SSPC control circuit with ideal diode function and operation method thereof

Abstract

The invention discloses an SSPC control circuit with an ideal diode function and an operation method thereof, and relates to the technical field of aviation power distribution. The SSPC comprises a power part and a control part, the SSPC power part comprises N power switch devices connected in parallel and a current sampling resistor, and the SSPC control part comprises an input voltage acquisition module, an output voltage acquisition module, a driving module, a current acquisition module and a microprocessor. According to the control method, the switching-on and switching-off of the power switching device are controlled by monitoring the flowing direction of the power, so that the SSPC has extremely low voltage drop and power loss when the power is in the forward direction, the power current is rapidly cut off when the power is in the reverse direction, the reverse cut-off function is achieved, and the SSPC has the ideal diode function.

Description

Technical Field

[0001] The invention belongs to the technical field of aviation power distribution system, and in particular relates to a SSPC control circuit with an ideal diode function and an operation method thereof. Background Art

[0002] SSPC stands for solid-state power controller in Chinese. It is commonly used in fields such as aviation power distribution systems. It is usually used to replace the functions of traditional mechanical relays and circuit breakers, which can significantly reduce the weight and volume of aviation power distribution systems. The microprocessor inside the SSPC controls the opening and closing of semiconductor power devices through the drive circuit to achieve load switching control, and realizes load overcurrent and protection functions by collecting power current and related protection algorithms.

[0003] In the prior art, CN117595850A "An ideal diode circuit" uses a clock + charge pump method to control MOSFET; CN112075024A "Self-biased ideal diode circuit" uses two MOSFETs; CN115514357A "A passive adaptive ideal diode circuit entire control circuit" uses multiple transistors for control.

[0004] As the power level of aviation equipment continues to increase, the aviation voltage level is also constantly increasing. The power consumed and the heat dissipated by the diodes on the power lines can no longer be ignored. Therefore, a high-power, low-on-resistance ideal diode is needed to replace the traditional diode to reduce the line voltage drop and power loss. Summary of the invention

[0005] In order to solve the deficiencies of the above-mentioned prior art, the present invention provides a SSPC control method with an ideal diode function, so that the traditional SSPC can achieve low on-resistance and reverse cutoff function, realize the ideal diode function, and can replace the traditional diode to reduce the line voltage drop and power loss in high-power and high-voltage application scenarios.

[0006] In view of this, according to one aspect of an embodiment of the present invention, a SSPC control circuit with an ideal diode function is provided, comprising: an SSPC power part and an SSPC control part; the SSPC power part comprises a plurality of parallel power switch devices and a current sampling resistor 6; the power switch device comprises a MOSFET 7 or an IGBT 8 of a parallel diode; the SSPC control part comprises a microprocessor 1, an input voltage acquisition module 2, an output voltage acquisition module 5, a current acquisition module 4 and a drive module 3; the input voltage acquisition module 2 acquires an input voltage signal VIN and reports the voltage signal VIN to the microprocessor 1; the input voltage acquisition module 5 acquires an output voltage signal VIN and reports the output ... The voltage signal VOUT is generated by the current acquisition module 4, and the voltage signal VOUT is reported to the microprocessor 1; the current acquisition module 4 acquires the power current signal IS, and reports the current signal IS to the microprocessor 1; the microprocessor 1 sends a drive signal to the drive module 3 to control the on or off of the MOSFET 7 or the IGBT 8 of the parallel diode; the S end of the MOSFET 7 is connected to the input end, the D end of the MOSFET 7 is connected to one end of the current sampling resistor 6, and the other end of the current sampling resistor 6 is connected to the output end; the E end of the IGBT 8 of the parallel diode is connected to the input end, the C end of the IGBT 8 of the parallel diode is connected to one end of the current sampling resistor 6, and the other end of the current sampling resistor 6 is connected to the output end.

[0007] Optionally, the MOSFET 7 is an enhancement type N-MOSFET.

