Mask plate for manufacturing surface acoustic wave resonator

Abstract

The invention discloses a mask plate for manufacturing a surface acoustic wave resonator. The mask plate comprises a glass substrate and a mask interdigital transducer positioned on one side of the glass substrate, the mask interdigital transducer comprises a first mask bus bar, and first mask true fingers and first mask false fingers which are alternately arranged and connected to the first mask bus bar; the second mask true fingers and the second mask false fingers are alternately arranged and connected to the second mask bus bar; each first mask true finger and each second mask true finger respectively comprise a first main body; each first mask false finger and each second mask false finger respectively comprise a second main body; the at least one first mask true finger and / or the at least one second mask true finger further comprises a first end integrally connected with the first main body; the first end includes a first groove. According to the surface acoustic wave resonator manufactured by the mask plate provided by the invention, the leakage of transverse energy can be reduced, and the Q value of the surface acoustic wave resonator is improved.

Description

Technical Field

[0001] The invention relates to the field of communication technology, and in particular to a mask for manufacturing a surface acoustic wave resonator. Background Art

[0002] As communication technology develops from 2G to 5G, the number of communication frequency bands has gradually increased (from 4 frequency bands in 2G to more than 50 frequency bands in 5G). In order to improve the compatibility of smartphones with different communication standards, the amount of filters required for 5G smartphones will increase significantly, driving large-scale growth in the filter market. The RF filter currently widely used in wireless communication terminals is the surface acoustic wave filter, which is responsible for receiving and transmitting RF signals in the channel and outputting signals of specific frequencies from the input multiple RF signals. At the same time, with the continuous development of mobile communication technology and the modularization of RF front-ends, the market demand for filters tends to be more complex, high-end, and miniaturized.

[0003] Surface acoustic wave devices based on single-crystal piezoelectric lithium tantalate substrates have been widely used in RF filters. However, due to the limitations of the Q value and high-frequency temperature coefficient of single-crystal piezoelectric materials, they are difficult to meet the requirements of RF front-end chips.

[0004] Surface acoustic wave resonators that still use traditional designs will experience lateral energy leakage in actual applications. The higher the frequency, the more serious the lateral energy leakage, which leads to a decrease in the Q value of the entire surface acoustic wave resonator. Summary of the invention

[0005] The invention provides a mask plate for manufacturing a surface acoustic wave resonator. The surface acoustic wave resonator manufactured by the mask plate provided by the invention can reduce the leakage of lateral energy and improve the Q value of the surface acoustic wave resonator.

[0006] The present invention provides a mask for manufacturing a surface acoustic wave resonator, the mask comprising: a glass substrate and a mask interdigital transducer located on one side of the glass substrate;

[0007] The mask interdigital transducer comprises: a first mask bus bar and a first mask true finger and a first mask false finger which are alternately arranged and connected to the first mask bus bar; a second mask bus bar and a second mask true finger and a second mask false finger which are alternately arranged and connected to the second mask bus bar; the first mask true finger and the second mask false finger are arranged oppositely, a first gap is provided between the first mask true finger and the second mask false finger, the second mask true finger and the first mask false finger are arranged oppositely, a second gap is provided between the second mask true finger and the first mask false finger, wherein the angle between the arrangement direction of each of the first gaps and the first direction is greater than a set angle, the angle between the arrangement direction of each of the second gaps and the first direction is greater than the set angle, and on a plane parallel to the plane of the glass substrate, the first direction is perpendicular to the length direction of the first mask true finger, and the set angle is greater than 0°;

[0008] Each of the first mask true fingers and each of the second mask true fingers includes a first body;

[0009] Each of the first mask fingers and each of the second mask fingers includes a second body;

[0010] At least one of the first mask fingers and / or at least one of the second mask fingers also includes a first end integrally connected to the first body, the first end of the first mask finger is located on a side of the first body of the first mask finger away from the first mask bus, and the first end of the second mask finger is located on a side of the first body of the second mask finger away from the second mask bus; the first end includes a first groove; in the length direction along the first mask finger, the depth of the first groove is less than the length of the first end; in the first direction, the width of the first end is greater than the width of the first body.

