Display device and method of manufacturing same

Abstract

The invention relates to a method of manufacturing a display device and the display device. A method of manufacturing a display device includes: disposing a material precursor of a bank layer on a substrate; irradiating a first ultraviolet ray onto at least a portion of the material precursor to form a first reflective portion; and removing at least a portion of the material precursor to form the bank layer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is based on and claims the benefit of priority from Korean Patent Application No. 10-2023-0122663 filed in the Korean Intellectual Property Office on September 14, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to a display device including a reflective layer and a method of manufacturing the display device. Background Art

[0004] The display device can intuitively display data and can be used as a display unit of a small product such as a mobile phone or a large product such as a television.

[0005] The display device may be configured using a liquid crystal display device using a backlight or a light-emitting display device including a display element capable of emitting light. The display element may include an emission layer. Summary of the invention

[0006] One or more embodiments include a display device including a reflective layer and a method of manufacturing the display device.

[0007] Aspects of the disclosure will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments thereof.

[0008] According to one or more embodiments, a method of manufacturing a display device includes: disposing a material precursor of a bank layer on a substrate; irradiating first ultraviolet rays onto at least a portion of the material precursor to form a first reflective portion; and removing at least a portion of the material precursor to form the bank layer.

[0009] The method may further include: before irradiating the first ultraviolet rays onto at least a portion of the material precursor, disposing a photomask on the material precursor, wherein the removed at least a portion of the material precursor includes at least a portion of the material precursor not irradiated by the first ultraviolet rays.

[0010] The material precursor may include silver ions (Ag+), and irradiating the first ultraviolet rays onto at least a portion of the material precursor may include reducing Ag+ into silver (Ag).

[0011] The material precursor may include an acrylic-based monomer or an epoxy-based monomer, wherein irradiating the first ultraviolet rays onto at least a portion of the material precursor may include synthesizing the acrylic-based monomer or the epoxy-based monomer into a polymer.

[0012] The material precursor for forming the bank layer may include at least one of a photoinitiator and a photosensitizer.

[0013] The material precursor may include silver nitrate (AgNO 3 ), and irradiating the first ultraviolet light onto at least a portion of the material precursor comprises: 3 The silver ions (Ag+) are reduced to silver (Ag).

[0014] The photomask may be aligned with the material precursor using infrared rays, and the transmittance of the material precursor to the infrared rays may be about 14% or more.

[0015] In irradiating the first ultraviolet rays onto at least a portion of the material precursor, the intensity of the first ultraviolet rays may be in a range of about 10 mJ to about 1500 mJ.

[0016] Irradiating the first ultraviolet rays onto at least a portion of the material precursor may include generating free radicals from the photosensitive material to provide free electrons to Ag+ of the material precursor.

[0017] In irradiating the first ultraviolet rays onto at least a portion of the material precursor, Ag atoms may aggregate to form Ag colloidal nanoparticles.

[0018] The method may further include, after forming the bank layer, irradiating second ultraviolet rays onto the bank layer to form a second reflective portion at a side surface of the bank layer.

[0019] The method may further include curing the bank layer by applying heat to the bank layer after irradiating the second ultraviolet rays onto the bank layer.

[0020] The reflective layer may be formed of a first reflective portion disposed at an upper surface of the bank layer and a second reflective portion disposed at a side surface of the bank layer, and the reflective layer may include Ag.

[0021] The reflective layer of the bank layer may have a transmittance of about 70% or more to visible light.

[0022] According to an embodiment, a method for manufacturing a display device may include: disposing a material precursor of a dam layer on an encapsulation layer; irradiating a first ultraviolet ray onto at least a portion of the material precursor to form a first reflective portion at an upper surface of the material precursor; after forming the first reflective portion, removing at least a portion of the material precursor disposed above a pixel electrode to form a dam layer; and irradiating a second ultraviolet ray onto the dam layer to form a second reflective portion at a side surface of the dam layer.

[0023] A method may further include curing the bank layer by applying heat after irradiating the second ultraviolet rays onto the bank layer.

[0024] The material precursor may include silver ions (Ag+) and acrylic monomers or epoxy monomers, wherein irradiating the first ultraviolet light onto at least a portion of the material precursor may include: simultaneously synthesizing the acrylic monomers or epoxy monomers into a polymer and reducing the silver ions (Ag+) to silver (Ag).

[0025] According to an embodiment, a display device may include: a substrate; a dam layer, which is arranged above the substrate, and the dam layer includes a reflective layer formed of silver (Ag) at the upper surface and side surfaces of the dam layer and a central portion including Ag ions (Ag+); and a light-transmitting layer, a first color quantum dot layer and a second color quantum dot layer, and the light-transmitting layer, the first color quantum dot layer and the second color quantum dot layer are arranged in an opening of the dam layer.

[0026] The bank layer may include an epoxy-based polymer or an acrylic-based polymer.

[0027] The reflective layer of the bank layer may have a transmittance of about 70% or more to visible light. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other aspects, features and advantages of the embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0029] Figure 1 is a schematic perspective view of a display device according to an embodiment;

[0030] Figure 2 is a schematic cross-sectional view of each pixel of a display device according to an embodiment;

[0031] Figure 3 Shows Figure 2 The color conversion of each optical unit of the penetration layer;

[0032] Figure 4 is an equivalent circuit diagram of a light emitting diode included in a display device and a pixel circuit electrically connected to the light emitting diode according to an embodiment;

[0033] Figure 5 It is along Figure 1 A schematic cross-sectional view of the display device taken along line II';

[0034] Figure 6 is an enlarged cross-sectional view showing a bank layer according to an embodiment;

[0035] Figure 7 , Figure 8 , Fig. 9 , Fig.10 , Fig.11 and Fig.12 is a schematic cross-sectional view of a method of manufacturing a bank layer; and

[0036] Fig.13 is a flow chart of a method for manufacturing a bank layer. DETAILED DESCRIPTION

[0037] Reference will now be made in detail to embodiments of which examples are shown in the accompanying drawings. In the accompanying drawings, the same reference numerals always refer to the same elements, and their repeated descriptions may be omitted. Embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Therefore, embodiments are described by reference to the accompanying drawings to explain various aspects of the present description.

[0038] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression "at least one of a, b, and c" means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0039] Hereinafter, one or more embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. However, the present disclosure can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. The embodiments are provided to fully convey the scope of the inventive concept to those skilled in the art.

[0040] It will be understood that although the terms “first,” “second,” etc. may be used herein to describe various elements, these elements should not be limited by these terms and these terms may only be used to distinguish one element from another.

[0041] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0042] It will be further understood that the terms “comprises and / or comprising” as used herein specify the presence of stated features or elements, but do not preclude the presence or addition of one or more other features or elements.

[0043] It will be understood that when a layer, region or element is referred to as being "formed on" another layer, region or element, the layer, region or element may be directly or indirectly formed on the other layer, region or element. That is, for example, intervening layers, regions or elements may be present.

[0044] For the convenience of explanation, the size and thickness of the elements in the drawings may be exaggerated. In other words, for example, for the convenience of explanation, the size and thickness of the elements in the drawings may be arbitrarily shown, and the embodiment is not limited thereto.

[0045] Embodiments may be implemented differently from the aspects described herein, and a specific process order may be performed differently from the described order. For example, two processes described in succession may be performed substantially simultaneously or in an order different from the described order.

[0046] It will be understood that when a layer, region, or component is referred to as being connected to another layer, region, or component, the layer, region, or component may be directly connected and / or indirectly connected to the other layer, region, or component. That is, for example, there may be intervening layers, regions, or components. For example, when a layer, region, or component is referred to as being electrically connected to another layer, region, or component, the layer, region, or component may be directly electrically connected and / or indirectly electrically connected to the other layer, region, or component.

