A wideband power amplifier based on transformer coupling

Abstract

The application discloses a kind of wideband power amplifiers based on transformer coupling, it is related to the technical field of radio frequency integrated circuit, and the matching network based on transformer coupling effectively expands the working bandwidth of power amplifier.The proposed wideband power amplifier adopts two-stage structure, both stages adopt pseudo-differential cascode structure, the driving stage adopts neutralizing capacitor technology to improve circuit stability, the power stage adopts thick gate transistor to improve gain, the input matching adopts the way that common-source stage gate inductance is coupled with common-gate common-source stage interstage inductance and common-source stage parallel inductance respectively, and the interstage and output broadband matching is realized through magnetic coupling resonant cavity structure, so as to realize the performance of wideband high gain of power amplifier.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of radio frequency integrated circuits, and particularly relates to a wideband power amplifier based on transformer coupling. BACKGROUND

[0002] Power amplifier is an important component of transmitter, and its related technology is one of the research focuses in recent years. There are usually multiple methods to realize wideband power amplifier, such as current multiplexing technology combined with resistance feedback, frequency interleaving technology and bandwidth expansion technology based on transformer coupling. The current multiplexing technology has simple structure, but the additional inductance increases the chip area; the frequency interleaving technology has good gain flatness and flexible design, but usually at the cost of gain and efficiency; the bandwidth expansion technology based on transformer coupling has two basic structures of magnetic coupling resonant cavity structure and traditional inductive coupling structure, the former can not only realize wideband matching, but also realize single-ended and double-ended conversion; the latter has multiple implementation forms to effectively expand the bandwidth, such as the coupling of gate and source inductance, the coupling of source and drain inductance, etc.

[0003] The existing wideband power amplifier is usually designed based on the bandwidth expansion technology of transformer coupling, and the introduction of multiple inductive coupling to form the input matching network is relatively less, and on this basis, it is of great significance to study multiple forms of inductive coupling to further improve the gain and expand the working bandwidth. SUMMARY

[0004] The purpose of the present application is to provide a design scheme of a wideband power amplifier based on CMOS process to further improve the gain of the power amplifier and expand the working bandwidth. The process used is TSMC 40nm CMOS, which has the advantages of high integration and low cost compared with compound semiconductors (GaN, GaAs, etc.).

[0005] To solve the above technical problems, the specific technical scheme of the present application is as follows:

[0006] A wideband power amplifier based on transformer coupling realizes input matching by means of common-source gate inductance and common-gate common-source inductance coupling, and realizes inter-stage matching and output matching by means of magnetic coupling resonant cavity structure, and the schematic diagram of the circuit is shown in Figure 1 Specifically, it includes an input matching network, a driving stage circuit, an inter-stage matching network, a power stage circuit and an output matching network; the driving stage circuit and the power stage circuit are cascaded; the output of the input matching network is connected to the input of the common-source transistor in the driving stage circuit, the output of the driving stage circuit is connected to one end of the inter-stage matching network, the other end of the inter-stage matching network is connected to the input of the common-source transistor in the power stage circuit, and the output of the power stage circuit is connected to the output matching network.

[0007] Further, the input matching network adopts a differential symmetric structure, one half of which contains a blocking capacitor C P1 , a parallel resistor R P , a series capacitor C P2 , inductances L P1 and L P2 in a weakly coupled transformer TR1, and inductances L P2 and L P3 in a weakly coupled transformer TR2; one end of the blocking capacitor C P1 is connected to the positive end of the input differential signal, and the other end is connected to one end of the series capacitor C P2 and one end of the parallel resistor R P , the other ends of the series capacitor C P2 and the parallel resistor R P are respectively connected to one end of the inductance L P2 and one end of the inductance L P1 in the transformer TR1, the other end of the inductance L P2 is connected to the gate of a common-source transistor M 1SP , one end of a middle capacitor C NN and one end of a bias resistor R 1BSP , the other end of the inductance L P1 is connected to one end of the inductance L N1 , one end of the inductance L P3 in the transformer TR2 is connected to the drain of the common-source transistor M 1SP , and the other end is connected to the source of a common-gate transistor M 1GP ; the other half contains a blocking capacitor C N1 , a parallel resistor R N , a series capacitor C N2 , inductances L N1 and L N2 in a weakly coupled transformer TR1, and inductances L N2 and L N3 in a weakly coupled transformer TR2; one end of the blocking capacitor C N1 is connected to the negative end of the input differential signal, and the other end is connected to one end of the series capacitor C N2 and one end of the parallel resistor R N , the other ends of the series capacitor C N2 and the parallel resistor R N are respectively connected to one end of the inductance L N2 and one end of the inductance L N1 in the transformer TR1, the other end of the inductance L N2 is connected to the gate of a common-source transistor M 1SN , one end of a middle capacitor C NP and one end of a bias resistor R 1BSN , the other end of the inductance L N1 is connected to one end of the inductance LP1 one end of the inductor L N3 of the transformer TR2, the other end of the bias resistor R 1SN is connected to the drain of the common-gate transistor M 1GN , and the source of the common-gate transistor M

