A solar cell, a stacked cell, and a photovoltaic module

Abstract

The application relates to a solar cell, a laminated cell and a photovoltaic module, comprising a substrate, a first surface of the substrate comprising a first region and a second region, the first region comprising a first sub-region, a tunneling layer being arranged on the first region, a doped conductive layer being arranged on a side of the tunneling layer away from the substrate, a first passivation layer being arranged on a side of the doped conductive layer away from the tunneling layer and on the second region, a first anti-reflection layer being arranged on a side of the first passivation layer away from the substrate, and a first fine grid being arranged on the first sub-region in a one-to-one correspondence, at least part of the structure of the first fine grid penetrating the first anti-reflection layer and the first passivation layer and being electrically connected with the doped conductive layer, and the distance L1 between the first fine grid and the edge of the first sub-region corresponding to the first fine grid in the first direction satisfying 50 mu m <= L1 <= 800 mu m, so that the design can reduce the light parasitic absorption of the doped conductive layer while ensuring the performance of carrier lateral transmission and improving the photoelectric conversion efficiency of the solar cell.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar cells, in particular to a solar cell, a stacked cell and a photovoltaic module. BACKGROUND

[0002] A solar cell can convert solar energy into electrical energy. A tunneling passivation contact structure can be formed by a tunneling layer and a doped conductive layer on the back surface of the solar cell. However, the doped conductive layer has a serious light parasitic absorption, which affects the short-circuit current of the solar cell. SUMMARY

[0003] Therefore, the present application provides a solar cell, a stacked cell and a photovoltaic module to solve the above problems in the prior art and improve the performance of carrier lateral transport.

[0004] In a first aspect, an embodiment of the present application provides a solar cell, comprising: a substrate, a tunneling layer, a doped conductive layer, a first passivation layer, a first anti-reflection layer and a first fine grid, the substrate has a first surface along its thickness direction, the first surface comprises a first region and a second region, the first region comprises a first sub-region, the first sub-region is arranged alternately with the second region along a first direction, the first direction is orthogonal to the thickness direction of the substrate, the tunneling layer is arranged on the first region, the doped conductive layer is arranged on a side of the tunneling layer away from the substrate, the first passivation layer is arranged on a side of the doped conductive layer away from the tunneling layer and the second region, the first anti-reflection layer is arranged on a side of the first passivation layer away from the substrate, the first fine grid is distributed along the first direction and is arranged one by one on the first sub-region, at least part of the structure of the first fine grid penetrates the first anti-reflection layer and the first passivation layer and is electrically connected with the doped conductive layer, and the distance L1 between the first fine grid and the edge of the first sub-region corresponding to the first fine grid in the first direction satisfies 50 μm≤L1≤800 μm.

[0005] In a possible implementation, along the first direction, the first fine grid at the center position of the substrate is a center fine grid, the first fine grid at the edge position of the substrate is an edge fine grid, the distance between the center fine grid and the edge of the first sub-region corresponding to the center fine grid in the first direction is L11, the distance between the edge fine grid and the edge of the first sub-region corresponding to the edge fine grid in the first direction is L12, L11 is greater than L12, or L11 is less than L12.

[0006] In a possible implementation, a distance L11 between the center fine grid and the edge of the first sub-region corresponding to the center fine grid in the first direction satisfies: 100 μm≤L11≤400 μm, and a distance L12 between the edge fine grid and the edge of the first sub-region corresponding to the edge fine grid in the first direction satisfies: 50 μm≤L2≤800 μm.

[0007] In a possible implementation, the solar cell further includes a first main grid arranged along a second direction orthogonal to the first direction, the first main grid being located on a side of the first fine grid away from the substrate and electrically connected to the first fine grid along the thickness direction of the substrate, the first region further includes a second sub-region connected between any two adjacent first sub-regions, the second sub-region being arranged alternately with the second region along the second direction and corresponding to the first main grid; a projection of a part of structure of the first main grid is located in the first sub-region, and a projection of another part of structure of the first main grid is located in the second sub-region along the thickness direction of the substrate.

[0008] In a possible implementation, a distance L2 between the first main grid and the edge of the second sub-region corresponding to the first main grid in the second direction satisfies: 0 μm≤L11≤400 μm.

[0009] In a possible implementation, the first main grid located at a center position of the substrate is a center main grid, the first main grid located at an edge position of the substrate is an edge main grid, a distance L21 between the center main grid and the edge of the second sub-region corresponding to the center main grid in the second direction, and a distance L22 between the edge main grid and the edge of the second sub-region corresponding to the edge main grid in the second direction, L21 is greater than L22, or L21 is less than L22.

[0010] In a possible implementation, a thickness D1 of the doped conductive layer along the thickness direction of the substrate satisfies: 60 nm≤D1≤300 nm.

[0011] In a possible implementation, a distance H between the first region and the second region along the thickness direction of the substrate satisfies: 0.5 μm≤H≤10 μm.

[0012] In a possible implementation, the solar cell includes an emitter, a second passivation layer, and a second anti-reflection layer, the substrate has a second surface opposite to the first surface along a thickness direction of the substrate, the emitter is formed inside or above the second surface, the second passivation layer is located on a side of the emitter away from the substrate along the thickness direction of the substrate, and the second anti-reflection layer is located on a side of the second passivation layer away from the substrate.

[0013] In a second aspect, the embodiments of the present application provide a photovoltaic module, including a cover plate, an encapsulation layer, and at least one cell string, the cell string includes a plurality of the solar cells described in any one of the preceding embodiments, the encapsulation layer is located between the cover plate and the cell string, and the cover plate is connected with the cell string through the encapsulation layer.

[0014] In a third aspect, the embodiments of the present application provide a laminated cell, including a crystalline silicon bottom cell and a perovskite top cell, the crystalline silicon bottom cell includes the solar cell described in any one of the preceding embodiments, and the perovskite top cell is electrically connected with the crystalline silicon bottom cell.

