A two-end laminated solar cell module and its preparation method

Abstract

The present invention provides a two-terminal stacked solar cell assembly and a preparation method thereof. The two-terminal stacked solar cell assembly includes a substrate, on which at least two sub-battery units are arranged, and the sub-battery units contain a first isolation groove, a second isolation groove, and a third isolation groove arranged in parallel; the second isolation groove includes a first sub-isolation groove, a second sub-isolation groove, and a third sub-isolation groove which are nested and stacked in sequence and whose groove widths decrease in sequence; the first sub-isolation groove at least penetrates the first carrier transport layer and the wide bandgap perovskite absorption layer; the second sub-isolation groove at least penetrates the tunneling composite layer; the third sub-isolation groove at least penetrates the narrow bandgap perovskite absorption layer and the fourth carrier transport layer. In the assembly, the tunneling composite layer and the back electrode layer will not be in direct contact, thus avoiding short circuit leakage, and the material selection of the tunneling composite layer is wider; the back electrode layer in the third sub-isolation groove is separated from the bottom battery structure, thus avoiding the performance degradation or even failure caused by metal diffusion.

Description

Technical Field

[0001] The invention belongs to the technical field of solar cells, and in particular relates to a two-end stacked solar cell assembly and a preparation method thereof. Background Art

[0002] In a conventional two-terminal stacked solar cell module, taking the inverted (pin) perovskite / perovskite two-terminal stacked solar cell as an example, the preparation method includes: 1. Etching through the transparent bottom electrode through the P1 line to form a break; 2. Depositing the first hole transport layer, wide bandgap perovskite, first electron transport layer, tunneling composite layer, second hole transport layer, narrow bandgap perovskite, and second electron transport layer in sequence on the etched substrate; 3. Etching through the above seven layers of materials through the P2 line until the transparent bottom electrode is exposed; 4. Depositing a layer of back electrode (such as copper, silver, etc.); 5. Etching through the back electrode through the P3 line. Among them, the P2 line runs through the channel filled with back electrode metals such as copper, silver, and gold, resulting in direct contact between the back electrode and the perovskite layer and other functional layers. The metal is easy to diffuse into it, resulting in a decrease in component performance or even failure. At the same time, the tunneling composite layer in this structure is prepared with metal materials such as gold, palladium, silver, titanium, chromium, nickel, aluminum, and copper. Due to the large parasitic absorption of the metal itself, it will affect the light absorption of the narrow-bandgap perovskite and restrict the increase in component current. In addition, since the back electrode metal material is in contact with the tunneling composite layer, it is easy to cause short circuit leakage. Therefore, the material of the tunneling composite layer in this structure can only be a metal material that can form a discontinuous "island structure", and a continuous structure and a material with better conductivity cannot be used, which limits the scope of application.

[0003] Therefore, it is urgent to design a new type of two-terminal stacked solar cell module to avoid direct contact between the tunneling composite layer and the back electrode layer, thereby avoiding short circuit leakage. Summary of the invention

[0004] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a two-terminal stacked solar cell module and a preparation method thereof. In the two-terminal stacked solar cell module provided by the present invention, the tunneling composite layer and the back electrode layer will not be in direct contact, thereby avoiding short circuit leakage, and at the same time, a tunneling composite layer material with a continuous structure, better conductivity and better light transmittance can be used, and the material selection is wide; and the back electrode layer in the third sub-isolation groove is separated from the bottom battery structure, thereby avoiding the phenomenon of component performance degradation or even failure due to metal diffusion.

[0005] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0006] In a first aspect, the present invention provides a two-terminal stacked solar cell assembly, wherein the two-terminal stacked solar cell assembly comprises a substrate, wherein the substrate is provided with at least two sub-battery units, and the sub-battery units comprise a transparent bottom electrode layer, a first carrier transport layer, a wide bandgap perovskite absorption layer, a second carrier transport layer, a tunneling recombination layer, a third carrier transport layer, a narrow bandgap perovskite absorption layer, a fourth carrier transport layer and a back electrode layer sequentially stacked on the substrate.

[0007] The sub-battery unit contains a first isolation groove, a second isolation groove and a third isolation groove arranged in parallel; the first isolation grooves are distributed at intervals on the transparent bottom electrode layer and penetrate the transparent bottom electrode layer; the second isolation groove includes a first sub-isolation groove, a second sub-isolation groove and a third sub-isolation groove which are nested and stacked in sequence, and the groove widths of the first sub-isolation groove, the second sub-isolation groove and the third sub-isolation groove decrease in sequence; the first sub-isolation groove at least penetrates the first carrier transport layer and the wide bandgap perovskite absorption layer, and exposes the transparent bottom electrode layer; the second sub-isolation groove at least penetrates the tunneling composite layer, and exposes the transparent bottom electrode layer; the third sub-isolation groove at least penetrates the narrow bandgap perovskite absorption layer and the fourth carrier transport layer, and exposes the transparent bottom electrode layer; the third isolation groove penetrates the tunneling composite layer, the third carrier transport layer, the narrow bandgap perovskite absorption layer, the fourth carrier transport layer and the back electrode layer.

[0008] The first isolation groove is filled with an extension of the first carrier transport layer, the first sub-isolation groove is at least filled with an extension of the tunneling composite layer, the second sub-isolation groove is at least filled with an extension of the narrow-bandgap perovskite absorption layer and an extension of the fourth carrier transport layer, and the third sub-isolation groove is filled with an extension of the back electrode layer.

[0009] In the two-terminal stacked solar cell module provided by the present invention, the tunneling composite layer and the back electrode layer will not be in direct contact, thereby avoiding short circuit leakage. At the same time, a tunneling composite layer material with a continuous structure, better conductivity and better light transmittance can be used, and the material selection is wide; and the back electrode layer in the third sub-isolation groove is separated from the bottom battery structure (referring to the first carrier transport layer, the wide bandgap perovskite absorption layer and the second carrier transport layer), thereby avoiding the phenomenon of component performance degradation or even failure due to metal diffusion.

[0010] In the present invention, at least two sub-battery units are provided on the substrate, for example, there may be 2, 4, 6, 8 or 10 sub-battery units.

[0011] The present invention stipulates that the widths of the first sub-isolation groove, the second sub-isolation groove and the third sub-isolation groove decrease in sequence, so as to separate the exposed cross section after scribing from the subsequent film layer through the extension part of the adjacent film layer.

[0012] Preferably, the substrate is a glass substrate.

[0013] Preferably, the transparent bottom electrode layer includes any one of an ITO (indium tin oxide) layer, a FTO (fluorine-doped tin oxide) layer or an IZO (indium zinc oxide) layer.

[0014] The present invention does not limit the thickness of the transparent bottom electrode layer, and illustratively, it may be 100 nm, for example.

[0015] Preferably, the first carrier transport layer and the second carrier transport layer transport carriers with opposite electrical properties, and the third carrier transport layer and the fourth carrier transport layer transport carriers with opposite electrical properties.

[0016] Preferably, the first carrier transport layer and the third carrier transport layer are both hole transport layers, and the second carrier transport layer and the fourth carrier transport layer are both electron transport layers.

[0017] Preferably, the thickness of the hole transport layer is 20-40 nm, for example, 20 nm, 30 nm or 40 nm.

[0018] Preferably, the material of the hole transport layer includes copper phthalocyanine, cobalt phthalocyanine, nickel phthalocyanine, nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, cupric oxide, cuprous oxide, cobalt oxide, PTAA (poly (bis (4-phenyl) (2,4,6-trimethylphenyl) amine)), PEDOT:PSS (poly (3,4-ethylenedioxythiophene): polystyrene sulfonic acid), Poly-TPD ((N,N'-bis (4-butylphenyl) -N,N'-bis (phenyl) - benzidine)), Spiro-MeOTAD (2,2',7,7'-tetrakis (N,N-di-p-methoxyaniline) -9,9'-spirobifluorene) any one or a combination of at least two.

[0019] Preferably, the thickness of the electron transport layer is 10-30 nm, for example, 10 nm, 20 nm or 30 nm.

