AMB ceramic copper clad plate manufacturing method

Abstract

The application discloses a kind of AMB ceramic copper-clad plate manufacturing methods, it is related to electronic material manufacturing field, and specific preparation steps include steps 1, material preparation: with the aluminum nitride ceramic of adding rare earth element cerium as base ceramic layer material;With zirconium powder and titanium nitride powder as raw material to make composite interface material;With copper, cobalt and gallium as raw material to make metal activation layer material;Step 2, ceramic base layer pretreatment;Step 3, composite interface coating;Step 4, metal activation layer deposition;Step 5, copper layer lamination;Step 6, post-processing.The AMB ceramic copper-clad plate manufacturing method described in the application, by introducing new ceramic material, composite interface material, metal activation layer material and unique process, significantly enhance the bonding performance of copper and ceramic, reduce process temperature requirement, improve product comprehensive quality and production efficiency, provide innovative solutions for electronic material field.

Description

Technical Field

[0001] This invention relates to the field of electronic materials manufacturing, and in particular to a method for manufacturing AMB ceramic copper-clad laminates. Background Technology

[0002] With the rapid development of electronic technology, the shortcomings of traditional copper-clad laminates in bonding copper and ceramic have become increasingly apparent. Existing processes often require high-temperature operation, which is not only energy-intensive but also prone to causing ceramic performance degradation and unstable bonding interfaces, severely hindering the performance improvement and miniaturization of electronic devices. Therefore, developing new manufacturing methods to overcome these shortcomings has become an urgent task.

[0003] Patent CN117042340A discloses a method for graphic engraving of a ceramic copper-clad laminate, thereby obtaining a higher quality ceramic copper-clad laminate manufacturing method, including the following steps: a) Material preparation: The ceramic layer and the copper layer are welded together as a whole by a brazing layer; b) Graphic engraving: A reserved copper layer is set between the bottom of the processing tank and the brazing layer closest to the bottom of the processing tank, and the bottom of the reserved copper layer is the reserved brazing layer; c) Chemical etching protection treatment: First, a photosensitive dry film is applied to protect the outermost copper layer; d) Reserved copper layer treatment: The reserved copper layer is processed away by chemical copper etching to obtain the exposed reserved brazing layer. After processing, the protective photosensitive dry film is removed; e) Reserved brazing layer treatment: The exposed reserved brazing layer is etched away by chemical etching to finally obtain the exposed ceramic layer.

[0004] This method not only effectively protects the final exposed ceramic layer, but also effectively processes multilayer ceramic copper-clad laminates. However, the prepared ceramic copper-clad laminates have significant room for improvement in terms of thermal conductivity, bonding strength, and insulation performance. Summary of the Invention

[0005] The main objective of this invention is to provide a method for manufacturing AMB ceramic copper-clad laminates, which introduces novel ceramic materials, composite interface materials, metal activation layer materials, and unique processes to significantly enhance the bonding performance between copper and ceramics, reduce process temperature requirements, improve overall product quality and production efficiency, and provide an innovative solution for the field of electronic materials.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0007] A method for manufacturing AMB ceramic copper-clad laminate, the specific steps of which are as follows:

[0008] Step 1, Material Preparation: Aluminum nitride ceramic with added rare earth element cerium is used as the base ceramic layer material; zirconium powder and titanium nitride powder are used as raw materials to prepare composite interface materials; copper, cobalt and gallium are used as raw materials to prepare metal activation layer materials;

[0009] Step 2, Ceramic substrate pretreatment: Clean the cerium-containing aluminum nitride ceramic sheet with plasma for 10-15 minutes to remove impurities, organic matter and oxide layer, and then vacuum dry at 120℃-150℃ for 1-2 hours to ensure that the ceramic sheet is clean and dry, providing a good substrate for subsequent processes;

[0010] Step 3, Composite Interface Coating: At a suitable temperature, a composite interface material film is coated on the surface of the ceramic sheet using pulsed laser deposition technology with a laser energy density of 2-4 J / cm², a pulse frequency of 10-15 Hz, for 20-30 minutes.