[0015] The embodiments of the present application provide a solar cell, a laminated cell, and a photovoltaic module, including a substrate, the substrate has a first surface along a thickness direction of the substrate, the first surface includes a first region and a second region, the first region includes a first sub-region, the first sub-region is arranged alternately with the second region along a first direction, the first direction is orthogonal to the thickness direction of the substrate, a tunneling layer is arranged on the first region, a doped conductive layer is arranged on a side of the tunneling layer away from the substrate, a first passivation layer is arranged on a side of the doped conductive layer away from the tunneling layer and on the second region, a first anti-reflection layer is arranged on a side of the first passivation layer away from the substrate, a first fine grid is distributed along the first direction and is arranged on the first sub-region one by one, at least part of a structure of the first fine grid penetrates the first anti-reflection layer and the first passivation layer and is electrically connected with the doped conductive layer, and a distance L1 of the first fine grid and an edge of the first sub-region corresponding to the first fine grid in the first direction satisfies 50 μm ≤ L1 ≤ 800 μm.

[0016] In the embodiment of the present application, the tunneling layer and the doped conductive layer are only arranged on the first region, so that the first fine grid can form a good ohmic contact with the doped conductive layer. The second region is not provided with the tunneling layer and the doped conductive layer, thereby reducing the light parasitic absorption and improving the short-circuit current of the solar cell, so as to improve the photoelectric conversion efficiency of the solar cell. Meanwhile, the first passivation layer and the first anti-reflection layer are arranged on the second region, and the first passivation layer and the first anti-reflection layer can have a good passivation effect on the second region. Therefore, the embodiment of the present application can reduce the light parasitic absorption of the doped conductive layer while ensuring the passivation performance and contact performance of the first surface of the solar cell substrate. The distance L1 is designed to be 50 μm to 800 μm, so as to reduce the light parasitic absorption of the doped conductive layer while ensuring the rate of lateral carrier transport, thereby improving the photoelectric conversion efficiency of the solar cell, and facilitating the preparation of the first fine grid.

[0017] It should be understood that the above general description and the following detailed description are only exemplary and cannot limit the present application. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0019] Figure 1 It is a partial schematic view of the solar cell in an embodiment of the present application;

[0020] Figure 2 It is a partial schematic view of the first surface of the substrate of the solar cell in an embodiment of the present application;

[0021] Figure 3 It is a partial schematic view of the first surface of the substrate of the solar cell in another embodiment of the present application;

[0022] Figure 4 It is a partial schematic view of the first fine grid and the first sub-region corresponding thereto in an embodiment of the present application;

[0023] Figure 5 It is a partial schematic view of the center fine grid and the first sub-region corresponding thereto in an embodiment of the present application;

[0024] Figure 6 It is a partial schematic view of the edge fine grid and the first sub-region corresponding thereto in an embodiment of the present application;

[0025] Figure 7 It is a partial schematic view of the first surface of the substrate of the solar cell in another embodiment of the present application;

[0026] Figure 8 a partial view of a first surface of a substrate of a solar cell in another embodiment of the present application;

[0027] Figure 9 a partial view of a first surface of a substrate of a solar cell in another embodiment of the present application;

[0028] Figure 10 a partial view of a first surface of a substrate of a solar cell in another embodiment of the present application;

[0029] Figure 11 a partial view of a first surface of a substrate of a solar cell in another embodiment of the present application;

[0030] Figure 12 a partial view of a first surface of a substrate of a solar cell in another embodiment of the present application;

[0031] Figure 13 a partial view of a first surface of a substrate of a solar cell in another embodiment of the present application;

[0032] Figure 14 a partial view of a first surface of a substrate of a solar cell in another embodiment of the present application;

[0033] Reference Signs:

[0034] 1 - solar cell; 11 - substrate; 111 - first surface; 1111 - first region; 1111a - first sub-region; 1111b - second sub-region; 1112 - second region; 112 - second surface; 12 - tunneling layer; 13 - doped conductive layer; 14 - first passivation layer; 15 - first anti-reflection layer; 16 - first fine grid; 161 - central fine grid; 162 - edge fine grid; 17 - first main grid; 171 - central main grid; 172 - edge main grid; 18 - emitter; 191 - second passivation layer; 192 - second anti-reflection layer; 193 - second fine grid; 100 - photovoltaic module; 10 - cell string; 20 - first cover plate; 30 - first encapsulation layer; 40 - second encapsulation layer; 50 - second cover plate. DETAILED DESCRIPTION

[0035] In order to better understand the technical solutions of the present application, the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0036] It should be clear that the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0037] The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used in the description of the embodiments of the present application and the appended claims, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0038] It should be understood that the term "and / or" used herein is only a description of the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " in this paper generally represents that the front and rear associated objects are in an "or" relationship.

[0039] As shown in the drawings Figure 1 The embodiments of the present application provide a solar cell 1, which includes a substrate 11, which can be an N-type substrate or a P-type substrate. The N-type substrate can be a silicon substrate doped with an N-type element, which can be one or a combination of a phosphorus element, an arsenic element, or an antimony element, etc. The P-type substrate can be a silicon substrate doped with a P-type element, which can be one or a combination of a boron element, an indium element, or a gallium element, etc. The structure of the solar cell 1 will be described below taking the N-type substrate as an example.

[0040] The substrate 11 has a first surface 111 and a second surface 112 arranged opposite to each other along its own thickness direction Z. The first surface 111 can be the back surface of the substrate 11, i.e. the surface not directly illuminated by sunlight. The second surface 112 can be the front surface of the substrate 11, i.e. the surface that can be directly illuminated by sunlight. Both the first surface 111 and the second surface 112 can receive sunlight and convert light energy into electrical energy.

[0041] As shown in the drawings Figure 2 , the first surface 111 includes a first region 1111 and a second region 1112. The first region 1111 includes a first sub-region 1111a, which is arranged alternately with the second region 1112 along a first direction X, which is orthogonal to the thickness direction Z of the substrate 11.

[0042] The tunneling layer 12 is arranged on the first region 1111, and the tunneling layer 12 can include at least one of silicon oxide, aluminum oxide, silicon nitride, silicon oxynitride, amorphous silicon, and polycrystalline silicon. The lattice of the tunneling layer 12 can be well matched with the lattice of the substrate 11, i.e. the tunneling layer 12 can well passivate the first surface 111 of the substrate 11, so as to reduce the rate of recombination of photo-generated electrons and photo-generated holes in the substrate 11 at the first surface 111 of the substrate 11.

