Silicon wafer cleaning method, device, electronic equipment and storage medium

Abstract

The embodiment of the present application provides a silicon wafer cleaning method, device, electronic device and storage medium, the method comprising: determining the target pH value corresponding to the target reagent tank or the silicon wafer cleaning time within a preset time period in the future based on the numerical relationship between the actual pH value and the preset pH range, whether there is an indicator of the risk level of the contaminated wafer or the risk of oxidized wafer, the theoretical pH value, the actual cleaning amount of the silicon wafer and the theoretical cleaning amount of the silicon wafer; adding a reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continuing to clean the silicon wafer; or making the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time. The present application can avoid the problem of oxidized wafers when the silicon wafer surface is too clean and contaminated wafers when it is too dirty, thereby reducing the production cost of silicon wafers and improving production efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon wafer processing, and in particular to a silicon wafer cleaning method, device, electronic equipment and storage medium. Background Art

[0002] The silicon wafer processing process involves slicing, inserting, cleaning, drying, and sorting. The wafer cleaning machine operates as follows: the inserting machine loads the sliced wafers into a basket. The basket then enters a reagent tank, where chemical etching begins. After cleaning, the wafers enter multiple pure water tanks, where a combination of pure water and ultrasonic waves removes residual metal ions, organic matter, and other solid particles. The alkaline agent in the reagent tanks is added according to process parameters, which are revised and verified based on theoretical values.

[0003] However, when the surface of a batch of silicon wafers is too clean, oxide flakes will appear, and when the surface of a batch of silicon wafers is too dirty, dirty flakes will appear, which will increase the production cost of silicon wafers and reduce production efficiency. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a silicon wafer cleaning method, device, electronic device and storage medium, which can avoid the problem of oxide wafers when the silicon wafer surface is too clean and dirty wafers when it is too dirty, thereby reducing the production cost of silicon wafers and improving production efficiency.

[0005] In a first aspect, an embodiment of the present application provides a method for cleaning a silicon wafer, the method comprising:

[0006] Obtain the current contaminated wafer risk level or whether there is an oxidation wafer risk indicator corresponding to the target reagent tank, the actual silicon wafer cleaning volume, the theoretical silicon wafer cleaning volume, and the actual and theoretical pH values of the reagent solution in the target reagent tank;

[0007] Determine the target pH value for the target reagent tank or the wafer cleaning time within a preset time period based on the numerical relationship between the actual pH value and the preset pH range, whether there is an indicator for the wafer contamination risk level or wafer oxidation risk, the theoretical pH value, the actual wafer cleaning volume, and the theoretical wafer cleaning volume.

[0008] Add the reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continue to clean the silicon wafer; or make the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

[0009] In a possible implementation, the following steps are performed to determine whether there is an indicator for the current contaminated tablet risk level and oxidized tablet risk corresponding to the target reagent tank:

[0010] Obtain the current silicon wafer cleaning quality corresponding to the target reagent tank and the number of silicon wafers whose cleaning quality is continuously abnormally high and whose surface color brightness is greater than a preset standard color brightness;

[0011] If the number of silicon wafers is greater than the preset number of silicon wafers, then the presence of an oxidation risk indicator is determined as an oxidation risk corresponding indicator;

[0012] If the number of silicon wafers is less than the preset number of silicon wafers, the mark of whether there is oxidation risk will be determined as the mark corresponding to no oxidation risk; and based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning volume and the theoretical silicon wafer cleaning volume, and the silicon wafer cleaning quality, the current contaminated wafer risk level corresponding to the target reagent tank is determined.

[0013] In one possible implementation, determining the current contaminated wafer risk level corresponding to the target reagent tank based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality includes:

[0014] If the actual pH value is less than the theoretical pH value, the actual silicon wafer cleaning volume is less than the theoretical silicon wafer cleaning volume, and the silicon wafer cleaning quality is high, then the reagent solution in the target reagent tank is stirred; if the pH value of the stirred reagent solution is less than the theoretical pH value, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk.

[0015] In one possible implementation, determining the current contaminated wafer risk level corresponding to the target reagent tank based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality includes:

[0016] If the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer;

[0017] If the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual silicon wafer cleaning volume to the theoretical silicon wafer cleaning volume, the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk;

[0018] If the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual silicon wafer cleaning volume to the theoretical silicon wafer cleaning volume, the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0019] In one possible implementation, determining the current contaminated wafer risk level corresponding to the target reagent tank based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality includes:

[0020] If the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is high, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer;

[0021] If the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual silicon wafer cleaning volume to the theoretical silicon wafer cleaning volume, the current contaminated wafer risk level corresponding to the target reagent tank is high contaminated wafer risk;

[0022] If the ratio of the actual pH value to the theoretical pH value is less than or equal to the ratio of the actual silicon wafer cleaning volume to the theoretical silicon wafer cleaning volume, the current contaminated wafer risk level corresponding to the target reagent tank is no contaminated wafer risk.

