An apparatus for inductive heat treatment of dielectric materials

Abstract

The application relates to the technical field of heat treatment devices, and discloses a device for inductively heat treating dielectric materials, which is composed of a device main machine, a temperature control system, a speed control system, an inductive heating device, a sample running system, a graphite conveying belt, a sample storage device, a temperature detection device, a cooling system, a vacuum cavity, an air valve and a mechanical pump. The device main machine is connected with the temperature control system and the speed control system, controls the inductive heating device and the sample running system, and adjusts target temperature, heating rate and heating time. The dielectric sample is indirectly heated by the heated graphite conveying belt. The sample running system is connected with the cooling system, and is communicatively connected with the temperature control system, so that the cooling speed and time can be controlled by controlling the sample running speed and the refrigerant flow according to needs. The vacuum cavity is connected with the air valve and the mechanical pump, and is communicatively connected with a central controller to control air pressure and the like. The application can control the extremely fast temperature rising and falling during the heat treatment of the dielectric materials, can adjust the atmosphere and air pressure, can deeply study the crystallization behavior of the dielectric materials under the extremely fast temperature rising and falling, and can prepare dielectric materials with better quality.

Description

Technical Field

[0001] The present invention belongs to the technical field of heat treatment devices, and in particular relates to a device for performing induction heat treatment on dielectric materials. Background Art

[0002] Induction heating utilizes the principle of electromagnetic induction to generate an alternating magnetic field around a workpiece, which in turn creates eddy currents within the workpiece. Compared to traditional heating, induction heating offers advantages such as faster heating rates, higher thermal efficiency, longer lifespan, and greater safety and reliability. It is widely used in melting, heat treatment, and welding structural materials.

[0003] Currently, the heating methods for dielectric materials are mainly divided into two categories: traditional heating and non-traditional heating. Traditional heating is heating through resistance wire, usually using muffle furnaces and other means. This method usually leads to disadvantages such as slow heating rate, high heating temperature, long heating time, and uncontrollable cooling rate. Non-traditional heating currently includes microwave heating, laser heating, Joule heating and other methods. Compared with traditional heating, it has advantages such as fast heating rate, short heating time, and low heating stability. However, it is affected by factors such as complex equipment. Therefore, there is currently a lack of research on the mechanism of the influence of cooling rate on the structural properties of dielectric materials. The crystallization behavior and crystal state of dielectric materials are closely related to the heating and cooling rate, as well as the synergistic effect of heating and cooling. Therefore, in order to explore the effect of large heating and cooling rates on the crystallization behavior of materials and effectively control their performance, it is necessary to develop a new preparation platform to achieve extremely fast heating and cooling preparation of dielectric materials. Summary of the Invention

[0004] The purpose of the present invention is to solve the shortcomings of narrow temperature rise and fall rate space and weak synergy when heating and cooling dielectric materials, and provide a device for induction heat treatment of dielectric materials.

[0005] The present invention provides a device for performing induction heat treatment on dielectric materials. The device comprises a device host, a temperature control system, a speed control system, an induction heating device, a sample operation system, a graphite conveyor belt, a sample storage device, a temperature detection device, a cooling system, a vacuum chamber, a vent valve, and a mechanical pump.

[0006] The present invention provides a device for performing induction heat treatment on dielectric materials. The device main body is provided with a temperature control system and a speed control system; the device main body is communicatively connected with the temperature control system, the speed control system, and a vacuum chamber; the temperature control system is communicatively connected with an induction heating device, a temperature detection device, and a cooling system; the speed control system is connected with a sample operation system and is communicatively connected with the temperature detection device; the sample operation system is connected with a graphite conveyor belt; the graphite conveyor belt is connected with a sample storage device and a cooling system; and the vacuum chamber is connected with a vent valve and a mechanical pump.