[0011] Optionally, at least one of the first mask fingers and / or at least one of the second mask fingers further comprises a second end integrally connected to the second body, the second end of the first mask finger being located on a side of the second body of the first mask finger away from the first mask bus bar, and the second end of the second mask finger being located on a side of the second body of the second mask finger away from the second mask bus bar; the second end comprises a second groove; in the length direction along the first mask finger, the depth of the second groove is less than the length of the second end; in the first direction, the width of the second end is greater than the width of the second body.

[0012] Optionally, all of the first mask fingers include a first terminal integrally connected to the first body;

[0013] All of the second mask fingers include a second terminal integrally connected to the second body.

[0014] Optionally, all of the second mask fingers include a first terminal integrally connected to the first body;

[0015] All of the first mask fingers include a second terminal integrally connected to the second body.

[0016] Optionally, the first groove of the first mask finger and the first body of the first mask finger share a symmetry axis; the first groove of the second mask finger and the first body of the second mask finger share a symmetry axis.

[0017] Optionally, the second groove of the first mask finger and the second body of the first mask finger share a symmetry axis; the second groove of the second mask finger and the second body of the second mask finger share a symmetry axis.

[0018] Optionally, the width of the first groove is 0.1λ to 0.3λ;

[0019] The width of the second groove is 0.1λ-0.3λ, wherein λ is the wavelength incident to the surface acoustic wave resonator.

[0020] Optionally, in the first direction, a ratio of a width of the first end head to a width of the first body is 1.2 to 1.8; a ratio of a width of the second end head to a width of the second body is 1.2 to 1.8.

[0021] Optionally, along the length direction of the first mask finger, a ratio of the length of the first end to the depth of the first groove is 1.8 to 2.2, and a ratio of the length of the second end to the depth of the second groove is 1.8 to 2.2.

[0022] Optionally, the angle between the arrangement direction of each of the first gaps and the first direction ranges from 2 to 15°;

[0023] The angle between the arrangement direction of each of the second gaps and the first direction is in the range of 2 to 15 degrees.

[0024] The present embodiment provides a mask for making a surface acoustic wave resonator, the mask comprising a first mask bus bar and a first mask true finger and a first mask false finger alternately connected to the first mask bus bar, and also comprising a second mask bus bar and a second mask true finger and a second mask false finger alternately connected to the second mask bus bar. Among them, at least one of the first mask true finger and / or the second mask true finger comprises a first main body and a first end connected integrally to the first main body. The width of the first end is greater than the width of the first main body, and the first end comprises a first groove. The first end in the present embodiment can compensate for the image error caused by diffraction. The surface acoustic wave resonator made by the mask provided by the present invention can reduce the leakage of lateral energy of the surface acoustic wave resonator and improve the Q value of the surface acoustic wave resonator.

[0025] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0027] Figure 1 It is a structural schematic diagram of an existing mask plate for manufacturing a surface acoustic wave resonator;

[0028] Figure 2 is based on Figure 1 A schematic structural diagram of a surface acoustic wave resonator fabricated by a mask as shown;

[0029] Figure 3 is a schematic structural diagram of a mask plate for manufacturing a surface acoustic wave resonator provided in an embodiment of the present invention;

[0030] Figure 4 is a schematic structural diagram of another mask plate for manufacturing a surface acoustic wave resonator provided according to an embodiment of the present invention;

[0031] Figure 5 is a schematic structural diagram of another mask plate for manufacturing a surface acoustic wave resonator provided according to an embodiment of the present invention;

[0032] Figure 6 yes Figure 5 Schematic diagram of the analytical structure of the mask shown;

[0033] Figure 7 To pass Figure 5The admittance amplitude of the surface acoustic wave resonator made by the mask shown is Figure 2 Measured graph of the admittance amplitude of the corresponding surface acoustic wave resonator;

[0034] Figure 8 To pass Figure 5 The real part of the admittance of the surface acoustic wave resonator made by the mask shown is Figure 2 The measured graph of the real part of the admittance of the corresponding SAW resonator;

[0035] Fig. 9 To pass Figure 5 The Smith curve of the surface acoustic wave resonator made by the mask shown in the figure is Figure 2 Comparison of the Smith curves of the corresponding SAW resonators;