[0023] In one possible implementation, determining a target pH value corresponding to a target reagent tank or a wafer cleaning time within a preset future time period based on a numerical relationship between an actual pH value and a preset pH range, whether an indicator of a wafer contamination risk level or wafer oxidation risk exists, a theoretical pH value, an actual wafer cleaning volume, and a theoretical wafer cleaning volume includes:

[0024] If the actual pH value is within the preset pH range corresponding to the target reagent tank, and the wafer oxidation risk indicator is set to indicate the presence of the wafer oxidation risk indicator, the wafer cleaning time within the preset time period in the future is calculated based on the actual pH value and the theoretical pH value.

[0025] If the actual pH value is within the preset pH range corresponding to the target reagent tank, and the contaminated wafer risk level is the target contaminated wafer risk level, the target pH value corresponding to the target reagent tank is calculated based on the actual silicon wafer cleaning volume, the theoretical silicon wafer cleaning volume, and the preset pH range;

[0026] If the actual pH value is less than the lower limit of the preset pH range, the target pH value corresponding to the target reagent tank is calculated based on the actual cleaning volume of the silicon wafer, the theoretical cleaning volume of the silicon wafer and the preset pH range;

[0027] If the actual pH value is greater than the upper limit of the preset pH range, the silicon wafer cleaning time within a future preset time period is calculated based on the actual pH value and the upper limit of the preset pH range.

[0028] In one possible implementation, calculating the target pH value corresponding to the target reagent tank based on the actual cleaning volume of the silicon wafer, the theoretical cleaning volume of the silicon wafer, and the preset pH range includes:

[0029] Substitute the actual cleaning volume of the silicon wafer, the theoretical cleaning volume of the silicon wafer, and the preset pH range into the following formula to obtain the target pH value corresponding to the target reagent tank;

[0030] PH x =A-(C x / C total )*(AB);

[0031] Among them, PH x is the target pH value corresponding to the target reagent tank, A is the upper limit of the preset pH range, C x is the actual cleaning amount of the silicon wafer, C total is the theoretical cleaning volume of the silicon wafer, and B is the lower limit of the preset pH range.

[0032] In a second aspect, an embodiment of the present application further provides a silicon wafer cleaning device, the silicon wafer cleaning device comprising:

[0033] An acquisition module is used to obtain the current contaminated wafer risk level or whether there is an oxidation wafer risk indicator corresponding to the target reagent tank, the actual silicon wafer cleaning volume, the theoretical silicon wafer cleaning volume, and the actual and theoretical pH values of the reagent solution in the target reagent tank;

[0034] A determination module is configured to determine a target pH value corresponding to a target reagent tank or a wafer cleaning time within a preset time period in the future based on a numerical relationship between an actual pH value and a preset pH range, whether an indicator of a wafer contamination risk level or a wafer oxidation risk exists, a theoretical pH value, an actual wafer cleaning volume, and a theoretical wafer cleaning volume;

[0035] The control module is used to add a reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continue to clean the silicon wafer; or to make the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

[0036] In a third aspect, an embodiment of the present application further provides an electronic device comprising: a processor, a storage medium and a bus, wherein the storage medium stores machine-readable instructions executable by the processor. When the electronic device is running, the processor communicates with the storage medium through the bus, and the processor executes the machine-readable instructions to perform the steps of the silicon wafer cleaning method as described in any one of the first aspects.

[0037] In a fourth aspect, an embodiment of the present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the silicon wafer cleaning method as described in any one of the first aspects are executed.

[0038] An embodiment of the present application provides a silicon wafer cleaning method, device, electronic device and storage medium, the method comprising: obtaining the current contamination wafer risk level or oxidation wafer risk presence mark corresponding to the target chemical tank, the actual silicon wafer cleaning amount, the theoretical silicon wafer cleaning amount, and the current actual pH value and theoretical pH value of the chemical solution in the target chemical tank; determining the target pH value corresponding to the target chemical tank or the silicon wafer cleaning time within a preset time period in the future based on the numerical relationship between the actual pH value and the preset pH range, the contamination wafer risk level or oxidation wafer risk mark, the theoretical pH value, the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount; adding chemical solution to the target chemical tank until the pH value of the chemical solution in the target chemical tank reaches the target pH value and then continuing to clean the silicon wafer; or causing the target chemical tank to clean the silicon wafer according to the silicon wafer cleaning time. This application adds chemical solution to the target chemical tank or adjusts the silicon wafer cleaning time based on the current contamination risk level, actual silicon wafer cleaning volume, theoretical silicon wafer cleaning volume and actual pH value, which can avoid the problem of oxide wafers when the silicon wafer surface is too clean and contamination wafers when it is too dirty, thereby reducing the production cost of silicon wafers and improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0040] Figure 1 A flow chart of a silicon wafer cleaning method provided in an embodiment of the present application is shown;

