A broadband microwave waveband absorber

Abstract

The application discloses a broadband microwave waveband wave absorber and relates to the technical field of wave absorbers.The wave absorber comprises a microstructure unit layer, and the microstructure unit layer comprises a basic structure.The outer periphery of the basic structure comprises a plurality of first triangular structures.Second triangular structures are arranged outwardly on both sides of the first triangular structures.The middle part of the basic structure is provided with a hole.The outer periphery of the hole comprises a plurality of first triangular holes.Second triangular holes are arranged outwardly on both sides of the first triangular holes.Third triangular holes are arranged outwardly on both sides of the second triangular holes.Fourth triangular holes and fifth triangular holes are arranged outwardly on both sides of the first triangular holes, and the fourth triangular holes and the fifth triangular holes are respectively located on both sides of the second triangular holes.In the application, the wave absorber has the broadband absorption characteristic and high absorption rate through the design of the microstructure unit layer.

Description

Technical Field

[0001] The present invention relates to the technical field of absorbers, and in particular to a broadband microwave band absorber. Background Art

[0002] Electromagnetic waves in the microwave band (gigahertz band) have some special properties, which have led to their widespread application and development in communications and wireless technologies, radar systems, radio astronomy, and medical imaging technology. The frequency range of the microwave band in the electromagnetic spectrum is usually 1 microwave to 30 microwaves, corresponding to a wavelength range of approximately 10 cm to 1 cm. In order to effectively control and utilize electromagnetic waves, metamaterial absorbers have become an important technical means.

[0003] Metamaterial absorbers utilize special structures and materials to convert electromagnetic wave energy incident on their surfaces into other forms of energy and dissipate it, thereby achieving absorption and attenuation of electromagnetic waves. Currently known metamaterial absorbers often have multiple absorption peaks, but there are certain limitations on the absorption and attenuation of electromagnetic waves across a wide frequency band.

[0004] Therefore, people are in urgent need of a broadband microwave absorber with broadband absorption characteristics and high absorption rate. Summary of the Invention

[0005] The purpose of the present invention is to provide a broadband microwave absorber to solve the problems existing in the above-mentioned prior art. By designing the microstructure unit layer, it has broadband absorption characteristics and high absorption rate.

[0006] To achieve the above objectives, the present invention provides the following solution: The present invention provides a broadband microwave band absorber, comprising a plurality of absorbing units, wherein the absorbing units include a microstructure unit layer that performs ohmic loss on electromagnetic waves, wherein the microstructure unit layer includes a base structure, the periphery of the base structure includes a plurality of first triangular structures, and second triangular structures are provided on both sides of the first triangular structures extending outwardly. A hole is provided in the middle of the base structure, and the periphery of the hole includes a plurality of first triangular holes, second triangular holes are provided on both sides of the first triangular holes extending outwardly, third triangular holes are provided on both sides of the second triangular holes extending outwardly, fourth and fifth triangular holes are provided on both sides of the first triangular hole extending outwardly, and the fourth and fifth triangular holes are respectively located on both sides of the second triangular hole.

[0007] Preferably, the base structure is made of indium tin oxide.

[0008] Preferably, an octagonal structure is connected inside the hole.

[0009] Preferably, the thickness of the microstructure unit layer is 0.01 mm.

[0010] Preferably, the wave absorbing unit further comprises a dielectric layer for performing dielectric loss on electromagnetic waves, and the dielectric layer is laminated to the microstructure unit layer.

[0011] Preferably, the dielectric layer is made of quartz.

[0012] Preferably, the thickness of the dielectric layer is 3-5 mm.

[0013] Preferably, the wave absorbing unit further comprises a conductive reflective layer for reflecting electromagnetic waves, and the conductive reflective layer is laminated on a side of the dielectric layer away from the microstructure unit layer.

[0014] Preferably, the conductive reflective layer is made of copper.

[0015] Preferably, the thickness of the conductive reflective layer is 0.1-0.2 mm.

[0016] Compared with the prior art, the present invention mainly achieves the following technical effects:

[0017] By setting the peripheral shape of the basic structure of the microstructure unit layer and designing the internal holes, the absorber using it can maintain a high absorption rate within a wide-band microwave band. That is, the absorber using it has broadband absorption characteristics and a high absorption rate, and is suitable for applications in the fields of electromagnetic wave interference, shielding and isolation.