[0011] Step 4, Deposition of metal activation layer: Ion beam assisted deposition is used with ion beam energy of 50-80keV, beam current density of 10-15μA / cm² and deposition rate of 0.05-0.2μm / min to deposit a metal activation layer on the composite interface layer;

[0012] Step 5, Copper Layer Bonding: Place the boron-treated oxygen-free copper sheet onto the deposited activated ceramic sheet, at a depth of 1×10⁻ 5 -1×10⁻ 6 Under ultra-high vacuum, hot pressing at 450℃-550℃ for 40-70 minutes;

[0013] Step 6, Post-processing: After hot pressing, the ceramic copper-clad laminate is first kept at 350℃-400℃ for 1-1.5h, then heated to 450℃-500℃ and kept for 1.5-2h, and finally slowly cooled to room temperature for gradient annealing. After that, the copper layer is electrochemically polished for 3-5 minutes with a 3:1 mixture of phosphoric acid and sulfuric acid and a voltage of 2-3V to form an ultra-smooth surface.

[0014] Preferably, in step 1, the specific preparation method of aluminum nitride ceramic with added rare earth element cerium is as follows:

[0015] Step 11: Accurately weigh the required mass of high-purity aluminum nitride powder, and calculate the accurate mass of cerium additive based on the predetermined total ceramic volume and the cerium addition ratio of 0.1%-0.5%.

[0016] Step 12: Place the weighed aluminum nitride powder and cerium additive into the ball mill jar of a planetary ball mill. Agate balls are used as grinding balls in the ball mill. The ball-to-material ratio is set between 5:1 and 10:1. Add 5%-10% of the total mass of powder in anhydrous ethanol as a dispersant to the ball mill jar, and then perform ball milling.

[0017] Step 13: After ball milling, remove the mixed powder from the ball mill jar and place it in a vacuum drying oven for drying. Set the drying temperature to 80℃-100℃, maintain the vacuum degree at 0.05-0.1MPa, and dry for 6-10 hours to completely remove the dispersant from the powder.

[0018] Step 14: The dried powder is sieved through a 200-400 mesh sieve to obtain the cerium-containing aluminum nitride ceramic powder raw material.

[0019] Preferably, in step 1, the specific method for preparing the composite interface material using zirconium powder and titanium nitride powder as raw materials is as follows: submicron zirconium powder and titanium nitride powder are mixed in a mass ratio of 2:3-3:4, and ball-milled in a planetary ball mill at 400-600 r / min for 15-20 h. 0.2%-0.4% of PEG-b-PS dispersant by mass is added to prevent agglomeration. Then, the resulting composite powder is mixed with 8%-12% of aluminum phosphate binder by mass to form a film.

[0020] Preferably, in step 1, the specific method for preparing the metal activation layer material using copper, cobalt, and gallium as raw materials is as follows: prepare copper with a mass of 65%-75%, cobalt with a mass of 12%-18%, and gallium with a mass of 10%-15%, microwave melt at 1100℃-1200℃ for 1.5-2 hours, and then cast it into a 3-8μm thin sheet to obtain the metal activation layer.

[0021] Preferably, in step 2, the vacuum drying temperature is 120-150℃ and the vacuum drying time is 1-2 hours.

[0022] Preferably, in step 3, the temperature is 200℃-300℃ when coating the ceramic sheet surface with a composite interface material film using pulsed laser deposition technology.

