Display device and display device driving method

Abstract

This application discloses a display device and a driving method for the display device. The display device includes: a substrate; an array layer disposed on one side of the substrate, the array layer including thin-film transistors; an electrochromic layer at least partially disposed on the side of the thin-film transistors facing the substrate, the electrochromic layer being at least located in a first region, the orthographic projection of the electrochromic layer on the substrate covering the orthographic projection of the thin-film transistors on the substrate; and an optical element disposed on the side of the substrate away from the array layer, the optical element being located in the first region, the optical element capable of emitting recognition light in the direction of the substrate, and the electrochromic layer being configured to absorb the recognition light. The electrochromic layer prevents recognition light from shining onto the thin-film transistors, avoiding the problem of screen flickering caused by leakage current in the thin-film transistors due to light exposure, thus improving the display effect and performance of the display panel.

Description

Technical Field

[0001] This application belongs to the field of display technology, and in particular relates to a display device and a display device driving method. Background Technology

[0002] Organic light-emitting diodes (OLEDs) and flat panel displays based on light-emitting diodes (LEDs) are widely used in various consumer electronics products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body, and wide range of applications, becoming the mainstream of display devices.

[0003] However, the performance of current OLED display products needs to be improved.

[0004] Therefore, there is an urgent need for a new display device and a display device driving method. Summary of the Invention

[0005] This application provides a display device and a display device driving method. When the optical element starts to work by emitting recognition light, the electrochromic layer can be converted from a transparent state to a light-absorbing state that can absorb the recognition light. The electrochromic layer can prevent the recognition light from shining on the thin film transistor, thereby avoiding the problem of screen flickering caused by the leakage current of the thin film transistor due to light exposure, and improving the display effect and performance of the display panel.

[0006] One embodiment of this application provides a display device including an adjacent first region and a second region, wherein the light transmittance of the first region is greater than that of the second region. The display device includes: a substrate; an array layer disposed on one side of the substrate, the array layer including thin-film transistors; an electrochromic layer at least partially disposed on the side of the thin-film transistors facing the substrate, the electrochromic layer being at least located in the first region, and the orthographic projection of the electrochromic layer on the substrate covering the orthographic projection of the thin-film transistors on the substrate; and an optical element disposed on the side of the substrate away from the array layer, the optical element being located in the first region, the optical element being capable of emitting identification light in the direction of the substrate, and the electrochromic layer being configured to absorb the identification light.

[0007] According to one aspect of this application, the electrochromic layer is disposed on the array layer; or, the electrochromic layer is disposed on the substrate; preferably, the substrate includes a substrate and at least two buffer layers disposed on one side of the substrate, the electrochromic layer and any of the buffer layers are disposed in the same layer, or the electrochromic layer is disposed between two adjacent buffer layers; preferably, the electrochromic layer includes a first sub-part disposed on the side of the thin film transistor facing the substrate, and a second sub-part surrounding at least a portion of the side surface of the thin film transistor; preferably, the first sub-part and the second sub-part are connected; preferably, the material of the electrochromic layer includes at least one of molybdenum oxide, nickel oxide, and molybdenum; preferably, the recognition light includes infrared light.

[0008] According to one aspect of this application, it further includes a display functional layer disposed on the side of the array layer opposite to the substrate and a signal line electrically connected to the thin film transistor or the display functional layer; the electrochromic layer includes a conductive material, and at least a portion of the electrochromic layer forms at least a portion of the signal line.

[0009] According to one aspect of this application, it further includes a first light-emitting structure located in the first region, the thin-film transistor including a first transistor electrically connected to the first light-emitting structure, the first transistor being located in the first region; when the optical element is operating, the first transistor is in a turned-off state; preferably, the display panel includes a first partition, the first partition including the first region and a portion of a second region surrounding the first region, the thin-film transistor located in the first partition being in a turned-off state when the optical element is operating;

[0010] Preferably, when the optical element is in operation, the thin-film transistor located in the second region is in a turned-off state.

[0011] According to one aspect of this application, the material of the electrochromic layer includes at least one of molybdenum oxide, nickel oxide, and molybdenum.

