Wide voltage switch and integrated circuit chip

Abstract

The invention relates to a wide voltage switch and an integrated circuit chip. The wide voltage switch comprises a level conversion circuit and a voltage division circuit, the voltage division circuit provides the divided voltage changing along with the power supply voltage to the level conversion circuit to serve as the bias voltage of the corresponding transistor, no matter the power supply voltage is high or low, the corresponding transistor in the level conversion circuit can be guaranteed to be switched on, and therefore whether the power supply voltage is transmitted to the output voltage or not is controlled based on the enable input signal; and meanwhile, corresponding transistors can be prevented from being broken down, so that the corresponding transistors can uniformly adopt low-voltage domain devices (such as 2.5 V devices), and the mask cost is saved. Optionally, the transistor can adopt an MOS (Metal Oxide Semiconductor) tube, and compared with a BJT (Bipolar Junction Transistor) tube, the MOS tube does not consume more current, so that the power consumption is not additionally increased.

Description

Technical Field

[0001] The invention relates to a wide voltage switch and an integrated circuit chip. Background Art

[0002] In an integrated circuit chip, the chip power supply provides power supply voltage to the chip core. In order to reduce power consumption, a switch is usually set between the chip power supply and the chip core. When the switch is closed, the chip power supply supplies power to the chip core; when the switch is open, the chip power supply does not supply power to the chip core, so that the chip core can be shut down when necessary.

[0003] There are many voltage domains for power supply voltage, such as 1.2V, 1.8V, 2.5V, 2.7V, 3.0V, 3.3V and 5.0V. There is a scenario where the power supply voltage is 2.7V at some times, providing 2.7V power supply for the chip core; the power supply voltage is 5.5V at other times, providing 5.5V power supply for the chip core. In this scenario, in order to adapt to these voltage domains, switches with higher voltage tolerance can be selected, such as PMOS tubes or PNP-type BJT tubes with a maximum voltage tolerance of 5.5V.

[0004] However, when selecting chip design processes, in order to balance speed and cost considerations, there are usually only two voltage domain devices. For example, for MOS tubes (Metal Oxide Semiconductor Field Effect Transistor, referred to as MOS tubes in this article), the typical operating voltage is 1.2V and 2.5V; and for BJT tubes (Bipolar Junction Transistor, referred to as BJT tubes in this article), the typical operating voltage is 1.5V and 3.3V. Therefore, devices with higher voltage tolerance will not be selected. At this time, neither 2.5V MOS tubes nor 3.3V BJT tubes can withstand the high power supply voltage of 5.5V alone.

[0005] In addition, when a PNP-type BJT tube is used as a switch, when the PNP-type BJT tube is turned on, if the current is large, its base will also consume more current, thereby additionally increasing power consumption.

[0006] Therefore, there is an urgent need for a means to adapt to a wide range of power supply voltages and to reliably achieve the closing and opening of the switch between the chip power supply and the chip core. Summary of the invention

[0007] The purpose of the present invention is to provide a wide voltage switch and an integrated circuit chip that can adapt to a wide range of power supply voltages, use low voltage domain devices to reliably achieve the closing and opening of the switch, and do not need to set different switches for different power supply voltages, thus saving mask costs.

[0008] The present invention discloses a wide voltage switch, including a level conversion circuit and a voltage divider circuit; the level conversion circuit includes first to eighth transistors, the first to fourth transistors are first type transistors, the fifth to eighth transistors are second type transistors, and each transistor includes a control end, a first end, and a second end; the first end of the first transistor and the first end of the second transistor are both connected to a power supply voltage, the control end of the first transistor is connected to the second end of the second transistor, the control end of the second transistor is connected to the second end of the first transistor, the second end of the first transistor and the second end of the second transistor are also connected to the first end of the third transistor and the first end of the fourth transistor, respectively, the second end of the third transistor and the second end of the fourth transistor are connected to the second end of the fifth transistor and the sixth transistor, respectively. the second end of the power supply voltage is connected to the first end of the fifth transistor and the first end of the sixth transistor are respectively connected to the second end of the seventh transistor and the second end of the eighth transistor, and the first end of the seventh transistor and the first end of the eighth transistor are both grounded; the control end of the seventh transistor and the control end of the eighth transistor respectively receive complementary enable signals; the second end of the fourth transistor is connected to the second end of the sixth transistor and is used to provide an output voltage; a voltage divider circuit is used to divide the power supply voltage, the input end of the voltage divider circuit is connected to the power supply voltage, the output end of the voltage divider circuit is respectively connected to the control end of the third transistor, the control end of the fourth transistor, the control end of the fifth transistor and the control end of the sixth transistor, and the output end of the voltage divider circuit is used to output a divided voltage that follows the change of the power supply voltage.

[0009] In this solution, the voltage divider circuit provides a divided voltage to the level conversion circuit as a bias voltage for the corresponding transistor. Because the divided voltage is a divided voltage of the power supply voltage, the voltage value of the divided voltage is less than the power supply voltage, and the divided voltage changes dynamically with the power supply voltage. When the power supply voltage is high, the divided voltage is also high, so that the voltage shared by each transistor in the level conversion circuit is reduced, which can avoid the corresponding transistor from being broken down; when the power supply voltage is low, the divided voltage is also low, so that the gate-source voltage of the transistor that needs to be turned on is greater than the turn-on voltage, ensuring that the corresponding transistor in the level conversion circuit can be turned on. Therefore, regardless of the high or low power supply voltage, the voltage difference between the divided voltage and the power supply voltage can meet the following requirements through voltage division: it can ensure that the corresponding transistor in the level conversion circuit is turned on, thereby controlling whether the power supply voltage is passed to the output voltage based on the enable signal, and at the same time, it can also avoid the corresponding transistor from being broken down, so that the corresponding transistor can uniformly use low-voltage domain devices (such as 2.5V devices), and save mask costs.

