally, after the step of forming the second insulating material layer, the step of forming the second insulating dielectric layer includes: flattening the second insulating material layer to form an exposed flattened surface of the light-emitting unit; and performing a second patterning on the second insulating material layer using a photolithography process to form a plurality of second mask bodies covering the surface of the first insulating dielectric layer on one side away from the light-emitting unit, and a third gap is provided between two adjacent second mask bodies.

[0014] Optionally, the step of forming the light-emitting unit includes: forming a light-emitting functional layer on one side of the substrate; and performing a third patterning on the light-emitting functional layer to form a plurality of light-emitting units spaced apart on a surface of the light-emitting functional layer.

[0015] Optionally, the step of forming a light-emitting functional layer includes: providing a light-emitting functional layer, the light-emitting functional layer including a first doped layer, an active layer, and a second doped layer that are stacked; forming a first metal layer on the surface of the substrate; forming a second metal layer on a side of the first doped layer away from the second doped layer; and bonding the first metal layer and the second metal layer to form the light-emitting functional layer.

[0016] Optionally, the first metal layer and the second metal layer constitute a metal connection part, and before the step of forming the second insulating dielectric layer, the preparation method also includes: using the first insulating dielectric layer as a mask; etching the metal connection part to the substrate to form a plurality of metal connection parts, and the plurality of metal connection parts correspond one-to-one to the plurality of light-emitting units.

[0017] The technical solution of the present invention is applied to provide a light-emitting diode structure, which includes a substrate, a plurality of light-emitting units, a first insulating dielectric layer and a second insulating dielectric layer. The plurality of light-emitting units are arranged at intervals on one side of the substrate, and a first gap is provided between two adjacent light-emitting units. The first insulating dielectric layer is located on the side of the substrate having the light-emitting units, the first insulating dielectric layer covers the side wall of each light-emitting unit, and the first insulating dielectric layer has a second gap between two adjacent light-emitting units, the interval of the second gap in the first direction is smaller than the interval of the first gap in the first direction, and the first direction is perpendicular to the stacking direction of the first insulating dielectric layer. The second insulating dielectric layer is located on the side of the substrate having the light-emitting units, the second insulating dielectric layer covers the surface of the first insulating dielectric layer away from the light-emitting units, and the second insulating dielectric layer has a third gap between adjacent light-emitting units, and the interval of the third gap in the first direction is smaller than the interval of the second gap in the first direction. Based on this, it can be understood that in the process of forming the second gap in the first insulating dielectric layer, the first insulating dielectric layer always covers the side wall of the light-emitting unit, so that the formation of the second gap in the first insulating dielectric layer will not cause damage to the side wall of the light-emitting unit; in the process of forming the third gap in the second insulating dielectric layer, the second insulating dielectric layer always covers the surface of the first insulating dielectric layer away from the light-emitting unit, so that the formation of the third gap in the second insulating dielectric layer will not cause damage to the first insulating dielectric layer, and further will not cause damage to the side wall of the light-emitting unit. Therefore, through this application, the problem that the etching process of the light-emitting diode structure in the prior art will damage the side wall of the light-emitting unit is solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the accompanying drawings:

[0019] Figure 1 A schematic cross-sectional structure diagram of a light emitting diode structure according to an embodiment of the present invention is shown;

[0020] Figure 2 A schematic cross-sectional structure diagram of a substrate and a light-emitting functional layer provided in a method for preparing a light-emitting diode structure according to an embodiment of the present invention is shown;

[0021] Figure 3 Shown in Figure 2 A schematic diagram of a cross-sectional structure after a light-emitting unit is formed based on the structure shown;

[0022] Figure 4 Shown in Figure 3 A schematic diagram of a cross-sectional structure after a protective layer is formed on the basis of the structure shown;

[0023] Figure 5 Shown in Figure 4 A schematic diagram of a cross-sectional structure after covering a first insulating material layer based on the structure shown;

[0024] Figure 6 Shown in Figure 5 A schematic cross-sectional structure diagram after forming a first mask body based on the structure shown;

[0025] Figure 7 Shown in Figure 6 A schematic diagram of a cross-sectional structure after etching the metal connection portion based on the structure shown;

[0026] Figure 8 Shown in Figure 7 A schematic diagram of a cross-sectional structure after covering a second insulating material layer based on the structure shown;

[0027] Fig. 9 Shown in Figure 8 A schematic diagram of the cross-sectional structure after planarizing the second insulating material layer based on the structure shown.

