Improved susceptor for substrate processing systems

Abstract

A substrate support comprising: at least three pockets defined along a perimeter of the substrate support; an edge gas trench on a top surface of the substrate support; and a first clamping groove positioned radially inward of the edge gas groove on the top surface of the substrate support. Each pocket portion includes a narrow portion and a wide portion located radially outward of the narrow portion. The edge gas trench is concentric with the substrate support. The edge gas groove intersects the narrow portion of each pocket portion. At least thirty through holes are formed in the edge gas groove, and at least one through hole is formed in the narrow part of each bag part.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to U.S. Provisional Patent Application No. 63,359,474, filed on July 8, 2022. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0002] The present disclosure relates generally to substrate processing systems and, more particularly, to pedestals for use with substrate processing systems. Background Art

[0003] The background description provided here is for the purpose of generally presenting the background of the present disclosure. The work of the currently designated inventors within the scope described in this background section and aspects of the specification that were not determined to be prior art at the time of filing the application are neither explicitly nor implicitly admitted to be prior art against the present disclosure.

[0004] During the manufacture of substrates such as semiconductor wafers, etching processes and deposition processes may be performed within a process chamber. The substrate is disposed within the process chamber and on a substrate support such as an electrostatic chuck (ESC) or a pedestal. Process gases are introduced and, in some examples, a plasma is ignited within the process chamber.

[0005] Some substrate supports may include components such as a shadow ring or a carrier ring. For example, a shadow ring may be used to protect the outer edge of a substrate from deposition and etching. The shadow ring may be raised to facilitate transfer of the substrate to the substrate support and then lowered. The inner diameter of the shadow ring overlaps the outer edge of the substrate. Conversely, a carrier ring may be used to raise and lower the substrate for transfer. Summary of the invention

[0006] A substrate support for a substrate processing system comprises: a base plate; at least one pocket defined in a first surface of the base plate, the at least one pocket comprising a recess configured to receive at least a portion of a carrier ring disposed on the first surface of the base plate; a first channel routed through the base plate and arranged to supply a process gas mixture comprising at least a first process gas and a second process gas to a back edge of a substrate disposed on the substrate support; and a second channel routed through the base plate and arranged to supply one of the first process gas and the second process gas to the at least one pocket defined in the first surface of the base plate independently of the first channel.

[0007] In other features, the substrate support further includes the carrier ring. The carrier ring includes at least one contact finger extending downwardly and radially inwardly from the carrier ring, and the contact finger extends into the at least one pocket when the carrier ring is in the lowered position. The at least one pocket includes three pockets. The substrate support further includes an annular plenum defined in the base plate radially inwardly of the at least one pocket, the second channel being in fluid communication with the annular plenum, and the annular plenum being in fluid communication with the at least one pocket. The substrate support further includes at least one outlet channel extending from the annular plenum to the at least one pocket. The at least one outlet channel extends upwardly and radially outwardly from the annular plenum toward the at least one pocket.

[0008] In other features, the second channel extends below the at least one pocket, and at least one outlet channel extends upward from the second channel toward the at least one pocket. The second channel is disposed above the first channel in the base plate. The second channel is disposed below the first channel in the base plate. The substrate support also includes a third channel routed through the base plate and arranged to supply one of the first process gas and the second process gas to the at least one pocket defined in the first surface of the base plate independently of the first channel and the second channel. The second channel is disposed above the first channel in the base plate, and the third channel is disposed below the first channel in the base plate.

[0009] In other features, the substrate support further includes an annular plenum radially inwardly of the at least one pocket defined in the base plate, the second channel being in fluid communication with the annular plenum, and the annular plenum being in fluid communication with the at least one pocket via at least one first outlet channel. The third channel extends below the at least one pocket. At least one second outlet channel extends upwardly from the third channel toward the at least one pocket.

[0010] A system for supplying process gas to a backside edge of a substrate disposed on a substrate support comprises: a gas delivery system for supplying process gas from a plurality of gas sources to the backside edge of the substrate; and a controller for controlling the gas delivery system to supply a process gas mixture comprising at least a first process gas and a second process gas to the backside edge via a first channel routed through the substrate support, and to supply the first process gas and one of the second process gas to a pocket defined in the substrate support via a second channel routed through the substrate support and independent of the first channel.

[0011] In other features, the process gas mixture includes argon and ammonia.The controller supplies one of the first process gas and the second process gas to the pocket via a third channel routed through the substrate support that is independent of the first channel and the second channel.

[0012] A substrate support for a substrate processing system comprises: a base plate; at least one clamping groove defined in a first surface of the base plate; at least one pocket defined in the first surface of the base plate, the at least one pocket comprising a recess configured to receive at least a portion of a carrier ring disposed on the first surface of the base plate; a first channel routed through the base plate and arranged to supply a process gas mixture comprising at least a first process gas and a second process gas from a first plenum to a back edge of a substrate disposed on the substrate support and to the at least one pocket; and a second channel routed through the base plate and arranged to supply one of the first process gas and the second process gas to the back edge of the substrate independently of the first channel from a second plenum located radially inwardly of the first plenum and radially outwardly of the at least one clamping groove.

[0013] In other features, the substrate support further includes a third channel routed through the base plate and arranged to supply one of the first process gas and the second process gas to the at least one pocket defined in the first surface of the base plate. The substrate support further includes a recess defined in the first surface of the substrate support and between the first channel and the second channel. The recess provides fluid communication at the first surface and between the first channel and the second channel.

[0014] A method for supplying process gas to a backside edge of a substrate disposed on a substrate support comprises supplying a process gas mixture comprising at least a first process gas and a second process gas to the backside edge via a first channel routed through the substrate support and supplying one of the first process gas and the second process gas to a pocket defined in the substrate support via a second channel routed through the substrate support and independent of the first channel.

[0015] In other features, the process gas mixture includes argon and ammonia.The method further includes supplying one of the first process gas and the second process gas to the pocket via a third channel routed through the substrate support that is independent of the first channel and the second channel.

[0016] In still other features, the substrate support includes a base and a stem. The base includes a plurality of plates defining a plurality of plenums in the base. The stem is coupled to the base. The stem includes a plurality of conduits in fluid communication with the plurality of plenums.

[0017] In additional features, the base and the stem comprise a metallic material and are cylindrical. The stem has a smaller diameter than the base.

[0018] In additional features, the plurality of plenums are configured to supply one or more gases through a top plate of the base and to clamp a substrate to the top plate using vacuum clamping during processing.

[0019] In additional features, a first plate of the plurality of plates is disposed between second and third plates of the plurality of plates to separate first and second inflatable portions of the plurality of inflatable portions defined by the first, second, and third plates.

[0020] In additional features, the first plenum is configured to supply one or more gases through a top plate of the plurality of plates around an edge of a substrate disposed on the top plate during processing.The second plenum is configured to supply one or more gases to a plurality of pockets extending radially outward from a perimeter of the base.

[0021] In additional features, a third plenum of the plurality of plenums is configured to supply gas radially outward from beneath the substrate through the top plate during processing.

[0022] In additional features, the supply of the one or more gases through the first and second plenums is controlled by respective mass flow controllers.The supply of gas through the third plenum is controlled using a pressure controller.

[0023] In additional features, each of the plurality of inflatable sections is separate from the other inflatable sections. The plurality of conduits are in fluid communication with the plurality of inflatable sections, respectively.

[0024] In additional features, the base includes a plurality of pockets extending radially outward from a periphery of the base. A top plate of the plurality of plates includes a plurality of through holes, each of which is in fluid communication with the plurality of pockets. The plurality of through holes extend radially outward through the top plate at an acute angle relative to an axis perpendicular to the base.

[0025] In additional features, the top plate includes a plurality of concentric grooves. The plurality of gas-filled portions include first, second and third gas-filled portions, which are respectively in fluid communication with the plurality of concentric grooves. The plurality of gas-filled portions include a fourth gas-filled portion, which is in fluid communication with the plurality of through holes. The first, second, third and fourth gas-filled portions are separated.

[0026] In additional features, the top plate includes a plurality of concentric grooves. The plurality of plenums include first, second and third plenums, each in fluid communication with the plurality of concentric grooves. The first, second and third plenums are separate. One of the first, second and third plenums is in fluid communication with the plurality of through holes and in fluid communication with one of the plurality of concentric grooves.

[0027] In additional features, the base includes a plurality of pockets extending radially outward from a periphery of the base.

[0028] In additional features, a top plate of the plurality of plates includes a plurality of concentric grooves. The plurality of concentric grooves are respectively in fluid communication with the plurality of inflatable portions in the base. One of the plurality of concentric grooves intersects the plurality of pockets in a manner proximate to the radially inner ends of the plurality of pockets.

[0029] In additional features, the plurality of concentric grooves include a first concentric groove having a first diameter, a second concentric groove having a second diameter less than the first diameter, and a third concentric groove having a third diameter less than the second diameter. The first diameter is greater than a fourth diameter of the substrate. The second diameter and the third diameter are less than the fourth diameter of the substrate.

[0030] In additional features, the top plate of the plurality of plates further comprises a plurality of through holes in fluid communication with the plurality of pockets, respectively. The plurality of through holes extend radially outward through the top plate at an acute angle relative to an axis perpendicular to the base.

[0031] In additional features, the plurality of plenums include first, second and third plenums, each of which is in fluid communication with the plurality of concentric grooves. A fourth plenum of the plurality of plenums is in fluid communication with the plurality of through holes. The first, second, third and fourth plenums are separate and are in fluid communication with the plurality of conduits, respectively.

[0032] In additional features, the fourth plenum is configured to supply heated gas to the plurality of through holes.

[0033] In additional features, the plurality of plenums include first, second, and third plenums, each in fluid communication with the plurality of concentric grooves. The first, second, and third plenums are separate and each in fluid communication with the plurality of conduits. The first plenum is in fluid communication with the plurality of through holes and one of the plurality of concentric grooves.

[0034] In additional features, a top plate of the plurality of plates includes a plurality of concentric grooves. The plurality of concentric grooves are respectively in fluid communication with the plurality of inflatable portions in the base. One of the plurality of concentric grooves intersects the plurality of pockets in a manner proximate to the radially inner ends of the plurality of pockets.

[0035] In additional features, the plurality of concentric grooves include a first concentric groove having a first diameter, and a second concentric groove having a second diameter less than the first diameter. The first diameter is greater than a third diameter of the substrate. The second diameter is less than the third diameter of the substrate.

[0036] In additional features, a top plate of the plurality of plates further comprises a plurality of through holes in fluid communication with the plurality of pockets, respectively. The plurality of through holes extend radially outward through the top plate at an acute angle relative to an axis perpendicular to the base.

[0037] In additional features, the plurality of plenums include first and second plenums that are respectively in fluid communication with the plurality of concentric grooves. The plurality of plenums include a third plenum that is in fluid communication with the plurality of through holes. The first, second, and third plenums are separate and are respectively in fluid communication with the plurality of conduits.

[0038] In additional features, the plurality of inflatable portions include first and second inflatable portions, which are respectively in fluid communication with the plurality of concentric grooves. The first inflatable portion is in fluid communication with the plurality of through holes and the first concentric grooves. The first and second inflatable portions are separate and are respectively in fluid communication with the plurality of conduits.

[0039] In additional features, the plurality of plates include a first plate coupled to the stem. A second plate has a first surface engaged with the first plate. The second plate includes a circular slot in the second surface. A third plate engages the second surface of the second plate. A fourth plate is engaged to the third plate. A fifth plate is disposed in the circular slot and is engaged to the second plate and the third plate. The second plate includes: a first inflatable portion of the plurality of inflatable portions defined by a first annular groove and a first set of radial grooves extending radially inward from the first annular groove and connected to a first conduit of the plurality of conduits. The third plate includes: a second inflatable portion of the plurality of inflatable portions located on a first surface engaged with the fifth plate, defined by a second set of grooves extending radially inward from the first set of through holes and connected to a second conduit of the plurality of conduits. The diameter of the fifth plate is equal to the inner diameter of the first annular groove. The diameter of the fifth plate is greater than the diameter of the circle in which the first set of through holes is located.

[0040] In additional features, the third plate includes: a third inflatable portion of the plurality of inflatable portions located on the second surface engaged with the fourth plate, defined by a second annular groove, a third group of grooves extending radially outward from the second annular groove, and a fourth group of grooves extending radially inward from the second annular groove and connecting to a third conduit of the plurality of conduits.

[0041] In additional features, the fourth plate includes a first groove and a second groove. The first and second grooves are concentric. The diameter of the first groove is greater than the diameter of the second groove and greater than the diameter of the substrate supported on the substrate support. The third and fourth plates include a second set of through holes in fluid communication with the first plenum and the first groove. The fourth plate includes a third set of through holes extending radially outward at an acute angle relative to an axis perpendicular to the base. The third set of through holes is in fluid communication with the second plenum. The fourth plate includes a fourth set of through holes in fluid communication with the third set of grooves, the second set of grooves, and the third plenum.

[0042] In additional features, the base includes a plurality of pockets extending radially outward from a periphery of the base. The third set of through holes are respectively in fluid communication with the plurality of pockets. The first groove intersects the plurality of pockets in a manner proximate to radial inner ends of the plurality of pockets.

[0043] In additional features, the plurality of plates include: a first plate coupled to the stem; a second plate engaged with the first plate; and a third plate engaged with the second plate. The second plate includes a first plenum of the plurality of plenums defined by an annular groove and a set of radial grooves extending radially inward from the annular groove and connected to a first conduit of the plurality of conduits. The third plate includes a circular groove and a set of through holes in fluid communication with the first plenum.

[0044] In additional features, the base includes a plurality of pockets extending radially outward from a periphery of the base. The circular groove intersects the plurality of pockets proximate radially inner ends of the plurality of pockets. The diameter of the circular groove is greater than the diameter of the substrate supported on the third plate.

[0045] In additional features, a top plate of the plurality of plates includes a plurality of clamping grooves. One of the plurality of plenums is in fluid communication with the plurality of clamping grooves and in fluid communication with one of the plurality of conduits. The plurality of clamping grooves are configured to clamp the substrate to the top plate using a vacuum.

[0046] In additional features, the plurality of clamping grooves include concentric grooves and radial grooves connected to the concentric grooves. The depth of at least one of the concentric grooves and the radial grooves is greater than the width of the at least one of the concentric grooves and the radial grooves.

[0047] In additional features, the top plate includes a plurality of through holes arranged in a plurality of concentric circles in the plurality of radial grooves.

[0048] In additional features, the edges of at least one of the concentric grooves and the radial grooves are rounded.

[0049] In additional features, a top plate of the plurality of plates includes a first groove and a second groove that are in fluid communication with first and second plenums of the plurality of plenums. The first and second grooves are concentric. The diameter of the first groove is greater than the diameter of the second groove and greater than the diameter of the substrate. The base includes a plurality of pockets extending radially outward from the periphery of the base. The first groove intersects the plurality of pockets in a manner close to the radially inner ends of the plurality of pockets. The inner diameter of the first groove is closer to the radially inner ends of the plurality of pockets than the second groove.

[0050] In additional features, the base includes a plurality of pockets extending radially outward from a periphery of the base. Each of the plurality of pockets includes a slot in an outer wall. The slot is positioned away from a joining interface between the plurality of plates.

[0051] In additional features, the height of the slot is less than the thickness of one of the plurality of plates in which the slot is located.

[0052] In additional features, the substrate support further includes a heater coil disposed in one of the plurality of plates. The heater coil includes at least three turns evenly distributed from a center of the base to an outer diameter of the base.

[0053] In additional features, the substrate support also includes a heater coil, which is configured in the base. The heater coil is connected to a power source via a pair of insulated conductors configured through the rod. A temperature sensor is configured in the base. The temperature sensor is connected to the circuit system via an additional conduit configured through the rod. The plurality of conduits, the pair of conductors, and the additional conduit pass through an opening in the rod.