[0012] In another aspect, the present invention provides a display device driving method for the display device in any of the above embodiments. The display device driving method includes: sending a driving signal to an optical element, the optical element emitting identification light toward the location of the substrate of the display device; controlling an electrochromic layer to change from a transparent state to a light-absorbing state, wherein the electrochromic layer in the light-absorbing state absorbs the identification light, wherein the light transmittance of the electrochromic layer in the transparent state is greater than or equal to 50%.

[0013] According to another aspect of this application, in the light-absorbing state, the electrochromic layer is blue; preferably, the identification light includes infrared light.

[0014] According to another aspect of this application, the step of sending a drive signal to an optical element, wherein the optical element emits identification light in the direction of the substrate, further includes: turning off a first transistor located in a first region, so that a first light-emitting structure electrically connected to the first transistor and located in the first region does not emit light; preferably, the display panel includes a first partition, the first partition including the first region and a portion of a second region surrounding the first region, the step of sending a drive signal to an optical element, wherein the optical element emits identification light in the direction of the substrate, further includes: turning off the thin-film transistor located in the first partition; preferably, the step of sending a drive signal to an optical element, wherein the optical element emits identification light in the direction of the substrate, further includes: turning off the thin-film transistor located in the second region.

[0015] According to another aspect of this application, before the step of sending a drive signal to the optical element and the optical element emitting recognition light in the direction of the substrate, the method further includes: obtaining the distance between the face and the display device through a distance sensor; when the distance is less than a preset distance, sending a drive signal to the optical element and the optical element emitting recognition light in the direction of the substrate, turning off the first transistor located in the first region, so that the first light-emitting structure located in the first region and electrically connected to the first transistor does not emit light.

[0016] According to another aspect of this application, the step of sending a drive signal to an optical element, wherein the optical element emits identification light in the direction of the substrate, further includes: displaying a dynamic image in at least the first area.

[0017] In another aspect, the present invention provides a method for manufacturing a display device, the display device comprising an adjacent first region and a second region, wherein the light transmittance of the first region is greater than that of the second region, the method comprising the following steps: providing a substrate; forming an electrochromic layer on one side of the substrate, the electrochromic layer being at least located in the first region; forming an array layer on the side of the electrochromic layer away from the substrate, the array layer comprising thin-film transistors, the electrochromic layer being at least partially disposed on the side of the thin-film transistors facing the substrate, the orthographic projection of the electrochromic layer on the substrate covering the orthographic projection of the thin-film transistors on the substrate; providing an optical element disposed on the side of the substrate away from the array layer, the optical element being located in the first region, the optical element being capable of emitting identification light in the direction of the substrate, and the electrochromic layer being configured to absorb the identification light.

[0018] Compared with the prior art, the display device provided in this application includes a substrate, an array layer, an electrochromic layer, and optical elements. The optical elements can emit recognition light in the direction of the substrate. The recognition light is used to realize functions such as distance recognition, fingerprint recognition, or face recognition of the display device. The recognition light can be infrared light, laser light, etc. When the optical elements start to work by emitting recognition light, the electrochromic layer can change from a transparent state to a light-absorbing state that can absorb the recognition light, such as a blue state. Since the orthographic projection of the electrochromic layer on the substrate covers the orthographic projection of the thin film transistor on the substrate, the electrochromic layer can prevent the recognition light from shining on the thin film transistor, thereby avoiding the problem of screen flickering caused by the leakage current of the thin film transistor due to light exposure, and improving the display effect and performance of the display panel. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of the structure of a display device provided in one embodiment of the present invention;

[0021] Figure 2 One embodiment provided Figure 1 Schematic diagram of the cross-sectional structure at point BB;

[0022] Figure 3 This is provided in another embodiment. Figure 1 Schematic diagram of the cross-sectional structure at point BB;

[0023] Figure 4 This is yet another embodiment provided. Figure 1 Schematic diagram of the cross-sectional structure at point BB;

[0024] Figure 5 This is a schematic diagram of the structure of a display device in its working state according to an embodiment of the present invention;

[0025] Figure 6 This is a schematic diagram of the display device in its working state according to another embodiment of the present invention;

[0026] Figure 7 This is a schematic diagram of the display device in its working state according to another embodiment of the present invention;

[0027] Figure 8 This is a flowchart of a display device driving method provided in one embodiment of the present invention;

[0028] Figure 9 This is a flowchart of a method for manufacturing a display device according to an embodiment of the present invention;

[0029] Figures 10 to 12 This is a schematic diagram of the structure obtained by the display device manufacturing method provided in one embodiment of the present invention.