[0008] Further, the driver stage circuit adopts a pseudo-differential structure, one half of which comprises a common-source transistor M 1SP , a common-gate transistor M 1GP , a bias resistor R 1BSP and a neutralizing capacitor C NP ; the gate of the common-source transistor M 1SP is connected to one end of the bias resistor R 1BSP , one end of the neutralizing capacitor C NN and one end of the inductor L P2 in the transformer TR2, the other end of the bias resistor R 1BSP is connected to the gate voltage V BS1 , the source of the common-gate transistor M 1SP is grounded, and the drain of the common-gate transistor M 1SP is connected to one end of the inductor L P3 in the transformer TR2 and one end of the neutralizing capacitor C NP ; the gate of the common-source transistor M 1GP is connected to one end of the gate capacitor C 1G and one end of the bias resistor R 1BG , and the source of the common-source transistor M 1GP is connected to the other end of the inductor L P3 , and the drain of the common-source transistor M 1GP is connected to the input of the inter-stage matching network; the other half of the driver stage circuit comprises a common-source transistor M 1SN , a common-gate transistor M 1GN , a bias resistor R 1BSN and a neutralizing capacitor C NN ; the gate of the common-source transistor M 1SN is connected to one end of the bias resistor R 1BSN , one end of the neutralizing capacitor C NP and one end of the inductor L N2 in the transformer TR2, the other end of the bias resistor R 1BSN is connected to the gate voltage V BS1 , the source of the common-gate transistor M 1SN is grounded, and the drain of the common-gate transistor M 1SN is connected to one end of the inductor L N3 in the transformer TR2 and one end of the neutralizing capacitor C NN ; the gate of the common-source transistor M 1GN is connected to one end of the gate capacitor C 1G and one end of the bias resistor R 1BG , and the source of the common-source transistor M 1GN is connected to the other end of the inductor L N3 , and the drain of the common-source transistor M1GN the input of the interstage matching network; the gate capacitor C 1G is grounded, and the bias resistor R 1BG is connected to the gate voltage V BG1 .

[0009] Further, the interstage matching network adopts a magnetic coupling resonant cavity structure, and contains resistors R PL , R NL , capacitors C O1 , C I2 and a transformer TR3; one end of the capacitor C O1 and one end of the inductor L 1PP in the transformer TR3 are connected to the drain of the common-gate transistor M 1GP , and the other end of the inductor L 1PP is connected to the power supply V DD1 ; one end of the inductor L 1SP in the transformer TR3 is connected to one end of the resistor R PL , and the other end of the resistor R PL is connected to one end of the capacitor C I2 , one end of the bias resistor R 2BSP and the gate of the common-source transistor M 2SP ; correspondingly, the other end of the capacitor C O1 and one end of the inductor L 1PN in the transformer TR3 are connected to the drain of the common-gate transistor M 1GN , and the other end of the inductor L 1PN is connected to the power supply V DD1 ; one end of the inductor L 1SN in the transformer TR3 is connected to one end of the resistor R NL , and the other end of the resistor R NL is connected to the other end of the capacitor C I2 , one end of the bias resistor R 2BSN and the gate of the common-source transistor M 2SN .

