Wafer supporting body lining, leveling tool of wafer supporting body lining, heating disc and thin film deposition equipment

Abstract

The invention discloses wafer supporting body bushings and a leveling tool thereof, a heating plate and thin film deposition equipment, the heating plate comprises a plurality of wafer supporting body bushings and a voltage regulator, the plurality of wafer supporting body bushings are mounted in a plurality of mounting holes in the plate surface of the heating plate, the wafer supporting body bushings comprise bushings, piezoelectric ceramics and wafer supporting bodies, and the piezoelectric ceramics are mounted in the mounting holes in the plate surface of the heating plate. The lining is provided with an inner cavity, the top of the inner cavity is provided with an opening, the piezoelectric ceramic is arranged in the inner cavity, the wafer supporting body is arranged on the surface of the top of the piezoelectric ceramic, and the wafer supporting body is exposed out of the opening; wherein the piezoelectric ceramic is configured to deform according to voltage so as to jack the wafer supporting body. According to the invention, the piezoelectric ceramic deforms to jack the wafer support body upwards, and the lifting height of the wafer support body can be precisely adjusted within a certain range based on the control of the input voltage, so that the temperature requirements of different processes are met, and the precise control of the height of the wafer support body is realized.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer support bushing and a leveling tool thereof, a heating plate and a thin film deposition device. Background Art

[0002] In the field of UV curing technology, UV light sources are widely used to cure photosensitive materials such as photoresists and other coating materials, especially in the production of semiconductor manufacturing and precision optical components. However, in this process, the energy provided by the UV light source not only drives the chemical reaction, but also causes the generation of heat, which may cause the surface temperature of the wafer to be too high and cause the problem of uneven temperature distribution. Excessive temperature and uneven temperature distribution will directly affect the quality of the film layer, including its uniformity and consistency, and thus affect the performance of the final product. The height of the wafer support has a significant effect on the surface temperature of the wafer. Experimental data show that when the height of the wafer support is set to 0.1 mm, the average surface temperature of the wafer can reach about 50 degrees Celsius. In contrast, a temperature environment of 30 degrees Celsius or lower is more ideal, because such conditions help to improve the uniformity and consistency of the film layer during the coating process, while reducing the occurrence of defects. Therefore, in order to achieve and maintain an ideal low-temperature environment, the height of the wafer support needs to be precisely controlled to ensure that the surface temperature of the wafer remains within a suitable range. However, tolerances are unavoidable in the assembly of the wafer support, and the overall height after assembly is difficult to ensure to be within a tolerance range of 0.01 mm. Such slight changes in height can cause unpredictable changes in the surface temperature of the wafer, thereby affecting the quality of the film layer. Summary of the invention

[0003] The embodiments of the present invention provide a wafer support sleeve and a leveling tool thereof, a heating plate and a thin film deposition device, aiming to solve the problem that the height of the existing wafer support is difficult to accurately control.

[0004] In a first aspect, the present invention provides a wafer support sleeve, comprising: a sleeve, a piezoelectric ceramic and a wafer support, wherein the sleeve is provided with an inner cavity, the top of the inner cavity has an opening, the piezoelectric ceramic is provided in the inner cavity, the wafer support is provided on the top surface of the piezoelectric ceramic, and the wafer support is exposed at the opening;

[0005] Wherein, the piezoelectric ceramic is configured to generate deformation according to different voltages to lift the wafer support to adjust its height.

[0006] Furthermore, the top surface of the piezoelectric ceramic is recessed to form a concave surface, and the bottom of the wafer support body is in surface contact with the concave surface.

[0007] Furthermore, the wafer support sleeve also includes an annular top cover, which is installed on the top of the sleeve and is arranged around the periphery of the wafer support, and the inner diameter of the annular top cover is smaller than the diameter of the wafer support.

[0008] Furthermore, the lower surface of the annular top cover is provided with a boss, and the top end surface of the bushing is provided with a groove; or, the lower surface of the annular top cover is provided with a groove, and the top end surface of the bushing is provided with a boss; the boss is embedded in the groove.

[0009] Furthermore, a first positioning through groove and a second positioning through groove are formed in the radial direction on the upper surface of the annular top cover, and the first positioning through groove is symmetrical to the second positioning through groove in the radial direction.

