Vapor deposition apparatus

Abstract

The embodiment of the present specification provides a kind of vapor deposition equipment, comprising: deposition chamber, upper portion is provided with opening, for reaction gas input;At least one bearing platform is set in deposition chamber, adapted to carry wafer;Spraying device is set in deposition chamber, it is opposite to set with bearing platform, and it is connected with opening, adapted to spray reaction gas to wafer surface, to form deposition film on wafer surface;Heating device is set below corresponding bearing platform, adapted to provide heat for corresponding wafer;Heating device includes multiple heating elements, each heating element is connected with different power supply, and the voltage value of each heating element connected power supply is related to reaction gas parameter, the resistance value of corresponding heating element, and the physical parameter of deposition film, the distance between deposition film and the center position of corresponding bearing platform, initial temperature, deposition time.Using the above equipment, the uniformity of wafer surface deposition film thickness can be improved.

Description

Technical Field

[0001] This specification relates to the field of semiconductor manufacturing technology, and more particularly to a vapor deposition apparatus. Background Technology

[0002] In semiconductor manufacturing, masking is a crucial step in patterning the wafer surface. During masking, the wafer is placed in a vapor deposition apparatus, where a mixture of metal ions and gas reacts to form a thin film on the wafer surface.

[0003] Existing vapor deposition equipment typically includes a support platform for supporting multiple wafers, and a heating unit located below the support platform and in the central region of the support platform to provide the temperature required for the reaction during the formation of the deposited thin film.

[0004] However, due to the varying distances between different wafers and the heating unit, the temperature of the wafer surface in the central region of the support platform is higher than that in its edge region. This temperature, in turn, affects the deposition rate of the thin film on the wafer surface, resulting in a thin film thickness in the central region of the support platform being lower than that in the edge region. Therefore, using existing vapor deposition equipment, the thickness of the deposited thin film on the wafer surface is inconsistent, exhibiting poor uniformity. Summary of the Invention

[0005] In view of this, embodiments of this specification provide a vapor deposition apparatus that can improve the uniformity of the thickness of the deposited thin film on the wafer surface.

[0006] This specification provides an embodiment of a vapor deposition apparatus, comprising:

[0007] The deposition chamber has an opening at the top for the input of reaction gases;

[0008] At least one support platform is disposed in the deposition chamber, adapted to support a wafer, and the center of the support platform is located on the same axis as the center of the wafer, so as to form a deposited thin film on the wafer surface;

[0009] A spraying device is disposed in the deposition chamber, opposite to the support platform, and connected to the opening, and is suitable for spraying the reaction gas onto the wafer surface;

[0010] A heating device is installed below the corresponding support platform and is suitable for providing heat to the corresponding wafer. The heating device includes multiple heating elements, each of which is connected to a different power source. The voltage value of the power source connected to each heating element is related to the parameters of the reaction gas, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding support platform, the initial temperature, and the deposition time.

[0011] Optionally, the voltage of the power supply connected to each heating element and the parameters of the reactant gas, the resistance of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding support platform, the initial temperature, and the deposition time satisfy the following correspondence:

[0012]

[0013] Where u is suitable for characterizing the voltage value of the power supply connected to the corresponding heating element; k is suitable for characterizing the Boltzmann constant, E a Suitable reaction activation energy for reacting gases, K s0 Suitable for characterizing the reaction coefficient constant and C of reacting gases g R is suitable for characterizing the concentration of the reactant gas, R is suitable for characterizing the resistance of the corresponding heating element, C is suitable for characterizing the specific heat capacity of the deposited film, m is suitable for characterizing the mass of the deposited film corresponding to the heating element, N is suitable for characterizing the molecular density of the deposited film, h0 is suitable for characterizing the thickness of the deposited film in the central region of the support platform, C1 is suitable for characterizing the deviation coefficient of the deposited film, x is suitable for characterizing the distance between the deposited film and the center position of the corresponding support platform, T0 is suitable for characterizing the initial temperature, and t is suitable for characterizing the deposition time.

[0014] Optionally, all heating elements have the same physical parameters.

[0015] Optionally, the heating elements are arranged in a circular array below the support platform.

[0016] Optionally, the spraying device includes: a gas channel and a plurality of nozzles disposed in the gas channel, wherein: the gas channel is connected to the opening and has an air supply port, and the air supply port is connected to each nozzle.