[0010] Optionally, the transistor may be a MOS tube. Compared with a BJT tube, a MOS tube does not consume more current, thereby not increasing power consumption.

[0011] In one embodiment, the voltage value of the power supply voltage and the voltage value of the divided voltage satisfy the following formula: ,in, is the voltage value of the power supply voltage, is the voltage value of the divided voltage, is the absolute value of the threshold voltage of the first type transistor. Optionally, the voltage value of the divided voltage is half or less than the voltage value of the power supply voltage.

[0012] In this scheme, the divided voltage generated by the voltage divider circuit is lower than the power supply voltage and changes dynamically with the change of the power supply voltage. When the voltage value of the power supply voltage is higher, the voltage value of the divided voltage can also be higher, and when the voltage value of the power supply voltage is lower, the voltage value of the divided voltage can also be lower.

[0013] In one embodiment, the voltage divider circuit includes a first resistor and a second resistor; the first end of the first resistor is connected to the power supply voltage, the second end of the first resistor is connected to the first end of the second resistor, the second end of the second resistor is grounded, and the second end of the first resistor is also respectively connected to the control end of the third transistor, the control end of the fourth transistor, the control end of the fifth transistor and the control end of the sixth transistor.

[0014] In this solution, the voltage division ratio is adjusted by adjusting the resistance value of the resistor, so that different voltage values ​​of the divided voltage can be formed.

[0015] In one embodiment, the voltage divider circuit also includes an operational amplifier; the second end of the first resistor is connected to the positive input end of the operational amplifier, the reverse input end of the operational amplifier is connected to the output end of the operational amplifier, and the output end of the operational amplifier is also connected to the control end of the third transistor, the control end of the fourth transistor, the control end of the fifth transistor and the control end of the sixth transistor respectively.

[0016] In this solution, the operational amplifier has a small internal resistance, and the driving capability of the operational amplifier can be used to drive the control end of the third transistor, the control end of the fourth transistor, the control end of the fifth transistor, and the control end of the sixth transistor, respectively, thereby facilitating rapid charging and discharging.

[0017] In one embodiment, the wide voltage switch further includes an enable generating circuit, the input end of the enable generating circuit is used to receive an enable input signal, and the output end of the enable generating circuit is respectively connected to the control end of the seventh transistor and the control end of the eighth transistor to provide complementary enable signals.

[0018] In this solution, the enable generation circuit provides a complementary enable signal to the level conversion circuit based on the enable input signal, thereby controlling the on and off of the level conversion circuit, thereby controlling whether to output voltage externally, and can reliably realize the on and off of the switch in a wide voltage range.

[0019] In one embodiment, the enable generating circuit includes a first inverter and a second inverter; the control end of the first inverter is used to input an enable input signal, and the output end of the first inverter is connected to the control end of the second inverter; the output end of the first inverter is also connected to the control end of the eighth transistor, and the output end of the second inverter is connected to the control end of the seventh transistor.

[0020] In this solution, the enable generation circuit uses two inverters connected in series to generate complementary enable signals for a single input enable input signal.

[0021] In one embodiment, the enable generating circuit further includes a buck module; the input end of the buck module is connected to the power supply voltage, and the output end of the buck module is respectively connected to the power supply end of the first inverter and the power supply end of the second inverter, for providing a low voltage less than the power supply voltage.

[0022] In this solution, the buck module can provide a low voltage lower than the power supply voltage, so that the inverter can use a low voltage domain device, and the input enable input signal can also be in the low voltage domain. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1A and Figure 1B A schematic diagram of the structure of an integrated circuit chip is shown respectively; Figure 2A schematic diagram of the structure of an integrated circuit chip according to an embodiment of the present invention is shown; Figure 3 A schematic diagram of functional modules of an integrated circuit chip according to an embodiment of the present invention is shown; Figure 4 A schematic structural diagram of a level conversion circuit in a wide voltage switch according to an embodiment of the present invention is shown; Figure 5A and Figure 5B The schematic diagrams of the structure of the voltage divider circuit in the wide voltage switch according to the embodiment of the present invention are shown respectively; Figure 6 A schematic structural diagram of an enable generating circuit in a wide voltage switch according to an embodiment of the present invention is shown; Figure 7 A schematic structural diagram of a wide voltage switch according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0024] In order to make the purpose and technical solution of the embodiment of the present invention clearer, the technical solution of the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiment of the present invention. Obviously, the described embodiment is a part of the embodiment of the present invention, not all of the embodiments. Based on the described embodiment of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] Figure 1A and Figure 1B The schematic diagrams of the structures of an integrated circuit chip are shown respectively.

[0026] like Figure 1A and Figure 1B As shown, the integrated circuit chip includes a chip power supply (VDD shown in the figure) and a chip core CORE, wherein the chip power supply is used to provide a power supply voltage VDD to the chip core CORE, and the chip core CORE can be a radio frequency circuit or an analog circuit, such as a detector, an attenuator, an amplifier, etc. In order to reduce power consumption, a switch is usually set between the chip power supply and the chip core CORE, and an enable input signal EN is provided to the switch to control the closing and opening of the switch. When the switch is closed, the chip power supply supplies power to the chip core CORE; when the switch is open, the chip power supply does not supply power to the chip core CORE, so as to shut down the chip core CORE when needed. As an example, the switch can be a MOS tube or a BJT tube, such as a PMOS tube (such as Figure 1A as shown) or PNP type BJT tube (as Figure 1B shown) etc.