[0018] Compared with the prior art, other solutions of the present invention have achieved the following technical effects:

[0019] The method of digging a hole and incorporating an octagonal structure can improve absorption performance, increase the duty cycle, and improve bandwidth. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0021] Figure 1 Schematic diagram of the structure of the microstructure unit layer of the broadband microwave absorber in an embodiment of the present invention;

[0022] Figure 2 Schematic diagram of the arrangement of multiple absorbing units of a broadband microwave absorber according to an embodiment of the present invention;

[0023] Figure 3Schematic diagram of the structure of the first triangular hole, the second triangular hole, the third triangular hole, the fourth triangular hole and the fifth triangular hole in an embodiment of the present invention;

[0024] Figure 4 is a graph showing absorption characteristics of a broadband microwave absorber in the microwave band according to an embodiment of the present invention;

[0025] Among them, 1. Absorbing unit; 2. Microstructure unit layer; 3. Basic structure; 4. First triangular structure; 5. Second triangular structure; 6. Hole; 7. First triangular hole; 8. Second triangular hole; 9. Third triangular hole; 10. Fourth triangular hole; 11. Fifth triangular hole; 12. Octagonal structure; 13. Dielectric layer. DETAILED DESCRIPTION

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0027] The purpose of the present invention is to provide a broadband microwave absorber to solve the problems existing in the prior art. By designing the microstructure unit layer, the absorber has broadband absorption characteristics and high absorption rate.

[0028] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0029] like Figures 1 to 4As shown, a broadband microwave band absorber is provided, comprising a plurality of absorbing units 1, which are arranged in an array. The absorbing unit 1 comprises a microstructure unit layer 2 for performing ohmic loss on electromagnetic waves. The microstructure unit layer 2 comprises a base structure 3. The periphery of the base structure 3 comprises a plurality of first triangular structures 4. Second triangular structures 5 are provided on both sides of the first triangular structures 4 extending outward. A hole 6 is provided in the middle of the base structure 3. The periphery of the hole 6 comprises a plurality of first triangular holes 7. Second triangular holes 8 are provided on both sides of the first triangular holes 7 extending outward. The second triangular holes 8 A third triangular hole 9 is provided on both sides extending outward, and a fourth triangular hole 10 and a fifth triangular hole 11 are provided on both sides extending outward. The fourth triangular hole 10 and the fifth triangular hole 11 are respectively located on both sides of the second triangular hole 8. By setting the peripheral shape of the base structure 3 of the microstructure unit layer 2 and designing the internal holes 6, the absorber using it can maintain a high absorption rate in a broadband microwave band, that is, the absorber using it has broadband absorption characteristics and a high absorption rate, and is suitable for applications in the fields of electromagnetic wave interference, shielding and isolation.

[0030] In this embodiment, the number of the first triangular structures 4 and the number of the first triangular holes 7 are both 6, and they are evenly arranged along the circumference.

[0031] In this embodiment, the sharp corners of adjacent first triangular structures 4 that are close to each other are overlapped, and the sharp corners of adjacent first triangular holes 7 that are close to each other are overlapped.

[0032] In this embodiment, the material of the basic structure 3 is indium tin oxide (ITO), specifically ITO with a resistivity of 100 ohms, and the period of the periodic structure is 10; in other embodiments, the material of the basic structure 3 can be selected from other materials that can achieve ohmic loss of electromagnetic waves, such as copper.

[0033] The hole 6 is inscribed with an octagonal structure 12, which can improve the absorption performance, increase the duty cycle, and improve the bandwidth. In this embodiment, the inscribed structure is a regular octagonal structure.

[0034] The thickness of the microstructure unit layer 2 is 0.005-0.015 mm, and the specific value selected in this embodiment is 0.01 mm.

[0035] The wave absorbing unit 1 further includes a dielectric layer 13 for performing dielectric loss on electromagnetic waves. The dielectric layer 13 is bonded to the microstructure unit layer 2 .

