Methods, apparatus and electronic devices for regulating the performance of memory devices

Abstract

This invention provides a method, apparatus, and electronic device for performance control of memory devices, belonging to the field of memory technology. The method includes: using SRIM software to perform ion implantation simulation for all initial ion implantation conditions, obtaining a set of ion doping distribution parameters corresponding to each initial ion implantation condition; selecting the optimal set of ion doping distribution parameters that meets set conditions from the set of ion doping distribution parameters for all initial ion implantation conditions; and simulating the overall fabrication process of the memory device using the initial ion implantation conditions corresponding to the optimal set of ion doping distribution parameters based on TCAD software. This invention combines SRIM and TCAD software, and for the CNLDD implantation process at the device drain in the process flow, selects the initial ion implantation conditions corresponding to the optimal set of ion doping distribution parameters from multiple initial ion implantation conditions as the best implantation conditions, achieving precise control of the ion implantation mode to achieve high performance of the memory device.

Description

Technical Field

[0001] This invention relates to the field of memory technology, and more specifically to a method for regulating the performance of a memory device, a device for regulating the performance of a memory device, an electronic device, a machine-readable storage medium, and a computer program product. Background Technology

[0002] Ion implantation, a semiconductor doping technology developed in the 1960s, is used in memory chip fabrication. Its advancements have driven progress in the integrated circuit field. Currently, ion implantation is the primary doping process used in the manufacturing of very large-scale integrated circuits. Compared to other semiconductor doping processes such as diffusion, ion implantation ensures that doping purity is unaffected by impurity sources and allows for precise control of the number of dopant atoms or ions implanted into the substrate. By controlling the energy and dosage of the implanted ions and by implanting the same or different impurities multiple times, impurity distribution can be manipulated.

[0003] Since ion implantation technology involves numerous parameters, the impact of ion implantation technology under various parameter settings on the electrical performance of memory devices needs to be systematically analyzed. How to achieve precise control of ion implantation modes to achieve high performance of memory devices has become an urgent problem to be solved. Summary of the Invention

[0004] The purpose of this invention is to provide a method, apparatus, and electronic device for regulating the performance of memory devices, in order to solve the urgent problem of how to achieve precise regulation of ion implantation mode to achieve high performance of memory devices.

[0005] To achieve the above objectives, embodiments of the present invention provide a method for regulating the performance of a memory device, comprising:

[0006] Obtain multiple initial ion implantation conditions for the ion implantation process of the memory drain;

[0007] Ion implantation simulation was performed on all the initial ion implantation conditions using SRIM software to obtain the ion doping distribution parameter set corresponding to each initial ion implantation condition; the ion doping distribution parameter set includes the average penetration depth of ions and the peak concentration of ions.

[0008] The optimal set of ion doping distribution parameters that meets the set conditions is selected from the set of ion doping distribution parameters of all the initial ion implantation conditions.

[0009] The overall fabrication process of the memory with the selected optimal ion doping distribution parameter set and corresponding initial ion implantation conditions is simulated using TCAD software.

[0010] Optionally, the step of selecting the optimal ion doping distribution parameter set that satisfies the set conditions from the set of ion doping distribution parameters of all the initial ion implantation conditions includes:

[0011] From the set of ion doping distribution parameters for all the initial ion implantation conditions, select a set of ion doping distribution parameters that meets the set conditions as the optimal set of ion doping distribution parameters; or...

[0012] Multiple sets of ion doping distribution parameters that meet the set conditions are selected from the set of ion doping distribution parameters of all the initial ion implantation conditions; the set of ion doping distribution parameters composed of the average value of the average penetration depth of ions and the average value of the peak concentration of ions in the multiple sets of ion doping distribution parameters is the optimal set of ion doping distribution parameters.

[0013] Optionally, the set conditions include an average ion penetration depth of 90 nm to 115 nm and an ion peak concentration greater than or equal to 1 × 10⁻⁶. 15 cm-3.

[0014] Optionally, the simulation of the overall fabrication process of the memory using TCAD software with initial ion implantation conditions corresponding to the optimal ion doping distribution parameter set includes:

[0015] The overall fabrication process of the memory using the selected optimal ion doping distribution parameter set was simulated using the Sprocess module in TCAD software, and the first simulation result was obtained.

