Radio frequency amplification device based on bias voltage

Abstract

The invention discloses a radio frequency amplification device based on bias voltage. The device comprises a signal amplification link circuit and a biasing circuit, the signal amplification link circuit comprises a resistor unit and a multi-stage amplifier chip; the resistor unit is connected with the biasing circuit; the biasing circuit is electrically connected with the multiple stages of amplifier chips; the bias circuit is used for outputting a fluctuation bias voltage signal to the multiple stages of amplifier chips; wherein the fluctuation bias voltage signal positively changes along with the resistance change proportion of the resistance unit, and when the resistance change proportion is 1, the fluctuation bias voltage signal is preset bias voltage; and the resistance change proportion of the resistor unit is the same as the resistance change proportion of the fixed resistor on the multi-stage amplifier chip. According to the scheme, the large fluctuation of the quiescent current is remarkably improved.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of communication technology, and in particular to a radio frequency amplification device based on bias voltage. Background Art

[0002] With the continuous development of communication technology, mobile communication terminals have higher and higher performance requirements for RF front-end modules. Among them, the RF amplifier (power amplifier, RF) is an important component of the RF front-end module, and its main technical performance indicators such as bandwidth, gain, loss, linearity, transmission power and efficiency, and service life are particularly important.

[0003] The internal structure of the RF amplifier can be divided into two parts: the signal amplification link circuit and the bias circuit. The bias circuit will output a stable voltage to control the opening and closing of the amplifier and the quiescent current. In practice, the quiescent current of the RF power amplifier has a large fluctuation. The quiescent current fluctuation of the RF amplifier is not only determined by the fluctuation of the bias circuit, but also depends on the fluctuation of the internal component parameters of the amplifier chip in the signal amplification link circuit. Generally speaking, the output voltage of the bias circuit has good anti-fluctuation resistance. The internal component parameters of the amplifier chip include the resistance value, the base and emitter voltages in the heterojunction bipolar transistor (ie: HBT Vbe) and the amplifier current gain β, etc. Among them, the resistance value is one of the most critical fluctuation influencing factors. At present, the amplifier chip is made of GaAs HBT process, and the GaAs HBT process can integrate high-precision thin-film resistors. The purpose of GaAs HBT high-precision thin-film resistors is to control the fluctuation of the overall quiescent current of the circuit through smaller resistance fluctuations, but the quiescent current of the circuit still has large fluctuations, which significantly affects the amplifier characteristics. Summary of the invention

[0004] The present invention provides a radio frequency amplification device based on bias voltage, so as to realize the integration of a resistance unit on a signal amplification link circuit, wherein the resistance unit is connected to a bias circuit, and at the same time, ensure that the bias circuit outputs a fluctuating bias voltage signal following the resistance change ratio of the resistance unit, thereby compensating for the static current fluctuation caused by the corresponding resistance change ratio fluctuation of the fixed resistor in the signal amplification link circuit, thereby significantly improving the large fluctuation of the static current.

[0005] To achieve the above objectives, an embodiment of the present invention provides a radio frequency amplification device based on bias voltage, the device comprising: a signal amplification link circuit and a bias circuit; the signal amplification link circuit comprises a resistor unit and a multi-stage amplifier chip; the resistor unit is connected to the bias circuit; the bias circuit is electrically connected to the multi-stage amplifier chip;

[0006] The bias circuit is used to output a fluctuating bias voltage signal to the multi-stage amplifier chip; wherein the fluctuating bias voltage signal changes positively with the resistance change ratio of the resistance unit and when the resistance change ratio is 1, the fluctuating bias voltage signal is a preset bias voltage;

[0007] The resistance change ratio of the resistance unit is the same as the resistance change ratio of the fixed resistors on the multi-stage amplifier chip.

[0008] Optionally, the resistor unit includes at least one resistor; each resistor is arranged in one-to-one correspondence with each level of the amplifier chip;

[0009] And / or, each resistor is arranged corresponding to the amplifier chip at any level.

