Radio frequency power amplifier, radio frequency front-end module and electronic device

Abstract

The application provides a radio frequency power amplifier, a radio frequency front-end module and an electronic device. By setting the distance between the first part of the wire and the first radio frequency amplifier chip to be less than the distance between the first input end of the primary coil and the first part of the wire, and the distance between the first part of the wire and the first radio frequency amplifier chip to be less than the distance between the second input end of the primary coil and the first part of the wire, the integration of the radio frequency power amplifier as a whole is better ensured.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and in particular to a radio frequency power amplifier, a radio frequency front-end module, and an electronic device. Background Technology

[0002] With the continuous development of semiconductor technology, the requirements for the functionality and performance of electronic devices are also increasing. For mobile devices, portability and lightweight design are key user needs. Therefore, the integration requirements for various modules within mobile devices are becoming increasingly stringent. For example, with the growing prevalence of 5G mobile communication technology, communication devices need to support a significantly increased number of frequency bands. However, these integration requirements present considerable challenges to the design of the RF front-end. Summary of the Invention

[0003] The purpose of this application is to provide an RF power amplifier, an RF front-end module, and an electronic device that can improve the overall integration.

[0004] In a first aspect, this application provides a radio frequency power amplifier, comprising:

[0005] substrate;

[0006] A first radio frequency amplifier chip is disposed on the substrate, including a chip signal output terminal;

[0007] An output transformer, disposed on the substrate, includes a primary coil and a secondary coil coupled to each other;

[0008] The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal; the chip signal output terminal is connected to the primary coil.

[0009] The primary signal trace includes a first portion of trace located near the first RF amplifier chip, and the first input terminal and the second input terminal of the primary coil are located away from the first RF amplifier chip relative to the first portion of trace.

[0010] Furthermore, the distance between the first portion of the trace and the first RF amplifier chip is less than the distance between the first input terminal of the primary coil and the first portion of the trace, and the distance between the first portion of the trace and the first RF amplifier chip is less than the distance between the second input terminal of the primary coil and the first portion of the trace.

[0011] Furthermore, the RF power amplifier also includes:

[0012] A passive unit network is connected between the signal output terminal of the chip and the primary coil of the output transformer, and at least one element in the passive unit network is disposed between the first input terminal and the first RF amplifier chip.

[0013] Furthermore, the passive unit network includes capacitive and / or inductive elements, which are surrounded by the primary signal traces.

[0014] Furthermore, the secondary coil includes a first output terminal and a second output terminal, which are positioned away from the first RF amplifier chip relative to the first portion of the trace.

[0015] Furthermore, the distance between the first input terminal and the first RF amplifier chip is less than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or, the distance between the second input terminal and the first RF amplifier chip is less than the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0016] Furthermore, the distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or, the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0017] Furthermore, the passive cell network includes a third signal trace disposed in the substrate. The third signal trace includes a second portion of the trace disposed in the first wiring layer of the substrate and a third portion of the trace disposed in the second wiring layer of the substrate. The second portion of the trace and the third portion of the trace overlap in the longitudinal projection.

[0018] A second aspect of this application provides a radio frequency power amplifier, comprising:

[0019] substrate;

[0020] A first radio frequency amplifier chip is disposed on the substrate and includes a first differential output terminal and a second differential output terminal;

[0021] An output transformer, disposed on the substrate, includes a primary coil and a secondary coil coupled to each other;

[0022] The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal. The first differential output terminal is connected to the first input terminal, and the second differential output terminal is connected to the second input terminal.

[0023] The primary signal trace includes a first portion of trace located near the first RF amplifier chip, and the first input terminal and the second input terminal of the primary coil are located away from the first RF amplifier chip relative to the first portion of trace.

[0024] Furthermore, the RF power amplifier also includes:

[0025] A first signal trace, one end of which is connected to the first differential output terminal, and the other end of which is connected to the first input terminal of the primary coil;

[0026] The second signal trace has one end connected to the second differential output terminal, and the other end of the first signal trace is connected to the second input terminal of the primary coil.

[0027] Furthermore, the first signal trace is disposed in at least one wiring layer in the substrate, and the second signal trace is disposed in at least one wiring layer in the substrate.

[0028] Furthermore, the first signal trace overlaps with the first portion of the trace in the longitudinal projection, and / or the second signal trace overlaps with the first portion of the trace in the longitudinal projection.

[0029] Furthermore, the RF power amplifier also includes:

[0030] A third signal trace is provided in the substrate and connected between the first input terminal and the second input terminal of the primary coil.

[0031] The third signal trace and the first signal trace have at least one first overlap in the longitudinal projection, and / or the third signal trace and the first signal trace have at least one second overlap in the longitudinal projection.

[0032] Furthermore, the third signal trace includes a second portion of trace disposed on the first wiring layer of the substrate and a third portion of trace disposed on the second wiring layer of the substrate, wherein the second portion of trace and the third portion of trace overlap in the longitudinal projection.

[0033] Furthermore, the RF power amplifier also includes a first capacitor disposed on the substrate, one end of the first capacitor being connected to the third signal trace, and the other end of the first capacitor being connected to the first input terminal of the primary coil or the second input terminal of the primary coil.

[0034] Furthermore, the first portion of the trace includes a first sub-trace disposed on the first wiring layer of the substrate and a second sub-trace disposed on the third wiring layer of the substrate, and the first signal trace and the first sub-trace and the second sub-trace all overlap in the longitudinal projection.

[0035] Furthermore, the first portion of the trace includes a first sub-trace disposed on the first wiring layer of the substrate and a second sub-trace disposed on the third wiring layer of the substrate. The first sub-trace and the second self-trace are connected through a first via, which is located between the first signal trace and the second signal trace.

[0036] Furthermore, the secondary coil includes a first output terminal, a second output terminal, and a secondary signal trace connecting the first output terminal and the second output terminal. The primary signal trace and the secondary signal trace are disposed in the same wiring layer of the substrate.

[0037] Furthermore, the secondary coil includes a first output terminal, a second output terminal, and a secondary signal trace connecting the first output terminal and the second output terminal. The substrate includes a first wiring layer, a second wiring layer, and a third wiring layer arranged sequentially. The primary signal trace is disposed on the first wiring layer and the third wiring layer, and the secondary signal trace is disposed on the second wiring layer. The primary signal trace and the secondary signal trace are longitudinally coupled.

[0038] Furthermore, the inductance value of the first signal trace is less than the inductance value of the primary signal trace.

[0039] In a third aspect, this application provides a radio frequency front-end module, including the aforementioned radio frequency power amplifier.

[0040] In a third aspect, this application provides an electronic device including the aforementioned radio frequency front-end module.