[0010] Further, the power stage circuit adopts a pseudo-differential structure, and one half contains the common-source transistor M 2SP , the common-gate transistor M 2GP and the bias resistor R 2BSP ; the gate of the common-source transistor M 2SP is connected to one end of the bias resistor R 2BSP and the output of the interstage matching network, and the other end of the resistor R 2BSP is connected to the gate voltage V BS2 ; the source of the common-source transistor M 2SP is grounded, the drain of the common-source transistor M 2SP is connected to the source of the common-gate transistor M 2GP , and the common-gate transistor M 2GP adopts a thick-gate transistor.2GP Gate connection gate capacitance C 2G One end and bias resistor R 2BG One end, M 2GP The drain of one half is connected to the input of the matching network; the other half contains a common-source transistor M. 2SN common gate transistor M 2GN and bias resistor R 2BSN Common-source transistor M 2SN Gate connection bias resistor R 2BSN The output of one end and the inter-level matching network, R 2BSN The other end is connected to the gate voltage V BS2 M 2SN The source is grounded, M 2SN Drain-connected common-gate transistor M 2GN The source pole, M 2GN Using thick-gate transistors, M 2GN Gate connection gate capacitance C 2G One end and bias resistor R 2BG One end, M 2GN The drain is connected to the input of the output matching network; the gate capacitance C 2G The other end is grounded, and the bias resistor R 2BG The other end is connected to the gate voltage V BG2 .

[0011] Furthermore, the output matching network adopts a magnetically coupled resonant cavity structure, including capacitor C. O2 C O Transformer TR4; Capacitor C O2 One end and the inductor L in transformer TR4 2PP One end is connected to the common gate transistor M 2GP The drain of the inductor L 2PP The other end is connected to the power supply V. DD2 Inductor L in transformer TR4 2SP One end is connected to capacitor C O One end; correspondingly, capacitor C O2 The other end and the inductor L in transformer TR4 2PN One end is connected to the common gate transistor M 2GN The drain of the inductor L 2PN The other end is connected to the power supply V. DD2 Inductor L in transformer TR4 2SN One end is connected to capacitor C O The other end.

[0012] Compared with existing technologies, the beneficial effects achieved by this invention are as follows:

[0013] The wideband power amplifier provided by the application adopts a two-stage structure, both stages adopt pseudo-differential common-source and common-gate structure, the drive stage adopts neutralizing capacitor technology to improve circuit stability, the power stage adopts thick gate transistor to improve gain, the input matching adopts the mode of coupling the common-source stage gate inductance with the common-gate common-source stage interstage inductance and the common-source stage parallel inductance respectively, and the interstage and output wideband matching is realized through the magnetic coupling resonant cavity structure, so as to realize the performance of wideband and high gain of the power amplifier.

[0014] Compared with the existing transformer coupling based wideband power amplifier circuit, the application provides a new inductive coupling mode, that is, the common-source stage gate inductance is coupled with the common-gate common-source stage interstage inductance and the common-source stage parallel inductance respectively, and a new input matching network is realized by utilizing the weak coupling between inductances to expand the working bandwidth. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 It is the circuit schematic diagram of the wideband power amplifier provided by the application.

[0016] Figure 2 It is the curve diagram of the stability factor and S11 with the coupling coefficient k2 of the transformer TR2 changing, wherein (a) represents the curve diagram of the stability factor with k2 changing, and (b) represents the curve diagram of S11 with k2 changing.

[0017] Figure 3 It is the curve diagram of S11 and S21 with frequency changing. The wideband power amplifier provided by the application has a maximum gain of 29.2 dB at 6.65 GHz, and the 3dB bandwidth is 1.9-7.5 GHz.

[0018] Figure 4 It is the curve diagram of saturated output power and power added efficiency with frequency changing. The wideband power amplifier provided by the application has a saturated output power of 28.7 dBm at 3.5 GHz, and a power added efficiency of 37.6%. DETAILED DESCRIPTION

[0019] In order to better understand the purpose, structure and function of the application, the application provides a transformer coupling based wideband power amplifier will be further described in detail below in combination with the drawings.

