TWS earphone

Abstract

The invention provides a TWS earphone. The TWS earphone comprises: a housing, wherein a substrate is arranged in the housing; a first crystal device and an adapter plate are arranged on the surface of one side of the substrate in parallel, and the adapter plate comprises a first grounding bonding pad; the first grounding bonding pad is arranged on the surface, facing the substrate, of the adapter plate, and the adapter plate is electrically connected with the substrate through the first grounding bonding pad so that the adapter plate can be grounded; a first part of a first plastic package layer is arranged on the surface of the first crystal device, a second part of the first plastic package layer is arranged between the adapter plate and the substrate, and the first part and the second part are of an integrated structure; the surface of the first part is covered with first shielding metal, and the first shielding metal is electrically connected with the first grounding bonding pad so that the first shielding metal can be grounded. According to the technical scheme, on the premise that the layout space is not increased, mutual shielding between components can be achieved, other components do not need to be added, the process is simple, and the integration degree is high.

Description

[0001] This application is a divisional application. The application number of the original application is 202110968469.4, and the original application date is August 23, 2021. The entire contents of the original application are incorporated into this application by reference. Technical Field

[0002] The present application relates to the field of chip packaging, and in particular to an electronic device and a chip packaging method. Background Art

[0003] Electronic devices have been developing in a trend of miniaturization. At present, there are small-sized smart watches, smart bracelets, and wireless headphones. As the size of electronic devices gradually decreases and their functions gradually diversify, the number of components used to realize the functions also gradually increases, which also leads to the density of components in electronic devices gradually increasing. Therefore, higher requirements are put forward for the packaging process of electronic devices.

[0004] For electronic devices with Bluetooth, WiFi or other data transmission capabilities, see, for example, Figure 1 , the wireless headset is paired with the mobile phone through the Bluetooth function. In order to realize Bluetooth, WiFi or other data transmission, the electronic device is equipped with an antenna, and the antenna and other components are packaged together in the same packaging structure. However, during the operation of the electronic device, the antenna will generate electromagnetic waves. In a small space, the antenna will cause electromagnetic wave interference to other components, causing the working performance of other components to decline. If it is in such a working state for a long time, the device is prone to damage, which in turn causes damage to the electronic device. Summary of the invention

[0005] The embodiments of the present application provide an electronic device and a chip packaging method, which can ensure the shielding effect between components and avoid mutual influence between components.

[0006] To achieve the above objectives, the present application provides the following technical solutions:

[0007] In a first aspect, an embodiment of the present application provides an electronic device, comprising: a shell; a substrate is arranged in the shell; a first crystal device and an adapter board are arranged in parallel on one surface of the substrate, and the adapter board includes a first grounding pad; the first grounding pad is arranged on the surface of the adapter board facing the substrate, and the adapter board is electrically connected to the substrate through the first grounding pad to ground the adapter board; a first plastic sealing layer, a first part of the first plastic sealing layer is arranged on the surface of the first crystal device, and a second part of the first plastic sealing layer is arranged between the adapter board and the substrate, and the first part and the second part are an integral structure; the surface of the first part is covered with a first shielding metal, and the first shielding metal is electrically connected to the first grounding pad to ground the first shielding metal.

[0008] It can be seen from the above technical solution that the first part is arranged outside the first crystal device, and through the grounding of the first part, a closed Faraday cage can be formed to separate the first crystal device from the adapter plate, so as to achieve mutual shielding between the first crystal device and the adapter plate. In the process of achieving shielding, there is no need to increase the layout space, and the shielding effect is obvious.

[0009] In one implementation, the adapter board further includes an interconnection via, one end of which is connected to the first grounding pad, and the other end of which passes through the surface of the adapter board facing away from the substrate; the first shielding metal extends from the surface of the first portion to the surface of the adapter board facing away from the substrate, and is connected to the interconnection via, so that the first shielding metal is connected to the first grounding pad through the interconnection via. In this way, the first shielding metal can be grounded by covering the interconnection via, and the grounding of the first shielding metal can be achieved without adding components, with a simple process and high integration.

[0010] In one implementation, the adapter board further includes an interconnection via and a second grounding pad; the second grounding pad is disposed on a surface of the adapter board facing away from the substrate, and both ends of the interconnection via are respectively connected to the first grounding pad and the second grounding pad; the first shielding metal extends from the surface of the first portion to the surface of the adapter board facing away from the substrate, and is connected to the second grounding pad, so that the first shielding metal is connected to the first grounding pad through the second grounding pad and the interconnection via. In this way, the first shielding metal can be grounded through the second grounding pad, the interconnection via, and the first grounding pad.

[0011] In one implementation, the second shielding metal includes a first shielding segment and a second shielding segment; the first shielding segment is arranged on the side of the adapter plate facing the first crystal device, and one end of the first shielding segment away from the substrate is connected to the first shielding metal; the second shielding segment is arranged on the surface of the adapter plate facing the substrate, one end of the second shielding segment is connected to the first shielding segment, and the other end is connected to the first grounding pad. In this way, the first shielding metal can be connected to the first grounding pad through the second shielding segment and the first shielding segment, thereby achieving grounding.

[0012] In one implementation, the second shielding metal also includes a third shielding segment, which is arranged on the surface of the adapter board facing away from the substrate, one end of the third shielding segment is connected to the first shielding segment, and the other end extends a certain distance toward the direction close to the second grounding pad, and the third shielding segment is connected to the first shielding metal.

[0013] In one implementation, a third grounding pad is provided at the contact point between the first shielding metal and the substrate, and the first shielding metal is connected to the third grounding pad to ground the first shielding metal. In this way, the end of the first shielding metal away from the adapter board can be grounded.

[0014] In one implementation, the adapter plates are distributed at the edge of the substrate.

[0015] In one implementation, it also includes: a second crystal device is arranged on the other surface of the substrate; a second plastic encapsulation layer, the second plastic encapsulation layer is arranged on the surface of the second crystal device; the surface of the second plastic encapsulation layer and the side of the substrate are covered with a third shielding metal; there is a grounding metal layer inside the substrate, and the grounding metal layer extends from the inside of the substrate to the side of the substrate and is connected to the third shielding metal. In this way, double-sided packaging of the substrate can be achieved, and the first crystal device on one side of the substrate can be shielded from each other with the adapter board, and the second crystal device on the other side of the substrate can also be separated from the outside to avoid electromagnetic signal leakage.

[0016] In an implementation manner, the third shielding metal further covers the side surface of the second portion facing away from the first crystal device, and further covers the side surface of the transfer board facing away from the first crystal device.

[0017] In one implementation, the first crystal device includes: one or more of: a NOR flash memory, a MOS tube, a SoC chip, a decoding circuit, a charging chip, an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, and a sensor.

[0018] In one implementation, the second crystal device includes: one or more of: a NOR flash memory, a MOS tube, a SoC chip, a decoding circuit, a charging chip, an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, and a sensor.

[0019] In one implementation, the first shielding metal, the second shielding metal, and the third shielding metal are formed by a spraying or sputtering process.

[0020] In the second aspect, an embodiment of the present application also provides a chip packaging method, including: arranging a substrate inside a shell; a first crystal device is bonded or welded to one side surface of the substrate, a first grounding pad is prepared on an adapter board, and the adapter board is welded to one side surface of the substrate through the first grounding pad, the first grounding pad is arranged on the surface of the adapter board facing the substrate, and the first crystal device and the adapter board are arranged in parallel; the adapter board is electrically connected to the substrate through the first grounding pad to ground the adapter board; a plastic encapsulation material is applied on the surface of the first crystal device to form a first part; a plastic encapsulation material is applied between the adapter board and the substrate to form a second part; the first part and the second part form a first plastic encapsulation layer, and the first part and the second part are an integral structure; after the first part is solidified, metal is covered on the surface of the first part to form a first shielding metal, and the first shielding metal is electrically connected to the first grounding pad to ground the first shielding metal.

