Antenna device and plasma processing apparatus

Abstract

An antenna device (10) for generating plasma (P) by causing a high-frequency current to flow comprises: a linear antenna (3); a straight-tube-shaped insulating cover (4) that covers the outer peripheral surface (3c) of the antenna (3); and a protruding insulating part (5) which is provided between both axial end parts (3a, 3b) of the antenna (3), protrudes further toward the inner peripheral surface (4a) side of the insulating cover (4) than the outer peripheral surface (3c) of the antenna (3), and contains an insulating material.

Description

Technical Field

[0001] The present invention relates to an antenna device for causing a high-frequency current to flow to generate an inductively coupled plasma, and a plasma processing device including the antenna device. Background Art

[0002] In the past, a plasma processing device has been proposed, which flows a high-frequency current through an antenna, generates an inductively coupled plasma (ICP (inductively coupled plasma)) through the generated induced electric field, and uses the inductively coupled plasma to process a substrate.

[0003] In this plasma processing device, an antenna device including a linear antenna and an insulating cover covering the antenna is proposed. Furthermore, if the antenna is extended to cope with a large substrate, etc., the antenna may bend, so a nut having an outer diameter larger than the outer diameter of the antenna is externally embedded in the antenna. Thus, even if the antenna is bent, the nut can prevent the antenna from contacting the insulating cover.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2019-160593 Summary of the invention

[0007] Problems to be solved by the invention

[0008] However, when such an antenna device is used for plasma processing, the outer diameter of the nut is larger than the outer diameter of the antenna, so the electric field is concentrated on the protruding portion of the nut. As a result, when the plasma processing is performed, ions in the plasma collide with the insulating cover near the protruding portion of the nut, and the insulating cover may be etched and damaged.

[0009] Therefore, the present invention is made to solve the above-mentioned problems, and a main subject thereof is to prevent damage to the insulating cover even when the antenna is extended to perform plasma processing.

[0010] Technical means of solving problems

[0011] That is, the antenna device of the present invention is used to make high-frequency current flow to generate plasma, and the antenna device is characterized in that it includes: a straight antenna; an insulating cover in the shape of a straight tube, covering the outer circumference of the antenna; and a protruding insulating portion, which is arranged between the two axial ends of the antenna, protruding toward the inner circumference side of the insulating cover than the outer circumference of the antenna, and contains insulating material.

[0012] With such a structure, the electric field is not concentrated on the protruding insulating portion, so that ions in the plasma do not collide with the insulating cover near the protruding insulating portion, thereby preventing the insulating cover from being etched and damaged.

[0013] Furthermore, even when the antenna or the insulating cover is bent, the protruding insulating portion can prevent the antenna from contacting the insulating cover.

[0014] If the antenna is extended, it is easy to bend. In particular, as a specific form of the antenna that is easy to bend, the antenna can be an inductance capacitance (LC) antenna, and the LC antenna also includes: at least two conductor parts; an insulating part, which is arranged between the adjacent conductor parts to insulate these conductor parts; and a capacitor element, which is electrically connected in series with the adjacent conductor parts.

[0015] With such a structure, even in the case of an LC antenna that is easily bent, the protruding insulating portion can prevent the antenna from contacting the insulating cover.

[0016] In addition, the capacitor element is electrically connected in series with the pair of conductor members, so that the composite reactance of the antenna can be in the form of subtracting the capacitive reactance from the inductive reactance. As a result, the impedance of the antenna can be reduced, and even when the antenna is extended, the increase in the impedance can be suppressed, and the high-frequency current can flow easily in the antenna, so that plasma with good uniformity can be generated efficiently.

[0017] The antenna device preferably includes a housing recess formed on an outer peripheral surface of the antenna, the housing recess housing an insulator constituting the protruding insulating portion.

[0018] If this structure is adopted, the protruding insulating part is arranged in the receiving recess, so the axial movement of the protruding insulating part is restricted in the receiving recess. Therefore, by arranging the receiving recess at the part where the antenna is easy to bend, the contact between the antenna and the insulating cover can be further avoided.

