Laser unit, array laser chip, and method for preparing array laser chip

Abstract

The present invention provides a laser unit, an array laser chip and a method for preparing the array laser chip, and relates to the field of laser technology. The method for preparing the array laser chip includes: generating a substrate; wherein the substrate is transparent to light within the gain spectrum band of the rare earth gain material; based on the substrate, using electron beam lithography technology, etching to obtain multiple photonic crystal microcavities; wherein, among the multiple photonic crystal microcavities, at least one photonic crystal microcavity has a resonance mode different from other photonic crystal microcavities; using micro-nano material transfer technology, the rare earth gain material is transferred to the surface of each photonic crystal microcavity, and a rare earth gain material layer is formed on the surface of each photonic crystal microcavity. The present invention can effectively utilize the optical properties of the rare earth gain material to provide a high-performance, high-stability array laser chip in the 1.5μm band.

Description

Technical Field

[0001] The present invention relates to the field of laser technology, and in particular to a laser unit, an array laser chip and a method for preparing the array laser chip. Background Art

[0002] As a key component of modern science and technology, laser technology plays a vital role in many fields such as communications, medical treatment, and industrial processing. As the core component of laser technology, the performance of laser chips is directly related to the efficiency and stability of the entire laser system.

[0003] In recent years, although two-dimensional semiconductor materials have achieved certain research results in the field of nanolasers, they still face challenges such as complex preparation processes, poor stability, and insufficient luminescence efficiency. In this context, rare earth elements, especially erbium, have attracted much attention due to their unique optical properties. Under the excitation of 980-nanometer pump light, erbium can produce efficient optical gain in the 1.5-micron band, and the luminescence is stable and has good resistance to environmental factors, opening up a new path for the development of nanolasers. However, although the preparation process of traditional erbium-doped materials is relatively simple, the optical gain is limited, resulting in a large device size, which is difficult to meet the growing demand for on-chip integration.

[0004] Therefore, how to effectively utilize the optical properties of rare earth gain materials to provide a high-performance, high-stability 1.5μm band array laser chip is a technical problem that needs to be solved urgently. Summary of the invention

[0005] In view of the above problems existing in the prior art, the present invention provides a laser unit, an array laser chip and a method for preparing the array laser chip, so as to effectively utilize the optical properties of rare earth gain materials and provide a high-performance and high-stability 1.5μm band array laser chip.

[0006] The present invention provides a laser unit, comprising:

[0007] A photonic crystal microcavity; a rare earth gain material layer coupled to the surface of the photonic crystal microcavity; wherein the resonance mode of the photonic crystal microcavity matches the target wavelength in the optical gain spectrum of the rare earth gain material layer; wherein when pump light irradiates the rare earth gain material layer, the rare earth gain material layer emits broad-spectrum fluorescence, and the fluorescence of the target wavelength in the broad-spectrum fluorescence is enhanced to generate laser light of the target wavelength under the resonance and mode selection of the photonic crystal microcavity.

[0008] The present invention provides an array laser chip, comprising:

[0009] A plurality of laser units, each of which comprises: a photonic crystal microcavity; a rare earth gain material layer coupled to the surface of the photonic crystal microcavity; wherein the resonance mode of the photonic crystal microcavity matches a preset wavelength in an optical gain spectrum of the rare earth gain material layer; wherein, among the photonic crystal microcavities included in the plurality of laser units, the resonance mode of at least one photonic crystal microcavity is different from that of the other photonic crystal microcavities; wherein, when pump light irradiates the rare earth gain material layer of any of the laser units, the rare earth gain material layer of the laser unit emits wide-spectrum fluorescence, and in the wide-spectrum fluorescence, the fluorescence of the preset wavelength that matches the resonance mode of the photonic crystal microcavity of the laser unit is enhanced to generate laser light of the preset wavelength under the resonance and mode selection of the photonic crystal microcavity of the laser unit.