[0028] The above drawings include the following reference numerals:

[0029] 10. Substrate; 101. Drive circuit layer; 102. Pad; 20. Metal connection portion; 30. Light-emitting unit; 301. Light-emitting functional layer; 302. First doped layer; 303. Active layer; 304. Second doped layer; 40. Protective layer; 50. First insulating dielectric layer; 501. First insulating material layer; 502. First mask body; 60. Second insulating dielectric layer; 601. Second insulating material layer; 70. Blocking member. DETAILED DESCRIPTION

[0030] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0031] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0032] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present invention described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0033] As described in the background technology, in the prior art, due to the small size of micro light emitting diodes (LEDs), the sidewalls of the light emitting units are usually damaged during the manufacturing process of the micro light emitting diodes (LEDs), thereby affecting the device performance. In order to solve the problem that the etching process of the light emitting diode structure in the prior art may damage the sidewalls of the light emitting units, the embodiments of the present application provide a light emitting diode structure and a method for preparing the light emitting diode structure.

[0034] In some optional embodiments, a light emitting diode structure is provided, such as Figure 1As shown, the light-emitting diode structure includes: a substrate 10; a plurality of light-emitting units 30, which are arranged at intervals on one side of the substrate 10, and a first gap is provided between two adjacent light-emitting units 30; a first insulating dielectric layer 50, which is located on the side of the substrate 10 having the light-emitting units 30, the first insulating dielectric layer 50 covers the side wall of each of the light-emitting units 30, and the first insulating dielectric layer 50 has a second gap between adjacent light-emitting units 30, and the interval of the second gap in the first direction is smaller than the interval of the first gap in the first direction, and the first direction is perpendicular to the stacking direction of the substrate 10 and the first insulating dielectric layer 50; a second insulating dielectric layer 60, which is located on the side of the substrate 10 having the light-emitting units 30, the second insulating dielectric layer 60 covers the surface of the first insulating dielectric layer 50 away from the light-emitting units 30, and the second insulating dielectric layer 60 has a third gap between adjacent light-emitting units 30, and the interval of the third gap in the first direction is smaller than the interval of the second gap in the first direction.

[0035] Optionally, the light emitting unit 30 includes a first doping layer 302 , an active layer 303 and a second doping layer 304 which are stacked.

[0036] Specifically, the first insulating dielectric layer 50 fills part of the first gap between two adjacent light-emitting units 30 by covering the sidewalls of each light-emitting unit 30, and then the subsequent photolithography process can be performed on the first insulating material layer corresponding to the first insulating dielectric layer 50 between the first gaps, that is, the etched area of ​​the first insulating material layer corresponding to the first insulating dielectric layer 50 can fall into the etched area of ​​the light-emitting functional layer corresponding to the light-emitting unit 30, thereby avoiding the photolithography process corresponding to the first insulating dielectric layer 50 from damaging the light-emitting unit 30. In addition, the first insulating dielectric layer 50 covers the sidewalls of the light-emitting unit 30, thereby reducing the interval of the first gap between two adjacent light-emitting units 30, and realizing electrical isolation between the two adjacent light-emitting units 30.

[0037] Exemplarily, the thickness of the first insulating medium layer 50 covering the light emitting unit 30 accounts for 15% of the interval of the first gap.