[0007] Compared with the existing dielectric heating technology, the present application has the following advantages:

[0008] 1、The present application uses electromagnetic induction to heat the graphite conveyor belt, and indirectly heats the dielectric material, thereby realizing the rapid heating process of the dielectric material;

[0009] 2、After the heating of the dielectric material is completed, the cooling system is used to introduce liquid nitrogen, thereby realizing the rapid cooling process of the dielectric material;

[0010] 3、The present application realizes the rapid heating and cooling process, and takes into account that the quality of the dielectric material is closely related to the type, humidity or pressure of the gas, and that the service life of the graphite conveyor belt will be greatly shortened when heated in oxygen. Therefore, the heating device is in a vacuum cavity, and can provide a dry protective atmosphere or a vacuum atmosphere, thereby further improving the preparation quality of the dielectric material and effectively exploring the influence of the heating and cooling rate on the crystallization behavior of the dielectric material. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 Fig. 1 is a structural schematic diagram of the induction heat treatment device of the present application; wherein, device host 1, temperature control system 2, speed control system 3, induction heating device 4, sample running system 5, graphite conveyor belt 6, sample storage device 7, temperature detection device 8, cooling system 9, vacuum cavity 10, air valve 11, mechanical pump 12;

[0012] Figure 2 Fig. 2 is a system diagram of the induction heat treatment device of the present application;

[0013] Figure 3 Fig. 3 is the surface morphology of the lead zirconate thin film prepared by using the induction heat treatment;

[0014] Figure 4 Fig. 4 is the hysteresis loop of the lead zirconate thin film prepared by using the induction heat treatment;

[0015] Figure 5 Fig. 5 is the surface morphology of the lead zirconate thin film prepared by using the traditional rapid annealing;

[0016] Figure 6 Fig. 6 is the hysteresis loop of the lead zirconate thin film prepared by using the traditional rapid annealing. DETAILED DESCRIPTION

[0017] The present application will be further described in detail below in conjunction with the embodiments, but the embodiments of the present application are not limited thereto.

[0018] Example 1:

[0019] The present application will be described in detail below in conjunction with the drawings, such as Figure 1As shown, the device of the present application is composed of device host 1, temperature control system 2, speed control system 3, induction heating device 4, sample running system 5, graphite conveying belt 6, sample storage device 7, temperature detection device 8, cooling system 9, vacuum cavity 10, air valve 11, mechanical pump 12; device host 1 is internally provided with temperature control system 2 and speed control system 3.

[0020] In this embodiment: temperature control system 2 is connected with induction heating device 4, and temperature detection device 8 is connected with temperature control system 2; the power can be adjusted through device host 1 according to the set temperature parameters, and the target temperature and the temperature rising and falling rate are adjusted at the same time.

[0021] In this embodiment: speed control system 3 is connected with sample running system 5, and temperature detection device 8 is connected with speed control system 3; the rotating speed can be adjusted through device host 1 according to the set moving speed, so as to adjust the heating time of dielectric sample.

[0022] In this embodiment: graphite conveying belt 6 is connected with sample storage device 7; the graphite conveying belt 6 is heated by induction heating mode to indirectly heat the dielectric sample in the form of heat conduction.

[0023] In this embodiment: graphite conveying belt 6 is connected with cooling system 9, cooling system 9 is in communication connection with temperature control system 2, and is also in communication connection with device host 1; the cooling speed can be controlled as needed.

[0024] In this embodiment: vacuum cavity 10 is connected with air valve 11 and mechanical pump 12, and is in communication connection with device host 1; the air pressure, gas type and gas flow in vacuum cavity 10 can be automatically adjusted by device host 1 according to the set parameters.

[0025] Embodiment 2:

[0026] Step one: preparation of solution

[0027] Ethylene glycol methyl ether (2-MOE) is used as the solvent, lead acetate (Pb(CH3COO)2·3H2O) and zirconium n-propyl alcohol (Zr(OCH2CH2CH3)4) are used as solutes, and the atomic ratio of Pb:Zr is 1.1:1. The ethylene glycol methyl ether is added to the lead acetate at a concentration of 0.4M, and then constant temperature distillation is carried out at 120℃ for 2 hours. Subsequently, the solution is cooled to room temperature, and then zirconium n-propyl alcohol is added. The solution is stirred at room temperature for 2 hours. Finally, ethylene glycol methyl ether is added again to make up the loss of solvent caused by the distillation process, so that the concentration of the solution reaches 0.4M, and a light yellow transparent lead zirconate solution is obtained.

