Substrate holding apparatus, substrate processing apparatus, separation method, and article manufacturing method

Abstract

The invention relates to a substrate holding apparatus, a substrate processing apparatus, a separation method, and an article manufacturing method. The substrate holding apparatus includes a holder configured to hold a substrate and a gas supplier configured to supply a gas between the substrate and the holder, in which the gas supplier supplies the gas based on information on an adhesion force between the substrate and the holder when the substrate is separated from the holder holding the substrate.

Description

Technical Field

[0001] The invention relates to a substrate holding device, a substrate processing device, a separation method and an article manufacturing method. Background Art

[0002] A substrate processing device used in the manufacturing process of semiconductor devices, liquid crystal display devices, etc. may include a substrate chuck (substrate holder) for holding a substrate. The smoothness of holding and releasing the substrate by the substrate chuck is related not only to productivity but also to the wear resistance of each of the substrate and the substrate chuck.

[0003] Japanese Patent Laid-Open No. 2019-505841 describes that, when a substrate is unloaded from a support table, gas is supplied into a gap between a base surface of the support table and the substrate through a gas flow opening formed in the support table.

[0004] In the case where the substrate chuck adsorbs the substrate, an adhesion force acts between the substrate and the substrate chuck even after the adsorption is released. When separating the substrate from the substrate chuck, if the supply amount of gas is too large relative to the adhesion force, the substrate floats from the substrate chuck and the substrate slides laterally. On the other hand, when separating the substrate from the substrate chuck, if the supply amount of gas is too small relative to the adhesion force, the substrate is not separated from the substrate chuck, resulting in wear of the substrate chuck. Since the adhesion force depends on the characteristics of the substrate and the characteristics of the substrate chuck, it is preferred to appropriately set the gas supply for separating the substrate from the substrate chuck each time according to the adhesion force. Summary of the invention

[0005] The present invention provides a technique that is advantageous in suppressing wear of each of a substrate and a holder that holds the substrate.

[0006] The present invention provides, in its first aspect, a substrate holding device, comprising a holder configured to hold a substrate and a gas supplier configured to supply gas between the substrate and the holder, wherein, when the substrate is separated from the holder holding the substrate, the gas supplier supplies gas based on information about the adhesion between the substrate and the holder.

[0007] The present invention, in its second aspect, provides a substrate processing device, which includes a holder configured to hold a substrate and a controller configured to control the supply of gas between the substrate and the holder, wherein, when the substrate is separated from the holder holding the substrate, the controller is configured to control the supply of gas based on information about the adhesion between the substrate and the holder.

[0008] The present invention, in its third aspect, provides a separation method for separating a substrate from a retainer that retains the substrate, the separation method comprising: acquiring information about the adhesion between the substrate and the retainer, supplying gas between the substrate and the retainer based on the information about the adhesion acquired in the acquisition step, and separating the substrate from the retainer after starting to supply gas in the supply step.

[0009] The present invention, in its fourth aspect, provides a method for manufacturing an article, which includes: forming a pattern on a substrate held by a holder, acquiring information about the adhesion between the substrate and the holder, supplying gas between the holder and the substrate on which the pattern is formed in the forming step based on the information about the adhesion acquired in the acquiring step, separating the substrate from the holder after starting to supply gas in the supplying step, processing the substrate separated in the separating step, and manufacturing the article using the substrate processed in the processing step.

[0010] Further features of the present invention will become apparent from the following description of exemplary embodiments (with reference to the attached drawings). BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 is a view showing the arrangement of a substrate stage;

[0012] Figure 2 is a diagram showing a functional arrangement of a controller;

[0013] Figure 3 is a plan view of the substrate suction cup;

[0014] Figure 4A and Figure 4B is a graph used to illustrate gas supply control;

[0015] Figure 5A and Figure 5B is a graph used to illustrate gas supply control;

[0016] Figure 6 is a view showing the arrangement of a substrate stage;

[0017] Figure 7 is a plan view of the substrate suction cup;

[0018] FIG. 8A to FIG. 8C is a view for explaining a substrate transfer operation;

[0019] Fig. 9 is a plan view of the substrate suction cup;

[0020] FIG. 10A to FIG. 10C is a view for explaining a substrate transfer operation;

[0021] Fig.11is a graph showing a driving curve of the micro-motion stage;

[0022] Fig.12 is a graph showing the time transition of the Z deviation of the fine motion stage;

[0023] Fig.13 is a graph showing time variation of pressure during gas supply;

[0024] Fig.14 is a schematic diagram showing the arrangement of an exposure device;

[0025] Fig.15 is a flow chart showing a method of separating a substrate from a substrate chuck; and

[0026] Fig.16 It is a flowchart of the method of manufacturing an item. DETAILED DESCRIPTION

[0027] Below, the embodiment will be described in detail with reference to the accompanying drawings. Note that the following embodiments are not intended to limit the scope of the invention claimed. A plurality of features are described in the embodiments, but are not limited to the invention requiring all of these features, and a plurality of these features may be appropriately combined. In addition, in the accompanying drawings, the same reference numerals are given to the same or similar configurations, and redundant descriptions thereof are omitted.

[0028] <First Embodiment>

[0029] The present disclosure relates to a substrate processing device for processing a substrate. The substrate processing device may be, for example, a photolithography device for forming a pattern on a substrate, such as an exposure device and an imprinting device. Alternatively, the substrate processing device may be an inspection device, such as an overlap inspection device, a CD inspection device, a defect inspection device, and an electrical characteristic inspection device. Alternatively, the substrate processing device may be a processing device such as an etching device and a deposition device. In the following description, it is assumed that the substrate processing device in the present disclosure is an exposure device as an example of a photolithography device.

[0030] Fig.14 is a schematic diagram of the exposure device 200 in the embodiment. In the specification and the drawings, directions will be expressed on the XYZ coordinate system, wherein the horizontal plane is defined as the XY plane. Typically, the substrate 2 is placed on the substrate suction cup 3 of the substrate stage 1 so that the surface of the substrate 2 is parallel to the horizontal plane (XY plane). Therefore, in the following description, the directions orthogonal to each other in the plane along the surface of the substrate 2 are the X-axis and the Y-axis, and the direction perpendicular to the X-axis and the Y-axis is the Z-axis. In addition, in the following description, the directions parallel to the X-axis, the Y-axis, and the Z-axis of the XYZ coordinate system are referred to as the X-direction, the Y-direction, and the Z-direction, respectively, and the rotation direction around the X-axis, the rotation direction around the Y-axis, and the rotation direction around the Z-axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively.

[0031] In the exposure device 200, exposure light guided from a light source (not shown) through an illumination optical system 202 is applied to an original plate 203. The original plate may also be referred to as a mask, a mask plate, etc. The exposure light passing through the original plate 203 passes through a projection optical system 206 and is applied to a substrate 2. As a material for the substrate, for example, glass, ceramics, metals, semiconductors, resins, etc. may be used. As required, a member made of a material different from that of the substrate may be provided on the surface of the substrate. The substrate is, for example, a silicon wafer, a semiconductor compound wafer, or quartz glass.

[0032] The original stage 204 includes an original suction cup (not shown) used as an original holder. The original stage 204 holds the original 203 by the original suction cup. The original stage 204 can move linearly in the X direction, the Y direction, and the Z direction, and rotate in the θX direction, the θY direction, and the θZ direction. These axes can be controlled independently.

[0033] A laser interferometer (not shown) is formed to accurately measure the position of the reticle stage 204. The position of the reticle stage 204 can be determined based on the amount of change in the measurement value obtained by the laser interferometer.

[0034] The original plate conveying system 214 may include an original plate hand 215, an original plate pre-alignment stage 216, an original plate conveying robot 217, and a storage unit 218. The original plate conveying robot 217 is a multi-jointed robot. The original plate conveying robot 217 includes a hand for holding the original plate 203, and the hand can be moved to an arbitrary position in the XYZ space. The storage unit 218 stores the original plate 203. The original plate 203 can be placed in the storage unit 218 from outside the device. The original plate 203 placed in the storage unit 218 is placed on the original plate pre-alignment stage 216 by the original plate conveying robot 217, which is a multi-jointed robot.

[0035] In the master pre-alignment stage 216, the position of the master 203 on the master pre-alignment stage 216 is measured by observing the marks on the master 203 with a microscope (not shown). After the measurement, the master hand 215 holds the master 203 on the master pre-alignment stage 216 and is driven in the +Y direction along a guide (not shown) to a position where it transfers the master 203 to the master stage 204. After the driving is completed, the master hand 215 is driven in the -Z direction to transfer the master 203 to the master stage 204. The master stage 204 holds the master 203 by vacuum adsorption. The displacement of the master 203 measured on the master pre-alignment stage 216 relative to the master pre-alignment stage 216 in the X direction, the Y direction, and the Z direction can be corrected by changing the position where the master stage 204 receives the master 203.