[0054] In still other features, a substrate support includes: at least three pockets defined along a perimeter of the substrate support; an edge gas groove located on a top surface of the substrate support; and a first clamping groove located radially inward of the edge gas groove on the top surface of the substrate support. Each pocket includes a narrow portion and a wide portion located radially outward of the narrow portion. The edge gas groove is concentric with the substrate support. The edge gas groove intersects the narrow portion of each pocket. At least thirty through holes are located in the edge gas groove and there is at least one through hole in the narrow portion of each pocket.

[0055] In additional features, the substrate support further comprises: at least one corner hole located within the narrow portion of at least one of the at least three pockets; and a purge gas groove located on the top surface of the substrate support and between the edge gas groove and the first clamping groove. The at least one corner hole is connected to a gas delivery conduit.

[0056] In additional features, the edge gas trench, the sweep gas trench, and the first clamping trench are concentric.

[0057] In additional features, for the at least one of the at least three pockets, the corner aperture is located at a radially inner sidewall of the narrow portion of the corresponding pocket, the radially inner sidewall of the narrow portion being the pocket surface closest to the center of the substrate support.

[0058] In additional features, the radially inner sidewall is perpendicular to a bottom surface of the corresponding pocket.

[0059] In additional features, the corner hole is located above at least 25% of the height of the radially inner sidewall of the narrow portion of the corresponding pocket, where the height is measured from the bottom surface of the corresponding pocket.

[0060] In additional features, the corner hole is located above at least 50%-75% of the height of the radially inner sidewall of the narrow portion of the pocket.

[0061] In additional features, the gas delivery conduit has a central axis that is not perpendicular to the radially inner sidewall of the narrow portion of the corresponding pocket.

[0062] In additional features, the central axis of the gas delivery conduit forms an acute angle with the radially inner sidewall of the narrow portion of the pocket.

[0063] In additional features, the acute angle is between 20 degrees and 80 degrees.

[0064] In additional features, the acute angle is between 30 degrees and 70 degrees.

[0065] In additional features, the acute angle is between 40 degrees and 60 degrees.

[0066] In additional features, the purge gas trench includes one or more through holes.

[0067] In additional features, the purge gas groove and the first clamping groove include inner radiused portions radially aligned with inner ends of the respective pockets.

[0068] In additional features, the substrate support further includes a plurality of clamping grooves located radially inward of the first clamping groove. The plurality of clamping grooves include a plurality of radial clamping grooves and one or more concentric clamping grooves. At least one of the plurality of radial clamping grooves intersects the at least one concentric clamping groove and the first clamping groove.

[0069] In additional features, the plurality of radial clamping grooves proximate a central portion of the substrate support include a plurality of through holes arranged in a circular array.

[0070] In additional features, the plurality of radial clamping grooves proximate a central portion of the substrate support includes one or more through holes along each of the plurality of radial clamping grooves.

[0071] In additional features, the diameter of the one or more through holes is between 55%-90% of the width of the corresponding radial clamping groove.

[0072] In additional features, at least one of the three pockets is defined in an ear of the substrate support. The ear of the substrate support includes a slot defined on an outer surface of the ear. The slot is completely defined within a single plate.

[0073] In additional features, the substrate support further includes a plurality of ceramic springs disposed on the top surface of the substrate support.

[0074] In additional features, the substrate support further includes a plurality of clamping grooves located radially inward of the first clamping groove. The plurality of clamping grooves include a plurality of radial clamping grooves and one or more concentric clamping grooves. At least one of the plurality of radial clamping grooves intersects the one or more concentric clamping grooves and the first clamping groove.

[0075] In additional features, the plurality of radial clamping grooves proximate a central portion of the substrate support include a plurality of through holes arranged in a circular array.

[0076] In additional features, the plurality of radial clamping grooves proximate a central portion of the substrate support includes one or more through holes along each of the plurality of radial clamping grooves.

[0077] In additional features, the diameter of the one or more through holes is between 55% and 90% of the width of the corresponding radial clamping groove.

[0078] In additional features, at least one of the three pockets is defined in an ear of the substrate support.The ear of the substrate support includes a slot defined on an outer surface of the ear, the slot being completely defined within a single plate.

[0079] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0080] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0081] Figure 1 is a functional block diagram of a substrate processing system including an exemplary carrier ring according to the present disclosure;

[0082] Figure 2A is a first exemplary substrate support according to the present disclosure;

[0083] Figure 2B is a second exemplary substrate support according to the present disclosure;

[0084] Figure 2C yes Figure 2A a plan view of a first exemplary substrate support;

[0085] Figure 2D is a third exemplary substrate support according to the present disclosure;

[0086] Figure 2E is a fourth exemplary substrate support according to the present disclosure;

[0087] Figure 2F is a fifth exemplary substrate support according to the present disclosure;

[0088] Figure 2G is a sixth exemplary substrate support according to the present disclosure;

[0089] Figure 3 showing steps of an exemplary method of supplying a gas mixture to a backside edge of a substrate disposed on a substrate support according to the present disclosure;

[0090] Figure 4A showing a perspective view of an example of a substrate support according to the present disclosure, the substrate support including a plurality of plates defining various plenums in the substrate support;

[0091] Figure 4B and 4C According to the disclosure Figure 4A an exploded view of a substrate support;

[0092] Figure 5 According to the disclosure Figure 4A a cross-sectional view of a substrate support;

[0093] Figures 6A-6C According to the disclosure Figure 4A a top view and a bottom view of a top plate of a substrate support;

[0094] Figure 7 According to the disclosure Figure 4A a top view of a second plate (counted from the bottom) of a substrate support;

[0095] Figure 8 and 9 According to the disclosure Figure 4Aa top view and a bottom view of a third plate (counted from the bottom) of a substrate support;

[0096] Fig.10 According to the disclosure Figure 4A A top view and a bottom view of another plate of the substrate support between the second and third plates (counted from the bottom);

[0097] Figures 11A-11E According to the present disclosure, it is shown in more detail Fig. 6A As shown in Figure 4A An example of a clamping groove on a top plate of a substrate support;

[0098] Fig.12 According to the present disclosure, Figure 4A The edge gas and sweep gas grooves on the top plate of the substrate support are located relative to Figure 4A the spatial relationship of the pockets on the periphery of the substrate support;

[0099] Fig.13 A cross-sectional view showing another example of a substrate support according to the present disclosure;

[0100] Fig.14A and 14B According to the present disclosure, Fig.13 a top view of a top plate of a substrate support;

[0101] Fig.15 and 16 A cross-sectional view showing another example of a substrate support according to the present disclosure;

[0102] Fig.17 According to the present disclosure, Fig.15 and 16 a top view of a top plate of a substrate support;

[0103] Fig.18 and 19 A cross-sectional view showing another example of a substrate support according to the present disclosure;

[0104] Fig. 20A and 20B a side view showing the pocket portion of the base of the present disclosure in greater detail;

[0105] Fig.21A and 21B An example of a heater coil of a susceptor of the present disclosure is shown;

[0106] Fig.22A and 22B An example of a carrier ring and substrate holder assembly according to the present disclosure is shown;

[0107] Figures 23A-25B A cross-sectional view and a perspective view of the stem of the base are shown, which illustrate the arrangement of various conduits in the stem of the base of the present disclosure;

[0108] Fig.26 An example of a substrate processing system for processing a substrate using a susceptor of the present disclosure is shown;

[0109] Fig. 27 a top view showing the pocket portion of the base; and

[0110] Fig.28 An expanded view of the corner hole in the pocket of the base is shown.

[0111] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0112] In a substrate processing system using components such as a shield ring, a carrier ring, a combined shield / carrier ring, and the like, the substrate support may include various features configured to facilitate docking or alignment between the component and the substrate support. For example, a first (upper) surface of the substrate support may include one or more recesses or pockets (e.g., defined by a ceramic layer, a base plate, and the like). In some examples, the pocket is configured to accommodate features of a carrier ring in a lowered position. For example, the pocket may correspond to a substrate pick-up position of a carrier ring (e.g., a position of a finger on a carrier ring configured to pick up a substrate). In other examples, the pocket includes alignment features for aligning the shield ring, the carrier ring, and / or another component with the substrate support.

[0113] In some cases, the pocket may cause process non-uniformity. For example, the deposition thickness on the substrate may be reduced at a position corresponding to the pocket. In some examples, the pocket interrupts the flow of process gases (e.g., argon, ammonia (NH3), etc.) including a purge gas at the edge of the substrate. The substrate support can be configured to supply process gases including a purge gas to the back edge of the substrate to improve deposition uniformity. However, the pocket still interrupts the flow of process gases and causes deposition non-uniformity. For example, supplying a deposition process gas to the back edge of the substrate may increase deposition at a position corresponding to the pocket, but results in deposition non-uniformity at other positions along the edge of the substrate.

[0114] A substrate support according to the present disclosure includes two or more channels configured to supply dedicated flow rates of different process gases or process gas mixtures including a purge gas to the bag portion. For example, the substrate support may include multiple independent gas filling sections and / or channels. In one example, a first channel supplies a process gas mixture (including a purge gas) including multiple process gases (e.g., argon and ammonia) to the back edge of the substrate. The second channel supplies only one of these process gases (e.g., argon) to the bag portion. In some examples, a third channel supplies other of these process gases (e.g., ammonia) to the bag portion (separately from the second channel). In this way, the supply of a process gas mixture and a single process gas in the process gas mixture including a purge gas to different areas of the back edge of the substrate can be individually controlled.

[0115] Reference now Figure 1 , shows an example of a substrate processing system 100 including a substrate support (e.g., a pedestal configured for CVD and / or ALD deposition) 104 according to the present disclosure. The substrate support 104 is disposed within a processing chamber 108. A substrate 112 is disposed on the substrate support 104 during processing. For example, deposition is performed on the substrate 112. The substrate 112 is removed and one or more additional substrates are processed.

[0116] The gas delivery system 120 includes gas sources 122-1, 122-2, ..., and 122-N (collectively referred to as gas sources 122), which are connected to valves 124-1, 124-2, ..., and 124-N (collectively referred to as valves 124) and mass flow controllers 126-1, 126-2, ..., and 126-N (collectively referred to as MFC126). MFC 126 controls the flow of gas from gas sources 122 to manifold 128 where the gas is mixed. The output of manifold 128 is supplied to manifold 136 via optional pressure regulator 132. The output of manifold 136 is input to a gas distribution device such as a multi-injector nozzle 140. Although manifolds 128 and 136 are shown, a single manifold can be used.

[0117] In some examples, a resistive heater 144 can be used to control the temperature of the substrate support 104. Pressure sensors 152, 154 can be disposed within the manifold 128 or the manifold 136, respectively, to measure pressure. A valve 156 and a pump 158 can be used to exhaust reactants from the process chamber 108 and / or control the pressure within the process chamber 108.

[0118] The controller 160 includes a dosing controller 162 that controls the dosing provided by the multi-injector showerhead 140. The controller 160 also controls the delivery of gases from the gas delivery system 120. The controller 160 controls the pressure in the process chamber and / or the exhaust of reactants using the valve 156 and the pump 158. The controller 160 controls the temperature of the substrate support 104 and the substrate 112 based on temperature feedback (e.g., from a sensor in the substrate support (not shown) and / or a sensor measuring the coolant temperature (not shown)).

[0119] Although described as being configured to perform a deposition process, the substrate processing system 100 can be configured to perform an etching process. In some examples, the substrate processing system 100 can be configured to perform etching on the substrate 112 within the same processing chamber 108 as the deposition process. Thus, the substrate processing system 100 can include an RF generation system 164 configured to generate RF power (e.g., as a voltage source, a current source, etc.) and provide it to one of a lower electrode (e.g., a bottom plate of the substrate support 104, as shown) and an upper electrode (e.g., a showerhead 140). The other of the lower electrode and the upper electrode can be DC grounded, AC grounded, or floating.

[0120] By way of example only, the RF generation system 164 may include an RF generator 166 configured to generate an RF voltage that is fed by a matching and distribution network 168 to generate a plasma within the processing chamber 108 to etch the substrate 112. In other examples, the plasma may be generated inductively or remotely. Although, as shown for exemplary purposes, the RF generation system 164 corresponds to a capacitively coupled plasma (CCP) system, the principles of the present disclosure may also be implemented in other suitable systems, such as, by way of example only, a transformer coupled plasma (TCP) system, a CCP cathode system, a remote microwave plasma generation and delivery system, and the like.

[0121] The substrate support 104 includes a carrier ring 170. In some examples, the inner edge of the carrier ring 170 overlaps the outer edge of the substrate 112. The carrier ring 170 can be raised and lowered (e.g., using lift pins and corresponding actuators, Figure 1 For example, the carry ring 170 includes one or more (eg, three evenly spaced) contact fingers 174 extending downwardly from the carry ring 170 and radially inwardly toward the substrate 112 .

[0122] As shown, the carrier ring 170 is in a lowered position. In the lowered position, the contact fingers 174 are disposed within corresponding pockets 178 defined in the upper surface of the substrate support 104. When moved to the raised position, the contact fingers 174 engage the outer edge of the substrate 112 to raise the substrate 112 for transfer. Conversely, when the carrier ring 170 is in the raised position, the substrate 112 is transferred to the contact fingers 174. Next, the carrier ring 170 is lowered to lower the substrate 112 onto the substrate support 104.

[0123] The substrate support 104 according to the present disclosure includes two or more channels configured to supply dedicated flow rates of different deposition process gases or process gas mixtures to the pocket 178 , as described in more detail below.

[0124] Reference now Figure 2A , 2B , 2C and 2D show an exemplary substrate support 200 according to the present disclosure in more detail. Figure 2A and 2B is a cross-sectional view of an example of a substrate support 200 . Figure 2C yes Figure 2A FIG. 2 is a plan (top down) view of a substrate support 200 .

[0125] The bottom plate 204 of the substrate support 200 includes one or more recesses or pockets 208. The bottom plate 204 can be electrically conductive (e.g., composed of a metal such as aluminum). In some examples, the bottom plate 204 can include other materials, such as ceramic materials. The pockets 208 are defined on a first (e.g., upper) surface 212 of the substrate support 200 / bottom plate 204. Figure 2C As shown, three pockets 208 are evenly distributed around the perimeter of the bottom plate 204. For example, the pockets 208 are circumferentially spaced at intervals of 120 degrees. In some examples, one of the pockets 208 may be offset from an adjacent pocket at an interval greater than or less than the 120 degree interval (e.g., offset by 10 degrees). In other examples, the bottom plate 204 includes fewer than or more than three evenly or unevenly distributed pockets 208.

[0126] The pockets 208 are configured to receive at least a portion of a carrier ring 216 supported in a lowered position on the substrate support 200. For example, the carrier ring 216 includes contact fingers 220 extending downwardly from the carrier ring 216 and radially inwardly toward a substrate 224 placed on the substrate support 200. When in the lowered position, the contact fingers 220 are aligned with and disposed within a respective one of the pockets 208. In some examples, an inner edge of the carrier ring 216 overlaps an outer edge of the substrate 224. The carrier ring 216 is Figure 2C Not shown in .

[0127] The carrier ring 216 may be raised and lowered using one or more lift pins 228 and corresponding actuators 232. The actuators 232 may be responsive to control signals received from a controller (e.g., controller 160). In one example, an outer edge of the carrier ring 216 extends radially beyond the outer periphery of the base plate 204. The lift pins 228 are aligned with the outer edge of the carrier ring 216 beyond the outer periphery of the base plate 204. In another example, the carrier ring 216 includes a tongue 236 extending radially outward from the carrier ring 216. The tongue 236 extends outward at a position corresponding to the lift pins 228. In this manner, the lift pins 228 engage the tongue 236 to raise and lower the carrier ring 216. When in the lowered position as shown (e.g., during processing of the substrate 224), the contact fingers 220 are configured within the pocket 208.

