Thermally optimized system for non-volatile memory

Abstract

The present invention relates to the field of heat dissipation optimization and analysis technology, and specifically to a heat dissipation optimization system for non-volatile memory, including: a working mode perception module: real-time identification of the working mode of the memory, including high-frequency random writing, high-density reading and mixed operation mode, generating a heat distribution prediction map based on the working mode, and predicting the high heat zone, transition zone, low heat zone and operation hotspot time period; a thermal energy hierarchical regulation module: adopting a hierarchical thermal management strategy, dynamically adjusting the heat dissipation intensity, ensuring that the heat dissipation resources are concentrated in the high heat zone to avoid global excessive heat dissipation; a write annealing effect optimization module: for the local heat accumulation caused by charge retention in the write operation of the non-volatile memory, an active cooling mechanism based on operation interval optimization is designed. The present invention avoids excessive or unbalanced global heat dissipation, significantly improves heat dissipation efficiency, reduces energy waste, and effectively reduces the additional energy consumption caused by excessive heat dissipation.

Description

Technical Field

[0001] The present invention relates to the technical field of heat dissipation optimization analysis, and in particular to a heat dissipation optimization system for a non-volatile memory. Background Art

[0002] With the widespread application of non-volatile memory (NVM) in high-performance computing, storage systems and embedded devices, its advantages in improving storage density and reducing energy consumption have been significantly recognized. However, with the continuous increase in memory read and write frequency and density, especially in high-frequency random write and high-density read working modes, the problem of local heat accumulation in non-volatile memory has become more and more serious. Heat accumulation will not only lead to memory performance degradation, but may also affect the reliability and life of the memory. Especially in intensive write operations, the charge retention effect will cause long-term heat accumulation, resulting in local overheating, thereby causing more serious thermal degradation problems.

[0003] At present, traditional heat dissipation optimization methods mainly rely on hardware heat dissipation design, such as heat sinks, multi-fan arrangements or improvements in material coatings, but these methods usually cannot effectively cope with the real-time thermal management needs of non-volatile memory under changing workloads. Existing technologies often cannot flexibly adjust heat dissipation strategies according to different working modes and write operation timings, and fail to fully consider the charge retention effect caused by high-frequency write operations, resulting in unreasonable or insufficient allocation of heat dissipation resources.

[0004] Therefore, how to monitor and effectively regulate heat dissipation resources in real time based on the heat generation rules of non-volatile memory in different working modes to cope with the problem of heat accumulation during write operations has become a key technical problem to improve system stability, extend service life and optimize energy efficiency. Summary of the invention

[0005] The present invention provides a heat dissipation optimization system for non-volatile memory.

[0006] Thermally optimized system for non-volatile memory, including:

[0007] Working mode perception module: collects high-speed read and write operation instructions through the interface with the non-volatile memory control unit, identifies the working mode of the memory in real time, including high-frequency random write, high-density read and mixed operation mode, generates heat distribution prediction map based on the working mode, and predicts high heat area, transition area, low heat area and operation hotspot time period;

[0008] Thermal energy hierarchical control module: Based on the high-heat zone, transition zone, low-heat zone and operation hotspot time period output by the working mode sensing module, a hierarchical thermal management strategy is adopted to dynamically adjust the heat dissipation intensity to ensure that the heat dissipation resources are concentrated in the high-heat zone to avoid global excessive heat dissipation;

[0009] Write annealing effect optimization module: To address the local heat accumulation caused by charge retention during non-volatile memory write operations, an active cooling mechanism based on operation interval optimization is designed to reduce the heat generation rate by controlling the write pulse sequence and delay strategy, thereby alleviating the intensity and duration of hot spot accumulation.

[0010] Optionally, the working mode perception module specifically includes:

[0011] Interface instruction acquisition unit: obtains the read and write instruction sequence of the memory by accessing the communication interface (SPI protocol) of the memory control unit, and identifies the current working mode of the memory by parsing the instruction type (read, write, erase, random write, continuous write) and operation frequency, including high-frequency random write, high-density read and mixed operation mode;

[0012] Heat distribution prediction unit: Utilizes the data characteristics of the memory working mode, and predicts the heat distribution inside the memory chip under different working modes through the heat generation model and the heat conduction model, including

[0013] High heat area: occurs in the area of ​​high-speed writing or erasing operations;

[0014] Transition zone: located between the high heat zone and the low heat zone, showing a gentle change in heat;

[0015] Low heat zone: an area with low heat distribution in low-frequency operation or idle state;

[0016] Operation hotspot time period: Based on the timing characteristics of read and write instructions, the entire monitoring sequence is divided into several time windows. The operation frequency of read and write operations is counted in each time window to predict the operation peak period of the memory, ensuring that the cooling system can respond in advance and optimize resource allocation.

