Inductively heatable particles in semiconductor modules

Abstract

A method of producing a semiconductor module, the method comprising: providing a power module assembly comprising a bottom portion, a housing surrounding an interior volume above the bottom portion, and a power semiconductor die mounted to a power electronics carrier within the interior volume; filling the internal volume with a potting compound; providing inductively heatable particles within the power module assembly; and inductively heating the inductively heatable particles to activate and / or accelerate a chemical reaction in the potting compound.

Description

Background Art

[0001] Many different applications, such as automotive and industrial applications, use power modules. A power module may include multiple power semiconductor devices in a single package, wherein the power semiconductor devices are arranged as a power conversion circuit, such as a single-phase or multi-phase half-wave rectifier, a single-phase or multi-phase full-wave rectifier, a voltage regulator, an inverter, etc. Many applications utilizing power modules require the modules to withstand harsh environmental conditions, such as significant temperature changes, moisture, etc. Therefore, the power module may include an electrically insulating sealant that protects and electrically isolates the circuit system within the power module. There is a need to improve the process of forming the electrically insulating sealant. Summary of the invention

[0002] A method for producing a semiconductor module is disclosed. According to an embodiment, the method comprises: providing a power module assembly, the power module assembly comprising a bottom surface portion, a housing, and a power semiconductor die, the housing enclosing an internal volume above the bottom surface portion, the power semiconductor die being mounted to a power electronic device carrier within the volume; filling the internal volume with a potting compound; providing induction heatable particles within the power module assembly; and performing a curing process, the curing process comprising induction heating the induction heatable particles.

[0003] A semiconductor module is disclosed. According to an embodiment, the semiconductor module includes: a bottom surface portion; a housing surrounding an internal volume above the bottom surface portion; a power semiconductor die mounted to a power electronic device carrier within the internal volume; a potting compound in the internal volume; and inductively heatable particles, wherein the inductively heatable particles are within the potting compound or within a structure thermally coupled to the potting compound.

[0004] Those skilled in the art will recognize additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] The elements in the drawings are not necessarily drawn to scale relative to each other. Like reference numerals represent corresponding like parts. The features of the various illustrated embodiments may be combined unless they exclude each other. The embodiments are depicted in the drawings and described in detail in the following description.

[0006] Figure 1A and 1B A power semiconductor module according to an embodiment is shown. Figure 1A The power semiconductor module is shown from a cross-sectional side view perspective; Figure 1B The power semiconductor module is shown from a cross-sectional plan view perspective.

[0007] Figure 2 A power semiconductor module according to another embodiment is shown from a cross-sectional side view.

[0008] Figure 3A and 3B A power semiconductor module according to an embodiment is shown. Figure 3A The power semiconductor module is shown from a cross-sectional side view perspective; Figure 3B The power semiconductor module is shown from a cross-sectional plan view perspective.

[0009] Figure 4A and 4B A power semiconductor module according to an embodiment is shown. Figure 4A The power semiconductor module is shown from a cross-sectional side view perspective; Figure 4B The power semiconductor module is shown from a cross-sectional plan view perspective.

[0010] Figure 5 A power semiconductor module according to another embodiment is shown from a cross-sectional side view. DETAILED DESCRIPTION

[0011] A method and corresponding apparatus are described herein that utilize the advantageous rapid energy transfer capabilities of induction heating to accelerate the curing of a potting compound within a semiconductor module. The semiconductor module includes a housing that surrounds an internal volume above a power electronic device carrier on which a power semiconductor die is mounted. The internal volume is filled with a potting compound that is used to seal and protect the power semiconductor die and associated electrical connections. The power module assembly includes induction heatable particles disposed within a structure that is thermally coupled to the potting compound or within the potting compound itself. These induction heatable particles are used to rapidly heat the potting compound to accelerate a chemical reaction, such as causing the potting compound to cure and / or activating a chemical reaction of a tackifier in the potting compound. This greatly reduces the amount of time required to cure the potting compound.