[0128] The substrate support 200 according to some examples of the present disclosure includes two or more plenums or channels 240 configured to supply dedicated flow rates of different deposition process gases or process gas mixtures to the bag portion 208. For example, the substrate support 200 includes a first channel 240-1 and a second channel 240-2 (collectively referred to as channels 240). The first channel 240-1 supplies a process gas mixture including a plurality of process gases (e.g., argon and ammonia) to the backside edge of the substrate 224. The second channel 240-2 supplies only one of the process gases (e.g., argon) to the bag portion 208. The first and second channels 240-1, 240-2 may also be referred to as first and second gas channels 240-1, 240-2, respectively. In this way, the supply of the process gas mixture and a single process gas in the process gas mixture to different regions of the backside edge of the substrate 224 may be independently controlled.

[0129] In one example, a gas mixture including a plurality of process gases (e.g., argon and ammonia) is supplied to the first channel 240-1 via a first inlet channel 242. The first channel 240-1 supplies the gas mixture upward toward the backside edge of the substrate 224 via a first outlet channel 244. For example, the first outlet channel 244 is an annular channel surrounding the backside edge of the substrate 224. In contrast, one of the process gases (e.g., argon) is supplied to the second channel 240-2 via a second inlet channel 246, respectively. The second channel 240-2 supplies the process gas to the bag portion 208 via a plurality of second outlet channels 248.

[0130] like Figure 2A As shown, the second channel 240-2 is disposed above the first channel 240-1. The second channel 240-2 supplies the annular plenum 250 located radially inward of the pocket 208. The second outlet channel 248 extends upward and outward (i.e., at an angle) from the annular plenum 250 toward the pocket 208. Figure 2BAs shown, in another example, the second channel 240-2 is disposed below the first channel 240-1. The second channel 240-2 supplies the annular plenum 252 located below the pocket 208. The second outlet channel 248 extends upward from the annular plenum 252 toward the pocket 208.

[0131] The bottom plate 204 may include a first (e.g., lower) portion 260 and a second (e.g., upper) portion 262. For example, the first portion 260 and the second portion 262 correspond to a first plate and a second plate. The first portion 260 and the second portion 262 may be made of the same or different materials. Using the corresponding first portion 260 and the second portion 262 to construct the bottom plate 204 may facilitate the formation of the channel 240 in the bottom plate 204. For example, the channel 240 may be machined into the upper surface of the first portion 260. Then, the first portion 260 and the second portion 262 may be attached (e.g., brazed, welded, etc.) together to form the bottom plate 204. Although only the first portion 260 and the second portion 262 are shown, the bottom plate 204 may include more than two portions attached together. For example, each of the channels 240 may be included in a different portion or plate of the bottom plate 204. In one example, the first channel 240 - 1 is defined in an upper surface of the first portion 260 , and the second channel 240 - 2 is defined in a lower surface of the second portion 262 .

[0132] Figure 2D An example of a substrate support 200 including three channels 240 is shown. In this example, a second channel 240-2 is disposed above the first channel 240-1. The second channel 240-2 supplies an annular plenum 250 located radially inward of the pocket 208. A second outlet channel 248 extends upward and outward from the annular plenum 250 toward the pocket 208. A third channel 240-3 is disposed below the first channel 240-1. A third inlet channel 270 supplies process gas to the third channel 240-3. The third channel 240-3 supplies an annular plenum 272 located below the pocket 208. A third outlet channel 274 extends upward from the annular plenum 272 toward the pocket 208.

[0133] exist Figure 2D In the example shown, the gas mixture can be supplied to the backside edge of the substrate 224 and the pocket 208 through three separate channels. As an example, the first channel 240-1 supplies a process gas mixture including a plurality of process gases (e.g., a first gas and a second gas, such as ammonia and argon) to the backside edge of the substrate 224. In other words, the first channel 240-1 supplies the process gas mixture to the entire backside edge (e.g., via the annular outlet channel 244). The process gas mixture can be supplied continuously during a deposition step or process.

[0134] The second gas channel 240-2 supplies a subset (e.g., only one) of the process gases in the gas mixture to the bag portion 208. In other words, the gas supplied by the second gas channel 240-2 corresponds to one of the gases in the gas mixture supplied by the first gas channel 240-1. In this example, the second gas channel 240-2 supplies the first process gas (e.g., ammonia) to the bag portion 208. The second gas channel 240-2 can supply the first process gas to the bag portion 208 continuously and / or at periodic intervals.

[0135] The third gas channel 240-3 supplies another subset of the process gases in the gas mixture to the bag portion 208. The gas supplied by the third gas channel 240-3 can be the same or different than the gas supplied by the second gas channel 240-2. In this example, the third gas channel 240-3 supplies the second process gas (e.g., argon) to the bag portion 208. The third gas channel 240-3 can supply the second process gas to the bag portion 208 continuously and / or at periodic intervals.

[0136] The third gas channel 240-3 may supply the second process gas to the pocket portion 208 at the same or different time as the second gas channel supplies the first process gas to the pocket portion 208. For example, the second gas channel 240-2 supplies the first process gas to the pocket portion 208 during a deposition step to improve deposition uniformity at the edge of the substrate 224. In contrast, the third gas channel 240-3 supplies the second process gas as a purge gas to purge the pocket portion 208 after a deposition step.

[0137] A controller (e.g., controller 160, dosing controller 162, etc.) is used to control the supply (i.e., flow rate) of the process gas through the channel 240. The process gas supplied by the channel 240 may be the same or different from the process gas supplied by the showerhead 140. Thus, the controller 160 may be configured to control the supply of the process gas from the same gas delivery system 120 to the channel 240. In other examples, the controller 160 may control the supply of the process gas from a different gas delivery system (e.g., a different gas source, a valve, etc.) to the channel 240.

[0138] Figure 2E , 2F2G show other exemplary configurations of the substrate support 200. For simplicity, some elements (e.g., inlet channels, actuators 232, and pins 228, etc.) are not shown. In these and other examples, the substrate support 200 can include a clamping groove 276 defined in the upper surface 212 below the substrate 224. A clamping gas is supplied to the clamping groove 276 to clamp the substrate 224 to the substrate support 200. Typically, the gas pressure within the clamping groove 276 is less than the pressure within the process volume of the processing chamber (i.e., the chamber pressure above the substrate 224). Therefore, process gas may leak into the clamping groove 276, etc., under the back side of the substrate 224.

[0139] like Figure 2E , 2F 2G, the substrate support 200 includes dedicated purge plenums 278-1 and 278-2 (collectively referred to as purge plenums 278). The purge plenum 278-1 can be disposed radially outward of the outer edge of the substrate to supply process gas or purge gas (e.g., argon) to the backside edge of the substrate 224 and to the pocket 208 via corresponding channels. For example, the purge plenum 278-1 is configured similarly to the first channel 240-1 described above.

[0140] In contrast, a purge plenum 278-2 is disposed radially inward of the purge plenum 278-1 and the outer edge of the substrate 224 and radially outward of the clamping groove 276. A purge gas (e.g., argon) is independently supplied to the purge plenum 278-2 and upwardly through the purge channel 280. The purge gas flows outwardly from the purge channel 280 toward the backside edge of the substrate 224 and inwardly toward the clamping groove 276. In this manner, the purge gas supplied to the purge plenum 278-2 prevents process gas flow under the backside edge of the substrate 224 and into the clamping groove 276.

[0141] The pressure of the purge gas supplied to the purge plenum 278 relative to the chamber pressure may vary. For example, the purge plenum 278-2 may supply purge gas at a pressure greater than the chamber pressure. In other examples, the purge plenum 278-2 provides purge gas at a pressure less than the chamber pressure.

[0142] like Figure 2E and Figure 2G As shown, the substrate support 200 includes another plenum 282 disposed radially inwardly of the purge plenum 278-1. The plenum 282 is arranged to supply a dedicated flow of purge and / or process gas to the bag 208. For example, the plenum 282 is configured similarly to the second channel 240-2, the second outlet channel 248, and the annular plenum 250 described above. In contrast, as Figure 2FAs shown, the purge plenum 278 - 1 supplies gas to the bag 208 via both outlet channels 284 and 286 .

[0143] like Figure 2G As shown, the upper surface 212 of the substrate support 200 includes an annular recess or channel 290 between the purge plenum 278-1 and the purge plenum 278-2. The channel 290 allows fluid communication between the purge plenum 278-1 and the purge plenum 278-2 at the upper surface 212. Therefore, the flow of purge gas outward from the purge channel 280 toward the backside edge of the substrate 224 is increased, which reduces the possibility of the substrate 224 detaching from the substrate support 200. In addition, the supply of purge gas from the purge plenum 278-2 to the pocket 208 is increased. The depth of the channel 290 can be varied to control the desired purge gas flow rate.

[0144] Figure 3 An exemplary method 300 of supplying a gas mixture to a backside edge of a substrate disposed on a substrate support according to the present disclosure is shown. For example, the method 300 can be performed by the controller 160, the gas delivery system 120, etc. At 304, the substrate is disposed on the substrate support for processing (e.g., a deposition step). For example, the substrate is transferred to a carrier ring in a raised position, and the carrier ring is lowered to lower the substrate onto the substrate support.

[0145] At 308, processing (e.g., a deposition step) begins. At 312, a deposition process gas mixture is supplied to the processing chamber via a gas distribution device (e.g., a showerhead). At 316, the method 300 determines whether to supply a process gas to the backside edge of the substrate. For example, the process gas may be continuously supplied to the backside edge during the deposition step or only during a specific period of time. In one example, the process gas is supplied to the backside edge in pulses, in intermittent periods during the deposition step, conditionally (e.g., in response to a process parameter meeting a specific indicator), and the like. If yes, the method 300 continues to 320. If no, the method 300 continues to 324.

[0146] At 324 , the method 300 determines whether the deposition step is complete. If yes, the method 300 ends. If no, the method 300 continues to 312 .

[0147] At 320, process gas is supplied to the backside edge of the substrate via a first channel (e.g., first channel 240-1). At 328, method 300 determines whether process gas is supplied to the pocket via a second channel (e.g., second channel 240-2). For example, process gas may be continuously supplied to pocket 208 via second channel 240-2 during the deposition step or only during a specific period of time. If yes, method 300 continues to 332. If no, method 300 continues to 324.

[0148] At 332, one or more process gases are supplied to the backside edge of the substrate via the second channel 240-2. In one example, one of the process gases supplied via the first channel 240-1 is supplied to the bag portion 208 via the second channel 240-2. In another example, one of the process gases supplied via the first channel 240-1 is supplied to the bag portion 208 via the second channel 240-2, and another of the process gases supplied via the first channel 240-1 is supplied to the bag portion 208 via a third channel (e.g., the third channel 240-3).

[0149] Reference below Figure 4A-25B Additional examples of base designs are shown and described. For example, Ref. Figure 4A-12 A base including a plurality of separate inflatable sections is shown and described. In addition to the separate inflatable sections, the base includes a number of features that provide various advantages, which are first summarized below and then described in detail. Figure 13-25B Additional examples of base designs incorporating various combinations of these inflatable portions and features are shown and described. Fig.26 An example of a substrate processing system that may utilize any of the pedestal designs described herein is shown and described.The remaining figures show in more detail the arrangement of conduits that supply gas to the plenum.

[0150] Some of the base designs described below are similar to those referenced above. Figure 1-3 is similar to that described above and is shown and described in more detail below. For example, Figure 2E and 2F The base designs shown are Figure 5 and 13 See more details in the Reference Figure 1-3 Any single feature or combination of features shown and described may be implemented in the examples shown and described with reference to Figures 4 to 25. The pedestals described herein are also generally referred to as substrate supports.

[0151] Briefly, the features of the pedestal described below provide the following advantages. In some applications, a processed substrate shows evidence of deposition on a back side (i.e., the bottom surface of the substrate) that rests on the top surface of the pedestal. In particular, the back side exhibits deposition in an area where the top surface of the pedestal includes grooves (e.g., vacuum clamping grooves) and includes pockets of a carrier ring that supports the carrier substrate during substrate transport. One way to alleviate the back side deposition problem is to supply an edge gas via grooves on the top surface of the pedestal so that the edge gas flows radially outward from below the substrate. The radially outward gas flow prevents the process gas from diffusing into the area below the substrate, which in turn prevents back side deposition and also minimizes corrosion caused by process chemicals in radially inner portions of the top surface of the pedestal.

[0152] In addition, various components of the susceptor may cause cold spots and temperature non-uniformities on the substrate. For example, the pocket region may cause a cold spot on the portion of the substrate disposed above the pocket region. To avoid cold spots, the pocket region may be reduced in size (e.g., the pocket may be recessed radially outward). Additionally, gas may be supplied into the pocket via a separate plenum to improve process uniformity for substrates at substrate locations disposed above the pocket region.

[0153] In addition, the gas supplied into the pocket via the independent plenum can be heated to locally increase the temperature of the substrate in the region directly above the pocket, which improves temperature non-uniformity and reduces cold spots on the substrate in the region directly above the pocket. For example, the temperature of the gas (e.g., the power supplied to a heater used to heat the gas) can be selected based on the wafer thickness measured during substrate processing. In addition, the inner diameter of the groove on the top surface of the pedestal providing the edge gas can be increased to minimize the substrate overhang above the groove, which improves non-uniformity at the edge of the substrate.

[0154] In addition, ceramic springs are often used on the top surface of the pedestal to support the substrate prior to clamping. Ceramic springs can also create cold spots on the portion of the substrate above the ceramic springs. In some examples, the ceramic springs can be removed to eliminate the cold spots caused by the ceramic springs. Other causes of cold spots include a circular cutout near the center of the top surface of the pedestal where orifices for vacuum clamping are provided. The pedestals described below eliminate these cutouts. Alternatively, the clamping grooves in these pedestals have a narrow width and increased depth to accommodate multiple orifices for vacuum clamping in the clamping grooves without using cutouts. The narrow width of the clamping grooves will minimize the cold spots caused by the clamping grooves on the substrate.

[0155] In some examples, the clamping grooves are rounded to reduce the adverse effects of material buildup along the edges of the clamping grooves due to reaction of the top surface of the pedestal with the process chemicals. For example, buildup along the edges of the clamping grooves tends to grow and lift the substrate, which can adversely affect substrate clamping and cause non-uniformity issues. Due to the rounding of the clamping grooves, even if material builds up along the edges of the clamping grooves, there is a gap between the substrate and the buildup, which prevents the buildup from interfering with substrate clamping, which in turn prevents process gases from leaking into the area below the substrate and compromising substrate clamping. Therefore, the rounded grooves help prevent process variations caused by surface irregularities caused by material buildup on the top surface of the pedestal.

[0156] In addition, heaters embedded in the susceptor are typically sparse (i.e., include only two or three turns of the coil that are unevenly distributed across the radius of the susceptor), which results in non-uniform temperature in the substrate. Alternatively, the susceptor described below includes a dense heater (i.e., includes a coil with more than three turns). The heater coils are also evenly distributed radially on the susceptor, which improves radial temperature uniformity in the substrate.

[0157] Moreover, the base is usually formed by brazing a plurality of plates together. The pocket includes a slot in which a nut plate and a washer are arranged to secure the wheel seat assembly in the pocket (see Fig. 20A and 20B The wheel carriage assembly receives and supports a carrier ring and substrate holder assembly for transferring substrates between the several stations. (See Fig. 20A and 20B ). If the groove is formed at the interface where the two plates are brazed (i.e., in the middle of the brazing plane), the brazed joint strength between the two plates is reduced because the groove reduces the contact area between the two plates. In addition, the gasket tends to expand due to corrosion and heat, which delaminates the pocket.

[0158] Alternatively, in the base described below, the slots in the pockets are formed and positioned away from the brazing interface of the plates so that the slots are not at the interface where the two plates are brazed (i.e., the slots are not in the middle of the brazing plane). Therefore, a larger surface area of ​​the plates can be used to braze the plates, which results in increased joint strength between the plates. In addition, when the gasket expands, the mechanical force from the expansion is less than the bonding force holding the plates together, which prevents delamination of the pockets. These and other features of the base of the present disclosure are described in detail below.