[0010] According to an array laser chip provided by the present invention, the rare earth gain material layer is composed of erbium compound nanomaterials.

[0011] The present invention provides a method for preparing an array laser chip, comprising the following steps:

[0012] Generate a substrate; wherein the substrate is transparent to light within the gain spectrum band of the rare earth gain material; based on the substrate, use electron beam lithography technology to etch a plurality of photonic crystal microcavities; wherein, among the plurality of photonic crystal microcavities, at least one photonic crystal microcavity has a resonance mode different from that of other photonic crystal microcavities; use micro-nano material transfer technology to transfer the rare earth gain material to the surface of each of the photonic crystal microcavities, and form a rare earth gain material layer on the surface of each of the photonic crystal microcavities.

[0013] According to a method for preparing an array laser chip provided by the present invention, the rare earth gain material layer is composed of erbium compound nanomaterials.

[0014] According to a method for preparing an array laser chip provided by the present invention, the rare earth gain material is transferred to the surface of each photonic crystal microcavity by using micro-nano material transfer technology, and a rare earth gain material layer is formed on the surface of each photonic crystal microcavity, comprising: using dry transfer technology to transfer erbium compound nanomaterials to the surface of each photonic crystal microcavity, and forming the rare earth gain material layer on the surface of each photonic crystal microcavity.

[0015] According to a method for preparing an array laser chip provided by the present invention, the rare earth gain material layer is composed of rare earth compound nanoparticles.

[0016] According to a method for preparing an array laser chip provided by the present invention, the rare earth gain material is transferred to the surface of each photonic crystal microcavity by using micro-nano material transfer technology, and a rare earth gain material layer is formed on the surface of each photonic crystal microcavity, including: using sol-gel coating technology to transfer rare earth compound nanoparticles to the surface of each photonic crystal microcavity, and forming the rare earth gain material layer on the surface of each photonic crystal microcavity.

[0017] According to a method for preparing an array laser chip provided by the present invention, the substrate is an SOI substrate or a silicon substrate.

[0018] The present invention provides a photonic integrated device, comprising.

[0019] An array laser chip, the array laser chip comprises a plurality of laser units, the laser units comprise: a photonic crystal microcavity; a rare earth gain material layer coupled to the surface of the photonic crystal microcavity; wherein the resonance mode of the photonic crystal microcavity matches a preset wavelength in an optical gain spectrum of the rare earth gain material layer; wherein when pump light irradiates the rare earth gain material layer of any of the laser units, the rare earth gain material layer of the laser unit emits a wide-spectrum fluorescence, wherein the fluorescence of the preset wavelength matching the resonance mode of the photonic crystal microcavity of the laser unit is enhanced to generate laser of the preset wavelength under the resonance and mode selection of the photonic crystal microcavity of the laser unit; and a photonic device, wherein the photonic device is coupled to the photonic crystal microcavity.

[0020] According to a photonic integrated device provided by the present invention, the rare earth gain material layer is composed of erbium compound nanomaterials.

[0021] The array laser chip provided by the present invention comprises a plurality of laser units, each of which comprises: a photonic crystal microcavity; a rare earth gain material layer coupled to the surface of the photonic crystal microcavity, the resonance mode of the photonic crystal microcavity matches a preset wavelength in the optical gain spectrum of the rare earth gain material layer; when the pump light irradiates the rare earth gain material layer of any laser unit, the rare earth gain material layer of the laser unit emits a wide-spectrum fluorescence, in which the fluorescence of the preset wavelength matching the resonance mode of the photonic crystal microcavity of the laser unit is enhanced to produce laser of the preset wavelength under the resonance and mode selection of the photonic crystal microcavity of the laser unit. The present invention effectively improves the optical gain per unit length of the array laser chip through the efficient coupling of the rare earth gain material layer and the photonic crystal microcavity, and at the same time significantly enhances the local light field of the array laser chip. Furthermore, since the resonance mode of at least one photonic crystal microcavity in the photonic crystal microcavities included in the multiple laser units is different from that of the other photonic crystal microcavities, the multiple laser units of the array laser chip can generate lasers of multiple different wavelengths under the irradiation of pump light, making full use of the wider gain spectrum of the rare earth gain material, and providing high-gain lasers of multiple wavelengths through a smaller array laser chip. Thus, the optical properties of the rare earth gain material are effectively utilized to provide a high-performance, high-stability array laser chip in the 1.5μm band. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0023] Figure 1 It is a schematic diagram of the structure of the array laser chip provided by the present invention.