[0016] Based on the Sdevice module in TCAD software, the first simulation results are used to perform device electrical performance simulation and / or reliability performance simulation to obtain the second simulation results.

[0017] Simulation parameters are obtained based on the second simulation results; the simulation parameters include the device's programming erase threshold voltage window and / or the number of cycles for reliability.

[0018] Optionally, the initial ion implantation conditions include at least two of the following: implantation energy, masking layer type, implantation dose, masking layer thickness, number of implantations, and implantation angle.

[0019] On the other hand, embodiments of the present invention also provide a memory device performance regulation device, comprising:

[0020] The acquisition module is used to acquire multiple initial ion implantation conditions for the ion implantation process of the memory drain.

[0021] The first simulation module is used to perform ion implantation simulation on all the initial ion implantation conditions using SRIM software, and obtain the ion doping distribution parameter set corresponding to each initial ion implantation condition; the ion doping distribution parameter set includes the average penetration depth of ions and the peak concentration of ions.

[0022] The screening module is used to select the optimal set of ion doping distribution parameters that meet the set conditions from the set of ion doping distribution parameters of all the initial ion implantation conditions.

[0023] The second simulation module is used to simulate the overall fabrication process of the memory based on the TCAD software, using the initial ion implantation conditions corresponding to the selected optimal ion doping distribution parameter set.

[0024] Optionally, the step of selecting the optimal ion doping distribution parameter set that satisfies the set conditions from the set of ion doping distribution parameters of all the initial ion implantation conditions includes:

[0025] From the set of ion doping distribution parameters for all the initial ion implantation conditions, select a set of ion doping distribution parameters that meets the set conditions as the optimal set of ion doping distribution parameters; or...

[0026] Multiple sets of ion doping distribution parameters that meet the set conditions are selected from the set of ion doping distribution parameters of all the initial ion implantation conditions; the set of ion doping distribution parameters composed of the average value of the average penetration depth of ions and the average value of the peak concentration of ions in the multiple sets of ion doping distribution parameters is the optimal set of ion doping distribution parameters.

[0027] Optionally, the set conditions include an average ion penetration depth of 90 nm to 115 nm and an ion peak concentration greater than or equal to 1 × 10⁻⁶. 15 cm-3.

[0028] Optionally, the simulation of the overall fabrication process of the memory using TCAD software with initial ion implantation conditions corresponding to the optimal ion doping distribution parameter set includes:

[0029] The overall fabrication process of the memory using the selected optimal ion doping distribution parameter set was simulated using the Sprocess module in TCAD software, and the first simulation result was obtained.

[0030] Based on the Sdevice module in TCAD software, the first simulation results are used to perform device electrical performance simulation and / or reliability performance simulation to obtain the second simulation results.

[0031] Simulation parameters are obtained based on the second simulation results; the simulation parameters include the device's programming erase threshold voltage window and / or the number of cycles for reliability.

[0032] Optionally, the initial ion implantation conditions include at least two of the following: implantation energy, masking layer type, implantation dose, masking layer thickness, number of implantations, and implantation angle.

[0033] On the other hand, the present invention also provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the above-described memory device performance regulation method.

[0034] On the other hand, the present invention also provides a machine-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the above-described memory device performance regulation method.

[0035] On the other hand, the present invention also provides a computer program product, including a computer program that, when executed by a processor, implements the above-described memory device performance regulation method.

[0036] Through the above technical solution, the embodiments of the present invention combine SRIM software and TCAD software for ion implantation simulation, mainly targeting the CNLDD implantation process of the device drain in the process flow. Among multiple initial ion implantation conditions, the initial ion implantation conditions corresponding to the optimal ion doping distribution parameter set are selected as the best implantation conditions, so as to achieve precise control of ion implantation mode to achieve high performance of memory devices.

