SiC epitaxial split detection method and system

Abstract

The present application relates to the technical field of semiconductor, in particular to a SiC epitaxial splitting detection method and system, the present application successfully takes out the combined wafer, graphite ring and graphite disc from the epitaxial growth environment, the edge finding and correction of the graphite disc and the graphite ring are respectively completed independently through the correction platform and the combined splitting module, a large amount of reference calibration time between the mechanical hand, the edge finder, the correction platform and the combined splitting module is saved, the equipment calculation complexity is reduced, and the wafer positioning efficiency is effectively improved; then the graphite disc and the graphite ring are combined, cleaned and stored, which is beneficial to the normal use in subsequent processing; through the laser sensor, whether the wafer successfully separates from the graphite ring is automatically detected, the wafer positioning error caused by manual operation is reduced, the accuracy and efficiency of wafer processing are ensured, and the automation level and product quality of wafer processing are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a SiC epitaxial splitting detection method and system. Background Art

[0002] Typically, a semiconductor device manufacturing process is performed by repeatedly performing multiple unit processes on a wafer, such as an exposure process, an etching process, a diffusion process, a deposition process, and a metal process. Wafers loaded on a carrier within the facility are introduced or taken out by a wafer transfer device.

[0003] The wafer transfer system is equipped with a robotic arm that supports the wafer at the front end of its arm. The wafer is transported while supported by the robotic arm. During transport, the wafer is supported by a carrier, facilitating smooth loading of the wafer into the epitaxial growth equipment. However, traditional inspection methods are no longer able to meet the production needs of wafer manufacturers. These methods not only increase labor costs for manufacturers, but also reduce production efficiency and processing quality due to operator error. Summary of the Invention

[0004] In response to the deficiencies in the prior art, the present invention provides a SiC epitaxial splitting detection method and system, which independently completes edge finding and deviation correction of the graphite disk and the graphite ring through a deviation correction platform and a merging and splitting module, saving the reference calibration time between the manipulator, edge finder, deviation correction platform and merging and splitting module, reducing the calculation complexity of the equipment, automatically detecting whether the wafer has been successfully separated from the graphite ring, reducing wafer positioning errors caused by human factors, thereby ensuring the accuracy and efficiency of wafer processing, and improving the automation level of wafer processing and product quality.

[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0006] A SiC epitaxial splitting detection method comprises the following steps:

[0007] S01. A merging and splitting module and a robot are provided. The robot is used to take out the merged wafer, graphite ring and graphite disk from the epitaxial growth environment and place them into the merging and splitting module;

[0008] S02, a correction platform is provided, and the correction platform is provided with a third positioning reference. A merging and splitting module is used to separate the graphite disk and the graphite ring. A manipulator is used to place the graphite disk on the correction platform for edge finding and correction, so that the graphite disk determines its own position and angle according to the third positioning reference;

[0009] S03, a laser sensor is provided, and a merging and splitting module is used to separate the graphite ring and the wafer, and the wafer is moved away from the graphite ring, and a laser sensor is used to detect whether the wafer is separated from the graphite ring;

[0010] S04, the merging and splitting module is provided with a second positioning reference, and the merging and splitting module finds the edge of the graphite ring and corrects the deviation according to the second positioning reference, so that the graphite ring determines its own position and angle according to the second positioning reference;

[0011] S05, the graphite disc is placed into the merging and splitting module by the mechanical hand, and the graphite disc is merged with the graphite ring by the merging and splitting module, so that the position and angle information of the graphite disc and the graphite ring are consistent;

[0012] S06, provided with a cleaning mechanism and a disc ring placing box, the merged graphite disc and graphite ring are placed into the cleaning mechanism by the mechanical hand for cleaning and dust removal, the cleaned and dust-removed merged graphite disc and graphite ring are taken out from the cleaning mechanism by the mechanical hand, and the merged graphite disc and graphite ring are placed into the disc ring placing box.

[0013] The merging and splitting module includes a base frame, a plurality of ring holders connected to the top end of the base frame, a tray and a jacking mechanism, the ring holders are distributed circumferentially on the base frame, the jacking mechanism is drivingly connected with the tray, the base frame has a movable opening penetrating therethrough, the output end of the jacking mechanism is arranged in the movable opening, and the jacking mechanism drives the tray to move up and down, so that the tray moves up and down inside the ring holder.

[0014] In step S01, when the mechanical hand takes out the merged wafer, graphite ring and graphite disc from the epitaxial growth environment, the jacking mechanism drives the tray to move upward to the required height, and the mechanical hand places the merged wafer, graphite ring and graphite disc on the tray, so that the ring holder and the tray support the graphite ring and the graphite disc respectively.

[0015] The deviation correction platform includes a deviation correction table, a deviation correction driving mechanism drivingly connected with the deviation correction table, a deviation correction ring light source and a deviation correction collector, the deviation correction driving mechanism is used to drive the deviation correction table to move along the X-axis and the Y-axis, and make the deviation correction table rotate, the deviation correction ring light source is located between the deviation correction table and the deviation correction collector, the deviation correction collector corresponds to the deviation correction ring light source, the third positioning reference is arranged on the deviation correction collector, and the deviation correction collector is electrically connected with the deviation correction driving mechanism.