[0020] Preferably, the material of the electron transport layer includes C 60 , fullerene derivatives, tin oxide, titanium oxide, zinc oxide, cadmium sulfide, indium trioxide, tungsten oxide, or any combination of at least two thereof. For example, C 60 Combination of layer and PCBM layer.

[0021] For example, the fullerene derivative may be PCBM ([6,6]-phenyl-C 60 -methyl butyrate) or ICBA (indene-C 61 Double adducts), etc.

[0022] Preferably, the material of the tunneling composite layer includes a metal material or a transparent conductive oxide. Exemplarily, the metal material may be, for example, gold, palladium, silver, titanium, chromium, nickel, aluminum or copper, and the transparent conductive oxide may be, for example, indium tin oxide, indium tungsten oxide, fluorine-doped tin oxide, antimony-doped tin oxide, gallium-doped tin oxide, cerium-doped indium oxide, aluminum-doped zinc oxide or indium-doped cadmium oxide.

[0023] In the two-terminal stacked solar cell assembly provided by the present invention, the tunneling composite layer can be made of different materials, not only metal materials with continuous structure, better conductivity and better light transmittance, but also transparent conductive oxides, with a wide range of material selection and excellent effects.

[0024] Preferably, the thickness of the tunneling composite layer is 1-3 nm, for example, 1 nm, 1.5 nm, 2 nm, 2.5 nm or 3 nm.

[0025] Preferably, the band gap of the wide band gap perovskite absorption layer is greater than or equal to 1.75 eV, for example, it can be 1.75 eV, 1.8 eV, 1.9 eV or 2.0 eV, etc., preferably 1.75-2.3 eV.

[0026] Preferably, the chemical formula of the wide bandgap perovskite absorber layer is ABX 3 , wherein A is selected from any one or a combination of at least two of formamidinium ion, methylamine ion or cesium ion, B is selected from lead ion or tin ion, and X is a halogen ion. For example, Cs 0.35 FA 0.65 PbI 1.8 Br 1.2 .

[0027] Preferably, the band gap of the narrow band gap perovskite absorption layer is less than 1.75 eV, for example, it can be 1.6 eV, 1.5 eV, 1.4 eV or 1.25 eV, etc., preferably 1.1-1.7 eV.

[0028] Preferably, the narrow bandgap perovskite absorber layer has a chemical formula of ABX 3 , wherein A is selected from any one or a combination of at least two of formamidinium ion, methylamine ion or cesium ion, B is selected from lead ion or tin ion, and X is a halogen ion. For example, FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 .

[0029] Preferably, the material of the back electrode layer is a metal material, for example, gold, silver or copper.

[0030] Preferably, the second isolation trench and the third isolation trench are located on the same side of the first isolation trench, and the second isolation trench and the third isolation trench are successively away from the first isolation trench.

[0031] Preferably, the first isolation trench, the second isolation trench and the third isolation trench are not connected to each other.

[0032] Preferably, the width of the first sub-isolation groove is 80-100 µm, for example, 80 µm, 90 µm or 100 µm.

[0033] Preferably, the width of the second sub-isolation trench is 40-70µm, for example, 40µm, 50µm, 60µm or 70µm.

[0034] Preferably, the width of the third sub-isolation groove is 20-40µm, for example, 20µm, 30µm or 40µm.

[0035] Preferably, the first sub-isolation groove runs through the first carrier transport layer and the wide bandgap perovskite absorption layer, the second sub-isolation groove runs through the second carrier transport layer, the tunneling recombination layer and the third carrier transport layer, and the third sub-isolation groove runs through the narrow bandgap perovskite absorption layer and the fourth carrier transport layer.

[0036] Preferably, the first sub-isolation groove is filled with an extension of the second carrier transport layer, an extension of the tunneling composite layer and an extension of the third carrier transport layer, the second sub-isolation groove is filled with an extension of the narrow-bandgap perovskite absorption layer and an extension of the fourth carrier transport layer, and the third sub-isolation groove is filled with an extension of the back electrode layer.

[0037] Preferably, the first sub-isolation groove runs through the first carrier transport layer and the wide bandgap perovskite absorption layer, the second sub-isolation groove runs through the second carrier transport layer and the tunneling recombination layer, and the third sub-isolation groove runs through the third carrier transport layer, the narrow bandgap perovskite absorption layer and the fourth carrier transport layer.

[0038] Preferably, the first sub-isolation groove is filled with an extension of the second carrier transport layer and an extension of the tunneling composite layer, the second sub-isolation groove is filled with an extension of the third carrier transport layer, an extension of the narrow-bandgap perovskite absorption layer and an extension of the fourth carrier transport layer, and the third sub-isolation groove is filled with an extension of the back electrode layer.

[0039] Preferably, the first sub-isolation groove penetrates the first carrier transport layer, the wide bandgap perovskite absorption layer and the second carrier transport layer, the second sub-isolation groove penetrates the tunneling composite layer, and the third sub-isolation groove penetrates the third carrier transport layer, the narrow bandgap perovskite absorption layer and the fourth carrier transport layer.

[0040] Preferably, the first sub-isolation groove is filled with an extension of the tunneling composite layer, the second sub-isolation groove is filled with an extension of the third carrier transport layer, an extension of the narrow bandgap perovskite absorption layer and an extension of the fourth carrier transport layer, and the third sub-isolation groove is filled with an extension of the back electrode layer.

[0041] Preferably, the first sub-isolation groove passes through the first carrier transport layer, the wide bandgap perovskite absorption layer and the second carrier transport layer, the second sub-isolation groove passes through the tunneling composite layer and the third carrier transport layer, and the third sub-isolation groove passes through the narrow bandgap perovskite absorption layer and the fourth carrier transport layer.

[0042] Preferably, the first sub-isolation groove is filled with an extension of the tunneling composite layer and an extension of the third carrier transport layer, the second sub-isolation groove is filled with an extension of the narrow-bandgap perovskite absorption layer and an extension of the fourth carrier transport layer, and the third sub-isolation groove is filled with an extension of the back electrode layer.

[0043] In a second aspect, the present invention provides a method for preparing a two-terminal stacked solar cell assembly as described in the first aspect, the preparation method comprising the following steps:

[0044] A transparent bottom electrode layer, a first carrier transport layer, a wide bandgap perovskite absorption layer, a second carrier transport layer, a tunneling recombination layer, a third carrier transport layer, a narrow bandgap perovskite absorption layer, a fourth carrier transport layer and a back electrode layer are sequentially stacked on a substrate to obtain the two-end stacked solar cell module.

[0045] Among them, before the first carrier transport layer is formed, P1 scribing is performed first to cut the transparent bottom electrode layer; before the second carrier transport layer is formed, P2-1 scribing is performed first to cut the first carrier transport layer and the wide bandgap perovskite absorption layer; or, before the tunneling composite layer is formed, P2-1 scribing is performed first to cut the first carrier transport layer, the wide bandgap perovskite absorption layer and the second carrier transport layer; before the narrow bandgap perovskite absorption layer is formed or before the third carrier transport layer is formed, P2-2 scribing is performed first to at least cut the tunneling composite layer; before the back electrode layer is formed, P2-3 scribing is performed first to at least cut the narrow bandgap perovskite absorption layer and the fourth carrier transport layer; after the back electrode layer is formed, P3 scribing is performed until the tunneling composite layer is cut.

[0046] The preparation method provided by the invention has simple process and excellent effect, and the obtained two-terminal laminated solar cell assembly has excellent photoelectric performance.

[0047] Preferably, the P2-1 scribe line cuts through the first carrier transport layer and the wide bandgap perovskite absorption layer, the P2-2 scribe line cuts through the second carrier transport layer, the tunneling composite layer and the third carrier transport layer, and the P2-3 scribe line cuts through the narrow bandgap perovskite absorption layer and the fourth carrier transport layer; or, the P2-1 scribe line cuts through the first carrier transport layer and the wide bandgap perovskite absorption layer, the P2-2 scribe line cuts through the second carrier transport layer and the tunneling composite layer, and the P2-3 scribe line cuts through the third carrier transport layer, the narrow bandgap perovskite absorption layer and the fourth carrier transport layer ; or, the P2-1 scribe line cuts through the first carrier transport layer, the wide bandgap perovskite absorption layer and the second carrier transport layer, the P2-2 scribe line cuts through the tunneling composite layer, and the P2-3 scribe line cuts through the third carrier transport layer, the narrow bandgap perovskite absorption layer and the fourth carrier transport layer; or, the P2-1 scribe line cuts through the first carrier transport layer, the wide bandgap perovskite absorption layer and the second carrier transport layer, the P2-2 scribe line cuts through the tunneling composite layer and the third carrier transport layer, and the P2-3 scribe line cuts through the narrow bandgap perovskite absorption layer and the fourth carrier transport layer.