[0020] As shown in Figure 1 The transformer coupling based wideband power amplifier provided by the application includes two-stage circuit five parts, which are input matching network, drive stage circuit, interstage matching network, power stage circuit and output matching network. The output of the input matching network is connected to the gate of the common-source transistor in the drive stage circuit, the output of the drive stage circuit is connected to one end of the interstage matching network, the other end of the interstage matching network is connected to the input of the common-source transistor in the power stage circuit, and the output of the power stage circuit is connected to the output matching network.

[0021] The input matching network adopts a differential symmetric structure, one half of which comprises a blocking capacitor C P1 , a parallel resistor R P , a series capacitor C P2 , inductances L P1 and L P2 in a weakly coupled transformer TR1, and inductances L P2 and L P3 in a weakly coupled transformer TR2; one end of the blocking capacitor C P1 is connected to the positive end of the input differential signal, and the other end is connected to one end of the series capacitor C P2 and one end of the parallel resistor R P , and the other ends of the series capacitor C P2 and the parallel resistor R P are respectively connected to one end of the inductance L P2 and one end of the inductance L P1 in the transformer TR1, and the other end of the inductance L P2 is connected to the gate of a common-source transistor M 1SP , one end of a middle capacitor C NN and one end of a bias resistor R 1BSP , and the other end of the inductance L P1 is connected to one end of the inductance L N1 , one end of the inductance L P3 in the transformer TR2 is connected to the drain of the common-source transistor M 1SP , and the other end is connected to the source of a common-gate transistor M 1GP ; the other half comprises a blocking capacitor C N1 , a parallel resistor R N , a series capacitor C N2 , inductances L N1 and L N2 in a weakly coupled transformer TR1, and inductances L N2 and L N3 in a weakly coupled transformer TR2; one end of the blocking capacitor C N1 is connected to the negative end of the input differential signal, and the other end is connected to one end of the series capacitor C N2 and one end of the parallel resistor R N , and the other ends of the series capacitor C N2 and the parallel resistor R N are respectively connected to one end of the inductance L N2 and one end of the inductance L N1 in the transformer TR1, and the other end of the inductance L N2 is connected to the gate of a common-source transistor M 1SN , one end of a middle capacitor C NP and one end of a bias resistor R 1BSN , and the other end of the inductance L N1The other end is connected to inductor L P1 At one end, inductor L in transformer TR2 N3 One end is connected to the common-source transistor M 1SN The drain of one end is connected to the common-gate transistor M. 1GN The source pole.

[0022] The driver stage circuit adopts a pseudo-differential structure, with one half containing a common-source transistor M. 1SP common gate transistor M 1GP Bias resistor R 1BSP Neutralizing capacitor C NP Common-source transistor M 1SP Gate connection bias resistor R 1BSP One end, neutralizing capacitor C NN One end and the inductor L in transformer TR2 P2 One end, R 1BSP The other end is connected to the gate voltage V BS1 M 1SP The source is grounded, M 1SP The drain of the transformer TR2 is connected to the inductor L. P3 One end and neutralizing capacitor C NP One end, common source transistor M 1GP Gate connection gate capacitance C 1G One end and bias resistor R 1BG One end, M 1GP The source of the inductor L is connected P3 On the other end, M 1GP The drain is connected to the input of the interstage matching network; the other half contains the common-source transistor M. 1SN common gate transistor M 1GN Bias resistor R 1BSN Neutralizing capacitor C NN Common-source transistor M 1SN Gate connection bias resistor R 1BSN One end, neutralizing capacitor C NP One end and the inductor L in transformer TR2 N2 One end, R 1BSN The other end is connected to the gate voltage V BS1 M 1SN The source is grounded, M 1SN The drain of the transformer TR2 is connected to the inductor L. N3 One end and neutralizing capacitor C NN At one end, the common-source transistor M 1GN Gate connection gate capacitance C 1G One end and bias resistor R 1BG One end, M 1GN The source of the inductor L is connected N3 On the other end, M1GN the input of the interstage matching network; the other end of the bias resistor R 1G is connected to ground, and the other end of the bias resistor R 1BG is connected to the gate voltage V BG1 .