[0017] Optionally, each nozzle is evenly arranged inside the gas channel.

[0018] Optionally, the bottom of the deposition chamber is provided with an exhaust port to discharge the reacted gas.

[0019] Optionally, the vapor deposition apparatus further includes a gas flow control device adapted to control the flow rate of the reactive gas entering the deposition chamber.

[0020] Optionally, the gas flow control device includes:

[0021] Gas supply module, adapted to supply the reaction gas;

[0022] A control module, coupled to the gas supply module, is adapted to control the gas supply flow rate of the gas supply module.

[0023] Optionally, the vapor deposition apparatus further includes a vacuum device connected to the deposition chamber and adapted to provide a vacuum environment for the deposition chamber.

[0024] Using the vapor deposition apparatus provided in the embodiments of this specification, the heating device may include multiple heating elements, each located below a corresponding support platform, to provide heat to the wafer above the support platform, thereby changing the temperature of the wafer surface. Since each heating element can be connected to a different power source, and the voltage of the power source connected to each heating element is related to the parameters of the reactant gas, the resistance of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center of the corresponding support platform, the initial temperature, and the deposition time, different voltages can be provided to different areas of the wafer surface according to the process requirements of different areas. This generates different amounts of heat, reduces the temperature difference between different areas of the wafer surface, minimizes the difference in deposition rate between different areas of the wafer surface, and thus improves the uniformity of the deposited film thickness on the wafer surface.

[0025] Furthermore, by ensuring that the physical parameters of each heating element are identical, and keeping other parameters constant, the heat generated by each heating element can be controlled by changing the voltage of the power supply connected to the corresponding heating element, making the operation simple.

[0026] Furthermore, by distributing the heating elements in a circular array below the support platform, the distribution of the heating elements can be made more uniform, the heat generated can be more uniform, and the temperature distribution between different areas of the wafer surface can be more uniform, which can reduce the temperature difference between different areas and further improve the uniformity of the thickness of the thin film deposited on the wafer surface.

[0027] Furthermore, the spraying device may include a gas channel and multiple nozzles disposed within the gas channel. Since each nozzle is uniformly disposed within the gas channel, the consistency of the sprayed reactive gas can be improved, thereby further improving the uniformity of the thin film deposited on the wafer surface.

[0028] Furthermore, an exhaust port is provided at the bottom of the deposition chamber, which can discharge the gas remaining in the deposition chamber when the deposition process is completed or when new reaction gas needs to be introduced.

[0029] Furthermore, the vapor deposition apparatus may also include a gas flow control device, which can control the flow rate of the reactive gas entering the deposition chamber, thereby changing the deposition time required.

[0030] Furthermore, the vapor deposition apparatus may also include a vacuum device, which can be connected to the deposition chamber and can draw gas from the deposition chamber to provide a vacuum environment for the deposition chamber. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 A schematic diagram showing the distribution of wafers on a support platform in a vapor deposition apparatus is shown.

[0033] Figure 2 It shows Figure 1 A schematic diagram of a thin film deposited on the surface of a wafer;

[0034] Figure 3a A schematic diagram of a vapor deposition apparatus as shown in this specification is illustrated.

[0035] Figure 3b for Figure 3a A partial enlarged view of the heating device;

[0036] Figure 4 A schematic diagram showing the distribution of a heating element under a support platform in an embodiment of this specification is shown;

[0037] Figure 5 This diagram illustrates a specific application scenario of the deposition of a thin film on a wafer surface.

[0038] Figure 6 A schematic diagram of a spraying device according to an embodiment of this specification is shown. Detailed Implementation

[0039] As described in the background art, in current vapor deposition equipment, due to the different distances between different areas of the wafer surface supported on the support platform and the heating unit, the film thickness deposited on the wafer located in the central area of ​​the support platform is lower than that of the film thickness in the edge area during the deposition process.

[0040] To more clearly illustrate the problems in the prior art, the following detailed explanation is provided with reference to the accompanying drawings and specific examples.

[0041] like Figure 1 The diagram shows the distribution of the vapor deposition equipment on the support platform, which is a schematic diagram of the vapor deposition equipment from a top-down view.