[0038] Specifically, the second insulating dielectric layer 60 fills part of the second gap in the first insulating dielectric layer 50 between two adjacent light-emitting units 30 by covering the surface of the first insulating dielectric layer 50 away from the light-emitting unit 30, and then the subsequent photolithography process can be performed on the second insulating material layer corresponding to the second insulating dielectric layer 60 between the second gaps, that is, the etched area of ​​the second insulating material layer corresponding to the second insulating dielectric layer 60 can fall within the etched area of ​​the first insulating material layer corresponding to the first insulating dielectric layer 50, thereby avoiding the photolithography process corresponding to the second insulating dielectric layer 60 from damaging the light-emitting unit 30. In addition, the second insulating dielectric layer 60 covers the surface of the first insulating dielectric layer 50 away from the light-emitting unit 30, thereby reducing the interval of the second gap in the first insulating dielectric layer 50 between two adjacent light-emitting units 30, and further achieving electrical isolation between two adjacent light-emitting units 30.

[0039] Exemplarily, the third gap may occupy 2 / 3 of the first gap.

[0040] Optionally, the material of the first insulating dielectric layer 50 may be the same as the material of the second insulating dielectric layer 60 .

[0041] In the above embodiment, one side of the substrate 10 has a plurality of light-emitting units 30 arranged at intervals, and a first gap is provided between two adjacent light-emitting units 30. Furthermore, an insulating dielectric layer is provided on the side of the substrate 10 having the light-emitting units 30. It can be seen that the insulating dielectric layer in the embodiment of the present application includes a first insulating dielectric layer 50 and a second insulating dielectric layer 60. Among them, the first insulating dielectric layer 50 covers the side wall of each light-emitting unit 30, and the first insulating dielectric layer 50 has a second gap between two adjacent light-emitting units 30, and the interval of the second gap in the first direction is smaller than the interval of the first gap in the first direction. Based on this, the second insulating dielectric layer 60 covers the surface of the first insulating dielectric layer 50 away from the light-emitting unit 30, and the second insulating dielectric layer 60 has a third gap between adjacent light-emitting units 30, and the interval of the third gap in the first direction is smaller than the interval of the second gap in the first direction. It can be seen that in the process of forming the second gap in the first insulating dielectric layer 50, the first insulating dielectric layer 50 always covers the side wall of the light-emitting unit 30, so that the formation of the second gap in the first insulating dielectric layer 50 will not cause damage to the side wall of the light-emitting unit 30; in the process of forming the third gap in the second insulating dielectric layer 60, the second insulating dielectric layer 60 always covers the surface of the first insulating dielectric layer 50 away from the light-emitting unit 30, so that the formation of the third gap in the second insulating dielectric layer 60 will not cause damage to the first insulating dielectric layer 50, and further will not cause damage to the side wall of the light-emitting unit 30. Therefore, through the present application, the problem that the etching process of the light-emitting diode structure in the prior art will damage the side wall of the light-emitting unit 30 is solved.

[0042] In some optional embodiments, such as Figure 1 As shown, in order to prevent the photolithography process corresponding to the first insulating medium layer 50 from damaging the side wall of the light-emitting unit 30, a protective layer 40 is further provided between the first insulating medium layer 50 and the light-emitting unit 30, and the protective layer 40 also covers the upper surface of the light-emitting unit 30 away from the substrate 10.

[0043] In some optional embodiments, such as Figure 1 As shown, in order to solve the problem of lattice mismatch and thermal expansion coefficient mismatch between the substrate 10 and the light-emitting unit 30, the light-emitting diode structure further includes a plurality of metal connecting parts 20, and the plurality of metal connecting parts 20 are located one by one between the plurality of the light-emitting units 30 and the substrate 10. In addition, by bonding, the bonding strength between the light-emitting unit 30 and the substrate 10 can be improved, thereby improving the reliability of the device.

[0044] In some optional embodiments, such as Figure 1 As shown, in order to prevent the etching process corresponding to the metal connection part 20 from damaging the side wall of the light-emitting unit 30, the light-emitting unit 30 and the metal connection part 20 are in a step structure. It can be understood that, when the light-emitting diode structure also includes the metal connection part 20, the etching process of the metal connection part 20 can occur after the photolithography process of the first insulating dielectric layer 50, so that the metal connection part 20 can be directly etched using the first insulating dielectric layer 50 as a mask. At this time, the first insulating dielectric layer 50 still covers the side wall of the light-emitting unit 30, thereby preventing the etching process corresponding to the metal connection part 20 from damaging the side wall of the light-emitting unit 30.