[0043] In some embodiments, the thickness of the tunneling layer 12 along the thickness direction Z of the substrate 11 can be 0.5 nm to 2 nm, for example, 0.5 nm, 0.8 nm, 1 nm, 1.2 nm, 1.4 nm, 1.6 nm, 1.8 nm, or 2 nm, and of course other values within the range can also be used. By limiting the thickness of the tunneling layer 12, the tunneling layer 12 has good passivation performance and is easy to transport carriers.

[0044] The doped conductive layer 13 is disposed on the side of the tunneling layer 12 away from the substrate 11 along the thickness direction Z of the substrate 11. The tunneling layer 12 and the doped conductive layer 13 can form a tunneling passivation contact structure, causing the first surface 111 of the substrate 11 to have a band bending, forming a field passivation effect, thereby realizing selective transport of carriers and reducing recombination loss. Specifically, the doping elements in the doped conductive layer 13 are the same as the doping elements in the substrate 11. For example, when the substrate 11 is an N-type substrate 11, the doped conductive layer 13 can be an N-type doped conductive layer, which can include at least one of N-type doped amorphous silicon, N-type doped polysilicon, N-type doped microcrystalline silicon, and N-type doped silicon carbide. The tunneling passivation contact structure formed by the tunneling layer 12 and the doped conductive layer 13 can improve the efficiency of the doped conductive layer 13 in collecting electrons, greatly increasing the probability of electron tunneling, thereby facilitating the improvement of the open-circuit voltage and short-circuit current of the solar cell 1, and further improving the photoelectric conversion efficiency of the solar cell 1.

[0045] The projection of the tunneling layer 12 along the thickness direction Z of the substrate 11 coincides with the first region 1111, and the projection of the doped conductive layer 13 also coincides with the first region 1111.

[0046] The first passivation layer 14 is disposed on the side of the doped conductive layer 13 away from the tunneling layer 12 and on the second region 1112. The first passivation layer 14 can be an aluminum oxide layer, which can enhance the surface carrier concentration of the solar cell 1, improve the short-circuit current and open-circuit voltage of the solar cell 1, and thereby improve the photoelectric conversion efficiency of the solar cell 1. The first passivation layer 14 along the thickness direction Z of the substrate 11.

[0047] In some embodiments, the thickness of the first passivation layer 14 is 2 nm to 10 nm, for example, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, or 10 nm, and of course other values within the range can also be used. By limiting the thickness of the first passivation layer 14, the first passivation layer 14 can have good passivation effect.

[0048] The first anti-reflective layer 15 is disposed on the side of the first passivation layer 14 away from the substrate 11, and the first anti-reflective layer 15 can be one or a combination of silicon oxide, silicon nitride, and silicon oxynitride. Taking silicon nitride as an example, the silicon nitride can play a field passivation role to reduce the recombination of carriers. At the same time, the silicon nitride also has an anti-reflective function, which can reduce the reflection of sunlight. By disposing the first anti-reflective layer 15 on the first surface 111 of the substrate 11, the light transmittance of the back surface of the solar cell 1 can be improved, the carrier concentration on the surface of the substrate 11 can be enhanced, the short-circuit current and the open-circuit voltage of the solar cell 1 can be improved, and the photoelectric conversion efficiency of the solar cell 1 can be improved.

[0049] In some embodiments, the thickness of the first anti-reflective layer 15 along the thickness direction Z of the substrate 11 is 30 nm to 150 nm, for example, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, or 150 nm, and of course other values within the range can also be used. By limiting the thickness of the first anti-reflective layer 15, the passivation effect and the anti-reflective effect of the first anti-reflective layer 15 can be ensured, thereby improving the photoelectric conversion efficiency of the solar cell 1.

[0050] The first fine grid 16 (i.e., the metal electrode) can be prepared from a metal paste, and specifically, the metal paste can be one or a combination of aluminum, silver, nickel, copper, and molybdenum. Figure 3 As shown, the first fine grid 16 is distributed along the first direction X and is disposed one-to-one on the first sub-region 1111a, that is, along the thickness direction Z of the substrate 11, the projection of the first fine grid 16 is located within the corresponding first sub-region 1111a. At least part of the structure of the first fine grid 16 penetrates the first anti-reflective layer 15 and the first passivation layer 14 and is electrically connected (i.e., ohmic connection) with the doped conductive layer 13 to collect and transmit the current on the solar cell 1.

[0051] In the related art, the tunneling layer and the doped conductive layer are arranged on the first region and the second region of the first surface of the substrate, that is, the tunneling layer and the doped conductive layer are arranged on the entire first surface. The thickness of the tunneling layer on the first region is usually the same as the thickness of the tunneling layer on the second region, and the thickness of the doped conductive layer on the first region is usually the same as the thickness of the doped conductive layer on the second region. The first fine grid of the solar cell is arranged only on the first region, so the doped conductive layer on the first region plays a role of passivation and forming an ohmic connection with the first fine grid. The second region is not provided with the first fine grid, so the doped conductive layer on the second region only plays a role of passivation. In order to ensure that the doped conductive layer and the first fine grid form a good ohmic contact and ensure the passivation effect of the doped conductive layer, the thickness of the doped conductive layer on the first region is usually more than 100 nm. However, for the doped conductive layer on the second region, a thickness of about 30 nm can usually meet the passivation requirement, and with the increase of the thickness of the doped conductive layer on the second region, the light parasitic absorption of the doped conductive layer on the second region will increase, which will cause the short-circuit current of the solar cell to decrease and affect the photoelectric conversion efficiency of the solar cell.

[0052] In the embodiment of the present application, the tunneling layer 12 and the doped conductive layer 13 are arranged only on the first region 1111, so that the first fine grid 16 can form a good ohmic contact with the doped conductive layer 13. The tunneling layer 12 and the doped conductive layer 13 are not arranged on the second region 1112, so as to reduce the light parasitic absorption, improve the short-circuit current of the solar cell 1, and improve the photoelectric conversion efficiency of the solar cell 1. At the same time, the first passivation layer 14 and the first anti-reflection layer 15 are arranged on the second region 1112, and the first passivation layer 14 and the first anti-reflection layer 15 can play a good passivation effect on the second region 1112. Therefore, the embodiment of the present application can reduce the light parasitic absorption of the doped conductive layer 13 while ensuring the passivation performance and contact performance of the first surface 111 of the substrate 11 of the solar cell 1, thereby improving the photoelectric conversion efficiency of the solar cell 1.