[0016] When the edge of the graphite disc is found, the mechanical hand places the graphite disc on the deviation correction table, the graphite disc is supported by the deviation correction table, the deviation correction ring light source supplements light for the graphite disc, the deviation correction collector determines the position and angle of the graphite disc by visual shooting, and the deviation correction driving mechanism drives the deviation correction table to move along the X-axis and / or the Y-axis according to the data obtained by the deviation correction collector, and makes the deviation correction table rotate, so that the graphite disc determines its own position and angle according to the third positioning reference, thereby completing the accurate positioning of the graphite disc.

[0017] The merging and splitting module further comprises a disassembly and assembly driving mechanism, a disassembly and assembly ring light source, a surface light source and a collection device in the step S04. The disassembly and assembly driving mechanism is used to drive the chassis to move along the X axis and the Y axis and to rotate the chassis. The disassembly and assembly ring light source is located between the chassis and the surface light source. The front end of the collection device passes through the surface light source and corresponds to the disassembly and assembly ring light source. The collection device is electrically connected with the disassembly and assembly driving mechanism. The second positioning reference is arranged on the collection device.

[0018] When the graphite ring is edge finding and deviation correcting, the graphite ring is supported by the ring bracket. The surface light source and the disassembly and assembly ring light source provide light compensation for the graphite ring and the collection device. The collection device visually takes a picture to determine the position and angle of the graphite ring. The disassembly and assembly driving mechanism drives the chassis to move along the X axis and / or the Y axis and rotates the chassis according to the data obtained by the collection device, so that the graphite ring determines its own position and angle according to the second positioning reference, thereby completing the accurate positioning of the graphite ring.

[0019] In the step S03, a storage box and an edge finder are arranged. The edge finder is provided with a first positioning reference, so that the wafer determines its own position and angle according to the first positioning reference.

[0020] When it is necessary to store the wafer, the graphite ring is edge finding and deviation correcting, so that the graphite ring determines its own position and angle according to the second positioning reference. The jacking mechanism drives the tray to move upwards, so that the tray supports and drives the wafer to move away from the ring bracket. The laser sensor is used to detect the distances from the wafer and the graphite ring respectively, so as to determine whether the wafer is successfully separated from the graphite ring. When the wafer is not separated from the graphite ring, the robot grabs the wafer and the graphite ring to move out of the merging and splitting module. When the wafer is determined to be separated from the graphite ring, the robot puts the wafer into the edge finder to find the edge, so that the wafer determines its own position and angle according to the first positioning reference. Then, the robot puts the wafer after the edge finding into the storage box.

[0021] The deviation correcting driving mechanism comprises a deviation correcting X axis module, a deviation correcting Y axis module drivingly connected with the deviation correcting X axis module and a deviation correcting rotation unit drivingly connected with the deviation correcting Y axis module. The deviation correcting X axis module drives the deviation correcting Y axis module to move along the X axis. The deviation correcting Y axis module drives the deviation correcting rotation unit to move along the Y axis. The deviation correcting rotation unit is drivingly connected with the deviation correcting table. The deviation correcting rotation unit is used to drive the deviation correcting table to rotate.

[0022] The disassembly and assembly driving mechanism comprises a disassembly and assembly X-axis module, a disassembly and assembly Y-axis module in driving connection with the disassembly and assembly X-axis module and a disassembly and assembly rotating unit in driving connection with the disassembly and assembly Y-axis module, the disassembly and assembly X-axis module drives the disassembly and assembly Y-axis module to move along the X-axis, the disassembly and assembly Y-axis module drives the disassembly and assembly rotating unit to move along the Y-axis, the disassembly and assembly rotating unit is in driving connection with the base frame, the disassembly and assembly rotating unit is used for driving the base frame to rotate, the disassembly and assembly rotating unit is provided with a protective cover, the protective cover is provided with an installation opening penetrating therethrough, and the jacking mechanism is arranged in the installation opening.

[0023] The ring support is provided with a ring support opening, and the bottom outer edge of the graphite ring extends into the ring support opening when the ring support supports the graphite ring.

[0024] The bottom end of the graphite ring is provided with an annular disc accommodating groove, the top end outer edge of the graphite disc extends into the disc accommodating groove when the graphite disc is combined with the graphite ring, the top end of the graphite ring is provided with an annular sheet accommodating groove, and the bottom end outer edge of the wafer extends into the sheet accommodating groove when the wafer is combined with the graphite ring.

[0025] The application further provides a SiC epitaxial splitting detection system, comprising a laser sensor, a collection device and a deviation correction collector.

[0026] The laser sensor is used for detecting whether the wafer is separated from the graphite ring.

[0027] The deviation correction collector is used for determining the position and angle of the graphite disc through visual shooting, and determining the position and angle of the graphite disc through a third positioning reference.

[0028] The collection device is used for determining the position and angle of the graphite ring through visual shooting, and determining the position and angle of the graphite ring through a second positioning reference.

[0029] The application has the following beneficial effects:

[0030] The application successfully takes out the combined wafer, graphite ring and graphite disc from the epitaxial growth environment, independently completes the edge finding and deviation correction of the graphite disc and the graphite ring through the deviation correction platform and the combination and splitting module, saves a lot of time for reference calibration between the mechanical hand, the edge finder, the deviation correction platform and the combination and splitting module, reduces the equipment calculation complexity, effectively improves the wafer positioning efficiency, combines, cleans and stores the graphite disc and the graphite ring, is beneficial to the normal use in subsequent processing, automatically detects whether the wafer is successfully separated from the graphite ring through the laser sensor, reduces the wafer positioning error caused by manual operation, ensures the accuracy and efficiency of wafer processing, and improves the automation level and product quality of wafer processing. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1 It is a perspective view of the structure in the SiC epitaxial splitting detection method and system.