[0042] exist Figure 1 In the aforementioned vapor deposition apparatus, multiple support platforms (e.g., ...) can be installed within a reaction chamber 10. Figure 1 The carrier platforms 21 to 24 shown each support a wafer (e.g., wafer W1 is supported on carrier platform 21, wafer W2 on carrier platform 22, wafer W3 on carrier platform 23, and wafer W4 on carrier platform 24), thereby enabling the simultaneous vapor deposition process of multiple wafers. Correspondingly, a heating device ( Figure 1 (Not shown) can be located below the support platform 10 and is situated in the central region of the reaction chamber 10.

[0043] The thickness of the thin film deposited on each wafer varies because different areas on the wafer surface are at different distances from the heating device. For example, the distances between different areas on the surface of wafer W1 and the heating device are all different.

[0044] For ease of explanation and understanding, the thickness of the thin film deposited on wafer W1 will be used as an example.

[0045] Continue to refer to Figure 1 Along the direction shown by the dashed line L in the figure, arbitrarily select 3 points on the surface of wafer W1, that is... Figure 1 Points A, B, and C are located at different distances from the heating device. Measurements show that the area at point A has the lowest temperature, while the area at point C has the highest temperature.

[0046] After a deposition process, such as Figure 2 As shown, a thin film 20 can be formed on the surface of wafer W1, but the thickness of the deposited film is inconsistent. The deposited film is thickest in the region where point A is located, while it is thinnest in the region where point C is located.

[0047] It is understandable that the formation of the thin films deposited on wafers W2 to W4 can be referenced from wafer W1, and will not be elaborated further here.

[0048] To address the aforementioned technical problems, embodiments of this specification provide a vapor deposition apparatus. The heating device may include multiple heating elements, each positioned below a corresponding support platform to provide heat to the wafer above the support platform, thereby altering the wafer surface temperature. Since each heating element can be connected to a different power source, and the voltage of the power source connected to each heating element is related to the parameters of the reactant gas, the resistance of the corresponding heating element, the physical parameters of the deposited thin film, the distance between the deposited thin film and the center of the corresponding support platform, the initial temperature, and the deposition time, different voltages can be provided to different regions of the wafer surface according to their process requirements. This generates different amounts of heat, reducing the temperature difference between different regions of the wafer surface, resulting in a smaller difference in the deposition rate of the deposited thin film in different regions of the wafer surface, and thus improving the uniformity of the deposited thin film thickness on the wafer surface.

[0049] To enable those skilled in the art to better understand and implement the vapor deposition apparatus in the embodiments of this specification, a detailed description is provided below with reference to the accompanying drawings and specific application examples.

[0050] Reference Figure 3a and Figure 3b ,in, Figure 3a This is a schematic diagram of a vapor deposition apparatus provided in an embodiment of this specification. Figure 3b for Figure 3a A partially enlarged view of the heating device. (Refer to reference) Figure 3a and 3b In some embodiments of this specification, the vapor deposition apparatus T may include: a deposition chamber 110, at least one support platform (such as...) Figure 3a The shown are the support platforms 120 and 121, the spraying device 130, and the heating device 140.

[0051] For ease of explanation and understanding, the following example uses a wafer W5 mounted on the support platform 120 to illustrate the vapor deposition equipment T in the embodiments of this specification. Wherein:

[0052] The deposition chamber 110 has an opening 111 at its upper part for the input of reaction gas;

[0053] At least one support platform 120 is disposed within the deposition chamber 110, suitable for supporting the wafer W5, and the center of the support platform 120 and the center of the wafer W5 are located on the same axis (e.g., Figure 3a (As shown by the dashed line) on;

[0054] The spraying device 130 is disposed in the deposition chamber 110, opposite to the support platform 120, and connected to the opening 111, and is suitable for spraying the reaction gas onto the surface of the wafer W.

[0055] Heating device 140, disposed below the corresponding support platform 120, is adapted to provide heat to the corresponding wafer W; the heating device 140 includes multiple heating elements (such as... Figure 3b The heating elements 141a to 141f shown are each connected to a different power source. Figure 3a and 3b (None of which are shown) The connection is such that the voltage value of the power supply connected to each heating element is related to the parameters of the reaction gas, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding support platform, the initial temperature, and the deposition time.

[0056] The vapor deposition equipment with the above structure allows each heating element to be connected to a different power source. The voltage of the power source connected to each heating element is related to the parameters of the reactant gas, the resistance of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center of the corresponding support platform, the initial temperature, and the deposition time. Therefore, different voltages can be provided to different regions of the wafer surface according to the process requirements of different regions, thereby generating different amounts of heat. This reduces the temperature difference between different regions of the wafer surface, resulting in a smaller difference in the deposition rate of the deposited film in different regions of the wafer surface, and thus improving the uniformity of the deposited film thickness on the wafer surface.