[0008] Optionally, the IGBT8 of the parallel diode includes two parts: a parallel diode and an N-IGBT itself, wherein the emitter E of the N-IGBT itself is connected to the anode and input end of the parallel diode, and the collector C of the N-IGBT itself is connected to the cathode of the parallel diode.

[0009] Optionally, the microprocessor 1 is a 51 single-chip microcomputer or an ARM processor.

[0010] Optionally, the resistance of the current sampling resistor 6 is not greater than 10 mΩ.

[0011] Optionally, the output voltage range of the driving module 3 is within ±20V.

[0012] Optionally, the input voltage of the input voltage acquisition module 2 is not greater than 600V, and the output voltage is not greater than 3V.

[0013] Optionally, the input voltage of the output voltage acquisition module 5 is not greater than 600V, and the output voltage is not greater than 3V.

[0014] Optionally, the input voltage of the current acquisition module 4 is not greater than 3V, and the output voltage is not greater than 3V.

[0015] According to another aspect of an embodiment of the present invention, there is also provided an operation method of a SSPC control circuit having an ideal diode function, based on any of the above circuits, comprising:

[0016] Step S1: the input voltage acquisition module 2 acquires the input voltage value VIN and reports it to the microprocessor 1;

[0017] Step S2: the output voltage acquisition module 5 acquires the output voltage value VOUT and reports it to the microprocessor 1;

[0018] Step S3: the current acquisition module 4 acquires the power current value Is through the current sampling resistor 6 and reports it to the microprocessor 1; when the power current flows from the input end to the output end, Is>0; when the power current flows from the output end to the input end, Is<0;

[0019] Step S4: When the input voltage VIN>output voltage VOUT, the power direction is positive, and the power current Is flows from the input end to the output end through the internal diode of the power switch device, Is>0, and the voltage drop across the power switch device is large; when the microprocessor 1 detects that the input voltage VIN>output voltage VOUT, or when the microprocessor 1 detects that the power current Is>0, the microprocessor quickly controls the drive module to turn on the power switch device, so that the power current flow path is switched from the internal diode of the power switch device to the MOSFET or IGBT itself, which can significantly reduce the voltage drop across the power switch device and reduce the line loss;

[0020] Step S5: In step S4, after the power switch device is turned on, when the microprocessor 1 detects that the power direction is negative, that is, when the input voltage VIN < output voltage VOUT, or the power current Is < 0, the microprocessor 1 quickly controls the drive module to turn off the power switch device, cut off the power current, and realize the reverse cutoff function.

[0021] The control method of the present invention controls the opening and closing of the power switch device by monitoring the flow direction of power, so that the SSPC has extremely low voltage drop and power loss when the power is forward, and quickly cuts off the power current when the power is reversed, realizing the reverse cutoff function, so that the SSPC has the function of an ideal diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A control flow chart of an SSPC with an ideal diode function according to the present invention;

[0023] Figure 2 This is a hardware schematic diagram of a SSPC embodiment 1 having an ideal diode function according to the present invention;

[0024] Figure 3This is a hardware schematic diagram of a SSPC embodiment 2 having an ideal diode function according to the present invention;

[0025] Description of reference numerals:

[0026] 1- microprocessor; 2- input voltage acquisition module; 3- drive module; 4- current acquisition module; 5- output voltage acquisition module; 6- current sampling resistor; 7- MOSFET; 8- IGBT. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0028] According to one aspect of an embodiment of the present invention, a SSPC control circuit with an ideal diode function is provided, comprising: an SSPC power part and an SSPC control part; the SSPC power part comprises a plurality of parallel power switch devices and a current sampling resistor 6; the power switch device comprises a MOSFET 7 or an IGBT 8 of a parallel diode; the SSPC control part comprises a microprocessor 1, an input voltage acquisition module 2, an output voltage acquisition module 5, a current acquisition module 4 and a drive module 3; the input voltage acquisition module 2 acquires an input voltage signal VIN and reports the voltage signal VIN to the microprocessor 1; the input voltage acquisition module 5 acquires an output voltage signal VOUT, and reports the voltage signal VOUT to the microprocessor 1; the current acquisition module 4 acquires the power current signal IS, and reports the current signal IS to the microprocessor 1; the microprocessor 1 sends a drive signal to the drive module 3 to control the opening or closing of the MOSFET7 or the IGBT8 of the parallel diode; the S end of the MOSFET7 is connected to the input end, the D end of the MOSFET7 is connected to one end of the current sampling resistor 6, and the other end of the current sampling resistor 6 is connected to the output end; the E end of the IGBT8 of the parallel diode is connected to the input end, the C end of the IGBT8 of the parallel diode is connected to one end of the current sampling resistor 6, and the other end of the current sampling resistor 6 is connected to the output end.

[0029] Furthermore, the MOSFET 7 is an enhancement type N-MOSFET.

[0030] Furthermore, the parallel diode IGBT8 includes two parts: a parallel diode and an N-IGBT itself. The emitter E of the N-IGBT itself is connected to the positive electrode and the input end of the parallel diode, and the collector C of the N-IGBT itself is connected to the negative electrode of the parallel diode.

[0031] Furthermore, the microprocessor 1 is a 51 single-chip microcomputer or an ARM processor.

[0032] Furthermore, the resistance of the current sampling resistor 6 is not greater than 10 mΩ.

[0033] Furthermore, the output voltage range of the driving module 3 is within ±20V.

[0034] Furthermore, the input voltage of the input voltage acquisition module 2 is not greater than 600V, and the output voltage is not greater than 3V.

[0035] Furthermore, the input voltage of the output voltage acquisition module 5 is not greater than 600V, and the output voltage is not greater than 3V.

[0036] Furthermore, the input voltage of the current acquisition module 4 is not greater than 3V, and the output voltage is not greater than 3V.

[0037] According to another aspect of the embodiment of the present invention, there is also provided an operation method of a SSPC control circuit having an ideal diode function, such as Figure 1 As shown, based on any of the circuits described above, comprising:

[0038] Step S1: the input voltage acquisition module 2 acquires the input voltage value VIN and reports it to the microprocessor 1;

[0039] Step S2: the output voltage acquisition module 5 acquires the output voltage value VOUT and reports it to the microprocessor 1;

[0040] Step S3: the current acquisition module 4 acquires the power current value Is through the current sampling resistor 6 and reports it to the microprocessor 1; when the power current flows from the input end to the output end, Is>0; when the power current flows from the output end to the input end, Is<0;

[0041] Step S4: When the input voltage VIN>output voltage VOUT, the power direction is positive, and the power current Is flows from the input end to the output end through the internal diode of the power switch device, Is>0, and the voltage drop across the power switch device is large; when the microprocessor 1 detects that the input voltage VIN>output voltage VOUT, or when the microprocessor 1 detects that the power current Is>0, the microprocessor quickly controls the drive module to turn on the power switch device, so that the power current flow path is switched from the internal diode of the power switch device to the MOSFET or IGBT itself, which can significantly reduce the voltage drop across the power switch device and reduce the line loss;

[0042] Step S5: In step S4, after the power switch device is turned on, when the microprocessor 1 detects that the power direction is negative, that is, when the input voltage VIN < output voltage VOUT, or the power current Is < 0, the microprocessor 1 quickly controls the drive module to turn off the power switch device, cut off the power current, and realize the reverse cutoff function.

