Rapid test system and method for change ratio of voltage responsivity of PIN-FET detector

Abstract

The invention belongs to the technical field of photoelectric detection, and particularly relates to a PIN-FET detector voltage responsivity change ratio rapid test system and method, and the system comprises a microcontroller system board, a TEC temperature screening table, a temperature sensor, a light source and a power supply. The microcontroller system board is connected with the PIN-FET detector and the temperature sensor; the PIN-FET detector is arranged on the TEC temperature screening table; the PIN-FET detector is connected with the light source; the temperature sensor is used for acquiring the temperature of the PIN-FET detector and the temperature of the TEC temperature screening table; and the power supply is connected with the microcontroller system board and the PIN-FET detector. Compared with the prior art, the system and the method have the advantages that the problem of lack of a system and a method for testing the voltage responsivity change ratio of a single or a small number of PIN-FET detectors in the prior art is solved, and the voltage responsivity change ratio of the single or the small number of PIN-FET detectors is tested.

Description

Technical Field

[0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a fast testing system and method for a voltage response variation ratio of a PIN-FET detector. Background Art

[0002] The voltage responsivity of a PIN-FET detector is essentially the parameter of the "current responsivity" parameter of the PIN photodiode in the PIN-FET detector after being processed by the internal circuit of the PIN-FET detector. Therefore, the voltage responsivity of a PIN-FET detector is also one of the important parameters that reflect the photoelectric conversion efficiency. The voltage responsivity change ratio is an important parameter that further describes the photoelectric conversion efficiency and can intuitively show the processing performance of the PIN-FET detector.

[0003] The current method for voltage response change ratio testing is generally to use a temperature chamber and multi-channel test equipment for batch testing. It is very efficient for batch product testing and is suitable for mass production. Most of the time is spent on the temperature change and insulation stage of the temperature chamber. However, in the case of a small number of devices that need to be tested quickly, this solution will cause a huge waste of manpower and material resources. For example, in the early stages of research and development, rapid iterative verification, testing of semi-finished products before airtightness, and random inspections before finished products are shipped, most of them are performance tests of small numbers. At the same time, when testing voltage response, process application, queuing testing, test waiting, etc. will greatly prolong the time to get the results, and even borrowing a whole set of test equipment will delay the progress of device production.

[0004] Therefore, it is necessary to establish a system and method for quickly testing PIN-FET detectors. Summary of the invention

[0005] The purpose of the present invention is to provide a rapid testing system and method for the voltage response change ratio of a PIN-FET detector in order to solve at least one of the above-mentioned problems, so as to address the lack of a system and method for testing the voltage response change ratio of a single or a small number of PIN-FET detectors in the prior art. The present solution realizes the voltage response change ratio test of a single or a small number of PIN-FET detectors.

[0006] The purpose of the present invention is achieved through the following technical solutions:

[0007] The first aspect of the present invention discloses a rapid test system for a voltage response change ratio of a PIN-FET detector, which is used to test the voltage response change of the PIN-FET detector, wherein the rapid test system comprises a microcontroller system board, a TEC temperature screening station, a temperature sensor, a light source and a power supply;

[0008] The microcontroller system board is connected to the PIN-FET detector and the temperature sensor respectively to obtain the output signals of the PIN-FET detector and the temperature sensor;

[0009] The PIN-FET detector is arranged on a TEC temperature screening platform, and the temperature state of the PIN-FET detector is changed by the TEC temperature screening platform; and the PIN-FET detector is connected to a light source, and the light receiving state of the PIN-FET detector is changed by the light source;

[0010] The temperature sensors are used to obtain the temperature of the PIN-FET detector and the temperature of the TEC temperature screening platform respectively;

[0011] The power supply is connected to the microcontroller system board and the PIN-FET detector respectively.

[0012] Preferably, the microcontroller system board comprises a microcontroller chip and a human-computer interaction component, and the microcontroller chip is connected to the human-computer interaction component, the temperature sensor and the PIN-FET detector.

[0013] Preferably, the microcontroller system board further includes an ADC module, and the ADC module is connected between the microcontroller chip and the PIN-FET detector.