[0047] In the following examples, the x-axis, y-axis, and z-axis are not limited to the three axes of the rectangular coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other, or can represent different directions that are not perpendicular to each other.

[0048] Figure 1 is a schematic perspective view of a display device DV according to the embodiment.

[0049] refer to Figure 1 , the display device DV may include a display area DA and a non-display area NDA disposed at the periphery of the display area DA. The display device DV may provide an image by an array of pixels two-dimensionally arranged in an xy plane in the display area DA. The pixels may include a first pixel PX1, a second pixel PX2, and a third pixel PX3. The pixels may display different colors. For example, the first pixel PX1 may be a blue pixel, the second pixel PX2 may be a green pixel, and the third pixel PX3 may be a red pixel.

[0050] The first pixel PX1 , the second pixel PX2 , and the third pixel PX3 may be regions that may emit blue light, green light, and red light, respectively, and the display device DV may provide an image by using the light emitted from the pixels.

[0051] The non-display area NDA may be an area where no image is displayed and may completely surround the display area DA. Various circuits or devices may be provided in the non-display area NDA. For example, a driver or a main voltage line configured to provide an electrical signal or power to a pixel circuit may be arranged in the non-display area NDA. In addition, a pad that may be electrically connected to an electronic component or a printed circuit board may be provided in the non-display area NDA.

[0052] like Figure 1As shown in , the display area DA may have a polygonal shape including a rectangular shape. For example, the display area DA may have a rectangular shape in which the horizontal length may be greater than the vertical length or the horizontal length may be less than the vertical length, or may have a square shape. Alternatively, the display area DA may have other shapes such as an elliptical shape or a circular shape.

[0053] Figure 2 is a schematic cross-sectional view of each pixel of the display device DV according to the embodiment.

[0054] refer to Figure 2 , the display device DV may include a circuit layer PC on the lower substrate 100. The circuit layer PC may include a first pixel circuit PC1, a second pixel circuit PC2, and a third pixel circuit PC3. The first pixel circuit PC1 to the third pixel circuit PC3 may be electrically connected to the first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 of the light emitting diode layer LED, respectively. The first light emitting diode LED1 to the third light emitting diode LED3 may be disposed on the first pixel circuit PC1 to the third pixel circuit PC3, respectively.

[0055] The first light emitting diode LED1 to the third light emitting diode LED3 may include an organic light emitting diode including an organic material. Alternatively, the first light emitting diode LED1 to the third light emitting diode LED3 may include an inorganic light emitting diode including an inorganic material. The inorganic light emitting diode may include a PN junction diode including a material based on an inorganic semiconductor. When a voltage is applied to the PN junction diode in the forward direction, electrons and holes may be injected, and the energy generated from the recombination of electrons and holes may be converted into light energy, and light of a specific color may be emitted. The inorganic light emitting diode described herein may have a width of several micrometers to several hundred micrometers or several nanometers to several hundred nanometers. Alternatively, the first light emitting diode LED1 to the third light emitting diode LED3 may be a light emitting diode including quantum dots. As described herein, the emission layer of the first light emitting diode LED1 to the third light emitting diode LED3 may include an organic material, an inorganic material, a quantum dot, both an organic material and a quantum dot, or both an inorganic material and a quantum dot.

[0056] Quantum dots can be photoactive, able to absorb and then emit light. The color of the light emitted by the quantum dots can depend on the size of the quantum dots. For example, quantum dots with a core diameter between about 6 nanometers and 7 nanometers can emit red.

[0057] The encapsulation layer 130 may be disposed on the first to third light emitting diodes LED1 to LED3. The color conversion transmission layer 303 may be disposed on the encapsulation layer 130. The first to third light emitting diodes LED1 to LED3 may emit light having the same color. For example, light (e.g., blue light Lb) emitted from the first to third light emitting diodes LED1 to LED3 may pass through the encapsulation layer 130 and the color conversion transmission layer 303.

[0058] The color conversion transmission layer 303 may include an optical unit that transmits the color of light (e.g., blue light Lb) emitted from the light emitting diode layer LED with or without converting the color of the emitted light. For example, the color conversion transmission layer 303 may include a quantum dot layer that converts the light (e.g., blue light Lb) emitted from the light emitting diode layer LED into light of a different color, and a light-transmitting layer 313 that allows the light (e.g., blue light Lb) emitted from the light emitting diode layer LED to pass through without changing its color. The color conversion transmission layer 303 may include a third color quantum dot layer 333 corresponding to a red pixel, a second color quantum dot layer 323 corresponding to a green pixel, and a light-transmitting layer 313 corresponding to a blue pixel. The third color quantum dot layer 333, the second color quantum dot layer 323, and the light-transmitting layer 313 of the color conversion transmission layer 303 may be disposed on the dike layer 500 (see Figure 5 ) in the opening.

[0059] In an embodiment, the third color quantum dot layer 333 may convert blue light Lb into red light Lr, and the second color quantum dot layer 323 may convert blue light Lb into green light Lg. The light-transmitting layer 313 may allow the blue light Lb to pass therethrough without changing its color.

[0060] The color filter layer 301 may be disposed above the color conversion transmission layer 303. The color filter layer 301 may include a first color filter layer 311, a second color filter layer 321, and a third color filter layer 331 of different colors. For example, the first color filter layer 311 may be a blue filter, the second color filter layer 321 may be a green filter, and the third color filter layer 331 may be a red filter.

[0061] The light whose color may be converted and transmitted by the color conversion transmission layer 303 may pass through the first color filter layer 311 to the third color filter layer 331. The light converted and transmitted by the color conversion transmission layer 303 and passing through the first color filter layer 311 to the third color filter layer 331 may have improved color purity. In addition, the color filter layer 301 may prevent or reduce external light (e.g., light incident from the outside thereof toward the display device DV) from being reflected and observed by the user.

[0062] The upper substrate 400 may be disposed above the color filter layer 301. The upper substrate 400 may include glass or a light-transmitting organic material. For example, the upper substrate 400 may include a light-transmitting organic material such as an acrylic-based resin.

[0063] In an embodiment, upper substrate 400 may be a type of substrate. Color filter layer 301 and color conversion transmission layer 303 may be formed on upper substrate 400. Upper substrate 400, color filter layer 301 and color conversion transmission layer 303 may be disposed on encapsulation layer 130, and color conversion transmission layer 303 faces encapsulation layer 130.

[0064] Alternatively, the color conversion transmission layer 303 and the color filter layer 301 may be sequentially formed on the encapsulation layer 130, and the upper substrate 400 may be formed on the color filter layer 301 by direct coating and curing of the upper substrate 400. Although not shown, other optical films such as an anti-reflection (AR) film may be disposed on the upper substrate 400.

[0065] The display device DV may be integrated into various devices such as a television, a billboard, a movie screen, a monitor, a tablet personal computer (PC), a laptop computer, and the like.

[0066] Figure 3 Shows Figure 2 The color conversion transmission layer 303 is provided for each optical unit.

[0067] refer to Figure 3 , the third color quantum dot layer 333 can convert the incident blue light Lb into red light Lr. Figure 3 As shown in FIG. 1 , the third color quantum dot layer 333 may include a first photosensitive polymer 1151 , third color quantum dots 1152 , and first scattering particles 1153 . The third color quantum dots 1152 and the first scattering particles 1153 may be distributed in the first photosensitive polymer 1151 .

[0068] The third color quantum dots 1152 may be excited by the blue light Lb and isotropically emit red light Lr having a wavelength greater than that of the blue light Lb. The first photosensitive polymer 1151 may include a light-transmitting organic material.