[0043] Example 1

[0044] The hardware schematic diagram of Embodiment 1 of the present invention is as follows: Figure 2 As shown, the SSPC includes an SSPC power part and an SSPC control part; the SSPC power part includes a plurality of parallel power switch devices and a current sampling resistor 6; the power switch device of embodiment 1 of the present invention is MOSFET7; the SSPC control part includes a microprocessor 1, an input voltage acquisition module 2, an output voltage acquisition module 5, a current acquisition module 4 and a drive module 3; the input voltage acquisition module 2 acquires an input voltage signal VIN and reports the voltage signal VIN to the microprocessor 1; the input voltage acquisition module 5 acquires an output voltage signal VOUT and reports the voltage signal VOUT to the microprocessor 1; the current acquisition module 4 acquires a power current signal IS and reports the current signal IS to the microprocessor 1; the microprocessor 1 sends a drive signal to the drive module 3 to control the on or off of the MOSFET7; the S end of the MOSFET7 is connected to the input end, the D end of the MOSFET7 is connected to one end of the current sampling resistor 6, and the other end of the current sampling resistor 6 is connected to the output end.

[0045] Embodiment The hardware schematic diagram of Embodiment 2 of the present invention is as follows Figure 3 As shown, the SSPC includes an SSPC power part and an SSPC control part; the SSPC power part includes a plurality of parallel power switching devices and a current sampling resistor 6; the power switching device of embodiment 2 of the present invention is an IGBT8 with a parallel diode; the SSPC control part includes a microprocessor 1, an input voltage acquisition module 2, an output voltage acquisition module 5, a current acquisition module 4 and a drive module 3; the input voltage acquisition module 2 acquires an input voltage signal VIN and reports the voltage signal VIN to the microprocessor 1; the input voltage acquisition module 5 acquires an output voltage signal VOUT and reports the voltage signal VOUT to the microprocessor 1; the current acquisition module 4 acquires a power current signal IS and reports the current signal IS to the microprocessor 1; the microprocessor 1 sends a drive signal to the drive module 3 to control the opening or closing of the IGBT8 with a parallel diode; the E end of the IGBT8 with a parallel diode is connected to the input end, the C end of the IGBT8 with a parallel diode is connected to one end of the current sampling resistor 6, and the other end of the current sampling resistor 6 is connected to the output end.

[0046] like Figure 1As shown, Embodiment 1 and Embodiment 2 of the present invention realize the control of the ideal diode function through this flow chart:

[0047] The microprocessor obtains the input voltage value VIN, the output voltage value VOUT, and the power current value Is collected by the current sampling resistor through the hardware acquisition module and reports them to the microprocessor. When the power current flows from the input end to the output end, Is>0; when the power current flows from the output end to the input end, Is<0.

[0048] At the beginning, the power device is in the off state. When the input voltage VIN>output voltage VOUT, the power direction is positive. At this time, the power current Is flows from the input end to the output end through the internal diode of the power switching device, Is>0, and the voltage drop across the power switching device is large. When the microprocessor detects that the input voltage VIN>output voltage VOUT, or the microprocessor detects that the power current Is>0, the microprocessor quickly controls the drive module to turn on the power switching device, so that the power current flow path is switched from the internal diode of the power switching device to the MOSFET or IGBT itself, which can significantly reduce the voltage drop across the power switching device and reduce line losses.

[0049] After the power switch device is turned on, when the microprocessor detects that the power direction is negative, that is, when the input voltage VIN < output voltage VOUT, or the power current Is < 0, the microprocessor quickly controls the drive module to turn off the power switch device, cut off the power current, and realize the reverse cutoff function.