[0021] It can be seen from the above technical solution that the first part is arranged outside the first crystal device, and through the grounding of the first part, a closed Faraday cage can be formed to separate the first crystal device from the adapter plate, thereby realizing mutual shielding between the first crystal device and the adapter plate. In the process of realizing shielding, there is no need to increase the layout space, and the shielding effect is obvious.

[0022] In one implementation, an interconnection via is prepared on the adapter board, one end of the interconnection via is connected to the first grounding pad, and the other end passes through the surface of the adapter board facing away from the substrate; the first shielding metal is extended from the surface of the first part to the surface of the adapter board facing away from the substrate, and connected to the interconnection via, so that the first shielding metal is connected to the first grounding pad through the interconnection via. In this way, the first shielding metal can be grounded by covering the interconnection via, and the grounding of the first shielding metal can be achieved without adding components, with a simple process and high integration.

[0023] In one implementation, an interconnection via and a second grounding pad are prepared on the adapter board; the second grounding pad is arranged on the surface of the adapter board facing away from the substrate, and both ends of the interconnection via are respectively connected to the first grounding pad and the second grounding pad; the first shielding metal is extended from the surface of the first part to the surface of the adapter board facing away from the substrate, and connected to the second grounding pad, so that the first shielding metal is connected to the first grounding pad through the second grounding pad and the interconnection via. In this way, the first shielding metal can be grounded through the second grounding pad, the interconnection via and the first grounding pad.

[0024] In one implementation, the side of the adapter plate facing the first crystal device is covered with metal to form a first shielding segment, and the end of the first shielding segment away from the substrate is connected to the first shielding metal; the surface of the adapter plate facing the substrate is covered with metal to form a second shielding segment, and one end of the second shielding segment is connected to the first shielding segment, and the other end is connected to the first grounding pad; the first shielding segment and the second shielding segment form a second shielding metal. In this way, the first shielding metal can be connected to the first grounding pad through the second shielding segment and the first shielding segment, thereby achieving grounding.

[0025] In one implementation, metal is covered on the surface of the adapter board facing away from the substrate to form a third shielding segment, one end of the third shielding segment is connected to the first shielding segment, and the other end extends a certain distance toward the second ground pad, and the third shielding segment is connected to the first shielding metal; the first shielding segment, the second shielding segment and the third shielding segment form a second shielding metal.

[0026] In one implementation, a third grounding pad is prepared at the contact point between the first shielding metal and the substrate, and the first shielding metal is connected to the third grounding pad to ground the first shielding metal. In this way, the end of the first shielding metal away from the adapter board can be grounded.

[0027] In one implementation, the adapter board is welded to a side surface of the substrate through a first grounding pad, and the adapter board is distributed at an edge of the substrate.

[0028] In one implementation, the second crystal device is welded or bonded to the other surface of the substrate; a plastic encapsulation material is applied to the surface of the second crystal device to form a second plastic encapsulation layer; after the second plastic encapsulation layer is solidified, metal is covered on the surface of the second plastic encapsulation layer and the side of the substrate to form a third shielding metal; a grounding metal layer is prepared inside the substrate, and the grounding metal layer extends from the inside of the substrate to the side of the substrate and is connected to the third shielding metal. In this way, double-sided packaging of the substrate can be achieved, and the first crystal device on one side of the substrate can be shielded from each other with the adapter board, and the second crystal device on the other side of the substrate can also be separated from the outside to avoid electromagnetic signal leakage.

[0029] In one implementation, a side of the second portion facing away from the first crystal device and a side of the adapter plate facing away from the first crystal device are covered with metal to form a third shielding metal.

[0030] In one implementation, one or more of a NOR flash memory, a MOS tube, a SoC chip, a decoding circuit, a charging chip, an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, and a sensor.

[0031] In one implementation, one or more of a NOR flash memory, a MOS tube, a SoC chip, a decoding circuit, a charging chip, an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, and a sensor.

[0032] In one implementation, the first shielding metal, the second shielding metal, and the third shielding metal are formed by a spraying or sputtering process. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a schematic diagram of the connection between a wireless headset and a mobile phone;

[0034] Figure 2 It is a schematic diagram of a current electronic device;

[0035] Figure 3 This is a schematic diagram of the first structure of an electronic device provided in an embodiment of the present application;

[0036] Figure 4 This is a schematic diagram of a first Faraday cage of an electronic device provided in an embodiment of the present application;

[0037] Figure 5 is a second structural schematic diagram of an electronic device provided in an embodiment of the present application;

[0038] Figure 6 This is a schematic diagram of a second Faraday cage of an electronic device provided in an embodiment of the present application;

[0039] Figure 7 is a third structural schematic diagram of an electronic device provided in an embodiment of the present application;

[0040] Figure 8 Schematic diagram of a third Faraday cage of an electronic device provided in an embodiment of the present application;

[0041] Fig. 9 is a fourth structural schematic diagram of an electronic device provided in an embodiment of the present application;

[0042] Fig.10 Schematic diagram of a fourth Faraday cage of an electronic device provided in an embodiment of the present application;

[0043] Fig.11 It is a schematic diagram of the packaging of peripheral components provided in an embodiment of the present application;

[0044] Fig.12 is a fifth structural schematic diagram of an electronic device provided in an embodiment of the present application;

[0045] Fig.13 Schematic diagram of a fifth Faraday cage of an electronic device provided in an embodiment of the present application;

[0046] Fig.14 It is a schematic diagram of the first shielding metal grounding provided in an embodiment of the present application;

[0047] Fig.15 This is a schematic diagram of the structure of a TWS headset provided in an embodiment of the present application;

[0048] Fig.16 It is a schematic diagram of a chip packaging method provided in an embodiment of the present application;

[0049] Fig.17 is an exploded view of a chip packaging method provided in an embodiment of the present application;

[0050] Fig.18 This is another exploded view of a first shielding metal package provided in an embodiment of the present application;

[0051] Fig.19 This is another exploded view of a first shielding metal package provided in an embodiment of the present application;

[0052] Fig. 20 This is another exploded view of a first shielding metal package provided in an embodiment of the present application;

[0053] Fig.21 This is a schematic diagram of another chip packaging method provided in an embodiment of the present application;

[0054] Fig. 22 is an exploded view of another chip packaging method provided in an embodiment of the present application;

[0055] Fig.23 It is a structural schematic diagram of a shell of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0056] In order to facilitate understanding of the technical solution of the embodiment of the present application, before describing the specific implementation of the embodiment of the present application, some technical terms in the technical field to which the embodiment of the present application belongs are briefly explained. Among them:

[0057] Reflow soldering is a process in which air or nitrogen is heated to a sufficiently high temperature and then blown toward a circuit board with components already attached, so that the solder on both sides of the components melts and then bonds to the circuit board.

[0058] True wireless stereo (TWS) headphones, that is, real wireless stereo headphones, can be connected to mobile phones and other devices via Bluetooth. TWS headphones can process Bluetooth signals into wireless separation of left and right channels, and the left and right headphones can be used independently. They have the characteristics of low latency, fast Bluetooth connection, fast transmission speed and low energy consumption.

