Perovskite ink composition, perovskite ink and method of making the same, perovskite thin film and method of making and using the same
By using perovskite ink compositions containing solvents with different boiling points and passivators, perovskite thin films with high crystallinity and low defect density were prepared, solving the problem of high defect density in perovskite thin films, improving the production efficiency of large-area perovskite solar cells and reducing costs.
Patent Information
- Application Number
- CN202311162056.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-08
- Publication Date
- 2026-05-15
- Estimated Expiration
- 2043-09-08
AI Technical Summary
In existing technologies, perovskite thin films have high defect densities or are difficult to fabricate, which limits the development of large-area perovskite solar cells and increases production costs.
By using a perovskite ink composition containing mixed solvents and passivating agents with different boiling points, integrated passivation of the top and bottom interfaces can be achieved during the perovskite thin film preparation process through a top-to-bottom crystallization sequence, simplifying the process flow and reducing defect density.
It improves the crystallinity of perovskite films and reduces the defect state density, simplifies the fabrication process of large-area perovskite solar cells, and reduces production costs.
Smart Images
Figure CN119592135B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of perovskite solar cell technology, and more specifically, to a perovskite ink composition, a perovskite ink and its preparation method, a perovskite thin film and its preparation method and application. Background Technology
[0002] In recent years, perovskites have attracted extensive research in the field of thin-film optoelectronic materials and devices due to their advantages such as ultra-long carrier transport distance, high defect tolerance, and solution-processable technology. High-efficiency perovskite devices rely heavily on surface and interface defect passivation and small area (<0.1 cm²). 2 Perovskite solar cells have achieved efficiencies exceeding 25%, comparable to traditional crystalline silicon cells. However, the fabrication of large-area perovskite solar cells still faces significant challenges. Perovskite films prepared using techniques such as blade coating, inkjet printing, slot coating, or roll-to-roll printing are difficult to control in terms of nucleation and crystallization, resulting in low-quality perovskite films with high defect densities. Currently, in high-efficiency large-area perovskite module processes, passivation technology still relies on post-processing methods, which limits further large-area development of perovskite cells and increases costs due to the added steps in industrial production.
[0003] Based on the above, a simple and effective passivation method is designed, which is suitable for the preparation of large-area perovskite thin films. Reducing the defect density is an urgent technical problem to be solved. Summary of the Invention
[0004] The main objective of this invention is to provide a perovskite ink composition, perovskite ink and its preparation method, perovskite thin film and its preparation method and application, so as to solve the problems of high defect density or difficult preparation process of perovskite thin films in the prior art.
[0005] To achieve the above objectives, according to one aspect of the present invention, a perovskite ink composition is provided, the perovskite ink composition comprising: AX, BX2, a solvent and a passivating agent, wherein A represents a monovalent cation, B represents a divalent cation, and X represents a halide ion; the solvent comprises at least two organic solvents with different boiling points, and the solvent comprises at least two organic solvents with different solubilities for the passivating agent.
[0006] Furthermore, the boiling point of the organic solvent with the highest boiling point differs from that of the organic solvent with the lowest boiling point by 20 to 150°C.
[0007] Preferably, the solvent includes at least two of the following: dimethylformamide, dimethylacetamide, dimethyl sulfoxide, N-methylpyrrolidone, γ-butyrolactone, 2-methoxyethanol, acetonitrile, ethanol, methanol, isopropanol, chlorobenzene, and ethyl acetate.
[0008] Furthermore, the passivating agent includes any one or more of cesium acetate, cesium chloride, cesium iodide, cesium bromide, rubidium iodide, potassium chloride, 6TIC-4F, theophylline, caffeine, theobromine, 1-aminopyrene, and phenylethylamine halides;
[0009] Preferably, the molar ratio of passivating agent to AX is 1:1000 to 1:10;
[0010] Preferably, the concentration of the passivating agent in the solvent is 0.1–10 mol%.
[0011] Furthermore, the passivating agent includes any one or more of cesium acetate, cesium chloride, cesium iodide, cesium bromide, rubidium iodide, and potassium chloride, and the solvent includes at least one of dimethylformamide, dimethylacetamide, dimethyl sulfoxide, N-methylpyrrolidone, and γ-butyrolactone;
[0012] And / or, the passivating agent includes any one or more of 6TIC-4F, theophylline, caffeine, theobromine and 1-aminopyrene, and the solvent includes at least one of 2-methoxyethanol, acetonitrile, ethanol, methanol, isopropanol, chlorobenzene and ethyl acetate.
