A preparation process for a light-emitting device based on gate-controlled grayscale

Abstract

The present invention discloses a process for preparing a light-emitting device based on gate-controlled grayscale, comprising: uniformly preparing a first active layer pattern and a second active layer pattern by coating a first semiconductor layer on a substrate; performing doping or coating on the first active layer pattern and the second active layer pattern to prepare the source and drain electrodes of a thin-film transistor switch and an amplifying field-effect transistor; then uniformly preparing a gate control electrode, a voltage source lead electrode, and a data lead lead electrode for the light-emitting unit; then preparing a silicon dioxide insulating layer pattern; preparing a second electrode on the silicon dioxide insulating layer pattern; preparing a light-emitting functional layer on the second electrode; and finally uniformly preparing the first electrode, the gate of the thin-film transistor switch, and the gate of the amplifying field-effect transistor. The present invention provides a light-emitting device that can adaptively adjust the gate voltage according to changes in the grayscale value when performing unified gate voltage regulation, and simplifies its preparation process.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic display, and in particular to a preparation process of a light-emitting device based on gate grayscale regulation. Background Art

[0002] Light-emitting devices in optoelectronic displays are an important component of display devices, presenting images or information through light emission. The light-emitting principle of many light-emitting devices is based on the fact that after power is applied, electrons and holes combine in the light-emitting layer to form excitons. When the excitons recombine, they release energy and emit light. Examples include QLEDs (quantum dot light-emitting diodes) and OLEDs (organic light-emitting diodes). These light-emitting devices have advantages such as rich color reproduction, high contrast, fast response speed, wide viewing angle, and energy saving and environmental protection. The luminous efficiency or brightness of these light-emitting devices is greatly affected by the carrier recombination process. Different functional layers and quantum dots are usually used to achieve optimal device efficiency. This experimental process requires a lot of time, materials, and labor costs. Therefore, gate control has emerged. Through gate control, a built-in electric field can be constructed in these light-emitting devices to achieve the control of carrier mobility and the control of luminous efficiency, which helps to improve the luminous efficiency.

[0003] Generally speaking, gate-controlled light-emitting devices require higher luminous efficiency as grayscale values ​​increase, resulting in greater energy savings. However, existing light-emitting devices rarely offer adaptive gate voltage adjustment based on individual grayscale values ​​when using unified gate voltage regulation, resulting in energy waste. Currently, there is a lack of a light-emitting device and corresponding manufacturing process that can independently adjust gate voltage based on individual grayscale values ​​during unified gate voltage regulation. Summary of the Invention

[0004] In view of some of the above-mentioned defects in the prior art, the technical problem to be solved by the present invention is to provide a preparation process for a light-emitting device based on gate-controlled grayscale, aiming to provide a light-emitting device that can adaptively adjust the gate voltage according to the change of grayscale value when performing unified gate voltage control, and to simplify its preparation process.

[0005] To achieve the above objectives, the present invention provides a process for preparing a light-emitting device based on gate-controlled grayscale, the process comprising:

[0006] Step S1: depositing a first semiconductor layer on a substrate and performing photolithography on the first semiconductor layer to form a first active layer pattern and a second active layer pattern; wherein the light-emitting device includes a light-emitting unit, a thin-film transistor switch, and an amplifying field-effect transistor, the first active layer is the active layer of the thin-film transistor switch, and the second active layer is the active layer of the amplifying field-effect transistor;

[0007] Step S2: performing doping or coating on the first active layer pattern and the second active layer pattern to prepare the source and drain of the thin film transistor switch and the amplifying field effect transistor;

[0008] Step S3, depositing a second conductive layer on the substrate, the source and drain of the thin-film transistor switch, and the source and drain of the amplifying field-effect transistor, and performing photolithography on the second conductive layer to form a gate control electrode, a voltage source lead electrode, and a data lead electrode of the light-emitting unit; wherein the gate control electrode is connected to the drain of the amplifying field-effect transistor, the voltage source lead electrode is mounted on the source of the amplifying field-effect transistor, and the data lead electrode is mounted on the source of the thin-film transistor switch;