[0059] Electronic devices have been developing in a trend of miniaturization. At present, there are small-sized smart watches, smart bracelets, and wireless headphones. As the size of electronic devices gradually decreases and their functions gradually diversify, the number of components used to realize the functions also gradually increases, which also leads to the density of components in electronic devices gradually increasing. Therefore, higher requirements are put forward for the packaging process of electronic devices.

[0060] For electronic devices with Bluetooth, WiFi or other data transmission capabilities, see, for example, Figure 1 , the wireless headset is paired with the mobile phone through the Bluetooth function. In order to realize Bluetooth, WiFi or other data transmission, the electronic device is equipped with an antenna, and the antenna and other components are packaged together in the same packaging structure. However, during the operation of the electronic device, the antenna will generate electromagnetic waves. In a small space, the antenna will cause electromagnetic wave interference to other components, causing the working performance of other components to decline. If it is in such a working state for a long time, the device is prone to damage, which in turn causes damage to the electronic device.

[0061] See also Figure 2 , which is a schematic diagram of a current electronic device.

[0062] like Figure 2As shown, the electronic device may include: a substrate 01, an adapter board 02 welded on one side of the substrate 01, and a first component 03. The adapter board 02 is a circuit board capable of transmitting signals, and generates electromagnetic waves when working. Since the adapter board 02 and the first component 03 are arranged side by side on one side of the substrate 01, the electromagnetic waves generated by the adapter board 02 when working will directly cause electromagnetic wave interference to the first component 03.

[0063] In order to solve the above problems, an embodiment of the present application provides an electronic device.

[0064] See also Figure 3 , is a schematic diagram of the first structure of the electronic device provided in the embodiment of the present application. Fig.23 , is a schematic diagram of the structure of a housing of an electronic device provided in an embodiment of the present application. Figure 3 and Fig.23 It can be known that the electronic device may include: a housing 13 , a substrate 1 , a first crystal device 2 , an adapter board 3 , a first plastic packaging layer 4 and a first shielding metal 6 , wherein the first crystal device 2 and the adapter board 3 are arranged in parallel on one side surface of the substrate 1 .

[0065] In a specific implementation, the substrate 1 is disposed inside the housing 13. A grounding layer is disposed inside the substrate 1 to enable the components electrically connected to the substrate 1 to be grounded. The first crystal device 2 can be fixed on the substrate 1 by welding or bonding.

[0066] The adapter board 3 may include a first grounding pad 31 , which is disposed on a surface of the adapter board 3 facing the substrate 1 . The adapter board 3 may be electrically connected to the substrate 1 via the first grounding pad 31 , so that the adapter board 3 is grounded.

[0067] In some implementations, the transfer board 3 can be packaged on the substrate 1 in a ball grid array (BGA) package, and a BGA solder ball can be formed between the first ground pad 31 and the substrate 1, and the first ground pad 31 provides an attachment position for the BGA solder ball. In this way, the transfer board 3 can be packaged on the substrate 1, and the transfer board 3 is electrically connected to the substrate 1 through the first ground pad 31 and the BGA solder ball.

[0068] The first plastic encapsulation layer 4 may include a first portion 41 and a second portion 42, wherein the first portion 41 may be disposed on the surface of the first crystal device 2, and the second portion 42 may be disposed between the adapter plate 3 and the substrate 1. The first portion 41 may wrap the first crystal device 2, and the second portion 42 may fill between the adapter plate 3 and the substrate 1, so as to provide insulation, heat dissipation, and dust prevention, and at the same time, prevent the first crystal device 2 and the adapter plate 3 from being displaced or damaged when subjected to external forces.

[0069] The first portion 41 and the second portion 42 may be formed of a molding compound and molded by a molding jig.

[0070] It should be understood that the division of the first part 41 and the second part 42 is only for the convenience of description, rather than a division in a physical sense, that is, the first part 41 and the second part 42 are an integral structure.

[0071] The first shielding metal 6 may cover the surface of the first portion 41, and the first shielding metal 6 is electrically connected to the first grounding pad 31 to ground the first shielding metal 6. The first shielding metal 6 may be prepared on the surface of the first portion 41 by spraying or sputtering, and the thickness of the first shielding metal 6 may be designed according to actual conditions.

[0072] from Figure 3 It can be seen that after the first shielding metal 6 is grounded through the first grounding pad 31, a closed space can be formed, and this space can isolate the first crystal device 2. In this way, the first crystal device 2 and the adapter board 3 can be shielded from each other, so that the first crystal device 2 and the adapter board 3 will not interfere with each other.

[0073] In one implementation, the electronic device provided in the embodiment of the present application may further be provided with a third grounding pad 8, which is provided at a location where the first shielding metal 6 contacts the substrate 1, and the first shielding metal 6 is connected to the third grounding pad 8, so that the first shielding metal 6 is grounded through the substrate 1. The third grounding pad 8 may be prepared in advance on the substrate 1.

[0074] Figure 3 A grounding method of the first shielding metal 6 is also specifically shown in FIG. Figure 3 It can be seen that the adapter board 3 includes an interconnection via 32, one end of the interconnection via 32 is connected to the first ground pad 31, and the other end passes through the surface of the adapter board 3 facing away from the substrate 1. The first shielding metal 6 extends from the surface of the first portion 41 to the surface of the adapter board 3 facing away from the substrate 1, and is connected to the interconnection via 32, so that the first shielding metal 6 is connected to the first ground pad 31 through the interconnection via 32.

[0075] The interconnection via 32 can play the role of electrical connection. After the first shielding metal 6 covers the surface of one side of the interconnection via 32, it can be electrically connected to the first grounding pad 31 on the other side of the interconnection via 32 through the interconnection via 32. In this way, the substrate grounding layer, the first shielding metal 6, the interconnection via 32, the first grounding pad 31 and the BGA solder ball form a quasi-enclosed space, that is, a "Faraday cage". Figure 4 , is a schematic diagram of a first Faraday cage of an electronic device provided in an embodiment of the present application, Figure 4The area indicated by the dotted line in the middle can be regarded as a "Faraday cage". The "Faraday cage" can play a shielding role, which can protect the first crystal device 2 inside it from electromagnetic interference from the adapter plate 3, and can also protect the first crystal device 2 from electromagnetic interference from the external environment, and at the same time, it can also protect the adapter plate 3 outside the "Faraday cage" from interference from the first crystal device 2.

[0076] The aperture of the interconnection via 32 can be designed according to actual needs, and is not specifically limited in this application.

[0077] When preparing the first shielding metal 6, on the surface of the adapter board 3 facing away from the substrate 1, since the first shielding metal 6 only covers the interconnection vias 32, in order to avoid the spraying or sputtering process from affecting other components of the adapter board 3, a shielding film can be covered on the adapter board 3 except for the interconnection vias 32 to play a shielding role.

[0078] See also Figure 5 , is a schematic diagram of a second structure of an electronic device provided in an embodiment of the present application. Figure 5 It can be seen that the grounding method of the first shielding metal 6 can also be achieved by the following components:

[0079] The adapter board 3 further includes a second grounding pad 33, which is disposed on the surface of the adapter board 3 facing away from the substrate 1, and the two ends of the interconnection via 32 are respectively connected to the first grounding pad 31 and the second grounding pad 33. The first shielding metal 6 extends from the surface of the first portion 41 to the surface of the adapter board facing away from the substrate 1, and is connected to the second grounding pad 33, so that the first shielding metal 6 is connected to the first grounding pad 31 through the second grounding pad 33 and the interconnection via 32.