[0036] The substrate conveying system 210 may include a supply hand 211, a collection hand 212, a storage unit 213, a pre-alignment unit 219, a transfer robot 220, and a temporary placement base 221. The substrate 2 is stored in the storage unit 213. The transfer robot 220 is a multi-joint robot. The transfer robot 220 includes a hand for holding the substrate 2, and the hand can be moved to an arbitrary position in the XYZ space. The transfer robot 220 takes out the substrate 2 from the storage unit 213 and places the substrate 2 on the pre-alignment unit 219. In the pre-alignment unit 219, the outer shape position of the substrate 2 relative to the pre-alignment unit 219 is measured by applying a measuring light to the periphery of the substrate 2 and measuring the reflected light by a sensor.

[0037] The supply hand 211 is a conveying mechanism that conveys the substrate 2 from the pre-alignment unit 219 to the substrate stage 1, more specifically, to the pin member 9 formed on the coarse movement stage 13. The supply hand 211 can hold the substrate 2 by vacuum adsorption. The collection hand 212 is a conveying mechanism that collects the substrate 2 from the substrate stage 1 and conveys it to the temporary placement base 221. The collection hand 212 can hold the substrate 2 by vacuum adsorption.

[0038] The temporary placement base 221 is a base for temporarily placing the substrate 2 collected from the substrate stage 1 by the collecting hand 212. Since the transfer robot 220 cannot directly take the substrate from the collecting hand 212, it transfers the substrate 2 through the temporary placement base 221.

[0039] The substrate stage (substrate holding device) 1 may include a coarse movement stage 13 and a fine movement stage 8 placed on the coarse movement stage 13. The substrate chuck 3 is mounted on the fine movement stage 8. The substrate chuck 3 is a holder that holds the substrate 2. The substrate chuck 3 may be a vacuum chuck that attracts the lower surface of the substrate 2 to the holding surface by vacuum adsorption. Alternatively, the substrate chuck 3 may be an electrostatic chuck that attracts the lower surface of the substrate 2 to the holding surface by electrostatic interaction. Hereinafter, it will be described assuming that the substrate chuck 3 is a vacuum chuck. The fine movement stage 8 is configured to be able to move linearly in the X direction, the Y direction, and the Z direction, and to rotate in the θX direction, the θY direction, and the θZ direction. The substrate stage 1 includes a drive mechanism (not shown) that drives the fine movement stage 8 relative to these axes, and these axes can be controlled independently.

[0040] A laser interferometer (not shown) is formed to accurately measure the position of the fine-motion stage 8. The position of the fine-motion stage 8 can be determined based on the displacement of the measurement value obtained by the laser interferometer.

[0041] The pin member 9 is used when receiving the substrate 2 from the supply hand 211 and when transferring the substrate 2 to the collection hand 212. The pin member 9 can attract and hold the substrate 2. In order to stably support the substrate 2, for example, at least three pin members 9 can be arranged at or near the vertex of a triangle as large as possible in a plane parallel to the holding surface of the substrate suction cup 3. Each pin member 9 is arranged so that it extends through a hole formed in each of the fine movement stage 8 and the substrate suction cup 3, and the longitudinal axis of the pin member is parallel to the direction perpendicular to the holding surface of the substrate suction cup 3 (holder) for holding the substrate (ie, Z direction). The lower end of the pin member 9 is fixed to the coarse movement stage 13, and the upper end thereof is formed to be able to extend / retract from the holding surface of the substrate suction cup 3. The pin member 9 serves as a supporting member that supports the substrate 2 by extending from the holding surface. The operation of extending / retracting the pin member 9 from the holding surface of the substrate suction cup 3 can be performed by at least one of the expansion / contraction of the pin member 9, the vertical movement of the coarse movement stage 13, and the vertical movement of the fine movement stage 8.

[0042] The coarse movement stage 13 can be linearly moved in the X direction and the Y direction, and rotated in the θZ direction. The distance between the coarse movement stage 13 and the fine movement stage 8 can be measured using, for example, a capacitive sensor. Based on the measurement result, the position of the coarse movement stage 13 is controlled by using an actuator such as a linear motor so that it follows the position of the fine movement stage 8. Since the pin members 9 are fixed to the coarse movement stage 13, they move together with the coarse movement stage 13.

[0043] The off-axis scope 209 can measure the alignment marks on the substrate 2 .

[0044] The controller 100 controls the operation of the exposure device 200. The controller 100 may include functions of a driver and a controller that controls sensors, actuators, and the like in the exposure device 200.

[0045] The collection sequence of the substrate 2 in the present embodiment will be described below. The collection sequence of the substrate 2 may include an operation of transferring the substrate 2 from the substrate chuck 3 to the pin member 9 after the exposure is completed. This operation can be performed by relatively driving the substrate chuck 3 and the pin member 9 in the Z direction. Here, an adhesion force acts between the substrate 2 and the substrate chuck 3. In this specification, the adhesion force refers to the force required to separate the substrate 2 and the substrate chuck 3 by applying a force in a direction away from each other. That is, the adhesion force is related to the ease of separating the substrate 2 from the substrate chuck 3. Even if the substrate 2 is released from the substrate chuck 3, the adhesion force may remain depending on the characteristics of the holding surface of the substrate chuck 3, the characteristics of the substrate 2, the characteristics of the exposure process, the influence of foreign matter sandwiched between the substrate 2 and the substrate chuck 3, etc. In addition, even if the vacuum adsorption is released when the substrate is unloaded, the atmospheric pressure is not immediately reached, so the residual pressure (residual adsorption force) may become the adhesion force. In addition, in the case where the substrate chuck 3 is an electrostatic chuck, during the power-off state, the adhesion force may remain due to the electrostatic chuck and the charged substrate. If the adhesive force is strong, the substrate 2 is separated from the substrate chuck 3 against the adhesive force, which may damage one or both of the substrate 2 and the substrate chuck 3 .

[0046] In order to solve this problem, in the present embodiment, when releasing the substrate 2 held by the substrate chuck 3, gas is supplied between the substrate 2 and the substrate chuck 3 to facilitate their separation. However, if the amount of gas supplied when separating the substrate 2 from the substrate chuck 3 is too large relative to the adhesion force, the substrate 2 floats from the substrate chuck 3 and the substrate 2 slides laterally. On the other hand, if the amount of gas supplied when separating the substrate 2 from the substrate chuck 3 is too small relative to the adhesion force, the substrate 2 will not be separated from the substrate chuck 3, resulting in wear of the substrate chuck 3. Since the adhesion force is caused by the characteristics of the substrate 2, the characteristics of the substrate chuck 3, the characteristics of the exposure process, etc., it is necessary to appropriately set the gas supply for separating the substrate 2 from the substrate chuck 3 according to the adhesion force each time.

[0047] The holding and releasing of the substrate 2 by the substrate chuck 3 and the control of the gas supply between the substrate 2 and the substrate chuck 3 will be described below.

[0048] Figure 1 is a schematic diagram showing the arrangement of the substrate stage 1. The substrate chuck 3 is configured to hold the substrate 2 by decompressing the space between the substrate 2 and the substrate chuck 3 and sucking the substrate 2 to the holding surface by vacuum adsorption. The substrate chuck 3 is held on the fine movement stage 8 by vacuum adsorption. The fine movement stage 8 is mounted on the coarse movement stage 13.

[0049] A gas flow path 10 is arranged in the coarse movement stage 13. The gas flow path 10 is arranged so that gas is sucked from between the substrate 2 and the substrate chuck 3 through an opening formed in the surface of the substrate chuck 3 facing the substrate 2 by a vacuum pump 5 (vacuum source), which is a negative pressure generating device. In addition, the gas flow path 10 is arranged so that gas from a positive pressure tank 6, which is a positive pressure generating device (gas supply source), is supplied between the substrate 2 and the substrate chuck 3 through the opening. A pressure sensor 20, regulators 41, 61, 62 and 63, and solenoid valves 31, 51, 52 and 53 are provided on the gas flow path 10. Note that the gas flow path 10 is, for example, a pipe through which gas flows (a pipe that allows gas to flow through). The gas flow path 10, the regulator, the solenoid valve, etc., which are members or mechanisms for supplying gas to the space between the substrate 2 and the substrate chuck 3, may be collectively referred to as a gas supplier. Alternatively, the gas flow path 10 may be referred to as a gas supplier.

[0050] A plurality of openings 7 are formed in the surface of the substrate chuck 3 facing the substrate 2 (see Figure 3 ). The gas flow path 10 branches and leads to each opening. In addition, the gas flow path 10 is connected to the vacuum pump 5 via the electromagnetic valve 31 and the regulator 41, and is connected to the positive pressure tank 6 via the electromagnetic valves 51, 52, 53 and the regulators 61, 62, 63. Generally, the vacuum pump 5 and the positive pressure tank 6 are constructed as factory equipment, so they are installed outside the substrate stage 1.

[0051] The pressure in the gas flow path 10 is measured by the pressure sensor 20. In the example, the pressure sensor 20 is arranged to measure the pressure in the gas flow path 10 at a position located on the vacuum pump side of the branch of the gas flow path 10 and on the substrate chuck 3 side of the solenoid valves 31, 51, 52, and 53. This is to enable the pressure sensor 20 to accurately measure the pressure in the space between the substrate 2 and the substrate chuck 3.