[0009] Step S4, coating a silicon dioxide insulating layer on the gate control electrode, the source and drain of the thin film transistor switch, and the source and drain of the amplifying field effect transistor, and performing photolithography on the silicon dioxide insulating layer to form a silicon dioxide insulating layer pattern;

[0010] Step S5, preparing a second electrode on the silicon dioxide insulating layer pattern; and preparing a light-emitting functional layer on the second electrode;

[0011] Step S6: depositing a transparent conductive layer on the silicon dioxide insulating layer and the light-emitting functional layer, and performing photolithography on the transparent conductive layer to form a first electrode, a gate of the thin film transistor switch, and a gate of the amplifying field effect transistor;

[0012] Step S7: Use a first metal wire to connect the first electrode to the drain of the thin film transistor switch by drilling a well; use a second metal wire to connect the first electrode to the gate of the amplifying field effect transistor.

[0013] Optionally, the first electrode covers the side of the light-emitting functional layer, and the first metal lead connects the side of the first electrode to the drain of the thin-film transistor switch along the surface of the silicon dioxide insulating layer and by drilling a well; the second metal lead connects the side of the first electrode to the gate of the amplifying field-effect transistor along the surface of the silicon dioxide insulating layer.

[0014] Optionally, the first electrode covers the sides of the light-emitting functional layer and part of the two sides of the silicon dioxide insulating layer, and extends to the gate of the amplifying field-effect transistor and the drain of the thin-film transistor switch respectively; the first metal lead enters the drain of the thin-film transistor switch by drilling a well, and the first metal lead connects the first electrode to the drain of the thin-film transistor switch.

[0015] Optionally, the gate of the thin film transistor switch, the gate of the amplifying field effect transistor and the second electrode are uniformly manufactured using the same material and at the same layer.

[0016] Optionally, the gate of the thin film transistor switch is connected to a scan lead, the data lead electrode is connected to a data lead, and the voltage source lead electrode is connected to a regulating voltage source.

[0017] Optionally, the light-emitting unit is a quantum dot light-emitting diode, and the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer.

[0018] Optionally, the light-emitting unit is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

[0019] Optionally, in step S5, preparing a light-emitting functional layer on the second electrode includes:

[0020] According to the type of the light-emitting functional layer, the film preparation is divided into one or more times to form the light-emitting functional layer.

[0021] Optionally, it is characterized in that the first semiconductor layer is semiconductor A silicon, the second conductive layer is a metal conductive layer, and the transparent conductive layer is an indium tin oxide conductive layer.

[0022] Beneficial effects of the present invention: 1. The drain of the thin-film transistor switch of the light-emitting device prepared by the present invention is connected to the gate of the amplifying field-effect transistor (both are achieved by connecting the first electrode), the source of the amplifying field-effect transistor is connected to the control voltage source, the control voltage source is used to provide the required voltage to the source of the amplifying field-effect transistor, and the drain of the amplifying field-effect transistor is connected to the gate control electrode. When the data lead drives the selected light-emitting unit to make the light-emitting unit emit light, the driving voltage of the data lead is also applied to the gate of the amplifying field-effect transistor; when the voltage applied by the control voltage source remains unchanged, the driving voltage changes the carrier concentration and conductivity in the channel of the amplifying field-effect transistor, thereby controlling the drain current of the amplifying field-effect transistor, so that the control gate voltage of the gate control electrode changes according to the change of the driving voltage. The present invention, through the setting of the amplifying field-effect transistor, enables the amplifying field-effect transistor to determine the applied control gate voltage according to the driving voltage, and at the same time, the driving voltage also determines the grayscale value of the light-emitting unit, so that the present invention can achieve adaptive gate voltage adjustment according to the change of the grayscale value. Compared to existing technologies that adapt to grayscale changes through one-to-one gate voltage regulation, the present invention allows multiple light-emitting units to share a single regulation voltage source and achieve adaptive gate voltage adjustment based on grayscale changes, effectively reducing the complexity of the gate regulation circuit and saving energy. 2. The present invention places the light-emitting units, thin-film transistor switches, and some components of the amplifying field-effect transistor on the same level and uses the same materials for simultaneous fabrication, greatly simplifying the fabrication process and improving fabrication efficiency.