[0045] In some optional embodiments, such as Figure 1 As shown, the substrate 10 includes a driving circuit layer 101 and a plurality of pads 102 spaced between the driving circuit layer 101 and the plurality of metal connecting parts 20, the plurality of pads 102 correspond to the plurality of metal connecting parts 20 one by one, and the metal connecting parts 20 and the pads 102 are in a T-shaped structure. Based on this, the light emitting unit 30 and the driving circuit layer 101 can form a good contact.

[0046] In some optional embodiments, such as Figure 1 As shown, the light emitting diode structure further includes a blocking member 70 , which is located between adjacent light emitting units 30 and fills the third gap.

[0047] Optionally, the material of the blocking member 70 may be a metal material or an insulating dielectric material.

[0048] In the above embodiment, by providing the blocking member 70 between adjacent light emitting units 30 , optical isolation between adjacent light emitting units 30 can be achieved, thereby reducing the crosstalk effect between adjacent light emitting units 30 .

[0049] According to another aspect of the present application, a method for preparing a light emitting diode is provided, Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 and Figure 8 As shown, the preparation method includes: forming a plurality of light-emitting units 30 arranged at intervals on one side of the substrate 10, with a first gap between adjacent light-emitting units 30; forming a first insulating dielectric layer 50 on the side of the substrate 10 having the light-emitting units 30, the first insulating dielectric layer 50 covering the side wall of each light-emitting unit 30, and the first insulating dielectric layer 50 having a second gap between adjacent light-emitting units 30, the interval of the second gap in the first direction is smaller than the interval of the first gap in the first direction, and the first direction is perpendicular to the stacking direction of the substrate 10 and the first insulating dielectric layer 50; forming a second insulating dielectric layer 60 on the side of the substrate 10 having the light-emitting units 30, the second insulating dielectric layer 60 covering the surface of the first insulating dielectric layer 50 away from the light-emitting units 30, and the second insulating dielectric layer 60 having a third gap between adjacent light-emitting units 30, the interval of the third gap in the first direction is smaller than the interval of the second gap in the first direction.

[0050] Specifically, combined Figure 1 and Figure 2 As shown, in order to form a plurality of light-emitting units 30 spaced apart on one side of the substrate 10, a light-emitting functional layer 301 corresponding to the substrate 10 and the light-emitting unit 30 can be first provided, and a physical connection between the substrate 10 and the light-emitting functional layer 301 can be achieved through wafer-to-wafer bonding, and then the above-mentioned plurality of light-emitting units 30 can be formed on the light-emitting functional layer 301 using a photolithography process.

[0051] In some optional embodiments, such as Figure 5 and Fig. 9 As shown, the steps of forming the first insulating medium layer 50 include: covering the first insulating material layer 501 on the side of the light-emitting unit 30 away from the substrate 10 so that the first insulating material layer 501 fills the first gap; removing part of the first insulating material in the first insulating material layer 501 located between adjacent light-emitting units 30 so that the remaining part of the first insulating material in the first insulating material layer 501 covers the side wall of the light-emitting unit 30, and forming the first insulating medium layer 50.

[0052] Specifically, the first insulating material layer 501 may cover the entire surface of a side of each light emitting unit 30 away from the substrate 10 , and fill the first gap between any two adjacent light emitting units 30 .

[0053] Optionally, in order to make the etched area in the first insulating material layer 501 fall in the first gap between two adjacent light-emitting units 30, and make the side wall of each light-emitting unit 30 completely covered by the first insulating material layer 501, after the step of covering the first insulating material layer 501, the step of forming the first insulating dielectric layer 50 includes: performing a first patterning on the first insulating material layer 501 by using a photolithography process to form a plurality of first mask bodies 502 covering the plurality of light-emitting units 30, the plurality of first mask bodies 502 corresponding to the plurality of light-emitting units 30 one by one, and a second gap being provided between two adjacent first mask bodies 502, such as Figure 6 The first insulating material layer 501 is planarized to form a bare planarized surface of the light emitting unit 30, and the remaining first insulating material in the first insulating material forms a first insulating dielectric layer 50, as shown Fig. 9 shown.