[0050] The above is only a specific embodiment of the present invention, and the present invention is described in detail. The unexplained part is a conventional technology. However, the protection scope of the present invention is not limited to this. Any changes or substitutions that can be easily thought of by any technician familiar with the technical field within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. The protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A SSPC control circuit with an ideal diode function, characterized in that: include: The SSPC power part and the SSPC control part; the SSPC power part comprises a plurality of parallel power switch devices and a current sampling resistor (6); the power switch device comprises a MOSFET (7) or an IGBT (8) with a parallel diode; the SSPC control part comprises a microprocessor (1), an input voltage acquisition module (2), an output voltage acquisition module (5), a current acquisition module (4) and a drive module (3); the input voltage acquisition module (2) acquires an input voltage signal VIN and reports the voltage signal VIN to the microprocessor (1); the input voltage acquisition module (5) acquires an output voltage signal VOUT and reports the voltage signal VOUT to the microprocessor (1 ); the current acquisition module (4) acquires the power current signal IS, and reports the current signal IS to the microprocessor (1); the microprocessor (1) sends a drive signal to the drive module (3) to control the on or off of the MOSFET (7) or the IGBT (8) connected to the parallel diode; the S end of the MOSFET (7) is connected to the input end, the D end of the MOSFET (7) is connected to one end of the current sampling resistor (6), and the other end of the current sampling resistor (6) is connected to the output end; the E end of the IGBT (8) connected to the parallel diode is connected to the input end, the C end of the IGBT (8) connected to the parallel diode is connected to one end of the current sampling resistor (6), and the other end of the current sampling resistor (6) is connected to the output end.

2. The control circuit according to claim 1, characterized in that: The MOSFET (7) is an enhancement type N-MOSFET.

3. The control circuit according to claim 1, characterized in that: The parallel diode IGBT (8) comprises two parts, namely the parallel diode and the N-IGBT itself. The emitter E of the N-IGBT itself is connected to the positive electrode and the input end of the parallel diode, and the collector C of the N-IGBT itself is connected to the negative electrode of the parallel diode.

4. The control circuit according to claim 1, characterized in that: The microprocessor (1) is of the type of a 51 single-chip microcomputer or an ARM processor.

5. The control circuit according to claim 1, characterized in that: The resistance value of the current sampling resistor (6) is not greater than 10 mΩ.

6. The control circuit according to claim 1, characterized in that: The output voltage range of the driving module (3) is within ±20V.

7. The control circuit according to claim 1, characterized in that: The input voltage of the input voltage acquisition module (2) is not greater than 600V, and the output voltage is not greater than 3V.

8. The control circuit according to claim 1, characterized in that: The input voltage of the output voltage acquisition module (5) is not greater than 600V, and the output voltage is not greater than 3V.

9. The control circuit according to claim 1, characterized in that: The input voltage of the current acquisition module (4) is not greater than 3V, and the output voltage is not greater than 3V.

10. A method for operating a SSPC control circuit having an ideal diode function, characterized in that: Based on any circuit as claimed in claims 1-9, comprising: Step S1: the input voltage acquisition module (2) acquires the input voltage value VIN and reports it to the microprocessor (1); Step S2: the output voltage acquisition module (5) acquires the output voltage value VOUT and reports it to the microprocessor (1); Step S3: the current acquisition module (4) acquires the power current value Is through the current sampling resistor (6) and reports it to the microprocessor (1); when the power current flows from the input end to the output end, Is>0; when the power current flows from the output end to the input end, Is<0; Step S4: when the input voltage VIN>output voltage VOUT, the power direction is positive, and at this time the power current Is flows from the input end to the output end through the internal diode of the power switch device, Is>0, and at this time the voltage drop across the power switch device is relatively large; when the microprocessor (1) detects that the input voltage VIN>output voltage VOUT, or when the microprocessor (1) detects that the power current Is>0, the microprocessor quickly controls the drive module to turn on the power switch device, so that the power current flow path is switched from the internal diode of the power switch device to the MOSFET or IGBT itself, which can significantly reduce the voltage drop across the power switch device and reduce line loss at the same time; Step S5: In step S4, after the power switch device is turned on, when the microprocessor (1) detects that the power direction is negative, that is, when the input voltage VIN < output voltage VOUT, or when the power current Is < 0, the microprocessor (1) quickly controls the drive module to turn off the power switch device, cut off the power current, and realize the reverse cutoff function.

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