[0027] The wide voltage scenario means that for the chip core CORE, the chip power supply can use different types of power supplies (such as dry batteries and lithium batteries, etc.) or different numbers of the same type of power supplies (such as two dry batteries or three dry batteries, etc.) for power supply, so that the power supply voltage VDD has multiple voltage domains, such as 1.2V, 1.8V, 2.5V, 2.7V, 3.0V, 3.3V and 5.0V, etc. There is a scenario: the chip can be powered by two dry batteries. At this time, the power supply voltage is 3V. As the dry battery power is consumed, the power supply voltage VDD will gradually decrease to 2.7V, providing 2.7V power supply for the chip core CORE, and the chip can still work normally at this time; the chip can also be powered by 3 dry batteries. At this time, the power supply voltage VDD is 4.5V, providing 4.5V power supply for the chip core CORE, and the chip can work normally; the chip can also be powered by lithium batteries. The voltage of lithium batteries generally ranges from 3.8 to 4.7V. In this scenario, in order to adapt to these voltage domains, a switch with a higher withstand voltage may be selected, such as a PMOS tube or a PNP-type BJT tube with a maximum withstand voltage of 5.5V. In some embodiments, the power supply voltage VDD is a wide voltage, which means that when the chip works normally, the power supply voltage VDD may have more than two voltage values, and the voltage difference between different voltage values ​​is usually greater than or equal to 1V, or at least one voltage value is more than 130% of another voltage value.

[0028] However, when selecting chip design processes, in order to balance speed and cost considerations, there are usually only two voltage domain devices. For example, for MOS tubes, the typical operating voltage is 1.2V and 2.5V; and for BJT tubes, the typical operating voltage is 1.5V and 3.3V. Therefore, devices with higher tolerance voltages will not be selected. At this time, neither the 2.5V MOS tube nor the 3.3V BJT tube can withstand the high power supply voltage VDD of 5.5V alone, and are not suitable for scenarios where the power supply voltage VDD is a wide voltage.

[0029] In addition, when a PNP-type BJT tube is used as a switch, when the PNP-type BJT tube is turned on, if the current is large, its base will also consume more current, thereby additionally increasing power consumption.

[0030] Therefore, a method is urgently needed to adapt to a wide range of power supply voltage VDD and to reliably realize the closing and opening of the switch between the chip power supply and the chip core CORE.

[0031] Figure 2 A schematic structural diagram of an integrated circuit chip according to an embodiment of the present invention is shown.

[0032] like Figure 2As shown, the integrated circuit chip sets a wide voltage switch SW between the chip power supply (not shown) and the chip core CORE, wherein the power supply voltage VDD provided by the chip power supply is a wide voltage, and an enable input signal EN is provided to the wide voltage switch SW to control the closing and opening of the wide voltage switch SW. When the wide voltage switch SW is closed, the chip power supply supplies power VOUT to the chip core CORE; when the wide voltage switch SW is opened, the chip power supply does not supply power to the chip core CORE.

[0033] The wide voltage switch SW can use low voltage domain devices, saving mask costs, and can ensure that the corresponding low voltage domain devices operate normally and avoid breakdown regardless of the power supply voltage VDD. The low voltage domain refers to the device whose operating voltage is lower than the maximum voltage value of the wide voltage. For example, a 2.5V device means that the device has an operating voltage of 2.5V and the maximum voltage tolerable is usually 2.75V. When a bias voltage below 2.75V is applied to it, the device can operate normally without breakdown; when the maximum voltage value of the wide voltage is 5.5V, the device cannot work normally.

[0034] Figure 3 A functional module schematic diagram of an integrated circuit chip according to an embodiment of the present invention is shown.

[0035] like Figure 3 As shown, the integrated circuit chip includes a chip power supply 100, a chip core 200 and a wide voltage switch 300. The chip power supply 100 is used to provide a power supply voltage VDD, and the wide voltage switch 300 is respectively connected to the chip power supply 100 and the chip core 200. When the wide voltage switch 300 is closed, the wide voltage switch 300 provides an output voltage VOUT (i.e., the power supply voltage VDD) to the chip core 200, and when the wide voltage switch 300 is opened, the wide voltage switch 300 does not output the power supply voltage VDD to the chip core 200.

[0036] Continue as Figure 3 As shown, in one embodiment, the wide voltage switch 300 includes a level conversion circuit 301 , which uses a low voltage domain device and controls whether to convert the input power supply voltage VDD to the output terminal to provide it to the chip core 200 based on an enable input signal EN.

[0037] Continue as Figure 3As shown, in one embodiment, the wide voltage switch 300 further includes a voltage divider circuit 302, which divides the power supply voltage VDD according to a certain ratio to generate a divided voltage VBS, the voltage value of which is less than the voltage value of the power supply voltage VDD and changes dynamically with the voltage value of the power supply voltage VDD. When the voltage value of the power supply voltage VDD is high, the voltage value of the divided voltage VBS is also high, and when the voltage value of the power supply voltage VDD is low, the voltage value of the divided voltage VBS is also low. The divided voltage VBS is provided to the level conversion circuit 301 as a bias voltage for the corresponding low voltage domain devices in the level conversion circuit 301, so as to ensure the closing and opening of these low voltage domain devices and prevent these low voltage domain devices from being broken down.

[0038] Continue as Figure 3 As shown, in one embodiment, the wide voltage switch 300 further includes an enable generation circuit 303, which receives an enable input signal EN outside the chip and provides corresponding enable signals ENn, ENp to control the closing and opening of corresponding low voltage domain devices in the level conversion circuit 301, thereby controlling whether to convert the input power supply voltage VDD to the output terminal. It can be understood that the corresponding enable signals ENn, ENp can also replace the enable input signal EN and be directly input from the outside of the wide voltage switch 300 to the level conversion circuit 301, so that the enable generation circuit 303 is omitted in the wide voltage switch 300, or the enable generation circuit 303 can also be independent of the wide voltage switch 300 and set outside the wide voltage switch 300.