[0024] Figure 2 It is a schematic structural diagram of the laser unit provided by the present invention.

[0025] Figure 3 It is a schematic flow chart of the method for preparing the array laser chip provided by the present invention.

[0026] Figure 4 It is a schematic diagram of the processing process of the photonic crystal microcavity provided by the present invention.

[0027] Figure 5 This is a SEM photo of the photonic crystal microcavity provided by the present invention.

[0028] Figure 6 It is a schematic diagram of the process of transferring rare earth gain materials using dry transfer technology provided by the present invention.

[0029] Figure 7 is a SEM photograph of the laser unit provided by the present invention.

[0030] Figure 8 This is an optical photograph of the laser array chip provided by the present invention.

[0031] Fig. 9 This is a SEM photo of the laser array chip provided by the present invention.

[0032] Reference numerals:

[0033] 1: first laser unit; 11: first photonic crystal microcavity; 12: first rare earth gain material layer; 2: second laser unit; 21: second photonic crystal microcavity; 22: second rare earth gain material layer; 31: photonic crystal microcavity; 32: rare earth gain material layer. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] Combine the following Figure 1-Figure 2 The array laser chip of the present invention is described.

[0036] Figure 1 It is a schematic diagram of the structure of the array laser chip provided by the present invention.

[0037] The array laser chip includes multiple laser units, each of which includes:

[0038] Photonic crystal microcavity; a rare earth gain material layer coupled to the surface of the photonic crystal microcavity.

[0039] like Figure 1 As shown, the array laser chip includes a first laser unit 1, a second laser unit 2 and a plurality of laser units (only as an example, the actual array laser chip includes more laser units).

[0040] The first laser unit 1 includes a first photonic crystal microcavity 11 ; a first rare earth gain material layer 12 coupled to the surface of the first photonic crystal microcavity 11 ; the second laser unit 2 includes a second photonic crystal microcavity 21 ; a second rare earth gain material layer 22 coupled to the surface of the second photonic crystal microcavity 21 .

[0041] Photonic crystal microcavity is the process of introducing defects in photonic crystals or designing specific structures to form tiny cavities. This defect destroys the complete periodicity of the photonic crystal, thereby introducing defect state energy levels in the photonic band gap and inducing oscillations in specific areas of the photonic crystal. Light waves in photonic crystal microcavities will resonate under certain conditions, and this resonant state is called a resonant mode. The resonant mode determines the propagation characteristics of light waves in the microcavity and the intensity of interaction with matter.

[0042] Photonic crystal microcavities have the following characteristics: Photonic crystal microcavities utilize the characteristics of photonic band gaps to form strong binding and confinement capabilities for light fields, giving them a higher quality factor; the size of photonic crystal microcavities is very small, generally in the micron range, which gives them a smaller mode volume; photonic crystal microcavities also have better stability.

[0043] For the preparation process of photonic crystal microcavities, see Figure 3 The relevant content in will not be repeated here.

[0044] In a specific implementation process, the rare earth gain material layer can be composed of a variety of rare earth gain materials, for example, rare earth compound nanoparticles, erbium compound nanomaterials, etc.

[0045] In some embodiments, the rare earth gain material layer is composed of erbium compound nanomaterials.

[0046] Rare earth gain materials have excellent broadband absorption and emission characteristics and a broad gain spectrum in the 1.5µm band.

