Display panel, manufacturing method thereof and display device

By setting a barrier structure on the first side wall of the pixel definition structure of the OLED display panel, the problem of sub-pixels being lighted is solved, and the display quality of the display panel is improved.

CN119698175APending Publication Date: 2025-03-25WUHAN TIANMA MICROELECTRONICS CO LTD SHANGHAI BRANCH
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202411899312.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-20
Publication Date
2025-03-25

AI Technical Summary

Technical Problem

There is a problem of sub-pixel lightening in the existing OLED display panel, resulting in monochrome impurity and low grayscale picture color distortion.

Method used

A plurality of barrier structures are provided on the first side wall of the pixel-defined structure, and the light emitting common layers such as the hole injection layer break or thin the thickness at the barrier structure, blocking or increasing the path of charge lateral flow, thereby avoiding or improving the problem of sub-pixel light.

Benefits of technology

Through the design of the barrier structure, the lateral flow of charge is effectively blocked or reduced, the problem of sub-pixels is avoided, and the display quality of solid color pictures and low grayscale pictures is improved.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119698175A_ABST
    Figure CN119698175A_ABST
Patent Text Reader

Abstract

The invention relates to a display panel, a manufacturing method thereof and a display device. The display panel comprises a substrate; the pixel definition layer is located on one side of the substrate, and the pixel definition layer comprises a pixel definition structure and a plurality of pixel openings defined by the pixel definition structure; the light-emitting devices are located on one side of the substrate, at least parts of the light-emitting devices are located in the corresponding pixel openings, the light-emitting devices comprise light-emitting common layers, and the light-emitting common layers are located on the sides, away from the substrate, of the pixel definition layers; wherein the surface of the pixel definition structure comprises a first side wall surrounding the corresponding pixel opening and a first top surface far away from one side of the substrate, the first side wall is connected with the first top surface, and the pixel definition structure further comprises a plurality of barrier structures located on at least part of the first side wall. According to the invention, the problem that the sub-pixels are lighted without light can be solved.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] With the continuous development of display technology, organic light-emitting diode (OLED) display devices have been widely used in many fields such as flat panel displays, flexible displays, automotive displays and solid-state lighting due to their advantages such as wide color gamut, high contrast, energy saving and foldability. Summary of the invention

[0003] Based on this, it is necessary to provide a display panel and a manufacturing method thereof, and a display device, aiming to solve the problem of sub-pixel stealth in the display panel in the related art.

[0004] In a first aspect, an embodiment of the present application provides a display panel, including:

[0005] substrate;

[0006] A pixel definition layer, located on one side of the substrate, the pixel definition layer comprising a pixel definition structure and a plurality of pixel openings surrounded by the pixel definition structure;

[0007] A plurality of light emitting devices are located on one side of the substrate, the light emitting devices are at least partially located in the corresponding pixel openings, the light emitting devices include a light emitting common layer, and the light emitting common layer is located on a side of the pixel definition layer away from the substrate;

[0008] The surface of the pixel definition structure includes a first side wall surrounding the corresponding pixel opening and a first top surface away from the substrate, the first side wall is connected to the first top surface, and the pixel definition structure also includes a plurality of barrier structures located on at least part of the first side wall.

[0009] In a second aspect, an embodiment of the present application further provides a display device, which includes the display panel provided in the first aspect.

[0010] In a third aspect, the present application also provides a method for manufacturing a display panel, including:

[0011] S100, providing a substrate;

[0012] S200, forming a plurality of first electrodes on one side of the substrate;

[0013] S300, forming a first photoresist layer on a side of the first electrode away from the substrate, and patterning the first photoresist layer through exposure and development processes to form a first intermediate structure, wherein the first intermediate structure includes a first lower portion and a first upper portion sequentially stacked on the first electrode, an orthographic projection of the first lower portion on the substrate is located within a range of an orthographic projection of the first upper portion on the substrate, and an orthographic projection of the first lower portion on the substrate is located within a range of an orthographic projection of the corresponding first electrode on the substrate;

[0014] S400, forming a first definition material layer on a side of the first electrode away from the substrate, wherein in a direction perpendicular to the plane where the substrate is located, the thickness of the first definition material layer is greater than the thickness of the first intermediate structure, and the first definition material layer fills a gap between two adjacent first intermediate structures;

[0015] S500, patterning the first definition material layer through exposure and development processes to form a plurality of first preset structures, wherein the first preset structure includes a second lower portion located between two adjacent first intermediate structures, and a second upper portion located on the second lower portion and the first intermediate structure on a side away from the substrate, the second upper portion is connected to the corresponding second lower portion, and in a direction parallel to the plane where the substrate is located, the width of the second upper portion is greater than the distance between two adjacent first upper portions, and the second upper portion includes a protrusion protruding in a direction parallel to the plane where the substrate is located relative to the side wall of the second lower portion, and the protrusion is built on the surface of the two adjacent first intermediate structures on a side away from the substrate;

[0016] S600, forming a second photoresist layer on a side of the first intermediate structure and the first preset structure away from the substrate, wherein the material of the second photoresist layer is different from that of the first photoresist layer, and patterning the second photoresist layer through exposure and development processes to form a second intermediate structure, wherein the second intermediate structure is stacked with the corresponding first intermediate structure in a direction perpendicular to the plane where the substrate is located, and the second intermediate structure covers two opposite protrusions of two adjacent first preset structures;

[0017] S700, forming a second definition material layer on a side of the first intermediate structure away from the substrate, wherein in a direction perpendicular to the plane where the substrate is located, the thickness of the second definition material layer is less than or equal to the height of the second intermediate structure, and the second definition material layer includes a plurality of second preset structures, and the second preset structure is located between two adjacent second intermediate structures;

[0018] S800: removing the first intermediate structure and the second intermediate structure, so that the first preset structure and the second preset structure form a pixel definition structure.

[0019] In an embodiment of the present application, a plurality of blocking structures located on at least a portion of the first side wall are arranged on the first side wall of the pixel definition structure surrounding the corresponding pixel opening, and the hole injection layer and other luminescent common layers are broken at the blocking structure to block the path for the lateral flow of charges, or the hole injection layer and other luminescent common layers are thinned at the blocking structure to increase the resistance to the lateral flow of charges, thereby avoiding or improving the problem of sub-pixel stealing, thereby improving the display quality of pure color images and low grayscale images. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 An overall schematic diagram of a display panel provided for some embodiments of the present application.

[0022] Figure 2 A first top view schematic diagram of a display panel provided in some embodiments of the present application.

[0023] Figure 3 A schematic diagram of a first cross-sectional structure of a display panel provided in some embodiments of the present application.

[0024] Figure 4 A schematic diagram of a second cross-sectional structure of a display panel provided in some embodiments of the present application.

[0025] Figure 5 A schematic diagram of a third cross-sectional structure of a display panel provided in some embodiments of the present application.

[0026] Figure 6 A second schematic top view of a display panel provided in some embodiments of the present application.

[0027] Figure 7 A third schematic top view of a display panel provided in some embodiments of the present application.

[0028] Figure 8 A fourth schematic top view of a display panel provided in some embodiments of the present application.