[0048] Preferably, the methods of performing the P1 scribing, the P2-1 scribing, the P2-2 scribing and the P3 scribing each independently include a laser scribing method or a mechanical scribing method.

[0049] Preferably, the first carrier transport layer, the second carrier transport layer, the third carrier transport layer and the fourth carrier transport layer are each independently formed by any one of magnetron sputtering, thermal evaporation, solution method or atomic layer deposition.

[0050] Preferably, the wide bandgap perovskite absorption layer and the narrow bandgap perovskite absorption layer are formed by spin coating or blade coating, respectively and independently.

[0051] Preferably, the method for forming the tunneling composite layer includes thermal evaporation or reactive plasma deposition.

[0052] Preferably, the back electrode is formed by a thermal evaporation method.

[0053] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0054] Compared with the prior art, the present invention has the following beneficial effects:

[0055] In the two-terminal stacked solar cell assembly provided by the present invention, the tunneling composite layer and the back electrode layer will not be in direct contact, thereby avoiding short circuit leakage. At the same time, a tunneling composite layer material with a continuous structure, better conductivity and better light transmittance can be used, and the material selection is wide. Moreover, the back electrode layer in the third sub-isolation groove is separated from the bottom battery structure, thereby avoiding the phenomenon of component performance degradation or even failure due to metal diffusion. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 This is a schematic diagram of the structure of a two-terminal stacked solar cell assembly provided in Example 1 of the present invention.

[0057] Figure 2 This is a schematic structural diagram of a two-terminal stacked solar cell assembly provided in Example 3 of the present invention.

[0058] Figure 3 This is a schematic structural diagram of a two-terminal stacked solar cell assembly provided in Example 4 of the present invention.

[0059] Figure 4 This is a schematic diagram of the structure of a two-terminal stacked solar cell assembly provided in Example 5 of the present invention.

[0060] Figure 5 This is a comparison diagram of the JV curves of the two-terminal stacked solar cell modules provided in Example 1, Example 2 and Comparative Example 1 of the present invention.

[0061] Among them, 1-substrate; 2-transparent bottom electrode layer; 3-first hole transport layer; 4-wide bandgap perovskite absorption layer; 5-first electron transport layer; 6-tunneling composite layer; 7-second hole transport layer; 8-narrow bandgap perovskite absorption layer; 9-second electron transport layer; 10-back electrode layer. DETAILED DESCRIPTION

[0062] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0063] Example 1

[0064] This embodiment provides a two-terminal stacked solar cell assembly, such as Figure 1 As shown, the two-terminal stacked solar cell assembly includes a 65.2 cm 2 A substrate 1 is provided on which at least two sub-battery units are arranged, and the sub-battery units include a transparent bottom electrode layer 2, a first hole transport layer 3, a wide bandgap perovskite absorption layer 4, a first electron transport layer 5, a tunneling composite layer 6, a second hole transport layer 7, a narrow bandgap perovskite absorption layer 8, a second electron transport layer 9 and a back electrode layer 10 which are sequentially stacked on the substrate 1.

[0065] Specifically, the transparent bottom electrode layer 2 is an ITO layer; the first hole transport layer 3 is a nickel oxide layer with a thickness of 30 nm; the chemical formula of the wide bandgap perovskite absorption layer 4 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 , with a thickness of 400nm; the first electron transport layer 5 includes a C with a thickness of 26nm along the direction away from the substrate 1 60 layer and a thickness of 60nm SnO 2 The material of the tunneling composite layer 6 is gold with a thickness of 1 nm; the second hole transport layer 7 is a PEDOT:PSS layer with a thickness of 25 nm; the chemical formula of the narrow bandgap perovskite absorption layer 8 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 , with a thickness of 1100nm; the second electron transport layer 9 includes a C with a thickness of 26nm along the direction away from the substrate 1 60 layer and a thickness of 60nm SnO 2 back electrode layer 10 is a copper layer having a thickness of 200nm.

[0066] Specifically, the sub-battery unit contains a first isolation groove, a second isolation groove and a third isolation groove arranged in parallel, the second isolation groove and the third isolation groove are located on the same side of the first isolation groove, and the second isolation groove and the third isolation groove are successively away from the first isolation groove; the first isolation groove is distributed on the transparent bottom electrode layer 2 at intervals and penetrates the transparent bottom electrode layer 2; the second isolation groove includes a first sub-isolation groove, a second sub-isolation groove and a third sub-isolation groove which are nested and stacked in sequence, and the groove widths of the first sub-isolation groove, the second sub-isolation groove and the third sub-isolation groove decrease in sequence, the width of the first sub-isolation groove is 90µm, and the width of the second sub-isolation groove is 90µm. The width of the third sub-isolation groove is 60µm, and the width of the third sub-isolation groove is 30µm; the first sub-isolation groove penetrates the first hole transport layer 3 and the wide band gap perovskite absorption layer 4, and exposes the transparent bottom electrode layer 2; the second sub-isolation groove penetrates the first electron transport layer 5, the tunneling composite layer 6 and the second hole transport layer 7, and exposes the transparent bottom electrode layer 2; the third sub-isolation groove penetrates the narrow band gap perovskite absorption layer 8 and the second electron transport layer 9, and exposes the transparent bottom electrode layer 2; the third isolation groove penetrates the tunneling composite layer 6, the second hole transport layer 7, the narrow band gap perovskite absorption layer 8, the second electron transport layer 9 and the back electrode layer 10.

[0067] Specifically, the first sub-isolation groove is filled with an extension of the first electron transport layer 5, an extension of the tunneling composite layer 6 and an extension of the second hole transport layer 7, the second sub-isolation groove is filled with an extension of the narrow bandgap perovskite absorption layer 8 and an extension of the second electron transport layer 9, and the third sub-isolation groove is filled with an extension of the back electrode layer 10.

[0068] This embodiment also provides a method for preparing the above-mentioned two-terminal stacked solar cell assembly, the preparation method comprising the following steps:

[0069] (1) Use laser scribing to scribe the ITO conductive glass with P1 line, cut the ITO layer, and then scrub it with deionized water, and ultrasonicate it with deionized water, acetone, and isopropanol for 30 minutes each, and then purge it with a nitrogen air gun, and then perform ultraviolet ozone treatment for 15 minutes.

[0070] (2) Using magnetron sputtering, a nickel oxide layer is deposited on the ITO conductive glass.

[0071] A wide bandgap perovskite layer precursor solution with a concentration of 1 mol / L is scraped onto the nickel oxide layer to form a wide bandgap perovskite layer; wherein the preparation method of the wide bandgap perovskite layer precursor solution comprises: weighing CsI, FAI, PbI in a nitrogen glove box according to a molar ratio, 2 and PbBr 2 , and then dissolved in a mixed solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) with a volume ratio of 4:1 to obtain a wide bandgap perovskite layer precursor solution.

[0072] (3) Using laser scribing, P2-1 is scribed on one side of P1 to cut through the nickel oxide layer and the wide bandgap perovskite absorption layer, exposing the ITO layer.

[0073] (4) Using thermal evaporation, a 26 nm thick C layer is deposited on the wide bandgap perovskite absorber layer. 60 layer; using atomic layer deposition, in C 60 A 60nm thick SnO layer is deposited on the 2 layer.

[0074] Using thermal evaporation method, SnO 2 A layer of gold with a thickness of 1 nm is deposited on the layer as a tunneling composite layer.

[0075] A PEDOT:PSS layer is deposited on the tunneling composite layer by spin coating.

[0076] (5) Using laser scribing, scribe P2-2 in the first sub-isolation trench formed by P2-1 to scribe C 60 layer, SnO 2 layer, tunneling composite layer and PEDOT:PSS layer to expose the ITO layer.