[0036] Fig.10 To pass Figure 5 The Q value of the surface acoustic wave resonator made by the mask shown is Figure 2 The measured Q value of the corresponding surface acoustic wave resonator;

[0037] Fig.11 It is a schematic structural diagram of another mask plate for manufacturing a surface acoustic wave resonator provided according to an embodiment of the present invention. DETAILED DESCRIPTION

[0038] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0039] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0040] The inventors have found that the cause of the problems described in the background technology is that due to the optical diffraction effect, the surface acoustic wave resonator manufactured by the existing mask for manufacturing the surface acoustic wave resonator is inconsistent with the structure of the existing mask, and the fingers of the surface acoustic wave resonator actually manufactured are sharper on the side away from the bus bar. The surface acoustic wave resonator with this structure has serious lateral energy leakage and a low Q value. For example, Figure 1 This is a schematic diagram of the structure of the existing mask for making surface acoustic wave resonators. Figure 1 The mask plate includes a glass substrate 100 and a mask interdigital transducer 101 located on one side of the glass substrate 100, and the mask interdigital transducer 101 includes a first mask bus bar 102, a second mask bus bar 103, a plurality of first mask real fingers 104, a plurality of second mask real fingers 105, a plurality of first mask dummy fingers 106 and a plurality of second mask dummy fingers 107. Figure 2 is based on Figure 1 The schematic diagram of the structure of the surface acoustic wave resonator made by the mask shown in FIG. Figure 1 and Figure 2 It can be seen that the structure of the IDT in the actual surface acoustic wave resonator is inconsistent with the structure of the mask IDT 101 in the mask plate, and the finger in the actual surface acoustic wave resonator is sharper on the side away from the bus bar. The inventors have tested and found that the spacing between the first real finger and the first dummy finger in the same direction is greater than the spacing m between the first mask real finger 104 and the first mask dummy finger 106 in the mask plate. Figure 2 The SAW resonator shown has a low Q value.

[0041] In order to solve the problem of low Q value of surface acoustic wave resonators in the prior art, this embodiment provides a mask for making a surface acoustic wave resonator. The surface acoustic wave resonator made by the mask provided by this embodiment can reduce the leakage of lateral energy and improve the Q value of the surface acoustic wave resonator.

[0042] Figure 3 is a schematic structural diagram of a mask plate for manufacturing a surface acoustic wave resonator according to an embodiment of the present invention, with reference to Figure 3 The mask for making a surface acoustic wave resonator provided in this embodiment includes: a glass substrate 100 and a mask interdigital transducer 200 located on one side of the glass substrate 100; the mask interdigital transducer 200 includes: a first mask bus bar 210 and a first mask true finger 220 and a first mask dummy finger 230 alternately arranged and connected to the first mask bus bar 210; a second mask bus bar 240 and a second mask true finger 250 and a second mask dummy finger 260 alternately arranged and connected to the second mask bus bar 240.

[0043] The first mask real finger 220 and the second mask fake finger 260 are arranged opposite to each other, and a first gap 10 is provided between the first mask real finger 220 and the second mask fake finger 260. The second mask real finger 250 and the first mask fake finger 230 are arranged opposite to each other, and a second gap 20 is provided between the second mask real finger 250 and the first mask fake finger 230. The angle between the arrangement direction of each first gap 10 and the first direction X is greater than a set angle, and the angle between the arrangement direction of each second gap 20 and the first direction X is greater than a set angle. On a plane parallel to the plane of the glass substrate 100, the first direction X is perpendicular to the length direction of the first mask real finger 220, and the set angle is greater than 0°.

[0044] Each first mask real finger 220 and each second mask real finger 250 includes a first body 221; each first mask fake finger 230 and each second mask fake finger 260 includes a second body 231; at least one first mask real finger 220 and / or at least one second mask real finger 250 also includes a first end 222 integrally connected to the first body 221, the first end 222 of the first mask real finger 220 is located on the side of the first body 221 of the first mask real finger 220 away from the first mask bus 210, and the first end 222 of the second mask real finger 250 is located on the side of the first body 221 of the second mask real finger 250 away from the second mask bus 240; the first end 222 includes a first groove; in the length direction along the first mask real finger 220, the depth of the first groove is less than the length of the first end 222; in the first direction X, the width of the first end 222 is greater than the width of the first body 221.