[0029] Fig. 9 A schematic diagram of a fourth cross-sectional structure of a display panel provided in some embodiments of the present application.

[0030] Fig.10A schematic diagram of a display device provided in some embodiments of the present application.

[0031] Fig.11 A schematic diagram of the process steps of a method for manufacturing a display panel provided in some embodiments of the present application.

[0032] Fig.12 A schematic diagram of a first intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application.

[0033] Fig.13 A schematic diagram of a second intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application.

[0034] Fig.14 A schematic diagram of a third intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application.

[0035] Fig.15 A schematic diagram of a fourth intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application.

[0036] Fig.16 A schematic diagram of a fifth intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application.

[0037] Fig.17 A schematic diagram of a sixth intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application.

[0038] Fig.18 A schematic diagram of a seventh intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application.

[0039] Fig.19 A schematic diagram of an eighth intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application.

[0040] Fig. 20 A ninth intermediate process schematic diagram of a method for manufacturing a display panel provided in some embodiments of the present application.

[0041] Fig.21 A schematic diagram of the tenth intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application.

[0042] Reference numerals:

[0043] Display device 200; display panel 100; substrate 11; pixel definition layer 15; light emitting device 123; pixel definition structure 151; pixel opening 152; light emitting common layer 21; first side wall 151C; first top surface 151D; barrier structure 30; first conductive layer 12; first insulating layer 13; first electrode layer 14; second electrode 22; encapsulation layer 40; first conductive portion 121; protrusion 151T; groove 151A;

[0044] Display area AA; non-display area BB; sub-pixel 10P; data signal line Da1; scan signal line Scan1; pixel driving circuit P0; groove side wall 151A1; groove bottom wall 151A2; repeating unit 72; red light emitting device 10R; green light emitting device 10G; blue light emitting device 10B;

[0045] first angle α1; second angle α2; first sub-protrusion edge 151T1; first sub-sidewall edge 15111; second sub-sidewall edge 15112; first portion 15110; second portion 15120; first depth h1; first thickness h2; first width d1; third angle β; first electrode 141; first gap 152J; first common layer portion 211; second common layer portion 212; dotted frame 71;

[0046] First photoresist layer X1; first intermediate structure X11; first lower part X111; first upper part X112; first definition material layer D1; first preset structure D11; second lower part D111; second upper part D112; second photoresist layer X2; second intermediate structure X21; second definition material layer D2; second preset structure D21; third lower part X211; third upper part X212. DETAILED DESCRIPTION

[0047] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive.

[0048] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0049] When describing positional relationships, unless otherwise specified, when an element such as a layer, film, or substrate is referred to as being "on" another element, it can be directly on the other element or there may be intervening elements. Further, when a layer is referred to as being "under" another layer, it can be directly under or there may be one or more intervening elements. It is also understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or there may be one or more intervening elements.

[0050] In the case of using “including”, “having”, and “comprising” described herein, another component may be added unless a clear limiting term such as “only”, “consisting of”, etc. is used. Unless mentioned otherwise, a term in the singular form may include a plural form and should not be understood as being one in number.

[0051] It should be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element without departing from the scope of the present application.

[0052] It should also be understood that when interpreting an element, even if not explicitly described, the element is interpreted as including a range of error, which should be within the acceptable deviation range of the specific value determined by those skilled in the art. For example, "approximately", "approximately" or "substantially" can mean within one or more standard deviations, which are not limited here.

[0053] Furthermore, in the specification, the phrase “planar distribution schematic diagram” refers to a drawing when a target portion is viewed from above, and the phrase “cross-sectional schematic diagram” refers to a drawing when a section taken by vertically cutting the target portion is viewed from the side.

[0054] In addition, the drawings are not drawn to a 1:1 scale, and the relative sizes of the elements in the drawings are drawn only as examples and not necessarily according to the true scale.

[0055] In the related art, the display panel has the problem of sub-pixel stealing. The inventor found that the reason for the above phenomenon is that the working voltages of sub-pixels (light-emitting devices) of different colors are different. When the sub-pixel (light-emitting device) with higher working voltage is lit by applying voltage, most of the current will flow to the sub-pixel (light-emitting device) with higher working voltage. Since the hole injection layer and other luminous common layers have higher conductivity, a small part of the current will flow through the hole injection layer and other luminous common layers to the sub-pixel (light-emitting device) with lower working voltage, that is, lateral leakage current occurs. The lateral leakage current causes the sub-pixel to steal light, resulting in the phenomenon of monochrome impurity and color distortion of low grayscale images.

[0056] Based on the above technical problems, the inventors have discovered that on the first side wall of the pixel definition structure surrounding the corresponding pixel opening, a plurality of blocking structures are arranged on at least a portion of the first side wall, and the hole injection layer and other luminescent common layers are broken at the blocking structure, blocking the path for the lateral flow of charges, or the hole injection layer and other luminescent common layers are thinned at the blocking structure, increasing the resistance to the lateral flow of charges, thereby avoiding or improving the problem of sub-pixel stealing, thereby improving the display quality of pure color images and low grayscale images.

[0057] The above is the core idea of ​​this application. The technical solutions in the embodiments of this application will be described clearly and completely below in conjunction with the drawings in the embodiments of this application. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0058] See also Figures 1 to 9 . Figure 1 An overall schematic diagram of a display panel provided for some embodiments of the present application. Figure 2 A first top view schematic diagram of a display panel provided in some embodiments of the present application. Figure 3 A schematic diagram of a first cross-sectional structure of a display panel provided in some embodiments of the present application. Figure 2 for Figure 1 A partial enlarged schematic diagram is shown in the figure. Figure 3 for Figure 2 Cross-sectional structure at the dashed line C1-C1.

[0059] Figure 4 A schematic diagram of a second cross-sectional structure of a display panel provided in some embodiments of the present application. Figure 5 A schematic diagram of a third cross-sectional structure of a display panel provided in some embodiments of the present application. Figure 6 A second schematic top view of a display panel provided in some embodiments of the present application. Figure 7 A third schematic top view of a display panel provided in some embodiments of the present application. Figure 4 for Figure 2 Cross-sectional structure at the dashed line C1-C1. Figure 5 for Figure 4 An enlarged schematic diagram of the dotted box 71 in the middle. Figure 6 and Figure 7 for Figure 1 A partial enlarged schematic diagram is shown in the figure.

[0060] Figure 8 A fourth schematic top view of a display panel provided in some embodiments of the present application. Fig. 9A schematic diagram of a fourth cross-sectional structure of a display panel provided in some embodiments of the present application. Figure 8 for Figure 1 A partial enlarged schematic diagram is shown in the figure. Fig. 9 for Figure 8 Cross-sectional structure at the dashed line C1-C1.