[0077] (6) applying a narrow bandgap perovskite layer precursor solution with a concentration of 2 mol / L on the PEDOT:PSS layer to form a narrow bandgap perovskite layer; wherein the preparation method of the narrow bandgap perovskite layer precursor solution comprises: weighing MAI, FAI, PbI in a nitrogen glove box according to a molar ratio; 2 and SnI 2 , and then dissolved in a mixed solvent of DMF and DMSO with a volume ratio of 9:1 to obtain a narrow bandgap perovskite layer precursor solution.

[0078] A 26nm thick C layer was formed on the narrow bandgap perovskite layer using thermal evaporation. 60 layer; using atomic layer deposition, in C 60 A 10 nm thick SnO layer is deposited on the 2 layer.

[0079] (7) Using laser scribing, P2-3 is scribed in the second sub-isolation groove formed by P2-2, and the narrow bandgap perovskite layer and C 60 Layer and SnO 2 layer, exposing the ITO layer.

[0080] (8) Using thermal evaporation method, SnO 2 A copper layer is formed on the layer as a back electrode layer.

[0081] (9) Using laser scribing, scribe the P3 line on the side of the P2-3 line away from the P1 line until the tunnel composite layer is cut through.

[0082] (10) Packaging is performed in a nitrogen glove box to obtain the two-terminal stacked solar cell module.

[0083] Example 2

[0084] This embodiment provides a two-terminal stacked solar cell assembly, which includes a 65.2 cm 2 A substrate is provided on which at least two sub-battery units are arranged, and the sub-battery units include a transparent bottom electrode layer, a first hole transport layer, a wide bandgap perovskite absorption layer, a first electron transport layer, a tunneling composite layer, a second hole transport layer, a narrow bandgap perovskite absorption layer, a second electron transport layer and a back electrode layer stacked in sequence on the substrate.

[0085] Specifically, the transparent bottom electrode layer is an ITO layer; the first hole transport layer is a nickel oxide layer with a thickness of 30nm; the chemical formula of the wide bandgap perovskite absorption layer is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 , with a thickness of 400nm; the first electron transport layer includes a C with a thickness of 26nm along the direction away from the substrate 60 layer and a thickness of 60nm SnO 2 layer; the material of the tunneling composite layer is indium tungsten oxide with a thickness of 5nm; the second hole transport layer is a PEDOT:PSS layer with a thickness of 25nm; the chemical formula of the narrow bandgap perovskite absorption layer is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 , with a thickness of 1100nm; the second electron transport layer includes a C with a thickness of 26nm along the direction away from the substrate 60 layer and a thickness of 10 nm SnO 2 layer; the back electrode layer is a copper layer with a thickness of 200nm.

[0086] Specifically, the sub-battery unit contains a first isolation groove, a second isolation groove and a third isolation groove arranged in parallel, the second isolation groove and the third isolation groove are located on the same side of the first isolation groove, and the second isolation groove and the third isolation groove are successively away from the first isolation groove; the first isolation groove is distributed on the transparent bottom electrode layer at intervals and penetrates the transparent bottom electrode layer; the second isolation groove includes a first sub-isolation groove, a second sub-isolation groove and a third sub-isolation groove which are nested and stacked in sequence, and the groove widths of the first sub-isolation groove, the second sub-isolation groove and the third sub-isolation groove decrease in sequence, the width of the first sub-isolation groove is 80µm, and the width of the second sub-isolation groove is 80µm. The width of the second sub-isolation groove is 40µm, and the width of the third sub-isolation groove is 20µm; the first sub-isolation groove penetrates the first hole transport layer and the wide bandgap perovskite absorption layer, and exposes the transparent bottom electrode layer; the second sub-isolation groove penetrates the first electron transport layer, the tunneling composite layer and the second hole transport layer, and exposes the transparent bottom electrode layer; the third sub-isolation groove penetrates the narrow bandgap perovskite absorption layer and the second electron transport layer, and exposes the transparent bottom electrode layer; the third isolation groove penetrates the tunneling composite layer, the second hole transport layer, the narrow bandgap perovskite absorption layer, the second electron transport layer and the back electrode layer.

[0087] Specifically, the first sub-isolation groove is filled with an extension of the first electron transport layer, an extension of the tunneling composite layer, and an extension of the second hole transport layer, the second sub-isolation groove is filled with an extension of the narrow bandgap perovskite absorption layer and an extension of the second electron transport layer, and the third sub-isolation groove is filled with an extension of the back electrode layer.

[0088] This embodiment also provides a method for preparing the above-mentioned two-terminal stacked solar cell assembly, the preparation method comprising the following steps:

[0089] (1) Use laser scribing to scribe the ITO conductive glass with P1 line, cut the ITO layer, and then scrub it with deionized water, and ultrasonicate it with deionized water, acetone, and isopropanol for 30 minutes each, and then purge it with a nitrogen air gun, and then perform ultraviolet ozone treatment for 15 minutes.

[0090] (2) Using magnetron sputtering, a nickel oxide layer is deposited on the ITO conductive glass.

[0091] A wide bandgap perovskite layer precursor solution with a concentration of 1 mol / L is scraped onto the nickel oxide layer to form a wide bandgap perovskite layer; wherein the preparation method of the wide bandgap perovskite layer precursor solution comprises: weighing CsI, FAI, PbI in a nitrogen glove box according to a molar ratio, 2 and PbBr 2 , and then dissolved in a mixed solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) with a volume ratio of 4:1 to obtain a wide bandgap perovskite layer precursor solution.

[0092] (3) Using laser scribing, P2-1 is scribed on one side of P1 to cut through the nickel oxide layer and the wide bandgap perovskite absorption layer, exposing the ITO layer.

[0093] (4) Using thermal evaporation, a 26 nm thick C layer is deposited on the wide bandgap perovskite absorber layer. 60 layer; using atomic layer deposition, in C 60 A 60nm thick SnO layer is deposited on the 2 layer.

[0094] Using thermal evaporation method, SnO 2 A layer of indium tungsten oxide with a thickness of 5 nm is deposited on the layer as a tunneling composite layer.

[0095] A PEDOT:PSS layer is deposited on the tunneling composite layer by spin coating.

[0096] (5) Using laser scribing, scribe P2-2 in the first sub-isolation trench formed by P2-1 to scribe C 60 layer, SnO 2 layer, tunneling composite layer and PEDOT:PSS layer to expose the ITO layer.

[0097] (6) applying a narrow bandgap perovskite layer precursor solution with a concentration of 2 mol / L on the PEDOT:PSS layer to form a narrow bandgap perovskite layer; wherein the preparation method of the narrow bandgap perovskite layer precursor solution comprises: weighing MAI, FAI, PbI in a nitrogen glove box according to a molar ratio; 2 and SnI 2 , and then dissolved in a mixed solvent of DMF and DMSO with a volume ratio of 9:1 to obtain a narrow bandgap perovskite layer precursor solution.

[0098] A 26nm thick C layer was formed on the narrow bandgap perovskite layer using thermal evaporation. 60 layer; using atomic layer deposition, in C 60 A 10 nm thick SnO layer is deposited on the 2 layer.

[0099] (7) Using laser scribing, P2-3 is scribed in the second sub-isolation groove formed by P2-2, and the narrow bandgap perovskite layer and C 60 Layer and SnO 2 layer, exposing the ITO layer.

[0100] (8) Using thermal evaporation method, SnO 2 A copper layer is formed on the layer as a back electrode layer.

[0101] (9) Using laser scribing, scribe the P3 line on the side of the P2-3 line away from the P1 line until the tunnel composite layer is cut through.

[0102] (10) Packaging is performed in a nitrogen glove box to obtain the two-terminal stacked solar cell module.

[0103] Example 3

[0104] This embodiment provides a two-terminal stacked solar cell assembly, such as Figure 2 As shown, the two-terminal stacked solar cell assembly includes a 65.2 cm 2 A substrate 1 is provided on which at least two sub-battery units are arranged, and the sub-battery units include a transparent bottom electrode layer 2, a first hole transport layer 3, a wide bandgap perovskite absorption layer 4, a first electron transport layer 5, a tunneling composite layer 6, a second hole transport layer 7, a narrow bandgap perovskite absorption layer 8, a second electron transport layer 9 and a back electrode layer 10 which are sequentially stacked on the substrate 1.