[0017] Optionally, the heat generation model estimates the heat generation rate of the memory in different operating modes;

[0018] The heat conduction model describes how heat propagates and diffuses inside or around the memory, calculates the temperature change of different areas of the memory over time, and takes into account the heat diffusion process.

[0019] Optionally, the heat generation rate of the memory Affected by the working mode, the heat generation model is expressed as:

[0020] ,in, Indicates at location and time The heat generation rate, Indicates the current working mode of the memory, which changes over time. Indicates the working mode of the memory The heat generation coefficient defined indicates the intensity of heat generation in different operating modes. Indicates the location of each operating unit in the memory (such as storage unit, cache or control unit). and time The power consumption of the memory depends on the specific task of the memory.

[0021] Optionally, the heat propagation of the heat conduction model follows the classical heat conduction equation, which is expressed as:

[0022] ,in, Indicates memory location In time The temperature, Represents the thermal diffusivity, which describes the thermal conductivity of the material. The Laplace operator representing temperature represents the second-order partial derivative of temperature in space, reflecting the distribution of temperature in space. is the heat generation rate, Represents the specific heat capacity of a material.

[0023] Optionally, the thermal energy graded control module specifically includes:

[0024] Obtain high-heat area information and set the area as the priority allocation area for heat dissipation resources;

[0025] Obtain information about transition zones and low-heat zones, and lower the heat dissipation intensity in these zones to avoid excessive global heat dissipation;

[0026] Using a gradient-based allocation method, high-heat areas enjoy 50% of the heat dissipation resources, transition areas enjoy 30% of the heat dissipation resources, and low-heat areas enjoy 20% of the heat dissipation resources;

[0027] Based on the predicted operation hotspot time periods, short-term peak periods of heat generation are identified, and balanced heat dissipation is adopted during the operation hotspot time periods to alleviate heat accumulation caused by short-term temperature surges.

[0028] Optionally, the write annealing effect optimization module specifically includes:

[0029] Write operation monitoring unit: real-time monitoring of the write operation timing characteristics of non-volatile memory, including the operation frequency and duration , obtaining relevant data of the write operation through an interface with a memory control unit;

[0030] Charge Retention Induced Heat Estimation Unit: Based on the write operation timing of the memory, it identifies the write mode that induces charge retention and estimates the local heat accumulation caused by charge retention during the write operation, including heat generation coefficient based on Calculate local heat accumulation;

[0031] Pulse sequence optimization unit: To address the local heat accumulation caused by this, the time interval of the write pulses is optimized by controlling the time interval. A delay strategy is introduced between consecutive write operations to reduce the charge retention effect, including increasing the time interval Δtwrite between the write pulses so that there is enough time between each write operation to dissipate the heat.

[0032] Optionally, the local heat accumulation is calculated as: ,in, For in time The heat generated at any time, is the heat generation coefficient.

[0033] Optionally, the delay strategy also includes dynamically adjusting the pulse interval , for high-density write operations, dynamically increase the write interval according to the write operation timing , expressed as:

[0034] ,in, For time The pulse interval at time, is the basic pulse interval, is the adjustment coefficient used to control the growth degree of pulse interval. is the current operating frequency, is the maximum supported write frequency.

[0035] Beneficial effects of the present invention:

[0036] The present invention realizes dynamic heat management based on the working modes of non-volatile memory (such as high-frequency random writing, high-density reading and mixed operation modes) by introducing the working mode perception module and the thermal energy grading control module. This heat distribution control method based on real-time monitoring and prediction can not only accurately identify high-heat areas, transition areas and low-heat areas, but also can specifically adjust the allocation of heat dissipation resources to avoid excessive or unbalanced global heat dissipation, significantly improve the heat dissipation efficiency, reduce energy waste, and effectively reduce the additional energy consumption caused by excessive heat dissipation.