[0069] The first scattering particles 1153 can increase the color conversion efficiency by scattering the blue light Lb. For example, the first scattering particles 1153 can scatter the portion of the blue light Lb that has not been absorbed into the third color quantum dots 1152, which can increase the probability of the blue light Lb interacting with the third color quantum dots 1152. The first scattering particles 1153 can be, for example, titanium oxide (TiO 2) or metal particles. The third color quantum dots 1152 may be selected from II-VI group compounds, III-V group compounds, IV-VI group compounds, IV group elements, IV group compounds, or combinations thereof.

[0070] The second color quantum dot layer 323 can convert the incident blue light Lb into green light Lg. Figure 3 As shown in FIG. 1 , the second color quantum dot layer 323 may include a second photosensitive polymer 1161 , second color quantum dots 1162 , and second scattering particles 1163 . The second color quantum dots 1162 and the second scattering particles 1163 may be distributed in the second photosensitive polymer 1161 .

[0071] The second color quantum dots 1162 may be excited by the blue light Lb and isotropically emit green light Lg having a wavelength greater than that of the blue light Lb. The second photosensitive polymer 1161 may include a light-transmitting organic material.

[0072] The second scattering particles 1163 can increase the color conversion efficiency by scattering the blue light Lb. For example, the second scattering particles 1163 can scatter the portion of the blue light Lb that has not been absorbed into the second color quantum dots 1162, which can increase the probability of the blue light Lb interacting with the second color quantum dots 1162. The second scattering particles 1163 can be, for example, TiO 2 The second color quantum dots 1162 may be selected from II-VI group compounds, III-V group compounds, IV-VI group compounds, IV group elements, IV group compounds, or combinations thereof.

[0073] In an embodiment, the third color quantum dot 1152 and the second color quantum dot 1162 may include the same material. In an embodiment, the size of the third color quantum dot 1152 may be greater than the size of the second color quantum dot 1162.

[0074] The light-transmitting layer 313 can transmit the blue light Lb without converting the blue light Lb incident on the light-transmitting layer 313. Figure 3 As shown in , the light-transmitting layer 313 may include a third photosensitive polymer 1171. The third scattering particles 1173 may be distributed in the third photosensitive polymer 1171. The third photosensitive polymer 1171 may include an organic material such as a silicon-based resin or an epoxy-based resin, and the third photosensitive polymer 1171 may be light-transmitting and may include the same material as the first photosensitive polymer 1151 and the second photosensitive polymer 1161. The third scattering particles 1173 may scatter and emit blue light Lb and include the same material as the first scattering particles 1153 and the second scattering particles 1163.

[0075] Figure 4According to an embodiment, the display device DV (see Figure 1 ) is an equivalent circuit diagram of the light emitting diode OLED and the pixel circuit PC electrically connected to the light emitting diode OLED.

[0076] refer to Figure 4 , a first electrode (e.g., an anode) of a light emitting diode (e.g., a light emitting diode OLED) may be connected to the pixel circuit PC, and a second electrode (e.g., a cathode) of the light emitting diode OLED may be connected to a common voltage line 240 configured to provide a common power voltage ELVSS. The light emitting diode OLED may emit light at a brightness corresponding to a current provided from the pixel circuit PC.

[0077] Figure 4 The light emitting diode OLED may correspond to the one referred to in this article Figure 2 Each of the first light emitting diode LED1 to the third light emitting diode LED3 described above, and Figure 4 The pixel circuit PC may correspond to the pixel circuit PC of the present invention. Figure 2 Each of the first to third pixel circuits PC1 to PC3 described.

[0078] The pixel circuit PC may control the amount of current flowing from the driving power voltage ELVDD to the common power voltage ELVSS via the light emitting diode OLED in response to the data signal. The pixel circuit PC may include a driving transistor M1, a switching transistor M2, a sensing transistor M3, and a storage capacitor Cst.

[0079] The driving transistor M1, the switching transistor M2, and the sensing transistor M3 may each be an oxide semiconductor thin film transistor including a semiconductor layer including an oxide semiconductor or a silicon semiconductor thin film transistor including a semiconductor layer including polycrystalline silicon. The driving transistor M1, the switching transistor M2, and the sensing transistor M3 may each include a source electrode (or a source region) and a drain electrode (or a drain region).

[0080] The source electrode (or source region) of the driving transistor M1 may be connected to a driving voltage line 250 configured to provide a driving power voltage ELVDD, and the drain electrode (or drain region) of the driving transistor M1 may be connected to a first electrode (e.g., an anode) of the light emitting diode OLED. The gate electrode of the driving transistor M1 may be connected to a first node N1. The driving transistor M1 may control the amount of current flowing in the light emitting diode OLED from the driving power voltage ELVDD according to the voltage of the first node N1, but the positions of the source electrode (or source region) and the drain electrode (or drain region) of the driving transistor M1 may vary.

[0081] The source electrode (or source region) of the switching transistor M2 may be connected to the data line DL, and the drain electrode (or drain region) of the switching transistor M2 may be connected to the first node N1. The gate electrode of the switching transistor M2 may be connected to the scan line SL. When a scan signal is provided to the scan line SL, the switching transistor M2 may be turned on and may electrically connect the data line DL to the first node N1. However, the positions of the source electrode (or source region) and the drain electrode (or drain region) of the switching transistor M2 may vary.

[0082] The sensing transistor M3 may be an initialization transistor and / or a sensing transistor. The drain electrode (or drain region) of the sensing transistor M3 may be connected to the second node N2, and the source electrode (or source region) of the sensing transistor M3 may be connected to the sensing line ISL. The gate electrode of the sensing transistor M3 may be connected to the control line CL. However, the positions of the source electrode (or source region) and the drain electrode (or drain region) of the sensing transistor M3 may vary.

[0083] The storage capacitor Cst may be connected between the first node N1 and the second node N2. For example, a first capacitor electrode of the storage capacitor Cst may be connected to the gate electrode of the driving transistor M1, and a second capacitor electrode of the storage capacitor Cst may be connected to a first electrode (eg, anode) of the light emitting diode OLED.

[0084] exist Figure 4 In the light emitting diode OLED, the driving transistor M1, the switching transistor M2 and the sensing transistor M3 may each be an N-channel metal oxide semiconductor (NMOS) transistor, but the embodiment is not limited thereto. For example, at least one of the driving transistor M1, the switching transistor M2 and the sensing transistor M3 may be a P-channel metal oxide semiconductor (PMOS) transistor.

[0085] Figure 4 The light emitting diode OLED includes three transistors, but the embodiment is not limited thereto. For example, the pixel circuit PC may include four or more transistors.

[0086] Figure 5 It is along Figure 1 Schematic cross-sectional view of the display device DV taken along line II'.

[0087] refer to Figure 5 The display device DV according to the embodiment may include a display unit 10, quantum dot layers 323 and 333 (ie, a second color quantum dot layer 323 and a third color quantum dot layer 333), a light-transmitting layer 313, color filter layers 311, 321 and 331, and an adhesive layer 30.

[0088] The display unit 10 includes a lower substrate 100. The lower substrate 100 may include a glass material, a metal material, a ceramic material or a flexible material (e.g., a bendable material). When the lower substrate 100 is flexible (e.g., bendable), the lower substrate 100 may include, for example, a polymer resin such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate or cellulose acetate propionate. The lower substrate 100 may have a single-layer structure or a multi-layer structure including the above-mentioned materials, and when the lower substrate 100 has a multi-layer structure, various modifications may be made to the lower substrate 100; for example, the lower substrate 100 has a multi-layer structure, and the multi-layer structure includes two layers including a polymer resin and a barrier layer disposed between the two layers and including an inorganic material (silicon oxide, silicon nitride or silicon oxynitride, etc.).