[0041] Figure 2 A flow chart showing another silicon wafer cleaning method provided in an embodiment of the present application is shown;

[0042] Figure 3 A schematic structural diagram of a silicon wafer cleaning device provided in an embodiment of the present application is shown;

[0043] Figure 4 A schematic structural diagram of an electronic device provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the drawings in the present application only serve the purpose of illustration and description and are not used to limit the scope of protection of the present application. In addition, it should be understood that the schematic drawings are not drawn to scale. The flowcharts used in this application illustrate the operations implemented according to some embodiments of the present application. It should be understood that the operations of the flowcharts can be implemented out of sequence, and steps without logical context can be reversed or implemented simultaneously. In addition, those skilled in the art, under the guidance of the contents of this application, can add one or more other operations to the flowchart, or remove one or more operations from the flowchart.

[0045] In addition, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0046] To enable those skilled in the art to utilize the present disclosure, the following embodiments are provided in conjunction with the specific application scenario of "silicon wafer cleaning." Those skilled in the art will appreciate that the general principles defined herein can be applied to other embodiments and application scenarios without departing from the spirit and scope of this disclosure. While this disclosure primarily focuses on the "silicon wafer cleaning" scenario, it should be understood that this is merely an exemplary embodiment.

[0047] It should be noted that the term "comprising" will be used in the embodiments of the present application to indicate the existence of the features declared thereafter, but does not exclude the addition of other features.

[0048] The following is a detailed description of a silicon wafer cleaning method provided in an embodiment of the present application.

[0049] Reference Figure 1 FIG. 1 is a flow chart of a method for cleaning a silicon wafer according to an embodiment of the present application. The exemplary steps of the embodiment of the present application are described below:

[0050] S101. Obtain the current contaminated wafer risk level or oxidation wafer risk indicator corresponding to the target reagent tank, the actual silicon wafer cleaning volume, the theoretical silicon wafer cleaning volume, and the actual pH value and theoretical pH value of the reagent solution in the target reagent tank.

[0051] In the embodiment of the present application, the current contaminated wafer risk level refers to the risk level of the silicon wafer currently being cleaned by the target reagent tank as a contaminated wafer (such as no risk, low risk, medium-low risk, medium-high risk and high risk). The actual cleaning volume of silicon wafers refers to the actual number of silicon wafers cleaned by the target reagent tank in the current cycle up to the current moment. The theoretical cleaning volume of silicon wafers refers to the theoretical number of silicon wafers cleaned by the target reagent tank in the current dressing cycle up to the current moment. The actual value of pH is the pH value. According to the preset time interval corresponding to the current cleaning time period of the target reagent tank in the current dressing cycle, the current contaminated wafer risk level corresponding to the target reagent tank or whether there is an identification of the oxidation wafer risk, the actual cleaning volume of silicon wafers, the theoretical cleaning volume of silicon wafers, and the actual pH value and theoretical pH value of the reagent solution in the target reagent tank are obtained. Specifically, if the presence of the risk of oxidation wafer is marked as the corresponding mark for oxidation risk, then the current presence of the risk of oxidation wafer, the actual cleaning amount of silicon wafer, the theoretical cleaning amount of silicon wafer, and the current actual pH value and theoretical pH value of the reagent solution in the target reagent tank corresponding to the target reagent tank are obtained; if the presence of the risk of oxidation wafer is marked as the corresponding mark for no oxidation risk, then the current presence of the risk of oxidation wafer, the actual cleaning amount of silicon wafer, the theoretical cleaning amount of silicon wafer, and the current actual pH value and theoretical pH value of the reagent solution in the target reagent tank are obtained.

[0052] Taking a 24-hour dressing cycle (i.e., the target dressing tank changes the dressing solution once every 24 hours) as an example, the data is obtained every 3 hours for the first 6 hours; every 2 hours from 7 to 18 hours; and every hour from 19 to 24 hours.