[0053] As Figure 3As shown, the distance L1 between the edge of the first fine grid 16 and the corresponding first sub-region 1111a in the first direction X satisfies: 50 pm≤L1≤800 pm. As mentioned above, along the thickness direction Z of the substrate 11, the projection of the doped conductive layer 13 coincides with the first region 1111, therefore, the distance L1 between the edge of the first fine grid 16 and the corresponding first sub-region 1111a in the first direction X can also be understood as the distance between the edge of the first fine grid 16 and the corresponding first sub-region 1111a and the edge of the doped conductive layer 13 in the first direction X. Specifically, L1 can be 50 pm, 100 pm, 150 pm, 200 pm, 250 pm, 300 pm, 350 pm, 400 pm, 450 pm, 500 pm, 550 pm, 600 pm, 650 pm, 700 pm, 750 pm or 80 pm, and of course can also be other values within the above range.

[0054] The first fine grid 16 is electrically connected (ohmic contact) with the doped conductive layer 13, and after the carriers enter the doped conductive layer 13 through the tunneling layer 12, the carriers can move in the doped conductive layer 13 along the first direction X, so as to be collected by the first fine grid 16, and the movement of the carriers in the doped conductive layer 13 along the first direction X is also referred to as lateral transport of the carriers. If the distance L1 is too small, for example, L1 is less than 50 pm, so that the size of the first sub-region 1111a in the first direction X is too small, that is, the size of the doped conductive layer 13 in the first direction X is too small, which reduces the channel for lateral transport of the carriers and affects the rate of lateral transport of the carriers, thereby affecting the photoelectric conversion efficiency of the solar cell 1. At the same time, if the size of the first sub-region 1111a in the first direction X is too small, it will also affect the stability of the electrical connection between the first fine grid 16 and the doped conductive layer 13, and affect the printing of the metal paste in the metallization process, thereby increasing the difficulty of preparing the first fine grid 16. If the distance L1 is too large, for example, L1 is greater than 800 pm, so that the size of the first sub-region 1111a in the first direction X is too large, that is, the size of the doped conductive layer 13 in the first direction X is too large, which is easy to increase the light parasitic absorption of the doped conductive layer 13, resulting in a decrease in the short-circuit current of the solar cell 1. Therefore, by designing the distance L1 to be 50 pm to 800 pm, the light parasitic absorption of the doped conductive layer 13 can be reduced while the rate of lateral transport of the carriers is ensured, so as to improve the photoelectric conversion efficiency of the solar cell 1, and facilitate the preparation of the first fine grid 16.

[0055] As shown in FIG. 1, the solar cell 1 includes a substrate 11, a tunneling layer 12, a doped conductive layer 13, a first fine grid 16, a second fine grid 17, a first electrode 18 and a second electrode 19. Figure 4As shown, in some embodiments, along the first direction X, the first fine grid 16 includes a first end and a second end, and the first sub-region 1111a corresponding to the first fine grid 16 includes a first edge and a second edge. The distance from the first end to the first edge is L1a, and L1a satisfies: 50 μm≤L1a≤800 μm. The distance from the second end to the second edge is L1b, and L1b satisfies: 50 μm≤L1b≤800 μm. Here, L1a and L1b can be the same or different.

[0056] As shown in FIG. 1, in some embodiments, along the first direction X, the first fine grid 16 includes a first end and a second end, and the first sub-region 1111a corresponding to the first fine grid 16 includes a first edge and a second edge. The distance from the first end to the first edge is L1a, and L1a satisfies: 50 μm≤L1a≤800 μm. The distance from the second end to the second edge is L1b, and L1b satisfies: 50 μm≤L1b≤800 μm. Here, L1a and L1b can be the same or different. Figure 5 Figure 6 As shown in FIG. 1, in some embodiments, along the first direction X, the first fine grid 16 includes a first end and a second end, and the first sub-region 1111a corresponding to the first fine grid 16 includes a first edge and a second edge. The distance from the first end to the first edge is L1a, and L1a satisfies: 50 μm≤L1a≤800 μm. The distance from the second end to the second edge is L1b, and L1b satisfies: 50 μm≤L1b≤800 μm. Here, L1a and L1b can be the same or different.

[0057] As shown in FIG. 1, in some embodiments, along the first direction X, the first fine grid 16 includes a first end and a second end, and the first sub-region 1111a corresponding to the first fine grid 16 includes a first edge and a second edge. The distance from the first end to the first edge is L1a, and L1a satisfies: 50 μm≤L1a≤800 μm. The distance from the second end to the second edge is L1b, and L1b satisfies: 50 μm≤L1b≤800 μm. Here, L1a and L1b can be the same or different.

[0058] ​In the process of preparing the solar cell 1, the doped conductive layer 13 can be deposited on the side of the tunneling layer 12 away from the substrate 11 by physical vapor deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, etc. Due to the limitation of the production process, the thickness of the doped conductive layer 13 can be non-uniform, for example, the thickness of the doped conductive layer 13 corresponding to the center position of the substrate 11 is larger, and the thickness of the doped conductive layer 13 corresponding to the edge position of the substrate 11 is smaller. At this time, the distance L11 between the center fine grid 161 and the edge of the first sub-area 1111a corresponding thereto in the first direction X can be reduced, and the distance L12 between the edge fine grid 162 and the edge of the first sub-area 1111a corresponding thereto in the first direction X can be increased, so that the distance L11 is smaller than the distance L12. Since the thickness of the doped conductive layer 13 corresponding to the center position of the substrate 11 is larger, by reducing the distance L11, the size of the doped conductive layer 13 in the first direction X on the first sub-area 1111a corresponding to the center fine grid 161, i.e. the size of the doped conductive layer 13 in the first direction X corresponding to the center position of the substrate 11, is reduced, so as to reduce the optical parasitic absorption of the doped conductive layer 13. Since the thickness of the doped conductive layer 13 corresponding to the edge position of the substrate 11 is smaller, by increasing the distance L12, the size of the doped conductive layer 13 in the first direction X on the first sub-area 1111a corresponding to the edge fine grid 162, i.e. the size of the doped conductive layer 13 in the first direction X corresponding to the edge position of the substrate 11 in the first direction X, is increased, so as to improve the passivation performance of the doped conductive layer 13 corresponding to the edge position of the substrate 11, while ensuring that the edge fine grid 162 can form a good ohmic connection with the doped conductive layer 13.