[0089] The buffer layer 101 may be disposed above the lower substrate 100. The buffer layer 101 may include an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride and may be one or more layers. The buffer layer 101 may improve the flatness of the upper surface of the lower substrate 100 or prevent or reduce impurities or moisture from penetrating from the outside of the lower substrate 100 into the semiconductor layer 121 of the thin film transistor 120.

[0090] The pixel circuit may be disposed above the buffer layer 101, and above the pixel circuit, a display element layer electrically connected to the pixel circuit and including the first to third display elements may be disposed. In addition, the pixel circuit may include a thin film transistor 120 and a capacitor Cst. The electrical connection of the first to third display elements to the pixel circuit may be understood as the pixel electrodes 211, 213, and 215 of the first to third display elements being electrically connected to the thin film transistor 120.

[0091] The thin film transistor 120 may include a semiconductor layer 121 including amorphous silicon, polycrystalline silicon, or an organic semiconductor material, a gate electrode 123 , a source electrode 125 , and a drain electrode 127 .

[0092] The semiconductor layer 121 may be disposed above the buffer layer 101 and include amorphous silicon or polycrystalline silicon. As a detailed example, the semiconductor layer 121 may include an oxide of at least one material selected from indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), aluminum (Al), cesium (Cs), cerium (Ce), and zinc (Zn). The semiconductor layer 121 may include an oxide Zn-based material and include an oxide Zn, an oxide In-Zn, or an oxide Ga-In-Zn, etc. In addition, the semiconductor layer 121 may be an In-Ga-Zn-O (IGZO) semiconductor, an In-Sn-Zn-O (ITZO) semiconductor, or an In-Ga-Sn-Zn-O (IGTZO) semiconductor in which a metal such as In, Ga, or Sn is included in ZnO. The semiconductor layer 121 may include a channel region and a source region and a drain region arranged on both sides of the channel region.

[0093] The gate electrode 123 may be disposed above the semiconductor layer 121 to at least partially overlap the semiconductor layer 121. The gate electrode 123 may include various conductive materials including Mo, Al, Cu, or Ti, and have various layer structures. For example, the gate electrode 123 may have a single-layer structure including a Mo layer or an Al layer, or a multi-layer structure including Mo / Al / Mo.

[0094] The source electrode 125 and the drain electrode 127 may each include various conductive materials including Mo, Al, Cu, or Ti, and have various layer structures. For example, the source electrode 125 and the drain electrode 127 may have a single layer structure including a Ti layer or an Al layer, or a multilayer structure including Ti / Al / Ti. The source electrode 125 may contact the source region of the semiconductor layer 121 through the first contact hole. The drain electrode 127 may contact the drain region of the semiconductor layer 121 through the second contact hole.

[0095] In order to insulate the semiconductor layer 121 from the gate electrode 123, a gate insulating layer 103 may be provided between the semiconductor layer 121 and the gate electrode 123, and the gate insulating layer 103 may include an inorganic material such as silicon oxide, silicon nitride and / or silicon oxynitride. In addition, a first interlayer insulating layer 105 may be provided above the gate electrode 123. The first interlayer insulating layer 105 may have a certain dielectric constant, and the first interlayer insulating layer 105 may be an insulating layer including an inorganic material such as silicon oxide, silicon nitride and / or silicon oxynitride. The source electrode 125 and the drain electrode 127 may be provided above the first interlayer insulating layer 105. The insulating layer (or film) including the inorganic material may be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0096] The capacitor Cst may include a first electrode CE1 and a second electrode CE2. The second electrode CE2 may be disposed on the first electrode CE1. The first electrode CE1 and the second electrode CE2 may at least partially overlap each other. A first interlayer insulating layer 105 may be disposed between the first electrode CE1 and the second electrode CE2. The first electrode CE1 and the second electrode CE2 separated by the first interlayer insulating layer 105 may be configured to store charge. In this case, the first interlayer insulating layer 105 may be used as a dielectric layer of the capacitor Cst.

[0097] The first electrode CE1 may be disposed at the same level as the gate electrode 123. The first electrode CE1 may include the same material as the gate electrode 123. For example, the first electrode CE1 may include various conductive materials including Mo, Al, Cu, or Ti, and have various layer structures (e.g., a multilayer structure of Mo / Al / Mo). The second electrode CE2 may be disposed at the same level as the source electrode 125 and the drain electrode 127. The second electrode CE2 may include the same material as the source electrode 125 and the drain electrode 127. For example, the second electrode CE2 may include various conductive materials including Mo, Al, Cu, or Ti, and have various layer structures (e.g., a multilayer structure of Ti / Al / Ti).

[0098] The planarization layer 109 may be disposed above the thin film transistor 120 and the capacitor Cst. When the organic light emitting diode is disposed above the thin film transistor 120 as an example of the first to third display elements, the planarization layer 109 may substantially planarize the upper portion of the protective layer 107 covering the thin film transistor 120. The planarization layer 109 may include a general polymer such as polystyrene (PS), benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), polymethylmethacrylate (PMMA), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine-containing polymer, a p-xylene polymer, or a vinyl alcohol polymer, or any combination thereof.

[0099] The first to third display elements may be disposed over the planarization layer 109. The first to third display elements may be organic light emitting diodes including pixel electrodes 211, 213, and 215, an opposing electrode 230, and an intermediate layer 220 disposed between the pixel electrodes 211, 213, and 215 and the opposing electrode 230.

[0100] In an embodiment, the first to third display elements may include a first pixel electrode 211, a second pixel electrode 213, and a third pixel electrode 215, an opposing electrode 230 corresponding to the first pixel electrode 211, the second pixel electrode 213, and the third pixel electrode 215, and an intermediate layer 220 disposed between the opposing electrode 230 and the first pixel electrode 211 to the third pixel electrode 215. In addition, the intermediate layer 220 may include a first color emission layer configured to emit light of a wavelength included in a first wavelength band. For example, the first wavelength band may be between about 450nm and 495nm, and the first color may be blue. However, the embodiment is not limited thereto.

[0101] The first pixel electrode 211 to the third pixel electrode 215 of the first display element to the third display element can contact any one of the source electrode 125 and the drain electrode 127 through an opening (contact hole) formed in the planarization layer 109, and can be electrically connected to the thin film transistor 120. The first pixel electrode 211 to the third pixel electrode 215 can each be a transparent electrode (or a semi-transparent electrode) or a reflective electrode. In one or more embodiments, the first pixel electrode 211 to the third pixel electrode 215 can each include a reflective layer containing silver (Ag), magnesium (Mg), Al, platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or a compound thereof, and a transparent electrode layer or a semi-transparent electrode layer formed on the reflective layer. The transparent electrode layer or the semi-transparent electrode layer may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO) and aluminum zinc oxide (AZO). In addition, the first to third pixel electrodes 211 to 215 may have a stack structure of ITO / Ag / ITO.

[0102] The pixel defining layer 110 may be disposed above the planarization layer 109. The pixel defining layer 110 may define a pixel (or an emission area) by having an opening corresponding to each sub-pixel. In this case, the opening is formed to expose at least a portion of the central portion of the first pixel electrode 211 to the third pixel electrode 215. For example, the pixel defining layer 110 may be located between the first display element and the second display element, between the second display element and the third display element, and between the first display element and the third display element.

[0103] The pixel defining layer 110 can prevent arcing, etc., from being generated at the edges of the first pixel electrodes 211 to the third pixel electrodes 215 by increasing the distance between the edges of the first pixel electrodes 211 to the third pixel electrodes 215 and the opposing electrode 230 above the first pixel electrodes 211 to the third pixel electrodes 215. The pixel defining layer 110 may include one or more organic insulating materials selected from polyamide, polyimide, acrylic-based resin, BCB, and phenolic resin, and may be formed by a spin coating method, etc.