[0010] Optionally, the first end of the resistance unit is connected to the bias circuit; the second end of the resistance unit is grounded;

[0011] Alternatively, the first end of the resistor unit is connected to the bias circuit; the second end of the resistor unit is connected to a fixed potential;

[0012] Alternatively, two ends of the resistance unit are connected in series in the bias circuit.

[0013] Optionally, the bias circuit includes: a first resistor, a second resistor and an amplifier;

[0014] The first end of the first resistor is electrically connected to the first end of the resistor unit; the second end of the resistor unit is grounded; the second end of the first resistor is electrically connected to the first end of the second resistor and the first end of the amplifier; the second end of the second resistor is electrically connected to a voltage source; the second end of the amplifier is electrically connected to the output end of the amplifier and the multi-stage amplifier chip.

[0015] Optionally, the bias circuit further includes: a current source;

[0016] One end of the current source is electrically connected to the first end of the first resistor and the first end of the resistor unit; the other end of the current source is connected to a voltage source.

[0017] Optionally, each level of the amplifier chip includes an amplifier chip bias branch and an amplifier chip body;

[0018] The bias circuit is electrically connected to the multi-stage amplifier chip bias branch; the amplifier chip bias branch is electrically connected to the amplifier chip body;

[0019] The amplifier chip bias branch is used to receive and transmit the fluctuating bias voltage signal to the amplifier chip body so that the amplifier body outputs a radio frequency amplified signal.

[0020] Optionally, the amplifier chip bias branch includes: a first transistor, a second transistor, a third transistor, a first capacitor and a third resistor;

[0021] The first end of the third resistor is electrically connected to the bias circuit; the second end of the third resistor is electrically connected to the control end of the first transistor and the first end of the first transistor; the second end of the first transistor is electrically connected to the first end of the second transistor and the control end of the second transistor; the second end of the second transistor is grounded; the first end of the first transistor is electrically connected to the first end of the first capacitor; the second end of the first capacitor is grounded; the first end of the first capacitor is also electrically connected to the control end of the third transistor; the first end of the third transistor is electrically connected to a voltage source; and the second end of the third transistor is electrically connected to the amplifier chip body.

[0022] The third resistor is used as a fixed resistor on the multi-stage amplifier chip.

[0023] Optionally, the amplifier chip body includes: a second capacitor, a fourth resistor and a fourth transistor;

[0024] The first end of the second capacitor serves as the first input end of the amplifier chip body; the second end of the second capacitor is electrically connected to the second end of the fourth resistor; the second end of the fourth resistor serves as the second input end of the amplifier chip body; the second end of the second capacitor is electrically connected to the control end of the fourth transistor, the second end of the fourth transistor is grounded, and the first end of the fourth transistor serves as the output end of the amplifier chip body;

[0025] The third resistor and the fourth resistor are used as fixed resistors on the multi-stage amplifier chip.

[0026] Optionally, the signal amplification link circuit and the bias circuit are made in different processes;

[0027] And / or, the signal amplification link circuit and the bias circuit adopt the same process.

[0028] Optionally, the first transistor, the second transistor, the third transistor and the fourth transistor all include any form of a bipolar junction transistor and a field effect transistor.

[0029] In an embodiment of the present invention, a resistor unit is integrated on a signal amplification link circuit, the resistor unit is connected to a bias circuit, and at the same time, the bias circuit is ensured to output a fluctuating bias voltage signal following the resistance change ratio of the resistor unit, wherein the fluctuating bias voltage signal changes positively following the resistance change ratio of the resistor unit and when the resistance change ratio is 1, the fluctuating bias voltage signal is a preset bias voltage; in this way, since the resistor unit is integrated on the signal amplification link, its resistance change ratio is the same as the resistance change ratio of the fixed resistor on the multi-stage amplifier chip, thereby compensating for the static current fluctuation caused by the corresponding resistance change ratio of the fixed resistor in the multi-stage amplifier chip, thereby significantly improving the large fluctuation of the static current.