[0012] refer to Figure 1A , depicts a semiconductor module 100 according to an embodiment. The semiconductor module 100 includes a bottom surface portion 101. Figure 1AIn an embodiment of the present invention, the semiconductor module 100 includes a substrate 103 forming a bottom portion 101. The substrate 103 can be formed of a thermally conductive material such as a metal, such as copper, aluminum, alloys thereof, etc. The semiconductor module 100 includes a housing 114, which surrounds an internal volume above the bottom portion 101. The housing 114 includes an outer sidewall 118, which is fixed to the bottom portion 101 by glue 120. The glue 120 can be any kind of electronic device adhesive, including polymer-based electronic device glue. Of course, the sidewall 118 can be fixed to the bottom portion 101 by other conventional methods, such as by using mechanical fasteners and sealing rings. The housing 114 can include a cover 115 extending above the internal volume, thereby allowing the housing 114 to form a complete seal of the internal volume. The cover 115 and the outer sidewall 118 can be integrally formed components of the same structure (as shown). Alternatively, the cover 115 can be a separate structure that can be attached to and from the outer sidewall 118.

[0013] The semiconductor module 100 also includes a power electronic device carrier 102 within the internal volume. The power electronic device carrier 102 includes a structured metallization layer 104 disposed on an electrically insulating substrate 106. The structured metallization layer 104 includes a plurality of pads, which are disposed on the electrically insulating substrate 106 and are electrically isolated from each other. The size of the pads is set to accommodate the installation of the semiconductor die 108 or passive components thereon. In addition, the pads can form part of an electrical interconnect structure that connects two or more devices together. The power electronic device carrier 102 also includes a second metallization layer 110, which is disposed on the back side of the power electronic device carrier 102. The first structured metallization layer 104 and the second metallization layer 110 may include or be plated with any one or more of Al, Cu, Ni, Ag, Au, Pd, Pt, NiV, NiP, NiNiP, NiP / Pd, Ni / Au, NiP / Pd / Au or NiP / Pd / Au / Ag. The second metallization layer 110 may be attached to the bottom portion 101 by adhesive, solder, sinter, etc. The semiconductor module 100 may be mounted on a cooling device such as a heat sink, wherein the power electronics carrier 102 and the bottom portion 101 together carry heat away from the power semiconductor die 108 .

[0014] According to an embodiment, the power electronic device carrier 102 is a direct copper bonding (DCB) substrate, a direct aluminum bonding (DAB) substrate, or an active metal brazing (AMB) substrate. The electrically insulating substrate 106 for each of these types of carriers may include a ceramic material, such as Al2O3 (aluminum oxide), AlN (aluminum nitride), etc. According to another embodiment, the power electronic device carrier 102 is an insulated metal substrate (IMS). The electrically insulating substrate 106 for the IMS substrate may include a filling material such as epoxy or polyimide. According to another embodiment, the power electronic device carrier 102 is a printed circuit board (PCB). In this case, the electrically insulating substrate 106 may include a resin material such as FR-4.

[0015] The semiconductor module 100 includes one or more power semiconductor dies 108 mounted on a power electronic device carrier 102 within the internal volume. The power semiconductor die 108 can be mechanically attached and (optionally) electrically connected to the structured pads of the structured metallization layer 104 by a conductive adhesive (e.g., solder, sinter, conductive glue, etc.). The term power semiconductor die 108 refers to a single device rated to accommodate a voltage of at least 100V (volts), more typically 600V, 1200V, 1700V, 3300V, 6500V or more and / or rated to accommodate a current of at least 1A, and more typically 10A, 50A, 100A, 200A or more. Examples of power semiconductor die 108 include discrete power diodes and discrete power transistor dies, such as MOSFET (metal oxide semiconductor field effect transistor), IGBT (insulated gate bipolar transistor) and HEMT (high electron mobility transistor), etc. Other types of devices, such as logic devices, custom circuits, controllers, sensing devices, passive components, etc., may be mounted on the power electronics carrier 102 alone or in combination.