[0054] In addition, combined Figure 7 , Figure 8 and Fig. 9 As shown, after the step of forming a plurality of first mask bodies 502 and before covering the second insulating material layer 601, the first insulating material layer 501 on the side of each light-emitting unit 30 away from the substrate 10 may be retained, that is, the first insulating material layer 501 is not planarized. It can be understood that the portion of the first insulating material layer 501 covering the side wall of the light-emitting unit 30 is the first insulating medium layer 50.

[0055] Specifically, Figure 4 As shown, before the step of forming the first insulating dielectric layer 50, the above-mentioned method for preparing the light-emitting diode may further include: forming a protective layer 40 on the side of the light-emitting unit 30 away from the substrate 10, so that the protective layer 40 covers the surface of each light-emitting unit 30, so that the protective layer 40 can avoid damaging the side wall of the light-emitting unit 30 in the photolithography process corresponding to the first insulating dielectric layer 50.

[0056] In some optional embodiments, in combination Figure 8 , Fig. 9 and Figure 1As shown, the steps of forming the second insulating medium layer 60 include: covering the second insulating material layer 601 on the side of the light-emitting unit 30 away from the substrate 10, so that the second insulating material layer 601 fills the second gap; removing part of the second insulating material in the second insulating material layer 601 located between adjacent light-emitting units 30, so that the remaining second insulating material in the second insulating material layer 601 covers the surface of the first insulating medium layer 50 away from the side of the light-emitting unit 30, and forming the second insulating medium layer 60.

[0057] Specifically, Figure 8 As shown, the second insulating material layer 601 can cover the entire surface of the first insulating medium layer 50 away from the light emitting unit 30 , and fill the second gap in the first insulating medium layer 50 between any two adjacent light emitting units 30 .

[0058] Optionally, in order to make the etched area in the second insulating material layer 601 fall in the second gap of the first insulating dielectric layer 50 between two adjacent light-emitting units 30, and make the first insulating dielectric layer 50 away from the light-emitting unit 30 The side is completely covered by the second insulating material layer 601, after the step of forming the second insulating material layer 601, the step of forming the second insulating dielectric layer 60 includes: flattening the second insulating material layer 601 so that the light-emitting unit 30 forms a bare flattened surface, such as Fig. 9 As shown; the second insulating material layer 601 is secondly patterned by photolithography to form a plurality of second mask bodies (not marked in the figure) covering the surface of the first insulating dielectric layer 50 away from the light emitting unit 30, and a third gap is provided between two adjacent second mask bodies.

[0059] In addition, combined Figure 8 and Fig. 9 As shown, after forming the above-mentioned multiple first mask bodies 502, if the remaining first insulating material layer 501 is not planarized, the step of planarizing the second insulating material layer 601 can be: sequentially planarizing the first insulating material layer 501 and the second insulating material layer 601 to form an exposed planarized surface of the light-emitting unit 30.

[0060] In some optional embodiments, in combination Figure 2 and Figure 3As shown, in order to improve the reliability of the device, the step of forming the light-emitting unit 30 includes: forming a light-emitting functional layer 301 on one side of the substrate 10; performing a third patterning on the light-emitting functional layer 301 to form a plurality of light-emitting units 30 arranged at intervals on the surface of the light-emitting functional layer 301. The step of forming the light-emitting functional layer 301 includes: providing a light-emitting functional layer 301, the light-emitting functional layer 301 including a first doping layer 302, an active layer 303 and a second doping layer 304 arranged in a stacked manner; forming a first metal layer on the surface of the substrate 10; forming a second metal layer on a side of the first doping layer 302 away from the second doping layer 304; bonding the first metal layer and the second metal layer to form the light-emitting functional layer 301.

[0061] Specifically, the first doped layer 302 may be a P-type gallium nitride layer, the active layer 303 may be a multi-layer quantum well, and the second doped layer 304 may be an N-type gallium nitride layer.