[0019] Since the antenna is easily bent at the connection portion between the conductor member and the insulating member, the antenna device preferably includes the housing recess formed between an axial end surface of the conductor member and an axial end surface of the insulating member.

[0020] With such a structure, the protruding insulating portion is provided at a portion where bending is likely to occur, thereby further avoiding contact between the antenna and the insulating cover.

[0021] In the antenna device, it is preferable that the housing recess is formed on an outer peripheral surface of the conductor member.

[0022] With this structure, the protruding insulating portion is arranged away from the insulating component, so that the protruding insulating portion and the insulating component can be prevented from contacting each other in the axial direction, and the temperature effect of the protruding insulating portion on the insulating component can be suppressed. As a result, the temperature difference between the insulating components can be prevented, so that the insulating component can be prevented from being damaged.

[0023] In addition, the plasma processing apparatus of the present invention is characterized by comprising: the antenna; a vacuum container in which the antenna is arranged inside or outside; and a high-frequency power supply for applying a high-frequency current to the antenna.

[0024] According to the plasma processing apparatus having such a structure, since the insulating cover can be prevented from being damaged as described above, the quality of the film thickness and the like can be ensured, and the reliability can be improved.

[0025] Effects of the Invention

[0026] According to the present invention thus constituted, even when the antenna is extended to perform plasma processing, damage to the insulating cover can be prevented. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] [ Figure 1 ] is a longitudinal sectional view schematically showing the structure of the plasma processing device of the present embodiment.

[0028] [ Figure 2 ] is an enlarged cross-sectional view schematically showing the peripheral structure of the antenna device of the embodiment.

[0029] [ Figure 3 ] is an enlarged cross-sectional view schematically showing the peripheral structure of the protruding insulating portion of the embodiment.

[0030] [ Figure 4 ] is a cross-sectional view along line AA in the peripheral structure of the protruding insulating portion of the embodiment.

[0031] [ Figure 5 ] is an enlarged cross-sectional view schematically showing the peripheral structure of the protruding insulating portion of a modified embodiment.

[0032] [ Figure 6 ] is a cross-sectional view along line AA in the peripheral structure of the protruding insulating portion of a modified embodiment.

[0033] [ Figure 7 ] is an enlarged cross-sectional view schematically showing the peripheral structure of the protruding insulating portion of a modified embodiment. DETAILED DESCRIPTION

[0034] Hereinafter, an embodiment of the plasma processing device of the present invention will be described with reference to the accompanying drawings. In addition, for the sake of easy understanding, any of the following figures may be schematically depicted with appropriate omissions or exaggerations. For the same components, the same symbols are marked and the description is appropriately omitted.

[0035] <Device Structure>

[0036] The plasma processing apparatus 100 of the present embodiment uses an inductively coupled plasma P to process a substrate W. Here, the substrate W is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electroluminescence (EL) display, a flexible substrate for a flexible display, etc. In addition, the processing performed on the substrate W is, for example, film formation, etching, ashing, sputtering, etc. performed by a plasma chemical vapor deposition (CVD) method.

[0037] In addition, the plasma processing device 100 is also called a plasma CVD device when film formation is performed by a plasma CVD method, is also called a plasma etching device when etching is performed, is also called a plasma ashing device when ashing is performed, and is also called a plasma sputtering device when sputtering is performed.

[0038] Specifically, if Figure 1 As shown, the plasma processing device 100 includes: a vacuum container 2 that is evacuated and into which a gas G is introduced; a linear antenna 3 that is disposed in the vacuum container 2; an insulating cover 4 that is in a straight tube shape; a protruding insulating portion 5 that includes an insulating material; and a high-frequency power supply 6 that applies a high frequency to the antenna 3 for generating an inductively coupled plasma P in the vacuum container 2. In addition, by applying a high frequency to the antenna 3 from the high-frequency power supply 6, a high-frequency current IR flows in the antenna 3, an induced electric field is generated in the vacuum container 2, and an inductively coupled plasma P is generated. In addition, in the present embodiment, the antenna device 10 is formed by the antenna 3, the insulating cover 4, and the protruding insulating portion 5.