[0010] Furthermore, a wire passing hole is provided at the bottom of the bushing, the wire passing hole is communicated with the inner cavity, and the wire passing hole is used for allowing a wire to pass through and connect with the piezoelectric ceramic.

[0011] Furthermore, the wafer support body is spherical.

[0012] In the second aspect, the present invention also provides a heating plate, comprising: a plate body and a plurality of wafer support bushings and a voltage regulator, wherein the wafer support bushing is the above-mentioned wafer support bushing, a plurality of mounting holes are opened on the plate surface of the plate body, and the plurality of wafer support bushings are respectively mounted in the plurality of mounting holes, the voltage regulator is electrically connected to the piezoelectric ceramics of the plurality of wafer support bushings, and the voltage regulator is used to adjust the input voltage of the piezoelectric ceramics.

[0013] In a third aspect, the present invention further provides a wafer support bushing leveling tool, which is applied to the wafer support bushing of the first aspect, and is used to level the height difference between the wafer support and the plate surface of the heating plate, and the heating plate is the heating plate of the second aspect, and the leveling tool comprises: a tool body, and the lower surface of the tool body is provided with a first overlapping plane and a second overlapping plane and a positioning portion, the first overlapping plane and the second overlapping plane are in the same horizontal plane, and the positioning portion protrudes from the lower surface of the tool body;

[0014] Among them, when the positioning part and the bushing are positioned together, the first overlapping plane is pressed against the disk surface of the heating disk, and the second overlapping plane is pressed against the top of the wafer support body, so that the wafer support body and the disk surface of the heating disk are at the same height.

[0015] In a fourth aspect, the present invention further provides a thin film deposition device, comprising the heating plate of the second aspect, wherein the heating plate uses the leveling tool of the third aspect to level the height between a wafer support and a surface of the heating plate.

[0016] The present invention provides a wafer support bushing and its leveling tooling, a heating plate and a thin film deposition device. The heating plate comprises a plurality of wafer support bushings and a voltage regulator. The plurality of wafer support bushings are installed in a plurality of installation holes on the plate surface of the heating plate. The wafer support bushing comprises a bushing, a piezoelectric ceramic and a wafer support. The piezoelectric ceramic is arranged in the bushing, and the wafer support is arranged on the top surface of the piezoelectric ceramic. The piezoelectric ceramic is electrically connected to the voltage regulator. The leveling tooling is used to adjust the height between the wafer support and the plate surface of the heating plate so that the wafer support and the plate surface of the heating plate are at the same height. The voltage regulator is used to adjust the input voltage of the piezoelectric ceramic to cause it to deform slightly. The piezoelectric ceramic is deformed to lift the wafer support upward, so that the height of the wafer support can be higher than the plate surface of the heating plate. The lifting height of the wafer support can be accurately adjusted within a certain range based on the control of the input voltage, so as to meet the temperature requirements of different processes, realize accurate control of the height of the wafer support, and improve the coating quality of ultraviolet curing. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0018] Figure 1 A schematic diagram of a wafer support sleeve according to an embodiment of the present invention is shown;

[0019] Figure 2 An exploded schematic diagram of a wafer support bushing according to an embodiment of the present invention is shown;

[0020] Figure 3 A schematic cross-sectional view of a wafer support sleeve according to an embodiment of the present invention is shown;

[0021] Figure 4 A schematic diagram of a heating plate according to an embodiment of the present invention is shown;

[0022] Figure 5 A schematic cross-sectional view of a wafer support sleeve, a leveling tool and a heating plate according to an embodiment of the present invention is shown;

[0023] Reference numerals:

[0024] 1. Sapphire bushing; 11. Bushing; 111. Groove; 112. Wire hole; 113. Inner cavity; 12. Piezoelectric ceramic; 121. Concave surface; 13. Sapphire; 14. Annular top cover; 141. Boss; 142. First positioning slot; 143. Second positioning slot; 2. Heating plate; 21. Mounting hole; 3. Leveling tool; 31. First overlapping plane; 32. Second overlapping plane; 33. Positioning part; DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] The directional terms mentioned in the present invention, such as "upper", "lower", "front", "back", "left", "right", "inner", "outer", "side", etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but are not used to limit the present invention. In addition, in the drawings, structures with similar or identical structures are represented by the same reference numerals.