[0047] The resonant mode of the photonic crystal microcavity matches a preset wavelength in the optical gain spectrum of the rare earth gain material layer.

[0048] The preset wavelength is a wavelength selected from the gain spectrum of the rare earth gain material in the 1.5µm band according to the wavelength of the laser to be generated by the array laser chip. For example, the preset wavelength may be one of 1510nm, 1520nm or 1530nm. When the resonance mode of the photonic crystal microcavity matches the preset wavelength, the resonance of the photonic crystal microcavity will amplify the photons of the preset wavelength.

[0049] In the specific implementation process, when the pump light irradiates the rare earth gain material layer of any laser unit, the electrons in the rare earth gain material are excited to a high energy state, and emit wide-spectrum fluorescence through transitions between energy levels. In the wide-spectrum fluorescence, the fluorescence of a preset wavelength that matches the resonance mode of the photonic crystal microcavity of the laser unit is enhanced to produce laser light of a preset wavelength under the resonance and mode selection of the photonic crystal microcavity of the laser unit. Among the photonic crystal microcavities included in multiple laser units, the resonance mode of at least one photonic crystal microcavity is different from that of other photonic crystal microcavities. Therefore, the pump light can excite laser light of multiple different wavelengths from the array laser chip.

[0050] In the specific implementation process, the array laser chip provided by the present invention, which includes a photonic crystal microcavity coupled with a rare earth gain material layer, can perform off-chip input and output through a waveguide and a grating structure, thereby realizing a core active device that can be integrated on a chip, fundamentally solving the key technical challenges that urgently need to be broken through in using rare earth gain materials (for example, erbium materials) as active devices on silicon substrates in the communication band, and effectively promoting the process of device practical application.

[0051] On the other hand, the present invention further provides a laser unit, the laser unit comprising:

[0052] Photonic crystal microcavity; a rare earth gain material layer coupled to the surface of the photonic crystal microcavity.

[0053] Just as an example, Figure 2 As shown, the laser unit includes a photonic crystal microcavity 31 and a rare earth gain material layer 32 .

[0054] The resonant mode of the photonic crystal microcavity matches the target wavelength in the optical gain spectrum of the rare earth gain material layer.

[0055] When the pump light irradiates the rare earth gain material layer, the rare earth gain material layer emits broad-spectrum fluorescence, and the fluorescence of the target wavelength in the broad-spectrum fluorescence is enhanced to produce laser of the target wavelength under the resonance and mode selection of the photonic crystal microcavity. As an example only, the target wavelength can be one of the wavelengths of 1530nm, 1540nm or 1550nm in the 1.5µm band.

[0056] For a detailed description of the photonic crystal microcavity and rare earth gain material layer, see Figure 1 Related content in .

[0057] Combine the following Figure 3-Figure 9 The preparation method of the array laser chip of the present invention is described.

[0058] Figure 3 is a schematic diagram of a method for preparing an array laser chip provided by the present invention, wherein the method is used to prepare Figure 1 The array laser chip shown, Figure 3As shown, the method includes the following steps.

[0059] Step 301: Generate a substrate; wherein the substrate is transparent to light within the gain line band of the rare earth gain material.

[0060] In the specific implementation process, the substrate can be realized based on a variety of materials, for example, a SOI (Silicon-On-Insulator) substrate, a silicon substrate, or other material substrates that are transparent to light within the gain spectrum band (1.5µm band) of the rare earth gain material.

[0061] Step 302: Based on the substrate, multiple photonic crystal microcavities are etched using electron beam lithography technology.

[0062] Before processing the substrate, the resonant mode of each photonic crystal microcavity needs to be designed to match a preset wavelength in the gain spectrum of the rare earth gain material. For example, the resonant mode of the photonic crystal microcavity can be designed by determining the parameters of the photonic crystal microcavity: lattice constant, hole radius, hole depth and other parameters.