[0014] Preferably, the TEC temperature screening platform further comprises a thermally conductive pad, and the thermally conductive pad is arranged between the TEC temperature screening platform and the PIN-FET detector.

[0015] Preferably, the temperature sensor for obtaining the temperature of the TEC temperature screening station is arranged on the thermal pad.

[0016] Preferably, the rapid testing system further comprises an adapter board, the adapter board is arranged on the TEC temperature screening table, the PIN-FET detector is mounted on the adapter board, and is used to lead out the pins of the PIN-FET detector through the connector of the adapter board.

[0017] Preferably, the PIN-FET detector is connected to the light source via a detector pigtail.

[0018] The second aspect of the present invention discloses a rapid testing method for the voltage response change ratio of a PIN-FET detector, using any of the rapid testing systems described above;

[0019] The method comprises the following steps:

[0020] S1: Connect the PIN-FET detector to the light source and set the temperature sensor, then turn on the light source and power supply;

[0021] S2: Place the PIN-FET detector on the TEC temperature screening table;

[0022] S3: Turn on the microcontroller system board and the TEC temperature screening platform respectively, adjust the TEC temperature screening platform to a first set temperature, and obtain the temperature of the PIN-FET detector through the microcontroller system board;

[0023] S4: When the temperature of the PIN-FET detector reaches the first target temperature, collecting first light output data;

[0024] S5: Turn off the light source and collect the first light-free output data;

[0025] S6: adjusting the TEC temperature screening table to a second set temperature and turning on the light source, and collecting second light output data when the temperature of the PIN-FET detector reaches the second target temperature;

[0026] S7: Turn off the light source and collect the second light-free output data;

[0027] S8: Calculate the voltage response change ratio.

[0028] Preferably, the voltage response change ratio is calculated by the following formula:

[0029]

[0030] Where:

[0031] ΔRe is the voltage response change ratio; Re 2 Re is the voltage response at the first target temperature; 1 is the voltage response at the second target temperature.

[0032] Preferably, the voltage responsiveness is calculated by the following formula:

[0033]

[0034] Where:

[0035] Re is the voltage response; V 1 is the output voltage when there is no light; V 2 is the output voltage when there is light; Φ e is the power of the input light.

[0036] Compared with the prior art, the present invention has the following beneficial effects:

[0037] A microcontroller system board is used to control and execute the test process. Based on the coordination of multi-channel temperature monitoring, ADC module and other structures, the TEC temperature screening table is used to heat and cool the PIN-FET detector, thereby realizing rapid testing of the high and low temperature performance of the PIN-FET detector. The method is simple and the implementation cost is low. The temperature screening table based on TEC semiconductors can achieve faster temperature changes and greatly shorten the test time.

[0038] The system and method can take into account the testing of single, small and large numbers of PIN-FET detectors, and the testing is convenient, the temperature can be quickly increased and decreased, and rapid measurement can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 It is a structural schematic diagram of a rapid testing system for the voltage response variation ratio of a PIN-FET detector of the present invention.

[0040] Figure 2 The figure is a flow chart of a method for quickly testing the voltage response variation ratio of a PIN-FET detector according to the present invention.

[0041] Figure 3 It is a schematic diagram showing the output of the module.

[0042] In the figure: 1-microcontroller system board; 2-microcontroller chip; 3-ADC module; 4-display module; 5-first button; 6-second button; 7-third button; 8-TEC temperature screening table temperature sensor; 9-PIN-FET detector temperature sensor; 10-TEC temperature screening table; 11-thermal pad; 12-adapter board; 13-PIN-FET detector; 14-detector pigtail; 15-light source; 16-power supply. DETAILED DESCRIPTION

[0043] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments.

[0044] As described below, all matters not described in detail may adopt commercially available products or existing technologies.