[0032] Figure 2 The structure diagram of the graphite ring and the graphite disc when they are combined.

[0033] Figure 3 The exploded structure diagram of the wafer, the graphite ring and the graphite disc.

[0034] Figure 4 The perspective view of the graphite ring, the graphite disc and the combination and separation module.

[0035] Figure 5 The schematic diagram of the position relationship of the tray, the graphite ring and the ring holder before the wafer and the graphite ring are separated.

[0036] Figure 6 The exploded structure diagram of the laser sensor, the chassis, the ring holder and the tray.

[0037] Figure 7 The perspective structure diagram of the cleaning mechanism and the mechanical arm.

[0038] Figure 8 The perspective structure diagram of the deviation rectification platform Figure 1 .

[0039] Figure 9 The perspective structure diagram of the combination and separation module.

[0040] Figure 10 The exploded structure diagram of the deviation rectification driving mechanism, the deviation rectification platform and the graphite disc.

[0041] Figure 11 The exploded diagram of the combination and separation driving mechanism, the jacking mechanism, the chassis and the tray.

[0042] Figure 12 The structure diagram of the graphite ring and the ring holder when they are separated.

[0043] Figure 13 The local structure diagram of the graphite ring and the graphite disc when they are separated.

[0044] Figure 14 The perspective view of the wafer and the graphite ring when they are separated.

[0045] 01, wafer; 02, graphite ring;

[0046] 021, disc accommodating groove; 022, sheet accommodating groove; 03, graphite disc;

[0047] 1, combination and separation module; 100, laser sensor;

[0048] 11, chassis; 111, movable port; 12, ring holder; 121, ring accommodating port;

[0049] 13, tray; 14, jacking mechanism; 15, disassembly and assembly driving mechanism;

[0050] 151, disassembly and assembly X-axis module; 152, disassembly and assembly Y-axis module; 153, disassembly and assembly rotating unit;

[0051] 1531, shroud; 1532, mounting port;

[0052] 16, disassembly and assembly ring light source; 17, surface light source; 18, acquisition device;

[0053] 2, storage box; 3, mechanical hand; 4, edge finder;

[0054] 5, cleaning mechanism; 6, disc ring placement box;

[0055] 7, deviation rectification platform;

[0056] 71, deviation rectification table; 72, deviation rectification driving mechanism;

[0057] 721, deviation rectification X-axis module; 722, deviation rectification Y-axis module; 723, deviation rectification rotating unit;

[0058] 73, deviation rectification ring light source; 74, deviation rectification acquisition device. DETAILED DESCRIPTION

[0059] In order to facilitate the understanding of those skilled in the art, the present application will be further described below in conjunction with the embodiments and the accompanying drawings. The specific embodiments of the present application will be described below. It should be noted that, in the specific description of these embodiments, the present specification cannot describe all the features of the actual embodiments in detail for the sake of brevity and conciseness.

[0060] Reference Figures 1 to 14 As shown in the figure, a SiC epitaxial splitting detection method comprises the following steps:

[0061] S01, provided with a merging and splitting module 1 and a mechanical hand 3, the mechanical hand 3 is used to take out the merged wafer 01, graphite ring 02 and graphite disc 03 from the epitaxial growth environment, and put them into the merging and splitting module 1;

[0062] S02, provided with a deviation rectification platform 7, the deviation rectification platform 7 is provided with a third positioning reference, the merging and splitting module 1 is used to separate the graphite disc 03 from the graphite ring 02, and the mechanical hand 3 is used to put the graphite disc 03 into the deviation rectification platform for edge finding and deviation rectification, so as to determine the position and angle of the graphite disc 03 according to the third positioning reference;

[0063] S03, the laser sensor 100 is arranged, the graphite ring 02 is separated from the wafer 01 by using the combination and separation module 1, and the wafer 01 is moved away from the graphite ring 02, and the laser sensor 100 is used to detect whether the wafer 01 is separated from the graphite ring 02;

[0064] S04, the combination and separation module 1 is provided with a second positioning reference, the combination and separation module 1 is used to find the edge of the graphite ring 02 and correct the deviation according to the second positioning reference, so that the graphite ring 02 determines its position and angle according to the second positioning reference;

[0065] S05, the graphite disc 03 is placed into the combination and separation module 1 by using the manipulator 3, and the graphite disc 03 is combined with the graphite ring 02 by using the combination and separation module 1, so that the center position and angle information of the graphite disc 03 and the graphite ring 02 are consistent;

[0066] S06, the cleaning mechanism 5 and the disc ring placing box 6 are arranged, the combined graphite disc 03 and the graphite ring 02 are placed into the cleaning mechanism 5 by using the manipulator 3 to clean and remove dust, the combined graphite disc 03 and the graphite ring 02 cleaned and removed dust are taken away from the cleaning mechanism 5 by using the manipulator 3, and the combined graphite disc 03 and the graphite ring 02 are placed into the disc ring placing box 6.