[0059] In other embodiments, the thickness of the doped conductive layer 13 corresponding to the center position of the substrate 11 is smaller, and the thickness of the doped conductive layer 13 corresponding to the edge position of the substrate 11 is larger, at this time, the distance L11 between the center fine grid 161 and the edge of the first sub-area 1111a corresponding thereto in the first direction X can be increased, and the distance L12 between the edge fine grid 162 and the edge of the first sub-area 1111a corresponding thereto in the first direction X can be reduced, so that the distance L11 is greater than the distance L12.

[0060] In summary, for the case that the thickness of the doped conductive layer 13 is non-uniform, the distance L12 and the distance L11 described above can be adjusted, so as to adjust the size of the first sub-area 1111a at different positions of the substrate 11, i.e. to adjust the size of the doped conductive layer 13 on the first sub-area 1111a, so as to reduce the optical parasitic absorption of the doped conductive layer 13 while ensuring the passivation performance and contact performance of the doped conductive layer 13, thereby improving the photoelectric conversion efficiency of the solar cell 1 and ensuring the performance of the solar cell 1.

[0061] It should be noted that the center position of the substrate 11 mentioned above is a region, not a specific point at the center of the substrate 11. Multiple first fine grids 16 can be set within this region. That is, the number of central fine grids 161 can be one, two, three, or more. Similarly, the edge position of the substrate 11 is also a region, not a specific point at the edge of the substrate 11. Multiple first fine grids 16 can be set within this region. That is, the number of edge fine grids 162 can be one, two, three, or more.

[0062] like Figure 5 As shown, in one possible implementation, the distance L11 between the edge of the central fine grid 161 and the edge of its corresponding first sub-region 1111a in the first direction X satisfies: 100μm≤L11≤400μm, for example, 100μm, 120μm, 140μm, 150μm, 160μm, 180μm, 200μm, 220μm, 220μm, 250μm, 260μm, 280μm, 300μm, 320μm, 350μm, 360μm, 380μm or 400μm, or other values ​​within the above range.

[0063] like Figure 6 As shown, the distance L12 between the edge fine grid 162 and the edge of its corresponding first sub-region 1111a in the first direction X satisfies: 50μm≤L2≤800μm, for example, 50μm, 100μm, 150μm, 200μm, 250μm, 300μm, 350μm, 400μm, 450μm, 500μm, 550μm, 600μm, 650μm, 700μm, 750μm, or 800μm. Of course, other values ​​within the above range are also possible.

[0064] As mentioned above, due to limitations in the manufacturing process, the thickness of the doped conductive layer 13 is uneven. The size of the first sub-region 1111a at different locations on the substrate 11 can be adjusted, that is, the size of the doped conductive layer 13 at different locations on the substrate 11 can be adjusted so that the distance L12 is greater than or less than the distance L11. This reduces photoparasitic absorption of the doped conductive layer 13 while ensuring its passivation and contact properties, thereby improving the photoelectric conversion efficiency of the solar cell 1 and ensuring its performance. Simultaneously, by limiting the range of values ​​for distances L11 and L12, the size of the doped conductive layer 13 at each location is kept within a reasonable range to ensure the rate of lateral carrier transport, thereby further improving the photoelectric conversion efficiency of the solar cell 1.

[0065] In some embodiments, the above-mentioned solar cell can be a 0-Busbar (0-BB) solar cell, that is, no main busbar is arranged on the first surface and the second surface of the substrate, and the solar cell can use a solder strip to replace the original main busbar. Since the main busbar does not need to be arranged again, the consumption of metal paste is reduced, thereby reducing the production cost of the solar cell.

[0066] As shown in FIG. 1, in some embodiments, the solar cell 1 further includes a first main busbar 17 arranged along a second direction Y orthogonal to the first direction X. Along the thickness direction Z of the substrate 11, the first main busbar 17 is located on the side of the first fine busbar 16 away from the substrate 11 and is electrically connected with the first fine busbar 16. The first main busbar 17 can collect the current collected by the first fine busbar 16, facilitating the export of the current. Along the thickness direction Z of the substrate 11, a part of the structure of the first main busbar 17 is projected into the first sub-region 1111a, and another part of the structure of the first main busbar 17 is projected into the second region 1112. Figure 7 As shown in FIG. 1, in some embodiments, the first region 1111 further includes a second sub-region 1111b connected between any two adjacent first sub-regions 1111a and arranged alternately with the second region 1112 along the second direction Y. The second sub-region 1111b can connect the two adjacent first sub-regions 1111a, so that the carriers between the doped conductive layers on the two adjacent first sub-regions 1111a can be transmitted along the first direction X through the doped conductive layer arranged on the second sub-region 1111b. Therefore, by arranging the second sub-region 1111b, the carriers can be transmitted laterally along the first direction X, thereby facilitating the collection of the carriers by the first fine busbar 16, and thus improving the efficiency of the solar cell 1.

[0067] Figure 8 As shown in FIG. 1, in some embodiments, the first region 1111 further includes a second sub-region 1111b connected between any two adjacent first sub-regions 1111a and arranged alternately with the second region 1112 along the second direction Y. The second sub-region 1111b can connect the two adjacent first sub-regions 1111a, so that the carriers between the doped conductive layers on the two adjacent first sub-regions 1111a can be transmitted along the first direction X through the doped conductive layer arranged on the second sub-region 1111b. Therefore, by arranging the second sub-region 1111b, the carriers can be transmitted laterally along the first direction X, thereby facilitating the collection of the carriers by the first fine busbar 16, and thus improving the efficiency of the solar cell 1.