[0041] In the RF power amplifier, RF front-end module, and electronic device provided in this application embodiment, by setting the distance between the first portion of the trace in the primary coil and the first RF amplifier chip to be less than the distance between the first input terminal of the primary coil and the first portion of the trace, and the distance between the first portion of the trace in the primary coil and the first RF amplifier chip to be less than the distance between the second input terminal of the primary coil and the first portion of the trace, the overall integration of the RF power amplifier is better guaranteed. Attached Figure Description

[0042] Figure 1 This is a schematic diagram of a radio frequency power amplifier provided in an embodiment of this application;

[0043] Figure 2This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0044] Figure 3 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0045] Figure 4 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0046] Figure 5 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0047] Figure 6 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0048] Figure 7 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0049] Figure 8 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0050] Figure 9 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0051] Figure 10 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0052] Figure 11 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0053] Figure 12 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0054] Figure 13 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0055] Figure 14 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application;

[0056] Figure 15 This is a schematic diagram of a radio frequency front-end provided in an embodiment of this application;

[0057] Figure 16 This is a simulation diagram of a radio frequency power amplifier provided in one embodiment of this application. Detailed Implementation

[0058] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0059] It should be understood that this application can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art. In the drawings, for clarity, the dimensions of layers and regions, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0060] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," "linked to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion.

[0061] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0062] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “ / the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “compose” and / or “comprising,” when used in this specification, identify the presence of features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0063] To fully understand this application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0064] At least one embodiment of this application provides a radio frequency power amplifier, including:

[0065] substrate;

[0066] A first radio frequency amplifier chip is disposed on the substrate, including a chip signal output terminal;

[0067] An output transformer, disposed on the substrate, includes a primary coil and a secondary coil coupled to each other;

[0068] The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal; the chip signal output terminal is connected to the primary coil.

[0069] The primary signal trace includes a first portion of trace located near the first RF amplifier chip, and the first input terminal and the second input terminal of the primary coil are located away from the first RF amplifier chip relative to the first portion of trace.

[0070] This embodiment includes a substrate, and a first radio frequency amplifier chip and an output transformer disposed on the substrate. For example, as shown... Figure 1 As shown, a first radio frequency (RF) amplifier chip 10 and an output transformer are disposed on a substrate 100. The first RF amplifier chip 10 is configured to amplify RF signals and output them through chip signal output terminals. Understandably, the number of chip signal output terminals is not limited and can be 1, 2, 3, 4, etc.

[0071] In at least one implementation, such as Figure 1As shown, the chip signal output terminal includes a single-ended signal output terminal A, which is connected to either the first or second input terminal of the primary coil. Optionally, the single-ended signal output terminal A is connected to the first input terminal of the primary coil, and the second input terminal of the primary coil is configured to be grounded or connected to a power supply terminal. Optionally, the first RF amplifier chip includes a third power amplifier transistor, the output terminal of which is connected to the single-ended signal output terminal A. It is understood that the third power amplifier transistor can be implemented as a single amplifier transistor, or as two or more amplifier transistors connected in series or parallel, or using other conventional implementation methods in the art, without limitation. In at least one implementation, the third power amplifier transistor can be a bipolar junction transistor (BJT) or a field-effect transistor (FET), etc. In at least one implementation, the third power amplifier transistor is a heterojunction transistor (HBT). For example, the third power amplifier transistor is a heterojunction transistor implemented using GaAs technology. In at least one implementation, the third power amplifier transistor is an NPN transistor. Understandably, the third power amplifier transistor can be any amplification stage in the RF power amplifier. For example, when the RF power amplifier includes a driver stage and an output stage, the third power amplifier transistor in this embodiment can be any amplification stage (i.e., driver stage or output stage) in the RF power amplifier.

[0072] In at least one implementation, such as Figure 2 As shown, the chip's signal output terminals include a first differential output terminal B and a second differential output terminal C. The first differential output terminal B is connected to the first input terminal, and the second differential output terminal C is connected to the second input terminal. Optionally, the first RF amplifier chip includes a differential power amplifier unit, which may include two differential amplification paths. Figure 2For example, the differential power amplifier unit includes a first power amplifier transistor and a second power amplifier transistor. The output terminal of the first power amplifier transistor is connected to a first differential output terminal B, and the output terminal of the second power amplifier transistor is connected to a second differential output terminal C. It is understood that both the first and second power amplifier transistors can be implemented as a single amplifier transistor, or as two or more amplifier transistors connected in series or parallel, or using other conventional implementation methods in the art, without limitation. In at least one implementation, the first power amplifier transistor can be a bipolar junction transistor (BJT) or a field-effect transistor (FET), etc. The second power amplifier transistor can be a bipolar junction transistor (BJT) or a field-effect transistor (FET), etc. In at least one implementation, the first power amplifier transistor is a heterojunction transistor (HBT), and the second power amplifier transistor is a heterojunction transistor (HBT). For example, the first power amplifier transistor is a heterojunction transistor implemented using GaAs technology, and the second power amplifier transistor is a heterojunction transistor implemented using GaAs technology. In at least one implementation, the first power amplifier transistor is an NPN transistor, and the second power amplifier transistor is an NPN transistor.

[0073] Understandably, the differential power amplifier unit can be any amplification stage in the RF power amplifier. For example, when the RF power amplifier includes a driver stage and an output stage, the differential power amplifier unit in this embodiment can be any amplification stage (i.e., driver stage or output stage) in the RF power amplifier.

[0074] The first power amplifier transistor is configured to receive a first input radio frequency (RF) signal through a first input path, amplify it, and output it through a first output path. The first RF signal is a low-frequency band RF signal. The second power amplifier transistor is configured to receive a second input RF signal through a second input path, amplify it, and output it through a second output path. The second RF signal is also a low-frequency band RF signal. That is, the first and second power amplifier transistors serve as amplifying transistors in the two differential amplification paths of the differential power amplifier unit. Understandably, the first and second RF signals are differential signals. Optionally, the first and second RF signals can be two differential signals converted from a single RF input signal by a power divider, or they can be two differential signals amplified by two different pre-amplifier stages.

[0075] The output transformer is mounted on the substrate 100 and includes a primary coil 21 and a secondary coil 22 coupled to each other. The primary coil 21 includes a first input terminal 211, a second input terminal 212, and a primary signal trace 213 connecting the first input terminal and the second input terminal.

[0076] like Figure 1 , Figure 8 As exemplified, the primary signal trace includes a first portion of trace 2131 disposed adjacent to the first RF amplifier chip. It is understood that the first portion of trace 2131 can be any part of the primary signal trace. The first input terminal 211 and the second input terminal 212 of the primary coil 21 are disposed away from the first RF amplifier chip relative to the first portion of trace 2131. Figure 1 For example, the first input terminal 211 and the second input terminal 212 of the primary coil 21 are located on the right side of the first portion of the trace 2131, and the first RF amplifier chip 10 is located on the left side of the majority of the first portion of the trace 2131.

[0077] Understandably, the first input terminal 211 and the second input terminal 212 of the primary coil 21 can be located on the right side of the first part of the trace 2131, and are not limited to this. Figure 1 The location of the first input terminal is as follows. For example, the first input terminal can be located in an area to the upper right, lower right, or directly right of the first portion of the trace 2131. The second input terminal can be located in an area to the upper right, lower right, or directly right of the first portion of the trace 2131. It is understood that the first input terminal and the second input terminal can be located in the same area to the upper right, lower right, or directly right, or they can be located in different areas. It is understood that the right side mentioned in this embodiment refers to the right side relative to the first RF amplifier chip and / or the right side of the first portion of the trace.