[0023] More preferably, the thickness of the film made of the composite interface material is 8-15 μm.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] 1. This invention significantly optimizes the sintering process of aluminum nitride ceramics by adding 0.1%-0.5% rare earth cerium (Ce). The introduction of cerium promotes grain refinement, resulting in a more uniform and dense microstructure. This directly enhances the mechanical toughness of the ceramic, enabling it to better withstand mechanical stresses during subsequent processing and use. For example, under thermal cycling or mechanical impact conditions, cerium-containing aluminum nitride ceramics exhibit a significantly lower probability of cracking and breakage compared to unmodified ceramics. Simultaneously, thermal stability is also improved, maintaining good structural integrity and performance stability at high temperatures, effectively preventing material failure due to thermal stress, thus providing a more reliable foundation support layer for the entire ceramic copper-clad laminate.

[0026] 2. The composite interface material prepared by mixing submicron zirconium powder and titanium nitride powder in a mass ratio of 2:3-3:4 in this invention exhibits excellent performance in subsequent bonding with ceramic and copper layers. After prolonged ball milling in a planetary ball mill and the action of a dispersant, the raw materials are uniformly mixed and agglomeration is effectively suppressed. The film prepared by mixing with aluminum phosphate binder has good formability and adhesion. After being deposited on the ceramic surface, it can form a tight chemical bond with the ceramic. At the same time, its own metallic phase component enhances the affinity with the copper layer, effectively improving the bonding interface performance between copper and ceramic, significantly increasing the bonding strength, reducing the risk of interface delamination, and enhancing the overall reliability of the product.

[0027] 3. This invention utilizes a metal activation layer material composed of 65%-75% copper, 12%-18% cobalt, and 10%-15% gallium. After microwave melting and rapid solidification, this material plays a crucial activation role between the ceramic and copper layers. Microwave melting allows for rapid and uniform mixing of the three metals at relatively low temperatures (1100℃-1200℃), shortening melting time and reducing metal segregation. Rapid solidification refines the grain structure and improves material properties. After deposition on the composite interface layer, cobalt and gallium promote chemical reactions between the metal activation layer and the ceramic and copper at lower temperatures, forming a stable metallurgical bond. This effectively reduces the processing temperature required for copper-ceramic bonding, while simultaneously enhancing bonding strength and stability, thus improving product quality and production efficiency. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0029] During their research, the inventors discovered that rare earth elements possess unique electronic structures and chemical activities, enabling them to act as both grain boundary migration inhibitors and grain growth promoters during ceramic sintering. Cerium was chosen due to its significant effectiveness in improving ceramic properties and its relatively reasonable cost. By adding a small amount, its interaction with the aluminum nitride matrix at high temperatures alters grain growth kinetics, achieving grain refinement and structural optimization, thereby improving the overall performance of the ceramic and meeting the requirements of copper-clad laminates for high strength and high stability of the ceramic substrate.

[0030] Furthermore, zirconium and titanium nitride possess excellent chemical reactivity and mechanical properties, respectively, and their combination can exert a synergistic effect. Submicron-sized powders were chosen to increase specific surface area, improve reactivity, and enhance bonding. Ball milling ensures uniform mixing, while a binder guarantees film quality. Through careful design of raw material ratios and preparation processes, the aim is to construct a transition layer that can both tightly bond with ceramics and promote metallurgical bonding with copper layers, solving the problem of poor copper-ceramic bonding in traditional processes and improving interfacial bonding quality and stability.

[0031] The inventors also discovered that, based on research into the chemical properties and interactions of metallic elements, copper was chosen as the main component to ensure good electrical conductivity, while the addition of cobalt and gallium leverages their unique advantages in promoting metal-ceramic bonding reactions. The use of microwave melting and rapid solidification techniques aims to overcome the shortcomings of traditional melting processes, achieving efficient and high-quality material preparation to meet the need for strong bonding at lower temperatures, reducing the negative impact of high temperatures on material properties, and driving the development of copper-clad ceramic laminate manufacturing processes towards lower temperatures and higher efficiency.