[0016] According to an embodiment, the semiconductor module 100 is configured as a power converter or a power inverter. For example, the semiconductor module 100 may include one or more half-bridge circuits, wherein the power semiconductor die 108 may be a power transistor forming a high-side switch and a low-side switch of the half-bridge circuit. The semiconductor module 100 may additionally include one or more driver dies that control the switching operation of the half-bridge circuit.

[0017] The semiconductor module 100 may include a terminal 122 that extends through the housing 114 and is accessible from the outside from the upper side of the semiconductor module 100. The terminal 122 is a conductive structure that forms an external point of electrical contact with the device contained within the internal volume. The terminal 122 may be formed of a conductive material such as a metal, such as copper, aluminum, alloys thereof, etc. The terminal 122 may be disposed in different locations. For example, in other embodiments, the terminal 122 may be anchored within the outer sidewall 118 of the housing 114. The terminal 122 may have a variety of geometric configurations. For example, at least some of the terminals 122 may be configured as press-fit connectors.

[0018] The semiconductor module 100 includes an electrical interconnection element 124 for achieving electrical interconnection between the power semiconductor die 108 and the terminals 122. As shown, the electrical interconnection element 124 is configured as a conductive bonding wire. These bonding wires connect the terminals of the semiconductor die to the structured metallization layer 104, and connect the structured metal layer 104 to the terminals 122. More generally, the electrical interconnection element 124 can be any type of interconnection element, such as a clip, a ribbon, a bonding wire, a flexible circuit board, etc., attached to the device and / or metal pads of the semiconductor module 100 using any known technology. In addition, the semiconductor module 100 may include additional metal structures, such as a tab or busbar structure (not shown) that delivers a fixed voltage to various devices mounted on the power electronic device carrier 102.

[0019] The interior volume of the semiconductor module 100 is filled with a potting compound 126. The potting compound 126 is an electrically insulating sealing material that protects the power semiconductor die 108, the electrical interconnect elements 124, and the power electronic device carrier 102, and provides dielectric isolation of these elements. The potting compound 126 may include a matrix such as an epoxy, plastic, or silicone-based gel. The matrix may be mixed with a networking agent, which helps to form a three-dimensional network of interconnected polymer chains during the curing process, giving the cured gel its structural and mechanical properties. The potting compound 126 initially flows into the interior volume in a liquefied state, and is subsequently cured to crosslink the chemical bonds in the polymer with the networking agent. The curing process takes time and may include a heating step to accelerate the crosslinking reaction.

[0020] According to an embodiment, the encapsulation compound 126 includes a tackifier or a tackifier system. The tackifier is used to enhance adhesion to the inner surface of the semiconductor module 100 (e.g., the power electronic device carrier 102, the power semiconductor die 108, the housing, etc.). The tackifier is an additive mixed with the polymer matrix of the encapsulation compound. For example, the tackifier may include: a silane with a functional group; a polymer; or an organometallic compound, but of course may include other materials or a combination of different materials to connect the inner surface of the semiconductor module to the encapsulation compound. For example, the tackifier may account for no more than 1% of the volume of the encapsulation compound 126. The adhesion reaction is activated and / or accelerated by heating the heatable particles by induction. The tackifier can be activated by the same curing process that hardens the encapsulation compound 126.

[0021] The semiconductor module 100 includes induction heatable particles 123. The induction heatable particles 123 are conductive particles that can be heated using an induction heating process. Induction heating refers to a well-known technique by which an electrical conductor is subjected to a time-varying magnetic field, generating eddy currents in the electrical conductor, which in turn generates heat through Joule heating and hysteresis of the material. Although this technique can be used to heat all electrical conductors, certain materials are particularly suitable for induction heating. To this end, the induction heatable particles 123 can include magnetic materials, such as ferromagnetic, ferrimagnetic or superparamagnetic materials. Examples of ferromagnetic materials are iron, cobalt, nickel and their alloys or oxides. Ferrimagnetic materials are ferrites, i.e., iron oxides such as Fe2O3 and Fe3O4. Superparamagnetic particles are nanoparticles that exhibit magnetism when placed in a magnetic field, but lose these properties when the magnetic field is removed. These particles are typically composed of ferromagnetic or ferrimagnetic materials and typically have a size ranging from a few nanometers to a hundred nanometers. The induction heatable particles 123 can also include a coating of an electrically insulating material (e.g., SiO2).