[0027] UV curing refers to the process of curing by chemically reacting a specific coating or material using ultraviolet (UV) radiation energy. In the field of thin film deposition, UV curing is mainly used to promote the chemical reaction of thin film materials, achieve rapid curing and optimize the performance of the film. Sapphire is often used to support the wafer during UV curing, especially in semiconductor manufacturing and other applications that require high precision and high-quality coatings. Sapphire (Al2O3) is an ideal choice due to its excellent physical and chemical properties, such as high hardness, good thermal stability, high transparency and tolerance to a variety of chemicals.

[0028] Through thermodynamic simulation analysis, it is found that the overall height of sapphire has a significant effect on the surface temperature of the wafer. Specifically, when the sapphire height is 0.1 mm, 0.06 mm and 0.03 mm, the corresponding average surface temperature of the wafer is approximately 50°C, 40°C and 30°C. This result shows that as the height of sapphire decreases, the temperature of the wafer surface also decreases. Temperature is an important factor affecting the uniformity and consistency of the film during UV curing. Lower temperatures (such as below 30°C) are closer to the ideal coating conditions, which can significantly improve the quality of the film and reduce the generation of defects. Therefore, in order to optimize the performance of the film, it is particularly important to control the height of sapphire within a specific range. However, due to the inherent brittleness of the material, sapphire pins face great challenges when performing interference fit installation. This not only complicates the installation process, but also makes it difficult to ensure that the overall height of the sapphire after installation remains within the tolerance range of ±0.01 mm. This slight deviation in height will directly lead to inaccurate temperature control, which in turn affects the final coating quality. In view of the above, in order to ensure the best coating effect, the height of sapphire should be controlled within the SPEC requirements (≤0.03 mm) as much as possible. This can not only maintain the wafer surface temperature within the ideal range, but also effectively improve the uniformity and consistency of the film layer during the UV curing process, thereby ensuring high-quality coating products.

[0029] To this end, an embodiment of the present invention proposes a wafer support sleeve and its leveling tooling, a heating plate and a thin film deposition device, which solves the problem that the height of the existing sapphire is difficult to accurately control. The height of the sapphire is accurately controlled by adjusting the input voltage of the piezoelectric ceramic to cause it to produce a slight deformation to lift the sapphire, thereby improving the coating quality.

[0030] The embodiment of the present invention solves the problem that the sapphire height is difficult to accurately control, and the specific ideas are as follows:

[0031] A sapphire bushing is designed, in which piezoelectric ceramics are arranged, and sapphire is placed on the piezoelectric ceramics. The piezoelectric ceramics are controlled by the voltage regulator to input voltage, and the piezoelectric effect of the piezoelectric ceramics is used to produce a slight deformation. The piezoelectric ceramics are deformed to lift the sapphire upward, so that the height of the sapphire can be adjusted. When facing different process requirements, the piezoelectric ceramic input voltage is adjusted by the voltage regulator to control the sapphire lifting height to be adjusted within the range of 0-0.1mm, so as to meet the temperature requirements of different processes. In the UV curing process, the sapphire height is controlled to be equal to the plate surface of the heating plate with the help of the leveling tool. The leveling tool makes the sapphire and the plate surface of the heating plate contact with the leveling tool at the same time for leveling, and the height difference between the sapphire and the plate surface of the heating plate is controlled to be 0mm. The piezoelectric ceramics are energized to control the slight deformation to adjust the overall height of the sapphire to meet SPEC (≤0.03mm) and improve the coating quality.

[0032] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0033] See also Figure 1-Figure 5 An embodiment of the present invention shows a wafer support bushing, comprising: a bushing 11, a piezoelectric ceramic 12 and a wafer support, wherein the bushing 11 is provided with an inner cavity 113, the top of the inner cavity 113 has an opening, the piezoelectric ceramic 12 is arranged in the inner cavity 113, the wafer support is arranged on the top surface of the piezoelectric ceramic 12, and the wafer support is exposed at the opening; wherein the piezoelectric ceramic 12 is configured to generate deformation according to different voltages to lift the wafer support to adjust its height.