[0080] In this way, the substrate ground layer, the first shielding metal 6, the second ground pad 33, the interconnection via 32, the first ground pad 31 and the BGA solder ball form a quasi-enclosed space, namely a "Faraday cage". Figure 6 , is a schematic diagram of a second Faraday cage of an electronic device provided in an embodiment of the present application, Figure 6 The area indicated by the dotted line frame can be regarded as a "Faraday cage". The effects that can be achieved by the "Faraday cage" have been explained in the previous description and will not be repeated here.

[0081] When preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the second grounding pad 33, in order to avoid the spraying or sputtering process from affecting other components of the adapter plate 3, a shielding film can be covered on the adapter plate 3 except for the second grounding pad 33 to play a shielding role.

[0082] See also Figure 7, which is a third structural schematic diagram of the electronic device provided in the embodiment of the present application. In order to achieve the grounding of the first shielding metal 6, a second shielding metal 7 may be disposed outside the adapter plate 3 by spraying or sputtering.

[0083] The second shielding metal 7 may include a first shielding segment 71 and a second shielding segment 72. The first shielding segment 71 is disposed on the side of the adapter plate 3 facing the first crystal device 2, and one end of the first shielding segment 71 away from the substrate 1 is connected to the first shielding metal 6. One end of the second shielding segment 72 is connected to the first shielding segment 71, and the other end is connected to the first ground pad 31.

[0084] After the first shielding metal 6 is connected to the first shielding segment 71 , it can be connected to the first grounding pad 31 through the first shielding segment 71 and the second shielding segment 72 , thereby achieving grounding.

[0085] In this way, the substrate ground layer, the first shielding metal 6, the first shielding segment 71, the second shielding segment 72, the first grounding pad 31 and the BGA solder ball form a quasi-enclosed space, namely a "Faraday cage". Figure 8 , is a schematic diagram of a third structure Faraday cage of an electronic device provided in an embodiment of the present application, Figure 8 The area indicated by the dotted line frame can be regarded as a "Faraday cage". The effects that can be achieved by the "Faraday cage" have been explained in the previous description and will not be repeated here.

[0086] When preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the first shielding segment 71, in order to avoid the spraying or sputtering process from affecting other components of the adapter plate 3, a shielding film can be covered on the surface of the adapter plate 3 facing away from the substrate 1 to play a shielding role.

[0087] See also Fig. 9 , is a fourth structural diagram of an electronic device provided in an embodiment of the present application. Fig. 9 It can be seen that in order to achieve grounding of the first shielding metal 6 , the second shielding metal 7 can also be disposed on the outside of the adapter plate 3 by spraying or sputtering.

[0088] The second shielding metal 7 includes not only the first shielding segment 71 and the second shielding segment 72 , but also a third shielding segment 73 .

[0089] The first shielding segment 71 is arranged on the side of the adapter plate 3 facing the first crystal device 2, and one end of the first shielding segment 71 away from the substrate 1 is connected to the first shielding metal 6. One end of the second shielding segment 72 is connected to the first shielding segment 71, and the other end is connected to the first grounding pad 31. The third shielding segment 73 is arranged on the surface of the adapter plate 3 facing away from the substrate 1, and one end of the third shielding segment 73 is connected to the first shielding segment 71, and the other end extends a certain distance in the direction facing away from the first crystal device 2.

[0090] Depend on Fig. 9 It can be seen that when the third shielding segment 73 extends in a direction approaching the second grounding pad 33 , the third shielding segment 73 does not contact the second grounding pad 33 .

[0091] The first shielding metal 6 may extend in a direction away from the first crystal device 2 to completely cover the third shielding segment 73 .

[0092] After the first shielding metal 6 contacts the third shielding segment 73 , it is connected to the first grounding pad 31 through the third shielding segment 73 , the first shielding segment 71 and the second shielding segment 72 , thereby achieving grounding.

[0093] In this way, the substrate ground layer, the first shielding metal 6, the third shielding segment 73, the first shielding segment 71, the second shielding segment 72, the first grounding pad 31 and the BGA solder ball form a quasi-enclosed space, namely a "Faraday cage". Fig.10 , is a schematic diagram of a fourth Faraday cage of an electronic device provided in an embodiment of the present application, Fig.10 The area indicated by the dotted box can be regarded as a "Faraday cage". The effect that can be achieved by the "Faraday cage" has been explained in the previous description and will not be repeated here.

[0094] When preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the third shielding segment 73, in order to avoid the spraying or sputtering process from affecting other components of the adapter plate 3, a shielding film can be set on the surface of the adapter plate 3 facing away from the substrate 1, and ensure that the shielding film does not cover the third shielding segment 73 to play a shielding role.

[0095] In some implementations, the adapter board 3 prepared with the second shielding metal 7 may also include a first grounding pad 31, an interconnection via 32, and a second grounding pad 33, etc. The first grounding pad 31 may be electrically connected to the substrate 1 through a BGA solder ball, and the surface of the second grounding pad 33 may be tinned. The second grounding pad 33 may be connected to other external devices by welding, so that the other external devices are connected to the first grounding pad 31 through the second grounding pad 33 and the interconnection via 32. The number of the first grounding pad 31, the interconnection via 32, and the second grounding pad 33 included in the adapter board 3 may also be planned according to actual needs, and is not limited to only one first grounding pad 31, one interconnection via 32, and one second grounding pad 33.

[0096] In the embodiment of the present application, the first crystal device 2 can be packaged on the substrate 1 by welding or bonding. Fig. 9 The first crystal device 2a is packaged on the substrate 1 by bonding and electrically connected to the substrate 1 by bonding wires, and the first crystal device 2b is directly soldered on the substrate 1. It is understandable that the first crystal device 2 Fig. 9 In addition to the packaging method shown in , other feasible packaging methods can also be used, and the embodiments of the present application are not limited to this.

[0097] In some implementations, the electronic device provided in the embodiments of the present application further includes peripheral components. Fig.11 , is a schematic diagram of the packaging of peripheral components provided in an embodiment of the present application. Fig.11 (a) shows Figure 3 Peripheral components of electronic equipment, Fig.11 (b) shows Figure 5 Peripheral components of electronic equipment, Fig.11 (c) shows Figure 7 Peripheral components of electronic equipment, Fig.11 (d) shows Fig. 9 Peripheral components of electronic devices can be arranged on one side of the substrate 1, specifically on the side of the first shielding metal 6 away from the first crystal device 2, and can be packaged by welding or bonding. The peripheral components can be gravity sensors or other devices that are not easily affected by electromagnetic signal interference.

[0098] In some implementations, the electronic device provided in the embodiment of the present application may include one or more adapter plates 3, and the multiple adapter plates 3 may be arranged along the edge of the substrate 1. The number and specific arrangement positions of the adapter plates 3 may be designed according to actual conditions, and are not specifically limited in the present application.

[0099] See also Fig.12, is a fifth structural diagram of an electronic device provided in an embodiment of the present application. Fig.12 It can be seen that the adapter plate 3 provided in the embodiment of the present application is distributed at the edge of the substrate 1. Fig.12 It is a schematic diagram of an electronic device after vertical slicing, so in Fig.12 In the embodiment, a plurality of adapter plates 3 are distributed on both sides of the first crystal device 2 .

[0100] Understandably, Fig.12 The packaging form of the first crystal device 2 shown in the figure is only an example and does not constitute a specific limitation on the packaging form of the first crystal device 2. For example, the first crystal device 2c can be electrically connected to the substrate 1 through a BGA solder ball, and the first crystal device 2d can be directly soldered on the substrate 1.