[0032] The present invention will be further disclosed below with reference to embodiments:

[0033] Example 1

[0034] In this embodiment, a method for manufacturing an AMB ceramic copper-clad laminate includes the following specific steps:

[0035] Step 1, Material Preparation: Aluminum nitride ceramic with added rare earth element cerium is used as the base ceramic layer material; zirconium powder and titanium nitride powder are used as raw materials to prepare composite interface materials; copper, cobalt and gallium are used as raw materials to prepare metal activation layer materials;

[0036] The specific preparation method of aluminum nitride ceramics with added rare earth element cerium is as follows:

[0037] Step 11: Accurately weigh the required mass of high-purity aluminum nitride powder, and calculate the accurate mass of cerium additive based on the predetermined total ceramic volume and the cerium addition ratio of 0.1%.

[0038] Step 12: Place the weighed aluminum nitride powder and cerium additive into the ball mill jar of a planetary ball mill. Agate balls are used as grinding balls in the ball mill, and the ball-to-material ratio is set to 5:1. Add 5% anhydrous ethanol of the total mass of powder as a dispersant to the ball mill jar, and then perform ball milling.

[0039] Step 13: After ball milling, remove the mixed powder from the ball mill jar and place it in a vacuum drying oven for drying. Set the drying temperature to 80℃, maintain the vacuum degree at 0.05MPa, and dry for 6 hours to completely remove the dispersant from the powder.

[0040] Step 14: The dried powder is sieved through a 400-mesh sieve to obtain the cerium-containing aluminum nitride ceramic powder raw material;

[0041] The specific method for preparing composite interface materials using zirconium powder and titanium nitride powder as raw materials is as follows: submicron zirconium powder and titanium nitride powder are mixed in a mass ratio of 2:3, ball-milled in a planetary ball mill at 400 / min for 15 hours, and 0.2% of PEG-b-PS dispersant by mass is added to prevent agglomeration. Then, the resulting composite powder is mixed with 8% of aluminum phosphate binder by mass to form a film with a thickness of 8μm.

[0042] Furthermore, the specific method for preparing the metal activation layer material using copper, cobalt, and gallium as raw materials is as follows: prepare 75% copper, 12% cobalt, and 13% gallium by mass, microwave melt at 1200℃ for 1.5 hours, and then cast into a 3-8μm thin film to obtain the metal activation layer.

[0043] Step 2, Ceramic substrate pretreatment: Clean the cerium-containing aluminum nitride ceramic sheet with plasma for 15 minutes to remove impurities, organic matter and oxide layer, and then vacuum dry at 120℃ for 2 hours to ensure that the ceramic sheet is clean and dry, providing a good substrate for subsequent processes;

[0044] Step 3, Composite Interface Coating: Using pulsed laser deposition technology with a laser energy density of 2J / cm² and a pulse frequency of 15Hz, a composite interface material film is coated on the surface of the ceramic sheet for 20 minutes, while the temperature is controlled at 300℃.

[0045] Step 4, Deposition of metal activation layer: Ion beam assisted deposition is used with 50keV ion beam energy, 15μA / cm² beam current density and 0.2μm / min deposition rate to deposit a metal activation layer on the composite interface layer;

[0046] Step 5, Copper Layer Bonding: Place the boron-treated oxygen-free copper sheet onto the deposited activated ceramic sheet, at a depth of 1×10⁻ 5 Pa ultra-high vacuum 550℃ hot pressing bonding for 50 minutes;

[0047] Step 6, Post-processing: After hot pressing, the ceramic copper-clad laminate is first kept at 350℃ for 1 hour, then heated to 500℃ and kept for 2 hours, and finally slowly cooled to room temperature for gradient annealing to effectively eliminate internal stress. Afterwards, the copper layer is electrochemically polished for 5 minutes with a 3:1 mixture of phosphoric acid and sulfuric acid and a 3V voltage to form an ultra-smooth surface.