[0053] Here, a medicine-taking mechanism is installed on the side of the target medicine tank, which automatically obtains the medicine solution from the target medicine tank according to the preset pH detection time interval; the obtained medicine solution is dropped on the pH test finger, and the pH test paper with the medicine solution is compared with the detection color card by AI intelligent recognition to obtain the actual pH value of the target medicine tank in the future within the time period corresponding to the pH acquisition time interval; or the medicine-taking mechanism automatically obtains the medicine solution from the target medicine tank according to the preset pH detection time interval; the obtained medicine solution is analyzed to obtain the actual pH value of the target medicine tank in the future within the time period corresponding to the pH acquisition time interval.

[0054] For example, if the preset pH value acquisition interval is 1 hour, the actual pH value obtained is the actual pH value within the next 1 hour.

[0055] Here, the theoretical pH of the current pH value of the reagent solution in the target reagent tank is calculated by the following formula: theory :

[0056] PHtheory =A-[x*(AB) / 24];

[0057] Among them, A is the upper limit value of the preset pH range of the medicine solution in the target medicine tank, x is the current cleaning time of the target medicine tank in the current medicine change cycle, and B is the lower limit value of the preset pH range.

[0058] Furthermore, the following steps are performed to obtain the current contaminated tablet risk level and whether there is an oxidation tablet risk indicator corresponding to the target reagent tank:

[0059] Step 1: Obtain the current silicon wafer cleaning quality corresponding to the target reagent tank and the number of silicon wafers whose silicon wafer cleaning quality is continuously abnormally high and whose surface color brightness is greater than a preset standard color brightness.

[0060] In an embodiment of the present application, obtaining the current silicon wafer cleaning quality corresponding to the target reagent tank includes: obtaining the surface silicon powder amount of the silicon wafer in the sorting process according to a preset quality detection time interval; if the surface silicon powder amount is greater than the preset maximum silicon powder amount, the silicon wafer cleaning quality of the target reagent tank in the future time period corresponding to the quality detection time interval is low quality (i.e., the silicon wafer currently cleaned by the target reagent tank is dirty); if the surface silicon powder amount is less than or equal to the preset maximum silicon powder amount and greater than the preset minimum silicon powder amount, the silicon wafer cleaning quality of the target reagent tank in the future time period corresponding to the quality detection time interval is high quality (i.e., the silicon wafer currently cleaned by the target reagent tank is clean); if the surface silicon powder amount is less than the preset minimum silicon powder amount, the silicon wafer cleaning quality of the target reagent tank in the future time period corresponding to the quality detection time interval is abnormally high quality (i.e., the silicon wafer currently cleaned by the target reagent tank is abnormally clean, and oxidation wafers may appear when it is abnormally clean).

[0061] Step 2: If the number of silicon wafers is greater than the preset number of silicon wafers (which can be set to 800), the presence of an oxidation risk indicator is determined as an oxidation risk corresponding indicator.

[0062] Step 3. If the number of silicon wafers is less than the preset number of silicon wafers, the mark indicating whether there is a risk of wafer oxidation is determined as the mark corresponding to no risk of oxidation; and based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual cleaning amount of the silicon wafer and the theoretical cleaning amount of the silicon wafer, and the silicon wafer cleaning quality, the current contaminated wafer risk level corresponding to the target reagent tank is determined.

[0063] Specifically, if the actual pH value is less than the theoretical pH value, the actual silicon wafer cleaning amount is less than the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality is high, then the reagent solution in the target reagent tank is stirred; if the pH value of the reagent solution after stirring is less than the theoretical pH value, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk.

[0064] Specifically, if the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0065] In an embodiment of the present application, if the ratio of the actual pH value to the theoretical pH value is greater than or less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, it means that the actual pH value and the theoretical cleaning amount of the silicon wafer do not increase or decrease proportionally; if the ratio of the actual pH value to the theoretical pH value is equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, it means that the actual pH value and the theoretical cleaning amount of the silicon wafer increase or decrease proportionally.

[0066] Specifically, if the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is high, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; if the ratio of the actual pH value to the theoretical pH value is less than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0067] Specifically, if the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0068] Specifically, if the actual pH value is greater than the theoretical pH value, the actual silicon wafer cleaning amount is less than the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality is high, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount; if the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-low risk; if the ratio of the actual pH value to the theoretical pH value is less than or equal to the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, then the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0069] Specifically, if the actual pH value is greater than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is low risk.

[0070] Specifically, if the actual pH value is greater than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the silicon wafer cleaning quality is high, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-low risk; if the ratio of the actual pH value to the theoretical pH value is equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is low risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0071] Specifically, if the actual pH value is greater than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-low risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is high risk; if the ratio of the actual pH value to the theoretical pH value is equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk.