[0101] See also Fig.13 , is a schematic diagram of a fifth Faraday cage of an electronic device provided in an embodiment of the present application, Fig.13 The area shown in the dotted box can be regarded as a "Faraday cage". Fig.13 It can be seen that when there are two adapter plates 3, the two ends of the first shielding metal 6 are connected to the first grounding pad 31 through the third shielding segment 73, the first shielding segment 71 and the second shielding segment 72 to achieve grounding. At this time, the substrate grounding layer, the first shielding metal 6, the two third shielding segments 73, the two first shielding segments 71, the two first grounding pads 31 and the BGA solder balls form a quasi-enclosed space, namely a "Faraday cage".

[0102] In some implementations, when there are multiple adapter plates 3, the grounding method of the first shielding metal 6 is not limited to the method of cooperating with the third shielding segment 73, the first shielding segment 71 and the second shielding segment 72, but can also be through the interconnection via 32, etc. For details, see Fig.14 , which will not be described in detail here.

[0103] For electronic devices with a large number of components, the components are generally packaged in a stacking manner while ensuring miniaturization. Taking the electronic device provided in the embodiment of the present application as an example, in addition to components being arranged on one side of the substrate 1, components may also be arranged on the other side of the substrate 1. Therefore, the shielding of the components on the other side of the substrate 1 should also be ensured during packaging.

[0104] Continue to see Fig.12 The electronic device provided in the embodiment of the present application further includes a second crystal device 9, a second plastic packaging layer 10, a third shielding metal 11 and a grounding metal layer 12.

[0105] The second crystal device 9 is disposed on the other surface of the substrate 1 , and the second plastic packaging layer 10 is disposed on the surface of the second crystal device 9 .

[0106] In a specific implementation, the second crystal device 9 can be packaged on the substrate 1 by welding or bonding.

[0107] The second plastic encapsulation layer 10 can wrap the second crystal device 9 to provide insulation, heat dissipation, and dust prevention, and can prevent the second crystal device 9 from shifting or being damaged when subjected to external forces. The second plastic encapsulation layer 10 can be formed of a plastic encapsulation material and formed by a plastic encapsulation jig.

[0108] The third shielding metal 11 covers the surface of the second plastic packaging layer 10 and the side surface of the substrate 1 . The grounding metal layer 12 is located inside the substrate 1 and extends from the inside of the substrate 1 to the side surface of the substrate 1 and is connected to the third shielding metal 11 .

[0109] In a specific implementation, the third shielding metal 11 can be prepared and formed on the surface of the second plastic packaging layer 10 and the side of the substrate 1 by spraying or sputtering, and the thickness of the third shielding metal 11 can be designed according to actual conditions.

[0110] After the third shielding metal 11 covers the second plastic packaging layer 10 and the surface and the side of the substrate 1, it forms a complete package for the second crystal device 9, isolating the second crystal device 9 from other devices. The third shielding metal 11 can be grounded through the grounding metal layer 12 extending from the inside of the substrate 1 to achieve a shielding effect on the second crystal device 9, avoid mutual interference between the second crystal device 9 and other devices, avoid electromagnetic interference of the second crystal device 9 from the external environment, and also avoid the second crystal device 9 from interfering with the outside world.

[0111] The third shielding metal 11 may also cover the side surface of the second portion 42 facing away from the first crystal device 2 , and may also cover the surface of the transfer board 3 facing away from the first crystal device 2 .

[0112] from Fig.12 It can be seen that, through the coverage of the third shielding metal 11, a complete shielding layer can be formed to separate the substrate 1 and the second crystal device 9 from the outside world, making the shielding effect more significant.

[0113] After the double-sided packaging is completed, the first crystal device 2 and the adapter board 3 on one side of the substrate 1 can be shielded from each other, and the second crystal device 9 on the other side of the substrate 1 can also be separated from the outside.

[0114] In some implementations, the first crystal device 2 may include: one or more of a NOR flash memory, a MOS tube, a SoC chip, a decoding circuit (codec IC), a charging chip (charger), an RLC (resistance, inductance, capacitance) device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, and a sensor. The second crystal device 9 may include: one or more of a NOR flash memory, a MOS tube, a SoC chip, a decoding circuit (codec IC), a charging chip (charger), an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, and a sensor. The first crystal device 2 and the second crystal device 9 may also be other types of chips, which are not specifically limited in this application.

[0115] In some implementations, by Fig.12 It can be seen that the electronic device provided in the embodiment of the present application further includes a solder resist layer 5, which covers the surface of the adapter board 3 facing away from the substrate 1. In the operations of soldering the adapter board 3 to the substrate 1 using the reflow soldering technology and tinning the second ground pad 33 of the adapter board 3, the position where the solder resist layer 5 is set can be guaranteed not to be covered by solder.

[0116] In some implementations, the electronic device provided in the embodiments of the present application may be a TWS headset. Fig.15 , is a schematic diagram of a TWS headset structure provided in an embodiment of the present application. Fig.15It can be known that the TWS earphone package may include: a substrate 1, a first crystal device 2 and an adapter board 3 arranged in parallel on one side surface of the substrate 1. The number of adapter boards 3 included in the TWS earphone during packaging may be one, and the adapter board 3 includes a first grounding pad 31, which is arranged on the surface of the adapter board 3 facing the substrate 1, and the adapter board 3 is electrically connected to the substrate 1 through the first grounding pad 31, so that the adapter board 3 is grounded. The adapter board 3 can be specifically packaged on the substrate 1 through a BGA solder ball. The adapter board 3 may also include an interconnection via 32 and a second grounding pad 32, and the second grounding pad 32 may be tin-plated. A first part 41 is provided on the surface of the first crystal device 2, and a second part 42 is provided between the adapter board 3 and the first grounding pad 31. The first part 41 and the second part 42 are an integral structure, and the first part 41 and the second part 42 form a first plastic sealing layer 4. A second shielding metal 7 is also included, and the second shielding metal 7 includes a first shielding segment 71, a second shielding segment 72 and a third shielding segment 73. The first shielding segment 71 is arranged on the side of the adapter plate 3 facing the first crystal device 2, and the end of the first shielding segment 71 away from the substrate 1 is connected to the first shielding metal 6. One end of the second shielding segment 72 is connected to the first shielding segment 71, and the other end is connected to the first grounding pad 31. The third shielding segment 73 is arranged on the surface of the adapter plate 3 facing away from the substrate 1, one end of the third shielding segment 73 is connected to the first shielding segment 71, and the other end extends a certain distance in the direction facing away from the first crystal device 2, and the third shielding segment 73 is connected to the first shielding metal 6. A third grounding pad 8 is also arranged on the substrate 1, and the third grounding pad 8 is arranged at the contact point between the first shielding metal 6 and the substrate 1, and the first shielding metal 6 is connected to the third grounding pad 8. In this way, the first shielding metal 6 is grounded through the third grounding pad 8 and the second shielding metal 7, and the substrate 1 is prepared with a grounding layer in advance.

[0117] The TWS package also includes a second crystal device 9, a second plastic layer 10, a third shielding metal 11 and a grounding metal layer 12. The second crystal device 9 is arranged on the other side surface of the substrate 1, and the second plastic layer 10 is arranged on the surface of the second crystal device 9. The third shielding metal 11 covers the surface of the second plastic layer 10 and the side of the substrate 1. The third shielding metal 11 also covers the side of the second part 42 facing away from the first crystal device 2, and also covers the side of the adapter board 3 facing away from the first crystal device 2. The grounding metal layer 12 is located inside the substrate 1, and extends from the inside of the substrate 1 to the side of the substrate 1, and is connected to the third shielding metal 11.

[0118] Specifically, the first crystal device 2 can be a NOR flash, a SoC chip and a crystal, the second crystal device 9 can be a charger chip (charger), a decoding circuit (codec IC), a sensor, an RLC device and a MOS tube, etc., and the peripheral components can be a gravity sensor.