[0023] In summary, the present invention not only provides a light-emitting device that can adaptively adjust the gate voltage according to the change of grayscale value when performing unified gate voltage regulation, but also simplifies the preparation process and improves the preparation efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a schematic flow chart of a process for preparing a light-emitting device based on gate-controlled grayscale according to a specific embodiment of the present invention;

[0025] Figure 2 This is a schematic structural diagram of a stacked structure light emitting device based on grayscale value variation gate control provided by a specific embodiment of the present invention;

[0026] Figure 3 Schematic diagram of the changes of the stacked structure light emitting device in step S1 provided in a specific embodiment of the present invention;

[0027] Figure 4 Schematic diagram of the changes of the stacked structure light emitting device in step S2 provided in a specific embodiment of the present invention;

[0028] Figure 51 is a schematic diagram of changes in a stacked structure light-emitting device in step S3 provided in a specific embodiment of the present invention;

[0029] Figure 6 Schematic diagram of changes in a stacked structure light-emitting device in step S4 according to a specific embodiment of the present invention;

[0030] Figure 7 1 is a schematic diagram of changes in a stacked structure light-emitting device in step S5 provided in a specific embodiment of the present invention;

[0031] Figure 8 Schematic diagram of changes in a stacked structure light-emitting device in step S6 according to a specific embodiment of the present invention;

[0032] Figure 9 1 is a schematic diagram of changes in a stacked structure light-emitting device in step S7 provided in a specific embodiment of the present invention;

[0033] Figure 10 1 is a schematic structural diagram of a stacked structure light emitting device based on grayscale value variation gate control provided by a second specific embodiment of the present invention;

[0034] Figure 11 It is a structural schematic diagram of a stacked structure light-emitting device based on grayscale value variation gate regulation provided by the third specific embodiment of the present invention. DETAILED DESCRIPTION

[0035] The present invention discloses a process for preparing a light-emitting device based on gate-controlled grayscale. Those skilled in the art can refer to the contents of this article and appropriately improve the technical details. It should be noted that all similar replacements and modifications are obvious to those skilled in the art and are considered to be included in the present invention. The methods and applications of the present invention have been described through preferred embodiments. Relevant personnel can obviously modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of the present invention to implement and apply the technology of the present invention.

[0036] The applicant's research has found that, generally speaking, gate-controlled light-emitting devices require higher luminous efficiency and thus achieve greater energy savings as grayscale values ​​increase. However, existing light-emitting devices rarely offer adaptive gate voltage adjustments based on individual grayscale value variations when using unified gate voltage control, resulting in energy waste. Specifically, when a single control voltage is used to control multiple LEDs, adaptive adjustments cannot be made based on the varying grayscale values ​​of each LED. Consequently, corresponding light-emitting devices and methods for their manufacture are currently lacking.

[0037] Therefore, the embodiment of the present invention provides a preparation process of a light emitting device based on gate-controlled grayscale, such as Figure 1 As shown, the process includes:

[0038] Step S1: depositing a first semiconductor layer on a substrate, and performing photolithography on the first semiconductor layer to form a first active layer pattern and a second active layer pattern.

[0039] The light-emitting device includes a light-emitting unit, a thin-film transistor switch, and an amplifying field-effect transistor. The first active layer is the active layer of the thin-film transistor switch, and the second active layer is the active layer of the amplifying field-effect transistor. The light-emitting unit includes a gate control electrode, a gate insulating layer, a first electrode, a light-emitting functional layer, and a second electrode. In the embodiment of the present invention, the first electrode is an anode, and the second electrode is a cathode. The thin-film transistor switch includes a gate, a drain electrode, a first active layer, and an insulating layer; the amplifying field-effect transistor includes a gate, a drain electrode, a second active layer, and an insulating layer.

[0040] It should be noted that, in the embodiment of the present invention, the two active layers can be made of the same material and thus can be prepared uniformly.

[0041] The light emitting device changes in the step S1 preparation process are as follows: Figure 3 shown.