[0039] The vacuum container 2 is, for example, a metal container, and the interior thereof is evacuated by a vacuum exhaust device 7. In the example described above, the vacuum container 2 is electrically grounded.

[0040] For example, gas G is introduced into the vacuum container 2 via a flow rate adjuster (not shown) and a plurality of gas inlet ports 21 formed on the side wall of the vacuum container 2. The gas G may be a gas corresponding to the processing content to be performed on the substrate W. For example, when a film is formed on the substrate W by a plasma CVD method, the gas G is a raw material gas or a gas diluted with a dilution gas (such as H2). To give a more specific example, when the raw material gas is SiH4, a Si film can be formed on the substrate W, when the raw material gas is SiH4+NH3, a SiN film can be formed on the substrate W, when the raw material gas is SiH4+O2, a SiO2 film can be formed on the substrate W, and when the raw material gas is SiF4+N2, a SiN:F film (fluorinated silicon nitride film) can be formed on the substrate W.

[0041] In addition, a substrate holder 8 for holding a substrate W is provided in the vacuum container 2. As in the above example, a bias voltage may be applied to the substrate holder 8 from a bias power supply 9. The bias voltage may be, for example, a negative DC voltage, a negative pulse voltage, etc., but is not limited thereto. By means of such a bias voltage, for example, the energy of positive ions in the plasma P when incident on the substrate W can be controlled, and the degree of crystallization of a film formed on the surface of the substrate W can be controlled. A heater 81 for heating the substrate W may be provided in the substrate holder 8.

[0042] The antenna 3 is disposed above the substrate W in the vacuum chamber 2 along the surface of the substrate W (eg, substantially parallel to the surface of the substrate W). The number of antennas 3 disposed in the vacuum chamber 2 may be one or more.

[0043] The vicinity of the two ends of the antenna 3 penetrates the opposite side walls of the vacuum container 2. Insulating members 11 are respectively provided at the portions where the two ends of the antenna 3 penetrate the outside of the vacuum container 2. The two ends of the antenna 3 penetrate the insulating members 11, and the penetration portions thereof are vacuum-sealed by, for example, a filler 12. The insulating members 11 and the vacuum container 2 are also vacuum-sealed by, for example, a filler 13. In addition, the insulating members 11 are made of, for example, ceramics such as alumina, quartz, or engineering plastics such as polyphenylene sulfide (PPS) and polyether ether ketone (PEEK).

[0044] Furthermore, in the antenna 3, the portion located in the vacuum container 2 is covered by a straight tubular insulating cover 4. Both ends of the insulating cover 4 are supported by insulating members 11. In addition, the insulating cover 4 and the insulating members 11 may not be sealed. The reason is that even if the gas G enters the space in the insulating cover 4, the space is small and the moving distance of the electrons is short, so plasma P is usually not generated in the space. In addition, the material of the insulating cover 4 is, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon, etc.

[0045] By providing the insulating cover 4, the charged particles in the plasma P can be prevented from being incident on the metal tube 31 constituting the antenna 3, thereby preventing the increase in the plasma potential caused by the charged particles (mainly electrons) incident on the metal tube 31, and preventing the metal tube 31 from being sputtered by the charged particles (mainly ions) and causing metal contamination to the plasma P and the substrate W.

[0046] The high frequency power supply 6 is connected to the power supply end 3a as one end of the antenna 3 via the matching circuit 41, and the terminal 3b as the other end is directly grounded. In addition, the power supply end 3a can be connected to the high frequency power supply 6 via a capacitor or a coil, and the terminal 3b can also be grounded via a capacitor or a coil.

[0047] According to the above configuration, the high-frequency current IR can flow from the high-frequency power source 6 to the antenna 3 via the matching circuit 41. The frequency of the high-frequency current IR is, for example, generally 13.56 MHz, but is not limited thereto.