[0045] Specifically, the arrangement direction of the first gaps 10 , the arrangement direction of the second gaps 20 , the extension direction of the first mask busbars 210 , and the extension direction of the second mask busbars 240 are parallel to each other.

[0046] Figure 3 The mask interdigital transducer 200 in the mask template shown is provided with the first end 222 only in part of the first mask true finger 220. The first mask true finger 220 and the second mask true finger 250 may also be provided with the first end 222 at the same time. Figure 4 is a structural schematic diagram of another mask plate for manufacturing a surface acoustic wave resonator according to an embodiment of the present invention, with reference to Figure 4 When the first mask finger 220 includes the first body 221 and the first end 222 , the second mask finger 250 also includes the first body 221 and the first end 222 .

[0047] A first end 222 is provided on the side of the first mask true finger 220 away from the first mask bus bar 210. Since the width of the first end 222 is greater than the width of the first body 221, the width of the first true finger actually manufactured away from the first bus bar can be wider, thereby avoiding the problem of the first true finger being sharper away from the first bus bar in the prior art. The provision of the first end 222 can compensate for the image error caused by diffraction, so that the ends of the manufactured first true finger and the second false finger are wider, so as to effectively reduce the leakage of lateral energy, thereby improving the Q value of the surface acoustic wave resonator, and further reducing the insertion loss of the filter. Exemplary, Figure 5 is a structural schematic diagram of another mask plate for manufacturing a surface acoustic wave resonator according to an embodiment of the present invention, with reference to Figure 5 On the basis that all the first mask real fingers 220 and the second mask real fingers 250 include the first body 221 and the first terminal 222, all the first mask fake fingers 230 and all the second mask fake fingers 260 include the second body 231 and the second terminal 232 integrally connected to the second body 231.

[0048] Figure 6 yes Figure 5 The analytical structure diagram of the mask template shown in FIG. Figure 1 , Figure 5 and Figure 6 , which can be understood as Figure 1 On the basis of each first mask real finger 104, each second mask real finger 105, each first mask fake finger 106 and each second mask fake finger 107 of the mask template shown in the figure, two cuboids are added to each of them to form Figure 5 The mask shown, Figure 1 The spacing m between the first mask real finger 104 and the first mask fake finger 106 is equal to Figure 6 The inventors have found that by Figure 5 The interdigital transducer in the surface acoustic wave resonator made by the mask shown is Figure 1 The mask interdigital transducers 101 in the mask shown are approximately identical, that is, Figure 5 The IDT fabricated by the mask shown does not have the problem of pointed tips on the side of the fingers away from the bus bar.

[0049] It should be noted that the finger strips in this embodiment are Figure 5 The first mask true finger 220 in the first true finger produced by Figure 5 The second mask true finger 250 produced by the second true finger, through Figure 5 The first mask fake finger 230 in the first fake finger or the first fake finger made by Figure 5The second fake finger is made by the second mask fake finger 260 in.