[0030] In the attached image:

[0031] 1-Substrate; 11-Substrate; 12-Inorganic layer; 13-Buffer layer; 2-Array layer; 3-Electrochromic layer; 31-First sub-section; 32-Second sub-section; 4-Planarization layer; 5-Pixel definition layer; 6-Display function layer; 61-First electrode layer; 62-Light-emitting layer; 63-Second electrode layer; 7-Optical element; F1-First light-emitting structure; L-Signal line; T-Thin film transistor; Y-Active layer; G-Gate; S-Source; D-Drain; E-First partition; AA1-First region; AA2-Second region. Detailed Implementation

[0032] The features and exemplary embodiments of various aspects of this application will now be described in detail. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain this application and are not configured to limit this application. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples of this application.

[0033] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0034] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0035] Various modifications and variations can be made to this application without departing from its spirit or scope, which will be apparent to those skilled in the art. Therefore, this application is intended to cover modifications and variations falling within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the embodiments provided in this application can be combined with each other without contradiction.

[0036] This application provides a display device and a display device driving method, which will be described below in conjunction with the accompanying drawings. Figures 1 to 12 Various embodiments of the display device and the display device driving method will be described.

[0037] Please see Figures 1 to 3 This application provides a display device including an adjacent first region AA1 and a second region AA2, wherein the light transmittance of the first region AA1 is greater than that of the second region AA2. The display device includes: a substrate 1; an array layer 2 disposed on one side of the substrate 1, the array layer 2 including a thin film transistor T; an electrochromic layer 3, at least partially disposed on the side of the thin film transistor T facing the substrate 1, the electrochromic layer 3 being at least located in the first region AA1, the orthographic projection of the electrochromic layer 3 on the substrate 1 covering the orthographic projection of the thin film transistor T on the substrate 1; and an optical element 7 disposed on the side of the substrate 1 away from the array layer 2, and the optical element 7 being located in the first region AA1. The optical element 7 can emit identification light in the direction of the substrate 1, and the electrochromic layer 3 is configured to absorb the identification light.

[0038] The display device provided in this application includes a substrate 1, an array layer 2, an electrochromic layer 3, and an optical element 7. The optical element 7 can emit recognition light in the direction of the substrate 1. The recognition light is used to realize functions such as distance recognition, fingerprint recognition, or face recognition of the display device. The recognition light can be infrared light, laser light, or other light. When the optical element 7 starts to work by emitting recognition light, the electrochromic layer 3 can change from a transparent state to a light-absorbing state that can absorb the recognition light, such as a blue state. Since the orthographic projection of the electrochromic layer 3 on the substrate 1 covers the orthographic projection of the thin film transistor T on the substrate 1, the electrochromic layer 3 can prevent the recognition light from shining on the thin film transistor T, thereby avoiding the problem of screen flickering caused by the leakage current of the thin film transistor T due to light exposure, and improving the display effect and performance of the display panel.

[0039] Infrared light, also known as infrared radiation, is an electromagnetic wave in the infrared band, with a wavelength range of 0.76-1000 micrometers, between visible light and microwaves. It is invisible light with a frequency lower than red light. Different colors have different absorption rates for different wavelengths of light. Generally, the darker the color, the higher the absorption rate. In this embodiment, the electrochromic layer 3 can be controlled to change from a transparent state to an absorbing state capable of absorbing infrared light, such as a blue state, to improve the absorption performance of the electrochromic layer 3 for infrared light and prevent infrared light from irradiating the thin-film transistor T.

[0040] In this embodiment, the display panel includes an adjacent first region AA1 and a second region AA2. The light transmittance of the first region AA1 is greater than that of the second region AA2. The first region AA1 can be equipped with optical elements 7 that have high light requirements. For example, an infrared face recognition element can be provided in the first region AA1. The infrared face recognition element can emit infrared light in the direction of the substrate 1 to realize face recognition. When the infrared light shines on the thin film transistor T, it will cause the thin film transistor T to generate leakage current, affecting the performance of the thin film transistor T, and thus causing the display panel to flicker.