[0048] The antenna 3 is an antenna of a hollow structure having a flow path for the coolant CL to circulate therein. In addition, the coolant CL circulates in the antenna 3 through a circulation flow path 14 provided outside the vacuum container 2. A temperature control mechanism 141 such as a heat exchanger and a circulation mechanism 142 such as a pump are provided in the circulation flow path 14. The temperature control mechanism 141 is used to adjust the coolant CL to a certain temperature, and the circulation mechanism 142 is used to circulate the coolant CL in the circulation flow path 14. As the coolant CL, from the viewpoint of electrical insulation, high-resistance water is preferably used, for example, pure water or water close thereto is preferably used. In addition, a liquid cooling medium other than water, such as a fluorine-based inert liquid, may also be used.

[0049] Specifically, if Figure 2 As shown, the antenna 3 includes: at least two tubular metal conductor parts 31 (hereinafter referred to as "metal tubes 31"); a tubular insulating part 32 (hereinafter referred to as "insulating tube 32"), which is arranged between adjacent metal tubes 31 to insulate these metal tubes 31; and a capacitor 33 as a capacitance element, which is electrically connected in series with the adjacent metal tubes 31.

[0050] In this embodiment, the number of metal tubes 31 is two, and the number of insulating tubes 32 and capacitors 33 is one each. In the following description, one of the metal tubes 31 is referred to as a "first metal tube 31A", and the other metal tube is referred to as a "second metal tube 31B". In addition, the antenna 3 may have a structure having three or more metal tubes 31, in which case the number of insulating tubes 32 and capacitors 33 is one less than the number of metal tubes 31.

[0051] The metal pipe 31 is a straight metal pipe having a linear flow path 31 x formed inside thereof through which the coolant CL flows. The material of the metal pipe 31 is, for example, copper, aluminum, an alloy thereof, stainless steel, or the like.

[0052] In addition, an external thread portion 31a is formed on the outer periphery of at least one end in the longitudinal direction of the metal pipe 31. In order to realize the commonality of parts with the structure connecting multiple metal pipes 31, it is ideal to form external thread portions 31a at both ends in the longitudinal direction of the metal pipe 31 to make it interchangeable.

[0053] The insulating tube 32 is a straight insulating tube having a linear flow path 32x formed therein for the coolant CL to flow. The insulating tube 32 may be made of, for example, alumina, fluororesin, polyethylene (PE), engineering plastics (such as polyphenylene sulfide (PPS), polyetheretherketone (PEEK), etc.).

[0054] Furthermore, an internal thread portion 32a is formed on the inner circumferential surface of the insulating tube 32 to be screwed and connected to the external thread portion 31a of the metal tube 31. In addition, a recessed portion 32b is formed on the inner wall of the insulating tube 32 at the axial center side of each internal thread portion 32a and across the entire circumference, and the recessed portion 32b is used for fitting a pair of electrodes 33A and 33B constituting the capacitor 33. The insulating tube 32 of this embodiment is formed of a single member, but it can also be formed by joining a plurality of members.

[0055] The capacitor 33 is provided inside the insulating tube 32 , specifically, inside a flow path 32 x of the insulating tube 32 through which the coolant CL flows.

[0056] Specifically, the capacitor 33 includes: a first electrode 33A, which is electrically connected to one of the mutually adjacent metal tubes 31 (the first metal tube 31A); and a second electrode 33B, which is electrically connected to the other of the mutually adjacent metal tubes 31 (the second metal tube 31B) and is arranged opposite to the first electrode 33A, and the capacitor 33 is configured such that the coolant CL fills the space between the first electrode 33A and the second electrode 33B. That is, the coolant CL flowing in the space between the first electrode 33A and the second electrode 33B becomes a dielectric constituting the capacitor 33.