[0050] Figure 7 To pass Figure 5 The admittance amplitude of the surface acoustic wave resonator made by the mask shown is Figure 2 The measured admittance amplitude of the corresponding SAW resonator, Figure 8 To pass Figure 5 The real part of the admittance of the surface acoustic wave resonator made by the mask shown is Figure 2 The measured graph of the real part of the admittance of the corresponding surface acoustic wave resonator, refer to Figure 7 and Figure 8 , Figure 7 and Figure 8 The solid lines in the figure represent the Figure 5 The measured curve of the surface acoustic wave resonator made by the mask shown in the figure, Figure 7 and Figure 8 The dashed lines in the Figure 2 The corresponding measured curve of the surface acoustic wave resonator is Figure 7 and Figure 8 It can be clearly seen that the transverse mode ripples appear in the relationship curve between the real part of the admittance and the frequency of the existing surface acoustic wave resonator. In practical applications, the generated transverse mode ripples are not suitable for the generation of radio frequency filters. The surface acoustic wave resonator produced by the mask template for producing the surface acoustic wave resonator provided by the embodiment of the present invention can effectively suppress the transverse ripples, and thus can effectively and significantly reduce the lateral energy leakage of the resonator. Fig. 9 To pass Figure 5 The Smith curve of the surface acoustic wave resonator made by the mask shown in the figure is Figure 2 The corresponding Smith curve comparison chart of the surface acoustic wave resonator, Fig. 9 The thick solid line in the figure indicates the Figure 5 The measured curve of the surface acoustic wave resonator made by the mask shown in the figure, Fig. 9 The dotted line in Figure 2 The corresponding measured curve of the surface acoustic wave resonator is Fig. 9 It can be seen from the figure that the performance of the surface acoustic wave resonator manufactured by using the mask for manufacturing the surface acoustic wave resonator provided by this embodiment is more superior than that of the surface acoustic wave resonator in the prior art. Fig.10 To pass Figure 5 The Q value of the surface acoustic wave resonator made by the mask shown is Figure 2 The corresponding measured graph of the Q value of the surface acoustic wave resonator, Fig.10 The solid line in the Figure 5 The measured curve of the surface acoustic wave resonator made by the mask shown in the figure, the dotted line represents Figure 2 The corresponding measured curve of the SAW resonator, Fig.10 A graph showing the relationship between frequency and Q at different wavelengths, wherein each peak in the solid line represents a curve at one wavelength, and similarly, each peak in the dotted line represents a curve at one wavelength. By way of example, curve S1, curve S2 and curve S3 represent measured curves of surface acoustic wave resonators manufactured using the mask for manufacturing the surface acoustic wave resonator provided in this embodiment, and curves P1, curve P2 and curve P3 represent measured curves of existing surface acoustic wave resonators, wherein curve S1 has the same wavelength as curve P1, curve S2 has the same wavelength as curve P2, and curve S3 has the same wavelength as curve P3. It can be seen that at the same wavelength, the surface acoustic wave resonator manufactured using the mask for manufacturing the surface acoustic wave resonator provided in this embodiment has a higher Q value, and in particular, the higher the frequency, the more obvious the effect.

[0051] The present embodiment provides a mask for making a surface acoustic wave resonator, the mask comprising a first mask bus bar and a first mask true finger and a first mask false finger alternately connected to the first mask bus bar, and also comprising a second mask bus bar and a second mask true finger and a second mask false finger alternately connected to the second mask bus bar. Among them, at least one of the first mask true finger and / or the second mask true finger comprises a first main body and a first end connected integrally to the first main body. The width of the first end is greater than the width of the first main body, and the first end comprises a first groove. The first end in the present embodiment can compensate for the image error caused by diffraction. The surface acoustic wave resonator made by the mask provided by the present invention can reduce the leakage of lateral energy of the surface acoustic wave resonator and improve the Q value of the surface acoustic wave resonator.

[0052] Optional, continue to refer to Figure 5 At least one first mask finger 230 and / or at least one second mask finger 260 also includes a second end 232 integrally connected to the second body 231. The second end 232 of the first mask finger 230 is located on a side of the second body 231 of the first mask finger 230 away from the first mask bus 210, and the second end 232 of the second mask finger 260 is located on a side of the second body 231 of the second mask finger 260 away from the second mask bus 240; the second end 232 includes a second groove; in the length direction of the first mask finger 230, the depth of the second groove is less than the length of the second end 232; in the first direction X, the width of the second end 232 is greater than the width of the second body 231.

[0053] Specifically, by providing the second end 232 in the first mask dummy finger 230 and the second mask dummy finger 260, the distance between the first real finger and the second dummy finger in the actually manufactured surface acoustic wave resonator can be reduced, and the distance between the second real finger and the first dummy finger can be reduced. Compared with the Q value of the surface acoustic wave resonator manufactured by using a mask plate in which only the first end 222 is provided in the first mask real finger 220 and / or the second mask real finger 250, the second end 232 is provided in the first mask dummy finger 230 and / or the second mask dummy finger 260 of the mask plate, so that the Q value of the manufactured surface acoustic wave resonator can be higher.

