A high-speed, high-power single-pole double-throw microwave switch and communication equipment
By introducing a bias module plus a small resistor design into the single-pole double-throw microwave switch, the problems of high insertion loss, poor signal isolation and slow response speed when running at high power are solved, faster switching and lower power loss are achieved, and the stability and reliability of the system are improved.
Patent Information
- Application Number
- CN202510171611.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-17
- Publication Date
- 2025-04-25
- Estimated Expiration
- 2045-02-17
AI Technical Summary
When traditional single-pole double-throw microwave switches operate at high power, there are problems such as high insertion loss, poor signal isolation and slow response speed, and it is difficult to achieve on and off in a very short time, and insufficient control accuracy and stability, resulting in unreliable operation.
A high-speed, high-power single-pole double-throw microwave switch is designed, using a common port and two sets of mirror circuit structures, and a bias module plus a small resistor instead of the traditional large resistor design, so as to achieve accurate gate voltage control through a common source and common drain FET tube configuration.
This design reduces the circuit board pattern area, achieves faster switching and lower power loss, improves switching efficiency and speed, enhances signal isolation in a stable state, reduces device stress and transient voltage spikes, and improves system stability and reliability.
Smart Images
Figure CN119627381B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of single-pole double-throw microwave switches, in particular to a high-speed and high-power single-pole double-throw microwave switch and communication equipment. Background Art
[0002] Microwave switches are one of the key components in high-frequency wireless communications and radar systems. Traditional single-pole double-throw microwave switches face problems such as high insertion loss, poor signal isolation, and slow response when operating at high power. In addition, due to the need for high-speed signal processing, the switch needs to be turned on and off in a very short time, but traditional bias circuits often have difficulty providing sufficient control accuracy and stability, resulting in unreliable operation. Especially in dynamic environments, the system must maintain high signal integrity and reduce power loss to improve overall performance and equipment life.
[0003] The above information disclosed in this Background section is only for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not constitute the prior art that is already known to one of ordinary skill in the art. Summary of the invention
[0004] The object of the present invention is to provide a high-speed, high-power single-pole double-throw microwave switch and a communication device to solve the problems raised in the above-mentioned background technology.
[0005] To achieve the above object, the present invention provides the following technical solutions:
[0006] A high-speed, high-power single-pole double-throw microwave switch, comprising: a common port and two sets of mirror loops;
[0007] The mirror loop includes a radio frequency port, a series-parallel module, a control port, and a bias module, wherein:
[0008] The series-parallel modules are electrically connected between the radio frequency port and the common port. One end of the series-parallel modules in the two mirror loops is electrically connected to the corresponding radio frequency port, and the other end is electrically connected to each other.
[0009] The bias module includes a first bias unit, a second bias unit, and a third bias unit, wherein the first bias unit is electrically connected to the control port, and the second bias unit and the third bias unit are both electrically connected to the series-parallel module;
[0010] The first bias unit, the second bias unit and the third bias unit are all composed of two FET tubes with a common source and a common drain.
[0011] Preferably, the series-parallel module includes a first transistor, a second transistor and a third transistor, the source and drain of the first transistor are respectively electrically connected between the RF port and the common port, the second transistor and the third transistor are connected in parallel with each other, the drains are both electrically connected between the RF port and the first transistor, and the sources are both grounded.
[0012] Preferably, resistors are electrically connected between the source of the first transistor and the drain of the second transistor, between the drain of the second transistor and the drain of the third transistor, and between the drain of the third transistor and the radio frequency port.
[0013] Preferably, the sources of the first transistors of the two mirror loops are electrically connected to each other, the common port is connected in series with a resistor, and the other end of the resistor is electrically connected between the sources of the first transistors of the two mirror loops.
[0014] Preferably, the source and drain of the two FET tubes of the first bias unit, the second bias unit and the third bias unit are electrically connected to each other, the gate of one FET tube is electrically connected to the source of the two FET tubes, serving as the first port of the bias unit, and the gate of the other FET tube is electrically connected to the drain of the two FET tubes, serving as the second port of the bias unit.
[0015] Preferably, the first port of the first bias unit is electrically connected to the control port, and the second port of the first bias unit is electrically connected to the gate of the first transistor after being connected in series with a resistor;
[0016] The first port of the second bias unit is electrically connected to the first port of the third bias unit, and the second port of the second bias unit is electrically connected to the gate of the second transistor after being connected in series with a resistor;
[0017] The first port of the third bias unit is electrically connected to the control port of another group of mirror units, and the second port of the third bias unit is electrically connected to the gate of the third transistor after being connected in series with a resistor.