[0023] The interstage matching network adopts a magnetic coupling resonant cavity structure, and comprises resistors R PL , R NL , capacitors C O1 , C I2 , and a transformer TR3; one end of the capacitor C O1 and one end of the inductor L 1PP in the transformer TR3 are connected to the drain of the common-gate transistor M 1GP , and the other end of the inductor L 1PP is connected to the power supply V DD1 ; one end of the inductor L 1SP in the transformer TR3 is connected to one end of the resistor R PL , and the other end of the resistor R PL is connected to one end of the capacitor C I2 , one end of the bias resistor R 2BSP , and the gate of the common-source transistor M 2SP ; correspondingly, the other end of the capacitor C O1 and one end of the inductor L 1PN in the transformer TR3 are connected to the drain of the common-gate transistor M 1GN , and the other end of the inductor L 1PN is connected to the power supply V DD1 ; one end of the inductor L 1SN in the transformer TR3 is connected to one end of the resistor R NL , and the other end of the resistor R NL is connected to the other end of the capacitor C I2 , one end of the bias resistor R 2BSN , and the gate of the common-source transistor M 2SN .

[0024] The power stage circuit adopts a pseudo-differential structure, and one half comprises the common-source transistor M 2SP , the common-gate transistor M 2GP , and the bias resistor R 2BSP ; the gate of the common-source transistor M 2SP is connected to one end of the bias resistor R 2BSP and the output of the interstage matching network, and the other end of the resistor R 2BSP is connected to the gate voltage V BS2 ; the source of the transistor M 2SP is connected to ground, the drain of the transistor M 2SP is connected to the source of the common-gate transistor M 2GP , and the transistor M 2GP adopts a thick-gate transistor. 2GPthe gate of the transistor M 2G one end of the bias resistor R 2BG and the input of the output matching network; the other half contains the common-source transistor M 2GP , the common-gate transistor M 2SN and the bias resistor R 2GN ; the gate of the common-source transistor M 2BSN is connected to one end of the bias resistor R 2SN and the output of the interstage matching network, R 2BSN the other end of which is connected to the gate voltage V 2BSN , the source of the transistor M BS2 is connected to ground, the drain of the transistor M 2SN is connected to the source of the common-gate transistor M 2SN , the gate of the transistor M 2GN is connected to one end of the gate capacitor C 2GN and the bias resistor R 2GN , the drain of the transistor M 2G is connected to the input of the output matching network; the other end of the gate capacitor C 2BG is connected to ground, the other end of the bias resistor R 2GN is connected to the gate voltage V 2G .

[0025] The output matching network employs a magnetically coupled resonant cavity structure, which contains the capacitors C O2 , C O and the transformer TR4; one end of the capacitor C O2 is connected to the drain of the common-gate transistor M 2PP , one end of the inductor L 2GP in the transformer TR4 is connected to the drain of the common-gate transistor M 2PP , the other end of the inductor L DD2 is connected to the power supply V 2SP , one end of the inductor L O in the transformer TR4 is connected to one end of the capacitor C O2 ; correspondingly, the other end of the capacitor C 2PN is connected to the drain of the common-gate transistor M 2GN , one end of the inductor L 2PN in the transformer TR4 is connected to the drain of the common-gate transistor M DD2 , the other end of the inductor L 2SN is connected to the power supply V O , one end of the inductor L in the transformer TR4 is connected to the other end of the capacitor C

[0001] .

[0026] As shown in Fig. Figure 2 (a), as the coupling coefficient k2 gradually increases, the stability factor gradually becomes less than zero, i.e. the circuit is unstable; as shown in Fig. Figure 2(b) as shown, with the coupling coefficient k2 gradually increasing, the area of S11 less than -10dB gradually decreases. Then, the reverse coupling of the common source stage gate inductance and the common gate common source stage inductance can realize the expansion of the working bandwidth under the condition of ensuring the stability of the circuit.

[0027] The broadband power amplifier designed in the application adopts 1.2 / 3.3V power supply voltage. Figure 3 It can be known that the broadband power amplifier designed has the maximum gain of 29.2dB at 6.65GHz, the 3dB bandwidth of 1.9-7.5GHz, and the gain flatness of 2.47dB in the frequency band. Figure 4 The curves of the saturated output power and the power added efficiency changing with the frequency are given. Figure 4 It can be known that the broadband power amplifier designed has the saturated output power of 28.7dBm and the power added efficiency of 37.6% at 3.5GHz, and the 3dB bandwidth of 2-5.5GHz.