[0159] Throughout Figure 4A-25B In the following description of the base shown, the axis parallel to the plane in which the plate of the base lies is called Figure 4A-22B The horizontal axis or x-axis shown; and the axis perpendicular to the plane of the plate on the base is called Figure 4A-22BThe vertical axis, base axis, or z-axis is shown.

[0160] Figure 4A-12 A base 400 is shown including a plurality of separate inflatable sections and other features. Figure 4A A perspective view of base 400 is shown. Figure 4B and 4C Shows Figure 4A 400 is an exploded view of the base 400 shown in FIG. Figures 4A-4C These features are first referenced Figures 4A-4C Brief description and subsequent reference Figure 5-12 Detailed description.

[0161] exist Figures 4A-4C In the embodiment, the base 400 is made of a metal material (e.g., aluminum or an alloy). In some examples, the base 400 can be made of other materials, such as ceramic materials. The base 400 includes a base 402 and a rod 404. The base 402 is generally cylindrical and extends radially along the x-axis. The rod 404 is also generally cylindrical and has a smaller diameter than the base 402. The rod 404 is coupled to the bottom of the rod 404 near the center of the base 402. The rod 404 extends along the z-axis. The rod 404 is hollow and constrains a plurality of conduits, as described below.

[0162] The wall of the stem 404 is thick enough to provide sufficiently high creep resistance at high process temperatures. The creep resistance of a material is the ability of the material to resist creep, which is the tendency of a material to slowly deform under long-term exposure to high stress levels. Creep deformation generally occurs when a material is stressed at a temperature close to its melting point. Creep resistance can generally be defined in terms of the amount of creep produced by the amount of strain applied to the material over a period of time. In other words, creep resistance is defined by the stress level required to produce a nominal strain (e.g., 0.1, 0.2, or 0.5%) over a period of time (e.g., 100,000 hours). Creep resistance is affected by a variety of factors, such as the properties of the material, the length of time the material is exposed to the stress source, the temperature at which the material is exposed to the stress source, and the power of the stress source (e.g., the heat load applied to the stem 404 during substrate processing). Therefore, the material and material thickness of the stem 404 are selected to provide sufficiently high creep resistance at high process temperatures. In some examples, thin walls may be used, which may reduce power consumed by the susceptor to maintain the set point temperature and heat losses.

[0163] A plurality of gas conduits, shown generally at 406, are configured to pass through the stem 404 and connect to various plenums in the base 402 formed by the different plates of the base 402, as described below. The conduits 406 supply gas to the plenums, as described below. In addition, additional conduits for powering a heater disposed in the base 402 and for sensing the temperature of the base 402 are also disposed through the stem 404, as described below. Figures 23A-25B The catheter 406 is shown in detail.

[0164] like Figure 4B and 4C As shown in the exploded view of the base 400 in FIG. 1 , the base 402 includes four plates connected (e.g., brazed) together: a first plate 410, a second plate 412, a third plate 414, and a fourth plate 416. The plates 410, 412, 414, 416 are generally cylindrical. The rod 404 is coupled to the first plate 410. The heater coil 440 is disposed in the second plate 412. The various inflatable systems described below are defined by the second, third, and fourth plates 412, 414, 416. In some examples, the fifth plate 418 (see Figure 5 ) is disposed between the second plate 412 and the third plate 414 to further define these plenums, as described in detail below. The fourth plate 416 is also referred to as the top plate 416 of the susceptor 400, and the substrate 417 (see Figure 5 ) is placed on a fourth plate 416. The various features of plates 410-418 are Figures 4A-4C These features are first referenced Figures 4A-4C Brief description and subsequent reference Figure 5-12 Detailed description.

[0165] refer to Figure 4A , the top plate 416 includes various grooves. For example, the top plate 416 includes edge gas grooves 420, purge gas grooves 422, and a plurality of vacuum clamping grooves shown generally at 424. The vacuum clamping grooves 424 are hereinafter referred to as clamping grooves 424. The clamping grooves 424 include all grooves shown within (i.e., radially inside) the purge gas grooves 422. Some of the clamping grooves 424 are concentric (i.e., annular or circular), while some of the clamping grooves 424 extend radially. The concentric and radial clamping grooves are generally referred to as clamping grooves 424, and are also individually referred to as concentric clamping grooves 424 and radial clamping grooves 424. Some of the radial clamping grooves 424 intersect with the concentric clamping grooves, while some of the radial clamping grooves are interconnected with the concentric clamping grooves. The radial clamping grooves that intersect the concentric clamping grooves are longer than the radial clamping grooves that interconnect the concentric clamping grooves. Therefore, all radial and concentric (i.e., annular or circular) clamping grooves 424 are interconnected. The clamping grooves 424 are shown in detail in Figures 6A-6C .

[0166] like Fig. 6A 416. As shown, edge gas trench 420 and sweep gas trench 422 are concentric (i.e., annular or circular). Edge gas trench 420 is the radially outermost trench on the top surface of fourth plate 416. The inner diameter (ID) of edge gas trench 420 is greater than the diameter of substrate 417 (represented by the dashed circle). The outer diameter (OD) of edge gas trench 420 is less than the diameter of fourth plate 416. The OD of sweep gas trench 422 is less than the ID of edge gas trench 420 and also less than the diameter of substrate 417.

[0167] Generally, the diameter of the purge gas trench 422 is smaller than the diameter of the edge gas trench 420 and the substrate 417. The purge gas trench 422 radially circumscribes the clamping trench 424. The ID of the purge gas trench 422 is a larger diameter compared to the OD of the outermost circular clamping trench 424. Generally, the diameter of the purge gas trench 422 is larger than the diameter of the outermost circular clamping trench 424. The trenches 420, 422, 424 are connected to corresponding separate plenums located in the base 402 of the pedestal 400 via one or more gas channels, as described below with reference to Figure 5 described.

[0168] exist Figure 4A , the pedestal 400 includes a plurality of pockets 430-1, 430-2, and 430-3 (individually referred to as pockets 430 and collectively referred to as pockets 430). As the substrate 417 is transferred to and from the pedestal 400, the pockets 430 support a carrier ring (not shown), as described below with reference to Fig.26 The pocket 430 is formed along the outer diameter (OD) of the base 402 of the base 400 (e.g., along the outer upper edge or perimeter). The plurality of plates 412-416 form portions of the pocket 430, such as Figure 4B and 4C The pockets 430 are formed when the plurality of plates 412-416 are joined (e.g., brazed, welded, soldered, etc.) together. Thus, the pockets 430 are homogenous (i.e., integral) with the plurality of plates 412-416 and the base 402 of the base 400. The pockets 430 are formed approximately 120 degrees apart from one another. The pockets 430 protrude from the OD of the base 402 of the base 400 and extend along the x-axis and the y-axis (see Fig.21A and 21B The top end of the pocket 430 is flush or level with the top surface of the fourth plate 416 (ie, located in the same plane).

[0169] Each pocket 430 includes a slot 432 extending radially into the outer periphery of the base 402 of the pedestal 400. The edge gas grooves 420 intersect the slots 432 in the pockets 430. Each of the slots 432 has at least one through hole 423 in the edge gas groove 420 (see Fig. 9 ). Fig.22A and 22B As shown and described, there is a substrate 417 for supporting (see Figure 5 )'s protrusion 436 and substrate holder assembly 438 are disposed in a slot 432 in the bag portion 430 .

[0170] In some examples, the base 400 includes an additional set of apertures (see Figure 5 ), which opens into the pocket 430 and supplies edge gas through a separate plenum in the base 402 of the base 400 as described below. The base 400 includes a fifth plate (see Figure 5 ), which separates some of the inflatable parts, as described below. Figure 4B and 4C These and various other features of the plates 412-416 visible in the exploded view shown below are referenced Figure 5-12 Detailed description.

[0171] Figure 5 An example of a cross-sectional view of the base 400 is shown. The first end of the stem 404 connected to the first plate 410 is flared (i.e., extends radially outward) near the first plate 410. For example, the stem 404 has a Y-shaped profile at the first end attached to the first plate 410. The heater coil 440 includes an inner loop within a circular area located at the center of the base 402, where the circumference of the circle passes through two interdigitated fingers of the Y-shaped profile of the stem 404. The wall of the stem 404 is also made thick to improve creep resistance at high process temperatures. The Y-shaped profile and increased thickness of the stem 404 improves thermal conduction between the base 402 and the stem 404.

[0172] A heater coil 440 including multiple turns (e.g., more than three turns) is configured in a slot on the bottom surface of the second plate 412. The heater coil 440 is disposed (e.g., sandwiched) between the bottom surface of the second plate 412 and the top surface of the first plate 410. The turns of the heater coil 440 are radially distributed from the center of the second plate 412 to the OD of the second plate 412. In some examples, the turns of the heater coil 440 are uniformly distributed. Thus, the turns of the heater coil 440 are radially uniformly distributed from the center of the base 402 of the pedestal 400 to the OD of the base 402 of the pedestal 400. For example, the radial gap between adjacent turns of the heater coil 440 can be uniform. Thus, radial sections or regions of the base 402 can be uniformly heated to minimize temperature gradients and improve temperature uniformity radially across the base 402. Fig. 21B An example of a heater coil 440 having more than three turns (eg, four turns) is shown in FIG.

[0173] Although a heater coil 440 having more than three turns is shown as an example, in some examples, the pedestal 400 may also include a heater coil 440 having three turns or less, and the fourth turn and any additional turns may be optional. Fig.13 An example of a heater coil 440 having three turns is shown in FIG. 4 , which shows that a heater coil having additional (ie, more than three) turns is optional, such as by Fig.13 The fourth coil is indicated using a dotted line. Fig.21A An example of a heater coil 440 having three turns is shown.

[0174] The second plate 412 includes a circular slot in the top surface of the second plate 412. In some examples, the fifth plate 418 is integrated with the second plate 412 or the third plate 414. In some embodiments, the fifth plate 418 is arranged between the second plate 412 and the third plate 414 as a separate plate. For example, the fifth plate 418 can be inserted into the circular slot in the second plate 412. The bottom surface of the fifth plate 418 is brazed to the top surface of the second plate 412 in the circular slot in the second plate 412. The top surface of the fifth plate 418 is brazed to the bottom surface of the third plate 414. The top surface of the fifth plate 418 is flush with the top surface of the second plate 412 and the bottom surface of the third plate 414 (i.e., leveled or in the same plane). The diameter of the circular slot and the fifth plate 418 is smaller than the diameter of the edge gas groove 420 and the diameter of the substrate 417. The fifth plate 418 keeps the edge gas plenum and the pocket edge gas plenum (described below) separated (ie, separate and independent from each other), as explained in detail below.

[0175] Throughout this disclosure, the arrangements of various plates and inflatable portions in the base 402 are described in detail. However, these arrangements are non-limiting examples. For example, the plates and inflatable portions may be stacked differently than described. For example, one or more plates of the base 402 may be fused / integrated. For example, the position of one or more inflatable portions within the base 402 may be different than shown and described.

[0176] The top surface of the second plate 412, the bottom surface of the fifth plate 418, and the through holes 423 in the third plate 414 and the fourth plate 416 define an edge gas plenum 442. The edge gas grooves 420, the through holes 423 in the third plate 414 and the fourth plate 416, and the edge gas plenum 442 may be collectively referred to as the edge gas plenum 442. The diameters of the pitch circles of the edge gas grooves 420 and the through holes 423 are located inside the edge gas plenum 442. The through holes 423 open in the edge gas grooves 420 on the top surface of the fourth plate 416. The conduit 444 passes through the first plate 410 and partially through the second plate 412 and is connected to the edge gas plenum 442. The edge gas grooves 420, the through holes 423, the edge gas plenum 442, and the conduit 444 are in fluid communication with each other. The edge gas plenum 442 is referred to below as Figure 7 The edge gas trench 420, through hole 423, edge gas plenum 442, and conduit 444 may be referred to as a first trench 420, a first set of orifices, a first plenum 442, and a first conduit 444, respectively.

[0177] The top surface of the third plate 414, the bottom surface of the fourth plate 416, and the through-holes 446 define a sweep gas plenum 450. The sweep gas grooves 422, the through-holes 446, and the sweep gas plenum 450 may be collectively referred to as the sweep gas plenum 450. The through-holes 446 open in the sweep gas grooves 422 on the top surface of the fourth plate 416. The conduit 452 passes through the first plate 410, the second plate 412, and the fifth plate 418 and partially passes through the third plate 414 and is connected to the sweep gas plenum 450. The sweep gas grooves 422, the through-holes 446, the sweep gas plenum 450, and the conduit 452 are in fluid communication with each other.

[0178] The purge gas groove 422, through hole 446, purge gas plenum 450, and conduit 452 are separated from (i.e., not in fluid communication with) the edge gas groove 420, through hole 423, edge gas plenum 442, and conduit 444. The purge gas plenum 450 is referred to below as Fig. 9 The purge gas grooves 422, through holes 446, purge gas plenum 450, and conduit 452 may be referred to as second grooves 422, second set of orifices, second plenum 450, and second conduit 452, respectively.

[0179] The bottom surface of the third plate 414, the through-holes 460 in the third plate 414, and the corner holes 462 in the fourth plate 416 define a pocket edge gas plenum 466. In some examples, the corner holes 462 are bored through the fourth plate 416 and extend upward and radially outward at an acute angle relative to the z-axis through the fourth plate 416 and open into the pocket 430. In some examples, a gas conduit connecting the plenum to the corner holes 462 may extend vertically upward and radially outward from the plenum to connect to the corner holes 462. In some examples, one or more pockets 430 of the base 400 may each have one or more corner holes 462. In some examples, not all pockets may have corner holes 462. The through-holes 460, corner holes 462, and pocket edge gas plenums 466 may be collectively referred to as pocket edge gas plenums 466. The conduit 468 passes through the first plate 410, the second plate 412, and the fifth plate 418 and is connected to the pocket edge gas plenum 466. The corner holes 462, the through holes 460, the pocket edge gas plenum 466, and the conduit 468 are in fluid communication with each other.

[0180] Corner hole 462, through hole 460, pocket edge gas plenum 466, and conduit 468 are separated from (i.e., not in fluid communication with) through hole 423, edge gas plenum 442, and conduit 444. Corner hole 462, through hole 460, pocket edge gas plenum 466, and conduit 468 are also separated from (i.e., not in fluid communication with) through hole 446, purge gas plenum 450, and conduit 452. Fig. 9 Pocket edge gas plenum 466 is shown and described in more detail. Pocket edge gas plenum 466, corner holes 462, and conduit 468 may be referred to as third plenum 466, third set of orifices, and third conduit 468, respectively.

[0181] The clamping groove 424 on the top surface of the fourth plate 416, the through hole 470 in the fourth plate 416 (such as Figures 6A-6C 470 ), and the through hole 472 in the third plate 414 define a vacuum clamping gas filling portion. The clamping groove 424, the through hole 470, the through hole 472, and the clamping groove 424 are collectively referred to as a vacuum clamping gas filling portion, which is generally indicated by 472. A conduit 476 passes through the first plate 410, the second plate 412, and the fifth plate 418 and is connected to the through hole 472. The through hole 470, the through hole 472, the clamping groove 424, and the conduit 476 are in fluid communication with each other. Therefore, the conduit 476 is connected to the vacuum clamping gas filling portion 472. The following reference Figures 6A-6C 11A-11E show and describe the vacuum clamping plenum 472 in more detail. The vacuum clamping plenum 472 and the conduit 476 may be referred to as a fourth plenum 472 and a fourth conduit 476, respectively.

[0182] Through-hole 470, through-hole 472, clamping groove 424, and conduit 476 are separate (i.e., not in fluid communication) from corner hole 462, through-hole 460, pocket edge gas plenum 466, and conduit 468. Through-hole 470, through-hole 472, clamping groove 424, and conduit 476 are also separate (i.e., not in fluid communication) from edge gas groove 420, through-hole 423, edge gas plenum 442, and conduit 444. Through-hole 470, through-hole 472, clamping groove 424, and conduit 476 are also separate (i.e., not in fluid communication) from purge gas groove 422, through-hole 446, purge gas plenum 450, and conduit 452.