[0048] Example 2

[0049] In this embodiment, a method for manufacturing an AMB ceramic copper-clad laminate includes the following specific steps:

[0050] Step 1, Material Preparation: Aluminum nitride ceramic with added rare earth element cerium is used as the base ceramic layer material; zirconium powder and titanium nitride powder are used as raw materials to prepare composite interface materials; copper, cobalt and gallium are used as raw materials to prepare metal activation layer materials;

[0051] The specific preparation method of aluminum nitride ceramics with added rare earth element cerium is as follows:

[0052] Step 11: Accurately weigh the required mass of high-purity aluminum nitride powder, and calculate the accurate mass of cerium additive based on the predetermined total ceramic volume and the cerium addition ratio of 0.3%.

[0053] Step 12: Place the weighed aluminum nitride powder and cerium additive into the ball mill jar of a planetary ball mill. Agate balls are used as grinding balls in the ball mill, and the ball-to-material ratio is set to 7:1. Add 7% of the total mass of powder in anhydrous ethanol as a dispersant to the ball mill jar, and then perform ball milling.

[0054] Step 13: After ball milling, remove the mixed powder from the ball mill jar and place it in a vacuum drying oven for drying. Set the drying temperature to 80℃, maintain the vacuum degree at 0.1MPa, and dry for 10 hours to completely remove the dispersant from the powder.

[0055] Step 14: The dried powder is sieved through a 300-mesh sieve to obtain the cerium-containing aluminum nitride ceramic powder raw material;

[0056] The specific method for preparing composite interface materials using zirconium powder and titanium nitride powder as raw materials is as follows: submicron zirconium powder and titanium nitride powder are mixed in a mass ratio of 3:4, ball-milled in a planetary ball mill at 600 r / min for 20 h, and 0.4% of PEG-b-PS dispersant by mass is added to prevent agglomeration. Then, the resulting composite powder is mixed with 10% of aluminum phosphate binder by mass to form a film with a thickness of 10 μm.

[0057] Furthermore, the specific method for preparing the metal activation layer material using copper, cobalt and gallium as raw materials is as follows: prepare 70% copper, 18% cobalt and 12% gallium by mass, microwave melt at 1200℃ for 2 hours, and then cast into a 5μm thin film to obtain the metal activation layer.

[0058] Step 2, Ceramic substrate pretreatment: Clean the cerium-containing aluminum nitride ceramic sheet with plasma for 15 minutes to remove impurities, organic matter and oxide layer, and then vacuum dry at 150℃ for 2 hours to ensure that the ceramic sheet is clean and dry, providing a good substrate for subsequent processes;

[0059] Step 3, Composite Interface Coating: Using pulsed laser deposition technology with a laser energy density of 3J / cm² and a pulse frequency of 15Hz, a composite interface material film is coated on the surface of the ceramic sheet for 30 minutes, while the temperature is controlled at 300℃.

[0060] Step 4, Deposition of metal activation layer: Ion beam assisted deposition is used with 80keV ion beam energy, 15μA / cm² beam current density and 0.2μm / min deposition rate to deposit a metal activation layer on the composite interface layer;

[0061] Step 5, Copper Layer Bonding: Place the boron-treated oxygen-free copper sheet onto the deposited activated ceramic sheet, at a depth of 1×10⁻ 5 Under ultra-high vacuum, hot-pressed at 550℃ for 60 minutes;

[0062] Step 6, Post-processing: After hot pressing, the ceramic copper-clad laminate is first kept at 400℃ for 1.5h, then heated to 500℃ and kept at 500℃ for 2h, and finally slowly cooled to room temperature for gradient annealing to effectively eliminate internal stress. Afterwards, the copper layer is electrochemically polished for 5 minutes with a 3:1 mixture of phosphoric acid and sulfuric acid and a 3V voltage to form an ultra-smooth surface.

[0063] Example 3

[0064] In this embodiment, a method for manufacturing an AMB ceramic copper-clad laminate includes the following specific steps:

[0065] Step 1, Material Preparation: Aluminum nitride ceramic with added rare earth element cerium is used as the base ceramic layer material; zirconium powder and titanium nitride powder are used as raw materials to prepare composite interface materials; copper, cobalt and gallium are used as raw materials to prepare metal activation layer materials;

[0066] The specific preparation method of aluminum nitride ceramics with added rare earth element cerium is as follows:

[0067] Step 11: Accurately weigh the required mass of high-purity aluminum nitride powder, and calculate the accurate mass of cerium additive based on the predetermined total ceramic volume and the cerium addition ratio of 0.5%.