[0067] Reference Figures 1 to 3 As shown, the manipulator 3 is a four-axis robot in actual application, the manipulator 3 is provided with a suction arm, the manipulator 3 is used to grab or place the wafer 01, the graphite ring 02 or the graphite disc 03, the edge finder 4 is used to find the edge of the wafer 01 and correct the deviation, so as to adjust the position and angle of the wafer 01; when the wafer 01, the graphite ring 02 and the graphite disc 03 are combined, the manipulator 3 grabs or places the graphite disc 03 to realize the overall transfer of the wafer 01, the graphite ring 02 and the graphite disc 03; when the wafer 01 is combined with the graphite ring 02, the manipulator 3 grabs or places the graphite ring 02 to realize the overall transfer of the wafer 01 and the graphite ring 02; when the graphite ring 02 is combined with the graphite disc 03, the manipulator 3 grabs or places the graphite disc 03 to realize the overall transfer of the graphite ring 02 and the graphite disc 03, automatically grabs or places the wafer 01, the graphite ring 02 or the graphite disc 03, saves labor, and improves processing efficiency.

[0068] The combined wafer 01, graphite ring 02 and graphite disc 03 are smoothly taken out from the epitaxial growth environment. Specifically, the third positioning reference is determined in the debugging process of the deviation rectification platform 7. After the deviation rectification platform 7 completes the edge searching and deviation rectification of the graphite disc 03, the edge searching of the graphite disc 03 is completed. The deviation rectification platform 7 does not transmit the position and angle information of the graphite disc 03 to the edge finder 4, the merging and splitting module 7 or the mechanical hand 3. The mechanical hand 3 can complete the transfer of the graphite disc 03 by using fixed grabbing or placing actions. The second positioning reference is determined in the debugging process of the merging and splitting module 1. After the merging and splitting module 1 completes the edge searching and deviation rectification of the graphite ring 02, the edge searching of the graphite ring 02 is completed. The merging and splitting module 1 does not transmit the position and angle information of the graphite ring 02 to the edge finder 4, the deviation rectification platform 7 or the mechanical hand 3. The mechanical hand 3 can complete the transfer of the graphite ring 02 by using fixed grabbing or placing actions. The deviation rectification platform 7 and the merging and splitting module 1 can independently complete the edge searching and deviation rectification of the graphite disc 03 and the graphite ring 02. A large amount of time for reference calibration between the mechanical hand 3, the edge finder 4, the deviation rectification platform 7 and the merging and splitting module 1 is saved. The device calculation complexity is reduced. The wafer 01 positioning efficiency is effectively improved. Then, the graphite disc 03 and the graphite ring 02 are merged, cleaned and stored, which is beneficial to normal use in subsequent processing. The laser sensor 100 is arranged to automatically detect whether the wafer 01 is smoothly separated from the graphite ring 02. The wafer 01 positioning error caused by manual operation is reduced. The wafer 01 processing accuracy and efficiency are ensured. The wafer 01 processing automation level and product quality are improved.

[0069] Reference Figure 4 In the embodiment, the merging and splitting module 1 includes a base frame 11, a plurality of ring holders 12 connected to the top end of the base frame 11, a tray 13 and a jacking mechanism 14. The ring holders 12 are distributed in the circumferential direction of the base frame 11. The jacking mechanism 14 is drivingly connected with the tray 13. The base frame 11 is penetrated by an active port 111 from top to bottom. The output end of the jacking mechanism 14 is arranged in the active port 111. The jacking mechanism 14 drives the tray 13 to move up and down, so that the tray 13 moves up and down inside the ring holder 12. In step S01, when the mechanical hand 3 takes out the combined wafer 01, graphite ring 02 and graphite disc 03 from the epitaxial growth environment, the jacking mechanism 14 drives the tray 13 to move upward to the required height. The mechanical hand 3 places the combined wafer 01, graphite ring 02 and graphite disc 03 on the tray 13, so that the ring holder 12 and the tray 13 support the graphite ring 02 and the graphite disc 03 respectively, thereby smoothly taking out the combined wafer 01, graphite ring 02 and graphite disc 03. The jacking mechanism 14 drives the tray 13 to move, which facilitates the quick splitting of the graphite ring 02 and the graphite disc 03 and improves the splitting efficiency.

[0070] Reference Figure 8 , 10As shown, in the embodiment, the deviation rectifying platform 7 comprises a deviation rectifying table 71, a deviation rectifying driving mechanism 72 drivingly connected with the deviation rectifying table 71, a deviation rectifying ring light source 73, and a deviation rectifying collector 74. The deviation rectifying driving mechanism 72 is configured to drive the deviation rectifying table 71 to move along the X-axis and the Y-axis and to rotate the deviation rectifying table 71. The deviation rectifying ring light source 73 is located between the deviation rectifying table 71 and the deviation rectifying collector 74. The deviation rectifying collector 74 corresponds to the deviation rectifying ring light source 73. The third positioning reference is arranged on the deviation rectifying collector 74. The deviation rectifying collector 74 is electrically connected with the deviation rectifying driving mechanism 72.