[0028] Step two: preparation of thin film material

[0029] (1) Pt(111) / Ti / SiO2 / Si substrate is used. The solution prepared in step one is suspended and dropped onto the substrate for spin coating;

[0030] (2) The rotation speed is 3000 rpm, and the time is 30 seconds, to obtain the raw film;

[0031] (3) The raw film is dried at 450°C for 5 minutes to remove moisture and thermally decompose the organic matter, to obtain an amorphous film, and the above process is repeated 4 times to achieve the desired thickness;

[0032] (4) The amorphous film is heated to 650°C at a heating rate of 500°C / s using the device, and then held for 10 seconds, and the film is rapidly cooled by passing liquid nitrogen through the cooling system, to obtain the desired lead zirconate film material. The thickness of the film material is about 300 nanometers, and the microstructure and electrical properties of the final film are shown in Figure 3 and Figure 4 .

[0033] Comparative Example 1:

[0034] Step 1: Preparation of the solution

[0035] Ethylene glycol methyl ether (2-MOE) is used as the solvent. Lead acetate (Pb(CH3COO)2·3H2O) and zirconium n-propyl alcohol (Zr(OCH2CH2CH3)4) are used as solutes, and the atomic ratio of Pb:Zr is 1.1:1. Ethylene glycol methyl ether is added to lead acetate at a concentration of 0.4M, and then distilled at 120°C for 2 hours. After cooling to room temperature, zirconium n-propyl alcohol is added, and then stirred at room temperature for 2 hours. Finally, ethylene glycol methyl ether is added again to make up for the loss of solvent during the distillation process, so that the solution concentration reaches 0.4M, to obtain a light yellow transparent solution;

[0036] Step 2: Preparation of the film material

[0037] (1) Pt(111) / Ti / SiO2 / Si substrate is used. The solution prepared in step 1 is suspended and dropped onto the substrate for spin coating;

[0038] (2) The rotation speed is 3000 rpm, and the time is 30 seconds, to obtain the raw film;

[0039] (3) The raw film is dried at 450°C for 5 minutes to remove moisture and thermally decompose the organic matter, to obtain an amorphous film, and the above process is repeated 4 times to achieve the desired thickness;

[0040] (4) The amorphous film is placed in a rapid annealing furnace and annealed at 650°C for 3 minutes, to obtain the desired lead zirconate film material. The thickness of the film material is about 300 nanometers, and the microstructure and electrical properties of the final film are shown in Figure 5 and Figure 6 .

[0041] Matters not covered by this invention are known in the art. The above embodiments are intended only to illustrate the technical concepts and features of this invention. Their purpose is to enable those skilled in the art to understand the contents of this invention and implement them accordingly. They are not intended to limit the scope of protection of this invention. Any equivalent changes or modifications made in accordance with the spirit and essence of this invention are intended to be covered by the scope of protection of this invention.

Claims

1. A device for induction heat treatment of dielectric materials, characterized in that: The device is composed of a device host (1), a temperature control system (2), a speed control system (3), an induction heating device (4), a sample operation system (5), a graphite conveyor belt (6), a sample storage device (7), a temperature detection device (8), a cooling system (9), a vacuum chamber (10), a vent valve (11), and a mechanical pump (12); The device main unit (1) is internally provided with a temperature control system (2) and a speed control system (3); The device host (1) is communicatively connected with the temperature control system (2), the speed control system (3), and the vacuum chamber (10); The temperature control system (2) is communicatively connected to the induction heating device (4), the temperature detection device (8), and the cooling system (9); The speed control system (3) is connected to the sample operation system (5) and is in communication with the temperature detection device (8); The sample transport system (5) is connected to the graphite conveyor belt (6); The graphite conveyor belt (6) is connected to the sample storage device (7) and the cooling system (9); The vacuum chamber (10) is connected to a vent valve (11) and a mechanical pump (12); Liquid nitrogen is introduced into the cooling system to rapidly cool the film, thereby obtaining the desired lead zirconate film material.

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