[0119] It is understandable that when the TWS earphones are packaged, the first shielding metal 6 can also include other grounding methods, which can be specifically referred to above and will not be described in detail here.

[0120] The embodiment of the present application also provides a chip packaging method, which can be applied to the packaging field of electronic devices, especially electronic devices with circuit boards with signal transmission functions.

[0121] Fig.16 A schematic flow chart of a chip packaging method provided in an embodiment of the present application. Fig.17 An exploded view of a chip packaging method provided in an embodiment of the present application.

[0122] The method provided in the embodiment of the present application is described in detail below. Fig.16 As shown, the method may include the following steps:

[0123] S101: baking the substrate 1.

[0124] The substrate 1 may be a circuit board with ground layer wiring and pads arranged, and may be a printed circuit board (PCB) or a flexible printed circuit board (FPC).

[0125] Since the substrate 1 will be corroded by moisture during storage, the substrate 1 with high moisture is prone to bursting during packaging. In order to ensure the packaging effect of the substrate 1, the substrate 1 is baked before the packaging operation. The baking temperature and duration can be: 120°C for 8 hours, 150°C for 4-6 hours, or 125°C for 24 hours, etc. The exact baking temperature and duration can be selected according to actual conditions.

[0126] During the preparation process of the substrate 1, a third grounding pad 8 is also provided to facilitate the subsequent grounding of the first shielding metal 6. The specific preparation position of the third grounding pad 8 will be described in detail below.

[0127] S102: Printing solder paste on one surface of the substrate 1 .

[0128] When soldering and packaging devices, solder can help with flux.

[0129] S103: Arrange the substrate 1 inside the housing 13;

[0130] S104: Bond or weld the first crystal device 2 to one side surface of the substrate 1, prepare a first grounding pad 31 on the adapter board 3, weld the adapter board 3 to one side surface of the substrate 1 through the first grounding pad 31, the first grounding pad 31 is arranged on the surface of the adapter board 3 facing the substrate 1, and the first crystal device 2 and the adapter board 3 are arranged in parallel; the adapter board 3 is electrically connected to the substrate 1 through the first grounding pad 31 to ground the adapter board 3.

[0131] In a specific implementation, the adapter plate 3 may be prepared with the first ground pad 31 in advance, and then the adapter plate 3 is welded to the substrate 1 after the first ground pad 31 is prepared.

[0132] Bonding the first crystal device 2 may specifically include the following steps:

[0133] S1041: Plasma cleaning is performed on one surface of the substrate 1.

[0134] The plasma cleaning step can remove excess soldering flux, oil stains, etc. on the surface of the substrate 1 to prepare for bonding.

[0135] S1042: Glue is dispensed on one surface of substrate 1.

[0136] Specifically, the glue dispensing operation is performed at the position where the first crystal device 2 needs to be bonded.

[0137] S1043 : bonding the first crystal device 2 to one side surface of the substrate 1 .

[0138] S1044 : bonding wires between the first crystal device 2 and the substrate 1 .

[0139] Bonding is a method of achieving electrical connection. After bonding is performed between the first crystal device 2 and the substrate 1 , the first crystal device 2 is electrically connected to the substrate 1 .

[0140] Continue to see Fig.16 , the chip packaging method provided in the embodiment of the present application further includes:

[0141] S105: Apply a plastic encapsulation material on the surface of the first crystal device 2 to form a first part 41; apply a plastic encapsulation material between the adapter plate 3 and the substrate 1 to form a second part 42; the first part 41 and the second part 42 form a first plastic encapsulation layer 4, and the first part 41 and the second part 42 are an integrated structure.

[0142] The first part 41 and the second part 42 need to be cured for a period of time. After curing, the first part 41 can wrap the first crystal device 2, and the second part 42 can fill the space between the adapter plate 3 and the substrate 1 to play the role of insulation, heat dissipation and dust prevention. At the same time, it can prevent the first crystal device 2 and the adapter plate 3 from shifting or being damaged when subjected to external force.

[0143] The first part 41 and the second part 42 are formed by a molding jig. The molding compound may include epoxy resin and silicone resin materials.

[0144] The coating height of the first portion 41 can be flush with the height of the adapter plate 3 to ensure that the packaged electronic device has a good flatness and provide a flat surface for the subsequent preparation of the shielding metal. At the same time, the coating position of the first portion 41 at the end away from the first crystal device 2 can be flush with the edge of the third ground pad 8 to facilitate the subsequent preparation of the first shielding metal 6.

[0145] Before preparing the first part 41 and the second part 42 , the substrate 1 may be plasma cleaned to remove residual glue and the like on the surface of the substrate 1 .

[0146] S106 : After the first portion 41 is solidified, a metal is covered on the surface of the first portion 41 to form a first shielding metal 6 . The first shielding metal 6 is electrically connected to the first grounding pad 31 to ground the first shielding metal 6 .

[0147] In a specific implementation, the first shielding metal 6 can be covered by a spraying or sputtering process. Since the spraying or sputtering process has a wide coverage during the implementation process. When the first part 41 is sprayed or sputtered, it may affect the surface of the adapter plate 3 facing away from the substrate 1, so it is necessary to cover the surface of the adapter plate 3 facing away from the substrate 1 with a shielding film to play a shielding role. The specific coverage range of the shielding film is related to the extension distance of the first shielding metal 6 on the surface of the adapter plate 3 facing away from the substrate 1, which will be described in detail below.

[0148] In some implementations, Fig.11It can be known that the chip packaging method provided in the embodiment of the present application may also include packaging some peripheral components. The peripheral components may be arranged on one side surface of the substrate 1, specifically on the side of the first shielding metal 6 away from the first crystal device 2, and may be packaged by welding or bonding processes. The peripheral components may be gravity sensors, etc. The specific preparation steps are: first apply solder paste on the surface of the substrate 1 where the peripheral components need to be prepared, and then use the reflow soldering technology to solder the peripheral components to the corresponding positions. When the adapter plate 3 is covered with a shielding film, the position of the substrate 1 used to package the peripheral components is also covered with a shielding film to avoid the spraying or sputtering of the first shielding metal 6 affecting the subsequent packaging of peripheral components.

[0149] The chip packaging method provided in the embodiment of the present application further includes the following steps:

[0150] S107 : preparing a third grounding pad 8 at the contact position between the first shielding metal 6 and the substrate 1 , and connecting the first shielding metal 6 to the third grounding pad 8 , so that the first shielding metal 6 is grounded.

[0151] In a specific implementation, the first shielding metal 6 may cover a portion of the third grounding pad 8 to ensure that the first shielding metal 8 can be connected to the grounding layer of the substrate 1 through the third grounding pad 8 .

[0152] In one implementation, one end of the first shielding metal 6 away from the adapter board 3 is grounded by the third grounding pad 8, and the grounding of the side of the first shielding metal 6 close to the adapter board 3 can be achieved through the following S107 and S108.

[0153] Continue to see Fig.17 .

[0154] S108 : preparing an interconnection via 32 on the adapter board 3 , wherein one end of the interconnection via 32 is connected to the first ground pad 31 , and the other end thereof passes through the surface of the adapter board 3 facing away from the substrate 1 .

[0155] In a specific implementation, this step can be completed before performing S104 , that is, the preparation of the adapter plate 3 is completed before welding the adapter plate 3 to the substrate 1 .

[0156] S109 : extending the first shielding metal 6 from the surface of the first portion 41 to the surface of the adapter board 3 facing away from the substrate 1 , and connecting to the interconnection via 32 , so that the first shielding metal 6 is connected to the first ground pad 31 through the interconnection via 32 .