[0068] As shown in FIG. 1, in some embodiments, the first region 1111 further includes a second sub-region 1111b connected between any two adjacent first sub-regions 1111a and arranged alternately with the second region 1112 along the second direction Y. The second sub-region 1111b can connect the two adjacent first sub-regions 1111a, so that the carriers between the doped conductive layers on the two adjacent first sub-regions 1111a can be transmitted along the first direction X through the doped conductive layer arranged on the second sub-region 1111b. Therefore, by arranging the second sub-region 1111b, the carriers can be transmitted laterally along the first direction X, thereby facilitating the collection of the carriers by the first fine busbar 16, and thus improving the efficiency of the solar cell 1. Figure 9 As shown in FIG. 1, in some embodiments, the first region 1111 further includes a second sub-region 1111b connected between any two adjacent first sub-regions 1111a and arranged alternately with the second region 1112 along the second direction Y. The second sub-region 1111b can connect the two adjacent first sub-regions 1111a, so that the carriers between the doped conductive layers on the two adjacent first sub-regions 1111a can be transmitted along the first direction X through the doped conductive layer arranged on the second sub-region 1111b. Therefore, by arranging the second sub-region 1111b, the carriers can be transmitted laterally along the first direction X, thereby facilitating the collection of the carriers by the first fine busbar 16, and thus improving the efficiency of the solar cell 1.

[0069] ​The first region 1111 also includes a second sub-region 1111b, which connects any two adjacent first sub-regions 1111a. In other words, the second sub-region 1111b can connect two adjacent first sub-regions 1111a. The second sub-region 1111b is arranged alternately with the second region 1112 along the second direction Y and corresponds to the first main grid 17. As mentioned above, the second sub-region 1111b facilitates the lateral transport of charge carriers along the first direction X, thereby making it easier for the first fine grid 16 to collect charge carriers and improve the efficiency of the solar cell 1.

[0070] like Figure 9 As shown, in one possible implementation, the distance L2 between the edges of the first main gate 17 and its corresponding second sub-region 1111b in the second direction Y satisfies: 0 μm ≤ L11 ≤ 400 μm. As mentioned above, along the thickness direction Z of the substrate 11, the projection of the doped conductive layer 13 coincides with the first region 1111. Therefore, the distance between the edges of the first main gate 17 and its corresponding second sub-region 1111b in the second direction Y is the same as the distance between the edges of the doped conductive layer 13 on the first main gate 17 and its corresponding second sub-region 1111b.

[0071] Specifically, L2 can be 0 μm, 10 μm, 50 μm, 100 μm, 120 μm, 140 μm, 160 μm, 180 μm, 200 μm, 220 μm, 240 μm, 260 μm, 280 μm, 300 μm, 320 μm, 340 μm, 360 μm, 380 μm, or 400 μm, or other values ​​within the above range. As mentioned above, charge carriers can be transported laterally through the doped conductive layer 13 on the second sub-region 1111b. Therefore, by limiting the distance L2 between the first main gate 17 and the edge of the corresponding second sub-region 1111b in the second direction Y, it is possible to reduce the photoparasitic absorption of the doped conductive layer 13 while providing a channel for the lateral transport of charge carriers, thereby improving the photoelectric conversion efficiency of the solar cell 1.

[0072] In some embodiments, the distance L2 between the edges of the first main gate 17 and its corresponding second sub-region 1111b in the second direction Y is greater than 0 μm, so that the size of the second sub-region 1111b in the second direction Y is greater than the size of the first main gate 17, which facilitates the printing of metal paste and the preparation of the first main gate 17.

[0073] like Figure 10As shown in some embodiments, along the second direction Y, the first main grid 17 includes a third end and a fourth end, and the second sub-region 1111b corresponding to the first fine grid 16 includes a third edge and a fourth edge. The distance from the third end to the third edge is L2a, and L2a satisfies: 0 μm≤L11≤400 μm. The distance from the fourth end to the fourth edge is L2b, and L2b satisfies: 0 μm≤L11≤400 μm. Wherein, L2a and L2b can be the same or different.

[0074] As shown in some embodiments, Figure 11 and Figure 12 As shown in a possible implementation, along the second direction Y, the first main grid 17 located at the center position of the substrate 11 is a center main grid 171, and the first main grid 17 located at the edge position of the substrate 11 is an edge main grid 172. The distance from the center main grid 171 to the edge of the second sub-region 1111b corresponding thereto in the second direction Y is L21, and the distance from the edge main grid 172 to the edge of the second sub-region 1111b corresponding thereto in the second direction Y is L22. L21 is greater than L22, or L21 is less than L22.

[0075] The distance from the center main grid 171 to the edge of the second sub-region 1111b corresponding thereto in the second direction Y is the distance from the center main grid 171 to the edge of the doped conductive layer 13 on the second sub-region 1111b corresponding thereto in the second direction Y. Similarly, the distance from the edge main grid 172 to the edge of the second sub-region 1111b corresponding thereto in the second direction Y is the distance from the edge main grid 172 to the edge of the doped conductive layer 13 on the second sub-region 1111b corresponding thereto in the second direction Y.

[0076] As mentioned above, due to the limitation of the production process, the thickness of the doped conductive layer 13 can be non-uniform, and therefore the distance L22 and the distance L21 can be adjusted to adjust the size of the second sub-region 1111b at different positions of the substrate 11, i.e. to adjust the size of the doped conductive layer 13 on the second sub-region 1111b, so as to reduce the optical parasitic absorption of the doped conductive layer 13, ensure the passivation performance and contact performance of the doped conductive layer 13, and improve the photoelectric conversion efficiency of the solar cell 1 and ensure the performance of the solar cell 1.