[0042] Step S2: doping or coating is performed on the first active layer pattern and the second active layer pattern to prepare the source and drain of the thin film transistor switch and the amplifying field effect transistor.

[0043] It should be noted that because the source and drain of the thin film transistor switch and the source and drain of the amplifying field effect transistor can be made of the same material, they are uniformly prepared at the same level, which simplifies the preparation process and speeds up the preparation efficiency.

[0044] The light emitting device changes in the step S2 preparation process are as follows: Figure 4 shown.

[0045] Step S3: deposit a second conductive layer on the substrate, the source and drain of the thin film transistor switch, and the source and drain of the amplifying field effect transistor, and perform photolithography on the second conductive layer to form the gate control electrode, voltage source lead electrode, and data lead electrode of the light emitting unit.

[0046] The gate control electrode is connected to the drain of the amplifying field effect transistor, the voltage source lead electrode is built on the source of the amplifying field effect transistor, and the data lead lead electrode is built on the source of the thin film transistor switch.

[0047] The voltage source lead electrode is mounted on the source of the amplifying field-effect transistor and is connected to a control voltage source, which in turn provides an initial voltage for the amplifying field-effect transistor. The gate control electrode is connected to the drain of the amplifying field-effect transistor, allowing the drain of the amplifying field-effect transistor to provide a control gate voltage to the gate control electrode. The data lead electrode is mounted on the source of the thin-film transistor switch to control the brightness of the light-emitting unit.

[0048] The light emitting device changes in the step S3 preparation process are as follows: Figure 5 shown.

[0049] Step S4: coating a silicon dioxide insulating layer on the gate control electrode, the source and drain of the thin film transistor switch, and the source and drain of the amplifying field effect transistor, and performing photolithography on the silicon dioxide insulating layer to form a silicon dioxide insulating layer pattern.

[0050] It should be noted that the light emitting unit, the thin film transistor switch and the amplifying field effect transistor all include an insulating layer, so the insulating layer can be prepared uniformly so that the light emitting unit, the thin film transistor switch and the amplifying field effect transistor share the insulating layer.

[0051] The light emitting device changes in the step S4 preparation process are as follows: Figure 6 shown.

[0052] Step S5: preparing a second electrode on the silicon dioxide insulating layer pattern; and preparing a light-emitting functional layer on the second electrode.

[0053] The light emitting device changes in the step S5 preparation process are as follows: Figure 7 shown.

[0054] Step S6: depositing a transparent conductive layer on the silicon dioxide insulating layer and the light-emitting functional layer, and performing photolithography on the transparent conductive layer to form a first electrode, a gate of the thin film transistor switch, and a gate of the amplifying field effect transistor.

[0055] It should be noted that the first electrode, the gate of the thin film transistor switch and the gate of the amplifying field effect transistor can be made of the same material, so they are uniformly prepared at the same level, which simplifies the preparation process and improves the preparation efficiency.

[0056] The light emitting device changes in the step S6 preparation process are as follows: Figure 8 shown.

[0057] Step S7: Use a first metal lead to connect the first electrode to the drain of the thin film transistor switch through a well; use a second metal lead to connect the first electrode to the gate of the amplifying field effect transistor.

[0058] The light emitting device changes in the step S7 preparation process are as follows: Figure 9 shown.

[0059] In the first embodiment, the finished light emitting device can be Figure 2 As shown, Figure 2 In the embodiment, the light-emitting unit includes a first electrode, a light-emitting functional layer, a second electrode, a silicon dioxide insulating layer (shared) and a control electrode; the thin film transistor switch includes a gate, a source, a drain, a first active layer and a silicon dioxide insulating layer (shared); the amplifying field effect transistor includes a gate, a source, a drain, a second active layer and a silicon dioxide insulating layer (shared).

[0060] In a specific embodiment, the first metal film layer, the second metal film layer, and the third metal can be made of metals such as silver, aluminum, lithium, calcium, magnesium, and indium.

[0061] In the second specific embodiment, it can be Figure 10 As shown, the first electrode covers the side of the light-emitting functional layer, the first metal lead connects the side of the first electrode to the drain of the thin film transistor switch along the surface of the silicon dioxide insulating layer and through drilling a well; the second metal lead connects the side of the first electrode to the gate of the amplifying field effect transistor along the surface of the silicon dioxide insulating layer.