[0030] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0032] Figure 1 It is a relationship diagram between the resistance change ratio K and the static current of the amplifier chip in the prior art;

[0033] Figure 2 It is a structural schematic diagram of a radio frequency amplification device based on bias voltage provided by an embodiment of the present invention;

[0034] Figure 3 is a schematic structural diagram of another bias voltage-based radio frequency amplification device provided in an embodiment of the present invention;

[0035] Figure 4 is a schematic structural diagram of another bias voltage-based radio frequency amplification device provided in an embodiment of the present invention;

[0036] Figure 5 is a schematic structural diagram of another bias voltage-based radio frequency amplification device provided in an embodiment of the present invention;

[0037] Figure 6 is a schematic structural diagram of another bias voltage-based radio frequency amplification device provided in an embodiment of the present invention;

[0038] Figure 7 is a schematic structural diagram of another bias voltage-based radio frequency amplification device provided in an embodiment of the present invention;

[0039] Figure 8 It is a structural schematic diagram of another radio frequency amplification device based on bias voltage provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0040] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0041] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0042] The quiescent current of the RF amplifier device is the current of each level of the internal amplifier chip when the RF input signal is 0 and the bias circuit outputs a certain bias voltage. Generally, the quiescent current is related to the fixed resistance of each level of the amplifier chip and the bias voltage output by the bias circuit. In actual processes, due to the process changes inside each level of the amplifier chip, the fixed resistance of each level of the amplifier chip will fluctuate. Figure 1 It is a relationship diagram between the resistance change ratio K and the static current of each level of amplifier chips in the prior art; the resistance change ratio K is the ratio between the current resistance value after the change and the unchanged resistance value, such as Figure 1 As shown, based on Ohm's law, when the bias voltage is constant, when the resistance change ratio K of each amplifier chip is large, that is, when the resistance value of the current fixed resistor is large, the static current is small; when the resistance change ratio K of each amplifier chip is small, that is, when the resistance value of the current fixed resistor is small, the static current is large; in this way, the static current on each amplifier chip will fluctuate greatly with the resistance change ratio of its fixed resistor; and the bias voltage output by the general bias circuit is a stable voltage, which will not affect the change of the static current.

[0043] To solve the above specific problems, Figure 2 is a schematic diagram of the structure of a radio frequency amplification device based on bias voltage provided by an embodiment of the present invention, such as Figure 2 As shown, the RF amplification device based on bias voltage includes: a signal amplification link circuit 10 and a bias circuit 20; the signal amplification link circuit 10 includes a resistor unit 11 and a multi-stage amplifier chip 12; the resistor unit 11 is connected to the bias circuit 20; the bias circuit 20 is electrically connected to the multi-stage amplifier chip 12;

[0044] The bias circuit 20 is used to output a fluctuating bias voltage signal to the multi-stage amplifier chip 12; wherein the fluctuating bias voltage signal changes positively with the resistance change ratio of the resistance unit 11 and when the resistance change ratio is 1, the fluctuating bias voltage signal is a preset bias voltage; the resistance change ratio of the resistance unit 11 is the same as the resistance change ratio of the fixed resistor on the multi-stage amplifier chip 12.

[0045] In this embodiment, when the resistor unit 11 is connected to the bias circuit 20, it is ensured that the bias circuit 20 outputs a fluctuating bias voltage signal Vbias, wherein the fluctuating bias voltage signal Vbias follows the positive change of the resistance of the resistor unit 11; and when the resistance change ratio is 1, the fluctuating bias voltage signal is a preset bias voltage; specifically, Vbias= f(RX / RX0) can be satisfied, f is an increasing function, and Vbias0= f(1); RX / RX0 is the resistance change ratio of the resistor unit 11; the resistance change ratio of the resistor unit 11 is the ratio between the resistance value RX of the current resistor unit 11 after the change and the resistance value RX0 of the unchanged resistor unit 11; the resistor unit 11 is integrated in the signal amplification link circuit 10, and due to the influence of the same process on the signal amplification link circuit, the real-time resistance change ratio RX / RX0 of the resistor unit 11 is the same as the resistance change ratio of the fixed resistor on the multi-stage amplifier chip 12; Vbias0 is the preset bias voltage; the preset bias voltage can be based on Figure 1 The determined rational steady-state quiescent current I' is determined by the fixed resistance of the multi-stage amplifier chip 12;