[0018] Preferably, the resistance of the resistors connected in series to the second ports of the first bias unit, the second bias unit and the third bias unit has a resistance range of 50-10KΩ.
[0019] Preferably, the two groups of mirror loops are symmetrically arranged, and the control port is used to control the switching of the first transistor, the second transistor, and the third transistor to control the switching of the two groups of mirror loops as a whole.
[0020] Preferably, when the mirror loop as a whole is in an on or off state, the first bias unit, the second bias unit, and the third bias unit in the bias module are all in a high-resistance state; when the mirror loop as a whole is in a state of switching between on and off, the first bias unit, the second bias unit, and the third bias unit in the bias module are all in a low-resistance state.
[0021] A communication device adopts the high-speed and high-power single-pole double-throw microwave switch.
[0022] Compared with the prior art, the present invention has the following beneficial effects:
[0023] The present invention introduces a bias module plus a small resistor to replace the large resistor design in the traditional solution, which can not only reduce the overall area of the circuit board diagram, but also can achieve more accurate gate voltage control due to the module using a common source and common drain FET tube configuration, thereby optimizing the on and off states of the switch. Through this design, the bias module provides a low resistance state when the switch is switched, can respond quickly and reduce power loss, and improves the overall switching efficiency and speed. In a stable state, the bias module is in a high resistance state, which effectively enhances signal isolation, while reducing device stress and transient voltage spikes, and greatly improves the stability and reliability of the system. This design not only solves the problems of system response speed, signal integrity and system power consumption, but also prolongs the service life of the system, and is suitable for applications requiring high power and high frequency signal processing. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 It is a schematic diagram of the circuit structure of the present invention;
[0025] Figure 2 is a switching time diagram of a single-pole double-throw microwave switch in the prior art;
[0026] Figure 3 This is a switching time diagram of the present invention.
[0027] In the figure: 1, common port; 2, RF port; 3, control port; 41, first bias unit; 42, second bias unit; 43, third bias unit. DETAILED DESCRIPTION
[0028] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments.
[0029] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the present invention should be understood by people with ordinary skills in the field to which the present invention belongs. The words "first", "second" and similar words used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0030] Example:
[0031] See also Figure 1~Figure 3 , the present invention provides a technical solution:
[0032] A high-speed, high-power single-pole double-throw microwave switch, comprising: a common port P1 and two sets of mirror loops;
[0033] The mirror loop includes the RF port P2, the series-parallel module, the control port P3, and the bias module, among which:
[0034] In this embodiment, all FET tubes are MOSFETs.
[0035] The series-parallel module is electrically connected between the RF port and the common port. The series-parallel modules in the two groups of mirror loops have one end electrically connected to the corresponding RF port and the other end electrically connected to each other. The series-parallel module includes a first transistor Q1, a second transistor Q2 and a third transistor Q3. The source and drain of the first transistor are electrically connected between the RF port and the common port respectively. The second transistor and the third transistor are connected in parallel with each other, and the drains are electrically connected between the RF port and the first transistor. The sources are grounded. Resistors R1 are electrically connected between the source of the first transistor and the drain of the second transistor, between the drain of the second transistor and the drain of the third transistor, and between the drain of the third transistor and the RF port. The sources of the first transistors of the two groups of mirror loops are electrically connected to each other. A resistor R2 is connected in series with the common port, and the other end of the resistor is electrically connected between the sources of the first transistors of the two groups of mirror loops.
[0036] The use of multiple transistors (first, second, and third transistors) in a series-parallel configuration can achieve an effective balance between signal transmission and isolation. Specifically, the first transistor is directly connected between the RF port and the common port, responsible for the main signal transmission path, and helps to achieve low insertion loss. The parallel configuration of the second and third transistors enhances the power handling capability of the switch, allowing the signal to operate in a high-power state without losing performance, while the parallel configuration of the second and third transistors can evenly distribute the current and power load, reduce the burden of a single transistor, and provide additional control and adjustment capabilities, allowing precise adjustment of the on and off states of the switch, and when a channel is closed, the parallel transistors of the remaining channels provide additional isolation to prevent signal leakage. Therefore, this combination of multiple transistors allows for more flexible biasing and control responses, allowing the switch to operate faster and more reliably in dynamic environments (such as RF switching).