[0077] As shown in some embodiments, Figure 13As shown, in a possible implementation, along the thickness direction Z of the substrate 11, the thickness D1 of the doped conductive layer 13 satisfies: 60 nm≤D1≤300 nm, for example, D1 can be 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 120 nm, 140 nm, 160 nm, 180 nm, 200 nm, 220 nm, 240 nm, 260 nm, 280 nm or 300 nm, and of course can also be other values within the above range. If the thickness D1 of the doped conductive layer 13 is too small, for example, less than 60 nm, the contact area of the first fine grid 16 and the doped conductive layer 13 will be reduced, the contact resistivity of the first fine grid 16 will be increased, thereby affecting the photoelectric conversion efficiency of the solar cell 1, and also affecting the passivation performance of the doped conductive layer 13. If the thickness D1 of the doped conductive layer 13 is too large, for example, greater than 300 nm, the optical parasitic absorption of the doped conductive layer 13 will be increased, resulting in a decrease in the short-circuit current of the solar cell 1, and also affecting the photoelectric conversion efficiency of the solar cell 1. Therefore, by designing the thickness D1 of the doped conductive layer 13 to be 60 nm to 300 nm, it is beneficial to reduce the contact resistivity of the first fine grid 16, ensure the passivation performance of the doped conductive layer 13, and at the same time reduce the optical parasitic absorption of the doped conductive layer 13, so as to ensure the photoelectric conversion efficiency of the solar cell 1.

[0078] As shown, Figure 13 In a possible implementation, along the thickness direction Z of the substrate 11, the distance H between the first region 1111 and the second region 1112 satisfies: 0.5 μm≤H≤10 μm.

[0079] Along the thickness direction Z of the substrate 11, there is a height difference H between the first region 1111 and the second region 1112. H can be 0.5μm, 1μm, 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm, 5μm, 5.5μm, 6μm, 6.5μm, 7μm, 7.5μm, 8μm, 8.5μm, 9μm, 9.5μm, or 10μm, or other values ​​within the above range. The height difference between the first region 1111 and the second region 1112 makes the first surface 111 of the substrate 11 have an uneven shape, so that sunlight can be reflected multiple times on the surface of the substrate 11, thereby improving the absorption efficiency of sunlight by the solar cell 1 and thus improving the light conversion efficiency of the solar cell 1. If the height difference between the first region 1111 and the second region 1112 is too small, for example, H is less than 0.5 μm, it will be difficult for sunlight to be reflected multiple times on the first surface 111 of the substrate 11, affecting the absorption of sunlight by the solar cell 1. If the height difference between the first region 1111 and the second region 1112 is too large, for example, H is greater than 10 μm, it will affect the stability of the film layer (e.g., the first passivation layer 14, the first antireflection layer 15) above the junction of the first region 1111 and the second region 1112, causing the film layer to crack, thereby affecting the passivation effect of the film layer on the surface of the substrate 11. Therefore, designing the height difference between the first region 1111 and the second region 1112 to be between 0.5 μm and 10 μm is beneficial to improving the absorption efficiency of sunlight by the solar cell 1 while ensuring the passivation effect of the surface of the substrate 11, so as to achieve the optimal performance of the solar cell 1.

[0080] like Figure 13 As shown, in some embodiments, along the thickness direction Z of the substrate 11, the first region 1111 is located on the side of the second region 1112 away from the second surface 112 of the substrate 11. That is, the first region 1111 protrudes outward from the substrate 11 relative to the second region 1112, thereby forming the aforementioned height difference H between the first region 1111 and the second region 1112. This design facilitates the identification and alignment of the first region 1111 during the fabrication of the first fine gate 16, thus simplifying the fabrication of the first fine gate 16.

[0081] like Figure 13 As shown, in one possible embodiment, the solar cell 1 includes an emitter 18, a second passivation layer 191, and a second antireflection layer 192. The substrate 11 has a second surface 112 opposite to the first surface 111 along its own thickness direction Z. The emitter 18 is formed inside or above the second surface 112. Along the thickness direction Z of the substrate 11, the second passivation layer 191 is located on the side of the emitter 18 away from the substrate 11, and the second antireflection layer 192 is located on the side of the second passivation layer 191 away from the substrate 11.

[0082] The emitter 18 and the substrate 11 can jointly form a PN junction structure, wherein when the substrate 11 is the N-type substrate 11, the emitter 18 can be a P-type emitter 18. The second passivation layer 191 is arranged on the side of the emitter 18 away from the substrate 11, and the second passivation layer 191 can be an aluminum oxide layer. The second passivation layer 191 can have a good passivation effect on the second surface 112 of the substrate 11, thereby facilitating the improvement of the photoelectric conversion efficiency of the solar cell 1. The second anti-reflection layer 192 can be one or a combination of silicon oxide, silicon nitride, and silicon oxynitride. The second anti-reflection layer 192 can have a field passivation effect, reduce the recombination of carriers, and also has an anti-reflection function, thereby reducing the reflection of sunlight. Arranging the second anti-reflection layer 192 on the second surface 112 of the substrate 11 can improve the light transmittance of the front surface of the solar cell 1, increase the carrier concentration on the surface of the substrate 11, improve the short-circuit current and open-circuit voltage of the solar cell 1, and improve the photoelectric conversion efficiency of the solar cell 1.

[0083] As shown in FIG. 1, Figure 13 In some embodiments, the solar cell 1 includes a second fine grid 193 arranged on the side of the emitter 18 away from the substrate 11, and at least part of the structure of the second fine grid 193 penetrates the second passivation layer 191 and the second anti-reflection layer 192 and is electrically connected with the emitter 18. The second fine grid 193 can be prepared from a metal paste, and specifically, the metal paste can be one or a combination of aluminum, silver, nickel, copper, and molybdenum.

[0084] The embodiment of the present application provides a laminated cell, which includes a crystalline silicon bottom cell and a perovskite top cell. The crystalline silicon bottom cell includes any one of the solar cells described above, and the perovskite top cell is electrically connected with the crystalline silicon bottom cell.

[0085] The perovskite top cell can include a substrate material, a conductive thin film, an electron transport layer (titanium dioxide), a perovskite absorption layer (a hole transport layer), and a metal cathode. The perovskite material has a high light absorption coefficient and a long carrier diffusion distance. After the photons absorbed by the perovskite material are converted into electrons, the electrons are easily collected by the electrode and have low loss, thereby generating a high photovoltage and current, and making the perovskite exhibit a high photoelectric conversion efficiency.

[0086] The solar cell and the perovskite cell are combined to form the laminated cell, which can absorb a wider range of sunlight spectrum, thereby improving the photoelectric conversion efficiency of the laminated cell. Since the solar cell has the technical effects described above, the laminated assembly including the solar cell also has the technical effects described above, which will not be described herein again.

