A detection method, device, equipment and storage medium based on wafer detection system

Abstract

The present invention discloses a detection method, device, equipment and storage medium based on a wafer detection system. The wafer detection system includes: a laser light source, a wafer motion module and a position detection module; the laser light source is used to emit a detection laser; the wafer motion module is used to reflect the detection laser to generate a reflected laser; the position detection module is used to receive the reflected laser; the detection method includes: obtaining a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module; obtaining the moving distance of the reflected laser on the position detection module when the wafer motion module moves; calculating the motion state parameters of the wafer motion module based on the first angle, the second angle and the moving distance; the motion state parameters include the tilt angle and the amplitude. By adopting the above technical solution, the motion state parameters of the wafer motion module can be simply and efficiently calculated so that the staff can calibrate the wafer motion module, thereby improving the wafer detection accuracy.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor detection technology, and in particular to a detection method, device, equipment and storage medium based on a wafer detection system. Background Art

[0002] During semiconductor inspection, the relative distances between the wafer surface, the position detection module, and the signal collection module must remain constant while the wafer or detection module moves. While the detection and signal collection modules are fixed, there is relative motion between the wafer and the two modules. The wafer is placed on a motion platform to form a wafer motion module. The motion platform moves the wafer inspection section into the detection range through horizontal and rotational motion.

[0003] During this process, the moving platform is poorly level or vibrates, resulting in deviations in the motion state parameters of the wafer on the moving platform, affecting the detection accuracy of the wafer; currently, there is a lack of effective measures to detect the motion state parameters of the wafer. Summary of the Invention

[0004] The present invention provides a detection method, device, equipment and storage medium based on a wafer detection system, which simply and efficiently calculates the motion state parameters of the wafer so that staff can calibrate the wafer motion module, thereby improving the wafer detection accuracy.

[0005] According to one aspect of the present invention, a detection method based on a wafer detection system is provided, wherein the wafer detection system includes: a laser light source, a wafer motion module, and a position detection module;

[0006] The laser light source is used to emit a detection laser; the wafer motion module is used to reflect the detection laser to generate a reflected laser; the position detection module is used to receive the reflected laser;

[0007] The detection method comprises:

[0008] Acquire a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module;

[0009] Acquiring a moving distance of the reflected laser on the position detection module when the wafer motion module moves;

[0010] The motion state parameters of the wafer motion module are calculated according to the first angle, the second angle, and the moving distance; the motion state parameters include a tilt angle and an amplitude.

[0011] Optionally, obtaining a moving distance of the reflected laser on the position detection module when the wafer motion module moves includes:

[0012] Acquire a first distance set of the reflected laser light moving on the position detection module when the wafer motion module moves horizontally multiple times at preset intervals; wherein the horizontal movement includes the wafer motion module moving closer to or away from the position detection module; and the first distance set includes a plurality of first distance element values;

[0013] Calculating the motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance includes:

[0014] The tilt angle of the wafer motion module is calculated according to the first angle, the second angle, and the first distance set.

[0015] Optionally, calculating the tilt angle of the wafer motion module according to the first angle, the second angle, and the first distance set includes:

[0016] Determine a first height difference set based on the first angle, the second angle, and the first distance set; the first height difference set includes a plurality of first height difference element values, and the first height difference element values correspond to the first distance element values; the first height difference element value refers to the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state;

[0017] Acquire a horizontal motion distance set; the horizontal motion distance set includes a plurality of horizontal motion distance element values; the horizontal motion distance element value refers to a first distance difference between an intersection position between the wafer motion module and a preset plane and an incident position of the detection laser on the wafer motion module in a second direction in any motion state; the second direction intersects the first direction;

[0018] The tilt angle is determined according to the first height difference set and the horizontal movement distance set.

[0019] Optionally, obtaining a horizontal movement distance set includes:

[0020] Determine a second distance difference in the second direction between an incident position of the detection laser in a current state of the wafer motion module and an incident position in an initial state;

[0021] determining a horizontal motion distance element value according to the second distance difference and the preset interval;

[0022] A set of multiple horizontal movement distance element values determined by the wafer movement module performing multiple horizontal movements at preset intervals is used as the horizontal movement distance set.