[0072] Furthermore, the theoretical cleaning volume of the silicon wafer is calculated using the following formula:

[0073] C theory =x*C / T;

[0074] Among them, C theory is the theoretical cleaning volume of the silicon wafer, x is the current cleaning time of the target reagent tank in the current reagent change cycle, and C is the preset total silicon wafer cleaning volume in one reagent change cycle T.

[0075] S102. Determine the target pH value corresponding to the target reagent tank or the cleaning time of the silicon wafer within a preset time period in the future based on the numerical relationship between the actual pH value and the preset pH range, whether there is an indicator of the risk level of wafer contamination or wafer oxidation risk, the theoretical pH value, the actual cleaning volume of the silicon wafer, and the theoretical cleaning volume of the silicon wafer.

[0076] Specifically, if the actual pH value is within the preset pH range corresponding to the target reagent tank, and the indicator indicating whether there is a risk of wafer oxidation is set to indicate the presence of a risk of wafer oxidation, the silicon wafer cleaning time within the future preset time period is calculated based on the actual pH value and the theoretical pH value.

[0077] In the embodiment of the present application, the actual pH value and the theoretical pH value are substituted into the following formula to obtain the silicon wafer cleaning time within the future preset time period:

[0078] t=Z-[(L-PH theory ) / Z];

[0079] Among them, t is the cleaning time of the silicon wafer within the preset time in the future, Z is the current cleaning time of a single silicon wafer in the target reagent tank, L is the actual value of pH, PH theory The theoretical value of pH.

[0080] Here, when oxide sheets are present, the above formula can reduce the silicon wafer cleaning time and prevent the formation of oxide sheets.

[0081] Specifically, if the actual pH value is less than the lower limit of the preset pH range, the target pH value corresponding to the target reagent tank is calculated based on the actual silicon wafer cleaning volume, the theoretical silicon wafer cleaning volume and the preset pH range.

[0082] In the embodiment of the present application, the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range are substituted into the following formula to obtain the target pH value corresponding to the target reagent tank;

[0083] PH x =A-(C x / C total )*(AB);

[0084] Among them, PH x is the target pH value corresponding to the target reagent tank, A is the upper limit of the preset pH range, C x is the actual cleaning amount of the silicon wafer, C total is the theoretical cleaning volume of the silicon wafer, and B is the lower limit of the preset pH range.

[0085] Specifically, if the actual pH value is greater than the upper limit of the preset pH range, the silicon wafer cleaning time within a future preset time period is calculated based on the actual pH value and the upper limit of the preset pH range.

[0086] In the embodiment of the present application, the actual pH value and the upper limit value of the preset pH range are substituted into the following formula to obtain the silicon wafer cleaning time within the future preset time period;

[0087] t = Z - [(LA) / Z];

[0088] Among them, t is the silicon wafer cleaning time within the future preset time period, Z is the current cleaning time of a single silicon wafer in the target reagent tank, L is the actual pH value, and A is the upper limit value in the preset pH range.

[0089] Here, when the actual pH value is greater than the upper limit of the preset pH range, the above formula can reduce the silicon wafer cleaning time to prevent the occurrence of oxidation wafers.

[0090] S103, adding a reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continuing to clean the silicon wafer; or making the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

[0091] The embodiment of the present application provides a silicon wafer cleaning method, which includes: obtaining the current contamination risk level, actual silicon wafer cleaning volume, theoretical silicon wafer cleaning volume, and the current actual pH value of the reagent solution in the target reagent tank corresponding to the target reagent tank; determining the target pH value corresponding to the target reagent tank or the silicon wafer cleaning time within a preset time period in the future based on the numerical relationship between the actual pH value and the preset pH range, the contamination risk level, the actual silicon wafer cleaning volume, and the theoretical silicon wafer cleaning volume; adding reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value, and then continuing to clean the silicon wafer; or causing the target reagent tank to clean the silicon wafer according to the silicon wafer cleaning time. The present application adds reagent solution to the target reagent tank or adjusts the silicon wafer cleaning time based on the current contamination risk level, actual silicon wafer cleaning volume, theoretical silicon wafer cleaning volume, and actual pH value, thereby avoiding the problem of oxidized wafers when the silicon wafer surface is too clean and contaminated wafers when it is too dirty, thereby reducing silicon wafer production costs and improving production efficiency.

[0092] Reference Figure 2 FIG. 1 is a flow chart of a method for cleaning a silicon wafer according to an embodiment of the present application. The exemplary steps of the embodiment of the present application are described below:

[0093] S201. Obtain the current silicon wafer cleaning quality corresponding to the target reagent tank and the number of silicon wafers whose cleaning quality is continuously abnormally high and whose surface color brightness is greater than a preset standard color brightness.