[0057] Each electrode 33A, 33B is roughly in the shape of a body of revolution, and a main flow path 33x is formed in the center along its central axis. Specifically, each electrode 33A, 33B has a flange portion 331 that electrically contacts the end of the metal tube 31 on the insulating tube 32 side, and an extension portion 332 that extends from the flange portion 331 to the insulating tube 32 side. Each electrode 33A, 33B may be formed of a single member to form the flange portion 331 and the extension portion 332, or may be formed of different parts and joined together. The material of the electrode 33A, the electrode 33B is, for example, aluminum, copper, or an alloy thereof.

[0058] The flange portion 331 contacts the end portion of the metal pipe 31 on the insulating pipe 32 side over the entire circumference. Specifically, the axial end surface of the flange portion 331 contacts the front end surface of the cylindrical contact portion 313 formed at the end of the metal pipe 31 over the entire circumference.

[0059] The extension portion 332 is cylindrical in shape, and a main flow path 33x is formed therein. The extension portion 332 of the first electrode 33A and the extension portion 332 of the second electrode 33B are coaxially arranged with each other. That is, the extension portion 332 of the second electrode 33B is inserted into the extension portion 332 of the first electrode 33A. Thus, a cylindrical space along the flow path direction is formed between the extension portion 332 of the first electrode 33A and the extension portion 332 of the second electrode 33B.

[0060] Each electrode 33A, 33B thus constructed is fitted into a recess 32b formed on the inner wall of the insulating tube 32. Specifically, the first electrode 33A is fitted into a recess 32b formed on one axial end side of the insulating tube 32, and the second electrode 33B is fitted into a recess 32b formed on the other axial end side of the insulating tube 32. By fitting each electrode 33A, 33B into each recess 32b as described above, the extension 332 of the first electrode 33A and the extension 332 of the second electrode 33B are arranged coaxially with each other. In addition, the end surface of the flange 331 of each electrode 33A, 33B is in contact with the surface of each recess 32b facing the axial outside, so that the insertion dimension of the extension 332 of the second electrode 33B relative to the extension 332 of the first electrode 33A is determined.

[0061] In addition, by fitting the electrodes 33A and 33B into the recesses 32b of the insulating tube 32 and screwing the external threaded portion 31a of the metal tube 31 into the internal threaded portion 32a of the insulating tube 32, the front end surface of the contact portion 313 of the metal tube 31 comes into contact with the flanges 331 of the electrodes 33A and 33B, and the electrodes 33A and 33B are clamped and fixed between the insulating tube 32 and the metal tube 31. In this way, the antenna 3 of the present embodiment has a structure in which the metal tube 31, the insulating tube 32, the first electrode 33A, and the second electrode 33B are coaxially arranged.

[0062] In the above structure, when the coolant CL flows from the first metal pipe 31A, the coolant CL flows toward the second electrode 33B through the main flow path 33x of the first electrode 33A. The coolant CL flowing to the second electrode 33B passes through the main flow path 33x of the second electrode 33B and flows toward the second metal pipe 31B. At this time, the cylindrical space between the extension portion 332 of the first electrode 33A and the extension portion 332 of the second electrode 33B is filled with the coolant CL, and the coolant CL becomes a dielectric to constitute the capacitor 33.

[0063] Furthermore, in this embodiment, the connection between the metal tube 31 and the insulating tube 32 has a sealing structure for vacuum and the coolant CL. The sealing structure is realized by a sealing member 15 such as a packing provided at the base end of the external thread portion 31a, but a pipe tapered thread structure may be used, for example.

[0064] With this structure, the sealing structure between the metal pipe 31 and the insulating pipe 32, the electrical contact between the metal pipe 31 and the electrodes 33A and 33B, and the fastening of the external thread portion 31a and the internal thread portion 32a are performed simultaneously, so the assembly work becomes very simple.