[0183] In addition, a pair of conduits 480, 482 pass through the stem 404 of the base 400 and through the first plate 410 and are connected to the heater coil 440. Power is supplied to the heater coil 440 through the conduits 480, 482, as described below with reference to Fig.26 The conduit 484 passes through the stem 404 of the base 400 and passes through the first plate 410 and the second plate 412 and partially passes through the fifth plate 418 and is connected to the fifth plate 418. The conduit 484 includes a temperature sensor (not shown) located at the end of the conduit 484 connected to the fifth plate 418 to sense the temperature of the base 400 (e.g., the temperature of the base 402 of the base 400). In some examples, the conduit 484 may pass through the fifth plate 418 and may contact the bottom surface of the third plate 414 or may be inserted into the bottom of the third plate 414. Figure 1 Conduits 406 collectively shown in include conduits 444 , 452 , 468 , 476 , 480 , 482 , and 484 .

[0184] Reference below Fig.26 The supply of various gases to various plenums during substrate processing is shown and described. Briefly, a first gas (e.g., an inert gas or a mixture of inert gas and hydrogen), also referred to as an edge gas, is supplied via a first plenum (i.e., edge gas plenum) 442. The edge gas improves edge uniformity along the edge (e.g., OD and bevel) of the substrate 417 during substrate processing.

[0185] A second gas (e.g., an inert gas), also referred to as a sweep gas, is supplied through a second plenum (i.e., a sweep gas plenum) 450. The second gas flows radially outward from below the substrate 417, which prevents deposition on the back side of the substrate 417 (i.e., the side of the substrate 417 that is located on the top surface of the fourth plate 416). The second gas also prevents process gas from diffusing onto the top surface of the fourth plate 416 below the substrate 417, thereby preventing deformation (e.g., fluorination) on the top surface of the fourth plate 416 that may be caused by diffusion.

[0186] A third gas (e.g., an inert gas or hydrogen), also referred to as an edge gas, is supplied through a third plenum (i.e., pocket edge gas plenum) 466. The third gas further improves edge uniformity along the edge (e.g., OD and bevel) of the substrate 417 during substrate processing. The second gas may also be heated to improve temperature uniformity and reduce cold spots in the region of the substrate 417 directly above the pocket 430.

[0187] To process the substrate 417, the substrate is placed on a susceptor 400 in a process chamber (see Fig.26 Before processing the substrate 417, the substrate 417 is clamped to the top surface of the fourth plate 416 of the susceptor 400. In order to clamp the substrate 417, a vacuum pump (such as Fig.26 ) by removing the gas from the process chamber through a fourth plenum (ie, the vacuum clamping plenum 472 described above) to exhaust the gas in the process chamber.

[0188] Due to the separate structures of the first, second, third and fourth gas-filled parts 442, 450, 466, 472 as described above, the gases flowing through each of the first, second, third and fourth gas-filled parts 442, 450, 466, 472 do not mix with each other. The first gas flowing through the first gas-filled part 442 does not mix with the gases flowing through each of the second, third and fourth gas-filled parts 450, 466, 472. The second gas flowing through the second gas-filled part 450 does not mix with the gases flowing through each of the first, third and fourth gas-filled parts 442, 466, 472. The third gas flowing through the third gas-filled part 466 does not mix with the gases flowing through each of the first, second and fourth gas-filled parts 442, 450, 472. The gas flowing through the fourth gas-filled part 472 does not mix with the gases flowing through each of the first, second and third gas-filled parts 442, 450, 466.

[0189] Figures 6A-6C A top view of the base 400 is shown. For ease of explanation, Figure 6A-9 All grooves in are shown as single lines. Each circular groove (e.g., edge gas groove 420, sweep gas groove 422, and concentric clamping groove 424) includes two concentric circles (e.g., see Fig.12 ) between the inner circle and the outer circle, wherein the inner diameter (ID) of the circular groove is defined and the outer diameter (OD) of the circular groove is defined. Each linear groove (e.g., Figure 7-9 The radial clamping grooves 424 shown and the linear or spoke-shaped grooves) include grooves arranged between two parallel lines extending together (e.g., see Fig.11A ).exist Figure 6A-25B In the description of FIG. 4 and FIG. 5 , elements shown with the same reference numerals as those in FIGS. 4 and 5 that have been described with reference to FIGS. 4 and 5 will not be described again for the sake of brevity.

[0190] Fig. 6A A top view (i.e., top surface) of the fourth plate 416 of the base 400 is shown. In particular, the layout of the grooves 420, 422, 424 on the top surface of the fourth plate 416 is shown. The diameters of the grooves 420, 422, 424 have been referenced above. Figure 4A has been described, and therefore will not be described again for the sake of brevity. Figures 11A-11C The clamping groove 424 near the central portion 419 of the top surface of the fourth plate 416 identified by the dashed rectangle is shown in detail in FIG. Figure 6B , 6C 11A shows a through hole 470 in the clamping groove 424 near the central area of ​​the top surface of the fourth plate 416.

[0191] exist Fig. 6A In order to reduce the cold spots on the substrate 417 caused by the pocket 430, the radially inner end of the slot 432 is recessed radially outward. The purge gas groove 422 and the outermost circular clamping groove 424 include radially inner fillet portions 434-1, 434-2 configured opposite to the radially inner end of the slot 432. The ID of the edge gas groove 420 is increased to reduce the overhang of the substrate 417 on the slot 432 in the pocket 430, which improves the non-uniformity at the edge of the substrate. The edge gas groove 420 intersects with the radially inner end of the slot 432. At least one through hole 423 in the edge gas groove 420 is located in the radially inner end of the slot 432 (at Fig. 9 more clearly seen in ).

[0192] Figure 6B A bottom view (ie, bottom surface) of the fourth plate 416 is shown. Figure 5 The through hole 446 (shown as 450 in FIG. 1 ) and the gas inflation portion at the edge of the bag portion (shown as 450 in FIG. 1 ) Figure 5 Corner holes 462 (shown as 466 in FIG. 4 ) are visible on the bottom surface of the fourth plate 416. Through holes 470 of the vacuum clamping inflatable portion 472 are also visible on the bottom surface of the fourth plate 416. Figure 6C The through hole 470 is shown in more detail in FIG.

[0193] Instead of a single set of through holes formed in a cutout on the top surface of the fourth plate 416 (see Fig. 14B ), which may create a cold spot on the substrate 417 in the area above the cutout, the fourth plate 416 includes at least two groups of through holes 470, such as Figure 6C As shown. The through hole 470 is set directly in the clamping groove 424, rather than in the cutout. Eliminating the cutout eliminates the corresponding cold spot. Figures 11A-11C The layout of the through holes 470 within the corresponding clamping grooves 424 as well as other features such as the width, depth, and rounding of the clamping grooves 424 are shown and described in more detail.

[0194] Figure 7 A top view (ie, top surface) of the second plate 412 of the base 400 is shown. The second plate 412 includes five through holes 490, 492, 494, 496, 498, five conduits 444, 452, 468, 476, 484 (see Figure 5 ) pass through these through holes. Figure 5 The fifth plate 418 is formed by an annular groove 421 and a plurality of radial grooves 425 in the top surface of the second plate 412 (shown as 442 in FIG. 1 ). The ID of the annular groove 421 is equal to the diameter of the fifth plate 418. The fifth plate 418 is placed on top of the ID of the annular groove 421 and covers the radial grooves 425. The radial grooves 425 connect the through hole 490 to the annular groove 421. The edge gas flows from the conduit 444 through the through hole 490, through the radial grooves 425, through the annular groove 421, through the through hole 423 (at Figure 5 416 ) into edge gas grooves 420 on the top surface of fourth plate 416 .

[0195] Figure 8 The bottom view (ie, bottom surface) of the third plate 414 is shown. The bottom surface of the third plate 414 includes three through holes 492, 494, 496, three conduits 452, 468, 476 (see Figure 5 ) pass through these through holes respectively. The gas filling part at the edge of the bag (at Figure 5 466) is formed by a plurality of radial grooves 427 and through holes 460 connected to the corner holes 462 in the fourth plate 416 (see Figure 5 ). The radial groove 427 connects the through hole 494 to the through hole 460.

[0196] The diameter of the fifth plate 418 is larger than the diameter of the pitch circle of the through hole 460 (ie, the circle where the through hole 460 is located) and smaller than the diameter of the edge gas groove 420 (see Figure 5 ). Thus, the top surface of the fifth plate 418 completely or entirely covers the pocket edge gas plenum 466. Thus, the fifth plate 418 separates the pocket edge gas plenum 466 from the edge gas plenum 442 formed in the second plate 412, as described above with reference to Figure 7 Edge gas flows from conduit 468 through through hole 494, through radial groove 427, through through hole 460, through corner hole 462 (see Figure 5 ) and enter the bag portion 430.

[0197] Fig. 9A top view (i.e., top surface) of the third plate 414 is shown. The top surface of the third plate 414 includes through holes 492, 496 through which the conduits 452, 476 pass, respectively. Figure 5 The fourth plate 416 is formed of a first plurality of radial grooves 433, an annular groove 431, and a second plurality of radial grooves 429. The second plurality of radial grooves 429 includes a greater number of grooves than the first plurality of radial grooves 433. The first plurality of radial grooves 433 connects the through hole 492 to the annular groove 431. The first end of the second plurality of radial grooves 429 is connected to the annular groove 431. The second end of the second plurality of radial grooves 429 is connected to the through hole 446 (see FIG. 446 ) in the fourth plate 416. Figure 5 ). The purge gas flows out of the conduit 444, flows through the through hole 492, flows through the first plurality of radial grooves 433, flows through the annular groove 431, flows through the second plurality of radial grooves 429, and flows through the through hole 446 (at Figure 5 416 ) and enters the purge gas groove 422 on the top surface of the fourth plate 416 .

[0198] Fig.10 The top view and bottom view of the fifth plate 418 are shown, which are identical. The fifth plate 418 includes four through holes 492, 494, 496, 498, four conduits 452, 468, 476, 484 (see Figure 5 ) pass through these through holes respectively. In some examples, the temperature sensor can be embedded in the fifth plate 418, in which case the element 498 may not be a through hole partially drilled into the bottom surface of the fifth plate 418, and the conduit 484 can terminate in the through hole 498 partially drilled into the fifth plate 418.

[0199] The first plate 410 includes seven through holes (see Figure 5 ). Conduits 444, 452, 468, 476, 480, 482, 484 pass through the through hole in the first plate 410 and through the other plates as described above. Conduit 476 passes through through hole 496 in the first plate 410, the second plate 412, and the fifth plate 418 and connects to through hole 472 in the third plate 414, and is connected to the clamping groove 424 via through hole 470 in the fourth plate 416. A vacuum pump (such as Fig.26 470, through hole 472, and conduit 476 to exhaust the gas in the processing chamber.

[0200] Figures 11A-11D The clamping groove 424 and the through hole 470 in the clamping groove are shown in more detail. Figures 6A-6C As mentioned above and Fig.11AAs shown, the through hole 470 is not located in the cutout formed at the intersection of the radial clamping grooves 424 near the central area of ​​the top surface of the fourth plate 416, as shown in FIG. Fig. 14B In contrast, the through hole 490 is disposed in the radial clamping groove 424 at the intersection of the radial clamping grooves 424 near the central region of the top surface of the fourth plate 416, as shown in FIG. Figure 6C and 11A shown.

[0201] Furthermore, the through holes 470 are arranged in multiple rows in the radial clamping groove 424, such as Figure 6C and 11A As shown (for example, two rows are shown, but more rows may be added). The through holes 470 of each row are located on a circle. Therefore, the through holes 470 of these rows are located on respective concentric circles. The through hole 490 is located at the intersection of the radial clamping grooves 424 near the central area of ​​the top surface of the fourth plate 416, because the conduit 476 is connected to the through hole 470 via the through hole 472 in the third plate 414 located below the through hole 470 (see Figure 5 ). The through hole 470 is not located in any of the clamping grooves 424, which is different from Fig.11A shown.

[0202] Fig. 11B The clamping groove 424 ( Fig. 6A The radial and circular clamping grooves 424 shown have a width w that is smaller than the clamping grooves 424 ( Fig. 6A The depth d of the radial and circular clamping grooves 424 shown in FIG. 4A . The narrow width of the clamping grooves 424 reduces cold spots on the substrate 417 that may be caused by the clamping grooves 424. The depth of the clamping grooves 424 allows multiple rows of through holes 470 to be provided in the clamping grooves 424. Figure 6C and Fig.11A The through hole 470 provided in the clamping groove 424 is provided Fig. 14B Compared with the through holes 470 in the circular cutout shown in FIG. 1 , the diameter is smaller but the number is greater. Figure 6C and Fig.11A The through hole 470 in the clamping groove 424 shown provides a clamping force that is similar to that provided by the Fig. 14B The clamping force is not reduced compared to that provided by the circular cutouts shown to provide the through holes 470. Instead, the clamping force can be increased by adding more rows of through holes 470. In addition, by eliminating the cutouts for providing the through holes 470 and by reducing the width of the clamping grooves, the cold spots on the substrate 417 are minimized.

[0203] Fig. 11C The clamping groove 424 ( Fig. 6AThe radial and circular clamping grooves 424 shown are also rounded at the outer edges as shown at 477. The rounding of the clamping grooves 424 provides additional advantages. Fig.11D As shown, when the process gas diffuses under the substrate 417, the material produced by the chemical reaction between the diffused process gas (e.g., which includes a corrosive halogen) and the metal material of the top surface of the fourth plate 416 forms a deposit that accumulates over time, as shown at 478. Fig. 11C As shown with rounded corners, the deposits grow above the plane of the top surface of the fourth plate 416, as shown at 478. Due to the growth of the deposits, a gap exists between the bottom surface of the substrate 417 and the top surface of the fourth plate 416, as shown at 481. The gap allows more process gas to diffuse under the substrate 417, which in turn causes more material deposition and deposits, which further increases the gap between the bottom surface of the substrate 417 and the top surface of the fourth plate 416. As a result, the substrate 417 cannot be properly clamped to the top surface of the fourth plate 416, which causes process non-uniformity and temperature non-uniformity in the substrate 417.

[0204] On the contrary, when the clamping groove 424 is Fig. 11C When the process gas diffuses below the substrate 417, the deposits grow below the plane of the top surface of the fourth plate 416, as shown in FIG. Fig.11E As shown at 483 in FIG. Due to the growth of the deposit below the plane of the top surface of the fourth plate 416, there is a gap between the deposit and the top surface of the fourth plate 416, as shown in FIG. Fig.11E Due to the gap between the deposit and the top surface of the fourth plate 416, the bottom surface of the substrate 417 can contact the top surface of the fourth plate 416, and the substrate 417 can be properly clamped to the top surface of the fourth plate 416, which improves process uniformity and temperature uniformity in the substrate 417.

[0205] In some examples, the radius of the rounded edge of the clamping groove 424 as shown at 477 can be as high as 0.04". Moreover, this larger radius helps prevent process variations caused by surface irregularities caused by excessive fluorination (etching) of the top surface of the fourth plate 416 of the base 400.

[0206] Fig.12The spacing between the edge gas trench 420 and the sweep gas trench 422 is shown, as well as the radially inner end of the pocket 430 and the protrusion 436 of the carry ring and substrate holder assembly 438 disposed in the slot 432 of the pocket 430. In particular, the ID of the edge gas trench 420 is increased to minimize substrate overhang, as described above. In addition, the slot 432 of the pocket 430 and the protrusion 436 of the carry ring and substrate holder assembly 438 are recessed radially outward to minimize cold spots that may be caused by the pocket 430, as described above. In particular, the inner end of the pocket 430 and the protrusion 436 of the carry ring and substrate holder assembly 438 are closer to the ID of the edge gas trench 420 than to the OD of the sweep gas trench 422.