[0037] The bias module includes a first bias unit, a second bias unit, and a third bias unit. The first bias unit is electrically connected to the control port, and the second bias unit and the third bias unit are both electrically connected to the series-parallel module. The first bias unit, the second bias unit, and the third bias unit are all composed of two MOS tubes Q4 and Q5 with a common source and a common drain. The source and drain of the two MOS tubes of the first bias unit, the second bias unit, and the third bias unit are electrically connected to each other, and the gate of one MOS tube is electrically connected to the source of the two MOS tubes as the first port of the bias unit, and the gate of the other MOS tube is electrically connected to the drain of the two MOS tubes as the second port of the bias unit. The first port of the first bias unit is electrically connected to the control port, and the second port of the first bias unit is electrically connected to the gate of the first transistor after being connected in series with a resistor R3.
[0038] The first port of the second bias unit is electrically connected to the first port of the third bias unit, and the second port of the second bias unit is electrically connected to the gate of the second transistor after being connected in series with a resistor;
[0039] The first port of the third bias unit is electrically connected to the control port of another group of mirror units, and the second port of the third bias unit is electrically connected to the gate of the third transistor after being connected in series with a resistor.
[0040] The resistance value range of the resistors connected in series to the second ports of the first bias unit, the second bias unit and the third bias unit is 50-10KΩ.
[0041] The two mirror loops are symmetrically arranged, and the control port is used to control the switches of the first transistor, the second transistor, and the third transistor to control the switches of the two mirror loops as a whole. When the mirror loop is in an on or off state as a whole, the first bias unit, the second bias unit, and the third bias unit in the bias module are all in a high-impedance state; when the mirror loop is in a state of switching between on and off as a whole, the first bias unit, the second bias unit, and the third bias unit in the bias module are all in a low-impedance state.
[0042] Here, each bias unit is composed of two MOS tubes with a common source and a common drain, and the resistor connected in series to the second port of the bias unit is a small resistor with a small resistance value. This combination of bias unit and small resistor not only has a smaller circuit layout area than the prior art, but also can provide precise voltage control capability, can effectively control the gate voltage of the transistor, thereby optimizing the on and off performance of the switch, and through the configuration of the common source and common drain MOS tube, the bias unit can provide a stable current transmission path, reduce power loss, improve switching efficiency, achieve faster on and off, and improve the response speed of the switch. At the same time, it can also effectively reduce the transient voltage spike caused by the gate capacitance, which not only improves the signal integrity and system stability, but also greatly reduces the stress and heating problems of the device, and improves the reliability and service life of the switch.
[0043] Figure 2 Figure 3 In the figure, the image with the rising edge generated first represents the waveform of the control voltage loaded on the gate, and the image with the rising edge generated later represents the waveform of the output voltage after the single-pole double-throw switch is turned on. The horizontal axis represents time in ns, and the vertical axis represents the voltage value in V. The control voltage is referenced to the vertical axis on the right, and the output voltage is referenced to the vertical axis on the left, that is, the control voltage is applied first, and then the output voltage is generated, and there is a certain delay between the two. Figure 2 and Figure 3 It can be seen that the switching time of the single-pole double-throw microwave switch in the prior art is 8ns on the rising edge and 4ns on the falling edge, while the switching time of the single-pole double-throw microwave switch in the present invention is 2ns on the rising edge and 1ns on the falling edge. Compared with the prior art, the switch switching time is reduced by 75%, which effectively reduces the switch switching time.
[0044] The present invention also provides a communication device, which adopts the high-speed and high-power single-pole double-throw microwave switch.
[0045] In summary, the present invention introduces a bias module plus a small resistor to replace the large resistor design in the traditional solution, which can not only reduce the overall area of the circuit board diagram, but also because the module uses a common source and common drain MOS tube configuration, it can also achieve more accurate gate voltage control, which plays a role in optimizing the switch on and off state. Through this design, the bias module provides a low resistance state when the switch is switched, which can respond quickly and reduce power loss, thereby improving the overall switching efficiency and speed. In a stable state, the bias module is in a high resistance state, which effectively enhances the signal isolation, while reducing device stress and transient voltage spikes, and greatly improving the stability and reliability of the system. This design not only solves the problems of system response speed, signal integrity and system power consumption, but also prolongs the service life of the system, and is suitable for applications requiring high power and high frequency signal processing.