[0063] Among the multiple photonic crystal microcavities, at least one photonic crystal microcavity has a resonance mode different from other photonic crystal microcavities. For example, among the multiple photonic crystal microcavities, each photonic crystal microcavity has a different resonance mode. For another example, among the multiple photonic crystal microcavities, there is a portion of photonic crystal microcavities whose resonance modes are the same as each other but different from the resonance modes of the remaining photonic crystal microcavities.

[0064] As an example only, erbium compound nanomaterials are used to generate the rare earth gain material layer of the photonic crystal microcavity. The erbium compound nanomaterials exhibit wide-spectrum gain characteristics in the 1.5 µm band, and the gain spectrum ranges from 1500 nm to 1580 nm. In order to fully utilize the wide-spectrum gain characteristics of erbium compound nanomaterials in the 1.5 µm band, the parameters of each photonic crystal microcavity can be precisely designed to ensure that its resonant mode falls within the gain spectrum range of the 1.5 µm band, such as a series of equally spaced modes such as 1510 nm, 1520 nm, and 1530 nm. Finally, under the resonance and mode selection of the cavity mode of the photonic crystal microcavity, a laser chip with multi-wavelength laser output corresponding to the cavity mode wavelength of 1510 nm, 1520 nm, and 1530 nm can be formed.

[0065] The periodic structure of the photonic crystal microcavity can be achieved by precisely controlling the photolithography pattern and etching depth.

[0066] As an example only, the process of preparing a photonic crystal microcavity is as follows Figure 4 shown.

[0067] In step a, the substrate is cleaned. The substrate is a 220 nm SOI.

[0068] In step b, the coating and development are performed. The photoresist is spin-coated on the substrate surface to form a uniform 250nm film. The photoresist can be ZEP520A or PMMA.

[0069] PMMA and ZEP520A are both commonly used photoresists in electron beam lithography, and they have different characteristics and application scenarios. PMMA is a standard positive electron beam photoresist with high resolution and high contrast, but relatively low sensitivity; while ZEP520A is an ultra-high resolution negative electron beam photoresist with excellent etching resistance. When choosing a photoresist, you can consider it according to the specific process requirements.

[0070] In step c, EBL exposure is performed.

[0071] In step d, ICP etching is performed. Using an electron beam lithography machine, the desired photonic crystal microcavity pattern is formed on the surface of the photoresist by precisely controlling the scanning path and dose (eg, 2 nA) of the electron beam.

[0072] In step e, the exposed photoresist is immersed in a developer to remove the unexposed portion of the photoresist, thereby forming a mask pattern of the photonic crystal microcavity.

[0073] In step f, HF etching is performed. The developed substrate material is placed in a reactive ion etching device, and the portion not protected by the photoresist is removed by plasma etching, thereby etching out the periodic structure of the photonic crystal microcavity.

[0074] Finally, the etched substrate material is immersed in acetone or isopropanol to remove the remaining photoresist and ensure that the surface of the photonic crystal microcavity is flat.

[0075] The SEM (Scanning Electron Microscope) photo of the photonic crystal microcavity finally prepared is shown in the figure below. Figure 5 The photo shows the prepared photonic crystal microcavity, whose precise periodic structure, micro-nanoscale size and high symmetry ensure the uniformity and isotropy of the photonic band gap, thus achieving excellent photon propagation effect.

[0076] The present invention is based on a two-dimensional photonic crystal microcavity with a high quality factor. By precisely controlling the periodic structure and defect design of the photonic crystal microcavity, the strong localization and efficient coupling of the light field are achieved. The optimized design of the photonic crystal microcavity not only reduces the pumping threshold of the array laser chip, but also enhances the output performance of the laser.

[0077] Step 303: Using micro-nano material transfer technology, rare earth gain material is transferred to the surface of each photonic crystal microcavity to form a rare earth gain material layer on the surface of each photonic crystal microcavity.