[0022] exist Figure 1A In an embodiment of the present invention, the induction heatable particles 123 are incorporated into the potting compound 126. The induction heatable particles 123 can be dispersed throughout the volume of the potting compound 126 in a uniform or quasi-uniform distribution. The amount of the induction heatable particles 123 can be any amount that maintains the electrical insulating properties of the potting compound 126. That is, the volume percentage of the induction heatable particles 123 can be selected to be below the percolation threshold of the potting compound 126. For example, the potting compound 126 can include up to 16% by volume of the induction heatable particles 123, or even higher in some cases. The potting compound can contain as little as 0.01% by volume of the induction heatable particles, or even lower, particularly if superparamagnetic particles are used.

[0023] According to an embodiment, the induction heatable particles 123 are used as part of a glue curing process for heating the glue 120. That is, the glue is cured by induction heating the induction heatable particles 123. Similar to the potting compound 126, the glue curing process may require a combination of time and temperature to cause cross-linking of the polymers and form a stable, secure bond. This avoids the need for other types of glue curing steps (such as providing a circulating air oven and / or hot plate under the bottom portion 101, and / or applying infrared light).

[0024] According to the depicted embodiment, the induction heatable particles 123 are incorporated into the glue 120 itself. Thus, the induction heatable particles 123 can be used to directly heat the glue 120. Alternatively, the induction heatable particles 123 can be disposed within another element that is thermally coupled to the glue 120.

[0025] According to an embodiment, the induction heatable plate is thermally coupled to the potting compound 126, and the curing process includes induction heating the induction heatable plate and the induction heatable particles 123. That is, the combination of the induction heatable particles 123 and the separate induction heatable plate are used together to quickly cure the potting compound. Figure 1A In the embodiment of the present invention, the induction heatable plate can correspond to the substrate or base plate 103 forming the bottom portion 101. For example, the base plate 103 can include ferrous and / or ferrimagnetic materials. The plate can also be coated with induction heatable materials, such as those materials that constitute the induction heatable particles.

[0026] refer to Figure 1B , the housing 114 may be configured with inner walls 119 that divide the inner volume into a plurality of compartments 121. Each of the inner walls 119 may be glued to the bottom portion, each compartment 121 containing one of the components of the power electronic device carrier 102 and the power semiconductor die 108 mounted thereon. Each compartment 121 may include a volume of potting compound 126 in which induction heatable particles 123 are mixed.

[0027] refer to Figure 2 , shows a semiconductor module 100 according to another embodiment. Figure 1AThe embodiment of the invention is substantially similar, except that the power electronics carrier 102 forms the bottom surface portion 101 of the semiconductor module 100. That is, the metal substrate 103 is omitted and the housing 118 is glued directly to the power electronics carrier 102. In embodiments where a separate induction heatable plate is used together with the induction heatable particles 123 to heat the adhesion promoter to its activation temperature, the induction heatable plate may be provided by a separate carrier 125 in contact with the bottom surface portion 101. The carrier 125 may include ferrous and / or ferrimagnetic materials. If the power electronics carrier 102 itself is a commercially available device that cannot be configured as an induction heatable structure, the separate carrier 125 may be required.

[0028] refer to Figure 3A , shows a semiconductor module 100 according to another embodiment. In this embodiment, induction heatable particles 123 are disposed within the housing 114. Thus, unlike the previous embodiment, the induction heatable particles 123 are disposed outside the potting compound 126. In this case, the plastic material forming the outer sidewall 118 includes the induction heatable particles 123 incorporated therein. The induction heatable particles 123 may be disposed throughout the plastic material in a uniform or quasi-uniform distribution. In a manner similar to that described above, the percentage of the induction heatable particles 123 may be any amount up to the percolation threshold of the material, so that the housing 114 remains an electrical insulator. As shown, the induction heatable particles 123 may be disposed throughout the housing 114. Alternatively, the induction heatable particles 123 may be omitted from the cover portion 115 and disposed only within the outer sidewall 118. The induction heatable particles 123 within the housing 114 may be inductively heated as described above, except that the heat is transferred to the potting compound 126 through the housing 114.