[0068] Step 12: Place the weighed aluminum nitride powder and cerium additive into the ball mill jar of a planetary ball mill. Agate balls are used as grinding balls in the ball mill, and the ball-to-material ratio is set to 10:1. Add 10% of the total mass of powder in anhydrous ethanol as a dispersant to the ball mill jar, and then perform ball milling.

[0069] Step 13: After ball milling, remove the mixed powder from the ball mill jar and place it in a vacuum drying oven for drying. Set the drying temperature to 100℃, maintain the vacuum degree at 0.1MPa, and dry for 10 hours to completely remove the dispersant from the powder.

[0070] Step 14: The dried powder is sieved through a 400-mesh sieve to obtain the cerium-containing aluminum nitride ceramic powder raw material;

[0071] The specific method for preparing composite interface materials using zirconium powder and titanium nitride powder as raw materials is as follows: submicron zirconium powder and titanium nitride powder are mixed in a mass ratio of 3:4, ball-milled in a planetary ball mill at 600 r / min for 20 h, and 0.4% of PEG-b-PS dispersant by mass is added to prevent agglomeration. Then, the resulting composite powder is mixed with 12% of aluminum phosphate binder by mass to form a film with a thickness of 15 μm.

[0072] Furthermore, the specific method for preparing the metal activation layer material using copper, cobalt and gallium as raw materials is as follows: prepare copper with a mass of 69%, cobalt and gallium with a mass of 18%, and melt them in a microwave at 1200°C for 2 hours, and then cast them into an 8μm thin film to obtain the metal activation layer.

[0073] Step 2, Ceramic substrate pretreatment: Clean the cerium-containing aluminum nitride ceramic sheet with plasma for 15 minutes to remove impurities, organic matter and oxide layer, and then vacuum dry at 150℃ for 2 hours to ensure that the ceramic sheet is clean and dry, providing a good substrate for subsequent processes;

[0074] Step 3, Composite Interface Coating: Using pulsed laser deposition technology with a laser energy density of 4 J / cm² and a pulse frequency of 15 Hz, a composite interface material film is coated on the surface of the ceramic sheet for 30 minutes, while the temperature is controlled at 300℃.

[0075] Step 4, Deposition of metal activation layer: Ion beam assisted deposition is used with 80keV ion beam energy, 10-15μA / cm² beam current density and 0.2μm / min deposition rate to deposit a metal activation layer on the composite interface layer;

[0076] Step 5, Copper Layer Bonding: Place the boron-treated oxygen-free copper sheet onto the deposited activated ceramic sheet, at a depth of 1×10⁻ 5 Under ultra-high vacuum, hot pressing at 550℃ for 70 minutes;

[0077] Step 6, Post-processing: After hot pressing, the ceramic copper-clad laminate is first kept at 350℃ for 1 hour, then heated to 500℃ and kept for 2 hours, and finally slowly cooled to room temperature for gradient annealing to effectively eliminate internal stress. Afterwards, the copper layer is electrochemically polished for 5 minutes with a 3:1 mixture of phosphoric acid and sulfuric acid and a 3V voltage to form an ultra-smooth surface.

[0078] Comparative Example 1

[0079] The traditional high-temperature brazing method was used to fabricate copper-clad ceramic plates. No new materials or processes were found. Copper and ceramic were brazed at 850℃ using silver-based brazing filler metal to prepare samples. The materials and processes disclosed in this invention were compared with those of the traditional method.

[0080] Comparative Example 2

[0081] Compared with Example 1, this example omits the composite interface material step, while all other steps remain the same. Samples are prepared to investigate the effect of the composite interface material on the bonding performance.