[0078] In at least one embodiment, the first portion of the trace 2131 is the trace closest to the first RF amplifier chip among the primary signal traces. In at least one embodiment, the first portion of the trace 2131 and one side of the first RF amplifier chip are arranged approximately parallel.

[0079] In this embodiment, the first and second input terminals of the primary coil are positioned away from the first RF amplifier chip relative to the first portion of the traces. This provides sufficient space / distance between the chip's signal output terminal and the two input terminals of the primary coil, allowing for adequate space / distance for the traces or components between the chip's signal output terminal and the primary coil, eliminating the need for additional space and improving the overall integration of the RF power amplifier.

[0080] In at least one embodiment, the radio frequency power amplifier can be used to support the amplification of radio frequency signals in 5G bands, such as at least one of the N41, N77, and N79 bands.

[0081] In at least one embodiment, the distance between the first portion of the trace and the first RF amplifier chip is less than the distance between the first input terminal of the primary coil and the first portion of the trace, and the distance between the first portion of the trace and the first RF amplifier chip is less than the distance between the second input terminal of the primary coil and the first portion of the trace.

[0082] In this embodiment, by setting the distance between the first portion of the trace and the first RF amplifier chip to be less than the distance between the first input terminal of the primary coil and the first portion of the trace, and the distance between the first portion of the trace and the first RF amplifier chip to be less than the distance between the second input terminal of the primary coil and the first portion of the trace, the overall integration of the RF power amplifier is better guaranteed.

[0083] In at least one embodiment, the distance between the first portion of the trace and the first RF amplifier chip is less than half the distance between the first input terminal of the primary coil and the first portion of the trace, and the distance between the first portion of the trace and the first RF amplifier chip is less than half the distance between the second input terminal of the primary coil and the first portion of the trace.

[0084] In at least one embodiment, the radio frequency power amplifier further includes:

[0085] A passive unit network is connected between the signal output terminal of the chip and the primary coil of the output transformer, and at least one element in the passive unit network is disposed between the first input terminal and the first RF amplifier chip.

[0086] In this embodiment, the passive unit network comprises at least one passive element. Optionally, the passive unit network includes at least one of an inductor, a capacitor, or a resistor. Optionally, the passive unit network can be the output matching network of an RF power amplifier or a part of the output matching network. In at least one embodiment, the passive unit network is a part of the output matching network. It is understood that some components of the output matching network may be located in the first RF amplifier chip.

[0087] For example, such as Figures 3-4 As shown, the passive cell network 40 is connected between the chip signal output terminal and the primary coil of the output transformer. In at least one embodiment, the passive cell network 40 includes capacitive and / or inductive elements surrounded by the primary signal traces.

[0088] The capacitor element can be a discrete device or implemented through wiring on the substrate. The inductor element can also be a discrete device or implemented through wiring on the substrate. In this embodiment, by placing the capacitor element and / or inductor element within the space surrounded by the primary signal traces, space is fully utilized, and the overall integration of the RF power amplifier is better improved.

[0089] In at least one embodiment, the passive cell network includes a fourth signal trace, one end of which is connected to the chip signal output terminal, and the other end of which is connected to the first or second input terminal of the primary coil. In at least one embodiment, the passive cell network includes a fourth signal trace, one end of which is connected to the single-ended signal output terminal A, and the other end of which is connected to the first or second input terminal of the primary coil.

[0090] In at least one embodiment, the passive cell network includes a capacitor element connected between the chip signal output terminal and the primary coil of the output transformer. The capacitor element can be a discrete device or implemented through wiring on a substrate.

[0091] In at least one embodiment, the passive unit network includes at least a portion of a first passive unit network. In at least one embodiment, the passive unit network includes at least a portion of a second passive unit network. In at least one embodiment, the passive unit network includes at least a portion of a third passive unit network.

[0092] In at least one embodiment, the passive unit network includes at least one of a first passive unit network, a second passive unit network, and a third passive unit network.

[0093] In at least one embodiment, the secondary coil includes a first output terminal and a second output terminal, wherein the first output terminal and the second output terminal are disposed away from the first radio frequency amplifier chip relative to the first portion of the trace.

[0094] In at least one embodiment, the distance between the first portion of the trace and the first RF amplifier chip is less than the distance between the first output terminal of the secondary coil and the first portion of the trace, and the distance between the first portion of the trace and the first RF amplifier chip is less than the distance between the second output terminal of the secondary coil and the first portion of the trace.

[0095] Understandably, the first and second output terminals of the secondary coil can be located on the right side of the first part of the trace 2131, and are not limited to this. Figure 1The location of the first output terminal is as follows. For example, the first output terminal can be located in an area to the upper right, lower right, or directly right of the first portion of the trace 2131. The second output terminal can be located in an area to the upper right, lower right, or directly right of the first portion of the trace 2131. It is understood that the first output terminal and the second output terminal can be located in the same area to the upper right, lower right, or directly right, or they can be located in different areas. It is understood that the right side mentioned in this embodiment refers to the right side relative to the first RF amplifier chip and / or the right side of the first portion of the trace.

[0096] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is less than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or, the distance between the second input terminal and the first RF amplifier chip is less than the distance between the first output terminal or the second output terminal and the first RF amplifier chip. Optionally, the primary coil and the secondary coil may be disposed in the same wiring layer in the substrate, with the secondary coil surrounding the primary coil.

[0097] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or, the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip. Optionally, the primary coil and the secondary coil may be disposed in different wiring layers in the substrate, and the primary coil and the secondary coil are longitudinally coupled. It is understood that longitudinal refers to a relative direction; in this embodiment, longitudinal is the direction approaching the thickness of the substrate.

[0098] In at least one embodiment, the radio frequency power amplifier further includes:

[0099] A third signal trace is disposed in the substrate and connected between the first input terminal and the second input terminal of the primary coil.

[0100] In at least one embodiment, the passive cell network includes the third signal trace, which comprises a second portion of trace disposed on a first wiring layer of the substrate and a third portion of trace disposed on a second wiring layer of the substrate, the second portion of trace and the third portion of trace overlapping in longitudinal projection. In at least one embodiment, the third signal trace is surrounded by the primary signal trace. By using multiple wiring layers and placing the third signal trace in the area surrounded by the primary signal trace, sufficient inductance value of the third signal trace can be ensured. Understandably, longitudinal direction is a relative direction; in this embodiment, longitudinal direction is the direction approaching the thickness of the substrate.

[0101] At least one embodiment of this application provides a radio frequency power amplifier, including:

[0102] substrate;

[0103] A first radio frequency amplifier chip is disposed on the substrate and includes a single-ended signal output terminal.

[0104] An output transformer, disposed on the substrate, includes a primary coil and a secondary coil coupled to each other;

[0105] The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal. The single-ended signal output terminal is connected to the first input terminal of the primary coil, and the second input terminal of the primary coil is configured to be grounded or configured to be connected to a power supply terminal.

[0106] The primary signal trace includes a first portion of trace located near the first RF amplifier chip, and the first input terminal and the second input terminal of the primary coil are located away from the first RF amplifier chip relative to the first portion of trace.

