A display structure

Abstract

The application provides a display structure, which comprises a narrow-band absorber structure and a wide-band absorber structure. The wide-band absorber structure comprises a film formed by a dielectric layer and a metal layer. The metal layer is multilayered and has a loss and a K value greater than a preset threshold. The wide-band absorber structure is located above the narrow-band absorber structure and coupled with the narrow-band absorber structure to generate bright colors. In the wide-band absorber structure, the multilayered metal layer with a high K value can inhibit reflectivity of non-target wave bands, so that rich colors can be generated and the purity of the colors can be improved. The structure assembly has the advantages of simple structure, resistance to environmental influence, angle insensitivity and the like.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display structure. BACKGROUND

[0002] Nanostructures have attracted much attention due to their diverse applications in optical devices, especially in creating structural color filters and perfect absorbers. By tuning the parameters of these structures, one can precisely control their spectral response, including transmission, reflection, and absorption characteristics. Color filters play a key role in multiple fields, including display / imaging devices, color printing, organic solar cells, and light-emitting devices. These devices traditionally rely on pigment dyes or pigments to produce color, but these materials are sensitive to high temperatures, ultraviolet light, and chemicals. Nanostructured color filters have emerged as an alternative due to their high resolution, high efficiency, and sustainability.

[0003] Based on plasmonic, all-dielectric metasurfaces, and guided-mode resonant nanostructures, high-efficiency structural colors can be generated. However, these structures usually rely on the surface plasmon resonance of metallic nanostructures or the scattering of metasurfaces, but the complex manufacturing process limits their applications. Therefore, lithography-free thin-film multilayer structures are favored due to their simple structure, high efficiency, and good scalability. In particular, asymmetric Fabry-Perot (F-P) nanocavities based on the co-configuration of broadband absorbers and narrowband absorbers have attracted much attention due to their bright colors and angle insensitivity. However, the reflectivity in the non-target peak region based on this structure is generally high, resulting in low color purity.

[0004] In existing display technology, the display structure composed of broadband absorption structures and narrowband absorption structures composed of dielectric layers and metal materials has very high reflectivity in the non-target peak region, which will greatly hinder its further application. Therefore, it is of great practical significance to design a display structure with high color purity. SUMMARY

[0005] The present application provides a display structure to solve the defect that the display structure based on asymmetric F-P nanocavity in the prior art has high reflectivity in the non-target peak region, resulting in low color purity, and to achieve the purpose of suppressing the reflection of non-target waveband by introducing multiple layers of metal into the F-P cavity to improve the color purity.

[0006] The present application provides a display structure, comprising:

[0007] a broadband absorber structure;

[0008] The wideband absorber structure includes a film composed of a dielectric layer and a metal layer, the metal layer is a plurality of layers, has a loss, and a K value is greater than a preset threshold value, the wideband absorber structure is located above the narrowband absorber structure and is coupled with the narrowband absorber structure to generate a bright color.

[0009] The metal layer includes a first metal layer and a second metal layer, and the second metal layer is located above the first metal layer.

[0010] The first metal layer is Ag, and the thickness of the first metal layer ranges from 10 nm to 100 nm.

[0011] The second metal layer is a Ge, Si or W metal material with a K value greater than the preset threshold value, and the thickness of the second metal layer ranges from 5 nm to 20 nm.

[0012] The display structure further includes a third metal layer, and the third metal layer is located above the second metal layer.

[0013] The third metal layer is a Ti, Si or W metal material with a K value greater than the preset threshold value, and the thickness of the third metal layer ranges from 5 nm to 20 nm.

[0014] The thickness of each metal layer is less than 30 nm.

[0015] The display structure further includes a third metal layer, and the third metal layer is located above the second metal layer.

[0016] The first dielectric layer is Ta2O3.3, and the thickness of the first dielectric layer is 6 nm.

[0017] The second dielectric layer is a Ta2O3.5, oxide of Ta, TiO2 or SiO2 material with a K value of 0, and the thickness of the second dielectric layer ranges from 4 nm to 500 nm.

[0018] The narrowband absorber structure includes, from bottom to top, a reflective layer, a third dielectric layer, a fourth dielectric layer and the first metal layer.

[0019] The reflective layer is Ag, and the thickness of the reflective layer is greater than 50 nm.

[0020] The third dielectric layer is Ta2O3.3, and the thickness of the third dielectric layer is 6nm;

[0021] The fourth dielectric layer is Ta2O3.5, oxide of Ta, TiO2 or SiO2 or the like material with K value of 0, and the thickness of the fourth dielectric layer varies in the range of 10nm to 1 micron;

[0022] The first metal layer is Ag, and the thickness of the first metal layer varies in the range of 10nm to 100nm.