[0157] In a specific implementation, when preparing the first shielding metal 6 in S106 , S109 may be performed simultaneously to achieve grounding of the first shielding metal 6 .

[0158] It should be noted that when preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the interconnection vias 32, in order to avoid the spraying or sputtering process from affecting other parts of the adapter plate 3, a shielding film can be covered on the adapter plate 3 except for the interconnection vias 32 to play a shielding role. The specific covering position of the shielding film can be seen in Fig.17 .

[0159] In one implementation, one end of the first shielding metal 6 away from the adapter board 3 is grounded by the third grounding pad 8, and the grounding of the side of the first shielding metal 6 close to the adapter board 3 can also be achieved through the following S110 and S111.

[0160] See also Fig.18 , which is another exploded view of a first shielding metal package provided in an embodiment of the present application.

[0161] S110: preparing interconnection vias 32 and second grounding pads 33 on the adapter board 3; the second grounding pads 33 are arranged on the surface of the adapter board 3 facing away from the substrate 1, and the two ends of the interconnection vias 32 are respectively connected to the first grounding pad 31 and the second grounding pad 33.

[0162] In a specific implementation, this step can be completed before performing S103 , that is, the preparation of the adapter plate 3 is completed before welding the adapter plate 3 to the substrate 1 .

[0163] S111: Extend the first shielding metal 6 from the surface of the first part 41 to the surface of the adapter board 3 facing away from the substrate 1 and connect it to the second grounding pad 33 so that the first shielding metal 6 is connected to the first grounding pad 31 through the second grounding pad 33 and the interconnection via 32.

[0164] In a specific implementation, when preparing the first shielding metal 6 in S106 , S111 may be performed simultaneously to achieve grounding of the first shielding metal 6 .

[0165] It should be noted that when preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the second grounding pad 33, in order to avoid the spraying or sputtering process from affecting other components of the adapter plate 3, a shielding film can be covered on the adapter plate 3 except for the second grounding pad 33 to play a shielding role.

[0166] In one implementation, one end of the first shielding metal 6 away from the adapter board 3 is grounded by the third grounding pad 8, and the grounding of the side of the first shielding metal 6 close to the adapter board 3 can also be achieved through the following S112 and S113.

[0167] See also Fig.19, which is another exploded view of a first shielding metal package provided in an embodiment of the present application.

[0168] S112 : Covering the side of the adapter plate 3 facing the first crystal device 2 with metal to form a first shielding segment 71 , wherein one end of the first shielding segment 71 away from the substrate 1 is connected to the first shielding metal 6 .

[0169] S113: Covering the surface of the adapter plate 3 facing the substrate 1 with metal to form a second shielding segment 72, wherein one end of the second shielding segment 72 is connected to the first shielding segment 71, and the other end is connected to the first ground pad 31;

[0170] The first shielding segment 71 and the second shielding segment 72 form a second shielding metal 6 .

[0171] In a specific implementation, the step of forming the second shielding metal 6 is completed before performing S104 , that is, the preparation of the adapter plate 3 is completed before welding the adapter plate 3 on the substrate 1 .

[0172] It should be noted that when preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the first shielding segment 71, in order to avoid the spraying or sputtering process from affecting other components of the adapter plate 3, a shielding film can be covered on the surface of the adapter plate 3 facing away from the substrate 1 to play a shielding role.

[0173] In one implementation, one end of the first shielding metal 6 away from the adapter board 3 is grounded by the third grounding pad 8 , and the grounding of one side of the first shielding metal 6 close to the adapter board 3 can also be achieved through the following S113 .

[0174] The second shielding metal 7 may include not only the first shielding segment 71 and the second shielding segment 72, but also the third shielding segment 73 to achieve the grounding of the first shielding metal 6. Fig. 20 , is another exploded view of a first shielding metal package provided in an embodiment of the present application. Specifically:

[0175] S114: Covering the surface of the adapter board 3 facing away from the substrate 1 with metal to form a third shielding segment 73, one end of the third shielding segment 73 is connected to the first shielding segment 71, and the other end extends a certain distance toward the direction close to the second ground pad 33, and the third shielding segment 73 is connected to the first shielding metal 6;

[0176] The first shielding segment 71 , the second shielding segment 72 and the third shielding segment 73 form a second shielding metal 7 .

[0177] In a specific implementation, the step of forming the second shielding metal 6 is completed before performing S104 , that is, the preparation of the adapter plate 3 is completed before welding the adapter plate 3 on the substrate 1 .

[0178] It should be noted that when preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the third shielding segment 73, in order to avoid the spraying or sputtering process from affecting other components of the adapter plate 3, a shielding film can be set on the surface of the adapter plate 3 facing away from the substrate 1, and ensure that the shielding film does not cover the third shielding segment 73 to play a shielding role.

[0179] In some implementations, the number of the adapter board 3 may be one or more, and the packaging method of the adapter board 3 may also be:

[0180] S115 : welding the adapter board 3 to one side surface of the substrate 1 through the first ground pad 31 , and the adapter board 3 is distributed at the edge of the substrate 1 .

[0181] Multiple adapter plates 3 can be welded on the basis of S104. The specific welding method can refer to the description of S104. Multiple adapter plates 3 can be arranged along the edge of the substrate 1. The number and specific arrangement position of the adapter plates 3 can be designed according to actual conditions, and this application does not make specific restrictions.

[0182] In some implementations, in the case where packaging is required on both sides of the substrate 1, see Fig.21 , is a schematic diagram of another chip packaging method provided in an embodiment of the present application. Fig. 22 , is an exploded view of another chip packaging method provided in an embodiment of the present application. The specific packaging method may include the following steps:

[0183] S116: Print solder paste on the other surface of the substrate 1.

[0184] In a specific implementation, the substrate 1 may be baked in advance before printing the solder paste.

[0185] When soldering and packaging devices, solder can help with flux.

[0186] S117 : soldering or bonding the second crystal device 9 to the other surface of the substrate 1 .

[0187] from Fig.12 As can be seen in the figure, the second crystal device 9 can be set on the surface of the substrate 1 by welding, and can be directly welded on the substrate 1, such as the second crystal device 9a. It can also be welded on the substrate 1 by BGA solder balls, such as the second crystal device 9b. The second crystal device 9 can also be set on the surface of the substrate 1 by bonding, such as the second crystal device 9c. In this case, a bonding wire can be tied between the second crystal device 9c and the substrate 1 to electrically connect the second crystal device 9c to the substrate 1.

[0188] In a specific implementation, the second crystal device 9a and the second crystal device 9b to be welded can be welded on the substrate 1 by a reflow welding process, and then plasma cleaning is performed to remove the residual solder paste on the surface of the substrate 1. Glue is dispensed at the position where the second crystal device 9c is packaged, and then the third crystal device 9c is bonded to the substrate 1, and then bonding wires are made.

[0189] S118 : coating a molding compound on the surface of the second crystal device 9 to form a second molding layer 10 .

[0190] In a specific implementation, before preparing the second plastic encapsulation layer 10 , plasma cleaning should be performed to remove residual glue and the like on the surface of the substrate 1 .

[0191] The second plastic encapsulation layer 10 needs to be cured for a period of time. After curing, the second plastic encapsulation layer 10 can wrap the second crystal device 9 to play the role of insulation, heat dissipation and dust prevention, and can prevent the second crystal device 9 from shifting or being damaged when subjected to external force. The second plastic encapsulation layer 10 can be formed by a plastic encapsulation material and formed by a plastic encapsulation jig. The plastic encapsulation material can include epoxy resin and silicone resin materials.