[0087] As shown in FIG. 1, Figure 14As shown, the embodiment of the present application provides a photovoltaic module 100, which comprises a cover plate, an encapsulation layer and at least one cell string 10, the encapsulation layer is located between the cover plate and the cell string 10, the cover plate is connected with the cell string 10 through the encapsulation layer, and the cell string 10 comprises a plurality of solar cells 1 in any one of the above.

[0088] The cover plate can comprise a first cover plate 20 and a second cover plate 50, the first cover plate 20 can be located at the upper layer of the photovoltaic module 100, and the second cover plate 50 can be located at the lower layer of the photovoltaic module 100. The encapsulation layer comprises a first encapsulation layer 30 and a second encapsulation layer 40, the first encapsulation layer 30 can be located between the first cover plate 20 and the cell string 10, and the second encapsulation layer 40 can be located between the second cover plate 50 and the cell string 10.

[0089] The first cover plate 20, the first encapsulation layer 30, the cell string 10, the second encapsulation layer 40 and the second cover plate 50 can be arranged along the thickness direction ZZ of the photovoltaic module 100 and laminated together. The first cover plate 20 can be a glass cover plate, and the first cover plate 20 has a high light transmittance. The first encapsulation layer 30 bonds the first cover plate 20 and the cell string 10 together to play a role of encapsulation protection for the cell string 10, and the material of the first encapsulation layer 30 can be one or more of ethylene-vinyl acetate copolymer (EVA), polyolefin elastomer (POE) and polyvinyl butyral (PVB). The second encapsulation layer 40 connects the cell layer and the second cover plate 50 together, which also plays a role of encapsulation protection for the cell string 10, and the material of the second encapsulation layer 40 can be one or more of the above-mentioned EVA, POE and PVB. The material of the second cover plate 50 can be glass, or the second cover plate 50 can also be composed of a plurality of polymer film layers.

[0090] Since the solar cell 1 has the above technical effects, the photovoltaic module 100 with the solar cell 1 also has the above technical effects, which will not be described here.

[0091] The above only describes the preferred embodiments of the present application and is not used to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A solar cell, characterized in that, include: The substrate has a first surface along its own thickness direction, the first surface including a first region and a second region, the first region including a first sub-region, the first sub-region being alternately arranged with the second region along a first direction, the first direction being orthogonal to the thickness direction of the substrate; A tunneling layer is disposed on the first region; A doped conductive layer is disposed on the side of the tunneling layer away from the substrate; A first passivation layer is disposed on the side of the doped conductive layer away from the tunneling layer and on the second region; A first antireflection layer is disposed on the side of the first passivation layer away from the substrate; The first fine gate is distributed along the first direction and is disposed on the first sub-region in a one-to-one correspondence. At least a portion of the structure of the first fine gate penetrates the first anti-reflection layer and the first passivation layer and is electrically connected to the doped conductive layer. The distance L1 between the edge of the first fine gate and the edge of the corresponding first sub-region in the first direction satisfies: 50μm≤L1≤800μm. Along the first direction, the first fine grid located at the center of the substrate is a center fine grid, and the first fine grid located at the edge of the substrate is an edge fine grid; The distance between the edge of the central fine grid and the edge of the corresponding first sub-region in the first direction is L11; The distance between the edge grid and the edge of the corresponding first sub-region in the first direction is L12; L11 is greater than L12, or L11 is less than L12.

2. The solar cell according to claim 1, characterized in that, The distance L11 between the edge of the central fine grid and the edge of the corresponding first sub-region in the first direction satisfies: 100μm≤L11≤400μm, and; The distance L12 between the edge fine grid and the edge of the corresponding first sub-region in the first direction satisfies: 50μm≤L2≤800μm.

3. The solar cell according to claim 1, characterized in that, The solar cell further includes a first main grid, which is arranged along a second direction orthogonal to the first direction. Along the thickness direction of the substrate, the first main grid is located on the side of the first fine grid away from the substrate and is electrically connected to the first fine grid. The first region further includes a second sub-region, which is connected between any two adjacent first sub-regions. The second sub-region is arranged alternately with the second region along the second direction and is correspondingly arranged with the first main gate. Along the thickness direction of the substrate, the projection of a part of the structure of the first main gate is located within the first sub-region, and the projection of another part of the structure of the first main gate is located within the second sub-region.

4. The solar cell according to claim 3, characterized in that, The distance L2 between the edge of the first main gate and its corresponding second sub-region in the second direction satisfies: 0μm≤L11≤400μm.

5. The solar cell according to claim 4, characterized in that, Along the second direction, the first main gate located at the center of the substrate is the center main gate, and the first main gate located at the edge of the substrate is the edge main gate; The distance between the edge of the central main grid and the edge of the corresponding second sub-region in the second direction is L21; The distance between the edge main grid and the edge of the corresponding second sub-region in the second direction is L22; L21 is greater than L22, or L21 is less than L22.

6. The solar cell according to any one of claims 1 to 5, characterized in that, Along the thickness direction of the substrate, the thickness D1 of the doped conductive layer satisfies: 60nm≤D1≤300nm.

7. The solar cell according to any one of claims 1 to 5, characterized in that, Along the thickness direction of the substrate, the distance from the first region to the second region is H, where H satisfies: 0.5μm≤H≤10μm.

8. The solar cell according to claim 7, characterized in that, The solar cell includes an emitter, a second passivation layer, and a second antireflection layer; The substrate has a second surface opposite to the first surface along its own thickness direction; The emitter is formed inside or above the second surface. Along the thickness direction of the substrate, the second passivation layer is located on the side of the emitter away from the substrate, and the second antireflection layer is located on the side of the second passivation layer away from the substrate.

9. A photovoltaic module, characterized in that, include: Cover plate; At least one battery string, the battery string comprising a plurality of solar cells according to any one of claims 1 to 8; An encapsulation layer is located between the cover plate and the battery string, and the cover plate is connected to the battery string through the encapsulation layer.

10. A stacked battery, characterized in that, include: A crystalline silicon base cell, wherein the crystalline silicon base cell comprises the solar cell according to any one of claims 1 to 8; A perovskite top cell, wherein the perovskite top cell is electrically connected to the crystalline silicon bottom cell.

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