[0045] Example

[0046] like Figure 1-3 As shown, a fast test system for the voltage response change ratio of a PIN-FET detector is used to test the voltage response change of a PIN-FET detector 13, and the fast test system includes a microcontroller system board 1, a TEC temperature screening station 10, a temperature sensor, a light source 15 and a power supply 16;

[0047] The microcontroller system board 1 is connected to the PIN-FET detector 13 and the temperature sensor respectively, and is used to obtain the output signals of the PIN-FET detector 13 and the temperature sensor;

[0048] The PIN-FET detector 13 is arranged on the TEC temperature screening platform 10, and the temperature state of the PIN-FET detector 13 is changed by the TEC temperature screening platform 10; and the PIN-FET detector 13 is connected to the light source 15, and the light receiving state of the PIN-FET detector 13 is changed by the light source 15;

[0049] The temperature sensors are used to obtain the temperature of the PIN-FET detector 13 and the temperature of the TEC temperature screening station 10 respectively;

[0050] The power supply 16 is connected to the microcontroller system board 1 and the PIN-FET detector 13 respectively.

[0051] A rapid testing method for the voltage response change ratio of a PIN-FET detector 13, using the above-mentioned rapid testing system;

[0052] The method comprises the following steps:

[0053] S1: Connect the PIN-FET detector 13 to the light source 15 and set a temperature sensor, then turn on the light source 15 and the power supply 16;

[0054] S2: placing the PIN-FET detector 13 on the TEC temperature screening platform 10;

[0055] S3: Turn on the microcontroller system board 1 and the TEC temperature screening platform 10 respectively, adjust the TEC temperature screening platform 10 to a first set temperature, and obtain the temperature of the PIN-FET detector 13 through the microcontroller system board 1;

[0056] S4: When the temperature of the PIN-FET detector 13 reaches the first target temperature, collecting first light output data;

[0057] S5: Turn off the light source 15 and collect first light-free output data;

[0058] S6: adjusting the TEC temperature screening station 10 to a second set temperature and turning on the light source 15, and collecting second light output data when the temperature of the PIN-FET detector 13 reaches the second target temperature;

[0059] S7: Turn off the light source 15 and collect the second light-free output data;

[0060] S8: Calculate the voltage response change ratio.

[0061] More specifically, in this embodiment:

[0062] Figure 1 This is a structural diagram of a rapid test system for the voltage response change ratio of a PIN-FET detector 13. The overall structure of this embodiment consists of a microcontroller system board 1, a TEC temperature screening platform 10, a thermal pad 11, an adapter board 12, a DC regulated power supply 16 and a light source 15, wherein the microcontroller system board 1 is further composed of a microcontroller chip 2, an ADC module 3, a display module 4, a first button 5, a second button 6, a third button 7, a TEC temperature screening platform temperature sensor 8 and a PIN-FET detector temperature sensor 9.

[0063] The microcontroller system board 1 is mainly responsible for the collection, processing, and result output of the output voltage of the PIN-FET detector 13. The microcontroller chip 2 and the ADC module 3 are the main parts for realizing data collection and processing, wherein the sampling lead of the ADC module 3 needs to be connected to the output pin of the PIN-FET detector 13, or the sampling lead of the ADC module 3 can also be connected to the output pin of the PIN-FET detector 13 led out by the adapter socket on the adapter board 12. The ADC module 3 preferably adopts a high-precision ADC module 3, such as the CS1242 series of Xinhai Technology, the CBM76AD06 series of Xinbai Microelectronics, and other chips and peripheral circuits.

[0064] The first button 5, the second button 6, the third button 7 and the display module 4 are all human-computer interaction components, which are the main ways of human-computer interaction. Through the three buttons, a trigger signal can be given to the microcontroller chip 2 at different stages of the test. After receiving the trigger signal, the microcontroller chip 2 performs corresponding set actions, such as collecting and outputting data, calculating and outputting data, etc., to output the results to the display module 4 for the operator to view. Figure 2 , Figure 3 The button includes but is not limited to a mechanical button, a touch button, a touch screen button, and similar switches or sensors with a trigger function.