[0028] It can be understood that the application is described through some embodiments, and those skilled in the art know that various changes or equivalent replacements can be made to the features and embodiments without departing from the spirit and scope of the application. In addition, the features and embodiments can be modified to adapt to specific conditions and materials under the guidance of the application without departing from the spirit and scope of the application. Therefore, the application is not limited by the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of the application belong to the scope of protection of the application.

Claims

1. A transformer coupled based wideband power amplifier, characterized by, The power amplifier comprises an input matching network, a drive stage circuit with a neutralization capacitor, an inter-stage matching network, a power stage circuit with a thick gate transistor and an output matching network; the drive stage circuit and the power stage circuit are cascaded; an output of the input matching network is connected to an input of a common-source transistor in the drive stage circuit, an output of the drive stage circuit is connected to one end of the inter-stage matching network, the other end of the inter-stage matching network is connected to an input of a common-source transistor in the power stage circuit, and an output of the power stage circuit is connected to the output matching network. The input matching network adopts differential symmetric structure, one half contains isolation capacitor C P1 , parallel resistance R P , series capacitor C P2 , inductance L P1 and L P2 in weak coupling transformer TR1, and inductance L P2 and L P3 in weak coupling transformer TR2; one end of isolation capacitor C P1 is connected to the positive end of input differential signal, the other end is connected to one end of series capacitor C P2 and one end of parallel resistance R P , the other ends of series capacitor C P2 and parallel resistance R P are respectively connected to one end of inductance L P2 and one end of inductance L P1 in transformer TR1, the other end of inductance L P2 is connected to the gate of common source transistor M 1SP , one end of middle capacitor C NN and one end of bias resistance R 1BSP , the other end of inductance L P1 is connected to one end of inductance L N1 , one end of inductance L P3 in transformer TR2 is connected to the drain of common source transistor M 1SP , the other end is connected to the source of common gate transistor M 1GP ; the other half contains isolation capacitor C N1 , parallel resistance R N , series capacitor C N2 , inductance L N1 and L N2 in weak coupling transformer TR1, and inductance L N2 and L N3 in weak coupling transformer TR2; one end of isolation capacitor C N1 is connected to the negative end of input differential signal, the other end is connected to one end of series capacitor C N2 and one end of parallel resistance R N , the other ends of series capacitor C N2 and parallel resistance R N are respectively connected to one end of inductance L N2 and one end of inductance L N1 in transformer TR1, the other end of inductance L N2 is connected to the gate of common source transistor M 1SN , one end of middle capacitor C NP and one end of bias resistance R 1BSN , the other end of inductance L N1 is connected to one end of inductance L P1 one end of the inductor L N3 of the transformer TR2, the other end being connected to the drain of the common-source transistor M 1SN , the other end being connected to the source of the common-gate transistor M 1GN .

2. A transformer coupled broadband power amplifier according to claim 1, characterized in that, The driving stage circuit adopts a pseudo-differential structure, one half of which comprises a common-source transistor M 1SP , a common-gate transistor M 1GP , a bias resistor R 1BSP and a neutralizing capacitor C NP ; the gate of the common-source transistor M 1SP is connected to one end of the bias resistor R 1BSP , one end of the neutralizing capacitor C NN and one end of the inductor L P2 in the transformer TR2, the other end of R 1BSP is connected to the gate voltage V BS1 , the source of M 1SP is grounded, and the drain of M 1SP is connected to one end of the inductor L P3 in the transformer TR2 and one end of the neutralizing capacitor C NP ; the gate of the common-source transistor M 1GP is connected to one end of the gate capacitor C 1G and one end of the bias resistor R 1BG , and the source of M 1GP is connected to the other end of the inductor L P3 , and the drain of M 1GP is connected to the input of the inter-stage matching network; the other half of the driving stage circuit comprises a common-source transistor M 1SN , a common-gate transistor M 1GN , a bias resistor R 1BSN and a neutralizing capacitor C NN ; the gate of the common-source transistor M 1SN is connected to one end of the bias resistor R 1BSN , one end of the neutralizing capacitor C NP and one end of the inductor L N2 in the transformer TR2, the other end of R 1BSN is connected to the gate voltage V BS1 , the source of M 1SN is grounded, and the drain of M 1SN is connected to one end of the inductor L N3 in the transformer TR2 and one end of the neutralizing capacitor C NN ; the gate of the common-source transistor M 1GN is connected to one end of the gate capacitor C 1G and one end of the bias resistor R 1BG , and the source of M 1GN is connected to the other end of the inductor L N3 , and the drain of M 1GN is connected to the input of the inter-stage matching network; the other end of the gate capacitor C 1G is grounded, and the other end of the bias resistor R 1BG is connected to the gate voltage V BG1 .