[0046] More specifically, from the above formula Vbias = f(RX / RX0), when the resistance change ratio of the resistor unit 11 is large, that is, when the resistance value Rx of the resistor unit 11 is large, the fluctuation bias voltage signal Vbias is large. Since the resistance change ratio of the resistor unit 11 is the same as the resistance change ratio of the fixed resistor on the multi-stage amplifier chip 12, this can compensate for Figure 1The smaller static current is caused by the larger resistance change ratio of the fixed resistors on the multi-stage amplifier chip 12; when the resistance change ratio of the resistor unit 11 is smaller, that is, when the resistance value Rx of the resistor unit 11 decreases, the fluctuation bias voltage signal Vbias is smaller, thus compensating for the larger static current caused by the smaller resistance change ratio of the fixed resistors on the multi-stage amplifier chip 12;

[0047] It can be understood that, in this embodiment, f in Vbias=f(RX / RX0) can be a single-increasing function or other multiple-increasing functions; the corresponding bias circuit 20 can be a corresponding different circuit structure; this embodiment does not specifically limit the circuit structure of the bias circuit 20.

[0048] The multi-stage amplifier chip 12 includes a single-stage, a two-stage or a multi-stage amplifier chip; the multi-stage amplifier chip 12 can be of various topological structure types, which is not specifically limited in this embodiment; the multi-stage amplifier chip 12 can output a static current with small fluctuation when the bias circuit 20 outputs a fluctuating bias voltage signal Vbias.

[0049] In this embodiment, when the fixed resistance on the multi-stage amplifier chip 12 fluctuates, the resistance unit 11 is integrated on the signal amplification link circuit 10, and the resistance unit 11 is connected to the bias circuit 20 at the same time, so as to ensure that the bias circuit 20 outputs the fluctuating bias voltage signal Vbias following the resistance change ratio of the resistance unit 11. Since the resistance unit 11 is integrated on the signal amplification link 10, its resistance change ratio is the same as the resistance change ratio of the fixed resistance on the multi-stage amplifier chip 12. In this way, the fluctuating bias voltage signal Vbias is output to the multi-stage amplifier chip 12, which can compensate for the static current fluctuation caused by the corresponding resistance change ratio of the fixed resistance in the multi-stage amplifier chip 12, thereby significantly improving the large fluctuation of the static current, thereby further reducing the subsequent key indicators of the multi-stage amplifier chip 12, such as gain, output power, efficiency and linearity.

[0050] Optionally, based on the above embodiment, the structure of the resistance unit 11 is further refined. Figure 3 is a schematic structural diagram of another bias voltage-based radio frequency amplification device provided in an embodiment of the present invention; Figure 4 is a schematic structural diagram of another RF amplification device based on bias voltage provided in an embodiment of the present invention; Figure 3 As shown, the resistor unit 11 includes at least one resistor 111; each resistor 111 is arranged in a one-to-one correspondence with each level of the amplifier chip 12; and / or, as Figure 4As shown, each resistor 111 is arranged corresponding to any one-stage amplifier chip 12; since the resistor unit 11 is integrated in the signal amplification link circuit 10, the resistance change ratio is consistent with that of the fixed resistor on the multi-stage amplifier chip 12, and the present embodiment does not limit the number of resistor units in the resistor unit 11; at the same time, the setting position relationship between the resistor unit 11 and each stage of the amplifier chip 12 is not limited.

[0051] Optional, see Figure 2-4 , the first end of the resistor unit 11 is connected to the bias circuit 20; the second end of the resistor unit 11 is grounded; or, the first end of the resistor unit 11 is connected to the bias circuit 20; the second end of the resistor unit 11 is connected to a fixed potential; or, the resistor unit 11 is connected in series in the bias circuit 20; the connection method between the resistor unit 11 and the bias circuit 20 is not specifically limited; it is only necessary to ensure that the bias circuit 20 outputs a fluctuating bias voltage signal Vbias, wherein the fluctuating bias voltage signal Vbias changes positively with the resistance change ratio of the resistor unit 11; that is, Vbias= f(RX / RX0) is satisfied, f is an increasing function, and Vbias0= f(1).