[0054] Optional, Fig.11 is a structural schematic diagram of another mask plate for manufacturing a surface acoustic wave resonator according to an embodiment of the present invention, with reference to Fig.11 All first mask real fingers 220 include first terminals 222 integrally connected to the first body 221; all second mask fake fingers 260 include second terminals 232 integrally connected to the second body 231. This arrangement allows the spacing between the first real fingers and the second fake fingers of the surface acoustic wave resonator manufactured using the mask provided in this embodiment to be substantially consistent with the spacing between the first mask real fingers 220 and the second mask fake fingers 260, and also avoids the phenomenon that the end of the first real finger away from the first bus bar is sharper, and the end of the second fake finger away from the second bus bar is sharper. Compared with the Q value of the existing surface acoustic wave resonator, the Q value of the surface acoustic wave resonator manufactured using the mask provided in this embodiment is higher.

[0055] Optional, continue to refer to Figure 5 All second mask real fingers 250 include first terminals 222 integrally connected to the first body 221; all first mask dummy fingers 230 include second terminals 232 integrally connected to the second body 231. This arrangement allows the spacing between the second real fingers and the first dummy fingers of the surface acoustic wave resonator manufactured using the mask provided in this embodiment to be substantially consistent with the spacing between the second mask real fingers 250 and the first mask dummy fingers 230, and also avoids the phenomenon that the end of the second real finger away from the second bus bar is sharper, and the end of the first dummy finger away from the first bus bar is sharper. Compared with the Q value of the existing surface acoustic wave resonator, the Q value of the surface acoustic wave resonator manufactured using the mask provided in this embodiment is higher.

[0056] Optionally, the first groove of the first mask true finger 220 and the first body of the first mask true finger 220 share a symmetry axis; the first groove of the second mask true finger 250 and the first body of the second mask true finger 250 share a symmetry axis. This arrangement can make the first true finger of the surface acoustic wave resonator manufactured by the mask template provided by this embodiment more symmetrical, and the second dummy finger more symmetrical, which can further improve the Q value of the surface acoustic wave resonator.

[0057] Optionally, the second groove of the first mask dummy finger 230 and the second body of the first mask dummy finger 230 share a symmetry axis; the second groove of the second mask dummy finger 260 and the second body of the second mask dummy finger 260 share a symmetry axis. In this way, the second real finger of the surface acoustic wave resonator manufactured by the mask provided by this embodiment can be more symmetrical, and the first dummy finger is more symmetrical, which can further improve the Q value of the surface acoustic wave resonator.

[0058] Based on any of the above embodiments, optionally, the width of the first groove is 0.1λ to 0.3λ; the width of the second groove may also be 0.1λ to 0.3λ; wherein λ is the wavelength incident to the surface acoustic resonator.

[0059] Specifically, the width of the first groove can be 0.1λ, 0.2λ or 0.3λ, and the width of the second groove can also be 0.1λ, 0.2λ or 0.3λ. Setting the width of the first groove to 0.1λ-0.3λ and the width of the second groove to 0.1λ-0.3λ can improve the bandwidth of the surface acoustic wave resonator manufactured using the mask provided by this embodiment.

[0060] Optionally, in the first direction X, the ratio of the width of the first end to the width of the first body is 1.2 to 1.8, and the ratio of the width of the second end to the width of the second body is 1.2 to 1.8. This arrangement can further enable the end of the first real finger, the end of the second real finger, the end of the first dummy finger, and the end of the second dummy finger to block the lateral energy leakage in the surface acoustic wave, better suppress the clutter in the surface acoustic wave, and further improve the Q value of the surface acoustic wave resonator.

[0061] Optionally, along the length direction of the first mask finger 220, the ratio of the length of the first end to the depth of the first groove includes 1.8 to 2.2, and the ratio of the length of the second end to the depth of the second groove includes 1.8 to 2.2. This arrangement can improve the Q value of the surface acoustic wave resonator manufactured using the mask provided by this embodiment.

[0062] Optionally, the angle between the arrangement direction of each first gap arrangement and the first direction is in the range of 2 to 15°; the angle between the arrangement direction of each second gap arrangement and the first direction is in the range of 2 to 15°.

[0063] Specifically, the angle between the arrangement direction of each of the first gap arrangements and the first direction is set to include 2 to 15°, and the angle between the arrangement direction of each of the second gap arrangements and the first direction is set to include 2 to 15°. This can enable the surface acoustic wave resonator manufactured using the mask provided by this embodiment to better suppress the noise in the surface acoustic wave and further improve the Q value of the surface acoustic wave resonator.