[0061] First, see Figures 1 to 9 The present application provides a display panel 100, which includes a substrate 11, a pixel definition layer 15, and a plurality of light-emitting devices 123. The pixel definition layer 15 is located on one side of the substrate 11, and includes a pixel definition structure 151 and a plurality of pixel openings 152 surrounded by the pixel definition structure 151; the plurality of light-emitting devices 123 are located on one side of the substrate 11, and the light-emitting devices 123 are at least partially located in the corresponding pixel openings 152, and the light-emitting devices 123 include a light-emitting common layer 21, and the light-emitting common layer 21 is located on the side of the pixel definition layer 15 away from the substrate 11; wherein the surface of the pixel definition structure 151 includes a first side wall 151C surrounding the corresponding pixel opening 152, and a first top surface 151D away from the side of the substrate 11, the first side wall 151C is connected to the first top surface 151D, and the pixel definition structure 151 also includes a plurality of barrier structures 30 located on at least a portion of the first side wall 151C.

[0062] For example, Figure 1 The example shown is, Figure 2 for Figure 1 In the partially enlarged schematic diagram, the display panel 100 is an OLED panel, and the display panel 100 may include a display area AA and a non-display area BB surrounding the display area AA. A plurality of sub-pixels 10P are arranged in the display area AA. The sub-pixels 10P include sub-pixels of different colors. Different color sub-pixels include light-emitting devices of different colors. For example, the red sub-pixel includes a red light-emitting device 10R, the green sub-pixel includes a green light-emitting device 10G, and the blue sub-pixel includes a blue light-emitting device 10B. Figure 2 In the display panel 100, the display panel 100 also includes a pixel driving circuit P0, a scanning signal line Scan1 and a data signal line Da1 arranged in the display area AA. The scanning signal line Scan1 and the data signal line Da1 control the corresponding pixel driving circuit P0, and the pixel driving circuit P0 drives the light-emitting device 123 in the corresponding sub-pixel 10P to emit light.

[0063] For example, the structure of the light-emitting device of the OLED panel generally includes an anode corresponding to each sub-pixel 10P, an auxiliary functional layer (such as a hole transport layer, an electron transport layer, an electron injection layer, etc.), a light-emitting layer and a cathode. When voltage is applied to the anode and the cathode, the holes and electrons are respectively transferred and moved to the light-emitting layer, and the two are recombined in the light-emitting layer to form excitons; the excitons migrate under the action of the electric field, transfer energy to the light-emitting material, and excite the electrons in the light-emitting material to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to generate photons, releasing light energy.

[0064] For example, the substrate 11 may be a glass substrate or a flexible substrate. For example, the material of the substrate 11 includes polyimide, which is not limited here.

[0065] For example, the film structure of the display panel 100 may include a first conductive layer 12, a first insulating layer 13, a first electrode layer 14, a pixel definition layer 15, a light emitting common layer 21, a second electrode 22 and an encapsulation layer 40 stacked in sequence. However, the film structure of the display panel 100 is not limited thereto.

[0066] For example, the first conductive layer 12 includes a plurality of first conductive portions 121 , and the first conductive portions 121 may be sources or drains of thin film transistors in the driving circuit, or the first conductive portions 121 may be electrically connected to sources or drains of thin film transistors in the driving circuit.

[0067] By way of example, the first electrode layer 14 includes a plurality of first electrodes 141 , and the plurality of first electrodes 141 are arranged at intervals or in an array.

[0068] For example, the first electrode 141 may be one of an anode and a cathode, and the second electrode 22 may be the other of the anode and the cathode. In the present application, the first electrode 141 is exemplified as an anode.

[0069] For example, the light emitting common layer 21 may include one or more of a light emitting layer EML, a hole injection layer HIL, a hole transport layer HTL, an electron injection layer EIL, an electron transport layer ETL, a hole blocking layer HBL, and an electron blocking layer EBL.

[0070] For example, the surface of the pixel definition structure 151 includes a first side wall 151C surrounding the corresponding pixel opening 152, and a first top surface 151D away from the side of the substrate 11, the first side wall 151C is connected to the first top surface 151D, for example, the cross-section of the pixel definition structure 151 is a trapezoid, the waist of the trapezoid is the first side wall 151C, and the upper bottom of the trapezoid away from the substrate 11 is the first top surface 151D.

[0071] For example, it should be noted that the minimum thickness of the light-emitting common layer 21 at the barrier structure 30 is smaller than the minimum thickness of the light-emitting common layer 21 on the adjacent first top surface 151D, which can improve or avoid lateral flow of charges.

[0072] In an embodiment of the present application, a plurality of blocking structures 30 are arranged on the first side wall 151C of the pixel definition structure 151 surrounding the corresponding pixel opening 152, and are located on at least a portion of the first side wall 151C. The hole injection layer and other luminous common layers 21 are broken at the blocking structure 30, thereby blocking the path for the lateral flow of charges. Alternatively, the hole injection layer and other luminous common layers 21 are thinned at the blocking structure 30, thereby increasing the resistance to the lateral flow of charges. This can avoid or improve the problem of sub-pixel stealing, thereby improving the display quality of pure color images and low grayscale images.

[0073] In some embodiments, the plurality of barrier structures 30 include at least one of a plurality of protrusions 151T and a plurality of grooves 151A located on the first sidewall 151C.

[0074] For example, Figure 2 and Figure 3 As shown, the multiple blocking structures 30 include multiple protrusions 151T located on the first side wall 151C, and the light-emitting common layer 21 such as the hole injection layer is disconnected at the protrusion 151T, blocking the path for the lateral flow of charges, thereby avoiding or improving the problem of sub-pixel stealing, thereby improving the display quality of pure color images and low grayscale images.

[0075] For example, Figure 2 , Figures 4 to 7 As shown, the multiple blocking structures 30 include multiple grooves 151A located on the first side wall 151C, and the thickness of the light-emitting common layer 21 such as the hole injection layer is thinned at the grooves 151A, which increases the resistance of the lateral flow of charges, thereby avoiding or improving the problem of sub-pixel stealing, thereby improving the display quality of pure color images and low grayscale images.

[0076] For example, Figure 8 and Fig. 9 As shown, the plurality of barrier structures 30 include a plurality of protrusions 151T and a plurality of grooves 151A located on the first side wall 151C, and have the improved effects of both the protrusions 151T and the grooves 151A.

[0077] See also Figure 2 and Figure 3 .

[0078] In some embodiments, Figure 2 and Figure 3As shown, the plurality of barrier structures 30 include a plurality of protrusions 151T located on the first side wall 151C; a first gap 152J is formed between the surface of the protrusions 151T close to the substrate 11 and the first side wall 151C.

[0079] For example, the plurality of barrier structures 30 include a plurality of protrusions 151T on the first sidewall 151C. The protrusions 151T are suspended to form first gaps 152J. The first gaps 152J disconnect the light-emitting common layer 21 such as the hole injection layer at the protrusions 151T.

[0080] In some embodiments, Figure 2 and Figure 3 As shown, at the first gap 152J, the angle between the surface of the protrusion 151T close to the substrate 11 and the first side wall 151C is an acute angle; the angle between the first side wall 151C and the bottom surface of the pixel definition structure 151 close to the substrate 11 is an acute angle.

[0081] For example, at the first gap 152J, the angle between the surface of the protrusion 151T close to the substrate 11 and the first side wall 151C is a first angle α1, and the first angle α1 is an acute angle to prevent the protrusion 151T from being easily broken or cracked.