[0078] Micro-nano material transfer technology may include but is not limited to: dry transfer technology, sol-gel coating technology, etc.

[0079] In some embodiments, the rare earth gain material layer is composed of erbium compound nanomaterials, and the erbium compound nanomaterials can be transferred to the surface of each photonic crystal microcavity using dry transfer technology to form a rare earth gain material layer on the surface of each photonic crystal microcavity, thereby achieving efficient coupling between the photonic crystal microcavity and the rare earth gain material.

[0080] In the specific implementation process, it is first necessary to generate erbium compound nanomaterials.

[0081] As an example only, for the growth of erbium compound nanomaterials, a suitable erbium compound precursor, such as erbium chloride or nitrate, is selected to synthesize erbium compound nanosheets under high temperature conditions by chemical vapor deposition. By controlling the reaction conditions, such as temperature, gas flow and reaction time, the crystal quality of the nanosheets can be regulated so that the generated erbium compound nanomaterial has the best optical properties.

[0082] The transfer of erbium compound nanomaterials is a key step in transferring them from the growth substrate to the target substrate, which directly affects the performance and stability of the final array laser chip.

[0083] The high-quality erbium compound nanomaterial with a flat surface and no defects generated above is selected as the starting material. Next, a transfer medium, such as a polydimethylsiloxane (PDMS) film, is prepared. Then, as Figure 6 As shown in the figure on the left, the PDMS film is covered on the surface of the erbium compound nanomaterial. The erbium compound nanomaterial is separated from the original growth substrate by mechanical peeling technology. Figure 6 As shown in the figure on the right, the successfully peeled erbium compound nanomaterial is directly transferred to the predetermined position of the photonic crystal microcavity. Finally, the PDMS attached to the erbium compound nanomaterial is removed by mechanical peeling to ensure that the erbium compound nanomaterial can be tightly and firmly combined with the photonic crystal microcavity as the target substrate, forming a rare earth gain material layer on the surface of the photonic crystal microcavity.

[0084] In the specific implementation process, the coupling area of ​​the rare earth gain material on the surface of the photonic crystal microcavity can be determined according to the actual application requirements.

[0085] For example, the central region of the photonic crystal microcavity can be used as a coupling region. The central region of the photonic crystal microcavity is the region with the strongest photon localization and the strongest interaction with the rare earth gain material. The central region of the photonic crystal microcavity is also the key to the formation of the photonic band gap. The photonic band gap is one of the important characteristics of the photonic crystal microcavity, which determines which frequencies of photons can propagate in the microcavity and which frequencies of photons are prohibited. Coupling the rare earth gain material in the central region can better utilize the photonic band gap characteristics and achieve precise control of photon propagation and interaction.

[0086] For another example, the side regions, defect positions, etc. of the photonic crystal microcavity can be used as coupling regions according to actual application requirements.

[0087] The optical photograph of the array laser chip obtained by the present invention is as follows: Figure 8 As shown, the SEM photo of the array laser chip is as follows Fig. 9 A laser unit in an array laser chip (e.g. Fig. 9 The SEM photograph of the laser unit 11 or the laser unit 21) is shown in FIG. Figure 7 As shown. Figure 7 , Figure 8 as well as Fig. 9 It can be seen that the array laser chip provided by the present invention has a volume of micrometer level, and has a simple structure, is easy to produce, and is easy to integrate into various small precision devices.

[0088] The present invention introduces two-dimensional erbium compound nanomaterials to realize luminescent materials with high-efficiency optical gain in the communication 1.5µm band. Compared with traditional rare earth-doped semiconductor materials, erbium compound nanomaterials have higher optical gain and narrower line width, thereby improving the optical gain per unit length of the material, thereby improving the overall performance of the array laser chip.

[0089] The present invention uses dry transfer technology to efficiently integrate two-dimensional erbium compound nanomaterials into photonic crystal microcavities. Compared with the preparation process of traditional silicon-based integrated array laser chips, the present invention simplifies complex steps such as bonding and heterogeneous growth, and realizes low-threshold silicon-based monolithic integrated lasing. This achievement provides technical support for the large-scale production of array laser chips.

