NVIS In GREEN A display device and manufacturing method

Abstract

The invention discloses an NVIS In GREEN A display device and a manufacturing method, and belongs to the field of display device manufacturing, the display device is an LED light-emitting device and comprises a black patch type support, a chipset located on the black patch type support, a positive electrode bonding pad and a negative electrode bonding pad, the chipset comprises a cyan chip and an emerald chip, and the positive electrode bonding pad and the negative electrode bonding pad are arranged on the black patch type support. Performing circuit connection on the black patch type bracket and the chip set based on a bonding wire; the interior of the black patch type support and the area where the chip set is located are covered with a high-heat-resistance packaging silica gel layer, silicate fluorescent powder with the weight ratio of 0.5-2% is mixed in the high-heat-resistance packaging silica gel layer, after the silicate fluorescent powder is slightly excited by the cyan chip, green light emitted by the silicate fluorescent powder is compounded with a combination generated by the chip set, spectral components are further adjusted, and the spectral effect is improved. Therefore, the chromaticity coordinate of the LED device is ensured to accord with the NVIS green A standard. According to the invention, the definition of the display device is improved.

Description

Technical Field

[0001] The invention belongs to the field of display device manufacturing, and in particular relates to an NVIS In GREEN A display device and a manufacturing method thereof. Background Art

[0002] LED (light emitting diode), as the fourth generation of green lighting source, has been widely used in many fields such as lighting, display and signal indication due to its high energy efficiency, long life and environmental friendliness. In the military and civilian fields, the night vision imaging system (NVIS) is crucial for visual enhancement in low light or no light environment.

[0003] A similar prior art is a Chinese patent application with publication number CN102522291A, which discloses a plasma display screen and a manufacturing method thereof, wherein the plasma display screen comprises: a first substrate; a second substrate arranged opposite to the first substrate and sealed together; an addressing electrode arranged on a side of the second substrate facing the first substrate; a first dielectric insulating layer covering the addressing electrode; a bus electrode arranged on a side of the first dielectric insulating layer facing the first substrate; a second dielectric insulating layer covering the bus electrode; and a barrier rib arranged on a side of the second dielectric insulating layer facing the first substrate and covered by the first substrate.

[0004] The display devices in the above prior art consume high energy and may not be suitable for use in extreme temperature or vibration environments. Therefore, there is a need for an NVIS In GREEN A display device and a manufacturing method, which can provide natural light output during the day and be compatible with night vision systems at night to ensure clear visual effects in any environment. Summary of the invention

[0005] In order to solve the above problems, the present invention provides an NVIS In GREEN A display device and a manufacturing method to solve the problems in the prior art.

[0006] In order to achieve the above-mentioned purpose of the invention, the present invention proposes an NVIS In GREEN A display device and a manufacturing method thereof, wherein the display device is an LED light-emitting device, comprising:

[0007] A chipset, the chipset comprising a cyan chip and an emerald green chip;

[0008] A high heat-resistant encapsulation silica gel layer, wherein the high heat-resistant encapsulation silica gel layer is mixed with 0.5-2% by weight of silicate phosphor, and the high heat-resistant encapsulation silica gel layer is located in the area where the chip group is located.

[0009] The connection mode of the two chips in the chipset is series connection;

[0010] The size of the cyan chip is 12*13 mil, the power consumption is 15.5-16.9 mw, and the wavelength range is 495-500 nm. The size of the emerald green chip is 8*10 mil, the power consumption is 6-7 mw, and the wavelength range is 538-542 nm.

[0011] A method for manufacturing an NVIS In GREEN A display device, the manufacturing method comprising the following steps:

[0012] The black patch bracket is made of pure black PPA material. Based on the fact that the pure black PPA material absorbs all visible spectra, the cyan chip and the emerald green chip are mounted on the black patch bracket. The negative and positive electrodes of the chipset are circuit-connected to the positive and negative electrodes of the black patch bracket through the bonding wires, and the chipsets are connected to each other through bonding wires.

[0013] Furthermore, spectral information of the cyan chip and the emerald green chip is obtained, the spectral information including the wavelength range and intensity distribution of light emitted by each chip, the two spectral information are combined to obtain different spectral combinations, the chromaticity coordinates of the LED display device corresponding to each spectral combination are determined, and the spectral combination that meets the NVIS Green A standard is selected as the standard combination.

[0014] Furthermore, the interior of the black patch-type bracket and the area where the chipset is located are covered with a high heat-resistant encapsulation silicone layer.

[0015] Furthermore, the main wavelength of the silicate phosphor in the high heat-resistant encapsulation silica gel layer is 534.2nm, the error range is ±0.2nm, the peak wavelength is 518nm, the half-wave width is 62nm, and the excitation wavelength is 400-475nm. After the silicate phosphor is weakly excited by the cyan chip, the green light emitted is compounded with the standard combination generated by the chipset, and the spectral components are further adjusted to ensure that the chromaticity coordinates of the LED device meet the NVIS Green A standard.