[0105] Specifically, the transparent bottom electrode layer 2 is an ITO layer; the first hole transport layer 3 is a nickel oxide layer with a thickness of 30 nm; the chemical formula of the wide bandgap perovskite absorption layer 4 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 , with a thickness of 400nm; the first electron transport layer 5 includes a C with a thickness of 26nm along the direction away from the substrate 1 60 layer and a thickness of 60nm SnO 2 The material of the tunneling composite layer 6 is gold with a thickness of 1 nm; the second hole transport layer 7 is a PEDOT:PSS layer with a thickness of 25 nm; the chemical formula of the narrow bandgap perovskite absorption layer 8 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 , with a thickness of 1100nm; the second electron transport layer 9 includes a C with a thickness of 26nm along the direction away from the substrate 1 60 layer and a thickness of 60nm SnO 2 back electrode layer 10 is a copper layer having a thickness of 200nm.

[0106] Specifically, the sub-battery unit contains a first isolation groove, a second isolation groove and a third isolation groove arranged in parallel, the second isolation groove and the third isolation groove are located on the same side of the first isolation groove, and the second isolation groove and the third isolation groove are successively away from the first isolation groove; the first isolation groove is distributed on the transparent bottom electrode layer 2 at intervals and penetrates the transparent bottom electrode layer 2; the second isolation groove includes a first sub-isolation groove, a second sub-isolation groove and a third sub-isolation groove which are nested and stacked in sequence, and the groove widths of the first sub-isolation groove, the second sub-isolation groove and the third sub-isolation groove decrease in sequence, the width of the first sub-isolation groove is 100µm, and the width of the second sub-isolation groove is 100µm. The width of the third sub-isolation groove is 70µm, and the width of the third sub-isolation groove is 40µm; the first sub-isolation groove penetrates the first hole transport layer 3 and the wide band gap perovskite absorption layer 4, and exposes the transparent bottom electrode layer 2; the second sub-isolation groove penetrates the first electron transport layer 5 and the tunneling composite layer 6, and exposes the transparent bottom electrode layer 2; the third sub-isolation groove penetrates the second hole transport layer 7, the narrow band gap perovskite absorption layer 8 and the second electron transport layer 9, and exposes the transparent bottom electrode layer 2; the third isolation groove penetrates the tunneling composite layer 6, the second hole transport layer 7, the narrow band gap perovskite absorption layer 8, the second electron transport layer 9 and the back electrode layer 10.

[0107] Specifically, the first sub-isolation groove is filled with an extension of the first electron transport layer 5 and an extension of the tunneling composite layer 6, the second sub-isolation groove is filled with an extension of the second hole transport layer 7, an extension of the narrow bandgap perovskite absorption layer 8 and an extension of the second electron transport layer 9, and the third sub-isolation groove is filled with an extension of the back electrode layer 10.

[0108] This embodiment also provides a method for preparing the above-mentioned two-terminal stacked solar cell assembly, the preparation method comprising the following steps:

[0109] (1) Use laser scribing to scribe the ITO conductive glass with P1 line, cut the ITO layer, and then scrub it with deionized water, and ultrasonicate it with deionized water, acetone, and isopropanol for 30 minutes each, and then purge it with a nitrogen air gun, and then perform ultraviolet ozone treatment for 15 minutes.

[0110] (2) Using magnetron sputtering, a nickel oxide layer is deposited on the ITO conductive glass.

[0111] A wide bandgap perovskite layer precursor solution with a concentration of 1 mol / L is scraped onto the nickel oxide layer to form a wide bandgap perovskite layer; wherein the preparation method of the wide bandgap perovskite layer precursor solution comprises: weighing CsI, FAI, PbI in a nitrogen glove box according to a molar ratio, 2 and PbBr 2 , and then dissolved in a mixed solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) with a volume ratio of 4:1 to obtain a wide bandgap perovskite layer precursor solution.

[0112] (3) Using laser scribing, P2-1 is scribed on one side of P1 to cut through the nickel oxide layer and the wide bandgap perovskite absorption layer, exposing the ITO layer.

[0113] (4) Using thermal evaporation, a 26 nm thick C layer is deposited on the wide bandgap perovskite absorber layer. 60 layer; using atomic layer deposition, in C 60 A 60nm thick SnO layer is deposited on the 2 layer.

[0114] Using thermal evaporation method, SnO 2 A layer of gold with a thickness of 1 nm is deposited on the layer as a tunneling composite layer.

[0115] (5) Using laser scribing, scribe P2-2 in the first sub-isolation trench formed by P2-1 to scribe C 60 layer, SnO 2 layer and tunneling composite layer to expose the ITO layer.

[0116] (6) Using the spin coating method, a PEDOT:PSS layer is deposited on the tunneling composite layer.

[0117] A narrow bandgap perovskite layer precursor solution with a concentration of 2 mol / L is scraped onto the PEDOT:PSS layer to form a narrow bandgap perovskite layer; wherein the narrow bandgap perovskite layer precursor solution is prepared by weighing MAI, FAI, PbI in a nitrogen glove box according to a molar ratio. 2 and SnI 2 , and then dissolved in a mixed solvent of DMF and DMSO with a volume ratio of 9:1 to obtain a narrow bandgap perovskite layer precursor solution.

[0118] A 26nm thick C layer was formed on the narrow bandgap perovskite layer using thermal evaporation. 60 layer; using atomic layer deposition, in C 60 A 60nm thick SnO layer is deposited on the 2 layer.

[0119] (7) Using laser scribing, P2-3 is scribed in the second sub-isolation groove formed by P2-2, and the PEDOT:PSS layer, the narrow bandgap perovskite layer, and the C 60 Layer and SnO 2 layer, exposing the ITO layer.

[0120] (8) Using thermal evaporation method, SnO 2 A copper layer is formed on the layer as a back electrode layer.

[0121] (9) Using laser scribing, scribe the P3 line on the side of the P2-3 line away from the P1 line until the tunnel composite layer is cut through.

[0122] (10) Packaging is performed in a nitrogen glove box to obtain the two-terminal stacked solar cell module.

[0123] Example 4

[0124] This embodiment provides a two-terminal stacked solar cell assembly, such as Figure 3 As shown, the two-terminal stacked solar cell assembly includes a 65.2 cm 2 A substrate 1 is provided on which at least two sub-battery units are arranged, and the sub-battery units include a transparent bottom electrode layer 2, a first hole transport layer 3, a wide bandgap perovskite absorption layer 4, a first electron transport layer 5, a tunneling composite layer 6, a second hole transport layer 7, a narrow bandgap perovskite absorption layer 8, a second electron transport layer 9 and a back electrode layer 10 which are sequentially stacked on the substrate 1.

[0125] Specifically, the transparent bottom electrode layer 2 is an ITO layer; the first hole transport layer 3 is a nickel oxide layer with a thickness of 30 nm; the chemical formula of the wide bandgap perovskite absorption layer 4 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 , with a thickness of 400nm; the first electron transport layer 5 includes a C with a thickness of 26nm along the direction away from the substrate 1 60 layer and a thickness of 60nm SnO 2 The material of the tunneling composite layer 6 is gold with a thickness of 1 nm; the second hole transport layer 7 is a PEDOT:PSS layer with a thickness of 25 nm; the chemical formula of the narrow bandgap perovskite absorption layer 8 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 , with a thickness of 1100nm; the second electron transport layer 9 includes a C with a thickness of 26nm along the direction away from the substrate 1 60 layer and a thickness of 60nm SnO 2 back electrode layer 10 is a copper layer having a thickness of 200nm.