[0039] Figure 4 A schematic structural diagram of a level conversion circuit in a wide voltage switch according to an embodiment of the present invention is shown.

[0040] like Figure 4 As shown, and reference Figure 3 The level conversion circuit 301 includes first to fourth transistors M1-M4 and fifth to eighth transistors M5-M8, wherein the first to fourth transistors M1-M4 are first type transistors and the fifth to eighth transistors M5-M8 are second type transistors.

[0041] The first end of the first transistor M1 and the first end of the second transistor M2 are both connected to the power supply voltage VDD, the control end of the first transistor M1 is connected to the second end of the second transistor M2, the control end of the second transistor M2 is connected to the second end of the first transistor M1, and the second end of the first transistor M1 and the second end of the second transistor M2 are also connected to the first end of the third transistor M3 and the first end of the fourth transistor M4, respectively.

[0042] The second end of the third transistor M3 and the second end of the fourth transistor M4 are connected to the second end of the fifth transistor M5 and the second end of the sixth transistor M6, respectively. The first end of the fifth transistor M5 and the first end of the sixth transistor M6 are connected to the second end of the seventh transistor M7 and the second end of the eighth transistor M8, respectively.

[0043] The first end of the seventh transistor M7 and the first end of the eighth transistor M8 are both grounded, and the second end of the fourth transistor M4 is connected to the second end of the sixth transistor M6 to provide an output voltage VOUT.

[0044] In one embodiment, the first type transistors are all PMOS transistors, the second type transistors are all NMOS transistors, and the first terminals of the first type transistors and the second type transistors are all sources, the second terminals are all drains, and the control terminals are all gates. In another embodiment, the first type transistors are all PNP-type BJT transistors, the second type transistors are all NPN-type BJT transistors, and the first terminals of the first type transistors and the second type transistors are all emitters, the second terminals are all collectors, and the control terminals are all bases. It can be understood that compared to the BJT tube, the MOS tube consumes less current at its gate when it is turned on, so that it does not increase power consumption.

[0045] Continue as Figure 4 As shown, and reference Figure 3 The control end of the third transistor M3 , the control end of the fourth transistor M4 , the control end of the fifth transistor M5 and the control end of the sixth transistor M6 are all provided with a divided voltage VBS (also referred to as a bias voltage VBS), which is generated by the voltage divider circuit 302 .

[0046] The voltage value of the divided voltage VBS is less than the voltage value of the power supply voltage VDD and changes dynamically with the voltage value of the power supply voltage VDD. And the voltage value of the divided voltage VBS Satisfies the following formula (1): (1) In formula (1), is the voltage value of the power supply voltage VDD, is the voltage value of the divided voltage VBS, is the absolute value of the threshold voltage VTH1 of the first type transistor. When the type of the first type transistor is determined, the absolute value of its threshold voltage VTH1 It is also determined that, at this time, when the voltage value of the power supply voltage VDD When the voltage of the divided voltage VBS is higher, It can also be higher, and when the voltage value of the power supply voltage VDD When the voltage of the divided voltage VBS is lower, It can also be lower.

[0047] In one embodiment, the voltage value of the divided voltage VBS is The voltage value of the power supply voltage VDD As an example, the voltage value of the divided voltage VBS is The voltage value of the power supply voltage VDD half of the voltage With voltage value Dynamic linear changes.

[0048] As a typical power supply range of an integrated circuit chip, in one embodiment, the voltage value of the power supply voltage VDD is In the range of 2.7V to 5.5V, the first type transistor can adopt a low voltage domain device, such as a device whose operating voltage is 2.5V and whose threshold voltage VTH1 has an absolute value of For example, when the voltage value of the power supply voltage VDD is When the voltage of the divided voltage VBS is 5.5V, The voltage is 2.75V. and voltage value Satisfies equation (1). For another example, when the voltage value of the power supply voltage VDD is When the voltage of the divided voltage VBS is 2.7V, The voltage value is 1.35V. and voltage value It also satisfies equation (1). It can be understood that in order to leave a margin, the voltage value of the divided voltage VBS is The voltage value can be higher than the power supply voltage VDD Half of is smaller, as long as formula (1) is satisfied.

[0049] When the operating voltage of the first type transistor is 2.5V, the operating voltage of the second type transistor can also be 2.5V, so that low voltage domain devices can be uniformly adopted and mask costs can be saved.

[0050] Continue as Figure 4 As shown, and reference Figure 3 The control end of the eighth transistor M8 and the control end of the seventh transistor M7 are respectively provided with a first enable signal ENn and a second enable signal ENp, which are generated by the enable generation circuit 303 or directly input from the outside of the wide voltage switch 300.

[0051] The first enable signal ENn and the second enable signal ENp are complementary enable signals, wherein the complementary enable signals have opposite states to the two enable signals, and when the first enable signal ENn is at a high level, the second enable signal ENp is at a low level, and when the first enable signal ENn is at a low level, the second enable signal ENp is at a high level, thereby ensuring that the switch states of the eighth transistor M8 and the seventh transistor M7 are opposite. In the case where the first enable signal ENn and the second enable signal ENp are generated by the enable generation circuit 303, the enable generation circuit 303 receives the enable input signal EN, and provides the first enable signal ENn and the second enable signal ENp to the control terminal of the eighth transistor M8 and the control terminal of the seventh transistor M7, respectively, wherein the level of the first enable signal ENn is opposite to the level of the enable input signal EN, and the level of the second enable signal ENp is opposite to the level of the first enable signal ENn and the same as the level of the enable input signal EN.

[0052] As an example, the high levels of the first enable signal ENn and the second enable signal ENp are both 2.5V, so as to match the operating voltages of the first type transistors and the second type transistors.