[0037] Other features and advantages of the embodiments of the present invention will be described in detail in the following detailed description section. Attached Figure Description

[0038] The accompanying drawings are provided to further illustrate embodiments of the present invention and form part of the specification. They are used together with the following detailed description to explain the embodiments of the present invention, but do not constitute a limitation thereof. In the drawings:

[0039] Figure 1 This is one of the flowcharts illustrating the memory device performance regulation method provided by the present invention;

[0040] Figure 2 This is the second flowchart illustrating the memory device performance regulation method provided by the present invention;

[0041] Figure 3 This is a schematic diagram of the substrate doping distribution after vertical angle implantation provided by the present invention;

[0042] Figure 4 This is a schematic diagram of the substrate doping distribution under the optimal implantation conditions corresponding to the optimal ion doping distribution parameter set provided by the present invention, showing the implantation angle.

[0043] Figure 5 This is a schematic diagram of the electrical performance simulated by the TCAD software provided by the present invention;

[0044] Figure 6 This is a schematic diagram of the memory device performance regulation device provided by the present invention;

[0045] Figure 7 This is a schematic diagram of the structure of the electronic device provided by the present invention. Detailed Implementation

[0046] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the scope of the present invention.

[0047] Method Implementation Examples

[0048] Please refer to Figure 1 This invention provides a method for regulating the performance of a memory device, comprising:

[0049] Step 100: Obtain multiple initial ion implantation conditions for the ion implantation process of the memory drain.

[0050] This document describes multiple initial ion implantation conditions for the ion implantation process of the memory drain in electronic devices. These initial ion implantation conditions include at least two of the following: implantation energy, masking layer type, implantation dose, masking layer thickness, number of implantations, and implantation angle. In one embodiment, the initial ion implantation conditions include the implantation energy, masking layer type, implantation dose, masking layer thickness, number of implantations, and implantation angle in the CNLDD implantation process of the memory device drain. Masking layer types include Si3N4, SiO2, etc. Target materials include silicon or gallium arsenide. Ion types include boron (B), phosphorus (P), or arsenic (As), etc. The implantation energy, ranging from tens to hundreds of keV, determines the penetration depth of ions in the target material, while the implantation dose determines the doping concentration in the target material. These parameters can be set in SRIM software after confirmation.

[0051] Step 200: Use SRIM software to perform ion implantation simulation on all the initial ion implantation conditions to obtain the ion doping distribution parameter set corresponding to each initial ion implantation condition.

[0052] The electronic device uses SRIM software to perform ion implantation simulations for all the initial ion implantation conditions, obtaining a set of ion doping distribution parameters corresponding to each initial ion implantation condition. The set of ion doping distribution parameters includes the average ion penetration depth and the peak ion concentration.

[0053] Specifically, modern semiconductor processes typically employ 15 to 25 steps of ion implantation. The most crucial process parameters are implantation energy, masking layer type, implantation dose, number of implantations, and implantation angle. In this embodiment of the invention, when bombarding a silicon substrate with a beam of boron ions, some scattered boron ions are reflected at the target surface and cannot penetrate the silicon substrate. The boron ions that do penetrate the substrate are referred to as implanted boron ions. These scattered boron ions continuously collide with the nuclei and electrons of the target atoms, losing energy until they finally stop at a certain position on the silicon substrate. Since these collisions are random, studying the distribution of these doped ions near the substrate drain region requires considering the deflection angle of a large number of ions, energy loss, the distance traveled between adjacent collisions, and the total distance traveled. A Gaussian distribution of these ions can be used to quickly estimate the doping distribution of the implanted ions within the target. Key parameters after parameterizing this process are: average ion penetration depth and peak ion concentration.

[0054] The electronic device's parameters are set in the SRIM software based on multiple initial ion implantation conditions. The simulation continues, and the SRIM software generates data on ion depth distribution, energy loss, and doping distribution within the material. Upon completion of the simulation, the SRIM software generates several key results: the average ion penetration depth and peak ion concentration are important parameters describing ion distribution. These values ​​can be used to estimate the depth and concentration distribution of the doped layer.