[0126] Specifically, the sub-battery unit contains a first isolation groove, a second isolation groove and a third isolation groove arranged in parallel, the second isolation groove and the third isolation groove are located on the same side of the first isolation groove, and the second isolation groove and the third isolation groove are successively away from the first isolation groove; the first isolation groove is distributed on the transparent bottom electrode layer 2 at intervals and penetrates the transparent bottom electrode layer 2; the second isolation groove includes a first sub-isolation groove, a second sub-isolation groove and a third sub-isolation groove which are nested and stacked in sequence, and the groove widths of the first sub-isolation groove, the second sub-isolation groove and the third sub-isolation groove decrease in sequence, the width of the first sub-isolation groove is 90µm, and the width of the second sub-isolation groove is 90µm. The width of the third sub-isolation groove is 60µm, and the width of the third sub-isolation groove is 30µm; the first sub-isolation groove penetrates the first hole transport layer 3, the wide band gap perovskite absorption layer 4 and the first electron transport layer 5, and exposes the transparent bottom electrode layer 2; the second sub-isolation groove penetrates the tunneling composite layer 6, and exposes the transparent bottom electrode layer 2; the third sub-isolation groove penetrates the second hole transport layer 7, the narrow band gap perovskite absorption layer 8 and the second electron transport layer 9, and exposes the transparent bottom electrode layer 2; the third isolation groove penetrates the tunneling composite layer 6, the second hole transport layer 7, the narrow band gap perovskite absorption layer 8, the second electron transport layer 9 and the back electrode layer 10.

[0127] Specifically, the first sub-isolation groove is filled with an extension of the tunneling composite layer 6, the second sub-isolation groove is filled with an extension of the second hole transport layer 7, an extension of the narrow bandgap perovskite absorption layer 8 and an extension of the second electron transport layer 9, and the third sub-isolation groove is filled with an extension of the back electrode layer 10.

[0128] This embodiment also provides a method for preparing the above-mentioned two-terminal stacked solar cell assembly, the preparation method comprising the following steps:

[0129] (1) Use laser scribing to scribe the ITO conductive glass with P1 line, cut the ITO layer, and then scrub it with deionized water, and ultrasonicate it with deionized water, acetone, and isopropanol for 30 minutes each, and then purge it with a nitrogen air gun, and then perform ultraviolet ozone treatment for 15 minutes.

[0130] (2) Using magnetron sputtering, a nickel oxide layer is deposited on the ITO conductive glass.

[0131] A wide bandgap perovskite layer precursor solution with a concentration of 1 mol / L is scraped onto the nickel oxide layer to form a wide bandgap perovskite layer; wherein the preparation method of the wide bandgap perovskite layer precursor solution comprises: weighing CsI, FAI, PbI in a nitrogen glove box according to a molar ratio, 2 and PbBr 2 , and then dissolved in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a wide bandgap perovskite layer precursor solution.

[0132] Using thermal evaporation, a 26nm thick C layer was deposited on the wide bandgap perovskite absorber layer. 60 layer; using atomic layer deposition, in C 60 A 60nm thick SnO layer is deposited on the 2 layer.

[0133] (3) Using laser scribing, P2-1 is scribed on the side of P1 to scribe the nickel oxide layer, wide bandgap perovskite absorber layer, and C 60 Layer and SnO 2 layer, exposing the ITO layer.

[0134] (4) Using thermal evaporation method, SnO 2 A layer of gold with a thickness of 1 nm is deposited on the layer as a tunneling composite layer.

[0135] (5) Using laser scribing, P2-2 is scribed in the first sub-isolation groove formed by P2-1, so as to cut through the tunnel composite layer and expose the ITO layer.

[0136] (6) Using the spin coating method, a PEDOT:PSS layer is deposited on the tunneling composite layer.

[0137] A narrow bandgap perovskite layer precursor solution with a concentration of 2 mol / L is scraped onto the PEDOT:PSS layer to form a narrow bandgap perovskite layer; wherein the narrow bandgap perovskite layer precursor solution is prepared by weighing MAI, FAI, PbI in a nitrogen glove box according to a molar ratio. 2 and SnI 2 , and then dissolved in a mixed solvent of DMF and DMSO with a volume ratio of 9:1 to obtain a narrow bandgap perovskite layer precursor solution.

[0138] A 26nm thick C layer was formed on the narrow bandgap perovskite layer using thermal evaporation. 60 layer; using atomic layer deposition, in C 60 A 60nm thick SnO layer is deposited on the 2 layer.

[0139] (7) Using laser scribing, P2-3 is scribed in the second sub-isolation groove formed by P2-2, and the PEDOT:PSS layer, the narrow bandgap perovskite layer, and the C 60 Layer and SnO 2 layer, exposing the ITO layer.

[0140] (8) Using thermal evaporation method, SnO 2 A copper layer is formed on the layer as a back electrode layer.

[0141] (9) Using laser scribing, scribe the P3 line on the side of the P2-3 line away from the P1 line until the tunnel composite layer is cut through.

[0142] (10) Packaging is performed in a nitrogen glove box to obtain the two-terminal stacked solar cell module.

[0143] Example 5

[0144] This embodiment provides a two-terminal stacked solar cell assembly, such as Figure 4 As shown, the two-terminal stacked solar cell assembly includes a 65.2 cm 2 A substrate 1 is provided on which at least two sub-battery units are arranged, and the sub-battery units include a transparent bottom electrode layer 2, a first hole transport layer 3, a wide bandgap perovskite absorption layer 4, a first electron transport layer 5, a tunneling composite layer 6, a second hole transport layer 7, a narrow bandgap perovskite absorption layer 8, a second electron transport layer 9 and a back electrode layer 10 which are sequentially stacked on the substrate 1.

[0145] Specifically, the transparent bottom electrode layer 2 is an ITO layer; the first hole transport layer 3 is a nickel oxide layer with a thickness of 30 nm; the chemical formula of the wide bandgap perovskite absorption layer 4 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 , with a thickness of 400nm; the first electron transport layer 5 includes a C with a thickness of 26nm along the direction away from the substrate 1 60 layer and a thickness of 60nm SnO 2 The material of the tunneling composite layer 6 is gold with a thickness of 1 nm; the second hole transport layer 7 is a PEDOT:PSS layer with a thickness of 25 nm; the chemical formula of the narrow bandgap perovskite absorption layer 8 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I 3 , with a thickness of 1100nm; the second electron transport layer 9 includes a C with a thickness of 26nm along the direction away from the substrate 1 60 layer and a thickness of 60nm SnO 2 back electrode layer 10 is a copper layer having a thickness of 200nm.

[0146] Specifically, the sub-battery unit contains a first isolation groove, a second isolation groove and a third isolation groove arranged in parallel, the second isolation groove and the third isolation groove are located on the same side of the first isolation groove, and the second isolation groove and the third isolation groove are successively away from the first isolation groove; the first isolation groove is distributed on the transparent bottom electrode layer 2 at intervals and penetrates the transparent bottom electrode layer 2; the second isolation groove includes a first sub-isolation groove, a second sub-isolation groove and a third sub-isolation groove which are nested and stacked in sequence, and the groove widths of the first sub-isolation groove, the second sub-isolation groove and the third sub-isolation groove decrease in sequence, the width of the first sub-isolation groove is 90µm, and the width of the second sub-isolation groove is 90µm. The width of the third sub-isolation groove is 60µm, and the width of the third sub-isolation groove is 30µm; the first sub-isolation groove penetrates the first hole transport layer 3, the wide band gap perovskite absorption layer 4 and the first electron transport layer 5, and exposes the transparent bottom electrode layer 2; the second sub-isolation groove penetrates the tunneling composite layer 6 and the second hole transport layer 7, and exposes the transparent bottom electrode layer 2; the third sub-isolation groove penetrates the narrow band gap perovskite absorption layer 8 and the second electron transport layer 9, and exposes the transparent bottom electrode layer 2; the third isolation groove penetrates the tunneling composite layer 6, the second hole transport layer 7, the narrow band gap perovskite absorption layer 8, the second electron transport layer 9 and the back electrode layer 10.

[0147] Specifically, the first sub-isolation groove is filled with an extension of the tunneling composite layer 6 and an extension of the second hole transport layer 7, the second sub-isolation groove is filled with an extension of the narrow bandgap perovskite absorption layer 8 and an extension of the second electron transport layer 9, and the third sub-isolation groove is filled with an extension of the back electrode layer 10.