[0057] The deposition process of wafer W6, which is mounted on the carrier platform 121, can be found in the description of wafer W5, and will not be elaborated here.

[0058] It should be noted that the above example uses a vapor deposition apparatus with two support platforms, and this does not limit the number of support platforms. In practical applications, vapor deposition apparatuses can have multiple support platforms, and the specific number of support platforms can be determined according to specific circumstances and requirements. This specification does not impose a specific limit on the number of support platforms in the embodiments.

[0059] It is understood that the number of heating elements in the heating device is for illustrative purposes only. In actual implementation, the number of heating elements can be increased or decreased according to the heat required by the reacting gases.

[0060] In some embodiments of this specification, the vapor deposition equipment may be a plasma-enhanced chemical vapor deposition equipment or a high-density plasma chemical vapor deposition equipment, depending on the deposition process.

[0061] In specific implementation, refer to Figure 3a and 3bThe support platform 120 can be located on top of the heating device 140. Its size and shape can match the wafer W5 to be supported, and are usually equal to or slightly larger than the size of the wafer W5. Therefore, the surface shape (i.e., top view structure) of the support platform 120 is usually circular.

[0062] Correspondingly, the surface shape of the heating device 140 is also circular. Specifically, the surface area of ​​the heating device 140 may be the same as or slightly larger than that of the support platform 120. This specification does not impose specific limitations on this embodiment, as long as the support platform 120 can be mounted on the heating device 140.

[0063] It is understandable that if the wafer to be supported is of other shapes, the shapes of the support platform and the heating device can be adjusted accordingly. This embodiment is not strictly limited, as long as the shapes of the three are compatible.

[0064] In practice, the material of the carrier platform 120 is matched with the material of the wafer W5.

[0065] For example, the material of the support platform can be aluminum nitride, alumina ceramic, or a composite material, such as a composite structure of metal material with coatings of chromium oxide, aluminum oxide, aluminum nitride, etc. The wafer can be fixed to the support platform by a pressure ring structure located above the support platform, or fixed to the surface of the support platform by electrostatic adsorption or vacuum adsorption.

[0066] In the embodiments described in this specification, a carrier wafer is used as an example. In specific implementations, the device for which the thin film needs to be deposited can also be a substrate or other semiconductor structures that already have a thin film.

[0067] Furthermore, the material of the thin film deposited on the substrate is not limited; it can be an oxide thin film, a nitride thin film, or a combination of oxide and nitride thin films. The embodiments in this specification do not limit this.

[0068] In a specific implementation, the area located below the support platform may have multiple heating elements (e.g., Figure 3b The heating elements 141a to 141f shown in the figure can generate different amounts of heat by supplying power to the heating elements, thereby generating different temperatures on the surface of the wafer.

[0069] In some embodiments of this specification, the voltage of the power supply connected to each heating element is related to the parameters of the reactant gas, the resistance of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding support platform, the initial temperature, and the deposition time.

[0070] In practice, based on the aforementioned parameter values, a preset calculation method can be used to obtain the voltage values ​​of the power supplies connected to each heating element.

[0071] As a specific example, the voltage value of the power supply connected to each heating element, the parameters of the reactant gas, the resistance value of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding support platform, the initial temperature, and the deposition time satisfy the following correspondence:

[0072]

[0073] Where u is suitable for characterizing the voltage value of the power supply connected to the corresponding heating element; k is suitable for characterizing the Boltzmann constant, E a Suitable reaction activation energy for reacting gases, K s0 Suitable for characterizing the reaction coefficient constant and C of reacting gases g R is suitable for characterizing the concentration of the reactant gas, R is suitable for characterizing the resistance of the corresponding heating element, C is suitable for characterizing the specific heat capacity of the deposited film, m is suitable for characterizing the mass of the deposited film corresponding to the heating element, N is suitable for characterizing the molecular density of the deposited film, h0 is suitable for characterizing the thickness of the deposited film in the central region of the support platform, C1 is suitable for characterizing the deviation coefficient of the deposited film, x is suitable for characterizing the distance between the deposited film and the center position of the corresponding support platform, T0 is suitable for characterizing the initial temperature, and t is suitable for characterizing the deposition time.