[0023] Optionally, determining the tilt angle according to the first height difference set and the horizontal movement distance set includes:

[0024] Determine a tilt angle set according to the first height difference set and the horizontal movement distance set; the tilt angle set includes a plurality of tilt angle element values, and the tilt angle element values correspond to the first height difference element values and the horizontal movement distance element values;

[0025] The tilt angle is determined according to an average value of a plurality of tilt angle element values.

[0026] Optionally, obtaining a moving distance of the reflected laser on the position detection module when the wafer motion module moves includes:

[0027] Acquire a second distance traveled by the reflected laser on the position detection module during the rotation of the wafer motion module;

[0028] Calculating the motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance includes:

[0029] The amplitude of the wafer motion module is calculated according to the first angle, the second angle, and the second distance.

[0030] Optionally, calculating the motion state parameter of the wafer motion module according to the first angle, the second angle, and the moving distance includes:

[0031] Calculate the motion state parameters of the wafer motion module according to the following height difference formula;

[0032]

[0033] Among them, h represents the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state, D represents the moving distance of the reflected laser on the position detection module, θ1 represents the first angle, and θ2 represents the second angle.

[0034] According to another aspect of the present invention, there is provided a detection device based on a wafer detection system, wherein the wafer detection system comprises: a laser light source, a wafer motion module, and a position detection module;

[0035] The laser light source is used to emit a detection laser; the wafer motion module is used to reflect the detection laser to generate a reflected laser; the position detection module is used to receive the reflected laser;

[0036] The detection device comprises:

[0037] An angle acquisition module, used to acquire a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module;

[0038] A moving distance acquisition module, used for acquiring the moving distance of the reflected laser on the position detection module when the wafer motion module moves;

[0039] A calculation module is used to calculate the motion state parameters of the wafer motion module according to the first angle, the second angle and the moving distance; the motion state parameters include a tilt angle and an amplitude.

[0040] According to another aspect of the present invention, a detection device is provided, comprising:

[0041] at least one processor; and

[0042] a memory communicatively connected to the at least one processor; wherein,

[0043] The memory stores a computer program that can be executed by the at least one processor. The computer program is executed by the at least one processor so that the at least one processor can perform the detection method described in any embodiment of the present invention.

[0044] According to another aspect of the present invention, a computer-readable storage medium is provided, wherein the computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the detection method according to any embodiment of the present invention when executed.

[0045] In an embodiment of the present invention, a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module are first obtained. The distance the reflected laser moves on the position detection module during wafer motion is further obtained. Finally, the motion state parameters of the wafer motion module are calculated based on the first angle, the second angle, and the movement distance. The above technical solution can simply and efficiently calculate the motion state parameters of the wafer motion module, allowing staff to calibrate the wafer motion module and thereby improve wafer detection accuracy.

[0046] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0048] Figure 1 is a structural diagram of a first wafer inspection system provided according to an embodiment of the present invention;

[0049] Figure 2 is a flow chart of a first detection method based on a wafer detection system provided according to an embodiment of the present invention;

[0050] Figure 3 1 is a schematic diagram of a propagation path of a detection laser light path provided according to an embodiment of the present invention;

[0051] Figure 4 is a flow chart of a second detection method based on a wafer detection system provided according to an embodiment of the present invention;

[0052] Figure 5 This is a schematic diagram of a wafer motion module state change according to an embodiment of the present invention;

[0053] Figure 6 is a flow chart of a third detection method based on a wafer detection system provided according to an embodiment of the present invention;

[0054] Figure 7 is a flow chart of a fourth detection method based on a wafer detection system provided according to an embodiment of the present invention;

[0055] Figure 8 2 is a schematic diagram of a second wafer motion module state change according to an embodiment of the present invention;

[0056] Figure 9 is a structural diagram of a second wafer inspection system provided according to an embodiment of the present invention;

[0057] Figure 10 2 is a schematic structural diagram of a wafer motion module provided according to an embodiment of the present invention;

[0058] Figure 11 1 is a schematic structural diagram of a detection device based on a wafer detection system provided according to an embodiment of the present invention;

[0059] Figure 12 It is a structural schematic diagram of a detection device provided according to an embodiment of the present invention. DETAILED DESCRIPTION

[0060] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0061] It should be noted that the terms "first," "second," and the like in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or precedence. It should be understood that the numbers used in this manner are interchangeable where appropriate so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, any variations of the terms "including" and "having" are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to these processes, methods, products, or apparatus.