[0071] Reference is made to Figure 8 As shown, in actual application, when the graphite disc 03 is edge finding, the robot 3 places the graphite disc 03 on the deviation rectifying table 71, and the graphite disc 03 is supported by the deviation rectifying table 71. The deviation rectifying ring light source 73 provides light for the graphite disc 03. The deviation rectifying collector 74 takes a visual photo to determine the position and angle of the graphite disc 03. Reference is made to Figure 10 As shown, the deviation rectifying driving mechanism 72 drives the deviation rectifying table 71 to move along the X-axis and / or the Y-axis according to the data obtained by the deviation rectifying collector 74, and rotates the deviation rectifying table 71, so that the graphite disc 03 determines its own position and angle according to the third positioning reference, thereby completing accurate positioning of the graphite disc 03. Specifically, the third positioning reference has been determined in the debugging process of the deviation rectifying platform 7. Therefore, after the deviation rectifying platform 7 completes edge finding and deviation rectification of the graphite disc 03, the edge finding and deviation rectification of the graphite disc 03 is completed, and the deviation rectifying platform 7 does not transmit the position and angle information of the graphite disc 03 to the edge finder 4, the merging and splitting module 7, or the robot 3. The deviation rectifying platform 7 can independently complete edge finding and deviation rectification of the graphite disc 03. The robot 3 can complete transfer of the graphite disc 03 by using fixed grabbing or placing actions, thereby saving a lot of time for reference calibration between the robot 3, the edge finder 4, the deviation rectifying platform 7, and the merging and splitting module 1, reducing the computational complexity of the equipment, and effectively improving the positioning efficiency of the wafer 01.

[0072] Reference is made to Figure 9 As shown, in the embodiment, in step S04, the merging and splitting module 1 further comprises a splitting and merging driving mechanism 15, a splitting and merging ring light source 16, a surface light source 17, and an acquisition device 18. The splitting and merging driving mechanism 15 is configured to drive the chassis 11 to move along the X-axis and the Y-axis and to rotate the chassis 11. The splitting and merging ring light source 16 is located between the chassis 11 and the surface light source 17. The front end of the acquisition device 18 penetrates through the surface light source 17 and corresponds to the splitting and merging ring light source 16. The acquisition device 18 is electrically connected with the splitting and merging driving mechanism 15. The second positioning reference is arranged on the acquisition device 18.

[0073] Reference is made to Figure 9As shown, in actual application, when the edge searching and deviation correction of the graphite ring 02 is performed, the graphite ring 02 is supported by the ring bracket 12, the surface light source 17 and the split and combined ring light source 16 provide light compensation for the graphite ring 02 and the acquisition device 18, the acquisition device 18 visually photographs to determine the position and angle of the graphite ring 02, the split and combined driving mechanism 15 drives the base frame 11 to move along the X-axis and / or the Y-axis according to the data obtained by the acquisition device 18, and the base frame 11 rotates to make the graphite ring 02 determine its own position and angle according to the second positioning reference, so as to complete the accurate positioning of the graphite ring 02; specifically, the second positioning reference has been determined in the debugging process of the split and combined module 1, therefore, after the split and combined module 1 completes the edge searching and deviation correction of the graphite ring 02, the edge searching of the graphite ring 02 is completed, and the split and combined module 1 does not transmit the position and angle information of the graphite ring 02 to the edge searcher 4, the deviation correction platform 7 or the mechanical hand 3, so that the split and combined module 1 can independently complete the edge searching and deviation correction of the graphite ring 02, the mechanical hand 3 can complete the transfer of the graphite ring 02 by using fixed grabbing or placing actions, a large amount of reference calibration time between the mechanical hand 3, the edge searcher 4, the deviation correction platform 7 and the split and combined module 1 is saved, the equipment calculation complexity is reduced, and the wafer 01 positioning efficiency is effectively improved.

[0074] Reference Figure 1 As shown, in the present embodiment, in step S03, the storage box 2 and the edge searcher 4 are provided, the edge searcher 4 is provided with a first positioning reference, so that the wafer 01 determines its own position and angle according to the first positioning reference; specifically, the first positioning reference has been determined in the debugging process of the edge searcher 4, after the edge searcher 4 completes the edge searching and deviation correction of the wafer 01, the edge searching and deviation correction of the wafer 01 is completed, and the edge searcher 4 does not transmit the position and angle information of the wafer 01 to the split and combined module 1, the deviation correction platform 7 or the mechanical hand 3, so that the edge searcher 4 can independently complete the edge searching and deviation correction of the wafer 01, the mechanical hand 3 can complete the transfer of the wafer 01 by using fixed grabbing or placing actions, a large amount of reference calibration time between the mechanical hand 3, the edge searcher 4, the deviation correction platform 7 and the split and combined module 1 is saved, the equipment calculation complexity is reduced, and the wafer 01 positioning efficiency is effectively improved.

[0075] Reference Figure 6As shown, when the wafer 01 needs to be stored, the graphite ring 02 is edge finding and corrected, so that the graphite ring 02 determines its position and angle according to the second positioning reference, the lifting mechanism 14 drives the tray 13 to move upwards, so that the tray 13 supports and drives the wafer 01 to move away from the ring carrier 12, the laser sensor 100 is used to detect the distance from the wafer 01 and the graphite ring 02 respectively, to determine whether the wafer 01 is successfully separated from the graphite ring 02, when the wafer 01 is not separated from the graphite ring 02, the manipulator 3 grabs the wafer 01 and the graphite ring 02 to move out of the merging and splitting module, when the wafer 01 is determined to be separated from the graphite ring 02, the manipulator 3 puts the wafer 01 into the edge finder 4 for edge finding, so that the wafer 01 determines its position and angle according to the first positioning reference, and then the manipulator 3 puts the wafer 01 after edge finding into the storage box 2, automatically detects whether the wafer 01 is successfully separated from the graphite ring 02, reduces the positioning error caused by manual operation, and is beneficial to quickly edge finding and storing the wafer 01.