[0016] Furthermore, the bonding wire is made of 99.99% metal wire.

[0017] Furthermore, the cyan chip and the emerald green chip are tested respectively until the LED device formed by the two chips meets the NVIS standard.

[0018] Furthermore, the spectral intensity of the black patch-type bracket complies with the NVIS standard.

[0019] Compared with the prior art, the beneficial effects of the present invention are at least as follows:

[0020] The present invention utilizes a 495-500nm cyan chip, a 538-542nm emerald green chip, a black patch bracket, green phosphor and potting glue to form a display device, and manufactures an LED device that meets the NVIS Green A standard through the combination of different spectrums, the weakening of the spectrum absorption of the bracket and the spectrum compounding of the green color paste. Since the LED light source adopts a composite spectrum of multiple materials, all domestic raw materials currently circulated in the market are adopted, which facilitates the mass production of product design and reduces the cost investment of the light source. In addition, the integrated structural bracket of the existing LED patch device is adopted, and the production process and flow are common to the existing lighting devices, so that the manufacturing process of the entire product is simpler, the cost is low, and the reliability is excellent. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a structural schematic diagram of an NVIS In GREEN A display device of the present invention;

[0022] Figure 2 It is the NVIS Green A standard diagram of the present invention;

[0023] In the figure: A1: cyan chip, A2: emerald green chip, B1: positive electrode pad, B2: negative electrode pad, J1: connecting bonding wire, J2: connecting bonding wire, J3: connecting bonding wire, C1: black bracket body. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0025] It is understood that the terms "first", "second", etc. used in this application may be used herein to describe various elements, but unless otherwise specified, these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. For example, without departing from the scope of this application, a first xx script may be referred to as a second xx script, and similarly, a second xx script may be referred to as a first xx script.

[0026] like Figure 1 As shown, an NVIS In GREEN A display device, the display device is an LED light-emitting device, comprising:

[0027] Black patch bracket C1;

[0028] The chipset, the positive electrode pad B1, and the negative electrode pad B2 are located on the black SMD bracket C1. The chipset includes a cyan chip A1 and an emerald green chip A2. The black SMD bracket and the chipset are connected in circuit based on bonding wires J1, J2, and J3.

[0029] The high heat-resistant encapsulation silica gel layer is mixed with 0.5-2% by weight of silicate phosphor, and the high heat-resistant encapsulation silica gel layer is located inside the black patch bracket and in the area where the chipset is located.

[0030] Specifically, Figure 1 As shown, it is a structural schematic diagram of the LED light-emitting device of the display device, wherein the black SMD bracket C1 is the main structure of the entire LED display device, which not only supports the LED chip and the pad, but also may include a mechanical structure for fixing the entire device. The positive pad B1 and the negative pad B2 are fixed on the black SMD bracket C1 by welding or pasting. The positive pad B1 is connected to the emerald green chip A2 of the LED through the bonding wire J1, and the negative pad B2 is connected to the cyan chip A1 of the LED through the bonding wire J1. The cyan chip A1 is connected to the emerald green chip A2 through J3.

[0031] High heat-resistant encapsulation silicone layer is a silicone material with high heat resistance, mainly used for the encapsulation of electronic components. The main function of the encapsulation silicone layer is to protect the internal electronic components, such as chipsets, from physical damage, environmental influences (such as humidity, temperature changes, etc.) and chemical corrosion. Silicate phosphor is a material that can emit visible light under the excitation of light of a specific wavelength. Adding 0.5-2% by weight of silicate phosphor to the encapsulation silicone layer can accurately control the spectrum emitted by LED display devices to meet specific visual or technical standards, such as NVIS Green A standard.

[0032] The two chips in the chipset are connected in series.

[0033] The size of the cyan chip A1 is 12*13mil, the power consumption is 15.5-16.9mw, the wavelength range is 495-500nm, and the size of the emerald green chip A2 is 8*10mil, the power consumption is 6-7mw, and the wavelength range is 538-542nm.

[0034] Specifically, the physical size of the two different specifications of LED chips are relatively small, which can consume less electricity while providing the same brightness. 495-500nm belongs to cyan light, while 538-542nm belongs to emerald green light. The selection of these wavelength ranges is crucial to achieving specific spectral output and color mixing.

[0035] A method for manufacturing an NVIS In GREEN A display device, the manufacturing method comprising the following steps:

[0036] A black SMD bracket C1 is made of pure black PPA material. Based on the fact that pure black PPA material absorbs all visible spectra, the cyan chip A1 and the emerald green chip A2 are mounted on the black SMD bracket C1. The negative and positive electrodes of the chipset are circuit-connected to the positive and negative electrodes of the black SMD bracket C1 through bonding wires J1 and J2, and the chipsets are connected to each other through bonding wires J3.