[0082] For example, the angle between the first side wall 151C and the bottom surface of the pixel definition structure 151 close to the substrate 11 is a second angle α2, and the second angle α2 is an acute angle. For example, the cross-section of the pixel definition structure 151 is trapezoidal, so that the light-emitting common layer 21 is well formed on the side of the first electrode 141 away from the substrate 11.

[0083] In some embodiments, Figure 2 and Figure 3 As shown, the protruding direction of the protrusion 151T is parallel to the direction of the plane where the substrate 11 is located.

[0084] For example, the protruding direction (extension direction) of the protrusion 151T is parallel to the direction of the plane where the substrate 11 is located. Such a protrusion 151T is easier to manufacture (further introduced in the subsequent manufacturing method of the display panel), which can reduce the manufacturing cost and process steps.

[0085] In some embodiments, Figure 2 and Figure 3As shown, the edge of the protrusion 151T includes a first sub-protrusion edge 151T1 close to the pixel opening 152, the edge of the first side wall 151C includes a first sub-side wall edge 15111 close to the substrate 11, and a second sub-side wall edge 15112 connected to the first top surface 151D; in the orthographic projection perpendicular to the substrate 11, the orthographic projection of the first sub-protrusion edge 151T1 is located between the corresponding orthographic projection of the first sub-side wall edge 15111 and the orthographic projection of the second sub-side wall edge 15112.

[0086] For example, in the orthographic projection perpendicular to the substrate 11, the orthographic projection of the first sub-protrusion edge 151T1 is located between the orthographic projection of the corresponding first sub-sidewall edge 15111 and the orthographic projection of the second sub-sidewall edge 15112, that is, in the direction perpendicular to the plane of the substrate 11, the protrusion 151T and the bottom wall of the pixel opening 152 are not stacked or overlapped, thereby preventing the protrusion 151T from blocking the formation of film layers such as the light-emitting common layer 21 on the bottom wall of the pixel opening 152, thereby ensuring the structural integrity of the light-emitting device 123.

[0087] In some embodiments, Figure 2 and Figure 3 As shown, in a direction perpendicular to the plane of the substrate 11, the pixel definition structure 151 includes at least a first portion 15110 located on a side of the protrusion 151T close to the substrate 11, and a second portion 15120 located on a side of the protrusion 151T away from the substrate 11, and the protrusion 151T and the first portion 15110 are an integrally formed structure.

[0088] For example, please combine with the subsequent manufacturing method of the display panel. During the manufacturing process, the protrusion 151T and the first portion 15110 (the protrusion 151T and the first portion 15110 together are equivalent to the first preset structure D11) are first manufactured in the same process steps. The protrusion 151T and the first portion 15110 are an integrally formed structure, and then the second portion 15120 (the second portion 15120 is equivalent to the second preset structure D21) is manufactured. This manufacturing process has simple steps and is easier to manufacture the protrusion 151T.

[0089] In some embodiments, Figure 2 and Figure 3 As shown, on a plane parallel to the substrate 11 , the protrusion 151T is a non-closed structure extending around the corresponding pixel opening 152 .

[0090] For example, the light-emitting common layer 21 such as the hole injection layer is disconnected at the protrusion 151T, but the second electrode 22 is also easily disconnected at the protrusion 151T. In order to ensure that the second electrode 22 of one light-emitting device 123 is connected with the second electrode 22 of an adjacent light-emitting device 123, it is necessary to set the protrusion 151T as a non-closed structure extending around the corresponding pixel opening 152, thereby ensuring that the second electrode 22 is a connected integral structure for multiple light-emitting devices 123, and ensuring that a voltage can be applied to the portion of the second electrode 22 corresponding to each light-emitting device 123.

[0091] See also Figure 2 , Figure 4 , Figures 5 to 7 .

[0092] In some embodiments, Figure 2 , Figures 4 to 7 As shown, the plurality of barrier structures 30 include a plurality of grooves 151A located on the first side wall 151C; the openings of the grooves 151A face the direction of the first side wall 151C away from the substrate 11 .

[0093] For example, the plurality of barrier structures 30 include a plurality of grooves 151A on the first side wall 151C, and the thickness of the light-emitting common layer 21 such as the hole injection layer is thinned at the grooves 151A, thereby increasing the resistance to the lateral flow of charges, thereby avoiding or improving the problem of sub-pixel stealing, thereby improving the display quality of pure color images and low grayscale images.

[0094] For example, the thickness of the light-emitting common layer 21 at the edge of the groove 151A is the second thickness h3 (the thickness of the light-emitting common layer 21 at the side wall of the groove 151A is the second thickness h3), and the thickness of the light-emitting common layer 21 outside the two sides of the groove is equal to the first thickness h2. Due to the existence of the slope at the side wall of the groove 151A, the second thickness h3 is reduced, so that the second thickness h3 is less than the first thickness h2, and the second thickness h3 is greater than 0.

[0095] In some embodiments, Figure 2 , Figure 4 , Figures 5 to 7 As shown, in a direction perpendicular to the surface where the first side wall 151C is located, the depth of the groove 151A is a first depth h1, the thickness of the light-emitting common layer 21 is a first thickness h2, and the first depth h1 is less than the first thickness h2.

[0096] For example, the first depth h1 is less than the first thickness h2, so that the thickness of the light-emitting common layer 21 can be thinned at the groove 151A, rather than the light-emitting common layer 21 breaking at the groove 151A, thereby avoiding the second electrode 22 from breaking or thinning at the groove 151A. In this way, multiple grooves 151A can be set, and the thickness of the light-emitting common layer 21 can be reduced at multiple positions, thereby further improving the lateral resistance of the light-emitting common layer 21 and better improving the sub-pixel stealing. At the same time, the thickness uniformity and voltage uniformity of the second electrode 22 are ensured.

[0097] For example, the first depth h1 is less than the first thickness h2, so that the thickness of the light-emitting common layer 21 at the groove 151A can be thinned instead of the light-emitting common layer 21 breaking at the groove 151A, thereby avoiding the second electrode 22 from breaking or thinning at the groove 151A. In this way, the groove 151A can be set as a closed structure surrounding the light-emitting device 123 without affecting the breaking or thinning of the second electrode 22. The light-emitting common layer 21 is thinned in all directions of the pixel opening 152, reducing the lateral leakage current from all directions of the pixel opening 152, and better improving the sub-pixel stealing.

[0098] In some embodiments, Figure 2 , Figure 4 , Figures 5 to 7 As shown, the ratio of the first depth h1 to the first thickness h2 is 0.5 to 0.8.

[0099] For example, after verification by the inventors, when the ratio of the first depth h1 to the first thickness h2 is 0.5 to 0.8, for various parts of the entire display panel 100, not only can the thickness of the light-emitting common layer 21 be reduced at the groove 151A, but the thickness of the second electrode 22 can also be better avoided. The surface formed by the light-emitting common layer 21 is relatively flat, ensuring the thickness uniformity and voltage uniformity of the second electrode 22.

[0100] In some embodiments, Figure 2 , Figure 4 , Figures 5 to 7 As shown, in a direction from an end of the first side wall 151C close to the substrate 11 to an end of the first side wall 151C close to the first top surface 151D, the width of the groove 151A is a first width d1, and the first width d1 is 200 nanometers to 500 nanometers.