[0065] Furthermore, the antenna device 10 of the present embodiment further includes a protruding insulating portion 5, which is disposed between the two axial ends 3a and 3b of the antenna 3, protrudes toward the inner peripheral surface 4a of the insulating cover 4 more than the outer peripheral surface 3c of the antenna 3, and contains an insulating material. Specifically, the protruding insulating portion 5 is disposed on the outer peripheral surface 3c of the antenna 3 covered by the insulating cover 4, and protrudes from the outer peripheral surface 3c of the antenna 3. More specifically, as Figure 3 and Figure 4 As shown, the insulator 51 constituting the protruding insulating portion 5 is annular, and the outer peripheral surface 51a of the insulator 51 is located closer to the inner peripheral surface 4a of the insulating cover 4 than the outer peripheral surface 3c of the antenna 3. Thus, even if the antenna 3 is bent, the contact between the antenna 3 and the insulating cover 4 is avoided. In addition, the insulating material is a high melting point ceramic such as quartz and alumina, and is preferably a material that is not easily deformed even when subjected to a long-term plasma treatment.

[0066] In addition, a receiving recess 34 for receiving the insulator 51 is formed on the outer peripheral surface 3c of the antenna 3. Specifically, the receiving recess 34 is formed on the outer peripheral surface 3c of the antenna 3 covered by the insulating cover 4, and in the present embodiment, is provided between the axial end surface 311a of the metal tube 31 and the axial end surface 32c of the insulating tube 32.

[0067] In more detail, the metal tube 31 has a large diameter portion 311 and a small diameter portion 312 formed on an axial end surface 311a of the large diameter portion 311 and extending in the axial direction. In addition, the insulating tube 32 has an insertion recess 321 formed on an axial end surface 32c, extending in the axial direction and into which the small diameter portion 312 is inserted. According to the above structure, the receiving recess 34 is formed by the axial end surface 311a of the large diameter portion 311, the outer peripheral surface 312a of the small diameter portion 312, and the axial end surface 32c of the insulating tube 32. That is, the axial end surface 311a of the large diameter portion 311 and the axial end surface 32c of the insulating tube 32 form the facing surface 34a and the facing surface 34b facing the end surface 51c and the end surface 51d of the insulator 51, respectively, and the outer peripheral surface 312a of the small diameter portion 312 forms the bottom surface 34c of the receiving recess 34.

[0068] Furthermore, the insulator 51 is installed in the receiving recess 34. Specifically, the insulator 51 is installed in the metal pipe 31 by moving along the outer peripheral surface 312a of the small diameter portion 312 to the axial end surface 311a of the large diameter portion 311. Then, the insulator 51 is set in the receiving recess 34 by inserting the small diameter portion 312 into the insertion recess 321.

[0069] When the insulator 51 is mounted in the receiving recess 34, the inner peripheral surface 51b of the insulator 51 is in contact with the outer peripheral surface 312a of the small diameter portion 312, a portion of one end surface 51c of the insulator 51 is in contact with the axial end surface 311a of the large diameter portion 311, and a portion of the other end surface 51d is in contact with the axial end surface 32c of the insulating tube 32. Thus, the insulator 51 is fixed in the receiving recess 34 in the axial direction. In addition, the insulator 51 is annular and is provided so as to span the outer peripheral surface 312a of the small diameter portion 312, so that the radial movement of the small diameter portion 312 is restricted by the insulator 51, and the deflection of the antenna 3 is suppressed.

[0070] In addition, in the above state, the radial lengths of the end faces 51c and 51d of the insulator 51 are configured to be longer than the radial lengths of the axial end faces 311a and 32c. Therefore, the end faces 51c and 51d of the insulator 51 protrude relative to the axial end faces 311a and 32c, and the outer peripheral surface 51a of the insulator 51 is located closer to the inner peripheral surface 4a of the insulating cover 4 than the outer peripheral surface 311b of the large diameter portion 311. That is, the protruding insulating portion 5 is configured by the protruding portions of the outer peripheral surface 51a, the end face 51c, and the end face 51d of the insulator 51.