[0034] Reference Figure 1-Figure 3 Specifically, the wafer support of this embodiment can be sapphire, which is often used as a substrate material for supporting wafers due to its excellent thermal stability and transparency. Of course, it can be understood that the wafer support can also be other supporting elements with similar material properties to sapphire. For the convenience of description, the wafer support sleeve is hereinafter referred to as sapphire sleeve 1, and the wafer support is referred to as sapphire 13. The sleeve 11 is a cylindrical sleeve structure, one end is closed and the other end has an opening, and the interior of the sleeve 11 is the inner cavity 113. The shape and structure of the piezoelectric ceramic 12 match the inner cavity 113, and the piezoelectric ceramic 12 is installed in the inner cavity 113 through clearance fit. The height of the piezoelectric ceramic 12 is lower than the height of the sleeve 11, so that the top surface of the piezoelectric ceramic 12 and the inner wall of the sleeve 11 form a storage space for the sapphire 13. The sapphire 13 is in the shape of a sphere, and the sapphire 13 is placed on the top surface of the piezoelectric ceramic 12 and accommodated in the storage space. The height of the sapphire 13 after placement is roughly equivalent to the height of the sleeve 11. The top of the inner cavity 113 is a circular opening, and the sapphire 13 is exposed in the circular opening, and the top of the sapphire 13 is roughly at the same height as the opening. When the sapphire bushing 1 is installed in the mounting hole 21 of the heating plate 2, with the help of the leveling tool 3, the top of the sapphire 13 and the top of the bushing 11 are at the same height as the surface of the heating plate 2, so that the surface temperature of the heating plate 2 is closer to the ideal coating condition, which can improve the uniformity and consistency of the film layer and reduce the occurrence of defects. In the face of different process requirements, when the surface of the heating plate 2 needs to reach different temperatures, the sapphire 13 can be raised under the action of the piezoelectric ceramic 12, and the sapphire 13 is slightly higher than the opening to support the wafer.

[0035] Specifically, the piezoelectric ceramic 12 is a material with a piezoelectric effect that can convert mechanical energy into electrical energy and vice versa. This property originates from the crystal structure inside the material, which will deform or generate electric charge when subjected to external force or electric field. The piezoelectric ceramic 12 of this embodiment mainly utilizes the inverse piezoelectric effect of the piezoelectric ceramic 12. When a voltage is applied to the piezoelectric ceramic 12, the electric domains inside the material will be rearranged, causing a slight deformation of the material. In this way, the electrical signal can be converted into mechanical motion or vibration. The inverse piezoelectric effect is the basis for the deformation of the piezoelectric ceramic 12 due to voltage. When a voltage is applied to both sides of the piezoelectric ceramic 12, it will expand or contract in the thickness direction. Specifically: Longitudinal effect: If the direction of voltage application is the same as the polarization direction of the piezoelectric ceramic 12, the ceramic will stretch along this direction. Transverse effect: If the direction of voltage application is perpendicular to the polarization direction of the piezoelectric ceramic 12, the ceramic will shrink in the vertical direction. The piezoelectric ceramic 12 of this embodiment will be polarized during the manufacturing process to give it a specific electric domain arrangement. The polarization direction determines the deformation direction of the material when voltage is applied. The piezoelectric ceramic 12 of this embodiment is mainly used to lift the sapphire 13 to adjust the height of the device, so the thickness expansion mode is adopted, and the piezoelectric ceramic 12 expands in the thickness direction (i.e., increases the height), so it should be ensured that the voltage application direction is consistent with the polarization direction. The deformation amount of a single-layer piezoelectric ceramic 12 is usually very small. In order to obtain a greater height increase, multiple piezoelectric ceramics 12 can be stacked together. This structure is called a piezoelectric stack (Piezoelectric Stack). Each piezoelectric sheet will expand to the same extent under the same voltage, so the total deformation amount is the sum of each layer, and the stacking number of piezoelectric ceramics 12 is specifically set according to the actual height requirement. When a voltage is applied to the piezoelectric ceramic 12, under the action of the piezoelectric effect, the piezoelectric ceramic 12 can produce a slight deformation in the height direction, lift the sapphire 13, and thus adjust the height of the sapphire 13. Among them, the applied voltage amplitude determines the deformation of the piezoelectric ceramic 12. Generally speaking, the greater the voltage, the greater the deformation. It should be noted that the voltage cannot exceed the breakdown voltage of the material, otherwise it may cause damage to the material. According to the polarization direction, applying a positive voltage or a negative voltage can control the expansion or contraction of the piezoelectric ceramic 12. For the thickness expansion mode, applying a positive voltage will cause the piezoelectric ceramic 12 to expand in the thickness direction, while applying a negative voltage will cause it to contract. Therefore, the height of the sapphire 13 is adjusted by applying a suitable positive voltage to the piezoelectric ceramic 12 to cause it to expand in the thickness direction.