[0207] For example, the radial distance between the radial inner edge of the slot 432 and the ID of the edge gas trench 420 is d1. The radial distance between the radial inner edge of the protrusion 436 and the ID of the edge gas trench 420 is d2. The radial distance between the radial inner edge of the slot 432 and the OD of the purge gas trench 422 is d3. The radial distance between the radial inner edge of the protrusion 436 and the OD of the purge gas trench 422 is d4. d1 < d3, and d2 < d4. Therefore, the protrusion 436 of the carry ring and substrate holder assembly 438 and the inner end of the pocket 430 are closer to the ID of the edge gas trench 420 than to the OD of the purge gas trench 422.

[0208] Fig.13 , 14A and Fig. 14B Another example of a base 500 is shown. Fig.13 A cross-sectional view of the base 500 is shown. The base 500 is the same as the base 400 shown in Figures 4-12 except for the following differences. Therefore, for the sake of brevity, other elements of the base 500 will not be described in detail except for the following differences.

[0209] The pedestal 500 differs from the pedestal 400 primarily in that, unlike the pedestal 400 in which the edge gas plenum 442 and the pocket edge gas plenum 466 are separate, the edge gas plenum 442 and the pocket edge gas plenum 466 are not separate in the pedestal 500. Rather, the edge gas plenum 442 and the pocket edge gas plenum 466 are in fluid communication with each other and are a single, united, or shared plenum in the pedestal 500. Thus, the pedestal 500 does not include the fifth plate 418 that separates the edge gas plenum 442 from the pocket edge gas plenum 466 in the pedestal 400, as shown in FIG. Figure 5Thus, in the base 500, the bottom surface of the third plate 414 does not include the pocket edge gas plenum 466 and is flat. The base 500 also does not include a conduit 468 for independently supplying edge gas to the pocket edge gas plenum 466 in the base 400, as shown. Figure 5 In contrast, in susceptor 500 , conduit 444 supplies edge gas to edge gas groove 420 via through hole 423 and to pocket 430 via corner hole 462 .

[0210] Furthermore, in the base 500, in some examples, the heater coil 440 may include three or more turns, such as Figure 5 As shown. Fig.13 In the example shown, heater coil 440 having additional (ie, more than three) turns is optional, as indicated by the use of dashed lines to show the fourth coil. Fig.13 As shown, the base 500 includes a heating coil 440 having three turns, an example of which is shown in FIG. Fig.21A In some examples, the base 500 may include a heating coil 440 having four turns, an example of which is shown in FIG. Fig. 21B The heater coils 440 - 1 and 440 - 2 are collectively referred to as heater coils 440 .

[0211] Fig.14A A top view of the fourth plate 416 of the base 500 is shown. The top view of the fourth plate 416 of the base 500 is the same as the top view of the fourth plate 416 of the base 400 except for the following differences. Unlike the fourth plate 416 of the base 400, the fourth plate 416 of the base 500 also includes ceramic springs (collectively referred to as springs 502) as shown as 502-1, 502-2, and 502-3. As shown, the ceramic springs 502 are arranged around the circumference of the middle circular clamping groove 424. Similar to the pocket 430, the ceramic springs are arranged to be 120 degrees apart from each other. In some examples, the ceramic springs 502 are radially aligned with the pocket 430 as shown, but the ceramic springs 502 can be arranged differently than shown. In some examples, the ceramic springs 502 can be omitted in the base 500 because the cold spots may be caused by the ceramic springs 502 in the substrate 417.

[0212] Fig. 14B Another feature of the base 500 that is different from the base 400 is shown. Unlike the base 400, the fourth plate 416 does not include Figure 6C and 11A As shown for the circular cutouts of the through holes 470, the fourth plate 416 of the base 500 includes circular cutouts as shown at 504-1, 504-2 (collectively referred to as circular cutouts 504). Fig. 14B4 shows an enlarged view of the central portion 499 of the fourth plate 416. In the cutout 504-1, a single set of through holes 470 is arranged along the circumference of the cutout 504-1. Alternatively, the through holes 470 can be arranged within the circumference of the cutout 504-1. In some examples, the circular cutout 504 can be omitted in the base 500 because the cold spot may be caused by the circular cutout 504 in the substrate 417.

[0213] In some examples, pedestal 500 may include any combination of the following features, as well as a shared plenum (without fifth plate 418) for supplying edge gas to edge gas trench 420 via through holes 423 and to pocket 430 via corner holes 462, or a separate plenum (with fifth plate 418) for supplying edge gas to edge gas trench 420 via through holes 423 and to pocket 430 via corner holes 462: Fig.21A or the heating coil 440 shown in 21B, a ceramic spring 502 or no ceramic spring 502, having Fig. 14B The circular cutout 504 of the single set of through holes 470 shown or as Figure 6C and 11A The plurality of through holes 470 are shown without the circular cutouts 504, and Figures 11A-11E The non-rounded or rounded clamping groove 424 is shown.

[0214] Figure 15-17 Additional examples of bases 600 and 700 are shown. Fig.15 and Fig.16 Cross-sectional views of bases 600 and 700 are shown respectively. Fig.17 A top view of the fourth plate 416 for the bases 600 and 700 is shown. The bases 600 and 700 may have the same or similar features as the base 400 described and shown with reference to Figures 4-12, except for the following differences. Therefore, for the sake of brevity, other elements of the bases 600 and 700 will not be described in detail.

[0215] exist Fig.15 In the embodiment of the present invention, the susceptor 600 differs from the susceptor 400 primarily in that, unlike the susceptor 400, the susceptor 600 does not supply the purge gas via the purge gas groove 422. Instead, the edge gas is supplied to the pocket 430 using the purge gas plenum 450, which is operated as shown in FIG. Figure 5 The base 600 shown is implemented by the pocket edge gas filling portion 466 in the base 400. Therefore, the base 600 does not include the reference Figure 5 Corresponding elements 422, 446, 429 and 452 of base 400 are described and shown. Fig.15 The pocket edge gas inflation portion 466 is shown with Figure 5 The purge gas plenum 450 shown is identical without Figure 5Elements 422, 446, 429 and 452 of base 400 are shown and further modified as follows to operate as pocket edge gas inflation portion 466.

[0216] In particular, in the base 600, the pocket edge gas filling portion 466 (i.e., Figure 5 The purge gas plenum 450 shown in FIG. Figure 5 The elements 422, 446, 429 and 452 of the base 400 shown in FIG. 4 are modified to be as follows Figure 5 The pocket edge gas filling portion 466 of the base 400 is shown to operate. In the base 600, the conduit 468 extends through the first plate 410 and the second plate 412, as shown in FIG. Figure 5 The base 400 shown in FIG. 400 further extends partially through the third plate 414, as shown in FIG. Fig.15 As shown. The conduit 468 is connected to the Figure 5 4, which is the purge gas filling section 450 in the base 400, which is the bag edge gas filling section 466 in the base 600. Therefore, in the base 600, as shown in FIG. Figure 5 The pocket edge gas filling portion 466 and through hole 460 are eliminated and replaced by Figure 5 The purge gas charging section 450 shown is Fig.15 The bag edge gas filling section 466 is connected to the corner hole 462 and supplies edge gas to the Fig.15 The pocket 430 in the base 600 is shown. Figure 5 The pocket edge gas filling portion 466 and the through hole 460 are shown in Fig.15 was deleted in Fig.15 In the illustrated base 600 , the base 600 also does not include the fifth plate 418 , and the bottom surface of the third plate 414 is flat.

[0217] Therefore, the base 600 does not include Figure 5 The bag edge gas filling portion 466 of the base 400 shown is replaced by, Figure 5 The purge gas plenum 450 shown is modified as described above and is used as Fig.15 The pocket edge gas plenum 466 in the base 600 shown and as described above. Therefore, the pocket edge gas plenum 466 of the base 600 may also be referred to as the pocket edge gas plenum 466 / 450 or the pocket edge gas plenum 466' / 450', where "'" indicates relative to the above and Fig.15 The base 400 is shown with modifications to the inflatable portions 450 and 466 in the base.

[0218] Furthermore, in the base 600, in some examples, the heater coil 440 may include three or more turns, such as Figure 5Display. Fig.15 In the example shown, heater coil 440 having additional (ie, more than three) turns is optional, as indicated by the use of dashed lines to show the fourth coil. Fig.15 As shown, the base 600 includes a heater coil 440 having three turns, an example of which is shown in FIG. Fig.21A In some examples, the base 600 may include a heater coil 440 having four turns, an example of which is shown in Fig. 21B Displayed in.

[0219] exist Fig.16 , susceptor 700 differs from susceptor 400 primarily in that, unlike susceptor 400 in which edge gas plenum 442 and pocket edge gas plenum 466 are separate, edge gas plenum 442 and pocket edge gas plenum 466 of susceptor 700 are in fluid communication with each other and are a single united or shared edge gas plenum 442 in susceptor 700. Thus, susceptor 700 does not include fifth plate 418, which separates separate edge gas plenum 442 from pocket edge gas plenum 466 in susceptor 400, as shown in FIG. Figure 5 Thus, in the base 700, the bottom surface of the third plate 414 does not include the pocket edge gas plenum 466 and is flat. The base 700 also does not include a conduit 468 for independently supplying edge gas to the pocket edge gas plenum 466 in the base 400, as shown. Figure 5 In contrast, in susceptor 700 , conduit 444 supplies edge gas to edge gas groove 420 via through hole 423 and to pocket 430 via corner hole 462 .

[0220] In addition, the susceptor 700 differs from the susceptor 400 primarily in that, unlike the susceptor 400, the susceptor 700 does not include a purge gas plenum 450 to supply purge gas through the purge gas groove 422. Figure 5 Elements 422, 446, 429, 433, 450, and 452 of susceptor 400 are shown. In addition, in susceptor 700, since the top surface of third plate 414 does not include purge gas plenum 450, the top surface of third plate 414 is also flat.

[0221] Furthermore, in the base 700, in some examples, the heater coil 440 may include three or more turns, such as Figure 5 As shown. Fig.16 In the example shown, heater coil 440 having additional (ie, more than three) turns is optional, as indicated by the use of dashed lines to show the fourth coil. Fig.16 As shown, the base 700 includes a heater coil 440 having three turns, an example of which is shown in FIG. Fig.21A In some examples, the base 700 may include a heater coil 440 having four turns, an example of which is shown in FIG. Fig. 21B Displayed in.

[0222] Fig.17 Display for Fig.15 and 16 The top view of the fourth plate 416 for the bases 600 and 700 is shown in FIG. 1 . The top view of the fourth plate 416 for the bases 600 and 700 is the same as FIG. 1 except for the following differences: Figures 6A-6C The top view of the fourth plate 416 of the base 400 shown in FIG. 6 is the same. The fourth plate 416 of the bases 600 and 700 does not include the purge gas groove 422 and the corresponding through hole 446. In addition, the edge gas groove 420 and the outermost circular clamping groove 424 do not include the fillet portions 434-1, 434-2 disposed opposite the radial inner end of the slot 432.

[0223] Although the through hole 470 in the fourth plate 416 for the bases 600 and 700 is Figures 11A-11C As shown, however, in some examples, the through hole 470 may be as Fig. 14B 466) for the edge gas trenches 420 via through holes 423 and to the pockets 430 via corner holes 462; or separate plenums for supplying edge gas to the edge gas trenches 420 via through holes 423 and to the pockets 430 via corner holes 462 (still without the fifth plate 418, as the purge gas plenum 450 serves as the pocket edge gas plenum 466): Fig.21A or the heater coil 440 shown in 21B, the ceramic spring 502 or the ceramic spring 502-free, as shown in Fig. 14B The circular cutout 504 shown has a single set of through holes 470 or as shown Figure 6C and Fig.11A The plurality of through holes 470 are shown without the circular cutouts 504, and Figures 11A-11E The clamping groove 424 is shown with non-radial or radiused corners.

[0224] Fig.18 Another example of a base 800 is shown. The base 800 may have the same or similar features as the base 400 shown and described with reference to Figures 4-12, except for the following differences. Therefore, for the sake of brevity, other elements of the base 800 are not described again.

[0225] The base 800 differs from the base 400 mainly in that, unlike the base 400, the base 800 does not include the pocket edge gas filling portion 466. Therefore, in the base 800, the bottom surface of the third plate 414 does not include the pocket edge gas filling portion 466 and is flat. In addition, the base 800 also does not include Figure 5 Components 466, 460, 462, and 468 of the base 400 are shown. In addition, the base 800 also does not include the fifth plate 418, which separates the separated edge gas filling portion 442 from the pocket edge gas filling portion 466 in the base 400, as shown in FIG. Figure 5 shown.

[0226] Additionally, in the base 800, in some examples, the heater coil 440 may include more than three turns, such as Figure 5 As shown. Fig.18 In the example shown, heater coil 440 having additional (ie, more than three) turns is optional, as indicated by the use of dashed lines to show the fourth coil. Fig.18 As shown, the base 800 includes a heater coil 440 having three turns, an example of which is shown in FIG. Fig.21A In some examples, the base 800 may include a heater coil 440 having four turns, an example of which is shown in FIG. Fig. 21B It is shown as 440-2.

[0227] A top view of the fourth plate 416 of the base 800 and Fig. 6A The top view of the fourth plate 416 of the base 400 is shown to be the same. In some examples, the base 800 can include any combination of the following features: Fig.21A or the heater coil 440 shown in 21B, the ceramic spring 502 or the ceramic spring 502-free, as shown in Fig. 14B The circular cutout 504 shown has a single set of through holes 470 or as shown Figure 6C and Fig.11A The plurality of through holes 470 shown without the circular cutout 504, and the Figures 11A-11E The clamping groove 424 is shown with non-radiused or radiused corners.

[0228] Fig.19 Another example of a base 900 is shown. The base 900 may have the same or similar features as the base 400 shown and described with reference to Figures 4-12, except for the differences described below. Therefore, for the sake of brevity, other elements of the base 900 will not be described again, except for the differences described below.

[0229] The main difference between the base 900 and the base 400 is that, unlike the base 400, the base 900 does not include the bag edge gas filling part 466 and the purge gas filling part 450. Therefore, the base 900 does not include the third plate 414 and the fifth plate 418. In addition, the base 900 also does not include Figure 5 The components 466, 460, 462 and 468 of the base 400 are shown. In addition, the base 800 also does not have a reference Figure 5 Elements 450 , 429 , 433 , 446 , 422 , and 452 of base 400 are described and shown.

[0230] Furthermore, in the base 900, in some examples, the heater coil 440 may include three or more turns, such as Figure 5 As shown. Fig.19 In the example shown, heater coil 440 having additional (ie, more than three) turns is optional, as indicated by the use of dashed lines to show the fourth coil. Fig.19 As shown, the base 900 includes a heater coil 440 having three turns, an example of which is shown in FIG. Fig.21A In some examples, the base 900 may include a heater coil 440 having four turns, an example of which is shown in Fig. 21B Displayed in.

[0231] A top view of the fourth plate 416 of the base 900 and Fig.17 The top view of the fourth plate 416 of the bases 600 and 700 is shown to be the same. In some examples, the base 900 can include any combination of the following features: Fig.21A or the heater coil 440 shown in 21B, the ceramic spring 502 or the ceramic spring 502-free, as shown in Fig. 14B The circular cutout 504 shown has a single set of through holes 470 or as shown Figure 6C and Fig.11A The plurality of through holes 470 are shown without the circular cutouts 504, and Figures 11A-11E The non-radial or radiused clamping groove 424 is shown.

[0232] Fig. 20A and 20B A side front view of pocket 430 is shown. Fig. 20A Pocket 430 is shown for bases 400 , 500 , 600 , 700 , and 800 . Fig. 20B A pocket 430 is shown for the base 900. Fig. 20A and 20B In FIG. 1 , the location where the plates are brazed together is identified as brazing interface 1000 .