[0076] Reference Figure 10 As shown, in the embodiment, the correction driving mechanism 72 includes a correction X-axis module 721, a correction Y-axis module 722 drivingly connected with the correction X-axis module 721, and a correction rotating unit 723 drivingly connected with the correction Y-axis module 722, the correction X-axis module 721 drives the correction Y-axis module 722 to move along the X-axis, the correction X-axis module 721 and the correction Y-axis module 722 are linear motors, oil cylinders or electric cylinders, the correction rotating unit 723 is a servo motor or a driving motor, the correction Y-axis module 722 drives the correction rotating unit 723 to move along the Y-axis, the correction rotating unit 723 is drivingly connected with the correction table 71, and the correction rotating unit 723 is used to drive the correction table 71 to rotate, so as to smoothly meet the horizontal movement and horizontal rotation requirements of the graphite disc 03, and is beneficial to accurately adjusting the position and angle of the graphite disc 03.

[0077] Reference Figure 11As shown, in the embodiment, the disassembly and assembly driving mechanism 15 comprises a disassembly and assembly X-axis module 151, a disassembly and assembly Y-axis module 152 drivingly connected with the disassembly and assembly X-axis module 151, and a disassembly and assembly rotating unit 153 drivingly connected with the disassembly and assembly Y-axis module 152, the disassembly and assembly X-axis module 151 drives the disassembly and assembly Y-axis module 152 to move along the X-axis, the disassembly and assembly Y-axis module 152 drives the disassembly and assembly rotating unit 153 to move along the Y-axis, the disassembly and assembly rotating unit 153 is drivingly connected with the chassis 11, the disassembly and assembly X-axis module 151 and the disassembly and assembly Y-axis module 152 are linear motors, oil cylinders or electric cylinders, the disassembly and assembly rotating unit 153 is a servo motor or a driving motor, and the disassembly and assembly rotating unit 153 is used to drive the chassis 11 to rotate, thereby smoothly meeting the horizontal movement and horizontal rotation requirements of the graphite ring 02, facilitating accurate adjustment of the position and angle of the graphite ring 02; the disassembly and assembly rotating unit 153 is provided with a protective cover 1531, the protective cover 1531 is provided with an installation opening 1532 penetrating therethrough in the up-down direction, and the jacking mechanism 14 is arranged in the installation opening 1532, so that part of the structure of the jacking mechanism 14 can be hidden in the disassembly and assembly rotating unit 153, the structure is compactly arranged and ingenious, and space occupation is effectively saved.

[0078] Referring to Figure 12 As shown, in the embodiment, the ring bracket 12 is provided with a ring supporting opening 121, and when the ring bracket 12 supports the graphite ring 02, the bottom outer edge of the graphite ring 02 extends into the ring supporting opening 121 to support the graphite ring 02, so that the graphite ring 02 is conveniently positioned, and the positioning accuracy of the graphite ring 02 is improved.

[0079] Referring to Figure 13 As shown, in the embodiment, the bottom end of the graphite ring 02 is provided with an annular disc accommodating groove 021, the top end outer edge of the graphite disc 03 extends into the disc accommodating groove 021 when the graphite disc 03 is combined with the graphite ring 02, part of the graphite disc 03 is hidden in the graphite ring 02, the structure is compact, space occupation is saved, the graphite disc 03 is accurately positioned in the graphite ring 02, and the positioning accuracy is improved. Figure 14 As shown, the top end of the graphite ring 02 is provided with an annular sheet accommodating groove 022, the bottom end outer edge of the wafer 01 extends into the sheet accommodating groove 022 when the wafer 01 is combined with the graphite ring 02, part of the wafer 01 is hidden in the graphite ring 02, the structure is compact, space occupation is saved, and the wafer 01 is accurately positioned in the graphite ring 02.

[0080] Referring to Figure 6 , 8 , 9, the application further provides a SiC epitaxial disassembly and assembly detection system, comprising a laser sensor 100, an acquisition device 18 and a deviation correction collector 74.

[0081] The laser sensor 100 is used to detect whether the wafer 01 is separated from the graphite ring 02, and through the laser sensor 100, it is automatically detected whether the wafer 01 is successfully separated from the graphite ring 02, the positioning error of the wafer 01 caused by manual operation is reduced, the accuracy and efficiency of the wafer 01 processing are ensured, and the automation level and product quality of the wafer 01 processing are improved.

[0082] The deviation correction collector 74 is used for visual shooting to determine the position and angle of the graphite disc 03, and the position and angle of the graphite disc 03 are determined according to the third positioning reference, so that the graphite disc 03 can calibrate its own position and angle according to the third positioning reference, the edge finding and deviation correction of the graphite disc 03 can be independently completed by the deviation correction platform 7, a large amount of calibration time between the mechanical arm 3, the edge finder 4, the deviation correction platform 7 and the merging and splitting module 1 is saved, the equipment calculation complexity is reduced, and the wafer 01 positioning efficiency is effectively improved.