[0055] This invention utilizes SRIM software to meticulously calculate and simulate every detail of the collision process between implanted ions and target material atoms under different initial ion implantation conditions (different implantation energies, masking layer types, implantation doses, implantation times, and implantation angles), and can provide a simulation image of the final stopping range of the implanted ions. This method summarizes the average penetration depth and peak concentration patterns of ions under different modes, avoiding distortion of the gradient doping concentration distribution curve on the silicon surface and enabling the selection of an appropriate ion implantation mode. The above discussion pertains to a single implantation method; multiple implantations are required to achieve gradient doping. TRIM software is used to investigate the influence of various energy implantation modes on the doping distribution.

[0056] Step 300: Select the optimal set of ion doping distribution parameters that meets the set conditions from the set of ion doping distribution parameters of all the initial ion implantation conditions.

[0057] The set conditions include an average ion penetration depth of 90 nm to 115 nm and an ion peak concentration greater than or equal to 1 × 10⁻⁶. 15cm⁻³. The optimal ion doping distribution parameter set may include one or more parameters. When the optimal ion doping distribution parameter set may include one or more parameters, the optimal ion doping distribution parameter set can be determined as follows.

[0058] The step of selecting the optimal ion doping distribution parameter set that satisfies the set conditions from the ion doping distribution parameter set of all the initial ion implantation conditions includes: selecting one ion doping distribution parameter set that satisfies the set conditions from the ion doping distribution parameter set of all the initial ion implantation conditions as the optimal ion doping distribution parameter set; or, selecting multiple ion doping distribution parameter sets that satisfy the set conditions from the ion doping distribution parameter set of all the initial ion implantation conditions; and using the ion doping distribution parameter set composed of the average value of the average ion penetration depth and the average value of the ion peak concentration from the multiple ion doping distribution parameter sets as the optimal ion doping distribution parameter set.

[0059] The optimal ion doping distribution parameter set is defined as one set of ion doping parameters that meets the set conditions. The initial ion implantation conditions corresponding to the optimal ion doping distribution parameter set are as follows for the lightly doped drain region of the CNLDD: First, As implantation with an implantation dose of 3e14 and an implantation energy of 2keV; Second, BF2 implantation with an implantation dose of 2e13, an implantation energy of 35keV, and an implantation angle of 25°; Third, B implantation with an implantation dose of 2.5e13, an implantation energy of 20keV, and an implantation angle of 45°. These modes can achieve a threshold voltage window of >6V and a device reliability cycle life of >100k for the memory device.

[0060] When there are multiple sets of ion doping distribution parameters that meet the set conditions, the embodiments of the present invention can use the ion doping distribution parameter set composed of the average value of the average penetration depth of ions and the average value of the peak concentration of ions in the multiple ion doping distribution parameter sets as the optimal ion doping distribution parameter set.

[0061] By repeatedly adjusting the ion implantation parameters in the initial ion implantation conditions and analyzing the simulation results (ion doping distribution parameter set), the most suitable optimal implantation conditions can be found to achieve the goal of optimizing doping and control device performance.

[0062] Step 400: Simulate the overall fabrication process of the memory with the initial ion implantation conditions corresponding to the selected optimal ion doping distribution parameter set using TCAD software.

[0063] In one embodiment, please refer to Figure 2The simulation of the overall fabrication process of the memory using the initial ion implantation conditions corresponding to the optimal ion doping distribution parameter set based on TCAD software includes: simulating the overall fabrication process of the memory using the optimal ion doping distribution parameter set based on the Sprocess module in TCAD software to obtain a first simulation result; simulating the device's electrical performance and / or reliability performance based on the first simulation result using the Sdevice module in TCAD software to obtain a second simulation result. Simulation parameters are obtained based on the second simulation result; the simulation parameters include the device's programming / erasing threshold voltage window and / or the number of reliability cycles.

[0064] This invention, based on the optimal implantation conditions corresponding to the above-mentioned optimal ion doping distribution parameter set, uses TCAD simulation software and sprocess to simulate the overall fabrication process of the device. The overall fabrication process involves the simulation of the substrate, bottom silicon oxide dielectric layer, polysilicon selected gate, first ONO dielectric layer, floating gate, second ONO dielectric layer source, control gate, top oxide layer, erase gate, drain region and drain CNLDD, sidewall spacer, and metal interconnects. Based on the sprocess results, sdevice is used to simulate the electrical performance and reliability of the device, focusing primarily on the read, program, and erase operations. Transient simulation scans the IV curves of the device under different operating states and the IV curve after 100k cycles. Based on the above simulation results, simulation parameters such as the programming and erasing threshold voltage window and the number of cycles for reliability can be obtained.