[0094] S202: If the number of silicon wafers is greater than the preset number of silicon wafers, determining whether there is an oxidation risk indicator as an oxidation risk indicator.

[0095] S203. If the number of silicon wafers is less than the preset number of silicon wafers, the indicator indicating whether there is a risk of wafer oxidation is determined as the indicator corresponding to no risk of oxidation; and based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual cleaning amount of the silicon wafers and the theoretical cleaning amount of the silicon wafers, and the silicon wafer cleaning quality, the current contaminated wafer risk level corresponding to the target reagent tank is determined.

[0096] An embodiment of the present application provides another silicon wafer cleaning method, which can determine the current contaminated wafer risk level corresponding to the target reagent tank.

[0097] Based on the same inventive concept, the embodiment of the present application also provides a silicon wafer cleaning device corresponding to the silicon wafer cleaning method. Since the principle of solving the problem by the device in the embodiment of the present application is similar to the above-mentioned silicon wafer cleaning method in the embodiment of the present application, the implementation of the device can refer to the implementation of the method, and the repeated parts will not be repeated.

[0098] Reference Figure 3FIG. 1 is a schematic diagram of a silicon wafer cleaning device provided in an embodiment of the present application, wherein the silicon wafer cleaning device includes:

[0099] An acquisition module 301 is configured to obtain the current contaminated wafer risk level or the presence of an oxidation wafer risk indicator corresponding to the target reagent tank, the actual silicon wafer cleaning volume, the theoretical silicon wafer cleaning volume, and the actual and theoretical pH values of the reagent solution in the target reagent tank.

[0100] Determination module 302 is configured to determine a target pH value corresponding to a target reagent tank or a wafer cleaning time within a preset time period in the future based on a numerical relationship between the actual pH value and a preset pH range, whether a contaminated wafer risk level or an oxidation wafer risk indicator exists, a theoretical pH value, an actual wafer cleaning volume, and a theoretical wafer cleaning volume;

[0101] The control module 303 is used to add a reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continue to clean the silicon wafer; or to make the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

[0102] In one possible embodiment, the acquisition module 301 is specifically used to obtain the current silicon wafer cleaning quality corresponding to the target reagent tank and the number of silicon wafers whose silicon wafer cleaning quality is continuously abnormally high and whose silicon wafer surface color brightness is greater than the preset standard color brightness; if the number of silicon wafers is greater than the preset number of silicon wafers, the whether there is an oxidation risk mark is determined as the corresponding mark of the oxidation risk; if the number of silicon wafers is less than the preset number of silicon wafers, the whether there is an oxidation risk mark is determined as the corresponding mark of no oxidation risk; and based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality, the current contaminated wafer risk level corresponding to the target reagent tank is determined.

[0103] In one possible embodiment, the acquisition module 301 is specifically used to stir the reagent solution in the target reagent tank if the actual pH value is less than the theoretical pH value, the actual silicon wafer cleaning amount is less than the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality is high quality; if the pH value of the reagent solution after stirring is less than the theoretical pH value, the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk.

[0104] In one possible embodiment, the acquisition module 301 is specifically used to determine whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount if the actual pH value is less than the theoretical pH value, the actual silicon wafer cleaning amount is less than the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality is low quality; if the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0105] In one possible embodiment, the acquisition module 301 is specifically used to determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount if the actual pH value is less than the theoretical pH value, the actual silicon wafer cleaning amount is greater than the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality is high quality; if the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is high contaminated wafer risk; if the ratio of the actual pH value to the theoretical pH value is less than or equal to the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is no contaminated wafer risk.

[0106] In one possible embodiment, the determination module 302 is specifically used to calculate the silicon wafer cleaning time within a future preset time period based on the actual pH value and the theoretical pH value if the actual pH value is within the preset pH range corresponding to the target reagent tank and the presence of the oxidation risk is indicated as the presence of the oxidation risk corresponding mark; if the actual pH value is within the preset pH range corresponding to the target reagent tank and the contaminated wafer risk level is the target contaminated wafer risk level, the target pH value corresponding to the target reagent tank is calculated based on the actual silicon wafer cleaning amount, the theoretical silicon wafer cleaning amount and the preset pH range; if the actual pH value is less than the lower limit of the preset pH range, the target pH value corresponding to the target reagent tank is calculated based on the actual silicon wafer cleaning amount, the theoretical silicon wafer cleaning amount and the preset pH range; if the actual pH value is greater than the upper limit of the preset pH range, the silicon wafer cleaning time within a future preset time period is calculated based on the actual pH value and the upper limit of the preset pH range.