[0041] To address the aforementioned issues, in this embodiment, when the optical element 7 begins emitting recognition light, the electrochromic layer 3 can be converted from a transparent state to a light-absorbing state capable of absorbing the recognition light. This allows the electrochromic layer 3 to block the recognition light from reaching the thin-film transistor T. When the optical element 7 is not emitting recognition light, i.e., not performing fingerprint or facial recognition, the electrochromic layer 3 can be kept transparent to improve the light transmittance of the display device. In other words, by controlling the electrochromic layer 3, the absorption of recognition light in the first area AA1 of the display device can be controlled within a controllable area and for a controllable time.

[0042] Optionally, substrate 1 can be a rigid substrate, such as a glass substrate; or it can be a flexible substrate, made of polyimide, polystyrene, polyethylene terephthalate, poly(p-xylene), polyethersulfone, or polyethylene naphthalate. Substrate 1 is mainly used to support the devices mounted on it.

[0043] Optionally, the array layer 2 includes pixel circuitry, which includes a plurality of thin-film transistors (TFTs) T. For example, the pixel circuitry disposed on the array layer 2 includes TFTs T and a storage capacitor. The TFTs T include an active layer Y, a gate G, a source S, and a drain D.

[0044] It should be noted that the electrochromic layer 3 is disposed on the side of the thin film transistor T facing the substrate 1. That is, the electrochromic layer 3 can be disposed between the array layer 2 and the substrate 1, or disposed in the array layer 2, located between the thin film transistor T and the substrate 1, or disposed on the substrate 1. There are no special limitations, as long as the electrochromic layer 3 can block the light from the side of the thin film transistor T facing the substrate 1 from shining onto the thin film transistor T.

[0045] Please see Figure 3 Optionally, the substrate 1 includes a double-layer substrate 11, an inorganic layer 12 disposed between the substrates 11, and at least one buffer layer 13 disposed on the side of the inorganic layer 12 facing the array layer 2. The electrochromic layer 3 may be disposed between the buffer layer 13 and the array layer 2, or between the two buffer layers 13, without any particular limitation.

[0046] Optionally, the substrate 1 includes a substrate 11 and at least two buffer layers 13 disposed on one side of the substrate 11. The electrochromic layer 3 and any one of the buffer layers 13 are disposed in the same layer, or the electrochromic layer 3 is disposed between two adjacent buffer layers 13.

[0047] Please see Figure 4 Optionally, the electrochromic layer 3 includes a first sub-part 31 disposed on the side of the thin film transistor T facing the substrate 1, and a second sub-part 32 surrounding at least a portion of the side surface of the thin film transistor T.

[0048] Understandably, the first sub-part 31 can block and absorb light from the side of the thin-film transistor T facing the substrate 1, while the second sub-part 32 can block and absorb refracted light directed towards the side of the thin-film transistor T, so as to prevent the identification light from shining onto the thin-film transistor T from the side after refraction.

[0049] Optionally, the first sub-part 31 and the second sub-part 32 are connected, and the two can be an integrated structure to ensure the shielding effect.

[0050] In some optional embodiments, the display device further includes a display functional layer 6 disposed on the side of the array layer 2 away from the substrate 1 and a signal line L electrically connected to the thin film transistor T or the display functional layer 6; the electrochromic layer 3 includes a conductive material, and at least a portion of the electrochromic layer 3 forms at least a portion of the signal line L.

[0051] In this embodiment, the signal line L can specifically be a voltage signal line L, such as a high-level voltage signal line LVDD or a low-level voltage signal line LVSS. When the electrochromic layer 3 is prepared using a conductive material such as a metal, at least a portion of the electrochromic layer 3 can be used as the signal line L to simplify the preparation process and reduce production costs. Optionally, the electrochromic layer 3 may also include organic materials.

[0052] Optionally, in the direction away from the substrate 1, the display functional layer 6 may include a first electrode layer 61, a light-emitting layer 62, and a second electrode layer 63 stacked together.

[0053] Optionally, the light-emitting layer 62 includes one or more of the following: an electron injection layer, an electron transport layer, a light-emitting material layer, a hole blocking layer, an electron blocking layer, a hole transport layer, and a hole injection layer. The specific type of light-emitting layer 62 can be selected, and there are no particular limitations. The electron injection layer, electron transport layer, and hole blocking layer can be disposed between the second electrode layer 63 and the light-emitting material layer. The electron blocking layer, hole transport layer, and hole injection layer can be disposed between the first electrode layer 61 and the light-emitting material layer.