[0065] The signal output leads of the TEC temperature screening station temperature sensor 8 and the PIN-FET detector temperature sensor 9 are connected to the pins of the microcontroller chip 2, and the microcontroller chip 2 processes and converts the signal, and outputs the temperature result to the display module 4. The TEC temperature screening station temperature sensor 8 is responsible for collecting the real-time temperature of the TEC temperature screening station 10, and the PIN-FET detector temperature sensor 9 is responsible for collecting the real-time temperature of the shell of the PIN-FET detector 13. The TEC temperature screening station 10 is a semiconductor refrigeration and heating device based on the Peltier effect, which is used to achieve rapid temperature changes. It is responsible for regulating the temperature during the test process, and then controlling the temperature of the PIN-FET detector 13. The adapter board 12 is used to lead out all the effective pins of the PIN-FET detector 13, which is convenient for power supply connection and output voltage signal collection. The thermal pad 11 is used to increase the thermal conductivity. The DC regulated power supply 16 is responsible for supplying power to the microcontroller system board 1, and supplies power to the PIN-FET detector 13 through the adapter board 12. The detector pigtail 14 connects the PIN-FET detector 13 to the light source 15.

[0066] Further Figure 1 As shown, the microcontroller chip 2, the ADC module 3, the display module 4, the first button 5, the second button 6, and the third button 7 are all integrated on the microcontroller system board 1, and the microcontroller chip 2 is electrically connected to the ADC module 3, the display module 4, the first button 5, the second button 6, the third button 7, the PIN-FET detector 13, the TEC temperature screening station temperature sensor 8, and the PIN-FET detector temperature sensor 9 to exchange electrical signals. The PIN-FET detector 13 is installed on the adapter board 12 and placed on the heat exchange surface of the TEC temperature screening station 10 to control the temperature of the PIN-FET detector 13 through the TEC temperature screening station 10; and a layer of thermal pad 11 is also provided between the adapter board 12 and the TEC temperature screening station 10 to accelerate heat transfer and heat exchange. The TEC temperature screening station temperature sensor 8 is provided on the thermal pad 11, and the PIN-FET detector temperature sensor 9 is provided on the surface of the PIN-FET detector 13. The PIN-FET detector 13 is also connected to the light source 15 through the detector pigtail 14. The power supply 16 is electrically connected to the microcontroller system board 1 and the adapter board 12 to supply power to each electrical component.

[0067] The voltage response ratio rapid test method of the PIN-FET detector 13 used in this embodiment is as follows: Figure 1 , 2 As shown:

[0068] 1) Install the PIN-FET detector 13 on the adapter board 12, connect the detector pigtail 14 to the light source 15 and turn on the light source 15, attach the PIN-FET detector temperature sensor 9 to the side of the PIN-FET detector 13, and turn on the DC regulated power supply 16;

[0069] 2) placing the adapter plate 12 on the thermal pad 11 of the TEC temperature screening platform 10, so that the bottom of the adapter plate 12 is close to the thermal pad 11 and fixed;

[0070] 3) Turn on the microcontroller system board 1 and the TEC temperature screening station 10, and wait for initialization to be completed;

[0071] 4) Setting the TEC temperature screening platform 10 to a low temperature (a first set temperature), and fixing the TEC temperature screening platform temperature sensor 8 on the thermal pad 11 of the TEC temperature screening platform 10;

[0072] 5) After the temperature of the PIN-FET detector 13 displayed on the display module 4 reaches the specified temperature (first target temperature), press the first button 5 to collect the low-temperature light output (first light output data);

[0073] 6) Turn off the light source 15, press the first button 5, and collect low-temperature no-light output (first no-light output data);

[0074] 7) Turn on the light source 15 and set the TEC temperature screening station 10 to a high temperature (a second set temperature);

[0075] 8) After the display module 4 displays that the temperature of the PIN-FET detector 13 reaches the specified temperature (the second target temperature), press the second button 6 to collect the high-temperature light output (the second light output data);

[0076] 9) Turn off the light source 15, press the second button 6, and collect the high-temperature no-light output (the second no-light output data);

[0077] 10) Press the third button 7, and the voltage response change ratio calculation result will be displayed on the display module 4;

[0078] 11) Press the third button 7 again to reset the parameters and the test ends.