[0052] The regulator 41 and the electromagnetic valve 31 are arranged between the vacuum pump 5 and the substrate chuck 3. The regulator 41 is configured to be able to adjust the pressure in the gas flow path 10 to a desired vacuum pressure. The electromagnetic valve 31 is arranged on the substrate chuck 3 side of the regulator 41. This is to supply the pressure adjusted by the regulator 41 to the substrate chuck 3. When the electromagnetic valve 31 is opened, the vacuum pump 5 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the electromagnetic valve 31 is closed, the pressure in the space between the substrate 2 and the substrate chuck 3 is not adjusted.

[0053] Regulators 61, 62 and 63 and solenoid valves 51, 52 and 53 are arranged between the positive pressure tank 6 and the substrate suction cup 3. The regulators 61, 62 and 63 are configured to be able to adjust the pressure in the gas flow path 10 supplied from the positive pressure tank 6. If the supplied pressure can be adjusted, the supply flow rate can also be adjusted. The solenoid valves 51, 52 and 53 are arranged on the gas flow path 10 on the substrate suction cup 3 side of the regulators 61, 62 and 63. When the solenoid valves 51, 52 and 53 are opened, the positive pressure tank 6 adjusts the pressure in the space between the substrate 2 and the substrate suction cup 3. When the solenoid valves 51, 52 and 53 are closed, the pressure in the space between the substrate 2 and the substrate suction cup 3 is not adjusted. Note that, Figure 1 Three sets of regulators and electromagnetic valves between the positive pressure tank 6 and the substrate chuck 3 are shown, but the number of sets is not limited to a specific number. The number of sets may be one, four, or more. Instead of a combination of an electromagnetic valve and a regulator, a servo valve whose opening / closing degree can be freely set may be formed.

[0054] When the substrate 2 is held by the substrate chuck 3 by vacuum adsorption, the solenoid valve 31 is opened, and the solenoid valves 51, 52, and 53 are closed. In this way, the vacuum pump 5 can reduce the pressure in the space between the substrate 2 and the substrate chuck 3. When the substrate 2 is released from the substrate chuck 3, the solenoid valve 31 is closed, and at least one of the solenoid valves 51, 52, and 53 is opened. In this way, the space between the substrate 2 and the substrate chuck 3 can be pressurized with the gas from the positive pressure tank 6.

[0055] By changing the settings of the regulators 61, 62, and 63, respectively, the flow rate and pressure of the gas filling the space between the substrate 2 and the substrate chuck 3 can be changed when any one of the electromagnetic valves 51, 52, and 53 is opened. In the example, the regulators 61, 62, and 63 are set so that the gas supply flow rates of the regulators 61, 62, and 63 increase in this order. When releasing the holding of the substrate 2 by the substrate chuck 3, the controller 100 controls the gas supply via the gas flow path 10 and the opening 7 based on the information about the adhesion of the substrate 2 to the holding surface (information about the ease of separation) obtained in advance. For example, the controller 100 decides which of the electromagnetic valves 51, 52, and 53 to open and the gas supply time based on the information about the adhesion of the substrate 2 to the holding surface (information about the ease of separation).

[0056] The controller 100 may be formed of, for example, a general-purpose or dedicated processor having a program installed in a memory. Alternatively, the controller 100 may be formed of a programmable logic device (PLD) (e.g., a field programmable gate array (FPGA)) or an application-specific integrated circuit (ASIC). Alternatively, the controller 100 may be formed of a combination of all or some of a processor, a PLD, and an ASIC. Note that the controller 100 may be formed in the exposure device 200, or may be formed outside the exposure device 200. When the controller 100 is formed outside the exposure device 200, for example, the functions of the controller 100 are installed in a server device or the like connected to the exposure device 200 so as to be able to communicate therewith.

[0057] Figure 2 1 shows a functional arrangement of the controller 100. The controller 100 may include an instruction unit 110, a storage unit 120, and a processing unit 130. The instruction unit 110 instructs the control amount to each driving unit including the fine-motion stage 8. The storage unit 120 stores various data and programs related to exposure control. The processing unit 130 performs various processes related to exposure control. For example, the processing unit 130 calculates the drive target positions of the substrate stage 1 and the original plate stage 204. In addition, the processing unit 130 performs an exposure sequence and a substrate supply and collection sequence according to the control program stored in the storage unit 120.

[0058] The function of the processing unit 130 will be described later. Note that Figure 2 An example is shown in which the controller 100 includes the storage unit 120 and the processing unit 130 , but the storage unit 120 and the processing unit 130 may be provided separately from the controller 100 .

[0059] Figure 3 3 is a plan view of the substrate chuck 3 when viewed from the +Z direction. The substrate chuck 3 is provided with an annular sealing portion 60 at a position along the outer periphery of the substrate chuck 3. However, the presence, number and arrangement of the sealing portion 60 are not limited to Figure 3 For example, the substrate suction cup 3 may not be provided with a sealing portion. Alternatively, a plurality of sealing portions may be provided.

[0060] The surface of the substrate chuck 3 is provided with a plurality of protrusions (not shown), and the upper surfaces of the plurality of protrusions can be used as a holding surface for holding the substrate 2. The plurality of protrusions are called chuck pins. The substrate chuck 3 is provided with an opening 7 connected to a gas flow path 10. Figure 3 Twelve openings 7 are shown, but the arrangement and number of the openings 7 are not limited to Figure 3 The example shown in .

[0061] The operation of holding the substrate 2 by the substrate chuck 3 by vacuum adsorption is performed by exhausting the gas in the space between the substrate 2 and the substrate chuck 3 through the opening 7. The sealing portion 60 provided between the substrate 2 and the substrate chuck 3 can prevent the atmosphere from flowing in from the surroundings, thereby enabling vacuum adsorption.

[0062] The operation of releasing the substrate 2 from the substrate chuck 3 (the operation of separating the substrate 2 from the substrate chuck 3) is performed by supplying gas between the substrate 2 and the substrate chuck 3 through the opening 7. Here, if the supply amount (pressure and flow rate) of the gas or the supply time of the gas is too large relative to the adhesion force, the substrate 2 floats from the substrate chuck 3, and the substrate 2 slides laterally. On the other hand, if the supply amount of the gas when separating the substrate 2 from the substrate chuck 3 or the supply time of the gas is too small relative to the adhesion force, when the substrate 2 is removed, the substrate 2 is not separated from the substrate chuck 3, and the substrate chuck is worn. The adhesion force and the method of optimizing the supply amount of the gas relative to the adhesion force will be described in detail later.

[0063] refer to FIG. 8A to FIG. 8C , a method of transferring the substrate 2 from the substrate chuck 3 to the pin member 9 will be described. FIG. 8A to FIG. 8C Each of the figures shows a schematic cross-sectional view of the substrate stage 1. The fine movement stage 8 moves in the Z direction along the longitudinal direction of the pin member 9. Note that the fine movement stage 8 can move in the Z direction while tilting corresponding to the Z position relationship between the three pin members 9. The pin members 9 are arranged in a coarse movement stage 13 that can be driven in the X direction and the Y direction. The Z direction position of the pin member 9 can be measured using, for example, an interferometer, a capacitive sensor, etc. (not shown).

[0064] The pin member 9 is connected to the vacuum pump 5 via a gas flow path 70. A regulator 73 and a solenoid valve 72 are provided between the vacuum pump 5 and the pin member 9. The regulator 73 is configured to be able to adjust to a desired vacuum pressure. The solenoid valve 72 is arranged on the pin member 9 side of the regulator 73. This is to supply the pressure regulated by the regulator 73 to the substrate suction cup 3. When the solenoid valve 72 is opened, the vacuum pump 5 regulates the pressure in the space between the substrate 2 and the substrate suction cup 3. When the solenoid valve 72 is closed, the pressure in the space between the substrate 2 and the substrate suction cup 3 is not regulated. The pressure sensor 71 is arranged to monitor the pressure between the pin member 9 and the substrate 2. The pressure sensor 71 needs to be arranged on the pin member 9 side of the solenoid valve 72. In FIG. 8A to FIG. 8C In the embodiment of the present invention, the pressure sensor 71, the electromagnetic valve 72 and the regulator 73 are arranged outside the coarse movement stage 13, but they may be arranged in the coarse movement stage.

[0065] exist Fig. 8A In the embodiment, the fine motion stage 8 is located on the +Z direction side, and the substrate chuck 3 attracts the substrate 2 by vacuum adsorption. Figure 8BIn the process, since the fine movement stage 8 moves in the -Z direction, the pin member 9 contacts the substrate 2, and the fine movement stage 8 stops moving. Thereafter, the controller 100 releases the attraction-holding of the substrate 2 by the substrate chuck 3. At this time, the controller 100 controls the gas supply through the gas flow path 10 and the opening 7 based on the information about the adhesion of the substrate 2 to the holding surface.

[0066] Thereafter, when the electromagnetic valve 72 is opened, the pin member 9 attracts and holds the substrate 2. Then, as shown in FIG. Figure 8C As shown in FIG. 1 , the fine movement stage 8 is further moved in the −Z direction while the pin member 9 attracts and holds the substrate 2 . In this way, the substrate 2 is transferred from the substrate chuck 3 to the pin member 9 .