[0013] Furthermore, AX and BX2 can form ABX3 or A2(ABX3). n-1 BX4 structure; preferably, the mixture formed by the composition is a homogeneous solution.
[0014] According to another aspect of this application, a perovskite ink is provided, which is prepared from any of the compositions described above.
[0015] According to another aspect of this application, a method for preparing a perovskite thin film is provided, the method comprising: depositing the above-mentioned perovskite ink on a substrate, evaporating the solvent, and obtaining a perovskite thin film.
[0016] Furthermore, the perovskite ink can be applied using any one of the following methods: doctor blade coating, inkjet printing, slot coating, and roll-to-roll printing.
[0017] Preferably, the method for evaporating the solvent includes any one of heating, gas extraction, and laser-assisted annealing;
[0018] Optionally, when evaporating the solvent by heating, the heating temperature is 80–200°C.
[0019] According to another aspect of this application, a perovskite thin film is provided, which is prepared by any of the above-described preparation methods.
[0020] According to a fifth aspect of this application, a photovoltaic device is provided, the photovoltaic module comprising the aforementioned perovskite thin film.
[0021] The perovskite ink composition of this invention contains a perovskite precursor, a solvent, and a passivating agent. Because the solvent is a mixture of solvents with different boiling points and varying solubility for the same passivating agent, its volatile properties can be utilized during the preparation of perovskite thin films. By leveraging the top-to-bottom crystallization sequence during preparation, the passivating agent is integrated into the perovskite ink. This perovskite ink composition can be used to prepare perovskite thin films with high crystallinity and low defect state density. It can be used via methods such as blade coating, inkjet printing, slot coating, and roll-to-roll printing. Especially in the preparation of large-area perovskite solar cells, it can effectively improve production efficiency, simplify the process, and reduce production costs. Attached Figure Description
[0022] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:
[0023] Figure 1 A physical image of a perovskite thin film according to Embodiment 1 of the present invention is shown;
[0024] Figure 2 The PL spectra of the upper and lower surfaces of the perovskite thin films of Embodiment 1 and Comparative Example 1 according to the present invention are shown.
[0025] Figure 3 The PL spectra of the upper and lower surfaces of the perovskite thin films of Embodiment 2 and Comparative Example 1 according to the present invention are shown.
[0026] Figure 4 The PL spectra of the upper and lower surfaces of the perovskite thin films of Embodiment 3 and Comparative Example 1 according to the present invention are shown.
[0027] Figure 5 The PL spectra of the upper and lower surfaces of the perovskite thin films of Embodiment 4 and Comparative Example 2 according to the present invention are shown. Detailed Implementation
[0028] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the embodiments.
[0029] As analyzed in the background section of this application, the existing technology has problems such as high defect density of perovskite thin films or difficulty in implementing the preparation process. In order to solve this problem, this application provides a perovskite ink composition, perovskite ink and its preparation method, perovskite thin film and its preparation method and application.
[0030] According to a typical embodiment of this application, a perovskite ink composition is provided, the composition comprising: AX, BX2, a solvent and a passivating agent, wherein A represents a monovalent cation, B represents a divalent cation, and X represents a halide ion; the solvent comprises at least two organic solvents with different boiling points, and the solvent comprises at least two organic solvents with different solubilities for the passivating agent.
[0031] The perovskite ink composition of this application contains a perovskite precursor, a solvent, and a passivating agent. Because the solvent is a mixture of solvents with different boiling points and varying solubility for the same passivating agent, its volatile properties can be utilized during the preparation of perovskite thin films. By taking advantage of the top-to-bottom crystallization sequence during the preparation process, the passivating agent is incorporated into the perovskite ink. The perovskite ink formed by this composition can be used to prepare perovskite thin films with high crystallinity and low defect state density. It can be used by methods such as doctor blade coating, inkjet printing, slot coating, and roll-to-roll printing. Especially in the preparation of large-area perovskite solar cells, it can effectively improve production efficiency, simplify the process, and reduce production costs.
[0032] The solvents in the above compositions can be selected from existing technologies. Different boiling points result in different solubilities for the passivating agent in the composition, and good solubility with other components in the composition is required. In some preferred embodiments of this application, the boiling point difference between the organic solvent with the highest boiling point and the organic solvent with the lowest boiling point is 20–150°C, resulting in better integrated passivation of the top and bottom interfaces of the formed perovskite film. Exemplarily, the boiling point difference between the organic solvent with the highest boiling point and the organic solvent with the lowest boiling point is 20°C, 30°C, 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, or any range between the two.