[0037] The present invention proposes a pulse interval optimization scheme based on write timing to address the charge retention effect in traditional non-volatile memory write operations. By introducing a delay strategy between high-frequency write operations, the heat accumulation caused by charge retention is reduced, thereby effectively reducing the impact of thermal effects on memory performance. Compared with traditional methods, the present invention optimizes the heat generation rate and reduces the intensity and duration of local hot spot accumulation under high-density writing conditions by dynamically adjusting the write pulse time interval, thereby extending the service life of the memory and improving the stability of the system. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only for the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0039] Figure 1 A schematic diagram of system function modules according to an embodiment of the present invention;

[0040] Figure 2 Schematic diagram of a write annealing effect optimization module according to an embodiment of the present invention. DETAILED DESCRIPTION

[0041] The present invention is described in detail below in conjunction with the accompanying drawings and specific embodiments. At the same time, it is explained here that in order to make the embodiments more detailed, the following embodiments are the best and preferred embodiments, and those skilled in the art may also adopt other alternatives to implement some known technologies; and the accompanying drawings are only for more specific description of the embodiments, and are not intended to specifically limit the present invention.

[0042] It should be noted that the references to "one embodiment", "embodiment", "exemplary embodiments", "some embodiments" and the like in the specification indicate that the embodiments described may include specific features, structures or characteristics, but not every embodiment may include the specific features, structures or characteristics. In addition, when a specific feature, structure or characteristic is described in conjunction with an embodiment, it should be within the knowledge of a person skilled in the art to implement such feature, structure or characteristic in conjunction with other embodiments (whether or not explicitly described).

[0043] In general, a term can be understood, at least in part, from its use in context. For example, depending, at least in part, on the context, the term "one or more" as used herein can be used to describe any feature, structure, or characteristic in the singular sense, or can be used to describe a combination of features, structures, or characteristics in the plural sense. Additionally, the term "based on" can be understood as not necessarily intended to convey an exclusive set of factors, but can instead, depending, at least in part, on the context, allow for the presence of other factors that are not necessarily explicitly described.

[0044] like Figure 1-Figure 2 A heat dissipation optimization system for a non-volatile memory is shown, comprising:

[0045] Working mode perception module: collects high-speed read and write operation instructions through the interface with the non-volatile memory control unit, identifies the working mode of the memory in real time, including high-frequency random write, high-density read and mixed operation mode, generates heat distribution prediction map based on the working mode, and predicts high heat area, transition area, low heat area and operation hotspot time period;

[0046] Thermal energy hierarchical control module: Based on the high-heat zone, transition zone, low-heat zone and operation hotspot time period output by the working mode sensing module, a hierarchical thermal management strategy is adopted to dynamically adjust the heat dissipation intensity to ensure that the heat dissipation resources are concentrated in the high-heat zone to avoid global excessive heat dissipation;

[0047] Write annealing effect optimization module: To address the local heat accumulation caused by charge retention during non-volatile memory write operations, an active cooling mechanism based on operation interval optimization is designed to reduce the heat generation rate by controlling the write pulse sequence and delay strategy, thereby alleviating the intensity and duration of hot spot accumulation.

[0048] The working mode perception module specifically includes:

[0049] Interface instruction acquisition unit: obtains the read and write instruction sequence of the memory by accessing the communication interface (SPI protocol) of the memory control unit, and identifies the current working mode of the memory by parsing the instruction type (read, write, erase, random write, continuous write) and operation frequency, including high-frequency random write, high-density read and mixed operation mode;

[0050] According to the characteristics of the instruction sequence, the current working state of the memory is judged in real time. Specifically:

[0051] High-frequency random write mode: When the memory receives a large number of random read and write requests, it is judged as high-frequency random write mode.

[0052] High-density read mode: When the memory is in a frequent read state and the amount of read data is large, it is judged to be in high-density read mode.

[0053] Mixed operation mode: When the memory contains both read and write operations and the data flow is uneven, it is judged as a mixed operation mode.

[0054] Heat distribution prediction unit: Utilizes the data characteristics of the memory working mode, and predicts the heat distribution inside the memory chip under different working modes through the heat generation model and the heat conduction model, including

[0055] High heat area: occurs in the area of ​​high-speed writing or erasing operations;

[0056] Transition zone: located between the high heat zone and the low heat zone, showing a gentle change in heat;

[0057] Low heat zone: an area with low heat distribution in low-frequency operation or idle state;

[0058] Operation hotspot time period: Based on the timing characteristics of read and write instructions, the entire monitoring sequence is divided into several time windows. The operation frequency of read and write operations is counted in each time window to predict the operation peak period of the memory, ensuring that the cooling system can respond in advance and optimize resource allocation.

[0059] The heat generation model estimates the heat generation rate of the memory in different operating modes (i.e., the heat generated per unit time). The model corresponds different operating modes to the heat generation rate, reflecting the basic source of heat generated by the memory when it is working. It provides heat source data for the heat conduction model and is the basis for subsequent heat propagation analysis.