[0036] Through this embodiment, the piezoelectric effect of the piezoelectric ceramic 12 is utilized, and different voltages are applied to cause the piezoelectric ceramic 12 to produce a slight deformation to increase the height of the sapphire 13. The lifting height of the sapphire 13 can be precisely adjusted within a certain range, thereby meeting the temperature requirements of different processes, achieving precise control of the height of the sapphire 13, and improving the quality of UV-cured coating.

[0037] Reference Figure 3 In one embodiment, the top surface of the piezoelectric ceramic 12 is concave to form a concave surface 121, and the bottom of the sapphire 13 is in surface contact with the concave surface 121. Specifically, the shape and structure of the piezoelectric ceramic 12 match the inner cavity 113, and the top surface of the piezoelectric ceramic 12 is concave toward the center thereof to form a concave conical surface, and the lower half of the spherical body of the sapphire 13 is in surface contact with the conical surface, so that the spherical sapphire 13 can be prevented from rolling, so that the sapphire 13 can be fixedly installed, the position of the sapphire 13 is ensured to be stable, and the stability and reliability of the wafer support are improved.

[0038] Reference Figure 2 In one embodiment, the sapphire bushing 1 further comprises an annular top cover 14, which is mounted on the top of the bushing 11 and is arranged around the periphery of the sapphire 13, and the inner diameter of the annular top cover 14 is smaller than the diameter of the sapphire 13. Specifically, the annular top cover 14 is fixedly mounted on the top of the bushing 11, and there are many ways to mount the annular top cover 14 and the bushing 11, such as snap fit, interference fit, thread fit, etc., which are not limited here. When the annular top cover 14 is mounted on the top of the bushing 11, the sapphire 13 is located in the inner ring of the annular top cover 14, and the annular top cover 14 surrounds the periphery of the sapphire 13. The inner diameter of the annular top cover 14, that is, the inner ring diameter thereof, is smaller than the diameter of the spherical sapphire 13. In this way, the sapphire 13 will be limited under the annular top cover 14 and blocked by the annular top cover 14 to prevent the sapphire 13 from jumping out of the bushing 11.

[0039] Reference Figure 2In this embodiment, the lower surface of the annular top cover 14 is provided with a boss 141, and the top end surface of the bushing 11 is provided with a groove 111; or, the lower surface of the annular top cover 14 is provided with a groove 111, and the top end surface of the bushing 11 is provided with a boss 141; the boss 141 is embedded in the groove 111. Specifically, the annular top cover 14 and the bushing 11 are installed through the concave-convex matching structure of the boss 141 and the groove 111. The lower surface of the annular top cover 14 is convexly formed with two rectangular bosses 141, and the top end surface of the bushing 11 is concavely formed with two rectangular grooves 111. The two rectangular bosses 141 are inserted into the two rectangular grooves 111 to complete the installation of the annular top cover 14 and the bushing 11. It is understandable that the lower surface of the annular top cover 14 may be concavely formed with two rectangular grooves 111, and the top end surface of the bushing 11 may be convexly formed with two rectangular bosses 141, and the two rectangular grooves 111 are inserted into the two rectangular bosses 141 to complete the installation of the annular top cover 14 and the bushing 11. The structure is simple, the installation is convenient, and the processing cost is low.