[0033] To achieve a sequential evaporation of different solvents in the composition, enabling gradient evaporation and ensuring the passivating agent reaches a designated surface or forms a concentration gradient during evaporation, the single passivating agent in the composition is soluble in only one solvent, or has a significant solubility difference between the two solvents. In some embodiments of this application, the solubility of the single passivating agent in at least two organic solvents in the composition differs by a factor of 5 or more, such as 6, 7, 8, 9, 10, 11, 13, 15, 18, 20, 25, 30, 40, 50 times, or any range between the two. Researchers in this application have found that when the solubility of the single passivating agent in at least two organic solvents in the composition differs by a factor of 5 or more, the larger the solubility difference, the more pronounced the directional passivation effect; conversely, the smaller the difference, the easier it is to form a mixed gradient distribution.
[0034] Preferably, the solvent includes at least two of dimethylformamide (DMF), dimethylacetamide, dimethyl sulfoxide (DMSO), N-methylpyrrolidone, γ-butyrolactone, 2-methoxyethanol (2-ME), acetonitrile (ACN), ethanol, methanol, isopropanol (IPA), chlorobenzene, and ethyl acetate. The above solvents have good solubility for perovskite raw materials, and it is easy to select at least two solvents with different solubilities for a single passivating agent.
[0035] The passivating agents mentioned above can be selected from existing technologies without special requirements, including but not limited to any one or more of cesium acetate, cesium chloride, cesium iodide, cesium bromide, rubidium iodide, potassium chloride, 6TIC-4F, theophylline, caffeine, theobromine, 1-aminopyrene, and phenylethylamine halides. To further improve the passivation effect and overall performance of the perovskite film formed by the composition, in some embodiments of this application, the molar ratio of the passivating agent to AX is 1:1000 to 1:10, preferably 1:1000 to 1:100. In some embodiments of this application, the concentration of the passivating agent in the solvent is 0.1 to 10 mol%, preferably 0.1 to 10 mol%, which has a significant effect on improving the defect density of the perovskite film.
[0036] According to the principle of "like dissolves like," strongly polar molecules are easily soluble in strongly polar solvents, and weakly polar molecules are easily soluble in weakly polar solvents. Often, depending on the specific type of passivating agent, a solvent with good solubility is selected, and another one or more solvents with different boiling points and large differences in solubility are used in combination. This allows the passivating agent in the solvent with the lower boiling point to reach the surface first, while the passivating agent in the solvent with the higher boiling point to reach the bottom surface.
[0037] In some typical embodiments of this application, the passivating agent includes any one or more of cesium acetate, cesium chloride, cesium iodide, cesium bromide, rubidium iodide, and potassium chloride, and the solvent includes at least one of dimethylformamide, dimethylacetamide, dimethyl sulfoxide, N-methylpyrrolidone, and γ-butyrolactone. These solvents not only have good solubility for AX and BX2, but also have good solubility for the above-mentioned passivating agents. Organic solvents that are insoluble or have poor solubility for the above-mentioned passivating agents such as cesium acetate can be selected for combination use.
[0038] In some typical embodiments of this application, the passivating agent includes any one or more of 6TIC-4F, theophylline, caffeine, theobromine and 1-aminopyrene, and the solvent includes at least one of 2-methoxyethanol, acetonitrile, ethanol, methanol, isopropanol, chlorobenzene and ethyl acetate. These solvents have good solubility for AX and BX2, and are slightly less polar, making them easy to dissolve the passivating agent. Selecting one or more of these solvents can achieve a better passivation effect.
[0039] The composition of this application is not limited in terms of the final perovskite formed. For example, it can be lead-based perovskite, lead-free perovskite, and bis-perovskite, with perovskite structures including three-dimensional ABX3 and all two-dimensional perovskites. The precursors AX and BX2 that form these perovskite structures in the composition can be selected from the prior art without special requirements. Those skilled in the art can select the appropriate perovskite precursors according to specific needs, which will not be described in detail here.
[0040] Preferably, the mixture formed by the composition is a homogeneous solution.