[0062] It should be noted that the first metal layer and the second metal layer constitute the metal connection portion 20. Figure 2 As shown, in order to simplify the etching process, in some optional implementations, before the step of forming the second insulating dielectric layer 60, as shown in FIG. Figure 6 and Figure 7 As shown, the preparation method further includes: using the first insulating dielectric layer 50 as a mask; etching the metal connection part 20 to the substrate 10 to form a plurality of metal connection parts 20, and the plurality of metal connection parts 20 correspond to the plurality of light-emitting units 30 one by one.

[0063] Furthermore, an optical isolation material may be filled in the third gap to form a blocking member 70 to achieve electrical isolation and optical isolation of the light emitting unit 30 .

[0064] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:

[0065] The technical solution of the present invention is applied to provide a light-emitting diode structure, which includes a substrate, a plurality of light-emitting units, a first insulating dielectric layer and a second insulating dielectric layer. The plurality of light-emitting units are arranged at intervals on one side of the substrate, and a first gap is provided between two adjacent light-emitting units. The first insulating dielectric layer is located on the side of the substrate having the light-emitting units, the first insulating dielectric layer covers the side wall of each light-emitting unit, and the first insulating dielectric layer has a second gap between two adjacent light-emitting units, the interval of the second gap in the first direction is smaller than the interval of the first gap in the first direction, and the first direction is perpendicular to the stacking direction of the first insulating dielectric layer. The second insulating dielectric layer is located on the side of the substrate having the light-emitting units, the second insulating dielectric layer covers the surface of the first insulating dielectric layer away from the light-emitting units, and the second insulating dielectric layer has a third gap between adjacent light-emitting units, and the interval of the third gap in the first direction is smaller than the interval of the second gap in the first direction. Based on this, it can be understood that in the process of forming the second gap in the first insulating dielectric layer, the first insulating dielectric layer always covers the side wall of the light-emitting unit, so that the formation of the second gap in the first insulating dielectric layer will not cause damage to the side wall of the light-emitting unit; in the process of forming the third gap in the second insulating dielectric layer, the second insulating dielectric layer always covers the surface of the first insulating dielectric layer away from the light-emitting unit, so that the formation of the third gap in the second insulating dielectric layer will not cause damage to the first insulating dielectric layer, and further will not cause damage to the side wall of the light-emitting unit. Therefore, through this application, the problem that the etching process of the light-emitting diode structure in the prior art will damage the side wall of the light-emitting unit is solved.

[0066] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A light emitting diode structure, characterized in that: The light emitting diode structure comprises: substrate; A plurality of light-emitting units are arranged at intervals on one side of the substrate, and a first gap is formed between two adjacent light-emitting units; a first insulating dielectric layer, located on a side of the substrate having the light-emitting units, the first insulating dielectric layer covering a side wall of each of the light-emitting units, and the first insulating dielectric layer having a second gap between two adjacent light-emitting units, the spacing of the second gap in a first direction being smaller than the spacing of the first gap in the first direction, and the first direction being perpendicular to a stacking direction of the substrate and the first insulating dielectric layer; A second insulating medium layer is located on a side of the substrate having the light-emitting unit, the second insulating medium layer covers a surface of the first insulating medium layer away from the light-emitting unit, and the second insulating medium layer has a third gap between adjacent light-emitting units, and the spacing of the third gap in the first direction is smaller than the spacing of the second gap in the first direction.

2. The light emitting diode structure according to claim 1, characterized in that: The light emitting diode structure further comprises: A plurality of metal connecting parts are located between the plurality of light emitting units and the substrate in a one-to-one correspondence.

3. The light emitting diode structure according to claim 2, characterized in that: The light emitting unit and the metal connecting portion are in a step structure.

4. The light emitting diode structure according to claim 2, characterized in that: The substrate includes a driving circuit layer and a plurality of pads spaced between the driving circuit layer and the plurality of metal connecting parts. The plurality of pads correspond to the plurality of metal connecting parts one by one, and the metal connecting parts and the pads are in a T-shaped structure.