[0052] The following is an explanation of different specific circuit structures of the bias circuit 20; Figure 5 is a schematic diagram of the structure of another RF amplification device based on bias voltage provided by an embodiment of the present invention, such as Figure 5 As shown, in some embodiments, the bias circuit 20 includes: a first resistor Ra, a second resistor Rb and an operational amplifier D1; the first end of the first resistor Ra is electrically connected to the first end of the resistor unit 21; the second end of the resistor unit 11 is grounded; the second end of the first resistor Ra is electrically connected to the first end of the second resistor Rb and the first end of the operational amplifier D1; the second end of the second resistor Rb is electrically connected to the voltage source Vref; the second end of the operational amplifier D1 is electrically connected to the output end of the operational amplifier D1 and the multi-stage amplifier chip 12.

[0053] Among them, using the "virtual short" characteristic of the closed-loop operational amplifier D1, the DC voltage across the operational amplifier D1 is Vbias; based on this: it can be determined that:

[0054]

[0055] It can be further determined that:

[0056]

[0057] From formula (2), we can get: When Rx increases, Vbias also increases, that is, when R X / R X0When the resistance change ratio increases, Vbias increases synchronously, thereby compensating for the static current fluctuation caused by the corresponding resistance change ratio of the fixed resistor in the multi-stage amplifier chip 12.

[0058] In other embodiments, Figure 6 is a schematic diagram of the structure of another RF amplification device based on bias voltage provided by an embodiment of the present invention, such as Figure 6 As shown, the bias circuit 20 includes: a current source I0, a first resistor Ra, a second resistor Rb and an operational amplifier D1; one end of the current source I0 is electrically connected to the first end of the first resistor Ra and the first end of the resistor unit 11; the other end of the current source I0 is connected to the voltage source; the second end of the resistor unit 11 is grounded; the second end of the first resistor Ra is electrically connected to the first end of the second resistor Rb and the first end of the operational amplifier D1; the second end of the second resistor Rb is electrically connected to the voltage source Vref; the second end of the operational amplifier D1 is electrically connected to the output end of the operational amplifier D1 and the multi-stage amplifier chip 12.

[0059] The “virtual short” characteristic of the closed-loop operational amplifier D1 is used, and the DC voltage across the operational amplifier D1 is Vbias; the current flowing through the resistor unit 11 is set to I1, and the current flowing through the first resistor Ra is set to I2; is the changed voltage value of the first end of the resistor unit 11; based on this, we can obtain:

[0060]

[0061]

[0062]

[0063]

[0064] From the above formulas (3), (4), (5), (6), we can further determine:

[0065]

[0066] From formula (7), we can get: When Rx increases, Vbias also increases, that is, when R X / R X0 When the resistance change ratio increases, Vbias increases synchronously, thereby compensating for the static current fluctuation caused by the corresponding resistance change ratio of the fixed resistor in the multi-stage amplifier chip 12.

[0067] Of course, it is understandable that the bias circuit 20 may also be other circuit structures; the above embodiment is only an exemplary description of the bias circuit 20.

[0068] Optional, Figure 7is a schematic diagram of the structure of another RF amplification device based on bias voltage provided by an embodiment of the present invention, such as Figure 7 As shown, each amplifier chip 12 includes an amplifier chip bias branch 121 and an amplifier chip body 122; the bias circuit 20 is electrically connected to the multi-stage amplifier chip bias branch 121; the amplifier chip bias branch 121 is electrically connected to the amplifier chip body 122; the amplifier chip bias branch 121 is used to receive and transmit a fluctuating bias voltage signal to the amplifier chip body 122 so that the amplifier body 122 outputs a radio frequency amplified signal. The amplifier chip bias branch 121 and the amplifier chip body 122 can be any topological structure; this embodiment is not limited to this.