[0041] According to another typical embodiment of this application, a perovskite ink is provided, which is prepared from any of the above-described compositions. Because the solvent of this perovskite ink is a mixture of solvents with different boiling points, it can utilize the volatility of the solvent during the preparation of perovskite thin films. By taking advantage of the top-to-bottom crystallization sequence during the preparation process, the passivating agent is integrated into the perovskite ink, achieving integrated passivation of the top and bottom interfaces during the perovskite crystallization process. This avoids the possibility of poor wettability after conventional bottom passivation and enhances the interaction force of the passivating molecules on the perovskite surface. The perovskite ink formed by this composition can be applied to the preparation of perovskite thin films with high crystallinity and low defect state density, and can be used by methods such as doctor blade coating, inkjet printing, slot coating, and roll-to-roll printing. Especially in the preparation of large-area perovskite solar cells, it can effectively improve production efficiency, simplify the process flow, and reduce production costs.
[0042] Those skilled in the art can readily prepare perovskite ink from the above-mentioned perovskite ink composition using existing methods. For example, the method for preparing perovskite ink from the above-mentioned perovskite ink composition is as follows: after mixing AX, BX2, the solvent, and the passivating agent in the composition, the mixture is continuously stirred for 1–24 hours to obtain perovskite ink.
[0043] According to another typical embodiment of this application, a method for preparing a perovskite thin film is provided, the method comprising: depositing the above-mentioned perovskite ink on a substrate, evaporating the solvent, and obtaining a perovskite thin film.
[0044] This preparation method utilizes the mixed solvents with different boiling points of the aforementioned perovskite ink, leveraging the solvent's volatility during perovskite film preparation. During the top-to-bottom crystallization process, the passivating agent is integrated into the perovskite ink, achieving integrated passivation of the top and bottom interfaces as the perovskite crystallizes. Because the bottom passivation and perovskite are prepared integrally, the potential for poor wettability after conventional bottom passivation is avoided. Furthermore, the integrated preparation of the top passivation and perovskite enhances the interaction force of the passivation molecules on the perovskite surface. This method can be applied to the preparation of highly crystalline and gradient-doped perovskite films and can be used via methods such as doctor blade coating, inkjet printing, slot coating, and roll-to-roll printing. Especially in the preparation of large-area perovskite solar cells, it can effectively improve production efficiency, simplify the process, and reduce production costs.
[0045] In some embodiments of this application, the perovskite ink application method includes any one of blade coating, inkjet printing, slot coating, and roll-to-roll printing, which facilitates the improvement of perovskite film production efficiency. In particular, it is more effective in the preparation of large-area perovskite solar cells, not only effectively reducing defect density but also simplifying the process and significantly reducing production costs.
[0046] The method for evaporating the solvent can be selected from existing technologies, including but not limited to heating, gas extraction, and laser-assisted annealing. In some embodiments of this application, when the solvent is evaporated by heating, the heating temperature is 80–200°C, which results in high evaporation efficiency and good passivation effect, which is beneficial to further improving the overall performance of the prepared perovskite thin film.
[0047] According to another embodiment of this application, a perovskite thin film is provided, which is prepared by any of the above-described preparation methods. This perovskite thin film utilizes the characteristic of a mixed solvent with different boiling points of the perovskite ink, which allows the solvent to evaporate during the perovskite thin film preparation process. During the perovskite thin film preparation process, a passivating agent is integrated into the perovskite ink in a top-to-bottom crystallization sequence, achieving integrated passivation of the top and bottom interfaces during the perovskite crystallization process. Because the bottom passivation and perovskite are prepared integrally, the possibility of poor wettability after bottom passivation is avoided; and because the top passivation and perovskite are prepared integrally, the interaction force of the passivation molecules on the perovskite surface is enhanced. The above-described perovskite thin film can be prepared using various methods and is particularly suitable for the production of large-area perovskite solar cells.
[0048] According to another embodiment of this application, a photovoltaic device is provided, which includes the perovskite thin film described above.
[0049] The photovoltaic device of this application utilizes the aforementioned perovskite thin film. Because the top and bottom interfaces are integrated and passivated during the perovskite crystallization process, the possibility of poor wettability after bottom passivation is avoided. This enhances the interaction force of passivation molecules on the perovskite surface, resulting in a lower defect density and significantly improving the performance of the photovoltaic device. Furthermore, the aforementioned perovskite thin film preparation process is simple, significantly reducing the production cost of photovoltaic devices, and is particularly suitable for the production of large-area perovskite photovoltaic devices.
[0050] The aforementioned photovoltaic devices include nip structures and pin structures. The specific composition and fabrication methods can be found in existing technologies and will not be elaborated here.
[0051] The beneficial effects that this application can achieve will be further illustrated below with reference to embodiments and comparative examples.