[0062] Figure 1 is a structural diagram of a first wafer inspection system provided according to an embodiment of the present invention. Figure 2 This is a flow chart of a first detection method based on a wafer detection system provided according to an embodiment of the present invention; this embodiment is applicable to detecting the motion state parameters of a wafer, and the method can be performed by a wafer detection device, which can be implemented in the form of hardware and / or software. The wafer detection system includes: a laser light source (not shown in the figure), a wafer motion module 1, and a position detection module 2; the laser light source is used to emit a detection laser 3; the wafer motion module 1 is used to reflect the detection laser 3 to generate a reflected laser 4; the position detection module 2 is used to receive the reflected laser 4;

[0063] like Figure 2 As shown, the above structure detection method includes:

[0064] S110 , obtaining a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module.

[0065] Specifically, such as Figure 1 As shown, the first angle θ1 may be the angle between the detection laser 3 and the wafer motion module 1 , and the second angle may be the angle between the reflected laser 4 after shaping and the position detection module 2 .

[0066] S120 , obtaining a moving distance of the reflected laser on the position detection module when the wafer motion module moves.

[0067] Specifically, such as Figure 1 As shown in the figure, in case 1, if the wafer motion module 1 is tilted, the incident position of the detection laser 3 on the wafer motion module 1 will change when the wafer motion module 1 is moving horizontally. Furthermore, the reflected laser 4 incident on the position detection module 2 will also move in the position detection module 2 following the change in the incident position.

[0068] In the second case, if the wafer motion module 1 vibrates during rotation, the wafer motion module 1 will move in the vertical direction. At this time, the incident position of the detection laser 3 on the wafer motion module 1 will also change. Furthermore, the reflected laser 4 incident on the position detection module 2 will also move in the position detection module 2 following the change of the incident position.

[0069] S130 , calculating motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance.

[0070] The motion state parameters include tilt angle and amplitude.

[0071] Specifically, the tilt angle refers to the angle between the surface of the wafer 12 and the horizontal plane when the wafer motion module 1 is poorly level. The amplitude refers to the vertical amplitude of the wafer motion module 1 when the wafer motion module 1 rotates.

[0072] Figure 3 is a schematic diagram of a propagation path of a detection laser light path provided according to an embodiment of the present invention. Optionally, the motion state parameters of the wafer motion module are calculated based on the first angle, the second angle, and the moving distance, including:

[0073] Calculate the motion state parameters of the wafer motion module according to the following height difference formula;

[0074]

[0075] Among them, h represents the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state, D represents the moving distance of the reflected laser on the position detection module, θ1 represents the first angle, and θ2 represents the second angle.

[0076] For example, Figure 3 As shown, h represents the height difference in the first direction Y between the incident position a of the detection laser 3 in the current state of the wafer motion module 1 and the incident position b in the initial state, D represents the moving distance of the reflected laser 4 on the position detection module 2, θ1 represents the first angle, and θ2 represents the second angle.

[0077] In an embodiment of the present invention, a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module are first obtained. The distance the reflected laser moves on the position detection module during wafer motion is further obtained. Finally, the motion state parameters of the wafer motion module are calculated based on the first angle, the second angle, and the movement distance. The above technical solution can simply and efficiently calculate the motion state parameters of the wafer motion module, allowing staff to calibrate the wafer motion module and thereby improve wafer detection accuracy.

[0078] Figure 4 is a flow chart of a second detection method based on a wafer detection system provided according to an embodiment of the present invention. Figure 5 FIG1 is a schematic diagram of a wafer motion module state change according to an embodiment of the present invention. The embodiment of the present invention describes the detection of a wafer tilt angle.

[0079] S210 , obtaining a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module.

[0080] S220 , obtaining a first set of distances that the reflected laser moves on the position detection module when the wafer motion module moves horizontally multiple times at preset intervals.