[0064] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0065] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A mask for making a surface acoustic wave resonator, characterized in that: include: A glass substrate and a mask interdigital transducer located on one side of the glass substrate; The mask interdigital transducer comprises: a first mask bus bar and a first mask true finger and a first mask false finger which are alternately arranged and connected to the first mask bus bar; a second mask bus bar and a second mask true finger and a second mask false finger which are alternately arranged and connected to the second mask bus bar; the first mask true finger and the second mask false finger are arranged oppositely, a first gap is provided between the first mask true finger and the second mask false finger, the second mask true finger and the first mask false finger are arranged oppositely, a second gap is provided between the second mask true finger and the first mask false finger, wherein the angle between the arrangement direction of each of the first gaps and the first direction is greater than a set angle, the angle between the arrangement direction of each of the second gaps and the first direction is greater than the set angle, and on a plane parallel to the plane of the glass substrate, the first direction is perpendicular to the length direction of the first mask true finger, and the set angle is greater than 0°; Each of the first mask true fingers and each of the second mask true fingers includes a first body; Each of the first mask fingers and each of the second mask fingers includes a second body; At least one of the first mask fingers and / or at least one of the second mask fingers also includes a first end integrally connected to the first body, the first end of the first mask finger is located on a side of the first body of the first mask finger away from the first mask bus, and the first end of the second mask finger is located on a side of the first body of the second mask finger away from the second mask bus; the first end includes a first groove; in the length direction along the first mask finger, the depth of the first groove is less than the length of the first end; in the first direction, the width of the first end is greater than the width of the first body.

2. The mask for manufacturing a surface acoustic wave resonator according to claim 1, characterized in that: At least one of the first mask fingers and / or at least one of the second mask fingers also includes a second end integrally connected to the second body, the second end of the first mask finger is located on a side of the second body of the first mask finger away from the first mask bus bar, and the second end of the second mask finger is located on a side of the second body of the second mask finger away from the second mask bus bar; the second end includes a second groove; in the length direction along the first mask finger, the depth of the second groove is less than the length of the second end; in the first direction, the width of the second end is greater than the width of the second body.

3. The mask for manufacturing a surface acoustic wave resonator according to claim 2, characterized in that: All of the first mask fingers include a first terminal integrally connected to the first body; All of the second mask fingers include a second terminal integrally connected to the second body.

4. The mask for manufacturing a surface acoustic wave resonator according to claim 3, characterized in that: All of the second mask elements include a first terminal integrally connected to the first body; All of the first mask fingers include a second terminal integrally connected to the second body.

5. The mask for manufacturing a surface acoustic wave resonator according to claim 4, characterized in that: The first groove of the first mask finger and the first body of the first mask finger share a symmetry axis; the first groove of the second mask finger and the first body of the second mask finger share a symmetry axis.

6. The mask for manufacturing a surface acoustic wave resonator according to claim 4, characterized in that: The second groove of the first mask finger and the second body of the first mask finger share a symmetry axis; the second groove of the second mask finger and the second body of the second mask finger share a symmetry axis.

7. The mask for manufacturing a surface acoustic wave resonator according to claim 4, characterized in that: The width of the first groove is 0.1λ to 0.3λ; The width of the second groove is 0.1λ-0.3λ, wherein λ is the wavelength incident to the surface acoustic wave resonator.

8. The mask of the surface acoustic wave resonator according to claim 2, characterized in that: In the first direction, a ratio of a width of the first end head to a width of the first body is 1.2 to 1.8; a ratio of a width of the second end head to a width of the second body is 1.2 to 1.

8.

9. The mask of the surface acoustic wave resonator according to claim 2, characterized in that: Along the length direction of the first mask finger, a ratio of the length of the first end to the depth of the first groove is 1.8 to 2.2, and a ratio of the length of the second end to the depth of the second groove is 1.8 to 2.

2.

10. The mask for manufacturing a surface acoustic wave resonator according to claim 1, characterized in that: The angle between the arrangement direction of each of the first gaps and the first direction ranges from 2 to 15°; The angle between the arrangement direction of each of the second gaps and the first direction is in the range of 2 to 15 degrees.

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