[0148] This embodiment also provides a method for preparing the above-mentioned two-terminal stacked solar cell assembly, the preparation method comprising the following steps:

[0149] (1) Use laser scribing to scribe the ITO conductive glass with P1 line, cut the ITO layer, and then scrub it with deionized water, and ultrasonicate it with deionized water, acetone, and isopropanol for 30 minutes each, and then purge it with a nitrogen air gun, and then perform ultraviolet ozone treatment for 15 minutes.

[0150] (2) Using magnetron sputtering, a nickel oxide layer is deposited on the ITO conductive glass.

[0151] A wide bandgap perovskite layer precursor solution with a concentration of 1 mol / L is scraped onto the nickel oxide layer to form a wide bandgap perovskite layer; wherein the preparation method of the wide bandgap perovskite layer precursor solution comprises: weighing CsI, FAI, PbI in a nitrogen glove box according to a molar ratio, 2 and PbBr 2 , and then dissolved in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a wide bandgap perovskite layer precursor solution.

[0152] Using thermal evaporation, a 26nm thick C layer was deposited on the wide bandgap perovskite absorber layer. 60 layer; using atomic layer deposition, in C 60 A 60nm thick SnO layer is deposited on the 2 layer.

[0153] (3) Using laser scribing, P2-1 is scribed on the side of P1 to scribe the nickel oxide layer, wide bandgap perovskite absorber layer, and C 60 Layer and SnO 2 layer, exposing the ITO layer.

[0154] (4) Using thermal evaporation method, SnO 2 A layer of gold with a thickness of 1 nm is deposited on the layer as a tunneling composite layer.

[0155] A PEDOT:PSS layer is deposited on the tunneling composite layer by spin coating.

[0156] (5) Using laser scribing, P2-2 is scribed in the first sub-isolation groove formed by P2-1, and the tunneling composite layer and the PEDOT:PSS layer are cut off to expose the ITO layer.

[0157] (6) applying a narrow bandgap perovskite layer precursor solution with a concentration of 2 mol / L on the PEDOT:PSS layer to form a narrow bandgap perovskite layer; wherein the preparation method of the narrow bandgap perovskite layer precursor solution comprises: weighing MAI, FAI, PbI in a nitrogen glove box according to a molar ratio; 2 and SnI 2 , and then dissolved in a mixed solvent of DMF and DMSO with a volume ratio of 9:1 to obtain a narrow bandgap perovskite layer precursor solution.

[0158] A 26nm thick C layer was formed on the narrow bandgap perovskite layer using thermal evaporation. 60 layer; using atomic layer deposition, in C 60 A 60nm thick SnO layer is deposited on the 2 layer.

[0159] (7) Using laser scribing, P2-3 is scribed in the second sub-isolation groove formed by P2-2, and the narrow bandgap perovskite layer and C 60 Layer and SnO 2 layer, exposing the ITO layer.

[0160] (8) Using thermal evaporation method, SnO 2 A copper layer is formed on the layer as a back electrode layer.

[0161] (9) Using laser scribing, scribe the P3 line on the side of the P2-3 line away from the P1 line until the tunnel composite layer is cut through.

[0162] (10) Packaging is performed in a nitrogen glove box to obtain the two-terminal stacked solar cell module.

[0163] Comparative Example 1

[0164] This comparative example provides a method for preparing a two-terminal stacked solar cell assembly, the preparation method comprising the following steps:

[0165] (1) Use laser scribing to scribe the ITO conductive glass with P1 line, cut the ITO layer, and then scrub it with deionized water, and ultrasonicate it with deionized water, acetone, and isopropanol for 30 minutes each, and then purge it with a nitrogen air gun, and then perform ultraviolet ozone treatment for 15 minutes.

[0166] (2) Using magnetron sputtering, a nickel oxide layer is deposited on the ITO conductive glass.

[0167] A wide bandgap perovskite layer precursor solution with a concentration of 1 mol / L is scraped onto the nickel oxide layer to form a wide bandgap perovskite layer with a thickness of 400 nm; wherein the preparation method of the wide bandgap perovskite layer precursor solution comprises: weighing CsI, FAI, PbI in a nitrogen glove box according to a molar ratio, 2 and PbBr 2 , and then dissolved in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a wide bandgap perovskite layer precursor solution.

[0168] Using thermal evaporation, a 26nm thick C layer was deposited on the wide bandgap perovskite absorber layer. 60 layer; using atomic layer deposition, in C 60 A 60nm thick SnO layer is deposited on the 2 layer.

[0169] Using thermal evaporation method, SnO 2 A layer of gold with a thickness of 1 nm is deposited on the layer as a tunneling composite layer.

[0170] A PEDOT:PSS layer is deposited on the tunneling composite layer by spin coating.

[0171] A narrow bandgap perovskite layer precursor solution with a concentration of 2 mol / L is scraped onto the PEDOT:PSS layer to form a narrow bandgap perovskite layer with a thickness of 1100 nm; wherein the preparation method of the narrow bandgap perovskite layer precursor solution comprises: weighing MAI, FAI, PbI in a nitrogen glove box according to a molar ratio, 2 and SnI 2, and then dissolved in a mixed solvent of DMF and DMSO with a volume ratio of 9:1 to obtain a narrow bandgap perovskite layer precursor solution.

[0172] A 26nm thick C layer was formed on the narrow bandgap perovskite layer using thermal evaporation. 60 layer; using atomic layer deposition, in C 60 A 10 nm thick SnO layer is deposited on the 2 layer.

[0173] (3) Using laser scribing, scribe line P2 on the side of line P1 until the nickel oxide layer is cut through and the ITO layer is exposed.

[0174] (4) Using thermal evaporation method to treat SnO in step (3) 2 A copper layer with a thickness of 200 nm is formed on the P2 layer as a back electrode layer and extends to the isolation groove formed by the P2 scribe line.

[0175] (5) Using laser scribing, scribe line P3 on the side of line P2 away from line P1 until the tunnel composite layer is severed.

[0176] (10) Packaging is performed in a nitrogen glove box to obtain the two-terminal stacked solar cell module.

[0177] Figure 5 A comparison diagram of the JV curves of the two-terminal stacked solar cell modules provided in Example 1, Example 2 and this comparative example is shown. By comparison, it can be seen that the two-terminal stacked solar cell module provided in Example 2 has higher performance, and the current, voltage, fill factor and photoelectric conversion efficiency are all improved to varying degrees.

[0178] Comparative Example 2

[0179] The difference between this comparative example and Example 1 is that the widths of the first sub-isolation trench and the second sub-isolation trench are equal, and the width of the third sub-isolation trench is smaller than that of the first sub-isolation trench or the second sub-isolation trench.

[0180] The rest of the structure, preparation method and parameters remain the same as those in Example 1.

[0181] Performance Testing

[0182] The photoelectric performance of the two-terminal stacked solar cell modules provided in the above embodiments and comparative examples was tested under the following conditions: the starting scanning voltage of the performance curve was 30V, and the scanning rate was 300mV·s -1 (voltage step size is 10mV, delay time is 100ms).

[0183] The test results are shown in Table 1.

[0184] Table 1

[0185]

[0186] analyze:

[0187] In the two-terminal stacked solar cell assembly provided by the present invention, the tunneling composite layer and the back electrode layer will not be in direct contact, thereby avoiding short circuit leakage. At the same time, a tunneling composite layer material with a continuous structure, better conductivity and better light transmittance can be used, and the material selection is wide. Moreover, the back electrode layer in the third sub-isolation groove is separated from the bottom battery structure, thereby avoiding the phenomenon of component performance degradation or even failure due to metal diffusion.

[0188] By comparing Example 1 with Comparative Example 1, it can be seen that the conventional P1 scribing, P2 scribing and P3 scribing schemes cannot avoid the contact between the tunneling composite layer and the back electrode layer, and short circuit leakage is prone to occur, resulting in reduced component performance.

[0189] By comparing Example 1 with Comparative Example 2, it can be seen that if the widths of the first sub-isolation trench and the second sub-isolation trench are equal, and the width of the third sub-isolation trench is smaller than that of the first sub-isolation trench or the second sub-isolation trench, since there is no dense SnO in the isolation trench area, 2 When depositing narrow-bandgap perovskite films, the solvent will dissolve the bottom wide-bandgap perovskite, resulting in abnormal performance.