[0037] Specifically, a black SMD bracket C1 is made of pure black PPA (polypropylene) material. PPA material is selected for its good heat resistance, chemical stability and mechanical strength. The black bracket can absorb all spectra and reduce unnecessary light scattering and reflection, thereby weakening the spectral intensity so that the light emitted by the LED device meets the requirements of the NVIS Green A standard. The cyan chip A1 and the emerald green chip A2 are installed on the black SMD bracket. The two chips emit light with wavelengths of 495-500nm and 538-542nm respectively, corresponding to the NVIS Green A standard. The positive and negative electrodes of the chipset are circuit-connected to the positive and negative pins of the bracket through bonding wires J1, J2, and J3 to ensure that the current can flow through the chip correctly to make the chip emit light.

[0038] The spectral information of the cyan chip A1 and the emerald green chip A2 is obtained. The spectral information includes the wavelength range and intensity distribution of the light emitted by each chip. The two spectral information are combined to obtain different spectral combinations. The chromaticity coordinates of the LED display device corresponding to each spectral combination are determined, and the spectral combination that meets the NVIS Green A standard is selected as the standard combination.

[0039] Specifically, a spectrum analyzer or other measuring equipment is used to obtain the spectrum information of the cyan chip A1 and the emerald green chip A2, which includes the wavelength range and intensity distribution of the light emitted by each chip. The light of the cyan chip A1 and the emerald green chip A2 is combined by adjusting the ratio of the luminous intensity of the two chips or using optical filters, for example, combination 1: directly adding the spectra of the cyan and emerald green chips, the spectrum range obtained is between 480nm-550nm; combination 2: mixing 70% cyan light and 30% emerald green light, the spectrum obtained will be biased towards cyan, but with emerald green light components, and its specific wavelength range and intensity distribution depend on the mixing ratio; combination 3: alternating cyan and emerald green light in time, for example, alternating 1 second cyan light and 1 second emerald green light, this mode will produce a flickering effect when displayed continuously; for each combination, a colorimeter or colorimetric analysis software is required to determine its chromaticity coordinates. These coordinates are compared with the NVIS Green A standard to determine which combinations meet the standard. Combinations that meet the criteria will be selected as standard combinations for use in LED display devices to ensure that they have appropriate color performance under night vision equipment.

[0040] The inside of the black patch bracket C1 and the area where the chipset is located are covered with a high heat-resistant encapsulation silicone layer.

[0041] Specifically, a layer of high heat-resistant silicone is evenly applied inside the bracket and in the area where the chipset is located. After application, the silicone needs to undergo a curing process, which usually involves heating to a certain temperature to harden the silicone and form a stable protective layer. The main function of the high heat-resistant encapsulation silicone layer is to protect the LED chipset from physical damage and environmental factors (such as moisture, dust, etc.), thereby improving the durability of the LED display device and making it more resistant to external shocks and environmental changes.

[0042] The main wavelength of the silicate phosphor in the high heat-resistant encapsulation silicone layer is 534.2nm, the error range is ±0.2nm, the peak wavelength is 518nm, the half-wave width is 62nm, and the excitation wavelength is 400-475nm. After the silicate phosphor is weakly excited by the cyan chip, the green light emitted is compounded with the standard combination generated by the chipset to further adjust the spectral composition to ensure that the chromaticity coordinates of the LED device meet the NVIS Green A standard.

[0043] Specifically, the high heat-resistant encapsulation silica gel layer is a silica gel layer used to cover and protect the LED chipset. It has high heat resistance and can withstand the heat generated when the LED is working, while protecting the LED from physical damage. When the silicate phosphor is excited by light of a specific wavelength, it will emit light of a specific wavelength. In this case, the silicate phosphor is used to adjust the spectral output of the LED display device. The use of this silicate phosphor can enhance the performance of the LED display device, such as increasing brightness, improving color quality, and increasing visual comfort. Preferably, the silicate phosphor is mixed with a weight ratio of 0.5-2%, so that the spectrum emitted by the LED display device can be accurately controlled by using this phosphor without changing other properties of the silica gel layer, so that it meets specific visual or technical standards, such as the NVIS Green A standard.

[0044] The bonding wire is made of 99.99% metal wire.

[0045] Specifically, bonding wires are tiny metal wires used to connect different components in microelectronic packaging. They are responsible for transmitting current in LED display devices and ensuring that LED chips can work properly. 99.99% wire means that the purity of the bonding wire material is very high, which means that the impurity content in the wire is extremely low. High-purity wire can provide better conductivity and more stable electrical properties.

[0046] The cyan chip A1 and the emerald green chip A2 are tested separately until the LED device formed by the two chips meets the NVIS standard.