[0083] The collection device 18 is used for visual shooting to determine the position and angle of the graphite ring 02, and the position and angle of the graphite ring 02 are determined according to the second positioning reference, so that the edge finding and deviation correction of the graphite ring 02 can be independently completed by the merging and splitting module 1, a large amount of calibration time between the mechanical arm 3, the edge finder 4, the deviation correction platform 7 and the merging and splitting module 1 is saved, the equipment calculation complexity is reduced, and the wafer 01 positioning efficiency is effectively improved.

[0084] The above is only the preferred embodiment of the present application, and does not limit the present application in any form. Although the present application is disclosed as above, it is not intended to limit the present application. Any skilled person in the art can make some changes or modifications to the above disclosed technical content without departing from the technical solution of the present application, and any simple modification, equivalent change and modification of the above embodiment within the technical solution of the present application are all within the scope of the present application.

Claims

1. A SiC epitaxial split detection method, characterized by, The method comprises the following steps: S01, a merging and splitting module (1) and a mechanical arm (3) are provided, the mechanical arm (3) is used to take out the merged wafer (01), graphite ring (02) and graphite disc (03) from the epitaxial growth environment, and put them into the merging and splitting module (1); S02, a deviation rectification platform (7) is provided, the deviation rectification platform (7) is provided with a third positioning reference, the merging and splitting module (1) is used to separate the graphite disc (03) from the graphite ring (02), and the mechanical arm (3) is used to put the graphite disc (03) into the deviation rectification platform to rectify the edge, so that the graphite disc (03) determines its own position and angle according to the third positioning reference; S03, a laser sensor (100) is provided, the merging and splitting module (1) is used to separate the graphite ring (02) from the wafer (01), and the wafer (01) is moved away from the graphite ring (02), and the laser sensor (100) is used to detect whether the wafer (01) is separated from the graphite ring (02); S04, the merging and splitting module (1) is provided with a second positioning reference, and the merging and splitting module (1) is used to rectify the edge of the graphite ring (02) according to the second positioning reference, so that the graphite ring (02) determines its own position and angle according to the second positioning reference; S05, the mechanical arm (3) is used to put the graphite disc (03) into the merging and splitting module (1), and the merging and splitting module (1) is used to merge the graphite disc (03) with the graphite ring (02), so that the center position and angle information of the graphite disc (03) and the graphite ring (02) are consistent; S06, a cleaning mechanism (5) and a disc and ring placing box (6) are provided, the mechanical arm (3) is used to put the merged graphite disc (03) and graphite ring (02) into the cleaning mechanism (5) for cleaning and dust removal, the mechanical arm (3) is used to take out the cleaned and dust-removed merged graphite disc (03) and graphite ring (02) from the cleaning mechanism (5), and put the merged graphite disc (03) and graphite ring (02) into the disc and ring placing box (6).

2. The SiC epitaxial split detection method according to claim 1, characterized by, The merging and splitting module (1) comprises a base frame (11), a plurality of ring holders (12) connected to the top end of the base frame (11), a tray (13) and a jacking mechanism (14), the ring holders (12) are distributed in the circumferential direction of the base frame (11), the jacking mechanism (14) is drivingly connected with the tray (13), the base frame (11) is provided with an active port (111) penetrating therethrough, the output end of the jacking mechanism (14) penetrates the active port (111), and the jacking mechanism (14) drives the tray (13) to move up and down, so that the tray (13) moves up and down on the inner side of the ring holder (12); In step S01, when the mechanical arm (3) takes out the merged wafer (01), graphite ring (02) and graphite disc (03) from the epitaxial growth environment, the jacking mechanism (14) drives the tray (13) to move upward to the required height, and the mechanical arm (3) places the merged wafer (01), graphite ring (02) and graphite disc (03) on the tray (13), so that the ring holder (12) and the tray (13) support the graphite ring (02) and the graphite disc (03) respectively.

3. The SiC epitaxial split detection method of claim 1, wherein, The deflection correction platform (7) includes a deflection correction platform (71), a deflection correction driving mechanism (72) connected to the deflection correction platform (71), a deflection correction annular light source (73) and a deflection correction collector (74), wherein the deflection correction driving mechanism (72) is used to drive the deflection correction platform (71) to move along the X-axis and the Y-axis and to make the deflection correction platform (71) rotate, the deflection correction annular light source (73) is located between the deflection correction platform (71) and the deflection correction collector (74), the deflection correction collector (74) corresponds to the deflection correction annular light source (73), the third positioning reference is set on the deflection correction collector (74), and the deflection correction collector (74) is electrically connected to the deflection correction driving mechanism (72); When the graphite disk (03) is edge-finding, the manipulator (3) grabs the graphite disk (03) and places it on the deflection correction platform (71), and the graphite disk (03) is supported by the deflection correction platform (71). The deflection correction ring light source (73) supplements the light of the graphite disk (03). The deflection correction collector (74) visually photographs to determine the position and angle of the graphite disk (03). The deflection correction drive mechanism (72) drives the deflection correction platform (71) to move along the X-axis and / or the Y-axis according to the data obtained by the deflection correction collector (74), and causes the deflection correction platform (71) to rotate, so that the graphite disk (03) determines its own position and angle according to the third positioning reference, thereby completing the precise positioning of the graphite disk (03).