[0074] The formula for the voltage value of the power supply connected to the corresponding heating element can be obtained through the following derivation process.

[0075] First, the thickness of the deposited film satisfies the following relationship:

[0076] h = v d *t (1)

[0077] Among them, h is suitable for characterizing the thickness of the deposited film, v d Suitable for characterizing deposition rate, t is suitable for characterizing deposition time.

[0078] Through numerous experiments, the inventors discovered that the thickness of the thin film deposited in different areas of the wafer surface is related to the distance between the deposited film and the center of the corresponding support platform:

[0079]

[0080] Where h0 is suitable for characterizing the thickness of the deposited film in the central region of the support platform, C1 is suitable for characterizing the deviation coefficient of the deposited film, and x is suitable for characterizing the distance between the deposited film and the center position of the corresponding support platform.

[0081] In some implementations of this specification, Where r is suitable for characterizing the radius of the wafer.

[0082] From formulas (1) and (2), we can obtain:

[0083]

[0084] During vapor deposition, there is a corresponding relationship between the temperature and deposition rate in different regions of the deposition chamber. In a specific example, the thin film deposition rate can be:

[0085] v d =K s0 exp(-E a / kT)*c g / N (4)

[0086] Among them, K s0 Suitable for characterizing the reaction coefficient constant, E of reacting gases a The activation energy of the reacting gas is suitable, k is suitable for characterizing the Boltzmann constant, T is suitable for characterizing the temperature of each region in the deposition chamber, and C is suitable for characterizing the temperature of each region in the deposition chamber. g Suitable for characterizing the concentration of reactive gases, N is suitable for characterizing the molecular density of deposited thin films.

[0087] In specific implementation, C g E a N, K s0 All of them can be considered as constant parameters.

[0088] From formulas (3) and (4), we can obtain:

[0089]

[0090] Furthermore, the relationship between temperature and distance can be derived:

[0091]

[0092] in,

[0093] Assuming the wafer edge temperature is the initial temperature T0 and its radius is constant, the temperature at all points on the wafer needs to be reduced by T. (x) -T0, correspondingly, the heat output that each heating element needs to reduce is:

[0094] Q (x) =C*m*(T (x) -T0) (7)

[0095] Among them, Q (x) C is suitable for characterizing heat generation, C is suitable for characterizing the specific heat capacity of the deposited film, and m is suitable for characterizing the mass of the deposited film corresponding to the heating element.

[0096] The relationship between heat generation and power is as follows:

[0097] Q (x) =P*t (8)

[0098] The power output is related to the voltage applied across each resistor:

[0099]

[0100] According to formulas (6) to (9) above, we can obtain:

[0101]

[0102] Right now:

[0103]

[0104] The above calculation method is only an example. In the embodiments of this specification, the specific calculation method of the voltage value of the power supply connected to each heating element is not limited, as long as the corresponding power supply voltage value can be calculated based on the above parameter values.

[0105] In some embodiments of this specification, the physical parameters of each heating element are identical. By making the physical parameters of each heating element identical, and keeping other parameters constant, the heat generated by each heating element can be controlled by changing the voltage of the power supply connected to the corresponding heating element, making operation simple.

[0106] Specifically, the shape, structure, mechanical structure, density, electrical parameters and other parameters of each heating element are the same. The only difference between the heating elements is their distribution position under the support platform.

[0107] As a specific example, the heating element can be a resistor in one or more of the following shapes: filament, sheet, plate, mesh, disc, tube, rod, cylinder, cloth, strip, or others.

[0108] Furthermore, the arrangement of each heating element in the heating device can vary depending on the structure of the heating element. For example, if the heating element is plate-shaped or strip-shaped, the heating elements can be symmetrically distributed.

[0109] The heating element can be made of nickel-chromium, nickel-chromium-iron alloy, iron-chromium-aluminum alloy, platinum, tantalum, niobium, tungsten, molybdenum or other metals or alloys, or non-metallic materials including silicon carbide, molybdenum dioxide, graphite, alumina and aluminum nitride, or a combination of multiple materials.

[0110] The embodiments in this specification do not limit the specific structure or materials of the heating elements, as long as all heating elements are the same.

[0111] In some other examples in this specification, the physical parameters of the heating elements may be partially the same or completely different.