[0054] The material of the first electrode layer 61 is generally a material with a high work function to improve hole injection efficiency. It can be gold (Au), platinum (Pt), titanium (Ti), silver (Ag), indium tin oxide (ITO), zinc tin oxide (IZO), or a transparent conductive polymer (such as polyaniline). For example, the first electrode layer 61 can be made of ITO-Ag-ITO composite material, without any special limitations.

[0055] The material of the second electrode layer 63 can be one of the following metals: silver (Ag), aluminum (Al), lithium (Li), magnesium (Mg), ytterbium (Yb), calcium (Ca), or indium (In). It can also be an alloy of the aforementioned metals, such as magnesium-silver alloy (Mg / Ag) or lithium-aluminum alloy (Li / Al). This embodiment does not limit the material in this regard.

[0056] In some optional embodiments, the display panel further includes a planarization layer 4 and a pixel definition layer 5 disposed on the side of the thin-film transistor T opposite to the substrate 11.

[0057] Please see Figure 5 In some optional embodiments, the display device further includes a first light-emitting structure F1 located in the first region AA1. The thin-film transistor T of the first light-emitting structure F1 includes a first transistor electrically connected to the first light-emitting structure F1. The first transistor is located in the first region AA1. When the optical element 7 is working, the first transistor is in the off state.

[0058] Considering that the first transistor only generates leakage current when it is illuminated by the recognition light during operation, in this embodiment, the first transistor can be controlled to be in the off state when the optical element 7 is working, that is, the first transistor does not work, and the first light-emitting structure F1 connected to the first transistor does not emit light, so that the first area AA1 is not displayed. Even if the first transistor is illuminated by the recognition light emitted by the optical element 7, leakage current will not be generated, thus avoiding the problem of screen flickering.

[0059] Please see Figure 6Optionally, the display panel includes a first partition E, which includes a first area AA1 and a portion of a second area AA2 surrounding the first area AA1. When the optical element 7 is working, the thin-film transistor T located in the first partition E is in a turned-off state, that is, the first area AA1 and the portion of the second area AA2 adjacent to the first area AA1 are not displayed, in order to avoid screen flickering during fingerprint or face recognition. The area F outside the first partition E can be displayed normally.

[0060] Please see Figure 7 Optionally, when the optical element 7 is working, the thin-film transistor T located in the second region AA2 is in the off state, that is, the thin-film transistor T in the entire display device is in the off state when the optical element 7 is working, and the display device is in the off state, so as to avoid the problem of screen flickering when performing fingerprint or face recognition.

[0061] Optionally, the electrochromic layer 3 may be made of at least one of molybdenum, molybdenum oxide, and nickel oxide.

[0062] Please see Figure 8 The present invention also provides a display device driving method for any of the display devices described in the above embodiments. The display device driving method includes:

[0063] S110: A drive signal is sent to the optical element 7, and the optical element 7 emits recognition light toward the location of the substrate 1 of the display device;

[0064] S120: Control the electrochromic layer 3 to change from a transparent state to a light-absorbing state. In the light-absorbing state, the electrochromic layer 3 absorbs the recognition light, wherein the light transmittance of the electrochromic layer in the transparent state is greater than or equal to 50%.

[0065] The display device driving method provided in this embodiment of the invention can send a driving signal to the optical element 7 when the display device performs face or fingerprint recognition, so that the optical element 7 emits recognition light toward the substrate 1 of the display device, and controls the electrochromic layer 3 to change from a transparent state to a light-absorbing state. The electrochromic layer 3 in the light-absorbing state absorbs the recognition light. For example, the electrochromic layer 3 in the light-absorbing state is blue. Since the orthographic projection of the electrochromic layer 3 on the substrate 1 covers the orthographic projection of the thin film transistor T on the substrate 1, the electrochromic layer 3 can prevent the recognition light from shining on the thin film transistor T, thereby avoiding the problem of screen flickering caused by the leakage current of the thin film transistor T due to light exposure, and improving the display effect and performance of the display panel.