[0081] Specific, combined Figure 4 and Figure 5 , horizontal movement includes the wafer motion module 1 moving closer to or away from the position detection module 2, and the first distance set includes multiple first distance element values. The preset interval refers to the distance that the wafer motion module 1 moves horizontally each time, and the distance can be 10mm. For example, if there is an inclination angle α between the wafer motion module 1 and the horizontal plane, the wafer motion module 1 is horizontally moved once from the initial state m at a preset interval to the current state n. When the wafer motion module 1 is in the initial state m, the incident position of the detection laser 3 on the wafer motion module 1 is point a. At this time, point a can be the center position of the wafer motion module 1. In the current state n, the incident position of the detection laser 3 on the wafer motion module 1 is point b. At this time, the first distance moved by the reflected laser 4 on the position detection module 2 is D1. The wafer motion module 1 is horizontally moved twice from the initial state m at a preset interval to the current state n. At this time, the first distance moved by the reflected laser 4 on the position detection module 2 is D2, and so on. The first distance element values can be D1, D2, D3... The first distance set is represented by {(D1), (D2), (D3) ...}.

[0082] S230 , calculating a tilt angle of the wafer motion module according to the first angle, the second angle, and the first distance set.

[0083] In an embodiment of the present invention, a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module are first obtained, and then a first distance set of the reflected laser moving on the position detection module when the wafer motion module moves horizontally multiple times at preset intervals is obtained. Finally, the inclination angle of the wafer motion module is calculated based on the first angle, the second angle and the first distance set. The above technical solution can simply and efficiently calculate the inclination angle of the wafer motion module, so that the staff can calibrate the wafer motion module, thereby improving the wafer detection accuracy.

[0084] Figure 6 This is a flow chart of a third detection method based on a wafer detection system according to an embodiment of the present invention. The embodiment of the present invention further explains how to calculate the tilt angle of the wafer motion module based on the first angle, the second angle and the first distance set. Figure 6 As shown, the detection method includes the following steps:

[0085] S310 , obtaining a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module.

[0086] S320, obtaining a first set of distances that the reflected laser moves on the position detection module when the wafer motion module moves horizontally multiple times at preset intervals.

[0087] S330: Determine a first height difference set according to the first angle, the second angle, and the first distance set.

[0088] Specifically, such as Figure 5 As shown, the first height difference set includes multiple first height difference element values, and the first height difference element value corresponds to the first distance element value. The first height difference element value refers to the height difference in the first direction Y between the incident position a of the detection laser 3 in the current state of the wafer motion module 1 and the incident position b in the initial state. It should be noted that n represents the current state of the wafer motion module 1, and m represents the initial state of the wafer motion module 1. The first angle θ1, the second angle θ2 and the element values D1, D2, D3... in the first distance set {(D1), (D2), (D3), ...} are substituted into the height difference formula respectively. Exemplarily, when the first distance is D1, the first angle θ1, the second angle θ2 and D1 are substituted into the height difference formula to calculate the first height difference h1. When the first distance is D2, the first angle θ1, the second angle θ2 and D2 are substituted into formula 1 to calculate the second height difference h2... {(h1), (h2), (h3), ...} represents a first height difference set.

[0089] S340: Acquire a horizontal movement distance set.

[0090] Specifically, such as Figure 5As shown, the horizontal movement distance set includes multiple horizontal movement distance element values; the horizontal movement distance element value refers to the intersection position between the wafer movement module 1 and the preset plane t in any movement state, and the first distance difference of the incident position of the detection laser 3 on the wafer movement module 1 in the second direction X; the second direction X intersects with the first direction Y.

[0091] For example, when the wafer motion module moves from the initial state m to the current state n, the horizontal motion distance element value can be the intersection position c between the wafer motion module 1 and the preset plane t in the current state n, and the first distance difference in the second direction X between the incident position b of the detection laser 3 on the wafer motion module 1.

[0092] The following describes how to obtain a horizontal movement distance set. Obtaining the horizontal movement distance set includes determining a second distance difference in a second direction between the incident position of the probe laser on the wafer motion module in the current state and the incident position in the initial state; determining a horizontal movement distance element value based on the second distance difference and a preset interval; and using a set of multiple horizontal movement distance element values determined by multiple horizontal movements of the wafer motion module at preset intervals as the horizontal movement distance set.