4. The SiC epitaxial split detection method of claim 2, wherein, In step S04, the merging and splitting module (1) further includes a merging and splitting driving mechanism (15), a merging and splitting annular light source (16), a surface light source (17) and a collection device (18), wherein the merging and splitting driving mechanism (15) is used to drive the base frame (11) to move along the X-axis and the Y-axis and to make the base frame (11) rotate, the merging and splitting annular light source (16) is located between the base frame (11) and the surface light source (17), the front end of the collection device (18) passes through the surface light source (17) and corresponds to the merging and splitting annular light source (16), the collection device (18) is electrically connected to the merging and splitting driving mechanism (15), and the second positioning reference is set on the collection device (18); When the graphite ring (02) is edge-finding and deflection-correcting, the graphite ring (02) is supported by the ring bracket (12), the surface light source (17) and the detachable ring light source (16) provide supplementary light to the graphite ring (02) and the acquisition device (18), the acquisition device (18) visually photographs to determine the position and angle of the graphite ring (02), and the detachable drive mechanism (15) drives the base frame (11) to move along the X-axis and / or the Y-axis according to the data obtained by the acquisition device (18), and causes the base frame (11) to rotate, so that the graphite ring (02) determines its own position and angle according to the second positioning reference, thereby completing the precise positioning of the graphite ring (02).

5. The SiC epitaxial split detection method of claim 4, wherein, In step S03, a storage box (2) and an edge finder (4) are provided, wherein the edge finder (4) is provided with a first positioning reference, so that the wafer (01) determines its own position and angle according to the first positioning reference; When the wafer (01) needs to be stored, the graphite ring (02) is edge finding and corrected, so that the graphite ring (02) determines its position and angle according to the second positioning reference, the lifting mechanism (14) drives the tray (13) to move upwards, so that the tray (13) supports and drives the wafer (01) to move away from the ring carrier (12), the laser sensor (100) is used to detect the distance from the wafer (01) and the graphite ring (02) respectively, so as to determine whether the wafer (01) is successfully separated from the graphite ring (02), when the wafer (01) is not separated from the graphite ring (02), the manipulator (3) grabs the wafer (01) and the graphite ring (02) to move out of the merging and splitting module, when the wafer (01) is determined to be separated from the graphite ring (02), the manipulator (3) puts the wafer (01) into the edge finder (4) for edge finding, so that the wafer (01) determines its position and angle according to the first positioning reference, and then the manipulator (3) puts the wafer (01) after edge finding into the storage box (2).

6. The SiC epitaxial split detection method of claim 3, wherein, The correction driving mechanism (72) comprises a correction X-axis module (721), a correction Y-axis module (722) in driving connection with the correction X-axis module (721), and a correction rotation unit (723) in driving connection with the correction Y-axis module (722), the correction X-axis module (721) drives the correction Y-axis module (722) to move along the X-axis, the correction Y-axis module (722) drives the correction rotation unit (723) to move along the Y-axis, and the correction rotation unit (723) is in driving connection with the correction table (71), and the correction rotation unit (723) is used to drive the correction table (71) to rotate.

7. The SiC epitaxial split detection method of claim 4, wherein, The disassembly and assembly driving mechanism (15) comprises a disassembly and assembly X-axis module (151), a disassembly and assembly Y-axis module (152) in driving connection with the disassembly and assembly X-axis module (151), and a disassembly and assembly rotation unit (153) in driving connection with the disassembly and assembly Y-axis module (152), the disassembly and assembly X-axis module (151) drives the disassembly and assembly Y-axis module (152) to move along the X-axis, the disassembly and assembly Y-axis module (152) drives the disassembly and assembly rotation unit (153) to move along the Y-axis, the disassembly and assembly rotation unit (153) is in driving connection with the bottom frame (11), the disassembly and assembly rotation unit (153) is used to drive the bottom frame (11) to rotate, and the disassembly and assembly rotation unit (153) is provided with a protective cover (1531), the protective cover (1531) is provided with a mounting opening (1532) penetrating therethrough, and the lifting mechanism (14) is arranged in the mounting opening (1532).

8. The SiC epitaxial split detection method of claim 2, wherein, The ring carrier (12) is provided with a ring supporting opening (121), and when the ring carrier (12) supports the graphite ring (02), the bottom outer edge of the graphite ring (02) extends into the ring supporting opening (121).

9. The SiC epitaxial split detection method of claim 1, wherein, The bottom end of the graphite ring (02) is provided with an annular disc accommodating groove (021), the top end outer edge of the graphite disc (03) extends into the disc accommodating groove (021) when the graphite disc (03) is combined with the graphite ring (02), the top end of the graphite ring (02) is provided with an annular sheet accommodating groove (022), and the bottom end outer edge of the wafer (01) extends into the sheet accommodating groove (022) when the wafer (01) is combined with the graphite ring (02).

10. A SiC epitaxial split detection system for use in the SiC epitaxial split detection method according to any one of claims 1 to 9, characterized by The laser sensor (100), the acquisition device (18) and the deviation correction collector (74) are included. The laser sensor (100) is used for detecting whether the wafer (01) is separated from the graphite ring (02). The deviation correction collector (74) is used for determining the position and angle of the graphite disc (03) through visual shooting, and determining the position and angle of the graphite disc (03) through a third positioning reference. The acquisition device (18) is used for determining the position and angle of the graphite ring (02) through visual shooting, and determining the position and angle of the graphite ring (02) through a second positioning reference.

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