[0023] The display structure provided by the application adopts multiple layers of metal layers with high K value in the broadband absorber structure to construct an asymmetric Fabry-Perot nanocavity based on the broadband absorber structure and the narrowband absorber structure, and the display structure based on the nanocavity can inhibit the reflectivity of non-target wave bands to produce rich colors and improve the purity of the colors, and the structural components have the advantages of simple structure, not easy to be affected by the environment, angle insensitivity and the like. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are some embodiments of the application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0025] Figure 1 is a schematic diagram of the display structure provided by the application;

[0026] Figure 2 is a spectral diagram of the broadband absorber structure in the display structure provided by the application;

[0027] Figure 3 is an optical constant N, K value diagram of the first dielectric layer 107 Ta2O3.3 in the display structure provided by the embodiment;

[0028] Figure 4 is an optical constant N, K value diagram of the second dielectric layer 108 Ta2O3.5 in the display structure provided by the embodiment;

[0029] Figure 5 is a spectral diagram of the narrowband absorber structure in the display structure provided by the embodiment and a spectral diagram of the coupling of the broadband and narrowband structures;

[0030] Figure 6 is a spectral diagram of the coupling of the broadband and narrowband structures in the display structure provided by the embodiment with the thickness of the bottom layer Ta2O3.5 varying.

[0031] Reference signs:

[0032] 101: reflective layer; 102: third dielectric layer; 103: fourth dielectric layer; 104: first metal layer; 105: second metal layer; 106: third metal layer; 107: first dielectric layer; 108: second dielectric layer. DETAILED DESCRIPTION

[0033] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be described clearly and completely below in conjunction with the drawings in the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the protection scope of the present application.

[0034] The present application will be described below in conjunction with Figure 1 A display structure of the present application comprises:

[0035] a narrow-band absorber structure;

[0036] a wide-band absorber structure comprising a film composed of a dielectric layer and a metal layer, the metal layer being a plurality of layers, having a loss, and a K value greater than a preset threshold value, the wide-band absorber structure being located above the narrow-band absorber structure and coupled with the narrow-band absorber structure to produce a bright color.

[0037] The display structure in the present embodiment mainly comprises a wide-band absorber structure and a narrow-band absorber structure, which are combined from top to bottom in the order of the wide-band absorber structure and the narrow-band absorber structure.

[0038] The wide-band absorber structure is a film composed of a dielectric and a plurality of metal layers with a high K value, which is designed to form a wide-band absorber and is mainly used to be coupled with the narrow-band absorber structure to produce a bright color, and is stable in structure, not easy to be oxidized and not easy to be affected by temperature.

[0039] The wide-band absorber structure is composed of a plurality of metal layers, the metal layers of the structure being two or more, the thickness of each metal layer being not more than 30 nm, and each metal layer being made of a metal material with a loss, i.e. an extinction coefficient not being 0. Compared with the display structure composed of a traditional wide-band absorber structure and a narrow-band absorber structure, this design can better improve the color purity. By introducing a plurality of metal layers into the F-P cavity to suppress the reflection of non-standard objective wave bands, the color purity is improved.

[0040] Through this design, the color displayed by the display structure based on the wide-band absorber structure and the narrow-band absorber structure has high color purity, so as to meet the demand for high color purity based on the reflective display market and the like.

[0041] In general, the embodiment adopts a brand-new display structure design idea, and successfully develops a display structure that can inhibit the high reflectivity of non-target wavebands. This technical strategy overcomes the inherent limitations of existing structures and has great significance for technical progress, opening up new possibilities for the further development of display technology.

[0042] The embodiment uses multiple layers of metal layers with high K values in the broadband absorber structure to construct an asymmetric Fabry-Perot nanocavity based on the combined configuration of broadband absorber structures and narrowband absorber structures. The display structure based on the nanocavity can inhibit the reflectivity of non-target wavebands to produce rich colors and improve color purity. The structure component has the advantages of simple structure, resistance to environmental influence, and angle insensitivity.

[0043] On the basis of the above-mentioned embodiment, the metal layer in the embodiment includes a first metal layer 104 and a second metal layer 105, and the second metal layer 105 is located above the first metal layer 104.

[0044] The metal layer in the broadband absorber structure is two or more layers. The broadband absorber structure in the embodiment includes two metal layers, i.e., a first metal layer 104 and a second metal layer 105.

[0045] On the basis of the above-mentioned embodiment, the first metal layer 104 in the embodiment is Ag, and the thickness of the first metal layer 104 varies within the range of 10 nm to 100 nm.