[0065] The following example illustrates a performance comparison of the memory before and after ion implantation using the optimal implantation conditions corresponding to the optimal ion doping distribution parameter set.

[0066] Figure 3 and Figure 4 This is a schematic diagram of the doping distribution simulated by TCAD in this invention, wherein... Figure 3 This shows the doping distribution of the substrate after vertical angle implantation. Figure 4 This describes the substrate doping distribution using the optimal implantation angle under the best implantation conditions. Figure 3 and Figure 4 Different colors represent the total number of electrically active dopant ions in the semiconductor material, with red to blue indicating that the total number of electrically active dopant ions in the semiconductor material gradually decreases. Figure 3 , Figure 4The x and y axes in the figure represent the spatial distribution of the device, in micrometers. This embodiment of the invention primarily focuses on CNLDD implantation in the drain region, specifically Halo (Pocket) implantation. A relatively large implantation tilt angle is chosen, which allows the dopant to be distributed below the gate oxide electrode. Changes in the implantation tilt angle cause variations in the device threshold voltage and leakage current, reducing the strong electric field in the drain region and decreasing the lateral expansion width between the drain region and the substrate depletion region, thus preventing source-drain crosstalk in short-channel devices.

[0067] Figure 5 This is a schematic diagram of the electrical performance simulated by TCAD software in an embodiment of the present invention. The horizontal axis represents the control gate (cg) terminal voltage in V; the vertical axis represents the bit line (bl) terminal current in A. The red and green curves represent the IV electrical curves of the device under the vertical angle injection condition in the CNLDD process, respectively, under the device erase and programming conditions. The blue and cyan curves represent the IV electrical curves of the device under the tilt angle injection condition in the CNLDD process, respectively, under the optimal injection conditions.

[0068] from Figure 5 As can be seen from the diagram, the LDD (Lightly Doped Drain) structure of this embodiment forms a shallow junction extension region with low doping below the gate boundary and between the drain and source regions. Combined with the heavily doped drain source, this slows down the doping distribution in the drain region, thereby reducing the electric field strength near the drain region. The junction area of ​​the drain-source pn junction facing the channel in these shallow drain-source extension regions is reduced. A slightly farther distance from the channel, a more heavily doped, deeper drain source is connected, forming a gradually changing junction that makes the depletion layer relatively smaller than the channel extension range. LDD improves subthreshold leakage current. The purpose of the second and third tilt implantations is to further reduce the subthreshold current. This is a pocket implantation to increase the impurity ion concentration in the channel and drain regions of the substrate, reducing the lateral extension width of the depletion region between the drain and the substrate (preventing drain-source punch-through). The implantation depth is greater than the LDD depth. This ion implantation tilt angle can be clearly seen from the device electrical simulation results as causing a significant shift in the threshold voltage and a substantial decrease in leakage current (a decrease of two orders of magnitude).

[0069] In summary, the embodiments of the present invention have the technical advantages of efficient and precise control of the CNLDD process (including other ion implantation processes).

[0070] This invention combines SRIM software (which includes implantation energy, masking layer type, implantation dose, number of implantations, and implantation angle conditions) and TCAD software (which includes Sprocess and Sdevice software components) for ion implantation simulation. It is mainly aimed at the CNLDD implantation process for the device drain in the process flow, and selects the optimal implantation conditions among different initial ion implantation conditions to achieve the best memory operating electrical performance and reliability.

[0071] In other words, the embodiments of the present invention combine SRIM software and TCAD software for ion implantation simulation, mainly targeting the CNLDD implantation process of the device drain in the process flow. Among multiple initial ion implantation conditions, the initial ion implantation conditions corresponding to the optimal ion doping distribution parameter set are selected as the best implantation conditions to achieve precise control of ion implantation mode to achieve high performance of memory devices.

[0072] Device Examples

[0073] Please refer to Figure 6 On the other hand, embodiments of the present invention also provide a memory device performance regulation device, comprising:

[0074] The acquisition module 601 is used to acquire multiple initial ion implantation conditions of the ion implantation process of the memory drain.