[0066] When the optical element 7 is not emitting recognition light, i.e., when fingerprint or face recognition is not being performed, the electrochromic layer 3 can be made transparent to improve the light transmittance of the display device. In other words, by controlling the electrochromic layer 3, the absorption of recognition light in the first area AA1 of the display device can be controlled in terms of area and time.

[0067] In step S110, depending on the recognition work to be performed, the driving signal can correspond to a face recognition signal or a fingerprint recognition signal, etc. For example, when a face is detected to be close to the display device, a driving signal can be sent to the optical element 7, and the optical element 7 emits recognition light toward the location of the substrate 1 of the display device.

[0068] In step S120, the electrochromic layer 3 can be prepared by vacuum evaporation deposition, sputtering deposition (PVD), sputtering deposition (CVD), spray pyrolysis, anodic oxidation, hydrothermal method and solvothermal method.

[0069] By applying electricity or pressure to the electrochromic layer 3, the electrochromic layer 3 can be changed from a transparent state to a light-absorbing state. In the light-absorbing state, the electrochromic layer 3 can be blue, black, gray, or other colors that are good for recognizing light absorption.

[0070] In some optional embodiments, the step of sending a drive signal to the optical element 7 and the optical element 7 emitting identification light in the direction of the substrate 1 further includes: turning off the first transistor located in the first region AA1 so that the first light-emitting structure F1 located in the first region AA1 and electrically connected to the first transistor does not emit light.

[0071] The first transistor can be controlled to be in a turned-off state when the optical element 7 is working, meaning the first transistor is not working and the first light-emitting structure F1 connected to the first transistor does not emit light. This prevents the first area AA1 from being displayed. Even if the first transistor is illuminated by the recognition light emitted by the optical element 7, no leakage current will be generated, avoiding screen flickering. Of course, depending on actual needs, the thin-film transistors T in the entire display device can also be kept in a turned-off state when the optical element 7 is working, meaning the display device is in a screen-off state, avoiding screen flickering during fingerprint or face recognition.

[0072] Optionally, the display panel includes a first partition E, which includes a first region AA1 and a portion of a second region AA2 surrounding the first region AA1. The step of sending a drive signal to the optical element 7 and the optical element 7 emitting recognition light in the direction of the substrate 1 further includes: turning off the thin-film transistor T located in the first partition E, i.e., the first region AA1 and the portion of the second region AA2 adjacent to the first region AA1 are not displayed, to avoid screen flickering during fingerprint or facial recognition. The region F outside the first partition E can be displayed normally.

[0073] Optionally, the step of sending a drive signal to the optical element 7 and having the optical element 7 emit recognition light in the direction of the substrate 1 further includes: turning off the thin-film transistor T located in the second region AA2. That is, the thin-film transistor T throughout the display device is in a turned-off state when the optical element 7 is working, and the display device is in a screen-off state, avoiding screen flickering problems when performing fingerprint or face recognition.

[0074] Optionally, the distance between the face and the display device can be obtained by a distance sensor; when the distance is less than a preset distance, a drive signal is sent to the optical element 7, and the optical element 7 emits recognition light in the direction of the substrate 1, turning off the first transistor located in the first region AA1, so that the first light-emitting structure F1 located in the first region AA1, which is electrically connected to the first transistor, does not emit light.

[0075] The distance between the face and the display device, as measured by the distance sensor, determines whether the user needs to undergo facial recognition.

[0076] In some optional embodiments, the step of sending a drive signal to the optical element 7 and the optical element 7 emitting identification light in the direction of the substrate 1 further includes: displaying a dynamic image in at least the first region AA1.

[0077] It should be noted that when displaying dynamic images in the first area AA1, the dynamic images can be used to mask the screen flicker caused by the thin-film transistor T being illuminated, making the flicker less noticeable under dynamic images and reducing its impact. Simultaneously, since the screen illuminates when illuminated, this illumination phenomenon is fully utilized to improve screen flicker. Of course, the first area AA1 can also display static images, using the screen flicker caused by the thin-film transistor T being illuminated as a special effect for the displayed static image, thus incorporating screen flicker as a visual effect to enhance the user experience.