[0104] The intermediate layer 220 of the first display element to the third display element may include a low molecular weight material or a high molecular weight material. When the intermediate layer 220 includes a low molecular weight material, the intermediate layer 220 may have a structure in which a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL) and an electron injection layer (EIL) are stacked into a single structure or a complex structure and may be formed by vacuum deposition. When the intermediate layer 220 includes a high molecular weight material, the intermediate layer 220 may have a structure including HTL and EML. In this case, the HTL may include polyethylene dioxythiophene (PEDOT), and the emission layer may include a high molecular weight material such as a polyphenylene vinylene (PPV)-based material or a polyfluorene-based material. The intermediate layer 220 may be formed according to a screen printing method, an inkjet printing method, a deposition method, a laser induced thermal imaging (LITI) method, etc. The intermediate layer 220 is not limited thereto and may have various structures.

[0105] As described herein, the intermediate layer 220 may be a layer integrally formed over the first pixel electrode 211 of the first display element to the third pixel electrode 215 of the third display element. The intermediate layer 220 may be a layer patterned to correspond to each of the first pixel electrode 211 to the third pixel electrode 215. In an embodiment, the intermediate layer 220 may include a first color emission layer. The first color emission layer may be integrally formed over the first pixel electrode 211 to the third pixel electrode 215 or may be patterned to correspond to each of the first pixel electrode 211 to the third pixel electrode 215. The first color emission layer may emit light of a wavelength included in a first wavelength band and emit, for example, light in a wavelength range of about 450 nm to about 495 nm.

[0106] The relative electrode 230 of the first display element to the third display element can be arranged above the display area. As an example, the relative electrode 230 can be an integral layer to cover the entire display area and be arranged above the display area. That is, the relative electrode 230 can be formed integrally on the intermediate layer 220 and correspond to the first pixel electrode 211 to the third pixel electrode 215. In this case, the relative electrode 230 can cover the display area and extend to a part of the non-display area outside the display area. As a detailed example, the relative electrode 230 can be patterned to correspond to each of the first pixel electrode 211 to the third pixel electrode 215.

[0107] The counter electrode 230 may be a light-transmitting electrode or a reflective electrode. In one or more embodiments, the counter electrode 230 may be a transparent electrode or a semi-transparent electrode and may include a metal thin film having a low work function and including Li, Ca, LiF, Al, Ag, or Mg, or a compound thereof, or a material having a multilayer structure such as LiF / Ca or LiF / Al. In addition, a material including ITO, IZO, ZnO, or In 2 O 3 A transparent conductive oxide (TCO) layer may be further disposed over the metal film.

[0108] The organic light emitting diode may be covered and protected by the encapsulation layer 130. For example, the organic light emitting diode may be protected from external moisture, oxygen, etc. The encapsulation layer 130 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. For example, the encapsulation layer 130 may include a first inorganic encapsulation layer 131, an organic encapsulation layer 133, and a second inorganic encapsulation layer 135.

[0109] The first inorganic encapsulation layer 131 may cover the relative electrode 230 and include silicon oxide, silicon nitride and / or silicon oxynitride. Other layers such as a capping layer (not shown) may be provided between the first inorganic encapsulation layer 131 and the relative electrode 230. In the case where the first inorganic encapsulation layer 131 is formed along the structure below it, an uneven upper surface may be formed. The organic encapsulation layer 133 may be formed to cover the first inorganic encapsulation layer 131 and to form a flat upper surface on the first inorganic encapsulation layer 131. The organic encapsulation layer 133 may include one or more materials selected from polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate and HMDSO. The second inorganic encapsulation layer 135 may cover the organic encapsulation layer 133 and include silicon oxide, silicon nitride or silicon oxynitride, etc.

[0110] Although cracks may be generated in the multi-layer structure of the encapsulation layer 130, such cracks can be suppressed or prevented from propagating between the first inorganic encapsulation layer 131 and the organic encapsulation layer 133 or between the organic encapsulation layer 132 and the second inorganic encapsulation layer 135. Therefore, the formation of a path through which external moisture, oxygen, etc. can penetrate the display area can be prevented or reduced.

[0111] The quantum dot layers 323 and 333 and the light-transmitting layer 313 may be disposed on the adhesive layer 30 and the color filter layers 311, 321, and 331. The upper substrate 400 may be disposed above the color filter layers 311, 321, and 331. The first color filter layers 311 to 331 may correspond to the first pixel PX1 to the third pixel PX3, respectively. The first color filter layers 311 to 331 may be disposed on the first surface of the upper substrate 400. In this case, the term "first surface" refers to a surface (lower surface) in a direction toward the display unit 10 when the color filter layers 311, 321, and 331 are disposed above the display unit 10. When viewed in a direction (z-axis direction) perpendicular to the upper surface of the lower substrate 100 or the upper substrate 400 of the display unit 10, the first to third color filter layers 311 to 331 may overlap with the first pixel electrode 211 (or the emission layer of the first display element) to the third pixel electrode 215 (or the emission layer of the third display element). Therefore, the first to third color filter layers 311 to 331 may filter light emitted from the first to third display elements, respectively.

[0112] The first color filter unit 310 to the third color filter unit 330 may include a first color filter layer 311 to a third color filter layer 331, respectively. The first color filter unit 310 to the third color filter unit 330 may be disposed on the first surface (i.e., the lower surface) of the upper substrate 400. The light-transmitting layer 313 may be disposed on the first color filter layer 311, the second color quantum dot layer 323 may be disposed on the second color filter layer 321, and the third color quantum dot layer 333 may be disposed on the third color filter layer 331.

[0113] In detail, the first color filter unit 310 may include a first color filter layer 311 and a light-transmitting layer 313 , the second color filter unit 320 may include a second color filter layer 321 and a second color quantum dot layer 323 , and the third color filter unit 330 may include a third color filter layer 331 and a third color quantum dot layer 333 .

[0114] The first color filter layer 311 can pass light with a wavelength range of about 450nm to about 495nm, and can block light of other wavelengths. The second color filter layer 321 can pass light with a wavelength range of about 495nm to about 570nm, and can block light of other wavelengths. The third color filter layer 331 can pass light with a wavelength range of about 630nm to about 780nm, and can block light of other wavelengths. The first color filter layer 311 to the third color filter layer 331 can reduce external reflection of the display device DV.

[0115] For example, when external light reaches the first color filter layer 311, light with a wavelength range of about 450nm to about 495nm can pass through the first color filter layer 311, and light of other wavelengths can be absorbed into the first color filter layer 311. Therefore, light with a wavelength range of about 450nm to about 495nm among the external light incident on the display device DV can pass through the first color filter layer 311, and a portion of the light can be reflected from the relative electrode 230 or the first pixel electrode 211 of the first display element under the first color filter layer 311 and can be emitted to the outside. The portion of the external light incident on the position of the first pixel PX1 can be reflected to the outside, and the external light reflection can be reduced. Similar processing of external light can also be applied to the second color filter layer 321 and the third color filter layer 331.

[0116] The second color quantum dot layer 323 may convert light having a first wavelength band and generated in the intermediate layer 220 of the second display element into light having a second wavelength band. For example, when light having a wavelength range of about 450 nm to about 495 nm is generated in the intermediate layer 220 of the second display element, the second color quantum dot layer 323 may convert the generated light into light having a wavelength range of about 495 nm to about 570 nm. Therefore, light having a wavelength range of about 495 nm to about 570 nm may be emitted from the second pixel PX2 to the outside.