[0107] A passive unit network is connected between the single-ended signal output terminal and the primary coil of the output transformer, and at least one element in the passive unit network is disposed between the first input terminal and the first RF amplifier chip.

[0108] This embodiment sets the first and second input terminals of the primary coil away from the first RF amplifier chip relative to the first portion of the traces. This provides sufficient space / distance between the single-ended signal output terminal and the two input terminals of the primary coil, allowing for adequate space / distance for the traces or components between the chip's signal output terminal and the primary coil, eliminating the need for additional space and improving the overall integration of the RF power amplifier. Furthermore, by setting a passive unit network between the single-ended signal output terminal and the primary coil of the output transformer, and placing at least one component of the passive unit network between the first input terminal and the first RF amplifier chip, space utilization is better utilized, further improving the overall integration of the RF power amplifier.

[0109] At least one embodiment of this application provides a radio frequency power amplifier, including:

[0110] substrate;

[0111] A first radio frequency amplifier chip is disposed on the substrate and includes a first differential output terminal and a second differential output terminal;

[0112] An output transformer, disposed on the substrate, includes a primary coil and a secondary coil coupled to each other;

[0113] The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal. The first differential output terminal is connected to the first input terminal, and the second differential output terminal is connected to the second input terminal.

[0114] The primary signal trace includes a first portion of trace located near the first RF amplifier chip, and the first input terminal and the second input terminal of the primary coil are located away from the first RF amplifier chip relative to the first portion of trace.

[0115] This embodiment includes a substrate, and a first radio frequency amplifier chip and an output transformer disposed on the substrate. For example, as shown... Figure 5 As shown, the first radio frequency amplifier chip 10 and the output transformer 20 are disposed on the substrate 100.

[0116] The first radio frequency amplifier chip 10 includes a first differential output terminal B and a second differential output terminal C. Understandably, the first radio frequency amplifier chip 10 is configured to amplify radio frequency signals and output them as differential signals. In at least one embodiment, the two differential signals of the first radio frequency amplifier chip 10 are output through the first differential output terminal and the second differential output terminal, respectively.

[0117] The output transformer is mounted on the substrate 100 and includes a primary coil 21 and a secondary coil 22 coupled to each other. The primary coil 21 includes a first input terminal 211, a second input terminal 212, and a primary signal trace 213 connecting the first input terminal and the second input terminal.

[0118] like Figure 2 As exemplified, the primary signal trace includes a first portion of trace 2131 disposed adjacent to the first RF amplifier chip. It is understood that the first portion of trace 2131 can be any part of the primary signal trace. The first input terminal 211 and the second input terminal 212 of the primary coil 21 are disposed away from the first RF amplifier chip relative to the first portion of trace 2131. Figure 2 For example, the first input terminal 211 and the second input terminal 212 of the primary coil 21 are located on the right side of the first portion of the trace 2131, and the first RF amplifier chip 10 is located on the left side of the majority of the first portion of the trace 2131.

[0119] In this embodiment, the first input terminal and the second input terminal of the primary coil are positioned away from the first RF amplifier chip relative to the first portion of the trace. This allows the first differential output terminal and the first input terminal to be connected via a first signal trace, and the second differential output terminal and the second input terminal to be connected via a second signal trace. Compared to directly placing the first and second input terminals of the primary coil adjacent to the two differential output terminals, this approach ensures sufficient length for both the first and second signal traces. It also allows for a sufficiently large equivalent inductance between the first differential output terminal of the first RF amplifier chip and the first input terminal of the primary coil, and between the second differential output terminal and the second input terminal of the primary coil. In solutions requiring this inductance, no additional space is needed. Furthermore, the differential amplification approach ensures higher output power for the RF power amplifier, improving its integration while maintaining output power.

[0120] In at least one embodiment, the RF power amplifier is configured to support amplification of low-frequency band RF signals. In at least one embodiment, the RF power amplifier is configured to support amplification of mid-frequency band RF signals. In at least one embodiment, the RF power amplifier is configured to support amplification of high-frequency band RF signals. Optionally, the low-frequency band frequency range includes 0.5 GHz to 1.5 GHz. Optionally, the mid-frequency band frequency range includes 1.7 GHz to 2 GHz; the high-frequency band range includes 2.3 GHz to 2.7 GHz. Optionally, the low-frequency band frequency range is 0.5 GHz to 1.3 GHz. Optionally, the low-frequency band frequency range is 0.6 GHz to 0.9 GHz. Optionally, the low-frequency band frequency range is 0.663 GHz to 0.915 GHz.

[0121] In at least one embodiment, the radio frequency power amplifier further includes:

[0122] A first signal trace, one end of which is connected to the first differential output terminal, and the other end of which is connected to the first input terminal of the primary coil;

[0123] The second signal trace has one end connected to the second differential output terminal, and the other end of the first signal trace is connected to the second input terminal of the primary coil.

[0124] like Figure 5As shown, one end of the first signal trace 31 is connected to the first differential output terminal, and the other end of the first signal trace 31 is connected to the first input terminal of the primary coil. One end of the second signal trace 32 is connected to the second differential output terminal, and the other end of the first signal trace 32 is connected to the second input terminal of the primary coil.

[0125] The first signal trace can be implemented by at least one wiring layer in the substrate, or by wire bonding. The second signal trace can be implemented by at least one wiring layer in the substrate, or by wire bonding.

[0126] In at least one embodiment, the first signal trace is disposed in at least one wiring layer in the substrate, and the second signal trace is disposed in at least one wiring layer in the substrate.

[0127] The first signal trace 31 is disposed in the substrate. Understandably, the first signal trace 31 can be disposed in any wiring layer of the substrate, or in at least two wiring layers of the substrate. One end of the first signal trace 31 is connected to the first differential output terminal, and the other end of the first signal trace is connected to the first input terminal of the primary coil.

[0128] The second signal trace 32 is disposed in the substrate. Understandably, the second signal trace 32 can be disposed in any wiring layer of the substrate, or in at least two wiring layers of the substrate. One end of the second signal trace 32 is connected to the second differential output terminal, and the other end of the first signal trace is connected to the second input terminal of the primary coil.

[0129] In at least one embodiment, such as Figure 5 As shown, the first signal trace 31 overlaps with the first portion of trace 2131 in the longitudinal projection, and / or, the second signal trace 32 overlaps with the first portion of trace 2131 in the longitudinal projection. Figure 5As shown, the first signal trace and the first portion of the trace overlap in their longitudinal projections, and the second signal trace and the first portion of the trace also overlap in their longitudinal projections. It is understood that the first signal trace and the first portion of the trace only overlap in their longitudinal projections; they are not electrically connected through this overlapping portion. Similarly, the second signal trace and the first portion of the trace only overlap in their longitudinal projections; they are not electrically connected through this overlapping portion. For example, the first portion of the trace and the overlapping portion of the first signal trace in their longitudinal projections can be disposed in different wiring layers of the substrate. The first portion of the trace and the overlapping portion of the second signal trace in their longitudinal projections can also be disposed in different wiring layers of the substrate.