[0078] Please see Figure 9 The present invention also provides a method for manufacturing a display device. The display device includes an adjacent first region and a second region, wherein the light transmittance of the first region is greater than that of the second region. The method for manufacturing the display device includes the following steps:

[0079] S101: Provide substrate 1, such as Figure 10 As shown;

[0080] S102: An electrochromic layer 3 is formed on one side of the substrate 1, wherein the electrochromic layer is located at least in the first region AA1, such as Figure 11 As shown;

[0081] S103: An array layer 2 is formed on the side of the electrochromic layer 3 facing away from the substrate 1. The array layer 2 includes a thin-film transistor T. The electrochromic layer 3 is at least partially disposed on the side of the thin-film transistor T facing the substrate 1. The orthographic projection of the electrochromic layer 3 on the substrate 1 covers the orthographic projection of the thin-film transistor T on the substrate 1. Figure 12 As shown;

[0082] S104: An optical element 7 is provided, which is disposed on the side of the substrate 1 away from the array layer 2 and is located in the first region AA1. The optical element 7 can emit recognition light in the direction of the substrate 1. The electrochromic layer 3 is configured to absorb the recognition light, such as... Figure 2 As shown.

[0083] The display device fabrication method provided in this embodiment of the invention forms an electrochromic layer 3 in a first region AA1, and the orthographic projection of the electrochromic layer 3 on the substrate 1 covers the orthographic projection of the thin-film transistor T on the substrate 1. This allows the electrochromic layer 3 to prevent recognition light from shining on the thin-film transistor T, thereby avoiding the problem of screen flickering caused by leakage current of the thin-film transistor T due to light exposure, and improving the display effect and performance of the display panel.

[0084] In step S101, substrate 1 can be formed by processes such as coating. Substrate 1 may include a double-layer substrate 11, an inorganic layer 12 disposed between the substrates 11, and at least one buffer layer 13 disposed on the side of the inorganic layer 12 facing the array layer 2. Electrochromic layer 3 may be disposed between the buffer layer 13 and the array layer 2, or between the two buffer layers 13, without any particular limitation.

[0085] In step S102, the electrochromic layer 3 can be formed by processes such as coating and photolithography.

[0086] In step S103, the electrochromic layer 3 includes a first sub-part 31 disposed on the side of the thin film transistor facing the substrate, and a second sub-part 32 surrounding at least a portion of the side surface of the thin film transistor.

[0087] It is understood that the electrochromic layer 3 may include a first sub-part 31 disposed on the side of the thin film transistor T facing the substrate 1, and a second sub-part 32 surrounding at least a portion of the side surface of the thin film transistor T.

[0088] In step S104, the optical element 7 can be a distance recognition element, a fingerprint recognition element, or a face recognition element, for example, the optical element 7 can be an infrared face recognition element.

[0089] The display device provided in the embodiments of the present invention can be an organic light-emitting diode (OLED) display device, a quantum dot light-emitting diode (QLED) device, or a micro flat panel display device (Micro-OLED or Micro-LED), etc.

[0090] The display device provided in this application embodiment can be applied to mobile phones, or to any electronic product with display function, including but not limited to the following categories: televisions, laptops, desktop monitors, tablets, digital cameras, smart bracelets, smart glasses, in-vehicle displays, medical devices, industrial control equipment, touch interactive terminals, etc. This application embodiment does not make any special limitations on these.

[0091] The above are merely specific embodiments of this application. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, modules, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. It should be understood that the protection scope of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the protection scope of this application.

[0092] It should also be noted that the exemplary embodiments mentioned in this application describe methods or systems based on a series of steps or apparatus. However, this application is not limited to the order of the above steps; that is, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

Claims

1. A display device, characterized in that, The display device includes an adjacent first region and a second region, wherein the light transmittance of the first region is greater than that of the second region. substrate; An array layer is disposed on one side of the substrate, and the array layer includes thin-film transistors; An electrochromic layer is at least partially disposed on the side of the thin film transistor facing the substrate. The electrochromic layer is at least located in the first region. The orthographic projection of the electrochromic layer on the substrate covers the orthographic projection of the thin film transistor on the substrate. The electrochromic layer includes a first sub-part disposed on the side of the thin film transistor facing the substrate and a second sub-part surrounding at least a portion of the side surface of the thin film transistor. An optical element is disposed on a substrate on the side away from the array layer and located in the first region. The optical element can emit identification light in the direction of the substrate. The electrochromic layer is configured to absorb the identification light and includes a transparent state and a light-absorbing state capable of absorbing the identification light. A first light-emitting structure is located in the first region, and the thin-film transistor includes a first transistor electrically connected to the first light-emitting structure, the first transistor being located in the first region; When the optical element is working, the first transistor is in the off state. The distance between the face and the display device is obtained by the distance sensor. When the distance is less than a preset distance, a drive signal is sent to the optical element. The optical element emits recognition light in the direction of the substrate and turns off the first transistor located in the first region, so that the first light-emitting structure located in the first region and electrically connected to the first transistor does not emit light.