[0067] exist FIG. 8A to FIG. 8C In the example shown, the substrate 2 is transferred from the substrate chuck 3 to the pin member 9 by moving the fine motion stage 8. However, it is sufficient as long as the relative position of the substrate chuck 3 and the pin member 9 can be changed. For example, the entire pin member 9 or its distal end portion can be moved in the +Z direction. Changing the relative position of the substrate chuck 3 and the pin member 9 is synonymous with relatively moving the substrate chuck 3 and the pin member 9.

[0068] Fig. 9 : is a plan view of the substrate suction cup 3 when viewed from the +Z direction. The surface of the substrate suction cup 3 is provided with a plurality of protrusions (suction cup pins) (not shown), and the upper surfaces of the plurality of protrusions can be used as a holding surface for holding the substrate 2. An annular sealing portion 60 is provided in the outer periphery of the substrate suction cup 3 to prevent air from leaking from the substrate suction cup 3 when the substrate 2 is sucked by vacuum suction. The substrate suction cup 3 includes an opening 7 connected to the gas flow path 10. The substrate suction cup 3 holds the substrate 2 by vacuum suction through the opening 7. The space between the substrate 2 and the suction cup pins is set in a vacuum state, which makes it possible to suck and hold the substrate 2 with a uniform force.

[0069] The substrate chuck 3 and the fine movement stage 8 are formed with holes 14 for passing the pin member 9 in the Z direction, so that the fine movement stage 8 can be driven in the Z direction without interfering with the pin member 9 . Fig. 9 A hole 14 for passing the pin member 9 is shown. Fig. 9 An arrangement in which three pin members 9 are provided is shown, but the number of pin members 9 is not limited as long as the substrate 2 can be stably held according to the size, material, and quality of the substrate 2 .

[0070] FIG. 8A to FIG. 8CAn example is shown in which the fine movement stage 8 moves so that the pin member 9 attracts and holds the substrate 2. However, it is sufficient as long as the relative position of the substrate suction cup 3 and the pin member 9 can be changed. For example, the entire pin member 9 or its distal end portion can be moved in the +Z direction. Changing the relative position of the substrate suction cup 3 and the pin member 9 is synonymous with relatively moving the substrate suction cup 3 and the pin member 9. Alternatively, a configuration may be adopted in which the fine movement stage 8 is not moved, but the pin member 9 is extended to attract and hold the substrate 2 by the pin member 9. In this way, the substrate stage 1 may include a driving unit that drives the fine movement stage 8 and / or drives the pin member 9 or deforms the pin member to perform an operation of separating the substrate 2 and the substrate suction cup 3.

[0071] FIG. 10A to FIG. 10C An example is shown in which the pin member 9 is extended without moving the fine motion stage 8 to attract and hold the substrate 2 by the pin member 9. Hereinafter, the positional movement of the distal end of the pin member 9 due to the expansion / contraction of the pin member 9 is sometimes referred to as "movement of the pin member 9".

[0072] exist Fig. 10A In this state, the distal end portion of the pin member 9 on the +Z direction side is located on the -Z direction side of the holding surface of the substrate suction cup 3 and does not contact the substrate 2. In this state, the substrate suction cup 3 holds the substrate 2. Fig. 10B , as the pin member 9 extends in the +Z direction, the pin member 9 contacts the substrate 2. The pin member 9 stops extending at the position in contact with the substrate 2. Thereafter, the controller 100 releases the attraction-holding of the substrate 2 by the substrate chuck 3. At this time, the controller 100 controls the gas supply via the gas flow path 10 and the opening 7 based on the information about the adhesion of the substrate 2 to the holding surface (information about the ease of separation).

[0073] Thereafter, when the electromagnetic valve 72 is opened, the pin member 9 attracts and holds the substrate 2. Then, as shown in FIG. Fig. 10C As shown in FIG. 1 , in a state where the pin member 9 attracts and holds the substrate 2 , the pin member 9 further extends in the +Z direction. In this way, the substrate 2 is transferred from the substrate suction cup 3 to the pin member 9 .

[0074] exist FIG. 10A to FIG. 10C In the illustrated example, the substrate 2 is transferred from the substrate chuck 3 to the pin member 9 by extending the pin member 9. However, the substrate 2 may be transferred from the substrate chuck 3 to the pin member 9 by moving the entire pin member 9. Note that a driving unit that drives the pin member 9 may be included in the pin member 9 or may be connected to the pin member 9.

[0075] Fig.11 is a graph showing a driving curve of the fine movement stage 8 . Fig.11The relationship between time and the Z-direction position of the fine movement stage 8 in the operation of transferring the substrate 2 from the substrate chuck 3 to the pin member 9 is shown. Note that the amount of change in the Z-direction position of the fine movement stage 8 is synonymous with the amount of change in the Z-direction position of the substrate chuck 3.

[0076] In the first section, the instruction unit 110 instructs the fine-movement stage 8 to set the first position stored in the storage unit 120 as the target position so that the fine-movement stage 8 moves at high speed in the -Z direction. When the fine-movement stage 8 is driven in the -Z direction, the first position is set to the same position as the Z direction position of the fine-movement stage 8 when the pin member 9 is in contact with the substrate 2, or a position on the +Z direction side of the position. Here, the fine-movement stage 8 is shown as FIG. 8A to FIG. 8C However, due to the FIG. 10A to FIG. 10C The case where the pin member 9 moves in the +Z direction is different from the example only in the direction of movement, so by Fig.11 Swap the -Z direction and +Z direction, Fig.11 By exchanging the -Z direction and the +Z direction, the following drawings and descriptions can also be applied to the case where the pin member 9 moves in the +Z direction. In addition, in the form where both the micro-motion stage 8 and the pin member 9 are driven, Fig.11 In the description of the drawings described below, the description of moving the fine movement stage 8 in the Z direction may be replaced with the description of relatively moving the fine movement stage 8 and the pin member 9 .

[0077] In the second section, the controller 100 moves the fine movement stage 8 at a low speed in the -Z direction, and monitors the driving current value while driving the fine movement stage 8. By monitoring the driving current value while moving the fine movement stage 8 in the -Z direction, the controller 100 can detect the driving current value that changes when the pin member 9 contacts the substrate 2, thereby detecting that the pin member 9 has contacted the substrate 2. The reason for driving the fine movement stage 8 at a low speed in the second section is that if the substrate 2 contacts the pin member 9 at a high speed, the substrate 2 and the pin member 9 may be damaged. If it is detected by monitoring the driving current value that the pin member 9 has contacted the substrate 2, the controller 100 stops moving the fine movement stage 8 in the -Z direction and ends the second section. Note that the controller 100 can update the value of the first position stored in the storage unit 120 with the value of the Z-direction position of the fine movement stage 8 when the contact between the pin member 9 and the substrate 2 is detected in the second section. By updating the first position in this way, the time required for the second section can be reduced.

[0078] If the coordinates of the fine-movement stage 8 when the substrate 2 is in contact with the pin member 9 are the same as the coordinates of the first position, the substrate 2 and the pin member 9 are in contact with each other when the fine-movement stage 8 has moved to the first position. In this case, at the same time as the second interval starts, it is detected based on the drive current value that the substrate 2 and the pin member 9 have been in contact. Therefore, the fine-movement stage 8 is not moved at a low speed in the second interval, and the operation transitions to the third interval. Note that if it is known that the coordinates of the fine-movement stage 8 when the substrate 2 and the pin member 9 are in contact are the same as the coordinates of the first position, the second interval can be omitted, and the operation can transition to the third interval after the first interval.

[0079] In the third interval, the controller 100 stops sucking the gas between the substrate 2 and the substrate suction cup 3, and in parallel, supplies gas between the substrate 2 and the substrate suction cup 3. At this time, gas is supplied according to the adhesion force to prevent the substrate 2 from floating from the substrate suction cup 3 and sliding laterally. This can also suppress the following situation: in the fourth interval described below, when the adhesion force remains, the substrate 2 is forcibly separated from the substrate suction cup 3, thereby causing the substrate suction cup 3 to wear due to the sliding between the substrate 2 and the substrate suction cup 3. In the third interval, the pin member 9 also starts to suck the gas between the substrate 2 and the pin member 9. In the third interval, the controller 100 can estimate the adhesion force based on the characteristics of the substrate 2, the characteristics of the substrate suction cup 3, the characteristics of the exposure process, etc., so as to optimize the gas supply parameters and supply the gas. The estimation of the adhesion force and the supply of the gas will be described later.

[0080] In the fourth section, the controller 100 moves the fine motion stage 8 at a low speed in the -Z direction, thereby separating the substrate 2 and the substrate chuck 3 by a small distance. If the fine motion stage 8 is moved at a high speed in the -Z direction to forcibly separate the substrate 2 from the substrate chuck 3 when there is an adhesion force, the substrate 2 will slide laterally on the substrate chuck 3 and cause wear of the substrate chuck 3. The wear of the substrate chuck 3 affects the subsequent attraction-holding of the substrate 2. Therefore, in order to reduce the wear of the substrate chuck 3, in the third section, gas is supplied between the substrate 2 and the substrate chuck 3 according to the adhesion force.