[0040] Reference Figure 2 In this embodiment, the upper surface of the annular top cover 14 is provided with a first positioning slot 142 and a second positioning slot 143 along its radial direction, and the first positioning slot 142 and the second positioning slot 143 are symmetrical along the radial direction. Specifically, in order to cooperate with the leveling tool 3, two positioning structures are provided on the upper surface of the annular top cover 14, namely the first positioning slot 142 and the second positioning slot 143. Both positioning slots are provided along the radial direction of the annular top cover 14, and are radially symmetrical relative to the center of the annular top cover 14, and both positioning slots are transversely penetrating slot structures. The bushing 11 is installed in the mounting hole 21 of the surface of the heating plate 2. When the leveling fixture 3 is leveled, the two positioning parts 33 protruding downward from the bottom of the leveling fixture 3 are respectively inserted into the two positioning slots, and the bottom lower surface of the leveling fixture 3 is simultaneously against the top of the sapphire 13 and the surface of the heating plate 2, thereby ensuring that the top of the sapphire 13 is flush with the surface of the heating plate 2, so that the height of the sapphire 13 is the same as the surface of the heating plate 2. The leveling fixture 3 is positioned by the two positioning slot structures, so that the leveling fixture 3 can stably press down the sapphire 13 to make it equal to the surface of the heating plate 2, ensuring the reliability of leveling, and the structure is simple and the leveling is convenient.

[0041] Reference Figure 3In one embodiment, a wire hole 112 is provided at the bottom of the bushing 11, and the wire hole 112 is connected to the inner cavity 113. The wire hole 112 is used for allowing a wire to pass through and connect to the piezoelectric ceramic 12. Specifically, the sapphire bushing 1 is installed in the mounting hole 21 on the disk surface of the heating disk 2, and multiple sapphire bushings 1 are respectively installed in multiple mounting holes 21. A wire hole 112 is provided at the bottom of each bushing 11, and the wire hole 112 is connected to the inner cavity 113, so that the wire can pass through the wire hole 112 and connect to the piezoelectric ceramic 12 in the inner cavity 113. A main wire is also provided in the heating disk 2, and the main wire is electrically connected to the piezoelectric ceramic 12 through multiple wires passing through the wire holes 112 on the multiple bushings 11. The electrical connection with the piezoelectric ceramic 12 is achieved by passing the wire through the wire hole 112, which has a simple structure, convenient installation and low processing cost.

[0042] Reference Figure 4 The embodiment of the present invention further provides a heating plate 2, comprising: a plate body, a plurality of sapphire bushings 1, and a voltage regulator, wherein the sapphire bushings 1 are the sapphire bushings 1 of the above embodiment, a plurality of mounting holes 21 are provided on the plate surface of the plate body, and the plurality of sapphire bushings 1 are respectively mounted in the plurality of mounting holes 21, and the voltage regulator is electrically connected to the piezoelectric ceramics 12 of the plurality of sapphire bushings 1, and the voltage regulator is used to adjust the input voltage of the piezoelectric ceramics 12. Specifically, the sapphire bushings 1 have been described in detail in the above embodiment, and for the sake of brevity of the specification, they will not be described here again.

[0043] In this embodiment, mounting holes 21 are respectively provided at multiple different positions on the surface of the heating plate 2, the mounting holes 21 are provided with internal threads, and the bushing 11 is provided with external threads, and the bushing 11 is installed in the mounting holes 21 through threaded matching. The voltage regulator is electrically connected to the piezoelectric ceramics 12 in the multiple sapphire bushings 1 one by one through the internal wires in the heating plate 2, and the voltage regulator can independently control the input voltage of each piezoelectric ceramic 12, thereby adjusting the height of the sapphire 13 on each bushing 11.

[0044] In order to illustrate that the piezoelectric ceramic 12 of this embodiment adjusts the height of the sapphire 13 under different input voltages, a specific example is provided below.