[0090] In some embodiments, the rare earth gain material layer is composed of rare earth compound nanoparticles, and the rare earth compound nanoparticles can be transferred to the surface of each photonic crystal microcavity by sol-gel coating technology to form a rare earth gain material layer on the surface of each photonic crystal microcavity.

[0091] The array laser chip prepared by the above method can operate at room temperature, using rare earth gain materials to efficiently absorb lasers with wavelengths such as 980nm for excitation, and achieve lasing near 1.5µm.

[0092] On the other hand, the present invention also provides a photonic integrated device, comprising:

[0093] Array laser chip, the array laser chip includes multiple laser units, and the laser units include:

[0094] A photonic crystal microcavity; a rare earth gain material layer coupled to the surface of the photonic crystal microcavity; wherein the resonance mode of the photonic crystal microcavity matches a target preset wavelength in the optical gain spectrum of the rare earth gain material layer.

[0095] When the pump light is irradiated to the rare earth gain material layer of any laser unit, the rare earth gain material layer of the laser unit emits a wide-spectrum fluorescence, in which the fluorescence of a preset wavelength matching the resonance mode of the photonic crystal microcavity of the laser unit is enhanced to produce a laser of a preset wavelength under the resonance and mode selection of the photonic crystal microcavity of the laser unit. As an example only, the preset wavelength may be one of the wavelengths of 1530nm, 1540nm or 1550nm in the 1.5µm band.

[0096] For a detailed description of the photonic crystal microcavity and rare earth gain material layer, see Figure 1~Figure 3 The relevant content in will not be repeated here.

[0097] Photonic device, the photonic device is coupled to the photonic crystal microcavity.

[0098] Photonic devices may include, but are not limited to: waveguides, modulators, amplifiers, detectors, etc.

[0099] The photonic crystal microcavity coupled with the rare earth gain material layer provided by the present invention can obtain photonic integrated devices with different functions by coupling with different types of photonic devices.

[0100] For example, the photonic device is an optical waveguide, which is a basic element in photonic integration and is used to guide the propagation of light. After the photonic crystal microcavity is coupled and integrated with the optical waveguide, light can be coupled into the photonic crystal microcavity through the optical waveguide to achieve the resonance enhancement effect of the laser.

[0101] For another example, the photonic device is an optical amplifier, which is used to enhance the intensity of light. After the photonic crystal microcavity is integrated with the optical amplifier, the laser signal can be amplified, effectively improving the gain of the laser signal.

[0102] The photonic integrated device provided by the present invention can realize a multifunctional on-chip integrated optical circuit and has broad application prospects in the fields of optical communication, on-chip optical interconnection, sensing, quantum information, etc.

[0103] The device embodiments described above are merely illustrative, wherein the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. Ordinary technicians in this field can understand and implement it without paying creative labor.

[0104] Through the description of the above implementation methods, those skilled in the art can clearly understand that each implementation method can be implemented by means of software plus a necessary general hardware platform, and of course, can also be implemented by hardware. Based on this understanding, the above technical solution is essentially or the part that contributes to the prior art can be embodied in the form of a software product, and the computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, a disk, an optical disk, etc., including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0105] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A laser unit, characterized in that: include: Photonic crystal microcavity; A rare earth gain material layer coupled to the surface of the photonic crystal microcavity; Wherein, the resonance mode of the photonic crystal microcavity matches the target wavelength in the optical gain spectrum of the rare earth gain material layer; wherein the target wavelength is in the 1.5µm band; When the pump light irradiates the rare earth gain material layer, the rare earth gain material layer emits broad-spectrum fluorescence, and the fluorescence of the target wavelength in the broad-spectrum fluorescence is enhanced to generate laser of the target wavelength under the resonance and mode selection of the photonic crystal microcavity.