[0130] In at least one embodiment, the secondary coil includes a first output terminal and a second output terminal, which are disposed away from the first RF amplifier chip relative to the first portion of the trace. The secondary coil includes a first output terminal and a second output terminal. The first output terminal and the second output terminal are also disposed away from the first RF amplifier chip relative to the first portion of the trace.

[0131] In at least one embodiment, the first output terminal of the secondary coil is connected to the signal output terminal of the radio frequency power amplifier, and the second output terminal is configured to be grounded.

[0132] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is less than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or, the distance between the second input terminal and the first RF amplifier chip is less than the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0133] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or, the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0134] In at least one embodiment, the RF power amplifier further includes a third signal trace disposed on the substrate, connected between a first input terminal and a second input terminal of the primary coil. The equivalent inductance of the third signal trace participates in the matching of the RF power amplifier.

[0135] In at least one embodiment, the third signal trace and the first signal trace have at least one first overlap in their longitudinal projection, and / or, the third signal trace and the second signal trace have at least one second overlap in their longitudinal projection. For example, as... Figure 7 As shown, the third signal trace 33 and the first signal trace 31 have at least one first overlap in the longitudinal projection, and the third signal trace 33 and the second signal trace 32 have at least one second overlap in the longitudinal projection. It is understood that the third signal trace 33 and the first signal trace 31 only overlap in the longitudinal projection, and they are not electrically connected through this overlapping portion. For example, the third signal trace 33 and the overlapping portion of the first signal trace 31 in the longitudinal projection can be disposed in different wiring layers of the substrate. The third signal trace 33 and the overlapping portion of the second signal trace 32 in the longitudinal projection can be disposed in different wiring layers of the substrate.

[0136] The number of the first overlapping portions can be set according to the required inductance value. Understandably, with other settings remaining the same, the higher the required inductance value, the more first overlapping portions are needed. The number of the second overlapping portions can also be set according to the required inductance value. Understandably, with other settings remaining the same, the higher the required inductance value, the more first overlapping portions are needed.

[0137] In at least one embodiment, the third signal trace includes a second portion of the trace disposed on the first wiring layer of the substrate and a third portion of the trace disposed on the second wiring layer of the substrate, wherein the second portion of the trace and the third portion of the trace overlap in longitudinal projection. Figure 7 As shown, the third signal trace can be disposed in at least two wiring layers in the substrate. Furthermore, the two traces disposed in different wiring layers overlap in the longitudinal projection.

[0138] In at least one embodiment, the RF power amplifier further includes a capacitor element 34 disposed on the substrate, one end of the capacitor element being connected to the third signal trace, and the other end of the capacitor element being connected to a first input terminal or a second input terminal of the primary coil. Optionally, the capacitor element is a discrete device.

[0139] In at least one embodiment, the first portion of the trace includes a first sub-trace disposed on a first wiring layer of the substrate and a second sub-trace disposed on a third wiring layer of the substrate, wherein the first signal trace and the first sub-trace and the second sub-trace all overlap in longitudinal projection. Figures 6-7 As shown, the first portion of the trace includes a first sub-trace 21311 disposed on the first wiring layer of the substrate and a second sub-trace 21312 disposed on the third wiring layer of the substrate. The first signal trace 31, the first sub-trace 21311, and the second sub-trace 21312 all overlap in their longitudinal projections. In at least one embodiment, the second signal trace 32 overlaps in its longitudinal projection with both the first and second sub-tracees.

[0140] In at least one embodiment, the first portion of the trace includes a first sub-trace disposed on a first wiring layer of the substrate and a second sub-trace disposed on a third wiring layer of the substrate. The first sub-trace and the second self-trace are connected through a first via 214, which is located between the first signal trace and the second signal trace.

[0141] In at least one embodiment, the secondary coil further includes a secondary signal trace connecting the first output terminal and the second output terminal, wherein the primary signal trace and the secondary signal trace are disposed in the same wiring layer of the substrate.

[0142] In at least one embodiment, the secondary coil further includes a secondary signal trace connecting the first output terminal and the second output terminal. The substrate includes a first wiring layer, a second wiring layer, and a third wiring layer disposed sequentially. The primary signal trace is disposed on the first wiring layer and the third wiring layer, and the secondary signal trace is disposed on the second wiring layer. The primary signal trace and the secondary signal trace are longitudinally coupled. The first, second, and third wiring layers can be arranged in a top-to-bottom order, or in a bottom-to-top order. It is understood that the first, second, and third wiring layers can be adjacent to each other or spaced apart.

[0143] For example, such as Figure 7 As shown, the primary signal traces are disposed on the first and third routing layers, and the primary signal traces disposed on the first and third routing layers can be connected by vias. For example, they can be connected through via 214. The secondary signal traces are disposed on the second routing layer between the first and third routing layers and are longitudinally coupled to the primary signal traces.

[0144] In at least one embodiment, the inductance of the first signal trace is less than the inductance of the primary signal trace.

[0145] At least one embodiment of this application provides a radio frequency power amplifier, including:

[0146] substrate;

[0147] A first radio frequency amplifier chip is disposed on the substrate and includes a first differential output terminal and a second differential output terminal;

[0148] An output transformer, disposed on the substrate, includes a primary coil and a secondary coil coupled to each other;

[0149] The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal;

[0150] A first signal trace is disposed in the substrate, one end of the first signal trace is connected to the first differential output terminal, and the other end of the first signal trace is connected to the first input terminal of the primary coil.

[0151] A second signal trace is disposed in the substrate, one end of the second signal trace is connected to the second differential output terminal, and the other end of the first signal trace is connected to the second input terminal of the primary coil.

[0152] The primary signal trace includes a first portion of trace located near the first RF amplifier chip, and the first input terminal and the second input terminal of the primary coil are located away from the first RF amplifier chip relative to the first portion of trace.

[0153] At least one embodiment of this application provides a radio frequency front-end module, including a radio frequency power amplifier as described in any of the above embodiments.

[0154] At least one embodiment of this application provides an electronic device including a radio frequency front-end module as described in any of the above embodiments.

[0155] At least one embodiment of this application provides a radio frequency power amplifier, including:

[0156] A differential power amplifier unit is configured to support the amplification of low-frequency band radio frequency signals, including a first power amplifier transistor and a second power amplifier transistor; the first power amplifier transistor is configured to receive an input first radio frequency signal through a first input path, amplify it, and output it through a first output path, wherein the first radio frequency signal is a low-frequency band radio frequency signal; the second power amplifier transistor is configured to receive an input second radio frequency signal through a second input path, amplify it, and output it through a second output path, wherein the second radio frequency signal is a low-frequency band radio frequency signal.

[0157] The output transformer consists of a primary coil and a secondary coil that are coupled to each other.

[0158] The first passive unit network includes a first inductor and a second inductor.

[0159] The first inductor is connected in series between the output terminal of the first power amplifier transistor and the first terminal of the primary coil.

[0160] The second inductor is connected in series between the output terminal of the second power amplifier transistor and the second terminal of the primary coil.