[0029] refer to Figure 3B , the housing 114 can be configured such that the outer sidewall 118 and each inner wall 119 include induction heatable particles 123 incorporated therein. This arrangement provides induction heatable particles 123 surrounding each compartment 121. In this manner, the induction heating source is interwoven throughout the potting compound 126. Since the potting compound 126 is a thermal insulator, this arrangement allows for faster and more uniform heating of the material.

[0030] refer to Figure 4A, shows a semiconductor module 100 according to another embodiment. In this embodiment, the semiconductor module 100 includes a passive heatable structure 127, which is arranged along the inner surface of the housing 114 and includes induction heatable particles 123. The housing 114 itself can be a plastic structure without induction heatable particles 123. The passive heatable structure 127 can include an electrically insulating substrate, such as plastic, rubber, epoxy, glass, etc., wherein the induction heatable particles 123 are arranged in a uniform or quasi-uniform distribution throughout the material. In a similar manner to the above, the percentage of induction heatable particles 123 can be any amount up to the percolation threshold of the material, so that the passive heatable structure 127 remains an electrical insulator. According to an embodiment, the passive heatable structure 127 is a molded structure formed by a molding technique (e.g., injection molding, compression molding, transfer molding, etc.). The induction heatable particles 123 can be dispersed throughout the polymer matrix of the molding compound forming the molded structure.

[0031] The passive heatable structure 127 may be secured to the housing 114 in any of a number of different ways. For example, it may be molded directly onto the housing 114 via a 2K or two-shot process. In this process, the housing 114 may be injection molded first, and then the passive heatable structure 127 would be injection molded into the cavity of the mold containing the fully molded housing 114. Of course, the passive heatable structure 127 may also be molded separately and then subsequently secured to the housing 114, for example using an adhesive.

[0032] refer to Figure 4B , passively heatable structures 127 may be provided along each outer side wall 118 and each inner wall 119. This arrangement provides for induction heatable particles 123 around each compartment 121 in a similar manner as described above.

[0033] refer to Figure 5 , shows a semiconductor module 100 according to another embodiment. In this embodiment, the semiconductor module 100 includes a passively heatable structure 127, which is arranged along the inner surface of the housing 114 and includes induction heatable particles 123. In this case, the passively heatable structure 127 is arranged as a layer of material lining all or part of the inner surface of the housing 114. There may be parts in the housing 114 that should not be covered by the passively heatable structure 127, for example, where there are terminals that must be welded or brazed. The coating can also be applied to other parts of the module as long as the coating does not interfere with the operation of the module components. According to an embodiment, the layer is provided by spraying the inner surface of the housing 114 with an electrically insulating material, which includes a concentration of induction heatable particles 123. In a similar manner to that described above, the percentage of induction heatable particles 123 can be any amount up to the percolation threshold of the material so that the passively heatable structure 127 remains an electrical insulator.

[0034] Although the present disclosure is not limited in this regard, the following numbered examples demonstrate one or more aspects of the present disclosure.

[0035] Example 1. A method of producing a semiconductor module, the method comprising: providing a power module assembly, the power module assembly comprising a bottom portion, a housing, and a power semiconductor die, the housing enclosing an internal volume above the bottom portion, the power semiconductor die being mounted to a power electronics carrier within the internal volume; filling the internal volume with a potting compound; providing inductively heatable particles within the power module assembly; and inductively heating the inductively heatable particles to activate and / or accelerate a chemical reaction in the semiconductor module.

[0036] Example 2. The method of Example 1, wherein the induction heatable particles comprise magnetic particles.

[0037] Example 3. The method of Example 1, further comprising providing an induction heatable plate thermally coupled to the potting compound, wherein the induction heatable plate comprises the induction heatable particles.

[0038] Example 4. The method of Example 3, wherein the induction heatable plate is a substrate forming the bottom surface portion.