[0233] As described above, each pocket 430 includes a slot 1002 in which a nut plate and a washer (both in Fig.22AFasteners (such as Fig.22A 1004 is inserted into the pocket 430 (as shown) through the orifice 1004 Fig.22A ) in a wheel seat assembly to secure the wheel seat assembly to the base by engaging with a nut plate in a slot 1002 in the bag portion 430.

[0234] like Fig. 20A and 20B As shown, in each pocket 430, a slot 1002 is formed in the radial outer wall of the pocket 430. The slot 1002 is positioned away from the brazing interface 1000 of a plurality of plates 412-416 so that the slot 1002 is not located at any one of the brazing interfaces 1000. No brazing interface 1000 intersects with the slot 1002. The slot 1002 does not include any brazing interface 1000. Instead, the slot 1002 is located between the brazing interfaces 1000 of adjacent plates. The slot 1002 is completely formed within the thickness of one of the plates 412-416. The height of the slot 1002 is less than the thickness of one of the plates 412-416 in which the slot 1002 is formed. Therefore, the larger surface area of ​​the plate can be used to braze the plate, which results in an increased bonding strength between the plates. Furthermore, when the gasket expands, the mechanical force generated by the expansion is less than the bonding force holding the panels together, thereby preventing delamination of the pocket 430 .

[0235] Fig.21A and 21B An example of a heater coil 440 is shown. Fig.21A An example of a heater coil 440 having three turns is shown at 440 - 1 . Fig.21B An example of a heater coil 440 having four turns is shown at 440-2. Throughout this disclosure, heater coils 440-1 and 440-2 are collectively referred to as heater coil 440. In some examples, heater coil 440 may include additional turns. The heater coil includes a first end and a second end, and conduits 480, 482 are connected to the first end and the second end, respectively. Power is supplied to heater coil 440 via conduits 480, 482, as described below with reference to Fig.26 Based on the number of turns of the heater coil 440, the bottom surface of the second plate 412 includes a groove (not shown) in which the heater coil 440 is arranged.

[0236] Fig.22A and 22B An example of a wheel base assembly 1050 and a carrier ring and substrate holder assembly 438 is shown. Fig.22A, the wheel seat assembly 1050 is arranged in the slot 432 of the bag portion 430. The wheel seat assembly 1050 includes wheels 1054-1, 1054-2. A plurality of (e.g., three) carrier rings and substrate holder assemblies 438 are attached to the bottom surface of the carrier ring 1051. When the carrier substrate 417 (e.g., see Figure 5 ) is loaded onto the base, the carrier ring and substrate holder assembly 438 is inserted into the wheel base assembly 1050. The wheels 1054-1, 1054-2 hold the carrier ring and substrate holder assembly 438 in the wheel base assembly 1050.

[0237] exist Fig. 22B , the carrier ring and substrate holder assembly 438 includes a substrate holder (also referred to as a contact finger) 437 extending radially inward from the pocket 430. The contact finger 437 includes a protrusion 436 for supporting the substrate 417 and a centering wheel 439 for centering the substrate 417 on the base. The wheel seat assembly 1050 is fastened to a nut plate 1058 in the pocket 430 using a fastener 1056 that passes through an aperture 1004 in the wheel seat assembly 1050. A washer 1060 is used with the fastener 1056 and the nut plate 1058. The nut plate 1058 is inserted into the slot 1002 located at the base of the pocket 430. The location of the slot 1002 and the advantages provided by the location of the slot 1002 have been described above with reference to FIG. Fig. 20A and 20B is described and therefore will not be repeated for the sake of brevity.

[0238] Figures 23A-25B An example of the arrangement of the conduit 406 in the stem 404 of some of the bases described above is shown. Fig.23A and 23B The arrangement of conduits 444 , 452 , 468 , 476 , 480 , 482 , 484 of base 400 is shown. Fig.23A A cross-sectional view of the stem 404 of the base 400 is shown with a conduit positioned within the stem 404 of the base 400 . Fig. 23B A perspective view of the stem portion 404 of the base 400 is shown.

[0239] exist Fig.23A and 23B In the embodiment of the present invention, the conduits 444, 452, 468, 476, 484 are arranged to pass through the narrow opening 1102 at the bottom end of the stem portion 404 of the base 400, as shown. As described below, the heater conduits 480, 482 do not extend through the opening 1102. Instead, only the conductors 480-1, 482-1 of the heater coil 440 within the heater conduits 480, 482 extend through the opening 1102. The opening 1102 of the stem portion 404 of the base 400 is similar to that of the base 400, which uses fewer conduits than the base 400. Fig.24A and 24BThe openings 1102 of the stem 404 of the base 500 are shown to be identical. Thus, a greater number of conduits are disposed through the openings 1102 in the stem 404 of the base 400 than the number of conduits disposed through the same openings 1102 in the stem 404 of the base 500.

[0240] In some examples, in order to accommodate a greater number of conduits within the opening 1102 in the stem 404 of the base 400 without increasing the size of the opening 1102, the conduits 480, 482 are shorter than the other conduits and do not pass through the opening 1102 and exit the bottom end of the stem 404. Instead of the conduits 480, 482, only the conductors 480-1, 482-1 of the heater coil 440 within the conduits 480, 482 through which power is supplied to the heater coil 440 (see Fig.23A and 23B ) exits the bottom end of the rod 404 through opening 1102 and is connected to a power source. Outside the conduits 480, 482, the conductors 480-1, 482-1 are electrically insulated with insulating material so as not to short circuit with the rod 404 or other components of the substrate processing system. The insulating material can withstand high thermal and mechanical stresses and can also withstand harsh process chemicals. The rod 404 includes an opening 1100 for a fastener (not shown), which the rod 404 uses to attach to other components of the substrate processing system.

[0241] Fig.24A and 24B The arrangement of conduits 444 , 452 , 476 , 480 , 482 , 484 of base 500 is shown. Fig.24A A cross-sectional view of the stem 404 of the base 500 is shown with a conduit positioned within the stem 404 of the base 500 . Fig. 24B A perspective view of the stem 404 of the pedestal 500 is shown. The conduits 444, 452, 480, 482, 484, 476 are arranged through a narrow opening (e.g., a cutout) 1102 at the top end of the stem 404 of the pedestal 500, as shown. The conductors 480-1, 482-1 of the heater coil 440 are shown, and power is supplied to the heater coil 440 through the conductors 480-1, 482-1. The stem 404 includes an opening 1100 for a fastener (not shown), with which the stem 404 is attached to other components of the substrate processing system.

[0242] Fig.25A and 25B The arrangement of conduits 444 , 476 , 480 , 482 , 484 of base 900 is shown. Fig.25A A cross-sectional view of the stem 404 of the base 900 is shown with a conduit positioned within the stem 404 of the base 900 . Fig.25BA perspective view of the stem 404 of the base 500 is shown. The conduits 444, 480, 482, 484, 476 are disposed through a narrow opening (e.g., a cutout) 1102 at the top end of the stem 404 of the base 900, as shown. The stem 404 includes an opening 1100 for a fastener (not shown) with which the stem 404 is attached to other components of the substrate processing system.

[0243] Fig.26 An example of a substrate processing system 1200 is shown in which any of the above-described pedestals may be used. The substrate processing system 1200 includes a station (also referred to as a process module) 1212 in which a substrate is processed. Although only one station 1212 is shown as an example, the substrate processing system 1200 may include multiple stations 1212. Each station 1212 may use any of the above-described pedestals. For example, a substrate may be processed sequentially in the station 1212. Different processes may be performed on the substrate in different stations using different of the above-described pedestals, such as atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma enhanced ALD (PEALD), plasma enhanced CVD (PECVD), and the like.

[0244] The station 1212 includes a pedestal 1214 and a showerhead 1216. The pedestal 1214 can be any of the pedestals described above. The pedestal 1214 includes a base 1218 (e.g., the base 402 described above) and a stem 1220 (e.g., the stem 404 described above). The stem 1220 extends from the base 1218 and is coupled to the bottom of the station 1212. During processing, a substrate 1224 (e.g., the substrate 417 described above) is disposed on the top surface of the base 1218 of the pedestal 1214.

[0245] The showerhead 1216 includes a base 1226 and a stem 1228. The base 1226 of the showerhead 1216 is cylindrical. The stem 1228 of the showerhead 1216 extends from the base 1226 of the showerhead 1216. The stem 1228 of the showerhead 1216 is attached to the top plate of the station 1212. The stem 1228 of the showerhead 1216 receives various gases (e.g., process gases, vaporized precursors, purge gases, cleaning gases, etc.) from the gas delivery system 1250 via the manifold 1252. The base 1226 of the showerhead 1216 includes a panel that includes through holes or slots (not shown) through which gases are introduced into the station 1212.

[0246] The substrate processing system 1200 includes a gas delivery system 1250. The gas delivery system 1250 includes a gas source 1254, a valve 1256, and a mass flow controller (MFC) 1258. The gas source 1254 supplies various gases, such as process gas, inert gas (also known as sweep gas, edge gas, carrier gas), cleaning gas, etc. The valve 1256 is connected to the gas source 1254 and can be controlled to supply gas to the MFC 1258. The MFC 1258 regulates the flow of gas to the manifold 1252.

[0247] Additionally, the substrate processing system 1200 includes another delivery system configured to deliver vaporized precursors via respective valves, collectively shown as vaporized precursor and valve 1251. The vaporized precursor and valve 1251 delivers the vaporized precursor to a manifold 1252. The manifold 1252 supplies a gas or gas mixture to the showerhead 1216.

[0248] The substrate processing system 1200 includes a radio frequency (RF) power supply 1260. When plasma is used, the RF power supply 1260 supplies RF power to the showerhead 1216 during processing of the substrate 1224 and during cleaning of the station 1212 and with the pedestal 1214 grounded or floating. The RF power excites gases (e.g., process gases, vaporized precursors, cleaning gases) introduced into the station 1212 to generate plasma between the showerhead 1216 and the pedestal 1214. In some examples, the RF power supply 1260 can provide RF power to the pedestal 1214 instead of the showerhead 1216 to generate plasma with the showerhead 1216 grounded or floating.

[0249] The base 1218 of the pedestal 1214 includes a heater 1262 (e.g., the heater coil 440 described above). The heater 1262 heats the base 1218 of the pedestal 1214, which in turn heats the substrate 1224. The base 1218 of the pedestal 1214 includes a temperature sensor 1264 (e.g., a thermocouple connected to the conduit 484 as described above) to sense the temperature of the pedestal 1214.

[0250] The base 1226 of the showerhead 1216 may also include a heater (not shown) to heat the gas introduced into the station 1212. In addition, the base 1226 of the showerhead 1216 may also include a temperature sensor 1268 to sense the temperature of the showerhead 1216.

[0251] The substrate processing system 1200 includes another set of valves 1290 connected to the gas source 1254, an MFC and pressure controller shown collectively at 1292, and a heater 1294. Edge gas and sweep gas from the gas source 1254 are introduced into the pedestal 1214 via valves 1290 (e.g., via edge gas plenum 442, pocket edge gas plenum 466, and sweep gas plenum 450 in the pedestal 1214 as described above).

[0252] The first and second MFCs 1292 control the flow of edge gas via the edge gas plenum 442 and the pocket edge gas plenum 466, respectively. The pressure controller 1292 controls the pressure of the sweep gas supplied through the sweep gas plenum 450. In particular, the pressure controller 1292 is set to a pressure that is higher than the process pressure in the station 1212. This forces the sweep gas to flow radially outward from beneath the substrate 417 toward and into the chamber (i.e., the volume of the station 1212 surrounding the susceptor 1214). The flow of the sweep gas prevents diffusion of the front side reactant gases, prevents back side deposition reactions from occurring, and prevents corrosion of the top surface of the top plate 416.

[0253] Edge gas flows through edge gas plenum 442 and pocket edge gas plenum 466 around the edge of substrate 1224 to control processing (e.g., deposition, etching) at the edge (bevel) of substrate 1224, as described in detail above. Sweep gas flows through sweep gas plenum 450 below substrate 1224 to control backside deposition and diffusion of process gas below substrate 1224, as described in detail above. Heater 1294 heats edge gas supplied to pocket edge gas plenum 466, as described in detail above.

[0254] The vacuum pump 1272 is connected to the pedestal 1214 (e.g., to the conduit 476 described above) via another of the valves 1270. To clamp the substrate 1224, the vacuum pump 1272 creates a vacuum on the top surface of the pedestal 1214 by evacuating the gas in the station 1212 via the vacuum clamping plenum 472, as described in detail above.

[0255] The substrate processing system 1200 includes a controller 1280. The controller 1280 controls the valves 1256, 1290, and 1270; the MFCs 1258 and 1292 and the pressure controller 1292; the heater 1294 and the heaters in the pedestal 1214 and the showerhead 1216; the RF power supply 1260; and the vacuum pump 1272. The controller 1280 monitors the temperature of the pedestal 1214 and the showerhead 1216 using the temperature sensors 1264 and 1268 in the pedestal 1214 and the showerhead 1216. The controller 1280 controls the temperature of the pedestal 1214 and the showerhead 1216 by controlling the heaters in the pedestal 1214 and the showerhead 1216.

[0256] In addition, although not shown, the substrate processing system 1200 may further include a cooling system to supply coolant to cooling channels in the pedestal 1214 and the showerhead 1216. The controller 1280 controls the supply of coolant to the cooling channels in the pedestal 1214 and the showerhead 1216 to control the temperature of the pedestal 1214 and the showerhead 1216.

[0257] refer to Figure 1-26 Additional details regarding various features of the base are described and shown below with reference to Fig. 27 and 28 Give a description. Fig. 27 A top view of pocket 430 is shown. Fig.28 An enlarged view of the corner hole 462 is shown. In addition to the additional details described below, all other details of features identified by the same reference numerals are not described again for the sake of brevity. Unless otherwise specified, the following description applies to all bases described above.

[0258] exist Fig. 27 For example, the susceptor described in the embodiments of the present disclosure may have at least three pockets 430 defined along the periphery of the susceptor. An example of one pocket 430 is shown. Each pocket 430 includes a narrow portion 1300 and a wide portion 1302. The narrow portion 1300 is positioned radially inward relative to the wide portion 1302. The end of the narrow portion 1300 (i.e., the inner end portion 1301 of the pocket 430) may be the narrowest portion within the narrow portion 1300 of the pocket 430. In some embodiments, the inner end portion 1301 of the pocket 430 is positioned radially inward of the edge gas groove 420. The wide portion 1302 is positioned radially outward of the narrow portion 1300. The wide portion 1302 is located radially outward of the edge gas groove 420.

[0259] In reference Figure 4A-13 Some of the bases shown and described (but not in reference Figure 15-19 In the pedestal shown and described above, the edge gas groove 420 is located on the top surface of the pedestal, as shown in FIG. Figures 4A-6A As described above. Also as described above, the edge gas trench 420 is concentric with the base. The edge gas trench 420 intersects the narrow portion 1300 of each pocket 430. In some embodiments, at least 30 through holes 423 are located in the edge gas trench 420, and at least one through hole 423 is located in the narrow portion 1300 of each pocket 430. In one example, the edge gas trench 420 includes 96 through holes 423. In some examples, the edge gas trench 420 includes more than 60 through holes 423, more than 80 through holes 423, or more than 90 through holes 423.

[0260] In some examples, the through holes 423 can be distributed radially uniformly within the edge gas trench 420. In other examples, the distribution of the through holes 423 within the edge gas trench 420 can be uneven. For example, the through holes 423 in the first group can be closer to each other than the through holes 423 in the second group of through holes 423. The distance between the through holes 423 in the first group can be less than the distance between the through holes 423 in the second group. Therefore, the through holes 423 can be grouped into one or more clusters along the edge gas trench 420. As another example, some of the through holes 423 can be closer to the inner wall (i.e., ID) of the edge gas trench 420, while other through holes 423 can be closer to the outer wall (i.e., OD) of the edge gas trench 420.