[0053] Combine the following Figures 2 to 4 , the working principle of the integrated circuit chip and the wide voltage switch thereof according to the embodiment of the present invention is described. For the convenience of description, the first type transistors are all PMOS tubes, the second type transistors are all NMOS tubes, and the first ends of the first type transistors and the second type transistors are all sources, the second ends are all drains, and the control ends are all gates. However, it can be understood that the first type transistors are all PNP type BJT tubes, the second type transistors are all NPN type BJT tubes, and the first ends of the first type transistors and the second type transistors are all emitters, the second ends are all collectors, and the control ends are all bases. The situation is similar and will not be repeated here.

[0054] Assume that the absolute value of the threshold voltage VTH1 of the PMOS tube is Both are 0.6V.

[0055] 1. In the first case, the power supply voltage VDD is a high voltage, and its voltage value For example, 5.5V.

[0056] The voltage divider circuit 302 provides a divided voltage VBS to the gate of the third transistor M3, the gate of the fourth transistor M4, the gate of the fifth transistor M5, and the gate of the sixth transistor M6, respectively. The voltage value is Satisfies the formula (1), for example, 2.75V.

[0057] The enable generation circuit 303 receives the enable input signal EN, and provides a first enable signal ENn and a second enable signal ENp to the gate of the eighth transistor M8 and the gate of the seventh transistor M7, respectively.

[0058] 1) When the enable input signal EN is at a high level, the first enable signal ENn is at a low level, and the second enable signal ENp is at a high level. At this time, the seventh transistor M7 is turned on and pulls the voltage at V5 down to 0V; as the voltage at V5 is pulled down, when the gate-source voltage Vgs of the fifth transistor M5 is greater than or equal to its threshold voltage, the fifth transistor M5 is turned on and pulls the voltage at V3 down to 0V; as the voltage at V3 is pulled down, when the gate-source voltage Vgs of the third transistor M3 is less than or equal to its threshold voltage, the third transistor M3 is turned on and pulls the voltage at V1 down.

[0059] As the voltage at V1 is pulled down to 3.35V, which is equal to the gate voltage of the third transistor M3 (i.e., the divided voltage VBS of 2.75V) plus the threshold voltage VTH1 of the third transistor M3 (i.e., 0.6V), the third transistor M3 is turned off. At this time, the gate voltage of the second transistor M2 is equal to the voltage at V1, i.e., 3.35V.

[0060] Since the 5.5V power supply voltage VDD is greater than the 3.35V gate voltage of the second transistor M2 plus the threshold voltage VTH1 (ie, 0.6V) of the second transistor M2, that is, , so the second transistor M2 is turned on and pulls the voltage at V2 up to the power supply voltage VDD.

[0061] As the voltage at V2 is pulled up, when the gate-source voltage Vgs of the fourth transistor M4 is less than or equal to its threshold voltage, the fourth transistor M4 is turned on and the voltage at V4 is pulled up to the power supply voltage VDD, and the voltage at V4 is provided as the output voltage VOUT. Figure 2 As shown, the wide voltage switch SW is closed, and the chip power supply provides the power supply voltage VDD to the chip core CORE for power supply.

[0062] 2) When the enable input signal EN is at a low level, the first enable signal ENn is at a high level, and the second enable signal ENp is at a low level. At this time, the eighth transistor M8 is turned on and pulls the voltage at V6 down to 0V; as the voltage at V6 is pulled down, when the gate-source voltage Vgs of the sixth transistor M6 is greater than or equal to its threshold voltage, the sixth transistor M6 is turned on and pulls the voltage at V4 down to 0V as the output voltage VOUT to be provided externally. At this time, as Figure 2 As shown, the wide voltage switch SW is disconnected, and the chip power supply does not supply power to the chip core CORE.

[0063] As the voltage at V4 is pulled down, when the gate-source voltage Vgs of the fourth transistor M4 is less than or equal to its threshold voltage, the fourth transistor M4 is turned on and the voltage at V2 is pulled down. As the voltage at V2 is pulled down to 3.35V, which is equal to the gate voltage of the fourth transistor M4 (i.e., the divided voltage VBS of 2.75V) plus the threshold voltage VTH1 of the fourth transistor M4 (i.e., 0.6V), the fourth transistor M4 is turned off. At this time, the gate voltage of the first transistor M1 is equal to the voltage at V1, i.e., 3.35V.

[0064] Since the 5.5V power supply voltage VDD is greater than the 3.35V gate voltage of the first transistor M1 plus the threshold voltage VTH1 (ie, 0.6V) of the first transistor M1, , so the first transistor M1 is turned on and pulls the voltage at V1 up to the power supply voltage VDD.

[0065] 2. In the second case, the power supply voltage VDD is a low voltage, and its voltage value For example, 2.7V.

[0066] The voltage divider circuit 302 provides a divided voltage VBS to the gate of the third transistor M3, the gate of the fourth transistor M4, the gate of the fifth transistor M5, and the gate of the sixth transistor M6, respectively. The voltage value is The voltage satisfies the equation (1), for example, 1.35 V.

[0067] The enable generation circuit 303 receives the enable input signal EN, and provides a first enable signal ENn and a second enable signal ENp to the gate of the eighth transistor M8 and the gate of the seventh transistor M7, respectively.

[0068] 1) When the enable input signal EN is at a high level, the first enable signal ENn is at a low level, and the second enable signal ENp is at a high level. At this time, the seventh transistor M7 is turned on and pulls the voltage at V5 down to 0V; as the voltage at V5 is pulled down, when the gate-source voltage Vgs of the fifth transistor M5 is greater than or equal to its threshold voltage, the fifth transistor M5 is turned on and pulls the voltage at V3 down to 0V; as the voltage at V3 is pulled down, when the gate-source voltage Vgs of the third transistor M3 is less than or equal to its threshold voltage, the third transistor M3 is turned on and pulls the voltage at V1 down.