[0117] The third color quantum dot layer 333 may convert light having a first wavelength band and generated in the intermediate layer 220 of the third display element into light having a third wavelength band. For example, when light having a wavelength range of about 450 nm to about 495 nm is generated in the intermediate layer 220 of the third display element, the third color quantum dot layer 333 may convert the generated light into light having a wavelength range of about 630 nm to about 780 nm. Therefore, light having a wavelength range of about 630 nm to about 780 nm may be emitted from the third pixel PX3 to the outside.

[0118] The second color quantum dot layer 323 and the third color quantum dot layer 333 may each have a configuration in which quantum dots are distributed in a resin.

[0119] Quantum dots can have a size of about several nanometers, and the wavelength of the light emitted by the quantum dots can be based on the particle size of the quantum dots. That is, quantum dots can emit light of a specific color according to the particle size, and therefore, quantum dots can have various emission colors such as blue, red and green. The particle size of quantum dots can have a half-maximum full width (FWHM) of an emission wavelength spectrum of about 45nm or less (preferably about 40nm or less and more preferably about 30nm or less), and color purity and color reproducibility can be improved within these ranges. In addition, the light emitted from the quantum dots can be emitted in all directions, and therefore, the viewing angle of light can be improved. In addition, the shape of the quantum dots is not specifically limited, and in more detail, the shape of the quantum dots can be circular, pyramidal, multi-armed, cubic nanoparticles, nanotubes, nanowires, nanofibers or plate-like nanoparticles, etc. In addition, quantum dots can include semiconductor materials such as cadmium sulfide (Cds), cadmium telluride (CdTe), zinc sulfide (ZnS) or indium phosphide (InP).

[0120] The resin included in the second color quantum dot layer 323 and the third color quantum dot layer 333 may be transparent. The resin included in the second color quantum dot layer 323 and the third color quantum dot layer 333 may be of various types. For example, a polymer resin such as a silicon-based resin, an epoxy-based resin, an acrylic, BCB, or HMDSO may be used as a material for forming the second color quantum dot layer 323 and the third color quantum dot layer 333.

[0121] The first color filter unit 310 may not include a quantum dot layer. The first color filter unit 310 may include a light-transmitting layer 313. For example, the first to third display elements may be disposed between the opposing electrode and the first to third pixel electrodes 211 to 215 and include an intermediate layer 220 including a first color emission layer for emitting light of a wavelength included in a first wavelength band. In this case, without using a quantum dot layer to convert the wavelength of light, light of a wavelength included in the first wavelength band generated in the intermediate layer 220 may be emitted from the first pixel PX1 to the outside. Since the quantum dot layer may not be included in the first pixel PX1, the first color filter unit 310 may not include a quantum dot layer, and may include a light-transmitting layer 313 including a transmissive resin.

[0122] The light-transmitting layer 313 may include scattering particles. The scattering particles may reduce the brightness ratio between the front and the side of the light emitted from the pixel. The light generated from the pixel electrode may pass through the color filter unit and may be emitted from each pixel to the outside, and in the case where the brightness at the front is relatively high and the brightness at the side is relatively low, the light may have a brightness ratio between the front and the side of the light emitted from the pixel. At a high brightness ratio, performance degradation such as a reduction in viewing angle or a shift in color coordinates may occur. In the display device DV according to an embodiment, the light-transmitting layer 313 may include scattering particles, the light passing through the light-transmitting layer 313 may be scattered by the scattering particles, and therefore, the brightness ratio between the front and the side may be reduced.

[0123] The adhesive layer 30 may be disposed on the quantum dot layers 323 and 333 and the light-transmitting layer 313. The adhesive layer 30 may be disposed between the color filter layers 311, 321, and 331 and the quantum dot layers 323 and 333 and the light-transmitting layer 313. The adhesive layer 30 may be, for example, an optically clear adhesive (OCA), but the embodiment is not limited thereto. In addition, the adhesive layer 30 may include a filler (not shown). The filler may be disposed on the display unit 10 or on the quantum dot layers 323 and 333 and the light-transmitting layer 313. For example, the filler may be disposed between the display unit 10 and the quantum dot layers 323 and 333 and the light-transmitting layer 313. In another example, the filler may be disposed between the quantum dot layers 323 and 333 and the light-transmitting layer 313 and the color filter layers 311, 321, and 331. The filler may buffer external impacts, etc. The filler may include an organic material such as methyl silicone, phenyl silicone or polyimide, a urethane-based resin as an organic sealant, an epoxy-based resin, an acrylic-based resin, or silicone as an inorganic sealant, but the embodiment is not limited thereto. According to an embodiment, the adhesive layer 30 may be omitted.

[0124] The partition 600 may be disposed between the first color filter layer 311, the second color filter layer 321, and the third color filter layer 331. For example, the partition 600 may be disposed on or around the side of each of the first color filter layer 311, the second color filter layer 321, and the third color filter layer 331. The partition 600 may define first to third color regions in the space between adjacent partitions 600, and the first to third color regions correspond to the first to third pixels PX1 to PX3, respectively.

[0125] The partition 600 may be patterned. The pattern of the partition 600 may correspond to the display area DA (see Figure 1) in the non-display portion of the display unit 10. When the display unit 10, the quantum dot layers 323 and 333, the light-transmitting layer 313, and the color filter layers 311, 321, and 331 may be bonded, the pattern of the partition 600 may be used as a light-shielding layer. In other words, light may be emitted to the outside through the first color region to the third color region, which may correspond to a region where no partition 600 is positioned.

[0126] The separator 600 may include a material (e.g., a photoresist) that undergoes a chemical change when exposed to light. For example, the separator 600 may include an aromatic diazide, methacrylate, or cinnamate, etc. as a negative photoresist and may include PMMA, naphthoquinone diazide, or polybutene-1-sulfone, etc. as a positive photoresist, but the material is not limited thereto. In an embodiment, the separator 600 may include a black matrix, a black pigment, or a metal material, etc. The separator 600 may be used as a light shielding layer and may include a reflective material such as Al or Ag that can increase light efficiency.

[0127] First to third color filter layers 311 to 331 may be formed between the partitions 600 and may correspond to first to third pixels PX1 to PX3, respectively. The color filter layers 311, 321, and 331 may be formed by, for example, an inkjet process, but the embodiment is not limited thereto.

[0128] In an embodiment, the bank layer 500 may be disposed between the light-transmitting layer 313, the second color quantum dot layer 323, and the third color quantum dot layer 333. In other words, the light-transmitting layer 313, the second color quantum dot layer 323, and the third color quantum dot layer 333 may be disposed in the opening of the bank layer 500.

[0129] The bank layer 500 may include a reflective layer 501 and a central portion 502. The reflective layer 501 may form an upper surface and a side surface of the bank layer 500. The reflective layer 501 may include Ag. The bank layer 500 may reflect light emitted from each of the light-transmitting layer 313, the second color quantum dot layer 323, and the third color quantum dot layer 333 in a lateral direction, and may increase the light efficiency of the display device DV. In addition, the bank layer 500 may prevent or inhibit light emitted from the light-transmitting layer 313 from irradiating toward the second color quantum dot layer 323 and the third color quantum dot layer 333. Similarly, light emitted from the second color quantum dot layer 323 and the third color quantum dot layer 333 may be prevented or inhibited from irradiating onto each other.

[0130] The bank layer 500 may be disposed on the encapsulation layer 130. That is, the lower surface of the bank layer 500 may be disposed on the encapsulation layer 130. The bank layer 500 may have an upper surface having a height higher than that of the upper surfaces of the light-transmitting layer 313, the second color quantum dot layer 323, and the third color quantum dot layer 333. The upper surface of the bank layer 500 may be substantially flat. The side surface of the bank layer 500 may be substantially convex between the upper surface and the lower surface of the bank layer 500. That is, adjacent portions of the bank layer 500 may have side surfaces extending toward each other at the middle portion thereof.