[0081] In the fifth section, the fine movement stage 8 is moved at high speed in the −Z direction to the final position in the Z direction.

[0082] If the adhesion between the substrate 2 and the substrate chuck 3 can be reduced by supplying gas in the third interval, the moving speed of the fine-motion stage 8 in the fourth interval can be increased. For example, the fifth interval described below can be omitted, and the fine-motion stage 8 can be driven at high speed along the -Z direction to the final position in the Z direction.

[0083] A method of estimating adhesion will be described. Adhesion is the resultant force of the suction pressure acting between the substrate 2 and the substrate chuck 3 and the adhesion force between the substrate 2 and each chuck pin of the substrate chuck 3. Adhesion may be estimated based on the characteristics of the substrate 2, the characteristics of the substrate chuck 3, the characteristics of the exposure process, and the like. In an example, adhesion may be estimated based on at least one of the characteristics of the substrate 2 and the characteristics of the substrate chuck 3.

[0084] The characteristics of the substrate 2 include, for example, at least one of the amount of warpage of the substrate 2, the roughness of the surface (back side) of the substrate 2 in contact with the holding surface of the substrate chuck 3, the type of film formed on the substrate 2, the material of the substrate 2, and the thickness of the substrate 2. For example, if the substrate 2 is warped, the adhesion between the substrate 2 and the substrate chuck 3 is reduced. This is because the warpage of the substrate 2 generates stress in the direction of separating the substrate 2 from the substrate chuck 3, which reduces the degree of adhesion. On the other hand, if the substrate 2 is not warped, the degree of adhesion is high and the adhesion is strong. The roughness of the back side of the substrate 2 also affects the adhesion. For example, if the back side of the substrate 2 is not rough, the substrate 2 and the substrate chuck 3 are firmly attached to each other. This is a state of strong adhesion. On the other hand, if the back side of the substrate 2 is rough, the substrate 2 and the substrate chuck 3 are not in close contact with each other, resulting in weak adhesion. If a film is formed on the back side of the substrate, the type of the formed film may affect the adhesion. In addition, the material and thickness of the substrate 2 also affect the weight of the substrate 2. The heavier the substrate, the more firmly the substrate 2 and the substrate chuck 3 are attached to each other. This is a state of strong adhesion.

[0085] The characteristics of the substrate chuck 3 include at least one of uniformity of the height of the chuck pin (flatness of the holding surface), surface coating of the chuck pin (surface roughness of the holding surface), thickness and material of the chuck pin, etc. The more uniform the height of the chuck pin (the higher the flatness of the holding surface), the more firmly the substrate 2 and the substrate chuck 3 adhere to each other, thereby generating a stronger adhesion force. The thicker the chuck pin, the larger the contact area between the holding surface of the substrate chuck 3 and the substrate 2, thereby generating a stronger adhesion force. If the chuck pin is made of, for example, a material having fine particles, the substrate 2 and the substrate chuck 3 adhere to each other firmly, thereby generating a stronger adhesion force.

[0086] The characteristics of the exposure process may include exposure time, exposure amount, whether or not to perform θ correction drive, etc. For example, if the exposure time is long, the duration of vacuum adsorption between the substrate 2 and the substrate chuck 3 becomes longer, and the adhesion between the substrate 2 and the substrate chuck 3 becomes firm. If the exposure amount is large, the substrate 2 thermally expands. During exposure, since the substrate 2 is vacuum adsorbed on the substrate chuck 3, the back side of the substrate 2 is subjected to internal stress but does not expand. However, once the vacuum adsorption is released, the internal stress is released and the substrate 2 expands. When the substrate 2 slides slightly laterally on the substrate chuck 3, the adhesion between the substrate 2 and the substrate chuck 3 decreases. In addition, in the exposure sequence, when observing the alignment mark using an off-axis scope, the substrate 2 may be offset in the θZ direction on the substrate chuck 3. In order to rotate the substrate 2 in the θZ direction on the substrate stage 1, an operation called θ correction drive as described below may be performed. An example of rotating the substrate 2 by 200 μrad will be described. The controller 100 rotates the micro-motion stage 8 by 200 μrad from a position of 0 μrad. Then, the controller 100 transfers the substrate 2 from the substrate suction cup 3 to the pin member 9. In this state, the controller 100 rotates the fine motion stage 8 by -200 μrad to return it to the position of 0 μrad. The substrate 2 on the pin member 9 is not affected by this rotation. In this state, the controller 100 transfers the substrate 2 to the substrate suction cup 3 again. Therefore, the substrate 2 rotates by 200 μrad relative to the substrate suction cup 3. Using this method, the offset in the θZ direction can be corrected. Since the substrate 2 is released once from the holding of the substrate suction cup 3 and then vacuum-adsorbed again, this means that the exposure time changes. In this way, the adhesion also changes according to the exposure process.

[0087] As has been described above, if the characteristics of the substrate 2, the characteristics of the substrate chuck 3, and the characteristics of the exposure process are known, it is possible to estimate the adhesion force as the force acting between the substrate 2 and the substrate chuck 3. The adhesion force can be estimated by calculation using a simulator (not shown) that models the substrate 2 and the substrate chuck 3.

[0088] Next, a simulation of the transition of the adhesion force when the gas supply amount and the gas supply time are changed will be described. The larger the gas supply amount, the weaker the adhesion force between the substrate 2 and the substrate chuck 3 becomes. Even if the gas supply amount is the same, the adhesion force between the substrate 2 and the substrate chuck 3 becomes weaker as the gas supply time increases. The gas supply amount parameter and the gas supply time parameter are determined in advance so that the adhesion force approaches zero after the gas supply. This is the optimal gas supply parameter. In this way, information about the adhesion force of the substrate 2 to the holding surface of the substrate chuck 3 (information about the ease of separation) can be obtained in advance.

[0089] refer to Figure 4A , gas supply control will be described. Figure 4AAn example of the time transition of the gas supply flow rate when the substrate 2 is released from the substrate chuck 3 is shown. Figure 4A It is shown that the gas supply flow rate is constant when each solenoid valve is opened. Here, the regulators 61, 62 and 63 are set so that their gas supply flow rates increase in this order. Therefore, the supply flow rate of the gas supplied between the substrate 2 and the substrate chuck 3 increases in the order in which the solenoid valves 51, 52 and 53 are opened.

[0090] Figure 4A 1 is a view assuming that the adhesion between the substrate 2 and the substrate chuck 3 is large. The gas supply amount and the gas supply time are determined based on the results of a simulation performed in advance using the characteristics of the substrate 2 and the characteristics of the substrate chuck 3. The determined gas supply amount and gas supply time are stored in the storage unit 120. Figure 4A In the embodiment, the controller 100 (instruction unit 110 ) opens the solenoid valve 51 according to the gas supply amount stored in the storage unit 120 . The length of time for opening the solenoid valve 51 also complies with the gas supply time stored in the storage unit 120 .

[0091] Figure 4B As an example, it is shown Figure 4A FIG. 2 shows a change in the adhesion force between the substrate 2 and the substrate chuck 3 during gas supply under the gas supply control. During the gas supply, the adhesion force gradually decreases. If the adhesion force is reduced to Figure 4B If the substrate 2 is at the optimum point shown in FIG, the substrate 2 will not slide laterally on the substrate chuck 3, and the substrate chuck 3 will not wear. The point where the adhesion force is zero is not set as the optimum point because a small amount of adhesion force is left to prevent the substrate 2 from sliding laterally.

[0092] By changing the electromagnetic valve to be opened, the amount of gas supplied between the substrate 2 and the substrate chuck 3 can be controlled. In addition, after a predetermined time has passed from the start of gas supply, the electromagnetic valve can be controlled to be closed to stop the gas supply. This can produce a state in which the substrate 2 does not slide laterally on the substrate chuck 3 and the substrate chuck 3 is not worn.

[0093] By setting the optimal gas supply parameters, it is intended that the adhesion force acting between the substrate 2 and the substrate chuck 3 after the gas supply is close to zero. If the adhesion force becomes negative, the gas supply is too much and the substrate 2 slides laterally on the substrate chuck 3. On the contrary, if the adhesion force is too large, wear occurs when the substrate 2 is separated from the substrate chuck 3.

[0094] The gas supply control described above is effective when a specific type of substrate is placed in the exposure device. In reality, substrates with different characteristics are placed. In a mass production factory of semiconductor devices, a specific number of substrates (for example, 25 substrates) that have been through the same manufacturing process are usually managed as one lot. Therefore, exposure processing jobs are input by lot. It is assumed that the characteristics of the substrate vary for each lot.