2. An array laser chip, characterized in that: include: A plurality of laser units, each of the laser units comprising: Photonic crystal microcavity; A rare earth gain material layer coupled to the surface of the photonic crystal microcavity; wherein the resonance mode of the photonic crystal microcavity matches a preset wavelength in the optical gain spectrum of the rare earth gain material layer; wherein the preset wavelength is in the 1.5µm band; Among the photonic crystal microcavities included in the plurality of laser units, at least one photonic crystal microcavity has a resonance mode different from that of the other photonic crystal microcavities; When the pump light is irradiated to the rare earth gain material layer of any of the laser units, the rare earth gain material layer of the laser unit emits a wide-spectrum fluorescence, in which the fluorescence of a preset wavelength matching the resonance mode of the photonic crystal microcavity of the laser unit is enhanced to produce laser of the preset wavelength under the resonance and mode selection of the photonic crystal microcavity of the laser unit.

3. The array laser chip according to claim 2, characterized in that: The rare earth gain material layer is composed of erbium compound nanomaterials.

4. A method for preparing an array laser chip, characterized in that: The method is used to manufacture the array laser chip as claimed in claim 2, and the method comprises: Generating a substrate; wherein the substrate is transparent to light within the gain line band of the rare earth gain material; Based on the substrate, multiple photonic crystal microcavities are etched by using electron beam lithography technology; wherein, among the multiple photonic crystal microcavities, the resonance mode of at least one photonic crystal microcavity is different from that of other photonic crystal microcavities; The rare earth gain material is transferred to the surface of each photonic crystal microcavity by using micro-nano material transfer technology, so that a rare earth gain material layer is formed on the surface of each photonic crystal microcavity.

5. The method for preparing an array laser chip according to claim 4, characterized in that: The rare earth gain material layer is composed of erbium compound nanomaterials.

6. The method for preparing an array laser chip according to claim 5, characterized in that: The method of transferring the rare earth gain material to the surface of each photonic crystal microcavity by using the micro-nano material transfer technology to form a rare earth gain material layer on the surface of each photonic crystal microcavity includes: The erbium compound nanomaterial is transferred to the surface of each photonic crystal microcavity by using dry transfer technology, and the rare earth gain material layer is formed on the surface of each photonic crystal microcavity.

7. The method for preparing an array laser chip according to claim 4, characterized in that: The rare earth gain material layer is composed of rare earth compound nanoparticles.

8. The method for preparing an array laser chip according to claim 7, characterized in that: The method of transferring the rare earth gain material to the surface of each photonic crystal microcavity by using the micro-nano material transfer technology to form a rare earth gain material layer on the surface of each photonic crystal microcavity includes: The rare earth compound nanoparticles are transferred to the surface of each photonic crystal microcavity by using sol-gel coating technology, and the rare earth gain material layer is formed on the surface of each photonic crystal microcavity.

9. A photonic integrated device, characterized in that: include: An array laser chip, wherein the array laser chip comprises a plurality of laser units, wherein the laser units comprise: Photonic crystal microcavity; A rare earth gain material layer coupled to the surface of the photonic crystal microcavity; Wherein, the resonance mode of the photonic crystal microcavity matches a preset wavelength in the optical gain spectrum of the rare earth gain material layer; wherein the preset wavelength is in the 1.5µm band; When the pump light irradiates the rare earth gain material layer of any of the laser units, the rare earth gain material layer of the laser unit emits a wide-spectrum fluorescence, in which the fluorescence of a preset wavelength matching the resonance mode of the photonic crystal microcavity of the laser unit is enhanced to generate laser light of the preset wavelength under the resonance and mode selection of the photonic crystal microcavity of the laser unit; A photonic device is coupled to the photonic crystal microcavity.

10. The photonic integrated device according to claim 9, characterized in that: The rare earth gain material layer is composed of erbium compound nanomaterials.

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