[0039] Example 5. The method of Example 3, wherein the power electronics carrier forms the bottom surface portion, and wherein the induction heatable plate is a carrier in contact with the bottom surface portion.

[0040] Example 6. The method of Example 1, wherein providing the assembly includes providing glue between the outer sidewall of the housing and the bottom portion, and wherein the method includes performing a glue curing process of heating the glue, and wherein performing the glue curing process includes inductively heating the induction heatable particles to heat the glue.

[0041] Example 7. The method of Example 6, wherein providing induction heatable particles within the power module assembly comprises incorporating the induction heatable particles into the glue.

[0042] Example 8. The method of Example 1, wherein providing induction heatable particles within the power module assembly comprises incorporating the induction heatable particles into the potting compound, and the chemical reaction cures the potting compound.

[0043] Example 9. The method of Example 1, wherein providing induction heatable particles within the power module assembly comprises incorporating the induction heatable particles into the potting compound, and the chemical reaction activates an adhesion promoter in the potting compound.

[0044] Example 10. The method of Example 1, wherein providing induction heatable particles within the power module assembly comprises incorporating the induction heatable particles along or within the housing.

[0045] Example 11. The method of Example 10, wherein the housing includes an inner wall that divides the interior volume into a plurality of compartments, and wherein incorporating the induction heatable particles along or within the housing includes incorporating the induction heatable particles along or within the inner wall.

[0046] Example 12. The method of Example 1, wherein incorporating the induction heatable particles along or within the shell comprises forming a passively heatable structure disposed along an inner surface of the shell and comprising the induction heatable particles.

[0047] Example 13. The method of Example 10, wherein incorporating the induction heatable particles along or within the shell comprises spraying the inner surface of the shell with a material comprising a concentration of the induction heatable particles.

[0048] Example 14. The method of Example 12, incorporating the induction heatable particles along or within the shell comprises injection molding a structure comprising a concentration of the induction heatable particles.

[0049] Example 15. A semiconductor module comprises: a bottom portion; a housing enclosing an interior volume above the bottom portion; a power semiconductor die mounted to a power electronic device carrier within the interior volume; a potting compound within the interior volume; and inductively heatable particles, wherein the inductively heatable particles are within the potting compound or within a structure thermally coupled to the potting compound.

[0050] Example 16. The semiconductor module of Example 15, wherein the induction heatable particles include magnetic particles.

[0051] Example 17. The semiconductor module of Example 16, wherein the magnetic nanoparticles include any one of the following: ferromagnetic particles; ferrimagnetic particles; and superparamagnetic particles.

[0052] Example 18. The semiconductor module of Example 15, further comprising an induction heatable plate thermally coupled to the potting compound.

[0053] Example 19. The semiconductor module of Example 15, wherein the induction heatable particles are incorporated into the potting compound.

[0054] Example 20. The semiconductor module of Example 15, wherein the induction heatable particles are disposed along or within the housing.

[0055] The semiconductor die disclosed herein can be formed with a variety of device technologies utilizing a variety of semiconductor materials. Examples of such materials include, but are not limited to, elemental semiconductor materials such as silicon (Si) or germanium (Ge), Group IV compound semiconductor materials such as silicon carbide (SiC) or silicon germanium (SiGe), binary, ternary, or quaternary III-V semiconductor materials such as gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), indium gallium phosphide (InGaP), aluminum gallium nitride (AlGaN), aluminum indium nitride (AlInN), indium gallium nitride (InGaN), aluminum gallium indium nitride (AlGaInN), or indium gallium arsenic phosphide (InGaAsP), and the like.

[0056] The semiconductor die disclosed herein can be configured as a vertical device, which refers to a device that conducts a load current between the oppositely facing main surface and the back surface of the die. Alternatively, the semiconductor die can be configured as a lateral device, which refers to a device that conducts a load current parallel to the main surface of the die.

[0057] For ease of description, spatially relative terms such as "under", "below", "lower", "above", "upper", etc. are used to explain the positioning of one element relative to a second element. These terms are intended to cover different orientations of the device in addition to the orientation that is different from that depicted in the figure. In addition, terms such as "first", "second", etc. are also used to describe various elements, regions, parts, etc., and are not intended to be limiting. Throughout the description, similar terms refer to similar elements.