[0062] In the third specific embodiment, it can be Figure 11 As shown, the first electrode covers the side edges of the light-emitting functional layer and part of the silicon dioxide insulating layer on both sides, and extends to the gate of the amplifying field-effect transistor and the drain of the thin-film transistor switch; a first metal lead is drilled above the drain of the thin-film transistor switch, and the first metal lead connects the first electrode to the drain of the thin-film transistor switch.

[0063] It should be noted that in this embodiment, no second metal lead is required.

[0064] In another specific embodiment, the gate of the thin film transistor switch and the gate and second electrode of the amplifying field effect transistor are uniformly manufactured using the same material and at the same level.

[0065] It should be noted that when the gate of the thin-film transistor switch, the gate of the amplifying field-effect transistor, and the second electrode are fabricated together, they all use the same material and can all be electrodes. In specific applications, the gate of the thin-film transistor switch and the gate of the amplifying field-effect transistor can be fabricated together with either the first electrode or the second electrode, depending on the circumstances.

[0066] In this specific embodiment, the gate of the thin film transistor switch is connected to the scan lead, the data lead electrode is connected to the data lead, and the voltage source lead electrode is connected to the regulating voltage source.

[0067] It should be noted that the scan lead is used to select the light-emitting unit, and the data lead is used to control the brightness of the light-emitting unit.

[0068] In this specific embodiment, the light-emitting unit is a quantum dot light-emitting diode, and the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer, and an electron transport layer.

[0069] In another specific embodiment, the light-emitting unit is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer.

[0070] In this specific embodiment, in step S5, a light-emitting functional layer is prepared on the second electrode, comprising:

[0071] According to the type of the light-emitting functional layer, the film preparation is divided into one or more layers to form the light-emitting functional layer.

[0072] It should be noted that the type of light-emitting functional layer determines the number of layers and the preparation method, so it is necessary to adapt it to the material.

[0073] In a specific embodiment, the first semiconductor layer is semiconductor A silicon, the second conductive layer is a metal conductive layer, and the transparent conductive layer is an indium tin oxide conductive layer.

[0074] Advanced Silicon is a high-purity silicon material widely used in the microelectronics industry and is commonly used in semiconductor manufacturing.

[0075] In the light-emitting device prepared in an embodiment of the present invention, the drain of the thin-film transistor switch is connected to the gate of the amplifying field-effect transistor (both achieved by connecting to the first electrode), the source of the amplifying field-effect transistor is connected to a control voltage source, which is used to provide the required voltage to the source of the amplifying field-effect transistor, and the drain of the amplifying field-effect transistor is connected to the gate control electrode. When the data lead drives the selected light-emitting unit to emit light, the driving voltage of the data lead is also applied to the gate of the amplifying field-effect transistor. When the voltage applied by the control voltage source remains unchanged, the driving voltage changes the carrier concentration and conductivity in the channel of the amplifying field-effect transistor, thereby controlling the drain current of the amplifying field-effect transistor and causing the control gate voltage of the gate control electrode to change according to the change in the driving voltage. Through the configuration of the amplifying field-effect transistor, the embodiment of the present invention allows the amplifying field-effect transistor to determine the applied control gate voltage according to the driving voltage. At the same time, the driving voltage also determines the grayscale value of the light-emitting unit, thereby enabling the embodiment of the present invention to achieve adaptive gate voltage adjustment according to the change in grayscale value. Compared with the prior art that adapts to grayscale value changes through one-to-one gate voltage regulation, the embodiments of the present invention can use a common regulation voltage source for multiple light-emitting units and can also achieve adaptive gate voltage adjustment according to grayscale value changes, effectively reducing the complexity of the gate regulation circuit and saving energy.

[0076] In the embodiment of the present invention, the light-emitting unit, the thin film transistor switch and some components of the amplifying field effect transistor are placed on the same level and manufactured simultaneously using the same material, which greatly simplifies the manufacturing process and improves the manufacturing efficiency.