[0093] Specifically, the second distance difference may be calculated according to a second distance difference calculation formula, which is:

[0094]

[0095] Wherein, s1 represents the second distance difference, which represents the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state, and θ1 represents the first angle.

[0096] For example, Figure 5 As shown, the height difference in the first direction Y between the incident position b of the detection laser 3 in the current state n and the incident position a in the initial state m and the first angle θ1 of the detection laser 3 are substituted into the second distance difference calculation formula to calculate the second distance difference s1.

[0097] When the wafer motion module 1 moves once from the initial state m to the current state n at a preset interval, the second distance difference is recorded as s11. When the wafer motion module 1 moves twice from the initial state m to the current state n at a preset interval, the second distance difference is recorded as s12.

[0098] Let the movement distance of the wafer motion module 1 be S2. The preset interval may be 10 mm. When the wafer motion module 1 moves horizontally once from the initial state m to the current state n, the movement distance s21 of the wafer motion module 1 is 10 mm. If the wafer motion module 1 moves horizontally twice from the initial state m to the current state n, the movement distance s22 of the wafer motion module 1 is 20 mm.

[0099] The horizontal movement distance element value x is the sum of the second distance difference s1 and the movement distance s2 of the wafer movement module 1. That is, the multiple horizontal movement distance element values determined by the wafer movement module 1 at multiple horizontal movements at preset intervals are x1=s11+s21, x2=s12+s22,..., which are taken as the horizontal movement distance set {(x1), (x2), (x3),...}.

[0100] S350: Determine a tilt angle according to the first height difference set and the horizontal movement distance set.

[0101] The following further describes how to determine the tilt angle. Determining the tilt angle according to the first height difference set and the horizontal movement distance set includes:

[0102] A tilt angle set is determined based on a first height difference set and a horizontal movement distance set; the tilt angle set includes multiple tilt angle element values, and the tilt angle element values correspond to the first height difference element values and the horizontal movement distance element values; and the tilt angle is determined based on an average value of the multiple tilt angle element values.

[0103] Specifically, such as Figure 5 As shown, when the wafer motion module 1 moves horizontally once from the initial state m to the current state n at a preset interval, the first distance element value is D1, the first height difference element value is h1, and the horizontal motion distance element value is x1; when the wafer motion module 1 moves horizontally twice from the initial state m to the current state n at a preset interval, the first distance element value is D2, the first height difference element value is h2, and the horizontal motion distance element value is x2; when the wafer motion module 1 moves horizontally three times from the initial state m to the current state n at a preset interval, the first distance element value is D3, the first height difference element value is h3, and the horizontal motion distance element value is x3...

[0104] Substituting the first height difference element values in the first height difference set {(h1), (h2), (h3), ...} and the horizontal movement distance element values in the first distance set horizontal movement distance set {(x1), (x2), (x3), ...} into the linear relationship formula can determine the tilt angle set.

[0105] The linear relationship is:

[0106] h=tan(α)·x

[0107] Wherein, h represents the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state, x represents the horizontal motion distance element value, and α represents the tilt angle.

[0108] For example, if the first height difference element value is h1 and the horizontal movement distance element value is x1, the tilt angle element value is α1; if the first height difference element value is h2 and the horizontal movement distance element value is x2, the tilt angle element value is α2, etc. The tilt angle set is recorded as {(α1), (α2), (α3), ...}. The tilt angle is determined based on the average of the multiple tilt angle element values.

[0109] It is understandable that due to the interference of factors such as the resolution of the position detection module 2, the vibration of the wafer motion module 1 during the movement, and the warping of the wafer surface, the first height difference element value and the horizontal movement distance element value are not in an absolutely linear relationship. Therefore, it is necessary to perform multi-point testing and then calculate the average value to increase the accuracy of the tilt angle detection of the wafer motion module 1.

[0110] The embodiment of the present invention first obtains the first angle between the detection laser and the wafer motion module and the second angle between the reflected laser and the position detection module, and then obtains the first distance set of the reflected laser moving on the position detection module when the wafer motion module moves horizontally multiple times at preset intervals, and determines the first height difference set based on the first angle, the second angle and the first distance set, further obtains the horizontal movement distance set, and finally determines the tilt angle based on the first height difference set and the horizontal movement distance set, so as to simply and efficiently calculate the tilt angle of the wafer, so that the staff can calibrate the wafer motion module and further improve the wafer detection accuracy.