[0082] Comparative Example 3

[0083] Compared with Example 1, no metal activation layer material was used; instead, copper and ceramic were directly hot-pressed to prepare samples, and the effect of the metal activation layer was analyzed.

[0084] For the samples in Examples 1-3 and Comparative Examples 1-3, performance tests were conducted as follows: Tensile bonding strength was tested using a universal testing machine according to GB / T5270-2020; thermal conductivity was determined using the laser scintillation method according to GB / T3651-2008; and the insulation performance of the material was tested by measuring the ceramic layer insulation resistance using a high-resistance meter according to GB / T1410-2006. The specific test results are shown in the table below:

[0085]

[0086] As can be seen from the table above, the insulation resistance of the samples in Examples 1-3 is extremely outstanding. For example, the insulation resistance of Example 3 is as high as 1.6×10¹²Ω・cm. Such a high insulation resistance value fully demonstrates that these samples can effectively prevent current leakage in electronic equipment applications, providing a solid guarantee for the stable operation of electronic equipment. This fully meets the strict requirements of electronic equipment for insulation performance and truly reflects the good insulation properties of the AMB ceramic copper-clad laminate prepared by this invention.

[0087] Regarding bonding strength, the bonding strengths of Examples 1-3 are all within the relatively high range of 55.6-56.7 MPa. In contrast, the sample of Comparative Example 1, prepared using the traditional high-temperature brazing method, has a bonding strength of only 32.5 MPa; the sample of Comparative Example 2, which omits the composite interface material step, has a bonding strength of 41.4 MPa; and the sample of Comparative Example 3, which does not use a metal activation layer material, has a bonding strength of 45.7 MPa. Clearly, the bonding strength of the embodiments of the present invention far exceeds that of the comparative examples, strongly demonstrating the outstanding effect of optimizing processes and materials in improving bonding performance.

[0088] Regarding thermal conductivity, the samples in the examples also exhibited significant advantages. The thermal conductivity of Example 1 was 280 W / (m·K), Example 2 was 279 W / (m·K), and Example 3 was 273 W / (m·K). In contrast, the thermal conductivity of the samples in Comparative Examples 1-3 prepared by conventional processes was only between 228 W / (m·K) and 257 W / (m·K). This fully demonstrates that the new method of the present invention has significant advantages in maintaining high thermal conductivity and can better meet the needs of electronic devices in terms of heat dissipation, etc.

[0089] Based on the test results of key indicators such as bonding strength, thermal conductivity, and insulation performance, the optimized AMB ceramic copper-clad laminate manufacturing method demonstrates superior performance in all aspects. It successfully overcomes a series of challenges inherent in traditional processes, such as insufficient bonding strength, limited thermal conductivity, and difficulty in guaranteeing insulation performance. This provides a reliable and innovative technological path for the development of the electronic materials industry, and is expected to be widely applied and promoted in the future field of electronic materials, driving the entire industry towards higher performance and higher efficiency.

[0090] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of this invention is defined by the appended claims and their equivalents.