[0131] Figure 6 is an enlarged cross-sectional view showing the bank layer 500 according to an embodiment. In detail, Figure 6 Schematically shows a Figure 5 The embankment layer is 500.

[0132] The reflective layer 501 is disposed adjacent to the upper surface and the side surface of the bank layer 500, and the central portion 502 is arranged at the central portion of the bank layer 500. The reflective layer 501 may include a silver (Ag) 52 material. In detail, the reflective layer 501 may include Ag colloidal nanoparticles. The central portion 502 of the bank layer 500 may include silver ions (Ag+) 51. In addition, the bank layer 500 may include a polymer 62 such as an epoxy-based polymer and an acrylic-based polymer.

[0133] The reflectivity of the reflective layer 501 included in the bank layer 500 to visible light may be about 70% or more. Light emitted in a lateral direction from each of the light-transmitting layer 313, the second color quantum dot layer 323, and the third color quantum dot layer 333 may be reflected from the reflective layer 501, and light extraction efficiency may be increased.

[0134] Figure 7 , Figure 8 , Fig. 9 , Fig.10 , Fig.11 and Fig.12 is a schematic cross-sectional view of a method of manufacturing the bank layer 500 . Fig.13 is a flow chart of a method for manufacturing the bank layer 500 .

[0135] refer to Figure 7 and Fig.13, at S100, a material precursor 500s of a bank layer may be disposed on a substrate. For example, the material precursor 500s may be disposed on the display unit 10. The material precursor 500s may be transparent. Infrared rays 41 may be irradiated onto the material precursor 500s and the alignment key 21 may be used to align the mask. The transmittance of the material precursor 500s to the infrared rays 41 may be at least about 14%. Since the material precursor 500s may be transparent and the transmittance to the infrared rays 41 may be at least about 14%, when the infrared rays 41 are irradiated onto the material precursor 500, the infrared rays 41 may reach the alignment key 21 disposed under the material precursor 500s and the infrared rays 41 may be reflected, and by the reflected infrared rays 41, the photomask (photomask 80, see Figure 8 ) can be aligned to form a bank layer (bank layer 500, see Figure 6 When the material precursor 500s is opaque and the transmittance to the infrared ray 41 may be less than about 14%, the infrared ray 41 irradiated on the material precursor 500s may not reach the alignment key 21, and the photomask 80 may not be aligned to the position where the bank layer 500 is to be formed, and the display device DV (see Figure 5 ) may be misaligned, resulting in defects in the display device DV.

[0136] The material precursor 500s may include Ag+51. In detail, the material precursor 500s may include silver nitrate (AgNO 3 ) as a photochemical metal precursor. According to an embodiment, the material precursor 500s may include an acrylic monomer or an epoxy monomer 61. When exposed to ultraviolet light (ultraviolet light 42, see Figure 8 ), Ag+51 included in the material precursor 500s may be reduced to Ag52, and the atoms of Ag 52 may form Ag colloidal nanoparticles. In addition, the acrylic monomer or epoxy monomer 61 may be synthesized into a polymer (polymer 62, see Figure 6 ).

[0137] In an embodiment, the material precursor 500s may include a photosensitizer for photoinduced or photocatalytic reduction such as a benzophenone derivative or diphenyl (2,4,6-trimethylbenzoyl) phosphine oxide. According to an embodiment, the material precursor 500s may include a solvent such as propylene glycol monomethyl ether acetate (PGMEA) or a radical photoinitiator such as Irgacure to initiate polymerization.

[0138] refer to Figure 8 , Fig. 9 and Fig.13The photomask 80 may be disposed on at least a portion of the material precursor 500s. By placing an alignment key (alignment key 21, see Figure 7 ) reflected infrared 41 (see Figure 7 ) is irradiated onto the material precursor 500s, and the photomask 80 can be aligned to the bank layer to be formed (bank layer 500, see Figure 6 )’s location.

[0139] After the photomask 80 is aligned, ultraviolet rays 42 may be irradiated onto the photomask 80 and the material precursor 500s (S110). The ultraviolet rays 42 may be irradiated onto the material precursor 500s exposed by the photomask 80. The ultraviolet rays 42 may not be irradiated onto the material precursor 500s on which the photomask 80 is disposed.

[0140] When ultraviolet rays 42 are irradiated onto at least a portion of the material precursor 500s, free radicals can be generated from a photosensitive material capable of providing free electrons to Ag+51. Therefore, Ag+51 included in the material precursor 500s to which the ultraviolet rays 42 are irradiated can be reduced to Ag 52. The atoms of Ag 52 can gather and form Ag colloidal nanoparticles. In detail, the upper surface of the material precursor 500s can be irradiated with more ultraviolet rays 42 than its interior, and more Ag colloidal nanoparticles can be located in the portion of the material precursor 500s adjacent to the upper surface of the material precursor 500s compared to its interior, and the first reflecting portion can be formed at the upper surface of the material precursor 500s. In addition, the acrylic monomer or epoxy monomer 61 included in the material precursor 500s can be synthesized into a polymer 62, wherein the material precursor 500s is irradiated with ultraviolet rays 42. In detail, free radicals from a free radical photoinitiator such as Irgacure may initiate synthesis of the polymer 62 such as an acrylic-based polymer or an epoxy-based polymer.

[0141] In the process of irradiating the ultraviolet rays 42 onto at least a portion of the material precursor 500s, the intensity of the ultraviolet rays 42 may be in the range of about 10 mJ to about 1,500 mJ. When the intensity of the ultraviolet rays 42 is less than about 10 mJ, the intensity may not be sufficient to induce the reduction of Ag+51 of the material precursor 500s to Ag 52 or the synthesis of the polymer 62 such as an epoxy-based polymer or an acrylic-based polymer, and therefore, the reduction of Ag+51 and the synthesis of the polymer 62 may not occur. When the intensity of the ultraviolet rays 42 is greater than about 1,500 mJ, the ultraviolet rays 42 may irradiate the material precursor 500s except for the bank layer (bank layer 500, see Figure 6When the ultraviolet rays 42 are irradiated onto the portion having the photomask 80 except the portion where the bank layer 500 is to be formed, it may be challenging to control the size of the bank layer 500, and the size of the bank layer 500 may exceed a certain level, which causes defects in the display device DV.

[0142] refer to Fig.10 and Fig.13 , the material precursor can be removed for 500s (see Fig. 9 ) is arranged with a photomask (photomask 80, see Figure 8 ) and not irradiated by the ultraviolet rays 42. Since at least a portion of the material precursor 500s on which the ultraviolet rays 42 are not irradiated can be removed, the bank layer 500 can be formed (S120). In detail, at least a portion of the material precursor 500s on which the ultraviolet rays 42 are not irradiated can be removed using a developer. That is, the material precursor 500s can be patterned to form the bank layer 500.

[0143] refer to Fig.11 and Fig.13 , after the material precursor has been removed for 500s (see Fig. 9 ) and after the bank layer 500 is formed, the ultraviolet rays 42 may be secondarily irradiated onto the bank layer 500 (S130). In the process of secondarily irradiating the ultraviolet rays 42 onto the bank layer 500, the ultraviolet rays 42 may be irradiated onto the upper surface of the bank layer 500 and the side surface of the bank layer 500. As the ultraviolet rays 42 are irradiated onto the side surface of the bank layer 500, Ag colloidal nanoparticles in which atoms of Ag 52 are aggregated may be formed on the side surface of the bank layer 500. The Ag colloidal nanoparticles may be formed on the upper surface and the side surface of the bank layer 500, and a second reflective portion may be formed at the side surface of the bank layer 500. The reflective layer 501 may include a first reflective portion formed at the upper surface of the bank layer 500 and a second reflective portion formed at the side surface of the bank layer 500.