[0095] In the example, the optimal gas supply parameter is calculated in advance by performing a simulation while changing the characteristics of the substrate. The characteristics of the substrate and the optimal gas supply parameter are associated with each other and stored in the storage unit 120. For example, the optimal gas supply parameter when the warpage amount (which is one of the characteristics of the substrate) is 50 μm is obtained, and the warpage amount of 50 μm and the gas supply parameter corresponding to the amount are associated with each other and stored in the storage unit 120. Similarly, the optimal gas supply parameter when the warpage amount is 100 μm is obtained, and the warpage amount of 100 μm and the gas supply parameter corresponding to the amount are associated with each other and stored in the storage unit 120. When the substrate 2 having a warpage amount of 50 μm is placed on the substrate stage 1, an input indicating that the warpage amount of the substrate 2 is 50 μm is provided to the controller 100. The processing unit 130 extracts the gas supply parameter corresponding to the warpage amount of 50 μm from the storage unit 120. Based on the extracted parameter, the processing unit 130 transmits the operation amount of the selected solenoid valve to the indication unit 110. The indicating unit 110 indicates the operation amount for the selected solenoid valve.

[0096] The characteristics of the substrate may be input to the controller 100 by a user via a user interface. Alternatively, the characteristics of the substrate may be input to the controller 100 via an external device. The external device may be, for example, a measuring instrument that measures the amount of warpage of the substrate. Alternatively, the characteristics of the substrate may be measured by the pre-alignment unit 219, and the measurement result may be input to the controller 100. Alternatively, information on the film type as a characteristic of the substrate may be input to the controller 100 from the deposition device.

[0097] The characteristics of the substrate chuck 3 may vary. For example, it is assumed that the weight of the substrate is heavy and the chuck pin of the substrate chuck 3 is thick. In this case, simulation is performed while changing the characteristics of the substrate and the characteristics of the substrate chuck, thereby calculating the optimal gas supply parameters for each characteristic.

[0098] The characteristics of the substrate and the characteristics of the substrate chuck are input to the controller 100. The processing unit 130 extracts parameters corresponding to the input from the storage unit 120. Based on the extracted parameters, the processing unit 130 transmits the operation amount of the selected solenoid valve to the indication unit 110. The indication unit 110 indicates the operation amount for the selected solenoid valve.

[0099] The characteristics of the substrate chuck can be input to the controller 100 by the user via the user interface. Alternatively, the type of the substrate chuck 3 can be converted into the characteristics of the substrate chuck 3 and input to the controller 100. For example, the type of the chuck is printed on the substrate chuck 3. The printing may be text such as Japanese, English, or numbers, or may be a barcode or a two-dimensional barcode. When a reader that reads the printing is arranged in the device, the type of the substrate chuck 3 can be determined based on the result read by the reader, converted (specified) into information such as the thickness and material of the pin (which is the characteristic of the substrate chuck 3), and input to the controller 100.

[0100] The example of obtaining gas supply parameters in advance through simulation and performing gas supply based on the optimal parameters has been described above. By obtaining the parameters in advance, the amount of calculation in the processing unit 130 can be reduced. In addition, the time required to release the substrate chuck 3 from the substrate 2 can be shortened.

[0101] If the calculation time allows, the characteristics of the substrate 2 and the characteristics of the substrate chuck 3 may also be input to the controller 100, and a simulator may be executed in the processing unit 130. The processing unit 130 as a simulator calculates the adhesion force based on the characteristics of the substrate 2 and the characteristics of the substrate chuck 3, and determines the optimal parameters for the substrate according to the calculated adhesion force. Thereafter, the processing unit 130 may instruct the instruction unit 110 to operate the solenoid valve.

[0102] In the method of actually measuring adhesion, a plurality of substrates having different characteristics and a plurality of substrate chucks having different characteristics are prepared, and adhesion is measured by supplying gas while changing the combination. In this way, the relationship between the characteristics of the substrate, the characteristics of the substrate chuck, and adhesion can be obtained. Based on the relationship, the controller 100 can provide a gas supply parameter corresponding to the adhesion.

[0103] In the third interval of gas supply ( Fig.11 ), the lateral sliding of the substrate can be detected using the pressure sensor 71 that measures the pressure between the substrate 2 and the pin member 9. In the third interval, the solenoid valve 72 is opened, and the substrate 2 is vacuum-held by the pin member 9. Here, if an excessive amount of gas is supplied between the substrate 2 and the substrate chuck 3, the substrate 2 and the pin member 9 are separated, and the substrate 2 slides laterally. The atmosphere flows into the pin member 9, and the pressure in the gas flow path 70 increases. By detecting the increase in pressure in the gas flow path 70 using the pressure sensor 71, the lateral sliding of the substrate can be detected.

[0104] Fig.151 is a flowchart showing a method of separating the substrate 2 from the substrate chuck 3. First, an acquisition step of acquiring information about the adhesion between the substrate 2 and the substrate chuck 3 is performed (step S110). Next, a supply step of supplying gas between the substrate 2 and the substrate chuck 3 based on the information about the adhesion acquired in the acquisition step is performed (step S120). After the supply of gas starts in the supply step, a separation step of separating the substrate 2 from the substrate chuck 3 is performed (step S130).

[0105] The substrate stage (substrate holding device) 1 according to the present embodiment includes a substrate chuck (holder) 3 for holding a substrate 2 and a gas supplier that supplies a gas between the substrate 2 and the substrate chuck 3. When separating the substrate 2 from the substrate chuck 3 holding the substrate 2, the gas supplier supplies a gas based on information on the adhesion between the substrate 2 and the substrate chuck 3. Therefore, wear of each of the substrate 2 and the substrate chuck 3 can be suppressed.

[0106] <Second Embodiment>

[0107] In the first embodiment, it has been described that the adhesion force is estimated from the characteristics of the substrate, the characteristics of the substrate chuck, etc. In the second embodiment, a method of obtaining the adhesion force from the measurement value of the pressure sensor 20 will be described.

[0108] The controller 100 releases the vacuum suction of the substrate 2 by the substrate chuck 3 and monitors the measured value of the pressure sensor 20 during the gas supply. Fig.13 The time variation of the measured value (pressure) of the pressure sensor 20 during the gas supply is shown. Fig.13 The pressure change from the start of gas supply after the vacuum adsorption is released is shown. The horizontal axis represents time and the vertical axis represents pressure. Due to the supply of gas, the pressure in the space between the substrate 2 and the substrate suction cup 3 increases with the passage of time. When the measurement value of the pressure sensor 20 indicates 0, the pressure in the space between the substrate 2 and the substrate suction cup 3 is zero. From this point in time, a force is generated to resist the adhesion between the substrate 2 and the suction cup pins of the substrate suction cup 3. At a certain point in time, the atmosphere enters through the sealing portion 60 and the substrate 2, and the pressure between the substrate 2 and the substrate suction cup 3 drops. At this time, it is assumed that the substrate 2 and the suction cup pins of the substrate suction cup 3 are separated, so the pressure before the pressure drops is regarded as the adhesion. In the case where no pressure drop occurs, it is preferred to increase the supply of gas.

[0109] Based on the adhesion force, the optimal gas supply parameters can be obtained by the simulation described in the first embodiment. Since the adhesion force can be obtained using the pressure sensor 20 as described above, the gas supply parameters can be optimized in the exposure device without using a simulator. Fig.13The time before the pressure measured by the pressure sensor 20 starts to drop is shown as the adhesion reaching Figure 4B The optimum point is shown. The amount of gas supplied can also be optimized in the exposure apparatus by stopping the gas supply just before the pressure measured by the pressure sensor 20 drops.

[0110] The method of obtaining adhesion from the measurement value of the pressure sensor 20 according to the present embodiment can also be used together with the method of estimating adhesion described in the first embodiment. For example, adhesion can be estimated using the method described in the first embodiment, and adhesion can be obtained using both the estimation result and the adhesion obtained from the measurement value of the pressure sensor 20. More specifically, a correction value is obtained by multiplying the difference between the estimation result of adhesion and the value of adhesion obtained from the measurement value of the pressure sensor 20 by a coefficient, and the estimation result of adhesion can be corrected using the obtained correction value.

[0111] <Third Embodiment>

[0112] As described above, the fine motion stage 8 can be driven in the Z direction (a first direction orthogonal to the holding surface) by a driving mechanism (not shown). The Z direction position of the fine motion stage 8 at this time can be measured by a laser interferometer (measuring unit) (not shown).

[0113] In the second embodiment, a method of obtaining adhesion from the pressure value measured by the pressure sensor 20 has been described. In the third embodiment, a method of obtaining adhesion from the Z deviation will be described. The Z deviation is the difference between the target position of the substrate chuck 3 in the Z direction and the current position of the substrate chuck 3 in the Z direction measured by the laser interferometer (measuring unit). This is equivalent to the difference between the target position of the fine movement stage 8 in the Z direction indicated by the indication unit 110 and the position of the fine movement stage 8 in the Z direction measured by the laser interferometer (not shown). This is also equivalent to the difference between the target position of the pin member 9 in the Z direction and the position of the pin member 9 in the Z direction measured by the laser interferometer (not shown).