[0190] The applicant declares that the present invention illustrates the process method of the present invention through the above-mentioned embodiments, but the present invention is not limited to the above-mentioned process steps, that is, it does not mean that the present invention must rely on the above-mentioned process steps to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of the raw materials selected by the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. A two-terminal stacked solar cell module, characterized in that: The two-terminal stacked solar cell assembly comprises a substrate, on which at least two sub-battery units are arranged, and the sub-battery units comprise a transparent bottom electrode layer, a first carrier transport layer, a wide bandgap perovskite absorption layer, a second carrier transport layer, a tunneling recombination layer, a third carrier transport layer, a narrow bandgap perovskite absorption layer, a fourth carrier transport layer and a back electrode layer which are sequentially stacked on the substrate; The sub-battery unit contains a first isolation groove, a second isolation groove and a third isolation groove arranged in parallel; the first isolation groove is distributed on the transparent bottom electrode layer at intervals and penetrates the transparent bottom electrode layer; the second isolation groove includes a first sub-isolation groove, a second sub-isolation groove and a third sub-isolation groove which are nested and stacked in sequence, and the groove widths of the first sub-isolation groove, the second sub-isolation groove and the third sub-isolation groove decrease in sequence; the first sub-isolation groove at least penetrates the first carrier transport layer and the wide bandgap perovskite absorption layer, and exposes the transparent bottom electrode layer; the second sub-isolation groove at least penetrates the tunneling composite layer, and exposes the transparent bottom electrode layer; the third sub-isolation groove at least penetrates the narrow bandgap perovskite absorption layer and the fourth carrier transport layer, and exposes the transparent bottom electrode layer; the third isolation groove penetrates the tunneling composite layer, the third carrier transport layer, the narrow bandgap perovskite absorption layer, the fourth carrier transport layer and the back electrode layer; The first isolation groove is filled with an extension of the first carrier transport layer, the first sub-isolation groove is at least filled with an extension of the tunneling composite layer, the second sub-isolation groove is at least filled with an extension of the narrow-bandgap perovskite absorption layer and an extension of the fourth carrier transport layer, and the third sub-isolation groove is filled with an extension of the back electrode layer.

2. The two-terminal stacked solar cell assembly according to claim 1, characterized in that: The first carrier transport layer and the second carrier transport layer transport carriers with opposite electrical properties, and the third carrier transport layer and the fourth carrier transport layer transport carriers with opposite electrical properties; And / or, the first carrier transport layer and the third carrier transport layer are both hole transport layers, and the second carrier transport layer and the fourth carrier transport layer are both electron transport layers; And / or, the material of the hole transport layer includes any one of copper phthalocyanine, cobalt phthalocyanine, nickel phthalocyanine, nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, cupric oxide, cuprous oxide, cobalt oxide, PTAA, PEDOT:PSS, Poly-TPD or Spiro-MeOTAD, or a combination of at least two thereof; And / or, the material of the electron transport layer includes C 60 , fullerene derivatives, tin oxide, titanium oxide, zinc oxide, cadmium sulfide, indium trioxide or tungsten oxide, any one or a combination of at least two thereof; And / or, the material of the tunneling composite layer includes a metal material or a transparent conductive oxide; And / or, the thickness of the tunneling composite layer is 1-3 nm; And / or, the material of the back electrode layer is a metal material.

3. The two-terminal stacked solar cell assembly according to claim 1, characterized in that: The second isolation trench and the third isolation trench are located on the same side of the first isolation trench, and the second isolation trench and the third isolation trench are successively away from the first isolation trench; And / or, the first isolation groove, the second isolation groove and the third isolation groove are not connected to each other; and / or, the width of the first sub-isolation groove is 80-100 µm; and / or, the width of the second sub-isolation groove is 40-70 µm; And / or, the width of the third sub-isolation groove is 20-40µm.

4. The two-terminal stacked solar cell assembly according to claim 1, characterized in that: The first sub-isolation groove runs through the first carrier transport layer and the wide bandgap perovskite absorption layer, the second sub-isolation groove runs through the second carrier transport layer, the tunneling recombination layer and the third carrier transport layer, and the third sub-isolation groove runs through the narrow bandgap perovskite absorption layer and the fourth carrier transport layer.

5. The two-terminal stacked solar cell assembly according to claim 1, characterized in that: The first sub-isolation groove penetrates the first carrier transport layer and the wide bandgap perovskite absorption layer, the second sub-isolation groove penetrates the second carrier transport layer and the tunneling recombination layer, and the third sub-isolation groove penetrates the third carrier transport layer, the narrow bandgap perovskite absorption layer and the fourth carrier transport layer.

6. The two-terminal stacked solar cell assembly according to claim 1, characterized in that: The first sub-isolation groove penetrates the first carrier transport layer, the wide bandgap perovskite absorption layer and the second carrier transport layer, the second sub-isolation groove penetrates the tunneling composite layer, and the third sub-isolation groove penetrates the third carrier transport layer, the narrow bandgap perovskite absorption layer and the fourth carrier transport layer.

7. The two-terminal stacked solar cell assembly according to claim 1, characterized in that: The first sub-isolation groove penetrates the first carrier transport layer, the wide bandgap perovskite absorption layer and the second carrier transport layer, the second sub-isolation groove penetrates the tunneling composite layer and the third carrier transport layer, and the third sub-isolation groove penetrates the narrow bandgap perovskite absorption layer and the fourth carrier transport layer.

8. A method for preparing a two-terminal stacked solar cell module according to any one of claims 1 to 7, characterized in that: The preparation method comprises the following steps: A transparent bottom electrode layer, a first carrier transport layer, a wide bandgap perovskite absorption layer, a second carrier transport layer, a tunneling recombination layer, a third carrier transport layer, a narrow bandgap perovskite absorption layer, a fourth carrier transport layer and a back electrode layer are sequentially stacked on a substrate to obtain the two-terminal stacked solar cell module; Among them, before the first carrier transport layer is formed, P1 scribing is performed first to cut the transparent bottom electrode layer; before the second carrier transport layer is formed, P2-1 scribing is performed first to cut the first carrier transport layer and the wide bandgap perovskite absorption layer; or, before the tunneling composite layer is formed, P2-1 scribing is performed first to cut the first carrier transport layer, the wide bandgap perovskite absorption layer and the second carrier transport layer; before the narrow bandgap perovskite absorption layer is formed or before the third carrier transport layer is formed, P2-2 scribing is performed first to at least cut the tunneling composite layer; before the back electrode layer is formed, P2-3 scribing is performed first to at least cut the narrow bandgap perovskite absorption layer and the fourth carrier transport layer; after the back electrode layer is formed, P3 scribing is performed until the tunneling composite layer is cut.

9. The preparation method according to claim 8, characterized in that: The P2-1 scribe line cuts through the first carrier transport layer and the wide bandgap perovskite absorption layer, the P2-2 scribe line cuts through the second carrier transport layer, the tunneling recombination layer and the third carrier transport layer, and the P2-3 scribe line cuts through the narrow bandgap perovskite absorption layer and the fourth carrier transport layer; or, The P2-1 scribe line cuts through the first carrier transport layer and the wide bandgap perovskite absorption layer, the P2-2 scribe line cuts through the second carrier transport layer and the tunneling composite layer, and the P2-3 scribe line cuts through the third carrier transport layer, the narrow bandgap perovskite absorption layer, and the fourth carrier transport layer; or, The P2-1 scribe line cuts through the first carrier transport layer, the wide bandgap perovskite absorption layer and the second carrier transport layer, the P2-2 scribe line cuts through the tunneling composite layer, and the P2-3 scribe line cuts through the third carrier transport layer, the narrow bandgap perovskite absorption layer and the fourth carrier transport layer; or, The P2-1 scribe line cuts through the first carrier transport layer, the wide bandgap perovskite absorption layer and the second carrier transport layer, the P2-2 scribe line cuts through the tunneling composite layer and the third carrier transport layer, and the P2-3 scribe line cuts through the narrow bandgap perovskite absorption layer and the fourth carrier transport layer.

10. The preparation method according to claim 8, characterized in that: The methods of performing the P1 scribing, the P2-1 scribing, the P2-2 scribing and the P3 scribing each independently include a laser scribing method or a mechanical scribing method.

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