[0111] Figure 7 This is a flowchart of a fourth detection method based on a wafer detection system provided according to an embodiment of the present invention. Figure 8 1 is a schematic diagram of the state change of the second wafer motion module provided according to an embodiment of the present invention. This embodiment illustrates the calculation of the wafer vibration amplitude. Figure 7 As shown, the detection method includes:

[0112] S410 , obtaining a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module.

[0113] S420 , obtaining a second distance that the reflected laser moves on the position detection module during the rotation of the wafer motion module.

[0114] Specifically, such as Figure 8As shown, during the rotational movement of the wafer motion module 1, the wafer motion module 1 vibrates in the first direction Y, and the wafer motion module 1 rotates within one cycle, wherein one cycle can be 5-10 circles. The initial state can be the highest motion state o at the highest position to which the wafer motion module 1 moves within one rotation cycle, and the current state can be the lowest motion state p at the lowest position to which the wafer motion module 1 moves within one rotation cycle. Among them, the incident point a' of the detection laser 3 when the wafer motion module 1 is in the highest motion state o can be the center point of the wafer motion module 1. The second distance can be the moving distance of the reflected laser 4 on the position detection module 2 when the wafer motion module 1 moves from the highest motion state o to the lowest state p.

[0115] S430 , calculating the amplitude of the wafer motion module according to the first angle, the second angle, and the second distance.

[0116] Specifically, the amplitude h0 can be the height difference in the first direction Y between the incident position b' of the probe laser 3 in the current state of the wafer motion module 1 and the incident position a' in the initial state. The amplitude of the wafer motion module 1 can be calculated by substituting the first angle, the second angle, and the second distance into the height difference formula.

[0117] This embodiment of the present invention first obtains a first angle between the detection laser and the wafer motion module, and a second angle between the reflected laser and the position detection module. It then obtains a second distance that the reflected laser travels on the position detection module during the wafer motion module's rotation. The amplitude of the wafer motion module is then calculated based on the first angle, the second angle, and the second distance. This simple and efficient calculation of the wafer's amplitude facilitates calibration of the wafer motion module, further enhancing the strength of the detection signal during wafer inspection.

[0118] Figure 9 2 is a schematic structural diagram of a second wafer inspection system provided according to an embodiment of the present invention.

[0119] like Figure 9 As shown, the wafer inspection system further includes a shaping module 5 and an adjustment module 6; the shaping module 5 is disposed on the optical path between the wafer motion module 1 and the position detection module 2, and is used to receive the reflected laser light 4 generated by the wafer motion module 1, adjust the propagation direction of the reflected laser light 4, and transmit the reflected laser light 4 to the position detection module 2. The adjustment module 6 is disposed on the optical path between the laser light source 7 and the wafer motion module 1, and is used to receive the detection laser light 3, adjust the propagation path of the detection laser light 3, and transmit the detection laser light 3 to the wafer motion module 1.

[0120] Alternatively, as Figure 9As shown, the wafer inspection system also includes a pinhole diaphragm 8 and an attenuation unit 9. The pinhole diaphragm 8 is disposed in the optical path between the adjustment module 6 and the laser light source 7. The pinhole diaphragm 8 effectively limits the divergence angle of the detection laser 3, improving the collimation and directionality of the detection laser 3. Furthermore, the detection laser 3 emitted by the laser contains some unwanted stray light, and the pinhole diaphragm 8 can improve the purity and quality of the beam by blocking this stray light.

[0121] It is understandable that if Figure 9 As shown, high-power lasers have extremely high energy density. If this energy acts directly on the position detection module 2, it will cause irreversible damage to it. Therefore, an attenuation unit 9 is placed in the optical path between the shaping module 5 and the position detection module 2. The attenuation unit 9 can reduce the power of the reflected laser light 4 and thus protect the position detection module 2.

[0122] Figure 10 Schematic diagram of the structure of a wafer motion module provided according to an embodiment of the present invention. Figure 1 As shown, the wafer motion module 1 further includes a motion carrier 11 , which is used to drive the wafer 12 to perform horizontal and rotational motions.