[0046] The second metal layer 105 is a metal material such as Ge, Si, or W with a K value greater than the preset threshold value, and the thickness of the second metal layer 105 varies within the range of 5 nm to 20 nm.

[0047] When the thickness of the first metal layer 104 Ag in the broadband absorber structure is 100 nm, and the thickness of the second metal layer 105 Ge is 12 nm, the spectral diagram of the broadband absorber structure is as shown in Figure 2 (A).

[0048] When the thickness of the first metal layer 104 Ag in the broadband absorber structure is 100 nm, and the thickness of the second metal layer 105 Ge is 18 nm, the spectral diagram of the broadband absorber structure is as shown in Figure 2 (B).

[0049] Comparison Figure 2 (A) and Figure 2 (B) can be found that as the thickness of Ge increases, its reflectivity will decrease and the absorption effect will improve.

[0050] On the basis of the above-mentioned embodiment, the third metal layer 106 is located on the second metal layer 105.

[0051] The metal layer in the broadband absorber structure is two or more than two. The broadband absorber structure in the embodiment comprises three metal layers, i.e. the first metal layer 104, the second metal layer 105 and the third metal layer 106.

[0052] On the basis of the above-mentioned embodiment, the third metal layer 106 in the embodiment is a metal material such as Ti, Si or W with a K value greater than the preset threshold value, and the thickness of the third metal layer 106 ranges from 5 nm to 20 nm.

[0053] When the thickness of the first metal layer 104 Ag in the broadband absorber structure is 100 nm, the thickness of the second metal layer 105 Ge is 12 nm, and the thickness of the third metal layer 106 Ti is 6 nm, the spectral diagram of the broadband absorber structure is as shown in Figure 2 (C).

[0054] Comparison Figure 2 (A) and Figure 2 (C) can be found that, Figure 2 (C) has a better overall absorption effect.

[0055] On the basis of the above-mentioned embodiment, the medium layer in the embodiment comprises a first medium layer 107 and a second medium layer 108, the second medium layer 108 is located on the first medium layer 107, and the medium layer is located on the metal layer.

[0056] The medium layer in the broadband absorber structure in the embodiment comprises two layers, i.e. the first medium layer 107 and the second medium layer 108.

[0057] When the broadband absorber structure comprises two metal layers, the first medium layer 107 and the second medium layer 108 are located on the second metal layer 105.

[0058] When the broadband absorber structure comprises three metal layers, the first medium layer 107 and the second medium layer 108 are located on the third metal layer 106.

[0059] On the basis of the above-mentioned embodiment, the first medium layer 107 in the embodiment is Ta2O3.3, the thickness of the first medium layer 107 is 6 nm, the second medium layer 108 is a material such as Ta2O3.5, oxide of Ta, TiO2 or SiO2 with a K value of 0, and the thickness of the second medium layer 108 ranges from 4 nm to 500 nm.

[0060] The first dielectric layer 107 is mainly used to prevent the oxidation of the bottom layer of Ag, and the second dielectric layer 108 is mainly used to improve the saturation of color display.

[0061] Figure 3 is the optical constant N, K value diagram of the first dielectric layer 107 Ta2O3.3 in the display structure provided in the embodiment. Figure 4 is the optical constant N, K value diagram of the second dielectric layer 108 Ta2O3.5 in the display structure provided in the embodiment.

[0062] When the wideband absorber structure contains two layers of metal layers, the thickness of the first metal layer 104 Ag is 100 nm, the thickness of the second metal layer 105 Ge is 12 nm, the thickness of the first dielectric layer 107 Ta2O3.3 is 6 nm, and the thickness of the second dielectric layer 108 Ta2O3.5 is 24 nm, the spectral diagram of the wideband absorber structure is as shown in Figure 2 (D).

[0063] When the wideband absorber structure contains two layers of metal layers, the thickness of the first metal layer 104 Ag is 100 nm, the thickness of the second metal layer 105 Ge is 18 nm, the thickness of the first dielectric layer 107 Ta2O3.3 is 6 nm, and the thickness of the second dielectric layer 108 Ta2O3.5 is 24 nm, the spectral diagram of the wideband absorber structure is as shown in Figure 2 (E).

[0064] When the wideband absorber structure contains three layers of metal layers, the thickness of the first metal layer 104 Ag is 100 nm, the thickness of the second metal layer 105 Ge is 12 nm, the thickness of the third metal layer 106 Ti is 6 nm, the thickness of the first dielectric layer 107 Ta2O3.3 is 6 nm, and the thickness of the second dielectric layer 108 Ta2O3.5 is 24 nm, the spectral diagram of the wideband absorber structure is as shown in Figure 2 (F). Figure 2 (F) has a good overall absorption effect, and the reflectivity is good within the range of 400 nm to 800 nm.