[0052] Example 1
[0053] At room temperature, 0.8 mmol of formamidine (FAI), 0.2 mmol of cesium iodide (CsI), 0.4 mmol of lead iodide (PbI2), 0.6 mmol of lead bromide (PbBr2), and 0.01 mmol of cesium acetate (CsAc, 1.92 mg) were mixed and added to 1 ml of a mixed solvent of DMF:DMSO:2-ME with a volume ratio of 8:1:1, and stirred continuously for 1 h to obtain FA. 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 3. Initial Perovskite Ink. The above perovskite ink was coated onto a glass substrate, and then annealed on a hot plate at 100°C for 10 min to obtain a perovskite film, as shown below. Figure 1 As shown. The photoluminescence (PL) spectra of its upper and lower surfaces are as follows. Figure 2 As shown.
[0054] Example 2
[0055] At room temperature, 0.8 mmol of formamidinium iodide (FAI), 0.2 mmol of cesium iodide (CsI), 0.4 mmol of lead iodide (PbI2), 0.6 mmol of lead bromide (PbBr2), and 0.01 mmol of theophylline (1.80 mg) were mixed and added to 1 ml of a mixed solvent with an ACN:2-ME volume ratio of 1:1. The mixture was stirred continuously for 1 h to obtain FA. 0.8 Cs 0.2 Pb(I 0.6 Br 0.43. Initial Perovskite Ink. The above perovskite ink was coated onto a glass substrate, and then annealed on a hot stage at 100°C for 10 min to obtain a perovskite thin film. The photoluminescence (PL) spectra of its upper and lower surfaces are as follows: Figure 3 As shown.
[0056] Example 3
[0057] At room temperature, 0.8 mmol of formamidinium iodide (FAI), 0.2 mmol of cesium iodide (CsI), 0.4 mmol of lead iodide (PbI2), 0.6 mmol of lead bromide (PbBr2), 0.01 mmol of cesium acetate (CsAc, 1.92 mg), and 0.01 mmol of theophylline (1.80 mg) were mixed and added to 1 ml of a mixed solvent of DMF:DMSO:ACN:2-ME in a volume ratio of 7:1:1:1, and stirred continuously for 1 h to obtain FA. 0.8 Cs 0.2 Pb(I 0.6 Br 0.4 3. Initial Perovskite Ink. The above perovskite ink was coated onto a glass substrate, and then annealed on a hot stage at 100°C for 10 min to obtain a perovskite thin film. The photoluminescence (PL) spectra of its upper and lower surfaces are as follows: Figure 4 As shown.
[0058] Example 4
[0059] At room temperature, 2.7 mmol of methyl iodide (MAI), 1.8 mmol of amyl iodide (AAI), 3.6 mmol of lead iodide (PbI2), and 0.001 mmol of 6TIC-4F (1.57 mg) were mixed and added to 1 ml of a mixed solvent of DMF:DMSO:IPA in a volume ratio of 90:3:7, and stirred continuously for 1 h to obtain (AA)2MA3Pb4I. 13 Initial perovskite ink. The above perovskite ink was coated onto a glass substrate and then annealed on a hot stage at 100°C for 10 min to obtain a perovskite thin film. The photoluminescence (PL) spectra of its upper and lower surfaces are as follows: Figure 5 As shown.
[0060] Comparative Example 1
[0061] At room temperature, 0.8 mmol of formamidine (FAI), 0.2 mmol of cesium iodide (CsI), 0.4 mmol of lead iodide (PbI2), and 0.6 mmol of lead bromide (PbBr2) were mixed and added to 1 ml of a mixed solvent of DMF and DMSO in a 4:1 ratio. The mixture was stirred continuously for 20 min to obtain FA. 0.8 Cs 0.2 Pb(I0.6 Br 0.4 3. Initial Perovskite Ink. The above perovskite ink was coated onto a glass substrate using a slit coating method, and then annealed on a hot stage at 100°C for 10 min to obtain a perovskite thin film. The photoluminescence (PL) spectra of its upper and lower surfaces are as follows: Figure 2 or Figure 3 or Figure 4 As shown.