[0101] For example, it has been verified by the inventor that on the plane where the first side wall 151C is located, the width of the groove 151A is a first width d1, and the first width d1 is 200 nanometers to 500 nanometers. This can not only better reduce the thickness of the light-emitting common layer 21 at the groove 151A, but also better avoid affecting the thickness of the second electrode 22.

[0102] In some embodiments, Figure 2 , Figures 4 to 7 As shown, the groove 151A includes two groove side walls 151A1 arranged opposite to each other, and a groove bottom wall 151A2 connecting the two groove side walls 151A1 arranged opposite to each other, and the light-emitting common layer 21 includes a first common layer portion 211 covering the groove side walls 151A1 and a second common layer portion 212 covering the bottom wall of the groove 151A; the angle between the first common layer portion 211 and the second common layer portion 212 in the direction away from the substrate 11 is greater than 110 degrees.

[0103] For example, the angle between the first common layer portion 211 and the second common layer portion 212 in the direction away from the substrate 11 is a third angle β, and the third angle β is greater than 110 degrees. At this time, the thickness of the light-emitting common layer 21 is thinned instead of broken. At the same time, the transition of the surface angle of the light-emitting common layer 21 is relatively smooth, ensuring the thickness uniformity and voltage uniformity of the second electrode 22.

[0104] For example, by controlling the first depth h1 to be smaller than the first thickness h2, the ratio of the first depth h1 to the first thickness h2 is 0.5 to 0.8, and the first width d1 is 200 nanometers to 500 nanometers, the third angle β can be greater than 110 degrees.

[0105] In some embodiments, Figure 6 As shown, the multiple barrier structures 30 include multiple grooves 151A located on a first side wall 151C, and the multiple grooves 151A are arranged in sequence from one end of the first side wall 151C close to the substrate 11 to one end of the first side wall 151C close to the first top surface 151D; the grooves 151A extend around the corresponding pixel openings 152.

[0106] For example, on the plane where the first side wall 151C is located, or on a first side wall 151C, from the first sub-side wall edge 15111 to the second sub-side wall edge 15112, a plurality of grooves 151A can be sequentially arranged around the corresponding pixel openings 152, and the grooves 151A can be strip-shaped, curved, or arc-shaped, and the thickness of the light-emitting common layer 21 can be thinned at multiple locations, thereby better improving the lateral resistance of the light-emitting common layer and better improving the problem of sub-pixel transparency.

[0107] In some embodiments, Figure 7 As shown, the pixel definition structure 151 includes a plurality of grooves 151A located on a first side wall 151C, and the orthographic projection of the grooves 151A on the plane where the first side wall 151C is located is block-shaped; on the first side wall 151C, the plurality of grooves 151A are staggeredly arranged around the corresponding pixel openings 152.

[0108] For example, on the plane where the first side wall 151C is located, or on a first side wall 151C, from the first sub-side wall edge 15111 to the second sub-side wall edge 15112, a plurality of grooves 151A can be arranged around the corresponding pixel openings 152. The plurality of grooves 151A can be in the shape of a plurality of blocks, or a plurality of line segments, or a plurality of spaced arcs. The plurality of grooves 151A are staggeredly arranged around the corresponding pixel openings 152, and the thickness of the light-emitting common layer 21 can be thinned at a plurality of staggered locations, thereby better improving the lateral resistance of the light-emitting common layer and better improving the problem of sub-pixel transparency.

[0109] See also Figure 8 and Fig. 9 .

[0110] In some embodiments, Figure 8 and Fig. 9 As shown, at least part of the blocking structure 30 includes a protrusion 151T located on the first side wall 151C and a groove 151A located on the first side wall 151C; the protrusion 151T is arranged on the first side wall 151C of at least one side of at least part of the light-emitting device 123, and the groove 151A is arranged on the first side wall 151C of at least one side of at least part of the light-emitting device 123.

[0111] For example, the protrusion 151T may be provided on the first side wall 151C at one location of the display panel 100 , and the groove 151A may be provided on the first side wall 151C at another location of the display panel 100 .

[0112] For example, a protrusion 151T may be provided on the first sidewall 151C on one side of the light emitting device 123 , and a groove 151A may be provided on the first sidewall 151C on the other side of the light emitting device 123 .

[0113] In some embodiments, Figure 8 and Fig. 9 As shown, a protrusion 151T and a groove 151A are provided on the first side wall 151C around at least a portion of the light emitting device 123 , and the protrusion 151T and the groove 151A are located on different sides of the light emitting device 123 .

[0114] For example, by setting the protrusion 151T and the groove 151A at the same time, and the protrusion 151T and the groove 151A are located on different sides of the light-emitting device 123, the protrusion 151T can better block the lateral leakage current, and the groove 151A can reduce the lateral leakage current. At the same time, the groove 151A can ensure that the second electrodes 22 between different light-emitting devices 123 have good electrical connectivity, so that the sub-pixel stealing, and the thickness and voltage uniformity of the second electrode 22 are greatly improved.

[0115] In some embodiments, Figure 8and Fig. 9 As shown, the plurality of light emitting devices 123 include light emitting devices 123 of different colors; at least part of the protrusions 151T are located between adjacent light emitting devices 123 of different colors; at least part of the grooves 151A are located between adjacent light emitting devices 123 of the same color.

[0116] For example, there are differences in the operating voltages of sub-pixels (light-emitting devices) of different colors, and lateral leakage current is more likely to exist between two adjacent light-emitting devices 123 of different colors, or the lateral leakage current between two adjacent light-emitting devices 123 of different colors is greater. Therefore, a protrusion 151T is set between the light-emitting devices 123 of different colors to block the light-emitting common layer 21. The protrusion 151T blocks the lateral leakage current, which can better improve the sub-pixel stealing.

[0117] For example, Figure 8 As shown, the plurality of light emitting devices 123 include a red light emitting device 10R, a green light emitting device 10G and a blue light emitting device 10B. Figure 8 The pixel arrangement is π arrangement. Figure 8 The repeating unit 72 includes two pixels, and the arrangement in the repeating unit 72 is: the red light-emitting device 10R, the green light-emitting device 10G, the green light-emitting device 10G and the red light-emitting device 10R are arranged in sequence in the column direction, and the blue light-emitting device 10B, the red light-emitting device 10R and the green light-emitting device 10G are arranged in sequence in the row direction, and one blue light-emitting device 10B corresponds to one red light-emitting device 10R and one green light-emitting device 10G.

[0118] For example, Figure 8 As shown, a protrusion 151T is provided between the red light-emitting device 10R and the green light-emitting device 10G, a protrusion 151T is provided between the red light-emitting device 10R and the blue light-emitting device 10B, and a protrusion 151T is provided between the green light-emitting device 10G and the blue light-emitting device 10B, which can block the larger lateral leakage current between two adjacent light-emitting devices 123 of different colors.

[0119] For example, the operating voltages of sub-pixels (light-emitting devices) of the same color are the same, and it is less likely that lateral leakage current will exist between two adjacent light-emitting devices 123 of the same color, or the lateral leakage current between two adjacent light-emitting devices 123 of the same color is smaller. Therefore, a groove 151A is provided between the light-emitting devices 123 of the same color, which can reduce the lateral leakage current to a certain extent while ensuring the thickness uniformity and voltage uniformity of the second electrode.

