A memristor with high switching ratio and low off-state current density and a method for preparing the same

By setting regions with higher and lower resistance states in ReRAM, and introducing gold nanoparticles into conductive channels by electrostatic self-assembly, the problem of traditional ReRAM dependence on the intrinsic characteristics of resistive material is solved, and the effect of high switching ratio and low switching current density is achieved.

CN119677371BActive Publication Date: 2025-05-02SUZHOU UNIV
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Patent Information

Application Number
CN202510186408.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-02-20
Publication Date
2025-05-02
Estimated Expiration
2045-02-20

AI Technical Summary

Technical Problem

While pursuing high switching ratios and low switching current density, traditional resistive random access memory (ReRAM) is difficult to break through the dependence on the intrinsic characteristics of resistive variable materials, resulting in limited device performance.

Method used

By setting two regions with higher and lower resistance states in the intermediate resistive material, and introducing gold nanoparticles using electrostatic self-assembly method, the formation of conductive channels in the regions with lower resistance states is induced, thereby achieving a high switching ratio and low switching state current density.

Benefits of technology

A high switching ratio (>107) and a low switching current density (<10-9 A/cm2) are achieved, and a stable transition between high and low resistance states is achieved, with long-term retention characteristics and good process repeatability.

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Abstract

The present invention belongs to the field of memristors, and discloses a memristor with a high switching ratio and a low off-state current density and a preparation method thereof, wherein the preparation method comprises the following steps: soaking an ITO substrate after surface hydroxylation in an ethanol solution of 3-aminopropyltriethoxysilane, so that the surface of the ITO substrate is modified with 3-aminopropyltriethoxysilane molecules, and an ITO substrate with a positive surface charge is obtained; soaking the ITO substrate with a positive surface charge in a gold nanoparticle colloidal solution, and obtaining a substrate assembled with gold nanoparticles; spin-coating polymethyl methacrylate on the surface of the substrate assembled with gold nanoparticles, baking to dryness, and then plating an aluminum film to obtain a memristor with a high switching ratio and a low off-state current density. The memristor of the present invention has both an ultra-high switching ratio and an ultra-low off-state current density, and the device can stably switch between high resistance and low resistance states, and has a long-term retention characteristic and good process repeatability.
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Citation Information

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