[0107] In one possible implementation, the determination module 302 is specifically configured to substitute the actual cleaning volume of the silicon wafer, the theoretical cleaning volume of the silicon wafer, and the preset pH range into the following formula to obtain a target pH value corresponding to the target reagent tank;

[0108] PH x =A-(C x / C total )*(AB);

[0109] Among them, PH x is the target pH value corresponding to the target reagent tank, A is the upper limit of the preset pH range, C x is the actual cleaning amount of the silicon wafer, C total is the theoretical cleaning volume of the silicon wafer, and B is the lower limit of the preset pH range.

[0110] An embodiment of the present application provides a silicon wafer cleaning device, which includes: an acquisition module 301, used to obtain the current contamination wafer risk level or oxidation wafer risk identification corresponding to the target chemical tank, the actual silicon wafer cleaning amount, the theoretical silicon wafer cleaning amount, and the current actual pH value and theoretical pH value of the chemical solution in the target chemical tank; a determination module 302, used to determine the target pH value corresponding to the target chemical tank or the silicon wafer cleaning time within a preset time period in the future based on the numerical relationship between the actual pH value and the preset pH range, the contamination wafer risk level or oxidation wafer risk identification, the theoretical pH value, the actual silicon wafer cleaning amount, and the theoretical silicon wafer cleaning amount; a control module 303, used to add chemical solution to the target chemical tank until the pH value of the chemical solution in the target chemical tank reaches the target pH value and then continue to clean the silicon wafer; or to enable the target chemical tank to clean the silicon wafer according to the silicon wafer cleaning time. This application adds chemical solution to the target chemical tank or adjusts the silicon wafer cleaning time based on the current contamination risk level, actual silicon wafer cleaning volume, theoretical silicon wafer cleaning volume and actual pH value, which can avoid the problem of oxide wafers when the silicon wafer surface is too clean and contamination wafers when it is too dirty, thereby reducing the production cost of silicon wafers and improving production efficiency.

[0111] like Figure 4 As shown, an electronic device 400 provided in an embodiment of the present application includes: a processor 401, a memory 402 and a bus. The memory 402 stores machine-readable instructions executable by the processor 401. When the electronic device is running, the processor 401 and the memory 402 communicate through the bus, and the processor 401 executes the machine-readable instructions to perform the steps of the silicon wafer cleaning method as described above.

[0112] Specifically, the memory 402 and the processor 401 can be general-purpose memories and processors, which are not specifically limited here. When the processor 401 runs the computer program stored in the memory 402, the silicon wafer cleaning method can be executed.

[0113] Corresponding to the above-mentioned silicon wafer cleaning method, an embodiment of the present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is run by a processor, the steps of the above-mentioned silicon wafer cleaning method are executed.

[0114] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the system and device described above can refer to the corresponding process in the method embodiment, and will not be repeated in this application. In the several embodiments provided in this application, it should be understood that the disclosed system, device and method can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the modules is only a logical function division. There may be other division methods in actual implementation. For example, multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, indirect coupling or communication connection of devices or modules, which can be electrical, mechanical or other forms.

[0115] The modules described as separate components may or may not be physically separate, and the components shown as modules may or may not be physical units, that is, they may be located in one place or distributed across multiple network elements. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0116] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0117] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium that is executable by a processor. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the steps of the information processing method described in each embodiment of the present application. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a ROM, a RAM, a magnetic disk, or an optical disk.

[0118] The above are only specific embodiments of the present application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A method for cleaning a silicon wafer, characterized in that: The method comprises: Obtain the current contaminated wafer risk level or whether there is an oxidation wafer risk indicator corresponding to the target reagent tank, the actual silicon wafer cleaning volume, the theoretical silicon wafer cleaning volume, and the current actual pH value and theoretical pH value of the reagent solution in the target reagent tank; Determine a target pH value corresponding to the target reagent tank or a silicon wafer cleaning time within a preset time period in the future based on a numerical relationship between the actual pH value and a preset pH range, whether an indicator of the contaminated wafer risk level or the oxidation wafer risk exists, the theoretical pH value, the actual silicon wafer cleaning volume, and the theoretical silicon wafer cleaning volume; Adding a reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continuing to clean the silicon wafer; or making the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

2. The method for cleaning a silicon wafer according to claim 1, wherein: Determine whether the current contamination risk level and oxidation risk level corresponding to the target reagent tank are marked by the following steps: Obtaining the current silicon wafer cleaning quality corresponding to the target reagent tank and the number of silicon wafers whose cleaning quality is continuously abnormally high and whose surface color brightness is greater than a preset standard color brightness; If the number of silicon wafers is greater than the preset number of silicon wafers, determining whether the risk of wafer oxidation exists as a corresponding mark of the risk of oxidation exists; If the number of silicon wafers is less than the preset number of silicon wafers, determining whether the wafer oxidation risk exists as a corresponding mark of no oxidation risk; The current contaminated wafer risk level corresponding to the target reagent tank is determined based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality.