[0062] Comparative Example 2
[0063] At room temperature, 2.7 mmol of methyl iodide (MAI), 1.8 mmol of amyl iodide (AAI), and 3.6 mmol of lead iodide (PbI2) were mixed and added to 1 ml of a mixed solvent of DMF:DMSO:IPA in a volume ratio of 90:3:7, and stirred continuously for 1 h to obtain (AA)2MA3Pb4I 13 Initial perovskite ink. The above perovskite ink was coated onto a glass substrate and then annealed on a hot stage at 100°C for 10 min to obtain a perovskite thin film. The photoluminescence (PL) spectra of its upper and lower surfaces are as follows: Figure 5 As shown.
[0064] The perovskite thin films prepared in the above embodiments and comparative examples were tested for PL spectra, and the peak photon counts of the PL intensity on the upper and lower surfaces of the perovskite thin films are shown in Table 1 below.
[0065] Table 1
[0066]
[0067] As can be seen from the above description, the embodiments of the present invention achieve the following technical effects: the perovskite ink composition contains a perovskite precursor, a solvent, and a passivating agent. Since the solvent is a mixture of solvents with different boiling points and different solubilities for the same passivating agent, its volatile properties can be utilized during the preparation of perovskite thin films. By utilizing the top-to-bottom crystallization sequence during the preparation process, the passivating agent is integrated into the perovskite ink. The perovskite ink formed by this composition can be applied to the preparation of highly crystalline and gradient-doped perovskite thin films and can be used by methods such as blade coating, inkjet printing, slot coating, and roll-to-roll printing. Especially in the preparation of large-area perovskite solar cells, it can effectively improve production efficiency, simplify the process, and reduce production costs.
[0068] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.
Claims
1. A perovskite ink composition, characterized in that, include: AX, BX2, solvent and passivating agent, wherein A represents a monovalent cation, B represents a divalent cation, and X represents a halide ion; the solvent includes at least two organic solvents with different boiling points, and the solvent includes at least two organic solvents with different solubilities for the passivating agent; The boiling point of the organic solvent with the highest boiling point differs from that of the organic solvent with the lowest boiling point by 20 to 150°C; the solvent includes at least two of the following: dimethylformamide, dimethylacetamide, dimethyl sulfoxide, N-methylpyrrolidone, γ-butyrolactone, 2-methoxyethanol, acetonitrile, ethanol, methanol, isopropanol, chlorobenzene, and ethyl acetate.
2. The composition according to claim 1, characterized in that, The passivating agent includes any one or more of cesium acetate, cesium chloride, cesium iodide, cesium bromide, rubidium iodide, potassium chloride, 6TIC-4F, theophylline, caffeine, theobromine, 1-aminopyrene, and phenylethylamine halides.
3. The composition according to claim 1, characterized in that, The molar ratio of the passivating agent to the AX is 1:1000 to 1:
10.
4. The composition according to claim 1, characterized in that, The concentration of the passivating agent in the solvent is 0.1~10 mol.
5. The composition according to claim 2, characterized in that, The passivating agent includes any one or more of cesium acetate, cesium chloride, cesium iodide, cesium bromide, rubidium iodide, and potassium chloride, and the solvent includes at least one of dimethylformamide, dimethylacetamide, dimethyl sulfoxide, N-methylpyrrolidone, and γ-butyrolactone. And / or, the passivating agent includes any one or more of 6TIC-4F, theophylline, caffeine, theobromine and 1-aminopyrene, and the solvent includes at least one of 2-methoxyethanol, acetonitrile, ethanol, methanol, isopropanol, chlorobenzene and ethyl acetate.
6. The composition according to claim 1, characterized in that, The AX and BX2 can form ABX3 or A2(ABX3). n-1 BX4 structure.
7. The composition according to claim 1, characterized in that, The mixture formed by the composition is a homogeneous solution.
8. A perovskite ink, characterized in that, It is prepared from the composition according to any one of claims 1 to 7.
9. A method for preparing a perovskite thin film, characterized in that, The perovskite ink described in claim 8 is disposed on a substrate, and the solvent is evaporated to obtain a perovskite thin film.
10. The preparation method according to claim 9, characterized in that, The perovskite ink can be applied using any one of the following methods: doctor blade coating, inkjet printing, slot coating, and roll-to-roll printing.
11. The preparation method according to claim 9, characterized in that, The method for evaporating the solvent includes any one of heating, gas extraction, and laser-assisted annealing.
12. The preparation method according to claim 11, characterized in that, When the solvent is evaporated by heating, the heating temperature is 80~200℃.
13. A perovskite thin film, characterized in that, It is prepared by the preparation method according to any one of claims 9 to 12.
14. A photovoltaic device, characterized in that, Contains the perovskite thin film as described in claim 13.