[0069] Optional, Figure 8 is a schematic diagram of the structure of another RF amplification device based on bias voltage provided by an embodiment of the present invention, such as Figure 8 As shown, the amplifier chip bias branch 121 includes: a first transistor Q1, a second transistor Q2, a third transistor Q3, a first capacitor C1 and a third resistor R11; the first end of the third resistor R11 is electrically connected to the bias circuit 20; the second end of the third resistor R11 is electrically connected to the control end of the first transistor Q1 and the first end of the first transistor Q1; the second end of the first transistor Q1 is electrically connected to the first end of the second transistor Q2 and the control end of the second transistor Q2; the second end of the second transistor Q2 is grounded; the first end of the first transistor Q1 is electrically connected to the first end of the first capacitor C1; the second end of the first capacitor C1 is grounded; the first end of the first capacitor C1 is also electrically connected to the control end of the third transistor Q3; the first end of the third transistor Q3 is electrically connected to the voltage source Vbat; the second end of the third transistor Q3 is electrically connected to the amplifier chip body 122. Among them, the third resistor R11 serves as a fixed resistor on the multi-stage amplifier chip 12.

[0070] Specifically, in this embodiment, the fluctuating bias voltage signal output by the bias circuit 20 is converted into a fluctuating bias current signal through the third resistor R11, and then the fluctuating bias current signal is transmitted to the amplifier chip body 122 through the current mirror formed by the first transistor Q1, the second transistor Q2, and the third transistor Q3. The first capacitor C1 can play a filtering role. The third resistor R11 can be a thin film resistor or a non-thin film resistor, which is not limited in this embodiment. Since the inside of the amplifier chip is affected by process changes, the third resistor R11, as a fixed resistor on the amplifier chip, will directly affect the fluctuation size of the static current; preferably, the resistance value of the third resistor R11 can satisfy 10Ω≤R1≤100Ω; the resistance value of the third resistor R11 satisfies 10Ω≤R1≤100Ω, which can ensure that the static current fluctuation can be within a certain range and will not cause the static current fluctuation range to be uncontrollable.

[0071] Optional, continue to refer to Figure 8 The amplifier chip body 122 includes: a second capacitor C2, a fourth resistor R12 and a fourth transistor Q4; the first end of the second capacitor C2 serves as the first input end of the amplifier chip body 121 for receiving a radio frequency signal; the second end of the second capacitor C2 is electrically connected to the second end of the fourth resistor R12; the second end of the fourth resistor R12 serves as the second input end of the amplifier chip body 121; the second end of the second capacitor C2 is electrically connected to the control end of the fourth transistor Q4, the second end of the fourth transistor Q4 is grounded, and the first end of the fourth transistor Q4 serves as the output end of the amplifier chip body 122; wherein the third resistor R11 and the fourth resistor R12 serve as fixed resistors on the multi-stage amplifier chip 12.

[0072] In this embodiment, under the control of the fluctuating bias voltage signal, the input RF signal is amplified and processed to output the RF amplified signal through the second capacitor C2, the fourth resistor R12 and the fourth transistor Q4 in combination with the amplifier chip bias branch 121. The fourth resistor R12 can be a thin film resistor or a non-thin film resistor, which is not limited in this embodiment.

[0073] Optional, see Figure 2-8 , the signal amplification link circuit 10 and the bias circuit 20 have different processes; and / or, the signal amplification link circuit 10 and the bias circuit 20 use the same process. Exemplarily, the signal amplification link circuit 10 and the bias circuit 20 can both use GaAs HBT process; in this way, the preparation of the overall RF amplification device based on bias voltage is simple; the signal amplification link circuit 10 and the bias circuit 20 can have different processes, such as the signal amplification link circuit 10 uses CMOS process, and the bias circuit 20 uses GaAs HBT process, so that the design type of the bias circuit 20 can be diverse, so as to better compensate for the fluctuation of static current.

[0074] Optional, see Figure 8 The first transistor Q1, the second transistor Q2, the third transistor Q3 and the fourth transistor Q4 all include any form of a bipolar junction transistor and a field effect transistor, which is not limited in this embodiment.