[0045] Assume that the piezoelectric ceramic uses PZT (lead zirconate titanate), which is a commonly used high-sensitivity piezoelectric ceramic material. For PZT material, the typical thickness stretching mode piezoelectric constant d 33About 650pm / V (picometer / volt); Initial state: At 0V voltage, the sapphire is at the lowest position, that is, the height relative to the heating plate is 0mm. Target height: The sapphire needs to be raised to 0.01mm, 0.03mm and 0.06mm respectively. The height change Δh of the sapphire can be calculated by the following formula: Δh = d 33 × V. Where Δh is the height change of sapphire, d 33 is the piezoelectric constant (unit: meter / volt), and V is the applied voltage (unit: volt). According to the above formula, applying a voltage of about 46.15V can raise the sapphire by 0.03mm; applying a voltage of about 92.31V can raise the sapphire by 0.06mm; applying a voltage of about 153.85V can raise the sapphire by 0.1mm.

[0046] Through this embodiment, in a specific application, the temperature required by the process is input, the voltage regulator is controlled to provide a corresponding input voltage, and the height of the sapphire 13 is adjusted to meet the temperature requirements of the process. After the power is turned off, the sapphire 13 returns to its original height. Therefore, the input voltage of the piezoelectric ceramic 12 is adjusted by the voltage regulator, so that the height of the sapphire 13 can be accurately controlled to meet the temperature requirements of different processes.

[0047] Reference Figure 5 The present invention also provides a wafer support bushing leveling tool 3, which is applied to the above-mentioned wafer support bushing, and the leveling tool 3 is used to level the height difference between the wafer support and the disk surface of the heating disk 2, and the heating disk 2 is the above-mentioned heating disk 2, and the leveling tool 3 includes: a tool body, the lower surface of the tool body is provided with a first overlapping plane 31 and a second overlapping plane 32 and a positioning portion 33, the first overlapping plane 31 and the second overlapping plane 32 are in the same horizontal plane, and the positioning portion 33 protrudes from the lower surface of the tool body; wherein, when the positioning portion 33 cooperates with the bushing 11 for positioning, the first overlapping plane 31 is pressed against the disk surface of the heating disk 2, and the second overlapping plane 32 is pressed against the top of the wafer support, so that the wafer support and the disk surface of the heating disk 2 are at the same height. Specifically, the wafer support bushing and the heating disk 2 have been described in detail in the above-mentioned embodiments, and for the sake of brevity of the specification, they will not be repeated here.

[0048] In this embodiment, the leveling tool 3 is a cylindrical structure as a whole, and two positioning parts 33 are provided on the lower surface of the bottom of the leveling tool 3, and the two positioning parts 33 protrude from the lower surface. The two positioning parts 33 correspond to the positions of the two positioning grooves on the annular top cover 14, and the two positioning parts 33 are embedded in the two positioning grooves during leveling. In the lower surface, the inner area between the two positioning parts 33 is the second overlap plane 32 that contacts the top of the sapphire 13, and the outer area outside the two positioning parts 33 is the first overlap plane 31 that contacts the disk surface of the heating disk 2. During leveling, align the two positioning parts 33 of the leveling tool 3 with the two positioning slots on the annular top cover 14 and insert them. The leveling tool 3 is overlapped on the surface of the heating plate 2, and the first overlap plane 31 of the lower surface is pressed against the surface of the heating plate 2, and the second overlap plane 32 of the lower surface is pressed against the top of the sapphire 13. Since the first overlap plane 31 and the second overlap plane 32 of the lower surface are at the same level, the top of the sapphire 13 is flush with the surface of the heating plate 2, that is, the height of the sapphire 13 is the same as the surface of the heating plate 2, and the height difference between the height of the sapphire 13 and the surface of the heating plate 2 is zero. By controlling the input voltage to adjust the micro deformation of the piezoelectric ceramic 12, the overall height of the sapphire 13 is increased (the overall height of the sapphire 13 refers to the height of all sapphires 13 on the surface), and the height of the sapphire 13 is controlled to meet SPEC (≤0.03mm) to meet the process temperature requirements during UV curing and improve the coating quality during UV curing.

[0049] Through this embodiment, the sapphire 13 is first leveled with the leveling tool 3, and then the overall height of the sapphire 13 is slightly increased by adjusting the input voltage so that the overall height of the sapphire 13 meets SPEC (≤0.03mm), and the surface temperature of the heating plate 2 is maintained at 30 degrees Celsius to achieve ideal coating conditions, which can improve the uniformity and consistency of the film layer and reduce the occurrence of defects.