[0120] For example, Figure 8As shown, a groove 151A is provided between the green light emitting devices 10G and the blue light emitting devices 10B and the blue light emitting devices 10B, which can improve the small lateral leakage current between two adjacent light emitting devices 123 of the same color.

[0121] See also Fig.10 , Fig.10 A schematic diagram of a display device provided in some embodiments of the present application.

[0122] On the second aspect, based on the same application concept, the present application also provides a display device 200, the display device 200 includes any one of the display panels 100 described above, or the display device 200 includes a display panel 100 that combines any several of the features described above.

[0123] For example, the display device 200 also has the beneficial effects of the display panel 100 in the above embodiment. The similarities can be understood by referring to the above explanation of the display panel 100 and will not be described in detail below.

[0124] For example, the display device 200 provided in the embodiment of the present application can be Fig.10 The mobile phone shown can also be any electronic product with a display function, including but not limited to the following categories: televisions, laptops, desktop displays, tablet computers, digital cameras, smart bracelets, smart glasses, car displays, industrial control equipment, medical display screens, touch interactive terminals, etc. The embodiments of the present application do not specifically limit this.

[0125] See also Figures 11 to 21 , Fig.11 A schematic diagram of the process steps of a method for manufacturing a display panel provided in some embodiments of the present application. Fig.12 A schematic diagram of a first intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application. Fig.13 A schematic diagram of a second intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application. Fig.14 A schematic diagram of a third intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application. Fig.15 A schematic diagram of a fourth intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application. Fig.16 A schematic diagram of a fifth intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application. Fig.17 A schematic diagram of a sixth intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application. Fig.18 A schematic diagram of a seventh intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application. Fig.19A schematic diagram of an eighth intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application. Fig. 20 A ninth intermediate process schematic diagram of a method for manufacturing a display panel provided in some embodiments of the present application. Fig.21 A schematic diagram of the tenth intermediate process of a method for manufacturing a display panel provided in some embodiments of the present application.

[0126] In a third aspect, the present application further provides a method for manufacturing a display panel, and any of the display panels described above can be manufactured using the method for manufacturing a display panel. The method for manufacturing a display panel includes: step S100, step S200, step S300, step S400, step S500, step S600, step S700, and step S800.

[0127] S100, providing a substrate.

[0128] Illustratively, a substrate 11 is provided.

[0129] S200 , forming a plurality of first electrodes on one side of the substrate.

[0130] Illustratively, a plurality of first electrodes 141 are formed on one side of the substrate 11 .

[0131] S300, forming a first photoresist layer on a side of the first electrode away from the substrate, and patterning the first photoresist layer through exposure and development processes to form a first intermediate structure, wherein the first intermediate structure includes a first lower part and a first upper part stacked in sequence on the first electrode, the orthographic projection of the first lower part on the substrate is located within the range of the orthographic projection of the first upper part on the substrate, and the orthographic projection of the first lower part on the substrate is located within the range of the corresponding orthographic projection of the first electrode on the substrate.

[0132] For example, Fig.12 and Fig.13 As shown, a first photoresist layer X1 is formed on a side of the first electrode 141 away from the substrate 11, and the first photoresist layer X1 is patterned through exposure and development processes to form a first intermediate structure X11, the first intermediate structure X11 includes a first lower part X111 and a first upper part X112 stacked in sequence on the first electrode 141, the orthographic projection of the first lower part X111 on the substrate 11 is located within the range of the orthographic projection of the first upper part X112 on the substrate 11, and the orthographic projection of the first lower part X111 on the substrate 11 is located within the range of the orthographic projection of the corresponding first electrode 141 on the substrate 11.

[0133] For example, the orthographic projection of the first lower portion X111 on the substrate 11 is within the range of the orthographic projection of the first upper portion X112 on the substrate 11, that is, in the cross-sectional structure, the first intermediate structure X11 is a structure that is narrow at the bottom and wide at the top (for example, an inverted trapezoidal structure in cross-section).

[0134] Illustratively, the orthographic projection of the first lower portion X111 on the substrate 11 is within the range of the orthographic projection of the corresponding first electrode 141 on the substrate 11 , that is, in a direction perpendicular to the plane of the substrate 11 , the first intermediate structure X11 and the first electrode 141 are stacked.

[0135] S400, forming a first definition material layer on a side of the first electrode away from the substrate, wherein the thickness of the first definition material layer is greater than the thickness of the first intermediate structure in a direction perpendicular to the plane where the substrate is located, and the first definition material layer fills a gap between two adjacent first intermediate structures.

[0136] For example, Fig.14 , Fig.15 As shown, a first definition material layer D1 is formed on the side of the first electrode 141 away from the substrate 11. In the direction perpendicular to the plane where the substrate 11 is located, the thickness of the first definition material layer D1 is greater than the thickness of the first intermediate structure X11, and the first definition material layer D1 fills the gap between two adjacent first intermediate structures X11.

[0137] For example, in a direction perpendicular to the plane where the substrate 11 is located, the thickness of the first definition material layer D1 is greater than the thickness of the first intermediate structure X11, so that after the first definition material layer D1 is patterned to form a plurality of first preset structures D11 in a subsequent process, the first preset structure D11 includes a protrusion 151T protruding in a direction parallel to the plane where the substrate 11 is located relative to the side wall of the second lower portion D111, and the protrusion 151T is provided on the surface of two adjacent first intermediate structures X11 away from the substrate 11.

[0138] S500, patterning the first definition material layer through exposure and development processes to form a plurality of first preset structures, wherein the first preset structure includes a second lower portion located between two adjacent first intermediate structures, and a second upper portion located on the side of the second lower portion and the first intermediate structure away from the substrate, the second upper portion is connected to the corresponding second lower portion, and in a direction parallel to the plane where the substrate is located, the width of the second upper portion is greater than the distance between two adjacent first upper portions, and the second upper portion includes a protrusion protruding in a direction parallel to the plane where the substrate is located relative to the side wall of the second lower portion, and the protrusion is constructed on the surface of the two adjacent first intermediate structures away from the substrate.

[0139] For example, Fig.15 and Fig.16 As shown, the first definition material layer D1 is patterned by exposure and development processes to form a plurality of first preset structures D11, the first preset structure D11 includes a second lower portion D111 located between two adjacent first intermediate structures X11, and a second upper portion D112 located on the side of the second lower portion D111 and the first intermediate structure X11 away from the substrate 11, the second upper portion D112 is connected to the corresponding second lower portion D111, and in a direction parallel to the plane where the substrate 11 is located, the width of the second upper portion D112 is greater than the distance between the two adjacent first upper portions X112, the second upper portion D112 includes a protrusion 151T protruding in a direction parallel to the plane where the substrate 11 is located relative to the side wall of the second lower portion D111, and the protrusion 151T is arranged on the surface of the two adjacent first intermediate structures X11 away from the substrate 11.