[0075] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A radio frequency amplification device based on bias voltage, characterized in that: include: A signal amplification link circuit and a bias circuit; the signal amplification link circuit comprises a resistor unit and a multi-stage amplifier chip; The resistance unit is connected to the bias circuit; The bias circuit is electrically connected to the multiple stages of amplifier chips; The bias circuit is used to output a fluctuating bias voltage signal to the multi-stage amplifier chip; wherein the fluctuating bias voltage signal changes positively with the resistance change ratio of the resistance unit and when the resistance change ratio is 1, the fluctuating bias voltage signal is a preset bias voltage; The resistance change ratio of the resistance unit is the same as the resistance change ratio of the fixed resistors on the multi-stage amplifier chip.

2. The RF amplification device based on bias voltage according to claim 1, characterized in that: The resistor unit includes at least one resistor; each resistor is arranged in one-to-one correspondence with each level of the amplifier chip; And / or, each resistor is arranged corresponding to the amplifier chip at any level.

3. The RF amplification device based on bias voltage according to claim 1, characterized in that: The first end of the resistor unit is connected to the bias circuit; the second end of the resistor unit is grounded; Alternatively, the first end of the resistor unit is connected to the bias circuit; the second end of the resistor unit is connected to a fixed potential; Alternatively, two ends of the resistance unit are connected in series in the bias circuit.

4. The RF amplification device based on bias voltage according to claim 1, characterized in that: The bias circuit includes: a first resistor, a second resistor and an amplifier; The first end of the first resistor is electrically connected to the first end of the resistor unit; the second end of the resistor unit is grounded; the second end of the first resistor is electrically connected to the first end of the second resistor and the first end of the amplifier; the second end of the second resistor is electrically connected to a voltage source; the second end of the amplifier is electrically connected to the output end of the amplifier and the multi-stage amplifier chip.

5. The RF amplification device based on bias voltage according to claim 4, characterized in that: The bias circuit further includes: a current source; One end of the current source is electrically connected to the first end of the first resistor and the first end of the resistor unit; the other end of the current source is connected to a voltage source.

6. The RF amplification device based on bias voltage according to claim 1, characterized in that: The amplifier chips at each level include an amplifier chip bias branch and an amplifier chip body; The bias circuit is electrically connected to the multi-stage amplifier chip bias branch; the amplifier chip bias branch is electrically connected to the amplifier chip body; The amplifier chip bias branch is used to receive and transmit the fluctuating bias voltage signal to the amplifier chip body so that the amplifier body outputs a radio frequency amplified signal.

7. The RF amplification device based on bias voltage according to claim 6, characterized in that: The amplifier chip bias branch includes: a first transistor, a second transistor, a third transistor, a first capacitor and a third resistor; The first end of the third resistor is electrically connected to the bias circuit; the second end of the third resistor is electrically connected to the control end of the first transistor and the first end of the first transistor; the second end of the first transistor is electrically connected to the first end of the second transistor and the control end of the second transistor; the second end of the second transistor is grounded; the first end of the first transistor is electrically connected to the first end of the first capacitor; the second end of the first capacitor is grounded; the first end of the first capacitor is also electrically connected to the control end of the third transistor; the first end of the third transistor is electrically connected to a voltage source; the second end of the third transistor is electrically connected to the amplifier chip body; The third resistor is used as a fixed resistor on the multi-stage amplifier chip.

8. The radio frequency amplification device based on bias voltage according to claim 7, characterized in that: The amplifier chip body includes: a second capacitor, a fourth resistor and a fourth transistor; The first end of the second capacitor serves as the first input end of the amplifier chip body; the second end of the second capacitor is electrically connected to the second end of the fourth resistor; the second end of the fourth resistor serves as the second input end of the amplifier chip body; the second end of the second capacitor is electrically connected to the control end of the fourth transistor, the second end of the fourth transistor is grounded, and the first end of the fourth transistor serves as the output end of the amplifier chip body; The third resistor and the fourth resistor are used as fixed resistors on the multi-stage amplifier chip.

9. The radio frequency amplification device based on bias voltage according to claim 1, characterized in that: The signal amplification link circuit and the bias circuit are made in different processes; And / or, the signal amplification link circuit and the bias circuit adopt the same process.

10. The radio frequency amplification device based on bias voltage according to claim 8, characterized in that: The first transistor, the second transistor, the third transistor and the fourth transistor each include any one of a bipolar junction transistor and a field effect transistor.

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