[0069] As the voltage at V1 is pulled down to 1.95V, which is equal to the gate voltage of the third transistor M3 (i.e., the divided voltage VBS of 1.35V) plus the threshold voltage VTH1 of the third transistor M3 (i.e., 0.6V), the third transistor M3 is turned off. At this time, the gate voltage of the second transistor M2 is equal to the voltage at V1, i.e., 1.95V.

[0070] Since the 2.7V power supply voltage VDD is greater than the 1.95V gate voltage of the second transistor M2 plus the threshold voltage VTH1 (ie, 0.6V) of the second transistor M2, that is, , so the second transistor M2 is turned on and pulls the voltage at V2 up to the power supply voltage VDD.

[0071] As the voltage at V2 is pulled up, when the gate-source voltage Vgs of the fourth transistor M4 is less than or equal to its threshold voltage, the fourth transistor M4 is turned on and the voltage at V4 is pulled up to the power supply voltage VDD, and the voltage at V4 is provided as the output voltage VOUT. Figure 2 As shown, the wide voltage switch SW is closed, and the chip power supply provides the power supply voltage VDD to the chip core CORE for power supply.

[0072] 2) When the enable input signal EN is at a low level, the first enable signal ENn is at a high level, and the second enable signal ENp is at a low level. At this time, the eighth transistor M8 is turned on and pulls the voltage at V6 down to 0V; as the voltage at V6 is pulled down, when the gate-source voltage Vgs of the sixth transistor M6 is greater than or equal to its threshold voltage, the sixth transistor M6 is turned on and pulls the voltage at V4 down to 0V as the output voltage VOUT to be provided externally. At this time, as Figure 2 As shown, the wide voltage switch SW is disconnected, and the chip power supply does not supply power to the chip core CORE.

[0073] As the voltage at V4 is pulled down, when the gate-source voltage Vgs of the fourth transistor M4 is less than or equal to its threshold voltage, the fourth transistor M4 is turned on and the voltage at V2 is pulled down. As the voltage at V2 is pulled down to 1.95V, which is equal to the gate voltage of the fourth transistor M4 (i.e., the divided voltage VBS of 2.75V) plus the threshold voltage VTH1 of the fourth transistor M4 (i.e., 0.6V), the fourth transistor M4 is turned off. At this time, the gate voltage of the first transistor M1 is equal to the voltage at V1, i.e., 1.95V.

[0074] Since the power supply voltage VDD of 2.75V is greater than the gate voltage of the first transistor M1 of 1.95V plus the threshold voltage VTH1 of the first transistor M1 (ie, 0.6V), , so the first transistor M1 is turned on and pulls the voltage at V1 up to the power supply voltage VDD.

[0075] It can be seen from the first and second situations mentioned above that by reasonably setting the relationship between the divided voltage VBS and the power supply voltage VDD, regardless of the level of the power supply voltage VDD, the wide voltage switch SW can be reliably turned on and off, and the level conversion circuit 301 can uniformly adopt low-voltage domain devices (for example, 2.5V devices). The source-drain voltage of each low-voltage domain device (each transistor) is less than the breakdown voltage (for example, the breakdown voltage is 2.75V), and can withstand the divided voltage VBS as a bias voltage, and save mask costs.

[0076] Figure 5A and Figure 5B The schematic diagrams of the structures of the voltage divider circuit in the wide voltage switch according to the embodiments of the present invention are shown respectively.

[0077] like Figure 5A and Figure 5B As shown, the input end of the voltage divider circuit 302 is connected to the power supply voltage VDD, and the output end of the voltage divider circuit 302 is respectively connected to the control end of the third transistor M3, the control end of the fourth transistor M4, the control end of the fifth transistor M5 and the control end of the sixth transistor M6, for providing a divided voltage VBS that changes with the power supply voltage VDD.

[0078] like Figure 5A As shown, in one embodiment, the voltage divider circuit 302 includes a first resistor R1 and a second resistor R2. The first end of the first resistor R1 is connected to the power supply voltage VDD, the second end of the first resistor R1 is connected to the first end of the second resistor R2, the second end of the second resistor R2 is grounded, and the second end of the first resistor R1 is also connected to Figure 4 The control end of the third transistor M3, the control end of the fourth transistor M4, the control end of the fifth transistor M5 and the control end of the sixth transistor M6 are connected.

[0079] The voltage divider circuit 302 divides the power supply voltage VDD through the first resistor R1 and the second resistor R2. At this time, the voltage value of the divided voltage VBS is Satisfies the following formula (2): (2) in, is the resistance value of the first resistor R1, is the resistance value of the second resistor R2, is the voltage value of the power supply voltage VDD, is the voltage value of the divided voltage VBS.

[0080] Substituting equation (2) into equation (1), the resistance of the first resistor R1 is and the resistance of the second resistor R2 Satisfies the following formula (3): (3) in, is the resistance value of the first resistor R1, is the resistance value of the second resistor R2, is the voltage value of the power supply voltage VDD, is the absolute value of the threshold voltage VTH1 of the first type transistor.

[0081] like Figure 5B As shown, compared to Figure 5A In one embodiment, the voltage divider circuit 302 further includes an operational amplifier OPA. The second end of the first resistor R1 is connected to the positive input end of the operational amplifier OPA, the negative input end of the operational amplifier OPA is connected to the output end of the operational amplifier OPA, and the output end of the operational amplifier OPA is also connected to Figure 4 The control end of the third transistor M3, the control end of the fourth transistor M4, the control end of the fifth transistor M5 and the control end of the sixth transistor M6 are connected.