[0123] Figure 11 FIG. 1 is a schematic structural diagram of a detection device based on a wafer detection system according to an embodiment of the present invention. Figure 1 As shown, the wafer detection system includes: a laser light source, a wafer motion module 1 and a position detection module 2;

[0124] The laser light source is used to emit a detection laser 3; the wafer motion module 1 is used to reflect the detection laser 3 to generate a reflected laser 4; the position detection module 2 is used to receive the reflected laser 4;

[0125] The detection device includes:

[0126] An angle acquisition module 510, used to acquire a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module;

[0127] The moving distance acquisition module 520 is used to acquire the moving distance of the reflected laser on the position detection module when the wafer motion module moves;

[0128] The calculation module 530 is used to calculate the motion state parameters of the wafer motion module according to the first angle, the second angle and the moving distance; the motion state parameters include the tilt angle and the amplitude.

[0129] The detection device based on the wafer detection system provided in the embodiment of the present invention can execute the detection method based on the wafer detection system provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0130] Figure 12 1 is a schematic diagram of the structure of a detection device provided according to an embodiment of the present invention. The detection device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The detection device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or required herein.

[0131] like Figure 12 As shown, the detection device 60 includes at least one processor 61 and a memory connected to the at least one processor 61, such as a read-only memory (ROM) 62, a random access memory (RAM) 63, etc., wherein the memory stores a computer program that can be executed by the at least one processor, and the processor 61 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 62 or the computer program loaded from the storage unit 68 into the random access memory (RAM) 63. Various programs and data required for the operation of the detection device 60 can also be stored in the RAM 63. The processor 61, ROM 62 and RAM 63 are connected to each other via a bus 64. An input / output (I / O) interface 65 is also connected to the bus 64.

[0132] Multiple components in the detection device 60 are connected to the I / O interface 65, including: an input unit 66, such as a keyboard, a mouse, etc.; an output unit 67, such as various types of displays, speakers, etc.; a storage unit 68, such as a magnetic disk, an optical disk, etc.; and a communication unit 69, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 69 allows the detection device 60 to exchange information / data with other devices via a computer network such as the Internet and / or various telecommunication networks.

[0133] The processor 61 can be a variety of general-purpose and / or specialized processing components with processing and computing capabilities. Some examples of the processor 61 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 61 performs the various methods and processes described above, such as the detection method.

[0134] In some embodiments, the detection method can be implemented as a computer program that is tangibly contained in a computer-readable storage medium, such as a storage unit 68. In some embodiments, part or all of the computer program can be loaded and / or installed on the detection device 60 via the ROM 62 and / or the communication unit 69. When the computer program is loaded into the RAM 63 and executed by the processor 61, one or more steps of the detection method described above can be performed. Alternatively, in other embodiments, the processor 61 can be configured to perform the detection method in any other suitable manner (e.g., by means of firmware).

[0135] Various embodiments of the systems and techniques described herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), system-on-chip systems (SOCs), programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments can include being implemented in one or more computer programs that are executable and / or interpreted on a programmable system that includes at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0136] Computer programs for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, such that when the computer program is executed by the processor, the functions / operations specified in the flowcharts and / or block diagrams are implemented. The computer program may be executed entirely on the machine, partially on the machine, as a stand-alone software package, partially on the machine and partially on a remote machine, or entirely on a remote machine or server.

[0137] In the context of the present invention, computer-readable storage media can be tangible media that can contain or store a computer program for use with an instruction execution system, device or equipment or used in combination with an instruction execution system, device or equipment. Computer-readable storage media can include but are not limited to electronic, magnetic, optical, electromagnetic, infrared or semiconductor systems, devices or equipment, or any suitable combination of the foregoing. Alternatively, computer-readable storage media can be machine-readable signal media. More specific examples of machine-readable storage media can include electrical connections based on one or more lines, portable computer disks, hard disks, random access memories (RAM), read-only memories (ROM), erasable programmable read-only memories (EPROM or flash memory), optical fibers, portable compact disk read-only memories (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0138] To provide interaction with a user, the systems and techniques described herein can be implemented on a detection device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user can provide input to the detection device. Other types of devices can also be used to provide interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, voice input, or tactile input).