[0161] This RF power amplifier includes a differential power amplification unit, which may include two differential amplification paths. Figure 9 For example, the differential power amplifier unit includes a first power amplifier transistor 11 and a second power amplifier transistor 12. Optionally, the differential power amplifier unit is disposed in the aforementioned first radio frequency amplifier chip. In this case, the output terminal of the first power amplifier transistor is connected to the first differential output terminal, and the output terminal of the second power amplifier transistor is connected to the second differential output terminal.

[0162] The first power amplifier transistor 11 is configured to receive a first input radio frequency (RF) signal through a first input path, amplify it, and output it through a first output path. The first RF signal is a low-frequency band RF signal. The second power amplifier transistor 12 is configured to receive a second input RF signal through a second input path, amplify it, and output it through a second output path. The second RF signal is also a low-frequency band RF signal. That is, the first power amplifier transistor 11 and the second power amplifier transistor 12 serve as amplifying transistors in the two differential amplification paths of the differential power amplifier unit. Understandably, the first RF signal and the second RF signal are differential signals. Optionally, the first RF signal and the second RF signal can be two differential signals converted from a single RF input signal by a power divider, or they can be two differential signals amplified by two different pre-amplifier stages.

[0163] In at least one embodiment, the first radio frequency signal is a low-frequency radio frequency signal. In at least one embodiment, the second radio frequency signal is a low-frequency radio frequency signal. Optionally, the frequency range of the low-frequency band is 0.5 GHz to 1.5 GHz. Optionally, the frequency range of the low-frequency band is 0.5 GHz to 1.3 GHz. Optionally, the frequency range of the low-frequency band is 0.6 GHz to 0.9 GHz. Optionally, the frequency range of the low-frequency band is 0.663 GHz to 0.915 GHz.

[0164] The output transformer includes a primary coil 21 and a secondary coil 22 coupled to each other. Optionally, the output transformer can be implemented using the output transformer described in any of the above embodiments / implementations.

[0165] The first passive unit network includes a first inductor 31 and a second inductor 32. The first inductor 31 is connected in series between the output terminal of the first power amplifier transistor and a first terminal of the primary coil. The second inductor 32 is connected in series between the output terminal of the second power amplifier transistor and a second terminal of the primary coil. In at least one embodiment, the first inductor can be implemented using the first signal trace described in any of the above embodiments / implementations, and the second inductor can be implemented using the second signal trace described in any of the above embodiments / implementations.

[0166] The inductance value of the first inductor is greater than 0.1nH.

[0167] In at least one embodiment, the inductance value of the first inductor is greater than 0.3nH, and the inductance value of the second inductor is greater than 0.3nH. In at least one embodiment, the inductance value of the first inductor is greater than 0.5nH, and the inductance value of the second inductor is greater than 0.5nH.

[0168] In at least one embodiment, the inductance value of the first inductor is greater than 0.3nH and less than 5nH, and the inductance value of the second inductor is greater than 0.3nH and less than 5nH. In at least one embodiment, the inductance value of the first inductor is greater than 0.5nH and less than 2nH, and the inductance value of the second inductor is greater than 0.5nH and less than 2nH.

[0169] In at least one embodiment, the inductance of the primary coil is greater than or equal to 3nH. In at least one embodiment, the inductance of the primary coil is greater than or equal to 5nH. In at least one embodiment, the inductance of the primary coil is less than 20nH.

[0170] In at least one embodiment, the turns ratio of the primary coil to the secondary coil is greater than 1:2.

[0171] In at least one embodiment, the inductance value of the first inductor is less than the inductance value of the primary coil, and the inductance value of the second inductor is less than the inductance value of the primary coil.

[0172] In this embodiment, the differential power amplifier unit includes a first power amplifier transistor and a second power amplifier transistor. The first power amplifier transistor is configured to receive an input first radio frequency signal through a first input path, amplify it, and output it through a first output path. The first radio frequency signal is a low-frequency radio frequency signal. The second power amplifier transistor is configured to receive an input second radio frequency signal through a second input path, amplify it, and output it through a second output path. The second radio frequency signal is also a low-frequency radio frequency signal. The output transformer includes a primary coil and a secondary coil coupled to each other. The first passive unit network includes a first inductor and a second inductor. The first inductor is connected in series between the output terminal of the first power amplifier transistor and the first terminal of the primary coil, and the inductance value of the first inductor is greater than 0.1nH. The second inductor is connected in series between the output terminal of the second power amplifier transistor and the second terminal of the primary coil, and the inductance value of the second inductor is greater than 0.1nH. By amplifying the low-frequency radio frequency signal through the differential power amplifier unit, a high output power can be ensured. Furthermore, by configuring the first passive unit network in conjunction with the output transformer, good bandwidth performance in the low-frequency band can be achieved.

[0173] For example, such as Figure 16 As shown, Figure 16 The above-described simulation diagram of the RF power amplifier shows that the impedance of the RF power amplifier remains relatively convergent over a wide frequency band (0.5GHz-1.3GHz).

[0174] In at least one embodiment, the frequency range of the low-frequency band is 0.5 GHz to 1.5 GHz. In at least one embodiment, the turns ratio of the primary and secondary coils of the output transformer is less than or equal to 2. Optionally, the turns ratio of the primary and secondary coils can be 2:1, 2:1, 5, 1:1, 1:1.5, etc.

[0175] In at least one embodiment, the inductance of the primary coil is 3nH-20nH.

[0176] In at least one embodiment, the ratio of the inductance value of the first inductor to the inductance value of the primary coil is less than 0.5, and the ratio of the inductance value of the second inductor to the inductance value of the primary coil is less than 0.5. For example, if the inductance value of the primary coil is 15nH, then the inductance value of the first inductor is less than 7.5nH.

[0177] In at least one embodiment, the ratio of the inductance value of the first inductor to the inductance value of the primary coil is less than 0.2, and the ratio of the inductance value of the second inductor to the inductance value of the primary coil is less than 0.2.

[0178] In at least one embodiment, the ratio of the inductance value of the first inductor to the inductance value of the primary coil is greater than 0.05, and the ratio of the inductance value of the second inductor to the inductance value of the primary coil is greater than 0.05.

[0179] By setting the inductance values ​​of the first inductor, the second inductor, and the primary coil in a coordinated manner, better output impedance matching can be achieved, resulting in better bandwidth performance.

[0180] In at least one embodiment, the radio frequency power amplifier further includes a second passive unit network connected between the differential power amplifier unit and the first passive unit network.

[0181] like Figure 10 As shown, the RF power amplifier also includes a second passive unit network 41. This second passive unit network is connected between the differential power amplifier unit and the first passive unit network. It is understood that the connection of the second passive unit network 41 between the differential power amplifier unit and the first passive unit network is more of a relative positional limitation. The second passive unit network 41 can be connected in series between the differential power amplifier unit and the first passive unit network, or it can be connected in parallel between the differential power amplifier unit and the first passive unit network. Alternatively, some passive components in the second passive unit network 41 can be connected in series between the differential power amplifier unit and the first passive unit network, and some passive components can be connected in parallel between the differential power amplifier unit and the first passive unit network.

[0182] In at least one embodiment, the second passive unit network or a portion thereof may be configured in the manner described in any of the above embodiments / implementations as a passive unit network.