[0036] In this embodiment, the material of the dielectric layer 13 is quartz, specifically quartz with a dielectric constant of 3.5. In other embodiments, the material of the dielectric layer 13 can be other materials that can achieve dielectric loss of electromagnetic waves, such as polyimide.

[0037] The thickness of the medium layer 13 is 3-5mm, and the specific value selected in the embodiment is 3.3583mm.

[0038] The absorbing unit 1 further comprises a conductive reflection layer for reflecting electromagnetic waves, which is attached to the side of the medium layer 13 away from the microstructure unit layer 2, and improves the absorption rate of electromagnetic waves by reflecting electromagnetic waves.

[0039] The material of the conductive reflection layer in the embodiment is copper, and other materials that can realize conduction and reflect electromagnetic waves, such as nickel, can also be selected in other embodiments.

[0040] The thickness of the conductive reflection layer is 0.1-0.2mm, and the specific value selected in the embodiment is 0.16mm.

[0041] The medium layer 13 and the conductive reflection layer are shared by the plurality of absorbing units 1 in the embodiment.

[0042] The wide-band microwave waveband absorber in the embodiment is simulated and tested by using the CST microwave studio, and the results show that the absorber can achieve an absorption rate of more than 90% in the 7.6-14.75 microwave waveband range, which indicates that the absorber exhibits good absorption performance in a wide frequency range and is suitable for microwave waveband applications.

[0043] Any adaptive changes according to actual needs are within the protection scope of the present application.

[0044] It should be noted that, for those skilled in the art, it is obvious that the present application is not limited to the details of the above exemplary embodiments, and the present application can be implemented in other specific forms without departing from the spirit or essential characteristics of the present application. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting, and the scope of the present application is defined by the appended claims rather than the above description, and therefore all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present application. Any reference signs in the claims should not be considered as limiting the claims involved.

[0045] The principles and implementation modes of the present application are described by using specific examples in the present application, and the above embodiment descriptions are only used to help understand the method of the present application and its core idea; at the same time, for those skilled in the art, according to the idea of the present application, the specific implementation modes and application ranges will be changed. In view of the above, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A broadband microwave absorber, characterized in that: The invention comprises a plurality of absorbing units, each of which comprises a microstructure unit layer that performs ohmic loss on electromagnetic waves, wherein the microstructure unit layer comprises a base structure, the periphery of the base structure comprises a plurality of first triangular structures, and second triangular structures are provided on both sides of the first triangular structure extending outwardly. A hole is provided in the middle of the base structure, and the periphery of the hole comprises a plurality of first triangular holes, second triangular holes are provided on both sides of the first triangular hole extending outwardly, third triangular holes are provided on both sides of the second triangular hole extending outwardly, fourth and fifth triangular holes are provided on both sides of the first triangular hole extending outwardly, and the fourth and fifth triangular holes are respectively located on both sides of the second triangular hole. The number of the first triangular structures is the same as the number of the first triangular holes, and they are evenly arranged along the circumference; An octagonal structure is connected inside the excavated hole.

2. The broadband microwave absorber according to claim 1, characterized in that: The material of the basic structure is indium tin oxide.

3. The broadband microwave absorber according to claim 1, characterized in that: The thickness of the microstructure unit layer is 0.01 mm.

4. The broadband microwave absorber according to claim 1, characterized in that: The wave absorbing unit further includes a dielectric layer for performing dielectric loss on electromagnetic waves, and the dielectric layer is bonded to the microstructure unit layer.

5. The broadband microwave absorber according to claim 4, characterized in that: The material of the dielectric layer is quartz.

6. The broadband microwave absorber according to claim 4, characterized in that: The thickness of the dielectric layer is 3-5 mm.

7. The broadband microwave absorber according to claim 4, characterized in that: The wave absorbing unit further comprises a conductive reflective layer for reflecting electromagnetic waves, and the conductive reflective layer is laminated on a side of the dielectric layer away from the microstructure unit layer.

8. The broadband microwave absorber according to claim 7, characterized in that: The conductive reflective layer is made of copper.

9. The broadband microwave absorber according to claim 7, characterized in that: The thickness of the conductive reflective layer is 0.1-0.2 mm.

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