2. The display device according to claim 1, characterized in that, The electrochromic layer is disposed on the array layer; or... The electrochromic layer is disposed on the substrate.

3. The display device according to claim 1, characterized in that, The substrate includes a substrate and at least two buffer layers disposed on one side of the substrate. The electrochromic layer and any of the buffer layers are disposed in the same layer, or the electrochromic layer is disposed between two adjacent buffer layers.

4. The display device according to claim 1, characterized in that, The first sub-part and the second sub-part are connected.

5. The display device according to claim 1, characterized in that, The electrochromic layer is made of at least one of molybdenum oxide, nickel oxide, and molybdenum.

6. The display device according to claim 1, characterized in that, The identification light includes infrared light.

7. The display device according to claim 1, characterized in that, It also includes a display functional layer disposed on the side of the array layer opposite to the substrate, and signal lines electrically connected to the thin-film transistor or the display functional layer; The electrochromic layer includes a conductive material, and at least a portion of the electrochromic layer forms at least a portion of the signal line.

8. The display device according to claim 7, characterized in that, The signal lines include high-level voltage signal lines or low-level voltage signal lines.

9. The display device according to claim 1, characterized in that, The display device includes a first partition, which includes a first region and a portion of a second region surrounding the first region. When the optical element is in operation, the thin-film transistor located in the first partition is in a turned-off state.

10. The display device according to claim 9, characterized in that, When the optical element is in operation, the thin-film transistor located in the second region is in the off state.

11. A display device driving method, used in the display device according to any one of claims 1 to 10, characterized in that, The display device driving method includes: A drive signal is sent to an optical element, which emits recognition light toward the location of the substrate of the display device; The electrochromic layer is controlled to change from a transparent state to a light-absorbing state. In the light-absorbing state, the electrochromic layer absorbs the recognition light, wherein the light transmittance of the electrochromic layer in the transparent state is greater than or equal to 50%.

12. The display device driving method according to claim 11, characterized in that, In the light-absorbing state, the electrochromic layer is at least one of blue, black, and gray.

13. The display device driving method according to claim 11, characterized in that, The identification light includes infrared light.

14. The display device driving method according to claim 11, characterized in that, The step of sending a drive signal to an optical element, wherein the optical element emits identification light in the direction of the substrate, further includes: turning off a first transistor located in a first region so that a first light-emitting structure located in the first region and electrically connected to the first transistor does not emit light.

15. The display device driving method according to claim 14, characterized in that, The display device includes a first partition, the first partition including a first region and a portion of a second region surrounding the first region, and the step of sending a drive signal to an optical element, the optical element emitting identification light in the direction of the substrate, further includes: turning off the thin-film transistor located in the first partition.

16. The display device driving method according to claim 15, characterized in that, The step of sending a drive signal to an optical element, wherein the optical element emits identification light in the direction of the substrate, further includes: turning off the thin-film transistor located in the second region.

17. A method for manufacturing a display device, used to manufacture the display device according to any one of claims 1 to 10, characterized in that, The display device includes an adjacent first region and a second region, wherein the light transmittance of the first region is greater than that of the second region, and the method for manufacturing the display device includes the following steps: Provide substrate; An electrochromic layer is formed on one side of the substrate, and the electrochromic layer is located at least in the first region; An array layer is formed on the side of the electrochromic layer away from the substrate. The array layer includes thin-film transistors. The electrochromic layer is at least partially disposed on the side of the thin-film transistors facing the substrate. The orthographic projection of the electrochromic layer on the substrate covers the orthographic projection of the thin-film transistors on the substrate. An optical element is provided, the optical element is disposed on the side of the substrate away from the array layer and the optical element is located in the first region, the optical element can emit identification light in the direction of the substrate, and the electrochromic layer is configured to absorb the identification light.

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