[0079] More specific instructions:

[0080] Install the PIN-FET detector 13 on the adapter board 12, connect the pigtail of the PIN-FET detector 13 to the light source 15 and turn on the light source 15, attach the PIN-FET detector temperature sensor 9 to the side of the PIN-FET detector 13, and turn on the DC regulated power supply 16. Place the adapter board 12 on the thermal pad 11 of the TEC temperature screening station 10, so that the bottom of the adapter board 12 is close to the thermal pad 11 and positioned. Turn on the microcontroller system board 1 and the TEC temperature screening station 10, and wait for the initialization to be completed.

[0081] The TEC temperature screening station 10 is set to a low temperature (a first set temperature), and the TEC temperature screening station temperature sensor 8 is fixed on the thermal pad 11 of the TEC temperature screening station 10. After the real-time temperature of the PIN-FET detector 13 displayed on the display module 4 reaches the specified temperature (a first target temperature), the first button 5 is pressed to collect the low-temperature light output (the first light output data); the light source 15 is turned off, and the first button 5 is pressed to collect the low-temperature lightless output (the first lightless output data).

[0082] Turn on the light source 15 and set the TEC temperature screening station 10 to a high temperature (a second set temperature). After the display module 4 shows that the temperature of the PIN-FET detector 13 reaches the specified temperature (a second target temperature), press the second button 6 to collect high-temperature light output (a second light output data); turn off the light source 15, press the second button 6, and collect high-temperature light-free output (a second light-free output data). Press the third button 7, and wait for the display module 4 to display the voltage response change ratio calculation result. Press the third button 7 again to reset the parameters, and the test ends.

[0083] There may be a certain numerical difference between the first set temperature and the first target temperature, and between the second set temperature and the second target temperature, so as to fully consider the heat exchange loss and heat dissipation. The specific numerical value should be determined according to the reagent test requirements and the test process.

[0084] The voltage response change ratio is calculated by the following formula:

[0085]

[0086] Where:

[0087] ΔRe is the voltage response change ratio, %; Re 2 is the voltage response at the first target temperature (low temperature), V / W; Re 1 is the voltage response at the second target temperature (high temperature), V / W;

[0088] The voltage responsivity is calculated by the following formula:

[0089]

[0090] Where:

[0091] Re is the voltage response; V 1 is the output voltage of the PIN-FET detector 13 when there is no light; V 2 is the output voltage of the PIN-FET detector 13 when there is light; Φ e is the power of the input light from the light source 15 .

[0092] The above-mentioned "high temperature" and "low temperature" only refer to the maximum and minimum temperatures within a test temperature range. It is a relative value, that is, "high temperature" refers to the maximum value within the temperature range, and "low temperature" refers to the minimum value within the temperature range. The specific value is determined according to the test needs.

[0093] In the specific implementation of this embodiment:

[0094] The selected microcontroller chip 2 can be a chip with an ADC module 3 for signal acquisition of each temperature sensor. If it is used for acquisition of the output signal of the PIN-FET detector 13, it is recommended that the ADC module 3 integrated in the microcontroller chip 2 is 12 bits or above, and the setting of the ADC module 3 outside the microcontroller chip 2 can be omitted. The purpose of the display module 4 is to enable the user to better understand the system operation status and output test results. Its size can be determined according to specific needs, and its display content can be referred to Figure 3 , including but not limited to device real-time output, low-temperature lightless output, low-temperature light output, high-temperature lightless output, high-temperature light output, voltage response change ratio, device temperature, screening table temperature, etc. The first button 5, the second button 6, and the third button 7 are provided to better understand the program functions, and can be physical buttons or virtual buttons; the three buttons correspond to different operation steps, and can be designed to complete different signal feedbacks through short press, long press, double press, etc. of a button as needed. The button can also be replaced by other types of buttons or switches, touch modules, touch display modules 4, etc.

[0095] The PIN-FET detector temperature sensor 9 and the TEC temperature screening platform temperature sensor 8 can be of NTC thermistor, metal platinum resistor, etc., or digital temperature sensor; when using NTC thermistor or metal platinum resistor, the ADC function of the microcontroller chip 2 must be used in conjunction, while this is not necessary when using a digital temperature sensor.