[0075] The first simulation module 602 is used to perform ion implantation simulation on all the initial ion implantation conditions using SRIM software to obtain the ion doping distribution parameter set corresponding to each initial ion implantation condition; the ion doping distribution parameter set includes the average penetration depth of ions and the peak concentration of ions.

[0076] The screening module 603 is used to screen out the optimal set of ion doping distribution parameters that meet the set conditions from the set of ion doping distribution parameters of all the initial ion implantation conditions.

[0077] The second simulation module 604 is used to simulate the overall fabrication process of the memory based on the TCAD software, using the initial ion implantation conditions corresponding to the selected optimal ion doping distribution parameter set.

[0078] Optionally, the step of selecting the optimal ion doping distribution parameter set that satisfies the set conditions from the set of ion doping distribution parameters of all the initial ion implantation conditions includes:

[0079] From the set of ion doping distribution parameters for all the initial ion implantation conditions, select a set of ion doping distribution parameters that meets the set conditions as the optimal set of ion doping distribution parameters; or...

[0080] Multiple sets of ion doping distribution parameters that meet the set conditions are selected from the set of ion doping distribution parameters of all the initial ion implantation conditions; the set of ion doping distribution parameters composed of the average value of the average penetration depth of ions and the average value of the peak concentration of ions in the multiple sets of ion doping distribution parameters is the optimal set of ion doping distribution parameters.

[0081] Optionally, the set conditions include an average ion penetration depth of 90 nm to 115 nm and an ion peak concentration greater than or equal to 1 × 10¹⁵ cm⁻³.

[0082] Optionally, the simulation of the overall fabrication process of the memory using TCAD software with initial ion implantation conditions corresponding to the optimal ion doping distribution parameter set includes:

[0083] The overall fabrication process of the memory using the selected optimal ion doping distribution parameter set was simulated using the Sprocess module in TCAD software, and the first simulation result was obtained.

[0084] Based on the Sdevice module in TCAD software, the first simulation results are used to perform device electrical performance simulation and / or reliability performance simulation to obtain the second simulation results.

[0085] Simulation parameters are obtained based on the second simulation results; the simulation parameters include the device's programming erase threshold voltage window and / or the number of cycles for reliability.

[0086] Optionally, the initial ion implantation conditions include at least two of the following: implantation energy, masking layer type, implantation dose, masking layer thickness, number of implantations, and implantation angle.

[0087] The memory device performance control device includes a processor and a memory. The aforementioned acquisition module 601, first simulation module 602, screening module 603, and second simulation module 604 are all stored in the memory as program units. The processor executes the aforementioned program units stored in the memory to realize the corresponding functions.

[0088] A processor contains a kernel, which retrieves the corresponding program units from memory. One or more kernels can be configured.

[0089] The memory may include non-permanent memory in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM, and the memory includes at least one memory chip.

[0090] Figure 7 An example is a schematic diagram of the physical structure of an electronic device, such as... Figure 7As shown, the electronic device may include: a processor 710, a communication interface 720, a memory 730, and a communication bus 740, wherein the processor 710, the communication interface 720, and the memory 730 communicate with each other through the communication bus 740. The processor 710 can call logic instructions in the memory 730 to execute a memory device performance regulation method, which includes: obtaining multiple initial ion implantation conditions for the ion implantation process of the memory drain; performing ion implantation simulation on all the initial ion implantation conditions using SRIM software to obtain an ion doping distribution parameter set corresponding to each initial ion implantation condition; the ion doping distribution parameter set includes the average ion penetration depth and the peak ion concentration; selecting the optimal ion doping distribution parameter set that meets the set conditions from the ion doping distribution parameter set of all the initial ion implantation conditions; and performing overall fabrication process simulation on the memory with the initial ion implantation conditions corresponding to the optimal ion doping distribution parameter set using TCAD software.