[0139] The systems and techniques described herein can be implemented in a computing system that includes back-end components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes front-end components (e.g., a user computer with a graphical user interface or web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such back-end components, middleware components, or front-end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0140] A computing system may include clients and servers. The clients and servers are typically remote from each other and typically interact via a communication network. This client-server relationship arises through computer programs running on the respective computers, creating a client-server relationship. The server may be a cloud server, also known as a cloud computing server or cloud host. This server is a hosting product within the cloud computing service ecosystem that addresses the management difficulties and limited scalability of traditional physical hosting and VPS services.

[0141] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present invention can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved. This is not limited herein.

[0142] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A detection method based on a wafer detection system, characterized in that: The wafer detection system includes: a laser light source, a wafer motion module and a position detection module; The laser light source is used to emit a detection laser; the wafer motion module is used to reflect the detection laser to generate a reflected laser; the position detection module is used to receive the reflected laser; The detection method comprises: Obtaining a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module; Acquiring a moving distance of the reflected laser on the position detection module when the wafer motion module moves; Calculating motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance; the motion state parameters include a tilt angle; Acquiring a moving distance of the reflected laser on the position detection module when the wafer motion module moves, comprising: Acquire a first distance set of the reflected laser light moving on the position detection module when the wafer motion module moves horizontally multiple times at preset intervals; wherein the horizontal movement includes the wafer motion module moving closer to or away from the position detection module; and the first distance set includes a plurality of first distance element values; Calculating the motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance includes: Calculating the tilt angle of the wafer motion module according to the first angle, the second angle, and the first distance set; Calculating the tilt angle of the wafer motion module according to the first angle, the second angle, and the first distance set includes: Determine a first height difference set based on the first angle, the second angle, and the first distance set; the first height difference set includes a plurality of first height difference element values, and the first height difference element values correspond to the first distance element values; the first height difference element value refers to the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state; Acquire a horizontal motion distance set; the horizontal motion distance set includes a plurality of horizontal motion distance element values; the horizontal motion distance element value refers to a first distance difference between an intersection position between the wafer motion module and a preset plane and an incident position of the detection laser on the wafer motion module in a second direction in any motion state; the second direction intersects the first direction; The tilt angle is determined according to the first height difference set and the horizontal movement distance set.

2. The detection method according to claim 1, wherein Get the horizontal movement distance set including: Determine a second distance difference in the second direction between an incident position of the detection laser in a current state of the wafer motion module and an incident position in an initial state; determining a horizontal motion distance element value according to the second distance difference and the preset interval; A set of multiple horizontal movement distance element values determined by the wafer movement module performing multiple horizontal movements at preset intervals is used as the horizontal movement distance set.

3. The detection method according to claim 1, wherein Determining a tilt angle according to the first height difference set and the horizontal movement distance set includes: Determine a tilt angle set according to the first height difference set and the horizontal movement distance set; the tilt angle set includes a plurality of tilt angle element values, and the tilt angle element values correspond to the first height difference element values and the horizontal movement distance element values; The tilt angle is determined according to an average value of a plurality of tilt angle element values.

4. The detection method according to claim 1, wherein Calculating the motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance includes: Calculate the motion state parameters of the wafer motion module according to the following height difference formula; Wherein, h represents the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state, D represents the moving distance of the reflected laser on the position detection module, represents the first angle, represents the second angle.

5. A detection device based on a wafer detection system, characterized in that: Used to perform the detection method according to any one of claims 1 to 4, the wafer detection system comprises: a laser light source, a wafer motion module and a position detection module; The laser light source is used to emit a detection laser; the wafer motion module is used to reflect the detection laser to generate a reflected laser; the position detection module is used to receive the reflected laser; The detection device comprises: An angle acquisition module, used to acquire a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module; A moving distance acquisition module, used for acquiring the moving distance of the reflected laser on the position detection module when the wafer motion module moves; A calculation module is used to calculate the motion state parameters of the wafer motion module according to the first angle, the second angle and the moving distance; the motion state parameters include a tilt angle.

6. A detection device, characterized in that: The detection equipment includes: one or more processors; a storage device for storing one or more programs, When the one or more programs are executed by the one or more processors, the one or more processors implement the detection method according to any one of claims 1 to 4.

7. A storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the detection method according to any one of claims 1 to 4 is implemented.

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