[0112] In practice, each heating element can be located on the same horizontal plane, meaning that each heating element is at the same distance from the lower surface of the support platform.

[0113] For example, continue to refer to Figure 3b The vertical distances between heating elements 141a to 141f and the support platform 120 are all the same. Therefore, given a fixed voltage coefficient, the power supply voltage can be determined solely based on the distance between the center of the heating element and the corresponding center of the support platform.

[0114] In an alternative example, heating elements 141a to 141f can be directly disposed on the lower surface of the support platform 120, that is, the vertical distance between the heating elements 141a to 141f and the support platform 120 is 0.

[0115] In specific implementation, combined with Figure 3b and refer to Figure 4 Each heating element is arranged in a circular array below the support platform 120.

[0116] By distributing the heating elements in a circular array below the support platform, the distribution of heating elements can be made more uniform, the heat generated can be more uniform, and the temperature distribution between different areas of the wafer surface can be more uniform, which can reduce the temperature difference and further improve the uniformity of the thickness of the thin film deposited on the wafer surface.

[0117] Continue to refer to Figure 4 When the heating elements E are arranged in a circular array, some heating elements E are equidistant from the center of the support platform 120. For the heating elements E equidistant from the center of the support platform 120, they can be connected to the same power supply simultaneously, thus simplifying the power supply structure.

[0118] Therefore, by considering the voltage of the power supply connected to each heating element, the parameters of the reactant gas, the resistance of the corresponding heating element, the physical parameters of the deposited film, the distance between the deposited film and the center position of the corresponding support platform, the initial temperature, and the deposition time, the power supply voltage of the corresponding heating element can be determined. This can reduce the temperature difference between different regions of the wafer surface, resulting in a smaller difference in the deposition rate of the deposited film in different regions of the wafer surface.

[0119] For example, refer to Figure 5 A schematic diagram of the thin film deposition on the wafer surface described in the embodiments of this specification is shown below. Figure 5 As shown, the thickness of the thin film 31 deposited on the surface of wafer 30 is the same, and... Figure 2Compared to the thickness of the deposited film shown in the diagram, it exhibits better uniformity.

[0120] In some embodiments of this specification, reference continues to be made to... Figure 3b The heating device 140 may also include a wire 144, through which the connection between each heating element and the power supply can be realized.

[0121] Because the heating element generates a large amount of heat during operation, a high temperature will be generated in the deposition chamber. Even after the deposition process is completed, the temperature inside the deposition chamber remains high. Therefore, the heating device 140 in this embodiment may further include a cooling module 143. The cooling module 143 can accelerate heat dissipation and rapidly reduce the temperature inside the deposition chamber.

[0122] In a specific implementation, the cooling module can be a cooling pipe, which is filled with a cooling substance, including one or both of coolant and cooling liquid.

[0123] In practical applications, the heating device 140 may also include a protective layer 142, which is located outside the cooling module 143 and can prevent damage to the wiring inside the support platform during the deposition process.

[0124] In practice, to reduce the heat transfer between different heating elements, heat insulation rings or insulating materials can be installed between adjacent heating elements.

[0125] In some embodiments of this specification, combined with Figure 3a , refer to Figure 6 The spraying device 130 may include: a gas passage 131 and a plurality of nozzles (such as...) disposed within the gas passage 131. Figure 6 (Illustrated nozzles N1-N24), wherein: the gas passage 131 is connected to the opening 111 and has an air supply port 132, the air supply port 132 being connected to each nozzle.

[0126] In a specific implementation, the reaction gas can enter the spraying device 130 through the opening 111. Since the opening 111 can be connected to the gas supply port 132, the reaction gas can be sprayed onto the surface of the wafer through the nozzles N1-N24.

[0127] In practice, each nozzle can be uniformly positioned inside the gas channel, which can improve the consistency of the sprayed reaction gas and further improve the uniformity of the thin film deposited on the wafer surface.

[0128] In some embodiments of this specification, when the deposition process is completed or when new reactive gas needs to be introduced, the gas remaining in the deposition chamber needs to be vented. Based on this, refer to... Figure 3aThe bottom of the deposition chamber 110 is provided with an exhaust port 150 to discharge the reacted gas.