[0183] In at least one embodiment, the second passive unit network includes at least one of a capacitor unit or an inductor unit.

[0184] In at least one embodiment, the second passive cell network includes a first capacitor C1.

[0185] For example, in Figure 11 In (a), the second passive unit network includes a first capacitor C1, which is connected between the output terminal of the first power amplifier transistor and the output terminal of the second power amplifier transistor.

[0186] In at least one embodiment, the second passive cell network includes a first capacitor and a third capacitor. Exemplarily, in... Figure 11In (b), the second passive unit network includes a first capacitor C1 and a third capacitor C3. One end of the first capacitor C1 is connected to the output terminal of the first power amplifier transistor, and the other end of the first capacitor C1 is configured to be grounded. One end of the third capacitor C3 is connected to the output terminal of the second power amplifier transistor, and the other end of the third capacitor C3 is configured to be grounded.

[0187] In at least one embodiment, the second passive cell network includes a first capacitor and a third inductor. For example... Figure 11 In step (c), the first capacitor C1 and the third inductor L3 are connected in series and between the output terminals of the first power amplifier transistor and the second power amplifier transistor. Optionally, the first terminal of the first capacitor is connected to the output terminal of the first power amplifier transistor, the second terminal of the first capacitor is connected to the first terminal of the third inductor, and the second terminal of the third inductor is connected to the output terminal of the second power amplifier transistor.

[0188] In at least one embodiment, the second passive unit network can be Figure 11 A combination of at least two of (a), (b) and (c).

[0189] For example, the second passive cell network includes a first capacitor, a third capacitor, a fifth capacitor, and a third inductor. One end of the first capacitor is connected to the output of the first power amplifier transistor, and the other end of the first capacitor is configured to be grounded. One end of the third capacitor is connected to the output of the second power amplifier transistor, and the other end of the third capacitor is configured to be grounded. The fifth capacitor and the third inductor are connected in series and between the outputs of the first power amplifier transistor and the second power amplifier transistor.

[0190] In at least one embodiment, the second passive cell network includes a first capacitor, a fifth capacitor, and a third inductor. The first capacitor is connected between the output terminals of the first power amplifier transistor and the second power amplifier transistor. The fifth capacitor and the third inductor are connected in series and between the output terminals of the first power amplifier transistor and the second power amplifier transistor.

[0191] In at least one embodiment, the RF power amplifier further includes a third passive unit network connected between the first passive unit network and the output transformer.

[0192] like Figure 12As shown, the RF power amplifier also includes a third passive element network 42. This third passive element network is connected between the first passive element network and the output transformer. It is understood that the connection of the third passive element network 42 between the first passive element network and the output transformer is more of a relative positioning. The third passive element network 42 can be connected in series between the first passive element network and the output transformer, or in parallel between the first passive element network and the output transformer. Alternatively, some passive elements in the third passive element network 42 can be connected in series between the first passive element network and the output transformer, and some passive elements can be connected in parallel between the first passive element network and the output transformer.

[0193] In at least one embodiment, the third passive unit network or a portion thereof may be configured in the manner described in any of the above embodiments / implementations as a passive unit network.

[0194] In at least one embodiment, the third passive unit network includes at least one of a capacitor unit or an inductor unit.

[0195] In at least one embodiment, the third passive cell network includes a second capacitor C2.

[0196] In at least one embodiment, such as Figure 13 As described in (a), the third passive unit network includes a second capacitor connected in series between a first end of the primary coil and a second end of the primary coil. Specifically, the first end of the second capacitor is connected to the first end of the primary coil, and the second end of the second capacitor is connected to the second end of the primary coil.

[0197] In at least one embodiment, the third passive cell network includes a second capacitor and a fourth inductor. For example... Figure 13 As described in (b), the second capacitor C2 and the fourth inductor L4 are connected in series between the first end and the second end of the primary coil. Optionally, the first end of the second capacitor is connected to the first end of the primary coil, the second end of the second capacitor is connected to the first end of the fourth inductor, and the second end of the fourth inductor is connected to the second end of the primary coil.

[0198] In at least one embodiment, a first end of the secondary coil is configured to be connected to an output terminal, and a second end of the secondary coil is configured to be grounded.

[0199] In at least one embodiment, such as Figure 14As shown, the RF power amplifier further includes a second passive unit network 41 and a third passive unit network 42. The specific configurations of the second passive unit network 42 and the third passive unit network 43 can be found in the above embodiments and will not be repeated here.

[0200] In at least one embodiment, the second passive cell network includes a first capacitor, and the third passive cell network includes a second capacitor.

[0201] In at least one embodiment, the capacitance of the first capacitor is greater than the capacitance of the second capacitor. In at least one embodiment, the capacitance of the first capacitor is greater than twice the capacitance of the second capacitor.

[0202] At least one embodiment of this application provides a radio frequency power amplifier, characterized in that it comprises:

[0203] The differential power amplifier unit includes a first power amplifier transistor and a second power amplifier transistor; the first power amplifier transistor is configured to receive an input first radio frequency signal through a first input path, amplify it, and output it through a first output path, wherein the first radio frequency signal is a low-frequency radio frequency signal; the second power amplifier transistor is configured to receive an input second radio frequency signal through a second input path, amplify it, and output it through a second output path, wherein the second radio frequency signal is a low-frequency radio frequency signal.

[0204] The output transformer includes a primary coil and a secondary coil that are coupled to each other.

[0205] The first passive unit network includes a first inductor and a second inductor;

[0206] The first inductor is connected in series between the output terminal of the first power amplifier transistor and the first terminal of the primary coil;

[0207] The second inductor is connected in series between the output terminal of the second power amplifier transistor and the second terminal of the primary coil.

[0208] A second passive unit network is connected between the differential power amplifier unit and the first passive unit network, and the second passive unit network includes a first capacitor;

[0209] A third passive unit network is connected between the first passive unit network and the output transformer. The third passive unit network includes a second capacitor, and the capacitance value of the first capacitor is greater than the capacitance value of the second capacitor.

[0210] At least one embodiment of this application provides a radio frequency front-end module, including:

[0211] substrate;

[0212] A first radio frequency (RF) amplifier chip disposed on a substrate includes a differential power amplifier unit, which includes a first power amplifier transistor and a second power amplifier transistor. The first power amplifier transistor is configured to receive an input first RF signal through a first input path, amplify it, and output it through a first output path. The first RF signal is a low-frequency band RF signal. The second power amplifier transistor is configured to receive an input second RF signal through a second input path, amplify it, and output it through a second output path. The second RF signal is also a low-frequency band RF signal.

[0213] An output transformer mounted on a substrate includes a primary coil and a secondary coil that are coupled to each other.

[0214] The first signal line is connected in series between the output terminal of the first power amplifier transistor and the first terminal of the primary coil;

[0215] The second signal line is connected in series between the output terminal of the second power amplifier transistor and the second terminal of the primary coil.

[0216] like Figure 15 As shown, the radio frequency front-end module includes a substrate 100, and a first radio frequency amplifier chip and an output transformer disposed on the substrate.