5. The light emitting diode structure according to any one of claims 1 to 4, characterized in that: The light emitting diode structure further comprises: The blocking member is located between adjacent light emitting units and fills the third gap.

6. A method for preparing a light emitting diode structure according to any one of claims 1 to 5, characterized in that: The preparation method comprises: A plurality of light emitting units are formed on one side of the substrate and are arranged at intervals, with a first gap between adjacent light emitting units; A first insulating dielectric layer is formed on a side of the substrate having the light-emitting units, the first insulating dielectric layer covers a side wall of each of the light-emitting units, and the first insulating dielectric layer has a second gap between adjacent light-emitting units, the interval of the second gap in a first direction is smaller than the interval of the first gap in the first direction, and the first direction is perpendicular to a stacking direction of the substrate and the first insulating dielectric layer; A second insulating medium layer is formed on a side of the substrate having the light-emitting unit, the second insulating medium layer covers a surface of the first insulating medium layer away from the light-emitting unit, and the second insulating medium layer has a third gap between adjacent light-emitting units, and the spacing of the third gap in the first direction is smaller than the spacing of the second gap in the first direction.

7. The preparation method according to claim 6, characterized in that: The step of forming the first insulating dielectric layer comprises: Covering a first insulating material layer on a side of the light emitting unit away from the substrate, so that the first insulating material layer fills the first gap; Part of the first insulating material in the first insulating material layer located between adjacent light-emitting units is removed, so that the remaining part of the first insulating material in the first insulating material layer covers the side walls of the light-emitting units, and forms the first insulating medium layer.

8. The preparation method according to claim 7, characterized in that: After the step of covering the first insulating material layer, the step of forming the first insulating medium layer includes: Performing a first patterning on the first insulating material layer by using a photolithography process to form a plurality of first mask bodies covering the plurality of light-emitting units, wherein the plurality of first mask bodies correspond to the plurality of light-emitting units one by one, and the second gap is provided between two adjacent first mask bodies; The first insulating material layer is planarized so that the light-emitting unit forms an exposed platform surface, and the remaining first insulating material in the first insulating material forms the first insulating medium layer.

9. The preparation method according to claim 6, characterized in that: The step of forming the second insulating dielectric layer comprises: Covering a second insulating material layer on a side of the light emitting unit away from the substrate, so that the second insulating material layer fills the second gap; Part of the second insulating material in the second insulating material layer located between adjacent light-emitting units is removed so that the remaining second insulating material in the second insulating material layer covers the surface of the first insulating medium layer away from the light-emitting unit, and forms the second insulating medium layer.

10. The preparation method according to claim 9, characterized in that: After the step of forming the second insulating material layer, the step of forming the second insulating medium layer includes: performing a planarization process on the second insulating material layer so that the light-emitting unit forms an exposed planarized surface; The second insulating material layer is second patterned by using a photolithography process to form a plurality of second mask bodies covering a surface of the first insulating medium layer away from the light emitting unit, and a third gap is provided between two adjacent second mask bodies.

11. The preparation method according to any one of claims 6 to 10, characterized in that: The steps of forming the light emitting unit include: forming a light-emitting functional layer on one side of the substrate; The light-emitting functional layer is subjected to a third patterning to form a plurality of light-emitting units spaced apart from each other on a surface of the light-emitting functional layer.

12. The preparation method according to claim 11, characterized in that: The step of forming the light-emitting functional layer comprises: Providing a light-emitting functional layer, the light-emitting functional layer comprising a first doping layer, an active layer, and a second doping layer that are stacked; forming a first metal layer on the surface of the substrate; forming a second metal layer on a side of the first doped layer away from the second doped layer; The first metal layer and the second metal layer are bonded to form the light-emitting functional layer.

13. The preparation method according to claim 12, characterized in that: The first metal layer and the second metal layer constitute a metal connection portion, and before the step of forming the second insulating dielectric layer, the preparation method further includes: Using the first insulating dielectric layer as a mask; The metal connection part is etched to the substrate to form a plurality of metal connection parts, and the plurality of metal connection parts correspond to the plurality of light emitting units one by one.

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