[0046] The above formulas are all dimensionless and numerical calculations. The formula is a formula for the most recent real situation obtained by collecting a large amount of data and performing software simulation. The preset parameters in the formula are set by technicians in this field according to actual conditions.
[0047] The above embodiments may be implemented in whole or in part by software, hardware, firmware or any other combination thereof. When implemented by software, the above embodiments may be implemented in whole or in part in the form of a computer program product. Those skilled in the art may appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein may be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed by hardware or software methods depends on the specific application and design constraints of the technical solution.
[0048] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, and may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
[0049] The above description is only a specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application.
Claims
1. A high-speed, high-power single-pole double-throw microwave switch, characterized in that: include: Common port and two sets of mirror loops; The mirror loop includes a radio frequency port, a series-parallel module, a control port, and a bias module, wherein: The series-parallel modules are electrically connected between the radio frequency port and the common port. One end of the series-parallel modules in the two mirror loops is electrically connected to the corresponding radio frequency port, and the other end is electrically connected to each other. The bias module includes a first bias unit, a second bias unit, and a third bias unit, wherein the first bias unit is electrically connected to the control port, and the second bias unit and the third bias unit are both electrically connected to the series-parallel module; The first bias unit, the second bias unit and the third bias unit are all composed of two FET tubes with a common source and a common drain.
2. A high-speed, high-power single-pole double-throw microwave switch according to claim 1, characterized in that: The series-parallel module includes a first transistor, a second transistor and a third transistor, the source and drain of the first transistor are electrically connected between the RF port and the common port respectively, the second transistor and the third transistor are connected in parallel with each other, the drains are electrically connected between the RF port and the first transistor, and the sources are grounded.
3. A high-speed, high-power single-pole double-throw microwave switch according to claim 2, characterized in that: Resistors are electrically connected between the source of the first transistor and the drain of the second transistor, between the drain of the second transistor and the drain of the third transistor, and between the drain of the third transistor and the radio frequency port.
4. A high-speed, high-power single-pole double-throw microwave switch according to claim 2, characterized in that: The sources of the first transistors of the two mirror loops are electrically connected to each other, and a resistor is connected in series to the common port, and the other end of the resistor is electrically connected between the sources of the first transistors of the two mirror loops.
5. A high-speed, high-power single-pole double-throw microwave switch according to claim 1, characterized in that: The sources and drains of the two FET tubes of the first bias unit, the second bias unit, and the third bias unit are electrically connected to each other, the gate of one FET tube is electrically connected to the sources of the two FET tubes, serving as the first port of the bias unit, and the gate of another FET tube is electrically connected to the drain of the two FET tubes, serving as the second port of the bias unit.
6. A high-speed, high-power single-pole double-throw microwave switch according to claim 5, characterized in that: The first port of the first bias unit is electrically connected to the control port, and the second port of the first bias unit is electrically connected to the gate of the first transistor after being connected in series with a resistor; The first port of the second bias unit is electrically connected to the first port of the third bias unit, and the second port of the second bias unit is electrically connected to the gate of the second transistor after being connected in series with a resistor; The first port of the third bias unit is electrically connected to the control port of another group of mirror units, and the second port of the third bias unit is electrically connected to the gate of the third transistor after being connected in series with a resistor.
7. A high-speed, high-power single-pole double-throw microwave switch according to claim 6, characterized in that: The resistance value range of the resistors connected in series to the second ports of the first bias unit, the second bias unit and the third bias unit is 50-10KΩ.
8. The high-speed, high-power single-pole double-throw microwave switch according to claim 1, characterized in that: The two mirror loops are symmetrically arranged, and the control port is used to control the switching of the first transistor, the second transistor, and the third transistor to control the switching of the two mirror loops as a whole.
9. A high-speed, high-power single-pole double-throw microwave switch according to claim 8, characterized in that: When the mirror loop is in an on or off state as a whole, the first bias unit, the second bias unit, and the third bias unit in the bias module are all in a high-resistance state; when the mirror loop is in a state of switching between on and off as a whole, the first bias unit, the second bias unit, and the third bias unit in the bias module are all in a low-resistance state.
10. A communication device, characterized in that: The communication device adopts the high-speed, high-power single-pole double-throw microwave switch as described in any one of claims 1-9.
Citation Information
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