[0217] A first signal trace 31 is connected in series between the output terminal of the first power amplifier transistor and the first terminal of the primary coil. A second signal trace 32 is connected in series between the output terminal of the second power amplifier transistor and the second terminal of the primary coil. Optionally, the first signal trace and the second signal trace are signal traces disposed on the substrate, or the first signal trace and the second signal trace are bonding wires. The equivalent inductance of the signal traces or bonding wires on the substrate serves as the first inductor and the second inductor in the above embodiments.

[0218] Understandably, the RF front-end module may also include a second passive unit network, which is connected between the differential power amplifier unit and the first signal trace 31 and the second signal trace 32. The second passive unit network may be disposed within the first RF amplifier chip, or it may be disposed on the substrate, or some of the passive components of the second passive unit may be disposed within the first RF amplifier chip, while the other passive components may be disposed on the substrate.

[0219] Understandably, the RF front-end module may also include a third passive unit network, with the second passive unit network connecting the first signal trace 31 and the second signal trace 32, as well as the output transformer. The third passive unit network may be disposed within the first RF amplifier chip, or on the substrate, or some of the passive components of the third passive unit may be disposed within the first RF amplifier chip, while the remaining passive components may be disposed on the substrate.

[0220] The above description is only a preferred embodiment of this application. It should be noted that for those skilled in the art, several improvements and substitutions can be made without departing from the technical principles of this application, and these improvements and substitutions should also be considered within the scope of protection of this application.

Claims

1. A radio frequency power amplifier, characterized in that, include: substrate; A first radio frequency amplifier chip is disposed on the substrate, including a chip signal output terminal; An output transformer, disposed on the substrate, includes a primary coil and a secondary coil coupled to each other; The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal; the chip signal output terminal is connected to the primary coil. The primary signal trace includes a first portion of trace located near the first RF amplifier chip, and the first input terminal and the second input terminal of the primary coil are located away from the first RF amplifier chip relative to the first portion of trace. The distance between the first portion of the trace and the first RF amplifier chip is less than the distance between the first input terminal of the primary coil and the first portion of the trace, and the distance between the first portion of the trace and the first RF amplifier chip is less than the distance between the second input terminal of the primary coil and the first portion of the trace.

2. The radio frequency power amplifier according to claim 1, characterized in that, Also includes: A passive unit network is connected between the signal output terminal of the chip and the primary coil of the output transformer, and at least one element in the passive unit network is disposed between the first input terminal and the first RF amplifier chip.

3. The radio frequency power amplifier according to claim 2, characterized in that, The passive cell network includes capacitive and / or inductive elements, which are surrounded by the primary signal traces.

4. The radio frequency power amplifier according to claim 1, characterized in that, The secondary coil includes a first output terminal and a second output terminal, which are positioned away from the first radio frequency amplifier chip relative to the first portion of the trace.

5. The radio frequency power amplifier according to claim 4, characterized in that, The distance between the first input terminal and the first RF amplifier chip is less than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is less than the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

6. The radio frequency power amplifier according to claim 4, characterized in that, The distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

7. The radio frequency power amplifier according to claim 2, characterized in that, The passive cell network includes a third signal trace disposed in the substrate. The third signal trace includes a second portion of the trace disposed in the first wiring layer of the substrate and a third portion of the trace disposed in the second wiring layer of the substrate. The second portion of the trace and the third portion of the trace overlap in the longitudinal projection.

8. A radio frequency power amplifier, characterized in that, include: substrate; A first radio frequency amplifier chip is disposed on the substrate and includes a first differential output terminal and a second differential output terminal; An output transformer, disposed on the substrate, includes a primary coil and a secondary coil coupled to each other; The primary coil includes a first input terminal, a second input terminal, and a primary signal trace connecting the first input terminal and the second input terminal. The first differential output terminal is connected to the first input terminal, and the second differential output terminal is connected to the second input terminal. The primary signal trace includes a first portion of trace located near the first RF amplifier chip, and the first input terminal and the second input terminal of the primary coil are located away from the first RF amplifier chip relative to the first portion of trace. A first signal trace, one end of which is connected to the first differential output terminal, and the other end of which is connected to the first input terminal of the primary coil; The second signal trace has one end connected to the second differential output terminal and the other end connected to the second input terminal of the primary coil. The first signal trace is disposed in at least one wiring layer in the substrate, and the second signal trace is disposed in at least one wiring layer in the substrate; The first signal trace overlaps with the first portion of the trace in the longitudinal projection, and / or the second signal trace overlaps with the first portion of the trace in the longitudinal projection.

9. The radio frequency power amplifier according to claim 8, characterized in that, Also includes: A third signal trace is provided in the substrate and connected between the first input terminal and the second input terminal of the primary coil. The third signal trace and the first signal trace have at least one first overlap in the longitudinal projection, and / or the third signal trace and the second signal trace have at least one second overlap in the longitudinal projection.

10. The radio frequency power amplifier according to claim 9, characterized in that, The third signal trace includes a second portion of trace disposed on the first wiring layer of the substrate and a third portion of trace disposed on the second wiring layer of the substrate, wherein the second portion of trace and the third portion of trace overlap in the longitudinal projection.

11. The radio frequency power amplifier according to claim 9, characterized in that, It also includes a first capacitor disposed on the substrate, one end of the first capacitor being connected to the third signal trace, and the other end of the first capacitor being connected to the first input terminal of the primary coil or the second input terminal of the primary coil.

12. The radio frequency power amplifier according to claim 8, characterized in that, The first portion of the trace includes a first sub-trace disposed on the first wiring layer of the substrate and a second sub-trace disposed on the third wiring layer of the substrate. The first signal trace and the first sub-trace and the second sub-trace all overlap in the longitudinal projection.

13. The radio frequency power amplifier according to claim 8, characterized in that, The first portion of the trace includes a first sub-trace disposed on a first wiring layer of the substrate and a second sub-trace disposed on a third wiring layer of the substrate. The first sub-trace and the second sub-trace are connected through a first via, which is located between the first signal trace and the second signal trace.

14. The radio frequency power amplifier according to claim 8, characterized in that, The secondary coil includes a first output terminal, a second output terminal, and a secondary signal trace connecting the first output terminal and the second output terminal. The primary signal trace and the secondary signal trace are disposed in the same wiring layer of the substrate.

15. The radio frequency power amplifier according to claim 8, characterized in that, The secondary coil includes a first output terminal, a second output terminal, and a secondary signal trace connecting the first output terminal and the second output terminal. The substrate includes a first wiring layer, a second wiring layer, and a third wiring layer arranged sequentially. The primary signal trace is disposed on the first wiring layer and the third wiring layer, and the secondary signal trace is disposed on the second wiring layer. The primary signal trace and the secondary signal trace are longitudinally coupled.

16. The radio frequency power amplifier according to claim 8, characterized in that, The inductance of the first signal trace is less than the inductance of the primary signal trace.

17. A radio frequency front-end module, characterized in that, Including the radio frequency power amplifier as described in any one of claims 1-16.

18. An electronic device, characterized in that, Includes the radio frequency front-end module as described in claim 17.

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