[0082] In order to make the on-resistance of each transistor small and the power consumption low, the resistance of the first resistor R1 and the second resistor R2 are usually designed to be large, so that the time constant formed by them and the third transistor M3, the fourth transistor M4, the fifth transistor M5 and the sixth transistor M6 is also large, which is not conducive to the stability of the divided voltage VBS. The time constant is the response speed of the switching state of the transistor. Figure 5B In the embodiment, the operational amplifier OPA can isolate the first resistor R1 and the second resistor R2 from the third transistor M3, the fourth transistor M4, the fifth transistor M5 and the sixth transistor M6, and the operational amplifier OPA is connected in a negative feedback form, which can form a small internal resistance (internal resistance can be understood as internal resistance) and has a strong driving capability. By utilizing the driving capability of the operational amplifier OPA, the control end of the third transistor M3, the control end of the fourth transistor M4, the control end of the fifth transistor M5 and the control end of the sixth transistor M6 can be driven respectively, and the time constant of the voltage division voltage VBS voltage stabilization is small, thereby facilitating rapid charging and discharging.

[0083] Figure 6 A schematic structural diagram of an enable generating circuit in a wide voltage switch according to an embodiment of the present invention is shown.

[0084] like Figure 6 As shown, the input end of the enable generating circuit 303 is used to receive the enable input signal EN, and the output end of the enable generating circuit is respectively connected to Figure 4 The control end of the seventh transistor M7 and the control end of the eighth transistor M8 are connected to provide complementary enable signals ENp, ENn.

[0085] Continue as Figure 6 As shown, and reference Figure 2In one embodiment, the enable generation circuit 303 includes a first inverter INV1 and a second inverter INV2. The control terminal of the first inverter INV1 is used to input an enable input signal EN, which can be input from the outside of the wide voltage switch 300. The output terminal of the first inverter INV1 is connected to the control terminal of the second inverter INV2. The output terminal of the first inverter INV1 is also connected to the control terminal of the second inverter INV2. Figure 4 The control terminal of the eighth transistor M8 in the embodiment is connected to the control terminal of the eighth transistor M8, and is used to provide a first enable signal ENn which is opposite to the level of the enable input signal EN. The output terminal of the second inverter INV2 is connected to the control terminal of the eighth transistor M8 in the embodiment. Figure 4 The control terminal of the seventh transistor M7 in the transistor ENn is connected to provide a second enable signal ENp having a level opposite to that of the first enable signal ENn, so that the first enable signal ENn and the second enable signal ENp form complementary enable signals.

[0086] Continue as Figure 6 As shown, in one embodiment, the enable generation circuit 303 further includes a voltage reduction module 3031. The input end of the voltage reduction module 3031 is connected to the power supply voltage VDD, and the output end of the voltage reduction module 3031 is respectively connected to the power supply end of the first inverter INV1 and the power supply end of the second inverter INV2, and is used to provide a low voltage less than the power supply voltage VDD, so that the voltage value of the enable signal ENn, ENp is reduced to the operating voltage of the low voltage domain device. For example, when the voltage value of the power supply voltage VDD is In the case of a range of 2.7V to 5.5V, the voltage value of the low voltage provided by the output terminal of the step-down module 3031 may be 2.5V, so that the first inverter INV1 and the second inverter INV2 may uniformly use low voltage domain devices (e.g., 2.5V devices). Because each inverter has a certain output current capability, compared with the enable input signal EN, the enable signals ENn and ENp provided by the enable generation circuit 303 have a more optimized driving capability.

[0087] In one embodiment, the step-down module 3031 includes a low-dropout linear regulator LDO, while in another embodiment, the step-down module 3031 includes a voltage divider circuit, and a divided voltage is formed as a low voltage by adjusting the resistance ratio. Compared with the voltage divider circuit, the linear change of the low-dropout linear regulator is more stable, the anti-interference ability is stronger, and the output fluctuation and noise can be reduced.

[0088] Figure 7 A schematic structural diagram of a wide voltage switch according to an embodiment of the present invention is shown.

[0089] like Figure 7 As shown, and reference Figures 4 to 6In one embodiment, the wide voltage switch 300 includes a level conversion circuit 301 , a voltage division circuit 302 , and an enable generation circuit 303 .

[0090] The level conversion circuit 301 includes first to fourth transistors M1-M4 and first to eighth transistors M5-M8. The source of the first transistor M1 and the source of the second transistor M2 are both connected to the power supply voltage VDD, the gate of the first transistor M1 is connected to the drain of the second transistor M2, the gate of the second transistor M2 is connected to the drain of the first transistor M1, and the drain of the first transistor M1 and the drain of the second transistor M2 are also connected to the source of the third transistor M3 and the source of the fourth transistor M4 respectively. The drain of the third transistor M3 and the drain of the fourth transistor M4 are respectively connected to the drain of the fifth transistor M5 and the drain of the sixth transistor M6, and the source of the fifth transistor M5 and the source of the sixth transistor M6 are respectively connected to the drain of the seventh transistor M7 and the drain of the eighth transistor M8. The source of the seventh transistor M7 and the source of the eighth transistor M8 are both grounded, and the drain of the fourth transistor M4 is connected to the drain of the sixth transistor M6 to provide the output voltage VOUT.

[0091] The voltage divider circuit 302 includes a first resistor R1, a second resistor R2 and an operational amplifier OPA. The second end of the first resistor R1 is connected to the positive input end of the operational amplifier OPA, the negative input end of the operational amplifier OPA is connected to the output end of the operational amplifier OPA, and the output end of the operational amplifier OPA is also connected to the gate of the third transistor M3, the gate of the fourth transistor M4, the gate of the fifth transistor M5 and the gate of the sixth transistor M6, respectively, for providing a voltage divider voltage VBS that satisfies (1).