[0058] As used herein, the terms "having," "containing," "including," "comprising," and the like are open-ended terms that indicate the presence of stated elements or features, but do not preclude additional elements or features. Unless the context clearly indicates otherwise, the words "a," "an," and "the" are intended to include the plural as well as the singular.

[0059] In view of the above range of variations and applications, it should be understood that the present invention is not limited by the foregoing description, nor by the accompanying drawings. Instead, the present invention is limited only by the following examples and their legal equivalents.

Claims

1. A method for producing a semiconductor module, the method comprising: Providing a power module assembly, the power module assembly comprising a bottom portion, a housing, and a power semiconductor die, the housing enclosing an internal volume above the bottom portion, the power semiconductor die being mounted to a power electronic device carrier within the internal volume; filling the interior volume with a potting compound; providing induction heatable particles within the power module assembly; as well as The induction heatable particles are inductively heated to activate and / or accelerate chemical reactions in the semiconductor module.

2. The method according to claim 1, wherein: The induction heatable particles include magnetic nanoparticles.

3. The method of claim 1 further comprising providing an induction heatable plate thermally coupled to the potting compound, wherein: The induction heatable plate comprises the induction heatable particles.

4. The method according to claim 3, wherein: The induction heatable plate is a metal substrate forming the bottom surface portion.

5. The method according to claim 3, wherein: The power electronics carrier forms the bottom surface portion, and wherein the induction heatable plate is a carrier in contact with the bottom surface portion.

6. The method according to claim 1, wherein: Providing the power module assembly includes providing glue between the outer sidewall of the housing and the bottom portion, and wherein the chemical reaction accelerates curing of the glue.

7. The method according to claim 6, wherein: Providing induction heatable particles within the power module assembly includes incorporating the induction heatable particles into the glue.

8. The method according to claim 1, wherein: Providing induction heatable particles within the power module assembly includes incorporating the induction heatable particles into the potting compound, and the chemical reaction cures the potting compound.

9. The method according to claim 1, wherein: Providing induction heatable particles within the power module assembly includes incorporating the induction heatable particles into the potting compound, and the chemical reaction activates an adhesion promoter in the potting compound.

10. The method according to claim 1, wherein: Providing induction heatable particles within the power module assembly includes incorporating the induction heatable particles along or within the housing.

11. The method according to claim 10, wherein: The outer shell includes an inner wall that divides the interior volume into a plurality of compartments, and wherein incorporating the induction heatable particles along or within the outer shell includes incorporating the induction heatable particles along or within the inner wall.

12. The method according to claim 1, wherein: Incorporating the induction heatable particles along or within the shell includes forming a passively heatable structure disposed along an interior surface of the shell and including the induction heatable particles.

13. The method according to claim 12, wherein: Incorporating the induction heatable particles along or within the shell includes spraying the interior surface of the shell with a material including a concentration of the induction heatable particles.

14. The method according to claim 12, wherein: Incorporating the induction heatable particles along or within the shell includes injection molding a structure including a concentration of the induction heatable particles.

15. A semiconductor module, comprising: bottom part; an outer shell enclosing an interior volume above the bottom portion; a power semiconductor die mounted to a power electronics carrier within said interior volume; a potting compound within the interior volume; as well as Induction heats particles. Wherein, the induction heatable particles are either within the potting compound or within a structure thermally coupled to the potting compound.

16. The semiconductor module according to claim 15, wherein: The induction heatable particles include magnetic particles.

17. The semiconductor module according to claim 16, wherein: The magnetic particles include any one of the following: ferromagnetic particles; ferrimagnetic particles; and Superparamagnetic particles.

18. The semiconductor module of claim 15, further comprising an induction heatable plate thermally coupled to the potting compound.

19. The semiconductor module according to claim 15, wherein: The induction heatable particles are incorporated into the potting compound.

20. The semiconductor module according to claim 15, wherein The induction heatable particles are disposed along or within the housing.

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