[0071] <Experimental example>

[0072] In the plasma processing device 100 of the present embodiment, a high frequency was applied to the antenna 3 to generate Ar plasma (15 Pa, 3 kW), and the Ar plasma was stably lit for 1000 hours. On the other hand, in the conventional plasma processing device, a high frequency was applied to the antenna to generate Ar plasma (15 Pa, 3 kW), and as a result, a hole was opened in the insulating cover near the joint between the metal tube 31 and the insulating tube 32 after about 400 hours in total, and the capacitor element was damaged.

[0073] <Effects of the present embodiment>

[0074] According to this embodiment, the electric field is not concentrated on the protruding insulating portion 5, so the ions in the plasma do not collide with the insulating cover 4 close to the protruding insulating portion 5, which can prevent the insulating cover 4 from being etched and damaged. In addition, even if the antenna 3 or the insulating cover 4 is bent, the protruding insulating portion 5 can avoid contact between the antenna 3 and the insulating cover 4.

[0075] According to the present embodiment, the antenna 3 is an LC antenna including a conductor member 31, an insulating member 32, and a capacitor 33 as a capacitive element, and therefore the capacitor 33 is electrically connected to a pair of conductor members 31, so that the composite reactance of the antenna 3 can be in the form of subtracting the capacitive reactance from the inductive reactance. As a result, the impedance of the antenna 3 can be reduced, and even when the antenna 3 is extended, the increase in the impedance can be suppressed, and a high-frequency current can flow easily in the antenna 3, and plasma with good uniformity can be generated efficiently.

[0076] According to this embodiment, the protruding insulating portion 5 is provided in the receiving recess 34, so the axial movement of the protruding insulating portion 5 is restricted in the receiving recess 34. Therefore, by providing the receiving recess 34 at a portion where the antenna 3 is easily bent, contact between the antenna 3 and the insulating cover 4 can be avoided.

[0077] In particular, according to the present embodiment, the antenna 3 is an LC antenna, and therefore, when the antenna 3 is extended, it is easy to bend at the connection portion between the metal tube 31 and the insulating tube 32. Here, the receiving recess 34 is provided between the axial end face 311a of the metal tube 31 and the axial end face 32c of the insulating tube 32, and the insulator 51 is received in the receiving recess 34, so that even if the antenna 3 is bent, the protruding insulating portion 5 can further prevent the antenna 3 from contacting the insulating cover 4.

[0078] <Other Modified Embodiments>

[0079] In addition, the present invention is not limited to the above-described embodiments.

[0080] In the above-described embodiment, the antenna 3 is an LC antenna including the conductor member 31 , the insulating member 32 , and the capacitor 33 . However, the antenna 3 is not limited to the LC antenna, and may be another antenna.

[0081] In the above embodiment, the insulator 51 constituting the protruding insulating portion 5 is annular, but the shape of the insulator 51 is not limited thereto. For example, the insulator 51 may be partially annular, may be protruding, or may be other shapes.

[0082] In the embodiment, in the AA cross-sectional view, the outer peripheral surface 51a of the insulator 51 is shaped along the inner peripheral surface 4a of the insulating cover 4, but the present invention is not limited thereto. In the AA cross-sectional view, the outer peripheral surface 51a of the insulator 51 may also be convex, curved, or in other shapes.

[0083] In the above embodiment, the receiving recess 34 is disposed between the axial end surface 311a of the metal tube 31 and the axial end surface 32c of the insulating tube 32, but the position for disposing the receiving recess 34 is not limited thereto. Figure 5 As shown, the receiving recess 34 may also be formed on the outer peripheral surface 311b of the large diameter portion 311 of the metal pipe 31. Specifically, the receiving recess 34 is formed on the outer peripheral surface 311b between the axial end surface 311a and the other end surface of the large diameter portion 311.