Claims

1. A method for manufacturing an AMB ceramic copper-clad laminate, characterized in that, The specific steps are as follows: Step 1, Material Preparation: Aluminum nitride ceramic with added rare earth element cerium is used as the base ceramic layer material; zirconium powder and titanium nitride powder are used as raw materials to prepare composite interface materials; copper, cobalt and gallium are used as raw materials to prepare metal activation layer materials; Step 2, Ceramic substrate pretreatment: Clean the cerium-containing aluminum nitride ceramic sheet with plasma for 10-15 minutes to remove impurities, organic matter and oxide layer, and then vacuum dry at 120℃-150℃ for 1-2 hours to ensure that the ceramic sheet is clean and dry, providing a good substrate for subsequent processes; Step 3, Composite Interface Coating: At a suitable temperature, a composite interface material film is coated on the surface of the ceramic sheet using pulsed laser deposition technology with a laser energy density of 2-4 J / cm², a pulse frequency of 10-15 Hz, for 20-30 minutes. Step 4, Deposition of metal activation layer: Ion beam assisted deposition is used with ion beam energy of 50-80keV, beam current density of 10-15μA / cm² and deposition rate of 0.05-0.2μm / min to deposit a metal activation layer on the composite interface layer; Step 5, Copper Layer Bonding: Place the boron-treated oxygen-free copper sheet onto the deposited activated ceramic sheet, at a depth of 1×10⁻ 5 -1×10⁻ 6 Under ultra-high vacuum, hot pressing at 450℃-550℃ for 40-70 minutes; Step 6, Post-processing: After hot pressing, the ceramic copper-clad laminate is first kept at 350℃-400℃ for 1-1.5h, then heated to 450℃-500℃ and kept for 1.5-2h, and finally slowly cooled to room temperature for gradient annealing. After that, the copper layer is electrochemically polished for 3-5 minutes with a 3:1 mixture of phosphoric acid and sulfuric acid and a voltage of 2-3V to form an ultra-smooth surface.

2. The method for manufacturing AMB ceramic copper-clad laminate according to claim 1, characterized in that: The specific preparation method of aluminum nitride ceramics with added rare earth element cerium in step 1 is as follows: Step 11: Accurately weigh the required mass of high-purity aluminum nitride powder, and calculate the accurate mass of cerium additive based on the predetermined total ceramic volume and the cerium addition ratio of 0.1%-0.5%. Step 12: Place the weighed aluminum nitride powder and cerium additive into the ball mill jar of a planetary ball mill. Agate balls are used as grinding balls in the ball mill. The ball-to-material ratio is set between 5:1 and 10:

1. Add 5%-10% of the total mass of powder in anhydrous ethanol as a dispersant to the ball mill jar, and then perform ball milling. Step 13: After ball milling, remove the mixed powder from the ball mill jar and place it in a vacuum drying oven for drying. Set the drying temperature to 80℃-100℃, maintain the vacuum degree at 0.05-0.1MPa, and dry for 6-10 hours to completely remove the dispersant from the powder. Step 14: The dried powder is sieved through a 200-400 mesh sieve to obtain cerium-containing aluminum nitride ceramic powder raw material.

3. The method for manufacturing AMB ceramic copper-clad laminate according to claim 1, characterized in that: In step 1, the specific method for preparing the composite interface material using zirconium powder and titanium nitride powder as raw materials is as follows: submicron zirconium powder and titanium nitride powder are mixed in a mass ratio of 2:3-3:4, and ball-milled in a planetary ball mill at 400-600 r / min for 15-20 h. 0.2%-0.4% of PEG-b-PS dispersant by total mass is added to prevent agglomeration. Then, the resulting composite powder is mixed with 8%-12% of aluminum phosphate binder by total mass to form a film.

4. The method for manufacturing AMB ceramic copper-clad laminate according to claim 1, characterized in that: In step 1, the specific method for preparing the metal activation layer material using copper, cobalt, and gallium as raw materials is as follows: prepare copper with a mass of 65%-75%, cobalt with a mass of 12%-18%, and gallium with a mass of 10%-15%, and after microwave melting at 1100℃-1200℃ for 1.5-2 hours, cast it into a 3-8μm thin sheet to obtain the metal activation layer.

5. The method for manufacturing AMB ceramic copper-clad laminate according to claim 1, characterized in that: In step 2, the vacuum drying temperature is 120-150℃, and the vacuum drying time is 1-2 hours.

6. The method for manufacturing AMB ceramic copper-clad laminate according to claim 1, characterized in that: In step 3, the temperature is 200℃-300℃ when coating the ceramic sheet surface with a composite interface material film using pulsed laser deposition technology.

7. The method for manufacturing AMB ceramic copper-clad laminate according to claim 3, characterized in that: The thickness of the thin film made from the composite interface material is 8-15 μm.

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