[0091] Furthermore, the logical instructions in the aforementioned memory 730 can be implemented as software functional units and, when sold or used as independent products, can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, essentially, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0092] On the other hand, the present invention also provides a computer program product, which includes a computer program that can be stored on a machine-readable storage medium. When the computer program is executed by a processor, the computer can execute a memory device performance regulation method. The method includes: obtaining multiple initial ion implantation conditions for the ion implantation process of the memory drain; performing ion implantation simulation on all the initial ion implantation conditions using SRIM software to obtain a set of ion doping distribution parameters corresponding to each initial ion implantation condition; the set of ion doping distribution parameters includes the average penetration depth of ions and the peak concentration of ions; selecting the optimal set of ion doping distribution parameters that meets the set conditions from the set of ion doping distribution parameters of all the initial ion implantation conditions; and performing overall fabrication process simulation on the memory with the initial ion implantation conditions corresponding to the optimal set of ion doping distribution parameters using TCAD software.

[0093] In another aspect, the present invention also provides a machine-readable storage medium storing a computer program thereon, which, when executed by a processor, implements a method for regulating the performance of a memory device. This method includes: acquiring multiple initial ion implantation conditions for the ion implantation process of the memory drain; performing ion implantation simulation on all the initial ion implantation conditions using SRIM software to obtain a set of ion doping distribution parameters corresponding to each initial ion implantation condition; the ion doping distribution parameter set including the average ion penetration depth and the peak ion concentration; selecting the optimal ion doping distribution parameter set that satisfies set-specific conditions from the set of ion doping distribution parameters for all the initial ion implantation conditions; and performing an overall fabrication process simulation on the memory using the initial ion implantation conditions corresponding to the optimal ion doping distribution parameter set based on TCAD software.

[0094] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0095] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0096] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for regulating performance of a memory device, the method comprising: The method comprises the following steps: obtaining a plurality of initial ion implantation conditions of an ion implantation process of a memory drain; performing ion implantation simulation on all the initial ion implantation conditions by using SRIM software to obtain an ion doping distribution parameter set corresponding to each initial ion implantation condition; the ion doping distribution parameter set comprises an ion average penetration depth and an ion peak concentration; selecting an optimal ion doping distribution parameter set meeting a set condition from the ion doping distribution parameter sets of all the initial ion implantation conditions; performing overall preparation process flow simulation on the memory of the initial ion implantation condition corresponding to the optimal ion doping distribution parameter set by using TCAD software. The ion implantation process of the drain is a CNLDD implantation process for a device drain. The step of selecting the optimal ion doping distribution parameter set meeting the set condition from the ion doping distribution parameter sets of all the initial ion implantation conditions comprises: selecting one ion doping distribution parameter set meeting the set condition from the ion doping distribution parameter sets of all the initial ion implantation conditions as the optimal ion doping distribution parameter set; or selecting a plurality of ion doping distribution parameter sets meeting the set condition from the ion doping distribution parameter sets of all the initial ion implantation conditions; and selecting an ion doping distribution parameter set composed of an average value of the ion average penetration depths and an average value of the ion peak concentrations in the plurality of ion doping distribution parameter sets as the optimal ion doping distribution parameter set. By repeatedly adjusting ion implantation parameters in the initial ion implantation conditions and analyzing the ion doping distribution parameter sets, the most suitable optimal implantation condition is found to achieve the goal of optimizing doping and controlling device performance. The SRIM software can calculate and simulate every detail in the collision process between the implanted ions and the target material atoms under different initial ion implantation conditions and can give a simulation image of the final stopping range of the implanted ions; the ion average penetration depth and the ion peak concentration regularity under different modes are summarized by this method; the ion average penetration depth and the ion peak concentration are important parameters for describing ion distribution; by these values, the depth and concentration distribution of the doping layer can be estimated.

2. The method of claim 1, wherein, The set conditions include an ion average penetration depth of 90 nm to 115 nm, and an ion peak concentration greater than or equal to 1 x 10 15 cm - ³.

3. The method of claim 1, wherein the performance of the memory device is regulated by: The step of performing overall preparation process flow simulation on the memory of the initial ion implantation condition corresponding to the optimal ion doping distribution parameter set by using the TCAD software comprises: performing overall preparation process flow simulation on the memory of the initial ion implantation condition corresponding to the optimal ion doping distribution parameter set by using the Sprocess module in the TCAD software to obtain a first simulation result; performing device electrical performance simulation and / or reliability performance simulation on the first simulation result by using the Sdevice module in the TCAD software to obtain a second simulation result; obtaining simulation parameters based on the second simulation result; the simulation parameters comprise a programming and erasing threshold voltage window of the device and / or a cycle number of reliability.