3. The method for cleaning a silicon wafer according to claim 2, wherein: Determining the current contaminated wafer risk level corresponding to the target reagent tank based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality includes: If the actual pH value is less than the theoretical pH value, the actual silicon wafer cleaning amount is less than the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality is high, then the chemical solution in the target chemical tank is stirred; if the pH value of the chemical solution after stirring is less than the theoretical pH value, then the current contaminated wafer risk level corresponding to the target chemical tank is medium-high risk.

4. The method for cleaning a silicon wafer according to claim 2, wherein: Determining the current contaminated wafer risk level corresponding to the target reagent tank based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality includes: If the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, determining whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; If the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; If the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

5. The method for cleaning a silicon wafer according to claim 2, wherein: Determining the current contaminated wafer risk level corresponding to the target reagent tank based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality includes: If the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is high, then determining whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; If the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is high contaminated wafer risk; If the ratio of the actual pH value to the theoretical pH value is less than or equal to the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is no contaminated wafer risk.

6. The method for cleaning a silicon wafer according to any one of claims 1 to 5, characterized in that: The step of determining a target pH value corresponding to the target reagent tank or a silicon wafer cleaning time within a preset time period in the future based on a numerical relationship between the actual pH value and a preset pH range, the presence of an indicator for the contaminated wafer risk level or the oxidation wafer risk, the theoretical pH value, the actual silicon wafer cleaning volume, and the theoretical silicon wafer cleaning volume includes: If the actual pH value is within the preset pH range corresponding to the target reagent tank, and the wafer oxidation risk indicator is set to indicate the presence of the wafer oxidation risk indicator, then the silicon wafer cleaning time within a future preset time period is calculated based on the actual pH value and the theoretical pH value; If the actual pH value is within the preset pH range corresponding to the target reagent tank, and the contaminated wafer risk level is the target contaminated wafer risk level, then the target pH value corresponding to the target reagent tank is calculated based on the actual silicon wafer cleaning volume, the theoretical silicon wafer cleaning volume, and the preset pH range; If the actual pH value is less than the lower limit of the preset pH range, then calculating the target pH value corresponding to the target reagent tank according to the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range; If the actual pH value is greater than the upper limit of the preset pH range, the silicon wafer cleaning time within a future preset time period is calculated based on the actual pH value and the upper limit of the preset pH range.

7. The method for cleaning a silicon wafer according to claim 6, wherein: Calculating the target pH value corresponding to the target reagent tank according to the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer, and the preset pH range includes: Substituting the actual cleaning volume of the silicon wafer, the theoretical cleaning volume of the silicon wafer, and the preset pH range into the following formula, the target pH value corresponding to the target reagent tank is obtained; PH x =A-(C x / C total )*(A-B); Among them, PH x is the target pH value corresponding to the target reagent tank, A is the upper limit of the preset pH range, C x is the actual cleaning amount of the silicon wafer, C total is the theoretical cleaning amount of the silicon wafer, and B is the lower limit of the preset pH range.

8. A silicon wafer cleaning device, characterized in that: The device includes: An acquisition module is used to obtain the current contaminated wafer risk level or the presence of an oxidation wafer risk indicator corresponding to the target reagent tank, the actual silicon wafer cleaning volume, the theoretical silicon wafer cleaning volume, and the actual pH value and theoretical pH value of the reagent solution in the target reagent tank; a determination module, configured to determine a target pH value corresponding to the target reagent tank or a silicon wafer cleaning time within a preset time period in the future based on a numerical relationship between the actual pH value and a preset pH range, whether an indicator of the contaminated wafer risk level or the oxidized wafer risk exists, the theoretical pH value, the actual silicon wafer cleaning volume, and the theoretical silicon wafer cleaning volume; The control module is used to add a reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continue to clean the silicon wafer; or to make the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

9. An electronic device, characterized in that: include: A processor, a storage medium and a bus, wherein the storage medium stores machine-readable instructions executable by the processor. When the electronic device is running, the processor and the storage medium communicate via the bus, and the processor executes the machine-readable instructions to perform the steps of the silicon wafer cleaning method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the silicon wafer cleaning method according to any one of claims 1 to 7 are executed.

Images