[0140] For example, Fig.15 and Fig.16 As shown, when the first definition material layer D1 is a photoresist material, the first definition material layer D1 is exposed and developed by a first mask M1 using ultraviolet light Mg1 or other light to pattern the first definition material layer D1 to form a plurality of first preset structures D11.

[0141] For example, Fig.15 and Fig.16 As shown, when the first definition material layer D1 is a non-photoresist material (for example, an inorganic material), a photoresist layer ( Fig.15 The first photomask M1 is then used to expose the photoresist layer using ultraviolet light Mg1 and other light to pattern the photoresist layer, and then the first definition material layer D1 is patterned using an etching process to form a Fig.16 The plurality of first preset structures D11 are formed, and then the remaining photoresist layer on the surface of the first preset structure D11 away from the substrate 11 is removed.

[0142] For example, the second upper portion D112 includes a protrusion 151T protruding relative to the sidewall of the second lower portion D111 in a direction parallel to the plane where the substrate 11 is located. The protrusion 151T is the barrier structure 30 in the aforementioned embodiment.

[0143] S600, forming a second photoresist layer on a side of the first intermediate structure and the first preset structure away from the substrate, wherein the material of the second photoresist layer is different from that of the first photoresist layer, and patterning the second photoresist layer through exposure and development processes to form a second intermediate structure, wherein the second intermediate structure is stacked with the corresponding first intermediate structure in a direction perpendicular to the plane of the substrate, and the second intermediate structure covers two opposite protrusions of two adjacent first preset structures.

[0144] For example, Fig.17 and Fig.18 As shown, a second photoresist layer X2 is formed on the side of the first intermediate structure X11 and the first preset structure D11 away from the substrate 11. The material of the second photoresist layer X2 is different from that of the first photoresist layer X1. The second photoresist layer X2 is patterned through exposure and development processes to form a second intermediate structure X21. In a direction perpendicular to the plane where the substrate 11 is located, the second intermediate structure X21 is stacked with the corresponding first intermediate structure X11, and the second intermediate structure X21 covers two opposite protrusions 151T of two adjacent first preset structures D11.

[0145] For example, Fig.18 As shown, the second intermediate structure X21 includes a third lower portion X211 and a third upper portion X212 sequentially stacked on the first intermediate structure X11, and the orthographic projection of the third lower portion X211 on the substrate 11 is within the range of the orthographic projection of the third upper portion X212 on the substrate 11.

[0146] For example, the orthographic projection of the third lower portion X211 on the substrate 11 is within the range of the orthographic projection of the third upper portion X212 on the substrate 11, that is, in the cross-sectional structure, the second intermediate structure X21 is a structure that is narrow at the bottom and wide at the top (for example, an inverted trapezoidal structure in cross-section).

[0147] For example, the material of the second photoresist layer X2 is different from that of the first photoresist layer X1, and the material of the second photoresist layer X2 and the material of the first photoresist layer X1 correspond to different developers and removal solvents, respectively, so that when the second photoresist layer X2 is patterned to form the second intermediate structure X21 through exposure and development processes, the pattern of the first intermediate structure X11 will not be damaged or otherwise affected.

[0148] For example, the second intermediate structure X21 is prepared for the subsequent manufacture of the second preset structure D21.

[0149] S700, forming a second definition material layer on a side of the first intermediate structure away from the substrate, wherein in a direction perpendicular to the plane where the substrate is located, the thickness of the second definition material layer is less than or equal to the height of the second intermediate structure, and the second definition material layer includes a plurality of second preset structures, and the second preset structure is located between two adjacent second intermediate structures.

[0150] For example, Fig.19As shown, a second definition material layer D2 is formed on the side of the first intermediate structure X11 away from the substrate 11. In the direction perpendicular to the plane where the substrate 11 is located, the thickness of the second definition material layer D2 is less than or equal to the height of the second intermediate structure X21. The second definition material layer D2 includes a plurality of second preset structures D21, and the second preset structure D21 is located between two adjacent second intermediate structures X21.

[0151] For example, in a direction perpendicular to the plane of the substrate 11, the thickness of the second definition material layer D2 is less than or equal to the height of the second intermediate structure X21, so that in the process of forming the second definition material layer D2, the second definition material layer D2 has been patterned by the second intermediate structure X21, and there is no need to pattern the second definition material layer D2 through exposure and development processes, thereby simplifying the manufacturing process.

[0152] For example, the first definition material layer D1 and the second definition material layer D2 may be inorganic materials, such as silicon nitride, silicon oxide, silicon oxynitride, etc. However, the present invention is not limited thereto, and the first definition material layer D1 and the second definition material layer D2 may also be organic materials.

[0153] S800: removing the first intermediate structure and the second intermediate structure, so that the first preset structure and the second preset structure form a pixel definition structure.

[0154] For example, Fig. 20 and Fig.21 As shown, the first intermediate structure X11 and the second intermediate structure X21 are removed, and the first intermediate structure X11 and the second intermediate structure X21 can be removed by a glue solution (for example, the first intermediate structure X11 and the second intermediate structure X21 react with the glue solution, for example, the first intermediate structure X11 and the second intermediate structure X21 are dissolved in the glue solution), and the first preset structure D11 and the second preset structure D21 form a pixel definition structure 151.

[0155] For example, Fig. 20 As shown, first remove the second intermediate structure X21, such as Fig.21 As shown, the first intermediate structure X11 is removed, and the remaining first preset structure D11 and second preset structure D21 constitute a pixel definition structure 151. The first preset structure D11 is the first portion 15110 and the protrusion 151T in the aforementioned embodiment, and the second preset structure D21 is the second portion 15120 in the aforementioned embodiment.

[0156] For example, in some Figure 8 and Fig. 9For example, after the protrusions 151T are formed on some of the first side walls 151C, the grooves 151A may be formed on some of the first side walls 151C. For example, after step S800, the step further includes forming the grooves 151A on some of the first side walls 151C.

[0157] For example, a photoresist layer may be formed on the surface of the first sidewall 151C away from the substrate 11 , and the groove 151A may be formed through exposure, development, and etching processes.

[0158] For example, after forming a plurality of barrier structures 30 on the first sidewall 151C, the method for manufacturing a display panel may further include: forming a light-emitting common layer 21; and forming an encapsulation layer. The encapsulation layer may be a thin film encapsulation layer, for example, the encapsulation layer includes inorganic materials and organic materials that are stacked and alternately arranged.

[0159] For example, before forming multiple first electrodes (before step S200), the manufacturing method of the display panel may also include: forming multiple driving circuits on one side of the substrate 11, the multiple driving circuits include multiple thin film transistors, the first electrode 141 can be formed on a side of the multiple driving circuits away from the substrate 11, and the first electrode 141 is electrically connected to the thin film transistors in the corresponding driving circuits.

[0160] It should be noted that in some Figures 4 to 7 For example, the plurality of barrier structures 30 include a plurality of grooves 151A on the first sidewall 151C. A photoresist layer may be formed on a surface of the first sidewall 151C away from the substrate 11, and the grooves 151A may be formed by exposure, development and etching processes.