[0060] The heat conduction model describes how heat propagates and diffuses inside or around the memory, calculates the temperature changes in different areas of the memory over time, and takes into account the heat diffusion process. The model is based on the heat source data provided by the heat generation model, simulates the heat conduction process inside the memory, and ultimately determines the temperature distribution in different areas. By solving the heat conduction equation, it can predict which areas may overheat.

[0061] Heat generation rate of memory Affected by the working mode, the heat generation model is expressed as:

[0062] ,in, Indicates at location and time The heat generation rate, Indicates the current working mode of the memory, which changes over time. Indicates the working mode of the memory The heat generation coefficient defined here indicates the intensity of heat generation in different operation modes. For example, high-frequency writing mode will generate higher heat, while reading mode will generate relatively lower heat. The memory is actually tested in different operation modes, the power consumption (or heat generation rate) of the memory in each operation mode is measured, and converted into the heat generation coefficient. Indicates the location of each operating unit in the memory (such as storage unit, cache or control unit). and time The power consumption of the memory depends on the specific task of the memory.

[0063] The heat transfer of the heat conduction model follows the classical heat conduction equation, which is expressed as:

[0064] ,in, Indicates memory location In time The temperature, Represents the thermal diffusivity, which describes the thermal conductivity of the material. The Laplace operator representing temperature represents the second-order partial derivative of temperature in space, reflecting the distribution of temperature in space. is the heat generation rate, Indicates the specific heat capacity of the material, which indicates the amount of heat required to change the temperature of the unit mass of the material by 1K, and the thermal diffusion coefficient Calculated by the following formula: ,in, is the thermal conductivity of the material, is the density of the material, is the specific heat capacity of the material.

[0065] The thermal energy graded control module specifically includes:

[0066] Obtain high-heat area information and set the area as the priority allocation area for heat dissipation resources;

[0067] Obtain information about transition zones and low-heat zones, and lower the heat dissipation intensity in these zones to avoid excessive global heat dissipation;

[0068] Using a gradient-based allocation method, high-heat areas enjoy 50% of the heat dissipation resources, transition areas enjoy 30% of the heat dissipation resources, and low-heat areas enjoy 20% of the heat dissipation resources;

[0069] Based on the predicted operation hotspot time periods, short-term peak periods of heat generation are identified, and balanced heat dissipation is adopted during the operation hotspot time periods to alleviate heat accumulation caused by short-term temperature surges.

[0070] The write annealing effect optimization module specifically includes:

[0071] Write operation monitoring unit: real-time monitoring of the write operation timing characteristics of non-volatile memory, including the operation frequency and duration , obtain the relevant data of the write operation through the interface with the memory control unit; write frequency Indicates the number of write operations per unit time: ,in, is the number of write operations per unit time, is the length of the sampling period, the duration of the write operation can be obtained through the memory control unit;

[0072] Charge Retention Induced Heat Estimation Unit: Based on the write operation timing of the memory, it identifies the write mode that induces charge retention and estimates the local heat accumulation caused by charge retention during the write operation, including heat generation coefficient based on Calculate local heat accumulation;

[0073] Pulse sequence optimization unit: To address the local heat accumulation caused by this, the time interval of the write pulses is optimized by controlling the time interval. A delay strategy is introduced between consecutive write operations to reduce the charge retention effect, including increasing the time interval Δtwrite between the write pulses so that there is enough time between each write operation to dissipate the heat.

[0074] The local heat accumulation is calculated as: ,in, For in time The heat generated at any time, is the heat generation coefficient.

[0075] The delay strategy also includes dynamically adjusting the pulse interval , for high-density write operations, dynamically increase the write interval according to the write operation timing , expressed as:

[0076] ,in, For time The pulse interval at time, is the basic pulse interval, is the adjustment coefficient used to control the growth degree of pulse interval. is the current operating frequency, is the maximum supported write frequency.

[0077] The present invention covers any substitution, modification, equivalent method and scheme made on the essence and scope of the present invention. In order to make the public have a thorough understanding of the present invention, specific details are described in detail in the following preferred embodiments of the present invention, but those skilled in the art can fully understand the present invention without the description of these details. In addition, in order to avoid unnecessary confusion about the essence of the present invention, well-known methods, processes, procedures, components and circuits are not described in detail.