[0047] Specifically, after the LED display device is packaged, in order to ensure that each LED chip meets the design specifications and performance standards, each chip needs to be tested. Through testing, it can be verified whether the optical and electrical performance of each chip meets expectations. Spectral test: measure the spectrum emitted by the LED chip to ensure that its wavelength, color and intensity meet the requirements of the NVIS Green A standard; brightness test: check whether the brightness of the LED chip reaches the specified level to ensure visibility and clarity in various applications; color consistency: ensure that the color of light emitted by the LED chip is within an acceptable range and meets the needs of color reproduction; electrical characteristics: test the electrical parameters of the LED chip such as voltage, current and power consumption.

[0048] The spectral intensity of the black patch bracket C1 meets the NVIS standard.

[0049] Specifically, choosing a black material that can absorb a specific spectrum and conform to NVIS standards to make the bracket ensures that the LED display device can provide consistent spectral output in various environments, which is important for both military and civilian lighting equipment.

[0050] It should be understood that, although each step in the flow chart of each embodiment of the present invention is shown in sequence according to the indication of the arrow, these steps are not necessarily performed in sequence according to the order indicated by the arrow. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be performed in other orders. Moreover, at least a portion of the steps in each embodiment may include a plurality of sub-steps or a plurality of stages, and these sub-steps or stages are not necessarily performed at the same time, but can be performed at different times, and the execution order of these sub-steps or stages is not necessarily performed in sequence, but can be performed in turn or alternately with at least a portion of other steps or sub-steps or stages of other steps.

[0051] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0052] The above embodiments only express several implementation methods of the present invention, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the present invention. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

[0053] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An NVIS In GREEN A display device, characterized in that: The display device is an LED light emitting device, comprising: A chipset, the chipset comprising a cyan chip and an emerald green chip; A high heat-resistant encapsulation silica gel layer, wherein the high heat-resistant encapsulation silica gel layer is mixed with 0.5-2% by weight of silicate phosphor, and the high heat-resistant encapsulation silica gel layer is located in the area where the chip group is located.

2. The NVIS In GREEN A display device according to claim 1, characterized in that: The connection mode of the two chips in the chipset is series connection.

3. The NVIS In GREEN A display device according to claim 2, characterized in that: The size of the cyan chip is 12*13 mil, the power consumption is 15.5-16.9 mw, and the wavelength range is 495-500 nm. The size of the emerald green chip is 8*10 mil, the power consumption is 6-7 mw, and the wavelength range is 538-542 nm.

4. A method for manufacturing an NVIS In GREEN A display device, used for manufacturing an NVIS In GREEN A display device according to any one of claims 1 to 3, characterized in that: The production method comprises the following steps: The black patch bracket is made of pure black PPA material. Based on the fact that the pure black PPA material absorbs all visible spectra, the cyan chip and the emerald green chip are mounted on the black patch bracket. The negative and positive electrodes of the chipset are circuit-connected to the positive and negative electrodes of the black patch bracket through the bonding wires, and the chipsets are connected to each other through bonding wires.

5. The method for manufacturing an NVIS In GREEN A display device according to claim 4, characterized in that: The production method comprises the following steps: Acquire spectral information of the cyan chip and the emerald green chip, the spectral information including the wavelength range and intensity distribution of light emitted by each chip, combine the two spectral information to obtain different spectral combinations, determine the chromaticity coordinates of the LED display device corresponding to each spectral combination, and select the spectral combination that meets the NVIS Green A standard as the standard combination.

6. The method for manufacturing an NVIS In GREEN A display device according to claim 4, characterized in that: The interior of the black patch-type bracket and the area where the chipset is located are covered with a high heat-resistant encapsulation silicone layer.

7. The method for manufacturing an NVIS In GREEN A display device according to claim 6, characterized in that: The main wavelength of the silicate phosphor in the high heat-resistant encapsulation silica gel layer is 534.2nm, the error range is ±0.2nm, the peak wavelength is 518nm, the half-wave width is 62nm, and the excitation wavelength is 400-475nm. After the silicate phosphor is weakly excited by the cyan chip, the green light emitted is compounded with the standard combination generated by the chipset, and the spectral components are further adjusted to ensure that the chromaticity coordinates of the LED device meet the NVIS Green A standard.

8. The method for manufacturing an NVIS In GREEN A display device according to claim 4, characterized in that: The bonding wire is made of 99.99% metal wire.

9. The method for manufacturing an NVIS In GREEN A display device according to claim 5, characterized in that: The cyan chip and the emerald green chip are tested respectively until the LED device formed by the two chips meets the NVIS standard.

10. The method for manufacturing an NVIS In GREEN A display device according to claim 4, characterized in that: The spectral intensity of the black patch-type stent complies with the NVIS standard.

Images