[0050] The embodiment of the present invention further provides a thin film deposition device, comprising the above-mentioned heating plate 2, wherein the heating plate 2 uses the above-mentioned leveling tool 3 to level the height of the wafer support body and the plate surface of the heating plate 2. Specifically, the wafer support body bushing and its leveling tool 3 and the heating plate 2 have been described in detail in the above-mentioned embodiment, and for the sake of brevity of the specification, they will not be repeated here.

[0051] Through this embodiment, the piezoelectric ceramic 12 can be controlled to adjust the overall height of the sapphire 13, reduce the height difference between the sapphires 13, effectively reduce the wafer temperature, reduce the local temperature difference of the wafer, control the reaction rate of UV curing, improve the uniformity, consistency and adhesion of the film layer, reduce the generation of defects, and reduce the risk of film peeling, thereby improving the quality of the coating material.

[0052] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A wafer support sleeve, characterized in that: include: A bushing, a piezoelectric ceramic and a wafer support, wherein the bushing is provided with an inner cavity, the top of the inner cavity has an opening, the piezoelectric ceramic is provided in the inner cavity, the wafer support is provided on the top surface of the piezoelectric ceramic, and the wafer support is exposed at the opening; Wherein, the piezoelectric ceramic is configured to generate deformation according to different voltages to lift the wafer support to adjust its height.

2. The wafer support sleeve according to claim 1, characterized in that: The top surface of the piezoelectric ceramic is concave to form a concave surface, and the bottom of the wafer support body is in surface contact with the concave surface.

3. The wafer support sleeve according to claim 1, characterized in that: It also includes an annular top cover, which is installed on the top of the bushing and is arranged around the periphery of the wafer support body. The inner diameter of the annular top cover is smaller than the diameter of the wafer support body.

4. The wafer support sleeve according to claim 3, characterized in that: The lower surface of the annular top cover is provided with a boss, and the top end surface of the bushing is provided with a groove; or, the lower surface of the annular top cover is provided with a groove, and the top end surface of the bushing is provided with a boss; the boss is embedded in the groove.

5. The wafer support sleeve according to claim 3, characterized in that: The upper surface of the annular top cover is provided with a first positioning through groove and a second positioning through groove along its radial direction, and the first positioning through groove is symmetrical with the second positioning through groove along the radial direction.

6. The wafer support sleeve according to claim 1, characterized in that: A wire passing hole is provided at the bottom of the bushing, the wire passing hole is communicated with the inner cavity, and the wire passing hole is used for allowing a wire to pass through and connect with the piezoelectric ceramic.

7. The wafer support sleeve according to any one of claims 1 to 6, characterized in that: The wafer support is sapphire.

8. A heating plate, characterized in that: include: A disk body and a plurality of wafer support bushings and a voltage regulator, wherein the wafer support bushing is the wafer support bushing as described in any one of claims 1 to 7, a plurality of mounting holes are opened on the disk surface of the disk body, and the plurality of wafer support bushings are respectively mounted in the plurality of mounting holes, the voltage regulator is electrically connected to the piezoelectric ceramics of the plurality of wafer support bushings, and the voltage regulator is used to adjust the input voltage of the piezoelectric ceramics.

9. A wafer support sleeve leveling tool, characterized in that: Applicable to the wafer support bushing according to any one of claims 1 to 7, the leveling tool is used to level the height difference between the wafer support and the plate surface of the heating plate, the heating plate is the heating plate according to claim 8, and the leveling tool comprises: a tool body, the lower surface of the tool body is provided with a first overlapping plane and a second overlapping plane and a positioning portion, the first overlapping plane and the second overlapping plane are in the same horizontal plane, and the positioning portion protrudes from the lower surface of the tool body; Among them, when the positioning part and the bushing are positioned together, the first overlapping plane is pressed against the disk surface of the heating disk, and the second overlapping plane is pressed against the top of the wafer support body, so that the wafer support body and the disk surface of the heating disk are at the same height.

10. A thin film deposition device, characterized in that: It comprises the heating plate as claimed in claim 8, wherein the heating plate adopts the leveling tool as claimed in claim 9 to level the height between the wafer support body and the heating plate surface.

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