3. A transformer coupled broadband power amplifier according to claim 1, wherein, The interstage matching network adopts a magnetic coupling resonant cavity structure, and contains resistors R PL , NL , capacitors C O1 , I2 and a transformer TR3; one end of the capacitor C O1 and one end of an inductor L 1PP in the transformer TR3 are connected to the drain of a common-gate transistor M 1GP , the other end of the inductor L 1PP is connected to a power supply V DD1 , one end of the inductor L 1SP in the transformer TR3 is connected to one end of a resistor R PL , the other end of the resistor R PL is connected to one end of a capacitor C I2 , one end of a bias resistor R 2BSP and the gate of a common-source transistor M 2SP ; correspondingly, the other end of the capacitor C O1 and one end of an inductor L 1PN in the transformer TR3 are connected to the drain of a common-gate transistor M 1GN , the other end of the inductor L 1PN is connected to a power supply V DD1 , one end of the inductor L 1SN in the transformer TR3 is connected to one end of a resistor R NL , the other end of the resistor R NL is connected to the other end of a capacitor C I2 , one end of a bias resistor R 2BSN and the gate of a common-source transistor M 2SN .

4. A transformer coupled broadband power amplifier according to claim 1, wherein, The power stage circuit adopts pseudo-differential structure, one half contains common-source transistor M 2SP , common-gate transistor M 2GP and bias resistor R 2BSP ; the gate of common-source transistor M 2SP is connected with one end of bias resistor R 2BSP and the output of inter-stage matching network, the other end of R 2BSP is connected with gate voltage V BS2 , the source of M 2SP is grounded, and the drain of M 2SP is connected with the source of common-gate transistor M 2GP ; M 2GP adopts thick gate transistor, the gate of M 2GP is connected with one end of gate capacitor C 2G and one end of bias resistor R 2BG , and the drain of M 2GP is connected with the input of output matching network; the other half contains common-source transistor M 2SN , common-gate transistor M 2GN and bias resistor R 2BSN ; the gate of common-source transistor M 2SN is connected with one end of bias resistor R 2BSN and the output of inter-stage matching network, the other end of R 2BSN is connected with gate voltage V BS2 , the source of M 2SN is grounded, and the drain of M 2SN is connected with the source of common-gate transistor M 2GN ; M 2GN adopts thick gate transistor, the gate of M 2GN is connected with one end of gate capacitor C 2G and one end of bias resistor R 2BG , and the drain of M 2GN is connected with the input of output matching network; the other end of gate capacitor C 2G is grounded, and the other end of bias resistor R 2BG is connected with gate voltage V BG2 .

5. A transformer coupled broadband power amplifier according to claim 4, characterized in that, The output matching network adopts a magnetic coupling resonant cavity structure, comprising a capacitor C O2 , a transformer TR4, and an inductor L O . O2 One end of the capacitor C 2PP and one end of the inductor L 2GP in the transformer TR4 are connected to the drain of the common-gate transistor M 2PP , and the other end of the inductor L DD2 is connected to the power supply V 2SP . One end of the inductor L O in the transformer TR4 is connected to one end of the capacitor C O2 , and correspondingly, the other end of the capacitor C 2PN and one end of the inductor L 2GN in the transformer TR4 are connected to the drain of the common-gate transistor M 2PN , and the other end of the inductor L DD2 is connected to the power supply V 2SN . One end of the inductor L O in the transformer TR4 is connected to the other end of the capacitor C

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