[0077] In summary, the embodiments of the present invention not only provide a light-emitting device capable of adaptively adjusting the gate voltage according to the change of the grayscale value when performing unified gate voltage regulation, but also simplify the manufacturing process and improve the manufacturing efficiency.

[0078] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0079] Each embodiment in this specification is described in a related manner. Similar parts between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences between the other embodiments. In particular, the system embodiment is generally similar to the method embodiment, so the description is relatively simple. For related parts, refer to the description of the method embodiment.

[0080] The above are only preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention are included in the scope of protection of the present invention.

Claims

1. A process for preparing a light-emitting device based on gate-controlled grayscale, characterized in that: The process comprises: Step S1: depositing a first semiconductor layer on a substrate and performing photolithography on the first semiconductor layer to form a first active layer pattern and a second active layer pattern; wherein the light-emitting device includes a light-emitting unit, a thin-film transistor switch, and an amplifying field-effect transistor, the first active layer is the active layer of the thin-film transistor switch, and the second active layer is the active layer of the amplifying field-effect transistor; Step S2: performing doping or coating on the first active layer pattern and the second active layer pattern to prepare the source and drain of the thin film transistor switch and the amplifying field effect transistor; Step S3, depositing a second conductive layer on the substrate, the source and drain of the thin-film transistor switch, and the source and drain of the amplifying field-effect transistor, and performing photolithography on the second conductive layer to form a gate control electrode, a voltage source lead electrode, and a data lead electrode of the light-emitting unit; wherein the gate control electrode is connected to the drain of the amplifying field-effect transistor, the voltage source lead electrode is mounted on the source of the amplifying field-effect transistor, and the data lead electrode is mounted on the source of the thin-film transistor switch; Step S4, coating a silicon dioxide insulating layer on the gate control electrode, the source and drain of the thin film transistor switch, and the source and drain of the amplifying field effect transistor, and performing photolithography on the silicon dioxide insulating layer to form a silicon dioxide insulating layer pattern; Step S5, preparing a second electrode on the silicon dioxide insulating layer pattern; and preparing a light-emitting functional layer on the second electrode; Step S6: depositing a transparent conductive layer on the silicon dioxide insulating layer and the light-emitting functional layer, and performing photolithography on the transparent conductive layer to form a first electrode, a gate of the thin film transistor switch, and a gate of the amplifying field effect transistor; Step S7: Use a first metal wire to connect the first electrode to the drain of the thin film transistor switch by drilling a well; use a second metal wire to connect the first electrode to the gate of the amplifying field effect transistor.

2. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, wherein: The first electrode covers the side of the light-emitting functional layer, and the first metal lead connects the side of the first electrode to the drain of the thin film transistor switch along the surface of the silicon dioxide insulation layer and through drilling; the second metal lead connects the side of the first electrode to the gate of the amplifying field effect transistor along the surface of the silicon dioxide insulation layer.

3. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, wherein: The first electrode covers the sides of the light-emitting functional layer and part of the two sides of the silicon dioxide insulating layer, and extends to the gate of the amplifying field-effect transistor and the drain of the thin-film transistor switch respectively; the first metal lead enters the drain of the thin-film transistor switch through a well, and the first metal lead connects the first electrode to the drain of the thin-film transistor switch.

4. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, wherein: The gate of the thin film transistor switch, the gate of the amplifying field effect transistor and the second electrode are uniformly manufactured using the same material and at the same layer.

5. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, wherein: The gate of the thin film transistor switch is connected to the scan lead, the data lead electrode is connected to the data lead, and the voltage source lead electrode is connected to the regulating voltage source.

6. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, wherein: The light-emitting unit is a quantum dot light-emitting diode, and the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer.

7. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, wherein: The light-emitting unit is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer.

8. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, wherein: In step S5, a light-emitting functional layer is prepared on the second electrode, comprising: According to the type of the light-emitting functional layer, the film preparation is divided into one or more times to form the light-emitting functional layer.

9. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, wherein: The first semiconductor layer is semiconductor A silicon, the second conductive layer is a metal conductive layer, and the transparent conductive layer is an indium tin oxide conductive layer.

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