[0114] From the fourth interval ( Fig.11 ) to obtain adhesion. Fig.12 is a graph showing the time transition of the Z deviation. Fig.12, D1 represents the start time of the fourth interval (the end time of the third interval), and D2 represents the end time of the fourth interval (the start time of the fifth interval). In the present embodiment, the controller 100 controls the fine-motion stage 8 based on the pre-obtained Z deviation (first condition). As has been described above, when the fine-motion stage 8 is moved at a low speed in the -Z direction in the fourth interval, the substrate 2 and the substrate suction cup 3 may be difficult to separate due to adhesion. In this case, since the fine-motion stage 8 cannot be moved to the target position indicated by the indication unit 110 (the substrate suction cup 3 or the pin member 9 cannot be moved to the target position), the actual position is different from the target position in the Z direction, resulting in a Z deviation. The processing unit 130 calculates the Z deviation as the difference between the target position of the fine-motion stage 8, the substrate suction cup 3 or the pin member 9 in the Z direction and the actual position in the Z direction measured by the sensor (not shown). The Z deviation is determined by, for example Fig.12 The waveform 17 in FIG. 1 shows Z deviation. Note that the waveform 18 shows Z deviation as a reference. The waveform 18 as a reference is a reference waveform showing Z deviation in a case where the fine movement stage 8 is moved without holding the substrate 2.

[0115] In the present embodiment, the absolute value of the Z deviation value when the acquired Z deviation is the maximum value or the minimum value is defined as the Z deviation representative value. In addition, the representative value of the Z deviation used as a reference when the micro-motion stage 8 is moved without placing the substrate 2 on the substrate chuck 3 is defined as the Z deviation reference value. The maximum or minimum value of the Z deviation is the maximum or minimum value among the Z deviation representative values ​​from when the substrate 2 contacts the pin member 9 to when the entire surface of the substrate 2 is separated from the substrate chuck 3. The processing unit 130 obtains the absolute value of the Z deviation value when the Z deviation is maximum or minimum from the waveform of the acquired Z deviation. The absolute value is set as the Z deviation representative value. Adhesion is obtained based on the difference between the Z deviation representative value and the Z deviation reference value. Based on the adhesion, the optimal gas supply parameters can be obtained by the simulation described in the first embodiment. Since the adhesion can be obtained based on the Z deviation, the gas supply parameters can be optimized in the exposure device without using a simulator. For example, from Fig.12 From the state represented by waveform 17 in FIG. 1 , as the gas supply amount and / or supply time increases, the Z deviation approaches Fig.12 Before the Z deviation approaches waveform 18, the adhesion reaches Figure 4B The best point shown. The gas supply parameters are optimal just before the Z deviation overlaps with the waveform 18. In this way, the gas supply in the exposure device can also be optimized.

[0116] Similar to the second embodiment, this embodiment can be used together with the estimation result of the adhesion force according to the first embodiment. Alternatively, this embodiment can be used together with the second embodiment, or this embodiment can be used together with both the first embodiment and the second embodiment.

[0117] <Fourth Embodiment>

[0118] In the first embodiment, the gas supply is constant ( Figure 4A ). In the fourth embodiment, an example in which the gas supply amount is changed according to the lapse of time from the start of gas supply will be described.

[0119] Figure 5A A gas supply pattern is shown in which the gas supply amount is reduced as time passes from the start of gas supply. The adhesion force acting on the substrate 2 and the suction cup pin of the substrate suction cup 3 decreases as the gas supply time passes. First, the solenoid valve 51 with the largest gas supply amount is opened. After a predetermined time has passed, the solenoid valve 51 is closed and the solenoid valve 52 is opened. In this way, the supply amount is changed to the second stage. After a further predetermined time has passed, the solenoid valve 52 is closed and the solenoid valve 53 is opened. In this way, the supply amount is changed to the third stage. In this way, by reducing the gas supply amount as time passes, the risk of lateral sliding of the substrate 2 can be reduced.

[0120] Figure 5B As an example, it is shown Figure 5A The change of the adhesion force between the substrate 2 and the substrate chuck 3 during the gas supply under the gas supply control is shown. The degree of adhesion reduction changes between the section where the solenoid valve 51 is opened, the section where the solenoid valve 52 is opened, and the section where the solenoid valve 53 is opened.

[0121] Thus, in this embodiment, the amount of gas supplied is changed over time in order to achieve the desired adhesion. Figure 5B This is because if the adhesion force becomes negative, the substrate 2 slides laterally on the substrate chuck 3.

[0122] By reducing the adhesion force to the optimum point while supplying gas as described above, a state can be created in which the substrate 2 does not slide laterally on the substrate chuck 3 and the substrate chuck 3 does not wear. The reason why the optimum point is not set to the point where the adhesion force becomes zero is that a small amount of adhesion force remains to prevent the substrate 2 from sliding laterally.

[0123] On the other hand, the gas supply flow rate may be gradually increased over time. At the start of gas supply, the gas flow path 10 is in a decompression state, so the supplied gas is instantly and forcefully ejected toward the substrate 2. For example, when supplying gas to a thin substrate, if the gas supply flow rate is increased when the adhesion is strong, excessive force is instantly applied to the substrate, which may cause damage or warping of the substrate. In order to reduce this risk, it is effective to control the gas supply flow rate to increase gradually.

[0124] As in the first embodiment, by obtaining in advance a combination of an adhesion force estimated from the substrate 2 and the substrate chuck 3 and an optimal gas supply parameter corresponding to the adhesion force, gas supply corresponding to the respective characteristics can be achieved. Note that the optimal parameter can be obtained using the adhesion force obtained by the method described in the second embodiment or the third embodiment, or can be obtained using the adhesion force obtained in a combination of the first embodiment, the second embodiment, and the third embodiment.

[0125] <Fifth Embodiment>

[0126] refer to Figure 6 , the arrangement of the substrate stage 1 according to the fifth embodiment will be described. The substrate stage 1 according to the fifth embodiment is different from the substrate stage 1 according to the first embodiment ( Figure 1 ) is different in that a system with two gas flow paths is provided. More specifically, in the fifth embodiment, in addition to the gas flow path 10, a gas flow path 11 is arranged. Similar to the gas flow path 10, the gas flow path 11 is arranged so that the vacuum pump 5 sucks gas through an opening formed in the surface of the substrate chuck 3 facing the substrate 2, and the gas from the positive pressure tank 6 is supplied through the opening. The pressure in the gas flow path 11 is measured by the pressure sensor 21.

[0127] The regulator 42 is arranged on the gas flow path 11 between the vacuum pump 5 and the substrate chuck 3. The regulator 42 is configured to be able to adjust the pressure in the gas flow path 11 to a desired vacuum pressure. In addition, the solenoid valve 32 is arranged on the gas flow path 11 on the substrate chuck 3 side of the regulator 42. When the solenoid valve 32 is opened, the vacuum pump 5 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the solenoid valve 32 is closed, the pressure in the space between the substrate 2 and the substrate chuck 3 is not adjusted.

[0128] Regulators 64, 65 and 66 and electromagnetic valves 54, 55 and 56 are arranged on the gas flow path 11 between the positive pressure tank 6 and the substrate chuck 3. The regulators 64, 65 and 66 are configured to be able to adjust the pressure in the gas flow path 11 supplied from the positive pressure tank 6. The electromagnetic valves 54, 55 and 56 are arranged on the gas flow path 11 on the substrate chuck 3 side of the regulators 64, 65 and 66. When the electromagnetic valves 54, 55 and 56 are opened, the positive pressure tank 6 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3. When the electromagnetic valves 54, 55 and 56 are closed, the pressure in the space between the substrate 2 and the substrate chuck 3 is not adjusted. Note that, Figure 6 Three sets of regulators and solenoid valves on the gas flow path 11 are shown, but the number of sets is not limited to a specific number. The number of sets may be one, four, or more. Instead of a combination of a solenoid valve and a regulator, a servo valve whose opening / closing degree can be freely set may be formed.

[0129] When the substrate 2 is held by the substrate chuck 3 by vacuum adsorption, the solenoid valve 31 and the solenoid valve 32 are opened, and the solenoid valves 51, 52, and 53 and the solenoid valves 54, 55, and 56 are closed. In this way, the vacuum pump 5 can reduce the pressure in the space between the substrate 2 and the substrate chuck 3. Since it is sufficient as long as the pressure in the space between the substrate 2 and the substrate chuck 3 can be reduced, one of the solenoid valve 31 and the solenoid valve 32 may be opened.

[0130] When the substrate 2 is released from the substrate chuck 3, the solenoid valves 31 and 32 are closed, at least one of the solenoid valves 51, 52 and 53 is opened, and at least one of the solenoid valves 54, 55 and 56 is opened. In this way, the pressure in the space between the substrate 2 and the substrate chuck 3 can be increased by the gas from the positive pressure tank 6.

[0131] Similar to the first embodiment, by changing the settings of the regulators 61, 62, 63, 64, 65, and 66, the solenoid valves to be opened among the solenoid valves 51, 52, and 53 can be changed, and the solenoid valves to be opened among the solenoid valves 54, 55, and 56 can be changed. In this way, the flow rate and pressure of the gas filling the space between the substrate 2 and the substrate chuck 3 can be changed.

[0132] Figure 7 3 is a plan view of the substrate suction cup 3 in this embodiment when viewed from the +Z direction. An annular sealing portion 60 is provided at a position along the outer periphery of the substrate suction cup 3. However, the presence, number and arrangement of the sealing portion 60 are not limited to Figure 7 For example, the substrate suction cup 3 may not be provided with a sealing portion. Alternatively, a plurality of sealing portions may be provided.