[0078] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A heat dissipation optimization system for non-volatile memory, characterized in that: include: Working mode perception module: collects high-speed read and write operation instructions through the interface with the non-volatile memory control unit, identifies the working mode of the memory in real time, including high-frequency random write, high-density read and mixed operation mode, generates heat distribution prediction map based on the working mode, and predicts high heat area, transition area, low heat area and operation hotspot time period; Thermal energy hierarchical control module: Based on the high-heat zone, transition zone, low-heat zone and operation hotspot time period output by the working mode sensing module, a hierarchical thermal management strategy is adopted to dynamically adjust the heat dissipation intensity to ensure that the heat dissipation resources are concentrated in the high-heat zone to avoid global excessive heat dissipation; Write annealing effect optimization module: To address the local heat accumulation caused by charge retention during non-volatile memory write operations, an active cooling mechanism based on operation interval optimization is designed to reduce the heat generation rate by controlling the write pulse sequence and delay strategy, thereby alleviating the intensity and duration of hot spot accumulation. The write annealing effect optimization module specifically includes: Write operation monitoring unit: real-time monitoring of the write operation timing characteristics of non-volatile memory, including the operation frequency and duration ; Charge Retention Induced Heat Estimation Unit: Based on the write operation timing of the memory, it identifies the write mode that induces charge retention and estimates the local heat accumulation caused by charge retention during the write operation, including heat generation coefficient based on Calculate local heat accumulation; Pulse sequence optimization unit: To address the local heat accumulation caused by the pulses, the time interval between write pulses is optimized and a delay strategy is introduced between consecutive write operations to reduce the charge retention effect, including increasing the time interval Δtwrite between write pulses so that there is time to dissipate the heat between each write operation. The local heat accumulation is calculated as: ,in, For in time The heat generated at any time, is the heat generation coefficient; The delay strategy also includes dynamically adjusting the pulse interval , for high-density write operations, dynamically increase the write interval according to the write operation timing , expressed as: ,in, For time The pulse interval at time, is the basic pulse interval, is the adjustment coefficient used to control the growth degree of pulse interval. is the current operating frequency, is the maximum supported write frequency.

2. The heat dissipation optimization system for non-volatile memory according to claim 1, characterized in that: The working mode perception module specifically includes: Interface instruction acquisition unit: obtains the memory's read and write instruction sequence by accessing the memory control unit's communication interface, and identifies the memory's current operating mode by parsing the instruction type and operating frequency, including high-frequency random write, high-density read, and mixed operating modes; Heat distribution prediction unit: Utilizes the data characteristics of the memory working mode, and predicts the heat distribution inside the memory chip under different working modes through the heat generation model and the heat conduction model, including High heat area: occurs in the area of ​​high-speed writing or erasing operations; Transition zone: located between the high heat zone and the low heat zone, showing a gentle change in heat; Low heat zone: an area with low heat distribution in low-frequency operation or idle state; Operation hotspot time period: Based on the timing characteristics of read and write instructions, the entire monitoring sequence is divided into several time windows. The operation frequency of read and write operations is counted in each time window to predict the operation peak period of the memory.

3. The heat dissipation optimization system for non-volatile memory according to claim 2, characterized in that: The heat generation model estimates the heat generation rate of the memory in different operating modes; The heat conduction model describes how heat propagates and diffuses inside or around the memory, calculates the temperature change of different areas of the memory over time, and takes into account the heat diffusion process.

4. The heat dissipation optimization system for non-volatile memory according to claim 3, characterized in that: The heat generation rate of the memory Affected by the working mode, the heat generation model is expressed as: ,in, Indicates at location and time The heat generation rate, Indicates the current working mode of the memory, which changes over time. Indicates the working mode of the memory The heat generation coefficient defined indicates the intensity of heat generation in different operating modes. Indicates that each operation unit in the memory is at position and time power consumption.

5. The heat dissipation optimization system for non-volatile memory according to claim 4, characterized in that: The heat propagation of the heat conduction model follows the classical heat conduction equation, which is expressed as: ,in, Indicates memory location In time The temperature, Represents the thermal diffusivity, which describes the thermal conductivity of the material. The Laplace operator representing temperature represents the second-order partial derivative of temperature in space, reflecting the distribution of temperature in space. is the heat generation rate, Represents the specific heat capacity of a material.

6. The heat dissipation optimization system for non-volatile memory according to claim 1, characterized in that: The thermal energy graded control module specifically includes: Obtain high-heat area information and set the area as the priority allocation area for heat dissipation resources; Obtain information about transition zones and low-heat zones, and lower the heat dissipation intensity in these zones to avoid excessive global heat dissipation; Using a gradient-based allocation method, high-heat areas enjoy 50% of the heat dissipation resources, transition areas enjoy 30% of the heat dissipation resources, and low-heat areas enjoy 20% of the heat dissipation resources; Based on the predicted operation hotspot time periods, short-term peaks in heat generation are identified, and balanced cooling is adopted during the operation hotspot time periods.

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