[0261] Having multiple through holes 423 in the edge gas trench 420 can provide several advantages. For example, more through holes 423 can provide more uniform gas delivery at the edge of the substrate 417. In addition, more through holes 423 can reduce the gap points around the outer edge portion of the substrate 417. In addition, more through holes 423 can provide faster gas delivery to various radial points. For some applications, it is preferred that the number of through holes 423 is between 60 and 130, and in some cases, between 85 and 110. Too many through holes can lead to high manufacturing costs and it is difficult to keep the orifice arrangement consistent. In some cases, when too many through holes 423 are placed in the edge gas trench 420 (or too many through holes 423 are too close together), clogging can be a problem. Because the various different through holes of the base need to work together, the number of through holes 423 in the edge gas trench 420 is calculated and strategically positioned so that the above advantages can be achieved while reducing potential negative effects.

[0262] The outermost (also referred to as the first) circular clamping groove 424 is located radially inward of the edge gas groove 420 on the top surface of the base, as described above with reference to Figures 4A-6A As described above. Also as described above, the purge gas groove 422 is located radially inward of the edge gas groove 420 and between the edge gas groove 420 and the (first) circular clamping groove 424 on the top surface of the pedestal. In some embodiments, approximately 25-50 through holes 446 are located in the purge gas groove 422. In some embodiments, approximately 30-40 through holes 446 are located in the purge gas groove 422. In some embodiments, 35-37 through holes 446 are located in the purge gas groove 422. Some of the trade-offs discussed above with reference to the edge gas groove 420 also apply to the through holes 446. Enough through holes 446 need to be placed to achieve optimal / uniform purge effects beneath the substrate 417.

[0263] exist Fig.28 in Figure 4A-16In the illustrated base, at least one corner hole 462 is located within the narrow portion 1300 of each pocket 430. In some examples, not all pockets 430 have a corner hole 462 (e.g., 1 of 3 pockets 430 has a corner hole 462, or 2 of 3 pockets 430 have a corner hole 462). In these examples, other pockets 430 may not have an aperture around the same area or may have a non-beveled hole. The narrow portion 1300 is laterally narrowed along a plane parallel to the x-axis, as shown. Fig. 27 As shown. Fig.28 , the height of the narrow portion 1300 along the z-axis is seen. At least one corner hole 462 is connected to a gas delivery conduit 463. In some embodiments, the corner hole 462 is located on the side wall 1304 of the narrow portion 1300 of each bag 430 closest to the center of the base.

[0264] In particular, the corner holes 462 are located on the radially inner sidewall 1304 of the narrow portion 1300 of each pocket 430, wherein the sidewall 1304 is perpendicular to the bottom surface 1306 of each pocket 430. The corner holes 462 are located above at least 25% of the height h1 of the sidewall 1304 of the narrow portion 1300 of each pocket 430 that is closest to the center of the base. The height h2 at which the corner holes 462 are located on the sidewall 1304 is measured from the bottom surface 1306 of each pocket 430. In some examples, the corner holes 462 are located above at least 50-75% of the height h1 of the sidewall 1304 of the narrow portion 1300 of each pocket 430. In some embodiments, the corner holes 462 of one pocket may be at a different height (h2) than the height (h2) of the corner holes 462 at the next pocket 430. The advantages of placing the corner holes 462 at a selected height on the sidewall 1304 are described below.

[0265] The gas delivery conduit 463 has a central axis 1310 that is not perpendicular to the sidewall 1304 of the narrow portion 1300 of each pocket 430. Perpendicular means forming an angle of 90 degrees with a given line, plane, or surface. Instead, the central axis 1310 of the gas delivery conduit 463 forms an acute angle 1312 with the sidewall 1304 of the narrow portion 1300 of each pocket 430. In some examples, the angle 1312 is between 20 and 80 degrees. In other examples, the angle 1312 is between 30 and 70 degrees, or between 40 and 60 degrees, or between 45 and 56 degrees. In some embodiments, the gas delivery conduit 463 at one pocket 430 forms an acute angle with the sidewall 1304 that is different from the acute angle formed in another pocket 430. In other words, the gas delivery conduits 463 at different pockets 430 can be formed at different reference angles.

[0266] The height and angle at which the corner holes 462 open on the sidewall 1304 can determine the direction, trajectory, and distribution of the gas flowing out of the corner holes 462 into the pocket 430. For example, without gas flow from the corner holes 462 into the pocket 430, the pocket area would typically cause a cold spot on the portion of the substrate 417 located above the pocket area. The gas supplied through the corner holes 462 located at the selected height and angle on the sidewall 1304 can reduce or eliminate the cold spot and improve process uniformity on the substrate 417 at the location of the substrate 417 located above the pocket area. The angle is selected so that the gas flowing out of the corner holes 462 effectively sweeps the finger area of ​​the pocket 430 and also flows to the substrate 417, thereby improving uniformity. The height and angle are also selected so that some amount of material is present above the corner holes 462 (between the top of the corner holes 462 and the top surface of the base) to achieve structural integrity.

[0267] In addition, the gas supplied via the corner holes 462 located at a selected height and angle on the side wall 1304 can be heated, as described above with reference to Fig.26 As described, the temperature of the substrate 417 in the area directly above the pocket 430 is locally increased, which improves temperature non-uniformity and reduces cold spots on the substrate 417 in the area directly above the pocket 430. In some embodiments, the angle of the corner hole 462 is set between 45 and 56 degrees for each pocket to achieve the desired uniformity.

[0268] The purge gas channel 422 also includes Figures 4A-6A As also described above, the purge gas groove 422 and the first clamping groove 424 include radially inner rounded corner portions 434-1, 434-2 (see FIG. 1 ) opposite the radially inner end (i.e., the narrow portion 1300) of the corresponding pocket portion 430. Fig. 6A display and description).

[0269] In addition, as mentioned above Figures 4A-6A As described, the base also includes a plurality of clamping grooves 424 located radially inward of the first clamping groove 424. The plurality of clamping grooves 424 include a plurality of radial clamping grooves and one or more concentric clamping grooves (for example, see Fig. 6A ). At least one of the plurality of radial clamping grooves intersects the one or more concentric clamping grooves and the first clamping groove. Fig. 6A and 11A ) includes a plurality of through holes 490 arranged in a circular arrangement. Fig. 6A and 11A -11C shows and describes the clamping groove 424 and the through hole 490 in more detail.

[0270] As reference Fig. 6Aand 11A -11C, the plurality of radial clamping grooves 424 near the central portion 419 of the base includes one or more through holes 490 along each of the plurality of radial clamping grooves 424. In some embodiments, the diameter of one or more through holes 490 occupies between 65-100% of the width of the corresponding radial clamping groove 424. In some examples, the diameter of one or more through holes 490 occupies between 75-95% of the width of the corresponding radial clamping groove 424. In some examples, the diameter of all through holes 490 is about (in this example + / - 5%) 0.045 inches to 0.050 inches. In some examples, the diameter of all through holes 490 is about 0.60 inches to 0.65 inches. In some examples, the diameter of one group of through holes 490 is about 0.45 inches to 0.50 inches, while the diameter of another group of through holes 490 is about 0.60 inches to 0.65 inches. The different diameters of the through holes 490 result in different clamping forces. The number of through holes 490 also results in different clamping forces. Therefore, the number and diameter of through holes 490 can be optimized to provide a uniform clamping force to clamp the substrate 417. In embodiments with more than one through hole 490 in a radial clamping groove, one through hole 490 can be larger or smaller (in terms of size in terms of diameter) than the next through hole 490. In other words, the through holes 490 used for clamping need not have the same size along the radial clamping groove. In some embodiments, the through holes 490 in the same radial clamping groove have the same diameter.

[0271] In addition, if Fig.11A As shown, the central portion 419 of the top surface of the base includes a plurality of intersection points where the plurality of radial clamping grooves 424 intersect. In some examples, the central portion 419 of the top surface of the base includes two intersection points 471, 473 where five of the plurality of radial clamping grooves 424 intersect.

[0272] In some embodiments, the angles between adjacent ones of the plurality of radial clamping grooves 424 branched from one of the plurality of intersections 471 are non-uniform (i.e., not all 72 degrees apart). In the plurality of radial clamping grooves 424 branched from one of the plurality of intersections 471, the first groove is ninety degrees away from the second groove adjacent to the first groove in the clockwise direction, and sixty degrees away from the third groove in the counterclockwise direction. In addition, in the plurality of radial clamping grooves 424 branched from one of the plurality of intersections 471, the first groove is ninety degrees away from the second groove adjacent to the first groove in the clockwise direction, and ninety degrees away from the third groove in the counterclockwise direction. In addition, in the plurality of radial clamping grooves 424 branched from one of the plurality of intersections 471, at least two adjacent grooves are spaced less than 90 degrees from each other, and at least two adjacent grooves are spaced 90 degrees from each other. The unique geometric patterns disclosed herein facilitate clamping uniformity so that the substrate 417 is properly clamped on the desired area of ​​the pedestal with the least number of through holes 490. It is not ideal if one area under the substrate 417 has much greater clamping force than another area.

[0273] At least one through hole 490 is located in each of the plurality of radial clamping grooves 424 that branch from one of the plurality of intersection points 471. In some examples, when two through holes 490 are located in each of the plurality of radial clamping grooves 424 that branch from one of the plurality of intersection points 471, a first group of through holes 490 are located in each of the plurality of radial clamping grooves 424 in a first circle of a first radius, and a second group of through holes 490 are located in each of the plurality of radial clamping grooves 424 in a second circle of a second radius, wherein the second radius is greater than the first radius. In some examples, the first radius is 25-75% of the second radius. Instead of placing the plurality of clamping through holes 490 near and below the periphery of the substrate, the configuration of the clamping through holes 490 allows the clamping force source to be placed in the center, which reduces the space required below the base for the passage conduit 476. Although the distance to the periphery of the substrate is farther, the through holes 490 and the clamping grooves 424 are configured to allow uniform clamping force from the central area of ​​the base.

[0274] As referenced above Figure 4A As described, at least one of the three pockets 430 is defined in an ear portion of the base, wherein the ear portion includes a slot 1002 defined on an outer surface of the ear portion, and wherein the slot 1002 is completely defined as described above with reference to Fig. 20A and 20B In some examples, the base also includes a plurality of ceramic springs 502 disposed on the top surface of the base, as described above with reference to Fig.14A Shown and described.

[0275] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because other modifications will become apparent upon studying the drawings, description and appended claims.

[0276] It should be understood that, without changing the principles of the present disclosure, one or more steps in the method can be performed in different orders (or simultaneously). In addition, although each example is described above as having certain features, any one or more of those features described relative to any example of the present disclosure can be implemented in the features of any other example and / or combined with the features of any other example, even if the combination is not clearly described. In other words, the examples described are not mutually exclusive, and the permutation of one or more examples each other remains within the scope of the present disclosure.

[0277] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0278] In some implementations, the controller is part of a system, which can be part of the examples above. Such a system can include a semiconductor processing device that includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronics for controlling their operation before, during, and after processing of semiconductor wafers or substrates.

[0279] The electronic device may be referred to as a "controller" which may control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller may be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer into and out of tools and other transfer tools and / or load locks connected or docked with a particular system.

[0280] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software).

[0281] Program instructions may be instructions sent to a controller in the form of various individual settings (or program files) that define operating parameters for performing a particular process on or for a semiconductor wafer or system. In some examples, the operating parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0282] In some implementations, the controller can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud" or all or part of a wafer fab host system that can allow remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance criteria for multiple manufacturing operations, change parameters of a current process, set processing steps to follow a current process, or start a new process.

[0283] In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control.

[0284] Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0285] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0286] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A substrate support, comprising: at least three pockets defined along a perimeter of the substrate support, each pocket comprising a narrow portion and a wide portion radially outward of the narrow portion; an edge gas trench on a top surface of the substrate support, the edge gas trench being concentric with the substrate support, the edge gas trench intersecting the narrow portion of each pocket, wherein there are at least thirty through holes in the edge gas trench and at least one through hole in the narrow portion of each pocket; and A first clamping groove is positioned radially inward of the edge gas groove on the top surface of the substrate support.

2. The substrate support according to claim 1, further comprising: at least one corner hole located within the narrow portion of at least one of the at least three pockets, wherein the at least one corner hole is connected to a gas delivery conduit; and A sweep gas channel is positioned on the top surface of the substrate support between the edge gas channel and the first clamping channel.

3. The substrate support of claim 2, wherein the edge gas channel, the sweep gas channel, and the first clamping channel are concentric.

4. The substrate support according to claim 2, wherein: For the at least one of the at least three pockets, the corner hole is located at a radially inner sidewall of the narrow portion of the corresponding pocket, the radially inner sidewall of the narrow portion being the pocket surface closest to the center of the substrate support. 5 . The substrate support of claim 4 , wherein the radially inner sidewall is perpendicular to a bottom surface of the respective pocket.

6. The substrate support of claim 4, wherein the corner aperture is located above at least 25% of the height of the radially inner sidewall of the narrow portion of the respective pocket, wherein the height is measured from a bottom surface of the respective pocket.

7. The substrate support of claim 6, wherein the corner hole is located above at least 50%-75% of the height of the radially inner sidewall of the narrow portion of the pocket.

8. The substrate support of claim 4, wherein the gas delivery conduit has a central axis that is non-perpendicular to the radially inner sidewall of the narrow portion of the corresponding pocket.

9. The substrate support of claim 8, wherein a central axis of the gas delivery conduit forms an acute angle with the radially inner sidewall of the narrow portion of the pocket.

10. The substrate support of claim 9, wherein the acute angle is between 20 degrees and 80 degrees. The substrate support of claim 9 , wherein the acute angle is between 30 degrees and 70 degrees.

12. The substrate support of claim 9, wherein the acute angle is between 40 degrees and 60 degrees.

13. The substrate support of claim 2, wherein the sweep gas channel comprises one or more through holes.

14. The substrate support of claim 2, wherein the purge gas groove and the first clamping groove include inner rounded corner portions radially aligned with inner ends of the respective pockets.

15. The substrate support according to claim 2 further comprises a plurality of clamping grooves located radially inward of the first clamping groove, the plurality of clamping grooves comprising a plurality of radial clamping grooves and one or more concentric clamping grooves, wherein at least one of the plurality of radial clamping grooves intersects with at least one concentric clamping groove and the first clamping groove.

16. The substrate support of claim 15, wherein the plurality of radial clamping grooves proximate a central portion of the substrate support comprises a plurality of through holes disposed in a circular array.

17. The substrate support of claim 15, wherein the plurality of radial clamping grooves proximate a central portion of the substrate support comprises one or more through holes along each of the plurality of radial clamping grooves.

18. The substrate support of claim 17, wherein a diameter of the one or more through holes comprises between 55%-90% of a width of the corresponding radial clamping groove.

19. The substrate support of claim 2, wherein at least one of the three pockets is defined in an ear of the substrate support, wherein the ear of the substrate support includes a slot defined on an outer surface of the ear, the slot being completely defined within a single plate.

20. The substrate support of claim 2, further comprising a plurality of ceramic springs disposed on the top surface of the substrate support.

21. The substrate support according to claim 1 further comprises a plurality of clamping grooves located radially inward of the first clamping groove, the plurality of clamping grooves comprising a plurality of radial clamping grooves and one or more concentric clamping grooves, wherein at least one of the plurality of radial clamping grooves intersects with the one or more concentric clamping grooves and the first clamping groove.

22. The substrate support of claim 21, wherein the plurality of radial clamping grooves proximate a central portion of the substrate support comprises a plurality of through holes arranged in a circular array.

23. The substrate support of claim 21, wherein the plurality of radial clamping grooves proximate a central portion of the substrate support comprises one or more through holes along each of the plurality of radial clamping grooves.

24. The substrate support of claim 23, wherein a diameter of the one or more through holes comprises between 55% and 90% of a width of the corresponding radial clamping groove.

25. A substrate support according to claim 1, wherein at least one of the three pockets is defined in an ear of the substrate support, wherein the ear of the substrate support includes a slot defined on an outer surface of the ear, the slot being completely defined within a single plate.

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