4. The method of claim 1, wherein the memory device performance regulation is performed by a memory controller. The initial ion implantation condition comprises at least two of the following: implantation energy, mask layer type, implantation dose, mask layer thickness, implantation times, and implantation angle.

5. A memory device performance regulation apparatus, comprising: The method comprises the following steps: obtaining a plurality of initial ion implantation conditions of an ion implantation process of a memory drain; The first simulation module is configured to perform ion implantation simulation on all the initial ion implantation conditions by using SRIM software to obtain an ion doping distribution parameter set corresponding to each initial ion implantation condition; the ion doping distribution parameter set includes an ion average penetration depth and an ion peak concentration; The screening module is configured to screen an optimal ion doping distribution parameter set meeting a set condition from the ion doping distribution parameter sets of all the initial ion implantation conditions; The second simulation module is configured to perform overall preparation process flow simulation on a memory using the initial ion implantation condition corresponding to the optimal ion doping distribution parameter set by using TCAD software. The ion implantation process of the drain is a CNLDD implantation process for a device drain. The screening of the optimal ion doping distribution parameter set meeting the set condition from the ion doping distribution parameter sets of all the initial ion implantation conditions includes: screening one ion doping distribution parameter set meeting the set condition from the ion doping distribution parameter sets of all the initial ion implantation conditions as the optimal ion doping distribution parameter set; or screening multiple ion doping distribution parameter sets meeting the set condition from the ion doping distribution parameter sets of all the initial ion implantation conditions; and taking an ion doping distribution parameter set composed of an average value of ion average penetration depths and an average value of ion peak concentrations in the multiple ion doping distribution parameter sets as the optimal ion doping distribution parameter set. By repeatedly adjusting ion implantation parameters in the initial ion implantation conditions and analyzing the ion doping distribution parameter sets, the most suitable optimal implantation condition can be found to achieve the goal of optimizing doping and controlling device performance. The SRIM software can calculate and simulate every detail in the collision process between the implanted ions and the target material atoms under different initial ion implantation conditions and can give a simulation image of the final stopping range of the implanted ions; the ion average penetration depth and the ion peak concentration regularity under different modes are summarized through this method; the ion average penetration depth and the ion peak concentration are important parameters for describing ion distribution; through these values, the depth and concentration distribution of the doping layer can be estimated.

6. The memory device performance regulation apparatus of claim 5, wherein, The set conditions include an ion average penetration depth of 90 nm to 115 nm, and an ion peak concentration greater than or equal to 1 x 10 15 cm - ³.

7. The memory device performance regulation apparatus of claim 5, wherein, The overall preparation process flow simulation on the memory using the initial ion implantation condition corresponding to the optimal ion doping distribution parameter set by using the TCAD software includes: performing overall preparation process flow simulation on the memory using the optimal ion doping distribution parameter set by using an Sprocess module in the TCAD software to obtain a first simulation result; performing device electrical performance simulation and / or reliability performance simulation on the first simulation result by using an Sdevice module in the TCAD software to obtain a second simulation result; obtaining simulation parameters based on the second simulation result; the simulation parameters include a programming and erasing threshold voltage window of the device and / or a cycle number of reliability.

8. The memory device performance regulation apparatus of claim 5, wherein, The initial ion implantation condition includes at least two of an implantation energy, a mask layer type, an implantation dose, a mask layer thickness, an implantation number, and an implantation angle.

9. An electronic device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, The processor implements the memory device performance regulation method in any one of claims 1 to 4 when executing the program.

10. A machine-readable storage medium having stored thereon a computer program, characterized in that The computer program is executed by a processor to implement the memory device performance regulation method in any one of claims 1 to 4.

11. A computer program product comprising a computer program, characterized in that, The computer program is executed by a processor to implement the memory device performance regulation method in any one of claims 1 to 4.

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