[0144] The bank layer 500 may include a reflective layer 501 disposed at the upper surface and the side surface of the bank layer 500 and including Ag52. The reflectivity of the reflective layer 501 to visible light may be about 70% or more. The reflectivity of the reflective layer 501 of the bank layer 500 to visible light may be about 70% or more and the reflectivity of the reflective layer 501 ... Figure 5 ), the second color quantum dot layer 323 (see Figure 5 ) and the third color quantum dot layer 333 (see Figure 5 ) in a lateral direction may be reflected from the reflective layer 501. According to an embodiment, the bank layer 500 may include the reflective layer 501 and may improve the display device DV (see Figure 5 ) light extraction efficiency.

[0145] refer to Fig.12 and Fig.13 , after secondary exposure to ultraviolet 42 (see Fig.11 ), a process of thermally curing the bank layer 500 may be additionally or selectively performed (S140). In the process of thermally curing the bank layer 500, heat 43 may be applied to the bank layer 500, and the bank layer 500 may be cured. In detail, the acrylic monomer or epoxy monomer (acrylic monomer or epoxy monomer 61, see Figure 7 ) can be synthesized as a polymer (polymer 62, see Figure 6 ).

[0146] In order to improve the light extraction efficiency of the display device, the display device may include a reflective layer on the side surface and the lower surface of the bank layer. Although the reflective layer can be formed on the side surface and the lower surface of the bank layer using a process of stacking reflective layers, the process may be complicated and time-consuming, and therefore, the efficiency of the process of forming the display device may be reduced.

[0147] In an embodiment, irradiating the ultraviolet rays 42 onto the material precursor 500s for forming the bank layer can simultaneously reduce Ag+51 in the material precursor 500s for forming the bank layer to Ag 52 and form Ag colloidal nanoparticles from atoms of Ag 52 on the upper surface of the material precursor 500s irradiated with the ultraviolet rays 42 and synthesize the acrylic monomer or epoxy monomer 61 into the polymer 62. After the bank layer 500 is formed by removing at least a portion of the material precursor 500s, the ultraviolet rays 42 can be irradiated onto the bank layer 500 for a second time to form Ag colloidal nanoparticles on the side surface of the bank layer 500, which enables the formation of the reflective layer 501 adjacent to the upper and side surfaces of the bank layer 500 in the bank layer 500. The bank layer 500 may include the reflective layer 501. By the process of irradiating the ultraviolet rays 42, the reflective layer 501 adjacent to the upper and side surfaces of the bank layer 500 can be formed in the bank layer 500. The reflective layer 501 may help improve light extraction efficiency in the display device DV and simultaneously achieve time saving and process simplification in the manufacture of the display device DV, thereby improving efficiency in the manufacturing process of the display device.

[0148] According to one or more embodiments, a display device having improved efficiency and reliability and a method of manufacturing the display device may be implemented. However, the scope of the present disclosure is not limited to this effect.

[0149] It should be understood that the embodiments described herein should be considered in a descriptive sense and not for purposes of limitation. Descriptions of features or aspects should be considered applicable to other similar features or aspects. Although embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and detail may be made therein without departing from the spirit and scope as defined by the appended claims.

Claims

1. A method for manufacturing a display device, wherein: The method comprises: placing a material precursor of the bank layer on a substrate; irradiating first ultraviolet rays onto at least a portion of the material precursor to form a first reflective portion; and At least a portion of the material precursor is removed to form the bank layer.

2. The method according to claim 1, wherein: The method further comprises: Before irradiating the first ultraviolet rays onto the at least a portion of the material precursor, placing a photomask on the material precursor, The at least one portion of the material precursor that is removed includes at least one portion of the material precursor that is not irradiated by the first ultraviolet light.

3. The method according to claim 1, wherein: The material precursor includes silver ions, and irradiating the first ultraviolet rays onto the at least a portion of the material precursor includes reducing the silver ions into silver.

4. The method according to claim 1, wherein: The material precursor includes an acrylic monomer or an epoxy monomer, Wherein, irradiating the first ultraviolet rays onto the at least a portion of the material precursor includes: synthesizing the acrylic monomer or the epoxy monomer into a polymer.

5. The method according to claim 1, wherein: The material precursor includes at least one of a photoinitiator and a photosensitizer.

6. The method according to claim 1, wherein: The material precursor includes silver nitrate, and irradiating the first ultraviolet rays onto the at least a portion of the material precursor includes reducing silver ions of the silver nitrate into silver.

7. The method according to claim 1, wherein: The method further includes aligning a photomask with the material precursor using infrared rays, wherein a transmittance of the material precursor to the infrared rays is 14% or more.

8. The method according to claim 1, wherein: In the irradiating the first ultraviolet rays onto the at least a portion of the material precursor, an intensity of the first ultraviolet rays is in a range of 10 mJ to 1,500 mJ.

9. The method according to claim 3, wherein: The irradiating the first ultraviolet rays onto the at least a portion of the material precursor includes generating free radicals from a photosensitive material to provide free electrons to the silver ions of the material precursor.

10. The method according to claim 3, wherein: In the irradiating the first ultraviolet rays onto the at least a portion of the material precursor, silver atoms are aggregated to form silver colloidal nanoparticles.

11. The method according to claim 1, wherein: The method further includes, after the forming of the bank layer, irradiating second ultraviolet rays onto the bank layer to form a second reflective portion at a side surface of the bank layer.

12. The method according to claim 11, wherein: The method further includes curing the bank layer by applying heat to the bank layer after irradiating the second ultraviolet rays onto the bank layer.

13. The method according to claim 11, wherein: The reflective layer is formed of the first reflective portion disposed at an upper surface of the bank layer and the second reflective portion disposed at the side surface of the bank layer, and the reflective layer includes silver.

14. The method according to claim 13, wherein: The reflective layer of the bank layer has a transmittance of 70% or more to visible light.

15. A method for manufacturing a display device, wherein: The method comprises: disposing a material precursor of the bank layer on the encapsulation layer; irradiating first ultraviolet rays onto at least a portion of the material precursor to form a first reflective portion at an upper surface of the material precursor; After the forming of the first reflective portion, removing at least a portion of the material precursor disposed above the pixel electrode to form a bank layer; and Second ultraviolet rays are irradiated onto the bank layer to form a second reflective portion at a side surface of the bank layer.

16. The method according to claim 15, wherein: The method further includes curing the bank layer by applying heat after irradiating the second ultraviolet rays onto the bank layer.

17. The method according to claim 15, wherein: The material precursor includes silver ions and acrylic monomers or epoxy monomers. Wherein, irradiating the first ultraviolet rays onto the at least a portion of the material precursor includes: simultaneously synthesizing the acrylic monomer or the epoxy monomer into a polymer and reducing the silver ions into silver.

18. A display device, wherein: The display device comprises: substrate; a bank layer disposed over the substrate, the bank layer including a reflective layer formed of silver at an upper surface and a side surface of the bank layer and a central portion including silver ions; and A light-transmitting layer, a first color quantum dot layer and a second color quantum dot layer are provided in the opening of the bank layer.

19. The display device according to claim 18, wherein: The bank layer includes an epoxy-based polymer or an acrylic-based polymer.

20. The display device according to claim 18, wherein: The reflective layer of the bank layer has a transmittance of 70% or more to visible light.

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