[0065] Comparing Figure 2 (D), Figure 2 (E) and Figure 2 (F) can find that after adding the dielectric layer Figure 2 (F) corresponding wideband absorption structure has good curve absorption in the overall range, and has low reflectivity.

[0066] On the basis of the above embodiment, the narrowband absorber structure in the embodiment comprises, from bottom to top, a reflective layer 101, a third dielectric layer 102, a fourth dielectric layer 103, and the first metal layer 104.

[0067] In the above embodiment, the reflective layer 101 is Ag, and the thickness of the reflective layer 101 is greater than 50 nm.

[0068] The third dielectric layer 102 is Ta2O3.3, and the thickness of the third dielectric layer 102 is 6 nm.

[0069] The fourth dielectric layer 103 is Ta2O3.5, and the thickness of the fourth dielectric layer 103 varies in the range of 10 nm to 1 micron.

[0070] The first metal layer 104 is Ag, and the thickness of the first metal layer 104 varies in the range of 10 nm to 100 nm.

[0071] The third dielectric layer 102 is mainly to prevent the Ag of the reflective layer 101 from being oxidized. The fourth dielectric layer 103 is mainly used to produce color, and the color will change when the thickness of the layer is changed.

[0072] When the thickness of the reflective layer 101 Ag in the narrow-band absorber structure is 100 nm, the thickness of the third dielectric layer 102 Ta2O3.3 is 6 nm, the thickness of the fourth dielectric layer 103 Ta2O3.5 is 104 nm, and the thickness of the first metal layer 104 Ag is 25 nm, the spectral diagram of the narrow-band absorber structure is as shown in Figure 5 (A).

[0073] When the thickness of the reflective layer 101 Ag in the narrow-band absorber structure is 100 nm, the thickness of the third dielectric layer 102 Ta2O3.3 is 6 nm, the thickness of the fourth dielectric layer 103 Ta2O3.5 is 104 nm, and the thickness of the first metal layer 104 Ag is 30 nm, the spectral diagram of the narrow-band absorber structure is as shown in Figure 5 (B).

[0074] When the thickness of the reflective layer 101 Ag in the narrow-band absorber structure is 100 nm, the thickness of the third dielectric layer 102 Ta2O3.3 is 6 nm, the thickness of the fourth dielectric layer 103 Ta2O3.5 is 104 nm, and the thickness of the first metal layer 104 Ag is 35 nm, the spectral diagram of the narrow-band absorber structure is as shown in Figure 5 (C).

[0075] Comparing Figure 5 (A), Figure 5 (B) and Figure 5 (C), it can be found that as the thickness of the Ag layer increases, the half-width of the narrow-band absorption structure will become narrower.

[0076] When the display structure of the wide-band absorber structure coupled with the narrow-band absorber structure, the thickness of the reflective layer 101 Ag is 100 nm, the thickness of the third dielectric layer 102 Ta2O3.3 is 6 nm, the thickness of the fourth dielectric layer 103 Ta2O3.5 is 104 nm, the thickness of the first metal layer 104 Ag is 25 nm, the thickness of the second metal layer 105 Ge is 12 nm, the thickness of the third metal layer 106 Ti is 6 nm, the thickness of the first dielectric layer 107 Ta2O3.3 is 6 nm, and the thickness of the second dielectric layer 108 Ta2O3.5 is 24 nm, the spectral diagram of the display structure is as shown in Figure 5 (D) shown.

[0077] When the display structure of the wide-band absorber structure coupled with the narrow-band absorber structure, the thickness of the reflective layer 101 Ag is 100 nm, the thickness of the third dielectric layer 102 Ta2O3.3 is 6 nm, the thickness of the fourth dielectric layer 103 Ta2O3.5 is 108 nm, the thickness of the first metal layer 104 Ag is 30 nm, the thickness of the second metal layer 105 Ge is 18 nm, the thickness of the third metal layer 106 Ti is 6 nm, the thickness of the first dielectric layer 107 Ta2O3.3 is 6 nm, and the thickness of the second dielectric layer 108 Ta2O3.5 is 24 nm, the spectral diagram of the display structure is as shown in Figure 5 (E) shown.