[0096] The adapter board 12 leads the pins of the PIN-FET detector 13 through the connector lead of the PCB circuit board in the adapter board 12 to connect the power supply and signal output. Vias and pads can be designed on the PCB circuit board to improve the thermal conductivity efficiency. In addition, when designing the circuit and structure of the adapter board 12, components should be placed on the top layer as much as possible so that the bottom layer can be close to the thermal pad 11. In addition, due to the use of the adapter board 12, multiple PIN-FET detectors 13 can be easily tested simultaneously using the system.

[0097] The thermal pad 11 can be made of a softer material so that after being placed on the TEC temperature screening platform 10 and the adapter plate 12 is placed on the thermal pad 11 , the TEC temperature screening platform 10 and the adapter plate 12 can be more easily attached to each other.

[0098] The TEC temperature screening station 10 uses equipment with different powers and different temperature differences according to actual needs, and in actual use, the TEC temperature screening station 10 needs to be well insulated and heat-insulated, such as installing a heat preservation cover on the TEC temperature screening station 10 to reduce the impact of the environment on the cooling and heating effects. If the selected TEC temperature screening station 10 has a communication interface and a communication module (such as a Bluetooth module, an NFC module, a WiFi module, etc.), a communication chip corresponding to the communication protocol can also be added to the microcontroller system board 1, and then the temperature of the TEC temperature screening station 10 can be directly controlled by the microcontroller system board 1.

[0099] It is recommended that the power supply 16 should preferably be powered by a DC regulated power supply 16 with smaller ripple and noise, otherwise it may affect the acquisition accuracy of the ADC module 3. Furthermore, a desktop DC regulated power supply 16 with more than three channels can be selected, or the power supply 16 function can be integrated into the microcontroller system board 1.

[0100] The light source 15 is a light source 15 with adjustable optical power, or a common light source 15 plus an optical attenuator can be used; the wavelength of the light source 15 needs to match the responsive wavelength band of the PIN-FET detector 13 .

[0101] The detector pigtail 14 can be connected to the light source 15 through fiber optic jumper fusion or adapter. The detector pigtail 14 and the light source 15 can also be connected using a mechanical optical switch. In this case, the control pin of the mechanical optical switch is connected to the microcontroller chip, and the on-off of the mechanical optical switch is controlled by a program to adjust the on-off of the input PIN-FET detector 13 light. In combination with controlling the temperature of the TEC temperature screening station 10, the voltage response of the PIN-FET detector 13 can be automatically tested.

[0102] In summary, a rapid test system and method for the voltage response change ratio of a PIN-FET detector 13 of the present invention is suitable for the research and development test, semi-finished product inspection and finished product sampling of the PIN-FET detector 13 product. The method uses a microcontroller system board 1 for control, and uses a TEC temperature screening station 10 to heat and cool the PIN-FET detector 13 to achieve a rapid test of the voltage response change ratio of the PIN-FET detector 13. Specifically: the detector pigtail 14 of the PIN-FET detector 13 is connected to the light source 15, and the PIN-FET detector 13 is connected to the test board. After power-on, the output voltage of the PIN-FET detector 13, the shell temperature of the PIN-FET detector 13, the temperature of the TEC temperature screening station 10 and other parameters can be seen on the display module 4. Place the adapter plate 12 on the thermal pad 11 of the TEC temperature screening station 10, so that the bottom of the adapter plate 12 is close to the thermal pad 11, and the test process can be started. The advantage of the present invention is that it realizes the rapid test of the voltage response change ratio of the PIN-FET detector 13, the implementation method is simple and the implementation cost is low, and the test time is greatly shortened.

[0103] The above description of the embodiments is to facilitate the understanding and use of the invention by those skilled in the art. It is obvious that those skilled in the art can easily make various modifications to these embodiments and apply the general principles described herein to other embodiments without creative work. Therefore, the present invention is not limited to the above embodiments, and improvements and modifications made by those skilled in the art based on the disclosure of the present invention without departing from the scope of the present invention should be within the scope of protection of the present invention.