[0161] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0162] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A display panel, characterized in that: include: substrate; A pixel definition layer, located on one side of the substrate, the pixel definition layer comprising a pixel definition structure and a plurality of pixel openings surrounded by the pixel definition structure; A plurality of light emitting devices are located on one side of the substrate, the light emitting devices are at least partially located in the corresponding pixel openings, the light emitting devices include a light emitting common layer, and the light emitting common layer is located on a side of the pixel definition layer away from the substrate; The surface of the pixel definition structure includes a first side wall surrounding the corresponding pixel opening and a first top surface away from the substrate, the first side wall is connected to the first top surface, and the pixel definition structure also includes a plurality of barrier structures located on at least part of the first side wall.

2. The display panel according to claim 1, characterized in that: The plurality of barrier structures include at least one of a plurality of protrusions and a plurality of grooves located on the first sidewall.

3. The display panel according to claim 2, characterized in that: The plurality of barrier structures include a plurality of protrusions located on the first sidewall; A first gap is formed between a surface of the protrusion close to the substrate and the first side wall.

4. The display panel according to claim 3, characterized in that: At the first gap, an angle between a surface of the protrusion close to the substrate and the first side wall is an acute angle; An angle between the first side wall and a bottom surface of the pixel definition structure close to the substrate is an acute angle.

5. The display panel according to claim 3, characterized in that: The protruding direction of the protrusion is parallel to the direction of the plane where the base is located.

6. The display panel according to claim 3, characterized in that: The edge of the protrusion includes a first sub-protrusion edge close to the pixel opening, and the edge of the first side wall includes a first sub-side wall edge close to the substrate and a second sub-side wall edge connected to the first top surface; In an orthographic projection perpendicular to the substrate, the orthographic projection of the first sub-protrusion edge is located between the orthographic projection of the corresponding first sub-sidewall edge and the orthographic projection of the second sub-sidewall edge.

7. The display panel according to claim 3, characterized in that: In a direction perpendicular to the plane of the substrate, the pixel definition structure includes at least a first portion located on a side of the protrusion close to the substrate and a second portion located on a side of the protrusion away from the substrate, and the protrusion and the first portion are an integrally formed structure.

8. The display panel according to claim 3, characterized in that: On a plane parallel to the substrate, the protrusion is a non-closed structure extending around the corresponding pixel opening.

9. The display panel according to claim 2, characterized in that: A plurality of the barrier structures include a plurality of grooves located on the first sidewall; An opening of the groove faces a direction of the first side wall away from the substrate.

10. The display panel according to claim 9, characterized in that: In a direction perpendicular to the surface where the first side wall is located, the depth of the groove is a first depth, the thickness of the light-emitting common layer is a first thickness, and the first depth is less than the first thickness.

11. The display panel according to claim 10, characterized in that: A ratio of the first depth to the first thickness is 0.5 to 0.

8.

12. The display panel according to claim 9, characterized in that: From one end of the first side wall close to the substrate to one end of the first side wall close to the first top surface, the width of the groove is a first width, and the first width is 200 nanometers to 500 nanometers.

13. The display panel according to claim 9, characterized in that: The groove includes two groove side walls arranged opposite to each other, and a groove bottom wall connecting the two groove side walls arranged opposite to each other, and the light-emitting common layer includes a first common layer portion covering the groove side walls and a second common layer portion covering the groove bottom wall; an angle between the first common layer portion and the second common layer portion in a direction away from the substrate is greater than 110 degrees.

14. The display panel according to claim 9, characterized in that: The plurality of barrier structures include a plurality of grooves located on the first side wall, and the plurality of grooves are arranged in sequence from one end of the first side wall close to the base to one end of the first side wall close to the first top surface; The groove extends around the corresponding pixel opening.

15. The display panel according to claim 9, characterized in that: The pixel definition structure includes a plurality of grooves located on the first side wall, and the orthographic projection of the grooves on the plane where the first side wall is located is block-shaped; On the first side wall, a plurality of the grooves are arranged in a staggered manner around the corresponding pixel openings.

16. The display panel according to claim 2, characterized in that: At least a portion of the barrier structure includes a protrusion located on the first sidewall and a groove located on the first sidewall; The protrusion is disposed on at least one side of at least part of the first side wall of the light emitting device, and the groove is disposed on at least one side of at least part of the first side wall of the light emitting device.

17. The display panel according to claim 16, characterized in that: The protrusion and the groove are arranged on the first side wall around at least a portion of the light emitting device, and the protrusion and the groove are located on different sides of the light emitting device.

18. The display panel according to claim 17, characterized in that: The plurality of light emitting devices include light emitting devices of different colors; At least part of the protrusions are located between adjacent light-emitting devices of different colors; At least part of the groove is located between adjacent light emitting devices of the same color.

19. A display device, characterized in that: Comprising the display panel as claimed in any one of claims 1 to 18.

20. A method for manufacturing a display panel, characterized in that: include: S100, providing a substrate; S200, forming a plurality of first electrodes on one side of the substrate; S300, forming a first photoresist layer on a side of the first electrode away from the substrate, and patterning the first photoresist layer through exposure and development processes to form a first intermediate structure, wherein the first intermediate structure includes a first lower portion and a first upper portion sequentially stacked on the first electrode, an orthographic projection of the first lower portion on the substrate is located within a range of an orthographic projection of the first upper portion on the substrate, and an orthographic projection of the first lower portion on the substrate is located within a range of an orthographic projection of the corresponding first electrode on the substrate; S400, forming a first definition material layer on a side of the first electrode away from the substrate, wherein in a direction perpendicular to the plane where the substrate is located, the thickness of the first definition material layer is greater than the thickness of the first intermediate structure, and the first definition material layer fills a gap between two adjacent first intermediate structures; S500, patterning the first definition material layer through exposure and development processes to form a plurality of first preset structures, wherein the first preset structure includes a second lower portion located between two adjacent first intermediate structures, and a second upper portion located on the second lower portion and the first intermediate structure on a side away from the substrate, the second upper portion is connected to the corresponding second lower portion, and in a direction parallel to the plane where the substrate is located, the width of the second upper portion is greater than the distance between two adjacent first upper portions, and the second upper portion includes a protrusion protruding in a direction parallel to the plane where the substrate is located relative to the side wall of the second lower portion, and the protrusion is built on the surface of the two adjacent first intermediate structures on a side away from the substrate; S600, forming a second photoresist layer on a side of the first intermediate structure and the first preset structure away from the substrate, wherein the material of the second photoresist layer is different from that of the first photoresist layer, and patterning the second photoresist layer through exposure and development processes to form a second intermediate structure, wherein the second intermediate structure is stacked with the corresponding first intermediate structure in a direction perpendicular to the plane where the substrate is located, and the second intermediate structure covers two opposite protrusions of two adjacent first preset structures; S700, forming a second definition material layer on a side of the first intermediate structure away from the substrate, wherein in a direction perpendicular to the plane where the substrate is located, the thickness of the second definition material layer is less than or equal to the height of the second intermediate structure, and the second definition material layer includes a plurality of second preset structures, and the second preset structure is located between two adjacent second intermediate structures; S800: removing the first intermediate structure and the second intermediate structure, so that the first preset structure and the second preset structure form a pixel definition structure.