[0078] When the display structure of the wide-band absorber structure coupled with the narrow-band absorber structure, the thickness of the reflective layer 101 Ag is 100 nm, the thickness of the third dielectric layer 102 Ta2O3.3 is 6 nm, the thickness of the fourth dielectric layer 103 Ta2O3.5 is 108 nm, the thickness of the first metal layer 104 Ag is 30 nm, the thickness of the second metal layer 105 Ge is 12 nm, the thickness of the third metal layer 106 Ti is 6 nm, the thickness of the first dielectric layer 107 Ta2O3.3 is 6 nm, and the thickness of the second dielectric layer 108 Ta2O3.5 is 24 nm, the spectral diagram of the display structure is as shown in Figure 5 (F) shown. It can be seen from the surface structure that the overall reflection of the structure is good, the reflectivity is good in the range of 400 nm to 800 nm, the spectral peak pulse width is narrow, and the spectral reflectivity in the non-target area is low.

[0079] Comparing Figure 5 (D) and Figure 5 (F) can be found that the increase of the thickness of the first metal layer 104 Ag will cause the peak to be bottomed, but the width of the entire peak region will be narrowed, and the color saturation will be increased, so the thickness of the first metal layer 104 Ag can be selected as 30 nm. Comparing Figure 5 (D), Figure 5 (E) and Figure 5(F), it can be found that the double-layer metal combination makes it have a lower reflectivity in the non-target region.

[0080] When the display structure is coupled by the wide-band absorber structure and the narrow-band absorber structure, the thickness of the reflection layer 101Ag is 100 nm, the thickness of the third dielectric layer 102Ta2O3.3 is 6 nm, the thickness of the fourth dielectric layer 103Ta2O3.5 is t, the thickness of the first metal layer 104Ag is 30 nm, the thickness of the second metal layer 105Ge is 12 nm, the thickness of the third metal layer 106Ti is 6 nm, the thickness of the first dielectric layer 107Ta2O3.3 is 6 nm, and the thickness of the second dielectric layer 108Ta2O3.5 is 24 nm, the spectral diagram of the fourth dielectric layer 103Ta2O3.5 with the thickness t changing from 54 nm to 120 nm is shown in Figure 6 It can be seen that the spectral peak is narrow and the reflectivity in the non-target region is low.

[0081] Finally, it should be noted that: the above examples are only used to illustrate the technical solutions of the present application, but not to limit it; although the present application has been described in detail with reference to the foregoing examples, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing examples, or make equivalent replacement for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A display structure, characterized in that, include: Narrowband absorber structure; A broadband absorber structure includes a thin film composed of a dielectric layer and a metal layer. The metal layer is multilayered and has losses. The K value is greater than a preset threshold. The broadband absorber structure is located on top of the narrowband absorber structure and is coupled with the narrowband absorber structure to produce bright colors. The metal layer includes a first metal layer and a second metal layer, wherein the second metal layer is located on top of the first metal layer; The first metal layer is Ag, and the thickness of the first metal layer varies in the range of 10 nm to 100 nm; The second metal layer is a Ge, Si, or W metal material with a K value greater than the preset threshold, and the thickness of the second metal layer varies in the range of 5 nm to 20 nm. The dielectric layer includes a first dielectric layer and a second dielectric layer, wherein the second dielectric layer is located above the first dielectric layer and the dielectric layer is located above the metal layer; The first dielectric layer is Ta2O 3.3 To prevent oxidation of the underlying metal, the second dielectric layer is Ta₂O with a K value of 0. 3.5 Ta oxides, TiO2, or SiO2; The narrowband absorber structure includes a reflective layer, a third dielectric layer, a fourth dielectric layer, and a first metal layer arranged sequentially from bottom to top. The third dielectric layer is Ta2O. 3.3 The thickness of the third dielectric layer is 5 to 10 nm; The fourth dielectric layer is Ta2O. 3.5 The material is an oxide of Ta, TiO2, or SiO2, with a K value of 0, and the thickness of the fourth dielectric layer varies from 10 nm to 1 micrometer. It also includes a third metal layer, which is located on top of the second metal layer.

2. The display structure according to claim 1, characterized in that, The third metal layer is a Ti, Si, or W metal material with a K value greater than the preset threshold, and the thickness of the third metal layer varies in the range of 5 nm to 20 nm.

3. The display structure according to claim 1, characterized in that, The thickness of each metal layer is less than 30 nm.

4. The display structure according to claim 1, characterized in that, The thickness of the first dielectric layer is 6 nm, and the thickness of the second dielectric layer varies in the range of 4 nm to 500 nm.

5. The display structure according to claim 1, characterized in that, The reflective layer is Ag, and the thickness of the reflective layer is greater than 50 nm; The first metal layer is Ag, and the thickness of the first metal layer varies in the range of 10 nm to 100 nm.

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