[0192] In some implementations, when performing double-sided packaging, after completing the preparation of the second crystal device 9 and the second plastic packaging layer 10, the preparation of the first crystal device 2, the first part 41, the second part 42 and the first shielding metal 6 can be carried out. The specific preparation operations can refer to S102, S103, S104, S105 and S106.

[0193] Continue to see Fig.21 Before soldering the adapter board 3 , in addition to preparing the second shielding metal 7 on the adapter board 3 , a solder resist layer 5 should also be prepared on the surface of the second ground pad 33 .

[0194] S119 : After the second plastic encapsulation layer 10 is solidified, metal is covered on the surface of the second plastic encapsulation layer 10 and the side surface of the substrate 1 to form a third shielding metal 11 .

[0195] In a specific implementation, the third shielding metal 11 can be covered by a spraying or sputtering process.

[0196] Before preparing the third shielding metal 11 , a tinning operation may be performed on the second grounding pad 33 of the adapter board 3 .

[0197] S120 : preparing a grounding metal layer 12 inside the substrate 1 , and the grounding metal layer 12 extends from the inside of the substrate 1 to the side surface of the substrate 1 and is connected to the third shielding metal 11 .

[0198] In a specific implementation, this step can be performed simultaneously when the substrate 1 is prepared.

[0199] In some implementations, the third shielding metal 11 may also cover the side of the second portion 42 facing away from the first crystal device 9 and the side of the adapter plate 1 facing away from the first crystal device 9. The specific packaging steps are as follows:

[0200] S121 : Covering the side of the second portion 42 facing away from the first crystal device 9 and the side of the adapter plate 3 facing away from the first crystal device 2 with metal to form a third shielding metal 11 .

[0201] In some implementations, when packaging electronic devices using the chip packaging method provided in the embodiments of the present application, two or more chips can be packaged at one time to form a whole of two or more chips. Under the premise of ensuring chip performance and quality, the two or more chips can be singulated to form a single chip. For example, Fig. 22 In the decomposition steps shown, the singulation operation may be performed before S119.

[0202] It should be understood that Fig. 22 Only the situation that the first shielding metal 6 is grounded through the first shielding segment 71, the second shielding segment 72 and the third shielding segment 73 is shown, and the situation that the first shielding metal 6 is grounded through other devices is not described in detail.

[0203] In some embodiments, the electronic devices provided in the embodiments of the present application may be some miniaturized devices, such as headphones, smart bracelets, and smart watches.

[0204] The technical solution provided by the embodiment of the present application can achieve mutual shielding between components without increasing the layout space, and can also prevent the leakage of electromagnetic signals. At the same time, when the chip needs double-sided packaging, the technical solution provided by the present application can also achieve electromagnetic signal shielding. When achieving shielding performance, there is no need to add other components, the process is simple, and the integration is high.

[0205] The above specific implementation methods further explain in detail the purpose, technical solutions and beneficial effects of the embodiments of the present application. It should be understood that the above are only specific implementation methods of the embodiments of the present application and are not used to limit the protection scope of the embodiments of the present application. Any modifications, equivalent substitutions, improvements, etc. made on the basis of the technical solutions of the embodiments of the present application should be included in the protection scope of the embodiments of the present application.

Claims

1. A TWS headset, characterized in that: include: case; A substrate is provided in the housing: A first crystal device and an adapter plate are disposed on one side surface of the substrate, and the adapter plate is provided with a first grounding pad, a second grounding pad and an interconnection via; the first grounding pad is disposed on the surface of the adapter plate facing the substrate, and the adapter plate is electrically connected to the substrate through the first grounding pad, so that the adapter plate is grounded; the second grounding pad is disposed on the surface of the adapter plate facing away from the substrate, and one end of the interconnection via is connected to the first grounding pad, and the other end is connected to the second grounding pad; A first portion of a first plastic encapsulation layer is disposed on the surface of the first crystal device, a second portion of the first plastic encapsulation layer is disposed between the adapter plate and the substrate, and the first portion and the second portion are an integrated structure; The substrate is also provided with a third grounding pad, and the third grounding pad is arranged at the contact point between the first shielding metal and the substrate, the surface of the first part is covered with the first shielding metal, the first end of the first shielding metal is connected to the third grounding pad, the second end of the first shielding metal extends from the surface of the first part to the surface of the adapter board facing away from the substrate, and the first shielding metal is grounded.

2. The TWS headset according to claim 1, characterized in that: The first shielding metal is electrically connected to the first ground pad.

3. The TWS headset according to claim 2, characterized in that: The first shielding metal is connected to the interconnection via, so that the first shielding metal is connected to the first ground pad through the interconnection via.

4. The TWS headset according to any one of claims 1 to 3, characterized in that: The second end of the first shielding metal is connected to the second grounding pad, the interconnection via and the first grounding pad.

5. The TWS headset according to any one of claims 1 to 4, characterized in that: Also includes: a second shielding metal, the second shielding metal comprising a first shielding segment and a second shielding segment; The first shielding segment is arranged on the side of the adapter plate facing the first crystal device, and one end of the first shielding segment away from the substrate is connected to the first shielding metal; The second shielding segment is arranged on a surface of the adapter plate facing the substrate, one end of the second shielding segment is connected to the first shielding segment, and the other end of the second shielding segment is connected to the first ground pad.

6. The TWS headset according to claim 5, characterized in that: The second shielding metal also includes a third shielding segment, which is arranged on the surface of the adapter board facing away from the substrate, one end of the third shielding segment is connected to the first shielding segment, and the other end extends a certain distance toward the direction close to the second grounding pad, and the third shielding segment is connected to the first shielding metal.

7. The TWS headset according to any one of claims 1 to 6, characterized in that: The second end of the first shielding metal covers a portion of a surface of the transfer board facing away from the substrate.

8. The TWS headset according to any one of claims 1 to 6, characterized in that: The adapter plates are distributed on the edge of the substrate.

9. The TWS headset according to claim 5, characterized in that: Also includes: a second crystal device, the second crystal device being arranged on another surface of the substrate; A second plastic encapsulation layer, wherein the second plastic encapsulation layer is arranged on the surface of the second crystal device; A third shielding metal, the third shielding metal covering the surface of the second plastic packaging layer and the side surface of the substrate; A grounding metal layer is located inside the substrate and extends from the inside of the substrate to the side of the substrate and is connected to the third shielding metal.

10. The TWS headset according to claim 9, characterized in that: The third shielding metal further covers the side of the second portion facing away from the first crystal device, and also covers the side of the transfer board facing away from the first crystal device.

11. The TWS headset according to any one of claims 1 to 6, characterized in that: The first crystal device comprises: One or more of NOR flash memory, MOS tube, SoC chip, decoding circuit, charging chip, RLC device, crystal, Bluetooth chip, RF chip, WiFi chip, NFC chip and sensor.

12. The TWS headset according to claim 9 or 10, characterized in that: The second crystal device comprises: One or more of NOR flash memory, MOS tube, SoC chip, decoding circuit, charging chip, RLC device, crystal, Bluetooth chip, RF chip, WiFi chip, NFC chip and sensor.

13. The TWS headset according to claim 9, characterized in that: The first shielding metal, the second shielding metal and the third shielding metal are formed by spraying or sputtering.

14. The TWS headset according to any one of claims 1 to 6, characterized in that: The transfer board includes a plurality of interconnection vias, and the first shielding metal extends from a surface of the first portion to a surface of the transfer board facing away from the substrate, and is connected to a portion of the plurality of interconnection vias.

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