[0092] The enable generation circuit 303 includes a low voltage dropout linear regulator LDO, a first inverter INV1 and a second inverter INV2. The first end of the low voltage dropout linear regulator LDO is connected to the power supply voltage VDD, the second end of the low voltage dropout linear regulator LDO is grounded, and the output end of the low voltage dropout linear regulator LDO is respectively connected to the power supply end of the first inverter INV1 and the power supply end of the second inverter INV2. The control end of the first inverter INV1 is used to input the enable input signal EN, the output end of the first inverter INV1 is connected to the control end of the second inverter INV2, the output end of the first inverter INV1 is also connected to the control end of the eighth transistor M8, and is used to provide a first enable signal ENn with a level opposite to the enable input signal EN, and the output end of the second inverter INV2 is connected to the control end of the seventh transistor M7, and is used to provide a second enable signal ENp with a level opposite to the first enable signal ENn.

[0093] It should be noted that in the claims and description of this patent, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "including one" do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0094] While the present invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.

Claims

1. A wide voltage switch, characterized in that: The wide voltage switch comprises: A level conversion circuit, the level conversion circuit comprising first to eighth transistors, the first to fourth transistors are first type transistors, the fifth to eighth transistors are second type transistors, each transistor comprises a control terminal, a first terminal, and a second terminal; the first terminal of the first transistor and the first terminal of the second transistor are both connected to a power supply voltage, the control terminal of the first transistor is connected to the second terminal of the second transistor, the control terminal of the second transistor is connected to the second terminal of the first transistor, the second terminal of the first transistor and the second terminal of the second transistor are also respectively connected to the first terminal of the third transistor and the first terminal of the fourth transistor, the second terminal of the third transistor and the second terminal of the fourth transistor are respectively connected to the second terminal of the fifth transistor and the second terminal of the sixth transistor, the first terminal of the fifth transistor and the first terminal of the sixth transistor are respectively connected to the second terminal of the seventh transistor and the second terminal of the eighth transistor, the first terminal of the seventh transistor and the first terminal of the eighth transistor are both grounded; the control terminal of the seventh transistor and the control terminal of the eighth transistor respectively receive complementary enable signals; the second terminal of the fourth transistor is connected to the second terminal of the sixth transistor for providing an output voltage; A voltage divider circuit is used to divide the power supply voltage, the input end of the voltage divider circuit is connected to the power supply voltage, the output end of the voltage divider circuit is respectively connected to the control end of the third transistor, the control end of the fourth transistor, the control end of the fifth transistor and the control end of the sixth transistor, and the output end of the voltage divider circuit outputs a divided voltage that follows the power supply voltage.

2. The wide voltage switch according to claim 1, characterized in that: The voltage value of the power supply voltage and the voltage value of the divided voltage satisfy the following formula: ， in, is the voltage value of the power supply voltage, is the voltage value of the divided voltage, is the absolute value of the threshold voltage of the first type transistor.

3. The wide voltage switch according to claim 2, characterized in that: The voltage divider circuit includes a first resistor and a second resistor; the first end of the first resistor is connected to the power supply voltage, the second end of the first resistor is connected to the first end of the second resistor, the second end of the second resistor is grounded, and the second end of the first resistor is also respectively connected to the control end of the third transistor, the control end of the fourth transistor, the control end of the fifth transistor and the control end of the sixth transistor.

4. The wide voltage switch according to claim 3, characterized in that: The resistance value of the first resistor and the resistance value of the second resistor satisfy the following formula: ， in, is the resistance value of the first resistor, is the resistance value of the second resistor, is the voltage value of the power supply voltage, is the absolute value of the threshold voltage of the transistor of that type.

5. The wide voltage switch according to claim 3 or 4, characterized in that: The voltage divider circuit also includes an operational amplifier; the second end of the first resistor is connected to the positive input end of the operational amplifier, the reverse input end of the operational amplifier is connected to the output end of the operational amplifier, and the output end of the operational amplifier is also respectively connected to the control end of the third transistor, the control end of the fourth transistor, the control end of the fifth transistor and the control end of the sixth transistor.

6. The wide voltage switch according to claim 5, characterized in that: The wide voltage switch further comprises: An enable generating circuit, wherein the input end of the enable generating circuit is used to receive an external enable input signal, and the output end of the enable generating circuit is respectively connected to the control end of the seventh transistor and the control end of the eighth transistor to provide complementary enable signals.

7. The wide voltage switch according to claim 6, characterized in that: The enable generating circuit includes a first inverter and a second inverter; the control end of the first inverter is used to input the enable input signal, and the output end of the first inverter is connected to the control end of the second inverter; the output end of the first inverter is also connected to the control end of the eighth transistor, and the output end of the second inverter is connected to the control end of the seventh transistor.

8. The wide voltage switch according to claim 7, characterized in that: The enable generation circuit further includes a step-down module; an input end of the step-down module is connected to the power supply voltage, and an output end of the step-down module is respectively connected to a power supply end of the first inverter and a power supply end of the second inverter.

9. The wide voltage switch according to claim 8, characterized in that: The power supply voltage has a voltage value in the range of 2.7V to 5.5V.

10. The wide voltage switch according to claim 9, characterized in that: The operating voltage of the first type transistor is 2.5V.

11. The wide voltage switch according to claim 9, characterized in that: The voltage value of the low voltage provided by the output end of the step-down module is 2.5V.

12. The wide voltage switch according to claim 11, characterized in that: The step-down module includes a low voltage drop linear regulator or a voltage divider circuit.

13. The wide voltage switch according to claim 11 or 12, characterized in that: The operating voltage of the first inverter and the second inverter is 2.5V.

14. An integrated circuit chip, characterized in that: include: Chip power supply, used to provide power supply voltage; Chip core; The wide voltage switch according to any one of claims 1 to 13, wherein the wide voltage switch is connected to the chip power supply and the chip core respectively; When the wide voltage switch is closed, the wide voltage switch outputs the power supply voltage to the chip core, and when the wide voltage switch is opened, the wide voltage switch does not output the power supply voltage to the chip core.

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