[0084] In the case described, Figure 6 As shown, the insulator 51 is in the shape of two divided parts of a ring, and the two insulators 51 are installed in the receiving recess 34 by covering the two insulators 51 in a manner of sandwiching the receiving recess 34. When the insulator 51 is installed in the receiving recess 34, the inner peripheral surface 51b of the insulator 51 is in contact with the outer peripheral surface 311b forming the receiving recess 34, and the end face 51c and the end face 51d of the insulator 51 are in contact with the facing surface 34a and the facing surface 34b of the receiving recess 34. Thus, the protruding insulating portion 5 is arranged in the receiving recess 34 away from the insulating component 32, so that the contact between the protruding insulating portion 5 and the insulating component 32 can be prevented, and the temperature influence of the protruding insulating portion 5 on the insulating component 32 can be suppressed. As a result, the temperature difference between the insulating tubes 32 can be prevented, so that the damage of the insulating tubes 32 can be prevented. In addition, in Figure 6 The number of partially annular insulators 51 is two, but the number may be three or more, or one.

[0085] Alternatively, when the receiving recess 34 is formed on the outer peripheral surface 311b of the large diameter portion 311 of the metal pipe 31, as shown in FIG. Figure 7 As shown, the end faces 51c and 51d of the insulator 51 may be arranged away from the facing faces 34a and 34b of the receiving recess 34. In this case, the protruding insulating portion 5 is arranged away from the conductor member 31 in addition to the insulating member 32, so that the temperature influence of the protruding insulating portion 5 on the conductor member 31 and the insulating member 32 can be suppressed.

[0086] In the above embodiment, the small diameter portion 312 is formed in the conductor tube 31 and the insertion recess 321 is formed in the insulation tube 32 . However, the small diameter portion may be formed in the insulation tube 32 and the insertion recess may be formed in the conductor tube 31 .

[0087] Furthermore, the metal pipe and the insulating pipe are in a tubular shape having one internal flow path, but may have two or more internal flow paths, or may have a branched internal flow path. In addition, the metal pipe and the insulating pipe may be solid.

[0088] In the electrode of the above embodiment, the extension portion is cylindrical, but may be in other rectangular cylindrical shapes, or may be in a flat plate shape or a bent or curved plate shape.

[0089] In addition, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

[0090] Industrial Applicability

[0091] According to the present invention, even when the antenna is extended to perform plasma processing, damage to the insulating cover can be prevented.

[0092] Description of Figure Numbers

[0093] 100: Plasma treatment device

[0094] 10: Antenna device

[0095] W: substrate

[0096] P: Inductively coupled plasma

[0097] 2: Vacuum container

[0098] 3: Antenna

[0099] 31: Metal tube (conductor part)

[0100] 32: Insulation tube (insulation component)

[0101] 33: Capacitor

[0102] 33A: First electrode

[0103] 33B: Second electrode

[0104] 34: Containment recess

[0105] 4: Insulation cover

[0106] 5: Protruding insulation part

[0107] 51: Insulator

[0108] CL: Coolant (liquid dielectric)

Claims

1. An antenna device for causing a high-frequency current to flow to generate plasma, the antenna device comprising: Antennas that are in a straight line; An insulating cover in a straight tube shape, covering the outer circumference of the antenna; as well as The protruding insulating portion is provided between both axial end portions of the antenna, protrudes toward the inner peripheral surface side of the insulating cover rather than the outer peripheral surface of the antenna, and includes an insulating material.

2. The antenna device according to claim 1, wherein: The antenna also includes: at least two conductive parts; an insulating member disposed between the adjacent conductor members to insulate the conductor members; and The capacitor element is electrically connected in series with the conductor components adjacent to each other.

3. The antenna device according to claim 2, wherein: An accommodation recess is formed on the outer peripheral surface of the antenna, and the accommodation recess accommodates an insulator constituting the protruding insulating portion.

4. The antenna device according to claim 3, wherein: The receiving recess is formed between an axial end surface of the conductor component and an axial end surface of the insulating component.

5. The antenna device according to claim 3, wherein: The receiving recess is formed on the outer peripheral surface of the conductor component.

6. A plasma processing device, comprising: The antenna device according to any one of claims 1 to 5; A vacuum container, with the antenna disposed inside or outside; as well as A high-frequency power supply applies a high-frequency current to the antenna.

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