[0129] It is understood that, depending on the specific application scenario and requirements, the vapor deposition equipment provided in the embodiments of this specification can be adaptively selected and / or modified. For example, the number of some components in the vapor deposition equipment can be changed; the size of some components in the vapor deposition equipment can be adjusted; or some components in the vapor deposition equipment can be replaced by equivalent components. Based on this, more implementation schemes for filtration devices can be derived, and the embodiments of this specification do not limit these derived schemes.

[0130] As an optional example, the vapor deposition apparatus provided in the embodiments of this specification may further include a gas flow control device adapted to control the flow rate of the reactive gas entering the deposition chamber.

[0131] The gas flow control device may include: a gas supply module adapted to supply the reaction gas; and a control module coupled to the gas supply module and adapted to control the gas supply flow rate of the gas supply module.

[0132] In some embodiments of this specification, the gas supply module may provide one or more reactive gases.

[0133] As another optional example, the vapor deposition apparatus provided in the embodiments of this specification may further include a vacuum device connected to the deposition chamber and adapted to provide a vacuum environment for the deposition chamber.

[0134] The vacuum device can be a vacuum pump. Before the deposition process, a vacuum pump can be used to evacuate the gas from the deposition chamber.

[0135] While the embodiments disclosed in this specification are as described above, the present invention is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A vapor deposition apparatus characterized by comprising: The application relates to a deposition chamber and a deposition method. The deposition chamber comprises an upper part provided with an opening for inputting reaction gas; At least one supporting platform is arranged in the deposition chamber and is adapted to support a wafer, and the center of the supporting platform is on the same axis as the center of the wafer; A spraying device is arranged in the deposition chamber and is opposite to the supporting platform and is connected to the opening and is adapted to spray the reaction gas to the wafer surface to form a deposition film on the wafer surface; A heating device is arranged below the corresponding supporting platform and is adapted to provide heat for the corresponding wafer; the heating device comprises a plurality of heating elements, each heating element is connected to a different power supply, and the voltage value of the power supply connected to each heating element is related to the reaction gas parameters, the resistance value of the corresponding heating element, and the physical parameters of the deposition film, the distance between the deposition film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time.

2. The vapor deposition apparatus according to claim 1, wherein The voltage value of the power supply connected to each heating element is related to the reaction gas parameters, the resistance value of the corresponding heating element, and the physical parameters of the deposition film, the distance between the deposition film and the center position of the corresponding supporting platform, the initial temperature, and the deposition time, and satisfies the following corresponding relationship: wherein u is adapted to represent the voltage value of the power supply connected to the respective heating element; k is adapted to represent the Boltzmann constant, E a adapted to represent the reaction activation energy of the reaction gas, K s0 adapted to represent the reaction coefficient constant of the reaction gas, C g adapted to represent the concentration of the reaction gas, R is adapted to represent the resistance value of the respective heating element, C is adapted to represent the specific heat capacity of the deposited film, m is adapted to represent the mass of the deposited film corresponding to the respective heating element, N is adapted to represent the molecular density of the deposited film, ho is adapted to represent the thickness of the deposited film in the central region of the support platform, Ci is adapted to represent the deposited film deviation coefficient, x is adapted to represent the distance between the deposited film and the central position of the respective support platform, To is adapted to represent the initial temperature, t is adapted to represent the deposition time.

3. The vapor deposition apparatus according to claim 1, wherein The physical parameters of each heating element are the same.

4. The vapor deposition apparatus according to claim 1, wherein Each heating element is arranged in a circular array below the supporting platform.

5. The vapor deposition apparatus according to claim 1, wherein The spraying device comprises a gas channel and a plurality of spray heads arranged in the gas channel, wherein the gas channel is connected to the opening and has a gas inlet connected to each spray head.

6. A vapour deposition apparatus as claimed in claim 5, wherein, Each spray head is uniformly arranged in the gas channel.

7. The vapor deposition apparatus according to claim 1, wherein The bottom of the deposition chamber is provided with an exhaust port for exhausting the reacted gas.

8. The vapor deposition apparatus of claim 1, wherein, Further comprising: A gas flow control device adapted to control the flow of reaction gas into the deposition chamber.

9. A vapour deposition apparatus as claimed in claim 8, wherein, The gas flow control device comprises: A gas supply module adapted to supply the reaction gas; A control module coupled to the gas supply module and adapted to control the gas supply flow of the gas supply module.

10. The vapor deposition apparatus of claim 1, wherein Further comprising: A vacuum device connected to the deposition chamber and adapted to provide a vacuum environment for the deposition chamber.

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