[0133] The surface of the substrate suction cup 3 is provided with a plurality of protrusions (not shown), and the upper surfaces of the plurality of protrusions can be used as a holding surface for holding the substrate 2. The plurality of protrusions are referred to as suction cup pins. The substrate suction cup 3 includes an opening 7 connected to the gas flow path 10. The substrate suction cup 3 also includes an opening 80 connected to the gas flow path 11. Figure 7 Six openings 7 and six openings 80 are shown, but their arrangement and number are not limited to Figure 7 The example shown. In this way, a plurality of openings may be formed in the surface of the substrate chuck 3 facing the substrate 2. The controller 100 may independently control the supply amount of gas from a first opening among the plurality of openings and the supply amount of gas from a second opening among the plurality of openings. Alternatively, the plurality of openings may include openings for gas supply and openings not for gas supply.

[0134] Compared with the first embodiment, the system of two gas flow paths has the advantage that the gas supply amount can be finely set. It is also possible to change the balance between the supply amount of gas supplied from the gas flow path 10 and the supply amount of gas supplied from the gas flow path 11 according to the wear condition of the chuck. By changing the balance of the gas supply amount, the adhesion between the substrate 2 and the substrate chuck 3 after the gas supply can be changed, thereby preventing local wear of the substrate chuck 3.

[0135] Next, the gas supply method will be described. In the first embodiment, the gas supply flow rate is controlled by opening one of the solenoid valves 51, 52, and 53, and the gas supply time is controlled by the time between the opening and closing of the solenoid valve. In the present embodiment, the gas can be supplied by opening at least one of the solenoid valves 51, 52, 53, 54, 55, and 56. By dividing the system, the flow rate of the gas supplied to the space between the substrate 2 and the substrate chuck 3 can be finely set.

[0136] The number of positive pressure tanks 6 is not limited to one. For example, a positive pressure tank may be formed for each of the gas flow path 10 and the gas flow path 11. In this case, since the gas supply amount can be increased, optimal gas supply can be achieved even for a substrate with a large adhesion.

[0137] The supply flow rate and supply amount of the gas supplied from the gas flow path 10 to the space between the substrate 2 and the substrate chuck 3 and the supply flow rate and supply amount of the gas supplied from the gas flow path 11 to the space between the substrate 2 and the substrate chuck 3 may be set separately.

[0138] <Sixth Embodiment>

[0139] In the sixth embodiment, compared with the fifth embodiment, an example in which a plurality of openings for supplying gas is provided will be described. In the sixth embodiment, the gas supply is changed according to the passage of time. In the sixth embodiment, the gas can be supplied by opening at least one of the electromagnetic valves 51, 52, 53, 54, 55, and 56. Then, according to the passage of time, the electromagnetic valve to be opened is switched. In this way, the supply flow rate of the gas supplied to the space between the substrate 2 and the substrate chuck 3 can be finely set.

[0140] Various embodiments have been described above. In any of the embodiments, the relationship between the original plate 203 and the original plate chuck formed on the original plate stage 204 is similar to the relationship between the substrate 2 and the substrate chuck 3. Therefore, any of the first to sixth embodiments can be applied to the gas supply control for releasing the original plate 203 from the original plate chuck.

[0141] <Seventh Embodiment>

[0142] In the above-described embodiment, it has been described that the gas supply is controlled based on the information about the adhesion of the substrate to the holding surface (information about the ease of separation) obtained in advance. The gas supply may also be controlled without the information about the adhesion of the substrate (information about the ease of separation). As described above, it is assumed that the jobs of the exposure processing job are input in batches, and the characteristics of the substrate change for each batch. Therefore, the controller 100 may set the content of the gas supply control performed via the gas flow path 10 to release the holding of the substrate 2 by the substrate suction cup 3 for each batch. Alternatively, the controller 100 may set the content of the gas supply control performed via the gas flow path 10 to release the holding of the substrate 2 by the substrate suction cup 3 for each substrate, not for each batch.

[0143] <Example of the method for manufacturing an article>

[0144] The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing an article, such as a micro device (such as a semiconductor device) or a component having a micro structure. Fig.16 is a flow chart of the article manufacturing method according to this embodiment.

[0145] First, a forming step of forming a pattern on the substrate 2 is performed (step S210). Next, an acquiring step of acquiring information about the adhesion between the substrate 2 and the substrate chuck 3 is performed (step S220). Next, a supplying step of supplying a gas between the substrate 2 and the substrate chuck 3 based on the information about the adhesion acquired in the acquiring step is performed (step S230). Next, after the supply of the gas starts in the supplying step, a separating step of separating the substrate 2 from the substrate chuck 3 is performed (step S240). Then, a processing step of processing the substrate 2 separated in the separating step is performed (step S250).

[0146] The processing steps may include other known steps (oxidation, film formation, deposition, doping, planarization, etching, resist removal, cutting, bonding, packaging, etc.). The article manufacturing method of this embodiment is more advantageous than the conventional method in at least one of the performance, quality, productivity and manufacturing cost of the article.

[0147] While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.The scope of the following claims is to be accorded the broadest interpretation so as to encompass all modifications and equivalent structures and functions.

Claims

1. A substrate holding device, comprising: a holder configured to hold a substrate; and a gas supplier configured to supply a gas between the substrate and the holder, wherein, when the substrate is separated from the holder holding the substrate, the gas supplier supplies the gas based on information on adhesion between the substrate and the holder.

2. The device according to claim 1, wherein: The information about the adhesion includes at least one of a property of the substrate and a property of the holder.

3. The device according to claim 2, wherein: The characteristics of the substrate include at least one of an amount of warpage of the substrate, roughness of a surface of the substrate in contact with the holder, a type of a film formed on the substrate, a material of the substrate, and a thickness of the substrate.

4. The device according to claim 2, wherein: The characteristics of the holder include at least one of flatness of a holding surface holding the substrate, surface roughness of the holding surface, thickness of a plurality of protrusions provided on the holder, and a material of the holder.

5. The device according to claim 1, wherein The gas supplier comprises: a conduit configured to allow the gas to flow therethrough; and The duct is also used to depressurize a space between the substrate and the holder to hold the substrate by the holder.

6. The device according to claim 1, further comprising a controller configured to control the supply of the gas by the gas supplier, in, The controller is configured to control at least one of a supply amount of the gas and a supply time of the gas.

7. The device according to claim 6, wherein: The controller is configured to control a supply amount of the gas so as to be changed according to an elapsed time from a start of supplying the gas.

8. The device according to claim 6, wherein A plurality of openings configured to supply the gas are formed in a surface of the holder facing the substrate, and The holder is configured to control a supply amount of gas from a first opening among the plurality of openings and a supply amount of gas from a second opening among the plurality of openings, respectively.

9. The device according to claim 8, wherein: The plurality of openings include openings for gas supply and openings not for gas supply.

10. The apparatus according to claim 1, further comprising: a driving mechanism configured to drive the holder in a first direction orthogonal to a holding surface of the holder holding the substrate; and a measuring unit configured to measure a position of the holder in the first direction, The information on the adhesion force is obtained based on a difference between a target position of the holder in the first direction and a position of the holder in the first direction measured by the measuring unit.

11. The apparatus according to claim 1, further comprising: a conduit disposed in the gas supply for allowing the gas to flow therethrough; and a pressure sensor configured to measure the pressure in the pipe, Wherein, information about the adhesion force is obtained based on the pressure measured by the pressure sensor.

12. The device according to claim 1, further comprising a controller configured to control the supply of the gas by the gas supplier, in, The controller is configured to set the content of control of the supply of the gas for each batch.

13. A substrate processing device, comprising: a holder configured to hold a substrate; and a controller configured to control supply of gas between the substrate and the holder, Wherein, when the substrate is separated from the holder holding the substrate, the controller is configured to control the supply of the gas based on information on the adhesion between the substrate and the holder.

14. The device according to claim 13, wherein: The controller is configured to control a supply amount and a supply time of the gas.

15. The device according to claim 14, wherein: The controller is configured to control a supply amount of the gas so as to be changed according to an elapsed time from a start of supplying the gas.

16. The device according to claim 13, wherein: The apparatus is a lithography apparatus configured to form a pattern on a substrate.

17. A method for separating a substrate from a holder holding the substrate, comprising: obtaining information about adhesion between the substrate and the holder; supplying a gas between the substrate and the holder based on the information about the adhesion force acquired in the acquiring; as well as After starting the supply of the gas in the supplying, the substrate is separated from the holder.

18. The method according to claim 17, wherein: The information about the adhesion includes at least one of a property of the substrate and a property of the holder.

19. A method for manufacturing an article, comprising: forming a pattern on a substrate held by a holder; obtaining information about adhesion between the substrate and the holder; supplying a gas between the holder and the substrate having a pattern formed in the forming based on the information about the adhesion force acquired in the acquiring; After starting supply of the gas in the supplying, separating the substrate from the holder; processing the substrate separated in the separating; as well as An article is manufactured using the substrate processed in the process.

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