Claims

1. A fast test system for the voltage response change ratio of a PIN-FET detector, characterized in that: Used to test the voltage response change of a PIN-FET detector (13), the rapid testing system comprises a microcontroller system board (1), a TEC temperature screening platform (10), a temperature sensor, a light source (15) and a power supply (16); The microcontroller system board (1) is connected to the PIN-FET detector (13) and the temperature sensor respectively, and is used to obtain output signals of the PIN-FET detector (13) and the temperature sensor; The PIN-FET detector (13) is arranged on a TEC temperature screening platform (10), and the temperature state of the PIN-FET detector (13) is changed by the TEC temperature screening platform (10); and the PIN-FET detector (13) is connected to a light source (15), and the light receiving state of the PIN-FET detector (13) is changed by the light source (15); The temperature sensors are used to obtain the temperature of the PIN-FET detector (13) and the temperature of the TEC temperature screening platform (10) respectively; The power supply (16) is connected to the microcontroller system board (1) and the PIN-FET detector (13) respectively.

2. A fast test system for voltage response change ratio of a PIN-FET detector according to claim 1, characterized in that: The microcontroller system board (1) comprises a microcontroller chip (2) and a human-machine interaction component, and the microcontroller chip (2) is connected to the human-machine interaction component, a temperature sensor and a PIN-FET detector (13).

3. A fast test system for voltage response change ratio of a PIN-FET detector according to claim 2, characterized in that: The microcontroller system board (1) further comprises an ADC module (3), wherein the ADC module (3) is connected between the microcontroller chip (2) and the PIN-FET detector (13).

4. A fast test system for voltage response change ratio of a PIN-FET detector according to claim 1, characterized in that: The TEC temperature screening platform (10) further comprises a thermally conductive pad (11), wherein the thermally conductive pad (11) is arranged between the TEC temperature screening platform (10) and the PIN-FET detector (13).

5. A fast test system for the voltage response change ratio of a PIN-FET detector according to claim 4, characterized in that: The temperature sensor for obtaining the temperature of the TEC temperature screening platform (10) is arranged on the thermal conductive pad (11).

6. A fast test system for voltage response change ratio of a PIN-FET detector according to claim 1, characterized in that: The rapid testing system further comprises an adapter board (12), wherein the adapter board (12) is arranged on the TEC temperature screening platform (10), and the PIN-FET detector (13) is installed on the adapter board (12) for leading out the pins of the PIN-FET detector (13) through the connector of the adapter board (12).

7. A fast testing system for voltage response change ratio of a PIN-FET detector according to claim 1, characterized in that: The PIN-FET detector (13) is connected to the light source (15) via a detector pigtail (14).

8. A method for quickly testing the voltage response change ratio of a PIN-FET detector, characterized in that: Using the rapid testing system as described in any one of claims 1 to 7; The method comprises the following steps: S1: Connect the PIN-FET detector (13) to the light source (15), set a temperature sensor, and then turn on the light source (15) and the power supply (16); S2: placing the PIN-FET detector (13) on the TEC temperature screening platform (10); S3: respectively turning on the microcontroller system board (1) and the TEC temperature screening platform (10), adjusting the TEC temperature screening platform (10) to a first set temperature, and obtaining the temperature of the PIN-FET detector (13) through the microcontroller system board (1); S4: when the temperature of the PIN-FET detector (13) reaches a first target temperature, collecting first light output data; S5: Turn off the light source (15) and collect first light-free output data; S6: adjusting the TEC temperature screening platform (10) to a second set temperature and turning on the light source (15), and collecting second light output data when the temperature of the PIN-FET detector (13) reaches a second target temperature; S7: Turn off the light source (15) and collect the second light-free output data; S8: Calculate the voltage response change ratio.

9. A method for rapidly testing the voltage response change ratio of a PIN-FET detector according to claim 8, characterized in that: The voltage response change ratio is calculated by the following formula: Where: ΔRe is the voltage response change ratio; Re2 is the voltage response at the first target temperature; Re1 is the voltage response at the second target temperature.

10. A method for rapidly testing the voltage response change ratio of a PIN-FET detector according to claim 9, characterized in that: The voltage responsivity is calculated by the following formula: Where: Re is the voltage response; V1 is the output voltage when there is no light; V2 is the output voltage when there is light; Φ e is the power of the input light.

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